Integration of sensor technology into coating tracks

Abstract

A method for processing multiple substrates comprises the steps of: loading the substrates onto a coating track; moving the substrates into a module of the coating track; performing a process for changing a film formed on the substrates; and, in a controller, acquiring photosensor data from a photosensor. The photosensor data includes measurements of the characteristics of the film. The method comprises the steps of determining a drying metric based on the characteristics of the film, and adjusting process parameters of the process based on the determined drying metric.

Description

Technology Field

[0001] Cross-reference regarding related patents and applications

[0002] This application claims priority and benefit to the filing date of U.S. Regular Patent Application No. 17 / 183,138, filed February 23, 2021, the entirety of which is incorporated herein by reference.

[0003] The present invention generally relates to a method for film deposition, and in a specific embodiment, to the integration of sensor technology into a coating track. Background Technology

[0004] Various films are deposited by suspending a film matrix in a solvent, coating the film matrix solution onto a substrate, and then heating the substrate to remove the solvent while leaving the film coating.

[0005] The most widely used method for coating a film solution onto a semiconductor substrate is spin-coat deposition on a wafer within a coating track. A puddle of the film substrate solution is distributed onto the center of the wafer. Then, the wafer is rotated at a series of RPMs to coat the wafer with a film coating of uniform thickness.

[0006] After the film coating is spin-coated onto a substrate, it is typically heat-treated in a post-apply bake module (PAB) to remove / remove solvents and induce chemical reactions, thereby altering film properties such as raising the glass transition temperature.

[0007] Special coating tracks are used to coat wafers with photosensitive films for photolithography. The coating tracks include a post-exposure bake (PEB) module, a post-exposure bake module (PEB), and sometimes a post-development bake module (hard bake module), along with a post-application bake (PAB) module.

[0008] A wafer is processed by a directed self-assembly (DSA) process using a special coating track equipped with a solvent annealing baker.

[0009] A method for processing a plurality of substrates comprises the steps of: loading the substrates onto a coating track; moving the substrates into a module of the coating track; performing a process for changing a film formed on the substrates; and, in a controller, acquiring photosensor data from a photosensor. The photosensor data includes measurements of the characteristics of the film. The method comprises the steps of determining a drying metric based on the characteristics of the film, and adjusting process parameters of the process based on the determined drying metric.

[0010] A method for processing multiple wafers comprises: loading a substrate into a module having a volatile organic compound (VOC) sensor; processing the substrate in the module to change a film formed on the substrate; acquiring VOC sensor data from the VOC sensor during the processing step; and adjusting process parameters of the processing step in a controller based on the VOC sensor data.

[0011] A method for processing a plurality of wafers includes the step of loading a substrate into a module having an edge bead sensor; and the step of processing the substrate in the module to change a film formed on the substrate. The film includes edge beads at the edges of the substrate. The method further includes the step of acquiring edge bead sensor data from the edge bead sensor during the processing step; and the step of adjusting process parameters of the processing step in a controller based on the edge bead sensor data. Brief explanation of the drawing

[0012] Now, for a more complete understanding of the present invention and its advantages, refer to the following description in conjunction with the accompanying drawings, and as the accompanying drawings: FIG. 1 illustrates a block diagram showing the main components of a coating track of a manufacturing facility according to one embodiment of the present invention; FIG. 2 illustrates a block diagram showing the main components of a coating track for coating a photoresist according to one embodiment of the present invention; FIG. 3 is a cross-sectional view of a spin coating module of a coating track shown in FIG. 1 and FIG. 2 according to an embodiment of the present invention; FIG. 4 illustrates a graph of the rotational speed of a spin chuck over time according to an embodiment of the present invention; FIG. 5 illustrates a graph of photosensor data over time regarding the intensity of light reflected from a film coating on a wafer, according to one embodiment of the present invention; FIG. 6 illustrates a flowchart illustrating a method of using an in-situ sensor to monitor and control a coating track process according to an embodiment of the present invention; FIGS. 7a to 7c illustrate cross-sectional views illustrating the removal of edge beads of a film from the edge of a wafer according to an embodiment of the present invention; FIG. 8 illustrates a cross-sectional view of a heat treatment module of a coating track shown in FIG. 1 and FIG. 2 according to an embodiment of the present invention; FIG. 9 illustrates a graph of wafer temperature versus time with an FDC segment added, according to an embodiment of the present invention; FIG. 10 illustrates a graph of data versus time from a volatile organic compound (VOC) sensor with an added FDC segment, according to an embodiment of the present invention; FIG. 11 illustrates a flowchart illustrating a method of an embodiment using an FDC through a field sensor to monitor and control the process of a coating track according to an embodiment of the present invention; FIGS. 12a to 12e illustrate cross-sectional views of major process steps when forming a pre-pattern as well as a directional self-assembly (DSA) sub-lithographic pattern according to an embodiment of the present invention; and FIGS. 13a to 13h illustrate cross-sectional views of major process steps when forming a chemical epitaxial self-assembled (DSA) sublithography pattern according to one embodiment of the present invention. Specific details for implementing the invention

[0013] Various embodiments provide a method for controlling film processes within a coating track. The film process control technology described in this application is applicable to film processes of multiple different film materials on multiple different substrates. The film process control technology described in this application is applicable to spin coating films, removal of edge beads of films from the edges of wafers, and post-application heat treatment (PAB) of films within a coating track equipment. In the case of photoresist films, the method of the embodiment includes, in addition to PAB, post-exposure heat treatment (PEB) and post-development heat treatment (PDB) or hard heat treatment. In the case of directional self-assembly processes, the method of the embodiment includes solvent annealing heat treatment. The provided embodiments are compatible with and complementary to defect detection and control (FDC) systems and advanced process control systems (APC).

[0014] A schematic diagram of the upper level of a coating track system using an embodiment of the present application will first be described using FIGS. 1 and 2. Next, a coating module implementing an embodiment of the present application will be described using FIGS. 3 together with the flowchart of FIGS. 6. Additional embodiments of the process will be described using FIGS. 11. Next, a heat treatment module implementing an embodiment of the present application will be described using FIGS. 8 together with the flowchart of FIGS. 6 and optionally FIGS. 11.

[0015] FIG. 1 illustrates a block diagram of a coating track system (100) for film coating. A coating module (104) distributes a film solution onto a substrate and rotates it at a series of rotations per minute (rpm) to first cover the substrate with a film solution of uniform thickness, and then removes excess film solution until a film coating having a target thickness and uniformity is achieved. Then, the coating track system (100) proceeds the substrate to a post-coating heat treatment (PAB) module (106), where the film coating is heat-treated to remove excess solvent. In some methods, after the solvent concentration is reduced to an acceptable level, a higher temperature can be used to initiate a chemical crosslinking reaction, thereby improving the chemical and thermal stability of the film coating.

