Chemical vapor deposition apparatus

Abstract

A chemical vapor deposition apparatus may include a chamber, a susceptor disposed inside the chamber and supporting a substrate, an upper plate including at least one injection port, and a lower plate facing the upper plate, and a shower head for supplying gas into the chamber, wherein the lower plate may include a plurality of first nozzles surrounding the central portion of the lower plate, corner nozzles spaced 750 mm to 1,100 mm apart from the central portion of the lower plate toward the corner portion of the lower plate, a plurality of second nozzles surrounding the first nozzles, and a plurality of third nozzles disposed at the corner portion of the lower plate and partially surrounding a portion of the corner nozzles.

Description

Technology Field

[0001] The present invention relates to a chemical vapor deposition apparatus. More specifically, the present invention relates to a chemical vapor deposition apparatus comprising a shower head. Background Technology

[0002] Display devices can be classified into liquid crystal displays (LCDs), organic light emitting displays (OLEDs), plasma display panels (PDPs), electrophoretic displays, etc., depending on the method of light emission.

[0003] The above-described display device may include a gate electrode, a data electrode, a pixel electrode, etc. disposed on a substrate. Here, the gate electrode, the data electrode, and the pixel electrode may be stacked on different layers. To this end, an insulating film may be stacked between the gate electrode and the data electrode. Additionally, an insulating film may also be stacked between the data electrode and the pixel electrode. The insulating film may be applied to the entire surface of the substrate using a plasma deposition apparatus. To form the insulating film, a film-forming material such as silicon oxide or silicon nitride may be used.

[0004] At this time, in order to uniformly deposit a thin insulating film on a substrate, it is important to form a uniform plasma density. To this end, a plasma enhanced chemical vapor deposition (PECVD) apparatus using a shower head type flat electrode is generally used. The problem to be solved

[0005] The object of the present invention is to provide a chemical vapor deposition apparatus including a shower head.

[0006] However, the purpose of the present invention is not limited to the aforementioned purpose and may be extended in various ways without departing from the spirit and scope of the present invention. means of solving the problem

[0007] To achieve the aforementioned objective of the present invention, a chemical vapor deposition apparatus according to one embodiment of the present invention comprises a chamber, a susceptor disposed inside the chamber and supporting a substrate, an upper plate including at least one injection port, and a lower plate facing the upper plate, and a shower head for supplying gas into the chamber, wherein the lower plate may include a plurality of first nozzles surrounding the central portion of the lower plate, corner nozzles spaced 750 mm to 1,100 mm apart from the central portion of the lower plate in the direction of the corner portion of the lower plate, a plurality of second nozzles surrounding the first nozzles, and a plurality of third nozzles disposed in the corner portion of the lower plate and partially surrounding a portion of the corner nozzles.

[0008] In one embodiment, the corner nozzles may be defined as the second nozzles among the second nozzles that are spaced furthest from the center of the lower plate.

[0009] In one embodiment, each of the first nozzles has a first length in the thickness direction of the lower plate, and each of the second nozzles has a second length in the thickness direction of the lower plate, and the second length may be greater than the first length.

[0010] In one embodiment, each of the third nozzles has a third length in the thickness direction of the lower plate, and the third length may be greater than the second length.

[0011] In one embodiment, each of the second and third lengths may be gradually increased in the direction from the central part of the lower plate to the outermost part of the lower plate.

[0012] In one embodiment, the difference between the first length and the third length of the third nozzle that is furthest apart from the center of the lower plate among the third nozzles may be 0.5 mm to 4.5 mm.

[0013] In one embodiment, the first and second nozzles may be arranged at equal intervals along a virtual straight line connecting the center of the lower plate and the corner of the lower plate.

[0014] In one embodiment, the third nozzles may be arranged at equal intervals along a virtual straight line connecting the center of the lower plate and the corner of the lower plate.

[0015] In one embodiment, the first and second nozzles may be arranged at equal intervals along an imaginary straight line connecting the center of the lower plate and the short or long side of the lower plate.

[0016] In one embodiment, the first nozzles may be arranged in a circular shape or a polygonal shape.

[0017] In one embodiment, the second nozzles may be arranged in a polygonal shape.

