Spin current generator using topological insulator

Abstract

The present invention relates to a spin current generating device using a phase insulator, comprising: a substrate (100); an insulating film (200) disposed on the substrate (100); a source electrode (301) disposed on the insulating film (200); a drain electrode (302) disposed on the insulating film (200); and a gate electrode (403) disposed on the substrate (100), wherein the insulating film (200) is made of a SiOC phase insulator. The spin current generating device using a phase insulator according to the present invention is a passive element (T) that is a spin current generating device, and can be used for AC and DC, and can be applied to a heat sink or heat dissipation system in an electronic circuit system with a large load capacity.

Description

Technology Field

[0001] The present invention relates to a spin current generating device using a phase insulator, and more specifically, the present invention relates to a spin current generating device using a phase insulator that blocks leakage current by utilizing a spin current generated in a SiOC thin film. Background Technology

[0002] Energy consists of electric and magnetic fields. According to energy symmetry, electrons are particles that generate electrical energy, while spins are antiparticles that generate magnetic energy. Particles create electric currents, and antiparticles generate spin currents; thus, the law of conservation of energy is completed by particles and antiparticles. Energy includes kinetic energy and thermal energy; particles create electric fields as they move forward, while antiparticles create magnetic fields through rotational motion. To design electronic circuit systems based on the energy symmetry of particles and antiparticles, four passive components—resistors (R), inductors (L), capacitors (C), and phase insulators (T)—derived from the relationships between voltage, current, magnetic flux, and charge are required. Resistors include ohmic resistance and magnetoresistance; ohmic resistance acts as a heat-generating element, while magnetoresistance acts as a heat-absorbing element. While the already known passive components R, L, and C make it easy to control the kinetic energy of electrons, controlling thermal energy is relatively difficult. Topological insulators (T) have magnetoresistance characteristics and, while it is easy to control thermal energy using the kinetic energy of spins, it is difficult to generate spin current. This invention relates to a method for fabricating a magnetoresistance device T that generates spin current and magnetic energy, which can be applied to electronic circuit systems, by fabricating a topological insulator (T) capable of spontaneously generating spin current and magnetic energy as a component.

[0003] The passive component T is magnetoresistance. Since magnetoresistance exhibits a negative temperature coefficient (NTC) characteristic where the current decreases as the temperature increases, it has the function of controlling temperature. A topological insulator is a device that generates spin current capable of reducing heat generation. Because the topological insulator possesses magnetoresistance characteristics, it can implement the passive component T.

[0004] In order to eliminate the heat generation phenomenon that is a problem in semiconductor process-based technologies such as HBM, TSV, hybrid bonding, and interposer technology, there is a need to develop a topological insulator that generates spin current.

[0005] To conserve energy, nonlinear loads such as inverters, rectifiers, phase controllers, and converters are increasing. These loads are steadily growing in response to demands for power conversion, speed control, precision control, and energy saving. However, the increase in nonlinear loads distorts waveforms and generates harmonics, thereby degrading power quality. To improve power quality, technology utilizing spin current is required as a fundamental solution to the harmonic issue.

[0006] A passive component T can generate a spin current by utilizing the tunneling characteristics of a topological insulator. Since the spin current is opposite in direction to the charge current, it can block leakage current while simultaneously reducing heat generation. A spin current that becomes a supercurrent when the resistance is zero is called a Dirac fermion spin current, and a spin current that is not zero is called a Weyl fermion spin current.

[0007] Supercurrent is generated when spin current is converted into electric current. A phase insulator is the energy conversion device between spin current and electric current. A phase insulator is a magnetic energy generator that creates spin current by changing the phase of the electric current. Therefore, applying phase insulators, which are magnetic field generators, to circuit design expands the operating voltage range, enabling broadband circuit design capable of current control.

[0008] Heat generation is becoming a problem in semiconductor devices / components such as small memory semiconductors, HBM, interposers, and TSV technology.

[0009] A silicon interposer is like a substrate composed of numerous TSVs, and TSV (through silicon via) technology is attracting attention as a semiconductor process technology that can fit a large amount of memory into a small space. However, heat generation is becoming a problem. Prior art literature

[0010] Patent Document 1: Registered Patent No. 10-1587129 (February 2, 2016) Patent Document 2: Registered Patent No. 10-2074994 (February 10, 2020) The problem to be solved

[0011] The present invention has been devised to solve the aforementioned problems. In order to eliminate thermal noise and leakage current contained in the electric current, the present invention connects a passive element T, which is a phase insulator that generates spin current, in the middle of the electric current flow, so that thermal noise and leakage current are eliminated while passing through the phase insulator passive element T.

[0012] The magnetic resistance according to the present invention refers to the electrical resistance of a phase insulator having both NTC (negative temperature coefficient) and PTC (positive temperature coefficient) characteristics, and the present invention aims to provide a spin current generating passive element T using a phase insulator with magnetic resistance characteristics.

[0013] According to the present invention, inductors and capacitances are mainly used in functional circuit design to cause a phase difference in signals, but they generate harmonics and reactive power, causing the power factor to drop; the present invention aims to provide a passive component T, which is a spin current generator capable of increasing the power factor.

[0014] The SiOC phase insulator according to the present invention aims to fundamentally solve the leakage current problem, thereby resolving the heat generation phenomenon of LEDs and eliminating the heat generation phenomenon in interposers and HBM (High Bandwidth Memory), and to resolve the bottleneck phenomenon in data centers.

[0015] The present invention aims to provide a passive component that enables circuit design with broad bandwidth characteristics and overcomes the limiting effect of threshold voltage by using a spin current generator utilizing a phase insulator according to the present invention.

[0016] The present invention aims to provide a spee current generator using a SiOC phase insulator according to the present invention for use in a surge circuit or grounding circuit that prevents overcurrent. means of solving the problem

[0017] A spin current generating device using a phase insulator according to an embodiment of the present invention for solving the aforementioned problem comprises: a substrate (100); an insulating film (200) disposed on the substrate (100); a source electrode (301) disposed on the insulating film (200); a drain electrode (302) disposed on the insulating film (200); and a gate electrode (403) disposed on the substrate (100), wherein the insulating film (200) is made of a SiOC phase insulator.

[0018] Additionally, a spin current generating device using a phase insulator according to one embodiment of the present invention comprises: a substrate (100); an insulating film (200) disposed on the substrate (100); a source electrode (301) disposed on the insulating film (200); and a drain electrode (302) disposed on the insulating film (200); wherein the substrate (100) operates as a gate electrode and the insulating film (200) is made of a SiOC phase insulator.

[0019] According to another embodiment of the present invention, the device may further comprise a source wiring (401) disposed on the source electrode (301); and a drain wiring (402) disposed on the drain electrode (302).

[0020] According to another embodiment of the present invention, the drain electrode (301), the source electrode (302), the drain wiring (402), and the source wiring (401) may be formed in a plate type.

[0021] According to another embodiment of the present invention, the device may further comprise a heat sink (1300) formed on the back surface of the substrate (100).

[0022] According to another embodiment of the present invention, the device may further comprise a fixed substrate (1400) formed on the back surface of the substrate (100) and on the source wiring (401) and the drain wiring (402), respectively.

