Sensor and electronic device

Abstract

The present invention relates to a sensor and an electronic device comprising a first electrode and a second electrode, and an infrared photoelectric conversion layer located between the first electrode and the second electrode that absorbs light in at least a portion of the infrared wavelength region and converts it into an electrical signal, wherein the infrared photoelectric conversion layer comprises a first material having a maximum absorption wavelength in the infrared wavelength region, a second material forming a pn junction with the first material, and a third material having an energy bandgap that is at least 1.0 eV larger than the energy bandgap of the first material, wherein the first material, the second material, and the third material are different from each other and are each nonpolymer materials.

Description

Technology Field

[0001] It is about sensors and electronic devices. Background Technology

[0003] Digital cameras and camcorders use an image sensor that captures images and stores them as electrical signals, and the image sensor includes a sensor that separates incident light according to wavelength and converts each component into an electrical signal.

[0004] Recently, infrared sensors are being researched to improve sensor sensitivity in low-light environments or to be used as biometric recognition or authentication devices. The problem to be solved

[0006] One embodiment provides a sensor exhibiting improved electrical characteristics.

[0007] Another embodiment provides an electronic device including the sensor. means of solving the problem

[0009] According to one embodiment, the sensor comprises a first electrode and a second electrode, and an infrared photoelectric conversion layer located between the first electrode and the second electrode that absorbs light in at least a portion of the infrared wavelength region and converts it into an electrical signal, wherein the infrared photoelectric conversion layer comprises a first material having a maximum absorption wavelength in the infrared wavelength region, a second material forming a pn junction with the first material, and a third material having an energy bandgap that is at least 1.0 eV larger than the energy bandgap of the first material, and wherein the first material, the second material, and the third material are different from each other and each is a nonpolymer material.

[0010] The difference between the HOMO energy level of the first material and the HOMO energy level of the third material may be less than about 1.0 eV.

[0011] The difference between the HOMO energy level of the second material and the HOMO energy level of the first material may be about 0.5 eV or more.

[0012] The energy bandgap of the first material may be about 0.5 eV to 1.8 eV, and the energy bandgap of the third material may be about 2.8 eV to 4.0 eV.

[0013] The energy band gap of the third material may be larger than the energy band gap of the second material.

[0014] The first substance may be contained in less than the second substance.

[0015] The composition ratio of the first material to the second material may be about 0.10:1 to 0.90:1.

[0016] The composition ratio of the first material to the second material may be about 0.10:1 to 0.50:1.

[0017] The first substance and the third substance may each be contained in smaller amounts than the second substance.

[0018] The third material may be included in an amount of about 1 to 40 volume% with respect to the total volume of the infrared photoelectric conversion layer.

[0019] The above third material may be included in an amount of about 7 to 25 volume% with respect to the total volume of the infrared photoelectric conversion layer.

[0020] The maximum absorption wavelength of the infrared photoelectric conversion layer may be longer than the maximum absorption wavelength of the first material.

[0021] The maximum absorption wavelength or maximum external quantum efficiency wavelength of the infrared photoelectric conversion layer can shift in the direction of longer wavelengths as the content of the third material increases.

[0022] The above third substance may be an organic material.

[0023] The above third substance can be represented by the following chemical formula 1.

[0024] [Chemical Formula 1]

[0025]

[0026] In the above chemical formula 1,

[0027] L 1 and L 2 Each may independently be a single bond, a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C6 to C30 arylene group, or a combination thereof, and

[0028] Ar 1 or Ar 4 Each may be an independently substituted or unsubstituted C6 to C30 aryl group, and

[0029] Ar 1 and Ar 2 Each can exist independently or combine with others to form a ring, and

[0030] Ar 3 and Ar 4 Each can exist independently or combine with others to form a ring, and

[0031] R 1 to R 4 Each may independently be hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted amine group, a substituted or unsubstituted C6 to C30 arylamine group, a halogen, a cyano group, or a combination thereof, and

[0032] R 1 to R 4 Each can exist independently or two adjacent ones can combine to form a ring, and

[0033] m is an integer from 0 to 2.

[0034] The above third substance may be represented by any one of the following chemical formulas 1-1 to 1-8.

[0035] [Chemical Formula 1-1] [Chemical Formula 1-2]

[0036]

[0037] [Chemical Formula 1-3] [Chemical Formula 1-4]

[0038]

[0039] [Chemical Formula 1-5] [Chemical Formula 1-6]

[0040]

[0041] [Chemical Formula 1-7] [Chemical Formula 1-8]

[0042]

[0043] In the above chemical formulas 1-1 to 1-8,

[0044] R 1 to R 22 Each may independently be hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted amine group, a substituted or unsubstituted C6 to C30 arylamine group, a halogen, a cyano group, or a combination thereof, and

[0045] R 1 to R 22 Each can exist independently or two adjacent ones can combine to form a ring, and

[0046] m is 1 or 2.

[0047] The infrared photoelectric conversion layer may include a mixture of the first material, the second material, and the third material.

[0048] The infrared photoelectric conversion layer may be a ternary system composed of the first material, the second material, and the third material.

[0049] The maximum external quantum efficiency wavelength of the infrared photoelectric conversion layer may be approximately 800 nm to 1500 nm.

[0050] The sensor may further include a first auxiliary layer located between the first electrode and the infrared photoelectric conversion layer, and the first auxiliary layer may include a fourth material that is the same as or different from the third material, the energy bandgap of the fourth material may be about 1.0 eV or more larger than the energy bandgap of the first material, and the HOMO energy level of the fourth material may be located between the work function of the first electrode and the HOMO energy level of the first material.

[0051] According to another embodiment, a sensor is provided comprising a first electrode and a second electrode and an infrared photoelectric conversion layer located between the first electrode and the second electrode, wherein the infrared photoelectric conversion layer comprises a mixture of a first material having a maximum absorption wavelength in the infrared wavelength region, a second material forming a pn junction with the first material, and a third material represented by Chemical Formula 1, and wherein the maximum absorption wavelength of the infrared photoelectric conversion layer is longer than the maximum absorption wavelength of the first material.

[0052] The maximum absorption wavelength of the infrared photoelectric conversion layer may be at least 30 nm longer than the maximum absorption wavelength of the first material.

[0053] The maximum absorption wavelength or maximum external quantum efficiency wavelength of the infrared photoelectric conversion layer may shift in the direction of longer wavelengths as the content of the third material increases.

[0054] The third material may be included in an amount of about 1 to 40 volume% with respect to the total volume of the infrared photoelectric conversion layer.

[0055] The above third material may be included in an amount of about 7 to 25 volume% with respect to the total volume of the infrared photoelectric conversion layer.

[0056] The maximum absorption wavelength of the first material may be in the range of about 750 nm to 1200 nm, and the maximum absorption wavelength of the infrared photoelectric conversion layer may be in the range of about 1000 nm to 1500 nm.

[0057] The above third substance may be represented by any one of the above chemical formulas 1-1 to 1-8.

[0058] The first material may include a metal phthalocyanine complex or a metal naphthalocyanine complex.

[0059] According to another embodiment, an electronic device including the sensor is provided. Effects of the invention

[0061] Under reverse bias voltage, the sensor's dark current can be lowered and optical characteristics improved. Brief explanation of the drawing

[0063] FIG. 1 is a cross-sectional view showing an example of an infrared sensor according to one embodiment, and FIG. 2 is a cross-sectional view showing another example of an infrared sensor according to one embodiment, and FIG. 3 is a cross-sectional view showing an example of a sensor according to one embodiment, and FIG. 4 is a cross-sectional view showing an example of a sensor according to another embodiment, and FIG. 5 is a cross-sectional view showing an example of a sensor according to another embodiment, and FIG. 6 is a cross-sectional view showing an example of a sensor according to another embodiment, and FIG. 7 is a cross-sectional view showing an example of a sensor according to another embodiment, and FIG. 8 is a cross-sectional view showing an example of a sensor according to another embodiment, and FIG. 9 is a perspective view showing an example of a sensor according to another embodiment, and FIG. 10 is a cross-sectional view showing an example of the sensor of FIG. 9, and FIG. 11 is a perspective view showing an example of a sensor according to another embodiment, and FIG. 12 is a cross-sectional view showing an example of the sensor of FIG. 11, and Figure 13 is a schematic diagram of an electronic device according to one example. Specific details for implementing the invention

[0064] Hereinafter, embodiments are described in detail so that those skilled in the art can easily implement them. However, they may be implemented in various different forms and are not limited to the embodiments described herein.

[0065] In the drawings, thicknesses have been enlarged to clearly represent various layers and regions. Throughout the specification, the same reference numerals have been used for similar parts. When a part such as a layer, film, region, or plate is described as being "on" another part, this includes not only cases where it is "immediately on" another part, but also cases where there is another part in between. Conversely, when a part is described as being "immediately on" another part, it means that there is no other part in between.

[0066] Unless otherwise defined below, "substituted" means that a hydrogen atom in a compound is a halogen atom, a hydroxyl group, an alkoxy group, a nitro group, a cyano group, an amino group, an azido group, an amidino group, a hydrazino group, a hydrazono group, a carbonyl group, a carbamyl group, a thiol group, an ester group, a carboxyl group or its salt, a sulfonic acid group or its salt, a phosphoric acid group or its salt, a silyl group, a C1 to C20 alkyl group, a C2 to C20 alkenyl group, a C2 to C20 alkynyl group, a C6 to C30 aryl group, a C7 to C30 arylalkyl group, a C1 to C30 alkoxy group, a C1 to C30 thioalkoxy group, a C1 to C20 heteroalkyl group, a C3 to C20 heterocyclic group, a C3 to C20 heteroarylalkyl group, a C3 to C30 cycloalkyl group, or a C3 to C15 It means substituted with a substituent selected from a cycloalkenyl group, a C6 to C15 cycloalkenyl group, a C3 to C30 heterocycloalkyl group, and combinations thereof.

[0067] Unless otherwise defined below, 'hetero' means containing 1 to 4 heteroatoms selected from N, O, S, Se, Te, Si and P.

[0068] Unless otherwise defined below, "aryl group" is a collective concept for a group having one or more hydrocarbon aromatic moietys, including a form in which all elements of the hydrocarbon aromatic moiety have p-orbitals and these p-orbitals form a conjugation, such as a phenyl group, a naphthyl group, etc., and a form in which two or more hydrocarbon aromatic moietys are connected through sigma bonds, such as a biphenyl group, a terphenyl group, a quarterphenyl group, etc., and a non-aromatic fused ring in which two or more hydrocarbon aromatic moietys are directly or indirectly fused, such as a fluorenyl group, etc. The aryl group may include monocyclic, polycyclic, or fused polycyclic (i.e., a ring sharing adjacent pairs of carbon atoms) functional groups.

[0069] Unless otherwise defined below, “heterocycle” or “heterocyclic group” is a superordinate concept including “heteroaryl group,” meaning that the ring contains at least one heteroatom selected from the group consisting of N, O, S, Se, Te, P, and Si instead of carbon (C). If the heterocycle is a fused ring, it may have at least one heteroatom in the heterocycle and may have a heteroatom in each ring.

[0070] In the following, the values ​​of the work function, HOMO energy level, or LUMO energy level are expressed as absolute values ​​from the vacuum level. Also, a work function, HOMO energy level, or LUMO energy level being deep, high, or large means that the absolute value is large with the vacuum level set to '0 eV', and a work function, HOMO energy level, or LUMO energy level being shallow, low, or small means that the absolute value is small with the vacuum level set to '0 eV'.

[0071] In the following, the HOMO energy level is obtained by measuring a film formed from the material at room temperature using a photoelectron spectrometer (RIKEN KEIKI Co. Ltd., AC-3). Additionally, the light absorption of the film is measured using a UV-Visible Spectrophotometer (UPS), and the energy band gap is extracted. The value obtained by subtracting the previously measured HOMO energy level from the energy band gap is defined as the LUMO energy level.

[0072] In the following, the energy bandgap refers to the absolute value of the difference between the HOMO energy level and the LUMO energy level, and an energy bandgap being wide or large means that the absolute value of the difference between the HOMO energy level and the LUMO energy level is large.

