Substrate polishing apparatus including cleaning module

Abstract

In one embodiment, the substrate polishing device may include a first polishing pad configured to polish a substrate first, a second polishing pad configured to polish the substrate polished at the first polishing pad second, a transfer module configured to transfer the substrate between the first polishing pad and the second polishing pad, and a cleaning module configured to perform cleaning on the substrate during the process of transferring the substrate polished at the first polishing pad to the second polishing pad.

Description

Technology Field

[0001] The following embodiment relates to a substrate polishing device including a cleaning module. Background Technology

[0002] The manufacturing of semiconductor devices requires chemical mechanical polishing (CMP) operations, including polishing, buffing, and cleaning. Semiconductor devices are in the form of a multilayer structure, and transistor devices with diffusion regions are formed on the substrate layer. On the substrate layer, connecting metal lines are patterned and electrically connected to the transistor devices forming the functional components. As is known, the patterned conductive layer is insulated from other conductive layers by an insulating material such as silicon dioxide. As more metal layers and associated insulating layers are formed, the need to flatten the insulating material increases. If flattening is not performed, the fabrication of additional metal layers becomes substantially more difficult due to significant variations in surface morphology. Furthermore, since the metal line pattern is formed with an insulating material, metal CMP operations are performed to remove excess metal.

[0003] In semiconductor manufacturing processes, a multi-stage polishing process is applied to improve the flatness and surface quality of the substrate. Meanwhile, after the first polishing, slurry or other foreign substances remaining on the substrate can cause quality degradation or defects to occur during the second polishing. Accordingly, there is a growing need for a technology to clean the substrate during the transfer process between polishing pads.

[0004] The aforementioned background technology is one that the inventor possessed or acquired in the process of deriving the contents of the disclosure of the present application, and it cannot be considered as prior art disclosed to the general public prior to the filing of this application. The problem to be solved

[0005] The objective of one embodiment is to provide a substrate polishing device capable of removing foreign substances remaining on the substrate during the transfer process before the substrate, which has been polished first at a first polishing pad, is polished second at a second polishing pad. means of solving the problem

[0006] In one embodiment, the substrate polishing device may include a first polishing pad configured to polish a substrate first, a second polishing pad configured to polish the substrate polished at the first polishing pad second, a transfer module configured to transfer the substrate between the first polishing pad and the second polishing pad, and a cleaning module configured to perform cleaning on the substrate during the process of transferring the substrate polished at the first polishing pad to the second polishing pad.

[0007] In one embodiment, the cleaning module may be positioned on a path where the substrate polished at the first polishing pad is transferred to the second polishing pad.

[0008] In one embodiment, the cleaning module may be configured to clean the substrate in a manner according to at least one of wet cleaning and dry cleaning.

[0009] In one embodiment, the cleaning module can perform cleaning in real time while the substrate polished at the first polishing pad is transferred to the second polishing pad.

[0010] In one embodiment, the cleaning module may be coupled to the transfer module so as to move together with the transfer module.

[0011] In one embodiment, the cleaning module may include at least one of an ultrasonic vibration generator, a plasma generator, a brush, a fluid injection nozzle, and a vacuum suction nozzle.

[0012] In one embodiment, a contamination detection module configured to detect the contamination level of the substrate during the process in which the substrate polished at the first polishing pad is transferred to the second polishing pad may be further included.

[0013] In one embodiment, the intensity of the cleaning module cleaning the substrate can be adjusted according to the contamination level detected by the contamination detection module.

[0014] In one embodiment, during the process in which the substrate polished at the first polishing pad is transferred to the second polishing pad, after the substrate is cleaned by the cleaning module, the transfer module may rotate the substrate so that the substrate is dried.

[0015] In one embodiment, a first slurry is supplied in a first polishing process, and a second slurry different from the first slurry is supplied in a second polishing process.

[0016] In one embodiment, the cleaning module may be configured to remove the first slurry attached to the substrate during the process in which the substrate polished at the first polishing pad is transferred to the second polishing pad.

[0017] In one embodiment, the cleaning may be configured to be performed until all of the first slurry is removed. Effects of the invention

[0018] According to a substrate polishing device of one embodiment, by cleaning the substrate during the transfer process before the substrate, which has been polished first at the first polishing pad, is polished second at the second polishing pad, the quality of the second polishing can be improved and productivity can be improved.

[0019] The effects of the substrate polishing device according to one embodiment are not limited to those mentioned above, and other unmentioned effects will be clearly understood by a person skilled in the art from the description below. Brief explanation of the drawing

[0020] FIG. 1 is a schematic plan view of a substrate process system according to one embodiment. FIG. 2 is a schematic plan view of a first grinding line according to one embodiment. FIG. 3 is a schematic side view of the first rotating part and the first loading part in the first grinding line according to one embodiment. FIG. 4 is a schematic plan view of a substrate polishing device according to one embodiment. FIG. 5 is a schematic plan view of a substrate polishing device according to one embodiment. Specific details for implementing the invention

[0021] Hereinafter, embodiments are described in detail with reference to the attached drawings. However, various modifications may be made to the embodiments, and thus the scope of the patent application is not limited or restricted by these embodiments. It should be understood that all modifications, equivalents, and substitutions to the embodiments are included within the scope of the rights.

[0022] The terms used in the embodiments are for illustrative purposes only and should not be interpreted as intended to be limiting. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as "comprising" or "having" are intended to indicate the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0023] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which the embodiments pertain. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this application.

