Gas introduction assembly, semiconductor process chamber and semiconductor process method

Abstract

The present application discloses a gas introduction assembly, a semiconductor process chamber, and a semiconductor process method, which fall within the field of semiconductor technology. The gas introduction assembly includes interconnected gas introduction windows and a switching valve plate. A first gas inlet and a second gas inlet are installed in the gas introduction window. The switching valve plate can move between a first position and a second position relative to the gas introduction window. Additionally, a gas passage is installed in the switching valve plate, and the gas passage communicates with the gas discharge end of the gas introduction assembly. When the switching valve plate is in the first position, the first gas inlet communicates with the gas passage, and the second gas inlet is blocked from the gas passage. When the switching valve plate is in the second position, the second gas inlet communicates with the gas passage, and the first gas inlet is blocked from the gas passage. In this way, by adjusting the position of the switching valve plate, the gas from the previous process can be blocked directly at the gas introduction window position, thereby preventing residual gas from the previous process from being involved in the next process. This is advantageous for improving process efficiency.

Description

Technology Field

[0001] The present application belongs to the field of semiconductor technology and, specifically, relates to a gas introduction assembly, a semiconductor process chamber, and a semiconductor process method. Background Technology

[0002] In the field of semiconductor manufacturing, the Bosch process refers to a process of depositing a thin film on etched lateral edges to prevent or mitigate lateral etching during integrated circuit manufacturing. It is primarily executed by switching between an etching step led by fluorine-based gases and a deposition step led by carbon fluorine gases.

[0003] In the prior art, a semiconductor process chamber includes a chamber body, a deposition gas supply device, and an etching gas supply device. The deposition gas supply device is connected to the interior of the chamber body through a first conduit, and the etching gas supply device is connected to the interior of the chamber body through a second conduit. Control valves are installed in both the first conduit and the second conduit, and the conduction and blockage of the first conduit and the second conduit are controlled using the control valves. Furthermore, the deposition gas or etching gas is controlled to flow into the chamber body, thereby enabling the switching between the etching process and the deposition process.

[0004] When the control valve opens the first conduit and closes the second conduit, the deposition gas flows into the chamber body and the etching gas is blocked. However, some of the etching gas remaining in the second conduit also flows into the chamber body and mixes with the deposition gas, thereby participating in the process. Similarly, when the control valve closes the first conduit and opens the second conduit, the deposition gas is blocked and the etching gas flows into the chamber body. However, some of the deposition gas remaining in the first conduit also flows into the chamber body and mixes with the etching gas, thereby participating in the process. Therefore, if the process gas remaining from the previous process participates in the next process during gas switching, an uneven scalloped structure is formed on the etched sidewall, and the rough sidewall affects the subsequent process, causing a decrease in the yield of the device.

[0005] The objective of the embodiments of the present application is to provide a gas introduction assembly, a semiconductor process chamber, and a semiconductor process method, thereby solving the problem in the related technology where the gas introduction assembly affects the process effect due to residual gas during the gas switching process.

[0006] In a first aspect, the present application embodiment provides a gas introduction assembly. The gas introduction assembly includes a gas introduction window and a switching valve plate connected to each other. A first gas inlet and a second gas inlet are installed in the gas introduction window. The switching valve plate can move between a first position and a second position with respect to the gas introduction window. Additionally, a gas passage is installed in the switching valve plate, and the gas passage is in communication with a gas discharge end of the gas introduction assembly.

[0007] When the switching valve plate is positioned in the first position, the first gas inlet is in communication with the gas passage, and the second gas inlet is blocked from the gas passage. When the switching valve plate is positioned in the second position, the second gas inlet is in communication with the gas passage, and the first gas inlet is blocked from the gas passage.

[0008] In a second aspect, an embodiment of the present application further provides a gas introduction assembly, which includes a first gas introduction unit and a second gas introduction unit.

[0009] The first gas introduction unit includes a first gas introduction pipe, a first gas exhaust pipe, and a first switching valve plate. The gas inlet of the first gas exhaust pipe and the gas outlet of the first gas introduction pipe are installed in parallel, and the first switching valve plate is rotatably installed at the gas inlet of the first gas exhaust pipe and the gas outlet of the first gas introduction pipe.

[0010] The second gas introduction unit includes a second gas introduction pipe, a second gas exhaust pipe, and a second switching valve plate. The gas inlet of the second gas exhaust pipe and the gas outlet of the second gas introduction pipe are installed in parallel, and the second switching valve plate is rotatably installed at the gas inlet of the second gas exhaust pipe and the gas outlet of the second gas introduction pipe.

[0011] The first gas introduction unit and the second gas introduction unit are alternately connected to the gas discharge end of the gas introduction assembly.

[0012] In a third aspect, an embodiment of the present application further provides a semiconductor process chamber, which comprises a chamber body and the aforementioned gas introduction assembly. A gas discharge end of the gas introduction assembly is in communication with the chamber body.

[0013] In a fourth aspect, an embodiment of the present application further provides a semiconductor process method, which is applied to a gas introduction assembly according to the first aspect described above. The method comprises the following steps.

[0014] The first process step controls the switching valve plate to move to a first position so that the first gas flows into the chamber body through the first gas inlet.

[0015] The second process step controls the switching valve plate to move to a second position so that the second gas flows into the chamber body through the second gas inlet.

[0016] The above first process step and second process step are performed alternately.

[0017] In a fifth aspect, an embodiment of the present application further provides a semiconductor process method, which is applied to a gas introduction assembly according to the second aspect described above. The method comprises the following steps.

[0018] The first process step controls the first gas introduction unit to communicate with the gas discharge end of the gas introduction assembly, so that the first switching valve plate is in a position to block the gas introduction port of the first gas exhaust pipe, and the second switching valve plate is in a rotated state.

[0019] The second process step controls the second gas introduction unit to communicate with the gas discharge end of the gas introduction assembly, so that the second switching valve plate is in a position to block the gas inlet of the second gas exhaust pipe, and the first switching valve plate is in a rotated state.

[0020] In an embodiment of the present application, in a configuration where the gas introduction assembly includes a gas introduction window and a switching valve plate, by changing the position of the switching valve plate relative to the gas introduction window, it can be implemented so that the first gas inlet and the gas outlet of the gas introduction assembly are in communication, or the second gas inlet and the gas outlet of the gas introduction assembly are in communication. The gas outlet of the gas introduction assembly is always in communication with the chamber body. Since the gas introduction window is located at the top of the chamber body and is adjacent to the chamber body, the switching valve plate directly blocks the previous process gas at the location of the gas introduction window. Therefore, it effectively prevents residual gas from the previous process from flowing into the chamber body and participating in the next process. This is advantageous for improving process efficiency as it prevents the two process gases from mixing and participating in the process. Furthermore, since the switching valve plate is installed adjacent to the chamber body, the rate at which the process gas flows into the chamber body is fast, and it prevents the problem of gas introduction delay caused by the process gas circulating within the pipeline. As the gas introduction delay time is effectively shortened, the pressure control process of the chamber body in both processes is also performed relatively quickly and accurately. Furthermore, the pressure difference value of the chamber body can be controlled more easily during the two process steps, which is advantageous for improving process efficiency.

[0021] In a configuration where the gas introduction assembly includes a first gas introduction unit and a second gas introduction unit, the first gas introduction unit and the second gas introduction unit are alternately connected to the gas discharge end of the gas introduction assembly. When the first gas introduction unit is connected to the gas discharge end of the gas introduction assembly, the second switching valve plate can be rotated to a position that opens the second gas exhaust pipe, and the second gas exhaust pipe pumps the gas from the second gas introduction pipe to discharge the process gas within the second gas introduction pipe. This prevents the residual process gas from flowing into the chamber body and mixing with the process gas of the next process to be involved in the next process. Similarly, when the second gas introduction unit is connected to the gas discharge end of the gas introduction assembly, the first switching valve plate can be rotated to a position that opens the first gas exhaust pipe, and the first gas exhaust pipe pumps the gas from the first gas introduction pipe to discharge the process gas within the first gas introduction pipe. This prevents the residual process gas from flowing into the chamber body and mixing with the process gas of the next process to be involved in the next process. This is advantageous for improving process efficiency and, furthermore, for improving device yield. Brief explanation of the drawing

[0022] FIG. 1 is a structural diagram of a semiconductor process chamber disclosed in an embodiment of the present application. FIG. 2 is a structural diagram of a gas introduction assembly disclosed in one embodiment of the present application. FIG. 3 is a cross-sectional view of a gas introduction assembly when the switching valve plate disclosed in one embodiment of the present application is in a first position. FIG. 4 is a cross-sectional view of a gas introduction assembly in which the switching valve plate disclosed in one embodiment of the present application is in a second position. FIG. 5 is a plan view of a flow homogenization plate disclosed in one embodiment of the present application. FIG. 6 is a partial schematic diagram of a flow homogenizing plate disclosed in one embodiment of the present application. FIG. 7 is a structural diagram of a pressure control valve when the exhaust port disclosed in an embodiment of the present application is in a closed state. FIG. 8 is a schematic diagram of the operation of a pressure control valve when the exhaust port disclosed in an embodiment of the present application is in an open state. FIG. 9 is a flowchart of a semiconductor process method disclosed in an embodiment of the present application. FIG. 10 is a timing diagram of a semiconductor process method disclosed in an embodiment of the present application. FIG. 11 is a structural diagram of a semiconductor process chamber disclosed in another embodiment of the present application. FIG. 12 is a structural diagram of a gas introduction assembly disclosed in another embodiment of the present application. FIG. 13 is a schematic diagram of the operation of a first rotary valve plate disclosed in another embodiment of the present application. Specific details for implementing the invention

[0023] Hereinafter, the technical solution of the embodiments of the present application is clearly explained with reference to the accompanying drawings of the embodiments of the present application. The described embodiments are merely some embodiments, not all, of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art to which the present invention pertains fall within the scope of protection of the present application.

[0024] The terms "first" and "second" in the specification and claims of this application are intended to distinguish similar objects and do not describe a specific order or sequence. Data used in this manner may be compatible in appropriate circumstances so that embodiments of this application may be implemented in an order other than that shown or described herein. Furthermore, objects distinguished as "first," "second," etc., are typically of a single type and do not limit the number of objects. For example, the first object may be one or multiple. Additionally, in the specification and claims, "and / or" indicates at least one of the connected objects, and the character " / " generally indicates that the preceding and succeeding related objects are in a kind of "or" relationship.

