Method and apparatus for identifying x-ray and UV signal

Abstract

The present invention relates to a method and apparatus for identifying X-ray and UV signals, wherein the method for identifying X-ray and UV signals is a method for identifying X-ray and UV using a compound semiconductor-based photodetector, comprising: (a) a step of irradiating light onto the photodetector and measuring the current and voltage of the photodetector through a plurality of electrodes provided in the photodetector; and (b) a step of identifying the X-ray and the UV by analyzing the current and voltage values ​​of the photodetector, wherein in step (b), the X-ray and the UV can be identified through a change in the charge neutral point (CNP), which is a voltage point where the minimum value of the current appears on the current-voltage curve.

Description

Technology Field

[0001] The present invention relates to a method and apparatus for distinguishing X-ray and UV signals. More specifically, the present invention relates to a method and apparatus for distinguishing X-ray and UV signals using a compound semiconductor-based photodetector. Background Technology

[0002] Compound semiconductors are semiconductor materials with wide band gaps, such as Ga2O3, GaN, AlGaN, and SiC, and are utilized as materials for photodetectors capable of detecting light in the X-ray and UV regions.

[0003] Conventional X-ray detectors have been fabricated using materials such as a-Se, HgI2, PbI2, CdTe, CdZnTe, PbO, TlBr, and a-Si, while UV detectors have been fabricated using materials such as GaN, AlGaN, and SiC.

[0004] However, conventional X-ray and UV detectors determined the presence or absence of light based on changes in photocurrent values. But since both wavelengths cause changes in photocurrent values, it was impossible to distinguish whether the incident wavelength was X-ray or UV.

[0005] In addition, there were difficulties in using different materials to detect two wavelengths of light or in identifying and detecting each wavelength separately.

[0006] The technology forming the background of the present invention is disclosed in Korean Registered Patent Publication No. 10-1654140. The problem to be solved

[0007] The present invention aims to solve the problems of the aforementioned prior art by providing a method and apparatus for identifying X-ray and UV signals that can effectively distinguish and identify X-ray and UV signals using a compound semiconductor-based photodetector.

[0008] However, the technical problems that the embodiments of the present invention aim to solve are not limited to the technical problems described above, and other technical problems may exist. means of solving the problem

[0009] As a technical means for achieving the above-mentioned technical problem, a method for identifying X-ray and UV signals according to the first aspect of the present invention is a method for identifying X-ray and UV using a compound semiconductor-based photodetector, comprising: (a) a step of irradiating light onto the photodetector and measuring the current and voltage of the photodetector through a plurality of electrodes provided in the photodetector; and (b) a step of identifying the X-ray and the UV by analyzing the current and voltage values ​​of the photodetector, wherein in step (b), the X-ray and the UV can be identified through a change in the charge neutral point (CNP), which is a voltage point where the minimum value of the current appears in the current-voltage curve.

[0010] In addition, the compound semiconductor may include at least one of Ga2O₃, GaN, AlGaN, and SiC.

[0011] In addition, the above step (b) can distinguish between the X-ray and the UV based on the change in the charge neutrality point due to the ionization of atoms of the compound semiconductor when the light irradiated in the above step (a) is an X-ray.

[0012] Additionally, in step (b), if the charge neutral point changes, it can be determined that the light irradiated in step (a) is X-ray, and if the charge neutral point does not change, it can be determined that the light irradiated in step (a) is UV.

[0013] Additionally, in step (b), if the charge neutral point moves in a negative direction, it can be determined that the light irradiated in step (a) is an X-ray.

[0014] In addition, the method for identifying X-ray and UV signals may further include (c) a step of quantitatively determining the X-ray energy intensity by analyzing the change in the charge neutral point and the change pattern according to the X-ray energy intensity and irradiation time.

[0015] Additionally, the above change pattern may include a pattern in which the change in the charge neutral point increases as the X-ray energy intensity decreases, and a pattern in which the amount of change in the charge neutral point increases and then decreases as the X-ray irradiation time increases.

[0016] In addition, the photodetector may include at least one structure among a vertical structure in which the compound semiconductor is disposed between the plurality of electrodes and a horizontal structure in which the plurality of electrodes are disposed on one side of the compound semiconductor.

[0017] In addition, the compound semiconductor can form a device structure in which it is joined with at least one heterogeneous material among a-Se, HgI2, PbI2, CdTe, CdZnTe, PbO, TlBr, and a-Si.

