Apparatus and method for inspecting multilayer film

KR103003559B1Active Publication Date: 2026-08-11WGS CO LTD
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Patent Information

Application Number
KR1020240072300
Authority / Receiving Office
KR · KR
Patent Type
Patents
Current Assignee / Owner
Filing Date
2024-06-03
Publication Date
2026-08-11
Estimated Expiration
2044-06-03

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Abstract

An apparatus and method for inspecting a multilayer film using photons generated from a photon generator are disclosed. The disclosed multilayer film inspection method comprises: a step in which a photon generator, which moves horizontally in a predetermined direction of movement on the surface of a multilayer film object protected by a metal layer and an insulating layer formed on top of the metal layer, irradiates photons toward the insulating layer within a predetermined irradiation angle range; and a step in which, when the photons collide with the metal layer exposed from the insulating layer and a photoelectric effect occurs, a signal analyzer measures a change in the signal generated by the photoelectric effect.
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Description

Technology Field

[0001] Various embodiments of the present disclosure relate to a multilayer film inspection apparatus and method, and more specifically, to a multilayer film inspection apparatus and method for detecting a defective state of a multilayer film. Background Technology

[0002] Recently, there has been an increasing demand for energy storage devices, energy generation devices, and display devices, and various types of multilayer films were laminated on substrates in these devices.

[0003] These substrates could experience performance degradation depending on temperature, and posed a risk of overheating and explosion, particularly when temperatures rose.

[0004] Furthermore, for example, various flammable materials are embedded inside energy storage devices, and the resulting heat generation or explosion can cause ignition or explosion of other external components, which could lead to casualties and property damage.

[0005] Furthermore, if the temperature of the energy storage device rises and the shape of components such as separators deforms, ignition or explosion could occur due to an internal short circuit between the anode and cathode.

[0006] For example, devices using multilayer films with exposed metal layers often resulted in even more dangerous situations.

[0007] Therefore, thorough inspection of components (multilayer films) used in energy storage devices, energy generation devices, and display devices is required. In particular, there is a need to be able to inspect multilayer films laminated on substrates quickly and easily, while also accurately detecting defects in metal layers that may cause danger. Prior art literature

[0008] Korean Published Patent Application No. 10-2020-0007292 (Publication Date: January 22, 2020) The problem to be solved

[0009] Various embodiments of the present disclosure aim to provide a multilayer film inspection apparatus and method for detecting a defective state of a multilayer film using photons.

[0010] In addition, various embodiments of the present disclosure have another objective of providing a multilayer film inspection apparatus and method for detecting a defective state of a multilayer film by utilizing a photoelectric effect and / or electrostatic phenomenon caused by photons. means of solving the problem

[0011] A multilayer film inspection method according to one embodiment for achieving the aforementioned purpose is a multilayer film inspection method using photons generated from a photon generator, comprising: a step of irradiating photons toward the insulating layer within a predetermined irradiation angle range using a photon generator that moves horizontally in a predetermined direction of movement on the surface of a multilayer film object protected by a metal layer and an insulating layer formed on top of the metal layer; and when the photons collide with the metal layer exposed from the insulating layer and a photoelectric effect occurs, a signal analyzer detects the photoelectric effect signal's It includes a step of measuring changes.

[0012] In one embodiment, the photon generator may have a structure integrated with a carbon nanotube (CNT) that generates the photon according to an externally applied current.

[0013] In one embodiment, the multilayer film inspection method may further include a step of detecting whether the metal layer on the multilayer film object is externally exposed when the change in the signal is measured to be greater than a certain magnitude.

[0014] In one embodiment, the multilayer film inspection method may further include the step of determining that external exposure of the metal layer has occurred in a certain range of the location where the photon generator irradiates photons when the change in the signal is measured to be greater than a certain magnitude.

[0015] In one embodiment, static electricity is generated between the insulating layer and the metal layer by photons irradiated for a preset time through the photon generator, and a signal resulting from the formation of an electric field may be generated in the metal layer exposed from the insulating layer due to the static electricity.

[0016] In one embodiment, it can be determined that external exposure of the metal layer has occurred at the point where a signal is generated due to the formation of the electric field.

[0017] In one embodiment, whether a signal is generated due to the formation of the electric field can be measured through a signal analyzer.

[0018] In one embodiment, the predetermined emission angle range may have an angle range of 110 to 150 degrees.

[0019] In one embodiment, after the inspection of the multilayer film object is completed, static electricity can be discharged using an antistatic brush.

[0020] In addition, a multilayer film inspection device according to one embodiment for achieving the aforementioned purpose comprises: a multilayer film object comprising a metal layer and an insulating layer formed on top of the metal layer; a photon generator that moves horizontally in a preset direction of movement on the surface of the multilayer film object and irradiates photons toward the insulating layer within a predetermined irradiation angle range; and a signal analyzer that detects whether the metal layer on the multilayer film object is externally exposed by measuring a change in a signal generated by the photoelectric effect when the photons collide with the metal layer exposed from the insulating layer and a photoelectric effect occurs. Effects of the invention

[0021] As described above, various embodiments of the present disclosure have the effect of improving the quality of the substrate by rapidly detecting the external exposure of the metal layer to a first specific region of the metal layer where photons are not extinguished by the photoelectric effect, thereby removing multilayer films with high defect rates in advance.

[0022] In addition, various embodiments of the present disclosure electrically measure the degree of electrostatic absorption or measure the amount of electrostatic charge to rapidly detect the external exposure of the metal layer to a second specific area exposed from a crack piece (scratch piece) of the insulating layer, thereby removing the multilayer film with a high defect rate in advance, which also has the effect of increasing the stability of the substrate.

[0023] In addition, various embodiments of the present disclosure have the effect of enhancing the stability of the substrate by using a brush device to neutralize static electricity accumulated in a certain form in the insulating layer and the metal layer through an electrical signal that differs from the static electricity signal measured in a second specific region from a crack piece (scratch piece) of the soft layer.