[0016] The controller (102) receives status data of the coating module (104), such as temperature, pumping speed, distribution nozzle position, and spin chuck rpm, and also receives data from a coating sensor that monitors various characteristics of the film as the film is coated.

[0017] Additionally, the controller (102) receives post-coating heat treatment (PAB) module (106) status data such as temperature, pressure, exhaust gas flow rate, and substrate area temperature data, and also receives data from a heat treatment sensor that monitors various characteristics of the surroundings and various characteristics of the film as the film is heat-treated.

[0018] The controller can compare sensor data to control chart limits, adjust the process in real time, provide feedback commands for future wafers, and provide feedforward commands for the current module process or subsequent process steps of the future process.

[0019] In addition, the controller can convert sensor data into film parameters such as film thickness, solvent content, and refractive index, and by comparing these parameters, it can control chart limits, adjust the process, or terminate the current process step or the current process.

[0020] The controller (102) is compatible with and can be connected to an Advanced Process Control (APC) system (107) and a Fault Detection and Classification (FDC) system (109). The APC system (107) and the FDC system (109) can be integrated into a combined APC / FDC system (108). The controller (102) can provide data to the APC / FDC system (108) and can receive processed data and commands from the APC / FDC system (108). The APC / FDC system (108) can collect large amounts of process, instrumentation, and sensor data from multiple tools across the manufacturing line; and can perform sophisticated statistical analysis to identify statistically significant correlations between sensor data from the controller (102) and data from other manufacturing equipment and processes. The APC / FDC system (108) can generate a sophisticated model including data provided by the controller (102) and can optimize electrical device performance by adjusting process parameters across multiple manufacturing modules and equipment. For example, the APC / FDC system (108) can identify a correlation between dielectric film stress and transistor performance and transmit feedback information to the controller (102) to adjust the dielectric film coating process by changing the stress to improve transistor performance.

[0021] The FDC system (109) can compare the results of the FDC analysis with specifications or known appropriate historical data (golden data), and if a process defect is identified, it can set an FDC defect flag. The FDC system (109) can communicate the defect and supporting data to the APC system (107). The APC system (107) can transmit the processed data and commands to the controller (102). The controller (102) adjusts the process of the coating track system (100) to correct the defect. Additionally, the controller (102) can take measures to prevent defects from occurring on the wafer in the future and can take measures for subsequent processes to correct the defect so that the film is closer to the center of the specifications.

[0022] FIG. 2 illustrates a block diagram of a coating track system (200) for coating a photoactive film, such as a photoresist. After the photoresist is applied to a substrate in a coating module (104), it is processed through a number of additional process steps in a number of modules, such as an exposure module (110) for printing a pattern on the resist, and a development module (114) for washing the exposed resist to leave a residual photoresist film pattern geometry. After each process step, the photoresist may be heat-treated. After coating, post-coating heat treatment (PAB) may be performed in a PAB module (106) to remove excess solvent. After exposure in the exposure module (110), post-exposure heat treatment (PEB) may be performed in a PEB module (112) to induce a chemical reaction in the chemically amplified photoresist. In some manufacturing processes, after development in the development module (114), a post-development heat treatment or hard heat treatment is performed to crosslink the resist so that it can withstand higher process temperatures. During the directional self-assembly process, a solvent annealing heat treatment is performed in a solvent annealing heat treatment machine to separate the block copolymer into repeating patterns.

[0023] The controller (102) receives data from sensors monitoring equipment, such as spin chuck rpm and valve or mass flow controller position, and also receives data from sensors monitoring the process, such as optical sensors, volatile organic compound (VOC) concentration, exhaust gas flow rate, temperature, and pressure. The controller (102) can compare sensor data with control chart specifications or known appropriate historical data ranges (best ranges), adjust the process in real time, provide feedback commands for future wafers, and provide feedforward commands for future processes.

[0024] The controller (102) can be connected to an Advanced Process Control (APC) system (107) and a Fault Detection and Classification (FDC) system (109). The APC system (107) and the FDC system (109) can be integrated into an APC / FDC system (108). The controller (102) can provide data to the APC / FDC system (108) and can receive processed data, commands, as well as other feedback information from the APC / FDC system (108). For example, the APC / FDC system (108) can determine the correlation between the line edge roughness (LER) of the photoresist geometry and the PEB step temperature or heat treatment duration. The APC / FDC system (108) can provide feedback information to the controller (102) to adjust the PEB method to reduce the LER.

[0025] FIG. 3 is a cross-sectional view of a coating module (104). A substrate (124) is held in place on a spin chuck (122) by vacuum or electrostatic force. A mass flow controller (128) controls the flow of a film solution through a tube (130) to a distribution nozzle (126). The distribution nozzle (126) distributes the film solution onto the substrate (124) as the spin chuck (122) rotates. As the substrate (124) rotates, the film solution spreads uniformly across the substrate (124). Excess film solution is removed from the edge of the substrate (124) and collected by a film solution cup (134). A uniform coating of film (201) is formed across the surface of the substrate (124).

[0026] Sensors such as a light sensor (144) and a volatile organic compound (VOC) sensor (146) can be mounted on the ceiling of the coating chamber (120) and on the support arm (148) of the dispensing nozzle (126) so that the film (201) can be monitored throughout the coating process. The light sensor (144) can be directed to various positions across the surface of the substrate (124), including the outer edge of the substrate (124) where the edge bead can be removed. Light from the laser can be projected into the coating module (104) from one side of the coating chamber (120) and can be redirected at a perpendicular angle of incidence onto the surface of the film (201) on the substrate (124). The reflected light can be collected on the opposite side of the coating module (104) or reflected again through the film (201) from another mirror. The optical sensor (144) may be a camera, a spectrometer, and / or a laser-based transceiver. The VOC sensor (146) may be a small form factor gas sensor, such as, for example, the ADA Fruit MiCS554 sensor.

[0027] The controller (102) can correlate a changing interference pattern (Fig. 5) from a photosensor (144) in the coating module (104) with the changing thickness of the film (201). The controller (102) can use this data to adjust the spin speed of the spin chuck (122), thereby controlling the changing thickness of the film (201) or stopping the spin chuck (122) when a target thickness for the film (201) is reached.

[0028] The concentration of volatile organic compounds in the coating module (104) changes throughout the coating process. The controller (102) can adjust the spin speed of the spin chuck (122) using VOC data from the VOC sensor (146), so that the changing concentration of volatile organic compounds in the coating module (104) can be controlled, or the spin chuck (122) can be stopped when a target VOC concentration is reached.

