Display device and manufacturing method thereof

Abstract

A display device according to one embodiment comprises a substrate; an inorganic insulating layer located on the substrate; a conductor located on the inorganic insulating layer; and an organic insulating layer located on the conductor and including an opening that partially exposes the upper surface of the conductor, wherein at least one of a disulfide including a siloxane, a thiol, a phosphate, and a sulfur-based amine is bonded to the conductor exposed through the opening.

Description

Technology Field

[0001] The present disclosure relates to a display device and a method for manufacturing the same. Background Technology

[0002] Display devices are devices that display images, such as liquid crystal displays and organic light emitting diode displays.

[0003] An organic light-emitting display device comprises a plurality of transistors disposed on a substrate, a driving element including a plurality of conductors, and an organic light-emitting element. The organic light-emitting element may include two opposing electrodes and an organic light-emitting layer interposed between them. Electrons and holes provided from the two electrodes recombine in the organic light-emitting layer to generate excitons, and light may be emitted as the generated excitons change from an excited state to a ground state.

[0004] To improve the uniformity of brightness of light emitted by an organic light-emitting device, the surface of the organic insulating layer covering the driving element is flattened, thereby allowing easy control of the thickness of the pixel electrode and the light-emitting layer.

[0005] As a technique for planarizing the surface of an organic insulating layer, a chemical mechanical polishing (CMP) method in which mechanical polishing and chemical polishing are performed in parallel can be used.

[0006] To this end, a device for performing chemical mechanical polishing has as basic components a polishing pad, a chuck that fixes and rotates a substrate to be polished, and a slurry dispenser that supplies slurry. In some cases, the substrate is fixed and the polishing pad rotates to perform the planarization process. The problem to be solved

[0007] The embodiments are intended to provide a display device in which no slurry, polishing byproducts, etc. remain on the conductor of the driving element after the organic insulating layer polishing process. means of solving the problem

[0008] A display device according to one embodiment comprises a substrate; an inorganic insulating layer located on the substrate; a conductor located on the inorganic insulating layer; and an organic insulating layer located on the conductor and including an opening that partially exposes the upper surface of the conductor, wherein at least one of a disulfide including a siloxane, a thiol, a phosphate, and a sulfur-based amine is bonded to the conductor exposed through the opening.

[0009] The above conductor may include at least one of titanium (Ti), iron (Fe), nickel (Ni), copper (Cu), molybdenum (Mo), ITO, and IZO.

[0010] The substrate includes a display area and a non-display area surrounding the display area, and the conductor may include a first conductor located in the display area and a second conductor located in the non-display area.

[0011] In the above display area, a pixel electrode located on the organic insulating layer; a light-emitting layer located on the pixel electrode; and a common electrode located on the light-emitting layer are further included, and between the pixel electrode and the first conductor, at least one of a disulfide including a siloxane, a thiol, a phosphate, a sulfur-based compound, and an amine may be located.

[0012] In the above display area, the device further comprises a semiconductor layer located on the substrate; a gate insulating layer located on the semiconductor layer; a gate conductor located on the semiconductor layer; and a data conductor located on the gate conductor, wherein the data conductor includes the first conductor, and the inorganic insulating layer may be located between the gate conductor and the data conductor.

[0013] The first conductor can be electrically connected to the pixel electrode and the opening of the organic insulating layer.

[0014] The gate conductor includes a gate electrode, and the data conductor includes a drain electrode and a source electrode, and the gate electrode, the drain electrode, the source electrode and the semiconductor layer can form a transistor.

[0015] A method for manufacturing a display device according to one embodiment comprises the steps of: forming a conductor on a substrate; forming an organic insulating layer including an opening that partially exposes the upper surface of the conductor; depositing a sacrificial film to cover the surface of the organic insulating layer and the partially exposed upper surface of the conductor; polishing the upper surface of the organic insulating layer; and surface treating the sacrificial film on the side of the organic insulating layer and the upper surface of the conductor, wherein the sacrificial film comprises a self-assembled monolayer.

[0016] The self-assembled monolayer comprises a head group, a hydrocarbon chain, and a terminal functional group, and the head group may be at least one of siloxane, thiol, and phosphate.

[0017] The above functional group may be at least one of trifluoromethyl (-CF3), difluorocarben (-CF2), methyl (-CH3), methylene (-CH2), fluorine (-F), hydroxyl group (-OH), carbon (-C), and silicon (-Si).