[0073] Hereinafter, the wavelength at the point where light absorption is maximum in the optical absorption spectrum is referred to as the “maximum absorption wavelength,” and the wavelength at the point where the external quantum efficiency (EQE) is maximum in the external quantum efficiency spectrum (EQE spectrum) is referred to as the “maximum external quantum efficiency wavelength” or “maximum EQE wavelength.” Under the same conditions, the maximum external quantum efficiency wavelength or the maximum EQE wavelength may be the same as the maximum absorption wavelength and may be used interchangeably.

[0074] In the following, "non-polymer material" may be an organic material that does not have repeating units, and may be an organic material having a molecular weight of, for example, about 3000 g / mol or less, about 2500 g / mol or less, about 2000 g / mol or less, or about 1500 g / mol or less. "Non-polymer material" may be a low molecular weight compound having a molecular weight within the above ranges.

[0075] In the following, "combination" includes a mixture or two or more stacked structures.

[0076] A sensor according to one embodiment is described below.

[0077] A sensor according to one embodiment includes a sensor (hereinafter referred to as an "infrared sensor") that detects light in at least some wavelength regions of an infrared wavelength region. The infrared sensor may be, for example, a sensor that senses light in at least some of a near infrared wavelength region, a short wave infrared wavelength region, a mid wave infrared wavelength region, and a long wave infrared wavelength region, and may be, for example, a sensor that senses light in at least some of a near infrared wavelength region and a short wave infrared wavelength region.The infrared wavelength range may fall, for example, in the range of approximately 700 nm to 3000 nm or less, and within the above range, for example, approximately 750 nm to 3000 nm, approximately 750 nm to 2500 nm, approximately 750 nm to 2300 nm, approximately 750 nm to 2000 nm, approximately 750 nm to 1800 nm, approximately 750 nm to 1500 nm, approximately 750 nm to 1300 nm, approximately 750 nm to 1200 nm, approximately 750 nm to 1100 nm, approximately 750 nm to 1000 nm, approximately 800 nm to 3000 nm, approximately 800 nm to 2500 nm, approximately 800 nm to 2300 nm, approximately 800 nm to 2000 nm, approximately 800 nm to 1800 nm, approximately 800 nm to It may fall within 1500 nm, approximately 800 nm to 1300 nm, approximately 800 nm to 1200 nm, approximately 800 nm to 1100 nm, approximately 800 nm to 1000 nm, approximately 850 nm to 3000 nm, approximately 850 nm to 2500 nm, approximately 850 nm to 2300 nm, approximately 850 nm to 2000 nm, approximately 850 nm to 1800 nm, approximately 850 nm to 1500 nm, approximately 850 nm to 1300 nm, approximately 850 nm to 1200 nm, approximately 850 nm to 1100 nm, or approximately 850 nm to 1000 nm. The absorption spectrum of the infrared sensor may have a maximum absorption wavelength in the above wavelength range. An infrared sensor can selectively absorb light in the above wavelength range and convert it into an electrical signal. The external quantum efficiency (EQE) spectrum of the infrared sensor can have a maximum EQE wavelength in the above wavelength range.

[0078] Each infrared sensor may independently include a light-sensing element such as a photodiode or a photoelectric conversion device.

[0079] FIG. 1 is a cross-sectional view showing an example of an infrared sensor according to one embodiment.

[0080] Referring to FIG. 1, an infrared sensor (100) according to one embodiment includes a first electrode (110) and a second electrode (120) facing each other, and an infrared photoelectric conversion layer (130) located between the first electrode (110) and the second electrode (120).

[0081] A substrate (not shown) may be placed on the side of the first electrode (110) or on the side of the second electrode (120). The substrate may be made of an inorganic material such as glass, an organic material such as polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, polyethersulfone, or a combination thereof, or a silicon wafer, etc. The substrate may be omitted.

[0082] One of the first electrode (110) and the second electrode (120) is an anode and the other is a cathode. For example, the first electrode (110) may be an anode and the second electrode (120) may be a cathode. For example, the first electrode (110) may be a cathode and the second electrode (120) may be an anode.

[0083] At least one of the first electrode (110) and the second electrode (120) may be a transparent electrode or a semi-transparent electrode.

[0084] The transparent electrode may have a transmittance of about 80% or more, and within the above range, may have a transmittance of about 85% or more, about 88% or more, about 90% or more, about 92% or more, about 95% or more, or about 97% or more. The transparent electrode may include, for example, at least one of an oxide conductor, a carbon conductor, and / or a metal thin film. The oxide conductor may be, for example, one or more selected from indium tin oxide (ITO), indium zinc oxide (IZO), zinc tin oxide (ZTO), aluminum tin oxide (AlTO), and aluminum zinc oxide (AZO); the carbon conductor may be one or more selected from graphene and carbon nanomaterials; and the metal thin film may be, for example, a metal thin film formed with a thickness of several nanometers to tens of nanometers, or a single layer or multiple layers of metal thin films formed with a thickness of several nanometers to tens of nanometers doped with a metal oxide.

[0085] The semitransparent electrode may have a transmittance of about 10 to 70%, about 20 to 60%, or about 30 to 50%, and may selectively transmit light in a predetermined wavelength range and reflect or absorb light in other wavelength ranges. The semitransparent electrode may include a thin metal layer or alloy layer with a thickness of, for example, about 1 nm to 50 nm, and may include, for example, silver (Ag), copper (Cu), aluminum (Al), magnesium (Mg), ytterbium (Yb), magnesium-silver (Mg-Ag), magnesium-aluminum (Mg-Al), or a combination thereof, but is not limited thereto.

[0086] Either of the first electrode (110) and the second electrode (120) may be a reflective electrode. The reflective electrode may include a reflective layer and may have a low transmittance of, for example, less than 10% or less than 5%. The reflective electrode may include a reflective conductor such as, for example, a metal, and may include, for example, silver (Ag), copper (Cu), aluminum (Al), gold (Au), titanium (Ti), chromium (Cr), nickel (Ni), ytterbium (Yb), alloys thereof, nitrides thereof (e.g., TiN), or combinations thereof, but is not limited thereto.

[0087] For example, the first electrode (110) and the second electrode (120) may each be a transparent electrode or a translucent electrode. For example, the first electrode (110) may be a reflective electrode and the second electrode (120) may be a transparent electrode or a translucent electrode. For example, the first electrode (110) may be a transparent electrode or a translucent electrode and the second electrode (120) may be a reflective electrode.

[0088] The infrared photoelectric conversion layer (130) can absorb light in at least some wavelength regions of the infrared wavelength region and convert it into an electrical signal. The absorption spectrum of the infrared photoelectric conversion layer (130) is, for example, a maximum absorption wavelength (λ) in the wavelength region of approximately 700 nm to 3000 nm. max,A It may have ), and the maximum absorption wavelength may fall within the above range, for example, about 750 nm to 3000 nm, about 750 nm to 2500 nm, about 750 nm to 2300 nm, about 750 nm to 2000 nm, about 750 nm to 1800 nm, about 750 nm to 1500 nm, about 750 nm to 1300 nm, about 750 nm to 1200 nm, about 750 nm to 1100 nm, or about 750 nm to 1000 nm.

[0089] The EQE spectrum of the infrared photoelectric conversion layer (130) may have a maximum EQE wavelength in a wavelength region of, for example, greater than about 700 nm and less than or equal to about 3000 nm, and the maximum EQE wavelength may fall within the above range, for example, in a wavelength region of about 750 nm to 3000 nm, about 750 nm to 2500 nm, about 750 nm to 2300 nm, about 750 nm to 2000 nm, about 750 nm to 1800 nm, about 750 nm to 1500 nm, about 750 nm to 1300 nm, about 750 nm to 1200 nm, about 750 nm to 1100 nm, or about 750 nm to 1000 nm.

[0090] The infrared photoelectric conversion layer (130) may include at least one first material (130a) and at least one second material (130b) that form a pn junction. The first material (130a) and the second material (130b) are different from each other, and one of the first material (130a) and the second material (130b) may be a p-type semiconductor and the other may be an n-type semiconductor. For example, the first material (130a) may be a p-type semiconductor and the second material (130b) may be an n-type semiconductor. For example, the first material (130a) may be an n-type semiconductor and the second material (130b) may be a p-type semiconductor.

[0091] The first material (130a) and the second material (130b) may each be an organic material, an inorganic material, or an organic-inorganic material, for example, at least one of the first material (130a) and the second material (130b) may be an organic material. For example, the first material (130a) and the second material (130b) may each be a non-polymeric material and may be a depositional compound. At least one of the first material (130a) and the second material (130b) may be a light-absorbing material, for example, the first material (130a) and the second material (130b) may each be a light-absorbing material.

[0092] The first substance (130a) and the second substance (130b) may have different absorption characteristics. For example, the absorption spectrum of the first substance (130a) and the absorption spectrum of the second substance (130b) may be different. For example, the maximum absorption wavelength of the absorption spectrum of the first substance (130a) and the maximum absorption wavelength of the absorption spectrum of the second substance (130b) may be different. For example, the absorption spectrum of the first substance (130a) may be located in a longer wavelength region than the absorption spectrum of the second substance (130b), and the maximum absorption wavelength of the absorption spectrum of the first substance (130a) may be longer than the maximum absorption wavelength of the absorption spectrum of the second substance (130b).

[0093] For example, the first material (130a) may be an infrared absorbing material that mainly absorbs light in the infrared wavelength region, and the maximum absorption wavelength of the absorption spectrum of the first material (130a) may be in the infrared wavelength region. The maximum absorption wavelength of the absorption spectrum of the first material (130a) may fall, for example, in the range of approximately 700 nm to 3000 nm, and within the above range, for example, approximately 750 nm to 3000 nm, approximately 750 nm to 2500 nm, approximately 750 nm to 2300 nm, approximately 750 nm to 2000 nm, approximately 750 nm to 1800 nm, approximately 750 nm to 1500 nm, approximately 750 nm to 1300 nm, approximately 750 nm to 1200 nm, approximately 750 nm to 1100 nm, approximately 750 nm to 1000 nm, approximately 800 nm to 3000 nm, approximately 800 nm to 2500 nm, approximately 800 nm to 2300 nm, approximately 800 nm to 2000 nm, approximately 800 nm to It may fall within 1800 nm, about 800 nm to 1500 nm, about 800 nm to 1300 nm, about 800 nm to 1200 nm, about 800 nm to 1100 nm, about 800 nm to 1000 nm, about 850 nm to 3000 nm, about 850 nm to 2500 nm, about 850 nm to 2300 nm, about 850 nm to 2000 nm, about 850 nm to 1800 nm, about 850 nm to 1500 nm, about 850 nm to 1300 nm, about 850 nm to 1200 nm, about 850 nm to 1100 nm, or about 850 nm to 1000 nm.

[0094] For example, the second material (130b) may not be an infrared absorbing material that primarily absorbs light in the infrared wavelength region, and for example, the maximum absorption wavelength of the absorption spectrum of the second material (130b) may not belong to the infrared wavelength region. For example, the second material (130b) may be a visible light absorbing material that primarily absorbs light in the visible light wavelength region, and the maximum absorption wavelength of the absorption spectrum of the second material (130b) may belong to the visible light wavelength region. The visible light wavelength region may be, for example, about 380 nm or more and less than 700 nm, and within the above range, may be, for example, about 380 nm to 680 nm.

[0095] The first material (130a) and the second material (130b) may have different electrical properties, for example, the energy diagram of the first material (130a) and the energy diagram of the second material (130b) may be different.

[0096] For example, the first material (130a) may have a relatively shallow HOMO energy level, and for example, the HOMO energy level of the first material (130a) may be about 4.5 eV to 5.5 eV. The HOMO energy level of the second material (130b) may be deeper than the HOMO energy level of the first material (130a), for example, the difference between the HOMO energy level of the second material (130a) and the HOMO energy level of the first material (130a) may be about 0.5 eV or more, and within the above range may be about 0.7 eV or more, about 0.8 eV or more, about 0.9 eV or more, or about 1.0 eV or more, for example, about 0.5 eV to 2.0 eV, about 0.5 eV to 1.8 eV, about 0.5 eV to 1.7 eV, about 0.5 eV to 1.5 eV, about 0.7 eV to 2.0 eV, about 0.7 eV to 1.8 eV, about 0.7 eV to 1.7 eV, about 0.7 eV to It may be 1.5 eV, about 0.8 eV to 2.0 eV, about 0.8 eV to 1.8 eV, about 0.8 eV to 1.7 eV, or about 0.8 eV to 1.5 eV, about 0.9 eV to 2.0 eV, about 0.9 eV to 1.8 eV, about 0.9 eV to 1.7 eV, or about 0.9 eV to 1.5 eV, about 1.0 eV to 2.0 eV, about 1.0 eV to 1.8 eV, about 1.0 eV to 1.7 eV, or about 1.0 eV to 1.5 eV. For example, the HOMO energy level of the second material (130b) may be about 5.6 eV to 7.0 eV.

