Display devices, display modules, and electronic devices

Abstract

A display device having an imaging function is provided. A high-resolution imaging device or display device is provided. The display device is a display device having a first switch to a third switch, a first transistor and a second transistor, a capacitive element, a first wiring and a second wiring, and a light-emitting element. One electrode of the first switch is electrically connected to the first wiring, and the other electrode is electrically connected to the gate of the first transistor and one electrode of the capacitive element. One electrode of the second switch is electrically connected to one of the source and drain of the first transistor, one electrode of the light-emitting element, and the other electrode of the capacitive element, and the other electrode is electrically connected to the gate of the second transistor and one electrode of the third switch. The other electrode of the third switch is electrically connected to the second wiring. The light-emitting element has a function of emitting light of a first color and a function of receiving light of a second color.

Description

Technology Field

[0001] One embodiment of the present invention relates to a display device. One embodiment of the present invention relates to a display device having an imaging function.

[0002] Furthermore, one embodiment of the present invention is not limited to the technical field described above. Examples of the technical field of one embodiment of the present invention disclosed in this specification, etc. include semiconductor devices, display devices, light-emitting devices, capacitor devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, methods for driving the same, or methods for manufacturing the same. A semiconductor device refers to any device capable of functioning by utilizing semiconductor characteristics. Background Technology

[0003] In recent years, display devices are required to be highly detailed in order to display high-resolution images. In addition, in information terminal devices such as smartphones, tablet terminals, and laptop PCs (personal computers), display devices are required to have low power consumption in addition to high detail. Furthermore, display devices are required that not only display images but also have various added functions, such as the function as a touch panel and the function of capturing fingerprints for authentication.

[0004] As a display device, for example, a light-emitting device having a light-emitting element is being developed. A light-emitting element (also referred to as an EL element) utilizing the electroluminescence (hereinafter referred to as EL) phenomenon is being applied to display devices, having features such as being easy to make thin and lightweight, capable of high-speed response to input signals, and capable of driving using a DC constant voltage power supply. For example, Patent Document 1 discloses a flexible light-emitting device to which an organic EL element is applied. Prior art literature

[0005] Japanese Patent Publication No. JP 2014-197522 The problem to be solved

[0006] One embodiment of the present invention has as its objective to provide a display device having an imaging function. One embodiment of the present invention has as its objective to provide an imaging device or a display device having a high-resolution display or imaging unit. One embodiment of the present invention has as its objective to provide an imaging device or a display device capable of capturing high-resolution images. One embodiment of the present invention has as its objective to provide an imaging device or a display device capable of performing high-sensitivity imaging. One embodiment of the present invention has as its objective to provide a display device capable of acquiring biometric information, such as fingerprints. One embodiment of the present invention has as its objective to provide a display device that functions as a touch panel.

[0007] In addition, one embodiment of the present invention has as its objective to reduce the number of components of an electronic device. One embodiment of the present invention has as its objective to provide a display device, an imaging device, or an electronic device having a novel configuration. One embodiment of the present invention has as its objective to at least alleviate at least one of the problems of the prior art.

[0008] Furthermore, the description of these problems does not interfere with the existence of other problems. Also, one embodiment of the present invention is not required to solve all of these problems. Additionally, problems other than these can be derived from the description in the specification, drawings, claims, etc. means of solving the problem

[0009] One embodiment of the present invention is a display device having first to third switches, a first transistor, a second transistor, a capacitive element, a first wiring, a second wiring, and a light-emitting element. One electrode of the first switch is electrically connected to the first wiring, and the other electrode is electrically connected to the gate of the first transistor and one electrode of the capacitive element. One electrode of the second switch is electrically connected to one of the source and drain of the first transistor, one electrode of the light-emitting element, and the other electrode of the capacitive element, and the other electrode is electrically connected to the gate of the second transistor and one electrode of the third switch. The other electrode of the third switch is electrically connected to the second wiring. The light-emitting element has a function of emitting light of a first color and a function of receiving light of a second color.

[0010] In addition, in the above, it is preferable that during the first period, the first switch, the second switch, and the third switch are in a conductive state, a data potential is supplied to the first wiring, and a first potential is supplied to the second wiring. In addition, during the second period, it is preferable that the second switch and the third switch are in a conductive state, and a second potential is supplied to the second wiring. In addition, it is preferable that the second potential is lower than the first potential.

[0011] In addition, in the above, it is preferable to have a fourth switch. In this case, it is preferable that one electrode of the fourth switch is electrically connected to one electrode of the second switch and the other electrode is electrically connected to one electrode of the light-emitting element. Alternatively, it is preferable that one electrode of the fourth switch is electrically connected to one of the source and drain of the first transistor and the other electrode is electrically connected to one electrode of the light-emitting element.

[0012] In addition, another embodiment of the present invention is a display device having first to sixth transistors, a capacitive element, a light-emitting element, a first wiring, and a second wiring. One of the source and drain of the first transistor is electrically connected to one electrode of the light-emitting element. One of the source and drain of the third transistor is electrically connected to the first wiring, and the other of the source and drain is electrically connected to the gate of the first transistor. One of the source and drain of the fourth transistor is electrically connected to the gate of the second transistor, and the other of the source and drain is electrically connected to the second wiring. One of the source and drain of the fifth transistor is electrically connected to one of the source and drain of the second transistor. One of the source and drain of the sixth transistor is electrically connected to one electrode of the light-emitting element, and the other of the source and drain is electrically connected to the gate of the second transistor. One electrode of the capacitive element is electrically connected to the gate of the first transistor, and the other electrode is electrically connected to either the source or the drain of the first transistor. Additionally, the light-emitting element has the function of emitting light of a first color and the function of receiving light of a second color.

[0013] In addition, in the above, it is preferable to have a seventh transistor. At this time, it is preferable that the seventh transistor has a function of controlling conduction between one of the source and drain of the first transistor and one electrode of the light-emitting element.

[0014] In addition, another embodiment of the present invention is a display device having first to fifth transistors, an eighth transistor, a capacitive element, a light-emitting element, a first wiring, and a second wiring. One of the source and drain of the first transistor is electrically connected to one of the source and drain of the eighth transistor and the gate of the second transistor. One of the source and drain of the third transistor is electrically connected to the first wiring, and the other of the source and drain is electrically connected to the gate of the first transistor. One of the source and drain of the fourth transistor is electrically connected to the gate of the second transistor, and the other of the source and drain is electrically connected to the second wiring. One of the source and drain of the fifth transistor is electrically connected to one of the source and drain of the second transistor. The other of the source and drain of the eighth transistor is electrically connected to one electrode of the light-emitting element. One electrode of the capacitive element is electrically connected to the gate of the first transistor, and the other electrode is electrically connected to either the source or the drain of the first transistor. Additionally, the light-emitting element has the function of emitting light of a first color and the function of receiving light of a second color.

[0015] In addition, in any of the above-described forms, it is preferable to have a third wiring. In this case, it is preferable that the source and drain of the fifth transistor be electrically connected to the third wiring.

[0016] Or, in any of the above-described forms, it is preferable that the other of the source and drain of the fifth transistor is electrically connected to the first wiring.

[0017] In addition, in any of the above-described forms, it is preferable that a data potential is supplied to the first wiring and a first potential is supplied to the second wiring during the first period. In addition, it is preferable that a second potential is supplied to the second wiring during the second period. At this time, it is preferable that the second potential is lower than the first potential.

[0018] In addition, in any of the above-described forms, it is preferable to further include a light-emitting element. In this case, it is preferable that the light-emitting element has the function of emitting light of a second color. In addition, it is preferable that the light-emitting element and the light-emitting element are provided on the same surface.

[0019] In addition, in the above, it is preferable that the receiving and emitting element has a first pixel electrode, a first emitting layer, an active layer, and a first electrode, and the emitting element has a second pixel electrode, a second emitting layer, and a first electrode. In addition, it is preferable that the first pixel electrode and the second pixel electrode are formed by processing the same conductive film.

[0020] In addition, another embodiment of the present invention is a display module having a connector or an integrated circuit and a display device of any of the above-described forms.

[0021] In addition, another embodiment of the present invention is an electronic device having at least one of the above-mentioned display module, an antenna, a battery, a housing, a camera, a speaker, a microphone, a touch sensor, and an operation button. Effects of the invention

[0022] According to one embodiment of the present invention, a display device having an imaging function may be provided. Alternatively, an imaging device or a display device having a high-resolution display or imaging unit may be provided. Alternatively, an imaging device or a display device capable of capturing a high-resolution image may be provided. Alternatively, an imaging device or a display device capable of performing high-sensitivity imaging may be provided. Alternatively, a display device capable of acquiring biometric information such as fingerprints may be provided. Alternatively, a display device functioning as a touch panel may be provided.

[0023] In addition, according to one embodiment of the present invention, the number of components of an electronic device can be reduced. Or, a display device, imaging device, or electronic device having a novel configuration can be provided. Or, at least one of the problems of the prior art can be mitigated.

[0024] Furthermore, the description of these effects does not interfere with the existence of other effects. Also, one embodiment of the present invention does not necessarily have to possess all of these effects. Additionally, other effects may be derived from the description in the specification, drawings, claims, etc. Brief explanation of the drawing

[0025] Figure 1 is a circuit diagram showing an example of a pixel. Figures 2 (A) and (B) are diagrams illustrating an example of the operation method of a pixel circuit. Figures 3 (A) to (C) are diagrams illustrating examples of operation methods of a pixel circuit. Figures 4 (A) to (C) are circuit diagrams showing examples of pixel circuits. Figure 5 is a drawing showing an example of a display device. Figure 6 is a circuit diagram showing an example of a pixel. Figure 7 (A) is a circuit diagram showing an example of a pixel, and Figure 7 (B) is a circuit diagram of a transistor. Figures 8 (A) and (B) are circuit diagrams showing an example of a pixel. Figures 9 (A) and (B) are circuit diagrams showing an example of a pixel. Figures 10 (A) and (B) are drawings showing an example of a display device. Figure 11 is a circuit diagram showing an example of a pixel. FIG. 12 is a diagram illustrating an example of the operation method of a display device. FIG. 13 is a diagram illustrating an example of the operation method of a display device. Figures 14 (A) and (B) are circuit diagrams showing an example of a pixel. Figure 15 is a circuit diagram showing an example of a pixel. Figure 16 is a circuit diagram showing an example of a pixel. FIG. 17 is a diagram illustrating an example of the operation method of a display device. FIG. 18 (A) to (D) are cross-sectional views showing an example of a display device. FIG. 18 (E) to (G) are top views showing an example of a pixel. Figures 19 (A) to (D) are top views showing an example of a pixel. Figures 20 (A) to (E) are cross-sectional views showing an example of a light-emitting element. Figures 21 (A) and (B) are cross-sectional views showing an example of a display device. Figures 22 (A) and (B) are cross-sectional views showing an example of a display device. Figures 23 (A) and (B) are cross-sectional views showing an example of a display device. Figures 24 (A) and (B) are cross-sectional views showing an example of a display device. Figures 25 (A) and (B) are cross-sectional views showing an example of a display device. FIG. 26 is a perspective view showing an example of a display device. FIG. 27 is a cross-sectional view showing an example of a display device. FIG. 28 is a cross-sectional view showing an example of a display device. (A) of FIG. 29 is a cross-sectional view showing an example of a display device. (B) of FIG. 29 is a cross-sectional view showing an example of a transistor. Figures 30 (A) and (B) are drawings showing an example of an electronic device. Figures 31 (A) to (D) are drawings showing examples of electronic devices. Figures 32 (A) to (F) are drawings showing examples of electronic devices. Specific details for implementing the invention

[0026] Hereinafter, embodiments are described with reference to the drawings. However, it is readily understood by those skilled in the art that embodiments can be implemented in many different forms, and that their forms and details can be varied without departing from the intent and scope thereof. Accordingly, the present invention is not to be interpreted as being limited to the contents of the embodiments described below.

[0027] Furthermore, in the configuration of the invention described below, the same reference numerals are commonly used across different drawings for identical parts or parts having the same function, and repetitive descriptions thereof are omitted. Additionally, when referring to parts having the same function, the hatch pattern is identical, and in some cases, no specific reference numeral is assigned.

[0028] In addition, in each drawing described in this specification, the size, thickness, or area of ​​each component may be exaggerated for clarity. Therefore, it is not necessarily limited to that scale.

[0029] In addition, ordinal numbers such as "first," "second," etc. in this specification are attached to avoid confusion of components and are not numerically limited.

[0030] A transistor is a type of semiconductor device capable of realizing amplification of current or voltage, switching operations that control conduction or non-conduction, etc. Transistors in this specification include Insulated Gate Field Effect Transistors (IGFETs) and Thin Film Transistors (TFTs).

[0031] Furthermore, the functions of "source" and "drain" may be interchanged when transistors of different polarities are used or when the direction of current changes during circuit operation. Therefore, in this specification, the terms "source" and "drain" may be used interchangeably.

[0032] Furthermore, in this specification and others, "electrically connected" includes cases where connections are made through "something having an electrical function." Here, "something having an electrical function" is not subject to any particular limitation as long as it enables the exchange of electrical signals between the connected objects. For example, "something having an electrical function" includes electrodes, wiring, switching elements such as transistors, resistive elements, coils, capacitive elements, and other elements having various functions.

[0033] Furthermore, in this specification and others, a node refers to a component (e.g., wiring) that enables electrical connection of components constituting a circuit. Accordingly, "node connected to A" refers to wiring that is electrically connected to A and can be considered to have the same potential as A. Additionally, even if one or more components enabling electrical connection (e.g., switch, transistor, capacitive element, inductor, resistor, diode, etc.) are placed in the middle of the wiring, if the potential can be considered to be the same as A, the wiring is deemed to be a node connected to A.

[0034] In addition, the term EL layer in this specification refers to a layer (also called a light-emitting layer) or a laminate comprising a light-emitting layer provided between a pair of electrodes of a light-emitting element and containing at least a light-emitting material.

[0035] A display panel, which is a form of a display device in this specification and others, has the function of displaying (outputting) an image, etc., on a display surface. Therefore, a display panel is a form of an output device.

[0036] In addition, in this specification and others, a display panel substrate equipped with a connector such as an FPC (Flexible Printed Circuit) or TCP (Tape Carrier Package), or a substrate on which an IC is mounted using a COG (Chip On Glass) method, etc., may be referred to as a display panel module, a display module, or simply a display panel, etc.

[0037] Furthermore, a touch panel, which is a form of a display device in this specification and the like, has the function of displaying an image or the like on a display surface, and the function of a touch sensor that detects contact, pressure, or proximity of a detection body, such as a finger or a stylus, to the display surface. Therefore, a touch panel is a form of an input / output device.

[0038] A touch panel may also be referred to, for example, as a display panel (or display device) having a touch sensor, or a display panel (or display device) having a touch sensor function. A touch panel may be configured to have a display panel and a touch sensor panel. Alternatively, it may be configured to have a function as a touch sensor on the interior or surface of a display panel.

[0039] In addition, in the present specification and other documents, a device having a connector, IC, etc. mounted on a substrate of a touch panel may be referred to as a touch panel module, a display module, or simply a touch panel, etc.

[0040] (Embodiment 1)

[0041] In this embodiment, an example of the configuration of a display device and an example of a driving method of one form of the present invention will be described.

[0042] One embodiment of the present invention is a display device having a plurality of pixels arranged in a matrix. A pixel has one or more subpixels. A subpixel has one or more light-emitting elements.

[0043] A light-emitting element (also called a light-emitting device) is a device that combines the function of a light-emitting element (also called a light-emitting device) that emits light of a first color and the function of a photoelectric conversion element (also called a photoelectric conversion device) that receives light of a second color. A light-emitting element may also be called a multifunctional element, a multifunctional diode, a light-emitting photodiode, or a bidirectional photodiode.

[0044] By arranging multiple subpixels having light-emitting elements in a matrix, the display device can combine the function of displaying an image and the function of capturing an image. Therefore, the display device can also be called a composite device or a multi-functional device.

[0045] [Composition Example 1]

[0046] (Composition Example 1-1)

[0047] A portion of a pixel circuit applicable to a subpixel having a light-emitting element is shown in FIG. 1. The pixel circuit has a switch (SW1), a switch (SW2), a switch (SW3), a transistor (Tr1), a transistor (Tr2), and a light-emitting element (SA). Additionally, it is preferable for the pixel circuit to have a capacitance element (CS1) and a capacitance element (CS2) as capacitance elements for maintaining charge. Furthermore, wiring (SL), wiring (VL1), wiring (AL), wiring (CL), wiring (VCP), wiring (VPI), and wiring (WX) are connected to the pixel circuit.

[0048] Switches (SW1), (SW2), and (SW3) each have two terminals (electrodes) and are devices capable of controlling conduction and non-conduction between the terminals.

[0049] One terminal of the switch (SW1) is electrically connected to the wiring (SL), and the other terminal is electrically connected to the gate of the transistor (Tr1) and one electrode of the capacitance element (CS1). One of the source and drain of the transistor (Tr1) is electrically connected to the wiring (AL), and the other of the source and drain is electrically connected to one terminal of the switch (SW2), one electrode of the light-emitting element (SA), and the other electrode of the capacitance element (CS1). The other terminal of the switch (SW2) is electrically connected to the gate of the transistor (Tr2), one terminal of the switch (SW3), and one electrode of the capacitance element (CS2). The other terminal of the switch (SW3) is electrically connected to the wiring (VL1). The other electrode of the capacitance element (CS2) is electrically connected to the wiring (VCP). One of the source and drain of the transistor (Tr2) is electrically connected to the wiring (WX), and the other of the source and drain is electrically connected to the wiring (VPI). The other electrode of the light-emitting element (SA) is electrically connected to the wiring (CL).

[0050] It is desirable to supply a constant potential to the wiring (VCP) and wiring (VPI). As the constant potential, potential (VDD), potential (VSS), ground potential, reference potential, or common potential may be used.

[0051] In FIG. 1, the anode of the light-emitting element (SA) is configured to be located on the side of the transistor (Tr1). In this case, the potential supplied to the wiring (CL) can be lower than the potential supplied to the wiring (AL). Additionally, the cathode of the light-emitting element (SA) may be configured to be located on the side of the transistor (Tr1), and in this case, the potential supplied to the wiring (CL) can be higher than that supplied to the wiring (AL).

[0052] In addition, while Figure 1 and others show an example of using an n-channel transistor, a p-channel transistor may be applied to some or all of the parts. In this case, it is good to appropriately change various potentials, signals, etc., according to the type of transistor.

[0053] The transistor (Tr1) has the function of controlling the current flowing through the light-emitting element (SA). That is, the transistor (Tr1) functions as a driving transistor. The transistor (Tr1) can control the current flowing through the light-emitting element (SA) according to the potential (data potential) supplied from the wiring (SL) through the switch (SW1). The light-emitting element (SA) can emit light with a brightness corresponding to the said current.

[0054] The conduction state of the transistor (Tr2) changes according to the charge (potential) transferred from the light-emitting element (SA) to the node where the gate is connected. The transistor (Tr2) functions as a read transistor. Additionally, the wiring (WX) functions as a read wiring.

[0055] At least two types of potentials are supplied to the wiring (VL1). One is potential (V0), which is the potential supplied to the source of transistor (Tr1) when recording data potential to the gate of transistor (Tr1). The other is potential (V RS) and is a potential for resetting (initializing) the potential of the node to which the anode of the light-emitting element (SA) is connected. In this way, by supplying two types of potentials through a single wire (VL1), the number of wires can be reduced, and the circuit configuration can be simplified. As a result, the pixel occupancy area can be reduced, and a high-definition display device can be realized. Therefore, not only can images with high display quality be displayed, but high-definition images can also be captured.