[0024] The effects of the above disclosure are not limited to those mentioned above, and other unmentioned effects will be clearly understood by a person skilled in the art from the description below. Brief explanation of the drawing

[0025] FIG. 1 is a schematic diagram illustrating the configuration of a multilayer film inspection device according to one embodiment of the present disclosure. FIG. 2 is a diagram illustrating an exemplary arrangement of a multilayer film inspection device for inspecting a multilayer film object according to one embodiment of the present disclosure. FIG. 3 is a diagram exemplarily showing the structure of a multilayer film object subject to inspection according to one embodiment of the present disclosure. FIG. 4 is a diagram illustrating an exemplary photon generator of a multilayer film inspection device according to one embodiment of the present disclosure. FIG. 5 is a diagram specifically illustrating the configuration of a signal analyzer for inspecting external exposure of a metal layer due to static electricity according to one embodiment of the present disclosure. FIG. 6 is a diagram exemplarily illustrating the state of an insulating layer and a metal layer provided in a multilayer film object according to one embodiment of the present disclosure, and the state of a first specific region and a second specific region of the metal layer. FIG. 7 is a diagram illustrating an exemplary brush device added to the configuration of a multilayer film inspection device according to one embodiment of the present disclosure. FIG. 8 is a diagram illustrating a signal analyzer for measuring the amount of static electricity according to one embodiment of the present disclosure to check whether the metal layer is exposed to the outside. FIG. 9 is a flowchart exemplarily illustrating a multilayer film inspection method according to one embodiment of the present disclosure. FIG. 10 is a flowchart specifically illustrating the measurement step and detection step of a multilayer film inspection method according to one embodiment of the present disclosure. FIG. 11 is a flowchart illustrating an exemplary method for neutralizing static electricity accumulated on a multilayer film object according to one embodiment of the present disclosure. Specific details for implementing the invention

[0026] The advantages and features of the present disclosure and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present disclosure is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to make the present disclosure complete and to fully inform those skilled in the art of the scope of the present disclosure, and the present disclosure is defined only by the scope of the claims.

[0027] The terms used in this specification are for describing embodiments and are not intended to limit the disclosure. In this specification, the singular form includes the plural form unless specifically stated otherwise in the text. The terms “comprises” and / or “comprising” as used in this specification do not exclude the presence or addition of one or more other components in addition to the components mentioned. Throughout the specification, the same reference numerals refer to the same components, and “and / or” includes each of the mentioned components and all combinations of one or more. Although terms such as “first,” “second,” etc., are used to describe various components, these components are not limited by these terms. These terms are used merely to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the technical scope of this disclosure.

[0028] Unless otherwise defined, all terms used herein (including technical and scientific terms) may be used in a meaning commonly understood by those skilled in the art to which this disclosure pertains. Additionally, terms defined in commonly used dictionaries are not to be interpreted ideally or excessively unless explicitly and specifically defined otherwise.

[0029] Throughout this disclosure, the same reference numerals denote the same components. This disclosure does not describe all elements of the embodiments, and general content in the art to which this disclosure pertains or content that overlaps between embodiments is omitted. As used in the specification, the terms “part” or “module” refer to hardware components such as software, FPGAs, or ASICs, and the “part” or “module” performs certain roles. However, the term “part” or “module” is not limited to software or hardware. The “part” or “module” may be configured to reside in an addressable storage medium or may be configured to run one or more processors. Accordingly, by example, the “part” or “module” includes components such as software components, object-oriented software components, class components, and task components, as well as processes, functions, attributes, procedures, subroutines, segments of program code, drivers, firmware, microcode, circuits, data, databases, data structures, tables, arrays, and variables. The functions provided within the components and "parts" or "modules" may be combined into a smaller number of components and "parts" or "modules," or further separated into additional components and "parts" or "modules."

[0030] Throughout the specification, when a part is described as being "connected" to another part, this includes not only cases where they are directly connected but also cases where they are indirectly connected, and indirect connections include connections made via a wireless communication network.

[0031] Furthermore, when it is stated that a part "includes" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.

[0032] Throughout the specification, when it is stated that one component is located "on" another component, this includes not only cases where one component is in contact with another component, but also cases where another component exists between the two components. Additionally, terms such as "first," "second," etc., are used to distinguish one component from another, and the components are not limited by the aforementioned terms. Singular expressions include plural expressions unless the context clearly indicates an exception.

[0033] In each step, identification codes are used for convenience of explanation and do not describe the order of the steps; the steps may be performed differently from the specified order unless a specific order is clearly indicated in the context.

[0034] Hereinafter, preferred embodiments of the present disclosure will be described in more detail with reference to the drawings.

[0035] FIG. 1 is a schematic diagram illustrating the configuration of a multilayer film inspection device according to one embodiment of the present disclosure, FIG. 2 is an exemplary diagram illustrating the actual arrangement of a multilayer film inspection device for inspecting a multilayer film object according to one embodiment of the present disclosure, FIG. 3 is an exemplary diagram illustrating the structure of a multilayer film object that is the subject of inspection according to one embodiment of the present disclosure, and FIG. 4 is an exemplary diagram illustrating a photon generator of a multilayer film inspection device according to one embodiment of the present disclosure.

[0036] As described above, a multilayer film inspection device (10) according to one embodiment includes a photon generator (100) and a signal analyzer (200), and the signal analyzer (200) may include a measuring instrument (210) and a detector (220).

[0037] In one embodiment, the photon generator (100) is a device for generating photons and can irradiate photons toward the insulating layer (320) of the multilayer film object (300) within a predetermined irradiation angle range (112) while moving horizontally in a predetermined direction above the surface of the multilayer film object (300) which is the object to be inspected.

[0038] Here, the multilayer film object (300) that is the subject of inspection may include a metal layer (310) and an insulating layer (320) as shown in FIG. 3, and the insulating layer (320) is an insulating sheet and serves to protect the metal layer (310) by preventing the metal layer (310) from being exposed to the outside.

[0039] However, the insulating layer (320) is not limited to the characteristics of such insulating layer (320) and may be formed on both sides or on top of the metal layer (310) for other purposes, and the configuration of the insulating layer (320) described above is merely an example.

[0040] At this time, the metal layer (310) is preferably an aluminum foil layer, but is not necessarily limited thereto.

[0041] On the other hand, the insulating layer (320) of the multilayer film object (300) may be a composite layer formed on one or both sides of the metal layer (310), such as in FIG. 3, which is a collective term for polypropylene (321), adhesive (322), corrosion-resistant layer (323), corrosion-resistant layer (324), adhesive (325), and nylon (326) layers, excluding the metal layer (310) made of aluminum foil.

[0042] Here, the polypropylene (321), adhesive (322), and anti-corrosion layer (323) mentioned are shown in FIG. 3 but not in FIG. 2. This is because, in this embodiment, an external inspection (metal layer exposure inspection) is substantially performed on the metal layer (204) among each layer of the multilayer film object (300) that is the object to be inspected.

[0043] In addition, a photon generator (100) according to one embodiment may have a structure integrated with a carbon nanotube (110, CNT) that generates photons according to an externally applied current, as shown in FIG. 2.

[0044] To this end, the photon generator (100) may include a carbon nanotube (110) as shown in FIG. 4 and a body part (120) formed integrally with the carbon nanotube (110) to substantially generate photons and irradiate them to the outside.

[0045] At this time, the carbon nanotube (110) can form a negative electrode, for example, according to the current applied from the outside, and the negative electrode can generate a large amount of electrons (-) by accelerating electrons (-) under vacuum conditions inside the carbon nanotube (110).

[0046] Accordingly, the body portion (120) of the photon generator (100) can emit a large amount of electrons (-) generated during photon irradiation toward the insulating layer (320) of the multilayer film target (300).

[0047] Meanwhile, the photon generator (100) according to one embodiment preferably irradiates photons onto the insulating layer (320) of the multilayer film target (300) within a predetermined irradiation angle range (112), for example, an angle range of 1 to 150 degrees or an angle range of 1 to 120 degrees or 1 to 140 degrees.