[0025] Hereinafter, with reference to the attached drawings, the gas introduction assembly, semiconductor process chamber, and semiconductor process method provided in the embodiments of the present application will be described in detail through specific embodiments and application scenarios.

[0026] In some embodiments of the present application, referring to FIGS. 1 and 2, a gas introduction assembly (200) may include a gas introduction window (210) and a switching valve plate (220). The gas introduction window (210) is used to inject different gases. The switching valve plate (220) is used to switch the gases so that the gases flow to the gas outlet of the gas introduction assembly (200). For example, the gases injected into the gas introduction window (210) may be different process gases, such as deposition gas and etching gas. That is, the gas introduction window (210) is used to inject deposition gas and etching gas, and the switching valve plate (220) is used to switch so that the deposition gas or etching gas flows to the gas outlet of the gas introduction assembly (200). More specifically, the gas introduction assembly (200) implements a Bosch process by alternately injecting deposition gas and etching gas into the chamber body (100).

[0027] As illustrated in FIG. 2, a switching valve plate (220) is installed facing the gas introduction window (210) and adjacent to the gas introduction window (210). A first gas introduction port (211) and a second gas introduction port (212) are installed in the gas introduction window (210). For example, the first gas introduction port (211) is used to inject etching gas, and the second gas introduction port (212) is used to inject deposition gas. Of course, the first gas introduction port (211) and the second gas introduction port (212) may each inject different types of process gases.

[0028] In the embodiment illustrated in FIG. 1, the first gas inlet (211) can be connected to an external first gas flow controller (510), and the second gas inlet (212) can be connected to an external second gas flow controller (610).

[0029] As illustrated in FIGS. 2 through 4, the switching valve plate (220) is connected to the gas inlet window (210). The switching valve plate (220) is used to control whether the first gas inlet port (211) and the second gas inlet port (212) are in communication with the gas outlet of the gas inlet assembly (200). The switching valve plate (220) can move relative to the gas inlet window (210). In some embodiments, the switching valve plate (220) is movable relative to the gas inlet window (210), and the switching valve plate (220) can be moved manually or using a moving drive member. For example, the moving drive member may be a linear drive member such as a linear module or a pneumatic cylinder. In some other embodiments, the switching valve plate (220) may also be rotatable relative to the gas inlet window (210). The switching valve plate (220) rotates within the plane in which it is located so that the gas passage communicates with the first gas inlet (211) or the second gas inlet (212), and the switching valve plate (220) can be rotated manually or using a driving source. For example, the driving source may be a driving source that provides rotational power, such as a motor or a pneumatic motor.

[0030] The switching valve plate (220) is movable between a first position and a second position relative to the gas introduction window (210). A gas passage is installed in the switching valve plate (220), and the gas passage is in communication with the gas discharge end of the gas introduction assembly (200). When the switching valve plate is in the first position, the first gas introduction port (211) is in communication with the gas passage, and the second gas introduction port (212) is blocked from the gas passage. At this time, the first gas is introduced into the chamber body (100) through the gas introduction assembly (200), and the first process is initiated. When the switching valve plate (220) is in the second position, the second gas introduction port (212) is in communication with the gas passage, and the first gas introduction port (211) is blocked from the gas passage. At this time, the second gas is introduced into the chamber body (100) through the gas introduction assembly (200), and the second process is initiated. For example, the first gas injected into the first gas inlet (211) is an etching gas, and the first process is an etching process. The second gas injected into the second gas inlet (212) is a deposition gas, and the second process is a deposition process. In this way, the switching valve plate (220) moves only a relatively short distance so that the gas passage above it is connected to the first gas inlet (211) or connected to the second gas inlet (212), thereby enabling the switching between the first gas and the second gas.

[0031] That is, by changing the movement position of the switching valve plate (220), the first gas located at the first gas inlet (211) or the second gas located at the second gas inlet (212) can be rapidly introduced into the chamber body (100) through the gas introduction assembly (200).

[0032] In conventional technology, the distance between the control valve and the chamber body is relatively far. Therefore, when the control valve switches gas, a large amount of process gas from the previous process remains in the conduit between the control valve and the chamber body, and flows into the chamber body along with the next process, thereby forming an uneven scalloped structure on the etched sidewall.

[0033] In this embodiment, by changing the position of the switching valve plate (220), the first gas inlet (211) and the gas discharge end of the gas inlet assembly (200) can be connected, or the second gas inlet (212) and the gas discharge end of the gas inlet assembly (200) can be connected. The gas discharge end of the gas inlet assembly (200) is always connected to the chamber body (100). Since the gas inlet window (210) is located at the top of the chamber body (100), the switching valve plate (220) directly blocks the previous process gas at the position of the gas inlet window (210). That is, by installing the switching valve plate (220) at the position of the gas inlet window (210), the distance between the switching valve plate (220) and the chamber body (100) is greatly reduced, so that the space where residual gas from the previous process can remain between the switching valve plate (220) and the chamber body (100) is reduced to a level that is almost negligible. This effectively prevents residual gas from the previous process from entering the chamber body (100) and participating in the next process, and prevents the two process gases from mixing and participating in the process, which is advantageous for improving process efficiency. In addition, since the switching valve plate (220) is installed adjacent to the chamber body (100), the speed at which the process gas enters the chamber body (100) is fast, and the problem of gas introduction delay caused by the process gas circulating within the pipeline is prevented. As the gas introduction delay time is effectively shortened, the pressure control process of the chamber body (100) in the two process processes is also performed relatively quickly and accurately. Furthermore, the pressure difference value of the chamber body (100) in the two process processes can be controlled more easily.

[0034] In some embodiments, the first gas inlet (211) is used to inject etching gas, and the second gas inlet (212) is used to inject deposition gas. The two process steps are the etching process and the deposition process, respectively. The gas inlet assembly (200) of this embodiment can be used in the Bosch etching process. By rapidly switching between the etching process and the deposition process, the formation of an uneven scalloped structure on the sidewalls of the deep hole obtained by etching is effectively prevented, thereby making the sidewalls of the deep hole smoother. This prevents the impact on subsequent processes, which is advantageous for improving the yield of the device.

[0035] In some other embodiments, referring to FIG. 2, the first gas inlet (211) and the second gas inlet (212) are installed in pairs. Multiple pairs of the first gas inlet (211) and the second gas inlet (212) are spaced apart along the circumferential direction of the gas inlet window (210). In the example of FIG. 2, six pairs of the first gas inlet (211) and the second gas inlet (212) are illustrated exemplarily. Those skilled in the art to which the present invention pertains will understand that more or fewer pairs of the first gas inlet (211) and the second gas inlet (212) are also possible. Accordingly, multiple gas passages are spaced apart. Each gas passage corresponds to each pair of the first gas inlet (211) and the second gas inlet (212). By adopting this embodiment, through a plurality of pairs of second gas inlets (212) and first gas inlets (211), the plurality of second gas inlets (212) or the plurality of first gas inlets (211) are implemented to simultaneously introduce gas. This is advantageous for improving gas introduction uniformity by increasing the gas discharge area, based on improving gas introduction efficiency and process efficiency.

[0036] For example, the gas inlet window (210) may be circular in shape. The second gas inlet (212) and the first gas inlet (211) may be opened on the periphery of the gas inlet window (210). However, this is not limiting. In some other embodiments, the second gas inlet (212) and the first gas inlet (211) may be opened on the top surface of the gas inlet window (210). The embodiments of the present application do not limit the location of opening the second gas inlet (212) and the first gas inlet (211).

[0037] In this embodiment, for example, six pairs of second gas inlets (212) and first gas inlets (211) are spaced apart along the circumferential direction of the gas inlet window (210). For example, six gas passages are spaced apart. Each gas passage corresponds to each pair of second gas inlets (212) and first gas inlets (211).

[0038] Of course, in other embodiments, the gas introduction window (210) may be equipped with one first gas introduction port (211) and one second gas introduction port (212).

[0039] In the embodiments illustrated in FIGS. 1 to 4, the gas introduction assembly (200) further includes a blocking member. The blocking member is installed between the gas introduction window (210) and the switching valve plate (220). The gas passage includes a first gas passage section (221) and a second gas passage section (222). The outlet end of the first gas passage section (221) and the outlet end of the second gas passage section (222) are each in communication with the gas discharge end of the gas introduction assembly (200). The blocking member selectively blocks the first gas passage section (221) or the second gas passage section (222) depending on the movement position of the switching valve plate (220). For example, the blocking member may be an elastic structure or a rigid structure, and the embodiments of the present application do not specifically limit the structure of the blocking member.

[0040] Referring to FIG. 3, when the switching valve plate (220) is in the first position, the first gas inlet (211) is in communication with the inlet end of the first gas passage section (221), and the blocking member blocks the inlet end of the second gas passage section (222) so that the second gas inlet (212) cannot be in communication with the second gas passage section (222). Referring to FIG. 4, when the switching valve plate (220) is in the second position, the second gas inlet (212) is in communication with the inlet end of the second gas passage section (222), and the blocking member blocks the inlet end of the first gas passage section (221) so that the first gas inlet (211) cannot be in communication with the first gas passage section (221).

[0041] That is, the first gas passage section (221) and the second gas passage section (222) both have an inlet end and an outlet end. The outlet end of the first gas passage section (221) and the outlet end of the second gas passage section (222) are each connected to the gas discharge end of the gas introduction assembly (200). When the switching valve plate (220) is located at the first position shown in FIG. 3, the first gas inlet port (211) is connected to the inlet end of the first gas passage section (221), and the blocking member blocks the inlet end of the second gas passage section (222). When the switching valve plate (220) is located at the second position shown in FIG. 4, the second gas inlet port (212) is connected to the inlet end of the second gas passage section (222), and the blocking member blocks the inlet end of the first gas passage section (221).

[0042] For example, when the switching valve plate (220) is in the first position, the first gas inlet (211) is opposite to the first gas passage section (221), and the second gas inlet (212) is opposite to the second gas passage section (222). When the switching valve plate (220) is in the second position, the first gas inlet (211) is opposite to the first gas passage section (221), and the second gas inlet (212) is opposite to the second gas passage section (222).

[0043] Depending on the movement position of the switching valve plate (220), the blocking member directly blocks the first gas passage section (221) or the second gas passage section (222), thereby controlling the flow and blocking between the first gas inlet (211) and the first gas passage section (221), and between the second gas inlet (212) and the second gas passage section (222). This prevents some of the first gas from flowing into the first gas passage section (221) when the first gas inlet (211) and the first gas passage section (221) are not connected. Additionally, it prevents some of the second gas from flowing into the second gas passage section (222) when the second gas inlet (212) and the second gas passage section (222) are not connected. This is advantageous for improving the gas blocking effect during the process.