[0023] According to another embodiment of the present invention, the device may further comprise: an inner case (1700) that accommodates and fixes the fixed substrate (1400); an outer case (1800) that accommodates the inner case (1700); a source extension wiring (403) that extends from the source wiring (401) and is formed in a plate type on the upper surface of the outer case (1800); and a drain extension wiring (404) that is connected to extend from the drain wiring (402) and is formed in a plate type on the upper surface of the outer case (1800).

[0024] According to another embodiment of the present invention, when the voltage applied to the gate electrode (303) is negative (-) bias, a (+) current flows, and when the voltage applied to the gate electrode is positive (+) bias, a (-) current flows, operating as a spin current, so that a tunneling phenomenon may occur.

[0025] According to another embodiment of the present invention, as the voltage of the drain electrode (302) decreases, the spin current increases, making it easier for the tunneling phenomenon to occur.

[0026] According to another embodiment of the present invention, when the voltage applied to the gate electrode (303) is 0, the resistance of the gate electrode (303) becomes 0, and a supercurrent can be generated by quantum superposition in which a (+) current and a (-) current are generated simultaneously.

[0027] According to another embodiment of the present invention, the insulating film (200) can operate as a negative temperature controller (NTC) as a magnetic resistance.

[0028] According to another embodiment of the present invention, the insulating film (200) may further comprise a plurality of spin electrodes (304) arranged in a row in the space between the source electrode (301) and the drain electrode (302).

[0029] According to another embodiment of the present invention, the spin current generating device is connected to an interposer disposed on a large-area substrate via a capture wiring to block leakage current of the interposer, and the interposer is configured to include a Through Silicon Via (TSV) formed on the silicon layer and a SiOC thin film formed on the surface of the Through Silicon Via (TSV) inside the silicon layer, and is disposed on a large-area substrate composed of silicon or glass plate, and is connected to the phase insulator transistor and the SiOC layer via the capture wiring to block leakage current of a semiconductor disposed on the interposer. Effects of the invention

[0030] A spin current generating device using a phase insulator according to the present invention can reduce the heat generation phenomenon at the load end and eliminate leakage current when spin current is generated while operating as a passive component (T) in AC and DC circuits.

[0031] The passive element T, which is a spin current generating device using a topological insulator according to the present invention, can be applied to quantum tunneling spin current, spin current generating device technology, harmonic control technology, leakage current blocking technology, magnetic energy generating device, and thermal energy control technology.

[0032] The passive element T, which is a spin current generating device using a topological insulator according to the present invention, is a device that exhibits symmetry, quantum entanglement, quantum fluctuation, and quantum convolution effects.

[0033] The spin current resulting from the energy momentum using the topological insulator according to the present invention corresponds to the quantum tunneling phenomenon of the Dirac equation, and can generate a spin current by utilizing the phenomena of quantum entanglement and quantum fluctuation.

[0034] Magnetoresistance characteristics are created through the spin current generation effect produced by the topological insulator according to the present invention, and since the spin current flows through the surface of the topological insulator and the surface current becomes an electric charge current, magnetic energy can be easily converted into electrical energy.

[0035] According to the present invention, the relationships R, L, C, and T can be derived based on energy symmetry. The heating phenomenon occurring in ohmic resistance and the heat dissipation phenomenon occurring in magnetoresistance require the existence of a T parameter due to symmetry, and the T parameter is a factor for spin current.

[0036] A surface current must exist between the spin current and the charge current, and the topological insulator according to the present invention can generate a surface current and acts as an intermediary that generates a spin current and converts it into a charge current. The topological insulator has a magnetic resistance characteristic of 0 to ∞ and a structure that is advantageous for the surface current to absorb heat, and ultimately satisfies Maxwell's equations.

[0037] As AI technology develops and technologies such as data centers and autonomous vehicles advance, the importance of technologies that reduce leakage current is growing. This is because as the physical size of semiconductor devices decreases with technological advancement, leakage current increases; consequently, leakage current generates heat and increases power consumption. Even if power consumption decreases due to smaller device size, it ultimately rises again due to leakage current and heat generation.

[0038] To reduce heat generation and power consumption, it is necessary to develop technology that fundamentally eliminates leakage current, harmonic signals, and noise. The phase insulator according to the present invention does not generate leakage current due to its magnetoresistance characteristics that convert electric current into spin current and the quantum tunneling phenomenon. The phase insulator according to the present invention is an amorphous SiOC thin film deposited on a silicon semiconductor, which is a phase insulator in which spin current is generated and tunneling occurs.

[0039] The spin current generated in the topological insulator according to the present invention can fundamentally solve problems of leakage current, noise, and heat generation. In particular, it can solve heat generation phenomena in structures and devices using semiconductors, such as small-sized LEDs, FINFETs, GAA transistors, DRAM semiconductors, TSVs, interposers, and HBM hybrid bonding technologies, and can solve bottlenecks in data centers. Brief explanation of the drawing

[0040] FIGS. 1 to 18 are drawings for explaining the technology related to a spin current generating device using a phase insulator according to the present invention. FIGS. 19 to 21 are drawings for explaining a spin current generating device using a phase insulator transistor installed in an interposer according to an embodiment of the present invention. FIG. 22 is a drawing illustrating a spin current generating device using a phase insulator according to an embodiment of the present invention. FIG. 23 is a drawing illustrating a spin current generating device using a phase insulator according to another embodiment of the present invention. FIGS. 24 and 25 are drawings illustrating a spin current generating device using a phase insulator according to another embodiment of the present invention. Referring to FIGS. 26 and 27, this is a drawing for explaining a method of installation as a passive element (T) in an AC circuit of a spin current generating device using a phase insulator according to an embodiment of the present invention. FIG. 28 is a drawing illustrating a spin current generating device using a phase insulator according to another embodiment of the present invention. FIG. 29 is a drawing illustrating a spin current generating device using a phase insulator according to another embodiment of the present invention. FIG. 30 is a drawing illustrating a spin current generating device using a phase insulator according to another embodiment of the present invention. FIG. 31 is a drawing illustrating a spin current generating device using a phase insulator according to another embodiment of the present invention. FIGS. 32 to 34 are drawings illustrating the results of removing noise components by a spin current generating device using a phase insulator transistor according to an embodiment of the present invention. FIG. 35 is a diagram illustrating a two-terminal notation method when a spin current generating device using a phase insulator according to an embodiment of the present invention is used as a magnetoresistance element. Specific details for implementing the invention

[0041] The present invention is capable of various modifications and may have various embodiments, and specific embodiments are illustrated in the drawings and described in detail in the detailed description. However, this is not intended to limit the present invention to specific embodiments, and it should be understood that it includes all modifications, equivalents, and substitutions that fall within the spirit and scope of the invention.

[0042] However, in describing the embodiments, if it is determined that a detailed description of related known functions or configurations could unnecessarily obscure the essence of the invention, such detailed description is omitted. Furthermore, the sizes of each component in the drawings may be exaggerated for illustrative purposes and do not represent the actual sizes applied.

[0043] Furthermore, throughout the specification, when a component is referred to as being "connected" or "joined" with another component, it should be understood that the component may be directly connected or joined to the other component, but unless specifically stated otherwise, it may also be connected or joined through an intermediate component. Additionally, throughout the specification, when a part is described as "including" a component, unless specifically stated otherwise, this means that it may include additional components rather than excluding other components.

