Semiconductor substrate heating device, semiconductor device and temperature control method

The semiconductor substrate heating device addresses the high costs and complexity of conventional temperature control methods by employing compensation units and separators to achieve uniform temperature control with minimal manufacturing and maintenance expenses.

KR102999635B1Active Publication Date: 2026-08-03KINGSEMI CO LTD
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Patent Information

Application Number
KR1020227028534
Authority / Receiving Office
KR · KR
Patent Type
Patents
Current Assignee / Owner
Filing Date
2022-06-29
Publication Date
2026-08-03
Estimated Expiration
2042-06-29

AI Technical Summary

Technical Problem

Conventional methods for improving temperature uniformity in semiconductor substrate heating devices by increasing heater partitions lead to increased development costs, complex layouts, and decreased heater yield, resulting in higher manufacturing and maintenance expenses.

Method used

A semiconductor substrate heating device with a heating chamber, a main heating unit, a compensation control unit, and temperature compensation units that adjust temperature uniformly without complex lead wire designs, using auxiliary temperature controllers and separators to minimize manufacturing and maintenance costs.

Benefits of technology

The device effectively controls temperature uniformity with reduced costs by preventing complex lead wire designs and facilitating easy assembly and maintenance, while ensuring precise temperature adjustments through compensation units and control units.

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Abstract

The present invention provides a semiconductor substrate heating device comprising a heating chamber, a main heating unit, a compensation control unit, and at least one temperature compensation unit. A compensation control unit and a plurality of temperature compensation units are installed inside the heating chamber of the semiconductor substrate heating device, and the upper surface of the compensation control unit is installed corresponding to the bottom surface of the heating plate. A plurality of temperature compensation units are installed between the heating plate and the compensation control unit and are communication-connected to the compensation control unit, and a plurality of temperature control compensation areas on the bottom surface of the heating plate are installed in a one-to-one correspondence. This prevents complex lead line design and, by performing temperature compensation adjustment for the temperature control compensation areas under the control of the compensation control unit, the temperature uniformity of the semiconductor substrate can be effectively controlled with minimal manufacturing and maintenance costs.
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