[0018] In one embodiment, the third nozzles may be arranged in a round shape at the corner portion of the lower plate.

[0019] In one embodiment, the thickness of the central portion of the lower plate may be thinner than the thickness of the corner portion of the lower plate.

[0020] In one embodiment, the upper surface of the lower plate has a flat upper surface, and the lower surface of the lower plate may have curvature.

[0021] In one embodiment, each of the first to third nozzles may have a conical opening in which the width of the opening gradually decreases from the lower surface of the lower plate to the upper surface. Effects of the invention

[0022] In a chemical vapor deposition apparatus according to one embodiment of the present invention, the lower plate may include first and second nozzles surrounding the central portion of the lower plate and third nozzles disposed at the corner portion of the lower plate and partially surrounding a portion of the second nozzles. Accordingly, the chemical vapor deposition apparatus can uniformly diffuse a reaction gas through the nozzles of the lower plate, thereby improving the uniformity of the insulating film formed on the substrate.

[0023] However, the effects of the present invention are not limited to the effects described above, and may be extended in various ways without departing from the spirit and scope of the present invention. Brief explanation of the drawing

[0024] FIG. 1 is a cross-sectional view showing a chemical vapor deposition apparatus according to one embodiment of the present invention. Figure 2 is a plan view showing the lower plate of the shower head illustrated in Figure 1. Figure 3 is a cross-sectional view taken along the line I-I' of Figure 2. FIG. 4 is a cross-sectional view showing the nozzle of a lower plate according to one embodiment of the present invention. Figure 5 is a cross-sectional view taken along the line II-II' of Figure 2. FIGS. 6a to 6d are cross-sectional views showing the nozzle of a lower plate according to another embodiment of the present invention. Figure 7 is a diagram showing the uniformity of an insulating film formed using a conventional chemical vapor deposition apparatus. FIG. 8 is a diagram showing the uniformity of an insulating film formed using a chemical vapor deposition apparatus according to one embodiment of the present invention. Specific details for implementing the invention

[0025] Hereinafter, a chemical vapor deposition apparatus according to exemplary embodiments of the present invention will be described in detail with reference to the attached drawings. In the attached drawings, the same or similar reference numerals are used for identical or similar components.

[0026] FIG. 1 is a cross-sectional view showing a chemical vapor deposition apparatus according to one embodiment of the present invention. Hereinafter, the chemical vapor deposition apparatus (10) is described on the premise that it is a plasma enhanced chemical vapor deposition (PECVD) apparatus.

[0027] Referring to FIG. 1, the chemical vapor deposition apparatus (10) may include a chamber (100), a process gas supply unit (200), a susceptor (250), a shower head (300), a cleaning gas supply unit (400), and a power supply unit (700).

[0028] The chamber (100) may include an upper chamber (110) and a lower chamber (130). The upper chamber (110) and the lower chamber (130) may be arranged vertically. That is, the upper chamber (110) and the lower chamber (130) may be arranged vertically to form an internal space. For example, the interior of the chamber (100) may be a vacuum.

[0029] In the internal space of the chamber (100), a film-forming material can be deposited on the substrate (250a). That is, the film-forming material can be deposited on the substrate (250a) inside the chamber (100) to form an insulating film. The chamber (100) may have an opening (150) on one side thereof. Accordingly, the film-forming material, cleaning gas, and reaction material resulting from these present in the internal space of the chamber (100) can be discharged through the opening (150).

[0030] An insulating part (111) may be disposed between the chamber (100) and the shower head (300). The insulating part (111) may be fixed to the chamber (100) to support the shower head (300). Additionally, the insulating part (111) may insulate the shower head (300) from the chamber (100).

[0031] A process gas supply unit (200) may be positioned outside the chamber (100). The process gas supply unit (200) may include a storage container and an outlet pipe. The process gas supply unit (200) may supply process gas to the chamber (100) through the storage container and the outlet pipe. The storage container has a tank shape and may store the process gas. The outlet pipe may be connected to a shower head (300) through an inlet (315) of an upper plate (310).

[0032] The process gas supply unit (200) may include a plasma generator that activates the process gas supplied to the chamber (100) and a field removal unit that prevents the generation of an electric or magnetic field caused by the activated process gas.