[0044] The present invention relates to a passive T-element, which is a magnetoresistive electronic component utilizing a phase insulator that generates a spin current using a SiOC thin film and creates a leakage current blocking device using the spin current.

[0045] When leakage current occurs, heat is generated due to thermal resistance, and the generation of heat leads to a problem of increased power consumption. The phase insulator according to the present invention has the function of blocking leakage current and eliminating harmonics and thermal noise, and can be used as a grounding element by connecting it to a grounding wire.

[0046] The topological insulator according to the present invention does not generate leakage current due to its magnetoresistance characteristics that convert leakage current into spin current and its superconducting characteristics that generate supercurrent. Therefore, the SiOC topological insulator according to the present invention can provide an ideal grounding function through the magnetoresistance characteristics and spin current. The amorphous SiOC thin film is a room-temperature superconducting topological insulator that generates supercurrent, which is a spin current.

[0047] The phase insulator according to the present invention can solve the problem of heat generation due to leakage current, harmonics, noise, and ohmic resistance, so it can be applied to interposers, TSV (Through Silicon Via) technology and hybrid bonding technology.

[0049] 1. Necessity of the magnetoresistance passive component T

[0050] Voltage is electrical energy, and the flow of energy can be represented by charge current and spin current. To operate an electronic system, charge current passive components R, L, and C, and spin current passive components T are required for circuit design.

[0051] Referring to Fig. 1, among the R, L, C, and T passive components essential for circuit design, there is a passive component T that has not yet been developed. Current consists of charge current caused by particles and spin current caused by antiparticles. As a spin current generator, the passive component T is a passive component that operates using magnetic energy.

[0052] Referring to Figure 2, a spin current generator is required because there exists a region where spin current is generated by antiparticles in order to complete Maxwell's equations, which are electromagnetic field equations.

[0053] [Mathematical Formula 1]

[0054]

[0055] R, L, and C are passive components that operate above the threshold voltage, while the passive component T operates below the threshold voltage. During circuit design, the power factor drops due to noise such as leakage current and harmonic signals. Relatively speaking, spin current has the function of improving the power factor by eliminating noise components. Phase insulators generate spin current. A spin current generator utilizing a phase insulator enhances the stability of the transistor.

[0057] 2. Depletion Layer and Threshold Voltage

[0058] The PN junction of a semiconductor is called the depletion layer and is referred to as a potential barrier. A threshold voltage is generated due to the potential barrier created by the depletion layer. Ideally, current should not flow below the threshold voltage, but in reality, current flows even below this threshold voltage; this is called leakage current. Due to leakage current, memory semiconductors must set their operating voltage above the threshold voltage. If leakage current were eliminated, there would be no threshold voltage, allowing for the free fabrication of semiconductors without voltage constraints; therefore, technology is required to fundamentally block the occurrence of leakage current.

[0059] Referring to Fig. 3, the threshold voltage is related to mobility; a lower threshold voltage results in higher mobility, while an increase in the threshold voltage results in lower mobility. As mobility increases, leakage current also increases. Since FINFETs, GAA transistors, and DRAM semiconductors have small sizes, their low threshold voltages lead to higher mobility, but this simultaneously results in the disadvantage of increased leakage current. Since the increase in leakage current manifests as heat generation, technology is required to prevent leakage current from flowing even below the threshold voltage.

[0060] Switching elements are essential in digital circuit design, and the transistor is the most fundamental component among semiconductor devices. Representative switching elements are memory and power semiconductors. Memory has a low threshold voltage, while power semiconductors have a high threshold voltage. As memory size decreases, the threshold voltage decreases, leading to a relative increase in leakage current; therefore, leakage current can no longer be ignored. Conversely, power semiconductors have high threshold voltages and thus increase resistance, making heat generation a significant issue.

[0061] Referring to Figure 4, since the threshold voltage is a measure of electron mobility, most semiconductor devices cannot escape leakage current and heat generation due to the threshold voltage. A way to overcome the threshold voltage is to use spin current.

[0062] A topological insulator is a spin current generator that creates a spin current and converts it into an electric current through a surface current, and is a passive component T that completes Maxwell's equations.

[0064] 3. Spin Current Generator: Necessity of Phase Insulators

[0065] Referring to Figure 5, the energy momentum of the spins is faster for the down spin and slower for the up spin. This means that the down spin on the left side of the current-voltage plane moves faster. The speed of the up spin is slowing down as it undergoes energy conversion into a particle (electron). The down spin is an antiparticle with a faster speed. Depending on the resistance, the spin may move in the vertical direction or the horizontal direction.

[0066] Due to spin current, the symmetry between odd and even numbers is also applied to the operating principle of the magnetic energy passive element T.

[0067] The spin energy momentum, composed of thermal and kinetic energy, involves the down spin containing thermal energy occurring first, followed by the up spin capable of generating kinetic energy. The passive elements associated with particles are R, L, and C, while the T passive element is related to the antiparticle spin current. Energy gap ( ) is the voltage region where spin current operates, and the threshold voltage refers to the voltage at which particles begin to operate with kinetic energy.

[0068] When resistance and temperature are proportional, kinetic energy increases, and when resistance and temperature are inversely proportional, thermal energy increases. Superconductor properties appear and supercurrents are generated when resistance is zero and the temperature is zero. The thermal energy of a spin is a magnetic field. If the temperature is zero, thermal energy becomes zero, and there is no magnetic field. The tunneling phenomenon, where current is generated even in the absence of a magnetic field, and the quantum mutation spin Hall effect signify the generation of supercurrents. Down spins are all odd and represent energy (voltage), while up spins are all even and represent current. Even currents come in two types: spin currents with zero resistance (supercurrents) and spin currents with non-zero resistance. Supercurrents are Dirac fermion spin currents with zero resistance, while spin currents with non-zero resistance are Weyl fermion spin currents. As resistance increases, Weyl fermion spin currents transform into surface currents and become charge currents capable of moving particles. Since a spontaneous phase change of spin energy occurs at the threshold voltage, the particle (electron) satisfies the symmetry principle in which the mobility of the charge current increases while continuously and stably supplying spin energy.

[0070] 4. Relationship between capacitance and supercurrent of a phase insulator

[0071] Topological insulators consist of a depletion layer. Topological insulators exhibit the quantum anomalous spin Hall effect and quantum tunneling effect, and possess magnetoresistance properties, which are antiparticle (spin) characteristics that operate using magnetic energy.

[0072] Referring to Fig. 6, the topological insulator is a spin current generating device having a magnetic resistance of 0 to Δ. The spin energy momentum, consisting of up spin and down spin, has a resistance that decreases when the spin energy moves in the vertical direction, and when it moves in the horizontal direction, the spin energy decreases while the resistance increases infinitely, and the spin current becomes a surface current.

[0073] When a phase insulator is used, leakage current is eliminated because spin current flows below the threshold voltage. Since the spin current of the phase insulator also becomes a surface current, the problem of leakage current does not occur at the source.