[0018] The above sacrificial film can be deposited by thermal evaporation, liquid coating, chemical vapor deposition, physical vapor deposition, or sputtering.

[0019] In the step of depositing the sacrificial film, the upper surface of the organic insulating layer may include irregularities.

[0020] The coupling device may be located on the upper surface of the conductor on which the above surface treatment is completed.

[0021] The above conductor may include at least one of titanium (Ti), iron (Fe), nickel (Ni), copper (Cu), molybdenum (Mo), ITO, and IZO.

[0022] The organic insulating layer may include at least one organic material among acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin.

[0023] In the step of polishing the upper surface of the above organic insulating layer, a chemical mechanical polishing method may be used.

[0024] The above chemical mechanical polishing method can bring a polishing pad into contact with the upper surface of the organic insulating layer and supply a slurry together.

[0025] The above substrate includes a display area and a non-display area surrounding the display area, and may form a first conductor in the display area and a second conductor in the non-display area.

[0026] The polishing pad can overlap the display area and the non-display area.

[0027] In the above display area, a pixel electrode, a light-emitting layer, and a common electrode are formed on the organic insulating layer, and the coupling member may be located between the pixel electrode and the first conductor. Effects of the invention

[0028] According to the embodiments, by forming a sacrificial film on the surface of an organic insulating layer, performing a polishing process on the organic insulating layer, and then cleaning the sacrificial film, a display device can be provided in which no slurry, polishing byproducts, etc. remain on the conductor.

[0029] By forming a sacrificial film on the surface of the conductor and performing an organic insulating layer polishing process, the conductor can be protected by not directly exposing the surface of the conductor to the polishing pad. Brief explanation of the drawing

[0030] FIG. 1 is a schematic plan view of a display device according to one embodiment. FIG. 2 is a cross-sectional view showing a portion of the display area and non-display area of ​​a display device according to one embodiment. Figure 3 is the structure of a material forming a sacrificial film of a display device according to one embodiment. FIGS. 4 to 8 are a method for manufacturing a display device according to one embodiment. FIG. 9 is a schematic cross-sectional view of a display device according to one embodiment. Specific details for implementing the invention

[0031] Hereinafter, various embodiments of the present invention will be described in detail with reference to the attached drawings so that those skilled in the art can easily implement the present invention. The present invention may be embodied in various different forms and is not limited to the embodiments described herein.

[0032] To clearly explain the present invention, parts unrelated to the explanation have been omitted, and the same reference numerals are used for identical or similar components throughout the specification.

[0033] Furthermore, the size and thickness of each component shown in the drawings are depicted arbitrarily for convenience of explanation, and thus the present invention is not necessarily limited to what is illustrated. Thicknesses have been enlarged in the drawings to clearly represent various layers and regions. Additionally, for convenience of explanation, the thickness of some layers and regions has been exaggerated in the drawings.

[0034] Furthermore, when it is said that a part, such as a layer, membrane, region, or plate, is "on" or "on" another part, this includes not only the case where it is "directly above" the other part, but also the case where there is another part in between. Conversely, when it is said that a part is "directly above" another part, it means that there is no other part in between. Also, saying that a part is "on" or "on" a reference part means that it is located above or below the reference part, and does not necessarily mean that it is located "on" or "on" in the direction opposite to gravity.

[0035] Furthermore, throughout the specification, when a part is described as "including" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.

[0036] Additionally, throughout the specification, "planar" means when the subject part is viewed from above, and "cross-sectional" means when the cross-section obtained by vertically cutting the subject part is viewed from the side.

[0037] Hereinafter, a display device according to one embodiment will be described with reference to FIGS. 1 to 3.

[0038] FIG. 1 is a schematic plan view of a display device according to one embodiment, and FIG. 2 is a cross-sectional view showing a portion of the display area and non-display area of ​​a display device according to one embodiment. FIG. 3 is a structure of a material forming a sacrificial film in a display device according to one embodiment.

[0039] Referring to FIG. 1, a display device according to one embodiment includes a display area (DA) and a non-display area (NA).