[0033] A susceptor (250) can be placed inside a chamber (100). The susceptor (250) can support a substrate (250a) during the process. In order to form a thin-film transistor on the substrate (250a) placed on the susceptor (250), a film-forming material must be deposited. For example, the film-forming material may include silicon oxide (SiOx), silicon nitride (SiNx), etc.

[0034] The susceptor (250) may include at least one embedded heater. The embedded heater may be connected to a separate power source to heat the susceptor (250) and a substrate (250a) placed on the susceptor (250) to a certain temperature. For example, the heater may heat the substrate (250a) to a temperature of about 150°C to about 450°C and maintain it.

[0035] The susceptor (250) can be connected to the stem (260) through the lower side. The stem (260) connects the susceptor (250) to a lifting system, and the lifting system can raise or lower the susceptor (250) to facilitate the transfer of the substrate (250a).

[0036] The shower head (300) may be positioned inside the chamber (100). The shower head (300) may be positioned to face the susceptor (250). The shower head (300) may have various shapes. For example, the shower head (300) may have a disc shape or a polygonal plate shape. In one embodiment, the shower head (300) may include an upper plate (310), a lower plate (330), and a side wall (320).

[0037] The upper plate (310) may include at least one inlet (311). The inlet (311) may serve as a passage for supplying process gas supplied from the process gas supply unit (200) into the interior of the chamber (100). Additionally, the inlet (311) may also be connected to the cleaning gas supply unit (400). However, although FIG. 1 illustrates the upper plate (310) as including one inlet (311), the configuration of the present invention is not limited thereto. For example, the upper plate (310) may include a plurality of inlets (311).

[0038] The cleaning gas supply unit (400) can supply cleaning gas to clean the interior of the chamber (100). In the process of depositing a film-forming material on the substrate (250a), the film-forming material may be applied to the shower head (300) and the interior of the chamber (100) in addition to the substrate (250a). At this time, the film-forming material applied to the interior of the chamber (100) can be removed using the cleaning gas. For example, the cleaning gas may include nitrogen trifluoride (NF3), etc.

[0039] The lower plate (330) may include a plurality of nozzles (311). The nozzles (311) may be arranged in a specific pattern on the lower plate (100) so that the process gas and the cleaning gas flowing into the chamber (100) through the lower plate (330) are uniformly distributed. The shape of the lower plate (100) may substantially correspond to the perimeter of the substrate (250a). For example, the lower plate (100) may have a circular shape or a square shape.

[0040] The side wall (320) of the shower head (300) may be formed integrally with the upper plate (310) and the lower plate (330). Optionally, the upper plate (310), the lower plate (330), and the side wall (320) may each be formed individually.

[0041] For example, the upper plate (310), lower plate (330), and side wall (320) may each include stainless steel, aluminum (Al), nickel (Ni), etc. Additionally, the upper plate (310), lower plate (330), and side wall (320) may each have a thickness of about 0.8 in to about 2.0 in.

[0042] Accordingly, the shower head (300) may have a filling space into which the process gas or the cleaning gas is filled. The process gas or the cleaning gas introduced into the filling space of the shower head (300) through the inlet (315) of the upper plate (310) may diffuse into the interior of the chamber (100) through the nozzles (331) of the lower plate (330).

[0043] The power supply unit (700) can apply power to the shower head (300) to form plasma inside the chamber (100). Specifically, the power supply unit (700) can form plasma by supplying radio frequency (RF) power to the shower head (300) to excite the process gas between the shower head (300) and the grounded susceptor (250). At this time, the power supply unit (700) can adjust the size of the RF power according to the size of the substrate (250a).

[0044] Figure 2 is a plan view showing the lower plate of the shower head illustrated in Figure 1.

[0045] Referring to FIG. 2, the lower plate (330) may include a plurality of nozzles (311). Here, the nozzles (331) may include a plurality of first nozzles (331a), a plurality of second nozzles (331b), and a plurality of third nozzles (331c).

