AlN Heater for Semiconductor Wafer and Manufacturing Method Thereof
A double coating layer of MoSi₂/YSZ and SiC/BN on AlN heaters addresses the durability and corrosion issues, improving resistance to thermal and mechanical stress and enhancing heat transfer efficiency.
Patent Information
- Application Number
- KR1020240189995
- Authority / Receiving Office
- KR · KR
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2024-12-18
- Publication Date
- 2026-08-03
- Estimated Expiration
- 2044-12-18
AI Technical Summary
AlN heaters used in semiconductor wafer processing suffer from surface damage and plasma uniformity defects due to reaction with corrosive gases like NF3 and ClF3, leading to aluminum fluoride contamination and reduced durability.
A double coating layer is applied to the AlN heater, comprising a first layer of molybdenum disilicide (MoSi₂) and yttria-stabilized zirconia (YSZ) followed by a second layer of silicon carbide (SiC) and boron nitride (BN), formed through plasma coating and chemical vapor deposition, to enhance corrosion resistance and thermal stability.
The coating layers significantly improve the AlN heater's durability and resistance to thermal and mechanical stress, preventing peeling and cracking, while efficiently blocking corrosive gases and enhancing heat transfer.