[0018] In addition, the compound semiconductor may be configured to form a device structure in which it is joined with at least one heterogeneous material among SiO2GaN, SiC, and diamond.

[0019] In addition, the compound semiconductor may be doped with at least one atom selected from Si, Sn, Ge, Mg, Fe, In, and Al.

[0020] Meanwhile, an X-ray and UV signal identification device according to an aspect of the present invention is a device for identifying X-rays and UV using a compound semiconductor-based photodetector, and may include: the photodetector; a measuring unit that irradiates light onto the photodetector and measures the current and voltage of the photodetector through a plurality of electrodes provided on the photodetector; and an identification unit that identifies the X-rays and UV by analyzing the current and voltage values ​​of the photodetector.

[0021] In addition, the X-ray and UV signal identification device may further include a judgment unit that quantitatively determines the X-ray energy intensity by analyzing the change in the charge neutral point and the change pattern according to the X-ray energy intensity and irradiation time.

[0022] The means for solving the problem described above are merely exemplary and should not be interpreted as intended to limit the present invention. In addition to the exemplary embodiments described above, additional embodiments may exist in the drawings and the detailed description of the invention. Effects of the invention

[0023] According to the solution to the problem of the present invention described above, there is an effect of clearly distinguishing and identifying X-ray and UV signals using a compound semiconductor-based photodetector through a signal distinction method utilizing a change in the charge neutral point.

[0024] However, the effects obtainable from this invention are not limited to those described above, and other effects may exist. Brief explanation of the drawing

[0025] FIG. 1 is a simplified flowchart of a method for identifying X-ray and UV signals according to the first aspect of the present invention. FIG. 2 is a diagram illustrating the structure of a compound semiconductor-based photodetector in the first aspect of the present invention. FIG. 3 is a drawing for explaining that, in the first aspect of the present invention, a compound semiconductor is configured to form a device structure in which it is joined with a heterogeneous material. FIG. 4 is a diagram illustrating the change in charge neutrality point through the change in current-voltage characteristics of a compound semiconductor-based photodetector due to X-ray and UV irradiation in the first aspect of the present invention. FIG. 5 is a diagram illustrating the ionization of atoms within a compound semiconductor by X-ray irradiation in the first aspect of the present invention. Figure 6 is a diagram illustrating the process of inner shell electron emission due to the ionization of atoms of a compound semiconductor during X-ray irradiation in the first aspect of the present invention. Figure 7 is a diagram illustrating the difference in the amount of change of the charge neutral point according to the X-ray energy intensity in the first aspect of the present invention. FIGS. 8 and 9 are drawings illustrating the pattern of change of the charge neutral point as the X-ray irradiation time increases in the first aspect of the present invention. FIG. 10 is a drawing for explaining the configuration of an X-ray and UV signal identification device according to the second aspect of the present invention. Specific details for implementing the invention

[0026] Embodiments of the present invention are described below with reference to the attached drawings to enable those skilled in the art to easily implement the invention. However, the present invention may be embodied in various different forms and is not limited to the embodiments described herein. Furthermore, in order to clearly explain the present invention in the drawings, parts unrelated to the explanation have been omitted, and similar parts throughout the specification are denoted by similar reference numerals.

[0027] Throughout this specification, when a part is described as being "connected" to another part, this includes not only cases where they are "directly connected," but also cases where they are "electrically connected" or "indirectly connected" with other elements interposed between them.

[0028] Throughout the entire specification, when a component is described as being located "on," "on top," "on top," "under," "on bottom," or "on bottom" of another component, this includes not only cases where the component is in contact with the other component but also cases where another component exists between the two components.

[0029] Throughout this specification, when a part is described as "comprising" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.

[0030] The present invention relates to a method and apparatus for distinguishing X-ray and UV signals. Specifically, the present invention relates to a method and apparatus for distinguishing X-ray and UV signals using a compound semiconductor-based photodetector.

[0031] Hereinafter, a method for identifying X-ray and UV signals according to the first aspect of the present invention (hereinafter referred to as "the present method(S)") will be described.

[0032] FIG. 1 is a simplified flowchart of a method for identifying X-ray and UV signals according to the first aspect of the present invention.

