Method for forming relief pattern using a double shadow mask and protection layer, and method for manufacturing a device through the formation of relief pattern
The double shadow mask and protective layer method allows for precise embossed pattern formation and improved electrode deposition, addressing the limitations of existing methods by reducing costs and enhancing electrical performance in semiconductor devices.
Patent Information
- Authority / Receiving Office
- KR · KR
- Patent Type
- Patents
- Current Assignee / Owner
- KOREA RES INST OF STANDARDS & SCI
- Filing Date
- 2024-11-26
- Publication Date
- 2026-07-15
AI Technical Summary
Existing methods for forming fine patterns in semiconductor device fabrication, such as e-beam lithography and photolithography, are costly and time-consuming, while shadow mask-based stencil lithography struggles with excessive etching and difficulty in forming precise relief patterns.
A method using a double shadow mask and protective layer to form embossed patterns, where two masks are applied sequentially to control pattern width and length, and an edge contact electrode deposition process is used to improve electrical performance.
Enables precise control of pattern dimensions and reduces contact resistance, enhancing the electrical performance and stability of high-resolution electronic devices.
Smart Images
Figure 112024130396552-PAT00002_ABST
Abstract
Description
Technology Field
[0001] The present invention relates to a method for forming a raised pattern using a double shadow mask and a protective layer, and more specifically, to a method for forming a raised pattern that is advantageous for forming a pattern that is more accurate and precise than a cathode pattern while preventing excessive etching by applying a protective layer to a dry etching process using a shadow mask, and a method for manufacturing a device through the same. Background Technology
[0003] Methods for forming circuit patterns or thin film patterns for semiconductor device fabrication include e-beam lithography, photolithography, and stencil lithography.
[0004] While beam lithography and photolithography enable the implementation of fine patterns, they have disadvantages such as high costs and long processing times.
[0005] In other words, in the case of photolithography, which is the most widely used method for fabricating electronic devices, the process is complex and time-consuming, involving steps such as photoresist coating, UV exposure, and development. Furthermore, because the equipment required for exposure and the photoresist are expensive, the process costs are high.
[0006] If the photolithography process is replaced with a shadow mask-based stencil lithography method, the production time can be reduced to one-third, and process costs can also be reduced by using reusable holders and shadow masks.
[0007] However, there is a limitation in that it is difficult to implement the pattern because the material is excessively etched due to the gap between the shadow mask and the patterning target material (e.g., thin film) during the fabrication process of devices requiring patterning.
[0008] To solve these problems, Korean registered patent No. 10-2102308, "Patterning method using a protective layer and method for manufacturing a device using the same," discloses a technology that protects the material during a dry etching process by applying a protective layer between the patterning target material and the shadow mask, and also prevents excessive etching by minimizing the gap between the shadow mask and the material.
[0009] However, this method is a technique for forming intaglio patterns, and due to the limitations of intaglio patterns, it is difficult to accurately form a pattern with the desired width and length.
[0010] In order to form fine patterns accurately and precisely, relief patterns are more advantageous than intaglio patterns, but the technology of the above-mentioned Korean registered patent No. 10-2102308 is a technology for forming intaglio patterns, so it is difficult to apply it to forming relief patterns. Prior art literature
[0012] (1) Korean Registered Patent No. 10-2102308 (Title: Patterning method using a protective layer, and method for manufacturing a device using the same, Date of publication: September 20, 2019) The problem to be solved
[0013] Accordingly, the present invention was devised to solve the above-mentioned problems, and aims to provide a method for forming a raised pattern using a double shadow mask and a protective layer, which enables the formation of a raised pattern rather than an intaglio pattern using a shadow mask-based dry etching method.
[0014] In addition, another objective of the present invention is to provide a method for manufacturing a device using the method of forming an embossed pattern using the double shadow mask and protective layer. means of solving the problem
[0016] To achieve the above objective, a method for forming an embossed pattern using a double shadow mask and a protective layer according to the present invention comprises the steps of: forming a protective layer on a material to be patterned; fixing a first shadow mask on the protective layer; etching the material to be patterned by performing a dry etching process; removing the first shadow mask and fixing a second shadow mask; etching the material to be patterned by performing a dry etching process; and removing the second shadow mask and removing the protective layer.