[0056] The operation method of the pixel circuit exemplified in Fig. 1 is explained below.

[0057] First, using (A) and (B) of FIG. 2, an example of an operation method when a receiving and emitting element (SA) is used as a emitting element will be explained.

[0058] (A) of FIG. 2 shows the data potential (V) at the gate of the transistor (Tr1). data This schematically illustrates the operation of the period for recording data (data recording period). During the data recording period, switches (SW1), (SW2), and (SW3) are all made conductive.

[0059] In the data recording period, as indicated by the dashed arrow on one side, the data potential (V) from the wiring (SL) through the switch (SW1) at the gate of the transistor (Tr1) data ) is supplied. Also, as indicated by the dashed arrow on the other side, the potential (V0) from the wiring (VL1) is supplied to the other side of the source and drain of the transistor (Tr1) through switches (SW2) and (SW3). Also, at this time, the data potential (V) to the capacitance element (CS1) data It is charged by the potential difference between ) and potential (V0).

[0060] Figure 2 (B) schematically illustrates the operation during the period (maintenance and emission period) in which the gate potential of the transistor (Tr1) is maintained and the light-emitting element (SA) emits light according to the current flowing through the transistor (Tr1). During the maintenance and emission period, switches (SW1), (SW2), and (SW3) are all kept in a non-conducting state. As a result, almost all of the current flowing through the transistor (Tr1) flows to the light-emitting element (SA). In Figure 2 (B), the path of the current is indicated by dashed arrows.

[0061] Next, using (A) to (C) of FIG. 3, an example of an operation method when a light-emitting element (SA) is used as a light-receiving element will be described.

[0062] Figure 3 (A) schematically illustrates the operation during the period (reset period) for initializing the potential of the anode of the light-emitting element (SA). During the reset period, switches (SW1), (SW2), and (SW3) are all made to conduct.

[0063] During the reset period, as indicated by the dashed arrow on one side, the potential (V) from wiring (VL1) to the anode of the light-emitting element (SA) through switches (SW3) and (SW2) RS ) is supplied. Potential (V RS ) shall be at least lower than the potential supplied to the wiring (CL). Potential (V RS It is desirable to set the potential to be lower than the potential (V0).

[0064] In addition, in the case where the cathode of the light-emitting element (SA) is connected to the transistor (Tr1) side, the potential (V RS It is preferable to set the potential ) to be higher than the potential supplied to the wiring (CL) (the potential supplied to the anode of the light-emitting element (SA). In addition, the potential (V RS ) can be set to a potential higher than the potential (V0).

[0065] Also, during the reset period, the potential (V) from the wiring (SL) to the gate of the transistor (Tr1) through the switch (SW1) off ) is supplied. Potential (V off ) is set as the potential that causes the transistor (Tr1) to be in a non-conducting state. By doing so, it is possible to prevent the potential of the anode of the light-emitting element (SA) from changing unintendedly due to the current flowing from the wiring (AL) to the light-emitting element (SA) through the transistor (Tr1) during the subsequent period. For example, potential (V off ) is the potential (V RS The potential can be lower than the potential obtained by adding the threshold voltage of the transistor (Tr1) to ). In particular, the potential (V off ) is the potential (V RS It is desirable to set the potential lower than ).

[0066] Figure 3 (B) schematically illustrates the operation during the period (exposure period) in which light is received by the light-emitting element (SA) and charges are accumulated in the light-emitting element. During the exposure period, the potential difference (Vc) between the anode and cathode of the light-emitting element (SA) changes as charges accumulate at both ends of the light-emitting element (SA).

[0067] During the exposure period, switches (SW1), (SW2), and (SW3) are all set to a non-conducting state. Also, at this time, the potential (V) supplied during the reset period is applied to the gate of transistor (Tr1). off Since the condition is maintained, as shown in the drawing, no current flows through the transistor (Tr1). Therefore, it is possible to prevent the charge accumulated on the anode side of the light-emitting element (SA) from leaking out to the transistor (Tr1) and transistor (Tr2). As a result, high-precision imaging can be performed.

[0068] Figure 3 (C) schematically illustrates the operation during the period (transmission period) in which the charge accumulated in the light-emitting element (SA) is transferred to the node connected to the gate of the transistor (Tr2). During the transmission period, the switch (SW2) is set to a conducting state, and the switches (SW1) and (SW3) are set to a non-conducting state. As a result, as indicated by the dashed arrow, the charge accumulated in the light-emitting element (SA) is transferred through the switch (SW2) to the node connected to the gate of the transistor (Tr2). After the transfer of charge is completed, the switch (SW2) is set to a non-conducting state so that the potential of the gate of the transistor (Tr2) is maintained. At this time, the current (I) according to the gate potential of the transistor (Tr2) S ) flows from wiring (VPI) to wiring (WX).

[0069] In this way, by switching the potential supplied to the wiring (VL1) during the data recording period for display and the reset period for imaging, the number of wirings can be reduced, and the pixel circuit can be simplified. Therefore, it is easy to increase the precision and resolution of the display device. In addition, as the number of wirings is reduced, the power consumption of the display device can also be reduced.

[0070] (Composition Example 1-2)

[0071] An example of a pixel circuit configuration different from that of FIG. 1 is shown in FIG. 4 (A). FIG. 4 (A) is mainly different from the above in that it has a switch (SW4).

[0072] A switch (SW4) is provided between a light-emitting element (SA) and a transistor (Tr1) and can control their conduction and non-conduction. In addition, in (A) of FIG. 4, one terminal (electrode) of the switch (SW4) is electrically connected to the other side of the source and drain of the transistor (Tr1), one terminal of the switch (SW2), and the other electrode of the capacitive element (CS1).

[0073] By making the switch (SW4) non-conductive, the light-emitting element (SA) and the transistor (Tr1) can be electrically isolated. Therefore, the current flowing through the light-emitting element (SA) via the transistor (Tr1) can be blocked regardless of the gate potential of the transistor (Tr1). Accordingly, during the reset period, etc. exemplified above, the potential (V) at the gate of the transistor (Tr1) off There is no need to supply ), so the driving method can be simplified.

[0074] In addition, the switch (SW4) may be provided at the position shown in (B) of FIG. 4. Specifically, one terminal of the switch (SW2) is electrically connected between the light-emitting element (SA) and the switch (SW4).

[0075] At this time, during the exposure period and transmission period, the data potential may be maintained at the gate of the transistor (Tr1). Accordingly, after the transmission period is completed, the switch (SW4) is switched from a non-conducting state to a conducting state, and the switch (SW2) is switched from a conducting state to a non-conducting state, thereby allowing the receiving and emitting element (SA) to emit light immediately without performing new data recording. As a result, the data recording period between the completion of the transmission period and the display of the image becomes unnecessary, the period during which the image is not displayed (non-display period) can be shortened, and loss of display quality can be prevented.

[0076] In addition, Figure 4 (C) shows an example in which the switch (SW2) in the configuration of Figure 4 (A) is removed. By making the switch (SW4) combine the functions of the switch (SW2), the pixel circuit can be simplified.

[0077] [Composition Example 2]

[0078] (Configuration Example 2-1 of a display device)

[0079] A more specific configuration example of a display device of one form of the present invention is described below.

[0080] A block diagram for explaining the configuration of a display device (10) is shown in FIG. 5. The display device (10) has a display section (11), a driving circuit section (12), a driving circuit section (13), a driving circuit section (14), and a circuit section (15), etc.

[0081] The display unit (11) has a plurality of pixels (30) arranged in a matrix. The pixels (30) have subpixels (20R), subpixels (20G), and subpixels (20B). Subpixel (20R) has a light-emitting element, and subpixels (20G) and subpixels (20B) each have a light-emitting element.

[0082] Wiring (SL1), wiring (GL), wiring (RS), wiring (SE), and wiring (WX), etc. are electrically connected to the subpixel (20R). Wiring (SL2) and wiring (GL), etc. are electrically connected to the subpixel (20G). Wiring (SL3) and wiring (GL), etc. are electrically connected to the subpixel (20B).

[0083] Wiring (SL1), wiring (SL2), and wiring (SL3) are each electrically connected to the driving circuit unit (12). Wiring (GL) is electrically connected to the driving circuit unit (13). The driving circuit unit (12) functions as a source line driving circuit (also called a source driver) and supplies a data signal (data potential) to each subpixel through wiring (SL1), wiring (SL2), and wiring (SL3). The driving circuit unit (13) functions as a gate line driving circuit (also called a gate driver) and supplies a selection signal to wiring (GL).

[0084] Wiring (RS) and wiring (SE) are each electrically connected to the driving circuit unit (14). Wiring (WX) is electrically connected to the circuit unit (15). The driving circuit unit (14) has the function of generating a signal to supply to the subpixel (20R) and outputting it to wiring (SE) and wiring (RS), etc. Additionally, the driving circuit unit (14) has the function of generating and outputting a signal to supply to wiring (REN) and wiring (TX) described later. Additionally, the driving circuit unit (13) or the driving circuit unit (12) may have the function of generating a signal to supply to one or both of wiring (REN) and wiring (TX). The circuit unit (15) has the function of receiving a signal output from the subpixel (20R) through wiring (WX) and outputting it externally as image data. The circuit unit (15) functions as a reading circuit.

[0085] (Pixel Composition Example 2-1)

[0086] An example of a circuit diagram of a pixel (30) is shown in FIG. 6. The pixel (30) has a subpixel (20R), a subpixel (20G), and a subpixel (20B). The subpixel (20R) has a circuit (21R), a circuit (22), a light-emitting element (SR), and a transistor (M10). The subpixel (20G) has a circuit (21G) and a light-emitting element (ELG). The subpixel (20B) has a circuit (21B) and a light-emitting element (ELB).

[0087] The circuit (21R) has a transistor (M1), a transistor (M2), a capacitance element (C1), etc. The circuit (22) has a transistor (M11), a transistor (M12), a transistor (M13), a transistor (M14), a capacitance element (C2), etc.

[0088] When a light-emitting element (SR) is used as a light-emitting element, the circuit (21R) functions as a circuit for controlling the light emission of the light-emitting element (SR). The circuit (21R) has the function of controlling the current flowing to the light-emitting element (SR) according to the data potential supplied from the wiring (SL1).

[0089] In addition, when a light-emitting element (SR) is used as a light-receiving element, the circuit (22) functions as a sensor circuit for controlling the operation of the light-emitting element (SR). The circuit (22) has the function of supplying a reverse bias voltage to the light-emitting element (SR), the function of controlling the exposure period of the light-emitting element (SR), the function of maintaining a potential based on the charge transmitted from the light-emitting element (SR), and the function of outputting a signal based on the potential to the wiring (WX).

[0090] The subpixel (20R) shown in FIG. 6 corresponds to the configuration exemplified in FIG. 4 (B). Transistor (M2) corresponds to transistor (Tr1) in FIG. 4 (B), and transistor (M13) corresponds to transistor (Tr2). Likewise, transistor (M1) corresponds to switch (SW1), transistor (M11) corresponds to switch (SW2), transistor (M12) corresponds to switch (SW3), and transistor (M10) corresponds to switch (SW4).

[0091] The gate of transistor (M1) is electrically connected to the wiring (GL), one of the source and drain is electrically connected to the wiring (SL1), and the other of the source and drain is electrically connected to the gate of transistor (M2) and one electrode of the capacitance element (C1). One of the source and drain of transistor (M2) is electrically connected to the wiring (AL), and the other of the source and drain is electrically connected to one of the source and drain of transistor (M10) and the other electrode of the capacitance element (C1). The gate of transistor (M10) is electrically connected to the wiring (REN), and the other of the source and drain is electrically connected to one electrode of the light-emitting element (SR). The other electrode of the light-emitting element (SR) is electrically connected to the wiring (CL).

[0092] Data potential is supplied to wiring (SL1). Anode potential is supplied to wiring (AL). Cathode potential is supplied to wiring (CL). In the configuration shown in FIG. 6, the anode potential is set to a higher potential than the cathode potential. A signal controlling the conduction and non-conduction of the transistor (M10) is supplied to wiring (REN).

[0093] The gate of transistor (M11) is electrically connected to the wiring (TX), and one of the source and drain is electrically connected to one electrode of the light-emitting element (SR) and the other of the source and drain of transistor (M10). The other of the source and drain is electrically connected to the gate of transistor (M13), one of the source and drain of transistor (M12), and one electrode of the capacitance element (C2). The gate of transistor (M12) is electrically connected to the wiring (RS), and the other of the source and drain is electrically connected to the wiring (VL1). The other electrode of the capacitance element (C2) is electrically connected to the wiring (VCP). One of the source and drain of transistor (M13) is electrically connected to the wiring (VPI), and the other of the source and drain is electrically connected to one of the source and drain of transistor (M14). The gate of the transistor (M14) is electrically connected to the wiring (SE), and the other of the source and drain is electrically connected to the wiring (WX).

[0094] A signal controlling the conduction and non-conduction of the transistor (M11) is supplied to the wiring (TX). The potential (V0) and potential (V RS ) is supplied at different periods. A positive potential is supplied to the wiring (VCP). A positive potential is supplied to the wiring (VPI). In the configuration shown in FIG. 6, the potential (V) supplied to the wiring (VL1) RS It is preferable that ) be a potential lower than the cathode potential supplied to the wiring (CL).

[0095] The transistor (M14) functions as a selector transistor for reading. The conduction and non-conduction of the transistor (M14) are controlled by a signal supplied to the wiring (SE). By making the transistor (M14) conduct, the transistor (M13) and the wiring (WX) conduct, and a current (or voltage) according to the gate potential of the transistor (M13) can be output to the wiring (WX).

[0096] Here, for the transistors (M1), (M10), (M11), (M12), and (M14) that function as switches, it is desirable to use transistors with very small leakage current in the non-conduction state. In particular, transistors using oxide semiconductors in the semiconductor layer where the channel is formed can be suitably used. Additionally, it is desirable to use transistors using oxide semiconductors in transistors (M2) and (M13) as well, so that all transistors can be formed through a common fabrication process. Furthermore, silicon (including amorphous silicon, polycrystalline silicon, and single-crystal silicon) may be used in the semiconductor layer where the channel is formed in transistors (M2) and (M13). However, not limited thereto, transistors using silicon in some or all of the transistors may also be used. Additionally, transistors using inorganic semiconductors, compound semiconductors, or organic semiconductors other than silicon in some or all of the transistors may also be used.

[0097] The subpixel (20G) has a circuit (21G) and a light-emitting element (ELG). The subpixel (20B) has a circuit (21B) and a light-emitting element (ELB). The circuit (21G) and the circuit (21B) have the same configuration.

[0098] Circuits (21G) and (21B) have a transistor (M1), a transistor (M2), a transistor (M3), and a capacitance element (C1). Circuits (21G) and (21B) are the same as circuit (21R) except that they have a transistor (M3). The gate of the transistor (M3) is electrically connected to the wiring (GL), and one of the source and drain is electrically connected to the other electrode of the capacitance element (C1), the other of the source and drain of the transistor (M2), and the anode of the light-emitting element (ELG) or light-emitting element (ELB), and the other of the source and drain is electrically connected to the wiring (V0L).

[0099] A constant potential is supplied to the wiring (V0L). For example, the wiring (V0L) may be supplied with a potential (V0) such that the potential supplied to the wiring (VL1) is the same. Additionally, wiring (VL1) may be used instead of wiring (V0L).

[0100] Here, as shown in (A) of FIG. 7, a configuration may be used in which a transistor having a back gate is applied to each transistor. FIG. 7 (A) shows a configuration in which a pair of gates are electrically connected.

[0101] In addition, in FIG. 7 (A), a configuration is shown in which a pair of gates are electrically connected in all transistors, but this is not limited thereto. The pixel (30) may have a transistor in which one gate is connected to another wire. For example, by connecting one of the pair of gates to a wire to which a positive potential is applied, the stability of the electrical characteristics can be improved. In addition, one of the pair of gates may be connected to a wire to which a potential that controls the threshold voltage of the transistor is applied. In addition, as shown in FIG. 7 (B), a transistor in which one of the pair of gates is connected to either the source or the drain may be used. In this case, it is preferable to connect one of the gates to the source. For example, the transistors shown in FIG. 7 (B) can be suitably used for the transistors (M2), (M12), and (M13) in the pixel (30).

[0102] In addition, although an example is shown here where all transistors have back gates, it is not limited to this, and transistors with back gates and transistors without back gates may be mixed.

[0103] (Pixel Composition Example 2-2)

[0104] An example of the case in which the transistor (M10) in the subpixel (20R) exemplified in FIG. 6 is omitted is shown in FIG. 8 (A). The configuration shown in FIG. 8 (A) corresponds to the configuration exemplified in FIG. 1.

[0105] In addition, Figure 8 (B) shows an example in which a transistor having a back gate is applied to each transistor of Figure 8 (A). Here, a transistor with a pair of gates connected to all transistors is applied. Also, as described above, the method of connecting the back gate is not limited to this. Also, as described above, transistors without a back gate and transistors having a back gate may be mixed.

[0106] (Pixel Composition Example 2-3)

[0107] An example of the case where the wiring (WX) in the subpixel (20R) exemplified in FIG. 6 is omitted is shown in FIG. 9 (A).

[0108] In Fig. 9 (A), the transistor (M14) has one of its source and drain electrically connected to the wiring (SL1).

[0109] Wiring (SL1) can serve as wiring (WX). Specifically, by making the transistor (M14) conduct, a current (or voltage) according to the gate potential of the transistor (M13) can be output to wiring (SL1). At this time, wiring (SL1) can be configured to be connected to both the driving circuit (12) and the circuit (15).

[0110] In addition, an example of the case where the transistor (M10) in (A) of Fig. 9 is omitted is shown in (B) of Fig. 9.

[0111] (Configuration Example 2-2 of a Display Device)

[0112] Although an example in which one pixel has three subpixels was shown above, an example in which one pixel has two subpixels will be explained below.

[0113] Figure 10 (A) shows an example of a 3×3 pixel arrangement method. In Figure 10 (A), pixels from row i, column j (where i and j are each independent integers greater than or equal to 1) to row i+2, column j+2 are shown.

[0114] In Fig. 10 (A), pixels (30G) and pixels (30B) are arranged alternately in the row direction and column direction. Pixel (30G) has subpixels (20R) and subpixels (20G). Pixel (30B) has subpixels (20R) and subpixels (20B).

[0115] For example, a pixel (30G) located at row i and column j is connected to a wiring (GL[i]), wiring (RS[i]), and wiring (SE[i]) extending in the row direction, and a wiring (SL1[j]), wiring (SL2[j]), and wiring (WX[j]) extending in the column direction.

[0116] An example of the arrangement method of the receiving and emitting elements (SR), the emitting element (ELG), and the emitting element (ELB) is shown in (B) of FIG. 10. The receiving and emitting elements (SR) are arranged at equal intervals in the row and column directions. In addition, the emitting elements (ELG) and the emitting elements (ELB) are arranged alternately in the row and column directions, respectively. Furthermore, the shape of each of the receiving and emitting elements (SR), the emitting element (ELG), and the emitting element (ELB) is a square shape tilted approximately 45° with respect to the arrangement direction. By doing so, the distance between adjacent elements can be increased, and the emitting element and the receiving and emitting element can be manufactured with high yield when formed separately.