[0048] Thus, the reason for limiting the irradiation angle range (112) for irradiating photons of the photon generator (100) is to ultimately maximize the photoelectric effect and / or electrostatic effect necessary to detect whether the metal layer (310) is externally exposed as intended in the present disclosure.

[0049] In addition, in one embodiment, the photon generator (100) may be positioned above the multilayer film object (300) at a distance of approximately 1 to 550 mm and may be moved horizontally, and more specifically, it may be preferable to position it above the multilayer film object (300) at a distance of approximately 1 to 20 mm.

[0050] In this way, the reason for limiting the distance between the photon generator (100) and the multilayer film object (300) is also to maximize the photoelectric effect and / or electrostatic effect necessary to detect whether the metal layer (310) is exposed to the outside.

[0051] For example, when a photon generator (100) irradiates photons toward an insulating layer (320) of a multilayer film object (300) within the aforementioned distance range and irradiation angle range (112), the irradiated photons may collide with a first specific region of a metal layer (310) exposed from the insulating layer (320) to generate a photoelectric effect.

[0052] In this way, the photoelectric effect occurs when a photon emitted from the photon generator (100) collides with a first specific exposed area of ​​the metal layer (310), and as a result, a large amount of electrons (-) generated in the photon generator (100) can be emitted, and the emitted electrons (-) can create a potential difference with the first specific area (311) of the metal layer (310) exposed from the insulating layer (320) and / or the positive electrode (+) formed therein.

[0053] In one embodiment, the measuring device (210) of the signal analyzer (200) can be connected to the sides of the multilayer film object (300) by a probe, and, for example, as in FIG. 2, if connected to the unfolded side regions (313, 314) of the metal layer (310), the change in signal generated in each layer of the multilayer film object (300) can be measured.

[0054] At this time, the signal measured at each layer of the multilayer film object (300) may be any one of an electrical signal, a sound signal, and a wavelength signal, but in this embodiment, it will be described as an example limited to an electrical signal.

[0055] For example, the measuring instrument (210) of the signal analyzer (200) can measure the change in the first electrical signal generated by the photoelectric effect in the first specific area (311) when a photon irradiated from the photon generator (100) collides with the first specific area (311) of the metal layer (310) exposed from the insulating layer (320) and a photoelectric effect occurs.

[0056] At this time, the first specific region (311) refers to an exposed portion of the metal layer (310) corresponding to a location where a portion of the insulating layer (320) is not present, in cases where a portion of the insulating layer (320) formed on the upper part of the metal layer (310) exists due to various factors.

[0057] As such, the first specific region (311) exposed from the insulating layer (320) may exist in multiple numbers on a single multilayer film object (300), although not shown in FIG. 2. Since at least one of these first specific regions (311) is exposed from the insulating layer (320) and exists in a groove shape, photon collisions can be maximized, and a photoelectric effect phenomenon can occur.

[0058] Accordingly, the measuring instrument (210) according to one embodiment can measure a change in a first electrical signal transmitted by the photoelectric effect generated in the first specific area (311) when a photoelectric effect occurs in the first specific area (311) of the groove-shaped exposed metal layer (310) as described above.

[0059] In this case, the change in the first electrical signal being measured may refer to a signal having a potential difference generated by the photoelectric effect. In this case, the potential difference of the first electrical signal may correspond to a potential difference pre-set by experiment.

[0060] This potential difference of the first electrical signal is distinguished from the potential difference of the electrical signal measured in the absence of the photoelectric effect.

[0061] In addition, in one embodiment, the measuring instrument (210) can measure a change in a second electrical signal generated by a photon irradiated from the photoelectric generator (100) in an insulating layer (320) at a different location that does not correspond to at least one first specific region (311) formed in the metal layer (310).

[0062] For example, when a photon generated from a photoelectric generator (100) is irradiated onto an insulating layer (320) of a multilayer film object (300), even if the photon collides with the insulating layer (320), it may be reflected and extinguished. Therefore, unlike the photoelectric effect occurring in the first specific region (311), no photoelectric effect occurs in the insulating layer (320), and furthermore, there is no exchange between the electron (-) formed on the upper part of the insulating layer (320) and the positive ion (+) of the positive electrode formed in the metal layer (310) that is not exposed from the insulating layer (320).

[0063] Therefore, when the measuring instrument (210) measures a change in a second electrical signal caused by a photon on an insulating layer (320) at a different location that does not correspond to at least one first specific region (311) formed on the metal layer (310), it is forced to measure a change in a normal electrical signal having almost no potential difference or a negligible potential difference, unlike the first electrical signal.

[0064] Since there is no exchange of positive and negative ions between the insulating layer (320) and / or the metal layer (310), it is natural that this second electrical signal has a value of substantially zero or close to zero.

[0065] In this way, the second electrical signal being measured is not generated by the photoelectric effect, so there is little to no potential difference, and through this signal, it can be said that the first specific region does not exist in the metal layer (310) at the corresponding location at the location of the insulating layer (320).

[0066] As is commonly known, the potential difference referred to in such various ways naturally means the difference between voltages or the difference between currents.

[0067] In one embodiment, the detector (220) of the signal analyzer (200) can inspect whether the metal layer is exposed to the outside, particularly in the metal layer (310) of the multilayer film object (300), when inspecting defects of the multilayer film object (300) that occur in the multilayer film object (300) through photon irradiation.

[0068] More specifically, when the change in the electrical signal is measured to be greater than a certain magnitude, the detector (220) can determine that external exposure of the metal layer has occurred in a certain range area (hereinafter also referred to as the first specific area) of the location where the photon generator (100) irradiates photons.

[0069] To this end, a detector (220) according to one embodiment can detect external exposure of a metal layer on a multilayer film object (300) by comparing the potential difference between a first electrical signal and a second electrical signal measured by a measuring instrument (210).

[0070] For example, if the detector (220) according to one embodiment determines that the first electrical signal measured by the measuring instrument (210) has a different potential difference (different potential difference magnitude) than the second electrical signal of a normal level, it can determine that the first specific region (311) of the metal layer (310) exposed from the insulating layer (320) has been exposed outside the metal layer.

[0071] In contrast, if the detector (220) determines that the first electrical signal measured by the measuring instrument (210) is nearly identical to the second electrical signal of a normal level, it can determine that the outer edge of the metal layer is not exposed because the first specific region (311) does not exist in the metal layer (310).

[0072] Meanwhile, although not illustrated, the multilayer film inspection device (10) may further include a controller (not illustrated). The controller can control the horizontal movement of the photon generator (100) described above and the operation of the measuring device (210) and detector (220) of the signal analyzer (200).

[0073] FIG. 5 is a diagram specifically illustrating the configuration of a signal analyzer for inspecting external exposure of a metal layer due to static electricity according to one embodiment of the present disclosure, and FIG. 6 is a diagram exemplarily illustrating the state of an insulating layer and a metal layer provided in a multilayer film object according to one embodiment of the present disclosure, and the state of a first specific region and a second specific region of the metal layer.

