Dielectric deposition ring with pins for physical vapor deposition

Abstract

Methods and apparatus for processing a substrate are provided herein. In some embodiments, a process kit for a substrate support comprises: a dielectric plate having a lower surface configured to cover a supporting surface of the substrate support and an upper surface configured to support the substrate; and a dielectric deposition ring configured to surround the dielectric plate and cover a portion of the substrate support disposed radially outward from the supporting surface.

Description

Technology Field

[0001] The embodiments of the present disclosure generally relate to semiconductor processing apparatus and processing. Background Technology

[0002] The inventors observed arcing defects in some high-power physical vapor deposition (PVD) processes for depositing metal on warped substrates. Specifically, the inventors observed that warped substrates have arcing defects when substrate edges create a gap between the substrate and a grounded substrate support. The gap allows for metal deposition on the substrate support and induces arcing when the substrate is short-circuited with the substrate support.

[0003] Accordingly, the inventors provide embodiments of improved apparatus and techniques for processing a substrate.

[0004] Methods and apparatus for processing a substrate are provided herein. In some embodiments, a process kit for a substrate support comprises: a dielectric plate having a lower surface configured to cover a supporting surface of the substrate support and an upper surface configured to support the substrate; and a dielectric deposition ring configured to surround the dielectric plate and cover a portion of the substrate support disposed radially outward from the supporting surface.

[0005] In some embodiments, an apparatus for processing a substrate comprises: a substrate support having a support surface and an outer ridge disposed outside the support surface — the support surface is elevated above the outer ridge —; and a process kit disposed on top of the substrate support. The process kit may comprise: a dielectric plate having a lower surface covering the support surface and an upper surface configured to support the substrate; and a dielectric deposition ring surrounding the dielectric plate and covering the outer ridge.

[0006] In some embodiments, the physical vapor deposition chamber comprises: a chamber body; a cover assembly coupled to the chamber body and configured to support one or more targets for depositing one or more materials on a substrate during use; a substrate support disposed within the chamber body opposite to the cover assembly—the substrate support has a support surface and an outer ridge disposed outside the support surface, the support surface being elevated above the outer ridge—; and a process kit disposed on top of the substrate support, wherein the process kit comprises: a dielectric plate having a lower surface covering the support surface and an upper surface configured to support the substrate; and a dielectric deposition ring surrounding the dielectric plate and covering the outer ridge.

[0007] Other and additional embodiments of the present disclosure are described below. Brief explanation of the drawing

[0008] The embodiments of the present disclosure, briefly summarized above and discussed in more detail below, may be understood by referring to the exemplary embodiments of the present disclosure depicted in the accompanying drawings. However, the accompanying drawings are merely illustrative of typical embodiments of the present disclosure and should not be construed as limiting the scope, as the present disclosure may allow for other equally valid embodiments. FIG. 1 is a schematic diagram of a physical vapor deposition system having a process kit according to embodiments of the present disclosure. FIG. 2 is a schematic side view of a part of a process kit and a substrate support according to embodiments of the present disclosure. FIG. 3 is a schematic side view of a part of a process kit and a substrate support according to embodiments of the present disclosure. FIG. 4 is a schematic side view of a part of a process kit and a substrate support according to embodiments of the present disclosure. FIG. 5 is a schematic side view of a part of a process kit and a substrate support according to embodiments of the present disclosure. FIG. 6 is a schematic side view of a part of a process kit and a substrate support according to embodiments of the present disclosure. FIG. 7 is a schematic side view of a part of a process kit and a substrate support according to embodiments of the present disclosure. For ease of understanding, the same reference numbers have been used where possible to designate identical elements common to the drawings. The drawings are not drawn to actual scale and may be simplified for clarity. The elements and features of one embodiment may be beneficially incorporated into other embodiments without further description. Specific details for implementing the invention

[0009] Examples of methods and apparatus for processing a substrate are provided in this specification.

[0010] FIG. 1 is a side cross-sectional view of a PVD chamber (100) that can be used in the substrate processing system of FIG. 1 according to specific embodiments. In some embodiments, the PVD chamber (100) may be a deposition chamber that is part of a multi-chamber substrate processing system. In some embodiments, the PVD chamber (100) may be a standalone deposition chamber. Although specific details of the PVD chamber are described in relation to FIG. 1, other PVD chambers may also be suitably modified in accordance with the teachings disclosed herein.