[0046] The first nozzles (331a) may surround the central portion of the lower plate (330). The first nozzles (331a) may be arranged in a circular shape. For example, the first nozzles (331a) may be arranged on a circumference having a diameter (D) of about 110 mm or less. In one embodiment, the diameter (D) may be about 110 mm. Optionally, the first nozzles (331a) may be arranged in a polygonal shape.

[0047] The second nozzles (331b) may be arranged along at least one closed curve located adjacent to each other. In one embodiment, the second nozzles (331b) may be arranged along eight closed curves located adjacent to each other.

[0048] The second nozzles (331b) may surround the first nozzles (331a). The second nozzles (331b) may be arranged in a polygonal shape, spaced apart from the central portion of the lower plate (330). For example, the second nozzles (331b) may include corner nozzles spaced apart from the central portion of the lower plate (330) by a distance (CL) of about 750 mm to about 1,100 mm toward the corner portion of the lower plate (330). In one embodiment, the corner nozzles may be spaced apart from the central portion of the lower plate (330) by a distance (CL) of about 1,000 mm. Here, the corner nozzles may be defined as the second nozzles (331b) that are spaced furthest from the central portion of the lower plate (330). In other words, the corner nozzles can be defined as second nozzles (331b) placed on the outermost closed curve among the closed curves.

[0049] The third nozzles (331c) may be arranged along at least one open curve located adjacent to each other. In one embodiment, the third nozzles (331c) may be arranged along four open curves at each corner of the lower plate (330).

[0050] In one embodiment, the third nozzles (331c) are positioned at the corner portion of the lower plate (330) and may partially surround a portion of the corner nozzles. That is, the third nozzles (331c) may not be positioned on the long and short sides of the lower plate (330). The third nozzles (331c) may be positioned in a rounded shape at the corner portion of the lower plate (330).

[0051] The first and second nozzles (331a, 331b) may be arranged at equal intervals along an imaginary straight line connecting the center of the lower plate (330) and the long or short side of the lower plate (330).

[0052] For example, the spacing (L1) between the 4th second nozzle (331b) positioned to the left from the central portion of the lower plate (330) and the 5th second nozzle (331b) positioned may be equal to the spacing (L2) between the 5th second nozzle (331b) positioned and the 6th second nozzle (331b) positioned. In one embodiment, the spacing (L1, L2) between the second nozzles (331b) positioned to the left from the central portion of the lower plate (330) may be approximately 90 mm.

[0053] For example, the spacing (L3) between the 4th second nozzle (331b) positioned upward from the center of the lower plate (330) and the 5th second nozzle (331b) positioned may be equal to the spacing (L4) between the 5th second nozzle (331b) positioned and the 6th second nozzle (331b) positioned. In one embodiment, the spacing (L3, L4) between the second nozzles (331b) positioned upward from the center of the lower plate (330) may be approximately 110 mm.

[0054] Additionally, the first and second nozzles (331a, 331b) may be arranged at equal intervals along a virtual straight line connecting the center of the lower plate (330) and the corner of the lower plate (330).

[0055] For example, the spacing (L5) between the 4th second nozzle (331b) and the 5th second nozzle (331b) arranged in the direction of the corner portion of the lower plate (330) from the central portion of the lower plate (330) may be equal to the spacing (L6) between the 5th second nozzle (331b) and the 6th second nozzle (331b).

[0056] Additionally, the third nozzles (331c) may be arranged at equal intervals along a virtual straight line connecting the center of the lower plate (330) and the corner of the lower plate (330).

[0057] FIG. 3 is a cross-sectional view taken along the line I-I' of FIG. 2. FIG. 4 is a cross-sectional view showing the nozzle of a lower plate according to one embodiment of the present invention.

[0058] Referring to FIGS. 1, 3 and 4, the lower plate (330) may include an upper surface (341) facing the upper plate (310) and a lower surface (342) facing the susceptor (250). For example, the upper surface (342) of the lower plate (330) may have a concave surface with respect to the surface of the susceptor (250). In one embodiment, the thickness of the central portion of the lower plate (330) may be thinner than the thickness of the edge portion of the lower plate (330).

[0059] The lower plate (330) may be machined to have a concave surface on its lower surface (342). The machining process may remove a portion of the lower plate (330) from the lower surface (342) of the lower plate (330) so that the central portion of the lower plate (330) has a thinner thickness than the edge portion of the lower plate (330).