[0029] The controller (102) can be connected to 152 and can receive data from the membrane monitoring sensors, namely the light sensor(s) (144) and the VOC sensor (146). Additionally, the controller (102) can be connected to various components of the coating module (104), such as the mass flow controller (128), the edge bead washing mass flow controller (138), the spin chuck (122) motor (132), and the exhaust gas valve (150), to receive data regarding the status of the various components of the coating module (104). In addition to receiving data regarding the status of various equipment components, the controller (102) can perform adjustments such as turning on and off the pump, adjusting the distribution speed by adjusting the mass flow controllers (128 and 138), adjusting the position of the distribution nozzle (126), changing the rpm of the spin chuck (122) by adjusting the motor (132), and adjusting the position of the exhaust gas valve (150). Additionally, the controller (102) can be connected to an integrated advanced process control / fault detection and classification system (APC / FDC) (108).

[0030] Process control using data from the optical sensor (144) in the coating module (104) of the coating track system (200) is illustrated in the graphs of FIGS. 4 and FIGS. 5. Process control of the coating module (104) by the controller (102) using data collected from sensors such as the optical sensor (144) and VOC sensor (146) of the coating chamber (120) is illustrated in the flowchart of FIG. 6.

[0031] FIG. 4 illustrates a graph of rotational speed (rpm) versus time of the spin chuck (122) in a film coating method. FIG. 4 will be described together with the coating module (104) of FIG. 3.

[0032] In step (154) of FIG. 4, while the spin chuck (122) rotates at a slow spin speed, puddles of film solution are distributed over the center of the substrate (124). Then, the rotational rpm of the substrate (124) is increased in step (156) and maintained at the increased rpm to uniformly spread the puddles over the entire substrate (124). Once a uniform coating of the film solution is achieved, in step (158), the rotational speed of the spin chuck (122) is increased in a precisely controlled manner to reduce the thickness of the film (201) by removing excess film solution from the edges of the substrate (124) and into the film solution cup (134). In step (160), a higher rpm speed is maintained until a specified film (201) thickness is reached. When the desired thickness is reached, the rpm of the spin chuck (122) is reduced in step (162) and then maintained at a lower rpm in step (164) while the excess solvent evaporates. A photosensor (144) may be used to measure the thickness of the film (201) and the solvent content of the film (201) throughout the spin coating process. A VOC sensor (146) may be used to measure the concentration of the solvent within the coating module (104) as it changes throughout the spin coating process. The change in solvent concentration may be correlated with characteristics of the film (201), such as solvent content, and may be correlated with changes in process steps, such as changes in spin speed.

[0033] FIG. 5 is exemplary sensor data from a laser-based transceiver optical sensor (144). As the thickness of the film (201) decreases, light reflected from the lower surface of the film (201) selectively interferes with light reflected from the upper surface of the film (201) both constitutively and destructively. The resulting interference pattern versus time of grayscale intensity alternating through maximum and minimum is illustrated in FIG. 5. The controller (102) can correlate the time interval between the peak (172) or the peak center (174) with the thickness of the film (201) and the rate at which the thickness of the film (201) changes. As the decrease in the thickness of the film (201) slows down, the interval between the peak (172) and the peak center (174) increases. The grayscale intensity of the interference pattern can change when the spin speed of the spin chuck (122) changes. Accordingly, when the rpm of the spin chuck (122) is changed, it may cause a shift in the interference pattern along the vertical y-axis. (In FIG. 5, the interference pattern of group 5A is compared with group 5B.)

[0034] The controller (102) can correlate the change in refractive index with the solvent content of the membrane (201), and in this way, can set the membrane drying metric.

[0035] FIG. 6 illustrates an embodiment of controlling a process within a coating track system (100 and 200) as described in FIG. 1 and 2 using sensor data according to an embodiment of the present application. A controller (102) may collect sensor data from a photosensor (144), from a volatile organic compound (VOC) sensor (146), or from both the photosensor (144) and the VOC sensor (146), as well as from other sensors. Note that in one embodiment, the photosensor (144) may be used separately from the VOC sensor (146), whereas in another embodiment, the photosensor (144) and the VOC sensor (146) may be used together. The controller (102) may use the photosensor (144) data to determine the rate at which the thickness of the film (201) changes and the rate at which the solvent content of the film (201) changes during the spin coating process. During the coating process, the rate at which the solvent evaporates from the film (201) can be determined from the VOC sensor (146) data. During the spin coating process, the solvent content of the film (201) can be correlated with the VOC sensor (146) data and can also be correlated with the optical sensor (144) data.

[0036] Now, referring to FIG. 6, during each step of the spin coating process, the film (201) on the substrate (124) within the coating module (104) is monitored (step (180) of FIG. 6).

[0037] Data from the laser-based transceiver optical sensor (144) is shown in FIG. 5. The controller converts the optical sensor (144) data into film (201) characteristics such as thickness and solvent content (step (182) in FIG. 6).

[0038] The controller (102) can receive data from a plurality of spaced-apart optical sensors (144) on the substrate (124) and can convert the data into film uniformity characteristics across the substrate, such as film thickness, refractive index, and solvent content. The controller (102) can compare this data with known appropriate data (best data) or control charts stored in the past (step (184) of FIG. 6) and can perform various operations according to a step determining whether the film (201) characteristics or film (201) uniformity are within specifications or outside specifications (step (186) of FIG. 6). In response to a step determining that the film (201) characteristics are within specifications, no action is taken (step (188) of FIG. 6). In response to a step determining that the film (201) characteristics have reached target specifications, the controller (102) can terminate the process or proceed the process to the next process step (step (190) of FIG. 6). The next step may be the next step of the coating process, such as changing the spin speed, or a change in the method of a subsequent process procedure, such as post-coating heat treatment (PAB).

[0039] In response to a step in which it is determined that the characteristics of the film (201) are in a warning state or out of specification, the process can be adjusted in real time to bring the thickness of the film (201) closer to the center of the specification (step (192) of FIG. 6). For example, within the coating module (104), the controller (102) can adjust the position of the dispensing nozzle (126), the film dispensing speed, the film coating spin speed, the coating speed ramp rate, the duration of the film coating step, the film coating cast time, ambient conditions, and exhaust gas conditions. Additionally, the controller (102) can perform feedback adjustments to the film dispensing method before coating the next substrate (124) (step (194) of FIG. 6), and can perform feedforward adjustments to the future heat treatment method or the edge bead cleaning process step of the current coating procedure before the current substrate (124) is transferred into the post-coating heat treatment (PAB) module (106) (step (196) of FIG. 6).

