Solar cell and method for manufacturing the same

Abstract

The present invention relates to a solar cell and a method for manufacturing the same, and more specifically, to a solar cell for absorbing light, converting it into electrical energy, and outputting it, and a method for manufacturing the same. A solar cell according to an embodiment of the present invention comprises: a substrate; a transparent conductive oxide layer provided on one surface of the substrate; a plurality of electrode patterns arranged spaced apart from each other on the transparent conductive oxide layer; and an electrode line provided on the plurality of electrode patterns, extending along the arrangement direction of the plurality of electrode patterns.

Description

Technology Field

[0001] The present invention relates to a solar cell and a method for manufacturing the same, and more specifically, to a solar cell for absorbing light, converting it into electrical energy, and outputting it, and a method for manufacturing the same. Background Technology

[0003] A solar cell is a device that utilizes the properties of semiconductors to convert solar energy, or light, into electrical energy and output it.

[0004] A solar cell has a PN junction structure formed by joining a P-type (positive type) semiconductor and an N-type (negative type) semiconductor. When light is incident on a solar cell with this structure, holes and electrons are generated within the semiconductor due to the energy of the incident light. At this time, the holes move toward the P-type semiconductor and the electrons move toward the N-type semiconductor due to the electric field generated in the PN junction, thereby generating an electric potential and enabling the production of electrical energy, i.e., power.

[0005] Hetero-Junction (HJT) solar cells were developed to improve the photoelectric conversion efficiency of solar cells. Hetero-Junction solar cells have a structure in which amorphous semiconductor layers are disposed on both sides of a crystalline semiconductor layer. In addition, to compensate for the low electrical conductivity of the amorphous semiconductor layer, a transparent conductive oxide layer is provided as an auxiliary electrode on the amorphous semiconductor layer, and a metal electrode is provided on the transparent conductive oxide layer for electrical connection with an external circuit.

[0006] In heterojunction solar cells, metal electrodes are typically formed by screen-printing a metal paste onto a transparent conductive oxide layer and then firing it. However, since the metal paste is not a pure metal and contains a solvent, the solvent volatilizes during the firing process, resulting in a structure where metal particles adhere to the transparent conductive oxide layer in a point-contact manner. Consequently, there were problems such as increased contact resistance and low adhesion between the transparent conductive oxide layer and the metal electrode. Prior art literature

[0008] (Patent Document 0001) KR 10-2018-0032022 A The problem to be solved

[0009] The present invention provides a solar cell having improved adhesion characteristics and reduced interfacial resistance between a transparent conductive oxide layer and an electrode, and a method for manufacturing the same. means of solving the problem

[0011] A solar cell according to an embodiment of the present invention comprises: a substrate; a transparent conductive oxide layer provided on the substrate; a plurality of electrode patterns arranged spaced apart from each other on the transparent conductive oxide layer; and an electrode line provided on the plurality of electrode patterns, extending along the arrangement direction of the plurality of electrode patterns; wherein the plurality of electrode patterns have a thickness of 0.1 to 2 μm and 0.5 mΩ·cm 2 It has the following contact resistance.

[0012] The above electrode line may have a thickness of 10 to 100 μm.

[0013] The electrode pattern above can be formed by a deposition process, and the electrode line above can be formed by a printing process.

[0014] The plurality of electrode patterns are arranged along one direction, and the electrode line can be extended along the one direction.

[0015] The above plurality of electrode patterns and electrode lines can be formed of the same material.

[0017] In addition, a method for manufacturing a solar cell according to an embodiment of the present invention comprises: a step of providing a substrate; a step of forming a transparent conductive oxide layer on the substrate; a step of forming a plurality of electrode patterns arranged spaced apart from each other on the transparent conductive oxide layer; and a step of forming an electrode line extending along the arrangement direction of the plurality of electrode patterns on the plurality of electrode patterns; wherein the step of forming the plurality of electrode patterns comprises the plurality of electrode patterns having a resistance of 0.5 mΩ·cm 2 The plurality of electrode patterns can be formed with a thickness of 0.1 to 2 μm to have the following contact resistance.