[0040] A display area (DA) is an area where an image is displayed, comprising a plurality of pixels (PX), and a non-display area (NA) is an area where an image is not displayed. The non-display area (NA) may be an area surrounding the display area (DA). A plurality of pads (PADs) may be located in the non-display area (NA). The pads (PADs) may be electrically connected by an external driving circuit element, a flexible printed circuit board (FPCB), or a chip on film (COF), etc. According to an embodiment, a portion of the non-display area (NA) where the pads (PADs) are located may be bent.

[0041] A display device according to one embodiment may be an organic light-emitting display device comprising an organic light-emitting element disposed for each pixel (PX). According to an embodiment, the display device may be a liquid crystal display device.

[0042] Referring to FIG. 2, a display device according to one embodiment includes a substrate (100) and a display element (200) positioned on the substrate (100). The display element (200) includes a driving element and a light-emitting element (LED) comprising an inorganic insulating layer (160), a conductor (175, 177), and an organic insulating layer (180).

[0043] The substrate (100) may be a flexible substrate (100) made of glass or a polymer such as polyimide (PI), polyamide (PA), or polyethylene terephthalate (PET).

[0044] An inorganic insulating layer (160) and a first conductor (175) are located in the display area (DA) of the substrate (100), and a second conductor (177) is located in the non-display area (NA). The second conductor (177) may correspond to a pad (PAD) of FIG. 1 and may correspond to wiring located in the non-display area (NA). The first conductor (175) and the second conductor (177) may be referred to as conductors (175, 177). A buffer layer (120 in FIG. 9) and a gate insulating layer (140 in FIG. 9) may be located in the device portion (20) located between the substrate (100) and the inorganic insulating layer (160), and a semiconductor layer (130 in FIG. 9) may be located between the substrate (100) and the buffer layer (120), and a gate conductor (175, 177), etc. may be further located on the gate insulating layer (140). The inorganic insulating layer (160) may be positioned on the gate conductors (175, 177). A configuration that may be positioned between the substrate (100) and the inorganic insulating layer (160) will be described in detail in FIG. 9 below.

[0045] The first conductor (175) and the second conductor (177) may be formed as a single layer or a multilayer comprising at least one metal selected from titanium (Ti), gold (Au), copper (Cu), nickel (Ni), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), and tantalum (Ta) or alloys thereof. For example, when the first conductor (175) and the second conductor (177) are formed as a triple layer consisting of an upper layer, a middle layer, and a lower layer, the upper layer may comprise at least one of titanium (Ti), iron (Fe), nickel (Ni), copper (Cu), molybdenum (Mo), ITO, and IZO.

[0046] In the display area (DA), an organic insulating layer (180) is positioned over the first conductor (175) and the inorganic insulating layer (160). The organic insulating layer (180) is intended to flatten the surface of the substrate (100) on which the display element is provided, and may include one or more materials selected from the group consisting of acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. Additionally, in the non-display area (NA), the organic insulating layer (180) is positioned to partially overlap with the second conductor (177). The organic insulating layer (180) can flatten the upper surface of the pad (PAD), wiring, etc., thereby compensating for the step difference caused by the pad (PAD), wiring, driving part, etc.

[0047] The organic insulating layer (180) may include an opening (61) that partially exposes the upper surface of the first conductor (175). Additionally, the organic insulating layer (180) may include an opening (62) that partially exposes the upper surface of the second conductor (177). On the conductors (175, 177) exposed by the openings (61, 62) of the organic insulating layer (180), at least one of siloxane, thiol, phosphate, and disulfide including sulfur-based and amine compounds may be located. At least one of siloxane, thiol, phosphate, and disulfide including sulfur-based and amine materials may remain partially on the conductor (175, 177) without being completely removed by the cleaning process of the sacrificial film (300). Even if at least one of siloxane, thiol, phosphate, and disulfide including sulfur-based and amine materials remains on the conductor (175, 177), it does not affect the electrical performance of the conductor (175, 177).

[0048] A pixel electrode (191) is located on the organic insulating layer (180). In the display area (DA), the pixel electrode (191) can be electrically connected to a first conductor (175) through an opening (61) of the organic insulating layer (180). The first conductor (175) may be the drain electrode of a transistor. Between the pixel electrode (191) and the first conductor (175), at least one of siloxane, thiol, phosphate, and a disulfide including sulfur-based or amine materials may be located. However, these materials do not affect the electrical connection between the pixel electrode (191) and the first conductor (175).