[0074] At this time, Fig. 6 will be cited when explaining Fig. 5.

[0075] Referring to FIG. 5, a signal analyzer (200) according to one embodiment includes a measuring device (210) and a detector (220), the measuring device (210) includes an electrostatic measuring unit (211) and a spark measuring unit (212), and the detector (220) may include an electrostatic detection unit (221) and a spark detection unit (222).

[0076] Hereinafter, the configuration of the electrostatic measuring unit (211) and the spark measuring unit (212) of the measuring device (210) and the configuration of the electrostatic detecting unit (221) and the spark detecting unit (222) of the detector (220) will be described in detail without regard to order.

[0077] As a prerequisite before explaining this configuration, the photon generator (100) shown in FIGS. 1 and 2 continuously irradiates photons into the insulating layer (320) of the multilayer film object (300) within a predetermined irradiation angle range (112) for a predetermined time, and if a large amount of electrons (-) are emitted, static electricity may be generated between the insulating layer (320) and the metal layer (310) by the large amount of electrons (-).

[0078] The reason for this is that the insulating layer (320) is made of an insulating material that does not conduct current, so electrons (-) emitted from the photon generator (100) are not transferred to the metal layer (310) when the metal layer (310) is not normally exposed, but accumulate on the insulating layer (320), thereby generating static electricity between the insulating layer (320) and the metal layer (310).

[0079] In this case, the electrostatic measuring unit (211) according to one embodiment can measure the potential difference, which is a change in a third electrical signal caused by the generated electrostatic charge, when electrostatic charge is generated between the insulating layer (320) and the metal layer (310) by photons and / or electrons emitted from the photoelectric generator (100) for a predetermined time.

[0080] At this time, the potential difference of the third electrical signal naturally has a substantially very small value because there is no positive and negative ion exchange between the insulating layer (320) and / or the metal layer (310) due to static electricity.

[0081] In addition, the electrostatic measuring unit (211) according to one embodiment can measure the potential difference of a fourth electrical signal caused by absorbed electrostatic charge (301) when, for example, electrostatic charge generated on an insulating layer (320) is absorbed (301) in a second specific region (312) of a metal layer (310) exposed from a crack piece (scratch piece, 327) of the insulating layer (320), as shown in FIGS. 5 and 6.

[0082] At this time, the second specific region (312) means that most of it is hidden from the crack pieces (scratch pieces, 327) of the insulating layer (320) as in FIG. 6, but substantially part of it is exposed through the gap, and this may also have a groove shape.

[0083] However, since the groove shape here is very fine, it can practically mean a very fine space rather than a groove shape.

[0084] Accordingly, when static electricity generated on the insulating layer (320) is absorbed (301) into a second specific region (312) of the metal layer (310) exposed through a crack or scratch fragment (327) of the insulating layer (320), charge may be accumulated in the second specific region of the metal layer (310). When charge is accumulated in the second specific region of the inner layer (310), a potential difference may be generated between the second specific region (312) and the corresponding upper insulating layer (320, in the state of a fragment damaged by a crack or scratch, 327) due to the accumulated charge.

[0085] Accordingly, the electrostatic measuring unit (211) according to one embodiment may be able to measure the potential difference of the fourth electrical signal generated on the aforementioned second specific area (312).

[0086] In one embodiment, the electrostatic detector (221) can determine that if there is a difference between the potential difference of the third electrical signal measured by the electrostatic measuring unit (211) and the potential difference of the fourth electrical signal measured, the second specific area (312) at the location where the fourth electrical signal was generated has been exposed to the outside of the metal layer.

[0087] For example, since the third electrical signal is very small (microscopic) due to static electricity, the electrostatic detector (221) can confirm a significant difference by comparing this third electrical signal with a fourth electrical signal having a potential difference of a predetermined magnitude, and through confirming this potential difference, it can be determined that the second specific area (312) at the location where the fourth electrical signal was generated has been exposed to the outside of the metal layer.

[0088] It is obvious that the potential difference of the fourth electrical signal mentioned in this way is different from the potential difference of the first electrical signal due to the photoelectric effect explained earlier. The potential difference of the fourth electrical signal due to electrostatic absorption (301) is different from the potential difference of the first electrical signal due to the photoelectric effect.

[0089] In one embodiment, the spark measuring unit (212) generates static electricity between the insulating layer (320) and the metal layer (310) by photons irradiated for a preset time, and a signal (e.g., a spark signal) resulting from the formation of an electric field may be generated in the metal layer (310) exposed from the insulating layer (320) due to the static electricity. This implies that there is external exposure at the point where the signal resulting from the formation of the electric field is generated (hereinafter referred to as the second specific region).

[0090] More specifically, the spark measuring unit (212) can determine whether a signal (e.g., a spark signal) resulting from the formation of an electric field has occurred in the second specific region (312) of the metal layer (310) by comparing the potential difference of the third electrical signal measured by, for example, the electrostatic measuring unit (211) with the potential difference of the fourth electrical signal, if there is a difference.

[0091] For example, if the spark measuring unit (212) determines that a signal is generated due to the formation of an electric field, it can detect the fifth electrical signal that was measured, and if it determines that a signal is not generated due to the formation of an electric field, it can check the fourth electrical signal again.

[0092] At this time, a signal generated due to the electric field effect, for example, a fifth electrical signal, can be distinguished from the fourth electrical signal described earlier.

[0093] Meanwhile, whether a signal is generated due to the aforementioned electric field formation can be measured through a signal analyzer, for example, through an emission spectrophotometer (not shown). In other words, the signal analyzer (200) further includes an emission spectrophotometer, and through this emission spectrophotometer, the generation of a signal due to the electric field effect as described above can be measured.

[0094] For example, when a signal is generated due to the formation of an electric field, the spectrum of the emitted light can be analyzed using an emission spectrometer, and through spectrum analysis, the exposure status and location of the metal layer in a second specific region of the metal layer where the signal generated due to the formation of the electric field can be accurately identified.

[0095] Accordingly, the electrostatic detector (221) can receive a signal resulting from the formation of an electric field detected by the spark measuring unit (212), such as a fifth electrical signal of a spark phenomenon, and can determine that the second specific area (312) at the location where the received fifth electrical signal of the spark phenomenon occurred is exposed outside the metal layer.

[0096] At this time, the electrostatic detector (221) may determine the external exposure of the metal layer for a more accurate second specific area (312) by comparing the received fifth electrical signal with the previously acquired fourth electrical signal.

[0097] In addition, if it is determined that a signal is generated due to electric field formation in the second specific region (312) of the metal layer (310), additional vision inspection may be performed.

[0098] That is, when the electrostatic detection unit (221) determines that a signal is generated due to the formation of an electric field by the spark measurement unit (212), it can obtain captured image information by photographing a second specific area of ​​the metal layer (310) using an image sensor.