[0025] In addition, when describing with reference to the attached drawings, identical components are assigned the same reference numeral regardless of drawing symbols, and redundant descriptions thereof are omitted. In describing the embodiments, if it is determined that a detailed description of related prior art could unnecessarily obscure the essence of the embodiments, such detailed description is omitted.

[0026] In addition, terms such as first, second, A, B, (a), (b), etc., may be used when describing the components of the embodiments. These terms are intended only to distinguish the components from other components, and the nature, order, or sequence of the components is not limited by the terms. Where it is stated that a component is "connected," "combined," or "connected" to another component, it should be understood that the component may be directly connected or connected to the other component, but that another component may also be "connected," "combined," or "connected" between each component.

[0027] Components included in any one embodiment and components having common functions shall be described using the same names in other embodiments. Unless otherwise stated, the description in any one embodiment may also apply to other embodiments, and specific descriptions shall be omitted to the extent of overlap.

[0029] FIG. 1 is a schematic plan view of a substrate process system according to one embodiment.

[0030] Referring to FIG. 1, a substrate process system (1) according to one embodiment may be a system for processing the surface of a substrate. For example, the substrate process system (1) may perform a polishing process and a cleaning process on the substrate. The substrate on which the process is performed through the substrate process system (1) may be a silicon wafer for manufacturing a semiconductor device. However, the type of substrate is not limited thereto. For example, the substrate may include glass for an LCD (liquid crystal display) or PDP (plasma display device, FPD).

[0031] A substrate process system (1) according to one embodiment may include a front end module (11), a process line (12), a first stage (13), a first transfer robot (14), a second stage (15), a second transfer robot (16), and a third transfer robot (17).

[0032] In one embodiment, the front end module (11) may be located on one side of the substrate process system (1) (e.g., the side in the +x direction). The front end module (11) may be positioned in a first direction (L1). For example, the front end module (11) may be positioned to have a longitudinal direction in the y-axis direction with respect to FIG. 1. For example, the front end module (11) may be an equipment front end module (EFEM). A cassette or a Front Opening Unified Pod (FOUP) may be placed in the front end module (11). A substrate to be processed and / or a processed wafer may be stored in the cassette or FOUP. A first transfer robot (14) may be placed in the front end module (11). The first transfer robot (14) will be described later.

[0033] In one embodiment, the process line (12) may be a line on which a process is performed on a substrate. The process line (12) may perform a polishing process and a cleaning process on the substrate. The process line (12) may be provided with at least one or more. For example, the process line (12) may include a first process line (12a) and a second process line (12b). The first process line (12a) and the second process line (12b) may be arranged in parallel with each other. For example, the first process line (12a) may be arranged in a second direction (L2) perpendicular to a first direction (L1). The second process line (12b) may be arranged in a third direction (L3) perpendicular to the first direction (L1) and parallel to the second direction (L2). For example, the first process line (12a) may be arranged to have a longitudinal direction parallel to the x-axis, and the second process line (12b) may also be arranged to have a longitudinal direction parallel to the x-axis so as to be parallel to the first process line (12a). That is, the first process line (12a) and the second process line (12b) may be arranged parallel to each other. The first process line (12a) and the second process line (12b) may be spaced apart from each other so that a space is formed between them. For example, the first stage (13), the second transfer robot (16), and the third transfer robot (17), which will be described later, may be arranged between the first process line (12a) and the second process line (12b).

[0034] In one embodiment, the first process line (12a) may include a first polishing line (121a) and a first cleaning line (122a). The second process line (12b) may include a second polishing line (121b) and a second cleaning line (122b).

[0035] In one embodiment, the first polishing line (121a) and the second polishing line (121b) can perform a polishing process on the substrate. For example, the first polishing line (121a) and the second polishing line (121b) can perform a Chemical Mechanical Planalization (CMP) process to polish the surface of the substrate. The first polishing line (121a) and the second polishing line (121b) may be located opposite the front end module (11). For example, the first polishing line (121a) and the second polishing line (121b) may be located on the other side (e.g., the -x direction side) of the substrate process system (1).

[0036] In one embodiment, the first cleaning line (122a) and the second cleaning line (122b) can perform a cleaning process on a substrate. The cleaning process may be a concept that includes a process of cleaning the substrate and a process of drying it. For example, the first cleaning line (122a) and the second cleaning line (122b) can perform a cleaning process on a substrate that has been polished and a drying process on a substrate that has been cleaned. The first cleaning line (122a) and the second cleaning line (122b) may each be arranged to have a longitudinal direction parallel to the x-axis. For example, the first cleaning line (122a) and the second cleaning line (122b) may be spaced apart from each other so that a space is formed between them. The first cleaning line (122a) and the second cleaning line (122b) can each be positioned between the first polishing line (121a) and the front end module (11) and between the second polishing line (121b) and the front end module (11).

[0037] In one embodiment, the first stage (13) may be located between the first process line (12a) and the second process line (12b). For example, the first stage (13) may be located between the first cleaning line (122a) and the second cleaning line (122b). For example, the first stage (13) may be located between the front end module (11) and the first polishing line (121a) and the second polishing line (121b). The first stage (13) may be located adjacent to the front end module (11). A substrate to be processed (e.g., a substrate before polishing) may be placed on the first stage (13).