[0018] The first shadow mask is configured to determine the width (or length) of the embossed pattern, and the second shadow mask may be configured to determine the length (or width) of the embossed pattern.
[0019] The above protective layer may be composed of a polymer material capable of preventing etching of the area covered by the first shadow mask and the second shadow mask.
[0021] The first shadow mask and the second shadow mask above may be composed of a stencil mask made of a metal plate having a pattern formed thereon.
[0023] A method for manufacturing a device through the formation of an embossed pattern according to the present invention comprises the steps of: forming a protective layer on a material to be patterned; fixing a first shadow mask on the protective layer; etching the material to be patterned by performing a dry etching process; removing the first shadow mask and fixing a second shadow mask; etching the material to be patterned by performing a dry etching process; removing the second shadow mask and removing the protective layer; and performing an electrode deposition process to deposit an electrode on the material to be patterned.
[0025] At this time, the electrode deposition process may be configured such that the patterning target material and the electrode material come into contact in a horizontal direction.
[0026] The electrode deposition process described above may comprise the steps of: forming a protective layer on the patterning target material; fixing a mask for forming an electrode deposition pattern on the protective layer; performing a dry etching process to etch up to the patterning target material; removing the mask for forming an electrode deposition pattern; depositing an electrode; and removing the protective layer and the electrode deposited on the protective layer. Effects of the invention
[0028] The present invention allows for the formation of an embossed pattern while using shadow mask-based dry etching by sequentially applying two masks, and enables precise control of the width and length of the pattern by optimizing the pattern spacing and etching conditions of the two masks.
[0029] In addition, the electrode deposition process for depositing electrodes can be configured to form electrodes using an edge contact method. Since the edge contact method allows current to flow from the side, thereby lowering contact resistance and maintaining current flow efficiently, it can significantly improve the electrical performance of the device.
[0030] Accordingly, since the precision and electrical connectivity of the pattern can be improved, it is possible to provide superior performance and stability in the manufacturing of high-resolution electronic devices that require fine patterns and precise electrode formation. Brief explanation of the drawing
[0032] Figure 1 is an example of forming an intaglio pattern using a shadow mask, FIG. 2 is an embodiment of a method for forming an embossed pattern using a double shadow mask and a protective layer according to the present invention. FIG. 3 is an example of forming the width of a channel material using a first shadow mask, FIG. 4 is an example in which an embossed pattern is formed by forming the length of a channel material using a second shadow mask. FIG. 5 is an embodiment of a method for manufacturing a device through the formation of an embossed pattern according to the present invention. FIG. 6 is an example of an electrode deposition process, Figure 7 is a schematic diagram of an electrode deposition process using edge contact technology. FIG. 8 is an example of an actual implementation of the first shadow mask and the second shadow mask, FIG. 9 is an example of a patterning result image of a channel material, Figure 10 is an example of a result image of an electrode deposition process. Specific details for implementing the invention
[0033] The present invention is capable of various modifications and may have various embodiments; specific embodiments are illustrated in the drawings and described in detail in the detailed description. However, this is not intended to limit the present invention to specific embodiments, and it should be understood that it includes all modifications, equivalents, and substitutions that fall within the spirit and scope of the present invention. In describing the present invention, detailed descriptions of related prior art are omitted if it is determined that such detailed descriptions may obscure the essence of the present invention.
[0034] The terms used in this application are used merely to describe specific embodiments and are not intended to limit the invention. The singular expression includes the plural expression unless the context clearly indicates otherwise. In this application, terms such as "comprising" or "having" are intended to specify the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.
[0035] Terms such as "first," "second," etc., may be used to describe various components, but said components should not be limited by said terms. These terms are used solely for the purpose of distinguishing one component from another.