[0097] For example, the LUMO energy level of the first material (130a) may be about 3.0 eV to 4.5 eV. The LUMO energy level of the second material (130b) may be deeper or shallower than the LUMO energy level of the first material (130a), for example, the LUMO energy level of the second material (130b) may be about 3.6 eV to 5.0 eV.

[0098] For example, the energy bandgap of the first material (130a) may be relatively narrow. The energy bandgap of the first material (130a) may be, for example, about 1.8 eV or less, about 1.7 eV or less, about 1.6 eV or less, about 1.5 eV or less, about 1.4 eV or less, about 1.3 eV or less, or about 1.2 eV or less, and within the above range may be, for example, about 0.5 eV to 1.8 eV, about 0.5 eV to 1.7 eV, about 0.5 eV to 1.6 eV, about 0.5 eV to 1.5 eV, about 0.5 eV to 1.4 eV, about 0.5 eV to 1.3 eV, or about 0.5 eV to 1.2 eV.

[0099] For example, the energy bandgap of the second material (130b) may be wider than the energy bandgap of the first material (130a). The energy bandgap of the second material (130b) may be, for example, about 0.3 eV or more wider than the energy bandgap of the first material (130a), and within the above range, about 0.5 eV or more, about 0.7 eV or more, about 0.8 eV or more, or about 1.0 eV or more, and for example, 0.3 eV to 2.0 eV, about 0.5 eV to 2.0 eV, about 0.7 eV to 2.0 eV, about 0.8 eV to 2.0 eV, or about 1.0 eV to 2.0 eV wider. For example, the energy bandgap of the second material (130b) may be about 0.8 eV to 2.4 eV.

[0100] For example, the first material (130a) may be selected from materials satisfying the aforementioned optical and electrical properties, and may include, for instance, a metal phthalocyanine complex or a metal naphthalocyanine complex. Here, the metal may be copper (Cu), tin (Sn), cobalt (Co), iron (Fe), nickel (Ni), zinc (Zn), magnesium (Mg), or a combination thereof, but is not limited thereto.

[0101] For example, the second material (130b) may be selected from materials satisfying the aforementioned optical and electrical properties, and may include, for instance, fullerene or a fullerene derivative.

[0102] The first material (130a) and the second material (130b) may be mixed in the form of a bulk heterojunction. The drawings are arbitrarily illustrated to show an example of the mixture of the first material (130a) and the second material (130b), and the shape and morphology of the first material (130a) and the second material (130b) are not limited thereto; for example, the first material (130a) and the second material (130b) may be in contact with each other.

[0103] The first material (130a) and the second material (130b) may be included in a predetermined composition ratio, wherein the composition ratio may be defined as the volume or thickness of the first material (130a) relative to the volume or thickness of the second material (130b).

[0104] For example, the first material (130a) may be contained in less than the second material (130b), and for instance, the composition ratio of the first material (130a) to the second material (130b) may be about 0.10:1 to 0.90:1. Within the above range, the composition ratio of the first material (130a) to the second material (130b) may be about 0.10:1 to 0.80:1, about 0.10:1 to 0.70:1, about 0.10:1 to 0.50:1, or about 0.10:1 to 0.30:1. In this way, by relatively increasing the composition ratio of the second material (130b), which has a relatively deeper HOMO energy level than the first material (130a) in the infrared photoelectric conversion layer (130), a sufficient energy barrier can be formed to prevent charge from flowing in reverse from the first electrode (110) or the second electrode (120) to the infrared photoelectric conversion layer (130) under reverse bias voltage, thereby suppressing the dark current.

[0105] The infrared photoelectric conversion layer (130) further includes a third material (130c) in addition to the first material (130a) and the second material (130b). The third material (130c) may be a material different from the first material (130a) and the second material (130b), respectively, and may be a dopant capable of modifying the physical properties of the infrared photoelectric conversion layer (130).

[0106] The third material (130c) may be an organic material, for example, a non-polymer material, for example, a depositable organic compound. As an example, the infrared photoelectric conversion layer (130) may be a co-deposited thin film of the first material (130a), the second material (130b), and the third material (130c), or a mixed film of the first material (130a), the second material (130b), and the third material (130c).

[0107] The third material (130c) may be, for example, a visible light non-absorbing material, and may not substantially absorb light in the visible light wavelength range of, for example, about 380 nm or more and less than 750 nm. The third material (130c) may be, for example, a charge transport material, and may be, for example, a hole transport material or an electron transport material.

[0108] The third material (130c) may have different electrical properties from the first material (130a) and the second material (130b), for example, the energy diagram of the third material (130c) may be different from the energy diagram of the first material (130a) and the energy diagram of the second material (130b).

[0109] For example, the energy band gap of the third material (130c) may be wider than the energy band gaps of the first material (130a) and the second material (130b), respectively.

[0110] The energy bandgap of the third material (130c) may be wider than the energy bandgap of the first material (130a), for example, by about 1.0 eV or more, and within the said range may be wider by about 1.2 eV or more, about 1.5 eV or more, or about 1.7 eV or more, for example, about 1.0 eV to 5.0 eV, about 1.2 eV to 5.0 eV, about 1.5 eV to 5.0 eV, about 1.7 eV to 5.0 eV, about 1.0 eV to 4.5 eV, about 1.2 eV to 4.5 eV, about 1.5 eV to 4.5 eV, about 1.7 eV to 4.5 eV, about 1.0 eV to 4.0 eV, about 1.2 eV to 4.0 eV, about 1.5 eV to 4.0 eV, about 1.5 eV to 4.0 eV, about It may be 1.7 eV to 4.0 eV, about 1.0 eV to 3.5 eV, about 1.2 eV to 3.5 eV, about 1.5 eV to 3.5 eV, or about 1.7 eV to 3.5 eV wider.

[0111] The energy bandgap of the third material (130c) may be at least about 0.5 eV wider than the energy bandgap of the second material (130b), and within the said range may be at least about 0.7 eV, at least about 0.9 eV, or at least about 1.1 eV wider, for example, at least about 0.5 eV to 3.0 eV, at least about 0.7 eV to 3.0 eV, at least about 0.9 eV to 3.0 eV, at least about 1.1 eV to 3.0 eV, at least about 0.5 eV to 2.5 eV, at least about 0.7 eV to 2.5 eV, at least about 0.9 eV to 2.5 eV, at least about 1.1 eV to 2.5 eV, at least about 0.5 eV to 2.0 eV, at least about 0.7 eV to 2.0 eV, at least about 0.9 eV to 2.0 eV, or at least about It can be wider than 1.1 eV to 2.0 eV.

[0112] The energy bandgap of the third material (130c) may be, for example, about 2.8 eV or higher, and within the above range may be about 2.8 eV to 4.0 eV, about 2.8 eV to 3.8 eV, or about 2.8 eV to 3.5 eV.

[0113] For example, the HOMO energy level of the third substance (130c) may be equal to or have little difference from the HOMO energy level of the first substance (130a), for instance, the difference between the HOMO energy level of the first substance (130a) and the HOMO energy level of the third substance (130c) may be less than about 1.0 eV, and within the above range, it may be about 0.9 eV or less, about 0.7 eV or less, about 0.5 eV or less, about 0.3 eV or less, about 0.2 eV or less, or about 0.1 eV or less. For example, the HOMO energy level of the third material (130c) may be equal to or deeper than the HOMO energy level of the first material (130a) within a range greater than 0 and less than about 1.0 eV, and within said range may be deeper within a range of about 0.001 to 0.9 eV, about 0.001 to 0.7 eV, about 0.001 to 0.5 eV, about 0.001 to 0.3 eV, about 0.001 to 0.2 eV, or about 0.001 to 0.1 eV. For example, the HOMO energy level of the third material (130c) may be equal to or shallower than the HOMO energy level of the first material (130a) within a range greater than 0 and less than about 1.0 eV, and within said range may be shallower within a range of about 0.001 to 0.9 eV, about 0.001 to 0.7 eV, about 0.001 to 0.5 eV, about 0.001 to 0.3 eV, about 0.001 to 0.2 eV, or about 0.001 to 0.1 eV.

[0114] A third material (130c) having such electrical properties may be mixed with the first material (130a) and the second material (130b), respectively, within the infrared photoelectric conversion layer (130). As described above, the infrared photoelectric conversion layer (130) containing a mixture of the first material (130a), the second material (130b), and the third material (130c), which have different electrical properties, may have different physical properties from the infrared photoelectric conversion layer containing a mixture of the first material (130a) and the second material (130b) without the third material (130c).

[0115] For example, the infrared photoelectric conversion layer (130) may include a number of charge carrier trapping sites formed intentionally or unintentionally by the conformation of the molecules themselves, such as the arrangement, alignment, and / or stacking of the molecules of the first material (130a) and / or the second material (130b). For example, most of the charge trap sites of the infrared photoelectric conversion layer (130) may be distributed between the HOMO energy level and the LUMO energy level of the first material (130a), for example, mainly distributed between the HOMO energy level of the first material (130a) and the middle of the energy band gap of the first material (130a), for example, mainly distributed at a location closer to the middle of the energy band gap between the HOMO energy level of the first material (130a) and the middle of the energy band gap of the first material (130a) (so-called “deep hole-trap”). Although not bound by any specific theory, the third material (130c) may fill at least some of these charge trap sites and thereby lower the density of charge trap sites within the infrared photoelectric conversion layer (130), thereby effectively controlling the dark current that may be generated by the charge trap sites within the infrared photoelectric conversion layer (130).

[0116] For example, the third material (130c) can change the absorption spectrum and / or EQE spectrum of the infrared photoelectric conversion layer (130), and the absorption spectrum and / or EQE spectrum of the infrared photoelectric conversion layer (130) composed of the first material (130a), the second material (130b), and the third material (130c) can be shifted to a long wavelength region compared to the absorption spectrum and / or EQE spectrum of the infrared photoelectric conversion layer composed of the first material (130a) and the second material (130b) without the third material (130c). For example, the maximum absorption wavelength (maximum EQE wavelength) of the infrared photoelectric conversion layer (130) composed of the first material (130a), the second material (130b), and the third material (130c) may be longer than the maximum absorption wavelength (maximum EQE wavelength) of the infrared photoelectric conversion layer (130) composed of the first material (130a) and the second material (130b) without the third material (130c).For example, the maximum absorption wavelength (maximum EQE wavelength) of an infrared photoelectric conversion layer (130) composed of a first material (130a), a second material (130b), and a third material (130c) may be a wavelength at least about 30 nm longer than the maximum absorption wavelength (maximum EQE wavelength) of an infrared photoelectric conversion layer (130) composed of the first material (130a) and the second material (130b) without the third material (130c), for example, about 40 nm or more, about 50 nm or more, about 60 nm or more, about 70 nm or more, about 30 nm to 300 nm, about 40 nm to 300 nm, about 50 nm to 300 nm, about 60 nm to 300 nm, about 70 nm to 300 nm, about 30 nm to 200 nm, about 40 nm to 200 nm, about 50 nm to 200nm, about 60nm to 200nm, about 70nm to 200nm, about 30nm to 180nm, about 40nm to 180nm, about 50nm to 180nm, about 60nm to 180nm, about 70nm to 180nm, about 30nm to 160nm, about 40nm to 160nm, about 50nm to 160nm, about 60nm to 160nm, about 70nm to 160nm, about 30nm to 140nm, about 40nm to 140nm, about 50nm to 140nm, about 60nm to 140nm, about 70nm to 140nm, about 30nm to 120nm, about 40nm to 120nm, about 50nm to 120nm, It may be a long wavelength of about 60 nm to 120 nm or about 70 nm to 120 nm.