[0033] The present method (S) is a method for distinguishing X-rays and UV rays using a photodetector (110) based on a compound semiconductor (111).

[0034] Here, the compound semiconductor (111) may include at least one of Ga2O3, GaN, AlGaN and SiC.

[0035] The compound semiconductor (111) is a semiconductor material having a wide bandgap and can be used as a material for a photodetector capable of detecting light in the X-ray and UV regions.

[0036] That is, the present method (S) can enable precise measurement of both X-ray and UV wavelength light with high sensitivity by utilizing a compound semiconductor-based photodetector (110). For example, the present method (S) can be applied to various industrial and security fields, such as radiation monitoring sensors in space and aviation environments, real-time power measurement of X-ray-based equipment, non-destructive quality inspection, fire detection and X-ray emission verification in X-ray-based facilities with restricted access.

[0037] Referring to FIG. 1, the present method (S) may include a step (S1) of irradiating light onto a photodetector (110) and measuring the current and voltage of the photodetector (110) through a plurality of electrodes (112) provided in the photodetector (110).

[0038] In other words, in step S1, light is irradiated onto the photodetector (110), and the current and voltage of the photodetector (110) can be measured through a plurality of electrodes (112) provided in the photodetector (110).

[0039] FIG. 2 is a diagram illustrating the structure of a compound semiconductor-based photodetector in the first aspect of the present invention.

[0040] Specifically, FIG. 2 is a schematic diagram showing various structural forms of a photodetector (110) in which a compound semiconductor (111) and a plurality of electrodes (112) are arranged, and is a diagram showing a vertical type (see FIG. 2 (a)) and a horizontal type structure (see FIG. 2 (b)).

[0041] At this time, referring to FIG. 2, the photodetector (110) (X-ray detector) may include at least one structure among a vertical structure in which a compound semiconductor (111) is disposed between a plurality of electrodes (112) and a horizontal structure in which a plurality of electrodes (112) are disposed on one side of the compound semiconductor (111).

[0042] Specifically, as illustrated in FIG. 2(a), the vertical structure may refer to a structure in which electrodes (112) are arranged on the upper and lower sides with a compound semiconductor (111) in between.

[0043] Additionally, as shown in FIG. 2(b), the horizontal structure may refer to a structure in which a plurality of electrodes (112) are arranged side by side on the same surface of a compound semiconductor (111).

[0044] In other words, the photodetector (110) (X-ray detector) can be manufactured with at least one of a vertical structure and a horizontal structure.

[0045] Additionally, referring to FIG. 2, the electrode (112) can perform the role of measuring current and voltage through electrical contact with the compound semiconductor (111).

[0046] Additionally, the electrode (112) (Metal) may be a conductive metal such as, for example, Al (aluminum) and Ti (titanium). However, since the electrode (112) is a configuration obvious to a person skilled in the art, a more detailed description will be omitted.

[0047] FIG. 3 is a drawing for explaining that, in the first aspect of the present invention, a compound semiconductor is configured to form a device structure in which it is joined with a heterogeneous material.

[0048] Specifically, FIG. 3 is a schematic diagram of a compound semiconductor-based photodetector illustrating a device structure in which heterogeneous materials are joined.

[0049] Additionally, referring to FIG. 3, the compound semiconductor (111) can form a device structure in which it is joined with at least one heterogeneous material (111a) among a-Se, HgI2, PbI2, CdTe, CdZnTe, PbO, TlBr, and a-Si.

[0050] Here, the device structure may refer to the physical arrangement and connection form formed by joining different materials.

[0051] Additionally, the heterogeneous material (111a) may refer to a material having different physical and chemical properties from the compound semiconductor (111).

[0052] In addition, a-Se, HgI2, PbI2, CdTe, CdZnTe, PbO, TlBr, and a-Si are materials used in conventional X-ray detectors, and the compound semiconductor (111) can form a device structure (junction structure) in which it is joined with a heterogeneous material (111a) used in conventional X-ray detectors.

[0053] For example, referring to FIG. 3, if the compound semiconductor (1) is a compound semiconductor (111) comprising at least one of Ga2O3, GaN, AlGaN, and SiC, the compound semiconductor (2) is a-Se, HgI ₂ , PbI ₂ It may be a heterogeneous material (111a) among CdTe, CdZnTe, PbO, TlBr, and a-Si. Conversely, it may also be possible for the Compound semiconductor (1) to be a heterogeneous material (111a) and the Compound semiconductor (2) to be a compound semiconductor (111).