[0099] Thus, the electrostatic detector (221) according to one embodiment can determine that the second specific region (312) of the metal layer (310) has been exposed outside the metal layer by additionally identifying the difference in electric field phenomena through comparison between the acquired image information and other normal images, in addition to the analysis of the aforementioned fourth electrical signal or fifth electrical signal.

[0100] As a result, in this embodiment, the generation of a potential difference due to electrostatic absorption (301) in a second specific region (312) of the metal layer (310) that is covered by crack pieces (scratch pieces, 327) of the insulating layer (320) can be identified more accurately.

[0101] FIG. 7 is a diagram illustrating an exemplary brush device added to the configuration of a multilayer film inspection device according to one embodiment of the present disclosure.

[0102] Referring to FIG. 7, a multilayer film inspection device (10) according to one embodiment may further include a brush device (400) to neutralize (remove) static electricity generated on a multilayer film object (300), and the brush device (400) may include a static electricity neutralizing brush (410), a driving unit (420) for moving the static electricity neutralizing brush (410), and an operating unit (430) for operating the static electricity neutralizing brush (410) moved by the driving unit (420).

[0103] Looking further into these configurations, the driving unit (420) according to one embodiment can perform the function of moving horizontally with respect to the antistatic brush (410) while in contact with the multilayer film object (300) after the defect inspection of the multilayer film object (300) is completed, that is, after the horizontal movement of the photon generator (100) to perform defect inspection of the multilayer film object (300) on the multilayer film object is completed.

[0104] In one embodiment, the operating unit (430) can control the driving unit (410) to neutralize (remove) the static electricity accumulated in the insulating layer (320) when the potential difference of a third electrical signal having a predetermined small potential difference due to the accumulation of static electricity is greater than a preset potential difference. At this time, the preset potential difference may mean an appropriate level value of static electricity.

[0105] Thus, the operating unit (430) can control the driving unit (410) to move the static electricity removal brush (410) horizontally and remove static electricity formed on the upper part of the insulating layer (320) or static electricity formed between the insulating layer (320) and the metal layer (410).

[0106] In this way, by neutralizing the static electricity accumulated on the multilayer film object (300), the stability of the multilayer film object (300) can be further increased and the defect rate of the multilayer film object (300) can be lowered.

[0107] FIG. 8 is a diagram illustrating a signal analyzer for measuring the amount of static electricity according to one embodiment of the present disclosure to check whether a metal layer is exposed to the outside. In this case, FIG. 6 described above will be cited together when describing FIG. 8.

[0108] Referring to FIG. 8, a signal analyzer (200) according to one embodiment may include a first measuring instrument (230) and a first detector (240).

[0109] Before describing this configuration, as a prerequisite, the photon generator (100) shown in FIGS. 1 and 2 can continuously irradiate photons into the insulating layer (320) of the multilayer film object (300) within a predetermined irradiation angle range (112) for a predetermined time, and if a large amount of electrons (-) are emitted, static electricity can be generated between the insulating layer (320) and the metal layer (310) by the large amount of electrons (-).

[0110] The reason for this is that the insulating layer (320) is made of an insulating material that does not conduct current, so electrons (-) emitted from the photon generator (100) are not transferred to the metal layer (310) when the metal layer (310) is not normally exposed, but accumulate on the insulating layer (320), thereby generating static electricity between the insulating layer (320) and the metal layer (310).

[0111] In this case, the first measuring instrument (230) according to one embodiment can measure the amount of first static electricity generated between the insulating layer (320) and the metal layer (310) when static electricity is generated by photons continuously irradiated for a predetermined period of time.

[0112] In this way, the first measuring device (230) for measuring the amount of static electricity may be at least one of an electrostatic voltmeter, an electrostatic field meter, a quadrature voltmeter, and an electrostatic probe.

[0113] In addition, the first measuring instrument (230) can measure the amount of second static electricity absorbed (301) when the generated static electricity is absorbed (301) in a second specific area (312) of the metal layer (310) exposed from a crack piece (scratch piece, 327) of the insulating layer (320).

[0114] At this time, it is natural that the second amount of static electricity measured is smaller than the first amount of static electricity measured earlier. The reason for this is that the first amount of static electricity is measured on an undamaged insulating layer (320), whereas the second amount of static electricity is rapidly absorbed into the metal layer through cracks or scratch fragments (327) of the insulating layer (320), so it is bound to be smaller than the amount of static electricity present on the insulating layer.

[0115] Accordingly, the first detector (240) according to one embodiment can determine that if there is a difference between the first amount of static electricity measured by the first measuring instrument (230) and the second amount of static electricity, the second specific area (312) at the location where the second amount of static electricity was generated has been exposed to the outside of the metal layer.

[0116] For example, if the first detector (240) measures a first electrostatic amount of 10 μC (microcoulomb) and a second electrostatic amount of 2 μC (microcoulomb) by the first measuring instrument (230), and the first electrostatic amount is 10 μC and the second electrostatic amount is 2 μC, and the difference between these two electrostatic amounts is confirmed to be 8 μC, then through the difference of 8 μC, it can be determined that the second specific region (312) of the metal layer (310) has been exposed outside the metal layer.

[0117] At this time, a difference of 8μC may mean the degree to which the second specific region (312) of the metal layer (310) is exposed from cracks or scratch fragments (327) of the insulating layer (320).

[0118] Hereinafter, a multilayer film inspection method that can be performed through the aforementioned photon generator (100) and signal analyzer (200) will be described in detail.

[0119] FIG. 9 is a flowchart illustrating an exemplary method for inspecting a multilayer film according to one embodiment of the present disclosure. In this case, when describing FIG. 9, the drawings described above are referred to as supplementary references.

[0120] Referring to FIG. 9, a multilayer film inspection method according to one embodiment includes steps S110 to S130 to inspect a defect in a multilayer film object (300) using photons generated from a photon generator (100), such as whether a metal layer (310) laminated on the multilayer film object (300) is exposed.

[0121] In step S110, the photon generator (100) can move horizontally in a preset direction of movement on the surface of a multilayer film object (300) protected by a metal layer and an insulating layer formed on top of the metal layer, according to a command from a controller (not shown).

[0122] At this time, the photon generator (100) can irradiate photons toward the insulating layer (320) of the multilayer film object (300) within a predetermined irradiation angle range (112) during the horizontal movement process.

[0123] For example, it is preferable that the photon generator (100) irradiates photons onto the insulating layer (320) of the multilayer film object (300) within a predetermined irradiation angle range (112), for example, an angle range of 1 to 150 degrees or an angle range of 1 to 120 degrees or 1 to 140 degrees.

[0124] Thus, the reason for limiting the irradiation angle range (112) for irradiating photons of the photon generator (100) is to ultimately maximize the photoelectric effect and / or electrostatic effect necessary to detect whether the metal layer (310) is externally exposed as intended in the present disclosure.