[0117] For example, the absorption spectrum of an infrared photoelectric conversion layer (130) composed of a first material (130a), a second material (130b), and a third material (130c) may be shifted to a long wavelength region compared to the absorption spectrum of the first material (130a) (a thin film composed of the first material (130a)) or the absorption spectrum of a mixture of the first material (130a) and the second material (130b) (a thin film composed of the first material (130a) and the second material (130b) without the third material (130c). For instance, the maximum absorption wavelength of the infrared photoelectric conversion layer (130) composed of the first material (130a), the second material (130b), and the third material (130c) may be shifted to a long wavelength region compared to the absorption spectrum of the first material (130a) (a thin film composed of the first material (130a)) or the mixture of the first material (130a) and the second material (130b) (the third The wavelength may be longer than the maximum absorption wavelength of the thin film made of the first material (130a) and the second material (130b) without the material (130c).For example, the maximum absorption wavelength of the infrared photoelectric conversion layer (130) may be a wavelength at least about 30 nm longer than the maximum absorption wavelength of the first material (130a) (a thin film made of the first material (130a)) or a mixture of the first material (130a) and the second material (130b) (a thin film made of the first material (130a) and the second material (130b) without the third material (130c), for example, about 40 nm or more, about 50 nm or more, about 60 nm or more, about 70 nm or more, about 30 nm to 500 nm, about 40 nm to 500 nm, about 50 nm to 500 nm, about 60 nm to 500 nm, about 70 nm to 500 nm, about 30 nm to 450 nm, about 40 nm to 450 nm, about 50 nm to 450 nm, about 60nm to 450nm, about 70nm to 450nm, about 30nm to 400nm, about 40nm to 400nm, about 50nm to 400nm, about 60nm to 400nm, about 70nm to 400nm, about 30nm to 380nm, about 40nm to 380nm, about 50nm to 380nm, about 60nm to 380nm, about 70nm to 380nm, about 30nm to 360nm, about 40nm to 360nm, about 50nm to 360nm, about 60nm to 360nm, about 70nm to 360nm, about 30nm to 300nm, about 40nm to 300nm, about 50nm to 300nm, about 60nm to 360nm, about 70nm to 360nm, about 30nm to 300nm, about 40nm to 300nm, about 50nm to 300nm, about 60nm to It may be a long wavelength of 300 nm, about 70 nm to 300 nm, about 30 nm to 280 nm, about 40 nm to 280 nm, about 50 nm to 280 nm, about 60 nm to 280 nm, or about 70 nm to 280 nm.

[0118] For example, as the content of the third material (130c) in the infrared photoelectric conversion layer (130) increases, the maximum absorption wavelength (maximum EQE wavelength) of the infrared photoelectric conversion layer (130) may shift further in the direction of a longer wavelength. For example, when the content of the third material (130c) is about 10 volume% or less with respect to the total volume of the infrared photoelectric conversion layer (130), the maximum absorption wavelength (maximum EQE wavelength) of the infrared photoelectric conversion layer (130) may shift in the direction of a longer wavelength of about 30 nm to 70 nm compared to the maximum absorption wavelength of the first material (130a) (a thin film made of the first material (130a)) or a mixture of the first material (130a) and the second material (130b) (a thin film made of the first material (130a) and the second material (130b) without the third material (130c). For example, when the content of the third material (130c) is greater than about 10 volume% and less than or equal to about 20 volume% with respect to the total volume of the infrared photoelectric conversion layer (130), the maximum absorption wavelength (maximum EQE wavelength) of the infrared photoelectric conversion layer (130) may be shifted in the direction of a longer wavelength of about 40 nm to 200 nm compared to the maximum absorption wavelength of the first material (130a) (a thin film made of the first material (130a)) or a mixture of the first material (130a) and the second material (130b) (a thin film made of the first material (130a) and the second material (130b) without the third material (130c). For example, when the content of the third material (130c) is greater than about 20 volume% and less than or equal to about 40 volume% with respect to the total volume of the infrared photoelectric conversion layer (130), the maximum absorption wavelength (maximum EQE wavelength) of the infrared photoelectric conversion layer (130) may be shifted in the direction of a longer wavelength of about 50 nm to 300 nm compared to the maximum absorption wavelength of the first material (130a) (a thin film made of the first material (130a)) or a mixture of the first material (130a) and the second material (130b) (a thin film made of the first material (130a) and the second material (130b) without the third material (130c).

[0119] For example, the maximum absorption wavelength (maximum EQE wavelength) of the infrared photoelectric conversion layer (130) may fall, for example, in the range of approximately 800 nm to 3000 nm, and within the above range, for example, approximately 800 nm to 2500 nm, approximately 800 nm to 2300 nm, approximately 800 nm to 2000 nm, approximately 800 nm to 1800 nm, approximately 800 nm to 1500 nm, approximately 800 nm to 1300 nm, approximately 800 nm to 1200 nm, approximately 800 nm to 1100 nm, approximately 850 nm to 3000 nm, approximately 850 nm to 2500 nm, approximately 850 nm to 2300 nm, approximately 850 nm to 2000 nm, approximately 850 nm to 1800 nm, approximately 850 nm to It may fall within 1500 nm, about 850 nm to 1300 nm, about 850 nm to 1200 nm, or about 850 nm to 1100 nm.

[0120] The third material (130c) is not particularly limited as long as it is a material capable of changing the electrical properties and optical spectrum (EQE spectrum) of the aforementioned infrared photoelectric conversion layer (130), but, for example, it may be an organic material or, for example, a non-polymer material.

[0121] The third substance (130c) may be, for example, an organic compound having a planar core, or, for example, a planar organic compound having at least one arylamine group.

[0122] For example, the third substance (130c) can be represented by the following chemical formula 1.

[0123] [Chemical Formula 1]

[0124]

[0125] In the above chemical formula 1,

[0126] L 1 and L 2 Each may independently be a single bond, a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C6 to C30 arylene group, or a combination thereof, and

[0127] Ar 1 or Ar 4 Each may be an independently substituted or unsubstituted C6 to C30 aryl group, and

[0128] Ar 1 and Ar 2 Each can exist independently or combine with others to form a ring, and

[0129] Ar 3 and Ar 4 Each can exist independently or combine with others to form a ring, and

[0130] R 1 to R 4 Each may independently be hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted amine group, a substituted or unsubstituted C6 to C30 arylamine group, a halogen, a cyano group, or a combination thereof, and

[0131] R 1 to R 4 Each can exist independently or two adjacent ones can combine to form a ring, and

[0132] m is an integer from 0 to 2.

[0133] For example, L 1 and L 2 Each may independently be a single bond, a substituted or unsubstituted phenylene group, a substituted or unsubstituted naphthylene group, a substituted or unsubstituted biphenylene group, or a combination thereof.

[0134] For example, when m is 0, L 1 and L 2 At least one of them may be a substituted or unsubstituted phenylene group, a substituted or unsubstituted naphthylene group, a substituted or unsubstituted biphenylene group, or a combination thereof.

[0135] For example, Ar 1 or Ar 4 Each may independently be a substituted or unsubstituted phenyl group, a substituted or unsubstituted naphthyl group, a substituted or unsubstituted biphenyl group, or a combination thereof.

[0136] For example, Ar 1 and Ar 2 They can combine with each other to form a ring.

[0137] For example, Ar 3 and Ar 4 They can combine with each other to form a ring.

[0138] For example, R 1 and R 2 Each may be a substituted or unsubstituted phenyl group and may combine with each other to form a ring.

[0139] For example, the third substance (130c) may be represented by any one of the following chemical formulas 1-1 to 1-8, but is not limited thereto.

[0140] [Chemical Formula 1-1] [Chemical Formula 1-2]

[0141]

[0142] [Chemical Formula 1-3] [Chemical Formula 1-4]

[0143]

[0144] [Chemical Formula 1-5] [Chemical Formula 1-6]

[0145]

[0146] [Chemical Formula 1-7] [Chemical Formula 1-8]

[0147]

[0148] In the above chemical formulas 1-1 to 1-8,

[0149] R 1 to R22 Each may independently be hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted amine group, a substituted or unsubstituted C6 to C30 arylamine group, a halogen, a cyano group, or a combination thereof, and

[0150] R 1 to R 22 Each can exist independently or two adjacent ones can combine to form a ring, and

[0151] m can be 1 or 2.

[0152] The third material (130c) may be included within a content range that does not affect the molecular stability of the first material (130a) and the second material (130b) and other physical properties required in the infrared photoelectric conversion layer (130), for example, it may be included in less than the second material (130b). For example, the third material (130c) may be included in an amount of about 40 volume% or less with respect to the total volume of the infrared photoelectric conversion layer (130), and within the above range, about 1 to 40 volume%, about 5 to 40 volume%, about 5 to 35 volume%, about 5 to 30 volume%, about 5 to 25 volume%, about 7 to 40 volume%, about 7 to 35 volume%, about 7 to 30 volume%, about 7 to 25 volume%, about 8 to 40 volume%, about 8 to 35 volume%, about 8 to 30 volume%, about 8 to 25 volume%, about 10 to 40 volume%, about 10 to 35 volume%, about 10 to 30 volume%, about 10 to 25 volume%, about 15 to 40 volume%, It may be included in an amount of about 15 to 35 volume%, about 15 to 30 volume%, or about 15 to 25 volume%.

[0153] The infrared photoelectric conversion layer (130) may be an intrinsic layer in which the aforementioned first material (130a), second material (130b), and third material (130c) are mixed in the form of a bulk heterojunction.

[0154] The infrared photoelectric conversion layer (130) may be a ternary system composed of the aforementioned first material (130a), second material (130b), and third material (130c).

[0155] The thickness of the infrared photoelectric conversion layer (130) may be about 100 nm to 700 nm, and within the above range may be about 120 nm to 600 nm, about 150 nm to 500 nm, about 200 nm to 500 nm, or about 230 nm to 500 nm.

[0156] The infrared sensor (100) may further include an anti-reflection layer (not shown) located on one side of the first electrode (110) or the second electrode (120). The anti-reflection layer is positioned on the side where light is incident to further improve light absorption by lowering the reflectivity of the incident light. For example, when light is incident on the first electrode (110), the anti-reflection layer may be located on one side of the first electrode (110), and when light is incident on the second electrode (120), the anti-reflection layer may be located on one side of the second electrode (120).

[0157] The anti-reflective layer may include, for example, a material having a refractive index of about 1.6 to 2.5, and may include at least one of a metal oxide, a metal sulfide, and an organic material having a refractive index in the above range. The anti-reflective layer may include, for example, a metal oxide such as an aluminum-containing oxide, a molybdenum-containing oxide, a tungsten-containing oxide, a vanadium-containing oxide, a rhenium-containing oxide, a niobium-containing oxide, a tantalum-containing oxide, a titanium-containing oxide, a nickel-containing oxide, a copper-containing oxide, a cobalt-containing oxide, a manganese-containing oxide, a chromium-containing oxide, a tellurium-containing oxide, or a combination thereof; a metal sulfide such as zinc sulfide; or an organic material such as an amine derivative, but is not limited thereto.

[0158] For example, when one of the first electrode (110) and the second electrode (120) is a transparent electrode or a semi-transparent electrode and the other of the first electrode (110) and the second electrode (120) is a reflective electrode, the infrared sensor (100) can form a microcavity structure. Due to the microcavity structure, incident light can be repeatedly reflected between the first electrode (110) and the second electrode (120), which are separated by a predetermined optical length, thereby enhancing light of a predetermined wavelength spectrum. Here, the optical length may be the distance between the first electrode (110) and the second electrode (120), and may be, for example, the thickness of the infrared photoelectric conversion layer (130). For example, among the incident light, light of a predetermined wavelength spectrum can be modified by repeatedly reflecting between a reflective electrode and a transparent electrode or a semi-transparent electrode, and among the modified light, light of a wavelength spectrum corresponding to the resonance wavelength of a micro-resonance can be enhanced to exhibit amplified photoelectric conversion characteristics in a narrow wavelength region. The resonance wavelength of the micro-resonance may fall within the absorption spectrum of the aforementioned infrared photoelectric conversion layer (130), for example, to about 800 nm to 3000 nm, and within the above range, for example, to about 800 nm to 2500 nm, about 800 nm to 2300 nm, about 800 nm to 2000 nm, about 800 nm to 1800 nm, about 800 nm to 1500 nm, about 800 nm to 1300 nm, about 800 nm to 1200 nm, about 800 nm to 1100 nm, about 850 nm to 3000 nm, about 850 nm to 2500 nm, about 850 nm to 2300 nm, about 850 nm to 2000 nm, about 850 nm to 1800 nm, about 850 nm to It may fall within 1500 nm, about 850 nm to 1300 nm, about 850 nm to 1200 nm, or about 850 nm to 1100 nm.