[0074] As the size of semiconductor devices shrinks to the nanometer level, problems such as leakage current, heat generation, and increased power consumption are occurring in memory semiconductors, TSV (via-hole) technology, or interposer technology. To understand the relationship between energy and capacitors, structurally changing the thickness and area changes the capacitance and energy.

[0076] [Mathematical Formula 2]

[0077]

[0078] According to mathematical equation 2, as the area increases, the capacitance increases and the resistance increases. As the thickness increases relatively, the capacitance decreases and the resistance decreases, and the phase insulator has magnetoresistance characteristics that possess both PTC and NTC characteristics.

[0079] Since the spin current generated inside the topological insulator acts as a magnetic resistance, it can resolve the problematic heat generation phenomenon. The spin current moves in both vertical and horizontal directions. When the spin current acts in the vertical direction, it has the effect of thinning the capacitance thickness, and when it acts in the horizontal direction, it has the effect of widening the capacitance area, resulting in broadband characteristics.

[0081] 5. Relationship between Resistance and Temperature

[0082] The current generated in a semiconductor is induced as follows.

[0083] [Mathematical Formula 3]

[0084]

[0085]

[0086] If the total current caused by electrons (particles) appearing as the current flows is assumed to be zero,

[0087] [Mathematical Formula 4]

[0088]

[0089]

[0090] It is derived as an equation for electric field and temperature. At this time is the Boltzmann constant.

[0091] [Mathematical Formula 5]

[0092]

[0093] [Mathematical Formula 6]

[0094]

[0095] The relationship between electric field and temperature is inversely proportional. The energy gap of a silicon semiconductor is 1.12 eV. The temperature corresponding to the energy gap of silicon is It is 0.0259 eV at room temperature of 300 km. If the relationship between temperature and voltage and the threshold voltage are plotted on a graph, it can be seen that thermal energy is acting below the threshold voltage.

[0096] It is distinguished so that below the threshold voltage, it operates as thermal energy, and above the threshold voltage, it operates as kinetic energy where electrons can move. The region below the threshold voltage is where electrons cannot move, and this region where electrons cannot move is the magnetic energy region where spin energy momentum operates.

[0097] Referring to Fig. 7, the relationship between temperature and voltage can be expressed as the relationship between current and voltage. The relationship between current and voltage is an inverse relationship (NTC) due to thermal energy below the threshold voltage, and appears as a proportional (PTC) magnetoresistance above the threshold voltage. A topological insulator is one in which magnetoresistance can have a wide range from 0 to Δ. When the spin moves in the vertical direction, resistance decreases, generating a supercurrent, and when it moves in the horizontal direction, resistance increases, causing the spin current to gradually decrease. It can be seen that the superconducting characteristics of a topological insulator occur below the threshold voltage.

[0098] 6. Broadband Effect of Threshold-Free Phase Insulators

[0099] As ohmic resistance decreases, leakage current increases. While increasing ohmic resistance reduces leakage current, it also decreases efficiency. Ohmic resistance cannot escape leakage current. To reduce leakage current, the threshold voltage needs to be raised, but this increases resistance. A method to raise the threshold voltage while keeping leakage current low is to use insulating materials with low dielectric constants and high resistance, but this does not completely eliminate leakage current. A method to block leakage current involves using magnetoresistance with infinite resistance, and this effect is achievable with SiOC topological insulators. If conventional semiconductor SiO2 insulating films exhibit ohmic resistance characteristics, topological insulators exhibit magnetoresistance characteristics. Although leakage current and thermal resistance are always present in SiO2 oxide films, SiOC topological insulators have no leakage current and generate spin current, resulting in no heat loss and higher efficiency, which enables wide-bandwidth voltage control designs.

[0100] A topological insulator is a magnetoresistive device that operates using magnetic energy (magnetic field) in which the quantum anomalous spin Hall effect occurs. As shown in Fig. 3, even when creating high-mobility FINFETs, GAA transistors, or DRAM semiconductors by setting a low threshold voltage and minimizing ohmic resistance, or when making small-sized semiconductors, leakage current still flows in ohmic resistive devices. Because topological insulators possess magnetoresistive characteristics with infinite resistance, they can guarantee electromagnetic stability; thus, leakage current and harmonics are eliminated, preventing electromagnetic interference issues. Furthermore, magnetoresistive devices with infinite resistance possess both NTC and PTC properties, offering the advantage of controlling thermal energy, whereas ohmic resistance makes it difficult to control heat.

[0101] Referring to Fig. 8, the topological insulator SiOC thin film has a PTC characteristic in which the current decreases as the temperature rises because the resistance increases. The fact that the current decreases when the resistance is high is a magnetoresistance characteristic.

[0102] When a transistor is fabricated using a SiOC insulating film, bidirectional transfer characteristics and tunneling phenomena occur. Tunneling is a superconducting phenomenon in which spin current appears as the resistance becomes zero when the voltage in the SiOC insulating film is zero, and it is an NTC characteristic. Due to the superconductivity of the SiOC topological insulator, spin currents with a changing current phase appear, and as the voltage increases, the surface current increases, widening the bandwidth. Due to the spin current and surface current, there is no threshold voltage, and all currents can be controlled by voltage.

[0104] 3. Relationship between Resistance and Temperature

[0105] Resistance differs in the effects of kinetic energy and thermal energy. Ohmic resistance and magnetoresistance are dealt with in electromagnetic fields, while resistance due to temperature was proposed by Kelvin and Onness. Kelvin's relationship between temperature and resistance includes superconducting properties, whereas Onness's relationship excludes superconducting properties. Magnetoresistance refers to the electrical resistance exhibited in topological insulators and is proven only by Kelvin's relationship between temperature and resistance, which includes both PTC and NTC.

[0106] The relationship between conductors and insulators, ohmic resistance and magnetic resistance, and current and temperature can be summarized as shown in Fig. 9. Magnetic resistance possesses both NTC (negative temperature coefficient) and PTC (positive temperature coefficient) characteristics, while ohmic resistance exhibits only NTC characteristics as resistance increases. Resistance and temperature have an inverse relationship, demonstrating that supercurrent flows when resistance becomes zero. In the region where resistance and temperature are proportional, it is difficult for supercurrent to flow because resistance increases as temperature rises.

[0107] In all regions, current flows well when resistance is low and temperature is high, so temperature and resistance are inversely proportional. Similarly, in magnetic resistance, as resistance decreases and temperature increases, supercurrent flows.

[0108] Magnetoresistance is the resistance of the depletion layer, which is the semiconductor interface, and the depletion layer is an insulator. Insulators possess magnetoresistance. If magnetoresistance is inversely proportional to temperature, tunneling occurs; since supercurrents are generated by phase coherence at the point where resistance is smallest (zero), capacitance decreases. If the surface area of ​​the depletion layer is large, resistance and capacitance increase, and repulsive forces act. When capacitance is small and resistance becomes zero, attractive forces act, causing supercurrents to flow and the temperature to rise. Although topological insulators have high resistance, when the voltage becomes zero, spin currents are generated, and a phase transition occurs, resulting in tunneling. Tunneling creates supercurrents; if the voltage is gradually increased, the supercurrents provide energy to electrons, causing them to move and flow in the direction of lower resistance.