[0018] The step of forming the plurality of electrode patterns includes the step of depositing the plurality of electrode patterns on the transparent conductive oxide layer; and the step of forming the electrode line may include the step of printing the electrode line on the plurality of electrode patterns.

[0019] The step of depositing the plurality of electrode patterns may include: a step of placing a mask member having a plurality of openings spaced apart along one direction on the transparent conductive oxide layer; and a step of supplying a metal-containing gas onto the transparent conductive oxide layer to pass through the mask member.

[0020] The step of providing the above substrate may involve providing a substrate having a plurality of irregularities on at least one surface. Effects of the invention

[0022] According to an embodiment of the present invention, by arranging a plurality of electrode patterns spaced apart from each other between a transparent conductive oxide layer and an electrode line, contact resistance can be reduced and adhesion characteristics can be improved.

[0023] That is, by placing a plurality of electrode patterns formed by a deposition process between a transparent conductive oxide layer and an electrode line formed by a printing process on the transparent conductive oxide layer, contact resistance can be reduced and adhesion characteristics can be improved. Brief explanation of the drawing

[0025] FIG. 1 is a diagram schematically showing the structure of a solar cell according to an embodiment of the present invention. FIG. 2 is a drawing showing a plurality of electrode patterns formed according to an embodiment of the present invention. FIG. 3 is a drawing showing the appearance of a mask member used to form a plurality of electrode patterns. FIG. 4 is a drawing showing electrode lines formed on a plurality of electrode patterns according to an embodiment of the present invention. FIG. 5 is a drawing showing a plurality of electrode patterns in contact on a transparent conductive oxide layer. Specific details for implementing the invention

[0026] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms, and the embodiments of the present invention are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention.

[0027] Throughout the specification, when it is mentioned that one component, such as a layer, film, region, or substrate, is located "on" another component, it may be interpreted that the one component is in direct contact "on" the other component, or that other components may exist interposed between them.

[0028] Additionally, relative terms such as "upper" or "lower" may be used herein to describe the relative relationship of certain elements to other elements as illustrated in the drawings. Relative terms are understood to be intended to include other directions of the element in addition to the directions depicted in the drawings. To illustrate the invention in detail, the drawings may be exaggerated, and like reference numerals in the drawings refer to like elements.

[0030] FIG. 1 is a schematic diagram showing the structure of a solar cell according to an embodiment of the present invention. FIG. 2 is a diagram showing a plurality of electrode patterns formed according to an embodiment of the present invention, and FIG. 3 is a diagram showing a mask member used to form a plurality of electrode patterns. FIG. 4 is a diagram showing electrode lines formed on a plurality of electrode patterns according to an embodiment of the present invention.

[0031] Referring to FIGS. 1 to 4, a solar cell according to an embodiment of the present invention comprises a substrate (110), a transparent conductive oxide layer (130) provided on the substrate (100), a plurality of electrode patterns (152) arranged spaced apart from each other on the transparent conductive oxide layer (130), and an electrode line (156) provided on the plurality of electrode patterns (152) extending along the arrangement direction of the plurality of electrode patterns (152).

[0032] The substrate (110) may include a semiconductor substrate. The semiconductor substrate may include crystalline silicon. That is, the semiconductor substrate may be formed of crystalline silicon including monocrystalline silicon or polycrystalline silicon.

[0033] The substrate (110) may have a first type of conductivity. To this end, the substrate (110) may contain, for example, a P-type (positive type) impurity. Such P-type impurities may include impurities of trivalent elements such as boron (B), gallium (Ga), and indium (In). However, alternatively, the substrate (110) may contain N-type (negative type) impurities. In this case, the N-type impurity may include impurities of pentavalent elements such as phosphorus (P), arsenic (As), and antimony (Sb).

