SiC SINGLE CRYSTAL FEBRICATIOM DEVICE

Abstract

The present invention relates to a SiC single crystal manufacturing apparatus, wherein a SiC single crystal manufacturing apparatus according to one aspect of the present invention comprises: a chamber; a seed holder portion located inside the chamber; a raw material gas introduction portion formed facing the seed holder portion; and a heater formed on the side of the chamber.

Description

Technology Field

[0001] The present invention relates to a SiC single crystal manufacturing apparatus. Background Technology

[0003] SiC single crystals are highly thermally and chemically stable, possess excellent mechanical strength and radiation resistance, and have superior physical properties such as high dielectric breakdown voltage and high thermal conductivity.

[0004] As for the growth methods for SiC single crystals that are highly useful, representative examples include the vapor phase method, the Acheson method, the solution method, and the representative CVD method.

[0005] For the growth of SiC single crystals via the CVD method, it is important to control the gas flow so that the source decomposed from the raw gas is smoothly supplied to the seed site, and various attempts are being proposed to achieve this. The problem to be solved

[0007] An apparatus for growing a single crystal through the CVD method includes a chamber comprising an inlet section for supplying raw material gas, an outlet section for discharging gas, and a seed holder for mounting a seed.

[0008] The conventional CVD-type SiC single-crystal growth apparatus structure had a problem in that it could not control internal flow rate and temperature, causing polycrystalline growth to occur in the seed where SiC single-crystal production was to take place.

[0009] One objective of the present invention is to provide a SiC single crystal manufacturing apparatus capable of effectively growing a SiC single crystal in the manufacturing process of a SiC single crystal component used as a component of a semiconductor manufacturing apparatus, etc.

[0010] In addition, the present invention aims to provide a SiC single crystal manufacturing apparatus that forms a gas flow for the ideal growth of a SiC single crystal.

[0011] In addition, the present invention aims to control the flow of gas and suppress clogging of the raw material gas inlet and outlet by improving the internal structure of the chamber of a SiC single crystal manufacturing apparatus.

[0012] In addition, the present invention aims to prevent polycrystalline SiC deposition in the seed.

[0013] However, the problems that the present invention aims to solve are not limited to those mentioned above, and other unmentioned problems will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0015] To solve the above problem, a device was devised that can grow high-quality SiC single crystals by controlling the flow rate in each region by varying the internal diameter of the chamber in each region, and thereby controlling the temperature in each region.

[0016] A SiC single crystal manufacturing apparatus according to one aspect of the present invention comprises: a chamber; a seed holder portion located inside the chamber; a raw material gas introduction portion formed facing the seed holder portion; and a heater formed on the side of the chamber.

[0017] The chamber includes a first region, a second region, and a third region, which are separated in order according to the direction of gas flow, and the temperature T1 of the first region, the temperature T2 of the second region, and the temperature T3 of the third region may be controlled differently.

[0018] The above T1 may be 1000 ℃ to 1600 ℃, the above T2 may be 1600 ℃ to 1800 ℃, and the above T3 may be 1800 ℃ to 2500 ℃.

[0019] The above T2 may be 100% to 180% of the above T1, and the above T3 may be 100% to 160% of the above T2.

[0020] The heater may be located on the side of the chamber.

[0021] The heater may be formed at a position corresponding to the second region on the side of the chamber.

[0022] In the chamber above, the inner diameter D1 of the first region, the inner diameter D2 of the second region, and the inner diameter D3 of the third region may be different from each other.

[0023] The above D1 may be 100 mm to 300 mm, the above D2 may be 80 mm to 200 mm, and the above D3 may be 250 mm to 800 mm.

[0024] The above D2 may be 50% or more and less than 100% of the above D1, and the above D3 may be 125% to 1000% of the above D2.

[0025] The first intermediate region where the first region and the second region are connected, and the second intermediate region where the second region and the third region are connected, may each be connected by a curved surface without a step.

[0026] The inner diameter D1 of the first region, the inner diameter D2 of the second region, and the inner diameter D3 of the third region may each be determined by any one selected from the group consisting of felt, graphite muffle, and graphite inner muffle on the inner surface of the chamber.

[0027] Based on the above gas flow direction, prior to the first region, a gas introduction region having a diameter of 60% to 90% of the inner diameter D1 of the first region may be further included.