[0044] Additionally, when the corresponding gas passage section is blocked using a blocking member, one of the first gas and the second gas flows to the gas discharge end of the gas introduction assembly (200), while the other becomes gas suppressed. Then, the air pressure in the gas passage section corresponding to the gas in the gas suppression state gradually increases, and when the switching valve plate (220) moves to release the corresponding gas, the gas flows into the corresponding gas passage section more quickly. This is advantageous for improving the gas switching speed and process efficiency.

[0045] Of course, in other embodiments, the gas introduction assembly (200) may not have a blocking member installed. When the switching valve plate (220) is in the first position, the switching valve plate (220) directly blocks the second gas introduction port (212) so that the second gas introduction port (212) does not communicate with the gas passage. When the switching valve plate (220) is in the second position, the switching valve plate (220) directly blocks the first gas introduction port (211) so that the first gas introduction port (211) does not communicate with the gas passage.

[0046] In some embodiments, the number of blocking members is one, and the blocking member is fixed in position relative to the gas introduction window (210). When the switching valve plate (220) is in the first position, the blocking member blocks the second gas passage section (222) to prevent the second gas from flowing into the chamber body (100) through the gas passage. When the switching valve plate (220) is in the second position, the blocking member blocks the first gas passage section (221) to prevent the first gas from flowing into the chamber body (100) through the gas passage.

[0047] In another embodiment, the number of blocking members is at least two, including a first blocking member (231) and a second blocking member (232). The first blocking member (231) is installed at the inlet end of the first gas passage section (221), and the second blocking member (232) is installed at the inlet end of the second gas passage section (222), and the blocking members are elastic structures. The first blocking member (231) and the second blocking member (232) are fixed in position relative to the gas introduction window (210). During the movement of the switching valve plate (220), elastic deformation may occur in the first blocking member (231) and the second blocking member (232). Accordingly, the shape of the first blocking member (231) and the second blocking member (232) changes. The deformation state of the first blocking member (231) determines whether the first gas passage section (221) of the first blocking member (231) is blocked, and likewise, the deformation state of the second blocking member (232) determines whether the second gas passage section (222) of the second blocking member (232) is blocked.

[0048] When the switching valve plate (220) is in the first position, as shown in FIG. 3, the first blocking member (231) is in an elastically deformed state, so the shape of the first blocking member (231) changes. The first blocking member (231) no longer blocks the first gas passage section (221), so the first gas inlet (211) and the inlet end of the first gas passage section (221) are connected, and the second blocking member (232) blocks the inlet end of the second gas passage section (222). When the switching valve plate (220) is in the second position, as shown in FIG. 4, the second blocking member (232) is in an elastically deformed state, so the shape of the second blocking member (232) changes. The second blocking member (232) no longer blocks the second gas passage section (222), so the second gas inlet (212) and the inlet end of the second gas passage section (222) are connected, and the first blocking member (231) blocks the inlet end of the first gas passage section (221).

[0049] In some embodiments, when the switching valve plate (220) is in the first position, as shown in FIG. 3, the first blocking member (231) is in a compressed state. Therefore, the volume of the first blocking member (231) is relatively small. The first blocking member (231) does not block the inlet end of the first gas passage section (221), and at the same time, the second blocking member (232) does not undergo elastic deformation. That is, the second blocking member (232) is in a relaxed state, and the volume of the second blocking member (232) is relatively large. Therefore, the second blocking member (232) directly blocks the inlet end of the second gas passage section (222). When the switching valve plate (220) is in the second position, as shown in FIG. 4, the first blocking member (231) does not undergo elastic deformation. That is, the first blocking member (231) is in a relaxed state, and the volume of the first blocking member (231) is relatively large. Accordingly, the first blocking member (231) directly blocks the inlet end of the first gas passage section (221). At the same time, the second blocking member (232) is in a compressed state, and the volume of the second blocking member (232) becomes relatively small. Therefore, the second blocking member (232) does not block the inlet end of the second gas passage section (222).

[0050] By adopting this embodiment, at least two elastic blocking members are installed. By determining whether to block the corresponding gas passage section based on whether elastic deformation occurs in the blocking members, the blocking effect of the blocking members that undergo elastic deformation is further enhanced and the sealing performance is improved.

[0051] In some other embodiments, the gas introduction assembly (200) further includes a first stop member (241) and a first fixing member (251). The first stop member (241) and the first fixing member (251) are each located on opposite sides of the first blocking member (231). The first stop member (241) is connected to the gas introduction window (210), and the first fixing member (251) is connected to the switching valve plate (220). As the switching valve plate (220) switches from a second position to a first position, the distance between the first stop member (241) and the first fixing member (251) changes. Since the first blocking member (231) is located between these two, the first stop member (241) and the first fixing member (251) compress the first blocking member (231), causing elastic deformation to occur in the first blocking member (231). Here, the first stop member (241) and the first fixing member (251) may both be block-shaped structures, and of course, may have other structures. The embodiments of the present application do not limit the structures of the first stop member (241) and the first fixing member (251).

[0052] For example, the first stop member (241) and the gas introduction window (210) can be fixedly connected by means such as welding or bonding. The first stop member (241) is fixed in position relative to the gas introduction window (210). The first fixing member (251) and the switching valve plate (220) are also fixedly connected by means such as welding or bonding to achieve relative fixation between the first fixing member (251) and the switching valve plate (220). The first fixing member (251) moves along the switching valve plate (220).

[0053] By adopting this embodiment, the occurrence of elastic deformation of the first blocking member (231) is controlled by directly utilizing whether the first blocking member (231) is compressed by the first stop member (241) and the first fixing member (251). That is, the occurrence of elastic deformation of the first blocking member (231) is directly controlled through the movement position of the switching valve plate (220). In this way, it is advantageous to accurately change the deformation state of the first blocking member (231) through a mechanical structure. This prevents a situation in which the first blocking member (231) fails to accurately block the first gas passage section (221) due to abnormal conditions such as a power outage by adopting a method such as electric control.

[0054] Of course, in other embodiments, the first blocking member (231) may be an electric deformation element, and the occurrence of elastic deformation of the first blocking member (231) can be controlled through whether the first blocking member (231) is energized. Alternatively, the first blocking member (231) may be a temperature deformation element, and the occurrence of elastic deformation of the first blocking member (231) can be controlled through whether the first blocking member (231) is heated.

[0055] In some embodiments, the gas introduction assembly (200) further includes a second stop member (242) and a second fixing member (252). The second stop member (242) and the second fixing member (252) are each located on opposite sides of the second blocking member (232). The second stop member (242) is connected to the gas introduction window (210), and the second fixing member (252) is connected to the switching valve plate (220). As the switching valve plate (220) switches from a first position to a second position, the distance between the second stop member (242) and the second fixing member (252) changes, and since the second blocking member (232) is located between the two, the second stop member (242) and the second fixing member (252) compress the second blocking member (232), causing elastic deformation to occur in the second blocking member (232). Here, the second stop member (242) and the second fixing member (252) may both be block-shaped structures, and of course, may have other structures. The embodiments of the present application do not limit the structures of the second stop member (242) and the second fixing member (252).

[0056] For example, the second stop member (242) and the gas introduction window (210) can be fixedly connected by means such as welding or bonding. The second stop member (242) is fixed in position relative to the gas introduction window (210). The second fixing member (252) and the switching valve plate (220) are also fixedly connected by means such as welding or bonding to achieve relative fixation between the second fixing member (252) and the switching valve plate (220). The second fixing member (252) moves along the switching valve plate (220).

[0057] By adopting this embodiment, the occurrence of elastic deformation of the second blocking member (232) is controlled by directly utilizing whether the second blocking member (232) is compressed by the second stop member (242) and the second fixing member (252). That is, the occurrence of elastic deformation of the second blocking member (232) is directly controlled through the movement position of the switching valve plate (220). In this way, it is advantageous to accurately change the deformation state of the second blocking member (232) through a mechanical structure. This prevents a situation in which the second blocking member (232) fails to accurately block the second gas passage section (222) due to abnormal situations such as a power outage by adopting a method such as electric control.

[0058] Of course, in other embodiments, the second blocking member (232) may be an electric deformation element, and the occurrence of elastic deformation of the second blocking member (232) can be controlled through whether the second blocking member (232) is energized. Alternatively, the second blocking member (232) may be a temperature deformation element, and the occurrence of elastic deformation of the second blocking member (232) can be controlled through whether the second blocking member (232) is heated.

[0059] To summarize the above, with reference to FIGS. 3 and 4, as the switching valve plate (220) moves from a second position to a first position, the distance between the first stop member (241) and the first fixed member (251) decreases, so the first blocking member (231) is compressed, and thus the first blocking member (231) cannot block the first gas passage section (221). On the other hand, the distance between the second stop member (242) and the second fixed member (252) increases, so the second blocking member (232) is not compressed, and thus the second blocking member (232) blocks the second gas passage section (222). The first gas inlet (211) communicates with the chamber body (100) through the first gas passage section (221), so that the first process can be initiated within the chamber body (100). During the process in which the switching valve plate (220) moves from a first position to a second position, the distance between the first stop member (241) and the first fixed member (251) increases, so the first blocking member (231) is not compressed, and thus the first blocking member (231) blocks the first gas passage section (221). On the other hand, the distance between the second stop member (242) and the second fixed member (252) decreases, so the second blocking member (232) is compressed, and thus the second blocking member (232) cannot block the second gas passage section (222). The second gas inlet (212) communicates with the chamber body (100) through the second gas passage section (222), so that a second process can be initiated within the chamber body (100).

[0060] In some embodiments, referring to FIGS. 3 and 4, the gas introduction assembly (200) further includes a first sealing member (271). The first sealing member (271) is installed between the switching valve plate (220) and the gas introduction window (210). Additionally, the first sealing member (271) is positioned between the second gas introduction port (212) and the first gas introduction port (211) to isolate the second gas introduction port (212) and the first gas introduction port (211). Here, the first sealing member (271) may be a sealing structure such as a sealing ring or a sealing strip, or may be another sealing structure.

[0061] For example, an opening groove may be installed in the switching valve plate (220), and the first gas inlet (211) and the second gas inlet (212) may be connected to a gas passage through the opening groove. A first sealing member (271) is installed within the opening groove, and the first sealing member (271) has a strip-like structure, and both ends of the first sealing member (271) each contact the groove wall of the opening groove to divide the opening groove into two parts. These two parts are connected to the first gas inlet (211) and the second gas inlet (212), respectively, thereby sealing and isolating the second gas inlet (212) from the first gas inlet (211).