[0040] The optical sensor (144) can detect defect conditions, such as bubbles, during dispensing. Bubbles during dispensing on the substrate (124) can significantly alter the flow of the coating film as the wafer rotates. Since bubbles cause a significant deviation from the typical signal, they result in discontinuous signal jumps in the interference pattern or a large increase in signal noise. Dispensing bubbles cause a significantly non-uniform coating. If the APC / FDC system (108) or controller (102) identifies such a substrate (124), the coating process is terminated, and the substrate (124) is transferred and reworked.

[0041] After the film (201) is uniformly coated on the substrate (124), the outer millimeters of the edge of the substrate (124) are removed (edge ​​bead cleaning (EBR)), thereby preventing the wafer from rubbing against the slot of the wafer carrier or wafer handling equipment and generating particles that could reduce the process yield.

[0042] FIG. 7a illustrates a cross-sectional view of a substrate (124) after applying a film (201). The film (201) covers the surface of the substrate (124) and extends to the edge of the substrate (124).

[0043] As illustrated in FIG. 7b, the EBR dispensing nozzle (136) directs the flow of solvent to clean the film (201) from a few millimeters outside the edge of the substrate (124). This process is referred to as edge bead cleaning (EBR) or edge bead removal. The width of the edge of the substrate (124) from which the film (201) is removed is the edge bead width (202).

[0044] An enlarged cross-sectional view of the sidewall (204) of the film (201) after EBR is shown in FIG. 7c. The exposed sidewall (204) may be affected by EBR and may form an edge bead hump (206) around the perimeter of the film (201). Physical forces from the solvent flow during EBR may further increase the height of the edge bead hump (206). The edge bead hump (206) is undesirable because it causes nonworking circuits and reduced yield by distorting the device pattern and device geometry near the edge of the substrate (124).

[0045] The optical sensor (144) can monitor edge bead hump (206) parameters, such as edge bead hump position, edge bead hump height, and edge bead removal width, throughout the EBR process. The controller (102) can correlate coating machine data, such as the position and orientation of the EBR dispensing nozzle (136), EBR dispensing speed, EBR step rpm, EBR scan-in speed, and EBR cast time, with edge bead parameters, such as edge bead width (202), edge bead hump (206) position and height, derived from the optical sensor (144) data. Next, the controller (102) can adjust the position and angle of the EBR dispensing nozzle (136), and the EBR dispensing speed, EBR scan-in speed, EBR step rpm, and EBR cast time, thereby adjusting the edge bead width (202) of the edge bead being removed and the inclination of the side wall (204) of the edge bead hump (206).

[0046] FIG. 8 illustrates a cross-sectional view of a heat treatment module (800) according to one embodiment of the present application. For example, it may be a post-application heat treatment (PAB) module (106) of a coating track system (100 and 200), or a post-exposure heat treatment (PEB) module (112) or a hard heat treatment module (116) of a coating track system (200). It may also be a solvent annealing heat treatment machine used during a direct self-assembly process.

[0047] The controller (102) can correlate a changing interference pattern (Fig. 5) from the optical sensor (144) of the heat treatment module (800) with the changing thickness of the film (201). The change in the film thickness of the film (201) within the heat treatment module (800) is not as large as in the coating module (104). The interference pattern (Fig. 5) from the laser transceiver within the heat treatment module (800) may be only a few interference fringes or partial fringes. Using this data, the controller (102) can adjust the temperature ramp rate, the heat treatment temperature, or the heat treatment duration to control the changing film thickness. The controller (102) can terminate the heat treatment when the target thickness of the film (201) is reached.

[0048] The concentration of volatile organic compounds in the heat treatment module (800) changes throughout the heat treatment process. The controller (102) can adjust the temperature ramp rate, the heat treatment temperature, and the heat treatment duration to control the changing concentration of volatile organic compounds in the heat treatment module (800) using VOC concentration data. The controller (102) can terminate the heat treatment process when a target VOC concentration is reached.

[0049] A substrate (124) having a film (201) is placed on a heat treatment plate (212) inside a heat treatment module (800). The heat treatment plate (212) may have a number of heater zones, such as a first zone (214) and a second zone (216), in which the temperature can be controlled independently. The substrate (124) and the film (201) may be heated to remove the solvent as in PAB, heated to induce a chemical amplification reaction as in PEB, or heated to induce a cross-linking reaction as in hard heat treatment. The heat treatment process may be monitored in real time through sensors such as photosensor(s) (144) or volatile organic compound (VOC) sensor(s) (146).

[0050] The controller (102) can collect sensor data from other sensors (142), such as an ambient temperature sensor, an ambient pressure sensor, and an ambient gas flow sensor, as well as from optical sensor(s) (144) and / or volatile organic compound (VOC) sensor(s) (146). Additionally, the controller (102) can be connected to a line (152) and can receive data regarding the status of various heat treatment module components, such as the mass plant exhaust gas pressure (226), the location of the exhaust gas valve (224), the heat treatment plate (212), the temperature of the first and second zones (214 and 216), and the location of the gas valve (220) for the ambient intake port (218). The controller (102) can receive data from these various heat treatment module (800) components and can make adjustments to these various heat treatment module (800) components based on the data received from the membrane monitoring sensor. The controller (102) can be connected to an integrated advanced process control / defect detection and classification system (APC / FDC) (108).

[0051] Process control of a heat treatment process within a heat treatment module (800), in which a controller (102) communicates with an Advanced Process Control (APC) / Fault Detection and Correction (FDC) system (APC / FDC system (108)), is illustrated in the graphs of FIGS. 9 and 10. The flowchart of FIG. 11 illustrates the control of a process within a coating track system (200) using a controller (102) communicating with the APC / FDC system (108) and sensor data, in accordance with an embodiment of the present invention. For example, sensor data from a volatile organic compound (VOC) sensor (146) is used, but optical sensor (144) data, such as thickness and refractive index data, may also be appropriately used. Additionally, the heat treatment process within the heat treatment module (800) can be controlled using data from the VOC sensor (146) as well as from the optical sensor (144) within the heat treatment module (800).

[0052] FIG. 9 is a graph illustrating the sensor temperature trace (230) of the substrate (124) within the heat treatment module (800) versus time. The software of the FDC system (109) can divide the sensor temperature trace (230) and assign FDC variables to each segment. These FDC variables can be tracked and compared with FDC variable data collected from other wafers and displayed on a control chart. For example, as the substrate (124) ramps to a target heat treatment temperature, the first and second segments (232 and 234) monitor the temperature ramp and temperature stabilization of the substrate (124) at the beginning of the heat treatment process. In the first segment (232), the FDC software can assign FDC variables such as the starting temperature, the ending temperature, the temperature ramp rate, and the temperature ramp time. In the third segment (236) where the film is heat-treated until target film characteristics are achieved, the FDC software can assign and monitor FDC variables such as the start temperature, end temperature, maximum temperature, average temperature, minimum temperature, and heat treatment time.