[0060] The nozzles (331) formed on the lower plate (330) can be formed in various ways to have various depths, diameters, shapes, etc. The nozzles (331) can be formed on the lower plate (330) by a computer numerical control machine process. Optionally, the nozzles (331) may be formed by drilling the lower plate (330) according to the arrangement of the nozzles (331).

[0061] Each of the nozzles (331) may include a first bore (332), a second bore (333), and an orifice (334) disposed between the first bore (332) and the second bore (333). The first bore (332), the second bore (333), and the orifice (334) may form a fluid path. At this time, the process gas supplied from the process gas supply unit (200) and the cleaning gas supplied from the cleaning gas supply unit (400) may pass through the fluid path and diffuse into the interior of the chamber (100).

[0062] The first bore (332) may include an upper opening (341a) formed on the upper surface (341) of the lower plate (330), and the second bore (333) may include a lower opening (342a) formed on the lower surface (342) of the lower plate (330). At this time, the length (Da) of the first bore (332) and the orifice (334) may be formed to be longer than the length (Db) of the second bore (333).

[0063] The length of each nozzle (331) can be gradually increased from the central part of the lower plate (330) toward the outermost part of the lower plate (330). Specifically, the length (Db) of the second bore (333) of each nozzle (331) can be gradually increased from the central part of the lower plate (330) toward the outermost part of the lower plate (330). Additionally, as shown in FIG. 3, the length (Da1) of the first bore (332) and orifice (334) of each nozzle (331) located in the central part of the lower plate (330) can be the same as the length (Da2) of the first bore (332) and orifice (334) of each nozzle (331) located spaced apart from the central part of the lower plate (330). However, the length (Db1) of the second bore (333) of each of the nozzles (331) located in the central part of the lower plate (330) may be shorter than the length (Db2) of the second bore (333) of each of the nozzles (331) located spaced apart from the central part of the lower plate (330). That is, the length of each nozzle (331) corresponding to the length (Da+Db) of the first bore (332), the second bore (333), and the orifice (334) may gradually increase in the direction from the central part of the lower plate (330) to the outermost part of the lower plate (330).

[0064] That is, the length (Db) of the second bore (333) of each of the nozzles (331) gradually increases from the central part of the lower plate (330) toward the outermost part of the lower plate (330), and accordingly, the diameter (d) of the lower opening (334) can gradually increase from the central part of the lower plate (330) toward the outermost part of the lower plate (330).

[0065] In one embodiment, each of the first nozzles (331a) has a first length in the thickness direction of the lower plate (330), each of the second nozzles (331b) has a second length in the thickness direction of the lower plate (330), and each of the third nozzles (331c) has a third length in the thickness direction of the lower plate (330), wherein the second length may be greater than the first length and the third length may be greater than the second length. Additionally, the second length and the third length may each gradually increase in the direction from the central part of the lower plate (330) to the outermost part of the lower plate (330). Here, each of the first to third lengths may be defined as the length (Da+Db) of the first bore (332), the second bore (333), and the orifice (334). In one embodiment, the second length and the third length, respectively, can be gradually increased by about 0.2 mm in the direction from the central part of the lower plate (330) to the outermost part of the lower plate (330).

[0066] The difference between the first length and the third length of the third nozzle (331c) that is furthest from the center of the lower plate (330) among the third nozzles (331c) may be about 0.5 mm to about 4.5 mm. In one embodiment, as described above, when the second length and the third length each increase gradually by about 0.2 mm in the direction from the center of the lower plate (330) to the outermost edge of the lower plate (330), the difference between the first length and the third length of the third nozzle (331c) that is furthest from the center of the lower plate (330) among the third nozzles (331c) may be about 2.4 mm.

[0067] Each of the nozzles (331) may have a conical shape at the bottom of the lower plate (330). That is, each of the nozzles (331) may have a conical opening in which the width of the opening gradually decreases in the direction from the lower surface (342) of the lower plate (330) to the upper surface (341). In other words, the second bore (333) of each nozzle (331) may have a conical shape. At this time, the conical angle (α) of the second bore (333) of the nozzle (331) located at the center of the lower plate (330) may be the same as the conical angle (α) of the second bore (333) of the nozzle (331) located spaced apart from the center of the lower plate (330).