[0028] It may further include an outlet formed on the outer part of the seed holder. Effects of the invention

[0030] According to one aspect of the present invention, a SiC single crystal manufacturing apparatus capable of effectively growing a SiC single crystal can be provided in the manufacturing process of a SiC single crystal component used as a component of a semiconductor manufacturing apparatus, etc.

[0031] In addition, according to one aspect of the present invention, a SiC single crystal manufacturing apparatus can provide a gas flow for the ideal growth of a SiC single crystal.

[0032] In addition, according to one aspect of the present invention, the flow of raw material gas inside the chamber of a SiC single crystal manufacturing apparatus is controlled so that clogging of the raw material gas introduction and discharge sections can be suppressed.

[0033] In addition, according to one aspect of the present invention, non-uniform deposition can be prevented in the growth of a SiC single crystal.

[0034] In addition, according to one aspect of the present invention, it is possible to prevent the ideal growth of a single crystal from being hindered by impurities, etc. around the seed. Brief explanation of the drawing

[0036] FIGS. 1a and 1b are cross-sectional views of a SiC single crystal manufacturing apparatus according to the prior art and the present invention. FIG. 2 is a cross-sectional view of a point where a heater is formed as an embodiment of the chamber of the present invention. FIG. 3 is a conceptual diagram showing the gas flow in a process for manufacturing a SiC single crystal using a SiC single crystal manufacturing apparatus according to the present invention. FIG. 4 is an open view of a SiC single crystal manufacturing apparatus of an embodiment of the present invention in which each region is connected by a curved surface. FIG. 5a is an optical microscope image of a SiC single crystal surface manufactured using conventional technology, and FIG. 5b is an optical microscope image of a SiC single crystal surface manufactured using the manufacturing apparatus of the present invention. FIG. 6a is a phase analysis graph of a SiC single crystal manufactured using conventional technology, and FIG. 6b is a phase analysis graph of a SiC single crystal manufactured using the manufacturing apparatus of the present invention. Specific details for implementing the invention

[0037] Hereinafter, embodiments are described in detail with reference to the attached drawings. However, various modifications may be made to the embodiments, and thus the scope of the patent application is not limited or restricted by these embodiments. It should be understood that all modifications, equivalents, and substitutions to the embodiments are included within the scope of the rights.

[0038] The terms used in the embodiments are for illustrative purposes only and should not be interpreted as intended to be limiting. Singular expressions include plural expressions unless the context clearly indicates otherwise. In this specification, terms such as "comprising" or "having" are intended to indicate the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0039] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as generally understood by those skilled in the art to which the embodiments pertain. Terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in this application.

[0040] In addition, when describing with reference to the attached drawings, identical components are assigned the same reference numeral regardless of the drawing symbols, and redundant descriptions thereof are omitted. In describing the embodiments, if it is determined that a detailed description of related prior art could unnecessarily obscure the essence of the embodiments, such detailed description is omitted. Furthermore, when describing the components of the embodiments, terms such as first, second, A, B, (a), (b), etc., may be used. These terms are intended merely to distinguish the components from other components, and the essence, order, or sequence of the components is not limited by these terms. Where it is stated that a component is "connected," "combined," or "joined" to another component, it should be understood that while the component may be directly connected or joined to the other component, another component may also be "connected," "combined," or "joined" between each component.

[0041] Components included in any one embodiment and components having common functions shall be described using the same names in other embodiments. Unless otherwise stated, the descriptions given in any one embodiment may also apply to other embodiments, and specific descriptions shall be omitted to the extent of overlap.

[0043] A SiC single crystal manufacturing apparatus according to one aspect of the present invention comprises: a chamber; a seed holder portion located inside the chamber; a raw material gas introduction portion formed facing the seed holder portion; and a heater formed on the side of the chamber.

[0044] To prevent chamber clogging, ensure the stability (uniformity) of SiC single crystal growth, and maintain a uniform (supply) gas ratio, it is necessary to control the flow of deposition gas within the chamber; as a means to achieve this, it is necessary to control the temperature of specific parts within the chamber. The SiC single crystal manufacturing apparatus of the present invention enables ideal gas flow control within the chamber by including a heater formed in a specific part of the chamber.