[0117] An example of a circuit diagram for a pixel (30G) in row i and column j and a pixel (30B) in row i+1 and column j is shown in FIG. 11. The configuration of the subpixel (20R), subpixel (20G), and subpixel (20B) may be adapted from FIG. 6 and the like.

[0118] [Example of Operation Method 1]

[0119] An example of a driving method for a display device is described below. Here, the configuration in which one pixel has two subpixels, as exemplified in FIGS. 10 and 11, is used as an example for explanation.

[0120] In addition, the following is a display device having a configuration in which a plurality of pixels are arranged in a matrix in M ​​rows and N columns (M and N are each independently integers of 2 or more).

[0121] The operation of the display device is schematically illustrated in FIGS. 12 and 13. The operation of the display device is broadly divided into a period for displaying an image using a light-emitting element and a light-emitting element (display period), and a period for capturing an image using a light-emitting element (also called a sensor) (capturing period). The display period is the period during which image data is recorded in pixels and display based on the image data is performed. The capturing period is the period during which capturing by the light-emitting element and reading of the captured data are performed.

[0122] First, using Fig. 12, the operation during the display period will be explained.

[0123] During the display period, the recording operation of data for the pixel is repeatedly performed. During that period, the operation of the sensor is not performed (indicated as blank). Additionally, the imaging operation may be performed during the display period.

[0124] One frame of image data is recorded in a single recording operation. As shown in FIG. 12, data is recorded sequentially for pixels from the first column to the Mth column in a single recording operation (indicated as recording).

[0125] Figure 12 shows a timing chart according to the recording operation of data in row i and row i+1. Here, the potential shifts in wiring (GL[i]), wiring (GL[i+1]), wiring (RS[i]), wiring (RS[i+1]), wiring (SE), wiring (REN), wiring (VL1), wiring (SL1[j]), and wiring (SL2[j]) are shown. Here, regarding wiring (SE), wiring from the first column to the Mth column is collectively denoted as wiring (SE[1:M]). Figures 10 and 11 can be taken into account regarding the connection relationship between each wiring and each pixel.

[0126] During the recording period of the i-th row, set wiring (GL[i]) and wiring (RS[i]) to a high level potential, and set other wiring (GL) and wiring (RS) to a low level potential. Also, image data (D) on wiring (SL1[j]) R [i,j]) is supplied, and image data (D) is supplied to the wiring (SL2[j]). G [i,j]) is supplied. Also, during the recording period, a high level potential is supplied to the wiring (REN), and a potential (V0) is supplied to the wiring (VL1).

[0127] In the same way as above, recording after the i+1th row can be performed by setting the corresponding wiring (GL) and wiring (RS) to a high level potential and supplying image data to wiring (SL1) and wiring (SL2) respectively.

[0128] By performing such recording operations from the first row to the Mth row, the recording of one frame of data is completed. During the display period, the video can be displayed by repeatedly executing the above operations.

[0129] Next, using FIG. 13, the operation during the imaging period is described. Here, the case of performing an imaging operation using a global shutter method is described. In addition, the driving method of a rolling shutter method may be applied, not limited to the global shutter method.

[0130] The imaging period is divided into a period during which imaging is performed simultaneously at each pixel (referred to as imaging; hereinafter also referred to as the imaging operation period to distinguish it from the imaging period) and a period during which imaging data is read sequentially (referred to as reading). The imaging operation period is divided into an initialization period, an exposure period, and a transmission period. In addition, during the reading period, the reading of imaging data is performed for each row from the first row to the Mth row.

[0131] A timing chart during the imaging operation period and the reading period is shown in FIG. 13. Here, the potential trends are shown for wiring (TX), wiring (SE[i]), wiring (RS[i]), wiring (SE[i+1]), wiring (RS[i+1]), wiring (VL1), wiring (REN), wiring (SL[1:N]), wiring (GL[1:M]), and wiring (WX[1:N]). Here, wiring (GL) is collectively referred to as wiring (GL[1:M]), and wiring (WX) is collectively referred to as wiring (WX[1:N]). Also, wiring (SL1) and wiring (SL2), etc., are collectively referred to as wiring (SL[1:N]).

[0132] During the initialization period, the wiring (REN) is set to a low level potential. As a result, the transistor (M10) in all pixels becomes non-conductive. Therefore, the light-emitting element (SR) and the transistor (M2) can be electrically isolated.

[0133] Set the wiring (TX) and all wirings (RS) to a high level potential, and the potential (V) on wiring (VL1) RS By supplying ) to the node where the gate of the transistor (M13) is connected and the anode of the light-emitting element (SR), the potential (V) from the wiring (VL1) through the transistor (M11) and transistor (M12) is applied. RS ) is supplied. By this, the reset operation of all pixels is performed.

[0134] Next, during the exposure period, the wiring (TX) and wiring (RS) are set to a low level potential. As a result, charges corresponding to the irradiated light are accumulated in the light-emitting element (SR).

[0135] Next, the wiring (TX) is set to a high level potential during the transmission period. By doing so, the charge accumulated in the light-emitting element (SR) can be transferred to the node where the gate of the transistor (M13) is connected. After that, the wiring (TX) is set to a low level potential, thereby maintaining the potential of the node.

[0136] Subsequently, the captured data is read row by row. During the reading period, high-level potential is supplied sequentially from wiring (SE[1]) to wiring (SE[N]), thereby enabling the reading of data from all pixels. For example, in the reading of the i-th row, by setting wiring (SE[i]) to a high-level potential, the data of the i-th row (D) is read into wiring (WX[1:N]). W [i]) is output. Specifically, for a single wire (WX[j]), the data at row i and column j (D W [i,j]) is printed.

[0137] In FIG. 13, during the data reading operation of the i-th row, a high-level potential is supplied to the wire (SE[i]), and data (D) is supplied to the wire (WX[1:N]). W After [i]) is output, a high-level potential is supplied to the wiring (RS[i]). As a result, the reset potential (V) at the gate of the transistor (M13) is applied. RS Data in the supplied state is output to the wiring (WX[1:N]). The circuit part (15) to which the wiring (WX) is connected can perform Correlated Double Sampling (CDS) using these two output data and can reduce the influence of electrical characteristic deviations per pixel.

[0138] Here, a low-level potential is always supplied to the wiring (REN) during the imaging period. As a result, the receiving and emitting element (SR) and the transistor (M2) are electrically isolated, especially during the exposure and transmission periods. As a result, noise is reduced, and high-precision imaging can be performed.

[0139] In addition, during the imaging period, it is desirable for each pixel to maintain the image data recorded immediately prior (indicated as "maintained"). By doing so, when the imaging period ends, the potential of the wiring (REN) changes from a low level potential to a high level potential, thereby allowing the image corresponding to the maintained image data to be displayed immediately. Furthermore, by maintaining the image data recorded in the subpixel (20G) or subpixel (20B) during the imaging period, crosstalk noise on the anode of the light-emitting element (SR) in the subpixel (20R) can be reduced.

[0140] This concludes the explanation of Example 1 of the operation method.

[0141] [Composition Example 3]

[0142] An example of a configuration of a display device having a different configuration from the above is described below.

[0143] (Pixel Composition Example 3-1)

[0144] The pixel circuit shown in (A) of Fig. 14 has the transistor (M11) and capacitance element (C2) omitted from the configuration exemplified in Fig. 6, etc.

[0145] In (A) of FIG. 14, the other side of the source and drain of transistor (M2) is electrically connected to one side of the source and drain of transistor (M10), one side of the source and drain of transistor (M12), and the gate of transistor (M13). The other side of the source and drain of transistor (M10) is electrically connected to the anode of the light-emitting element (SR).

[0146] By configuring it in this way, the transistor (M10) can perform the function of the transistor (M11) in the configuration shown in FIG. 6, etc. Therefore, the transistor (M11) and the wiring (TX) can be omitted, and the pixel configuration can be simplified.

[0147] In addition, in the configuration exemplified in (A) of FIG. 14, the capacitance element (C1) can perform the function of the capacitance element (C2) in the configuration shown in FIG. 6, etc. That is, the capacitance element (C1) can perform the function of a holding capacitance that maintains the potential of the node to which the gate of the transistor (M13) is connected. By doing so, compared to the configuration shown in FIG. 6, etc., the capacitance element (C2) and the wiring (VCP) can be omitted, and the pixel configuration can be further simplified.

[0148] Here, wiring supplying a constant potential is not connected to the capacitance element (C1). Therefore, when performing charging or discharging on one of the pair of electrodes of the capacitance element (C1), it is desirable to supply a constant potential to the other side. Specifically, through the transistor (M1), a constant potential (e.g., potential (V)) is supplied from the wiring (SL1). off )) supplied, or through the transistor (M12) from the wiring (VL1) a constant potential (e.g., potential (V0) or potential (V RS It is desirable to supply ))

[0149] Figure 14 (B) is an example in which a transistor having a back gate is applied to each transistor in Figure 14 (A). Here, a transistor with a pair of gates connected to all transistors is applied. Also, as described above, the method of connecting the back gate is not limited to this. Also, as described above, transistors without a back gate and transistors having a back gate may be mixed.

[0150] (Pixel Composition Example 3-2)

[0151] FIG. 15 is an example of the case where the wiring (WX) is omitted from the configuration shown in FIG. 14 (A). The transistor (M14) has one of its source and drain electrically connected to the wiring (SL1). The wiring (SL1) can perform the function of the wiring (WX). By doing so, the pixel configuration can be further simplified.

[0152] (Configuration example of a display device 3)

[0153] The pixel circuits exemplified in (A), (B) of FIG. 14 and FIG. 15 can be applied to the subpixel (20R) of the display device exemplified in FIG. 5, FIG. 10 (A), etc.

[0154] An example of applying the pixel circuit exemplified in (A) of FIG. 14 to the display device of FIG. 10 is shown in FIG. 16. Here, an example of a circuit diagram is shown for a pixel (30G) in row i and column j and a pixel (30B) in row i+1 and column j, similar to FIG. 11.

[0155] [Example of Driving Method 2]

[0156] Another example of a driving method for a display device is described below. Here, the configuration illustrated in FIG. 16 is used as an example.

[0157] In addition, regarding parts that overlap with Example 1 of the above driving method, they may be referenced and explanations omitted.

[0158] For operation during the display period, the same method as the method exemplified in Example 1 of the above driving method and FIG. 12 can be applied.

[0159] The operation during the imaging period will be explained below using FIG. 17. Here, the case of performing imaging operation using the global shutter method will also be explained.

[0160] Figure 17 shows the potential trends for wiring (REN), wiring (SE[i]), wiring (RS[i]), wiring (SE[i+1]), wiring (RS[i+1]), wiring (VL1), wiring (SL1[1:N]), wiring (GL[1:M]), and wiring (WX).

[0161] During the initialization period, the wiring (REN) and all wirings (RS) are set to a high level potential. Accordingly, the potential (V) from wiring (VL1) through transistors (M12) and (M10) is applied to the node where the gate of transistor (M13) is connected and the anode of the light-emitting element (SR). RS ) is supplied.

[0162] Also, set all wiring (GL[1:M]) to a high level potential, and set the potential (V) on all wiring (SL1[1:N]). off ) supplies. Accordingly, the potential (V) from the wiring (SL1) through the transistor (M1) to the gate of the transistor (M2) off ) is supplied, and the transistor (M2) can be made non-conductive.

[0163] Next, during the exposure period, the wiring (REN), wiring (RS), wiring (GL), etc. are brought to a low level potential. As a result, charges corresponding to the irradiated light are accumulated in the light-emitting element (SR).

[0164] Next, the wiring (REN) is set to a high level potential during the transmission period. By doing so, the charge accumulated in the light-emitting element (SR) can be transmitted to the node where the gate of the transistor (M13) is connected.

[0165] At this time, if the node to which the gate of the transistor (M2) is connected is in a floating state, when the transistor (M10) is made to a conducting state after exposure, the potential of the node to which the gate of the transistor (M2) is connected may rise due to capacitive coupling by the capacitive element (C1). Therefore, as shown in FIG. 17, a high-level potential is supplied to the wiring (GL[1:M]) during the transmission period, and the potential (V) to the wiring (SL1[1:N]) off It is desirable to ensure that the transistor (M2) is definitely turned off by supplying ).

[0166] Next, image data is read for each row. The operation during the reading period can be performed by sequentially supplying a high-level potential to the wiring (SE) for each row, as described above, so that data of all pixels can be read. Additionally, by supplying a high-level potential to the wiring (RS) during the reading period of one row, two types of data may be output to the wiring (WX), and CDS may be performed in the circuit section (15).

[0167] Here, during the exposure and reading periods, a low-level potential is supplied to all wiring (GL), and the transistor (M1) becomes non-conducting. Accordingly, the gate of the transistor (M2) is at a potential (V) that causes the transistor (M2) to become non-conducting. off Since the supply is maintained, current flow to the transistor (M2) can be suppressed. Therefore, noise-reduced imaging can be performed. Also, since the transistor (M1) is in a non-conducting state at this time, the potential supplied to the wiring (SL1) is not considered (indicated as don't care).

[0168] This concludes the explanation of Example 2 of the operation method.

[0169] The configuration examples and corresponding drawings, etc. exemplified in this embodiment may be appropriately combined with other configuration examples or drawings, etc., at least a part thereof.

[0170] This embodiment may be implemented by appropriately combining at least a part thereof with other embodiments described in this specification.

[0171] (Embodiment 2)

[0172] In this embodiment, a display device of one form of the present invention is described.

[0173] A display device of one form of the present invention has a light-emitting element and a light-emitting element.

[0174] A light-emitting device can be fabricated by combining an organic EL device, which is a light-emitting device, and an organic photodiode, which is a light-receiving device. For example, a light-emitting device can be fabricated by adding an active layer of an organic photodiode to the stacked structure of an organic EL device. In addition, a light-emitting device fabricated by combining an organic EL device and an organic photodiode can suppress the increase in the film deposition process by depositing layers that can have a common configuration with the organic EL device in a single step.

[0175] For example, one of a pair of electrodes (common electrode) can be used as a layer common to both the light-emitting element and the light-emitting element. Additionally, it is preferable to use at least one of, for example, a hole injection layer, a hole transport layer, an electron transport layer, and an electron injection layer as a layer common to both the light-emitting element and the light-emitting element. Furthermore, the light-emitting element and the light-emitting element may have the same configuration except for, for example, the presence or absence of an active layer in the light-receiving element. That is, the light-emitting element can be fabricated simply by adding the active layer of the light-receiving element to the light-emitting element. By having a layer common to both the light-emitting element and the light-emitting element in this way, the number of film deposition steps and the number of masks can be reduced, thereby reducing the manufacturing process and cost of the display device. Additionally, a display device having the light-emitting element can be fabricated using existing manufacturing equipment and methods for display devices.

[0176] In addition, the layers of a light-emitting device may have different functions depending on whether the light-emitting device functions as a light-receiving device or as a light-emitting device. In this specification, components are named based on their function when the light-emitting device functions as a light-emitting device. For example, the hole injection layer functions as a hole injection layer when the light-emitting device functions as a light-emitting device, and functions as a hole transport layer when the light-emitting device functions as a light-receiving device. Similarly, the electron injection layer functions as an electron injection layer when the light-emitting device functions as a light-emitting device, and functions as an electron transport layer when the light-emitting device functions as a light-receiving device.

[0177] As such, the display device of the present embodiment has a light-emitting element and a light-emitting element in the display section. Specifically, the light-emitting element and the light-emitting element are each arranged in a matrix in the display section. Therefore, in addition to the function of displaying an image, the display section also has one or both of the imaging function and the sensing function.

[0178] The display unit can be used for image sensors, touch sensors, etc. That is, by detecting light from the display unit, it is possible to capture an image or detect the approach or contact of an object (finger, pen, etc.). In addition, the display device of the present embodiment can use a light-emitting element as a light source for the sensor. Therefore, since it is not necessary to provide a light-receiving unit and a light source separately from the display device, the number of components of the electronic device can be reduced.

[0179] In the display device of the present embodiment, when an object reflects the light emitted by the light-emitting element of the display part, the light-emitting element can detect the reflected light, so imaging, touch (contact or approach) detection, etc. are possible even in dark places.

[0180] The display device of the present embodiment has the function of displaying an image using a light-emitting element and a light-emitting element. That is, the light-emitting element and the light-emitting element function as display elements.

[0181] It is preferable to use EL devices such as OLEDs (Organic Light Emitting Diodes) and QLEDs (Quantum-dot Light Emitting Diodes) as light-emitting devices. Examples of light-emitting materials for EL devices include materials that emit fluorescence (fluorescent materials), materials that emit phosphorescence (phosphorescent materials), inorganic compounds (quantum dot materials, etc.), and materials that exhibit thermally activated delayed fluorescence (Thermally Activated Delayed Fluorescence: TADF materials). Additionally, LEDs such as micro LEDs (Light Emitting Diodes) may be used as light-emitting devices.

[0182] The display device of the present embodiment has the function of detecting light using a light-emitting element. The light-emitting element can detect light of a shorter wavelength than the light emitted by the light-emitting element itself.

[0183] When a light-emitting element is used in an image sensor, the display device of the present embodiment can capture an image using the light-emitting element. For example, the display device of the present embodiment can be used as a scanner.

[0184] For example, data such as fingerprints and palm prints can be acquired using an image sensor. That is, a biometric authentication sensor can be embedded in the display device of the present embodiment. By embedding the biometric authentication sensor in the display device, the number of electronic device components can be reduced compared to the case where the biometric authentication sensor is provided separately from the display device, thereby enabling miniaturization and weight reduction of the electronic device.

[0185] In addition, data such as the user's facial expressions, eye movements, or changes in pupil diameter can be acquired using an image sensor. By interpreting the data, physical and mental information of the user can be acquired. By changing the output content of one or both of the display and voice based on the information, the user can safely use, for example, a VR (Virtual Reality) device, an AR (Augmented Reality) device, or an MR (Mixed Reality) device.

[0186] In addition, when a light-emitting element is used in a touch sensor, the display device of the present embodiment can detect the approach or contact of an object using the light-emitting element.

[0187] A light-emitting device functions as a photoelectric conversion device that detects light incident on it and generates electric charge. The amount of electric charge generated is determined by the amount of incident light.

[0188] A light-emitting receiving element can be fabricated by adding an active layer of a light-receiving element to the configuration of the light-emitting element.

[0189] For example, the active layer of a pn-type or pin-type photodiode can be used in the light-emitting device.

[0190] In particular, it is desirable to use an active layer of an organic photodiode having a layer containing an organic compound in the light-emitting element. Organic photodiodes are easy to thin, lighten, and enlarge, and can be applied to various display devices as they offer a high degree of freedom in shape and design.

[0191] Cross-sectional views of a display device of one embodiment of the present invention are shown in FIG. 18 (A) to (D).

[0192] The display device (350A) shown in (A) of FIG. 18 has a layer (353) having a light-emitting element between a substrate (351) and a substrate (359), and a layer (357) having a light-emitting element.

[0193] The display device (350B) shown in (B) of FIG. 18 has a layer (353) having a light-emitting element, a layer (355) having a transistor, and a layer (357) having a light-emitting element between a substrate (351) and a substrate (359).

[0194] The display device (350A) and the display device (350B) have a configuration in which green (G) light and blue (B) light are emitted from a layer (357) having a light-emitting element, and red (R) light is emitted from a layer (353) having a light-emitting element. In addition, in one embodiment of the display device of the present invention, the color of the light emitted by the layer (353) having a light-emitting element is not limited to red.

