Magnetoresistance element with corrected temperature coefficient of TMR

Abstract

The magnetoresistance element (2) according to the present invention comprises a reference layer (23), a ferromagnetic sensing layer (21) having a free sensing magnetization (210), and a tunnel barrier layer (22) between the reference layer (23) and the sensing layer (21). The sensing layer (21) comprises a first sensing layer portion (211) in contact with the tunnel barrier layer (22) and a second sensing layer portion (212) in contact with the first sensing layer portion (211). The first sensing layer portion (211) has a magnetic coupling between the first and second sensing layers (211, 212) between ±10-4 J / m² and ±10-3 J / m²; The perpendicular magnetic anisotropy (PMA) generated from the interface between the first sensing layer (211) and the tunnel barrier layer (22) is configured to be between 8×104 A / m and 8×105 A / m to shift the sensitivity temperature coefficient (TCS) of the magnetoresistive element (2) to a positive value and correct the negative temperature coefficient of the TMR of the magnetoresistive element (2).

Images