[0034] The substrate (110) may have a plurality of irregularities on at least one surface. That is, the substrate (110) may have a plurality of irregularities on at least one surface that is textured.

[0035] The first semiconductor layer (120A) is provided on one side of the substrate (110), for example, on the front surface of the substrate (110), and may have a second conductivity type opposite to the conductivity type of the substrate (110). That is, the first semiconductor layer (120A) may be formed of amorphous silicon having a second conductivity type.

[0036] For example, if the substrate (110) has a P-type conductivity type, the first semiconductor layer (120A) may have an N-type conductivity type containing, for example, N-type impurities and form a PN junction with the substrate (110).

[0037] In such a PN junction, electron-hole pairs, which are carriers generated when light is incident on the substrate (110) from the outside, are separated into electrons and holes, and the electrons move toward the N-type and the holes move toward the P-type. Therefore, when the substrate (110) is P-type and the first semiconductor layer (120A) is N-type, the separated holes can move toward the substrate (110) and the separated electrons can move toward the first semiconductor layer (120A).

[0038] However, in the case where the substrate (110) has an N-type conductivity, the first semiconductor layer (120A) may have a P-type conductivity containing P-type impurities. In this case, separated electrons move toward the substrate (110), and separated holes can move toward the first semiconductor layer (120A).

[0039] When the first semiconductor layer (120A) has an N-type conductivity, the first semiconductor layer (120A) may be formed by doping with impurities of pentavalent elements such as phosphorus (P), arsenic (As), and antimony (Sb), and when the first semiconductor layer (120A) has a P-type conductivity, the first semiconductor layer (120A) may be formed by doping with impurities of trivalent elements such as boron (B), gallium (Ga), and indium (In).

[0040] A first transparent conductive oxide layer (130A) (TCO; Transparent Conductive Oxide) may be provided on the first semiconductor layer (120A). The first transparent conductive oxide layer (130A) serves to compensate for the low electrical conductivity of the first semiconductor layer (120A), which is formed as an amorphous semiconductor. The first transparent conductive oxide layer (130A) may include at least one of ITO (Indium Tin Oxide), GZO (Gallium Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGO (Indium Gallium Oxide), IZO (Indium Zinc Oxide), ZnO, and In2O3.

[0041] A first finger electrode (150A) is provided on the first transparent conductive oxide layer (130A). The first finger electrode (150A) is formed to extend in one direction and is provided in a spaced arrangement for electrical connection with an external circuit. Such first finger electrode (150A) can collect electrons that have moved to the first semiconductor layer (120A) having an N-type conductivity when the substrate (110) has a P-type conductivity, and can collect holes that have moved to the first semiconductor layer (120A) having a P-type conductivity when the substrate (110) has an N-type conductivity.

[0042] As described above, the solar cell may be formed as a one-sided light receiving type in which a first semiconductor layer (120A) is provided on the front surface of the substrate (110), a first transparent conductive oxide layer (130A) is provided on the first semiconductor layer (120A), and a first finger electrode (150A) is provided on the first transparent conductive oxide layer (130A). However, as shown in FIG. 1, it may be formed as a two-sided light receiving type in which a second semiconductor layer (120B) is provided on the rear surface of the substrate (110), a second transparent conductive oxide layer (130B) is provided on the rear surface of the second semiconductor layer (120B), and a second finger electrode (150B) is provided on the rear surface of the second transparent conductive oxide layer (130B). At this time, the second semiconductor layer (120B), the second transparent conductive oxide layer (130B), and the second finger electrode (150B) differ only in their formation positions from the aforementioned first semiconductor layer (120A), the first transparent conductive oxide layer (130A), and the first finger electrode (150A), so a redundant description thereof will be omitted.