[0195] The light-emitting element included in the layer (353) having the light-emitting element can detect light incident from outside the display device (350A) or the display device (350B). The light-emitting element can detect, for example, one or both of green (G) light and blue (B) light.

[0196] A display device of one embodiment of the present invention has a plurality of pixels arranged in a matrix. Each pixel has one or more subpixels. Each subpixel has one light-emitting element or one light-emitting element. For example, a configuration having three subpixels (three colors of R, G, and B, or three colors of yellow (Y), cyan (C), and magenta (M), etc.) or a configuration having four subpixels (four colors of R, G, B, and white (W), or four colors of R, G, B, and Y, etc.) may be applied to the pixel. At least one color subpixel has a light-emitting element. A light-emitting element may be provided in all pixels or in some pixels. Additionally, a single pixel may have a plurality of light-emitting elements.

[0197] The layer (355) having a transistor has, for example, a transistor electrically connected to a light-emitting element and a transistor electrically connected to a light-emitting element. The layer (355) having a transistor may further have wiring, electrodes, terminals, capacitive elements, resistive elements, etc.

[0198] A display device of one embodiment of the present invention may have a function to detect an object, such as a finger, that is in contact with the display device (Fig. 18 (C)). Or it may have a function to detect an object that is approaching (not in contact with) the display device (Fig. 18 (D)). For example, as shown in Fig. 18 (C) and (D), when a finger (352) that is in contact with or approaching the display device (350B) reflects the light emitted by the light-emitting element in the layer (357) having the light-emitting element, the light-emitting element in the layer (353) having the light-emitting element detects the reflected light. By doing so, it is possible to detect that the finger (352) is in contact with or approaching the display device (350B).

[0199] [Pixels]

[0200] Examples of pixels are shown in FIGS. 18 (E) to (G) and FIGS. 19 (A) to (D). Also, the arrangement of subpixels is not limited to the order shown. For example, the positions of subpixel (311B) and subpixel (311G) may be swapped.

[0201] The pixel shown in (E) of FIG. 18 has a stripe array applied and has a subpixel (311SR) that emits red light and has a light-receiving function, a subpixel (311G) that emits green light, and a subpixel (311B) that emits blue light. In a display device in which the pixel consists of three subpixels of R, G, and B, by changing the light-emitting element used in the R subpixel to a light-emitting element, a display device having a light-receiving function in the pixel can be manufactured.

[0202] The pixel shown in (F) of FIG. 18 has a matrix array applied and has a subpixel (311SR) that emits red light and has a light-receiving function, a subpixel (311G) that emits green light, a subpixel (311B) that emits blue light, and a subpixel (311W) that emits white light. Even in a display device in which the pixel consists of four subpixels of R, G, B, and W, by changing the light-emitting element used in the R subpixel to a light-emitting element, a display device having a light-receiving function in the pixel can be manufactured.

[0203] The pixel shown in FIG. 18 (G) has a Pentile array applied and has subpixels that emit two colors of light with different combinations depending on the pixel. The upper left pixel and the lower right pixel shown in FIG. 18 (G) emit red light and have a subpixel (311SR) that has a light-receiving function and a subpixel (311G) that emits green light. The lower left pixel and the upper right pixel shown in FIG. 18 (G) have a subpixel (311G) that emits green light and a subpixel (311B) that emits blue light. In addition, the shape of the subpixel shown in FIG. 18 (G) represents the upper surface shape of the light-emitting element or light-emitting element having said subpixel.

[0204] The pixel shown in (A) of FIG. 19 has a subpixel (311SR) that emits red light and has a light-receiving function, a subpixel (311G) that emits green light, and a subpixel (311B) that emits blue light. The subpixel (311SR) is placed in a different column from the subpixel (311G) and the subpixel (311B). The subpixel (311G) and the subpixel (311B) are alternately placed in the same column, with one side provided in an odd row and the other side provided in an even row. Additionally, the subpixel placed in a different column from the subpixels of other colors is not limited to red (R) and may be green (G) or blue (B).

[0205] In FIG. 19 (B), two pixels are shown, and one pixel is composed of three subpixels enclosed by a dotted line. The pixel shown in FIG. 19 (B) has a subpixel (311SR) that displays red light and has a light receiving function, a subpixel (311G) that displays green light, and a subpixel (311B) that displays blue light. In the left pixel shown in FIG. 19 (B), the subpixel (311G) is placed in the same row as the subpixel (311SR), and the subpixel (311B) is placed in the same column as the subpixel (311SR). In the right pixel shown in FIG. 19 (B), the subpixel (311G) is placed in the same row as the subpixel (311SR), and the subpixel (311B) is placed in the same column as the subpixel (311G). In the pixel layout shown in (B) of FIG. 19, subpixels (311SR), subpixels (311G), and subpixels (311B) are repeatedly arranged in either the odd row or the even row, and in each column, subpixels of different colors are arranged in the odd row and the even row.

[0206] Fig. 19 (C) is a modified example of the pixel array shown in Fig. 18 (G). The top left and bottom right pixels shown in Fig. 19 (C) have a subpixel (311SR) that has a light receiving function and a subpixel (311G) that has a red light receiving function and a subpixel (311B) that has a green light receiving function. The bottom left and top right pixels shown in Fig. 19 (C) have a subpixel (311SR) that has a light receiving function and a subpixel (311B) that has a blue light receiving function.

[0207] In FIG. 18 (G), a subpixel (311G) that emits green light is provided for each pixel. On the other hand, in FIG. 19 (C), a subpixel (311SR) that emits red light and has a light-receiving function is provided for each pixel. Since a subpixel with a light-receiving function is provided for each pixel, the configuration shown in FIG. 19 (C) can perform imaging with higher precision compared to the configuration shown in FIG. 18 (G). This allows for, for example, an increase in the precision of biometric authentication.

[0208] In addition, the top surface shape of the light-emitting element and the light-emitting element is not particularly limited and can be circular, elliptical, polygonal, or a polygon with rounded corners. Regarding the top surface shape of the light-emitting element of the subpixel (311G), an example of a circular shape is shown in (G) of FIG. 18, and an example of a square shape is shown in (C) of FIG. 19. The top surface shapes of the light-emitting element and the light-emitting element of each color may be different from each other, or may be the same in some or all colors.

[0209] In addition, the aperture ratios of the subpixels of each color may be different from each other, or may be the same for some or all colors. For example, the aperture ratio of the subpixel provided to each pixel (subpixel (311G) in (G) of FIG. 18, subpixel (311SR) in (C) of FIG. 19)) may be smaller than the aperture ratio of the subpixel of another color.

[0210] Fig. 19 (D) is a modified example of the pixel array shown in Fig. 19 (C). Specifically, the configuration of Fig. 19 (D) is obtained by rotating the configuration of Fig. 19 (C) by 45°. Although Fig. 19 (C) was described as having one pixel composed of two subpixels, it can also be considered as having one pixel composed of four subpixels as shown in Fig. 19 (D).

[0211] In Fig. 19 (D), a pixel is described as being composed of four subpixels enclosed by dotted lines. A single pixel has two subpixels (311SR), one subpixel (311G), and one subpixel (311B). In this way, by having multiple subpixels that have a light-receiving function, a single pixel can be captured with high precision. Therefore, the precision of biometric authentication can be increased. For example, the precision of the image can be made √2 times the precision of the display.

[0212] A display device having the configuration shown in (C) or (D) of FIG. 19 has p first light-emitting elements (where p is an integer greater than or equal to 2), q second light-emitting elements (where q is an integer greater than or equal to 2), and r light-emitting receiving elements (where r is an integer greater than p and greater than q). p and r satisfy r = 2p. Also, p, q, and r satisfy r = p + q. One of the first light-emitting elements and the second light-emitting elements emits green light, and the other of the first light-emitting elements and the second light-emitting elements emits blue light. The light-emitting receiving element emits red light and has a light-receiving function.

[0213] For example, when performing touch detection using a light-emitting element, it is desirable that the light emitted from the light source be difficult for the user to see. Since blue light has lower visibility than green light, it is desirable to use a light-emitting element that emits blue light as the light source. Therefore, it is desirable for the light-emitting element to have the function of receiving blue light.

[0214] As described above, a display device of one form of the present invention may apply various arrays of pixels.

[0215] Since the display device of the present embodiment does not require changing the pixel array to provide a light receiving function to the pixels, it is possible to provide one or both of the imaging function and the sensing function to the display unit without reducing the aperture ratio and the precision.

[0216] [Light-emitting diode]

[0217] Examples of stacked structures of light-emitting and receiving devices are shown in (A) to (E) of FIG. 20.

[0218] A light-emitting device has at least an active layer and a light-emitting layer between a pair of electrodes.

[0219] The receiving and emitting device may further have a layer other than the active layer and the emitting layer, comprising a material with high hole injection, a material with high hole transport, a material with high hole blocking, a material with high electron transport, a material with high electron injection, a material with high electron blocking, or a bipolar material (a material with high electron transport and hole transport).

[0220] The receiving and emitting elements shown in (A) to (C) of FIG. 20 each have a first electrode (180), a hole injection layer (181), a hole transport layer (182), an active layer (183), a emitting layer (193), an electron transport layer (184), an electron injection layer (185), and a second electrode (189).

[0221] In addition, the light-emitting elements shown in (A) to (C) of FIG. 20 can each be configured by adding an active layer (183) to the light-emitting element. Therefore, by simply adding a process of forming an active layer (183) to the manufacturing process of the light-emitting element, the light-emitting element can be formed in parallel with the formation of the light-emitting element. Furthermore, the light-emitting element and the light-emitting element can be formed on the same substrate. Thus, one or both of the imaging function and the sensing function can be provided to the display unit without significantly increasing the manufacturing process.

[0222] The stacking order of the light-emitting layer (193) and the active layer (183) is not limited. In FIG. 20 (A), an example is shown in which the active layer (183) is provided on the hole transport layer (182) and the light-emitting layer (193) is provided on the active layer (183). Also, in FIG. 20 (B), an example is shown in which the light-emitting layer (193) is provided on the hole transport layer (182) and the active layer (183) is provided on the light-emitting layer (193). Additionally, the active layer (183) and the light-emitting layer (193) may be in contact with each other as shown in FIG. 20 (A) and (B).

[0223] As shown in (C) of FIG. 20, it is preferable to have a buffer layer sandwiched between the active layer (183) and the light-emitting layer (193). As the buffer layer, at least one of a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a hole block layer, and an electron block layer may be used. FIG. 20 (C) shows an example in which a hole transport layer (182) is used as the buffer layer.

[0224] By providing a buffer layer between the active layer (183) and the light-emitting layer (193), the transfer of excitation energy from the light-emitting layer (193) to the active layer (183) can be suppressed. Additionally, the optical path length (cavity length) of the micro-resonance (microcavity) structure can be adjusted using the buffer layer. Thus, a high luminous efficiency can be obtained in a light-emitting device having a buffer layer between the active layer (183) and the light-emitting layer (193).

[0225] The light-emitting device shown in (D) of FIG. 20 differs from the light-emitting devices shown in (A) and (C) of FIG. 20 in that it does not have a hole transport layer (182). The light-emitting device does not need to have at least one of a hole injection layer (181), a hole transport layer (182), an electron transport layer (184), and an electron injection layer (185). Additionally, the light-emitting device may have other functional layers, such as a hole block layer and an electron block layer.

[0226] The light-emitting element shown in (E) of FIG. 20 is different from the light-emitting element shown in (A) to (C) of FIG. 20 in that it does not have an active layer (183) and a light-emitting layer (193), but has a layer (186) that serves as both a light-emitting layer and an active layer.

[0227] As a layer (186) that serves as both a light-emitting layer and an active layer, for example, a layer comprising three materials such as an n-type semiconductor that can be used in the active layer (183), a p-type semiconductor that can be used in the active layer (183), and a light-emitting material that can be used in the light-emitting layer (193) may be used.

[0228] In addition, it is desirable that the absorption band on the lowest energy side of the absorption spectrum of a mixed material of n-type and p-type semiconductors and the maximum peak of the emission spectrum (PL spectrum) of the emitting material do not overlap with each other, and it is even more desirable that they are sufficiently separated.

[0229] In a light-emitting device, a conductive film that transmits visible light is used on the electrode on the side that extracts light. Additionally, it is preferable to use a conductive film that reflects visible light on the electrode on the side that does not extract light.

[0230] When driving a light-emitting device as a light-emitting device, the hole injection layer is a layer that injects holes from the anode into the hole transport layer. The hole injection layer is a layer containing a material with high hole injection properties. As a material with high hole injection properties, a composite material containing a hole transport material and an acceptor material (electron accepting material), or an aromatic amine compound (a compound having an aromatic amine backbone) can be used.

[0231] When driving a light-emitting device as a light-emitting device, the hole transport layer is a layer that transports holes injected from the anode by the hole injection layer to the light-emitting layer. When driving a light-emitting device as a light-receiving device, the hole transport layer is a layer that transports holes generated based on light incident from the active layer to the anode. The hole transport layer is a layer containing a hole-transporting material. As for the hole-transporting material, 1×10⁻⁶ -6 cm 2 A material having a hole mobility of / Vs or higher is preferred. Additionally, materials other than these may be used as long as they have higher hole transport than electron transport. As for hole transport materials, materials with high hole transport, such as π-electron excess heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.) and aromatic amine compounds, are preferred.

[0232] When driving a light-emitting device as a light-emitting device, the electron transport layer is a layer that transports electrons injected from the cathode by the electron injection layer to the light-emitting layer. When driving a light-emitting device as a light-receiving device, the electron transport layer is a layer that transports electrons generated based on light incident from the active layer to the cathode. The electron transport layer is a layer containing an electron transportable material. As for the electron transportable material, 1×10 -6 cm 2Materials having electron mobility greater than or equal to / Vs are preferred. Additionally, materials other than these may be used as long as they have higher electron transport than hole transport. As electron transport materials, materials with high electron transport can be used, such as metal complexes having a quinoline backbone, metal complexes having a benzoquinoline backbone, metal complexes having an oxazole backbone, metal complexes having a thiazole backbone, etc., as well as oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives having a quinoline ligand, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other π-electron-deficient heteroaromatic compounds including nitrogen-containing heteroaromatic compounds.

[0233] When driving a light-emitting device as a light-emitting device, the electron injection layer is a layer that injects electrons from the cathode into the electron transport layer. The electron injection layer is a layer containing a material with high electron injection properties. Alkali metals, alkaline earth metals, or compounds thereof may be used as materials with high electron injection properties. As materials with high electron injection properties, composite materials containing an electron transport material and a donor material (electron-donating material) may also be used.

[0234] The light-emitting layer (193) is a layer containing a light-emitting material. The light-emitting layer (193) may have one or more types of light-emitting materials. As the light-emitting material, a material that emits a light-emitting color such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red is appropriately used. In addition, a material that emits near-infrared light may be used as the light-emitting material.

[0235] Examples of luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, and quantum dot materials.

[0236] Examples of fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, naphthalene derivatives, etc.

[0237] Examples of phosphorescent materials include organometallic complexes having a 4H-triazole backbone, a 1H-triazole backbone, an imidazole backbone, a pyrimidine backbone, a pyrazine backbone, or a pyridine backbone (especially iridium complexes), organometallic complexes having a phenylpyridine derivative having an electron-withdrawing group as a ligand (especially iridium complexes), platinum complexes, rare earth metal complexes, etc.

[0238] The light-emitting layer (193) may have one or more types of organic compounds (host material, assist material, etc.) in addition to the light-emitting material (guest material). As one or more types of organic compounds, either or both of hole-transporting materials and electron-transporting materials may be used. Additionally, as one or more types of organic compounds, a positive material or a TADF material may be used.

[0239] The light-emitting layer (193) preferably has, for example, a phosphorescent material and a hole-transporting material and an electron-transporting material, which are combinations that facilitate the formation of an excited composite. By configuring it in this way, light emission using Exciplex-Triplet Energy Transfer (ExTET), which is energy transfer from the excited composite to the light-emitting material (phosphorescent material), can be efficiently obtained. By selecting a combination that forms an excited composite that exhibits light emission overlapping with the wavelength of the absorption band on the lowest energy side of the light-emitting material, energy is transferred smoothly, allowing for efficient light emission. With this configuration, high efficiency, low-voltage operation, and a long lifespan of the light-emitting device can be realized simultaneously.

[0240] As a combination of materials forming an excited complex, it is desirable that the HOMO level (highest occupied molecular orbital level) of the hole-transporting material is greater than or equal to the HOMO level of the electron-transporting material. It is also desirable that the LUMO level (lowest unoccupied molecular orbital level) of the hole-transporting material is greater than or equal to the LUMO level of the electron-transporting material. The LUMO and HOMO levels of the materials can be derived from the electrochemical properties (reduction potential and oxidation potential) of the materials measured by cyclic voltammetry (CV) measurements.

[0241] The formation of an excited complex can be confirmed by comparing, for example, the emission spectrum of a hole-transporting material, the emission spectrum of an electron-transporting material, and the emission spectrum of a mixed film of these materials, and observing the phenomenon in which the emission spectrum of the mixed film shifts toward the longer wavelength side (or has a new peak on the longer wavelength side) compared to the emission spectrum of each material. Alternatively, it can be confirmed by comparing the transient photoluminescence (PL) of the hole-transporting material, the transient PL of the electron-transporting material, and the transient PL of the mixed film of these materials, and observing differences in transient response, such as the transient PL lifetime of the mixed film having a longer lifetime component or a larger proportion of the delay component than the transient PL lifetime of each material. Furthermore, the aforementioned transient PL may be read as transient electroluminescence (EL). That is, the formation of an excited complex can be confirmed by comparing the transient EL of a hole-transporting material, the transient EL of an electron-transporting material, and the transient EL of a film of the same, and observing the difference in transient response.

[0242] The active layer (183) includes a semiconductor. Examples of the semiconductor include inorganic semiconductors such as silicon and organic semiconductors containing organic compounds. In this embodiment, an example is shown of using an organic semiconductor as the semiconductor of the active layer. Using an organic semiconductor is preferable because it allows the light-emitting layer (193) and the active layer (183) to be formed by the same method (e.g., vacuum deposition), thereby enabling the manufacturing apparatus to be standardized.

[0243] As an n-type semiconductor material having an active layer (183), fullerene (e.g., C 60 , C 70 Examples of electron-accepting organic semiconductor materials include fullerene derivatives, etc. Fullerenes have a soccer ball-like shape, and this shape is energetically stable. Fullerenes have deep (low) HOMO and LUMO levels. Because fullerenes have deep LUMO levels, their electron acceptance is very high. Generally, electron donorability increases when π-electron conjugation (resonance) spreads in a planar manner, as in benzene; however, because fullerenes have a spherical shape, electron acceptance remains high despite the significant spread of π-electrons. High electron acceptance is beneficial for photodetectors because charge separation occurs at high speed and efficiently. C 60 , C 70 Both have broad absorption bands in the visible light region, especially C 70 C 60 Compared to that, the π-electron conjugate system is large and has a wide absorption band even in the long wavelength region, so it is desirable.

[0244] In addition, as materials for n-type semiconductors, metal complexes having a quinoline backbone, metal complexes having a benzoquinoline backbone, metal complexes having an oxazole backbone, metal complexes having a thiazole backbone, oxadiazole derivatives, triazole derivatives, imidazole derivatives, oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, naphthalene derivatives, anthracene derivatives, coumarin derivatives, rhodamine derivatives, triazine derivatives, quinone derivatives, etc.

