Substrate including fine through-aluminum electrodes, method for manufacturing the same, interposer and semiconductor device package

Abstract

A substrate comprising a micro-through-aluminum electrode and a method for manufacturing the same are disclosed, which enable the manufacture of high-performance interposers or next-generation high-density substrates through a simple, low-cost process. The method for manufacturing a substrate comprising a micro-through-aluminum electrode according to the present invention comprises the steps of: preparing an aluminum plate; forming a mask for an anodized aluminum oxide (AAO) process on the aluminum plate; performing an anodized aluminum oxide process; filling nanopores formed on the surface of the aluminum plate by performing the anodized aluminum oxide process with an insulator; and flattening the upper and lower surfaces of the aluminum plate in which the nanopores are filled with an insulator to expose the aluminum below the mask for the anodized aluminum oxide process to the outside.

Description

Technology Field

[0001] The present invention relates to a substrate comprising a micro-through aluminum electrode and a method for manufacturing the same, and more specifically, to a substrate comprising a micro-through aluminum electrode and a method for manufacturing the same that enables the manufacturing of a high-performance interposer or a next-generation high-integration substrate through a simple, low-cost process. Background Technology

[0003] In semiconductor packaging processes, through-silicon via (TSV) electrodes are being used to increase integration density instead of wire bonding. Recently, through-glass via (TGV) structures using glass instead of silicon are also being developed.

[0004] The disadvantage of the through-electrode formation method is that the process of machining holes with high aspect ratios is difficult and expensive. The TSV method requires performing an expensive process called Si Deep Etcher for more than an hour, and the TGV method requires etching glass with a laser and strong acid for several hours to form through-holes.

[0005] After forming through holes in silicon or glass, electrodes must be filled inside them by plating; however, there is a problem of reduced productivity because plating within high aspect ratio structures requires very precise control of plating conditions and a long plating process to prevent internal pores. The problem to be solved

[0007] The present invention aims to solve the aforementioned problems, and the objective of the present invention is to provide a substrate including a micro-through aluminum electrode that enables the manufacture of a high-performance interposer or a next-generation high-integration substrate through a simple, low-cost process, and a method for manufacturing the same. means of solving the problem

[0009] A method for manufacturing a substrate including a micro-penetrating aluminum electrode according to one aspect of the present invention for achieving the above objectives comprises: a step of preparing an aluminum plate; a step of forming a mask for an anodized aluminum oxide (AAO) process on the aluminum plate; a step of performing an anodized aluminum oxide process; a step of filling nanopores formed on the surface of the aluminum plate by performing the anodized aluminum oxide process with an insulator; and a step of flattening the upper and lower surfaces of the aluminum plate in which nanopores are filled with an insulator to expose the aluminum below the mask for the anodized aluminum oxide process to the outside.

[0010] The aluminum plate beneath the mask for the anodic aluminum process is not oxidized and can become a micro-penetrating aluminum electrode.

[0011] The size of the micro-penetrating aluminum electrode may vary depending on the size of the mask for the anodic aluminum oxidation process.

[0012] A mask for anodizing aluminum processes may include at least one of silicon oxide and silicon nitride.

[0013] The insulator can be a metal oxide. The insulator can be aluminum oxide.

[0014] The step of filling nanopores created on the surface of an aluminum plate with an insulator can be performed by any one of the following processes: an Atomic Layer Deposition (ALD) process, a Plasma Enhanced Chemical Vapor Deposition (PECVD) process, and a process of applying and filling a solution containing a material that is an insulator when solidified, and then drying or solidifying it with heat or electromagnetic wave energy.

[0015] The width of the mask may be 1 μm to 100 μm, and the diameter of the nanopores may be 1 nm to 100 nm.

[0016] Nanopores of different diameters can be formed.

[0017] According to another aspect of the present invention, a substrate comprising a micro-penetrating aluminum electrode manufactured according to a method for manufacturing a substrate comprising a micro-penetrating aluminum electrode is provided, the method comprising: preparing an aluminum plate; forming a mask for an anodized aluminum oxide (AAO) process on the aluminum plate; performing an anodized aluminum oxide process; filling nanopores created on the surface of the aluminum plate by performing the anodized aluminum oxide process with an insulator; and flattening the upper and lower surfaces of the aluminum plate in which nanopores are filled with an insulator to expose the aluminum under the mask for the anodized aluminum oxide process to the outside.