[0043] As described above, in a heterojunction (HJT) solar cell capable of improving photoelectric conversion efficiency by having a structure in which amorphous semiconductor layers are disposed on both sides of a crystalline semiconductor layer, each finger electrode (150A, 150B) is generally formed by screen printing a metal paste onto a transparent conductive oxide layer (130) and then firing it. However, since the metal paste is not a pure metal and contains a solvent, the solvent volatilizes during the firing process of the metal paste, resulting in a structure in which metal particles are attached to the transparent conductive oxide layer (130) in a point contact form. Consequently, there was a problem in that the contact resistance between the transparent conductive oxide layer and the finger electrodes (150A, 150B) increased and the adhesion was low.

[0044] Accordingly, a solar cell according to an embodiment of the present invention is formed to include a plurality of electrode patterns (152) that are spaced apart from each other on a transparent conductive oxide layer (130) and an electrode line (156) that is formed to connect the plurality of electrode patterns (152) on the plurality of electrode patterns (152). As described above, the substrate (110) may have a plurality of irregularities on at least one surface that has been textured, and the transparent conductive oxide layer (130) may also have a plurality of irregularities; however, for convenience of explanation, FIGS. 2 and 4 illustrate a transparent conductive oxide layer (130) that does not have an irregular structure. Here, the plurality of electrode patterns (152) and the electrode line (156) each form a finger electrode (150A, 150B), and the plurality of electrode patterns (152) may be formed by a deposition process, and the electrode line (156) may be formed by a printing process.

[0045] A plurality of electrode patterns (152) are provided to reduce interfacial resistance between the transparent conductive oxide layer (130) and the electrode line (156) and to provide improved adhesion characteristics. Such a plurality of electrode patterns (152) may be arranged and provided on the transparent conductive oxide layer (130) so as to be spaced apart from each other. That is, the electrode patterns (152) may be formed in a plurality so as to be arranged along the extension direction of the electrode line (156) between the transparent conductive oxide layer (130) and the electrode line (156). For example, when viewed on the substrate (110), the electrode patterns (152) may have a dot shape, and the plurality of electrode patterns (152) may be formed such that the electrode patterns (152) are spaced apart from each other. Additionally, the electrode pattern (152) may have a circular or polygonal shape, and a plurality of electrode patterns (152) may be formed by arranging electrode patterns (152) having such a circular or polygonal shape in a mutually spaced direction. Furthermore, the electrode pattern (152) may have a circular or polygonal shape that extends along the direction of arrangement. In addition, the plurality of electrode patterns (152) may have various shapes in which electrode patterns (152) having a predetermined shape are arranged discontinuously. Moreover, the distance between the plurality of electrode patterns (152) may all be the same, or they may be arranged to have different spacing distances.

[0046] A plurality of electrode patterns (152) may be formed on the front surface of a transparent conductive oxide layer (130A) so as to be arranged along one direction, and an electrode line (156) may be formed on the plurality of electrode patterns (152) by extending along the arrangement direction of the plurality of electrode patterns (152). In this way, the plurality of electrode patterns (152) spaced apart in one direction and the electrode line (156) extended in one direction may form a first finger electrode (150A) formed on the front surface of the first transparent conductive oxide layer (130A). Additionally, a plurality of electrode patterns (152) may be formed on the rear surface of the second transparent conductive oxide layer (130B) so as to be arranged along one direction, and an electrode line (156) may be formed on the rear surface of the plurality of electrode patterns (152) by extending along the arrangement direction of the plurality of electrode patterns (152). In this way, a plurality of electrode patterns (152) spaced apart in one direction and an electrode line (156) extended in one direction can form a second finger electrode (150B) provided on the back surface of the second transparent conductive oxide layer (130A).

[0047] Such an electrode pattern (152) may contain silver (Ag) and may be formed by a deposition process. That is, the electrode pattern (152) may be formed by a physical vapor deposition (PVD) process such as a sputtering process, a conventional chemical vapor deposition (CVD) process in which a source gas and a reaction gas are supplied simultaneously, or an atomic layer deposition (ALD) process in which a source gas and a reaction gas are supplied. In this way, by forming the electrode pattern (152) by a deposition process, the electrode pattern (152) can be made surface contact with the transparent conductive oxide layer (130), thereby reducing contact resistance and improving adhesion.