[0245] As materials for the p-type semiconductor of the active layer (183), electron-donating organic semiconductor materials such as copper (II) phthalocyanine (CuPc), tetraphenyldibenzoperiflanthene (DBP), zinc phthalocyanine (ZnPc), tin phthalocyanine (SnPc), and quinacridone may be used.

[0246] In addition, carbazole derivatives, thiophene derivatives, furan derivatives, aromatic amine compounds, etc. can be used as materials for p-type semiconductors. In addition, naphthalene derivatives, anthracene derivatives, pyrene derivatives, triphenylene derivatives, fluorene derivatives, pyrrole derivatives, benzofuran derivatives, benzothiophene derivatives, indole derivatives, dibenzofuran derivatives, dibenzothiophene derivatives, indolocarbazole derivatives, porphyrin derivatives, phthalocyanine derivatives, naphthalocyanine derivatives, quinacridone derivatives, polyphenylenevinylene derivatives, polyparaphenylene derivatives, polyfluorene derivatives, polyvinylcarbazole derivatives, polythiophene derivatives, etc.

[0247] It is desirable that the HOMO level of the electron-donating organic semiconductor material is shallower (higher) than the HOMO level of the electron-accepting organic semiconductor material. It is also desirable that the LUMO level of the electron-donating organic semiconductor material is shallower (higher) than the LUMO level of the electron-accepting organic semiconductor material.

[0248] It is desirable to use spherical fullerenes as electron-accepting organic semiconductor materials and organic semiconductor materials with a near-planar shape as electron-donating organic semiconductor materials. Molecules of similar shapes tend to aggregate easily, and when molecules of the same type aggregate, carrier transport can be enhanced because the energy levels of their molecular orbitals are close.

[0249] For example, it is preferable that the active layer (183) be formed by co-depositing an n-type semiconductor and a p-type semiconductor.

[0250] The layer (186) serving as both a light-emitting layer and an active layer is preferably formed using the light-emitting material, n-type semiconductor, and p-type semiconductor described above.

[0251] The hole injection layer (181), hole transport layer (182), active layer (183), light-emitting layer (193), electron transport layer (184), electron injection layer (185), and layer (186) that serves as both the light-emitting layer and the active layer may use either low-molecular-weight compounds or high-molecular-weight compounds, and may also include inorganic compounds. Each layer can be formed by a deposition method (including vacuum deposition), a transfer method, a printing method, an inkjet method, a coating method, etc.

[0252] The detailed configuration of the receiving and emitting element and the emitting element of a display device of one embodiment of the present invention will be explained below using FIGS. 21 to 23.

[0253] A display device of one embodiment of the present invention may be any of a top emission type that emits light in a direction opposite to that of a substrate on which a light-emitting element is formed, a bottom emission type that emits light toward the substrate on which a light-emitting element is formed, and a dual emission type that emits light on both sides.

[0254] FIGS. 21 to 23 describe a top emission type display device as an example.

[0255] [Composition Example 1]

[0256] The display device shown in (A) and (B) of FIG. 21 has a light-emitting element (347B) that emits blue (B) light through a layer (355) having a transistor on a substrate (151), a light-emitting element (347G) that emits green (G) light, and a light-emitting element (347SR) that emits red (R) light and has a light-receiving function.

[0257] FIG. 21 (A) shows a case where the receiving and emitting element (347SR) functions as a light-emitting element. FIG. 21 (A) shows an example where the light-emitting element (347B) emits blue light, the light-emitting element (347G) emits green light, and the receiving and emitting element (347SR) emits red light.

[0258] Figure 21 (B) shows a case where the light-emitting element (347SR) functions as a light-receiving element. Figure 21 (B) shows an example where the light-emitting element (347SR) detects blue light emitted by the light-emitting element (347B) and green light emitted by the light-emitting element (347G).

[0259] The light-emitting element (347B), the light-emitting element (347G), and the light-emitting element (347SR) each have a pixel electrode (191) and a common electrode (115). In this embodiment, an example is given in which the pixel electrode (191) functions as an anode and the common electrode (115) functions as a cathode.

[0260] In this embodiment, just like with the light-emitting element, the pixel electrode (191) functions as the positive electrode and the common electrode (115) functions as the negative electrode. That is, the light-emitting element (347SR) is driven by applying a reverse bias between the pixel electrode (191) and the common electrode (115) to detect light incident on the light-emitting element (347SR), generate charge, and extract it as current.

[0261] The common electrode (115) is used in common with the light-emitting element (347B), the light-emitting element (347G), and the light-emitting element (347SR).

[0262] The materials and film thickness of the pair of electrodes of the light-emitting element (347B), light-emitting element (347G), and light-emitting element (347SR) can be made the same. This makes it possible to reduce the manufacturing cost of the display device and simplify the manufacturing process.

[0263] The configuration of the display device shown in (A) and (B) of FIG. 21 will be explained in detail.

[0264] The light-emitting element (347B) has a buffer layer (192B), a light-emitting layer (193B), and a buffer layer (194B) in that order on the pixel electrode (191). The light-emitting layer (193B) has a light-emitting material that emits blue light. The light-emitting element (347B) has the function of emitting blue light.

[0265] The light-emitting element (347G) has a buffer layer (192G), a light-emitting layer (193G), and a buffer layer (194G) in that order on the pixel electrode (191). The light-emitting layer (193G) has a light-emitting material that emits green light. The light-emitting element (347G) has the function of emitting green light.

[0266] The receiving and emitting element (347SR) has a buffer layer (192R), an active layer (183), a emitting layer (193R), and a buffer layer (194R) in that order on the pixel electrode (191). The emitting layer (193R) has a emitting material that emits red light. The active layer (183) has an organic compound that absorbs light of shorter wavelengths than red light (e.g., one or both of green light and blue light). Additionally, the active layer (183) may use an organic compound that absorbs not only visible light but also ultraviolet light. The receiving and emitting element (347SR) has the function of emitting red light. The receiving and emitting element (347SR) has the function of detecting light emission from at least one of the emitting element (347G) and the emitting element (347B), and it is preferable that it has the function of detecting light emission from both.

[0267] It is preferable that the active layer (183) has an organic compound that is difficult to absorb red light and absorbs light of a shorter wavelength than red light. Accordingly, the light-emitting element (347SR) can have the function of efficiently emitting red light and the function of detecting light of a shorter wavelength than red light with high precision.

[0268] The pixel electrode (191), buffer layer (192R), buffer layer (192G), buffer layer (192B), active layer (183), light-emitting layer (193R), light-emitting layer (193G), light-emitting layer (193B), buffer layer (194R), buffer layer (194G), buffer layer (194B), and common electrode (115) may each have a single-layer structure or a stacked structure.

[0269] In the display device shown in (A) and (B) of FIG. 21, the buffer layer, active layer, and light-emitting layer are layers formed separately for each device.

[0270] The buffer layer (192R), buffer layer (192G), and buffer layer (192B) may each have one or both of a hole injection layer and a hole transport layer. Additionally, the buffer layer (192R), buffer layer (192G), and buffer layer (192B) may have an electron block layer. The buffer layer (194B), buffer layer (194G), and buffer layer (194R) may each have one or both of an electron injection layer and an electron transport layer. Additionally, the buffer layer (194R), buffer layer (194G), and buffer layer (194B) may have a hole block layer. Furthermore, regarding the materials of each layer constituting the light-emitting element, one may refer to the description of each layer constituting the light-emitting element described above.

[0271] [Composition Example 2]

[0272] As shown in (A) and (B) of FIG. 22, the light-emitting element (347B), the light-emitting element (347G), and the light-emitting element (347SR) may have a common layer between a pair of electrodes. By doing so, the light-emitting element can be embedded in the display device without significantly increasing the manufacturing process.

[0273] The light-emitting element (347B), light-emitting element (347G), and light-emitting element (347SR) shown in (A) of FIG. 22 have a common layer (112) and a common layer (114) in addition to the configuration shown in (A) and (B) of FIG. 21.

[0274] The light-emitting element (347B), light-emitting element (347G), and light-emitting element (347SR) shown in (B) of FIG. 22 differ from the configuration shown in (A) and (B) of FIG. 21 in that they do not have buffer layers (192R), buffer layers (192G), buffer layers (192B), buffer layers (194R), buffer layers (194G), and buffer layers (194B), but have a common layer (112) and a common layer (114).

[0275] The common layer (112) may have one or both of a hole injection layer and a hole transport layer. The common layer (114) may have one or both of an electron injection layer and an electron transport layer.

[0276] The common layer (112) and the common layer (114) may each have a single-layer structure or a stacked structure.

[0277] [Composition Example 3]

[0278] The display device shown in (A) of FIG. 23 is an example in which the stacked structure shown in (C) of FIG. 20 is applied to the light-emitting element (347SR).

[0279] The receiving and emitting element (347SR) has a hole injection layer (181), an active layer (183), a hole transport layer (182R), a light-emitting layer (193R), an electron transport layer (184), an electron injection layer (185), and a common electrode (115) in this order on the pixel electrode (191).

[0280] The hole injection layer (181), electron transport layer (184), electron injection layer (185), and common electrode (115) are layers common to the light-emitting element (347G) and the light-emitting element (347B).

[0281] The light-emitting element (347G) has a hole injection layer (181), a hole transport layer (182G), a light-emitting layer (193G), an electron transport layer (184), an electron injection layer (185), and a common electrode (115) in this order on the pixel electrode (191).

[0282] The light-emitting element (347B) has a hole injection layer (181), a hole transport layer (182B), a light-emitting layer (193B), an electron transport layer (184), an electron injection layer (185), and a common electrode (115) in this order on the pixel electrode (191).

[0283] It is preferable that a microcavity structure be applied to the light-emitting element of the display device of the present embodiment. Accordingly, it is preferable that one of the pair of electrodes of the light-emitting element is an electrode having transmittance and reflectivity to visible light (a semi-transparent / semi-reflective electrode), and the other is an electrode having reflectivity to visible light (a reflective electrode). By having a microcavity structure, the light emitted from the light-emitting layer is resonated between the two electrodes, thereby strengthening the light emitted from the light-emitting element.

[0284] In addition, the translucent and semi-reflective electrodes may be formed as a laminated structure of a reflective electrode and an electrode that is transparent to visible light (also referred to as a transparent electrode). In the present specification and other sources, the reflective electrode functioning as part of the translucent and semi-reflective electrode is described as a pixel electrode or a common electrode, and the transparent electrode is described as an optical adjustment layer; however, there are cases where the transparent electrode (optical adjustment layer) can also be said to have the function of a pixel electrode or a common electrode.

[0285] The light transmittance of the transparent electrode shall be 40% or higher. For example, it is preferable to use electrodes in the light-emitting device in which the transmittance of visible light (light with a wavelength of 400 nm or higher and less than 750 nm) and near-infrared light (light with a wavelength of 750 nm or higher and less than 1300 nm), respectively, is 40% or higher. In addition, the reflectance of visible light and near-infrared light, respectively, of the semi-transparent and semi-reflective electrodes shall be 10% or higher and 95% or lower, preferably 30% or higher and 80% or lower. The reflectance of visible light and near-infrared light, respectively, of the reflective electrodes shall be 40% or higher and 100% or lower, preferably 70% or higher and 100% or lower. Furthermore, the resistivity of these electrodes shall be 1×10⁻⁶ -2 It is desirable that it be Ωcm or less.

[0286] The hole transport layer (182B), hole transport layer (182G), and hole transport layer (182R) may each function as an optical adjustment layer. Specifically, it is preferable for the light-emitting element (347B) to adjust the film thickness of the hole transport layer (182B) so that the optical distance between a pair of electrodes becomes an optical distance that strengthens blue light. Likewise, it is preferable for the light-emitting element (347G) to adjust the film thickness of the hole transport layer (182G) so that the optical distance between a pair of electrodes becomes an optical distance that strengthens green light. In addition, it is preferable for the light-emitting element (347SR) to adjust the film thickness of the hole transport layer (182R) so that the optical distance between a pair of electrodes becomes an optical distance that strengthens red light. The layer used as an optical adjustment layer is not limited to the hole transport layer. Also, in the case where the semi-transparent / semi-reflective electrode is a stacked structure of a reflective electrode and a transparent electrode, the optical distance between a pair of electrodes refers to the optical distance between a pair of reflective electrodes.

[0287] [Composition Example 4]

[0288] The display device shown in (B) of FIG. 23 is an example in which the stacked structure shown in (D) of FIG. 20 is applied to the light-emitting element (347SR).

[0289] The receiving and emitting element (347SR) has a hole injection layer (181), an active layer (183), a light-emitting layer (193R), an electron transport layer (184), an electron injection layer (185), and a common electrode (115) in this order on the pixel electrode (191).

[0290] The hole injection layer (181), electron transport layer (184), electron injection layer (185), and common electrode (115) are layers common to the light-emitting element (347G) and the light-emitting element (347B).

[0291] The light-emitting element (347G) has a hole injection layer (181), a hole transport layer (182G), a light-emitting layer (193G), an electron transport layer (184), an electron injection layer (185), and a common electrode (115) in this order on the pixel electrode (191).

[0292] The light-emitting element (347B) has a hole injection layer (181), a hole transport layer (182B), a light-emitting layer (193B), an electron transport layer (184), an electron injection layer (185), and a common electrode (115) in this order on the pixel electrode (191).

[0293] The hole transport layer is provided to the light-emitting element (347G) and the light-emitting element (347B), but is not provided to the light-emitting element (347SR). In this way, in addition to the active layer and the light-emitting layer, there may also be a layer provided to only one of the light-emitting element and the light-emitting element.

[0294] A detailed configuration of a display device of one embodiment of the present invention will be described below using FIGS. 24 to 29.

[0295] [Display device (310A)]

[0296] Cross-sectional views of the display device (310A) are shown in (A) and (B) of FIG. 24.

[0297] The display device (310A) has a light-emitting element (190B), a light-emitting element (190G), and a light-emitting element (190SR).

[0298] The light-emitting element (190B) has a pixel electrode (191), a buffer layer (192B), a light-emitting layer (193B), a buffer layer (194B), and a common electrode (115). The light-emitting element (190B) has the function of emitting blue light (321B).

[0299] The light-emitting element (190G) has a pixel electrode (191), a buffer layer (192G), a light-emitting layer (193G), a buffer layer (194G), and a common electrode (115). The light-emitting element (190G) has the function of emitting green light (321G).

[0300] The receiving and emitting element (190SR) has a pixel electrode (191), a buffer layer (192R), an active layer (183), a light-emitting layer (193R), a buffer layer (194R), and a common electrode (115). The receiving and emitting element (190SR) has the function of emitting red light (321R) and the function of detecting light (322).

[0301] FIG. 24 (A) shows a case where the receiving and emitting element (190SR) functions as a light-emitting element. FIG. 24 (A) shows an example where the light-emitting element (190B) emits blue light, the light-emitting element (190G) emits green light, and the receiving and emitting element (190SR) emits red light.

[0302] Figure 24 (B) shows a case where the light-emitting element (190SR) functions as a light-receiving element. Figure 24 (B) shows an example where the light-emitting element (190SR) detects blue light emitted by the light-emitting element (190B) and green light emitted by the light-emitting element (190G).

[0303] The pixel electrode (191) is positioned on the insulating layer (214). The ends of the pixel electrode (191) are covered by a partition (216). Two adjacent pixel electrodes (191) are electrically insulated from each other by the partition (216) (also referred to as being "electrically separated").

[0304] An organic insulating film is suitable as the barrier (216). Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins. The barrier (216) is a layer that transmits visible light. Instead of the barrier (216), a barrier that blocks visible light may be provided.

[0305] The display device (310A) has a light-emitting element (190SR), a light-emitting element (190G), a light-emitting element (190B), and a transistor (342), etc., between a pair of substrates (substrate (151) and substrate (152)).

[0306] The light-emitting element (190SR) has the function of detecting light. Specifically, the light-emitting element (190SR) is a photoelectric conversion element that receives light (322) incident from outside the display device (310A) and converts it into an electrical signal. The light (322) may be light reflected from an object by the light emitted by one or both of the light-emitting element (190G) and the light-emitting element (190B). Additionally, the light (322) may be incident on the light-emitting element (190SR) through a lens.

[0307] The light-emitting element (190G) and the light-emitting element (190B) have the function of emitting visible light. Specifically, the light-emitting element (190G) and the light-emitting element (190B) are electroluminescent elements that emit light toward the substrate (152) by applying a voltage between the pixel electrode (191) and the common electrode (115) (see light (321G), light (321B)).

[0308] The buffer layer (192) (buffer layer (192R), buffer layer (192G), buffer layer (192B)), light-emitting layer (193) (light-emitting layer (193R), light-emitting layer (193G), light-emitting layer (193B)), and buffer layer (194) (buffer layer (194R), buffer layer (194G), buffer layer (194B)) may also be referred to as an organic layer (a layer containing an organic compound) or an EL layer. It is preferable that the pixel electrode (191) has the function of reflecting visible light. The common electrode (115) has the function of transmitting visible light.

[0309] The pixel electrode (191) is electrically connected to the source or drain of the transistor (342) through an opening provided in the insulating layer (214). The transistor (342) has the function of controlling the driving of a light-emitting element or a light-emitting element.

[0310] It is preferable that at least a portion of the circuit electrically connected to the receiving and emitting element (190SR) be formed using the same material and the same process as the circuit electrically connected to the emitting element (190G) and the emitting element (190B). By doing so, the thickness of the display device can be reduced and the manufacturing process can be simplified compared to the case where the two circuits are formed separately.

[0311] It is preferable that the receiving light-emitting element (190SR), the light-emitting element (190G), and the light-emitting element (190B) are each covered with a protective layer (195). In the case of (A) of FIG. 24, the protective layer (195) is provided in contact with the common electrode (115). By providing the protective layer (195), the entry of impurities into the receiving light-emitting element (190SR) and the light-emitting elements of each color is suppressed, and the reliability of the receiving light-emitting element (190SR) and the light-emitting elements of each color can be increased. In addition, the protective layer (195) and the substrate (152) are bonded by an adhesive layer (142).

[0312] A light-blocking layer (BM) is provided on the side of the substrate (152) that is on the side of the substrate (151). The light-blocking layer (BM) has openings at positions overlapping with the light-emitting element (190G) and the light-emitting element (190B), and at positions overlapping with the light-emitting element (190SR). Furthermore, in the present specification, the position overlapping with the light-emitting element (190G) or the light-emitting element (190B) specifically refers to a position overlapping with the light-emitting region of the light-emitting element (190G) or the light-emitting element (190B). Likewise, the position overlapping with the light-emitting element (190SR) specifically refers to a position overlapping with the light-emitting region and the light-receiving region of the light-emitting element (190SR).

[0313] As shown in (B) of FIG. 24, the light-emitting element (190SR) can detect light that is reflected by an object from the light-emitting element (190G) or the light-emitting element (190B). However, there are cases where the light from the light-emitting element (190G) or the light-emitting element (190B) is reflected within the display device (310A) and incident on the light-emitting element (190SR) without passing through the object. A light-blocking layer (BM) can suppress the influence of such stray light. For example, if a light-blocking layer (BM) is not provided, the light (323) emitted by the light-emitting element (190G) is reflected from the substrate (152), and reflected light (324) is incident on the light-emitting element (190SR). By providing a light-blocking layer (BM), the incident of reflected light (324) on the light-emitting element (190SR) can be suppressed. By doing so, noise can be reduced and the sensitivity of the sensor using the light-emitting element (190SR) can be increased.