[0062] By adopting this embodiment, the second gas inlet port (212) and the first gas inlet port (211) are isolated using the first sealing member (271), thereby preventing gas mixing between the first gas inlet port (211) and the second gas inlet port (212), which is advantageous for improving the sealing performance of the gas inlet assembly (200).

[0063] In some embodiments, the gas introduction assembly (200) further includes a second sealing member (272). The second sealing member (272) is installed between the gas introduction window (210) and the switching valve plate (220) to seal the gap between the gas introduction window (210) and the switching valve plate (220). For example, the second sealing member (272) may be a sealing ring. The sealing ring is installed to surround the first gas introduction port (211) and the second gas introduction port (212). As shown in FIG. 3, the sealing ring surrounds one end adjacent to the first gas passage section (221) of the first gas introduction port (211) and one end adjacent to the second gas passage section (222) of the second gas introduction port (212). That is, since the sealing ring also simultaneously surrounds the first gas passage section (221) and the second gas passage section (222), it is possible to prevent gas from leaking through the gap between the gas introduction window (210) and the switching valve plate (220). Of course, the second sealing member (272) may be a different sealing structure. In an additional embodiment, a second sealing groove is installed on one side of the gas introduction window (210) facing the switching valve plate (220), and the second sealing member (272) is installed within the second sealing groove.

[0064] By adopting this embodiment, the gap between the gas introduction window (210) and the switching valve plate (220) is sealed using the second sealing member (272), thereby preventing the first gas and the second gas from leaking out through the gap between the gas introduction window (210) and the switching valve plate (220), which is advantageous for improving sealing performance.

[0065] Of course, in some other embodiments, the gas introduction assembly (200) may not have the first sealing member (271) and the second sealing member (272) installed. By increasing the contact tightness between the switching valve plate (220) and the gas introduction window (210), the sealing performance can be improved to prevent gas mixing and leakage.

[0066] In the embodiment of the present application, referring to FIGS. 2 to 6, the gas introduction assembly (200) further includes a flow equalization plate (260). The flow equalization plate (260) is located on one side facing away from the gas introduction window (210) of the switching valve plate (220). A plurality of flow equalization holes (262) are installed in the flow equalization plate (260). The gas passage communicates with the gas discharge end of the gas introduction assembly (200) through each of the flow equalization holes (262).

[0067] By adopting this embodiment, the first gas or the second gas introduced into the switching valve plate (220) is classified using the flow equalization hole (262) on the flow equalization plate (260), so that the first gas or the second gas is discharged relatively uniformly. This is advantageous for improving process uniformity.

[0068] Of course, in some other embodiments, the gas introduction assembly (200) may not have a flow homogenizing plate (260) installed. The gas passage of the switching valve plate (220) is in direct communication with the outlet end of the gas introduction assembly (200).

[0069] In some embodiments, the flow equalization hole (262) on the flow equalization plate (260) is in direct communication with the gas passage.

[0070] In some other embodiments, a flow equalization groove (261) is further installed in the flow equalization plate (260). The flow equalization groove (261) and the switching valve plate (220) form a flow equalization space, and the flow equalization groove (261) communicates a plurality of flow equalization holes (262) and a gas passage. That is, the gas passage communicates with the gas discharge end of the gas introduction assembly (200) through the flow equalization groove (261) and the flow equalization holes (262). For example, the flow equalization groove (261) may be a circular groove or a groove of other shape. It is sufficient that it can communicate with each of the flow equalization holes (262). By adopting this embodiment, before the process gas is introduced into the flow homogenization hole (262) from the first gas inlet (211) or the second gas inlet (212), it is first diffused and mixed through the flow homogenization groove (261), and then gas homogenization is performed again through each flow homogenization hole (262). This is advantageous for improving the flow homogenization performance of the flow homogenization plate (260).

[0071] In an embodiment where both the second gas inlet port (212) and the first gas inlet port (211) are installed in multiple numbers, referring to FIGS. 5 and 6, the flow equalization plate (260) has multiple flow equalization areas installed along its circumference. Each flow equalization area has one flow equalization groove (261) and multiple flow equalization holes (262) installed. The flow equalization groove (261) corresponds one-to-one with the first gas inlet port (211) and the second gas inlet port (212). That is, when the first gas inlet port (211) and the second gas inlet port (212) are multiple sets, the first gas inlet port (211) and the second gas inlet port (212) of the same set correspond to one flow equalization groove (261).

[0072] In some embodiments, the gas introduction assembly (200) further includes a third sealing member (273). The third sealing member (273) is installed between the flow equalization plate (260) and the switching valve plate (220) to seal the gap between the flow equalization plate (260) and the switching valve plate (220). For example, the third sealing member (273) may be a sealing ring or other sealing structure. One third sealing member (273) is installed outside each flow equalization area of ​​the flow equalization plate (260). In additional embodiments, a third sealing groove is installed in each flow equalization area of ​​the flow equalization plate (260), and the third sealing member (273) is installed within the third sealing groove.

[0073] By adopting this embodiment, the gap between the flow homogenization plate (260) and the switching valve plate (220) is sealed using the third sealing member (273), thereby preventing the first gas and the second gas from leaking out through the gap between them, which is advantageous for further improving sealing performance.

[0074] Of course, in other embodiments, the gas introduction assembly (200) may not have a third sealing member (273) installed, and the sealing performance may be improved by increasing the contact tightness between the switching valve plate (220) and the flow homogenization plate (260) to prevent gas mixing and leakage.

[0075] Based on the gas introduction assembly (200) disclosed in the present application, embodiments of the present application further disclose a semiconductor process chamber. Referring to FIG. 1, the semiconductor process chamber comprises a chamber body (100) and a gas introduction assembly (200) of the aforementioned embodiment. The chamber body (100) provides a space for semiconductor process processes, and the interior of the chamber body (100) is a vacuum environment. The gas discharge end of the gas introduction assembly (200) communicates with the chamber body (100). The gas introduction assembly (200) is used to supply process gas into the chamber body (100). For example, a gas introduction port (101) is installed in the chamber body (100), and the gas introduction assembly (200) is installed in the gas introduction port (101). In additional embodiments, a gas introduction window (210) is located in the gas introduction port (101), and the gas introduction window (210) is used to seal the gas introduction port (101).

[0076] In this embodiment, the semiconductor process chamber can be applied to a Bosch process, and the process gas includes an etching gas and a deposition gas. The etching gas may be a fluorine-based gas, and the deposition gas may be a carbon-based gas.

[0077] The semiconductor process chamber utilizes the aforementioned gas introduction assembly (200) to enable rapid switching between the first gas and the second gas, thereby preventing gas introduction delay issues in the chamber body (100). This is advantageous for accurately controlling the pressure difference value of the chamber body (100) during different process steps. The semiconductor process chamber can be used, for example, to perform a Bosch etching process to etch high aspect ratio holes. Rapid switching between the etching gas and the deposition gas is enabled, resulting in smoother hole sidewalls obtained by etching, which is advantageous for improving the yield of the device.

[0078] For example, as illustrated in FIG. 1, a base (110) is installed within the chamber body (100), and the base (110) is used to hold a wafer (111). The wafer (111) may be a silicon wafer. A lining (120) is installed on the outer periphery of the base (110). By installing the lining (120), the process gas is prevented from contaminating the inner wall of the chamber body (100) or other components within the chamber body (100).

[0079] In the embodiment of the present application, referring to FIG. 1, an exhaust port is installed in the chamber body (100). The semiconductor process chamber further includes a pressure control valve (400). The pressure control valve (400) is installed in the exhaust port and controls the opening of the exhaust port. Here, the pressure control valve (400) may be a valve body capable of performing opening, closing, and control functions, such as an electronic valve, a butterfly valve, or a ball valve. The embodiment of the present application does not limit the type of pressure control valve (400). In this way, by controlling the pressure control valve (400), the first gas or the second gas that has completed the process is discharged to the outside of the chamber body (100) through the exhaust port, making it easy for the chamber body (100) to proceed to the next process step. This enables rapid switching between different process steps.

[0080] In some embodiments, the semiconductor process chamber further includes a vacuum pump (300). The inlet end of the vacuum pump (300) is in communication with an exhaust port and provides suction power using the vacuum pump (300). The number of vacuum pumps (300) is at least two, including a dry pump (320) and a molecular pump (310). The inlet end of the molecular pump (310) is in direct communication with the exhaust port, and the inlet end of the dry pump (320) is in direct communication with the outlet end of the molecular pump (310). The molecular pump (310) is suitable for gas pumping in a high vacuum environment, and the dry pump (320) is suitable for gas pumping in a low vacuum environment.

[0081] In some embodiments, the pressure control valve (400) includes a valve plate (410) and a driving member (420). The driving member (420) is connected to the valve plate (410). The driving member (420) drives the valve plate (410) to rotate, thereby increasing or decreasing the opening of the exhaust port. For example, the driving member (420) may be a driving source capable of generating rotational power, such as a motor or a pneumatic motor.

[0082] In some other embodiments, referring to FIGS. 7 and 8, the pressure control valve (400) comprises at least two valve plates (410) and a driving member (420). Each valve plate (410) is rotatably installed in an exhaust port to open or close the exhaust port. The driving member (420) is connected to each valve plate (410) and can drive each valve plate (410) to rotate simultaneously. Each valve plate (410) moves away from or closer to each other through rotation to increase or decrease the opening of the exhaust port. For example, the number of driving members (420) is at least two, and the driving member (420) corresponds one-to-one with the valve plate (410). Each driving member (420) drives the corresponding valve plate (410) to rotate so that each valve plate (410) moves away from or closer to each other.

[0083] In the process of adjusting the opening of the exhaust port, at least two valve plates (410) operate simultaneously. Compared to the previous embodiment, the rotational stroke of each valve plate (410) is reduced, that is, the rotational angle of each valve plate (410) is reduced, so the driving time of the driving member (420) is shortened. The operating time of the pressure control valve (400) is shortened, enabling rapid gas pumping of the vacuum pump (300), and further improving the switching efficiency between the etching process and the deposition process.

[0084] In the embodiment illustrated in FIG. 1, the semiconductor process chamber further includes a first gas flow controller (510) and a first gas exhaust pipe (520). The first end of the first gas exhaust pipe (520) and the first gas inlet (211) are each connected to the outlet end of the first gas flow controller (510). The second end of the first gas exhaust pipe (520) is connected to the inlet end of the vacuum pump (300). For example, the first gas inlet (211) is connected to the outlet end of the first gas flow controller (510) through the first pipe. The first gas flow controller (510) controls the flow rate of the first gas introduced into the first gas inlet (211). The first end of the first gas exhaust pipe (520) is in direct communication with the first pipe, and the second end of the first gas exhaust pipe (520) is in communication with the inlet end of the dry pump (320).