[0054] Additionally, the compound semiconductor (111) may be configured to form a device structure in which it is joined with at least one heterogeneous material (111a) among SiO2, GaN, SiC, and diamond.

[0055] In addition, SiO2, GaN, SiC, and diamond are materials used in conventional X-ray detectors, and the compound semiconductor (111) can form a device structure (junction structure) in which it is joined with a heterogeneous material (111a) used in conventional X-ray detectors.

[0056] For example, as described above, referring to FIG. 3, if the compound semiconductor (1) is a compound semiconductor (111) comprising at least one of Ga2O3, GaN, AlGaN, and SiC, the compound semiconductor (2) may be a heterogeneous material (111a) among SiO2, GaN, SiC, and diamond. Conversely, it may also be possible for the compound semiconductor (1) to be a heterogeneous material (111a) and the compound semiconductor (2) to be a compound semiconductor (111).

[0057] However, the heterogeneous material (111a) that is bonded to the compound semiconductor (111) to form a device structure is not limited to the aforementioned a-Se, HgI2, PbI2, CdTe, CdZnTe, PbO, TlBr, a-Si, SiO2, GaN, SiC, and diamond, and various materials used in conventional X-ray detectors may be included therein.

[0058] In addition, the compound semiconductor (111) may be doped with at least one atom of Si, Sn, Ge, Mg, Fe, In, and Al.

[0059] In other words, compound semiconductor (111) The performance of the photodetector (110) (detector) can be increased through a doping process in which atoms such as Si, Sn, Ge, Mg, Fe, In, and Al are doped into the base photodetector (110) (X-ray detector) (specifically, compound semiconductor (111)).

[0060] Additionally, referring to FIG. 1, the present method (S) may include a step (S2) of analyzing the current and voltage values ​​of a photodetector (110) to identify X-ray and UV.

[0061] That is, in step S2, X-ray and UV can be identified by analyzing the current and voltage values ​​of the photodetector (110).

[0062] FIG. 4 is a diagram illustrating the change in charge neutrality point through the change in current-voltage characteristics of a compound semiconductor-based photodetector due to X-ray and UV irradiation in the first aspect of the present invention.

[0063] Specifically, Figure 4 shows the current-voltage measurement results following X-ray and UV irradiation of a Ga2O3-based photodetector.

[0064] The dark shown in Fig. 4 refers to a dark state in which no light is irradiated, which can be understood as a reference state representing the basic electrical characteristics of the photodetector (110).

[0065] At this time, referring to Fig. 4, in step S2, X-ray and UV can be identified through the change in the charge neutral point (CNP), which is the voltage point where the minimum value of the current appears in the current-voltage curve.

[0066] Specifically, referring to Fig. 4, it can be seen that when X-rays are irradiated, a phenomenon occurs in which the charge neutral point (CNP) changes compared to when it is dark. Through this, X-rays and UV can be distinguished by the change in the charge neutral point (CNP) in step S2.

[0067] In this regard, conventional X-ray detectors have been fabricated using materials such as a-Se, HgI2, PbI2, CdTe, CdZnTe, PbO, TlBr, and a-Si, while UV detectors have been fabricated using materials such as GaN, AlGaN, and SiC. Existing X-ray and UV detectors determined the presence or absence of light based on changes in the photocurrent value. However, since both wavelengths cause changes in the photocurrent value, it was impossible to distinguish whether the incident wavelength was X-ray or UV. To detect light of the two wavelengths, it was necessary to use different materials for each, or there were difficulties in identifying and detecting the two wavelengths separately.

[0068] Meanwhile, the present method (S) utilizes a compound semiconductor-based photodetector (110) to identify and detect X-ray and UV signals using a single photodetector (110) with a single material.

[0069] FIG. 5 is a diagram illustrating the ionization of atoms within a compound semiconductor by X-ray irradiation in the first aspect of the present invention.

[0070] Specifically, Fig. 5 is a schematic diagram of the change in atomic structure due to X-ray irradiation, illustrating the atomic ionization process with Ga as an example.

[0071] Figure 6 is a diagram illustrating the process of inner shell electron emission due to the ionization of atoms of a compound semiconductor during X-ray irradiation in the first aspect of the present invention.