[0314] As the light-blocking layer (BM), a material that blocks light emission from a light-emitting element may be used. It is preferable for the light-blocking layer (BM) to absorb visible light. As the light-blocking layer (BM), a black matrix may be formed using, for example, a metal material, or a resin material containing a pigment (such as carbon black) or a dye. The light-blocking layer (BM) may have a stacked structure of a red color filter, a green color filter, and a blue color filter.

[0315] [Display device (310B)]

[0316] The display device (310B) shown in (A) of FIG. 25 differs from the display device (310A) in that the light-emitting element (190G), the light-emitting element (190B), and the light-emitting element (190SR) each do not have a buffer layer (192) and a buffer layer (194), but have a common layer (112) and a common layer (114). In addition, in the following description of the display device, the description of configurations similar to the display device described above may be omitted.

[0317] In addition, the stacked structure of the light-emitting element (190B), light-emitting element (190G), and light-emitting element (190SR) is not limited to the configuration shown in the display device (310A) and display device (310B). For example, the stacked structure shown in FIGS. 20 to 23 can be appropriately applied to each element.

[0318] [Display device (310C)]

[0319] The display device (310C) shown in (B) of FIG. 25 differs from the display device (310B) in that it does not have a substrate (151) and a substrate (152), but has a substrate (153), a substrate (154), an adhesive layer (155), and an insulating layer (212).

[0320] The substrate (153) and the insulating layer (212) are bonded by an adhesive layer (155). The substrate (154) and the protective layer (195) are bonded by an adhesive layer (142).

[0321] The display device (310C) has a configuration in which an insulating layer (212), a transistor (342), a light-emitting element (190SR), a light-emitting element (190G), and a light-emitting element (190B), etc. formed on a manufacturing substrate are transferred onto a substrate (153). It is preferable that the substrate (153) and the substrate (154) each have flexibility. This can increase the flexibility of the display device (310C). For example, it is preferable to use a resin for the substrate (153) and the substrate (154) respectively.

[0322] As substrates (153) and (154), polyester resins such as polyethylene terephthalate (PET) and polyethylene naphthalate (PEN), polyacrylonitrile resin, acrylic resin, polyimide resin, polymethyl methacrylate resin, polycarbonate (PC) resin, polyethersulfone (PES) resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) resin, ABS resin, cellulose nanofiber, etc., may be used. Glass having a thickness sufficient to be flexible may be used for one or both of the substrates (153) and (154).

[0323] The substrate of the display device of the present embodiment may use a film with high optical isotropy. Examples of films with high optical isotropy include triacetylcellulose (TAC, also known as cellulose triacetate) films, cycloolefin polymer (COP) films, cycloolefin copolymer (COC) films, and acrylic films.

[0324] A more detailed configuration of a display device of one embodiment of the present invention will be described below using FIGS. 26 to 29.

[0325] [Display device (100A)]

[0326] A perspective view of a display device (100A) is shown in FIG. 26, and a cross-sectional view of a display device (100A) is shown in FIG. 27.

[0327] The display device (100A) has a configuration in which a substrate (152) and a substrate (151) are joined. In FIG. 26, the substrate (152) is indicated by a dashed line.

[0328] The display device (100A) has a display section (162), a circuit (164), wiring (165), etc. FIG. 26 shows an example in which an IC (integrated circuit) (173) and an FPC (172) are mounted on the display device (100A). Therefore, the configuration shown in FIG. 26 can also be described as a display module having a display device (100A), an IC, and an FPC.

[0329] For example, a scan line driving circuit can be used as the circuit (164).

[0330] The wiring (165) has the function of supplying signals and power to the display unit (162) and the circuit (164). The signals and power are input to the wiring (165) from the outside through the FPC (172) or input to the wiring (165) from the IC (173).

[0331] FIG. 26 illustrates an example in which an IC (173) is provided on a substrate (151) by means of a COG (Chip On Glass) method or a COF (Chip On Film) method. As for the IC (173), an IC having, for example, a scan line driving circuit or a signal line driving circuit may be applied. Additionally, the display device (100A) and the display module may be configured without providing an IC. Furthermore, the IC may be mounted on an FPC by means of a COF method.

[0332] Figure 27 shows an example of a cross-section in which a portion of the area including the FPC (172), a portion of the area including the circuit (164), a portion of the area including the display part (162), and a portion of the area including the end part are each cut from the display device (100A) shown in Figure 26.

[0333] The display device (100A) shown in FIG. 27 has a transistor (201), a transistor (205), a transistor (206), a transistor (207), a light-emitting element (190B), a light-emitting element (190G), a light-emitting element (190SR), etc. between a substrate (151) and a substrate (152).

[0334] The substrate (152) and the insulating layer (214) are bonded by an adhesive layer (142). A solid sealing structure or a hollow sealing structure may be applied to the sealing of the light-emitting element (190B), light-emitting element (190G), and light-emitting element (190SR). In FIG. 27, the space (143) surrounded by the substrate (152), the adhesive layer (142), and the insulating layer (214) is filled with an inert gas (nitrogen, argon, etc.), and a hollow sealing structure is applied. The adhesive layer (142) may be provided overlapping with the light-emitting element (190B), the light-emitting element (190G), and the light-emitting element (190SR). Additionally, the space (143) surrounded by the substrate (152), the adhesive layer (142), and the insulating layer (214) may be filled with a resin different from that of the adhesive layer (142).

[0335] The light-emitting element (190B) has a stacked structure in which a pixel electrode (191), a common layer (112), a light-emitting layer (193B), a common layer (114), and a common electrode (115) are stacked in this order from the side of the insulating layer (214). The pixel electrode (191) is connected to a conductive layer (222b) of a transistor (207) through an opening provided in the insulating layer (214). The transistor (207) has the function of controlling the operation of the light-emitting element (190B). The end of the pixel electrode (191) is covered by a partition (216). The pixel electrode (191) includes a material that reflects visible light, and the common electrode (115) includes a material that transmits visible light.

[0336] The light-emitting element (190G) has a stacked structure in which a pixel electrode (191), a common layer (112), a light-emitting layer (193G), a common layer (114), and a common electrode (115) are stacked in this order from the side of the insulating layer (214). The pixel electrode (191) is connected to a conductive layer (222b) of a transistor (206) through an opening provided in the insulating layer (214). The transistor (206) has the function of controlling the driving of the light-emitting element (190G).

[0337] The light-emitting element (190SR) has a stacked structure in which a pixel electrode (191), a common layer (112), an active layer (183), a light-emitting layer (193R), a common layer (114), and a common electrode (115) are stacked in this order from the side of the insulating layer (214). The pixel electrode (191) is electrically connected to a conductive layer (222b) of a transistor (205) through an opening provided in the insulating layer (214). The transistor (205) has the function of controlling the operation of the light-emitting element (190SR).

[0338] The light emitted by the light-emitting element (190B), the light-emitting element (190G), and the light-emitting element (190SR) is emitted toward the substrate (152). Additionally, light is incident on the light-emitting element (190SR) through the substrate (152) and the space (143). It is preferable to use a material with high transmittance to visible light for the substrate (152).

[0339] The pixel electrode (191) can be manufactured using the same material and the same process. The common layer (112), the common layer (114), and the common electrode (115) are used in common for the light-emitting element (190B), the light-emitting element (190G), and the light-emitting element (190SR). The light-emitting element (190SR) has a configuration in which an active layer (183) is added to the configuration of the light-emitting element that emits red light. In addition, the light-emitting element (190B), the light-emitting element (190G), and the light-emitting element (190SR) can all have a common configuration except that the configuration of the active layer (183) and the light-emitting layer (193) of each color is different. By doing so, a light-receiving function can be added to the display part (162) of the display device (100A) without significantly increasing the manufacturing process.

[0340] A light-blocking layer (BM) is provided on the side of the substrate (152) that is on the side of the substrate (151). The light-blocking layer (BM) has an opening at a position that overlaps with each of the light-emitting element (190B), the light-emitting element (190G), and the light-emitting element (190SR). By providing the light-blocking layer (BM), the range in which the light-emitting element (190SR) detects light can be controlled. In addition, by having the light-blocking layer (BM), it is possible to suppress the direct incidence of light from the light-emitting element (190G) or the light-emitting element (190B) to the light-emitting element (190SR) without passing through an object. Therefore, a sensor with low noise and high sensitivity can be realized.

[0341] The transistors (201), (205), (206), and (207) are all formed on the substrate (151). These transistors can be manufactured using the same material and the same process.

[0342] On the substrate (151), insulating layers (211), insulating layers (213), insulating layers (215), and insulating layers (214) are provided in this order. A portion of the insulating layer (211) functions as the gate insulating layer of each transistor. A portion of the insulating layer (213) functions as the gate insulating layer of each transistor. The insulating layer (215) is provided to cover the transistor. The insulating layer (214) is provided to cover the transistor and functions as a flattening layer. Furthermore, the number of gate insulating layers and the number of insulating layers covering the transistor are not limited, and each may be a single layer or two or more layers.

[0343] It is desirable to use a material that is resistant to the diffusion of impurities, such as water and hydrogen, into at least one layer of the insulating layer covering the transistor. By doing so, the insulating layer can function as a barrier layer. With such a configuration, the diffusion of impurities from the outside into the transistor can be effectively suppressed, thereby increasing the reliability of the display device.

[0344] It is preferable to use an inorganic insulating film for each of the insulating layer (211), insulating layer (213), and insulating layer (215). For example, inorganic insulating films such as silicon nitride, silicon nitride, silicon oxide, silicon nitride, aluminum oxide, and aluminum nitride may be used. Additionally, hafnium oxide, hafnium nitride, hafnium nitride, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, and neodymium oxide may be used. Furthermore, two or more of the above-described insulating films may be stacked and used. Additionally, a lower film may be provided between the substrate (151) and the transistor. The above-described inorganic insulating film may also be used.

[0345] Here, organic insulating films often have lower barrier properties compared to inorganic insulating films. Therefore, it is desirable for the organic insulating film to have an opening near the end of the display device (100A). This prevents impurities from entering through the organic insulating film from the end of the display device (100A). Alternatively, the organic insulating film may be formed such that the end of the organic insulating film is located inside the end of the display device (100A), so that the organic insulating film is not exposed at the end of the display device (100A).

[0346] An organic insulating film is suitable for the insulating layer (214) that functions as a flattening layer. Materials that can be used for the organic insulating film include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins.

[0347] In the region (228) shown in FIG. 27, an opening is formed in the insulating layer (214). Accordingly, even when an organic insulating film is used in the insulating layer (214), it is possible to suppress the entry of impurities into the display part (162) from the outside through the insulating layer (214). Thus, the reliability of the display device (100A) can be increased.

[0348] The transistor (201), transistor (205), transistor (206), and transistor (207) have a conductive layer (221) that functions as a gate, an insulating layer (211) that functions as a gate insulating layer, a conductive layer (222a) and a conductive layer (222b) that functions as a source and drain, a semiconductor layer (231), an insulating layer (213) that functions as a gate insulating layer, and a conductive layer (223) that functions as a gate. Here, the same hatch pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer (211) is located between the conductive layer (221) and the semiconductor layer (231). The insulating layer (213) is located between the conductive layer (223) and the semiconductor layer (231).

[0349] The structure of the transistor in the display device of the present embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverse staggered transistor, etc., may be used. In addition, a transistor having either a top-gate type or a bottom-gate type structure may be used. Alternatively, a gate may be provided above and below the semiconductor layer where the channel is formed.

[0350] The transistors (201), (205), (206), and (207) are configured such that the semiconductor layer in which the channel is formed is closed by two gates. The transistor may be driven by connecting the two gates and supplying the same signal to them. Alternatively, the threshold voltage of the transistor may be controlled by supplying a potential to one of the two gates to control the threshold voltage and supplying a potential to the other gate to drive it.

[0351] The crystallinity of the semiconductor material used in the transistor is not particularly limited, and any of the following may be used: amorphous semiconductors, single-crystal semiconductors, or semiconductors having crystallinity other than single crystal (microcrystalline semiconductors, polycrystalline semiconductors, or semiconductors having crystalline regions in some parts). Using single-crystal semiconductors or semiconductors having crystallinity is preferable because it can suppress the degradation of transistor characteristics.

[0352] It is preferable for the semiconductor layer of the transistor to be a metal oxide (also called an oxide semiconductor). Alternatively, the semiconductor layer of the transistor may be silicon. Examples of silicon include amorphous silicon and crystalline silicon (low-temperature polysilicon, single-crystal silicon, etc.).

[0353] The semiconductor layer preferably comprises, for example, indium, M (M is one or more types selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, it is preferable that M is one or more types selected from aluminum, gallium, yttrium, and tin.

[0354] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also denoted as IGZO) as a semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, gallium, zinc, and tin. Alternatively, it is preferable to use an oxide having indium and zinc.

[0355] When the semiconductor layer is an In-M-Zn oxide, it is preferable that the atomic ratio of In in the In-M-Zn oxide be greater than or equal to the atomic ratio of M. As the atomic ratio of metallic elements in such In-M-Zn oxides, compositions such as In:M:Zn=1:1:1 or near, In:M:Zn=1:1:1.2 or near, In:M:Zn=2:1:3 or near, In:M:Zn=3:1:2 or near, In:M:Zn=4:2:3 or near, In:M:Zn=4:2:4.1 or near, In:M:Zn=5:1:3 or near, In:M:Zn=5:1:6 or near, In:M:Zn=5:1:7 or near, In:M:Zn=5:1:8 or near, In:M:Zn=10:1:3 or near, In:M:Zn=6:1:6 or near Examples include the nearby composition, In:M:Zn=5:2:5, or the nearby composition. Furthermore, the nearby composition refers to a range of ±30% of the desired atomic ratio.

[0356] For example, when the atomic ratio is stated as In:Ga:Zn=4:2:3 or a composition in the vicinity thereof, it includes cases where, when the atomic ratio of In is set to 4, the atomic ratio of Ga is 1 or more and 3 or less, and the atomic ratio of Zn is 2 or more and 4 or less. Also, when the atomic ratio is stated as In:Ga:Zn=5:1:6 or a composition in the vicinity thereof, it includes cases where, when the atomic ratio of In is set to 5, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is 5 or more and 7 or less. Also, when the atomic ratio is stated as In:Ga:Zn=1:1:1 or a composition in the vicinity thereof, it includes cases where, when the atomic ratio of In is set to 1, the atomic ratio of Ga is greater than 0.1 and 2 or less, and the atomic ratio of Zn is greater than 0.1 and 2 or less.

[0357] The transistors of the circuit (164) and the transistors of the display unit (162) may have the same structure or different structures. The structures of the multiple transistors of the circuit (164) may all be the same or there may be two or more types. Likewise, the structures of the multiple transistors of the display unit (162) may all be the same or there may be two or more types.

[0358] A connection portion (204) is provided in the area of ​​the substrate (151) where the substrate (152) does not overlap. In the connection portion (204), wiring (165) is electrically connected to the FPC (172) through a conductive layer (166) and a connection layer (242). On the upper surface of the connection portion (204), a conductive layer (166) obtained by processing a conductive film identical to the pixel electrode (191) is exposed. This allows the connection portion (204) and the FPC (172) to be electrically connected through the connection layer (242).

[0359] Various optical components may be arranged on the outer side of the substrate (152). Examples of optical components include a polarizing plate, a phase difference plate, a light diffusion layer (such as a diffusion film), an anti-reflection layer, and a light-concentrating film. Additionally, on the outer side of the substrate (152), an antistatic film that suppresses dust adhesion, a water-repellent film that makes it difficult for contamination to adhere, a hard coat film that suppresses damage from use, and a shock-absorbing layer may be arranged.

[0360] The substrate (151) and the substrate (152) may each be made of glass, quartz, ceramic, sapphire, resin, etc. If a flexible material is used for the substrate (151) and the substrate (152), the flexibility of the display device can be increased.

[0361] As the adhesive layer, various types of curing adhesives may be used, such as photo-curing adhesives like UV-curing adhesives, reaction-curing adhesives, heat-curing adhesives, and anaerobic adhesives. Examples of these adhesives include epoxy resin, acrylic resin, silicone resin, phenolic resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, and EVA (ethylene vinyl acetate) resin. In particular, materials with low moisture permeability, such as epoxy resin, are preferred. In addition, a two-component mixed resin may be used. Furthermore, an adhesive sheet may be used.

[0362] Anisotropic conductive film (ACF), anisotropic conductive paste (ACP), etc. can be used as the connection layer.

[0363] Materials that can be used in the conductive layer, such as the gate, source, and drain of a transistor, as well as various wirings and electrodes constituting a display device, include metals such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, and tungsten, and alloys having the said metals as the main component. A film containing these materials can be used as a single layer or in a stacked structure.

[0364] In addition, as a conductive material having light transparency, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide containing gallium, or graphene may be used. Alternatively, metallic materials such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, and titanium, or alloy materials containing the above metallic materials may be used. Alternatively, nitrides of the above metallic materials (e.g., titanium nitride) may be used. Furthermore, when using metallic materials or alloy materials (or their nitrides), it is desirable to make them thin enough to have light transparency. In addition, a laminated film of the above materials may be used as a conductive layer. For example, using a laminated film of an alloy of silver and magnesium and indium tin oxide is desirable because it can increase conductivity. These may also be used as conductive layers such as various wirings and electrodes constituting a display device, and as conductive layers (conductive layers functioning as pixel electrodes or common electrodes) of light-emitting and light-emitting elements.

[0365] Insulating materials that can be used for each insulating layer include, for example, resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon nitride, silicon nitride, silicon nitride, and aluminum oxide.

[0366] [Display device (100B)]

[0367] A cross-sectional view of the display device (100B) is shown in (A) of FIG. 28.

[0368] The display device (100B) differs mainly from the display device (100A) in that it has a protective layer (195). A detailed description of the configuration of the display device (100A) is omitted.

[0369] By providing a protective layer (195) covering the light-emitting element (190B), the light-emitting element (190G), and the light-emitting element (190SR), the entry of impurities such as water into the light-emitting element (190B), the light-emitting element (190G), and the light-emitting element (190SR) can be suppressed, thereby increasing the reliability of the light-emitting element (190B), the light-emitting element (190G), and the light-emitting element (190SR).

[0370] In the region (228) near the end of the display device (100B), it is preferable for the insulating layer (215) and the protective layer (195) to come into contact with each other through the opening of the insulating layer (214). In particular, it is preferable for the inorganic insulating film of the insulating layer (215) and the inorganic insulating film of the protective layer (195) to come into contact with each other. By doing so, it is possible to suppress the entry of impurities into the display part (162) from the outside through the organic insulating film. Thus, the reliability of the display device (100B) can be increased.

[0371] The protective layer (195) may be a single layer or a laminated structure, and for example, the protective layer (195) may be a three-layer structure having an inorganic insulating layer on the common electrode (115), an organic insulating layer on the inorganic insulating layer, and an inorganic insulating layer on the organic insulating layer. In this case, it is preferable to extend the end of the inorganic insulating film outwardly beyond the end of the organic insulating film.

[0372] In addition, a lens may be provided in an area overlapping with the light-emitting element (190SR). By doing so, the sensitivity and precision of the sensor using the light-emitting element (190SR) can be increased.

[0373] It is preferable that the lens has a refractive index of 1.3 or higher and 2.5 or lower. The lens may be formed using at least one of an inorganic material and an organic material. For example, a material containing a resin may be used for the lens. Additionally, a material containing at least one of an oxide and a sulfide may be used for the lens.