[0109] In conclusion, topological insulators have infinite resistance, and there are two ways in which current is generated: supercurrent and ordinary current. Supercurrent behaves like ohmic resistance due to its small capacitance, while ordinary current behaves like magnetic resistance due to its large capacitance. In a topological insulator with infinite resistance, electrons cannot move. When electrons cannot move, spin current is generated due to quantum fluctuations, and supercurrent is generated through quantum tunneling caused by quantum superposition. As the surface area increases due to quantum entanglement, capacitance increases, causing an ordinary charge current to flow due to the flow of electrons.

[0111] 7. Electrical Characteristics of Magnetoresistance and Conditions for Supercurrent Generation

[0112] Referring to Fig. 9, in the current-voltage curve, the (+) current is the ohmic resistance region, and the (-) current is the magnetoresistance region. On the current-voltage coordinate, as the temperature increases from absolute zero, magnetoresistance decreases, and ohmic resistance also decreases as the temperature increases. Depending on the current, it is divided into a conductor that operates at (+) current and an insulator that operates at (-) current. If there is a threshold voltage, it is a conductor, and if there is no threshold voltage, it is an insulator. A phase insulator has no threshold voltage, but spin current flows. A phase insulator has magnetoresistance characteristics that possess both NTC and PTC properties.

[0113] Resistance, voltage, and capacitance are proportional, and higher resistance leads to higher energy. It can be seen that the energy of a topological insulator with infinite resistance is infinite. Due to the high energy of the magnetic resistance in PTC characteristics, the bandwidth is wide, and the current can be freely controlled by voltage. In NTC characteristics, supercurrent is generated as the temperature rises.

[0115] 8. Topological Insulators and the Dirac Equation

[0116] According to the Maxwell-Boltzmann equation in mathematical equation 6 below,

[0117] [Mathematical Formula 6]

[0118]

[0119] In this case, it can be expressed as the Dirac equation as in mathematical equation 7.

[0120] [Mathematical Formula 7]

[0121]

[0122] The graph following the Dirac equation of Equation 7 shown in Fig. 10 is for absolute temperature 0K (-273 It expresses the probability of an electron existing from [start] to room temperature. When a topological insulator is used, an electrical signal satisfying the Dirac equation appears at room temperature. Tunneling occurs more readily as the external voltage decreases, and the tunneling current can be measured without cooling. This is an electrical characteristic of a room-temperature superconductor.

[0123] Dirac's equation appears in topological insulator transistors, exhibiting bidirectional transfer characteristics where positive current flows at negative voltage and negative current flows at positive voltage, regardless of how much the drain voltage increases. Figure 11 shows the negative temperature coefficient (NTC) characteristic, where the current flows more as the drain and gate voltages decrease. These topological insulator characteristics, which allow for wide-bandwidth voltage control while being electrically free of leakage current, are suitable for display video, HBM, interposers, and hybrid wiring processes.

[0124] 9. Magnetic Energy: Spin Current Characteristics of Topological Insulators

[0125] A topological insulator (TI) device was fabricated by depositing a SiOC topological insulator on a silicon substrate and creating a two-terminal electrode. As shown in Table 1, the power consumption was fixed at 0.1W using a digital power supply, and the current and voltage were measured.

[0127] [Table 1]

[0128]

[0130] Referring to Fig. 12, the graph is obtained by measuring the voltage and current of the phase insulator and calculating the power consumption. Fig. 12(a) shows the voltage and current, while Figs. 12(b) and 12(c) show the power consumption. The power consumption exhibits a symmetrical shape depending on the current and voltage. Depending on the voltage and current, there is a region where the power consumption increases and then decreases, and in the resistor in Fig. 12(a), the current and voltage change abruptly at the location where there is no slope of the resistance. Two locations appeared where the slope of the resistance decreased as the resistance increased. The phase changed at the location where the resistance increased.

[0131] Referring to FIG. 13, FIG. 13(a) and FIG. 13(b) show power consumption and resistance with respect to voltage and current. In FIG. 13(a), as the voltage decreases and the resistance increases, the power consumption decreases rapidly. In FIG. 13(b), as the current increases, the resistance increases, so the power consumption decreases rapidly. In common, power decreased as resistance increased.

[0132] FIG. 14 is a graph showing resistance and power consumption, where FIG. 14(a) shows resistance to voltage change, FIG. 14(b) shows power consumption to voltage change, FIG. 14(c) shows resistance to current change, and FIG. 14(d) shows resistance to current change.

[0133] Referring to Fig. 14, the current and voltage are arranged according to resistance. To represent the resistance from low to high values, the graphs of current and power were transformed horizontally as shown in Figs. 14(a) and 14(b). Since voltage and current have energy symmetry, the graphs of voltage and power were transformed vertically as shown in Figs. 14(c) and 14(d). As resistance increases, the phase of the current and voltage changes.

[0134] A phenomenon was observed in the high-resistance region where the current increased as the voltage decreased. The voltage corresponding to charge symmetry is the Dirac fermion spin current, and the current corresponding to parity symmetry is the Weyl fermion spin current. The two spin currents were separated from the Majorana fermion. Since the spin current with low resistance is the Majorana fermion, it can be inferred that the high resistance of the Dirac fermion and Weyl fermion is due to the spin current. In Figures 14(c) and 14(d), the topological insulator exhibits two phase shifts in the current, and the current changed abruptly in the region where the resistance decreased and then increased. The current increased despite the low voltage and high resistance. The reason for the increase in current is the high resistance. These results imply that magnetoresistance is magnetic energy. The phenomenon where the current increases despite high resistance is a magnetoresistance characteristic. It can be seen that spin current is being generated in the phase insulator, as the voltage change is 13V to 7.5V and the current is small (0.014A to 0.024A), but the resistance change is large. The phase changes depending on the change in resistance.

[0135] Referring to Fig. 15, the spin current responds sensitively to changes in resistance and changes phase depending on the current and voltage. The current is parity-symmetric, and the voltage is charge-symmetric. Fig. 15 illustrates the supersymmetry of the spin current according to parity symmetry and charge symmetry. The spin current consists of two components: Dirac fermions and Weyl fermions. Dirac fermions are the charge-symmetric component, while Weyl fermions are the spin currents that are parity-symmetric.

[0136] The spin current that changes rapidly in the low-resistance region is the Majorana fermion. The spin current operates as the Majorana fermion splits into two components: the Dirac fermion and the Weyl fermion. The Weyl fermion becomes kinetic energy and the Dirac fermion becomes thermal energy, so the total energy always remains constant.

[0137] Changing resistance generates a flow of energy, and energy moves from a place of high resistance to a place of low resistance. It can be observed that when resistance decreases, it changes phase to increase resistance, generating magnetic energy on its own as it proceeds.

[0138] Since the voltage phase changes before the current phase, it can be seen that charge symmetry occurs before parity symmetry. This result proves that the down spin occurs first when comparing the velocities of down-spin Dirac fermions and up-spin Weyl fermions. Furthermore, it can be understood that the reason spin phase changes is due to the function of conserving magnetic energy by increasing resistance; to conserve magnetic energy, thermal energy obtained from the surface current of Weyl fermions acts to increase the resistance that would otherwise decrease through phase transformation.