[0049] A partition (360) is positioned over a pixel electrode (191) and an organic insulating layer (180), and includes an opening (361) in which the pixel electrode (191) is partially exposed. A light-emitting layer (370) is positioned in the opening (361) of the partition (360), and a common electrode (270) is positioned over the light-emitting layer (370). The pixel electrode (191), the light-emitting layer (370), and the common electrode (270) can form a light-emitting element (LED).

[0050] The material remaining on the upper surface of the conductors (175, 177) of FIG. 2 corresponds to the material forming the sacrificial film (300) described later. In this embodiment, the sacrificial film (300) is a self-assembled monolayer (SAM). Here, a self-assembled monolayer refers to a regularly well-aligned organic molecular film that is spontaneously deposited on the surface of a given substrate. The self-assembled monolayer may include organosilicon, thiol-based, amine-based, or silane-based organic materials. For example, trichloro[1H,1H,2H,2H-perfluorooctyl] silane (CF3(CF2)5CH2CH2SiCl3) or dodecanethiol (CH3(CH2) 11 SH) can be used as a self-assembled monolayer.

[0051] Referring to FIG. 3, the self-assembled monolayer includes a binder (310) (Head group), a hydrocarbon chain (311) (Hydrocarbon Chain), and a functional group (312) (Terminal functional group).

[0052] The bonding group (310) may be at least one of siloxane, thiol, phosphate, and disulfide including sulfur-based and amine compounds, and the functional group (312) may be at least one of trifluoromethyl (-CF3), difluorocarbene (-CF2), methyl (-CH3), methylene (-CH2), fluorine (-F), hydroxyl group (-OH), carbon (-C), and silicon (-Si). The bonding group (310) may be a material capable of maximizing bonding strength with a metal, and the functional group (312) may be a hydrophobic material. The bonding group (310) may have a high selectivity ratio to be specific to the metal. Thus, the bonding group (310) is bonded to the metal body, and the functional group (312) is located in the opposite direction of the metal body, so that a repulsive force can be exerted on water-soluble substances, etc. The metal bonded to the bonder (310) may be at least one metal selected from titanium (Ti), gold (Au), copper (Cu), nickel (Ni), silver (Ag), aluminum (Al), molybdenum (Mo), chromium (Cr), iron (Fe), ITO, IZO, and tantalum (Ta) or alloys thereof, and the water-soluble material with which the functional group (312) acts as a repulsive force may be a slurry. The self-assembled monolayer may be formed by a hydrogen reduction removal reaction following an oxidative addition reaction on the surface of the metal.

[0053] Below, with reference to FIGS. 4 and FIG. 8, we will examine a method for manufacturing a display device using a self-assembled monolayer.

[0054] FIGS. 4 to 8 are a method for manufacturing a display device according to one embodiment.

[0055] Referring to FIG. 4, a device part (20), an inorganic insulating layer (160), a conductor (175, 177), and an organic insulating layer (180) are sequentially formed on a substrate (100).

[0056] A first conductor (175) is formed in a display area (DA) of a substrate (100), an inorganic insulating layer (160) is formed on the first conductor (175), and an organic insulating layer (180) is formed on the inorganic insulating layer (160). A second conductor (177) is formed in a non-display area (NA) of a substrate (100), and an organic insulating layer (180) is formed on the second conductor (177).

[0057] The organic insulating layer (180) may have irregularities on its upper surface because the organic layer composition is applied and cured. The organic insulating layer (180) may include openings (61, 62) that are partially patterned to partially expose the upper surface of the conductor (175, 177). The organic insulating layer (180) may include at least one organic material among acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin, and the main curing of the organic layer composition may take place at a location corresponding to the openings (61, 62).

[0058] Referring to FIG. 5, a sacrificial film (300) is deposited to cover the exposed portions of the surface of the organic insulating layer (180) and the upper surface of the conductors (175, 177).

[0059] The sacrificial layer (300) utilizes the self-assembled monolayer shown in FIG. 3. The sacrificial layer (300) can be formed by a deposition process such as thermal evaporation, liquid coating, chemical vapor deposition (CVD), physical vapor deposition (PVD), or sputtering. The sacrificial layer (300) can protect the conductor (175, 177) during the process of polishing the organic insulating layer (180) described later.