[0159] When light is incident from the first electrode (110) or the second electrode (120) side of the infrared sensor (100) and the infrared photoelectric conversion layer (130) absorbs light in a predetermined wavelength range, excitons can be generated internally. The excitons are separated into holes and electrons in the infrared photoelectric conversion layer (130), and the separated holes move to the anode, which is one of the first electrode (110) and the second electrode (120), and the separated electrons move to the cathode, which is the other of the first electrode (110) and the second electrode (120), so that current can flow.

[0160] As described above, the infrared photoelectric conversion layer (130) can improve the physical properties of the infrared photoelectric conversion layer (130) by further including a third material (130c) in addition to the first material (130a) and the second material (130b) that form a pn junction. Accordingly, the optical and electrical characteristics of the infrared sensor (100) can be improved.

[0161] As an example, as described above, the dark current characteristics of the infrared sensor (100) can be improved by effectively lowering the density of the charge trap region in the infrared photoelectric conversion layer (130) by the third material (130c) and ultimately improving the electrical characteristics of the infrared sensor (100).

[0162] As an example, as described above, by shifting the absorption spectrum of the infrared photoelectric conversion layer (130) to a long wavelength region by the third material (130c), the material limitations of the infrared absorption characteristics of the first material (130a) can be overcome, and an infrared sensor capable of sensing light in a longer wavelength region than the absorption region of the first material (130a) can be realized.

[0163] The infrared sensor (100) can be applied to various sensors for sensing light in the infrared wavelength range, for example, a sensor for improving the sensitivity of an image sensor in a low-light environment, a sensor for increasing the detection capability of a three-dimensional image by widening the dynamic range for detailed distinction between black and white brightness, or a biometric sensor, and the biometric sensor may be, for example, an iris sensor, a distance sensor, a fingerprint sensor, or a blood vessel distribution sensor, but is not limited thereto. The infrared sensor (100) may be applied to, for example, a CMOS infrared sensor or a CMOS image sensor.

[0164] The combination of the first material (130a), the second material (130b), and the third material (130c) applied to the infrared photoelectric conversion layer (130) can be independently applied to other fields as a composition. The composition may have the aforementioned electrical and optical properties.

[0165] A sensor according to another embodiment is described below.

[0166] FIG. 2 is a cross-sectional view showing another example of an infrared sensor according to one embodiment.

[0167] Referring to FIG. 2, an infrared sensor (100) according to one embodiment includes a first electrode (110) and a second electrode (120) facing each other, and an infrared photoelectric conversion layer (130) located between the first electrode (110) and the second electrode (120), similar to the example described above. The description of the first electrode (110), the second electrode (120), and the infrared photoelectric conversion layer (130) is as described above.

[0168] However, unlike the example described above, the infrared sensor (100) according to the present example further includes auxiliary layers (140, 150) between the first electrode (110) and the infrared photoelectric conversion layer (130) and / or between the second electrode (120) and the infrared photoelectric conversion layer (130). The auxiliary layers (140, 150) may be a charge auxiliary layer that controls the movement speed of holes and / or electrons separated from the infrared photoelectric conversion layer (130), an optical auxiliary layer that controls the absorption of incident light, or a combination thereof.

[0169] For example, when the first electrode (110) is an anode and the second electrode (120) is a cathode, the auxiliary layer (140) may be a hole injecting layer (HIL) that facilitates the injection of holes, a hole transporting layer (HTL) that facilitates the transport of holes, and / or an electron blocking layer (EBL) that prevents the movement of electrons, and the auxiliary layer (150) may be an electron injecting layer (EIL) that facilitates the injection of electrons, an electron transporting layer (ETL) that facilitates the transport of electrons, and / or a hole blocking layer (HBL) that prevents the movement of holes.

[0170] For example, the auxiliary layer (140) may be a hole transport layer and / or an electron blocking layer and may include a fourth material having a wide energy bandgap.

[0171] The energy bandgap of the fourth material may be wider than the energy bandgap of the first material (130a) and the second material (130b) included in the infrared photoelectric conversion layer (130). For example, the energy bandgap of the fourth material may be at least about 1.0 eV wider than the energy bandgap of the first material (130a), and within the above range may be at least about 1.2 eV, at least about 1.5 eV, or at least about 1.7 eV wider, for example, about 1.0 eV to 5.0 eV, about 1.2 eV to 5.0 eV, about 1.5 eV to 5.0 eV, about 1.7 eV to 5.0 eV, about 1.0 eV to 4.5 eV, about 1.2 eV to 4.5 eV, about 1.5 eV to 4.5 eV, about 1.7 eV to 4.5 eV, about 1.0 eV to 4.0 eV, about 1.2 eV to 4.0 eV, about 1.5 eV to 4.0 eV, about 1.7 eV to 4.5 eV, about 1.0 eV to 4.0 eV, about 1.2 eV to 4.0 eV, about 1.5 eV to 4.0 eV, about 1.7 eV to It may be 4.0 eV, about 1.0 eV to 3.5 eV, about 1.2 eV to 3.5 eV, about 1.5 eV to 3.5 eV, or about 1.7 eV to 3.5 eV wider. For example, the energy bandgap of the fourth material may be at least about 0.5 eV wider than the energy bandgap of the second material (130b), and within the above range may be at least about 0.7 eV, at least about 0.9 eV, or at least about 1.1 eV wider, for example, at least about 0.5 eV to 3.0 eV, at least about 0.7 eV to 3.0 eV, at least about 0.9 eV to 3.0 eV, at least about 1.1 eV to 3.0 eV, at least about 0.5 eV to 2.5 eV, at least about 0.7 eV to 2.5 eV, at least about 0.9 eV to 2.5 eV, at least about 1.1 eV to 2.5 eV, at least about 0.5 eV to 2.0 eV, at least about 0.7 eV to 2.0 eV, at least about 0.9 eV to 2.0 eV, or at least about 1.1 eV to It may be wider than 2.0 eV. The energy bandgap of the fourth material may be, for example, about 2.8 eV or greater, and within the above range may be about 2.8 eV to 4.0 eV, about 2.8 eV to 3.8 eV, or about 2.8 eV to 3.5 eV.

[0172] The HOMO energy level of the fourth material may be located between the work function of the first electrode (110) and the HOMO energy level of the first material (130a) of the infrared photoelectric conversion layer (130), for example, the work function of the first electrode (110), the HOMO energy level of the fourth material, and the HOMO energy level of the first material (130a) of the infrared photoelectric conversion layer (130) may be stepwise. For example, the HOMO energy level of the fourth material may be about 4.8 eV to 5.4 eV, and within the above range may be about 4.9 eV to 5.4 eV or about 5.0 eV to 5.4 eV. The auxiliary layer (140) can effectively transport or extract holes from the infrared photoelectric conversion layer (130) to the first electrode (110) by including a fourth material having these electrical characteristics, while simultaneously effectively blocking electrons from flowing in reverse from the first electrode (110) to the infrared photoelectric conversion layer (130) when reverse bias is applied.

[0173] The fourth substance may be the same as or different from the aforementioned third substance (130c).

[0174] For example, when the first electrode (110) is the cathode and the second electrode (120) is the anode, the auxiliary layer (140) may be an electron injection layer (EIL) that facilitates the injection of electrons, an electron transport layer (ETL) that facilitates the transport of electrons, and / or a hole blocking layer (HBL) that prevents the movement of holes, and the auxiliary layer (150) may be a hole injection layer (HIL) that facilitates the injection of holes, a hole transport layer (HTL) that facilitates the transport of holes, and / or an electron blocking layer (EBL) that prevents the movement of electrons.

[0175] For example, at least one of the auxiliary layers (140, 150) may include any one of the first material (130a), the second material (130b), and the third material (130c). For example, the auxiliary layer (140) may include the third material (130c). For example, the auxiliary layer (150) may include the second material (130b).

[0176] Either of the auxiliary layers (140, 150) may be omitted.

[0177] FIG. 3 is a cross-sectional view showing an example of a sensor according to one embodiment.

[0178] A sensor (300) according to one embodiment includes a semiconductor substrate (40), an insulating layer (80), and an infrared sensor (100).

[0179] The semiconductor substrate (40) may be a silicon substrate and has a transfer transistor (not shown) and a charge storage (55) integrated therein. The charge storage (55) may be integrated for each pixel. The charge storage (55) is electrically connected to an infrared sensor (100), and information from the charge storage (55) can be transmitted by the transfer transistor.

[0180] Metal wiring (not shown) and pads (not shown) are also formed on the semiconductor substrate (40). The metal wiring and pads may be made of metals having low resistivity, such as aluminum (Al), copper (Cu), silver (Ag), and alloys thereof, to reduce signal delay, but are not limited thereto. However, the structure is not limited to the above, and the metal wiring and pads may be located on the lower part of the semiconductor substrate (40).

[0181] An insulating layer (80) is formed over the metal wiring and pads. The insulating layer (80) may be made of an inorganic insulating material such as silicon oxide and / or silicon nitride, or a low dielectric constant (low K) material such as SiC, SiCOH, SiCO, and SiOF. The insulating layer (80) has a trench (85) that exposes a charge storage (55). The trench may be filled with a filler.

[0182] An infrared sensor (100) as described above is formed on an insulating layer (80). As described above, the infrared sensor (100) includes a first electrode (110), a second electrode (120), and an infrared photoelectric conversion layer (130), and may optionally further include a charge assist layer (not shown). The description of the first electrode (110), the second electrode (120), and the infrared photoelectric conversion layer (130) is as described above.

[0183] The second electrode (120) may be an incident electrode into which light is introduced, and among the light incident from the second electrode (120), light in the infrared wavelength region may be effectively absorbed and converted by the infrared photoelectric conversion layer (130), and as described above, the combination of the first material (130a), the second material (130b), and the third material (130c) of the infrared photoelectric conversion layer (130) can effectively suppress dark current under reverse bias voltage and exhibit good photoelectric conversion characteristics.

[0184] In FIG. 3, an example including the infrared sensor (100) of FIG. 1 is shown, but it is not limited thereto and may include the infrared sensor (100) of FIG. 2.

[0185] A condensing lens (not shown) may be further formed on the infrared sensor (100). The condensing lens can control the direction of the incident light to gather the light to a single point. The condensing lens may be, for example, cylindrical or hemispherical, but is not limited thereto.

[0186] FIG. 4 is a cross-sectional view showing an example of a sensor according to another embodiment.

[0187] The sensor according to the present embodiment may include a plurality of sensors with different functions. For example, at least one of the plurality of sensors with different functions may be a biometric sensor, and the biometric sensor may be, for instance, an iris sensor, a distance sensor, a fingerprint sensor, or a blood vessel distribution sensor, but is not limited thereto. For example, one of the plurality of sensors with different functions may be an iris sensor and the other may be a distance sensor.

[0188] For example, a plurality of sensors may include, for instance, a first infrared light sensor that detects light in the infrared region having a first wavelength (λ1) within the infrared wavelength region and a second infrared light sensor that detects infrared light having a second wavelength (λ2) within the infrared wavelength region.

[0189] The first wavelength (λ1) and the second wavelength (λ2) may differ from each other, for example, within a wavelength range of about 700 nm to 3000 nm, and for example, the difference between the first wavelength (λ1) and the second wavelength (λ2) may be about 30 nm or more, about 50 nm or more within the above range, about 70 nm or more, about 80 nm or more, and about 90 nm or more.

[0190] For example, one of the first wavelength (λ1) and the second wavelength (λ2) may be in the wavelength range of about 750 nm to 1100 nm, and the other of the first wavelength (λ1) and the second wavelength (λ2) may be in the wavelength range of about 800 nm to 1500 nm.