[0125] In addition, in step S110, the photon generator (100) may be positioned above the multilayer film object (300) at a distance of approximately 1 to 550 mm and can move horizontally, for example, and more specifically, it may be preferable to position it above the multilayer film object (300) at a distance of approximately 1 to 20 mm.

[0126] In this way, the reason for limiting the distance between the photon generator (100) and the multilayer film object (300) is also to maximize the photoelectric effect and / or electrostatic effect necessary to detect whether the metal layer (310) is exposed to the outside.

[0127] For example, when a photon generator (100) irradiates photons toward an insulating layer (320) of a multilayer film object (300) within the aforementioned distance range and irradiation angle range (112), the irradiated photons may collide with a first specific region of a metal layer (310) exposed from the insulating layer (320) to generate a photoelectric effect.

[0128] In this way, the photoelectric effect occurs when a photon emitted from the photon generator (100) collides with a first specific exposed area of ​​the metal layer (310), and as a result, a large amount of electrons (-) generated in the photon generator (100) can be emitted, and the emitted electrons (-) can create a potential difference with the first specific area (311) of the metal layer (310) exposed from the insulating layer (320) and / or the positive electrode (+) formed therein.

[0129] In step S120, the signal analyzer (200) can measure the change in the signal generated by the photoelectric effect when a photon collides with a first specific region of the metal layer (310) exposed from the insulating layer (320) of the multilayer film object (300) and a photoelectric effect occurs.

[0130] At this time, the signal measured at each layer of the multilayer film object (300) may be any one of an electrical signal, a sound signal, and a wavelength signal, but in this embodiment, it will be described as an example limited to an electrical signal.

[0131] For example, in step S120, the signal analyzer (200) can measure a change in a first electrical signal generated by a photoelectric effect when a photon strikes a first specific region of the metal layer (310) exposed from the insulating layer (320) of the multilayer film object (300) and a photoelectric effect occurs, and can measure a change in a second electrical signal generated by a photon or / and an electron (-) at an insulating layer (320) at a different location that does not correspond to the measured first specific region.

[0132] To examine this in detail, the signal analyzer (200) can measure the change in the first electrical signal generated by the photoelectric effect in the first specific region (311) when a photon irradiated from the photon generator (100) collides with the first specific region (311) of the metal layer (310) exposed from the insulating layer (320) and a photoelectric effect occurs.

[0133] At this time, the first specific region (311) refers to an exposed portion of the metal layer (310) corresponding to a location where a portion of the insulating layer (320) is not present, in cases where a portion of the insulating layer (320) formed on the upper part of the metal layer (310) exists due to various factors.

[0134] As such, the first specific region (311) exposed from the insulating layer (320) may exist in multiple numbers on a single multilayer film object (300), although not shown in FIG. 2. Since at least one of these first specific regions (311) is exposed from the insulating layer (320) and exists in a groove shape, photon collisions can be maximized, and a photoelectric effect phenomenon can occur.

[0135] Accordingly, in step S120, the signal analyzer (200) can measure the change in the first electrical signal transmitted by the photoelectric effect generated in the first specific area (311) when a photoelectric effect occurs in the first specific area (311) of the exposed metal layer (310) in the shape of a groove.

[0136] In this case, the change in the first electrical signal being measured may refer to a signal having a potential difference generated by the photoelectric effect. In this case, the potential difference of the first electrical signal may correspond to a potential difference pre-set by experiment.

[0137] This potential difference of the first electrical signal is distinguished from the potential difference of the electrical signal measured in the absence of the photoelectric effect.

[0138] In addition, at step S120, the signal analyzer (200) can measure a change in the second electrical signal generated by photons irradiated from the photoelectric generator (100) in an insulating layer (320) at a different location that does not correspond to at least one first specific region (311) formed in the metal layer (310).

[0139] For example, when a photon generated from a photoelectric generator (100) is irradiated onto an insulating layer (320) of a multilayer film object (300), even if the photon collides with the insulating layer (320), it may be reflected and extinguished. Therefore, unlike the photoelectric effect occurring in the first specific region (311), no photoelectric effect occurs in the insulating layer (320), and furthermore, there is no exchange between the electron (-) formed on the upper part of the insulating layer (320) and the positive ion (+) of the positive electrode formed in the metal layer (310) that is not exposed from the insulating layer (320).

[0140] Therefore, when the signal analyzer (200) measures a second electrical signal by photons on an insulating layer (320) at a different location that does not correspond to at least one first specific region (311) formed on the metal layer (310), it is forced to measure a change in a normal electrical signal having almost no potential difference or a negligible potential difference, which is completely different from the change in the first electrical signal.

[0141] Since there is no exchange of positive and negative ions between the insulating layer (320) and / or the metal layer (310), it is natural that this second electrical signal has a value of substantially zero or close to zero.

[0142] In this way, the second electrical signal being measured is not generated by the photoelectric effect, so there is little to no potential difference, and through this signal, it can be said that the first specific region does not exist in the metal layer (310) at the corresponding location at the location of the insulating layer (320).

[0143] As is commonly known, the potential difference referred to in such various ways naturally means the difference between voltages or the difference between currents.

[0144] In step S130, a signal analyzer (200) according to one embodiment can detect whether the metal layer (310) on the multilayer film object (300) is externally exposed when a change in the electrical signal is measured to be greater than a certain magnitude.

[0145] For example, the signal analyzer (200) can detect the external exposure of the metal layer on the multilayer film object (300) by comparing the potential difference between the first electrical signal and the second electrical signal measured by step S120.

[0146] To examine this in detail, in step S130, the signal analyzer (200) can determine that external exposure of the metal layer has occurred in a certain range area (hereinafter also referred to as the first specific area) of the location where the photon generator (100) irradiates photons, when the change in the electrical signal is measured to be greater than a certain magnitude.

[0147] To this end, the signal analyzer (200) can detect the external exposure of the metal layer on the multilayer film object (300) by comparing the potential difference between the first electrical signal and the second electrical signal measured by step S120, for example.

[0148] For example, if the signal analyzer (200) determines that the first electrical signal measured by step S120 has a different potential difference (different potential difference magnitude) than the second electrical signal of a normal level, it can determine that the first specific region (311) of the metal layer (310) exposed from the insulating layer (320) has been exposed outside the metal layer.

[0149] In contrast, at step S130, if the signal analyzer (200) determines that the first electrical signal measured by step S120 is nearly identical to the second electrical signal of a normal level, it can determine that no outer periphery exposure of the metal layer has occurred because the first specific region (311) does not exist in the metal layer (310).

[0150] FIG. 10 is a flowchart specifically illustrating the measurement and detection steps of a multilayer film inspection method according to one embodiment of the present disclosure. In this case, when describing FIG. 10, the drawings described above are referred to as supplementary references.

[0151] Referring to FIG. 10, the measurement step (S120) of the multilayer film inspection method according to one embodiment includes steps S121 to S123 performed by a signal analyzer (200), and the detection step (S130) of the multilayer film inspection method may include steps S131 to S134. These steps will be described regardless of the order.