[0060] In order to provide a flat upper surface, the organic insulating layer (180) requires a process of polishing the irregularities on the upper surface. While polishing the upper surface of the organic insulating layer (180), the sacrificial film (300) located on the upper surface of the organic insulating layer (180) can also be polished. The polishing process may utilize a chemical mechanical polishing (CMP) method in which mechanical polishing and chemical polishing are performed in parallel. Chemical mechanical polishing is a method in which a substrate (100) is polished by rotating contact with a polishing pad (PAD) while a slurry for chemical polishing is supplied simultaneously. The particulate material contained in the slurry is a compound capable of mechanically cutting the surface of the substrate (100), insulating layer, etc., or cutting by abrasive particles. The slurry may have a material selectivity ratio in which the organic insulating layer (180) is polished but the polishing of the conductor (175, 177) is suppressed, by including a substance that chemically inhibits polishing of the conductor (175, 177) pattern with a pH of 6.0 or higher. However, it is common to perform the polishing process using a wide polishing pad (PAD) that overlaps the display area (DA) and the non-display area (NA) so as to make contact with both the display area (DA) and the non-display area (NA). At this time, due to the step difference between the organic insulating layer (180) of the display area (DA) and the non-display area (NA), the polishing pad (PAD) may come into direct contact with the upper surface of the pad (PAD), and damage to the pad (PAD) may occur. Additionally, after the polishing process, the openings (61, 62) of the organic insulating layer (180) may not be cleaned properly, and the slurry on the upper surface of the conductor (175, 177) may not be removed.

[0061] On the other hand, in one embodiment, a sacrificial film (300) is deposited on the surface of the organic insulating layer (180) and the pad (PAD), so that damage to the pad (PAD) can be prevented during the polishing process.

[0062] In addition, the problem of the slurry not being removed from the openings (61, 62) of the organic insulating layer (180) can be solved.

[0063] Referring to FIG. 6, after the polishing process is performed, the surface of the organic insulating layer (180) is cleaned to remove slurry, polishing byproducts, etc. The sacrificial film (300) on the side of the organic insulating layer (180) and the upper surface of the conductors (175, 177) is removed by surface treatment.

[0064] By the polishing process, the upper surface of the organic insulating layer (180) is flattened, but slurry may remain on the sacrificial film (300) at the openings (61, 62) of the organic insulating layer (180). Additionally, slurry may remain on the sacrificial film (300) located on the upper surface of the conductors (175, 177). The sacrificial film (300) can be removed from the organic insulating layer (180) and the conductors (175, 177) by surface treatment. As the slurry remaining on the surface of the sacrificial film (300) is removed along with the removal of the sacrificial film (300), the display device according to one embodiment may not have slurry remaining on the openings of the organic insulating layer (180), the upper surface of the conductors (175, 177), etc. Surface treatment can be performed using atmospheric pressure plasma or plasma discharge, and argon (Ar), oxygen (O2), nitrogen (N2), etc., can be used as plasma reaction gases.

[0065] Referring to FIG. 7, a binder (310) of a sacrificial membrane (300) is located on the upper surface of a surface-treated conductor (175, 177).

[0066] If the bonding force between the coupling (310) and the surface of the conductor (175, 177) is greater than the bonding force between the coupling (310) and the hydrocarbon chain (311), the coupling (310) may remain on the upper surface of the conductor (175, 177). The coupling (310) located on the upper surface of the conductor (175, 177) is of a fine size of about 1 Å, and nothing may remain on the upper surface of the conductor (175, 177), and the sacrificial film (300) may be completely cleaned. Additionally, a portion of the sacrificial film (300) may remain on the upper surface of the organic insulating layer (180), but most of it can be easily removed because the bonding force between the coupling (310) and the organic insulating layer (180) is not greater than the bonding force between the coupling (310) and the hydrocarbon chain (311).

[0067] Referring to FIG. 8, in the display area (DA), a pixel electrode (191) and a partition (360) are formed on an organic insulating layer (180), a light-emitting layer (370) is formed on the pixel electrode (191), and a common electrode (270) is formed on the light-emitting layer (370) and the partition (360).

[0068] Since the upper surface of the organic insulating layer (180) is flat, the thickness of the pixel electrode (191) and the light-emitting layer (370) placed on the organic insulating layer (180) can be easily controlled. Accordingly, high resolution of the display device can be achieved, the brightness of the light emitted by the light-emitting element can be made uniform, and the pattern inside the display device can be prevented from being visible from the outside.

[0069] Below, with reference to FIG. 9, we will examine the display area of ​​a display device according to one embodiment.