[0072] Specifically, referring to FIGS. 5 and 6, step S2 can distinguish between X-ray and UV based on the change in the charge neutral point due to the ionization of atoms of the compound semiconductor (111) when the light irradiated in step S1 is X-ray.

[0073] More specifically, referring to FIGS. 5 and 6, when X-rays are irradiated onto a compound semiconductor (111), the energy of the X-rays is higher than the electron binding energy of an atom (e.g., a Ga atom) of the compound semiconductor (111), so that electrons located in the inner shell of an atom (e.g., a Ga atom) of the compound semiconductor (111) are emitted, and the atom (e.g., a Ga atom) of the compound semiconductor (111) can be positively ionized.

[0074] That is, when X-rays are irradiated onto the compound semiconductor (111), the atoms of the compound semiconductor (111) (e.g., Ga atoms) become positively ionized, and a change may occur in the charge neutral point (CNP).

[0075] Through this, in step S2, X-ray and UV can be identified based on changes in the charge neutral point.

[0076] More specifically, in step S2, if the charge neutral point changes, it can be determined that the light irradiated in step S1 is X-ray, and if the charge neutral point does not change, it can be determined that the light irradiated in step S1 is UV.

[0077] Referring to FIGS. 5 and 6, when X-rays are irradiated onto a compound semiconductor (111) as described above, the energy of the X-rays is higher than the electron binding energy of an atom (e.g., a Ga atom) of the compound semiconductor (111), so that electrons located in the inner shell of an atom (e.g., a Ga atom) of the compound semiconductor (111) are emitted, and the atom (e.g., a Ga atom) of the compound semiconductor (111) can be positively ionized.

[0078] At this time, referring to Fig. 4, it can be seen that when X-rays are irradiated, the charge neutral point (CNP) changes compared to when it is dark, and when UV is irradiated, the charge neutral point does not change.

[0079] Here, it goes without saying that the charge neutral point does not change can be understood as a concept that includes not only maintaining an exactly identical value, but also maintaining it within a preset error range or tolerance range.

[0080] Through this, the present method (S) can identify and detect X-ray and UV signals using a single photodetector (110) by utilizing a compound semiconductor-based photodetector (110) and using a single material.

[0081] In addition, referring to Fig. 4, if the charge neutral point in step S2 moves in the negative direction, it can be determined that the light irradiated in step S1 is an X-ray.

[0082] Specifically, referring to Fig. 4, it can be seen that when X-rays are irradiated, the charge neutral point moves in the negative direction. That is, in step S2, if the charge neutral point moves in the negative direction, it can be determined that the light irradiated in step S1 was X-ray irradiation.

[0083] Here, moving in the negative direction may mean that the voltage at which the charge neutral point appears moves toward a lower voltage, as shown in Fig. 4.

[0084] In other words, in step S2, X-ray and UV signals can be identified by utilizing the characteristic that the charge neutral point (CNP) of the compound semiconductor (111) changes due to X-ray energy.

[0085] Additionally, referring to FIG. 1, the present method (S) may include a step (step S3) of quantitatively determining the X-ray energy intensity by analyzing the change pattern according to the amount of change of the charge neutral point, the X-ray energy intensity, and the irradiation time.

[0086] That is, in step S3, the change in charge neutrality point and the change pattern according to X-ray energy intensity and irradiation time are analyzed, so that the X-ray energy intensity can be quantitatively determined.

[0087] In addition, in step S3, real-time X-ray energy changes and X-ray energy intensity can be quantitatively determined based on changes in the charge neutral point (CNP).

[0088] In addition, in step S3, the X-ray energy intensity can be quantitatively determined in real time through simulation of the charge neutral point (CNP) change immediately after irradiation and over time.

[0089] Figure 7 is a diagram illustrating the difference in the amount of change of the charge neutral point according to the X-ray energy intensity in the first aspect of the present invention.

[0090] Specifically, FIG. 7 is a diagram showing the current-voltage measurement results of a photodetector (110) based on a compound semiconductor (111) (Ga2O3) according to X-ray energy.

[0091] FIGS. 8 and 9 are drawings illustrating the pattern of change of the charge neutral point as the X-ray irradiation time increases in the first aspect of the present invention.

