Gas supply module and substrate processing apparatus having the same

Abstract

The present invention relates to a gas supply module and a substrate processing device including the same, and more specifically, to a gas supply module that performs substrate processing by supplying gas through vaporization and a substrate processing device including the same. The present invention discloses a gas supply module of a substrate processing device comprising: a process chamber (10) having an internal processing space (S1) and an inlet port (12) for introducing process gas; and a gas supply module (20) installed at the inlet port (12) and supplying the process gas to the processing space (S1) through vaporization using ultrasound. The gas supply module comprises: an atomizing unit (100) that receives a processing liquid from the outside and atomizes it using ultrasound and sprays it; and a body unit (200) installed between the atomizing unit (100) and the process chamber (10), having a vaporization space (S2) formed internally that communicates with the processing space (S1), and vaporizing a fluid received from the atomizing unit (100) into the process gas through the low-pressure vaporization space (S2) and supplying it to the processing space (S1).

Description

Technology Field

[0001] The present invention relates to a gas supply module and a substrate processing device including the same, and more specifically, to a gas supply module that performs substrate processing by supplying gas through vaporization and a substrate processing device including the same. Background Technology

[0002] Generally, a vaporizer is configured to receive raw materials in a liquid state to perform substrate processing, vaporize the raw materials, and supply them to a process chamber in a gaseous state, vaporizing the liquid raw materials through heating with a heater.

[0003] More specifically, a conventional vaporizer includes a pipe for delivering raw materials in a liquid state, and a preheating section, a vaporization section, and a flow control section connected between the pipes, wherein the raw materials supplied through the pipes are preheated through the preheating section and delivered to the vaporization section, and the preheated raw materials are vaporized through heating in the vaporization section and supplied as gas by passing through the flow control section and the pipes.

[0004] In this case, conventional vaporizers have problems such as difficult maintenance due to their complex structures, large device size resulting in reduced space utilization, and decreased energy efficiency and increased costs as the device grows, as thermal energy must be continuously supplied to the entire system including the piping.

[0005] In particular, conventional vaporizers are configured to supply gas by vaporizing a liquid through heating with a heater, and since they are highly sensitive to temperature, there is a problem in that condensation occurs and vaporization performance deteriorates when the temperature drops in some areas.

[0006] In addition, conventional vaporizers utilize a liquid vaporization method through heating, and due to the device configuration, there is a limitation on the gas flow rate that can be vaporized and supplied, which presents a problem in that it is impossible to supply a large volume of gas for processing large-area substrates. The problem to be solved

[0007] The objective of the present invention is to provide a gas supply module capable of supplying a large volume of gas through vaporization and a substrate processing device including the same, in order to solve the above-mentioned problem. means of solving the problem

[0008] The present invention is created to achieve the above-mentioned purpose of the present invention, and the present invention discloses a gas supply module comprising: an atomizing unit (100) that receives a processing liquid from the outside and atomizes it using ultrasound and sprays it; and a body unit (200) that is coupled to the atomizing unit (100) and has a vaporization space (S2) formed inside, which vaporizes the atomized fluid received from the atomizing unit (100) by creating a low-pressure environment in the vaporization space (S2).

[0009] A heater part (300) installed on at least a portion of the outer surface of the body part (200) to heat the vaporization space (S2) may be additionally included.

[0010] The above atomizing unit (100) may include a main body (110) forming an internal space that receives the processing liquid from the outside, an ultrasonic vibration unit (120) that atomizes the processing liquid through vibration in the internal space, and a nozzle unit (130) provided at the end of the main body (110) that sprays the atomized fluid toward the body unit (200).

[0011] A controller (40) that controls the frequency and amplitude of the ultrasonic vibration unit (120) according to the pressure of the vaporization space (S2) and the supply flow rate of the fluid sprayed into the vaporization space (S2) may be additionally included.

[0012] The above body part (200) may include a body main body (210) having the atomizing part (100) connected at one end and the other end connected to the inlet port (12) outside the process chamber (10), and a baffle plate (220) installed inside the body main body (210) and having a plurality of through holes formed therein.