[0046] FIGS. 1a and 1b are cross-sectional views of a SiC single crystal manufacturing apparatus according to the prior art and the present invention. Referring to FIGS. 1a and 1b, the gas flow in the SiC single crystal manufacturing process is explained as follows: according to the prior art, the gas flow is not properly controlled, so efficient growth of the SiC single crystal relative to the introduced gas is not achieved. However, according to the SiC single crystal manufacturing apparatus according to the present invention, raw gas is introduced into the chamber through the nozzle (10) of the gas introduction section (20) formed at the bottom of the chamber, and as it rises to the reaction temperature through a heater located on the side of the chamber, it is decomposed and changed into a reaction gas used for the SiC single crystal growth reaction. The reaction gas reacts with the seed of the seed holder in the section where the seed holder (30) is placed to grow the SiC single crystal, and the remaining residual gas is discharged through the exhaust section (40). As described in detail below, this gas flow can be controlled by controlling the temperature of each section and the inner diameter of each section. When using a single precursor, the above raw gas is MTS (Methyltrichlorosilane), and when using a binary gas, a Si raw gas (Silane, SiCl4, etc.) and a C raw gas (Methane, Propane, etc.) may be mixed. The flow rate of the above raw gas may be 10 slm to 200 slm. Mounting of the above seed may be performed through a seed holder made of graphite material, having an attachment surface of the same size (4” to 6”, etc.) as the seed and a thickness of 10 mm or more.

[0048] The chamber includes a first region, a second region, and a third region, which are separated in order according to the direction of gas flow, and the temperature T1 of the first region, the temperature T2 of the second region, and the temperature T3 of the third region may be controlled differently.

[0049] From the bottom of the chamber where the raw gas is introduced, it can be divided into three regions according to temperature. Referring to FIG. 1b, the temperature of the next region (section) is maintained relatively higher than the temperature T1 of the region (section) where the raw gas is introduced. This is achieved by maintaining the temperature of the first region lower than the temperature of the second region through the insulating material present in the first and second regions, thereby preventing the formation of abnormally high temperatures in the first region. To this end, a heater is included on the side of the chamber corresponding to the second region. Although not limited thereto, to explain as an example with reference to FIG. 1b, the first region may be the part where the inner diameter widens from the gas introduction section at the bottom, the second region may be the part above that which becomes a narrow passage, and the third region may be the wide space above that where the seed holder is placed. That is, in FIG. 1b, as an example, a heater is formed in the second region (including a part of the upper part of the first region and a part of the lower part of the third region).

[0050] In FIG. 1b, the heater is formed by dividing it into upper and lower sections, but this is merely an example, and the number and arrangement of the formed heaters may be one or two or more depending on the size of the chamber.

[0051] FIG. 2 is a cross-sectional view of a point where a heater is formed as an embodiment of the chamber of the present invention. Referring to FIG. 2, the heater (104) may be formed as a single ring shape on the outer side of the chamber (102) as shown in FIG. 2, or it may be formed as several (not shown) separate heaters.

[0053] The above T1 may be 1000 ℃ to 1600 ℃, the above T2 may be 1600 ℃ to 1800 ℃, and the above T3 may be 1800 ℃ to 2500 ℃.

[0054] The temperature T1 of the first region corresponding to the lower part of the chamber based on the gas flow may be 1000 ℃ to 1600 ℃, and if T1 is lower than 1000 ℃, the raw gas is not decomposed in the first region, and if T1 is higher than 1600 ℃, the raw gas is deposited in the first region, which may cause a depletion effect of the raw material.

[0055] The temperature T2 of the second region, which corresponds to the region before the actual SiC single crystal growth region, may be 1600°C to 1800°C, and if T2 is lower than 1600°C, the source gas reacts in the second region and a deposit is generated, which may cause a problem of clogging in the second region. The temperature T2 of the second region is intended to form a temperature gradient between the temperature T1 of the first region, which is a low-temperature region, and the temperature T3 of the third region, which is a high-temperature region for reaction, and if T2 is higher than 1800°C, there may be a problem of difficulty in controlling the temperature of the first region.

[0056] The seed holder is included, and the temperature T3 of the third region, which is the region where an actual SiC single crystal grows in the seed holder, may be 1800 ℃ to 2500 ℃. If T3 is lower than 1800 ℃, there may be a problem with polycrystalline growth, and if T3 is higher than 2500 ℃, there may be a problem with the grown SiC single crystal sublimating.

[0058] The above T2 may be 100% to 180% of the above T1, and the above T3 may be 100% to 160% of the above T2.

