Apparatus for processing substrate

Abstract

The present invention provides a substrate processing apparatus comprising: a stage positioned to be movable on a bed; and a porous adsorption part mounted on the upper part of the stage to correspond to an area on which a wafer is placed; wherein, when a vacuum adsorption force is applied to the stage, the bottom surface of the wafer is vacuum adsorbed by the vacuum adsorption force transmitted to the upper surface of the porous adsorption part, and the porous adsorption part is formed at a set height at least higher than the upper surface of the stage.

Description

Technology Field

[0001] The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus capable of applying a perovskite material to a plurality of substrates. Background Technology

[0002] Solution process and vacuum evaporation are used as innovative manufacturing processes for solar cells and displays, and solution process is widely used because it has the advantage of reducing manufacturing costs by about 40% compared to vacuum evaporation.

[0003] These solution processes are broadly divided into printing and coating, and printing technologies such as inkjet, nozzle, gravure, and offset are mainly applied in the field of electronic devices requiring direct patterning.

[0004] In particular, inkjet printing technology is mainly applied to the formation of pixels in mobile display panels, but maintenance issues such as relatively slow coating speed, usage limitations due to solution viscosity, and nozzle clogging are emerging.

[0005] In contrast, coating processes are suitable for forming large-area thin films that do not require fine patterns and have the advantage of being relatively easy to maintain and repair. Examples of such coating technologies include slot die coating, spin coating, blade coating, bar coating, dip coating, and spray coating.

[0006] Among these various coating methods, slot die coating has the advantage of being able to form a uniform coating film over a large area and coat multiple layers at once through design, as well as being hardly affected by the viscosity of the ink, and is widely used mainly in perovskite and organic solar cells, thin-film batteries, and secondary batteries because of its fast coating speed and ease of expansion to roll-to-roll coating.

[0007] However, during the slot die coating process, a problem has been raised where the wafer placed on the stage detaches from the stage due to inertia caused by the stage's movement. Furthermore, although an improved technology was developed to fix the wafer by providing limited vacuum suction force to a set area on the stage to address this issue, the wafer still lifts between the vacuum and non-vacuum regions, resulting in uneven coating thickness. Prior art literature

[0008] Korean Patent Publication No. 10-1841530 (Registered on March 19, 2018) The problem to be solved

[0009] The present invention aims to solve such problems, and more specifically, to provide a substrate processing apparatus capable of vacuum adsorbing a plurality of substrates over the entire surface area on a stage.

[0010] The problems of the present invention are not limited to those mentioned above, and other unmentioned objectives will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0011] To achieve the above objective, the present invention provides a substrate processing apparatus comprising: a stage positioned to be movable on a bed; and a porous adsorption unit mounted on the upper part of the stage to correspond to an area on which a wafer is placed; wherein, when a vacuum adsorption force is applied to the stage, the bottom surface of the wafer is vacuum adsorbed by the vacuum adsorption force transmitted to the upper surface of the porous adsorption unit, and the porous adsorption unit is formed at a set height at least higher than the upper surface of the stage.

[0012] The above stage may include a vacuum channel formed concavely from the upper surface to form a vacuum adsorption force inside, and a step portion that supports the porous adsorption portion to maintain a set gap inside the vacuum channel.

[0013] The set gap between the above stage and the porous adsorption part can be formed in the range of 0.3 to 1.2 mm.

[0014] The height of the porous adsorption part protruding upward from the upper surface of the stage can be formed in the range of 0.3 to 1 mm.

[0015] The above porous adsorption portion can absorb at least a portion of the perovskite material sprayed onto the upper surface of the wafer during the coating process through the outer region exposed on the side due to the above-determined height.

[0016] The above porous adsorption portion may be formed to be at least the same size as the wafer or smaller.

[0017] The porous adsorption portion may include a downwardly inclined surface extending from the outer lower region of the wafer toward the stage.

[0018] The above inclined surface may be formed at an angle range of 45 to 90° with respect to the bottom surface of the stage.

[0019] The above porous adsorption part is made of a ceramic material and may have a pore size in the range of 1 to 3 μm.