[0053] During the film heat treatment process, the controller (102) collects data from the VOC sensor (146) (step (250) of FIG. 11) and communicates it to the FDC system (109). The FDC software prepares a graph (240) (trace) of VOC sensor data versus time, as schematically illustrated in FIG. 10 (step (252) of FIG. 11). Then, the FDC software divides the graph (trace) (240) of VOC data and assigns an FDC variable to each segment (step (254) of FIG. 11). During a rapid rise in the substrate (124) temperature (first and second segments (232 and 234) (Fig. 9)), the volatile organic compound concentration, as measured by the volatile organic compound (VOC) sensor (146), rises rapidly as illustrated in the VOC FDC segments (242 and 246) (Fig. 10). The FDC variables in each VOC segment (242 and 244) may be FDC variables such as minimum concentration, maximum concentration, average concentration, rate of change of maximum concentration, and segment time. While the substrate (124) is heat-treated at the temperature of the third segment (236) (Fig. 9), the volatile organic compound concentration peaks in the FDC segment (246) and then decreases (Fig. 10). VOC FDC variables such as starting concentration, peak concentration, rate of change of maximum concentration, ending concentration, and segment duration may be assigned to the VOC FDC segment (246). VOC FDC variables such as starting concentration, concentration decrease rate, ending concentration, and decrease duration may be assigned to the VOC FDC segment (248) where the VOC concentration decreases rapidly.

[0054] FDC software can form a model that predicts FDC VOC concentration variable values ​​throughout the substrate (124) heat treatment process based on FDC wafer temperature variable data received from the controller (102). For each VOC FDC segment, FDC VOC variable values ​​can be predicted using wafer temperature data. Actual FDC VOC sensor data for the FDC VOC variable can be compared with the predicted FDC VOC variable value, or with known past appropriate "best" VOC sensor data to determine whether an FDC defect flag should be generated.

[0055] In response to a step in which it is determined that an FDC variable is in a warning state or out of specification (step (258) of FIG. 11), the FDC system (109) generates an FDC fault flag and communicates it to the APC system (107) (step (260) of FIG. 11). Then, the APC system (107) communicates the processed data and / or commands to the controller (102), and consequently, the controller (102) adjusts the process in real time to bring the FDC variable closer to the center of the specification or process window (step (262) of FIG. 11). For example, the controller (102) can adjust the heat treatment temperature, the heat treatment temperature ramp rate, the heat treatment time, the temperature of the substrate holder zone, and adjust ambient conditions such as the ambient gas flow rate and the ambient exhaust gas flow rate. Additionally, the controller (102) may provide feedback adjustments to the heat treatment method before heat treating the next substrate (124) (step (266) of FIG. 11), and may provide feedforward adjustments to the method of a future process step for the current substrate (124) or to a future step of the current method (step (268) of FIG. 11).

[0056] In one embodiment, the deviation that causes the FDC fault flag to be generated may be a predefined parameter, such as, for example, a percentage of deviation from predicted sensor data or past best VOC sensor data. This predefined percentage of deviation may be 10% in one embodiment, but other embodiments may use different percentages of deviation from 1% to 20%.

[0057] In response to the step of determining that the FDC variable is within the specifications, the FDC fault flag or sensor data is not communicated to the APC system (107) (step (268) of FIG. 11). In this case, one option is to take no action (step (272) of FIG. 11).

[0058] When the FDC variable reaches the target value, the FDC defect flag is not transmitted to the APC system (107) (step (268) of FIG. 11). In this case, the controller (102) can terminate the current process step and proceed to the next process step (step (270) of FIG. 11). The next process step may be the next step of a heat treatment process, such as a cooling step, or the next step may be to proceed the substrate (124) to the resist development module (114).

[0059] Monitoring and control of the film (201) within the coating track system (200), in which the controller (102) communicates with the APC / FDC system (108), is illustrated using a heat treatment process. The FDC system (109) can be used to monitor all processes executed within the coating track system (200) and can generate an FDC defect flag if defects such as non-uniform coating, bubbles in the resist, and wedge wafers are detected.

[0060] Additionally, the controller (102) can receive data streams directly from the photosensor (144) and directly from the volatile organic compound (VOC) sensor (146), and the controller software can correlate changes in the photosensor data with changes in the VOC sensor data. For example, the controller (102) can correlate a sudden change in the thickness of the film (201) or a sudden change in the solvent within the film (201) from the photosensor data with changes in the VOC sensor data.

[0061] Directional self-assembly (DSA) is a process in which next-generation sublithographic geometries can be formed using current-generation lithographic tools. This process involves the use of block copolymers that self-assemble into repeating patterns during a thermal annealing process requiring precise control. Precise control of DSA annealing and solvent DSA annealing is provided by the described embodiments. Solvent annealing may be performed in a solvent annealing heat treatment machine specifically designed for solvent annealing heat treatment and may be similar to a heat treatment module (800) in some embodiments.

[0062] FIGS. 12a through 12e illustrate a graphoepitaxy directional self-assembly (DSA) patterning process for forming a sublithographic pattern. FIGS. 13a through 13h illustrate a chemical epitaxial DSA patterning process for a sublithographic pattern. According to the DSA patterning process, using 193 nm lithography, a pattern having lines and spatial geometric structures of 20 nm or less can be formed. The DSA coating method uses a mixture of two mutually repulsive block copolymers (BCP), such as PS-b-PMMA (poly(styrene-block-methyl methacrylate)).

[0063] Briefly, as illustrated in FIGS. 12a through 12e, in a graphoepitaxy DSA process, a pre-pattern geometric structure (282) formed on a substrate (124) causes the BCP (284) to be separated into a regular pattern of separate BCP regions according to carefully controlled solvent annealing heat treatment conditions. The pre-pattern geometric structure (282) can cause the BCP (284) to form lines and spaces, form contact holes, or form any other regularly spaced sublithographic features which may be desirable. The molecular weight of the copolymer in the BCP (284) can be engineered to produce the desired DSA geometric structure size and geometric structure spacing.

[0064] In the chemical epitaxy DSA process illustrated in FIGS. 13a to 13h, a template surface geometric structure / energy that combines with one of the BCP components is formed on the substrate (124).