[0048] The electrode pattern (152) can be formed by placing a mask member (M) on a transparent conductive oxide layer (130) and supplying a metal-containing gas to pass through the opening (H) of the mask member (M). Here, the mask member (M) may include a metal mask for depositing a thin film having a pattern in a deposition process.

[0049] Here, since the finger electrodes (150A, 150B) have a shape that extends in one direction, the electrode pattern (152) also needs to be formed with a shape that extends in one direction. However, in order to form the electrode pattern (152) to extend in one direction in the same way as the finger electrodes (150A, 150B), the opening (H) of the mask member (M) must be formed by extending it in one direction to the same length as the finger electrodes (150A, 150B). However, if the opening (H) is formed long in this way to have the same shape as the finger electrodes (150A, 150B), the rigidity of the mask member (M) is reduced, causing the mask member (M) to sag, and thus it becomes impossible to form the electrode pattern (152) of the desired shape. Accordingly, in an embodiment of the present invention, as shown in FIG. 3, at least one bridge portion (B) is formed in the mask member (M) in a direction intersecting the extension direction of the opening (H) and dividing the opening (H) into multiple parts, thereby preventing the mask member (M) from sagging. In this way, when forming an electrode pattern (152) using a mask member (M) having multiple openings (H) and a bridge portion (B), it is possible to form an electrode pattern (152) in which multiple parts are arranged along one direction while having at least one spaced area (154).

[0050] Here, the plurality of electrode patterns (152) may have a thickness of 0.1 to 2 μm. If the electrode patterns (152) are formed with a thickness of less than 0.1 μm, the effects of improving adhesion and reducing contact resistance are insufficient, and if they are formed with a thickness exceeding 2 μm, excessive time is required to form the electrode patterns (152); therefore, the plurality of electrode patterns (152) may be formed with a thickness of 0.1 to 2 μm. Furthermore, when such a plurality of electrode patterns (152) are formed with a thickness of 0.1 to 2 μm by a deposition process, the plurality of electrode patterns (152) have a thickness of 0.5 mΩ·cm 2 Below, more specifically 0 mΩ·cm 2 Exceeding , 0.5 mΩ·cm 2 It is possible to have the following low contact resistance.

[0051] The electrode line (156) may be formed to extend along the arrangement direction of the plurality of electrode patterns (152) on the plurality of electrode patterns (152). For example, the electrode line (156) may have a line shape that extends with a predetermined width along the arrangement direction of the plurality of electrode patterns (152) when viewed on the substrate (110). In addition, the electrode line (156) may have various shapes, such as a circle or a polygon, that extend continuously in one direction, that is, along the arrangement direction of the plurality of electrode patterns (152).

[0052] The electrode line (156) may contain the same material as the electrode pattern, namely silver (Ag), and is formed by a printing process. That is, the electrode line (156) may be formed by a printing process, such as screen printing, to quickly form finger electrodes (150A, 150B) having a desired thickness, for example, 10 to 100 μm. The electrode line (156) may be formed by a printing process using a mesh mask, etc. Since various techniques for screen printing metal paste can be applied to form the electrode line (156) by such a printing process, a detailed description thereof will be omitted.

[0054] FIG. 5 is a diagram showing a plurality of electrode patterns in contact on a conductive oxide layer. Here, FIG. 5(a) shows an electrode line formed on a conductive oxide layer by a direct printing process, and FIG. 5(b) shows a plurality of electrode patterns formed on a conductive oxide layer by a deposition process.

[0055] As illustrated in FIG. 5(a), when an electrode line (156) is formed by screen printing a metal paste onto a transparent conductive oxide layer (130), it can be seen that the solvent contained in the metal paste volatilizes, causing the electrode line (156) to adhere to the transparent conductive oxide layer (130) in the form of granules. In this way, when the transparent conductive oxide layer (130) is formed in a form where metal particles are in point contact, the electrode line (156) has a distance of 2 to 4 mΩ·cm between it and the transparent conductive oxide layer (130). 2 It has high contact resistance.