[0011] Generally, a PVD chamber (100) comprises a chamber body (102), a cover assembly (104) coupled to the chamber body (102), a magnetron (108) coupled to the cover assembly (104), a substrate support (110) disposed within the chamber body (102), and one or more targets (112) disposed between the magnetron (108) and the substrate support (110). Although one target (112) is illustrated in FIG. 1, a plurality of targets (112) may be provided in the PVD chamber (100). For example, other embodiments of PVD chambers suitable for modification according to the teachings disclosed herein are described in the jointly owned U.S. Patent Application Publication No. 2023 / 0130947 A1, disclosed on April 27, 2023, under the title “Tilted PVD Source with Rotating Pedestal”.

[0012] During processing, the interior of the PVD chamber (100) or the processing area (118) is maintained under vacuum pressure. Generally, the processing area (118) is defined by the chamber body (102) and the cover assembly (104) such that the processing area (118) is primarily positioned between the substrate support surface of the substrate support (110) and the target (112).

[0013] A power source (106) is electrically connected to the target (112) to apply a negatively biased voltage to the target (112). In certain embodiments, the power source (106) is a straight DC mode source or a pulsed DC mode source. However, other types of power sources, such as radio frequency (RF) sources, are also considered.

[0014] The target (112) comprises a target material and a backing plate and is part of the cover assembly (104). The front surface of the target material of the target (112) defines part of the processing area (118). The backing plate is positioned between the target material of the target (112) and the magnetron (108). The backing plate is electrically insulated from the support plate (113) of the cover assembly (104) by the use of an electrical insulator to prevent an electrical short circuit from being created between the support plate (113) of the grounded cover assembly (104) and the backing plate. In some embodiments, the backing plate may have one or more cooling channels, and the one or more cooling channels are configured to receive a coolant (e.g., DI water) through them to cool or control the temperature of the target (112).

[0015] A magnetron (108) is positioned over a portion of the target (112) and in an area of ​​the cover assembly (104) maintained at atmospheric pressure. The magnetron (108) includes a plurality of magnets (111) attached to a shunt plate (109). The magnetron is used to confine a plasma near the target (112) to facilitate the sputtering of material from the target (112) to be deposited on a substrate placed on a substrate support (110) during processing.

[0016] The substrate support (110) has a support surface (114) for supporting a substrate (116). In some embodiments, the substrate support (110) may be configured to support the substrate by gravity, for example, the substrate support does not include a vacuum chuck or an electrostatic chuck. In some embodiments, the support surface (114) of the substrate support is conductive and is made of, for example, metal.

[0017] A process kit (124), described in more detail below, is placed on a support surface (114) and is used to support a substrate (116) and protect a substrate support (110) during processing. In some embodiments, the process kit (124) operates mechanically. For example, the weight of the process kit (124) may hold the process kit (124) in place on the substrate support. In some embodiments, the process kit (124) may be lifted by pins movable relative to the substrate support (110) to contact the lower surface of the process kit (124).

[0018] The temperature of the substrate (116) can be controlled using a temperature control system (132). In certain embodiments, the temperature control system (132) has an external cooling source that supplies a coolant to the substrate support (110). In some embodiments, an RF bias source (134) is electrically coupled to the substrate support (110) to bias the substrate (116) during the sputtering process. Alternatively, the substrate support (110) may be grounded, floated, or biased only by a DC or RF voltage source. Biasing the substrate (116) can improve one or more of film density, adhesion, step coverage, and / or material reactivity on the substrate surface.

[0019] A shaft (121) is coupled to the lower surface of a substrate support (110). A rotary union (119) is coupled to the lower end of the shaft (121) to provide rotary fluid coupling with a temperature control system (132) and rotary electric coupling with an RF bias source (134). The rotary union (119) includes a magnetic liquid rotary seal mechanism (also referred to as a "Ferrofluidic® seal") for vacuum rotary feedthrough.