[0152] Here, as a prerequisite before describing each step, the photon generator (100) shown in FIGS. 1 and 2 continuously irradiates photons into the insulating layer (320) of the multilayer film object (300) within a predetermined irradiation angle range (112) for a predetermined time, and emits a large amount of electrons (-), so that static electricity may be generated in the insulating layer (320) and / or metal layer (310) by the large amount of electrons (-).

[0153] The reason for this is that the insulating layer (320) is made of an insulating material that does not conduct current, so electrons (-) emitted from the photon generator (100) are not transferred to the metal layer (310) when the metal layer (310) is not normally exposed, but accumulate on the insulating layer (320), thereby generating static electricity in the insulating layer (320) and / or the metal layer (310).

[0154] In step S121, the signal analyzer (200) can measure the potential difference of a third electrical signal caused by static electricity generated in the insulating layer (320) and / or metal layer (310) by photons or / and electrons emitted from the photoelectric generator (100) for a predetermined time.

[0155] At this time, the potential difference of the third electrical signal naturally has a substantially very small value because there is no positive and negative ion exchange between the insulating layer (320) and / or the metal layer (310) due to static electricity.

[0156] In step S122, the signal analyzer (200) can measure the potential difference of the fourth electrical signal caused by the absorbed static electricity (301) when, for example, static electricity generated on the insulating layer (320) is absorbed (301) in a second specific region (312) of the metal layer (310) exposed from a crack piece (scratch piece, 327) of the insulating layer (320).

[0157] At this time, the second specific region (312) means that most of it is hidden from the crack pieces (scratch pieces, 327) of the insulating layer (320) as in FIG. 6, but substantially part of it is exposed through the gap, and this may also have a groove shape.

[0158] However, since the groove shape here is very fine, it can practically mean a very fine space rather than a groove shape.

[0159] Accordingly, when static electricity generated on the insulating layer (320) is absorbed (301) into a second specific region (312) of the metal layer (310) exposed through a crack or scratch fragment (327) of the insulating layer (320), charge may be accumulated in the second specific region of the metal layer (310). When charge is accumulated in the second specific region of the inner layer (310), a potential difference may be generated between the second specific region (312) and the corresponding upper insulating layer (320, in the state of a fragment damaged by a crack or scratch, 327) due to the accumulated charge.

[0160] In step S131, the signal analyzer (200) can determine that if there is a difference between the potential difference of the third electrical signal measured by step S121 and the potential difference of the fourth electrical signal measured by step S122, the second specific area (312) at the location where the fourth electrical signal was generated has been exposed to the outside of the metal layer.

[0161] For example, since the third electrical signal caused by static electricity is very small (microscopic), the signal analyzer (200) can confirm a significant difference by comparing this third electrical signal with a fourth electrical signal having a potential difference of a predetermined magnitude, and through confirming this potential difference, it can determine that the second specific area (312) at the location where the fourth electrical signal was generated has been exposed to the outside of the metal layer.

[0162] It is obvious that the potential difference of the fourth electrical signal mentioned in this way is different from the potential difference of the first electrical signal due to the photoelectric effect explained earlier. The potential difference of the fourth electrical signal due to electrostatic absorption (301) is different from the potential difference of the first electrical signal due to the photoelectric effect.

[0163] In step S123, the signal analyzer (200) detects that static electricity is generated between the insulating layer (320) and the metal layer (310) by photons irradiated for a preset time, and that a signal (e.g., a spark signal) resulting from the formation of an electric field may be generated in the metal layer (310) exposed from the insulating layer (320) due to the static electricity. This implies that there is external exposure at the point where the signal (e.g., a spark signal) resulting from the formation of an electric field is generated (hereinafter referred to as the second specific region).

[0164] More specifically, for example, the signal analyzer (200) can further determine whether a signal resulting from the formation of an electric field in the second specific region (312) has occurred by comparing the potential difference of the third electrical signal measured by step S121 with the potential difference of the fourth electrical signal measured by step S122, if there is a difference.

[0165] For example, if the signal analyzer (200) determines that a signal is generated due to the formation of an electric field, it can detect a fifth electrical signal, such as a spark phenomenon, and if it determines that a signal is not generated due to the formation of an electric field, it can check the fourth electrical signal again.

[0166] At this time, the fifth electrical signal, such as a spark phenomenon resulting from the formation of an electric field, can be distinguished from the fourth electrical signal described earlier.

[0167] Meanwhile, whether a signal is generated due to the aforementioned electric field formation can be measured through a signal analyzer, but it can also be measured, for example, through an emission spectrometer (not shown). In other words, the signal analyzer (200) further includes an emission spectrometer, and the generation of a spark as described above can be measured through such an emission spectrometer.

[0168] For example, when a signal is generated due to the formation of an electric field, the spectrum of the emitted light can be analyzed using an emission spectrometer, and through spectrum analysis, the exposure status and location of the metal layer in a second specific region of the metal layer where the signal generated due to the formation of the electric field can be accurately identified.

[0169] Accordingly, in step S132, the signal analyzer (200) can receive a signal according to the electric field formation detected by step S123, such as a fifth electrical signal of a spark phenomenon, and can determine that a second specific area (312) at the location where the received fifth electrical signal of the spark phenomenon occurred is exposed outside the metal layer.

[0170] At this time, the signal analyzer (200) may determine the external exposure of the metal layer for a more accurate second specific area (312) by comparing the received fifth electrical signal with the previously acquired fourth electrical signal.

[0171] Furthermore, in this embodiment, if it is determined that a signal is generated due to the formation of an electric field in a second specific region (312) of the metal layer (310), additional vision inspection may be performed.

[0172] To this end, in step S133, if the signal analyzer (200) determines that a signal is generated due to the formation of an electric field by step S123, for example, by using an image sensor (not shown) to photograph a second specific area of ​​the metal layer (310), the captured image information can be obtained.

[0173] Thus, in step S134, the signal analyzer (200) can determine that the second specific region (312) of the metal layer (310) has been exposed outside the metal layer by additionally identifying the difference in the spark phenomenon through comparison between the acquired image information and other normal images, in addition to the analysis of the aforementioned fourth electrical signal and / or fifth electrical signal.

[0174] As a result, in this embodiment, the generation of a potential difference due to electrostatic absorption (301) in a second specific region (312) of the metal layer (310) that is covered by crack pieces (scratch pieces, 327) of the insulating layer (320) can be identified more accurately.

[0175] As such, although a specific example of the measurement step (S120) and detection step (S130) has been described in this embodiment, detection of external exposure of the metal layer through electrostatic amount measurement may also be performed differently.

[0176] That is, although not illustrated in FIG. 10, in the measurement step (S120), the signal analyzer (200) can measure a first amount of static electricity for the generated static electricity when static electricity is generated on the insulating layer (320) and / or the metal layer (310) by photons continuously irradiated for a preset predetermined time.