[0038] In one embodiment, the first transfer robot (14) may be movable along the longitudinal direction (e.g., y-axis direction) of the front end module (11). For example, the first transfer robot (14) may be movable along a rail (141) arranged in the y-axis direction. For example, the first transfer robot (14) may be movable between a first receiving position (RP1) and a second receiving position (RP2). The first receiving position (RP1) may be a position adjacent to the first cleaning line (122a). The second receiving position (RP2) may be a position adjacent to the second cleaning line (122b). For example, the first receiving position (RP1) may be located at one end of the rail (141) (e.g., the +y direction end), and the second receiving position (RP2) may be located at the other end of the rail (141) (e.g., the -y direction end). The first transfer robot (14) can transfer a cleaned substrate from either the first cleaning line (122a) or the second cleaning line (122b) to the front end module (11). For example, the first transfer robot (14) can transfer a cleaned substrate from the second chamber section of either the first cleaning line (122a) or the second cleaning line (122b) to the front end module (11). For example, the first transfer robot (14) can receive a cleaned substrate from the first cleaning line (122a) at the first receiving position (RP1). The first transfer robot (14) can receive a cleaned substrate from the second cleaning line (122b) at the second receiving position (RP2). The first transfer robot (14) can store the received cleaned substrate in a cassette or FOUP.

[0039] In one embodiment, a supply position (SP) may be located between the first receiving position (RP1) and the second receiving position (RP2). For example, the supply position (SP) may be located at an intermediate point between the first receiving position (RP1) and the second receiving position (RP2). The first transfer robot (14) may transfer a substrate from the front end module (11) to the first stage (13) at the supply position (SP). For example, the first transfer robot (14) may transfer a substrate to be processed from the cassette or FOUP of the front end module (11) to the first stage (13) at the supply position (SP). The substrate to be processed may be placed on the first stage (13) and wait for the next transfer.

[0040] In one embodiment, the second stage (15) may be located between the first process line (12a) and the second process line (12b). For example, the second stage (15) may be located between the first polishing line (121a) and the second polishing line (121b). The second stage (15) may be located adjacent to the second transfer robot (16) described later. A substrate before polishing or a substrate after polishing may be placed on the second stage (15). For example, the substrate may be transferred from the first polishing line (121a) or the second polishing line (121b) to the first cleaning line (122a) or the second cleaning line (122b) via the second stage (15), or transferred from the first cleaning line (122a) or the second cleaning line (122b) to the first polishing line (121a) or the second polishing line (121b). For example, such transfer can be performed by at least the second transfer robot (16) and / or the third transfer robot (17) described later.

[0041] In one embodiment, the second transfer robot (16) can transfer a substrate between at least two locations among the first cleaning line (122a), the second cleaning line (122b), the first stage (13), and the second stage (15). The second transfer robot (16) may be located between the first process line (12a) and the second process line (12b). For example, the second transfer robot (16) may be located between the first cleaning line (122a) and the second cleaning line (122b). For example, the second transfer robot (16) may be located between the front end module (11) and the first polishing line (121a) and the second polishing line (121b). For example, the second transfer robot (16) may be located to the left (e.g., in the -x direction) of the first stage (13) with respect to FIG. 1. The second transfer robot (16) may be configured to be rotatable and may include an extendable arm. The second transfer robot (16) can be freely accessed in the circumferential direction.

[0042] In one embodiment, the third transfer robot (17) can transfer a substrate between at least two locations among the second stage (15), the first polishing line (121a), and the second polishing line (121b). The third transfer robot (17) may be located between the first process line (12a) and the second process line (12b). For example, the third transfer robot (17) may be located between the first polishing line (121a) and the second polishing line (121b). The third transfer robot (17) may be located adjacent to the second stage (15). For example, the third transfer robot (17) may be located to the left (e.g., in the -x direction) of the second stage (15) with respect to FIG. 1. The third transfer robot (17) may be configured to be rotatable and may include an extendable arm. The third transfer robot (17) may be freely accessible in the circumferential direction.

[0043] In one embodiment, when the first transfer robot (14) transfers a substrate to be processed (e.g., a substrate before polishing) to the first stage (13), the second transfer robot (16) can transfer the substrate before polishing placed on the first stage (13) to the second stage (15). When the substrate before polishing is placed on the second stage (15), the third transfer robot (17) can transfer the substrate before polishing from the second stage (15) to either the first polishing line (121a) or the second polishing line (121b). For example, the third transfer robot (17) can transfer the substrate before polishing placed on the second stage (15) to the first transfer position of the first polishing line (121a) (e.g., the first transfer position (TP1) of FIG. 2) or the first transfer position (TP1) of the second polishing line (121b).

[0044] In one embodiment, the third transfer robot (17) can transfer a polished substrate from either the first polishing line (121a) or the second polishing line (121b) to the second stage (15). Once the polished substrate is placed on the second stage (15), the second transfer robot (16) can transfer the polished substrate from the second stage (15) to either the first cleaning line (122a) or the second cleaning line (122b). With this configuration, even if one of the cleaning lines, either the first cleaning line (122a) or the second cleaning line (122b), fails, the polished substrate can be transferred to another cleaning line that is not broken, thereby improving process freedom.

[0046] FIG. 2 is a schematic plan view of a first polishing line according to one embodiment. FIG. 3 is a schematic side view of a first rotating part and a first loading part in a first polishing line according to one embodiment.

[0047] Referring to FIGS. 2 and 3, in one embodiment, the first polishing line (121a) may include a first rotating part (1211), a second rotating part (1212), a third rotating part (1213), a first loading part (1214) and a second loading part (1215), a first polishing pad (1216) and a second polishing pad (1217).