[0020] In some embodiments, the substrate (116) is a panel. In some embodiments, the support surface (114) of the substrate support (110) is fitted to a single square or rectangular panel substrate having sides of about 500 mm or more, such as 510 mm x 515 mm or 600 mm x 600 mm. However, the apparatus and methods of the present disclosure may be implemented with a number of different types and sizes of substrates, including rectangular panels or circular wafers having different dimensions.

[0021] In some embodiments, the substrate support (110) is rotatable about an axis (e.g., a vertical axis) perpendicular to at least a portion of the support surface (114) of the substrate support (110). In some embodiments, a motor (131) is provided to drive the rotation of the substrate support (110) continuously relative to the target (112) to improve film uniformity. A separate motor (115), e.g., an electric linear actuator, is provided to raise and lower the substrate support (110). A bellows (117) surrounds the shaft (121) and forms a seal between the chamber body (102) and the motor (131) during the raising and lowering of the substrate support (110).

[0022] The lower surface of the target (112), defined by the surface of the target material, faces the support surface (114) of the substrate support (110) and the front surface of the substrate (116). In some embodiments, the target material of the target (112) is formed of a metal for sputtering a corresponding film composition on the substrate (116). In one example, the target material may comprise a pure material or an alloy containing an element selected from the group of copper (Cu), molybdenum (Mo), nickel (Ni), titanium (Ti), tantalum (Ta), aluminum (Al), cobalt (Co), gold (Au), silver (Ag), manganese (Mn), and silicon (Si). As examples, the materials deposited on the substrate (116) may include pure metals, doped metals, metal alloys, metal nitrides, metal oxides, metal carbides, as well as silicon-containing oxides, nitrides, or carbides containing these elements.

[0023] The inventors discovered that during processing, the substrate sometimes bends and does not lie flat on the substrate support. In these situations, the inventors further discovered that metal from the deposition process is deposited and accumulates on the back surface of the substrate and / or on the substrate support surface, which can cause arcing when the substrate is shorted to the substrate support. Additionally, the inventors observed that the edges of the substrate need to be sufficiently spaced away from sharp edges to prevent the occurrence of bipolar arcing. Although electrostatic chucks or clamps may be used in other applications with bent substrates, the inventors observed that these solutions cannot be used in certain applications, such as high-power (e.g., over about 10 kWh) PVD deposition of metal materials on substrates with through-vias, or in other configurations where metal materials can be deposited directly onto the substrate support, such as through open vias.

[0024] Typically, the back surface of the substrate is in direct contact with the support surface (114) of the substrate support (110). For example, the entire back surface of the substrate may be in electrical and thermal contact with the support surface of the substrate support, which may be made of metal. Accordingly, the inventors advantageously provide substrate supports and process kits as described above that reduce or overcome the problems described above.

[0025] Although described in some exemplary embodiments of FIGS. 2 through 7, various embodiments shown in any one figure may be used or combined in connection with embodiments described in any of the other figures. In one exemplary example, FIG. 2 depicts a schematic side view of a process kit and a portion of a substrate support according to embodiments of the present disclosure. The substrate support (110) includes a support surface (202) (e.g., the support surface (114) of FIG. 1) and an outer ridge (204) positioned outside the support surface (202). The support surface (202) is elevated relative to the outer ridge (204). The support surface (202) has dimensions smaller than the given dimensions of the substrate (116) to be supported, and accordingly, the outer edge (212) of the substrate (116) extends beyond the outer edge of the support surface (202). The support surface is substantially flat and can be held horizontal by a shaft (121) (e.g., see FIG. 1). Additionally, the outer ridge (204) is substantially flat and can be positioned parallel to the support surface (202). A side wall extends between the support surface (202) and the outer ridge (204). The side wall can be substantially perpendicular to the support surface (202) and the outer ridge (204) (e.g., vertical). In some embodiments, the support surface (202) and the outer ridge (204) may be made of metal to facilitate thermal control and grounding of the substrate (116) during processing.