[0374] Specifically, resins containing chlorine, bromine, or iodine, resins containing heavy metal atoms, resins containing aromatic rings, resins containing sulfur, etc., can be used in lenses. Alternatively, a material comprising a resin and nanoparticles of a material with a higher refractive index than the resin can be used in lenses. Titanium oxide or zirconium oxide, etc., can be used as nanoparticles.

[0375] In addition, cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, oxides containing indium and tin, or oxides containing indium, gallium, and zinc, etc., can be used in the lens. Or zinc sulfide, etc., can be used in the lens.

[0376] In addition, in the display device (100B), the protective layer (195) and the substrate (152) are bonded by an adhesive layer (142). The adhesive layer (142) is provided overlapping with the light-emitting element (190B), the light-emitting element (190G), and the light-emitting element (190SR), respectively, and a solid sealing structure is applied to the display device (100B).

[0377] [Display device (100C)]

[0378] A cross-sectional view of the display device (100C) is shown in (A) of FIG. 29.

[0379] The display device (100C) has a transistor structure different from the display device (100B).

[0380] The display device (100C) has transistors (208), transistor (209), and transistor (210) on a substrate (151).

[0381] The transistor (208), transistor (209), and transistor (210) have a conductive layer (221) functioning as a gate, an insulating layer (211) functioning as a gate insulating layer, a semiconductor layer having a channel forming region (231i) and a pair of low-resistance regions (231n), a conductive layer (222a) connected to one of the pair of low-resistance regions (231n), a conductive layer (222b) connected to the other of the pair of low-resistance regions (231n), an insulating layer (225) functioning as a gate insulating layer, a conductive layer (223) functioning as a gate, and an insulating layer (215) covering the conductive layer (223). The insulating layer (211) is located between the conductive layer (221) and the channel forming region (231i). The insulating layer (225) is located between the conductive layer (223) and the channel forming region (231i).

[0382] The conductive layer (222a) and the conductive layer (222b) are each connected to a low-resistance region (231n) through an opening provided in the insulating layer (225) and the insulating layer (215). One of the conductive layer (222a) and the conductive layer (222b) functions as a source, and the other functions as a drain.

[0383] The pixel electrode (191) of the light-emitting element (190G) is electrically connected to one of the pair of low-resistance regions (231n) of the transistor (208) through the conductive layer (222b).

[0384] The pixel electrode (191) of the light-emitting element (190SR) is electrically connected to the other side of a pair of low-resistance regions (231n) of the transistor (209) through a conductive layer (222b).

[0385] In FIG. 29 (A), an example is shown in which an insulating layer (225) covers the upper surface and side surface of a semiconductor layer. Meanwhile, in the transistor (202) shown in FIG. 29 (B), the insulating layer (225) overlaps with the channel forming region (231i) of the semiconductor layer (231) and does not overlap with the low-resistance region (231n). For example, the structure shown in FIG. 29 (B) can be fabricated by processing the insulating layer (225) using a conductive layer (223) as a mask. In FIG. 29 (B), an insulating layer (215) is provided to cover the insulating layer (225) and the conductive layer (223), and the conductive layer (222a) and the conductive layer (222b) are each connected to the low-resistance region (231n) through the opening of the insulating layer (215). Additionally, an insulating layer (218) covering the transistor may be provided.

[0386] In addition, the display device (100C) differs from the display device (100B) in that it does not have a substrate (151) and a substrate (152), but has a substrate (153), a substrate (154), an adhesive layer (155), and an insulating layer (212).

[0387] The substrate (153) and the insulating layer (212) are bonded by an adhesive layer (155). The substrate (154) and the protective layer (195) are bonded by an adhesive layer (142).

[0388] The display device (100C) has a configuration in which an insulating layer (212), a transistor (208), a transistor (209), a transistor (210), a light-emitting element (190SR), and a light-emitting element (190G), etc. formed on a manufacturing substrate are transferred onto a substrate (153). It is preferable that the substrate (153) and the substrate (154) each have flexibility. By doing so, the flexibility of the display device (100C) can be increased.

[0389] In the insulating layer (212), an inorganic insulating film that can be used for the insulating layer (211), the insulating layer (213), and the insulating layer (215) may be used.

[0390] As described above, in the display device of the present embodiment, a light-emitting element is provided instead of a light-emitting element in a subpixel representing a certain color. Since the light-emitting element serves as both a light-emitting element and a light-receiving element, a light-receiving function can be provided to the pixel without increasing the number of subpixels included in the pixel. Furthermore, a light-receiving function can be provided to the pixel without reducing the precision of the display device or the aperture ratio of each subpixel.

[0391] This embodiment may be implemented by appropriately combining at least a part thereof with other embodiments described in this specification.

[0392] (Embodiment 3)

[0393] In this embodiment, a metal oxide (also called an oxide semiconductor) that can be used in the OS transistor described in the previous embodiment is described.

[0394] It is preferable that the metal oxide contains at least indium or zinc. It is particularly preferable that it contains indium and zinc. In addition to these, it is preferable that it contains aluminum, gallium, yttrium, tin, etc. In addition, it may contain one or more types selected from boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, magnesium, cobalt, etc.

[0395] In addition, metal oxides can be formed using chemical vapor deposition (CVD) methods such as sputtering and metal-organic chemical vapor deposition (MOCVD), and atomic layer deposition (ALD).

[0396] Classification of Crystal Structures

[0397] Examples of crystal structures of oxide semiconductors include amorphous (including completely amorphous), c-axis-aligned crystalline (CAAC), nanocrystalline (nc), cloud-aligned composite (CAC), single crystal, and polycrystalline.

[0398] In addition, the crystal structure of a film or substrate can be evaluated using X-ray diffraction (XRD) spectra. For example, it can be evaluated using XRD spectra obtained by GIXD (Grazing-Incidence XRD) measurements. The GIXD method is also known as the thin film method or the Seemann-Bohlin method.

[0399] For example, in a quartz glass substrate, the peak shapes of the XRD spectrum are nearly symmetrical. On the other hand, in an IGZO film having a crystalline structure, the peak shapes of the XRD spectrum are asymmetrical. The asymmetrical shape of the XRD spectrum peaks indicates the presence of crystals within the film or substrate. In other words, if the peak shapes of the XRD spectrum are not symmetrical, the film or substrate cannot be considered to be in an amorphous state.

[0400] Furthermore, the crystal structure of a film or substrate can be evaluated using diffraction patterns (also known as nano-beam electron diffraction patterns) observed via Nano Beam Electron Diffraction (NBED). For example, a halo is observed in the diffraction pattern of a quartz glass substrate, confirming that the quartz glass is in an amorphous state. In contrast, a spot-shaped pattern is observed in the diffraction pattern of an IGZO film deposited at room temperature, rather than a halo. Therefore, it is presumed that the IGZO film deposited at room temperature is in an intermediate state—neither crystalline nor amorphous—and thus cannot be concluded to be in an amorphous state.

[0401] Structure of Oxide Semiconductors

[0402] In addition, oxide semiconductors may be classified differently from the above when focusing on their structure. For example, oxide semiconductors are divided into single-crystal oxide semiconductors and other non-single-crystal oxide semiconductors. Examples of non-single-crystal oxide semiconductors include the aforementioned CAAC-OS and nc-OS. Furthermore, non-single-crystal oxide semiconductors include polycrystalline oxide semiconductors, a-like OS (amorphous-like oxide semiconductor), amorphous oxide semiconductors, etc.

[0403] Here, the aforementioned CAAC-OS, nc-OS, and a-like OS are explained in detail.

[0404] [CAAC-OS]

[0405] CAAC-OS is an oxide semiconductor having multiple crystal regions, wherein the c-axis in the multiple crystal regions is oriented in a specific direction. Furthermore, the specific direction refers to the thickness direction of the CAAC-OS film, the normal direction of the surface to be formed of the CAAC-OS film, or the normal direction of the surface of the CAAC-OS film. Additionally, a crystal region is a region in which the atomic arrangement has periodicity. Furthermore, if the atomic arrangement is considered as a lattice arrangement, the crystal region is also a region in which the lattice arrangement is aligned. Furthermore, CAAC-OS has a region in which multiple crystal regions are connected in the direction of the ab plane, and this region may have deformation. Furthermore, deformation refers to the part in the region where multiple crystal regions are connected in which the direction of the lattice arrangement changes between a region in which the lattice arrangement is aligned and another region in which the lattice arrangement is aligned. In other words, CAAC-OS is an oxide semiconductor that has a c-axis orientation and does not have a clear orientation in the direction of the ab plane.

[0406] In addition, each of the above-mentioned multiple crystal regions is composed of one or more microcrystalline crystals (crystals with a maximum diameter of less than 10 nm). When a crystal region is composed of a single microcrystalline crystal, the maximum diameter of the crystal region is less than 10 nm. In addition, when a crystal region is composed of multiple microcrystalline crystals, the size of the crystal region may be several tens of nm.

[0407] In addition, in In-M-Zn oxide (where element M is one or more types selected from aluminum, gallium, yttrium, tin, titanium, etc.), CAAC-OS tends to have a layered crystal structure (also called a layered structure) in which a layer containing indium (In) and oxygen (hereinafter referred to as the In layer) and a layer containing element M, zinc (Zn), and oxygen (hereinafter referred to as the (M, Zn) layer) are stacked. In addition, indium and element M can be substituted for each other. Therefore, indium may be included in the (M, Zn) layer. In addition, element M may be included in the In layer. In addition, Zn may be included in the In layer. The above layered structure is observed as a lattice structure, for example, in a high-resolution TEM (Transmission Electron Microscope) image.

[0408] For example, when performing structural analysis of a CAAC-OS membrane using an XRD device,

[0409] In out-of-plane XRD measurements using θ / 2θ scans, a peak indicating c-axis orientation is detected at 2θ = 31° or nearby. Additionally, the position of the peak indicating c-axis orientation (value of 2θ) may vary depending on the type and composition of the metal elements constituting CAAC-OS.

[0410] In addition, for example, multiple spots are observed in the electron beam diffraction pattern of a CAAC-OS film. Furthermore, some spots and other spots are observed at point-symmetric positions with the spot of the incident electron beam that has passed through the sample (also called the direct spot) as the center of symmetry.

[0411] When observing the crystal region from the aforementioned specific direction, the lattice arrangement within the crystal region is fundamentally a hexagonal lattice; however, the unit cell is not limited to a regular hexagon but may be non-regular hexagonal. Furthermore, the deformation may result in lattice arrangements such as pentagons or heptagons. Additionally, in CAAC-OS, clear grain boundaries cannot be observed even near deformation. In other words, it can be seen that the formation of grain boundaries is suppressed by the deformation of the lattice arrangement. This is thought to be because CAAC-OS allows for deformation due to factors such as the undense arrangement of oxygen atoms in the ab plane direction and changes in the bond distance between atoms resulting from the substitution of metal atoms.

[0412] Furthermore, crystal structures in which distinct grain boundaries are observed are so-called polycrystalline. Grain boundaries act as recombination centers, and carrier trapping is highly likely to cause a decrease in transistor on-current and field-effect mobility. Therefore, CAAC-OS, in which distinct grain boundaries are not observed, is one of the crystalline oxides that possesses a crystal structure suitable for the semiconductor layer of a transistor. Additionally, for the construction of CAAC-OS, a composition including Zn is desirable. For example, In-Zn oxide and In-Ga-Zn oxide are suitable because they can suppress the formation of grain boundaries more effectively than In oxide.

[0413] CAAC-OS is an oxide semiconductor with high crystallinity in which distinct grain boundaries are not observed. Therefore, it can be said that the degradation of electron mobility caused by grain boundaries is unlikely to occur in CAAC-OS. Furthermore, since the crystallinity of oxide semiconductors can degrade due to the incorporation of impurities or the formation of defects, CAAC-OS can be described as an oxide semiconductor with low levels of impurities and defects (such as oxygen vacancies). Consequently, oxide semiconductors containing CAAC-OS exhibit stable physical properties. Therefore, oxide semiconductors with CAAC-OS are resistant to heat and highly reliable. Additionally, CAAC-OS remains stable even under high temperatures during the manufacturing process (so-called thermal budget). Thus, using CAAC-OS in OS transistors allows for greater flexibility in the manufacturing process.

[0414] nc-OS exhibits periodicity in its atomic arrangement in minute regions (e.g., regions between 1 nm and 10 nm, particularly between 1 nm and 3 nm). In other words, nc-OS possesses microcrystalline structures. Furthermore, since the size of these microcrystalline structures is, for example, between 1 nm and 10 nm, particularly between 1 nm and 3 nm, they are also referred to as nanocrystalline structures. Additionally, in nc-OS, no regularity in crystal orientation is observed between different nanocrystalline structures. Consequently, no orientation is observed throughout the film. Therefore, depending on the analysis method, nc-OS may be indistinguishable from α-like OS or amorphous oxide semiconductors. For example, when performing structural analysis of an nc-OS film using an XRD device, no peaks indicating crystallinity are detected in out-of-plane XRD measurements using θ / 2θ scans. In addition, when electron beam diffraction (also called limited-field electron beam diffraction) is performed on an nc-OS film using an electron beam with a probe diameter larger than that of a nanocrystal (e.g., 50 nm or more), a diffraction pattern such as a halo pattern is observed. On the other hand, when electron beam diffraction (also called nanobeam electron beam diffraction) is performed on an nc-OS film using an electron beam with a probe diameter that is close to or smaller than that of a nanocrystal (e.g., 1 nm or more and 30 nm or less), an electron beam diffraction pattern is obtained in which multiple spots are observed within a ring-shaped region centered on a direct spot.

[0415] [a-like OS]

[0416] a-like OS is an oxide semiconductor with a structure intermediate between nc-OS and amorphous oxide semiconductors. a-like OS possesses voids or low-density regions. In other words, a-like OS has lower crystallinity compared to nc-OS and CAAC-OS. Additionally, a-like OS has a higher hydrogen concentration within the film compared to nc-OS and CAAC-OS.

[0417] <<Composition of Oxide Semiconductors>>

[0418] Next, the aforementioned CAC-OS will be explained in detail. Furthermore, CAC-OS concerns the material composition.

[0419] [CAC-OS]

[0420] CAC-OS is a composition of a material in which, for example, elements constituting a metal oxide are localized in sizes ranging from 0.5 nm to 10 nm, preferably from 1 nm to 3 nm, or in the vicinity thereof. Additionally, below, a state in which one or more metal elements are localized in a metal oxide, and regions having said metal elements are mixed in sizes ranging from 0.5 nm to 10 nm, preferably from 1 nm to 3 nm, or in the vicinity thereof, is also referred to as a mosaic pattern or a patch pattern.

[0421] In addition, CAC-OS is a composition in which the material is separated into a first region and a second region to form a mosaic pattern, and the first region is distributed within the film (hereinafter also referred to as a cloud phase). That is, CAC-OS is a composite metal oxide having a composition in which the first region and the second region are mixed.

[0422] Here, the atomic number ratios of In, Ga, and Zn to the metal elements constituting the CAC-OS in In-Ga-Zn oxide are denoted as [In], [Ga], and [Zn], respectively. For example, in the CAC-OS in In-Ga-Zn oxide, the first region is a region where [In] is greater than [In] in the composition of the CAC-OS film. Also, the second region is a region where [Ga] is greater than [Ga] in the composition of the CAC-OS film. Or, for example, the first region is a region where [In] is greater than [In] in the second region and [Ga] is smaller than [Ga] in the second region. Also, the second region is a region where [Ga] is greater than [Ga] in the first region and [In] is smaller than [In] in the first region.

[0423] Specifically, the first region is a region in which indium oxide, indium zinc oxide, etc. are the main components. Also, the second region is a region in which gallium oxide, gallium zinc oxide, etc. are the main components. That is, the first region can be rephrased as a region in which In is the main component. Also, the second region can be rephrased as a region in which Ga is the main component.

[0424] In addition, there are cases where a clear boundary cannot be observed between the first region and the second region.

[0425] Furthermore, CAC-OS in In-Ga-Zn oxide refers to a composition in which regions primarily composed of Ga and regions primarily composed of In exist randomly in a mosaic pattern within a material composition containing In, Ga, Zn, and O. Therefore, it is presumed that CAC-OS possesses a structure in which metal elements are non-uniformly distributed.

[0426] CAC-OS can be formed, for example, by a sputtering method under conditions where the substrate is not intentionally heated. In addition, when forming CAC-OS by a sputtering method, it is preferable to use one or more selected from inert gas (typically argon), oxygen gas, and nitrogen gas as the film-forming gas. Furthermore, it is desirable for the ratio of the oxygen gas flow rate to the total flow rate of the film-forming gas during film formation to be as low as possible, for example, it is desirable to have the ratio of the oxygen gas flow rate to the total flow rate of the film-forming gas during film formation at 0% or more and less than 30%, preferably at 0% or more and 10% or less.

[0427] In addition, for example, in the CAC-OS of In-Ga-Zn oxide, it can be confirmed from the EDX mapping obtained using Energy Dispersive X-ray Spectroscopy (EDX) that the structure has a localized and mixed region with In as the main component (first region) and a region with Ga as the main component (second region).

[0428] Here, the first region is a region with higher conductivity compared to the second region. That is, the conductivity of the metal oxide is manifested as carriers flow through the first region. Therefore, as the first region is distributed in a cloud-like manner within the metal oxide, a high electric field-effect mobility (μ) can be realized.

[0429] On the other hand, the second region is a region with higher insulation properties compared to the first region. That is, by distributing the second region within the metal oxide, leakage current can be suppressed.

[0430] Therefore, when CAC-OS is used in a transistor, the conductivity attributed to the first region and the insulation attributed to the second region act complementarily, thereby imparting a switching function (On / Off function) to the CAC-OS. In other words, CAC-OS possesses a conductive function in part of the material, an insulating function in part of the material, and functions as a semiconductor throughout the entire material. By separating the conductive and insulating functions, both capabilities can be maximized. Therefore, by using CAC-OS in a transistor, a high on-current (I on It is possible to realize high electric field effect mobility (μ) and good switching operation.

[0431] Furthermore, transistors using CAC-OS have high reliability. Therefore, CAC-OS is optimal for various semiconductor devices, including display devices.

[0432] Oxide semiconductors have various structures, and each has different characteristics. An oxide semiconductor of one form of the present invention may have two or more types among amorphous oxide semiconductors, polycrystalline oxide semiconductors, a-like OS, CAC-OS, nc-OS, and CAAC-OS.

[0433] Transistor with oxide semiconductor

[0434] Next, the case where the above oxide semiconductor is used in a transistor will be explained.

[0435] By using the above oxide semiconductor in a transistor, a transistor with high field-effect mobility can be realized. In addition, a transistor with high reliability can be realized.

[0436] It is desirable to use oxide semiconductors with a low carrier concentration in transistors. For example, the carrier concentration of an oxide semiconductor is 1×10⁻⁶ 17 cm -3 Below, preferably 1×10 15 cm -3 Below, more preferably 1×10 13 cm -3 Below, more preferably 1×10 11 cm -3 Below, more preferably 1×10 10 cm -3 Less than and 1×10 -9 cm -3 That is all. Furthermore, when lowering the carrier concentration of an oxide semiconductor film, it is desirable to lower the impurity concentration within the oxide semiconductor film and lower the defect level density. In this specification and other contexts, a low impurity concentration and a low defect level density are referred to as high-purity intrinsic or substantially high-purity intrinsic. Additionally, an oxide semiconductor with a low carrier concentration may be referred to as high-purity intrinsic or an oxide semiconductor of substantially high-purity intrinsic.