[0018] According to another aspect of the present invention, an interposer is provided comprising a substrate having a micro-penetrating aluminum electrode manufactured according to a method for manufacturing a substrate having a micro-penetrating aluminum electrode, the method comprising: preparing an aluminum plate; forming a mask for an anodized aluminum oxide (AAO) process on the aluminum plate; performing an anodized aluminum process; filling nanopores created on the surface of the aluminum plate by performing the anodized aluminum process with an insulator; and flattening the upper and lower surfaces of the aluminum plate in which nanopores are filled with an insulator to expose the aluminum under the mask for the anodized aluminum process to the outside.

[0019] According to another aspect of the present invention, a semiconductor device package is provided comprising: a printed circuit board; a step of preparing an aluminum plate on the printed circuit board; a step of forming a mask for an anodized aluminum oxide (AAO) process on the aluminum plate; a step of performing an anodized aluminum oxide process; a step of filling nanopores created on the surface of the aluminum plate by performing the anodized aluminum oxide process with an insulator; and a step of flattening the upper and lower surfaces of the aluminum plate in which nanopores are filled with an insulator to expose the aluminum under the mask for the anodized aluminum oxide process to the outside; an interposer comprising a substrate comprising a micro-penetrating aluminum electrode manufactured according to a method for manufacturing a substrate comprising a micro-penetrating aluminum electrode; and a semiconductor device on the interposer. Effects of the invention

[0021] According to the present invention, since an anodic aluminum oxidation process is used instead of a high-cost, long-time process such as the TSV method or the TGV method, the process time is shortened and problems such as the occurrence of pores that may occur in the plating process are eliminated, thereby providing the effect of obtaining a substrate with electrodes formed with high reliability and quality.

[0022] In addition, according to the present invention, by performing an anodic aluminum oxide process on an aluminum plate and using a portion of the aluminum plate as an electrode, it is advantageous for high-speed circuit operation with a low resistance value. Furthermore, since the thermal conductivity of the aluminum oxide substrate is excellent, heat generated during semiconductor chip operation can be released more effectively, thereby obtaining a substrate with excellent heat dissipation characteristics, which can be usefully applied in various fields such as high-performance interposers and next-generation high-integration substrates. Brief explanation of the drawing

[0024] FIGS. 1 to 4 are drawings provided to describe a method for manufacturing a substrate including a micro-penetrating electrode according to an embodiment of the present invention. FIG. 5 is a cross-sectional view of an interposer according to another embodiment of the present invention. Specific details for implementing the invention

[0025] Hereinafter, embodiments of the present invention will be described with reference to the attached drawings. However, embodiments of the present invention may be modified in various different forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art. Although there may be components in the attached drawings that are depicted to have a specific pattern or have a predetermined thickness, this is for convenience of explanation or distinction, and therefore, even if a specific pattern and a predetermined thickness are depicted, the present invention is not limited only to the features of the depicted components.

[0026] FIGS. 1 to 4 are drawings provided to describe a method for manufacturing a substrate including a micro-penetrating electrode according to an embodiment of the present invention.

[0027] A method for manufacturing a substrate including a micro-penetrating aluminum electrode according to the present invention comprises the steps of: preparing an aluminum plate; forming a mask for an anodized aluminum oxide (AAO) process on the aluminum plate; performing an anodized aluminum oxide process; filling nanopores formed on the surface of the aluminum plate by performing the anodized aluminum oxide process with an insulator; and flattening the upper and lower surfaces of the aluminum plate in which nanopores are filled with an insulator to expose the aluminum below the mask for the anodized aluminum oxide process to the outside.

[0028] In order to manufacture a substrate (100) including a micro-penetrating aluminum electrode according to the present invention, an aluminum plate (110) is prepared, wherein the aluminum plate (110) undergoes an anodic aluminum oxidation process and the remaining area can function as an electrode.

[0029] The anodic aluminum oxidation process refers to a process in which aluminum is oxidized to form regularly arranged holes of approximately 10 nm to 100 nm in size on the surface. When the anodic aluminum oxidation process is performed, nanopores (130) are formed on the surface of the aluminum plate (110) as shown in FIG. 2. That is, when the aluminum plate (110) is oxidized, a number of nanopores (130) are formed, the interior of which is an aluminum oxide layer.