[0048] In one embodiment, the first rotating part (1211) rotates around a first axis (A1) perpendicular to the ground and can transport a substrate along a circular first transport track (TO1). The first rotating part (1211) can receive a substrate in a pre-polishing state through a third transport robot (e.g., the third transport robot (17) of FIG. 1). The first rotating part (1211) can transfer the received substrate to the second rotating part (1212) or the third rotating part (1213). Additionally, the first rotating part (1211) can receive a substrate in a post-polishing state from the second rotating part (1212) or the third rotating part (1213) and transfer it to a post-polishing process (e.g., a cleaning process) through the third transport robot (17). The first rotating part (1211) can transport a substrate along a circular track. The first rotating part (1211) can transport a plurality of substrates simultaneously. For example, the transport of a substrate in a pre-polishing state and the transport of a substrate in a post-polishing state can be performed simultaneously.

[0049] In one embodiment, the first rotating part (1211) may rotate around a first axis (A1) perpendicular to the ground. The first rotating part (1211) may rotate in one direction or in both directions. The first rotating part (1211) may include a third stage (12111).

[0050] In one embodiment, the third stage (12111) is connected to the first rotating part (1211) and can rotate integrally with the first rotating part (1211). The third stage (12111) can support the lower surface of the substrate. The third stage (12111) can rotate around the first axis (A1) to form a first transfer track (TO1) according to the rotation of the first rotating part (1211). The first transfer track (TO1) can be formed in a circular shape. By rotating the third stage (12111) around the first axis (A1) with the substrate seated thereon, the substrate can be transferred to a position on the first transfer track (T01) (e.g., a first transfer position (TP1), a second transfer position (TP2), or a third transfer position (TP3)).

[0051] In one embodiment, at least one third stage (12111) may be provided. For example, a plurality of third stages (12111) may be provided. For example, three third stages (12111) may be provided. A plurality of third stages (12111) may be spaced apart at specified intervals around the first axis (A1). For example, a plurality of third stages (12111) may be spaced apart at equal angles around the first axis (A1). Meanwhile, the number of third stages (12111) shown in FIGS. 1 and 2 is exemplary and is not limited thereto. Specific details regarding the substrate transfer of the third stage (12111) will be described later.

[0052] In one embodiment, the second rotating part (1212) rotates around a second axis (A2) perpendicular to the ground and can transport a substrate along a circular second transport track (TO2). The second rotating part (1212) may be rotatable in one direction or in both directions. The second rotating part (1212) may include a first carrier head (12121).

[0053] In one embodiment, the second rotating part (1212) supports the first carrier head (12121) from above and can move the first carrier head (12121) along the second transport track (TO2) around the second axis (A2). A substrate can be transported by the second rotating part (1212) while held by the first carrier head (12121). The first carrier head (12121) can hold the substrate by adsorption through a membrane (not shown). The transfer of the substrate between the third stage (12111) and the first carrier head (12121) can be performed by the first loading part (1214).

[0054] In one embodiment, the first carrier head (12121) can perform a polishing process by contacting and frictionally rubbing the first polishing pad (1216) with the polishing surface of the substrate. The first carrier head (12121) and the first polishing pad (1216) can polish the substrate through at least relative rotational movement. For example, the first carrier head (12121) may be capable of rotation and / or translational movement (oscillation) for polishing the substrate. Meanwhile, the first carrier head (12121) may be capable of vertical movement for loading / unloading the substrate or polishing the substrate.

[0055] In one embodiment, a plurality of first carrier heads (12121) may be provided. For example, two first carrier heads (12121) may be provided. When a plurality of first carrier heads (12121) are connected to a second rotating part (1212), the plurality of first carrier heads (12121) may be spaced apart at specified intervals around the second axis (A2). For example, the plurality of first carrier heads (12121) may be spaced apart at equal angles around the second axis (A2). However, this is exemplary, and the number of first carrier heads (12121) is not limited thereto.

[0056] In one embodiment, the first loading unit (1214) can load a substrate in a pre-polishing state from the third stage (12111) to the first carrier head (12121). The first loading unit (1214) can unload a substrate in a post-polishing state from the first carrier head (12121) to the third stage (12111). The first loading unit (1214) can load or unload the substrate through a vertical lifting operation. During the process of the first loading unit (1214) loading or unloading the substrate, the first rotating unit (1211) (e.g., the third stage (12111)) may be capable of vertical lifting operation. Meanwhile, the first loading unit (1214) may be formed integrally with the first rotating unit (1211). That is, the first rotating part (1211) (e.g., the third stage (12111)) may load or unload the substrate onto the first carrier head (12121) on its own without a separate loading part through vertical lifting operation.

[0057] In one embodiment, the third rotating part (1213) rotates around a third axis (A3) perpendicular to the ground and can transport a substrate along a circular third transport track (TO3). The third rotating part (1213) may be rotatable in one direction or in both directions. The third rotating part (1213) may include a second carrier head (12131).

[0058] In one embodiment, the third rotating part (1213) supports the second carrier head (12131) from above and can move the second carrier head (12131) along the second transport track (TO2) around the third axis (A3). A substrate can be transported by the third rotating part (1213) while held by the second carrier head (12131). The second carrier head (12131) can hold the substrate by adsorption through a membrane (not shown). The transfer of the substrate between the third stage (12111) and the second carrier head (12131) can be performed by the second loading part (1215).

[0059] In one embodiment, the second carrier head (12131) can perform a polishing process by contacting and frictionally rubbing the second polishing pad (1217) with the polishing surface of the substrate. The second carrier head (12131) and the second polishing pad (1217) can polish the substrate through at least relative rotational movement. For example, the second carrier head (12131) may be capable of rotation and / or translational movement (oscillation) for polishing the substrate. Meanwhile, the second carrier head (12131) may be capable of vertical movement for loading / unloading the substrate or polishing the substrate.