[0059] For ideal gas flow control, it is desirable to control the temperatures of regions within the chamber, and it may be necessary to control the relative values ​​between the temperatures of each region (section).

[0060] That is, the temperature T2 of the second region, which corresponds to the region before the actual SiC single crystal growth region, may be 100% to 180% of the temperature T1 of the first region, which is the immediate region based on the gas flow. If T2 is lower than 100% of T1, the source gas may react in the second region and deposits may be generated, and there may be a problem of clogging in the second region. If T2 is higher than 180% of T1, there may be a problem of not forming a temperature gradient with the third region.

[0061] In addition, the temperature T3 of the third region, which includes a seed holder and is the region where an actual SiC single crystal grows in the seed holder, may be 100% to 160% of the previous region T2 based on the gas flow. If T3 is lower than 100% of T2, there may be a problem of quality degradation due to polycrystalline growth, and if T3 is higher than 160% of T2, there may be a problem of the reaction not occurring in the reaction section and escaping as exhaust.

[0063] The heater may be located on the side of the chamber. Since the heater is intended to control the temperature of a certain section (region) within the chamber to a set temperature (target temperature), it may be formed on the side of the chamber. However, it is not limited thereto, and may be formed on one or more parts selected from the group consisting of the side, bottom, and top of the chamber.

[0065] The heater may be formed at a position corresponding to the second region on the side of the chamber. As described above, since raw material gas is introduced into the lower part of the chamber to grow a SiC single crystal in the seed holder and the remaining gas is discharged through the upper discharge port, it is necessary to control the temperature immediately before the region where actual deposition occurs to be relatively high; therefore, the heater may be formed at a position corresponding to the second region, which is the region before the region where the actual SiC single crystal grows. As shown in FIG. 2, the heater may be formed as a single ring shape on the outer side of the chamber, or multiple separate heaters may be formed on the outer side of the chamber.

[0067] FIG. 3 is a conceptual diagram showing the gas flow in a process for manufacturing a SiC single crystal using a SiC single crystal manufacturing apparatus according to the present invention.

[0068] Referring to FIG. 3, the gas flow is described exemplarily as follows: when gas flows from a first region to a second region of the chamber, the second region is maintained at a high temperature by a heater formed in the second region, and as a result, the raw gas is introduced into a third region without consuming the raw gas in the second region. This prevents polycrystalline growth occurring on the crystal growth surface, thereby improving the quality of the crystal.

[0070] In the chamber above, the inner diameter D1 of the first region, the inner diameter D2 of the second region, and the inner diameter D3 of the third region may be different from each other.

[0071] The present invention allows for the control of gas flow by forming different inner diameters from the lower part of the chamber where raw gas is introduced to the upper part of the chamber where residual gas is discharged, based on the gas flow, thereby enabling ideal deposition and SiC single crystal growth in a seed holder.

[0073] The above D1 may be 100 mm to 300 mm, the above D2 may be 80 mm to 200 mm, and the above D3 may be 250 mm to 800 mm.

[0074] The above D2 may be 50% or more and less than 100% of the above D1, and the above D3 may be 125% to 1000% of the above D2.

[0075] For ideal gas flow control, it is desirable to control the gas flow in regions within the chamber, and it may be necessary to control the relative values ​​between the inner diameters of each region (section).

[0076] That is, the inner diameter D2 of the second region, which corresponds to the region before the actual SiC single crystal growth region, may be 50% or more and less than 100% of the inner diameter D1 of the first region, which is the section immediately preceding it based on the gas flow. However, if D2 is smaller than 50% of D1 or larger than 100% of D1, it may be difficult to control the flow rate of the second region, and consequently, there may be a problem in that it becomes difficult to control the temperature.

[0077] Additionally, the inner diameter D3 of the third region, which includes a seed holder and is the region where an actual SiC single crystal grows in the seed holder, may be 125% to 1000% of the immediate preceding region D2 based on the gas flow. If D3 is smaller than 125% of D2, a decrease in temperature due to an increase in the flow velocity around the seed may occur, which may lead to polycrystalline growth. If D3 is larger than 1000% of D2, the gas flow changes abruptly, preventing the gas from proceeding smoothly to the seed, which may result in a problem of reduced growth rate.

[0079] The first intermediate region where the first region and the second region are connected, and the second intermediate region where the second region and the third region are connected, may each be connected by a curved surface without a step.