[0085] A first control valve (530) is installed in the first gas exhaust pipe (520). For example, the first control valve (530) includes a first needle valve (531) and a first pneumatic stop valve (532). The first needle valve (531) and the first pneumatic stop valve (532) are installed spaced apart in the first gas exhaust pipe (520). In this way, the conduction and blockage of the first gas exhaust pipe (520) can be controlled through the first pneumatic stop valve (532), and the gas flow rate of the first gas exhaust pipe (520) can be precisely controlled through the first needle valve (531).

[0086] By adopting this embodiment, if an abnormality occurs between the first gas inlet port (211) and the first gas flow controller (510) and the first gas inlet port (211) fails to introduce gas normally, the first gas exhaust pipe (520) can be opened using the first control valve (530) so that the first gas can flow into the vacuum pump (300) through the first gas exhaust pipe (520). Thus, the pressure is prevented from becoming too high due to gas suppression.

[0087] In some embodiments, the semiconductor process chamber further includes a second gas flow controller (610) and a second gas exhaust pipe (620). The first end of the second gas exhaust pipe (620) and the second gas inlet (212) are each connected to the outlet end of the second gas flow controller (610). The second end of the second gas exhaust pipe (620) is connected to the inlet end of the vacuum pump (300). For example, the second gas flow controller (610) is connected to the outlet end of the second gas flow controller (610) through the second pipe. The second gas flow controller (610) controls the flow rate of the second gas entering through the second gas inlet (212). The first end of the second gas exhaust pipe (620) is connected directly to the second pipe, and the second end of the second gas exhaust pipe (620) is connected to the inlet end of the dry pump (320).

[0088] A second control valve (630) is installed in the second gas exhaust pipe (620). For example, the second control valve (630) includes a second needle valve (631) and a second pneumatic stop valve (632). The second needle valve (631) and the second pneumatic stop valve (632) are installed spaced apart in the second gas exhaust pipe (620). In this way, the conduction and blockage of the second gas exhaust pipe (620) can be controlled through the second pneumatic stop valve (632), and the gas flow rate of the second gas exhaust pipe (620) can be precisely controlled through the second needle valve (631).

[0089] By adopting this embodiment, if an abnormality occurs between the second gas inlet (212) and the second gas flow controller (610) and the second gas inlet (212) fails to introduce gas normally, the second control valve (630) can be used to open the second gas exhaust pipe (620) so that the second gas can flow into the vacuum pump (300) through the second gas exhaust pipe (620). Thus, the pressure is prevented from becoming too high due to gas suppression.

[0090] In some embodiments, the semiconductor process chamber further includes a pressure detection element. The pressure detection element is installed within the chamber body (100) and is used to detect the atmospheric pressure within the chamber body (100). The pressure detection element may be a pressure sensor, but is not limited thereto, and the pressure detection element is connected to a pressure control valve (400). When the first gas inlet (211) is connected to a gas passage, the opening of the pressure control valve (400) is a first opening that corresponds to the pressure value detected by the pressure detection element, and the chamber body (100) maintains the first atmospheric pressure value. When the second gas inlet (212) is connected to a gas passage, the opening of the pressure control valve (400) is a second opening that corresponds to the pressure value detected by the pressure detection element, and the chamber body (100) maintains the second atmospheric pressure value. Here, the difference between the first atmospheric pressure value and the second atmospheric pressure value is within a predetermined pressure difference range.

[0091] For example, the pressure control range of the pressure control valve (400) is 30 mTorr to 200 mTorr, and the first pressure value may be 75 mTorr and the second pressure value may be 55 mTorr. The predetermined pressure difference range may be 10 mTorr to 30 mTorr. Since the difference between the first pressure value and the second pressure value is 20 mTorr, the difference between the two is within the predetermined pressure difference range. Of course, the first pressure value and the second pressure value may be different values, and the predetermined pressure difference range is set as necessary.

[0092] It should be noted that during the etching process, the higher the pressure of the chamber body (100), the faster the etching speed, and during the deposition process, the lower the pressure of the chamber body (100), the higher the deposition uniformity. In an ideal state, when the difference between the first pressure value and the second pressure value reaches 150 mTorr, the etching speed and production yield increase further.

[0093] By adopting this embodiment, the opening of the pressure control valve (400) is adjusted according to the air pressure of the chamber body (100) so that the chamber body (100) maintains a suitable air pressure value during the first process and the second process, respectively. This is advantageous for maintaining the pressure difference of the chamber body (100) within a suitable range during the first process and the second process, and furthermore, is advantageous for considering both process efficiency and process uniformity.

[0094] In some embodiments, the semiconductor process chamber further includes a controller. The controller includes at least one memory and at least one processor, and a computer program is stored in the memory. When the computer program is executed by the processor, a step of the semiconductor process method is implemented. The semiconductor process method includes the following steps.

[0095] When performing the first process step, the switching valve plate (220) is controlled to move to a first position so that the first gas is introduced into the chamber body (100) through the first gas inlet (211). When performing the second process step, the switching valve plate (220) is controlled to move to a second position so that the second gas is introduced into the chamber body (100) through the second gas inlet (212).

[0096] For example, the controller may be an upper computer or a lower computer. Here, the controller may directly control the switching valve plate (220) or control a driving member that drives the switching valve plate (220) to move. This causes the switching valve plate (220) to move to a first position or a second position, thereby injecting a corresponding process gas into the chamber body (100).

[0097] By adopting this embodiment, an automated switching process of the movement position of the switching valve plate (220) is implemented using a controller. This is advantageous for rapidly switching the movement position of the switching valve plate (220) and further enables rapid switching between the first process step and the second process step. Additionally, it further shortens the switching time between the first gas and the second gas and effectively prevents the problem of gas introduction delay in the chamber body (100). Furthermore, the pressure control process of the chamber body (100) in the first and second process steps is also performed more quickly and accurately, which is advantageous for improving process effectiveness.

[0098] In an additional embodiment, the first process step is an etching step and the first gas is an etching gas. The second process step is a deposition step and the second gas is a deposition gas. The semiconductor process method further includes a step of alternately performing the first process step and the second process step, that is, a step of alternately performing the etching step and the deposition step.

[0099] By adopting this embodiment, the controller controls the continuous switching between the first position and the second position of the switching valve plate (220), thereby enabling rapid switching between the etching step and the deposition step. In addition, during the process of alternately performing the etching step and the deposition step, the problem of gas introduction delay in each process step is effectively prevented, and the time required for the entire process is effectively shortened. This is advantageous for further enhancing the process effect, as the process of the chamber body (100) is carried out more quickly and accurately in each process step.

[0100] In the related technology, since a first gas or a second gas is injected into the chamber body (100) using a conduit, a delay occurs in the time when the first gas and the second gas flow into the chamber body (100). The pressure detection element also experiences a delay in detecting the pressure value of the chamber body (100), and furthermore, the operation of the pressure control valve (400) is also delayed. Since delays occur in both the gas introduction and pressure control processes, RF application is also delayed, thereby extending the time for each cycle of the entire Bosch process. Additionally, due to the delay problem, it is difficult to control the pressure difference of the chamber body (100) during the etching and deposition processes.

[0101] On the other hand, in an embodiment of the present application, the semiconductor process method includes a first process step and a second process step that are performed alternately. Specifically, the second process step includes a step of controlling the switching valve plate (220) to move to a second position and connecting the second gas inlet (212) to the chamber body (100) through a gas passage so that the second gas is introduced into the chamber body (100) through the second gas inlet (212). The first process step includes a step of controlling the switching valve plate (220) to move to a first position and connecting the first gas inlet (211) to the chamber body (100) through a gas passage so that the first gas is introduced into the chamber body (100) through the first gas inlet (211).

[0102] For example, the first process step is an etching step, and the second process step is a deposition step. The semiconductor process method is a Bosch process, which includes a plurality of cycle steps. Each cycle step includes the aforementioned deposition step and etching step, respectively. For example, the etching step includes a first etching step and a second etching step, as shown in FIG. 9.

[0103] The deposition step includes the following: the switching valve plate (220) is controlled to move to a second position, and the deposition gas is rapidly introduced into the chamber body (100). At the same time, a pressure detection element detects the atmospheric pressure value within the chamber body (100). The pressure control valve (400) adjusts its opening according to the detected atmospheric pressure value so that the chamber body (100) maintains the second atmospheric pressure value, after which the RF is turned on and maintained for a holding time t=0.2s. In this step, a fluorocarbon polymer layer is formed on the side of the wafer (111) cavity using a deposition gas such as Ar or C4F8. In order to prevent the fluorocarbon polymer layer from being formed on the bottom of the cavity, a relatively low RF frequency is generally adopted in this step.

[0104] The first etching step includes the following: the switching valve plate (220) is controlled to move to a first position, and the etching gas is rapidly introduced into the chamber body (100). At the same time, a pressure detection element detects the atmospheric pressure value within the chamber body (100). The pressure control valve (400) adjusts its opening according to the detected atmospheric pressure value so that the chamber body (100) maintains the first atmospheric pressure value, after which RF and low frequency are sequentially turned on and maintained for a holding time t=0.2s. Here, the difference between the first atmospheric pressure value and the second atmospheric pressure value is within a predetermined pressure difference range.

[0105] The second etching step includes the following: RF and low frequency are sequentially switched on and maintained for a holding time t=0.2s. In the etching step, plasma etching is typically performed using a gas such as Ar, O2, or SF6.

[0106] The number of cycles of the Bosch process can be set as needed, and when the cycle process of the set number of cycles is completed, one process is considered to be completed. In other words, the etching step and the deposition step are performed alternately, and when the etching step is finished, the etching gas must be discharged outside the chamber body (100) while the deposition gas must be injected at the same time. Likewise, when the deposition step is finished, the deposition gas must be discharged outside the chamber body (100) while the etching gas is injected at the same time to circulate sequentially.