[0037] Generally, when performing patterning using a polymer protective layer, an intaglio pattern is formed during the etching process.
[0038] FIG. 1 shows an example of a method for forming an intaglio pattern using a shadow mask, wherein a polymer protective layer (130) is formed on a patterning target material (120) on a substrate (110), and a shadow mask (140) is fixed on the polymer protective layer (130) (Fig. 1a).
[0039] Then, after performing a dry etching process (Fig. 1b), the shadow mask (140) is removed and the polymer protective layer (130) is removed, and an intaglio pattern (191) is formed.
[0040] That is, only the part covered by the shadow mask (140) on the surface of the patterning target material (120) is left, and the remaining part is etched, so it appears in the form of an intaglio pattern.
[0041] However, this intaglio pattern method has limitations in that it is difficult to obtain fine pattern sizes and precision because there are constraints on controlling the length and width of the etched pattern.
[0043] The present invention enables the formation of an embossed pattern by sequentially applying two shadow masks (a first shadow mask and a second shadow mask), and the first shadow mask and the second shadow mask can be determined for various uses.
[0044] As an example, it can be configured to determine the width of the embossed pattern using a first shadow mask and determine the length of the embossed pattern using a second shadow mask.
[0045] As another example, the length of the embossed pattern can be determined using a first shadow mask, and the width of the embossed pattern can be determined using a second shadow mask.
[0046] The following description describes an example in which the width of the embossed pattern is determined using a first shadow mask and the length of the embossed pattern is determined using a second shadow mask, but it is not limited thereto.
[0047] The first shadow mask and the second shadow mask can be configured in various ways.
[0048] As a specific example, the first shadow mask and the second shadow mask may be composed of a stencil mask made of a metal plate with a pattern formed thereon, but are not limited thereto.
[0050] FIG. 2 shows an example of a method for forming an embossed pattern using a double shadow mask and a protective layer according to the present invention, FIG. 3 shows an example explaining the process of forming the width of a material to be patterned, and FIG. 4 shows an example explaining the process of forming the length of a material to be patterned.
[0051] First, a protective layer (130) is formed on a patterning target material (120) on a substrate (S211), and a first shadow mask (141) is fixed on the protective layer (130) (S212) (Fig. 3a).
[0052] At this time, the protective layer (130) can be configured in various ways.
[0053] As an example, it is composed of a polymer material that can prevent etching of the area covered by the first shadow mask (141).
[0054] That is, the protective layer (130) is preferably composed of a polymer material that dissolves in organic solvents with almost no residue, such as PMMA and PVP, but is not limited thereto.
[0055] In addition, the protective layer (130) is more effective for pattern implementation as it has stronger resistance to dry etching using plasma, and a uniform polymer protective layer can be formed using an appropriate method such as a spin coating method.
[0056] When fixing the first shadow mask (141), the target substrate (110) coated with the protective layer (130) can be attached to the holder, and the first shadow mask (141) can be mounted and fixed.
[0058] Then, a dry etching process is performed to etch the patterning target material (S213).
[0059] In this process, the patterning target material (120) is etched so that only the part blocked by the first shadow mask (141) remains (Figs. 3b, 3c).
[0060] That is, the part covered by the first shadow mask (141) forms the width of the channel to be formed.
[0061] The dry etching gas used for patterning in step S213 may be O2, CF4, Ar, or a mixture of two or more of these, but the type of gas and dry etching conditions may be set in various ways depending on the patterning target material to be etched, and are not limited thereto.
[0063] Now, the first shadow mask (141) is removed, and the second shadow mask (142) is fixed (S214) (Fig. 4a).
[0064] If the first shadow mask (141) is used to determine the width of the embossed pattern, the second shadow mask (142) can be used to determine the length of the embossed pattern.
[0065] The second shadow mask (142) covers a specific area different from the first shadow mask (141), thereby adjusting the length of the channel.
[0066] Here, the important point is that the first shadow mask (141) and the second shadow mask (142) are not used simultaneously, but must be applied sequentially to form the desired embossed pattern.