[0140] 10. Current amplification characteristics of the channel layer phase insulator

[0141] By creating a channel layer in a topological insulator transistor, current can be amplified; an electrical signal in which current is amplified can be obtained as the resistance decreases over a wide range from 0.0001V to 40V as the drain voltage increases. As shown in Fig. 16, the channel layer topological insulator exhibits a positive temperature coefficient (PTC) characteristic, where the current amplifies as it increases from negative to positive as the drain voltage increases. Since a topological insulator is used as the gate insulating film, V is used as the threshold voltage. GS Since stability is guaranteed because the voltage does not exceed 0 V, V DS As voltage increases, current also increases, and mobility increases steadily accordingly.

[0143] 11. Operating Principle of Grounding Elements

[0144] Topological insulators exhibit a resistance value of infinity. Materials with high resistance are insulators, and based on the dielectric constant, the best insulating material is vacuum (ε).r = 1.0). The dielectric constant of a phase insulator is smaller than the dielectric constant of vacuum, which is 1.0. Phase insulators exhibit negative resistance (magnetic resistance) characteristics. In other words, phase insulators are unrelated to leakage current, which is electrical energy, and since they operate using magnetic energy, they respond to the Earth's magnetic field. Therefore, phase insulators are suitable for use as grounding elements.

[0145] As shown in Fig. 17, topological insulators (TI) are installed by inserting them in series or parallel connection between the auxiliary protective equipotential bonding conductor and the grounding conductor.

[0146] Leakage current trapped in the grounding wire is converted into spin current within the phase insulator and dissipates. The phase insulator is connected to the grounding wiring; by connecting the phase insulator, which has relatively high resistance, to the earth, which has relatively low resistance, the stability of the magnetic field is enhanced, thereby simultaneously eliminating surrounding leakage current.

[0147] In this way, it is necessary to install phase insulators and grounding wires to eliminate leakage current and electromagnetic waves from transmission lines installed inside the building and to ensure safety.

[0148] When electrons move, an electric current flows. When an electric field is generated in the direction of the current's movement, a magnetic field is also generated, and consequently, a leakage current is generated. To eliminate the leakage current generated in a transmission circuit, there is a method to eliminate the leakage current by passing a grounding wire through a phase insulator.

[0150] 12. Application Principles of TSV Technology, Hybrid Bonding, and Interposer Technology

[0151] BEOL (back end of line) includes a packaging stage to connect the semiconductor chip to the outside world. In this stage, a suitable package is formed to protect the chip and connect it to other devices. The interposer is an essential component that determines performance and efficiency in semiconductor technology, serving as a communication device that connects microscopic circuits to exchange information.

[0152] HBM refers to loading memory into a small space, but this has disadvantages such as difficulty in heat dissipation between chips, signal interference, and reduced efficiency. Therefore, to configure artificial intelligence data centers, TSV technology is being applied to interposers along with HBM (high bandwidth memory).

[0153] Packaging technology is summarized as interposer and TSV (through silicon via) technology. Substrate technology capable of being used as an interposer is becoming important, while TSV technology is gaining importance as a method for designing short wiring lengths. Interposer and TSV technologies are closely related to insulation layer technology, and methods for controlling magnetoresistance, magnetic energy, and thermal energy are critical.

[0154] As shown in Fig. 18, high bandwidth memory (HBM) technology requires electrical connections between die layers. By applying the TSV process while stacking the memories, fast data processing speeds and low power consumption are possible, and efficiency is increased. As such, the TSV process has become an essential element in manufacturing high-performance memory.

[0155] In addition, according to the spin current generating device of one embodiment of the present invention, since the SiOC insulating film is a topological insulator, when used as an insulating film between a via hole and a metal wire in a TSV process, it has a leakage current blocking effect.

[0156] In addition, according to the spin current generating device of one embodiment of the present invention, since the SiOC insulating film is a topological insulator, when used as a topological insulator thin film connecting metal wirings in a hybrid bonding process for stacking semiconductor layers, it has a leakage current blocking effect caused by spin current.

[0157] In addition, according to the spin current generating device of one embodiment of the present invention, since the SiOC insulating film is a topological insulator, it has a leakage current blocking effect when used as an interlayer insulating film in the HBM process.

[0158] The interposer (600) must have low power consumption, leakage current blocking, and grounding. It is desirable to use a room-temperature superconducting phase insulator as a method to solve these three problems simultaneously, because the room-temperature superconducting phase insulator does not allow leakage current to flow and spin current to flow.

[0159] Referring to FIGS. 19 and 20, in order to eliminate the heat generation phenomenon of the interposer (600), an upper collection wire (801) is placed at the bottom of the interposer (600), and the collected thermal noise is transmitted through a lower collection wire (802) on a substrate (700) installed at the same location as the collection wire (801), and connected to a spin current generating device (500) using a phase insulator to convert it into a spin current and eliminate the thermal noise. At this time, an AC power source may be applied.

[0160] Referring to FIG. 21, the captured thermal noise and leakage current are transmitted to the capture wiring (802) and pass through a spin current generator (500) using a phase insulator to be removed by spin current generation, and the power supply can operate with a DC circuit design.

[0161] A spin current generator (500) using a phase insulator may include a heat sink, and more specifically, when the capacity of the load end is large, a heat sink may be added to the spin current generator (500) using a phase insulator.

[0162] As shown in FIG. 21, a spin current generator (500) using a phase insulator can be placed to protect the interposer (600) in order to eliminate thermal noise and leakage current. In this case, the spin current generator (500) uses a SiOC phase insulator as the phase insulator, and the interposer (600) can use a silicon substrate or a glass substrate as the substrate (601).

[0163] In addition, according to an embodiment of the present invention, a spin current generator (500) is connected to the bottom of the interposer (600) through a thermal noise and leakage current collection wire (801) so that leakage current can be removed by spin current. At this time, leakage current and thermal noise components are collected through a collection wire (802) installed on a substrate at the same location as the collection wire (801) installed at the bottom of the interposer (600), transmitted to a general wire (900), and then transmitted to the spin current generator (500) so that leakage current can be removed by the spin current of the spin current generator (500).

[0164] Since the heat generation phenomenon of the interposer (600) is a phenomenon that occurs as resistance decreases and the kinetic energy of the particles increases, if a spin current generating device (500) using a phase insulator with infinite resistance and spin current generation is used, the heat generated in the interposer can be reduced.

[0166] 13. Metal Wiring Process

[0167] Since spin current flows in the topological insulator SiOC thin film, after depositing the SiOC thin film (200) on the ITO glass substrate (700), the electrode wiring can be used as a transparent electrode.

[0168] When metal wiring (801, 801) is placed on a SiOC / Si substrate (200), a normal (particle) current flows along the metal wiring placed on top because spin current flows in the SiOC layer (501), but leakage current is eliminated.

[0170] FIGS. 22 to 29 are drawings for explaining a spin current generating device (500) using a phase insulator according to the present invention.

[0171] From now on, a spin current generating device (500) using a phase insulator according to an embodiment of the present invention will be described with reference to FIGS. 22 to 29.

[0172] Referring to FIG. 22, a spin current generating device (500) using a phase insulator according to an embodiment of the present invention may be configured to include a substrate (100), an insulating film (200) disposed on the substrate (100), a source electrode (301) disposed on the insulating film (200), a drain electrode (302) disposed on the insulating film (200), and a gate electrode (303) disposed on the substrate (100).