[0013] The above body body (210) may include an upper body body (211) provided on the upper side relative to the baffle plate (220) and forming an upper vaporization space (S21) inside, and a lower body body (212) provided on the lower side relative to the baffle plate (220) and forming a lower vaporization space (S22) inside.

[0014] The above body part (200) may additionally include an inclined part (230) provided on at least a part of the inner surface of the body body (210) such that the inner diameter gradually or stepwise decreases as it goes downward.

[0015] The above-mentioned inclined portion (230) is formed at a position adjacent to the process chamber (10) on the inner surface of the body body (210), and the lowest inner diameter may be formed to be the same as the inner diameter of the inlet port (12).

[0016] The above body part (200) can perform vaporization of the fluid by reducing the pressure of the vaporization space (S2) to a vaporization pressure lower than a preset atmospheric pressure.

[0017] The above vaporization pressure may be less than 10 Torr.

[0018] In addition, the present invention discloses a substrate processing apparatus comprising: a process chamber (10) having an internal processing space (S1) and an inlet port (12) for introducing process gas; and a gas supply module (20) installed in the inlet port (12) and supplying the process gas to the processing space (S1) through vaporization using ultrasound.

[0019] It may include a gas diffusion unit (30) installed in the inlet port (12) within the processing space (S1) to diffuse the process gas delivered through the inlet port (12).

[0020] The above gas diffusion section (30) may form a diffusion space (S3) inside and may include a plurality of side penetration holes (32) formed on the side and a plurality of bottom penetration holes (31) formed on the bottom.

[0021] The above gas diffusion section (30) may have a shape of any one of a circular, elliptical, or polygonal shape on a plane.

[0022] The above body part (200) has the vaporization space (S2) connected to the processing space (S1), so that the pressure of the vaporization space (S2) can be linked according to the pressure of the processing space (S1).

[0023] The pressure of the processing space (S1) can be maintained lower than the pressure of the vaporization space (S2).

[0024] It may include a connecting pipe section (70) that connects an external storage tank (50) for storing the above-mentioned processing liquid and the atomizing section (100) to deliver the above-mentioned processing liquid.

[0025] The above connecting pipe section (70) may include a connecting pipe (71) connecting the storage tank (50) and the atomizing section (100), and a liquid control valve (72) installed in the connecting pipe (71) to control the supply flow rate of the processing liquid, and to maintain the connecting pipe (71) on the atomizing section (100) side in a vacuum state and the connecting pipe (71) on the storage tank (50) side in an atmospheric pressure state by blocking the connecting pipe (71). Effects of the invention

[0026] The gas supply module according to the present invention and the substrate processing device including the same supply process gas by vaporizing a fluid atomized through ultrasonic and pressure conditions. Since the structure of the gas supply module is simple, maintenance is easy, and there is an advantage of cost reduction compared to the vaporization method through heating.

[0027] The gas supply module according to the present invention and the substrate processing device including the same supply process gas by vaporizing the processing liquid through atomization and spraying, thereby enabling the supply of a large flow rate of process gas and providing the advantage of sufficient process gas supply for processing large-area substrates.

[0028] In addition, the gas supply module according to the present invention and the substrate processing device including the same induce vaporization of the processing liquid through pressure linkage with the process chamber without the need for separate additional pressure control within the gas supply module, thereby having the advantage that vaporization is possible simply by installing it in an existing process chamber without any additional configuration.

[0029] In addition, the gas supply module according to the present invention and the substrate processing device including the same have the advantage of preventing re-condensation after vaporization by heating the vaporization space within the body part, and enabling uniform diffusion and injection of process gas into the process chamber through the gas diffusion part. Brief explanation of the drawing

[0030] FIG. 1 is a diagram showing a schematic view of a substrate processing apparatus according to the present invention. FIG. 2 is an exploded perspective view showing the appearance of a gas supply module among the substrate processing apparatus according to FIG. 1. FIG. 3 is a drawing showing an embodiment of a diffusion section of a substrate processing apparatus according to FIG. 1. FIG. 4 is a drawing showing another embodiment of the diffusion section of the substrate processing apparatus according to FIG. 1. FIG. 5 is a graph (F1) showing the gas supply flow rate through the gas supply module of a conventional substrate processing device and a graph (F2) showing the gas supply flow rate through the gas supply module of a substrate processing device according to the present invention. Specific details for implementing the invention

[0031] Hereinafter, a gas supply module according to the present invention and a substrate processing device including the same will be described with reference to the attached drawings.