[0070] FIG. 9 is a schematic cross-sectional view of a display device according to one embodiment. FIG. 9 is a cross-sectional view for showing an example of a stacked structure of a display area in a display device according to one embodiment, which may correspond to approximately one pixel area.

[0071] The display device includes a substrate (100), transistors (124, 130, 173, 175) formed on the substrate (100), and light-emitting elements (LEDs) connected to the transistors (124, 130, 173, 175). Some of the transistors may be included in the element portion (20) of FIGS. 2 to 8.

[0072] The substrate (100) may be a flexible substrate (100) and may include a barrier layer to prevent moisture, oxygen, etc. from penetrating from the outside.

[0073] A buffer layer (120) is positioned on the substrate (100). The buffer layer (120) blocks impurities that may diffuse from the substrate (100) to the semiconductor layer (130) during the process of forming the semiconductor layer (130), and can reduce the stress on the substrate (100). The barrier layer and the buffer layer (120) may include inorganic insulating materials such as silicon oxide (SiOx) and silicon nitride (SiNx).

[0074] A semiconductor layer (130) of a transistor is located on the buffer layer (120), and a gate insulating layer (140) is located on the semiconductor layer (130). The semiconductor layer (130) includes a source region (132), a drain region (133), and a channel region (131) between these regions. The semiconductor layer (130) may include polycrystalline silicon, oxide semiconductor, amorphous silicon, etc.

[0075] A gate conductor including a gate electrode (124) and a gate wire of a transistor may be positioned on the gate insulating layer (140). The gate conductor may include a metal or metal alloy such as molybdenum (Mo), copper (Cu), aluminum (Al), silver (Ag), chromium (Cr), tantalum (Ta), and titanium (Ti).

[0076] An inorganic insulating layer (160) is located on the gate electrode (124). The inorganic insulating layer (160) may be an interlayer insulating layer containing an inorganic insulating material.

[0077] A data conductor (173, 175), including a source electrode (173) and a drain electrode (175) of a transistor, a data line, a driving voltage line, etc., may be located on the inorganic insulating layer (160). The source electrode (173) and the drain electrode (175) may be connected to the source region (132) and the drain region (133) of the semiconductor layer (130), respectively, through the openings of the gate insulating layer (140) and the inorganic insulating layer (160). The data conductor (173, 175) may include a metal or a metal alloy such as aluminum (Al), copper (Cu), silver (Ag), molybdenum (Mo), chromium (Cr), gold (Au), platinum (Pt), palladium (Pd), tantalum (Ta), tungsten (W), titanium (Ti), nickel (Ni), ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide).

[0078] An organic insulating layer (180) may be positioned on top of the inorganic insulating layer (160) and the data conductor (173, 175). The organic insulating layer (180) may flatten the surface on which the light-emitting element (LED) is to be formed in order to increase the light-emitting efficiency of the light-emitting element (LED) to be formed thereon.

[0079] A light-emitting element (LED) including a pixel electrode (191), a light-emitting layer (370), and a common electrode (270) is positioned on the organic insulating layer (180).

[0080] An encapsulation layer (400) may be positioned on top of a light-emitting element (LED). The encapsulation layer (400) can encapsulate the light-emitting element (LED) to prevent moisture or oxygen from penetrating from the outside. The encapsulation layer (400) may include one or more layers of inorganic material and one or more layers of organic material, and the layers of inorganic material and organic material may be stacked alternately.

[0081] Although embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements by those skilled in the art using the basic concept of the present invention as defined in the following claims also fall within the scope of the present invention. Explanation of the symbols

[0082] 100: Substrate 120: Buffer layer 130: Semiconductor layer 140: Gate insulating layer 160: Inorganic insulating layer 180: Organic insulating layer 124: Gate electrode 173: Source electrode 175: Drain electrode 191: Pixel electrode 370: Emitting layer 270: Common electrode 360: Partition 400: Encapsulation layer 300: Sacrifice screen