[0191] The sensor (400) according to the present embodiment includes a semiconductor substrate (40) on which an optical filter (250); an upper infrared sensor (100); an insulating layer (80); and a lower infrared sensor (180) are integrated. The upper infrared sensor (100) and the lower infrared sensor (180) are stacked.

[0192] The optical filter (250) may be positioned on the front side of the sensor (400) and may selectively transmit infrared light including a first wavelength (λ1) and infrared light including a second wavelength (λ2), while blocking and / or absorbing other light. Here, other light may also include light in the ultraviolet and visible light regions.

[0193] The upper infrared sensor (100) may be the same as the infrared sensor (100) described above, and a detailed description is omitted. In FIG. 4, an example including the infrared sensor (100) of FIG. 1 is shown as the upper infrared sensor (100), but it is not limited thereto and may include the infrared sensor (100) of FIG. 2.

[0194] The lower infrared sensor (180) may be integrated within the semiconductor substrate (40) and may be a photodiode. The semiconductor substrate (40) may be, for example, a silicon substrate, and the lower infrared sensor (180), charge storage (55), and transfer transistor (not shown) are integrated therein.

[0195] The light introduced into the lower infrared sensor (180) is light that has passed through the light filter (250) and the upper infrared sensor (100), and may be infrared light of a predetermined range including a second wavelength (λ2). Infrared light of a predetermined range including a first wavelength (λ1) may be substantially all absorbed by the infrared photoelectric conversion layer (130) of the upper infrared sensor (100) and may not reach the lower infrared sensor (180). In this case, a separate filter is not required for wavelength selectivity of the light introduced into the lower infrared sensor (180). However, in anticipation of the case where infrared light of a predetermined range including a first wavelength (λ1) is not entirely absorbed by the infrared photoelectric conversion layer (130), a filter (not shown) may be additionally provided between the upper infrared sensor (100) and the lower infrared sensor (180).

[0196] The sensor according to the present embodiment can perform the function of a composite sensor by including two infrared sensors that perform separate functions, and can also significantly improve sensitivity by doubling the number of pixels capable of performing the function of each sensor while maintaining the same size by stacking two sensors that perform separate functions in each pixel.

[0197] FIG. 5 is a cross-sectional view showing an example of a sensor according to another embodiment.

[0198] Referring to FIG. 5, the sensor (500) according to the present embodiment includes an infrared sensor (100), a visible light sensor (200), and a light filter (250).

[0199] The infrared sensor (100) includes a first electrode (110), a second electrode (120), and an infrared photoelectric conversion layer (130) located between the first electrode (110) and the second electrode (120), similar to the embodiment described above, and the specific details are as described above.

[0200] The visible light sensor (200) is a sensor that senses light in the visible light wavelength range and may be a photodiode integrated in the semiconductor substrate (40). The visible light sensor (200) may be integrated within the semiconductor substrate (40) and includes a blue sensor (200a) that detects light in the blue wavelength range, a green sensor (200b) that detects light in the green wavelength range, and a red sensor (200c) that detects light in the red wavelength range. The blue sensor (200a) may be integrated in a blue pixel, the green sensor (200b) may be integrated in a green pixel, and the red sensor (200c) may be integrated in a red pixel. In the drawing, the blue sensor (200a), the green sensor (200b), and the red sensor (200c) are exemplarily shown as being located at the same depth from the surface of the semiconductor substrate (40), but are not limited thereto and may be located at different depths.

[0201] The semiconductor substrate (40) may be, for example, a silicon substrate and has a visible light sensor (200), a charge storage (55), and a transfer transistor (not shown) integrated therein. The visible light sensor (200) can sense light in the visible light wavelength region that has passed through a light filter (250), an infrared sensor (100), and a color filter layer (70), and the sensed information can be transmitted by the transfer transistor. The charge storage (55) is electrically connected to the infrared sensor (100).

[0202] Metal wiring (not shown) and pads (not shown) are formed on the semiconductor substrate (40). The metal wiring and pads may be made of a metal having low resistivity, such as aluminum (Al), copper (Cu), silver (Ag), or an alloy thereof, to reduce signal delay, but are not limited thereto. However, the structure is not limited to the above, and the metal wiring and pads may be located below the blue sensor (200a), green sensor (200b), and red sensor (200c).

[0203] A lower insulating layer (60) is formed on the semiconductor substrate (40). The lower insulating layer (60) may be made of an inorganic insulating material such as silicon oxide and / or silicon nitride, or a low dielectric constant (low K) material such as SiC, SiCOH, SiCO, and SiOF.

[0204] A color filter layer (70) is formed on the lower insulating layer (60). The color filter layer (70) may include a blue filter (70a) that selectively transmits light in the blue wavelength region, a green filter (70b) that selectively transmits light in the green wavelength region, and a red filter (70c) that selectively transmits light in the red wavelength region. The blue filter (70a), the green filter (70b), and the red filter (70c) are positioned overlappingly on the blue sensor (200a), the green sensor (200b), and the blue sensor (200c), respectively. The blue filter (70a) can selectively transmit light in the blue wavelength region, the green filter (70b) can selectively transmit light in the green wavelength region, and the red filter (70c) can selectively transmit light in the red wavelength region. Light in the transmitted blue wavelength region can be introduced into the blue sensor (200a), light in the transmitted green wavelength region can be introduced into the green sensor (200b), and light in the transmitted red wavelength region can be introduced into the red sensor (200c). However, it is not limited thereto, and at least one of the blue filter (70a), green filter (70b), and red filter (70c) may be replaced with a yellow filter, a cyan filter, or a magenta filter. Here, a structure in which the color filter layer (70) is placed between the infrared sensor (100) and the visible light sensor (200) is illustrated, but it is not limited thereto and may be placed on top of the infrared sensor (100).

[0205] An upper insulating layer (80) is formed on the color filter layer (70). The upper insulating layer (80) may be, for example, a flattening layer. The lower insulating layer (60) and the upper insulating layer (80) may have a trench (85) that exposes a charge storage (55). The trench (85) may be filled with a filler. At least one of the lower insulating layer (60) and the upper insulating layer (80) may be omitted.

[0206] The optical filter (250) is located above the visible light sensor (200) and the infrared sensor (100), and is located on the whole surface of the visible light sensor (200) and the infrared sensor (100). The optical filter (250) can selectively transmit light in a predetermined wavelength range, including the wavelength to be sensed by the visible light sensor (200) and the wavelength to be sensed by the infrared sensor (100), and block other light by reflection or absorption.

[0207] A condensing lens (not shown) may be further formed on the upper or lower part of the light filter (250). The condensing lens can control the direction of the incident light to gather the light to a single point. The condensing lens may be, for example, cylindrical or hemispherical, but is not limited thereto.

[0208] FIG. 6 is a cross-sectional view showing an example of a sensor according to another embodiment.

[0209] The sensor (600) according to the present embodiment includes an infrared sensor (100), a visible light sensor (200), and a light filter (250), similar to the above-described embodiment.

[0210] The infrared sensor (100) includes a first electrode (110), a second electrode (120), and an infrared photoelectric conversion layer (130) located between the first electrode (110) and the second electrode (120), and the specific details are as described above.

[0211] The visible light sensor (200) may be a combination of a photodiode integrated on a semiconductor substrate (40) and a photoelectric conversion element located on the semiconductor substrate (40).

[0212] A blue sensor (200a), a red sensor (200b), a charge storage (55, 240), and a transfer transistor (not shown) are integrated into the semiconductor substrate (40). The blue sensor (200a) and the red sensor (200b) are photodiodes and are spaced apart in the horizontal direction of the semiconductor substrate (40). The blue sensor (200a) is integrated into a blue pixel and the red sensor (200b) is integrated into a red pixel. In the drawing, the blue sensor (200a) and the red sensor (200b) are exemplarily shown as being located at the same depth from the surface of the semiconductor substrate (40), but are not limited thereto and may be located at different depths.

[0213] A lower insulating layer (60) and a color filter layer (70) are formed on the semiconductor substrate (40). The color filter layer (70) includes a blue filter (70a) that overlaps with the blue sensor (200a) and a red filter (70c) that overlaps with the red sensor (200c).

[0214] An intermediate insulating layer (65) is formed on the color filter layer (70). The lower insulating layer (60) and the intermediate insulating layer (65) may have trenches (85, 87) that expose charge storage (55, 240). The trenches (85, 87) may be filled with a filler. At least one of the lower insulating layer (60) and the intermediate insulating layer (65) may be omitted.

[0215] A green sensor (200b) is formed on the intermediate insulating layer (65). The green sensor (200b) may be a photoelectric conversion element and may be formed on the whole surface. The green sensor (200b) includes a lower electrode (210b) and an upper electrode (220b) facing each other, and a green photoelectric conversion layer (230b) located between the lower electrode (210b) and the upper electrode (220b). One of the lower electrode (210b) and the upper electrode (220b) is an anode and the other is a cathode.

[0216] Both the lower electrode (210b) and the upper electrode (220b) may be light-transmitting electrodes, and the light-transmitting electrodes may be made of a transparent conductor such as indium tin oxide (ITO) or indium zinc oxide (IZO), or may be a metal thin film formed with a thickness of several nanometers to tens of nanometers, or a single layer or multiple layers of a metal thin film formed with a thickness of several nanometers to tens of nanometers doped with a metal oxide.

[0217] The green photoelectric conversion layer (230b) can selectively absorb light in the green wavelength region and allow light in wavelength regions other than the green wavelength region, namely the blue wavelength region and the red wavelength region, to pass through. The green photoelectric conversion layer (230b) can be formed on the whole surface of the sensor (600). Accordingly, the front surface of the sensor (600) can selectively absorb light in the green wavelength region and increase the light area, thereby achieving high absorption efficiency.

[0218] The green photoelectric conversion layer (230b) selectively absorbs light in the green wavelength region to form excitons, and then separates the generated excitons into holes and electrons. The separated holes move to the anode side, which is one of the lower electrode (210b) and the upper electrode (220b), and the separated electrons move to the cathode side, which is the other of the lower electrode (210b) and the upper electrode (220b), to produce a photoelectric conversion effect. The separated electrons and / or holes can be collected in a charge storage (240).

[0219] An auxiliary layer (not shown) may be further included between the lower electrode (210b) and the green photoelectric conversion layer (230b) and / or between the upper electrode (220b) and the green photoelectric conversion layer (230b). The auxiliary layer may be a charge auxiliary layer, an absorption auxiliary layer, or a combination thereof, but is not limited thereto.

[0220] Here, as an example, an example is described in which the blue sensor (200a) and the red sensor (200c) are photodiodes and the green sensor (200b) is a photoelectric converter, but it is not limited thereto. The blue sensor (200a) and the green sensor (200b) may be photodiodes and the red sensor (200c) may be a photoelectric converter, or the green sensor (200b) and the red sensor (200c) may be photodiodes and the blue sensor (200a) may be a photoelectric converter.

[0221] An upper insulating layer (80) is formed on the green sensor (200b), and an infrared sensor (100) and a light filter (250) are disposed on the upper insulating layer (80). The infrared sensor (100) and the light filter (250) are as described above.

[0222] The sensor (600) according to the present embodiment is a composite sensor having a stacked infrared sensor (100) and a visible light sensor (200), and the visible light sensor (200) also has a structure in which a photodiode and a photoelectric conversion element are stacked, thereby further reducing the area of ​​the sensor and thereby enabling miniaturization of the sensor.

[0223] FIG. 7 is a cross-sectional view showing an example of a sensor according to another embodiment.

[0224] Referring to FIG. 7, the sensor (700) according to the present embodiment includes an infrared sensor (100), a visible light sensor (200), and a light filter (250), just like the above-described embodiment.

[0225] The infrared sensor (100) includes a first electrode (110), a second electrode (120), and an infrared photoelectric conversion layer (130) located between the first electrode (110) and the second electrode (120), and the specific details are as described above.

[0226] The visible light sensor (200) includes a blue sensor (200a) and a red sensor (200c) integrated on a semiconductor substrate (40), and a green sensor (200b) located on the semiconductor substrate (40). The blue sensor (200a) and the red sensor (200c) are photodiodes, and the green sensor (200b) may be a photoelectric conversion element. The green sensor (200b) includes a lower electrode (210b), a green photoelectric conversion layer (230b), and an upper electrode (220b).