[0060] In one embodiment, a plurality of second carrier heads (12131) may be provided. For example, two second carrier heads (12131) may be provided. When a plurality of second carrier heads (12131) are connected to a third rotating part (1213), the plurality of second carrier heads (12131) may be spaced apart at specified intervals around the third axis (A3). For example, the plurality of second carrier heads (12131) may be spaced apart at equal angles around the third axis (A3). However, this is exemplary, and the number of second carrier heads (12131) is not limited thereto.

[0061] In one embodiment, the second loading unit (1215) can load a substrate in a pre-polishing state from the third stage (12111) to the second carrier head (12131). The second loading unit (1215) can unload a substrate in a post-polishing state from the second carrier head (12131) to the third stage (12111). The second loading unit (1215) can load or unload the substrate through a vertical lifting operation. During the process of the second loading unit (1215) loading or unloading the substrate, the first rotating unit (1211) (e.g., the third stage (12111)) may be capable of vertical lifting operation. Meanwhile, the second loading unit (1215) may be formed integrally with the first rotating unit (1211). That is, the first rotating part (1211) (e.g., the third stage (12111)) may load or unload the substrate onto the second carrier head (12131) on its own without a separate loading part through vertical lifting operation.

[0063] Hereinafter, with reference to FIGS. 1 to 3, the first transfer track (TO1) of the first rotating part (1211) will be described in detail.

[0064] In one embodiment, first, the second transfer robot (16) can transfer the substrate before polishing from the first stage (13) to the second stage (15). The third transfer robot (17) can transfer the substrate before polishing located at the second stage (15) to the third stage (12111) located at the first transfer position (TP1). That is, the first rotating part (1211) can receive the substrate from the third transfer robot (17) at the first transfer position (TP1) on the first transfer track (TO1). The transferred substrate may be in a state of being placed on the third stage (12111) located at the first transfer position (TP1). Additionally, the first rotating part (1211) can transfer the substrate after polishing from the first transfer position (TP1) to the second stage (15) via the third transfer robot (17). For example, the third transfer robot (17) can transfer the polished substrate from the third stage (12111) located at the first transfer position (TP1) of the first rotating part (1211) to the second stage (15). When the polished substrate is transferred to the second stage (15), the second transfer robot (16) can transfer the polished substrate from the second stage (15) to the next process (e.g., a cleaning process). For example, the second transfer robot (16) can transfer the polished substrate from the second stage (15) to the cleaning process (the first cleaning line (1212a) or the second cleaning line (1212b)).

[0065] In one embodiment, the first transfer track (TO1) and the second transfer track (TO2) may overlap at the second transfer position (TP2). At the second transfer position (TP2), the substrate may be moved from the first rotating part (1211) to the second rotating part (1212). For example, the first rotating part (1211) may transfer (load) the substrate in a pre-polishing state from the second transfer position (TP2) to the second rotating part (1212). At the second transfer position (TP2), the substrate may be moved from the second rotating part (1212) to the first rotating part (1211). For example, the second rotating part (1212) may transfer (unload) the substrate in a post-polishing state from the second transfer position (TP2) to the first rotating part (1211). The transfer of a substrate between the first rotating part (1211) and the second rotating part (1212) at the second transfer position (TP2) can be performed by the first loading part (1214). To this end, the first loading part (1214) may be positioned at the second transfer position (TP2). The first loading part (1214) can load a substrate in a pre-polishing state from the third stage (12111) located at the second transfer position (TP2) to the first carrier head (12121) located at the second transfer position (TP2). The first loading part (1214) can unload a substrate in a post-polishing state from the first carrier head (12121) located at the second transfer position (TP2) to the third stage (12111) located at the second transfer position (TP2).

[0066] In one embodiment, the third stage (12111) of the first rotating part (1211) may be positioned sequentially at the first transfer position (TP1), the second transfer position (TP2), and the third transfer position (TP3) while rotating along the first transfer track (TO1). For example, when one third stage (12111) is positioned at the first transfer position (TP1), another third stage (12111) may be positioned at the second transfer position (TP2), and yet another third stage (12111) may be positioned at the third transfer position (TP3). Depending on the rotation of the first rotating part (1211), when one third stage (12111) moves from the first transfer position (TP1) to the second transfer position (TP2), another third stage (12111) moves from the second transfer position (TP2) to the third transfer position (TP3), and yet another third stage (12111) can move from the third transfer position (TP3) to the first transfer position (TP1). That is, the first rotating part (1211) can transfer the first substrate from the first transfer position (TP1) to the second transfer position (TP2) at the same time transferring the second substrate from the second transfer position (TP2) to the third transfer position (TP3) at the same time transferring the third substrate from the third transfer position (TP3) to the first transfer position (TP1). Meanwhile, this is exemplary, and the first rotating part (1211) may rotate in the opposite direction to the above description, and the third stage (12111) may be transferred directly from the first transfer position (TP1) through the second transfer position (TP2) to the third transfer position (TP3).

[0068] Hereinafter, with reference to FIGS. 2 and FIGS. 3, the second transfer track (TO2) of the second rotating part (1212) will be described in detail.