[0080] The connection between the first region and the second region in the first intermediate region where the first region and the second region are connected, the connection between the second region and the third region in the second intermediate region where the second region and the third region are connected, and furthermore, the connection between the first region and the lower intermediate region where the gas introduction region corresponding to the region prior to the first region described below is connected to the first region in the lower intermediate region where the first region is connected, may each be connected by a curved surface without a step.

[0081] FIG. 4 is an open view of a SiC single crystal manufacturing apparatus according to an embodiment of the present invention in which each region is connected by a curved surface. Referring to FIG. 4, the connection between the first region and the second region in a first intermediate region where the first region and the second region are connected, the connection between the second region and the third region in a second intermediate region where the second region and the third region are connected, and furthermore, the connection between the first region and the lower intermediate region where the gas introduction region corresponding to the region prior to the first region, which will be described below, is connected by a smooth curved surface without a step, but the present invention is not limited thereto, and one or more of the connections between regions in the first intermediate region, the connections between regions in the second intermediate region, and the connections between regions in the lower intermediate region may be connected by a smooth curved surface, and if necessary, the remaining connections may include a step.

[0083] The inner diameter D1 of the first region, the inner diameter D2 of the second region, and the inner diameter D3 of the third region may each be determined by any one selected from the group consisting of felt, graphite muffle, and graphite inner muffle on the inner surface of the chamber.

[0084] By using the above material in each area, it is possible to control the required temperature range in each area, and the transfer of temperature from the high-temperature area to the low-temperature area can be minimized.

[0085] Based on the above gas flow direction, prior to the first region, a gas introduction region having a diameter of 60% to 90% of the inner diameter D1 of the first region may be further included.

[0086] The raw material gas may be directly introduced into the chamber by means of a nozzle without a gas introduction area, and may further include a gas introduction area having a diameter of 60% to 90% of the inner diameter D1 of the first area before the first area based on the direction of gas flow.

[0088] The above seed holder may be a seed holder formed in the upper region of the chamber.

[0090] It may further include an outlet formed on the outer part of the seed holder. The arrangement of such an outlet can facilitate gas flow, and as a result, may have the effect of suppressing abnormal growth.

[0091] The internal space of the chamber is preferably shaped so that gas flow can flow from the center to the periphery, but if the outlet is located on the side, it may not be desirable as it does not flow in the direction of the crystal growth region (seed). Therefore, the outlet may be located perpendicular to the back of the seed holder or on the outside of the seed holder.

[0093] The present invention will be explained in more detail below through examples.

[0094] However, the following examples are merely for illustrating the present invention, and the content of the present invention is not limited to the following examples.

[0096] The following examples (manufacturing process conditions) will be explained, but the present invention is not limited thereto. As merely exemplary examples, a SiC single crystal manufacturing process was performed in a chamber with the specifications and temperature conditions of each region of Table 1 below.

[0097] zone Temperature (°C) Diameter (mm) Zone 1 1300 200 Zone 2 1700 150 Zone 3 1900 500

[0098] The raw gas and flow rate conditions are as follows.

[0100] (1) Raw material gas for SiC synthesis: MTS.

[0101] (2) Flow rate of raw gas for SiC synthesis: 100 slm

[0102] The seed mounting was performed using a seed holder made of graphite material, having a 4-inch mounting surface identical to the seed and a thickness of 10 mm.

[0103] (3) Process method:

[0104] The seed was mounted in the seed holder at the center of the top of the reaction chamber (region 3), and the entire reaction crucible was assembled to maintain airtightness. Vacuum evacuation (10 at initial start) -1 (less than torr) was performed, and the temperature was raised to the deposition temperature.

[0106] Comparative example

[0107] The SiC single crystal manufacturing process was performed in a chamber with the specifications and temperature conditions of each region shown in Table 2 below.

[0108] zone Temperature (°C) Diameter (mm) The entire interior of the chamber 1900 500

[0109] The raw gas and flow rate conditions are as follows.

[0111] (1) Raw material gas for SiC synthesis: MTS.

[0112] (2) Flow rate of raw gas for SiC synthesis: 100 slm

[0113] The seed mounting was performed using a seed holder made of graphite material, having a 4-inch mounting surface identical to the seed and a thickness of 10 mm.