[0032] A substrate processing device according to the present invention includes, as shown in FIG. 1, a process chamber (10) having a processing space (S1) formed inside and an inlet port (12) for introducing process gas; and a gas supply module (20) installed in the inlet port (12) and supplying the process gas to the processing space (S1) through vaporization using ultrasound.

[0033] In addition, the substrate processing device according to the present invention may include a gas diffusion unit (30) installed in an inlet port (12) within a processing space (S1) to diffuse process gas delivered through the inlet port (12).

[0034] In addition, the substrate processing device according to the present invention may include a connecting pipe section (70) that connects an external storage tank (50) for storing the processing liquid and an atomizing section (100) to deliver the processing liquid.

[0035] Here, the substrate subject to substrate processing is a configuration in which substrate processing such as etching and deposition is performed, and any substrate such as a semiconductor manufacturing substrate, an LCD manufacturing substrate, an OLED manufacturing substrate, a solar cell manufacturing substrate, or a transparent glass substrate can be applied.

[0036] The above process chamber (10) is configured to form a processing space (S1) inside and an inlet port (12) for introducing process gas, and various configurations are possible.

[0037] For example, the process chamber (10) may be a single configuration in which the upper surface, lower surface, and side surface are integrally formed, and an inlet port (12) is formed on the upper surface and a gas supply module (20) is installed.

[0038] In addition, as another example, the process chamber (10) may include a chamber body with an open upper side and an upper lead detachably coupled to the opening of the chamber body, and may be configured such that an inlet port (12) is formed on the upper lead and a gas supply module (20) is installed.

[0039] The above chamber body is configured such that a substrate support member, etc. is installed, and various configurations are possible, and one or more gates may be formed on the inner wall for introducing and discharging a substrate into the processing space (S1).

[0040] The above upper lead is configured to cover the opening of the chamber body to form a sealed processing space (S1) together with the chamber body, and any configuration is applicable.

[0041] For example, the upper lead can be configured in various ways, such as a frame shape having an opening in the center so that a gas supply module (20) can be installed.

[0042] The above-mentioned substrate support is configured to support a substrate by being installed on the lower side of the processing space (S1) within the process chamber (10), and various configurations are possible.

[0043] For example, the substrate support member (20) may include a substrate mounting member on which a substrate is mounted, and a support shaft installed on the lower side of the substrate mounting member so that the substrate mounting member can move up and down.

[0044] The above-mentioned substrate support may be installed to enable vertical movement for the introduction and removal of the substrate through the gate, and furthermore, a temperature control member such as a heater may be additionally installed for temperature control, such as heating or cooling the substrate.

[0045] Meanwhile, the above process chamber (10) may have an exhaust port (11) formed on the bottom surface that is connected to an external pump (60) for exhausting the processing space (S1) and controlling the pressure in the processing space (S1).

[0046] At this time, the process chamber (10) can perform exhaust of the processing space (S1) through an external pump (60), and in particular, form a process atmosphere by creating a vacuum state in the processing space (S1), and furthermore, the vaporization space (S2) of the gas supply module (20) described later can also be formed at a low pressure lower than atmospheric pressure, particularly a vacuum pressure, to induce vaporization.

[0047] That is, while the processing space (S1) within the process chamber (10) and the vaporization space (S2) within the body part (200) of the gas supply module (20) are connected, the processing space (S1) is formed into a vacuum state through the exhaust port (11) connected to the external pump (60), thereby depressurizing the vaporization space (S2) and inducing it into a vacuum state. This allows the fluid that has been atomized and sprayed through the atomizing part (100) to be vaporized in the vaporization space (S2), and a detailed explanation thereof will be provided later.