[0092] Additionally, referring to FIGS. 7 to 9, the change pattern may include a pattern in which the change in the charge neutral point increases as the X-ray energy intensity decreases, and a pattern in which the amount of change in the charge neutral point increases and then decreases as the X-ray irradiation time increases.

[0093] Specifically, referring to FIG. 7, the lower the energy intensity, the greater the reactivity with the compound semiconductor (111) (the lower the energy intensity, the greater the attenuation), so the change in the charge neutral point (CNP) may increase as the X-ray energy intensity decreases during X-ray irradiation.

[0094] In other words, referring to FIG. 7, it can be seen that as the energy intensity decreases, the reactivity with the compound semiconductor (111) (Ga2O3) increases, and the change in the charge neutral point also increases. That is, the change pattern may include a pattern in which the change in the charge neutral point increases as the X-ray energy intensity decreases.

[0095] Here, an increase in the change of the charge neutral point may mean that the magnitude of the shift of the charge neutral point in the negative direction becomes larger.

[0096] Additionally, referring to FIGS. 8 and 9, as the X-ray irradiation time increases, the change in the charge neutral point (CNP) may increase and then decrease. Specifically, as compound semiconductor atoms are ionized by X-ray irradiation, the change in the charge neutral point (CNP) may appear large initially, but as time passes, the state is stabilized by the electrons of the electrode (112), and the change in the charge neutral point (CNP) may decrease.

[0097] In other words, referring to FIG. 9, the charge neutral point (CNP) changes significantly at the beginning of X-ray irradiation, but as time passes, the state is stabilized by the electrons of the electrode (112), and the magnitude of the change can be reduced.

[0098] That is, the change pattern may include a pattern in which the amount of change in the charge neutral point increases and then decreases as the X-ray irradiation time increases.

[0099] In other words, the change pattern of the charge neutral point (CNP) can be affected by X-ray energy intensity and irradiation time.

[0100] Through this, in the S3 stage, the X-ray energy intensity can be quantitatively determined in real time by simulating the charge neutral point change immediately after irradiation and over time.

[0101] In other words, conventionally, X-ray and UV detectors determined the presence or absence of light based on changes in photocurrent values; since both wavelengths change their photocurrent values, it was impossible to distinguish whether the incident wavelength was X-ray or UV, and there were difficulties in using different materials or in identifying and detecting the two wavelengths of light separately.

[0102] Meanwhile, the present method (S) can clearly distinguish and identify X-ray and UV signals using a single compound semiconductor (111)-based photodetector (110) through a signal distinction method utilizing a change in the charge neutral point as described above, and can be applied to various industrial and security fields such as space and aviation environment monitoring sensors, real-time power measurement of X-ray-based equipment, non-destructive quality inspection, fire detection and X-ray emission verification in X-ray-based facilities where access is restricted.

[0103] Meanwhile, the X-ray and UV signal identification device according to the second aspect of the present invention (hereinafter referred to as "the device (100)") will be described below. However, the device (100) shares the same or corresponding technical features as the method (S), and the same reference numerals will be used for configurations that are identical or similar to the configuration described above, and redundant descriptions will be simplified or omitted.

[0104] FIG. 10 is a drawing for explaining the configuration of an X-ray and UV signal identification device according to the second aspect of the present invention.

[0105] Referring to FIG. 10, the device (100) may include a photodetector (110).

[0106] Specifically, referring to FIG. 2, the photodetector (110) may include a compound semiconductor (111).

[0107] At this time, the compound semiconductor (111) may include at least one of Ga2O3, GaN, AlGaN and SiC.

[0108] Additionally, referring to FIG. 3, the compound semiconductor (111) can form a device structure in which it is joined with at least one heterogeneous material (111a) among a-Se, HgI2, PbI2, CdTe, CdZnTe, PbO, TlBr, and a-Si.

[0109] Additionally, the compound semiconductor (111) may be configured to form a device structure in which it is joined with at least one heterogeneous material (111a) among SiO2, GaN, SiC, and diamond.

[0110] In addition, the compound semiconductor (111) may be doped with at least one atom of Si, Sn, Ge, Mg, Fe, In, and Al.

[0111] Additionally, referring to FIG. 2, the photodetector (110) may include a plurality of electrodes (112).

[0112] At this time, the electrode (112) (Metal) may be a conductive metal such as Al (aluminum) and Ti (titanium), for example. However, since the electrode (112) is a configuration obvious to a person skilled in the art, a more detailed description will be omitted.

