Additives for improving particle dispersion in CMP slurries
By using a C2-C10 alkylenediol dispersant at a pH of 2 to 6 in CMP slurries, the abrasive particle aggregation issue is addressed, resulting in reduced micro-scratches and improved surface quality during polishing.
Patent Information
- Application Number
- KR1020217033901
- Authority / Receiving Office
- KR · KR
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2019-03-25
- Filing Date
- 2020-03-23
- Publication Date
- 2026-08-05
- Estimated Expiration
- 2040-03-23
AI Technical Summary
Existing abrasive compositions in chemical-mechanical polishing (CMP) slurries suffer from abrasive particle aggregation, leading to increased particle sizes and micro-scratches on polished surfaces, which fail to meet stringent quality requirements.
Incorporating a dispersant, specifically a linear or branched C2-C10 alkylenediol, into the CMP slurry composition at a pH of 2 to 6, stabilizes abrasive particles such as alumina or colloidal silica, preventing aggregation and maintaining a consistent particle size.
The solution enhances abrasive stability, reducing micro-scratches and improving substrate surface quality by maintaining a stable particle size distribution over time, particularly in polishing processes involving tungsten and silicon oxide layers.