[0107] FIG. 10 illustrates the timing diagram of four cycle processes. Here, the flow rate of the second gas controlled by the second gas flow controller (610) is 250 sccm, and the flow rate of the first gas controlled by the first gas flow controller (510) is 85 sccm. In the deposition step, the RF voltage of the upper RF is 2200 dBW, and in the etching step, the RF voltage of the upper RF is 2794 dBW to 2800 dBW. In the first etching step, the low-frequency RF voltage is 330 dBW to 336 dBW. In the deposition process, the atmospheric pressure of the chamber body (100) is 75 mTorr, and in the etching process, the atmospheric pressure of the chamber body (100) is 55 mTorr. In the process, the atmospheric pressure of the chamber body (100) exhibits a trapezoidal square wave waveform.

[0108] By adopting the aforementioned process flow, the movement of the switching valve plate (220) is directly utilized to control the inflow of the first gas or the second gas into the chamber body (100). This effectively prevents residual gas from the previous process from entering the chamber body and participating in the next process, and also prevents the two process gases from mixing and participating in the process. Additionally, there is basically no delay when the first gas and the second gas are introduced into the chamber body (100). Therefore, the pressure detection element can detect the atmospheric pressure value without delay, and at the same time, RF can be applied without delay. This effectively shortens the time required for the entire semiconductor process method and allows for easier control of the atmospheric pressure difference in the chamber body (100) between the first process step and the second process step. Furthermore, the control process of the semiconductor process method is simplified, and the recipe parameters of the semiconductor process method are reduced, thereby effectively lowering the difficulty of developing the semiconductor process method.

[0109] In some other embodiments of the present application, referring to FIGS. 12 and 13, the gas introduction assembly (200) includes a first gas introduction unit and a second gas introduction unit. The first gas introduction unit and the second gas introduction unit are alternately in communication with the gas discharge end of the gas introduction assembly (200).

[0110] The first gas introduction unit includes a first gas introduction pipe (281), a first gas exhaust pipe (283), and a first switching valve plate (223). The gas introduction end of the first gas introduction pipe (281) is a first gas inlet (211), and the first gas can be injected into the first gas introduction pipe (281). The gas inlet of the first gas exhaust pipe (283) and the gas outlet of the first gas introduction pipe (281) are installed in parallel, and the first switching valve plate (223) is rotatably installed at the gas inlet of the first gas exhaust pipe (283) and the gas outlet of the first gas introduction pipe (281). When the first switching valve plate (223) rotates to different positions, the gas inlet of the first gas exhaust pipe (283) or the gas outlet of the first gas introduction pipe (281) can be opened. In this way, the gas outlet of the first gas inlet pipe (281) and the gas inlet of the first gas exhaust pipe (283) are directly controlled by changing the rotational position of the first switching valve plate (223). Therefore, there is no need to control the first gas inlet pipe (281) and the first gas exhaust pipe (283) separately.

[0111] The second gas introduction unit includes a second gas introduction pipe (282), a second gas exhaust pipe (284), and a second switching valve plate (224). The gas introduction end of the second gas introduction pipe (282) is the second gas inlet port (212), and the second gas can be injected into the second gas introduction pipe (282). The gas inlet port of the second gas exhaust pipe (284) and the gas outlet port of the second gas introduction pipe (282) are installed in parallel, and the second switching valve plate (224) is rotatably installed at the gas inlet port of the second gas exhaust pipe (284) and the gas outlet port of the second gas introduction pipe (282). When the second switching valve plate (224) rotates to different positions, the gas inlet port of the second gas exhaust pipe (284) or the gas outlet port of the second gas introduction pipe (282) can be opened. In this way, the gas outlet of the second gas inlet pipe (282) and the gas inlet of the second gas exhaust pipe (284) are directly controlled by changing the rotational position of the second switching valve plate (224). Therefore, there is no need to control the second gas inlet pipe (282) and the second gas exhaust pipe (284) separately.

[0112] For example, the first switching valve plate (223) and the second switching valve plate (224) may each be connected to a driving source that provides rotational power, such as a motor or a pneumatic motor. This drives the first switching valve plate (223) or the second switching valve plate (224) to rotate using the driving source. In an additional embodiment, a linear driving member or driving source used to move the aforementioned switching valve plate (220) may be controlled by a controller. The controller controls the state of the two linear driving members or two driving sources so that the first gas introduction unit and the second gas introduction unit alternately introduce gas.

[0113] In this embodiment, the first gas introduction unit and the second gas introduction unit are alternately connected to the gas discharge end of the gas introduction assembly (200). When the first gas introduction unit is connected to the gas discharge end of the gas introduction assembly (200), the second switching valve plate (224) can be rotated to a position that opens the second gas exhaust pipe (284). By the second gas exhaust pipe (284) pumping the gas from the second gas introduction pipe (282) to discharge the process gas within the second gas introduction pipe (282), the residual process gas is prevented from flowing into the chamber body (100) and mixing with the process gas of the next process to be involved in the next process. Likewise, when the second gas introduction unit is connected to the gas discharge end of the gas introduction assembly (200), the first switching valve plate (223) can be rotated to a position that opens the first gas exhaust pipe (283). The first gas exhaust pipe (283) pumps the gas from the first gas inlet pipe (281) to discharge the process gas inside the first gas inlet pipe (281), thereby preventing the process gas remaining from the previous process from flowing into the chamber body (100) and mixing with the process gas of the next process to be involved in the next process. This is advantageous for improving process effectiveness.

[0114] For example, the first gas inlet tube (281) can inject etching gas, and the second gas inlet tube (282) can inject deposition gas. The two process processes are the etching process and the deposition process, respectively. In the Bosch etching process, switching between the etching process and the deposition process effectively prevents the formation of an uneven scallop structure on the sidewalls of the deep hole obtained by etching. This makes the sidewalls of the deep hole smoother and prevents the impact on subsequent processes, which is advantageous for improving process efficiency. Furthermore, it is advantageous for improving the yield of the device. Of course, the first gas inlet port (211) and the second gas inlet port (212) may each inject different types of process gases.

[0115] In some other embodiments, when the first gas introduction unit is in communication with the gas discharge end of the gas introduction assembly (200), the first switching valve plate (223) is positioned to block the gas introduction port of the first gas exhaust pipe (283). That is, the first gas exhaust pipe (283) cannot pump gas. By adopting this embodiment, blocking the first gas exhaust pipe (283) prevents the first gas exhaust pipe (283) from pumping gas within the chamber body (100), thereby preventing it from affecting the process.

[0116] For example, when the first gas introduction unit is connected to the gas discharge end of the gas introduction assembly (200), the first switching valve plate (223) is in a position to open the first gas introduction pipe (281), so that gas is introduced into the first gas introduction pipe (281). In this way, since the first gas exhaust pipe (283) is blocked, the first gas exhaust pipe (283) is also prevented from pumping gas within the first gas introduction pipe (281), thereby ensuring that the first process gas introduced into the first gas introduction pipe (281) flows smoothly into the chamber body (100).

[0117] Of course, in another embodiment, the gas outlet of the first gas exhaust pipe (283) is connected to the first gas pump. When the first gas introduction unit is in communication with the gas outlet of the gas introduction assembly (200), the first switching valve plate (223) is in a position to open the gas introduction port of the first gas exhaust pipe (283), and the first gas pump is in a non-operating state.

[0118] In an additional embodiment, when the first gas introduction unit is in communication with the gas discharge end of the gas introduction assembly (200), this means that the first gas introduction unit supplies process gas into the chamber body (100), and the second switching valve plate (224) is in a rotated state. For example, the rotational plane of the second switching valve plate (224) is parallel to the plane where the gas discharge port of the second gas introduction pipe (282) is located, and is also parallel to the plane where the gas introduction port of the second gas exhaust pipe (284) is located.

[0119] Specifically, when the second switching valve plate (224) is in a rotating state, that is, during the process of the second switching valve plate (224) rotating, the gas outlet of the second gas inlet pipe (282) and the gas inlet of the second gas exhaust pipe (284) both have three states: fully open, partially open, and fully closed. When the gas outlet of the second gas inlet pipe (282) is fully open, the gas inlet of the second gas exhaust pipe (284) is completely closed. When the gas outlet of the second gas inlet pipe (282) is partially open, the gas inlet of the second gas exhaust pipe (284) is also partially open, that is, partially closed. When the gas outlet of the second gas inlet pipe (282) is completely closed, the gas inlet of the second gas exhaust pipe (284) is fully open. The second switching valve plate (224) allows the gas outlet of the second gas inlet pipe (282) and the gas inlet of the second gas exhaust pipe (284) to be continuously switched between three states: fully open, partially open, and fully closed through rotation.

[0120] By adopting this embodiment, when the first gas introduction unit introduces gas, the second gas introduction pipe (282) is gradually opened and the second gas exhaust pipe (284) is gradually closed using the rotating second switching valve plate (224). Additionally, the second gas introduction pipe (282) is gradually closed and the second gas exhaust pipe (284) is gradually opened so that the second gas exhaust pipe (284) pumps the residual gas within the second gas introduction pipe (282). This prevents the residual gas within the second gas introduction pipe (282) from affecting the process. At the same time, since the second switching valve plate (224) is in a rotating state, the pipeline of the second gas introduction unit is prevented from being placed in a gas suppression state. Therefore, if the time of a single process step is relatively long, a situation in which the hardware is damaged due to a prolonged gas suppression state can be prevented.

[0121] For example, the gas inlet of the first gas exhaust pipe (283) and the gas outlet of the first gas inlet pipe (281) both have a semicircular structure, and these two are combined to form a circular structure. The first switching valve plate (223) has a semicircular structure and rotates around the axis of the circular structure. The gas inlet of the first gas exhaust pipe (283) and the gas outlet of the first gas inlet pipe (281) are installed in alignment. In this way, by adopting this structure, the gas inlet of the first gas exhaust pipe (283) can completely overlap with the gas inlet of the first gas exhaust pipe (283) during the rotation process of the first switching valve plate (223), thereby completely blocking the gas inlet of the first gas exhaust pipe (283). Alternatively, the first switching valve plate (223) can completely overlap with the gas outlet of the first gas inlet pipe (281), thereby completely blocking the gas outlet of the first gas inlet pipe (281). This is advantageous for simplifying the structure of the gas inlet assembly (200).

[0122] Of course, the gas inlet of the first gas exhaust pipe (283), the gas outlet of the first gas inlet pipe (281), and the first switching valve plate (223) may adopt other structures, such as a square structure.