[0173] At this time, the insulating film (200) is made of SiOC, and may be configured with infinite resistance and a dielectric constant of 1.0 or less. The SiOC insulating film is configured with an amorphous structure to have a structure similar to a depletion layer or a vacuum state (εr=1.0).

[0174] Referring to FIG. 23, a spin current generating device (500) using a phase insulator according to another embodiment of the present invention comprises a substrate (100), an insulating film (200) disposed on the substrate (100), a source electrode (401) disposed on the insulating film (200), and a drain electrode (302) disposed on the insulating film (200), and the substrate (100) is configured to operate as a gate electrode.

[0175] In the embodiments of FIGS. 22 and 23, when the voltage applied to the gate electrode (303) is negative (-) bias, a (+) current flows, and when the voltage applied to the gate electrode is positive (+) bias, a (-) current flows. The spin current operates to cause tunneling, and the lower the voltage of the drain electrode (402), the greater the spin current, making it easier for tunneling to occur.

[0176] In addition, when the voltage applied to the gate electrode (303) is 0, the resistance of the gate electrode (303) becomes 0, and a supercurrent is generated by quantum superposition in which a (+) current and a (-) current are generated simultaneously.

[0177] In addition, when the voltage applied to the gate electrode (303) is 0, the resistance of the gate electrode (303) becomes 0, causing quantum fluctuations and spin currents to occur, and the voltage and resistance are inversely proportional and the temperature and resistance are inversely proportional, and when the voltage applied to the gate electrode (303) increases, quantum entanglement occurs, causing the resistance to increase and the spin current to become a surface current, so that the voltage and resistance are proportional and the temperature and resistance are proportional.

[0178] Through the configuration of such an insulating film (200), a spin current is generated as the resistance changes from 0 to infinity depending on the applied voltage, and leakage current is eliminated due to the generation of such spin current. In addition, the insulating film (200) can operate as a negative temperature controller (NTC).

[0179] Meanwhile, the SiOC insulating film (200) must have a carbon content of 0.5% or less to generate spin current, and the SiOC thin film must be deposited on an N-type silicon substrate.

[0180] In addition, SiOC topological insulators can generate spin currents due to magnetoresistance characteristics where resistance varies from 0 to Δ, and since magnetic energy is manifested, thermal energy can also be controlled. When the resistance becomes 0, tunneling occurs, and when the resistance is high, the temperature increases, causing the charge current to decrease. To increase the surface current, the heat dissipation effect can be increased as the thickness of the SiOC thin film decreases.

[0181] Flicker is a phenomenon where the current becomes zero when the voltage becomes zero, causing a blinking effect. However, spin current does not become zero even when the voltage is zero, so flicker does not occur, and since the threshold voltage is eliminated, it has wide bandwidth characteristics.

[0182] In addition, according to the phase insulator transistor of the present invention, since the spin current does not become a zero state even when the voltage becomes zero, it can be used as an AI artificial intelligence type bitNET device capable of representing three states of -1, 0, and 1.

[0183] In the embodiments of FIGS. 24 and 25, when the source electrode (301) and the drain electrode (302) are placed on the insulating film (200), they may be arranged to cover a large area of ​​the insulating film (200). Additionally, electrode wiring (401, 402) may be formed on the source electrode (301) and the drain electrode (302).

[0184] In this way, the larger the area of ​​the electrode wiring (401, 402) connected to the outside, the more spin current (current between source and drain) can be induced, and the spin current proportional to the large electrode is converted into electric current.

[0185] At this time, as shown in FIGS. 24 and 25, the electrode wiring (401, 402) may be formed in a patterned form in an area corresponding to the source electrode (301) and the drain electrode (302) on the insulating film (200). At this time, the electrode wiring (401, 402) may be configured to include a main part covering the source electrode (301) and the drain electrode (302) and an extension part extending from the main part.

[0186] At this time, as shown in FIG. 24, when the capacity of the load section is large, the back surface of the substrate (100) may be further configured to include a heat sink (1300) to enable effective heat dissipation.

[0187] Referring to FIGS. 26 and 27, a spin current generating device (500) using a phase insulator according to an embodiment of the present invention can reduce the heat generation phenomenon at the load end and eliminate leakage current when spin current is generated while operating as a passive element (T) in AC and DC circuits.

[0188] FIG. 28 shows a spin current generating device (500) using a phase insulator according to another embodiment of the present invention, comprising a substrate (100), an insulating film (200) disposed on the substrate (100), a source electrode (301) disposed on the insulating film (200), a drain electrode (302) disposed on the insulating film (200), a gate electrode (303) disposed on the substrate (100), a source wiring (401) disposed on the source electrode (301), and a drain wiring (402) disposed on the drain electrode (302), wherein the drain electrode (301), the source electrode (302), the drain wiring (401), and the source wiring (402) are formed in a plate type.

[0189] At this time, in the embodiment of FIG. 28, the device is further configured to include a fixed substrate (1400) formed on the back surface of the substrate (100) and on the source wiring (401) and the drain wiring (402), respectively. The fixed substrate (1400) may be composed of glass or heat-resistant reinforced plastic as a substrate for fixing spin current devices.

[0190] Additionally, FIG. 29 illustrates a spin current generating device (500) using a phase insulator according to another embodiment of the present invention, wherein the spin current generating device (500) using a phase insulator according to the embodiment of FIG. 28 comprises an inner case (1700), an outer case (1800), a source extension wiring (403), and a drain wiring (404).

[0191] The inner case (1700) accommodates and fixes the fixed substrate (1400), and the outer case (1800) accommodates the inner case (1700).

[0192] At this time, the inner case (1700) is a case for fixing general wiring, and the outer case (1800) is a case that constitutes the exterior of a spin current generator that absorbs leakage current.

[0193] Additionally, the source extension wiring (403) is extended from the source wiring (401) and formed in a plate type on the upper surface of the outer case (1800), and the drain extension wiring (404) is connected to extend from the drain wiring (402) and formed in a plate type on the upper surface of the outer case (1800).

[0194] At this time, the source wiring (401), the drain wiring (402), the source extension wiring (403), and the drain wiring (404) may be made of a metal material such as Cu, Al, Ag, or Au, or may use zinc-plated Cu or tin-plated Cu.

[0195] As such, since spin currents generated from thermal energy have the characteristic of decreasing resistance as temperature rises, when heat is generated in electrical systems where high voltage flows, such as electric vehicle batteries or data centers, contacting the spin current generator according to the present invention reduces resistance and generates spin current, thereby reducing heat generation. At this time, by contacting the phase insulator according to the present invention to the planar portion where heat is generated, leakage current can be blocked and converted into spin current.

[0196] Additionally, referring to FIG. 30, a spin current generating device (500) using a phase insulator according to an embodiment of the present invention may be configured to include a substrate (100), an insulating film (200) disposed on the substrate (100), a source electrode (401) disposed on the insulating film (200), a drain electrode (302) disposed on the insulating film (200), and a gate electrode (303) disposed on the substrate (100), and further comprises a plurality of spin electrodes (304).