[0048] The above gas diffusion unit (30) is configured to be installed in the inlet port (12) within the processing space (S1) and to diffuse the process gas delivered through the inlet port (12), and various configurations are possible.

[0049] For example, the gas diffusion section (30) may be a plate having a plurality of perforated injection holes formed therein, and may be installed so as to overlap in plane with the inlet port (12) within the processing space (S1).

[0050] In addition, as another example, the gas diffusion unit (30) may be configured to have a side surface and a bottom surface, such that an inlet port (12) is positioned inside the ceiling surface of the process chamber (10) to form a diffusion space (S3).

[0051] At this time, the gas diffusion section (30) forms a diffusion space (S3) inside and includes a plurality of side penetration holes (32) formed on the side and a plurality of bottom penetration holes (31) formed on the bottom surface. A plurality of side penetration holes (32) for gas diffusion and injection can be formed not only on the bottom surface but also on the side surface.

[0052] At this time, the gas diffusion section (30) may have a shape among a circular, elliptical, and polygonal shape on a plane, and may be formed in a shape corresponding to the planar shape of the inlet port (12) or the planar shape of the process chamber (10).

[0053] For example, the gas diffusion section (30) may be formed in the shape of a rectangular shape in a planar form, with the top surface omitted, as shown in FIG. 3, and as another example, as shown in FIG. 4, it may be formed in the shape of a cylinder with the top surface omitted, with the top surface omitted, as a circular shape in a planar form.

[0054] The above connecting pipe section (70) may be configured to connect an external storage tank (50) that stores the processing liquid and atomizing section (100) of the gas supply module (20) described later to deliver the processing liquid.

[0055] Here, the processing liquid is configured to be supplied by vaporizing it into a process gas for substrate processing according to the present invention, and may be, for example, water (H2O).

[0056] The above connecting pipe section (70) may be configured to connect a storage tank (50) in which an external processing liquid is stored and a gas supply module (20), and to form a flow path through which the processing liquid flows to deliver the processing liquid to the gas supply module (20).

[0057] For example, the above connecting pipe section (70) may include a connecting pipe (71) connecting the storage tank (50) and the atomizing section (100), and a liquid control valve (72) installed in the connecting pipe (71) to control the flow of the processing liquid, and to maintain the connecting pipe (71) on the atomizing section (100) side in a vacuum state and the connecting pipe (71) on the storage tank (50) side in an atmospheric pressure state by blocking the connecting pipe (71).

[0058] Additionally, the above connecting pipe section (70) may further include an opening / closing valve (73) that is provided adjacent to the storage tank (50) side among the connecting pipes (71) and supplies or blocks the processing liquid by opening or closing the connecting pipe (71).

[0059] The above connecting pipe (71) is configured to connect the storage tank (50) and the atomizing unit (100), and may be configured to have a flow path formed therein through which the processing liquid flows.

[0060] The above liquid control valve (72) may be configured to be installed on the connecting pipe (71) to control the supply flow rate of the processing liquid.

[0061] That is, the liquid control valve (72) can appropriately control the supply flow rate of the processing liquid by controlling the degree of opening of the connecting pipe (71), thereby controlling the supply flow rate of the process gas after vaporization.

[0062] Accordingly, the above liquid control valve (72) controls the supply flow rate of process gas by controlling the flow rate of the liquid before vaporization compared to the conventional configuration that controls the supply flow rate of vaporized process gas, and thus has the advantage of improved control precision and easier control.

[0063] In addition, the liquid control valve (72) can maintain the connecting pipe (71) located at the rear end relative to the liquid control valve (72), i.e., the connecting pipe (71) on the gas supply module (20) side, in a vacuum state when the valve is closed, and maintain the connecting pipe (71) located at the front end, i.e., the connecting pipe (71) on the storage tank (50) side, in an atmospheric pressure state.

[0064] The above-mentioned opening / closing valve (73) is configured to be adjacent to the storage tank (50) side of the connecting pipe (71) and to supply or block the processing liquid by opening or closing the connecting pipe (71), and various configurations are possible.