[0437] In addition, since high-purity intrinsic or substantially high-purity intrinsic oxide semiconductor films have a low defect level density, the trap level density may also be low.

[0438] Furthermore, charges trapped in the trap levels of oxide semiconductors take a long time to dissipate, sometimes acting like fixed charges. Therefore, transistors in which channel formation regions are formed in oxide semiconductors with high trap level density may experience unstable electrical characteristics.

[0439] Therefore, to stabilize the electrical characteristics of a transistor, it is effective to reduce the impurity concentration within the oxide semiconductor. Furthermore, to reduce the impurity concentration within the oxide semiconductor, it is desirable to also reduce the impurity concentration in adjacent films. Examples of impurities include hydrogen, nitrogen, alkali metals, alkaline earth metals, iron, nickel, and silicon.

[0440] Impurities

[0441] Here, the influence of each impurity in oxide semiconductors is explained.

[0442] If an oxide semiconductor contains Group 14 elements such as silicon or carbon, defect levels are formed within the oxide semiconductor. Therefore, the concentration of silicon or carbon in the oxide semiconductor and the concentration of silicon or carbon near the interface with the oxide semiconductor (concentration obtained by Secondary Ion Mass Spectrometry (SIMS)) are 2×10⁻⁶ 18 atoms / cm 3 Below, preferably 2×10 17 atoms / cm 3 The following applies.

[0443] Furthermore, if alkali metals or alkaline earth metals are included in oxide semiconductors, they may form defect levels and generate carriers. Therefore, transistors using oxide semiconductors containing alkali metals or alkaline earth metals are prone to exhibiting normaly-on characteristics. Consequently, the concentration of alkali metals or alkaline earth metals within the oxide semiconductor obtained by SIMS is 1×10⁻⁶ 18 atoms / cm 3 Below, preferably 2×10 16 atoms / cm 3 The following applies.

[0444] Furthermore, when nitrogen is included in an oxide semiconductor, electron carriers are generated, increasing the carrier concentration and making it prone to n-type transformation. As a result, transistors using oxide semiconductors containing nitrogen are prone to exhibiting normaly-on characteristics. Alternatively, the inclusion of nitrogen in an oxide semiconductor may lead to the formation of trap levels. Consequently, the electrical characteristics of the transistor may become unstable. Therefore, the nitrogen concentration within the oxide semiconductor obtained by SIMS is set to 5×10 19 atoms / cm 3 Less than, preferably 5×10 18 atoms / cm 3 Below, more preferably 1×10 18 atoms / cm 3 Below, more preferably 5×10 17 atoms / cm 3 The following applies.

[0445] Furthermore, hydrogen contained in oxide semiconductors reacts with oxygen bonded to metal atoms to form water, which may result in the formation of oxygen vacancies. In some cases, hydrogen entering these oxygen vacancies generates electrons acting as carriers. Additionally, some of the hydrogen may bond with oxygen bonded to metal atoms to generate electrons acting as carriers. Consequently, transistors using oxide semiconductors containing hydrogen are prone to exhibiting normaly-on characteristics. Therefore, it is desirable to reduce the hydrogen content within the oxide semiconductor as much as possible. Specifically, the hydrogen concentration obtained by SIMS in the oxide semiconductor is 1×10⁻⁶ 20 atoms / cm 3 Less than, preferably 1×10 19 atoms / cm 3 Less than, more preferably 5×10 18 atoms / cm 3 Less than, more preferably 1×10 18 atoms / cm 3 Make it less than.

[0446] By using an oxide semiconductor with sufficiently reduced impurities in the channel formation region of a transistor, stable electrical characteristics can be imparted.

[0447] This embodiment may be implemented by appropriately combining at least a part thereof with other embodiments described in this specification.

[0448] (Embodiment 4)

[0449] In this embodiment, an electronic device of one form of the present invention is described using FIGS. 30 to 32.

[0450] The electronic device of the present embodiment has a display device of one form of the present invention. For example, a display device of one form of the present invention can be applied to the display portion of the electronic device. Since the display device of one form of the present invention has a function of detecting light, it can perform biometric authentication, detection of touch actions (contact or approach), etc. at the display portion. By doing so, the functionality and convenience of the electronic device can be enhanced.

[0451] Examples of electronic devices include, for instance, televisions, desktop or laptop personal computers, monitors for computers, digital signage, large game machines such as pachinko machines, and other electronic devices having relatively large screens, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game consoles, portable information terminals, and sound playback devices.

[0452] The electronic device of the present embodiment may have a sensor (including a function for measuring force, displacement, position, velocity, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, odor, or infrared radiation).

[0453] The electronic device of the present embodiment may have various functions. For example, it may have a function of displaying various information (still images, video, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, or time, a function of executing various software (programs), a wireless communication function, and a function of reading programs or data recorded on a recording medium.

[0454] The electronic device (6500) shown in (A) of Fig. 30 is a portable information terminal that can be used as a smartphone.

[0455] The electronic device (6500) has a housing (6501), a display unit (6502), a power button (6503), a button (6504), a speaker (6505), a microphone (6506), a camera (6507), and a light source (6508), etc. The display unit (6502) has a touch panel function.

[0456] A display device of one form of the present invention can be applied to the display unit (6502).

[0457] (B) of FIG. 30 is a schematic cross-sectional view including the end of the housing (6501) on the side of the microphone (6506).

[0458] A light-transmitting protective member (6510) is provided on the display side of the housing (6501), and a display panel (6511), an optical member (6512), a touch sensor panel (6513), a printed circuit board (6517), a battery (6518), etc. are arranged within the space enclosed by the housing (6501) and the protective member (6510).

[0459] A display panel (6511), an optical member (6512), and a touch sensor panel (6513) are fixed to the protective member (6510) by an adhesive layer (not shown).

[0460] A portion of the display panel (6511) is folded in an area outside the display portion (6502), and an FPC (6515) is connected to this folded portion. An IC (6516) is mounted on the FPC (6515). The FPC (6515) is connected to a terminal provided on the printed circuit board (6517).

[0461] A flexible display of one form of the present invention can be applied to the display panel (6511). Therefore, a very lightweight electronic device can be realized. In addition, since the display panel (6511) is very thin, a large capacity battery (6518) can be installed without increasing the thickness of the electronic device. Furthermore, by folding a part of the display panel (6511) and placing a connection part with the FPC (6515) on the back side of the pixel part, a slim bezel electronic device can be realized.

[0462] By using a display device of one form of the present invention on the display panel (6511), imaging can be performed on the display unit (6502). For example, fingerprint authentication can be performed by capturing a fingerprint with the display panel (6511).

[0463] By having the display unit (6502) further include a touch sensor panel (6513), the display unit (6502) can be provided with a touch panel function. Various methods such as capacitive, resistive, surface acoustic wave, infrared, optical, and pressure-sensitive methods can be used as the touch sensor panel (6513). Alternatively, the display panel (6511) may function as a touch sensor, in which case the touch sensor panel (6513) does not need to be provided.

[0464] An example of a television device is shown in (A) of FIG. 31. The television device (7100) is provided with a display unit (7000) in a housing (7101). Here, a configuration is shown in which the housing (7101) is supported by a stand (7103).

[0465] A display device of one form of the present invention can be applied to the display unit (7000).

[0466] The television device (7100) shown in (A) of FIG. 31 can be operated by an operation switch having a housing (7101) or by a separate remote controller (7111). Alternatively, a touch sensor may be provided on the display unit (7000), or the television device (7100) may be operated by touching the display unit (7000) with a finger or the like. The remote controller (7111) may have a display unit that displays information output from the remote controller (7111). Channels and volume may be operated by the operation keys or touch panel of the remote controller (7111), and images displayed on the display unit (7000) may be operated.

[0467] In addition, the television device (7100) is configured to include a receiver and a modem, etc. General television broadcasts can be received through the receiver. Furthermore, by connecting to a communication network via wired or wireless means through the modem, information communication can be performed in a unidirectional (from sender to receiver) or bidirectional (between sender and receiver, or between receivers, etc.).

[0468] An example of a notebook-type personal computer is shown in (B) of FIG. 31. The notebook-type personal computer (7200) has a housing (7211), a keyboard (7212), a pointing device (7213), an external connection port (7214), etc. A display unit (7000) is provided in the housing (7211).

[0469] A display device of one form of the present invention can be applied to the display unit (7000).

[0470] An example of digital signage is shown in (C) and (D) of Fig. 31.

[0471] The digital signage (7300) shown in (C) of FIG. 31 has a housing (7301), a display unit (7000), and a speaker (7303), etc. It may also have an LED lamp, an operation key (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, etc.

[0472] (D) of FIG. 31 is a digital signage (7400) provided on a cylindrical column (7401). The digital signage (7400) has a display (7000) provided along the curved surface of the column (7401).

[0473] In (C) and (D) of FIG. 31, a display device of one form of the present invention can be applied to the display unit (7000).

[0474] The wider the display section (7000), the more information can be provided at once. Additionally, the wider the display section (7000), the easier it is to catch people's eyes, and, for example, the more effective the promotion of an advertisement can be.

[0475] By applying a touch panel to the display unit (7000), it is desirable not only to display images or videos on the display unit (7000) but also to allow the user to operate it intuitively. In addition, when used for the purpose of providing information such as route information or traffic information, usability can be enhanced through intuitive operation.

[0476] In addition, as shown in (C) and (D) of FIG. 31, it is preferable that the digital signage (7300) or digital signage (7400) be connected via wireless communication with an information terminal (7311) or an information terminal (7411), such as a smartphone owned by the user. For example, information about an advertisement displayed on the display unit (7000) can be displayed on the screen of the information terminal (7311) or the information terminal (7411). In addition, the display of the display unit (7000) can be switched by operating the information terminal (7311) or the information terminal (7411).

[0477] Additionally, a game can be executed on the digital signage (7300) or digital signage (7400) using the screen of the information terminal (7311) or the information terminal (7411) as a control means (controller). By doing so, an unspecified number of users can simultaneously participate in and enjoy the game.

[0478] The electronic device shown in (A) to (F) of FIG. 32 has a housing (9000), a display unit (9001), a speaker (9003), an operation key (9005) (including a power switch or an operation switch), a connection terminal (9006), a sensor (9007) (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotational speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, longitude, electric field, current, voltage, power, radiation, flow rate, humidity, inclination, vibration, smell, or infrared), a microphone (9008), etc.

[0479] The electronic device shown in (A) to (F) of FIG. 32 has various functions. For example, it may have a function of displaying various information (still images, video, text images, etc.) on a display unit, a touch panel function, a function of displaying a calendar, date, or time, a function of controlling processing by various software (programs), a wireless communication function, and a function of reading and processing programs or data recorded on a recording medium. Furthermore, the functions of the electronic device are not limited to these and may have various functions. The electronic device may have multiple display units. Additionally, the electronic device may be provided with a camera, etc., to capture still images, video, etc., and may have a function of storing them on a recording medium (external or built into the camera), and a function of displaying the captured images on a display unit.

[0480] Detailed information regarding the electronic devices shown in (A) to (F) of FIG. 32 will be explained below.

[0481] FIG. 32 (A) is a perspective view showing a portable information terminal (9101). The portable information terminal (9101) can be used, for example, as a smartphone. Additionally, the portable information terminal (9101) may be provided with a speaker (9003), a connection terminal (9006), a sensor (9007), etc. Additionally, the portable information terminal (9101) may display text, image information, etc. on multiple surfaces thereof. FIG. 32 (A) shows an example in which three icons (9050) are displayed. Additionally, information (9051) represented by a dashed rectangle may be displayed on another surface of the display unit (9001). Examples of information (9051) include notifications of incoming calls such as email, SNS, and phone calls, the subject of the email or SNS, the sender's name, date and time, time, remaining battery level, and antenna reception strength. Alternatively, icons (9050), etc., may be displayed at the location where the information (9051) is displayed.

[0482] FIG. 32 (B) is a perspective view showing a portable information terminal (9102). The portable information terminal (9102) has the function of displaying information on three or more sides of the display unit (9001). Here, an example is shown in which information (9052), information (9053), and information (9054) are displayed on different sides. For example, while the portable information terminal (9102) is stored in the chest pocket of clothing, the user can check the information (9053) displayed at a position visible from above the portable information terminal (9102). The user can check the display without taking the portable information terminal (9102) out of the pocket and, for example, decide whether to answer a call.

[0483] FIG. 32 (C) is a perspective view showing a wristwatch-type portable information terminal (9200). Additionally, the display unit (9001) is provided with a curved display surface and can display along the curved display surface. Additionally, the portable information terminal (9200) can make hands-free calls by communicating with, for example, a wirelessly capable headset. Additionally, the portable information terminal (9200) can perform mutual data transmission, charging, etc. with other information terminals via a connection terminal (9006). Additionally, the charging operation may be performed by wireless power supply.

[0484] FIGS. 32 (D) to (F) are perspective views showing a foldable portable information terminal (9201). FIGS. 32 (D) is a perspective view of the portable information terminal (9201) in an unfolded state, FIGS. 32 (F) is a perspective view of the portable information terminal (9201) in a folded state, and FIGS. 32 (E) is a perspective view of the state in progress of changing from one side of FIGS. 32 (D) and FIGS. 32 (F) to the other. The portable information terminal (9201) has excellent portability in the folded state and excellent visibility of the display due to the seamless and wide display area in the unfolded state. The display unit (9001) of the portable information terminal (9201) is supported by three housings (9000) connected by a hinge (9055). For example, the display part (9001) can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.

[0485] This embodiment may be implemented by appropriately combining at least a part thereof with other embodiments described in this specification. Explanation of the symbols

[0486] SA: Receiver / Luminescent element, Tr1 to Tr2: Transistor, SW1 to SW4: Switch, CS1 to CS2: Capacitive element, SL: Wiring, WX: Wiring, AL: Wiring, CL: Wiring, VCP: Wiring, VPI: Wiring, VL1: Wiring, SR: Receiver / Luminescent element, ELG: Light-emitting element, ELB: Light-emitting element, M1 to M3: Transistor, M10 to M14: Transistor, C1 to C2: Capacitive element, GL: Wiring, TX: Wiring, SE: Wiring, RS: Wiring, REN: Wiring, SL1 to SL3: Wiring, V0L: Wiring, 10: Display device, 11: Display section, 12: Driving circuit section, 13: Driving circuit section, 14: Driving circuit section, 15: Circuit section, 20B: Subpixel, 20G: Subpixel, 20R: Subpixel, 21B: Circuit, 21G: Circuit, 21R: Circuit, 22: Circuit, 30: Pixel, 30B: Pixel, 30G: Pixel

Claims

Claim 1 A display device comprising a first switch to a third switch, a first transistor, a second transistor, a capacitive element, a first wiring, a second wiring, and a light-emitting element, wherein one electrode of the first switch is electrically connected to the first wiring, and the other electrode of the first switch is electrically connected to the gate of the first transistor and one electrode of the capacitive element, and one electrode of the second switch is electrically connected to one of the source and drain of the first transistor, one electrode of the light-emitting element, and the other electrode of the capacitive element, and the other electrode of the second switch is electrically connected to the gate of the second transistor and one electrode of the third switch, and the other electrode of the third switch is electrically connected to the second wiring, and the light-emitting element has a function of emitting light of a first color and a function of receiving light of a second color. Claim 2 A display device according to claim 1, wherein in a first period, the first switch, the second switch, and the third switch are in a conductive state, a data potential is supplied to the first wiring, and a first potential is supplied to the second wiring, and in a second period, the second switch and the third switch are in a conductive state, and a second potential is supplied to the second wiring, and the second potential is lower than the first potential. Claim 3 A display device according to claim 1 or 2, further comprising a fourth switch, wherein one electrode of the fourth switch is electrically connected to one electrode of the second switch and the other electrode is electrically connected to one electrode of the light-emitting element. Claim 4 A display device according to claim 1 or 2, further comprising a fourth switch, wherein one electrode of the fourth switch is electrically connected to one of the source and the drain of the first transistor, and the other electrode of the fourth switch is electrically connected to one electrode of the light-emitting element. Claim 5 A display device comprising a first to sixth transistor, a capacitive element, a light-emitting element, a first wiring, and a second wiring, wherein one of the source and drain of the first transistor is electrically connected to one electrode of the light-emitting element, one of the source and drain of the third transistor is electrically connected to the first wiring, and the other of the source and drain of the third transistor is electrically connected to the gate of the first transistor, one of the source and drain of the fourth transistor is electrically connected to the gate of the second transistor, and the other of the source and drain of the fourth transistor is electrically connected to the second wiring, one of the source and drain of the fifth transistor is electrically connected to one of the source and drain of the second transistor, one of the source and drain of the sixth transistor is electrically connected to one electrode of the light-emitting element, and the other of the source and drain of the sixth transistor A display device having a gate electrically connected to the gate of the second transistor, one electrode of the capacitive element electrically connected to the gate of the first transistor, and the other electrode of the capacitive element electrically connected to one of the source and the drain of the first transistor, and the receiving and emitting element having a function of emitting light of a first color and a function of receiving light of a second color. Claim 6 A display device according to claim 5, further comprising a seventh transistor, wherein the seventh transistor has the function of controlling conduction between one of the source and the drain of the first transistor and one electrode of the light-emitting element. Claim 7 A display device comprising a first to fifth transistor, an eighth transistor, a capacitive element, a light-emitting element, a first wiring, and a second wiring, wherein one of the source and drain of the first transistor is electrically connected to one of the source and drain of the eighth transistor and the gate of the second transistor, one of the source and drain of the third transistor is electrically connected to the first wiring, and the other of the source and drain of the third transistor is electrically connected to the gate of the first transistor, one of the source and drain of the fourth transistor is electrically connected to the gate of the second transistor, and the other of the source and drain of the fourth transistor is electrically connected to the second wiring, one of the source and drain of the fifth transistor is electrically connected to one of the source and drain of the second transistor, and the other of the source and drain of the eighth transistor is connected to one electrode of the light-emitting element A display device that is electrically connected, wherein one electrode of the capacitive element is electrically connected to the gate of the first transistor, and the other electrode of the capacitive element is electrically connected to one of the source and the drain of the first transistor, and the receiving and emitting element has the function of emitting light of a first color and the function of receiving light of a second color. Claim 8 A display device according to any one of claims 5 to 7, further comprising a third wiring, wherein the other of the source and the drain of the fifth transistor is electrically connected to the third wiring. Claim 9 A display device according to any one of claims 5 to 7, wherein the other of the source and the drain of the fifth transistor is electrically connected to the first wiring. Claim 10 A display device according to any one of claims 5 to 7, wherein in a first period, a data potential is supplied to the first wiring and a first potential is supplied to the second wiring, and in a second period, a second potential is supplied to the second wiring and the second potential is lower than the first potential. Claim 11 A display device according to any one of claims 1, 5, and 7, further comprising a light-emitting element, wherein the light-emitting element has the function of emitting light of the second color, and the receiving light-emitting element and the light-emitting element are provided on the same surface. Claim 12 A display device according to claim 11, wherein the receiving and emitting element comprises a first pixel electrode, a first emitting layer, an active layer, and a first electrode, and the emitting element comprises a second pixel electrode, a second emitting layer, and the first electrode, and the first pixel electrode and the second pixel electrode are formed by processing the same conductive film. Claim 13 A display module comprising a display device described in any one of claims 1, 5, and 7, and a connector or an integrated circuit. Claim 14 An electronic device comprising at least one of a display module described in claim 13, an antenna, a battery, a housing, a camera, a speaker, a microphone, a touch sensor, and an operation button.

Images