[0227] However, in the sensor (700) according to the present embodiment, the blue sensor (200a) and the red sensor (200c) integrated on the semiconductor substrate (40) are stacked in a vertical direction. The blue sensor (200a) and the red sensor (200c) can selectively absorb and sense light in each wavelength region according to the stacking depth. That is, the red sensor (200c), which absorbs red light in the long wavelength region, is located deeper from the surface of the semiconductor substrate (40) than the blue sensor (200a), which absorbs blue light in the short wavelength region. By separating the absorption wavelengths according to the stacking depth in this way, the color filter layer (70) can be omitted.

[0228] Here, as an example, an example is described in which the blue sensor (200a) and the red sensor (200c) are photodiodes and the green sensor (200b) is a photoelectric converter, but it is not limited thereto. The blue sensor (200a) and the green sensor (200b) may be photodiodes and the red sensor (200c) may be a photoelectric converter, or the green sensor (200b) and the red sensor (200c) may be photodiodes and the blue sensor (200a) may be a photoelectric converter.

[0229] The sensor (700) according to the present embodiment is a composite sensor equipped with a stacked infrared sensor (100) and a visible light sensor (200). The visible light sensor (200) also includes a stacked photodiode and a photoelectric conversion element, and the photodiode also has a stacked structure, thereby further reducing the area of ​​the sensor and enabling miniaturization of the sensor. Additionally, the sensor (700) according to the present embodiment can simplify the structure and process by not including a separate color filter layer.

[0230] FIG. 8 is a cross-sectional view showing an example of a sensor according to another embodiment.

[0231] Referring to FIG. 8, the sensor (800) according to the present embodiment includes an infrared sensor (100), a visible light sensor (200), and a light filter (250), just like the above-described embodiment.

[0232] The infrared sensor (100) includes a first electrode (110), a second electrode (120), and an infrared photoelectric conversion layer (130) located between the first electrode (110) and the second electrode (120), and the specific details are as described above.

[0233] The visible light sensor (200) includes a blue sensor (200a), a green sensor (200b), and a red sensor (200c) integrated on a semiconductor substrate (40). The blue sensor (200a), the green sensor (200b), and the red sensor (200c) are stacked vertically within the semiconductor substrate (40). The blue sensor (200a), the green sensor (200b), and the red sensor (200c) can separate absorption wavelengths according to the stacking depth, and accordingly, the color filter layer (70) can be omitted. An insulating layer (60) is formed between the semiconductor substrate (40) and the infrared sensor (100), and the insulating layer (60) has a trench (85). The semiconductor substrate (40) includes a charge storage (55) connected to the infrared sensor (100).

[0234] FIG. 9 is a perspective view showing an example of a sensor according to another embodiment, and FIG. 10 is a cross-sectional view showing an example of the sensor of FIG. 9.

[0235] Referring to FIGS. 9 and 10, the sensor (900) according to the present embodiment includes a semiconductor substrate (40); an infrared sensor (100); a visible light sensor (200); an insulating layer (80); and a light filter (250). The visible light sensor (200) includes a blue sensor (200a), a green sensor (200b), and a red sensor (200c).

[0236] The infrared sensor (100), blue sensor (200a), green sensor (200b), and red sensor (200c) may be arranged horizontally on the semiconductor substrate (40) and may each be connected to a charge storage unit (55, 240a, 240b, 240c) integrated on the semiconductor substrate (40).

[0237] The infrared sensor (100), blue sensor (200a), green sensor (200b), and red sensor (200c) may each be photoelectric conversion elements.

[0238] The infrared sensor (100) includes a first electrode (110), a second electrode (120), and an infrared photoelectric conversion layer (130) located between the first electrode (110) and the second electrode (120), and the specific details are as described above.

[0239] The blue sensor (200a) includes a lower electrode (210a), a blue photoelectric conversion layer (230a), and an upper electrode (220a). The green sensor (200b) includes a lower electrode (210b), a green photoelectric conversion layer (230b), and an upper electrode (220b). The red sensor (200c) includes a lower electrode (210c), a red photoelectric conversion layer (230c), and an upper electrode (220c). The blue photoelectric conversion layer (230a) can selectively absorb light in the blue wavelength region to perform photoelectric conversion, the green photoelectric conversion layer (230b) can selectively absorb light in the green wavelength region to perform photoelectric conversion, and the red photoelectric conversion layer (230c) can selectively absorb light in the red wavelength region to perform photoelectric conversion.

[0240] FIG. 11 is a perspective view showing an example of a sensor according to another embodiment, and FIG. 12 is a cross-sectional view showing an example of the sensor of FIG. 11.

[0241] Referring to FIGS. 11 and 12, a sensor (1000) according to the present embodiment includes a semiconductor substrate (40); an infrared sensor (100); a visible light sensor (200); and a light filter (250). The visible light sensor (200) includes a blue sensor (200a), a green sensor (200b), and a red sensor (200c).

[0242] The infrared sensor (100), blue sensor (200a), green sensor (200b), and red sensor (200c) can be stacked vertically on the semiconductor substrate (40) and each can be connected to a charge storage unit (55, 240a, 240b, 240c) integrated on the semiconductor substrate (40).

[0243] The infrared sensor (100) includes a first electrode (110), a second electrode (120), and an infrared photoelectric conversion layer (130) located between the first electrode (110) and the second electrode (120), and the specific details are as described above.

[0244] The blue sensor (200a) includes a lower electrode (210a), a blue photoelectric conversion layer (230a), and an upper electrode (220a). The green sensor (200b) includes a lower electrode (210b), a green photoelectric conversion layer (230b), and an upper electrode (220b). The red sensor (200c) includes a lower electrode (210c), a red photoelectric conversion layer (230c), and an upper electrode (220c).

[0245] Insulating layers (80a, 80b, 80c, 80d) are located between the semiconductor substrate (40) and the blue sensor (200a), between the blue sensor (200a) and the green sensor (200b), between the green sensor (200b) and the red sensor (200c), and between the red sensor (200c) and the infrared sensor (100), respectively.

[0246] In this embodiment, an infrared sensor (100), a blue sensor (200a), a green sensor (200b), and a red sensor (200c) are stacked in sequence, but this is not limited thereto and the stacking order can vary without limitation.

[0247] The sensor described above can be applied to various electronic devices, such as mobile phones, digital cameras, computers, tablet PCs, biometric devices and / or automotive electronic components, but is not limited thereto.

[0248] Figure 13 is a schematic diagram of an electronic device according to one example.

[0249] Referring to FIG. 13, the electronic device (1300) includes a processor (1320), memory (1330), sensor (1340), and display device (1350) electrically connected via a bus (1310). The sensor (1340) may be one of the various sensors (100, 300, 400, 500, 600, 700, 800, 900, 1000) described above. The processor (1320) may perform one or more functions by executing a storage program. The processor (1320) may additionally execute a storage program to display an image on the display device (1350). The processor (1320) may generate an output.

[0251] The above-described embodiment will be explained in more detail through the following examples. However, the following examples are for illustrative purposes only and do not limit the scope of the claims.

[0253] Examples

[0254] Example 1-1

[0255] A compound represented by the following chemical formula C-1 (HOMO: 5.08 eV, LUMO: 1.98 eV) is deposited on an Ag reflector (Work function: 4.7 eV) to form a 20 nm thick lower auxiliary layer. Subsequently, tin naphthalocyanine dichloride (Sn-naphthalocyanine dichloride) represented by the following chemical formula A (first material, p-type semiconductor, λ) is deposited on the lower auxiliary layer. max,A : 870nm, HOMO: 5.16eV, LUMO: 3.96eV), C60 represented by the following chemical formula B (second material, n-type semiconductor, λ max,A: 450nm, HOMO: 6.0eV, LUMO: 4.3eV) and a compound represented by the following chemical formula C-1 (third material, HOMO: 5.08eV, LUMO: 1.98eV) are co-deposited to form an infrared photoelectric conversion layer with a thickness ratio (volume ratio) of 40:150:20, thereby forming an infrared photoelectric conversion layer with a thickness of 210nm. Subsequently, C60 is deposited on the infrared photoelectric conversion layer to form an upper auxiliary layer with a thickness of 15nm, and silver (Ag) is deposited on it to a thickness of 30nm to form an upper electrode, thereby manufacturing an infrared sensor.

[0256] [Chemical Formula A] [Chemical Formula B] [Chemical Formula C-1]

[0257]

[0259] Examples 1-2

[0260] An infrared sensor is manufactured in the same manner as in Example 1-1, except that the first material, the second material, and the third material are co-deposited to form an infrared photoelectric conversion layer with a thickness of 230 nm in a thickness ratio (volume ratio) of 40:150:40.

[0262] Examples 1-3

[0263] An infrared sensor is manufactured in the same manner as in Example 1-1, except that the first material, the second material, and the third material are co-deposited to form an infrared photoelectric conversion layer with a thickness of 250 nm in a thickness ratio (volume ratio) of 40:150:60.

[0265] Example 2

[0266] An infrared sensor is manufactured in the same manner as in Example 1-1, except that instead of the compound represented by the above chemical formula C-1, a compound represented by the following chemical formula C-2 (HOMO: 5.14 eV, LUMO: 2.04 eV) is included as a third material, and the first material, the second material, and the third material are co-deposited to form an infrared photoelectric conversion layer with a thickness of 230 nm in a thickness ratio (volume ratio) of 40:150:40.

[0267] [Chemical Formula C-2]

[0268]

[0270] Example 3

[0271] An infrared sensor is manufactured in the same manner as in Example 1-1, except that instead of the compound represented by the above chemical formula C-1, a compound represented by the following chemical formula C-3 (HOMO: 5.29 eV, LUMO: 2.29 eV) is included as a third material, and the first material, the second material, and the third material are co-deposited to form an infrared photoelectric conversion layer with a thickness of 220 nm such that the thickness ratio (volume ratio) is 45:140:35.

[0272] [Chemical Formula C-3]

[0273]

[0275] Example 4

[0276] An infrared sensor is manufactured in the same manner as in Example 1-1, except that instead of the compound represented by the above chemical formula C-1, a compound represented by the following chemical formula C-4 (HOMO: 4.96 eV, LUMO: 1.80 eV) is included as a third material, and the first material, the second material, and the third material are co-deposited to form an infrared photoelectric conversion layer with a thickness of 215 nm in a thickness ratio (volume ratio) of 45:140:30.

[0277] [Chemical Formula C-4]

[0278]

[0280] Example 5

[0281] An infrared sensor is manufactured in the same manner as in Example 1-1, except that instead of the compound represented by the above chemical formula C-1, a compound represented by the following chemical formula C-5 is included as a third material (HOMO: 5.25 eV, LUMO: 2.01 eV), and the first material, the second material, and the third material are co-deposited to form an infrared photoelectric conversion layer with a thickness of 215 nm in a thickness ratio (volume ratio) of 45:140:30.

[0282] [Chemical Formula C-5]

[0283]

[0285] Example 6

[0286] An infrared sensor is manufactured in the same manner as in Example 1-1, except that instead of the compound represented by the above chemical formula C-1, a compound represented by the following chemical formula C-6 is included as a third material (HOMO: 5.73 eV, LUMO: 2.54 eV), and the first material, the second material, and the third material are co-deposited to form an infrared photoelectric conversion layer with a thickness of 215 nm in a thickness ratio (volume ratio) of 45:140:30.

[0287] [Chemical Formula C-6]

[0288]

[0290] Example 7

[0291] An infrared sensor is manufactured in the same manner as in Example 1-1, except that instead of the compound represented by the above chemical formula C-1, a compound represented by the following chemical formula C-7 is included as a third material (HOMO: 5.41 eV, LUMO: 2.49 eV), and the first material, the second material, and the third material are co-deposited to form an infrared photoelectric conversion layer with a thickness of 215 nm in a thickness ratio (volume ratio) of 45:140:30.

[0292] [Chemical Formula C-7]

[0293]

[0295] Example 8

[0296] An infrared sensor is manufactured in the same manner as in Example 1-1, except that instead of the compound represented by the above chemical formula C-1, a compound represented by the following chemical formula C-8 is included as a third material (HOMO: 5.36 eV, LUMO: 2.32 eV), and the first material, the second material, and the third material are co-deposited to form an infrared photoelectric conversion layer with a thickness of 215 nm in a thickness ratio (volume ratio) of 45:140:30.