[0067] Now, a dry etching process is performed to etch the patterning target material (120) (S215) (Fig. 4b).
[0068] Then, the second shadow mask (142) is removed, and the remaining protective layer (130) is also removed (S216).
[0069] Accordingly, an embossed pattern (123) of a patterning target material (130) having a desired width and length is formed on the substrate (110) (Figs. 4c, 4d).
[0071] FIG. 5 shows an embodiment of a method for manufacturing a device through the formation of an embossed pattern according to the present invention, comprising the steps of: forming a protective layer on a material to be patterned (S211); fixing a first shadow mask on the protective layer (S212); etching the material to be patterned by performing a dry etching process (S213); removing the first shadow mask and fixing a second shadow mask (S214); etching the material to be patterned by performing a dry etching process (S215); removing the second shadow mask and removing the protective layer (S216); and performing an electrode deposition process to deposit an electrode on the material to be patterned (S217).
[0073] At this time, steps S211 to S216 can be configured in the same way as the method for forming an embossed pattern using a double shadow mask and a protective layer described above, so a redundant description will be omitted.
[0075] In step S217, the electrode deposition process is a process of depositing an electrode on a formed embossed pattern (patterning target material), and can be configured in various ways.
[0076] A general electrode formation method involves depositing an electrode pattern on top of a raised pattern so that the patterned material and the electrode material come into contact in a vertical direction.
[0077] However, when performing dry etching using a polymer protective layer, the process of etching only the polymer protective layer while leaving only the underlying patterning target material is challenging.
[0078] Considering these points, the electrode deposition process can be configured so that the patterning target material and the electrode material come into contact in a horizontal direction using an edge contact method.
[0079] In particular, the edge contact method has the advantage of allowing current to flow from the side, thereby lowering contact resistance and maintaining current flow efficiently, which can significantly improve the electrical performance of the device.
[0081] Figure 6 shows an example of an electrode deposition process.
[0082] First, a protective layer (130) is coated on a patterning target material (123) that has been patterned in relief (S217-1), and a mask (143) for forming an electrode deposition pattern is fixed on the protective layer (130) (S127-2) (Fig. 7a). At this time, the coating of the protective layer (130) can be performed not only on the patterning target material (123) but also over the entire surrounding area.
[0083] The protective layer (130) can be configured in various ways, and as described above, it is preferable to be composed of a polymer material.
[0084] When fixing the mask (143) for forming the electrode deposition pattern, the target substrate (110) coated with the protective layer (130) can be attached to the holder, and the mask (143) for forming the electrode deposition pattern can be mounted and fixed.
[0085] Now, a dry etching process is performed to etch the patterning target material (120) (Fig. 7b), and then the mask (143) for forming the electrode deposition pattern is removed ((S217-3, S217-4).
[0086] Then, an electrode (160) is deposited (S217-5) (Fig. 7c).
[0087] Electrode deposition can be achieved through various deposition methods, such as E-beam evaporator, thermal evaporator, and sputtering.
[0088] Then, when the protective layer (130) and the electrode deposited on the protective layer are removed, a device is formed in which the embossed pattern and the electrode material are in contact in a horizontal direction (S217-6) (Fig. 7d).
[0089] At this time, the method for removing the polymer protective layer can be configured in various ways.
[0090] For example, the polymer protective layer can be removed using organic solvents capable of dissolving it, such as acetone or dichloromethane, or by heating the organic solvent below its boiling point or by annealing, but is not limited to these methods.
[0092] <Experimental example >
[0093] (1) Prepare a two-dimensional material uniformly synthesized by the MOCVD (Metal Organic Chemical Vapor Deposition) method (two-dimensional material: MoS2, substrate: SiO2 / Si)
[0094] (2) Spin coating of a polymer solution to form a channel pattern on the prepared 2D material (coating solvent PMMA 950 A2, KAYAKU)
[0095] (3) Perform baking at 80°C for 3 minutes to remove residual solvent and cure.