[0069] In one embodiment, the first carrier head (12121) of the second rotating part (1212) can receive (load) a substrate in a pre-polishing state from the first rotating part (1211) at the second transfer position (TP2). Once the loading of the substrate is complete, the first carrier head (12121) can move to the first polishing position (PP1) by the rotation of the second rotating part (1212). The first polishing position (PP1) may be a position where the second transfer trajectory (TO2) overlaps with the first polishing pad (1216). That is, at least a portion of the first polishing pad (1216) may overlap with the first polishing position (PP1). Polishing of the substrate may be performed at the first polishing position (PP1). That is, the first carrier head (12121) may perform polishing of the substrate in a pre-polishing state at the first polishing position (PP1). When the polishing of the substrate is completed, the first carrier head (12121) can be moved back to the second transfer position (TP2) by the rotation of the second rotating part (1212). The first carrier head (12121) can transfer (unload) the substrate in its polished state from the second transfer position (TP2) to the first rotating part (1211).

[0070] In one embodiment, while one substrate is being polished at a first polishing position (PP1), another substrate at a second transfer position (TP2) may be moved (loaded) from the first rotating part (1211) to the second rotating part (1212) or moved (unloaded) from the second rotating part (1212) to the first rotating part (1211). That is, while polishing of one substrate is being performed at a first carrier head (12121), another substrate may be loaded or unloaded at a second first carrier head (12121).

[0071] In one embodiment, the first carrier head (12121) of the second rotating part (1212) may alternately be positioned at the second transfer position (TP2) and the first polishing position (PP1) while rotating along the second transfer track (TO2). For example, when one first carrier head (12121) is positioned at the second transfer position (TP2), the other first carrier head (12121) may be positioned at the first polishing position (PP1). As the first carrier head (12121) moves from the second transfer position (TP2) to the first polishing position (PP1) according to the rotation of the second rotating part (1212), the other first carrier head (12121) may move from the first polishing position (PP1) to the second transfer position (TP2). That is, the second rotating part (1212) can transfer one substrate from the first polishing position (PP1) to the second transfer position (TP2) and at the same time transfer another substrate from the second transfer position (TP2) to the first polishing position (PP1).

[0073] Hereinafter, with reference to FIGS. 2 and FIGS. 3, the third transfer track (TO3) of the third rotating part (1213) will be described in detail.

[0074] In one embodiment, the second carrier head (12131) of the third rotating part (1213) can receive (load) a substrate in a pre-polishing state from the first rotating part (1211) at the third transfer position (TP3). Once the loading of the substrate is complete, the second carrier head (12131) can move to the second polishing position (PP2) by the rotation of the third rotating part (1213). The second polishing position (PP2) may be a position where the third transfer trajectory (TO3) overlaps with the second polishing pad (1217). That is, at least a portion of the second polishing pad (1217) may overlap with the second polishing position (PP2). Polishing of the substrate may be performed at the second polishing position (PP2). That is, the second carrier head (12131) may perform polishing of the substrate in a pre-polishing state at the second polishing position (PP2). When the polishing of the substrate is completed, the second carrier head (12131) can be moved back to the third transfer position (TP3) by the rotation of the third rotating part (1213). The second carrier head (12131) can transfer (unload) the substrate in its polished state from the third transfer position (TP3) to the first rotating part (1211).

[0075] In one embodiment, while one substrate is being polished at the second polishing position (PP2), another substrate at the third transfer position (TP3) may be moved (loaded) from the first rotating part (1211) to the third rotating part (1213) or moved (unloaded) from the third rotating part (1213) to the first rotating part (1211). That is, while polishing of one substrate is being performed at the first second carrier head (12131), another substrate may be loaded or unloaded at the other second carrier head (12131).

[0076] In one embodiment, the second carrier head (12131) of the third rotating part (1213) may alternately be positioned at the third transfer position (TP3) and the second polishing position (PP2) while rotating along the third transfer track (TO3). For example, when one second carrier head (12131) is positioned at the third transfer position (TP3), the other second carrier head (12131) may be positioned at the second polishing position (PP2). As the third rotating part (1213) rotates, if the first second carrier head (12131) moves from the third transfer position (TP3) to the second polishing position (PP2), the other second carrier head (12131) may move from the second polishing position (PP2) to the third transfer position (TP3). That is, the third rotating part (1213) can transfer one substrate from the second polishing position (PP2) to the third transfer position (TP3) and at the same time transfer another substrate from the third transfer position (TP3) to the second polishing position (PP2).

[0077] In one embodiment, primary polishing may be performed on the first polishing pad (1216), and secondary polishing may be performed on the second polishing pad (1217). For example, either the first polishing pad (1216) or the second polishing pad (1217) may be a pad for buffing. Meanwhile, in one embodiment, after polishing is performed on either the first polishing pad (1216) or the second polishing pad (1217), it may not be transferred to another polishing pad but may be transferred to the second stage (15) and immediately transferred to the cleaning process.

[0079] FIG. 4 is a schematic plan view of a substrate polishing device according to one embodiment.

[0080] Referring to FIG. 4, a substrate polishing device (2) according to one embodiment may be a device for performing a polishing process on a substrate. The substrate polishing device (2) may include a first polishing pad (1216), a second polishing pad (1217), a transfer module (21), a cleaning module (22), and a contamination detection module (not shown).

[0081] In one embodiment, the first polishing pad (1216) may be configured to polish the substrate in a first step. The second polishing pad (1217) may be configured to polish the substrate polished by the first polishing pad (1216) in a second step. Here, the expressions "first" and "second" are intended to indicate a temporal sequence, and the first polishing does not mean the initial polishing. For example, it may be understood that the first polishing pad (1216) polishes the substrate in a second step, and the second polishing pad (1217) polishes the substrate in a third step. Meanwhile, to avoid excessive repetition, the description of the first polishing pad (1216) and the second polishing pad (1217) shall be based on the description provided in FIGS. 1 to 3.