[0113] Additionally, referring to FIGS. 2 and 3, the photodetector (110) (X-ray detector) may include at least one structure among a vertical structure in which a compound semiconductor (111) is disposed between a plurality of electrodes (112) and a horizontal structure in which a plurality of electrodes (112) are disposed on one side of the compound semiconductor (111).

[0114] Also, compound semiconductor (111) The photodetector (110) based on the space and aviation environment monitoring sensor, fire detection and X-ray emission verification in X-ray facilities with restricted access, etc., can be used for industrial applications.

[0115] In addition, the photodetector (110) (X-ray detector) based on the compound semiconductor (111) can be utilized in both direct and indirect ways.

[0116] Here, the direct method may refer to a method in which a compound semiconductor (111) that receives an X-ray generates photoelectrons and converts them directly into an electrical signal. In this case, the photodetector (110) (X-ray detector) based on the compound semiconductor (111) used in the direct method may require an X-ray and a photodetector (110). However, since the direct method is obvious to a person skilled in the art, a more detailed explanation will be omitted.

[0117] Additionally, the indirect method may refer to a method in which X-rays are irradiated onto a scintillator and converted into visible light, and then the visible light reacts with the compound semiconductor (111) of a photodetector to be converted into an electrical signal. In this case, the photodetector (110) (X-ray detector) based on the compound semiconductor (111) utilized in the indirect method may require X-rays, a scintillator, and a photodetector (110). That is, the photodetector (110) (X-ray detector) based on the compound semiconductor (111) utilized in the indirect method may include a scintillator. However, since the indirect method is obvious to a person skilled in the art, a more detailed explanation will be omitted.

[0118] Additionally, referring to FIG. 10, the device (100) may include a measuring unit (120) that irradiates light onto a photodetector (110) and measures the current and voltage of the photodetector (110) through a plurality of electrodes (112) provided in the photodetector (110).

[0119] That is, the measuring unit (120) can irradiate light onto the photodetector (110) and measure the current and voltage of the photodetector (110) through a plurality of electrodes (112) provided in the photodetector (110).

[0120] Additionally, referring to FIG. 10, the device (100) may include an identification unit (130) that identifies X-ray and UV by analyzing the current and voltage values ​​of a photodetector (110).

[0121] Specifically, referring to FIG. 4, the identification unit (130) can identify X-ray and UV through a change in the charge neutral point (CNP), which is a voltage point where the minimum value of the current appears in the current-voltage curve.

[0122] More specifically, referring to FIGS. 5 and 6, the identification unit (130) can distinguish between X-ray and UV based on the change in the charge neutral point due to the ionization of atoms of the compound semiconductor (111) when the light irradiated from the measurement unit (120) is X-ray.

[0123] More specifically, the identification unit (130) can determine that the light irradiated from the measurement unit (120) is X-ray if the charge neutral point changes, and determine that the light irradiated from the measurement unit (120) is UV if the charge neutral point does not change.

[0124] For example, referring to FIG. 4, the identification unit (130) can determine that the light irradiated in step S1 is an X-ray when the charge neutral point moves in the negative direction.

[0125] Additionally, referring to FIG. 10, the device (100) may include a judgment unit (140) that quantitatively determines the X-ray energy intensity by analyzing the change pattern according to the amount of change in the charge neutral point, the X-ray energy intensity, and the irradiation time.

[0126] That is, the judgment unit (140) can quantitatively determine the X-ray energy intensity by analyzing the change in the charge neutral point and the change pattern according to the X-ray energy intensity and irradiation time.

[0127] Here, referring to FIGS. 7 to 9, the change pattern may include a pattern in which the change in the charge neutral point increases as the X-ray energy intensity decreases, and a pattern in which the amount of change in the charge neutral point increases and then decreases as the X-ray irradiation time increases.

[0128] In addition, the device (100) can be applied to various industrial and security fields, such as space and aviation environment monitoring sensors, real-time power measurement of X-ray-based equipment, non-destructive quality inspection, fire detection and X-ray emission verification in X-ray-based facilities with restricted access, through the ability to identify and detect X-ray and UV signals using a photodetector (110) based on a compound semiconductor (111).