[0026] The process kit (124) includes a dielectric plate (206) and a dielectric deposition ring (208). The dielectric plate (206) and the dielectric deposition ring (208) may be entirely fabricated from a process-compatible dielectric material, or at least coated with such material along their top surface or on surfaces exposed to all of their process volume (e.g., top surface and sidewalls). Fabricating the dielectric plate (206) and the dielectric deposition ring (208) entirely from a dielectric material or coating the dielectric plate (206) and the dielectric deposition ring (208) with a dielectric material is advantageous in that it reduces the risk of short-circuiting the substrate (116) to the substrate support (110) when depositing metal materials on the substrate (116). Additionally, the process kit (124) facilitates deposition on curved substrates without the use of edge clamps to flatten the substrate, and accordingly, advantageously facilitates edge-to-edge deposition on the substrate as well as deposition along the outer edge of the substrate, which is desirable in certain applications, for example, for preventing delamination of the deposited metal layer. The inventors have further observed that deposition uniformity near the edges on curved substrates is also improved using the apparatus disclosed herein. Furthermore, by limiting or preventing material deposition on the substrate support (110), the apparatus of the present disclosure extends tool uptime by extending the processing time before preventive maintenance to replace the process kit is required, which is more advantageous.

[0027] The dielectric plate (206) has a shape corresponding to the shape of the support surface (202) of the substrate support (e.g., the dielectric plate may be circular with respect to a circular support surface, rectangular with respect to a rectangular support surface, etc.). The dielectric plate (206) has a lower surface configured to cover the support surface (202) of the substrate support (110) and an upper surface configured to support the substrate (116). For example, the lower surface of the dielectric plate (206) has dimensions substantially similar to the dimensions of the support surface (202) of the substrate support (110). In some embodiments, the upper surface of the dielectric plate (206) has dimensions substantially similar to the dimensions of the support surface (202) of the substrate support (110). In some embodiments, the dielectric plate (206) does not have through holes. In some embodiments, the dielectric plate (206) has only through holes configured to allow lift pins from the substrate support (110) to pass through in order to facilitate the raising and lowering of the substrate (116) relative to the upper surface of the dielectric plate (206).

[0028] The dielectric deposition ring (208) has a central opening sized such that the dielectric deposition ring (208) surrounds the dielectric plate (206). As used herein, the term "ring" is intended to include circular and non-circular (e.g., polygonal) shapes surrounding the dielectric plate (206). For example, the shape of the central opening may be the same as the shape of the dielectric plate (206). The dielectric deposition ring (208) is configured to cover a portion (e.g., outer ridge (204)) of the substrate support (110) positioned radially outward from the support surface (202).

[0029] The dielectric deposition ring (208) includes one or more fins (210) (multiple fins (210) exemplarily illustrated in FIGS. 2 through 7) extending from the upper surface of the dielectric deposition ring (208). One or more fins (210) advantageously increase the amount of material that can be captured by the dielectric deposition ring (208) before preventive maintenance is required to replace and clean the dielectric deposition ring (208). Among the one or more fins (210), the innermost fin (214) may be positioned along the edge of the central opening of the dielectric deposition ring (208). In some embodiments, the innermost fin (214) of the one or more fins (210) extends to a height above the upper surface of the dielectric plate (206). The innermost fin (214) extending above the upper surface of the dielectric plate (206) advantageously limits or prevents the deposition of material on the upper surface of the dielectric plate (206) during processing.

[0030] In embodiments having a plurality of pins (210) including any of the embodiments described herein, individual pins among the plurality of pins (210) may be uniformly spaced apart or may not be uniformly spaced apart. Additionally, each pin among the plurality of pins (210) may have an independent geometry compared to other pins among the plurality of pins (210). For example, each pin may have one or more lengths, widths, spacings, or angles independent of any other pin among the plurality of pins (210). Thus, in some embodiments, at least one pin among the plurality of pins has at least one height or width different from other pins among the plurality of pins. In some embodiments, each pin among the plurality of pins moves radially outward from the innermost pin (214) to have a progressively lower height to each successive pin. In some embodiments, advantageously to avoid arcing during processing, when the substrate (116) is placed on top of the process kit (124), the lengths of the pins are selected to be at least a predetermined distance from the outer edge (212) of the substrate (116). For example, in some embodiments, a distance of about 5 mm or more exists between any pin and the outer edge (212), but other distances may be used depending on the processing conditions.