[0082] In one embodiment, the transfer module (21) may be configured to transfer a substrate between a first polishing pad (1216) and a second polishing pad (1217). The transfer module (21) may be understood as a concept that includes all configurations for transferring a substrate between the first polishing pad (1216) and the second polishing pad (1217). For example, the transfer module (21) may include a rotary transfer unit for transferring a substrate along a circular track, a translational transfer unit for transferring a substrate along a linear track, a lifting transfer unit for transferring a substrate in a vertical direction, a loading unit for loading / unloading a substrate to a carrier head, a robot arm having multiple joints, and a combination thereof. For example, the transfer module (21) may include a first rotary unit (1211), a second rotary unit (1212), a third rotary unit (1213), a first loading unit (1214), and a second loading unit (1215). Meanwhile, to avoid excessive repetition, the details regarding the first rotating part (1211), the second rotating part (1212), the third rotating part (1213), the first loading part (1214), and the second loading part (1215) shall be in accordance with the details described in FIGS. 1 to 3. However, this is exemplary, and the detailed configuration of the transfer module (21) is not limited thereto.

[0083] In one embodiment, the cleaning module (22) may be configured to clean the substrate between the first polishing and the second polishing. The cleaning module (22) may be configured to perform cleaning on the substrate during the process in which the substrate polished at the first polishing pad (1216) is transferred to the second polishing pad (1217) by the transfer module (21).

[0084] In one embodiment, the cleaning module (22) may be positioned on a path where a substrate polished on the first polishing pad (1216) is transferred to the second polishing pad (1217). For example, as shown in FIG. 4, the cleaning module (22) may be positioned on the first transfer track (TO1) formed by the first rotating part (1211). However, this is exemplary and the position of the cleaning module (22) is not limited thereto. For example, the cleaning module (22) may be positioned on at least one of the first transfer track (TO1) formed by the first rotating part (1211), the second transfer track (TO2) formed by the second rotating part (1212), and the third transfer track (TO3) formed by the third rotating part (1213). One or more cleaning modules (22) may be provided. For example, as shown in FIG. 4, a plurality (e.g., 3) of cleaning modules (22) may be positioned between adjacent third stages (12111). However, this is exemplary and the number and / or position of the cleaning modules (22) are not limited thereto.

[0085] In one embodiment, the cleaning module (22) may be configured to clean the substrate in a manner according to at least one of wet cleaning and dry cleaning. For example, the cleaning module (22) may include a fluid spray nozzle configured to spray fluid toward the substrate. For example, the fluid sprayed from the cleaning module (22) may include at least one of pure water, cleaning liquid, carbon dioxide, nitrogen, and inert gas. However, this is exemplary and the fluid sprayed from the cleaning module (22) is not limited thereto. For example, the cleaning module (22) may spray fluid toward the substrate at high pressure or spray fluid evenly over the entire surface of the substrate in a spray manner. For example, the cleaning module (22) may include a brush that is in direct contact with the substrate. For example, the cleaning module (22) may include an ultrasonic vibration generator that transmits vibration to the substrate. For example, the cleaning module (22) may include a plasma generator that generates plasma toward the substrate. For example, the cleaning module (22) may include a vacuum suction nozzle for sucking up foreign substances detached from the substrate. For example, the cleaning module (22) may include at least one of an ion emitter, a laser generator, an infrared generator, an ultraviolet generator, and an electromagnetic wave generator. However, the above-described method is exemplary, and the type of cleaning module (22) is not limited thereto. For example, the cleaning module (22) may be configured by combining the above-described methods. The cleaning module (22) may include a separate chamber for cleaning. For example, cleaning by the cleaning module (22) may be performed while the substrate is positioned inside the chamber. However, this is exemplary, and the cleaning module (22) may be configured to clean the substrate in real time while the substrate polished at the first polishing pad (1216) is transferred to the second polishing pad (1217).

[0086] In one embodiment, foreign substances attached to the substrate after the first polishing (e.g., slurry supplied during the first polishing process and / or particles generated during the first polishing process) can be removed by the cleaning module (22) while the substrate is being transported. According to this process, foreign substances attached to the substrate can be removed before the second polishing is performed, so the quality of the second polishing can be improved and productivity can be improved. For example, a first slurry can be supplied in the first polishing process, and a second slurry different from the first slurry can be supplied in the second polishing process. Even if different slurries are used in each polishing process, the substrate is cleaned by the cleaning module (22) during the substrate transport process before and after each polishing process, so the mixing of different types of slurries in each polishing process can be prevented. For example, by removing the first slurry attached to the substrate in advance before the second polishing is performed, interference caused by the first slurry during the second polishing can be eliminated, thereby improving the quality of the second polishing. In addition, since the substrate can be cleaned while being transferred from the first polishing pad (1216) to the second polishing pad (1217), the copper wire can be optimized and the process time can be shortened.

[0087] In one embodiment, a contamination detection module (not shown) may be configured to detect the contamination level of a substrate during the process in which a substrate polished on a first polishing pad (1216) is transferred to a second polishing pad (1217). Depending on the contamination level detected by the contamination detection module, the intensity of cleaning the substrate by the cleaning module (22) may be adjusted. For example, depending on the contamination level detected by the contamination detection module, the cleaning process time may be adjusted, the number of cleaning processes may be adjusted, or cleaning parameters (e.g., pressure, temperature, chemical solution and / or frequency, etc.) may be adjusted. For example, the cleaning module (22) may perform cleaning until all of the first slurry attached to the substrate is removed. With such a configuration, the first slurry and the second slurry may be prevented from mixing with each other during the second polishing process, and interference caused by the first slurry during the second polishing process may be eliminated.