[0096] (4) After mounting the first shadow mask for channel width patterning, fix the holder cover.
[0097] (5) Pattern formation by performing dry etching (RIE: Reactive Ion Etching) using Ar gas
[0098] (6) After removing the first shadow mask for channel width patterning, the second shadow mask for channel length patterning is mounted and fixed - FIG. 8 is an example of an actual implementation of the shadow mask.
[0099] (7) Pattern formation by performing dry etching (RIE) using Ar gas
[0100] (8) After removing the second shadow mask for channel length patterning, the sample is immersed in a 60°C acetone solution to remove the polymer layer - FIG. 9 shows the resulting image of a channel formed into an embossed pattern (123) after proceeding to this process.
[0101] (9) To form an electrode deposition pattern, spin coating of a polymer solution was performed (coating solvent PMMA 950 A4, KAYAKU)
[0102] (10) Perform baking at 80°C for 3 minutes to remove residual solvent and cure.
[0103] (11) Mount a mask for forming an electrode deposition pattern and fix the holder cover.
[0104] (12) Pattern formation by performing dry etching (RIE) using Ar gas
[0105] (13) Electrode deposition after removing mask for forming electrode deposition pattern
[0106] (14) The sample is immersed in room temperature acetone to remove the polymer layer and the electrode deposited on the polymer layer - Figure 10a shows an image after etching the electrode deposition pattern, and Figures 10b and c show images after electrode deposition.
[0108] Although the present invention has been illustrated and described above in relation to specific preferred embodiments, it is obvious to those skilled in the art that the present invention may be modified and varied without departing from the technical features or scope of the invention as defined by the following claims. Explanation of the symbols
[0110] 110: Substrate 120. 123: Material to be patterned 130: Protection layer 140~143: Shadow Mask 160: Electrode
Claims
Claim 1 A method for forming an embossed pattern using a double shadow mask and a protective layer, comprising the steps of: forming a protective layer on a material to be patterned; fixing a first shadow mask on the protective layer; etching the material to be patterned by performing a dry etching process; removing the first shadow mask and fixing a second shadow mask; etching the material to be patterned by performing a dry etching process; and removing the second shadow mask and removing the protective layer, wherein the first shadow mask is configured to determine one of the width and length of the embossed pattern, and the second shadow mask is configured to determine the width and length of the embossed pattern that is not determined by the first shadow mask. Claim 2 delete Claim 3 delete Claim 4 A method for forming an embossed pattern using a double shadow mask and a protective layer, wherein, in claim 1, the protective layer is composed of a polymer material capable of preventing etching of the area covered by the first shadow mask and the second shadow mask. Claim 5 A method for forming an embossed pattern using a double shadow mask and a protective layer, wherein, in claim 1, the first shadow mask and the second shadow mask are stencil masks made of a metal plate having a pattern formed thereon. Claim 6 A method for manufacturing a device through the formation of a positive pattern, comprising the steps of: forming a protective layer on a material to be patterned; fixing a first shadow mask on the protective layer; etching the material to be patterned by performing a dry etching process; removing the first shadow mask and fixing a second shadow mask; etching the material to be patterned by performing a dry etching process; removing the second shadow mask and removing the protective layer; and performing an electrode deposition process to deposit an electrode on the material to be patterned, wherein the first shadow mask is configured to determine one of the width and length of the positive pattern, and the second shadow mask is configured to determine the width and length of the positive pattern that is not determined by the first shadow mask. Claim 7 In claim 6, the electrode deposition process is configured such that the patterning target material and the electrode material come into contact in a horizontal direction, a method for manufacturing a device through the formation of a raised pattern. Claim 8 In claim 6, the electrode deposition process comprises the steps of: forming a protective layer on the patterning target material; fixing a mask for forming an electrode deposition pattern on the protective layer; performing a dry etching process to etch up to the patterning target material; removing the mask for forming an electrode deposition pattern; depositing an electrode; and removing the protective layer and the electrode deposited on the protective layer, a method for manufacturing a device through the formation of a raised pattern.