[0056] However, as illustrated in FIG. 5(b), when an electrode pattern (152) is formed on a transparent conductive oxide layer (130) by a deposition process, it can be seen that the electrode pattern (152) has a surface contact form in which more than 95% of the total area is in contact with the transparent conductive oxide layer (130). Accordingly, according to an embodiment of the present invention, the electrode pattern (152) is formed on the transparent conductive oxide layer (130) to have a contact structure that approximates an ideal surface contact, thereby having a contact resistance of 0.5 mΩ·cm 2 It is possible to lower it below and improve adhesion.

[0057] Here, since an electrode line (156) is formed on the electrode pattern (152) by a printing process, the electrode line (156) can be attached to the transparent conductive oxide layer (130) in the form of granules. However, as shown in FIG. 5(a), if the electrode line (156) is formed in the form of granules on the transparent conductive oxide layer (130), electrons or holes within the transparent conductive oxide layer (130) move along the transparent conductive oxide layer (130), which has much lower conductivity than the electrode line (156), until they come into contact with the electrode line (156), thereby increasing resistance. On the other hand, if the electrode line (156) is formed in the form of granules on the electrode pattern (152), electrons or holes within the transparent conductive oxide layer (130) move directly to the electrode pattern (152) and move along the electrode pattern (152), which has high conductivity, until they come into contact with the electrode line (156), thereby preventing a decrease in contact resistance.

[0059] Hereinafter, a method for manufacturing a solar cell according to an embodiment of the present invention will be described. The method for manufacturing a solar cell according to an embodiment of the present invention may be a method for manufacturing a solar cell having the aforementioned structure, and since the aforementioned details regarding solar cells can be applied as is, the description of redundant details will be omitted.

[0060] A method for manufacturing a solar cell according to an embodiment of the present invention comprises the steps of: providing a substrate (110); forming a transparent conductive oxide layer (130) on the substrate (110); forming a plurality of electrode patterns (152) arranged to be spaced apart from each other on the transparent conductive oxide layer (130); and forming an electrode line (156) extending along the arrangement direction of the plurality of electrode patterns (152) on the plurality of electrode patterns (152).

[0061] Here, the substrate (110) may have a first conductivity type, and after the step of providing the substrate (110), a step of forming a first semiconductor layer (120A) having a second conductivity type opposite to the conductivity type of the substrate (110) on one side of the substrate (110), for example, on the front surface of the substrate (110) may be performed. Additionally, after the step of providing the substrate (110), a step of forming a second semiconductor layer (120B) having a second conductivity type opposite to the conductivity type of the substrate (110) on the other side of the substrate (110), for example, on the rear surface of the substrate (110) may be performed. Furthermore, the step of providing the substrate (110) may, of course, involve texturing the substrate (110) having a plurality of irregularities on at least one side of the substrate (110) to provide a substrate (110) having a plurality of irregularities on at least one side.

[0062] The step of forming a transparent conductive oxide layer (130) involves forming a transparent conductive oxide layer (130) on at least one surface of a substrate (110). Here, as previously described, the transparent conductive oxide layer (130A) may include at least one of ITO (Indium Tin Oxide), GZO (Gallium Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), IGO (Indium Gallium Oxide), IZO (Indium Zinc Oxide), ZnO, and In2O3.

[0063] The step of forming a plurality of electrode patterns (152) involves forming a plurality of electrode patterns (152) arranged to be spaced apart from each other on the transparent conductive oxide layer (130). Here, the step of forming a plurality of electrode patterns (152) may include the step of depositing a plurality of electrode patterns (152) on the transparent conductive oxide layer (130). That is, the step of forming a plurality of electrode patterns (152) may be performed by a physical vapor deposition (PVD) process such as a sputtering process, a conventional chemical vapor deposition (CVD) process in which a source gas and a reaction gas are supplied simultaneously, or an atomic layer deposition (ALD) process in which a source gas and a reaction gas are supplied.