[0065] That is, the above-mentioned opening / closing valve (73) is provided at a position adjacent to the storage tank (50) side, upstream of the liquid control valve (72) in the connecting pipe (71), so that the processing liquid can be supplied or blocked by opening or closing.

[0066] The above gas supply module (20) is installed in the inlet port (12) and is configured to supply process gas to the processing space (S1) through vaporization using ultrasound, and various configurations are possible.

[0067] That is, the above gas supply module (20) can vaporize the processing liquid into a process gas through vaporization using ultrasound and pressure, rather than the conventional vaporization method through heating, and supply it to the processing space (S1).

[0068] The gas supply module according to the present invention will be described in detail below with reference to the attached drawings.

[0069] The gas supply module according to the present invention is a gas supply module of a substrate processing device comprising, as shown in FIG. 2, a process chamber (10) having an internal processing space (S1) and an inlet port (12) for introducing process gas, and a gas supply module (20) installed at the inlet port (12) and supplying the process gas to the processing space (S1) through vaporization using ultrasound; the gas supply module comprises an atomizing unit (100) that receives a processing liquid from the outside and atomizes it using ultrasound and sprays it; and a body unit (200) that is installed between the atomizing unit (100) and the process chamber (10), and has a vaporization space (S2) formed internally that communicates with the processing space (S1), and supplies the fluid received from the atomizing unit (100) to the processing space (S1) by creating a low-pressure environment in the vaporization space (S2) to vaporize the fluid into the process gas and supply it to the processing space (S1).

[0070] In addition, the gas supply module according to the present invention may further include a heater part (300) installed on at least a part of the outer surface of the body part (200) to heat the vaporization space (S2).

[0071] The above-mentioned atomizing unit (100) is configured to receive a processing liquid from the outside, atomize it using ultrasound, and spray it, and various configurations are possible.

[0072] That is, the above-mentioned atomizing unit (100) may be configured such that the connecting pipe (71) of the aforementioned connecting pipe unit (70) is connected to receive a processing liquid, and the supplied processing liquid is atomized using ultrasound.

[0073] For example, the atomizing unit (100) may include a main body (110) forming an internal space that receives a processing liquid from the outside, an ultrasonic vibration unit (120) that atomizes the processing liquid through vibration in the internal space, and a nozzle unit (130) provided at the end of the main body (110) that sprays the atomized fluid toward the body unit (200).

[0074] The above main body (110) may be configured such that its upper end is connected to the connecting pipe (70) to receive the processing liquid and forms an internal space to accommodate the received processing liquid.

[0075] The above ultrasonic vibration unit (120) is configured to generate ultrasonic waves through vibration in an internal space to atomize the processing liquid, and various configurations are possible.

[0076] That is, the ultrasonic vibration unit (120) is composed of a piezoelectric element, and is subjected to control power according to a control signal of a controller described later, vibrating at a frequency of 40 to 80 kHz to generate ultrasonic waves, thereby enabling the processing liquid in the internal space to be atomized, i.e., misted.

[0077] The nozzle part (130) may be configured such that at least a portion of it is positioned at the end of the main body part (110), more specifically at the bottom, into the vaporization space (S2) of the body part (100) described later, and sprays a finely atomized fluid through the ultrasonic vibration part (120) toward the vaporization space (S2) of the body part (100).

[0078] Meanwhile, the gas supply module according to the present invention may be equipped with a controller (40) that controls the frequency and amplitude of the ultrasonic vibration unit (120) according to the pressure of the vaporization space (S2) and the supply flow rate of the fluid injected into the vaporization space (S2). At this time, the controller (40) can induce power control supplied to the ultrasonic vibration unit (120) by transmitting a control signal to control the ultrasonic vibration unit (120).

[0079] At this time, the controller (40) can increase energy efficiency by making the frequency of the ultrasonic vibration unit (120) relatively small, as conditions are formed where vaporization can occur more easily when the pressure of the vaporization space (S2) is low, and can control the frequency of the ultrasonic vibration unit (120) relatively large, as vaporization cannot occur more easily when the pressure of the vaporization space (S2) is relatively high.