[0020] The above porous adsorption part can be formed with a porosity in the range of 30 to 50%.

[0021] Specific details of other embodiments are included in the detailed description and drawings. Effects of the invention

[0022] According to the substrate processing apparatus according to an embodiment of the present invention,

[0023] First, by mounting a porous adsorption unit on the stage, vacuum adsorption force can be applied to the entire bottom surface area of ​​the wafer, and

[0024] Second, as vacuum suction force is transmitted to the entire bottom surface of the wafer, the wafer can be fixed more firmly, preventing it from being removed from the stage, and

[0025] Third, the porous adsorption part is mounted so as to protrude above the stage to absorb the exposure of perovskite droplets to the outside of the wafer, and

[0026] Fourth, it has the effect of preventing the bottom surface of the next wafer to be supplied continuously from being contaminated.

[0027] The effects of the present invention are not limited to those mentioned above, and other unmentioned effects will be clearly understood by those skilled in the art from the description in the claims. Brief explanation of the drawing

[0028] The summary described above, as well as the detailed description of the preferred embodiments of the present application described below, will be better understood when read in conjunction with the accompanying drawings. Preferred embodiments are illustrated in the drawings for the purpose of illustrating the invention. However, it should be understood that the present application is not limited to the exact arrangements and means illustrated. FIG. 1 is a block diagram schematically illustrating a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is an enlarged perspective view illustrating a stage on which a wafer is placed in a substrate processing apparatus according to one embodiment of the present invention. FIG. 3 is a longitudinal section showing the AA' cross-section of the stage of the substrate processing device shown in FIG. 2. Figure 4 is a reference diagram showing an enlarged view of one side of the stage of the substrate processing device shown in Figure 3. FIG. 5 is a cross-sectional view illustrating a stage of a substrate processing apparatus according to another embodiment of the present invention. Figure 6 is a reference diagram showing an enlarged view of one side of the stage of the substrate processing apparatus shown in Figure 5. Specific details for implementing the invention

[0029] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. The advantages and features of the present invention, and the methods for achieving them, will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but can be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Throughout the specification, the same reference numerals refer to the same components.

[0030] The present invention is capable of various modifications and may have various embodiments, and specific embodiments are illustrated and described in the drawings.

[0031] However, this is not intended to limit the invention to specific embodiments, and it should be understood that it includes all modifications, equivalents, and substitutions that fall within the spirit and scope of the invention.

[0032] Terms including ordinal numbers, such as first, second, etc., may be used to describe various components, but said components are not limited by said terms.

[0033] The above terms are used solely for the purpose of distinguishing one component from another.

[0034] For example, without departing from the scope of the present invention, the second component may be named the first component, and similarly, the first component may be named the second component.

[0035] The term "and / or" includes a combination of multiple related listed items or any of the multiple related listed items.

[0036] When it is stated that one component is "connected" or "joined" to another component, it should be understood that while it may be directly connected or joined to that other component, there may also be other components in between.

[0037] On the other hand, when it is stated that one component is "directly connected" or "directly coupled" to another component, it should be understood that there are no other components in between.

[0038] The terms used in this application are used merely to describe specific embodiments and are not intended to limit the invention.

[0039] Singular expressions include plural expressions unless the context clearly indicates otherwise.

[0040] In this application, terms such as "comprising" or "having" are intended to specify the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0041] Hereinafter, embodiments will be described in detail with reference to the attached drawings, provided that identical or corresponding components are given the same reference number regardless of the drawing symbols, and redundant descriptions thereof will be omitted.

[0042] FIG. 1 is a block diagram schematically illustrating a substrate processing apparatus according to an embodiment of the present invention.

[0043] Referring to FIG. 1, a substrate processing apparatus (1) according to an embodiment of the present invention performs loading, vision align, and a primary wafer transfer (1 st wafer transfer), wafer thickness sensing, coating, secondary wafer transfer (2 nd It can be processed through wafer transfer), drying, vision inspection, and unloading processes.

[0044] First, the loading (10) process can be supplied with a wafer cut to a set size.