[0065] Often, self-assembled sublithographic patterns have regions and defects that are not properly formed after the BCP (284) is spin-coated onto the substrate. Where possible, the BCP (284) is heated above the glass transition temperature to anneale the defects and separate the block copolymer regions (e.g., the first copolymer (286) and the second copolymer (288)) into the desired sublithographic geometry. Often, the BCP (284) is thermally decomposed before reaching the glass transition temperature. An alternative method is to introduce solvent vapor onto the BCP (284) film in a solvent annealing heat treatment. As the solvent is absorbed by the BCP (284) film, it expands. Accordingly, the mobility of the BCP regions is increased. Using solvent annealing heat treatment, the defects can be annealed, and the region geometry can be fixed at a temperature much lower than the temperature at which the BCP (284) decomposes. At the end of the solvent annealing heat treatment, it is desirable to remove the solvent as quickly as possible to fix the sublithographic geometry in place. Some BCPs require the solvent annealing heat treatment process to be repeated multiple times to eliminate all non-uniformities and all defects from the DSA pattern. This requires a very carefully controlled solvent annealing heat treatment procedure, which is made possible by the embodiments of the present application.

[0066] The increase in BCP (284) thickness due to expansion during solvent annealing heat treatment can be monitored using an optical sensor (144), such as a laser transceiver. A controller (102) can control the solvent annealing heat treatment process using the optical sensor data.

[0067] Alternatively, the VOC sensor (146) can monitor the concentration of the solvent in the solvent annealing heat treatment unit throughout the solvent annealing heat treatment process. The controller (102) can control the solvent annealing process using the VOC data. For more precise control of the solvent annealing heat treatment process, the controller (102) can use sensor data from the VOC sensor (146) as well as the optical sensor (144) in the solvent annealing heat treatment unit.

[0068] FIG. 12a illustrates regularly spaced pre-pattern geometric structures (282) on a substrate (124). These pre-pattern geometric structures (282) can be formed using 193 nm lithography. The substrate (124) may be a silicon substrate or other materials such as silicon dioxide or metal. In the graphoepitax process, the substrate (124) is neutral to both block copolymer components (i.e., the first copolymer (286) and the second copolymer (288)) within the BCP (284). The substrate (124) does not preferentially attract or repel either block copolymer component. The regularly spaced pre-pattern geometric structures (282) mask the substrate (124) during subsequent BCP etching and subsequent substrate (124) etching.

[0069] In FIG. 12b, the substrate (124) and the pre-pattern geometric structure (282) are coated with a solution of BCP (284). The solution of BCP (284) can be distributed onto the substrate (124) using a coating track system (200).

[0070] FIG. 12c illustrates a BCP layer after a precisely controlled annealing heat treatment has been performed to separate incompatible copolymers (i.e., the first copolymer (286) and the second copolymer (288)) within the BCP (284) into separate block copolymer regions. The annealing heat treatment process can be monitored and controlled using a photosensor (144) and / or a VOC sensor (146). If the annealing temperature required to induce self-assembly of the block copolymer is too high, a solvent annealing heat treatment or multiple solvent annealing heat treatments may be performed.

[0071] In this exemplary embodiment, one of the copolymers (i.e., the first copolymer (286)) is separated into regularly spaced cylinders (285) of regular size within the substrate of the other copolymer (i.e., the second copolymer (288)). The size and spacing of the cylinders (285) may be determined by the molecular weight of the block copolymers (i.e., the first copolymer (286) and the second copolymer (288)) within the BCP (284) and by the size and spacing of the regularly spaced pre-pattern geometric structures (282). A photosensor (144) may be used to monitor the state of the BCP (284) throughout the annealing process as the non-copolymerized block copolymers (i.e., the first copolymer (286) and the second copolymer (288)) are separated. The controller (102) in the coating track system (200) can adjust the solvent annealing heat treatment process in real time as needed, or provide feedback commands for the next substrate (124) or feedforward commands for future process steps.

[0072] In FIG. 12d, the substrate of the second copolymer (288) is anisotropically etched to expose the lower substrate (124). The first copolymer (286) forming the cylinder (285) acts as an etching mask for the second copolymer (288) between it and the substrate (124). This graphoepitaxing process forms a sublithographic pattern of lines and spaces of the same size.

[0073] FIG. 12e illustrates a substrate (124) after etching through regularly spaced pre-pattern geometric structures (282) and cylinders (285) as an etching mask. Then, the pre-pattern geometric structures (282) and cylinders (285) are removed.

[0074] FIGS. 13a through 13f illustrate an exemplary chemical epitaxy DSA process. In the chemical epitaxy process, a block copolymer (BCP) compound layer (295) exposed to a space (292) within a neutral layer (290) attracts one of the block copolymer components (e.g., a second copolymer (288)) and repels the other (e.g., a first copolymer (286)).

[0075] In FIG. 13a, a BCP compounding layer (295) that is compounded with a second copolymer (288) in the BCP (284) is deposited on a substrate (124). The substrate (124) may be a silicon substrate or other substrates such as silicon-on-insulator, silicon-on-glass, gallium arsenide, indium phosphide, silicon dioxide, or metal. The BCP compounding layer (295) may be a hydrophobic layer for repelling hydrophilic block copolymer components or a hydrophilic layer for attracting hydrophilic block copolymer components.

[0076] In FIG. 13b, a pre-pattern geometric structure (282) of the photoresist is formed on the BCP compound layer (295).

[0077] In FIG. 13c, a neutral layer (290) is deposited over the pre-pattern geometric structure (282) and over the BCP compatibility layer (295) exposed at the opening between the pre-pattern geometric structures (282). On the sidewalls of the pre-pattern geometric structure (282), the neutral layer (290) is deposited with little or no amount. This can be achieved using atomic layer deposition (ALD) or gas cluster ion beam (GCIB) deposition. The neutral layer (290) with little or no amount on the sidewalls facilitates the lift-off process. The neutral layer (290) is selected to be compatible with both block copolymer components (i.e., the first copolymer (286) and the second copolymer (288)) in the BCP (284). The neutral layer (290) does not preferentially attract or repel either of the BCP components (i.e., the first copolymer (286) and the second copolymer (288)).

[0078] In FIG. 13d, the pre-pattern geometric structure (282) is dissolved using a lift-off process. Accordingly, the surface of the BCP compound layer (295) within the space (292) (an opening in the neutral layer (290)) is exposed.

[0079] In FIG. 13e, the BCP compound layer (295) and the neutral layer (290) exposed within the space (292) are coated with a BCP (284) solution. The BCP (284) solution can be distributed onto the substrate (124) using a coating track system such as the coating track system (200) described earlier. One of the block copolymer components in the BCP (284) solution (e.g., the second copolymer (288)) is attracted to the BCP compound layer (295) exposed within the space (292) in the neutral layer (290), while the other block copolymer component (e.g., the first copolymer (286)) is repelled.