[0068] In conventional chemical vapor deposition devices, the thickness of the insulating film formed on the substrate was not uniform due to the nozzles positioned at the corners of the lower plate.

[0069] In a chemical vapor deposition apparatus (10) according to one embodiment of the present invention, the lower plate (330) may include first and second nozzles (331a, 331b) surrounding the central portion of the lower plate (330) and third nozzles (331c) disposed at the corner portion of the lower plate (330) and partially surrounding a portion of the second nozzles (331b). Accordingly, the chemical vapor deposition apparatus (10) can uniformly diffuse a reaction gas through the nozzles (331) of the lower plate (330) to improve the uniformity of the insulating film formed on the substrate (250a).

[0070] Although the lower plate (330) of FIG. 2 is described as having a substrate (250a) of approximately 1,500 mm x approximately 1,850 mm in size, the configuration of the present invention is not limited thereto.

[0071] FIG. 5 is a cross-sectional view taken along the line II-II' of FIG. 2. For example, FIG. 5 may show each of the second nozzles (331b).

[0072] Referring to FIGS. 4 and 5, as described above, each of the nozzles (331) may include a first bore (332), a second bore (333), and an orifice (334) disposed between the first bore (332) and the second bore (333).

[0073] As described above, the second nozzles (331b) can be arranged along at least one closed curve located adjacent to each other, and the third nozzles (331c) can be arranged along at least one open curve located adjacent to each other.

[0074] The length and diameter of the second nozzles (331b) arranged along a single closed curve may be the same. That is, the lengths (Da3, Da4) of the first bore (332) and orifice (334) of each of the second nozzles (331b) arranged along a single closed curve may be the same regardless of position, and the lengths (Db3, Db4) of the second bore (333) of each of the second nozzles (331b) arranged along a single closed curve may also be the same regardless of position.

[0075] Additionally, although not shown in FIG. 5, the length and diameter of the first nozzles (331a) may be the same. Also, the length and diameter of the third nozzles (331c) arranged along a single open curve may be the same.

[0076] FIGS. 6a to 6d are cross-sectional views showing the nozzle of a lower plate according to another embodiment of the present invention.

[0077] Referring to FIGS. 6a through 6d, the lower plate (330) may include a nozzle (351, 361, 371, 381) having a second bore (353, 363, 373, 383) formed in various shapes. For example, in the cross-sectional view, the second bore (353, 363, 373, 383) may be formed in a shape such as a square shape (353), a stepped shape (363), a cone shape (373), or an outwardly spreading shape (383). Additionally, FIGS. 6a through 6d depict the length and diameter of the first bore (352, 362, 372, 382) as being the same, but are not limited thereto. For example, the length and diameter of the first bore (352, 362, 372, 382) may be different.

[0078] FIG. 7 is a diagram showing the uniformity of an insulating film deposited using a conventional chemical vapor deposition apparatus. FIG. 8 is a diagram showing the uniformity of an insulating film deposited using a chemical vapor deposition apparatus according to an embodiment of the present invention. For example, the z-axis represents the thickness (Å) of the insulating film, and the x-axis and y-axis represent the length (mm) of the substrate.

[0079] Referring to FIG. 7, when the insulating film is formed on the substrate using a conventional chemical vapor deposition apparatus, the uniformity of the insulating film thickness was approximately 8.83%. Specifically, the thickness of the insulating film at the corner portion of the substrate was approximately 2,200 Å to approximately 2,400 Å, and the thickness of the insulating film at the center of the substrate was approximately 1,800 Å to approximately 2,000 Å.

[0080] Referring to FIG. 8, when the insulating film is formed on the substrate using a chemical vapor phase apparatus (10) according to one embodiment of the present invention, the uniformity of the insulating film thickness was approximately 3.84%. Specifically, the overall thickness of the insulating film on the substrate was approximately 1,800 Å to approximately 2,200 Å. That is, when the insulating film is formed on the substrate using the chemical vapor phase apparatus (10) of the present invention, the uniformity of the insulating film thickness is relatively improved.

