Reagent for removing oxygen from metal oxyhalide precursors in the thin film deposition process

Oxyphilic reagents effectively deoxygenate metal oxyhalides at lower temperatures, producing high-purity metal or metal nitride films, addressing the challenges of incomplete deoxygenation and contamination in ALD and CVD processes.

KR102999515B1Active Publication Date: 2026-08-03
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Patent Information

Application Number
KR1020237034015
Authority / Receiving Office
KR · KR
Patent Type
Patents
Priority Date
2021-03-05
Filing Date
2022-03-04
Publication Date
2026-08-03
Estimated Expiration
2042-03-04

AI Technical Summary

Technical Problem

Existing methods for removing oxygen from metal oxyhalide precursors in ALD and CVD processes face challenges, particularly at temperatures below 500°C, leading to incomplete deoxygenation and contamination of deposited films, which is problematic for applications like Mo films in middle-of-line or backend-of-the-line processes.

Method used

The use of oxyphilic reagents, such as Group 14 or Group 15 halides and oxides, to react with metal oxyhalides at lower temperatures (50°C to 500°C) to form metal or metal nitride films with low oxygen content, ensuring complete deoxygenation and purity.

Benefits of technology

This method achieves high-purity metal or metal nitride films with oxygen impurities below 1% and silicon impurities at 0%, while maintaining deposition temperatures below 500°C, suitable for advanced semiconductor applications.

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Abstract

A method for gas-phase deposition of a metal or metal nitride film on the surface of a substrate comprises the steps of: reacting a metal-oxo or metal oxyhalide precursor with an oxyphilic reagent in a reactor containing the substrate to deoxygenate the metal-oxo or metal oxyhalide precursor; and forming a metal or metal nitride film on the substrate through a vapor deposition process. The substrate is exposed to the metal oxyhalide precursor and the oxyphilic reagent simultaneously or sequentially. After deoxygenation, the substrate is sequentially exposed to a reducing agent.
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