[0123] In an additional embodiment, referring to FIG. 12, the first gas introduction unit further includes a third control valve (291) and a first pipe section (285b). The first pipe section (285b) faces the gas inlet of the first gas exhaust pipe (283) and the gas outlet of the first gas introduction pipe (281), and the third control valve (291) is installed in the first pipe section (285b). The third control valve (291) controls the conduction and blockage of the first pipe section (285b). In the direction of gas introduction of the first gas introduction pipe (281), the third control valve (291) is located downstream of the first switching valve plate (223). When the first gas introduction unit is in communication with the gas outlet of the gas introduction assembly (200), the third control valve (291) is in an open state to ensure that the first process gas can be smoothly injected into the chamber body (100). When the second gas introduction unit is connected to the gas discharge end of the gas introduction assembly (200), the third control valve (291) is in a closed state to prevent the second process gas and the first process gas from mixing and flowing into the chamber body (100) and affecting the process.

[0124] In some other embodiments, when the second gas introduction unit is in communication with the gas discharge end of the gas introduction assembly (200), the second switching valve plate (224) is positioned to block the gas introduction port of the second gas exhaust pipe (284). That is, the second gas exhaust pipe (284) cannot pump gas. By adopting this embodiment, by blocking the second gas exhaust pipe (284), the second gas exhaust pipe (284) is prevented from pumping gas within the chamber body (100), thereby preventing it from affecting the process.

[0125] For example, when the second gas introduction unit is connected to the gas discharge end of the gas introduction assembly (200), the second switching valve plate (224) is in a position to open the second gas introduction pipe (282), so that gas is introduced into the second gas introduction pipe (282). In this way, since the second gas exhaust pipe (284) is blocked, the second gas exhaust pipe (284) is also prevented from pumping gas within the second gas introduction pipe (282), thereby ensuring that the second process gas introduced into the second gas introduction pipe (282) flows smoothly into the chamber body (100).

[0126] Of course, in another embodiment, the gas outlet of the second gas exhaust pipe (284) is connected to the second gas pump. When the second gas introduction unit is in communication with the gas outlet of the gas introduction assembly (200), the second switching valve plate (224) is in a position to open the gas introduction port of the second gas exhaust pipe (284), and the second gas pump is in a non-operating state.

[0127] In an additional embodiment, when the second gas introduction unit is in communication with the gas discharge end of the gas introduction assembly (200), this means that the second gas introduction unit supplies process gas into the chamber body (100), and the first switching valve plate (223) is in a rotated state. For example, the rotational plane of the first switching valve plate (223) is parallel to the plane where the gas discharge port of the first gas introduction pipe (281) is located, and is also parallel to the plane where the gas introduction port of the first gas exhaust pipe (283) is located.

[0128] Specifically, referring to FIG. 13, when the first switching valve plate (223) is in a rotating state, that is, during the process of the first switching valve plate (223) rotating, the gas outlet of the first gas inlet pipe (281) and the gas inlet of the first gas exhaust pipe (283) both have three states: fully open, partially open, and fully closed. When the gas outlet of the first gas inlet pipe (281) is fully open, the gas inlet of the first gas exhaust pipe (283) is completely closed. When the gas outlet of the first gas inlet pipe (281) is partially open, the gas inlet of the first gas exhaust pipe (283) is also partially open, that is, partially closed. When the gas outlet of the first gas inlet pipe (281) is completely closed, the gas inlet of the first gas exhaust pipe (283) is fully open. The first switching valve plate (223) allows the gas outlet of the first gas inlet pipe (281) and the gas inlet of the first gas exhaust pipe (283) to be switched between three states of full opening, partial opening, and full closing through rotation.

[0129] By adopting this embodiment, when the second gas introduction unit introduces gas, the first gas introduction pipe (281) is gradually opened and the first gas exhaust pipe (283) is gradually closed using the first switching valve plate (223) that is rotating. Additionally, the first gas introduction pipe (281) is gradually closed and the first gas exhaust pipe (283) is gradually opened so that the first gas exhaust pipe (283) pumps the residual gas inside the first gas introduction pipe (281). This prevents the residual gas inside the first gas introduction pipe (281) from affecting the process. At the same time, since the first switching valve plate (223) is in a rotating state, the pipeline of the first gas introduction unit is prevented from being placed in a gas suppression state, and thus, in cases where the single process step time is relatively long, a situation in which the maintenance of the gas suppression state is prolonged and the hardware is damaged can be prevented.

[0130] For example, the gas inlet of the second gas exhaust pipe (284) and the gas outlet of the second gas inlet pipe (282) both have a semicircular structure, and these two are combined to form a circular structure. The second switching valve plate (224) has a semicircular structure and rotates around the axis of the circular structure. The gas inlet of the second gas exhaust pipe (284) and the gas outlet of the second gas inlet pipe (282) are installed in alignment. In this way, by adopting this structure, the gas inlet of the second gas exhaust pipe (284) can completely overlap with the gas inlet of the second gas exhaust pipe (284) during the rotation process of the second switching valve plate (224), thereby completely blocking the gas inlet of the second gas exhaust pipe (284). Alternatively, the second switching valve plate (224) can completely overlap with the gas outlet of the second gas inlet pipe (282), thereby completely blocking the gas outlet of the second gas inlet pipe (282). This is advantageous for simplifying the structure of the gas inlet assembly (200).

[0131] Of course, the gas inlet of the second gas exhaust pipe (284), the gas outlet of the second gas inlet pipe (282), and the second switching valve plate (224) may adopt other structures, such as a square structure.

[0132] In an additional embodiment, the second gas introduction unit further includes a fourth control valve (292) and a second pipe section (285c). The second pipe section (285c) faces the gas inlet of the second gas exhaust pipe (284) and the gas outlet of the second gas introduction pipe (282), and the fourth control valve (292) is installed in the second pipe section (285c). The fourth control valve (292) controls the conduction and blockage of the second pipe section (285c). In the direction of gas introduction of the second gas introduction pipe (282), the fourth control valve (292) is located downstream of the second switching valve plate (224). When the second gas introduction unit is in communication with the gas outlet of the gas introduction assembly (200), the fourth control valve (292) is in an open state to ensure that the second process gas can be smoothly injected into the chamber body. When the first gas introduction unit is connected to the gas discharge end of the gas introduction assembly (200), the fourth control valve (292) is in a closed state to prevent the first process gas and the second process gas from mixing and flowing into the chamber body (100) to affect the process.

[0133] For example, the gas introduction assembly (200) further includes a gas discharge pipe (285). The gas discharge pipe (285) includes a main pipe (285a), the aforementioned first pipe section (285b), and a second pipe section (285c). The first pipe section (285b) and the second pipe section (285c) are each connected to the main pipe (285a). In this way, the first gas flowing through the first gas introduction pipe (281) or the second gas flowing through the second gas introduction pipe (282) is discharged through the corresponding pipe section and the main pipe (285a).

[0134] To summarize the above, when the first process is initiated, the third control valve (291) is in an open state, and the first switching valve plate (223) conducts the first gas inlet pipe (281) and blocks the first gas exhaust pipe (283), and the first gas is introduced into the chamber body, for example, to perform an etching step. At the same time, the fourth control valve (292) is in a closed state, and the second switching valve plate (224) rotates to rapidly switch between the gas introduction process and the gas exhaust process, thereby preventing the pipeline of the second gas introduction unit from being placed in a gas suppression state. When the second process is initiated, the third control valve (291) is in a closed state, and the first switching valve plate (223) rotates to rapidly switch between the gas introduction process and the gas exhaust process, thereby preventing the pipeline of the first gas introduction unit from being placed in a gas suppression state. At the same time, the fourth control valve (292) is in an open state, and the second switching valve plate (224) conducts the second gas inlet pipe (282) and blocks the second gas exhaust pipe (284), and the second gas is introduced into the chamber body so that, for example, a deposition step is performed.

[0135] Based on the gas introduction assembly (200) of the above-described embodiment, the embodiment of the present application further discloses a semiconductor process chamber. Referring to FIG. 11, the semiconductor process chamber includes a chamber body (100) and the gas introduction assembly (200) of the above-described embodiment. A gas inlet port (101) is installed in the chamber body (100), and the gas introduction assembly (200) is installed in the gas inlet port (101). That is, the main conduit (285a) of the gas discharge pipe (285) is connected to the gas inlet port (101) of the chamber body (100). In this way, the semiconductor process chamber prevents process gas remaining from the previous process from flowing into the chamber body (100) through the gas introduction assembly (200), mixing with the process gas of the next process, and participating in the next process. This is advantageous for improving process efficiency.

[0136] Based on the gas introduction assembly (200) of the above-described embodiment, the embodiment of the present application further discloses a semiconductor process method. The semiconductor process method includes a first process step and a second process step.

[0137] First process step: The first gas introduction unit is controlled to communicate with the gas discharge end of the gas introduction assembly (200), so that the first switching valve plate (223) is positioned to block the gas introduction port of the first gas exhaust pipe (283) and the second switching valve plate (224) is in a rotated state. Specifically, at this time, the first switching valve plate (223) is also positioned to open the first gas introduction pipe (281), so that the first process gas is injected into the first gas introduction pipe (281), and the first process gas can be injected into the chamber body (100). Additionally, through the rotating second switching valve plate (224), the second gas exhaust pipe (284) can pump the residual gas of the second gas introduction unit.

[0138] Second process step: The second gas introduction unit is controlled to communicate with the gas discharge end of the gas introduction assembly (200), so that the second switching valve plate (224) is positioned to block the gas introduction port of the second gas exhaust pipe (284), and the first switching valve plate (223) is in a rotated state. Specifically, at this time, the second switching valve plate (224) is also positioned to open the second gas introduction pipe (282), so that the second process gas is injected into the second gas introduction pipe (282), and the second process gas can be injected into the chamber body (100). Additionally, through the rotating first switching valve plate (223), the first gas exhaust pipe (283) can pump the residual gas of the first gas introduction unit.

[0139] For example, the first process gas may be an etching gas, and the second process gas may be a deposition gas. The first process step is an etching step, and the second process step is a deposition step. The semiconductor process method is a Bosch process and includes a plurality of cycle steps, each of which includes the aforementioned deposition step and etching step, respectively.

[0140] By adopting the aforementioned semiconductor process method, gas exhaust using a gas exhaust pipe effectively prevents residual gas from the previous process from flowing into the chamber body (100) and participating in the next process. This prevents the two process gases from mixing and participating in the process, which is advantageous for improving process efficiency.