[0031] In some embodiments comprising any of the embodiments described herein, each of the one or more pins (210) may be positioned parallel to the vertical center axis of the process kit (124) which extends normal to the dielectric deposition ring (208) (e.g., perpendicular to the general plane of the dielectric deposition ring (208)). In some embodiments comprising any of the embodiments described herein, and as depicted in FIG. 3, each of the one or more pins (210) may be positioned not parallel to the vertical center axis. In some embodiments comprising any of the embodiments described herein, at least one of the one or more pins (210) is positioned not parallel to the vertical center axis of the process kit. In some embodiments having a plurality of pins (210) comprising any of the embodiments described herein, each of the plurality of pins (210) may be positioned at the same angle (e.g., parallel to each other). In some embodiments having a plurality of pins (210) including any of the embodiments described in this specification, at least one pin among the plurality of pins (210) may be positioned at an angle different from that of at least one other pin among the plurality of pins (210) (e.g., not parallel to each other).

[0032] The inner sidewall of the dielectric deposition ring (208) defines the central opening of the dielectric deposition ring (208). In some embodiments, the innermost pin (214) among the plurality of pins (210) forms at least partially the inner sidewall (e.g., see FIGS. 2 to 5). Generally, the central opening of the dielectric deposition ring (208) is sized to be nearly identical to the outer periphery of the dielectric plate (206). This configuration advantageously reduces the risk of deposition within any gap existing between the dielectric deposition ring (208) and the dielectric plate (206).

[0033] In some embodiments, a recess is positioned along the edges of the process kit (124) adjacent to separate components of the substrate support (110) or the process kit (124) so ​​as to reduce or prevent the formation of a continuous layer of material deposition across adjacent components. For example, as depicted in FIGS. 2 through 4, in some embodiments, a recess (216) may be positioned along the lower outer edge of the dielectric plate (206) (e.g., on the lower surface of the dielectric plate (206) adjacent to the support surface (202) of the substrate support (110). Alternatively or in combination, and as depicted in FIGS. 2 through 4, a recess (218) may be positioned along the lower inner edge of the dielectric deposition ring (208) (e.g., on the lower surface of the dielectric deposition ring (208) adjacent to the outer edge (204) of the substrate support (110). In some embodiments and as depicted in FIG. 4, a similar depression (402) may be formed along the outer lower edge of the dielectric deposition ring (208). The depression (402) may advantageously reduce or prevent the formation of a continuous layer of material deposition from the dielectric deposition ring (208) to the substrate support (110).

[0034] In some embodiments and as depicted in FIG. 5, the dielectric deposition ring (208) and the dielectric plate (206) may be configured to overlap to further reduce any gaps and / or provide a more convoluted path (e.g., no line of sight) between the dielectric deposition ring (208) and the dielectric plate (206). The overlap and convoluted path between the dielectric deposition ring (208) and the dielectric plate (206) further reduce the risk of deposition on the substrate support (110) at the location between the dielectric deposition ring (208) and the dielectric plate (206). For example, as shown in FIG. 5, the dielectric plate (206) further includes an outer wall (502) extending downward from the lower surface, and a ridge (504) extending outward from the lower portion of the outer wall (502). The dielectric deposition ring (208) further includes a recess (506) positioned along the lower inner edge of the dielectric deposition ring (208). The reg (504) is positioned at least partially within the recess (506). Among the plurality of pins (210), the innermost pin (214) may be positioned to be in contact with the outer wall (502), or, as shown in FIG. 5, a gap may exist between the innermost pin (214) and the outer wall (502). Although not shown in FIG. 5, the recess (224) may be positioned along the lower outer edge of the dielectric deposition ring (208).

[0035] In some embodiments and as depicted in FIG. 6, the dielectric deposition ring (208) and the dielectric plate (206) may be fabricated as an integral or single component (e.g., fabricated as a single piece of material, or fabricated as separate pieces bonded together or otherwise coupled to eliminate any gaps between the dielectric deposition ring (208) and the dielectric plate (206)). This integral configuration eliminates the risk of deposition on the substrate support (110) at a location between the dielectric deposition ring (208) and the dielectric plate (206).