[0088] In one embodiment, during the process in which a substrate polished on a first polishing pad (1216) is transferred to a second polishing pad (1217), after the substrate is cleaned by a cleaning module (22), the transfer module (21) may rotate the substrate so that the substrate is dried. With such a configuration, the substrate can be naturally dried by the rotation of the substrate. However, this is exemplary, and the cleaning module (22) may further include a separate drying device.

[0090] FIG. 5 is a schematic plan view of a substrate polishing device according to one embodiment.

[0091] Referring to FIG. 5, a substrate polishing device (2-1) according to one embodiment may be a device for performing a polishing process on a substrate. The substrate polishing device (2-1) may include a first polishing pad (1216), a second polishing pad (1217), a transfer module (21), a cleaning module (22-1), and a contamination detection module (not shown). In describing the embodiment according to FIG. 5, regarding content that overlaps with the embodiment according to FIG. 4, the above-described content shall be applied to the extent that there is no conflict between them.

[0092] In one embodiment, the cleaning module (22-1) may be coupled to the transfer module (21) so as to be moved together with the transfer module (21). For example, the cleaning module (22-1) may be attached to the transfer module (21), formed integrally with the transfer module (21), formed as part of the transfer module (21), or embedded inside the transfer module (21). For example, the cleaning module (22-1) may be located in at least one of the first rotating part (1211), the second rotating part (1212), the third rotating part (1213), the first loading part (1214), and the second loading part (1215). One or more cleaning modules (22) may be provided. For example, as shown in FIG. 5, a plurality (e.g., three) of cleaning modules (22-1) may be located at each third stage (12111) of the first rotating part (1211). For example, the cleaning module (22-1) may be supported from the bottom surface of the third stage (12111) or located inside the bottom surface. However, this is exemplary and the number and / or location of the cleaning module (22) is not limited thereto. For example, the cleaning module (22) may be integrated with the second rotating part (1212) and / or the third rotating part (1213).

[0093] In one embodiment, the cleaning module (22-1) may be configured to perform cleaning in real time while the substrate polished at the first polishing pad (1216) is transferred to the second polishing pad (1217) by the transfer module (21). Since the cleaning module (22-1) is coupled to the transfer module (21), the cleaning module (22-1) can clean the substrate in real time without stopping the transfer while the substrate is being transferred by the transfer module (21). With this configuration, the process time for cleaning can be prevented, thereby improving process efficiency.

[0095] Although the embodiments have been described above with reference to the limited drawings, those skilled in the art can apply various technical modifications and variations based on the above. For example, suitable results may be achieved even if the described techniques are performed in a different order than described, and / or if the components of the described system, structure, device, circuit, etc. are combined or assembled in a form different from described, or replaced or substituted by other components or equivalents.

[0096] Therefore, other implementations, other embodiments, and equivalents to the claims also fall within the scope of the claims set forth below. Explanation of the symbols

[0097] 2: Substrate Polishing System 1216: 1st grinding pad 1217: 2nd grinding pad 21: Transfer Module 22: Cleaning Module

Claims

Claim 1 A substrate polishing device comprising: a first polishing pad configured to polish a substrate first; a second polishing pad configured to polish the substrate polished at the first polishing pad second; a transfer module configured to transfer the substrate between the first polishing pad and the second polishing pad; and a cleaning module configured to perform cleaning on the substrate during the process of transferring the substrate polished at the first polishing pad to the second polishing pad. Claim 2 In claim 1, the cleaning module is a substrate polishing device in which the substrate polished at the first polishing pad is transferred to the second polishing pad. Claim 3 In paragraph 2, the substrate polishing device is configured such that the cleaning module cleans the substrate in a manner according to at least one of wet cleaning and dry cleaning. Claim 4 In claim 1, the cleaning module performs cleaning in real time while the substrate polished at the first polishing pad is transferred to the second polishing pad. Claim 5 In paragraph 4, the cleaning module is coupled to the transfer module so as to move together with the transfer module, forming a substrate polishing device. Claim 6 In claim 5, the cleaning module comprises at least one of an ultrasonic vibration generator, a plasma generator, a brush, a fluid injection nozzle, and a vacuum suction nozzle, forming a substrate polishing device. Claim 7 A substrate polishing device according to claim 1, further comprising a contamination detection module configured to detect the contamination level of the substrate during the process in which the substrate polished at the first polishing pad is transferred to the second polishing pad. Claim 8 A substrate polishing device according to claim 7, wherein the intensity of the cleaning module cleaning the substrate is adjusted according to the contamination level detected by the contamination level detection module. Claim 9 A substrate polishing device according to claim 1, wherein, during the process in which the substrate polished at the first polishing pad is transferred to the second polishing pad, the substrate is cleaned by the cleaning module, and the transfer module rotates the substrate so as to dry the substrate. Claim 10 A substrate polishing apparatus according to claim 1, configured such that a first slurry is supplied in a first polishing process and a second slurry different from the first slurry is supplied in a second polishing process. Claim 11 A substrate polishing device according to claim 10, wherein the cleaning module is configured to remove the first slurry attached to the substrate during the process in which the substrate polished at the first polishing pad is transferred to the second polishing pad. Claim 12 In claim 11, the substrate polishing device, wherein the cleaning module is configured to perform cleaning until all of the first slurry is removed.

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