[0141] Although embodiments of the present application have been described together with the accompanying drawings, the present application is not limited to the specific embodiments described above. The specific embodiments described above are merely illustrative and not limiting. A person skilled in the art to which the present application pertains may create various forms based on the implications of the present application without departing from the scope of protection sought in the purpose and claims of the present application, and all such forms fall within the scope of protection of the present application. Explanation of the symbols

[0142] 100-Chamber body, 101-Gas inlet, 110-Base, 111-Wafer, 120-Lining, 200-Gas inlet assembly, 210-Gas inlet window, 211-First gas inlet, 212-Second gas inlet, 220-Switching valve plate, 221-First gas passage section, 222-Second gas passage section, 231-First blocking member, 232-Second blocking member, 241-First stop member, 242-Second stop member, 251-First fixing member, 252-Second fixing member, 260-Flow equalization plate, 261-Flow equalization groove, 262-Flow equalization hole, 271-First sealing member, 272-Second sealing member, 273-Third sealing member, 223-1st switching valve plate, 224-2nd switching valve plate, 281-1st gas inlet pipe, 282-2nd gas inlet pipe, 283-1st gas exhaust pipe, 284-2nd gas exhaust pipe, 285-gas discharge pipe, 285a-Main pipeline, 285b-1st pipe section, 285c-2nd pipe section, 291-3rd control valve, 292-4th control valve, 300-Vacuum pump, 310-Molecular pump, 320-Dry pump, 400-Pressure control valve, 410-Valve plate, 420-Acting member, 510-1st gas flow controller, 520-1st gas exhaust pipeline, 530-1st control valve, 531-1st needle valve, 532-1st pneumatic stop valve, 610-2nd gas flow controller, 620-2nd gas exhaust pipeline, 630-2nd control valve, 631-2nd needle valve, 632-2nd pneumatic stop valve.

Claims

Claim 1 A gas introduction assembly comprising a gas introduction window and a switching valve plate connected to each other, wherein a first gas introduction port and a second gas introduction port are installed in the gas introduction window, and the switching valve plate can move between a first position and a second position with respect to the gas introduction window, and the switching valve plate has a gas passage installed therein, and the gas passage is in communication with a gas discharge end of the gas introduction assembly, and when the switching valve plate is in the first position, the first gas introduction port is in communication with the gas passage and the second gas introduction port is blocked from the gas passage, and when the switching valve plate is in the second position, the second gas introduction port is in communication with the gas passage and the first gas introduction port is blocked from the gas passage. Claim 2 A gas introduction assembly according to claim 1, wherein the gas introduction assembly further comprises a blocking member, the blocking member is installed between the gas introduction window and the switching valve plate, the gas passage includes a first gas passage section and a second gas passage section, the outlet end of the first gas passage section and the outlet end of the second gas passage section are each in communication with the gas discharge end of the gas introduction assembly, and when the switching valve plate is positioned at the first position, the first gas introduction port is in communication with the inlet end of the first gas passage section and the blocking member blocks the inlet end of the second gas passage section, and when the switching valve plate is positioned at the second position, the second gas introduction port is in communication with the inlet end of the second gas passage section and the blocking member blocks the inlet end of the first gas passage section. Claim 3 A gas introduction assembly according to claim 2, wherein the quantity of the blocking members is at least two, and includes a first blocking member and a second blocking member, wherein the first blocking member is installed at the inlet end of the first gas passage section and the second blocking member is installed at the inlet end of the second gas passage section, and the blocking member has an elastic structure, and when the switching valve plate is located at the first position, the first blocking member is in an elastic deformation state so that the first gas inlet port and the inlet end of the first gas passage section are in communication, and the second blocking member blocks the inlet end of the second gas passage section, and when the switching valve plate is located at the second position, the second blocking member is in an elastic deformation state so that the second gas inlet port and the inlet end of the second gas passage section are in communication, and the first blocking member blocks the inlet end of the first gas passage section. Claim 4 In paragraph 3, the gas introduction assembly further comprises a first stop member and a first fixing member, wherein the first stop member and the first fixing member are each located on both sides of the first blocking member, the first stop member is connected to the gas introduction window, and the first fixing member is connected to the switching valve plate, and in the process of the switching valve plate switching from the second position to the first position, the first stop member and the first fixing member compress the first blocking member to cause elastic deformation in the first blocking member; and / or the gas introduction assembly further comprises a second stop member and a second fixing member, wherein the second stop member and the second fixing member are each located on both sides of the second blocking member, the second stop member is connected to the gas introduction window, and the second fixing member is connected to the switching valve plate, and wherein, during the process of switching the switching valve plate from the first position to the second position, the second stop member and the second fixing member compress the second blocking member to cause elastic deformation in the second blocking member. Claim 5 A gas introduction assembly according to claim 1, wherein the first gas inlet and the second gas inlet are installed in pairs, and a plurality of pairs of the first gas inlet and the second gas inlet are spaced apart in the circumferential direction of the gas introduction window, and a plurality of gas passages are spaced apart, and each of the gas passages corresponds to each pair of the first gas inlet and the second gas inlet. Claim 6 A gas introduction assembly according to claim 1, wherein the gas introduction assembly further comprises a first sealing member, the first sealing member is installed between the gas introduction window and the switching valve plate, and the first sealing member is located between the second gas introduction port and the first gas introduction port to isolate the second gas introduction port and the first gas introduction port; and / or the gas introduction assembly further comprises a second sealing member, the second sealing member is installed between the gas introduction window and the switching valve plate to seal a gap between the gas introduction window and the switching valve plate. Claim 7 A gas introduction assembly according to any one of claims 1 to 6, wherein the gas introduction assembly further comprises a flow equalization plate, wherein the flow equalization plate is located on one side facing away from the gas introduction window of the switching valve plate, wherein a plurality of flow equalization holes are installed in the flow equalization plate, and wherein the gas passage communicates with the gas discharge end of the gas introduction assembly through each of the flow equalization holes. Claim 8 A gas introduction assembly according to claim 7, wherein the flow equalization plate further has a flow equalization groove installed therein, the flow equalization groove and the switching valve plate form a flow equalization space, and the flow equalization groove connects a plurality of the flow equalization holes with the gas passage. Claim 9 A gas introduction assembly according to claim 7, wherein the gas introduction assembly further comprises a third sealing member, and the third sealing member is installed between the flow equalization plate and the switching valve plate to seal the gap between the flow equalization plate and the switching valve plate. Claim 10 A gas introduction assembly comprising a first gas introduction unit and a second gas introduction unit, wherein the first gas introduction unit comprises a first gas introduction pipe, a first gas exhaust pipe, and a first switching valve plate, wherein the gas inlet of the first gas exhaust pipe and the gas outlet of the first gas introduction pipe are installed in parallel, and the first switching valve plate is rotatably installed at the gas inlet of the first gas exhaust pipe and the gas outlet of the first gas introduction pipe, and the second gas introduction unit comprises a second gas introduction pipe, a second gas exhaust pipe, and a second switching valve plate, wherein the gas inlet of the second gas exhaust pipe and the gas outlet of the second gas introduction pipe are installed in parallel, and the second switching valve plate is rotatably installed at the gas inlet of the second gas exhaust pipe and the gas outlet of the second gas introduction pipe, and wherein the first gas introduction unit and the second gas introduction unit are alternately connected to the gas outlet of the gas introduction assembly. Claim 11 A gas introduction assembly according to claim 10, wherein when the first gas introduction unit is in communication with the gas discharge end of the gas introduction assembly, the first switching valve plate is in a position to block the gas introduction port of the first gas exhaust pipe, and when the second gas introduction unit is in communication with the gas discharge end of the gas introduction assembly, the second switching valve plate is in a position to block the gas introduction port of the second gas exhaust pipe. Claim 12 A gas introduction assembly according to claim 11, characterized in that when the first gas introduction unit is in communication with the gas discharge end of the gas introduction assembly, the second switching valve plate is in a rotated state, and when the second gas introduction unit is in communication with the gas discharge end of the gas introduction assembly, the first switching valve plate is in a rotated state. Claim 13 A gas introduction assembly according to claim 10, wherein the gas inlet of the first gas exhaust pipe and the gas outlet of the first gas inlet pipe are both semicircular structures and the two are combined to form a circular structure, and the first switching valve plate is a semicircular structure; and / or the gas inlet of the second gas exhaust pipe and the gas outlet of the second gas inlet pipe are both semicircular structures and the two are combined to form a circular structure, and the second switching valve plate is a semicircular structure. Claim 14 A gas introduction assembly according to claim 10, wherein the first gas introduction unit further comprises a third control valve and a first pipe section, wherein the first pipe section faces the gas inlet of the first gas exhaust pipe and the gas outlet of the first gas introduction pipe, and the third control valve is installed in the first pipe section, and when the first gas introduction unit communicates with the gas outlet of the gas introduction assembly, the third control valve is in an open state; and / or the second gas introduction unit further comprises a fourth control valve and a second pipe section, wherein the second pipe section faces the gas inlet of the second gas exhaust pipe and the gas outlet of the second gas introduction pipe, and the fourth control valve is installed in the second pipe section, and when the second gas introduction unit communicates with the gas outlet of the gas introduction assembly, the fourth control valve is in an open state. Claim 15 A semiconductor process chamber comprising a chamber body and a gas introduction assembly according to any one of claims 1 to 14, wherein the gas discharge end of the gas introduction assembly is in communication with the chamber body. Claim 16 A semiconductor process chamber according to claim 15, wherein the chamber body is provided with an exhaust port, the semiconductor process chamber further comprises a pressure control valve, and the pressure control valve is installed in the exhaust port to control the opening of the exhaust port. Claim 17 A semiconductor process chamber according to claim 16, wherein the pressure control valve comprises at least two valve plates and a driving member, each of which is rotatably installed in the exhaust port to open or close the exhaust port, and the driving member is connected to each of which is a valve plate, and the driving member is capable of driving each of which is a valve plate to rotate simultaneously to increase or decrease the opening of the exhaust port. Claim 18 A semiconductor process method applied to a gas introduction assembly according to any one of claims 1 to 9, comprising: a first process step of controlling a switching valve plate to move to a first position so that a first gas is introduced into a chamber body through a first gas introduction port; a second process step of controlling the switching valve plate to move to a second position so that a second gas is introduced into the chamber body through a second gas introduction port; and a step of alternately performing the first process step and the second process step. Claim 19 A semiconductor process method applied to a gas introduction assembly according to any one of claims 10 to 14, comprising: a first process step of controlling the first gas introduction unit to communicate with the gas discharge end of the gas introduction assembly so that the first switching valve plate is positioned to block the gas introduction port of the first gas exhaust pipe and the second switching valve plate is in a rotated state; and a second process step of controlling the second gas introduction unit to communicate with the gas discharge end of the gas introduction assembly so that the second switching valve plate is positioned to block the gas introduction port of the second gas exhaust pipe and the first switching valve plate is in a rotated state.

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