[0080] Additionally, the controller (40) may control the amplitude of the ultrasonic vibration unit (120) to increase the supply flow rate of the fluid supplied to the vaporization space (S2), and control the amplitude of the ultrasonic vibration unit (120) to decrease the supply flow rate of the fluid supplied to the vaporization space (S2).

[0081] Meanwhile, the above-mentioned atomizing unit (100) is configured such that its internal space is connected to the vaporization space (S2) of the body unit (200) described later, and can be formed into a low-pressure atmosphere in conjunction with the vacuum pressure of the vaporization space (S2), but can be maintained at a relatively higher pressure than the vaporization space (S2) as it is located at a position further from the processing space (S1) than the vaporization space (S2) where the processing liquid is contained.

[0082] The above body part (200) may be configured such that it is installed between the atomizing part (100) and the process chamber (10), and a vaporization space (S2) is formed inside that communicates with the processing space (S1), and the fluid received from the atomizing part (100) is vaporized into a process gas through the low-pressure environment of the vaporization space (S2) and supplied to the processing space (S1).

[0083] For example, the body part (200) may be coupled to the upper side of the process chamber (10) corresponding to the inlet port (12) formed on the upper surface of the process chamber (10) described above, and the atomizing part (100) described above may be coupled to the upper side and installed, and an opening (201) may be formed through which a nozzle part (130) passes to spray fluid into a vaporization space (S2).

[0084] For example, the body part (200) may include a body body (210) having a pulverizing part (100) attached to one end and an inlet port (12) attached to the other end outside the process chamber (10), as shown in FIG. 2, and a baffle plate (220) installed inside the body body (210) and having a plurality of through holes formed therein.

[0085] Additionally, the body part (200) may further include an inclined part (230) provided on at least a portion of the inner surface of the body body (210) such that the inner diameter gradually or stepwise decreases as it goes downward.

[0086] The above body body (210) may be configured such that the atomizing part (100) is connected to the upper part and the lower part is connected to the upper surface introduction port (12) of the process chamber (10).

[0087] For example, the above body body (210) may be a single integrated component in which a vaporization space (S2) is formed inside and a baffle plate (220) is installed.

[0088] Additionally, as another example, the body body (210) may include an upper body body (211) provided on the upper side relative to the baffle plate (220) and forming an upper vaporization space (S21) inside, and a lower body body (212) provided on the lower side relative to the baffle plate (220) and forming a lower vaporization space (S22) inside.

[0089] At this time, the upper body (211) is configured such that the lower surface is open and an open baffle plate (220) is installed and connected to the baffle plate (220) through a flange, and an upper vaporization space (S21) can be formed inside.

[0090] At this time, the upper vaporization space (S21) can be maintained in a vacuum pressure state as the pressure is linked with that of the processing space (S1) described later, and as the fluid sprayed in a finely atomized form through the nozzle part (130) is exposed to the vacuum pressure atmosphere, active vaporization can occur.

[0091] The above lower body (212) may be configured such that its upper surface is open, a baffle plate (220) is installed on the upper surface, and an outlet corresponding to the inlet (12) is formed on the lower surface.

[0092] At this time, the lower body (212) can be installed by being coupled to the baffle plate (220) and the upper surface of the process chamber (10) through the upper and lower flanges, respectively, and at this time, the inlet port (12) and the outlet port correspond to each other so that the process gas discharged through the outlet port can be sprayed into the processing space (S1) through the inlet port (12) and the diffusion section (30).

[0093] Meanwhile, the lower body (212) can form a lower vaporization space (S22) inside, and the lower vaporization space (S22) can prevent re-condensation of the process gas delivered through vaporization by maintaining a temperature above a certain level inside through the heater unit (300) described later.

[0094] In addition, the lower body (212) functions as a buffer space between the upper vaporization space (S21), where most of the fluid is vaporized, and the processing space (S1), thereby preventing the fluid from being supplied to the processing space (S1) in a misted particulate state without vaporization occurring, and can provide a space where complete vaporization of the fluid can occur.