[0197] The plurality of spin electrodes (304) are arranged in a row on the insulating film (200) in the space between the source electrode (301) and the drain electrode (302).

[0198] Additionally, referring to FIG. 31, a spin current generating device (500) using a phase insulator according to another embodiment of the present invention comprises a substrate (100), an insulating film (200) disposed on the substrate (100), a source electrode (301) disposed on the insulating film (200), and a drain electrode (302) disposed on the insulating film (200), wherein the substrate (100) is configured to operate as a gate electrode and further comprises a plurality of spin electrodes (304).

[0199] The plurality of spin electrodes (304) are arranged in a row on the insulating film (200) in the space between the source electrode (401) and the drain electrode (302).

[0200] FIGS. 32 to 34 are drawings illustrating the results of removing noise components by a spin current generating device using a phase insulator transistor according to an embodiment of the present invention.

[0201] Referring to FIG. 32 (a) and FIG. 33 (a), the screen of the TV or monitor was not clear due to leakage current and noise components, but referring to FIG. 32 (b) and FIG. 33 (b), it can be seen that when the phase insulator according to the present invention is connected to the AC power of the TV or monitor, the leakage current and noise components are removed and a clear screen is output.

[0202] Furthermore, according to the present invention, since the input current has no spin current and the output current has a spin current, energy efficiency is increased and power consumption is reduced. Power consumption is reduced because leakage current is converted into spin current.

[0203] Referring to FIG. 34, it can be seen that when a phase insulator according to the present invention is connected to the AC power of a speaker / audio system, leakage current and noise components are removed, and a clean sound is output.

[0204] FIG. 35 illustrates a two-terminal notation method when a spin current generating device using a phase insulator according to an embodiment of the present invention is used as a magnetoresistance element, and when three terminals are applied, it functions as a tunneling transistor.

[0205] FIG. 36 is a diagram illustrating the current amplification effect of a spin current generator using a phase insulator according to an embodiment of the present invention. A current amplification effect is observed at the output terminal of the spin current generator using a phase insulator according to an embodiment of the present invention because the spin current generated from the phase insulator is added.

[0206] Spin current has an amplification effect even without resistance, and when it passes through a bridge diode to generate DC, the magnitude changes by the magnitude of the spin current when the (-) signal changes to a (+) signal, so the voltage does not become zero even without capacitance, and thus flicker or noise does not appear.

[0207] As such, since the phase difference between the charge voltage and charge current does not occur due to the spin current, no leakage current is generated. In other words, the superposition (quantum entanglement) of the spin current fundamentally blocks the occurrence of leakage current.

[0208] FIG. 37 is a diagram illustrating a Qubit and bitNet device with a spin current generating device using a phase insulator according to an embodiment of the present invention.

[0209] The spin current generating device using a phase insulator according to the present invention is a passive element (T), and since no leakage current is generated, there is no noise and no electromagnetic waves are generated. Since it has NTC and PTC characteristics, it can control temperature, has a surge function, has a leakage current blocking function, and can be used as a Qubit or bitNet in a quantum computer.

[0210] In other words, by creating a transistor structure that operates on direct current as in the present invention, the voltage can be controlled using the gate terminal. Since the spin current can be controlled by the voltage of the gate electrode, it can operate as a Qubit device or a bitNet device by controlling the current flowing between the source and drain electrodes. Because leakage current is fundamentally blocked by the superposition (quantum entanglement) of the spin current, fine current signal processing at the nanocurrent (nA) level is possible, allowing it to operate as a quantum device.

[0211] In the detailed description of the present invention as described above, specific embodiments have been described. However, various modifications are possible within the scope of the present invention. The technical concept of the present invention should not be limited to the aforementioned embodiments, but should be defined by the claims as well as equivalents thereof. Explanation of the symbols

[0212] 100 : Silicon wafer 200 : Phase insulator 301: Source electrode 302: Drain electrode 401: Source Wiring 402: Drain wiring 500 : Spin current generator using a phase insulator 600 : Interposer 700 : Substrate

Claims

Claim 1 A spin current generating device using a topological insulator comprises: a substrate (100); an insulating film (200) disposed on the substrate (100); a source electrode (301) disposed on the insulating film (200); a drain electrode (302) disposed on the insulating film (200); and a gate electrode disposed on the substrate (100); wherein the insulating film (200) is made of a SiOC topological insulator, and the gate electrode is characterized in that when the voltage applied to the gate electrode is 0, the resistance of the gate electrode becomes 0, and a supercurrent is generated by quantum superposition in which a (+) current and a (-) current are generated simultaneously. Claim 2 A spin current generating device using a topological insulator comprises: a substrate (100); an insulating film (200) disposed on the substrate (100); a source electrode (301) disposed on the insulating film (200); and a drain electrode (302) disposed on the insulating film (200); wherein the substrate (100) operates as a gate electrode, the insulating film (200) is made of a SiOC topological insulator, and the gate electrode is characterized by generating a supercurrent through quantum superposition in which the resistance of the gate electrode becomes zero when the voltage applied to the gate electrode is zero, thereby generating a (+) current and a (-) current simultaneously. Claim 3 A spin current generating device using a phase insulator according to claim 1, further comprising: a source wiring (401) disposed on the source electrode (301); and a drain wiring (402) disposed on the drain electrode (302). Claim 4 A spin current generating device using a phase insulator according to claim 3, wherein the source electrode (301), the drain electrode (302), the drain wiring (402), and the source wiring (401) are formed in a plate type. Claim 5 A spin current generating device using a phase insulator, characterized by further including a heat sink (1300) formed on the back surface of the substrate (100) in claim 4. Claim 6 A spin current generating device using a phase insulator, characterized in that, in claim 4, it further comprises a fixed substrate (1400) formed on the back surface of the substrate (100) and on the source wiring (401) and the drain wiring (402), respectively. Claim 7 A spin current generating device using a phase insulator according to claim 6, further comprising: an inner case (1700) that accommodates and fixes the fixed substrate (1400); an outer case (1800) that accommodates the inner case (1700); a source extension wiring (403) that extends from the source wiring (401) and is formed in a plate type on the upper surface of the outer case (1800); and a drain extension wiring (404) that is connected to extend from the drain wiring (402) and is formed in a plate type on the upper surface of the outer case (1800). Claim 8 A spin current generating device using a phase insulator according to claim 1 or claim 2, characterized in that it operates as a spin current in which a (+) current flows when the voltage applied to the gate electrode is negative (-) biased, and a (-) current flows when the voltage applied to the gate electrode is positive (+) biased, thereby causing a tunneling phenomenon. Claim 9 A spin current generating device using a phase insulator according to claim 1 or claim 2, characterized in that the lower the voltage of the drain electrode (302), the greater the spin current, and the tunneling phenomenon occurs more easily. Claim 10 delete Claim 11 A spin current generating device using a phase insulator according to claim 1 or claim 2, wherein the insulating film (200) operates as a negative temperature controller (NTC) as a magnetic resistance. Claim 12 A spin current generating device using a phase insulator, characterized in that, in claim 1 or claim 2, it further comprises a plurality of spin electrodes (304) arranged in a row in the space between the source electrode (301) and the drain electrode (302) on the insulating film (200). Claim 13 delete

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