[0081] Although the foregoing description refers to exemplary embodiments of the present invention, those skilled in the art will understand that various modifications and changes can be made to the present invention without departing from the spirit and scope of the invention as set forth in the following claims. Industrial applicability

[0082] The present invention can be used to manufacture display devices and electronic devices including the same. For example, the present invention can be used to manufacture high-resolution smartphones, mobile phones, smartpads, smartwatches, tablet PCs, vehicle navigation systems, televisions, computer monitors, laptops, etc. Explanation of the symbols

[0083] 10: Chemical Vapor Deposition Unit 100: Chamber 200: Process gas supply unit 250: Susceptor 400: Cleaning gas supply unit 700: Power supply unit 300: Shower head 310: Top plate 330: Lower plate 331: Nozzles 331a: First nozzles 331b: Second nozzles 331c: Third nozzles

Claims

Claim 1 A chemical vapor deposition apparatus comprising: a chamber; a susceptor disposed inside the chamber and supporting a substrate; and a shower head for supplying gas into the chamber, comprising an upper plate including at least one injection port and a lower plate facing the upper plate, wherein the lower plate includes a plurality of first nozzles surrounding the center of the lower plate; corner nozzles spaced 750 mm to 1,100 mm from the center of the lower plate toward the corner portion of the lower plate, and a plurality of second nozzles surrounding the first nozzles; and a plurality of third nozzles disposed at the corner portion of the lower plate and partially surrounding a portion of the corner nozzles, wherein the second nozzles are arranged along at least one closed curve and the third nozzles are arranged along at least one open curve of the corner portion of the lower plate. Claim 2 A chemical vapor deposition apparatus according to claim 1, characterized in that the corner nozzles are defined as the second nozzles among the second nozzles that are furthest apart from the center of the lower plate. Claim 3 A chemical vapor deposition apparatus according to claim 1, wherein each of the first nozzles has a first length in the thickness direction of the lower plate, each of the second nozzles has a second length in the thickness direction of the lower plate, and the second length is greater than the first length. Claim 4 A chemical vapor deposition apparatus according to claim 3, wherein each of the third nozzles has a third length in the thickness direction of the lower plate, and the third length is greater than the second length. Claim 5 A chemical vapor deposition apparatus according to claim 4, wherein each of the second and third lengths is gradually increased in the direction from the center of the lower plate to the outermost edge of the lower plate. Claim 6 A chemical vapor deposition apparatus according to claim 4, characterized in that the difference between the first length and the third length of the third nozzle furthest from the center of the lower plate among the third nozzles is 0.5 mm to 4.5 mm. Claim 7 A chemical vapor deposition apparatus according to claim 1, characterized in that the first and second nozzles are arranged at equal intervals along a virtual straight line connecting the center of the lower plate and the corner of the lower plate. Claim 8 A chemical vapor deposition apparatus according to claim 7, characterized in that the third nozzles are arranged at equal intervals along a virtual straight line connecting the center of the lower plate and the corner of the lower plate. Claim 9 A chemical vapor deposition apparatus according to claim 1, characterized in that the first and second nozzles are arranged at equal intervals along an imaginary straight line connecting the center of the lower plate and the short or long side of the lower plate. Claim 10 A chemical vapor deposition apparatus according to claim 1, characterized in that the first nozzles are arranged in a circular shape or a polygonal shape. Claim 11 A chemical vapor deposition apparatus according to claim 1, characterized in that the second nozzles are arranged in a polygonal shape. Claim 12 A chemical vapor deposition apparatus according to claim 1, characterized in that the third nozzles are arranged in a round shape at the corner portion of the lower plate. Claim 13 A chemical vapor deposition apparatus according to claim 1, characterized in that the thickness of the center of the lower plate is thinner than the thickness of the corner portion of the lower plate. Claim 14 A chemical vapor deposition apparatus according to claim 13, characterized in that the upper surface of the lower plate has a flat upper surface and the lower surface of the lower plate has curvature. Claim 15 A chemical vapor deposition apparatus according to claim 1, wherein each of the first to third nozzles has a conical opening in which the width of the opening gradually decreases in the direction from the lower surface to the upper surface of the lower plate.

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