[0095] The above baffle plate (220) is installed inside the body body (210) and is configured to have a plurality of through holes formed therein, and may be configured to induce the diffusion of process gas generated by vaporization in the vaporization space (S2).

[0096] At this time, the baffle plate (220) is a plate-shaped plate installed horizontally between the upper body body (211) and the lower body body (212) described above, and has a plurality of through holes formed in the vertical direction to diffuse and deliver process gas.

[0097] The above-mentioned inclined portion (230) may be configured such that the inner diameter of at least a part of the inner surface of the body (210) gradually or stepwise decreases as it goes downward.

[0098] For example, the inclined portion (230) may be configured such that it is provided on the lower side of the lower body (212) and protrudes toward the inner side as it goes downward, so that the inner diameter gradually decreases. In this case, the inclined portion (230) may be formed at a position adjacent to the process chamber (10) on the inner side of the body (210), and the lowest inner diameter may be formed to be the same as the inner diameter of the inlet (12).

[0099] Meanwhile, the body part (200) can vaporize the fluid sprayed from the nozzle part (130) into a finely atomized fluid state by maintaining the pressure of the vaporization space (S2) in a low-pressure state with a vaporization pressure lower than a preset atmospheric pressure.

[0100] That is, by utilizing a phase transition in which a phase change occurs from a micronized liquid state to a gaseous state depending on pressure conditions, the vaporization of a liquid delivered in the form of mist can be induced through the pressure atmosphere of a vaporization space (S2) in a vacuum pressure state.

[0101] At this time, the vaporization pressure may be less than 10 Torr as a vacuum pressure, more preferably less than 1 Torr.

[0102] Meanwhile, the above-described body part (200) can create a vacuum pressure atmosphere to induce vaporization by linking the vaporization space (S2) according to the pressure of the processing space (S1) of the aforementioned process chamber (10), and at this time, the vaporization space (S2) can be maintained at the same pressure as the processing space (S1) or at a lower pressure than that of the vaporization space (S2).

[0103] The heater unit (300) is configured to be installed on at least a part of the outer surface of the body unit (200) to heat the vaporization space (S2), and various configurations are possible.

[0104] That is, the heater unit (300) is installed on the outer surface of at least one of the body unit (200), more specifically the upper body main body (211), the lower body main body (212), and the baffle plate (220), to heat the heat and prevent re-condensation of the process gas vaporized in the vaporization space (S2).

[0105] As shown in FIG. 5, the gas supply module according to the present invention can significantly improve the supply flow rate per unit time compared to a conventional gas supply module. More specifically, while the first supply flow rate (F1) was limited to 10 ml per minute when using a conventional gas supply module and substrate processing device, experimental results confirmed that the supply flow rate increased by more than three times to a second supply flow rate (F2) of 30 ml per minute when using the gas supply module and substrate processing device according to the present invention.

[0106] Thus, the gas supply module according to the present invention can provide a supply flow rate that is dramatically increased compared to conventional methods, and accordingly, has the advantage of being able to supply a large volume of gas without limitation.

[0108] The foregoing merely describes some preferred embodiments that can be implemented by the present invention. As is well known, the scope of the present invention should not be interpreted as being limited to the above embodiments, and all technical concepts that share the fundamental principles with the technical concept of the present invention described above shall be considered to be included within the scope of the present invention. Explanation of the symbols

[0109] 10: Process Chamber 20: Gas Supply Module 30: Gas diffusion section 100: Atomization section 200: Body part 300: Heater part