[0030] The size and depth of the nanopores (130) can be controlled according to the oxidation conditions in the anodic aluminum oxidation process. Specifically, the size and depth of the nanopores (130) can be controlled according to the type of solution used during anodic oxidation, the potential difference, the reaction temperature, or the reaction time.

[0031] The nanopores (130) may include nanopores of different diameters, thereby allowing for relative control of the electrode size in the substrate (100) containing the micro-penetrating aluminum electrode. The smaller the size of the nanopores (130), the more precisely the size of the micro-penetrating aluminum electrode (110) can be controlled.

[0032] Before performing the anodic aluminum oxidation process, a mask (120) for the anodic aluminum oxidation process is formed on one side of an aluminum plate (110). To form the mask (120) for the anodic aluminum oxidation process, a masking material that can be maintained during the anodic aluminum oxidation process, such as a silicon oxide film or a silicon nitride film, is deposited on the aluminum plate (110), and then a pattern is formed on the aluminum plate (110) using a photosensitive process, screen printing, inkjet, etc. Afterwards, the masking material is patterned through a dry or wet etching method and the photoresist is removed to obtain the mask (120) for the anodic aluminum oxidation process (Fig. 1).

[0033] The mask (120) for the anodic aluminum process prevents the lower aluminum plate (110) from being oxidized during the anodic aluminum process, and the lower region of the mask (120) for the anodic aluminum process is a region that later becomes a micro-penetrating aluminum electrode. Accordingly, the size or spacing of the aluminum electrodes in the substrate (100) containing the micro-penetrating aluminum electrodes can be controlled by adjusting the size or spacing of the mask (120) for the anodic aluminum process.

[0034] For example, the width of the mask (120) for the anodic aluminum process may be 1 μm to 100 μm, and the diameter of the nanopore (130) may be 1 nm to 100 nm.

[0035] When a mask (120) for the anodic aluminum process is formed on an aluminum plate (110), the anodic aluminum process is performed.

[0036] Since the interior of the nano pore (130) is made of aluminum oxide, the interior of the nano pore (130) is filled with an insulator to form an insulating substrate. Since the size of the nano pore (130) created by the anodic aluminum oxide process is nano-sized, the insulator (140) can be filled by any one of the processes of an ALD (Atomic layer deposition) process, a PECVD (Plasma enhanced chemical vapor deposition) process, and a process of applying and filling a solution containing a material that is an insulator when solidified, and drying or solidifying it with heat or electromagnetic wave energy.

[0037] The insulator (140) may be a metal oxide. In particular, the insulator (140) may be aluminum oxide identical to aluminum oxide formed by an anodic aluminum oxide process. In this case, the substrate (100) including the micro-penetrating aluminum electrode may be an aluminum oxide substrate on which the micro-penetrating aluminum electrode is formed.

[0038] When the interior of the nanopores (130) is filled, the nanopores (130) flatten the upper and lower surfaces of the aluminum plate (110) filled with an insulator (140). The flattening process is performed until the mask (120) for the anodic aluminum process on the aluminum plate (110) is removed and the unoxidized aluminum beneath the mask (120) is exposed to the outside. The flattening process of the aluminum plate (110) can be performed through mechanical or chemical polishing.

[0039] In addition, as shown in FIG. 3, all aluminum at the bottom of the nanopores (130) of the aluminum plate (110) is removed, and the unoxidized aluminum in the substrate (100) containing the micro-penetrating aluminum electrode is contained only in the micro-penetrating aluminum electrode (110).

[0040] The micro-penetrating aluminum electrode (110) is located below the mask (120) for the anodic aluminum process on the aluminum plate (110) and is the aluminum in the unoxidized area when the anodic aluminum process is performed.

[0041] In a substrate (100) including a micro-penetrating aluminum electrode, the micro-penetrating aluminum electrode (110) is an electrode that transmits an electrical signal, and the insulator (140) functions as an insulating substrate that does not conduct electricity.

[0042] FIG. 5 is a cross-sectional view of an interposer according to another embodiment of the present invention. A substrate (100) including a micro-penetrating aluminum electrode according to the present invention includes a micro-penetrating aluminum electrode inside, so it can be used as an interposer for electrically connecting a plurality of semiconductor chips to each other or electrically connecting a semiconductor chip to a printed circuit board.