[0177] At this time, the signal analyzer (200) for measuring the amount of static electricity may further include at least one of an electrostatic voltmeter, an electrostatic field meter, a quadrature voltmeter, and an electrostatic probe for measuring the amount of static electricity.

[0178] In addition, in the measurement step (S120), the signal analyzer (200) can measure the amount of second static electricity for the absorbed static electricity (301) when the generated static electricity is absorbed (301) in a second specific area (312) of the metal layer (310) exposed from a crack piece (scratch piece, 327) of the insulating layer (320).

[0179] At this time, it is natural that the second amount of static electricity measured is smaller than the first amount of static electricity measured earlier. The reason for this is that the first amount of static electricity is measured on an undamaged insulating layer (320), whereas the second amount of static electricity is rapidly absorbed into the metal layer through cracks or scratch fragments (327) of the insulating layer (320), so it is bound to be smaller than the amount of static electricity present on the insulating layer.

[0180] Accordingly, in the detection step (S130), the signal analyzer (200) can determine that if there is a difference between the first electrostatic amount and the second electrostatic amount measured by the previous measurement step (S120), the second specific area (312) at the location where the second electrostatic amount was generated has been exposed to the outside of the metal layer.

[0181] For example, if the signal analyzer (200) detects that the difference between the two electrostatic amounts is 8μC when the measured first electrostatic amount is 10μC and the first electrostatic amount is 2μC, it can determine through the difference of 8μC that the second specific region (312) of the metal layer (310) has been exposed outside the metal layer.

[0182] At this time, a difference of 8μC may mean the degree to which the second specific region (312) of the metal layer (310) is exposed from cracks or scratch fragments (327) of the insulating layer (320).

[0183] In this way, in this embodiment, the state of external exposure of the metal layer to the second specific region (312) of the metal layer (310) can be easily detected even by measuring the amount of static electricity.

[0184] FIG. 11 is a flowchart illustrating an exemplary method for neutralizing static electricity accumulated on a multilayer film object according to one embodiment of the present disclosure.

[0185] Referring to FIG. 11, a method according to one embodiment may include steps S210 to S230 to neutralize static electricity accumulated on a multilayer film object (300) using a brush device (400). At this time, when describing FIG. 11, the configuration illustrated in FIG. 7 described above will be cited together.

[0186] In step S210, the driving unit (420) can move horizontally with respect to the antistatic brush (410) while in contact with the multilayer film object (300) after the defect inspection of the multilayer film object (300) is finished, that is, after the horizontal movement of the photon generator (100) to perform defect inspection of the multilayer film object (300) on the multilayer film object is finished.

[0187] In step S220, if the operating part (430) of the brush device (400) determines that the potential difference of a third electrical signal having a predetermined small potential difference due to accumulated static electricity is greater than a preset potential difference, the static electricity formed on the upper part of the insulating layer (320) or the static electricity formed between the insulating layer (320) and the metal layer (410) can be neutralized during the process of horizontal movement of the static electricity removal brush (410).

[0188] However, in step S230, if the operating unit (430) determines that the potential difference of the third electrical signal, which has a predetermined small potential difference due to accumulated static electricity, is smaller than the preset potential difference, the driving unit (410) is not operated.

[0189] In this way, in the present embodiment, by neutralizing the static electricity accumulated on the multilayer film object (300), the stability of the multilayer film object (300) can be further increased and the defect rate of the multilayer film object (300) can be lowered.

[0190] Although the present disclosure has been described above with reference to specific details, such as specific components according to various embodiments of the disclosure, and is limited to specific examples and drawings, this is provided merely to aid in a more comprehensive understanding and is not limited to various embodiments. It is obvious that those skilled in the art can make various modifications and variations from such machines.

[0191] Accordingly, the concept described in this invention should not be limited to the embodiments described above, and all modifications equivalent to or equivalent to the claims set forth below, as well as the claims set forth below, shall be considered to fall within the scope of the concept of this invention. Explanation of the symbols

[0192] 10: Multilayer film inspection device 100: Photon generator 200: Signal Analyzer 210: Measuring instrument 220: Detector 211: Electrostatic measuring unit 212: Spark measuring unit 221: Electrostatic detector 222: Spark detection unit 300: Multilayer film object 310: Metal layer 320: Insulating layer 400: Brush device

Claims

Claim 1 A method for inspecting a multilayer film using photons generated from a photon generator, comprising: a step in which a photon generator, which moves horizontally in a predetermined direction of movement on the surface of a multilayer film object protected by a metal layer and an insulating layer formed on top of the metal layer, irradiates photons toward the insulating layer within a predetermined irradiation angle range; a step in which, when the photons collide with the metal layer exposed from the insulating layer and a photoelectric effect occurs, a signal analyzer measures a change in the signal generated by the photoelectric effect; and a step in which, when the change in the signal is measured to be greater than a certain magnitude, external exposure of the metal layer occurs in a certain range of the location where the photon generator irradiates photons, wherein static electricity is generated between the insulating layer and the metal layer by photons irradiated through the photon generator for a predetermined time, and a signal is generated in the metal layer exposed from the insulating layer due to the formation of an electric field caused by the static electricity. Claim 2 A multilayer film inspection method according to claim 1, wherein the photon generator has a structure integrated with a carbon nanotube (CNT) that generates the photon according to an externally applied current. Claim 3 delete Claim 4 delete Claim 5 delete Claim 6 A multilayer film inspection method according to claim 1, characterized by determining that external exposure of the metal layer has occurred at the point where a signal is generated due to the formation of the electric field. Claim 7 A multilayer film inspection method according to claim 1, characterized in that the generation of a signal due to the formation of the electric field is measured through a signal analyzer. Claim 8 A multilayer film inspection method according to claim 1, characterized in that the predetermined emission angle range has an angle range of 1 to 150 degrees. Claim 9 A multilayer film inspection method according to claim 1, characterized by discharging static electricity with an antistatic brush after the inspection of the multilayer film object is completed. Claim 10 A multilayer film inspection device comprising: a metal layer and an insulating layer formed on top of the metal layer; a photon generator that moves horizontally in a preset direction of movement on the surface of the multilayer film object and irradiates photons toward the insulating layer within a preset irradiation angle range; and a signal analyzer that, when a photon collides with the metal layer exposed from the insulating layer and a photoelectric effect occurs, measures a change in a signal generated by the photoelectric effect, and when the change in the signal is measured to be greater than a certain magnitude, determines that external exposure of the metal layer has occurred in a preset range of the position where the photon generator irradiates photons, wherein static electricity is generated between the insulating layer and the metal layer by photons irradiated through the photon generator for a preset time, and a signal is generated due to the formation of an electric field in the metal layer exposed from the insulating layer due to the static electricity.

Citation Information

Patent Citations

  • Apparatus for evaluating semiconductor

    JP1997162253A

  • Method and detector for detecting defect of multi- layered film

    JP2003075387A

  • Method and apparatus for preparing a test system and electrical components to be tested.

    JP2010526314A

  • Single photon source

    JP7489114B2