[0080] FIG. 13f illustrates a BCP (284) layer after a precisely controlled solvent annealing heat treatment has been performed, for example, in a solvent annealing heat treatment machine. Some BCPs may require multiple solvent annealing heat treatments. During the solvent annealing heat treatment, a compounding BCP component (e.g., a second copolymer (288)) is drawn into a BCP compounding layer (295) exposed in a space (292) within a neutral layer (290). The geometric structure (283) of the second copolymer (288) formed in the space (292) is pinned to the lower BCP compounding layer (295). The pinned second copolymer (288) causes the two non-compatible BCP components (i.e., the first copolymer (286) and the second copolymer (288)) to be separated into a regular pattern of separate BCP regions on the exposed neutral layer (290).

[0081] FIG. 13g illustrates the first copolymer remaining after an etching process that removes the second copolymer (288). Additionally, this etching process can be performed through the lower neutral layer (290) and through the BCP compound layer (295), and can be stopped on the lower substrate (124). The etching process does not etch or remove the first copolymer (286), which can be used as a hard mask (287) for etching a pattern into the lower substrate (124).

[0082] FIG. 13h illustrates a device manufactured after patterning a substrate (124) with a hard mask (287) and subsequently removing any remaining hard mask (287) along with underlying layers such as a neutral layer (290) and a BCP compounding layer (295). Precise control of the DSA process is important in the chemical epitaxy DSA process, throughout the DSA coating process and during the DSA solvent annealing heat treatment.

[0083] The method of the embodiment describes a controller of a coating track system (100 and 200) that collects data from a film process monitoring sensor, such as a photosensor (144) and a volatile organic compound sensor (146), and uses this data to control various aspects of the coating track system (100 and 200) throughout the coating and heat treatment process, particularly during the DSA coating and DSA solvent annealing heat treatment process.

[0084] Exemplary embodiments of the present invention are summarized herein. Other embodiments may be understood from the entire specification as well as from the claims submitted herein.

[0085] Example 1. A method for processing a plurality of substrates comprises the steps of: loading the substrates onto a coating track; moving the substrates into a module of the coating track; performing a process for changing a film formed on the substrates; and, in a controller, acquiring photosensor data from a photosensor. The photosensor data includes measurements of the characteristics of the film. The method comprises the steps of determining a drying metric based on the characteristics of the film, and adjusting process parameters of the process based on the determined drying metric.

[0086] Example 2. The method of Example 1, wherein the step of adjusting the process parameters comprises: providing a feedback signal for adjusting the process parameters to process a subsequent substrate; determining an end point of the process and terminating the process; providing a feedforward signal for adjusting a method for a subsequent process for the substrate; and providing a feedforward signal for adjusting a method for a current process.

[0087] Example 3. A method in which, in either Example 1 or 2, the module comprises a coating module, a heat treatment module, or a solvent annealing heat treatment unit.

[0088] Example 4. In any one of Examples 1 to 3, the step of performing the process includes the step of performing a directional self-assembly (DSA) coating process, and the step of adjusting the process parameters of the process includes the step of adjusting the solvent saturation time, solvent saturation temperature, solvent saturation concentration, solvent discharge start time, solvent discharge rate, solvent discharge duration, DSA exhaust gas conditions, DSA process spin speed, ambient gas flow rate, solvent discharge temperature, DSA annealing temperature, DSA annealing time, or DSA process conditions.

[0089] Example 5. A method in any one of Examples 1 to 4, wherein the controller transmits optical sensor data to a fault detection and correction (FDC) system and receives processed optical sensor data from the FDC system.

[0090] Example 6. A method in any one of Examples 1 to 5, wherein the optical sensor is a laser transceiver, the optical sensor data is a series of interference patterns, and further comprising the step of converting the optical sensor data into characteristics of the film in the controller.

[0091] Example 7. A method in any one of Examples 1 to 6, wherein the step of determining the drying metric comprises the step of determining the evaporation rate of a component within the film based on the photosensor data.

[0092] Example 8. In any one of Examples 1 to 7, the photosensor comprises a plurality of spaced-apart photosensors on the substrate, the step of acquiring photosensor data comprises receiving photosensor data from the plurality of photosensors, and the method further comprises the step of converting the photosensor data into film characteristic uniformity across the substrate.

[0093] Example 9. A method for processing a plurality of wafers comprises: loading a substrate into a module having a volatile organic compound (VOC) sensor; processing the substrate in the module to change a film formed on the substrate; acquiring VOC sensor data from the VOC sensor during the processing step; and adjusting process parameters of the processing step in a controller based on the VOC sensor data.

[0094] Example 10. The method of Example 9, wherein the step of adjusting the process parameters comprises: providing a feedback signal for adjusting the process parameters to process a subsequent substrate; determining an end point of the processing step and terminating the processing step; providing a feedforward signal for adjusting a method for a subsequent process for the substrate; or providing a feedforward signal for adjusting a method for a current process.

[0095] Example 11. A method in which, in either Example 9 or 10, during the processing step, further comprises the step of acquiring optical sensor data from an optical sensor, wherein the optical sensor is disposed within the module, and the step of adjusting the process parameter comprises the step of adjusting the process parameter based on the optical sensor data.

[0096] Example 12. A method further comprising, in any one of Examples 9 to 11, the step of correlating the optical sensor data with the VOC sensor data; and the step of performing a first correlation between the concentration of volatile organic compounds obtained from the VOC sensor data and the characteristics of the membrane obtained from the optical sensor data, or a second correlation between the change in the concentration of volatile organic compounds and the change in the characteristics of the membrane, or a third correlation between the change in the concentration of volatile organic compounds and the duration of the process step of the processing step in the controller.

[0097] Example 13. A method in any one of Examples 9 to 12, wherein the step of adjusting the process parameters of the processing step comprises: a step of converting the VOC sensor data into ambient conditions within the module or characteristics of the film during the processing step; and a step of adjusting the process parameters based on the ambient conditions or characteristics of the film.

[0098] Example 14. A method in any one of Examples 9 to 13, wherein the module includes a coating module and the step of adjusting the process parameters includes adjusting the coating process parameters of the coating module, or wherein the module includes a heat treatment module and the step of adjusting the process parameters includes adjusting the heat treatment process parameters of the heat treatment module.

[0099] Example 15. A method in any one of Examples 9 to 14, wherein the step of processing the substrate includes the step of performing a spin coating process.

[0100] Example 16. A method in any one of Examples 9 to 15, wherein the controller further comprises the step of comparing the VOC sensor data with stored best sensor data or a stored endpoint threshold, and the step of adjusting the process parameter of the processing step comprises the step of adjusting the process in response to the step of determining that the difference between the stored best sensor data and the VOC sensor data exceeds a predetermined value, or the step of terminating the process in response to the step of determining that the VOC sensor data exceeds the stored endpoint threshold.