Claims

Claim 1 A gas supply module installed at the inlet (12) of a process chamber (10) that forms a processing space (S1) inside, and supplies process gas to the processing space (S1), comprising: an atomizing unit (100) that receives a processing liquid from the outside and atomizes it using ultrasound and sprays it; and a body unit (200) that is coupled to the atomizing unit (100) and has a vaporization space (S2) formed inside, and vaporizes the atomized fluid received from the atomizing unit (100) by creating a low-pressure environment in the vaporization space (S2). The atomizing unit (100) comprises a main body unit (110) that forms an internal space receiving the processing liquid from the outside, an ultrasonic vibration unit (120) that atomizes the processing liquid through vibration in the internal space, and a nozzle unit (130) provided at the end of the main body unit (110) that sprays the atomized fluid toward the body unit (200). A gas supply module further comprising a controller (40) that controls the frequency and amplitude of the ultrasonic vibration unit (120) according to the pressure of the vaporization space (S2) and the supply flow rate of the fluid injected into the vaporization space (S2). Claim 2 A gas supply module according to claim 1, further comprising a heater part (300) installed on at least a part of the outer surface of the body part (200) to heat the vaporization space (S2). Claim 3 delete Claim 4 delete Claim 5 A gas supply module according to claim 1, wherein the body part (200) comprises a body main body (210) having one end coupled to the atomizing part (100) and the other end coupled to the inlet port (12) outside the process chamber (10), and a baffle plate (220) installed inside the body main body (210) and having a plurality of through holes formed therein. Claim 6 A gas supply module according to claim 5, wherein the body body (210) comprises an upper body body (211) provided on the upper side relative to the baffle plate (220) and forming an upper vaporization space (S21) inside, and a lower body body (212) provided on the lower side relative to the baffle plate (220) and forming a lower vaporization space (S22) inside. Claim 7 A gas supply module according to claim 5, wherein the body portion (200) further comprises an inclined portion (230) provided on at least a part of the inner surface of the body body (210) such that the inner diameter gradually or stepwise decreases as it goes downward. Claim 8 A gas supply module according to claim 7, wherein the inclined portion (230) is formed at a position adjacent to the process chamber (10) on the inner surface of the body body (210), and the lowest inner diameter is formed to be the same as the inner diameter of the inlet port (12). Claim 9 A gas supply module according to claim 1, wherein the body part (200) performs vaporization of the fluid by reducing the pressure of the vaporization space (S2) to a vaporization pressure lower than a preset atmospheric pressure. Claim 10 A gas supply module according to claim 9, wherein the vaporization pressure is less than 10 Torr. Claim 11 A substrate processing apparatus comprising: a process chamber (10) having an internal processing space (S1) and an inlet port (12) for introducing process gas; and a gas supply module (20) according to any one of claims 1, 2, 5 to 10, which is installed in the inlet port (12) and supplies the process gas to the processing space (S1) through vaporization using ultrasound. Claim 12 A substrate processing apparatus according to claim 11, characterized by including a gas diffusion unit (30) installed in the inlet port (12) within the processing space (S1) and diffusing the process gas delivered through the inlet port (12). Claim 13 A substrate processing apparatus according to claim 12, wherein the gas diffusion section (30) forms a diffusion space (S3) inside and includes a plurality of side penetration holes (32) formed on the side and a plurality of bottom penetration holes (31) formed on the bottom surface. Claim 14 A substrate processing apparatus according to claim 12, wherein the gas diffusion part (30) has a shape among a circular, elliptical, and polygonal shape on a plane. Claim 15 A substrate processing device according to claim 11, wherein the body part (200) is characterized in that the vaporization space (S2) is in communication with the processing space (S1), and the pressure of the vaporization space (S2) is linked to the pressure of the processing space (S1). Claim 16 A substrate processing apparatus according to claim 11, characterized in that the pressure of the processing space (S1) is maintained lower than the pressure of the vaporization space (S2). Claim 17 A substrate processing apparatus according to claim 11, characterized by including a connecting pipe section (70) that connects an external storage tank (50) for storing the processing liquid and the atomizing section (100) to deliver the processing liquid. Claim 18 A substrate processing device according to claim 17, wherein the connecting pipe section (70) comprises a connecting pipe (71) connecting the storage tank (50) and the atomizing section (100), and a liquid control valve (72) installed in the connecting pipe (71) to control the supply flow rate of the processing liquid, and to maintain the connecting pipe (71) on the atomizing section (100) side in a vacuum state and the connecting pipe (71) on the storage tank (50) side in an atmospheric pressure state by blocking the connecting pipe (71).

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