[0114] (3) Process method:

[0115] The seed was mounted in the seed holder at the center of the top of the reaction chamber, and the entire reaction crucible was assembled to maintain airtightness. Vacuum evacuation (10 at initial start) -1 (less than torr) was performed, and the temperature was raised to the deposition temperature.

[0117] The measurement results of the SiC single crystal properties of the examples and comparative examples manufactured in this way are as follows.

[0119] FIG. 5a is an optical microscope image of a SiC single crystal surface manufactured using the prior art (comparative example), and FIG. 5b is an optical microscope image of a SiC single crystal surface manufactured using the manufacturing apparatus of the present invention (example).

[0120] Referring to FIGS. 5a and 5b, it can be seen that the SiC single crystal produced by the manufacturing apparatus of the present invention has improved surface modification compared to the SiC single crystal produced by the prior art.

[0122] FIG. 6a is a phase analysis graph of a SiC single crystal manufactured using the prior art (comparative example), and FIG. 6b is a phase analysis graph of a SiC single crystal manufactured using the manufacturing apparatus of the present invention (example).

[0123] Referring to FIGS. 6a and 6b, it can be seen that the SiC single crystal produced by the manufacturing apparatus of the present invention has eliminated the graphite and polycrystalline SiC peaks, such as 15R-SiC and 6H-SiC, that occur in SiC single crystals produced by the prior art. This means that a pure single crystal can be obtained with minimal impurity incorporation.

[0125] Although embodiments have been described as above, those skilled in the art can apply various technical modifications and variations based on the above. For example, suitable results can be achieved even if the described techniques are performed in a different order than described, and / or the components of the described system, structure, device, circuit, etc. are combined or assembled in a form different from described, or replaced or substituted by other components or equivalents.

[0126] Therefore, other implementations, other embodiments, and equivalents to the claims also fall within the scope of the claims set forth below.

Claims

Claim 1 A SiC single crystal manufacturing apparatus comprising: a chamber; a seed holder portion located inside the chamber; a raw material gas introduction portion formed facing the seed holder portion; and a heater formed on the side of the chamber; wherein the chamber comprises a first region, a second region, and a third region separated in order according to the direction of gas flow, and the temperature T1 of the first region, the temperature T2 of the second region, and the temperature T3 of the third region are controlled differently, and the chamber comprises an inner diameter D1 of the first region, an inner diameter D2 of the second region, and an inner diameter D3 of the third region, wherein D2 is 50% or more and less than 100% of D1, and D3 is 125% to 1000% of D2. Claim 2 delete Claim 3 A SiC single crystal manufacturing apparatus according to claim 1, wherein T1 is 1000 ℃ to 1600 ℃, T2 is 1600 ℃ to 1800 ℃, and T3 is 1800 ℃ to 2500 ℃. Claim 4 A SiC single crystal manufacturing apparatus according to claim 1, wherein T2 is 100% to 180% of T1 and T3 is 100% to 160% of T2. Claim 5 delete Claim 6 A SiC single crystal manufacturing apparatus according to claim 1, wherein the heater is formed at a position corresponding to the second region among the sides of the chamber. Claim 7 delete Claim 8 A SiC single crystal manufacturing apparatus according to claim 1, wherein D1 is 100 mm to 300 mm, D2 is 80 mm to 200 mm, and D3 is 250 mm to 800 mm. Claim 9 delete Claim 10 A SiC single crystal manufacturing apparatus according to claim 1, wherein the first intermediate region connecting the first region and the second region, and the second intermediate region connecting the second region and the third region, are each connected by a curved surface without a step. Claim 11 A SiC single crystal manufacturing apparatus according to claim 1, wherein the inner diameter D1 of the first region, the inner diameter D2 of the second region, and the inner diameter D3 of the third region are each determined by any one selected from the group consisting of felt, graphite muffle, and graphite inner muffle on the inner surface of the chamber. Claim 12 A SiC single crystal manufacturing apparatus according to claim 1, further comprising, before the first region based on the gas flow direction, a gas introduction region having a diameter of 60% to 90% of the inner diameter D1 of the first region. Claim 13 A SiC single crystal manufacturing apparatus according to claim 1, wherein the seed holder is a seed holder formed in the upper region of the chamber. Claim 14 A SiC single crystal manufacturing apparatus according to claim 1, further comprising an outlet formed in the outer part of the seed holder.

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