[0297] [Chemical Formula C-8]

[0298]

[0300] Example 9

[0301] An infrared sensor is manufactured in the same manner as in Example 1-1, except that instead of the compound represented by the above chemical formula C-1, a compound represented by the following chemical formula C-9 is included as a third material (HOMO: 6.00 eV, LUMO: 2.67 eV), and the first material, the second material, and the third material are co-deposited to form an infrared photoelectric conversion layer with a thickness of 215 nm such that the thickness ratio (volume ratio) of the first material is 45:140:30.

[0302] [Chemical Formula C-9]

[0303]

[0305] Comparative Example 1

[0306] An infrared sensor is manufactured in the same manner as in Example 1-1, except that an infrared photoelectric conversion layer with a thickness of 190 nm is formed by co-depositing the first material and the second material without the third material at a thickness ratio (volume ratio) of 40:150.

[0308] Evaluation I

[0309] The absorption spectrum and EQE spectrum of the infrared sensor according to the example and comparative example are evaluated.

[0310] The absorption spectrum and EQE spectrum of the infrared sensor are evaluated using a UV-Visible spectrophotometer and an Incident Photon to Current Conversion Efficiency (IPCE) instrument, respectively.

[0311] The results are as shown in Table 1.

[0312] l max, A (nm) l max, EQE (nm) Example 1-1 1150 1150 Examples 1-2 1250 1250 Examples 1-3 1270 1270 Example 2 1230 1230 Example 3 1200 1200 Example 4 1195 1195 Example 5 1195 1195 Example 6 1185 1185 Example 7 1200 1200 Example 8 1200 1200 Example 9 1190 1190 Comparative Example 1 1110 1110

[0313] *λ max, A : Maximum absorption wavelength

[0314] * λ max, EQE : Maximum EQE wavelength

[0315] Referring to Table 1, it can be seen that the absorption spectrum and EQE spectrum of the infrared sensor according to the embodiment shift to the long wavelength region compared to the infrared sensor according to the comparative example. Additionally, it can be seen that the higher the content of the third material included in the infrared photoelectric conversion layer, the further the absorption spectrum and EQE spectrum shift to the long wavelength region.

[0317] Evaluation II

[0318] The change in the number of charge trap sites according to the content of the third material and the dark current under reverse bias voltage are checked in the infrared sensors according to the examples and comparative examples.

[0319] The number of charge trap sites is calculated by measuring the capacitance-voltage characteristics using an impedance analyzer.

[0320] Dark current is evaluated by measuring the dark current using a current-voltage evaluation device (Keithley K4200 parameter analyzer) and dividing it by the unit pixel area (0.04 cm²), and the dark current density is evaluated from the current flowing when -3V reverse bias is applied.

[0321] The results are as shown in Table 2.

[0322] Number of Heart Traps (10 16 cm -3 ev -1 ) Dark current density (h / s / ㎛) 2 ) Example 1-1 31 1.2 x 10 5 Examples 1-2 5.6 5.2 x 10 4 Examples 1-3 6.2 4.4 x 10 4 Example 2 47 1.5 x 10 5 Example 3 49 7.7 x 10 4 Example 4 - 9.7 x 10 4 Example 5 - 9.3 x 10 4 Example 6 - 8.3 x 10 4 Example 7 - 1.2 x 10 5 Example 8 - 1.2 x 10 5 Comparative Example 1 466 3.3 x 10 5

[0323] Referring to Table 2, it can be seen that the infrared sensor according to the embodiment has a lower number of charge traps and dark current density compared to the infrared sensor according to the comparative example. In addition, it can be seen that the number of charge traps and dark current density are further lower when the content of the third material included in the infrared photoelectric conversion layer is high.

[0325] Although the embodiments have been described in detail above, the scope of the rights is not limited thereto, and various modifications and improvements by those skilled in the art using the basic concepts defined in the following claims are also included within the scope of the rights. Explanation of the symbols

[0328] 100: Infrared sensor 110: First electrode 120: Second electrode 130: Infrared photoelectric conversion layer 140, 150: Auxiliary layer 200: Visible light sensor 230: Visible light photoelectric conversion layer 55, 240: Charge storage 250: Optical filter 85, 87: Trench 60, 80: Insulation layer 70: Color filter layer 40: Semiconductor substrate 300,400,500,600,700,800,900,1000: Sensor 1300: Electronic device

Claims

Claim 1 A sensor comprising a first electrode and a second electrode, and an infrared photoelectric conversion layer located between the first electrode and the second electrode that absorbs light in at least a portion of the infrared wavelength region and converts it into an electrical signal, wherein the infrared photoelectric conversion layer comprises a first material having a maximum absorption wavelength in the infrared wavelength region, a second material forming a pn junction with the first material, and a third material having an energy bandgap at least 1.0 eV larger than the energy bandgap of the first material, wherein the first material, the second material, and the third material are different from each other and are each non-polymer materials, and the infrared photoelectric conversion layer comprises a mixture of the first material, the second material, and the third material. Claim 2 A sensor according to claim 1, wherein the difference between the HOMO energy level of the first material and the HOMO energy level of the third material is less than 1.0 eV. Claim 3 A sensor according to claim 1, wherein the difference between the HOMO energy level of the second material and the HOMO energy level of the first material is 0.5 eV or more. Claim 4 A sensor according to claim 1, wherein the energy bandgap of the first material is 0.5 eV to 1.8 eV and the energy bandgap of the third material is 2.8 eV to 4.0 eV. Claim 5 In claim 1, the sensor in which the energy bandgap of the third material is larger than the energy bandgap of the second material. Claim 6 A sensor according to claim 1, wherein the first substance is contained in less than the second substance. Claim 7 A sensor according to claim 6, wherein the composition ratio of the first material to the second material is 0.10 to 0.

90. Claim 8 A sensor according to claim 6, wherein the composition ratio of the first material to the second material is 0.10 to 0.

50. Claim 9 A sensor according to claim 1, wherein the first substance and the third substance are each contained in smaller amounts than the second substance. Claim 10 A sensor according to claim 1, wherein the third material is included in an amount of 1 to 40 volume% with respect to the total volume of the infrared photoelectric conversion layer. Claim 11 A sensor according to claim 1, wherein the third material is included in an amount of 7 to 25 volume% with respect to the total volume of the infrared photoelectric conversion layer. Claim 12 A sensor according to claim 1, wherein the maximum absorption wavelength of the infrared photoelectric conversion layer is longer than the maximum absorption wavelength of the first material. Claim 13 In claim 1, the maximum external quantum efficiency wavelength of the infrared photoelectric conversion layer shifts in the direction of longer wavelengths as the content of the third material increases. Claim 14 In paragraph 1, the third substance is an organic sensor. Claim 15 In claim 1, the third substance is a sensor represented by the following chemical formula 1: [Chemical Formula 1] In the above chemical formula 1, L 1 and L 2 Each is independently a single bond, a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C6 to C30 arylene group, or a combination thereof, and Ar 1 or Ar 4 Each is an independently substituted or unsubstituted C6 to C30 aryl group, and Ar 1 and Ar 2 Each exists independently or combines with others to form a ring, and Ar 3 and Ar 4 They each exist independently or combine with each other to form a ring, and R 1 to R 4 Each is independently hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted amine group, a substituted or unsubstituted C6 to C30 arylamine group, a halogen, a cyano group, or a combination thereof, and R 1 to R 4 Each exists independently or two adjacent ones combine to form a ring, and m is an integer from 0 to 2. Claim 16 In claim 15, the third substance is a sensor represented by any one of the following chemical formulas 1-1 to 1-8: [Chemical Formula 1-1] [Chemical Formula 1-2] [Chemical Formula 1-3] [Chemical Formula 1-4] [Chemical Formula 1-5] [Chemical Formula 1-6] [Chemical Formula 1-7] [Chemical Formula 1-8] In the above chemical formulas 1-1 to 1-8, R 1 to R 22 Each is independently hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted amine group, a substituted or unsubstituted C6 to C30 arylamine group, a halogen, a cyano group, or a combination thereof, and R 1 to R 22 Each exists independently or two adjacent ones combine to form a ring, and m is 1 or 2. Claim 17 delete Claim 18 In claim 1, the infrared photoelectric conversion layer is a ternary sensor composed of the first material, the second material and the third material. Claim 19 In claim 1, the sensor in which the maximum external quantum efficiency wavelength of the infrared photoelectric conversion layer belongs to 800 nm to 1500 nm. Claim 20 A sensor according to claim 1, further comprising a first auxiliary layer located between the first electrode and the infrared photoelectric conversion layer, wherein the first auxiliary layer comprises a fourth material that is the same as or different from the third material, the energy bandgap of the fourth material is at least 1.0 eV larger than the energy bandgap of the first material, and the HOMO energy level of the fourth material is located between the work function of the first electrode and the HOMO energy level of the first material. Claim 21 A sensor comprising a first electrode and a second electrode, and an infrared photoelectric conversion layer located between the first electrode and the second electrode, wherein the infrared photoelectric conversion layer comprises a mixture of a first material having a maximum absorption wavelength in the infrared wavelength region, a second material forming a pn junction with the first material, and a third material represented by the following chemical formula 1, wherein the maximum absorption wavelength of the infrared photoelectric conversion layer is longer than the maximum absorption wavelength of the first material: [Chemical Formula 1] In the above chemical formula 1, L 1 and L 2 Each is independently a single bond, a substituted or unsubstituted C1 to C30 alkylene group, a substituted or unsubstituted C6 to C30 arylene group, or a combination thereof, and Ar 1 or Ar 4 Each is an independently substituted or unsubstituted C6 to C30 aryl group, and Ar 1 and Ar 2 Each exists independently or combines with others to form a ring, and Ar 3 and Ar 4 They each exist independently or combine with each other to form a ring, and R 1 to R 4 Each is independently hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted amine group, a substituted or unsubstituted C6 to C30 arylamine group, a halogen, a cyano group, or a combination thereof, and R 1 to R 4 Each exists independently or two adjacent ones combine to form a ring, and m is an integer from 0 to 2. Claim 22 In claim 21, the sensor wherein the maximum absorption wavelength of the infrared photoelectric conversion layer is at least 30 nm longer than the maximum absorption wavelength of the first material. Claim 23 In claim 21, the maximum external quantum efficiency wavelength of the infrared photoelectric conversion layer shifts in the direction of longer wavelengths as the content of the third material increases. Claim 24 In paragraph 23, the sensor comprises the third material in an amount of 1 to 40 volume% with respect to the total volume of the infrared photoelectric conversion layer. Claim 25 In paragraph 23, the sensor comprises the third material in an amount of 7 to 25 volume% with respect to the total volume of the infrared photoelectric conversion layer. Claim 26 In claim 21, the maximum absorption wavelength of the first material falls within 750 nm to 1200 nm, and the maximum absorption wavelength of the infrared photoelectric conversion layer falls within 1000 nm to 1500 nm. Claim 27 In claim 21, the third substance is a sensor represented by any one of the following chemical formulas 1-1 to 1-8: [Chemical Formula 1-1] [Chemical Formula 1-2] [Chemical Formula 1-3] [Chemical Formula 1-4] [Chemical Formula 1-5] [Chemical Formula 1-6] [Chemical Formula 1-7] [Chemical Formula 1-8] In the above chemical formulas 1-1 to 1-8, R 1 to R 22 Each is independently hydrogen, deuterium, a substituted or unsubstituted C1 to C30 alkyl group, a substituted or unsubstituted C1 to C30 alkoxy group, a substituted or unsubstituted C6 to C30 aryl group, a substituted or unsubstituted C3 to C30 heteroaryl group, a substituted or unsubstituted amine group, a substituted or unsubstituted C6 to C30 arylamine group, a halogen, a cyano group, or a combination thereof, and R 1 to R 22 Each exists independently or two adjacent ones combine to form a ring, and m is 1 or 2. Claim 28 In claim 21, the first material is a sensor comprising a metal phthalocyanine complex or a metal naphthalocyanine complex. Claim 29 An electronic device comprising a sensor according to any one of paragraphs 1 through 16 and paragraphs 18 through 28.

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