[0129] The foregoing description of the present invention is for illustrative purposes only, and those skilled in the art will understand that other specific forms can be easily modified without altering the technical concept or essential features of the present invention. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. For example, each component described as a single unit may be implemented in a distributed manner, and components described as distributed may likewise be implemented in a combined form.

[0130] The scope of the present invention is defined by the claims set forth below rather than by the detailed description above, and all modifications or variations derived from the meaning and scope of the claims and the concept of equivalents thereof should be interpreted as being included within the scope of the present invention. Explanation of the symbols

[0131] 100: X-ray and UV signal identification device 110: Photodetector 111: Compound semiconductor 111a: Heterogeneous substance 112: Electrode 120: Measurement section 130: Identification unit 140: Judgment Department

Claims

Claim 1 A method for identifying X-ray and UV signals using a compound semiconductor-based photodetector, comprising: (a) a step of irradiating light onto the photodetector and measuring the current and voltage of the photodetector through a plurality of electrodes provided in the photodetector; and (b) a step of analyzing the current and voltage values ​​of the photodetector to identify the X-ray and the UV, wherein in step (b), the X-ray and the UV are identified through a change in the charge neutral point (CNP), which is a voltage point where the minimum value of the current appears in the current-voltage curve. Claim 2 A method for identifying X-ray and UV signals according to claim 1, wherein the compound semiconductor comprises at least one of Ga2O3, GaN, AlGaN, and SiC. Claim 3 A method for identifying X-ray and UV signals according to claim 1, wherein step (b) is to identify the X-ray and the UV based on the change in the charge neutral point due to the ionization of atoms of the compound semiconductor when the light irradiated in step (a) is an X-ray. Claim 4 A method for identifying X-ray and UV signals, wherein in paragraph 3, step (b) determines that the light irradiated in step (a) is X-ray if the charge neutral point changes, and determines that the light irradiated in step (a) is UV if the charge neutral point does not change. Claim 5 A method for identifying X-ray and UV signals, wherein in paragraph 3, step (b) determines that the light irradiated in step (a) is X-ray when the charge neutral point moves in a negative direction. Claim 6 A method for identifying X-ray and UV signals according to claim 1, wherein the method for identifying X-ray and UV signals further comprises the step of (c) analyzing the change pattern according to the change amount of the charge neutral point, the X-ray energy intensity, and the irradiation time, and quantitatively determining the X-ray energy intensity. Claim 7 A method for identifying X-ray and UV signals, wherein, in claim 6, the change pattern includes a pattern in which the change of the charge neutral point increases as the X-ray energy intensity decreases, and a pattern in which the amount of change of the charge neutral point increases and then decreases as the X-ray irradiation time increases. Claim 8 A method for identifying X-ray and UV signals, wherein, in claim 1, the photodetector comprises at least one structure among a vertical structure in which the compound semiconductor is disposed between the plurality of electrodes and a horizontal structure in which the plurality of electrodes are disposed on one side of the compound semiconductor. Claim 9 A method for identifying X-ray and UV signals, wherein, in claim 1, the compound semiconductor forms a device structure in which it is joined with at least one heterogeneous material selected from a-Se, HgI2, PbI2, CdTe, CdZnTe, PbO, TlBr, and a-Si. Claim 10 A method for identifying X-ray and UV signals, wherein, in claim 1, the compound semiconductor is configured to form a device structure in which it is joined with at least one heterogeneous material among SiO2, GaN, SiC, and diamond. Claim 11 A method for identifying X-ray and UV signals according to claim 1, wherein the compound semiconductor is doped with at least one atom selected from Si, Sn, Ge, Mg, Fe, In, and Al. Claim 12 X-ray and UV signal identification device using a compound semiconductor-based photodetector, comprising: the photodetector; a measuring unit that irradiates light onto the photodetector and measures the current and voltage of the photodetector through a plurality of electrodes provided in the photodetector; and an identification unit that analyzes the current and voltage values ​​of the photodetector to identify the X-ray and the UV, wherein the identification unit identifies the X-ray and the UV through a change in the charge neutral point (CNP), which is a voltage point where the minimum value of the current appears in the current-voltage curve. Claim 13 In claim 12, the X-ray and UV signal identification device further comprises a judgment unit that quantitatively determines the X-ray energy intensity by analyzing the change amount of the charge neutral point and the change pattern according to the X-ray energy intensity and irradiation time.

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