[0043] A substrate (100) including a micro-penetrating aluminum electrode can be used as an interposer by forming a redistribution layer on the upper side to electrically connect with the micro-penetrating aluminum electrode and forming a solder ball (300), etc. on the lower side.

[0044] The present invention relates to a substrate comprising a micro-penetrating aluminum electrode manufactured by performing an anodic aluminum oxidation process on an aluminum plate. The substrate comprising the micro-penetrating aluminum electrode of the present invention is a substrate in which the aluminum oxide region is used as an insulating region and the aluminum region is used as an electrode region. Since it includes an aluminum electrode rather than plating using a simple, low-cost process, it exhibits excellent performance and heat dissipation characteristics, making it useful in various fields such as high-density semiconductor packaging, interposers, and next-generation high-density substrates.

[0045] According to another aspect of the present invention, a semiconductor device package is provided comprising: a printed circuit board; a step of preparing an aluminum plate on the printed circuit board; a step of forming a mask for an anodized aluminum oxide (AAO) process on the aluminum plate; a step of performing an anodized aluminum oxide process; a step of filling nanopores created on the surface of the aluminum plate by performing the anodized aluminum oxide process with an insulator; and a step of flattening the upper and lower surfaces of the aluminum plate in which nanopores are filled with an insulator to expose the aluminum under the mask for the anodized aluminum oxide process to the outside; an interposer comprising a substrate comprising a micro-penetrating aluminum electrode manufactured according to a method for manufacturing a substrate comprising a micro-penetrating aluminum electrode; and a semiconductor device on the interposer.

[0046] Although embodiments of the present invention have been described above, those skilled in the art may modify and change the present invention in various ways by adding, changing, deleting, or adding components, etc., without departing from the spirit of the invention as described in the claims, and such modifications and changes are also to be included within the scope of the rights of the present invention. Explanation of the symbols

[0048] 100: Aluminum oxide substrate 110: Aluminum plate 120: Mask for aluminum anodizing process 130: Nanopores 140: Insulator 200: Circuit board 300: Solder ball

Claims

Claim 1 A method for manufacturing a substrate including a micro-penetrating aluminum electrode comprising: a step of preparing an aluminum plate; a step of forming a mask for an anodized aluminum oxide (AAO) process on the aluminum plate; a step of performing an anodized aluminum oxide process; a step of filling nanopores created on the surface of the aluminum plate by performing the anodized aluminum oxide process with an insulator; and a step of flattening the upper and lower surfaces of the aluminum plate in which nanopores are filled with an insulator to expose the aluminum below the mask for the anodized aluminum oxide process to the outside, wherein the insulator is a metal oxide, and the step of filling nanopores created on the surface of the aluminum plate with an insulator is performed by either an ALD (Atomic layer deposition) process or a PECVD (Plasma enhanced chemical vapor deposition) process, and is characterized in that nanopores of different diameters are formed. Claim 2 A method for manufacturing a substrate including a micro-penetrating aluminum electrode according to claim 1, wherein the aluminum plate under the mask for the anodic aluminum oxidation process is not oxidized and becomes a micro-penetrating aluminum electrode. Claim 3 A method for manufacturing a substrate including a micro-penetrating aluminum electrode according to claim 1, characterized in that the size of the micro-penetrating aluminum electrode varies depending on the size of the mask for the anodic aluminum oxidation process. Claim 4 A method for manufacturing a substrate comprising a micro-penetrating aluminum electrode according to claim 1, wherein the mask for the anodic aluminum oxidation process comprises at least one of silicon oxide and silicon nitride. Claim 5 delete Claim 6 A method for manufacturing a substrate comprising a micro-penetrating aluminum electrode, characterized in that, in claim 1, the insulator is aluminum oxide. Claim 7 delete Claim 8 A method for manufacturing a substrate comprising a micro-penetrating aluminum electrode according to claim 1, characterized in that the width of the mask is 1 μm to 100 μm and the diameter of the nanopore is 1 nm to 100 nm. Claim 9 delete Claim 10 A substrate comprising a micro-penetrating aluminum electrode manufactured according to the method for manufacturing a substrate comprising a micro-penetrating aluminum electrode of claim 1. Claim 11 An interposer comprising a substrate including a micro-penetrating aluminum electrode of claim 10. Claim 12 A semiconductor device package comprising: a printed circuit board; an interposer according to claim 11 on the printed circuit board; and a semiconductor device on the interposer.

Images