[0036] In some embodiments and as depicted in FIGS. 2, FIGS. 3, FIGS. 6 and FIGS. 7, the process kit (124) may further include a shadow clamp (220) configured to be placed on top of the dielectric deposition ring (208). The shadow clamp (220) secures the dielectric deposition ring (208) (or an integral dielectric deposition ring (208) and dielectric plate (206)) to the substrate support (110) by gravity, advantageously without requiring bolts or clamps. The shadow clamp (220) more advantageously limits or prevents material deposition on the dielectric deposition ring (208) (or a combination of the dielectric plate (206) and the dielectric deposition ring (208)) from accumulating along the outer edge of the dielectric deposition ring (208) and shorting to the lower substrate support (110). The shadow clamp (220) has a central opening larger than the inner portion of the dielectric plate (206) and the dielectric deposition ring (208). The shadow clamp (220) has a lower surface configured to rest on the outer portion of the dielectric deposition ring (208). In some embodiments, the shadow clamp (220) has a width such that the outer edge of the shadow clamp (220) extends beyond the outer edge of the dielectric deposition ring (208). In some embodiments, the shadow clamp (220) includes a recess (222) positioned along the lower inner edge of the shadow clamp (220). In some embodiments, the shadow clamp (220) further includes a recess (224) positioned along the lower outer edge of the shadow clamp (220) between the shadow clamp (220) and the dielectric deposition ring (208). Although not shown in FIG. 5, a shadow clamp (220) may also be provided in these embodiments.

[0037] In some embodiments and as depicted in FIGS. 2, 3 and 6, the radially inner upper edge (226) of the shadow clamp (220) may be rounded to reduce or prevent any arcing during processing that may occur if a more sharp edge is provided. In some embodiments including any of the embodiments disclosed herein and as illustrated exemplarily in FIG. 7, the shadow clamp (220) may include an inwardly extending lip (702). The inwardly extending lip (702) may define the innermost diameter or dimension of the shadow clamp (220) to be smaller than the corresponding diameter or dimension of the substrate (116). Generally, the inwardly extending lip (702) is sufficiently spaced from the outer edge (212) of the substrate (116) to minimize or prevent arcing during processing (e.g., when placed on top and measured by the shortest straight distance between any edge of the inwardly extending lip (702) and the outer edge (212) of the substrate (116)). The inwardly extending lip (702) may also include a rounded innermost edge (704) to reduce or prevent arcing during processing. Generally, the configuration of the shadow clamp (220) for the substrate (116) and the dielectric deposition ring (208) may be selected to minimize material accumulation on the dielectric deposition ring (208).

[0038] The process kit (124) is configured to completely or substantially completely cover at least the upper surfaces of the substrate support (110) (e.g., support surface (202) and outer reg (204)). In some embodiments, the dielectric plate (206) and the dielectric deposition ring (208) together completely or substantially completely cover at least the upper surfaces of the substrate support (110). In some embodiments, the dielectric plate (206), the dielectric deposition ring (208), and the shadow clamp together completely or substantially completely cover at least the upper surfaces of the substrate support (110).

[0039] In some embodiments, the upper surfaces of one or both of the dielectric deposition ring (208) or the shadow clamp (220) may be textured to increase surface roughness to improve the adhesion of materials to the dielectric deposition ring (208) and / or the shadow clamp (220). The selected surface roughness may be achieved by suitable texturing or coating techniques such as bead blasting, plasma spray coating, or similar methods.

[0040] Although the foregoing relates to embodiments of the present disclosure, other and additional embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure.