Claims

Claim 1 A display device comprising: a substrate; an inorganic insulating layer located on the substrate; a conductor located on the inorganic insulating layer; and an organic insulating layer located on the conductor and including an opening that partially exposes the upper surface of the conductor, wherein a portion of a self-assembled monolayer is located on the conductor exposed through the opening, and the portion of the self-assembled monolayer is composed of a linker comprising at least one of a siloxane, a thiol, a phosphate, and a disulfide including a sulfur-based or amine. Claim 2 In claim 1, the conductor comprises at least one of titanium (Ti), iron (Fe), nickel (Ni), copper (Cu), molybdenum (Mo), ITO, and IZO. Claim 3 In paragraph 2, the substrate comprises a display area and a non-display area surrounding the display area, and the conductor comprises a first conductor located in the display area and a second conductor located in the non-display area. Claim 4 A display device according to claim 3, further comprising, in the display area, a pixel electrode located on the organic insulating layer; a light-emitting layer located on the pixel electrode; and a common electrode located on the light-emitting layer, wherein at least one of a siloxane, a thiol, a phosphate, and a disulfide including a sulfur-based or amine is located between the pixel electrode and the first conductor. Claim 5 In claim 4, the display device further comprises, in the display area, a semiconductor layer located on the substrate; a gate insulating layer located on the semiconductor layer; a gate conductor located on the semiconductor layer; and a data conductor located on the gate conductor, wherein the data conductor includes the first conductor, and the inorganic insulating layer is located between the gate conductor and the data conductor. Claim 6 In paragraph 5, the first conductor is electrically connected to the pixel electrode and the organic insulating layer through an opening in the display device. Claim 7 In claim 5, the gate conductor includes a gate electrode, the data conductor includes a drain electrode and a source electrode, and the gate electrode, the drain electrode, the source electrode and the semiconductor layer constitute a display device that forms a transistor. Claim 8 A method for manufacturing a display device comprising the steps of: forming a conductor on a substrate; forming an organic insulating layer including an opening that partially exposes the upper surface of the conductor; depositing a sacrificial film to cover the surface of the organic insulating layer and the partially exposed upper surface of the conductor; polishing the upper surface of the organic insulating layer; and surface treating the sacrificial film located on the side of the organic insulating layer and on the upper surface of the conductor, wherein the sacrificial film comprises a self-assembled monolayer, and the self-assembled monolayer comprises a head group, a hydrocarbon chain, and a terminal functional group, wherein a portion of the self-assembled monolayer is located on the upper surface of the conductor after the surface treatment is completed, and a portion of the self-assembled monolayer is composed of the head group. Claim 9 A method for manufacturing a display device according to claim 8, wherein the linker is at least one of siloxane, thiol, and phosphate. Claim 10 A method for manufacturing a display device according to claim 9, wherein the functional group is at least one of trifluoromethyl (-CF3), difluorocarben (-CF2), methyl (-CH3), methylene (-CH2), fluorine (-F), hydroxyl group (-OH), carbon (-C), and silicon (-Si). Claim 11 In claim 9, a method for manufacturing a display device wherein the sacrificial film is deposited by thermal evaporation, liquid coating, chemical vapor deposition, physical vapor deposition, or sputtering. Claim 12 In claim 9, a method for manufacturing a display device wherein, in the step of depositing the sacrificial film, the upper surface of the organic insulating layer includes irregularities. Claim 13 delete Claim 14 In claim 8, the method for manufacturing a display device wherein the conductor comprises at least one of titanium (Ti), iron (Fe), nickel (Ni), copper (Cu), molybdenum (Mo), ITO, and IZO. Claim 15 A method for manufacturing a display device according to claim 8, wherein the organic insulating layer comprises at least one organic material selected from acrylic resin, epoxy resin, phenolic resin, polyamide resin, or polyimide resin. Claim 16 A method for manufacturing a display device according to claim 8, wherein in the step of polishing the upper surface of the organic insulating layer, a chemical mechanical polishing method is used. Claim 17 In claim 16, the chemical mechanical polishing method is a method for manufacturing a display device in which a polishing pad is brought into contact with the upper surface of the organic insulating layer and a slurry is supplied together. Claim 18 In claim 17, a method for manufacturing a display device wherein the substrate comprises a display area and a non-display area surrounding the display area, and a first conductor is formed in the display area and a second conductor is formed in the non-display area. Claim 19 In claim 18, the polishing pad is a method for manufacturing a display device that overlaps the display area and the non-display area. Claim 20 A method for manufacturing a display device according to claim 18, wherein, in the above-mentioned display area, a pixel electrode, a light-emitting layer, and a common electrode are formed on the organic insulating layer, and the coupling is located between the pixel electrode and the first conductor.

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