[0101] Example 17. A method for processing a plurality of wafers comprises the steps of: loading a substrate into a module having an edge bead sensor; and processing the substrate in the module to change a film formed on the substrate. The film comprises edge beads at the edges of the substrate. The method further comprises the steps of: acquiring edge bead sensor data from the edge bead sensor during the processing step; and adjusting process parameters of the processing step in a controller based on the edge bead sensor data.

[0102] Example 18. Method according to Example 17, wherein the edge bead sensor comprises a light sensor.

[0103] Example 19. A method in which, in either Example 17 or 18, the step of adjusting the process parameters of the processing step comprises the step of adjusting the process parameters of the processing step for a subsequent substrate.

[0104] Example 20. A method in any one of Examples 17 to 19, wherein the step of adjusting the process parameters of the processing step comprises adjusting the width of a portion of the film removed by the processing step, the width of the edge bead hump, the height of the edge bead hump, or the slope of the edge bead hump.

[0105] Although the present invention has been described with reference to exemplary embodiments, such description is not intended to be interpreted in a limiting sense. By referring to the description, various modifications and combinations of the exemplary embodiments, as well as other embodiments of the present invention, will be apparent to those skilled in the art. Accordingly, the appended claims are intended to include any such modifications or embodiments.

Claims

Claim 1 A method for processing a plurality of substrates, comprising: loading the substrates onto a coating track; moving the substrates into a module of the coating track; performing a process for changing a film formed on the substrates; in a controller, acquiring optical sensor data from an optical sensor, wherein the optical sensor data includes measurements of characteristics of the film, and the measurements of characteristics of the film include the thickness, solvent content, and refractive index of the film; determining a drying metric based on the characteristics of the film; and adjusting process parameters of the process based on the determined drying metric. Claim 2 A method according to claim 1, wherein the step of adjusting the process parameters comprises: providing a feedback signal for adjusting the process parameters to process a subsequent substrate; determining an end point of the process and terminating the process; providing a feedforward signal for adjusting a method for a subsequent process for the substrate; and providing a feedforward signal for adjusting a method for a current process. Claim 3 The method according to claim 1, wherein the module comprises a coating module, a heat treatment module, or a solvent annealing heat treatment unit. Claim 4 The method according to claim 1, wherein the step of performing the process includes the step of performing a directional self-assembly (DSA) coating process, and the step of adjusting the process parameters of the process includes the step of adjusting the solvent saturation time, solvent saturation temperature, solvent saturation concentration, solvent discharge start time, solvent discharge rate, solvent discharge duration, DSA exhaust gas conditions, DSA process spin rate, ambient gas flow rate, solvent discharge temperature, DSA annealing temperature, DSA annealing time, or DSA process conditions. Claim 5 A method according to claim 1, wherein the controller transmits optical sensor data to a fault detection and correction (FDC) system and receives processed optical sensor data from the FDC system. Claim 6 A method according to claim 1, wherein the optical sensor is a laser transceiver, the optical sensor data is a series of interference patterns, and further comprising the step of converting the optical sensor data into characteristics of the film in the controller. Claim 7 A method according to claim 1, wherein the step of determining the drying metric includes the step of determining the evaporation rate of a component within the film based on the optical sensor data. Claim 8 In claim 1, the optical sensor comprises a plurality of optical sensors spaced apart on the substrate, the step of acquiring the optical sensor data comprises receiving the optical sensor data from the plurality of optical sensors, and the method further comprises the step of converting the optical sensor data into film characteristic uniformity across the substrate. Claim 9 A method for processing a plurality of wafers, comprising: loading a substrate into a module having a volatile organic compound (VOC) sensor; processing the substrate in the module to change a film formed on the substrate; acquiring VOC sensor data from the VOC sensor during the processing step; and adjusting process parameters of the processing step in a controller based on the VOC sensor data, wherein the step of adjusting the process parameters of the processing step comprises: converting the VOC sensor data into ambient conditions in the module or characteristics of the film during the processing step; and adjusting the process parameters based on the ambient conditions or characteristics of the film. Claim 10 In claim 9, the step of adjusting the process parameters comprises: providing a feedback signal for adjusting the process parameters to process a subsequent substrate; determining an end point of the processing step and terminating the processing step; providing a feedforward signal for adjusting a method for a subsequent process for the substrate; or providing a feedforward signal for adjusting a method for a current process. Claim 11 A method according to claim 9, further comprising, during the processing step, a step of acquiring optical sensor data from an optical sensor, wherein the optical sensor is disposed within the module, and the step of adjusting the process parameter includes a step of adjusting the process parameter based on the optical sensor data. Claim 12 A method according to claim 11, further comprising: a step of correlating the optical sensor data with the VOC sensor data; and a step of performing a first correlation between the concentration of volatile organic compounds obtained from the VOC sensor data and the characteristics of the membrane obtained from the optical sensor data, or a second correlation between the change in the concentration of volatile organic compounds and the change in the characteristics of the membrane, or a third correlation between the change in the concentration of volatile organic compounds and the duration of the process step of the processing step in the controller. Claim 13 delete Claim 14 A method according to claim 9, wherein the module includes a coating module, and the step of adjusting the process parameters includes the step of adjusting the coating process parameters of the coating module, or wherein the module includes a heat treatment module, and the step of adjusting the process parameters includes the step of adjusting the heat treatment process parameters of the heat treatment module. Claim 15 In claim 9, the step of processing the substrate includes the step of performing a spin coating process. Claim 16 A method according to claim 9, wherein the controller further comprises the step of comparing the VOC sensor data with stored best sensor data or a stored endpoint threshold, and the step of adjusting the process parameter of the processing step comprises the step of adjusting the process in response to a step of determining that the difference between the stored best sensor data and the VOC sensor data exceeds a predetermined value, or the step of terminating the process in response to a step of determining that the VOC sensor data exceeds the stored endpoint threshold. Claim 17 A method for processing a plurality of wafers, comprising: loading a substrate into a module having an edge bead sensor; processing the substrate in the module to change a film formed on the substrate, wherein the film comprises edge beads at the edges of the substrate; acquiring edge bead sensor data from the edge bead sensor during the processing step; and adjusting process parameters of the processing step in a controller based on the edge bead sensor data. Claim 18 In claim 17, the method wherein the edge bead sensor comprises a light sensor. Claim 19 In claim 18, the step of adjusting the process parameters of the processing step comprises the step of adjusting the process parameters of the processing step for a subsequent substrate. Claim 20 In claim 19, the step of adjusting the process parameters of the processing step comprises adjusting the width of a portion of the film removed by the processing step, the width of the edge bead hump, the height of the edge bead hump, or the slope of the edge bead hump.

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