Claims

Claim 1 A process kit for a substrate support, comprising: a dielectric plate having a lower surface configured to cover a support surface of the substrate support and an upper surface configured to support a substrate; and a dielectric deposition ring surrounding the dielectric plate and configured to cover a portion of the substrate support disposed radially outward from the support surface. Claim 2 A process kit according to claim 1, wherein the dielectric deposition ring further comprises a plurality of fins extending from the upper surface of the dielectric deposition ring. Claim 3 In paragraph 2, the innermost pin among the plurality of pins extends to a height above the upper surface of the dielectric plate, a process kit. Claim 4 In paragraph 2, a process kit wherein at least one of the plurality of pins has at least one height or width different from that of the other pins among the plurality of pins. Claim 5 In paragraph 2, a process kit in which, in a direction of radial outward movement, each of the plurality of pins has a continuously lower height. Claim 6 In paragraph 2, a process kit in which the pins among the plurality of pins are not uniformly spaced apart. Claim 7 In paragraph 2, a process kit wherein at least one of the plurality of pins is positioned not parallel to the vertical center axis of the process kit. Claim 8 A process kit according to any one of claims 1 to 7, further comprising at least one of a recess disposed along the lower outer edge of the dielectric plate; or a recess disposed along the lower inner edge of the dielectric deposition ring. Claim 9 A process kit according to any one of claims 1 to 7, further comprising a shadow clamp having a central opening larger than the inner portion of the dielectric plate and the dielectric deposition ring, wherein the shadow clamp has a lower surface configured to rest on the outer portion of the dielectric deposition ring, and the shadow clamp further has a width such that the outer edge of the shadow clamp extends beyond the outer edge of the dielectric deposition ring. Claim 10 A process kit according to claim 9, further comprising a recess positioned along the lower inner edge of the shadow clamp. Claim 11 A process kit according to any one of claims 1 to 7, wherein the dielectric plate further comprises an outer wall extending downward from the lower surface and a ledge extending outward from a lower portion of the outer wall, and the dielectric deposition ring further comprises a recess disposed along the lower inner edge of the dielectric deposition ring, and the ledge is disposed at least partially within the recess. Claim 12 A process kit according to any one of claims 1 to 7, wherein the dielectric plate and the dielectric deposition ring are a single component. Claim 13 An apparatus for processing a substrate, comprising: a substrate support having a support surface and an outer ridge disposed outside of the support surface—the support surface being elevated above the outer ridge—; and a process kit disposed on the top of the substrate support, wherein the process kit comprises: A dielectric plate having a lower surface covering the support surface and an upper surface configured to support a substrate; and An apparatus comprising a dielectric deposition ring surrounding the dielectric plate and covering the outer reticle. Claim 14 An apparatus according to claim 13, wherein the dielectric deposition ring further comprises a plurality of pins extending from the upper surface of the dielectric deposition ring, and the innermost pin among the plurality of pins extends to a height above the upper surface of the dielectric plate; at least one pin among the plurality of pins has at least one height or width different from other pins among the plurality of pins; each pin among the plurality of pins has a continuously lower height in a direction of radial outward movement; the pins among the plurality of pins are not uniformly spaced apart; or at least one pin among the plurality of pins is arranged not parallel to the vertical center axis of the process kit. Claim 15 An apparatus according to claim 13 or 14, further comprising at least one of a recess disposed along the lower outer edge of the dielectric plate; or a recess disposed along the lower inner edge of the dielectric deposition ring. Claim 16 An apparatus according to claim 13 or 14, further comprising a shadow clamp having a central opening larger than the inner portion of the dielectric plate and the dielectric deposition ring, wherein the shadow clamp has a lower surface configured to rest on the outer portion of the dielectric deposition ring, and the shadow clamp further has a width such that the outer edge of the shadow clamp extends beyond the outer edge of the dielectric deposition ring. Claim 17 In claim 16, the device further comprises a recess positioned along the lower inner edge of the shadow clamp. Claim 18 An apparatus according to claim 13 or 14, wherein the dielectric plate further comprises an outer wall extending downward from the lower surface and a ridge extending outward from a lower portion of the outer wall, and the dielectric deposition ring further comprises a recess disposed along the lower inner edge of the dielectric deposition ring, and the ridge is disposed at least partially within the recess. Claim 19 An apparatus according to claim 13 or 14, wherein the dielectric plate and the dielectric deposition ring are a single component. Claim 20 A physical vapor deposition chamber comprising: a chamber body; a cover assembly coupled to the chamber body and configured to support one or more targets for depositing one or more materials on a substrate during use; a substrate support disposed within the chamber body opposite to the cover assembly ― said substrate support has a support surface and an outer ridge disposed outside of said support surface, said support surface being elevated above said outer ridge ―; and a process kit as described in any one of claims 1 to 7 disposed on top of said substrate support.

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