[0064] Here, the step of depositing a plurality of electrode patterns (152) may include the step of placing a mask member (M) having a plurality of openings (H) spaced apart along one direction on a transparent conductive oxide layer (130), and the step of supplying a metal-containing gas on the transparent conductive oxide layer (130) to pass through the mask member (M). Here, the mask member (M) may include a metal mask for depositing a thin film having a pattern in a deposition process, and the metal-containing gas may be a gas containing silver (Ag).

[0065] The step of forming an electrode line (156) involves forming an electrode line (156) that extends along the arrangement direction of the plurality of electrode patterns (152) on a plurality of electrode patterns (152). The electrode line (156) may contain the same material as the electrode pattern, namely silver (Ag), and the step of forming the electrode line (156) may include the step of printing the electrode line (156) on the plurality of electrode patterns (152). At this time, since various screen printing techniques for metal paste may be applied to the step of printing the electrode line (156), a detailed description thereof will be omitted.

[0067] In the foregoing, preferred embodiments of the present invention have been described and illustrated using specific terms, but such terms are intended solely to clarify the present invention, and it is obvious that various modifications and changes may be made to the embodiments and described terms of the present invention without departing from the technical spirit and scope of the following claims. Such modified embodiments should not be understood separately from the spirit and scope of the present invention, but should be considered to fall within the scope of the claims of the present invention. Explanation of the symbols

[0069] 110: Substrate 120A, 120B: Semiconductor layer 130A, 130B: Transparent conductive oxide layer 150A, 150B: Finger electrodes 152: Electrode pattern 156: Electrode line

Claims

Claim 1 A solar cell comprising: a substrate; a transparent conductive oxide layer provided on the substrate; and a plurality of finger electrodes arranged on the transparent conductive oxide layer, extending along one direction and spaced apart from each other in another direction intersecting the one direction; wherein the finger electrodes comprise: a plurality of electrode patterns arranged on the transparent conductive oxide layer, extending along the one direction and spaced apart from each other along the one direction; and an electrode line provided on the plurality of electrode patterns, extending along the one direction; wherein the plurality of electrode patterns are formed by a deposition process and the electrode line is formed by a printing process. Claim 2 In claim 1, the electrode line is a solar cell having a thickness of 10 to 100 μm. Claim 3 delete Claim 4 delete Claim 5 A solar cell according to claim 1, wherein the plurality of electrode patterns and electrode lines are formed of the same material. Claim 6 A method for manufacturing a solar cell comprising: a step of providing a substrate; a step of forming a transparent conductive oxide layer on the substrate; and a step of forming a plurality of finger electrodes on the transparent conductive oxide layer, which are arranged to be spaced apart from each other in a direction that extends along one direction and intersects the one direction; wherein the step of forming the finger electrodes comprises: a step of forming a plurality of electrode patterns on the transparent conductive oxide layer, which are arranged to be spaced apart from each other along the one direction; and a step of forming an electrode line extending along the one direction on the plurality of electrode patterns; wherein the step of forming the plurality of electrode patterns comprises: a step of depositing a plurality of electrode patterns on the transparent conductive oxide layer; and the step of forming the electrode line comprises: a step of printing an electrode line on the plurality of electrode patterns. Claim 7 delete Claim 8 A method for manufacturing a solar cell according to claim 6, wherein the step of depositing a plurality of electrode patterns comprises: a step of placing a mask member having a plurality of openings spaced apart along one direction on the transparent conductive oxide layer; and a step of supplying a metal-containing gas on the transparent conductive oxide layer to pass through the mask member. Claim 9 ◈Claim 9 was abandoned upon payment of the registration fee.◈ In Claim 6, the step of providing the substrate comprises providing a substrate having a plurality of irregularities on at least one surface, a method for manufacturing a solar cell.

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