[0045] After capturing the alignment status of the loaded wafer through the vision alignment (20), the wafer can be checked to see if it is loaded in the correct position, and if the wafer is not in the correct position, a predetermined position correction can be performed.

[0046] The wafer with the position correction completed can be transferred to the upper stage via the first wafer transfer (30).

[0047] Then, the stage moves at a set speed along the direction of travel, and at this time, the wafer thickness measurement (40) process can be performed while passing the sensor unit. Here, in the wafer thickness measurement (40) process, not only the wafer thickness is measured, but the height between the current wafer surface and the sensor unit can also be measured. That is, by measuring the total height of the wafer placed on the upper surface of the stage, the height change due to the difference in wafer thickness can be measured, or the height change due to the horizontal state of the stage can also be measured together.

[0048] When the process of measuring the thickness of the wafer (40) is completed through the sensor unit, the head unit for spraying the perovskite material based on the thickness or height information measured by the sensor unit for the coating (50) process can be moved adjacent to the upper surface of the wafer through the lifting unit. At this time, the head unit can descend to a point set in the direction of the wafer along the z-axis.

[0049] In this way, while the gap set between the wafer and the head part is maintained, the head part can spray a perovskite material to perform a coating (50) process.

[0050] The wafer after the coating (50) process is completed can be returned to a dryer via a secondary wafer transfer (60).

[0051] A wafer placed on a dryer can undergo a drying process (70).

[0052] Once the drying (70) process is completed, the inspection (80) process of the coating result on the wafer can be performed.

[0053] And, after checking the quality of the coating result in the inspection (80) process, the wafer can be unloaded (90).

[0054] The wafer processed in this way can be used as a substrate of various forms through additional processing steps. For example, in this embodiment, the wafer can be used as a substrate coated with a liquid perovskite material using a thin silicon wafer during the process of manufacturing a tandem solar cell. Such a substrate has the advantage of maximizing power generation efficiency by allowing the perovskite and silicon to complementarily absorb light in different ranges.

[0055] To briefly explain the tandem solar cell described above, a tandem solar cell (not shown) may include a plurality of solar cells. For example, the tandem solar cell may include a first solar cell and a second solar cell disposed on the first solar cell.

[0056] The first solar cell may include any one of various solar cells, such as crystalline silicon (Si) solar cells, polycrystalline silicon solar cells, CIGS-based solar cells, perovskite solar cells, gallium arsenide (GaAs) solar cells, dye-sensitized solar cells, organic solar cells, and compound solar cells.

[0057] The second solar cell may include a perovskite solar cell. The second solar cell may include a recombination layer, a hole transport layer, a perovskite light absorption layer, an electron transport layer, and an upper electrode layer.

[0058] The recombination layer (not shown) may be a layer that induces the recombination of electrons and holes generated in at least one of the first solar cell and the perovskite light absorption layer.

[0059] The perovskite light absorption layer may be disposed on the recombination layer. The perovskite light absorption layer may include a perovskite material as the light absorption layer.

[0060] The upper electrode layer may be disposed on a perovskite light absorption layer. The upper electrode layer may include a transparent electrode in the region where light is incident.

[0061] A hole transport layer can be placed between the recombination layer and the perovskite light absorption layer. The hole transport layer can be a layer that transports holes formed in the perovskite light absorption layer and blocks the movement of electrons.

[0062] An electron transport layer can be disposed between the perovskite light absorption layer and the upper electrode layer. The electron transport layer may be a layer that transports electrons formed in the perovskite light absorption layer and blocks holes.

[0063] The substrate processing device (1) according to the embodiment may be a device for manufacturing a second solar cell. Specifically, the substrate processing device (1) according to the embodiment may be a device for forming a perovskite light absorption layer.

[0064] Additionally, the substrate processing device (1) according to the embodiment may be a device for manufacturing a single solar cell. Here, a single solar cell refers to a solar cell comprising a single solar cell, rather than a structure comprising multiple solar cells, such as a first and second solar cell, as described above for a tandem solar cell. Specifically, the substrate processing device (1) according to the embodiment may be a device for forming a light absorption layer included in a perovskite solar cell.

[0065] FIG. 2 is an enlarged perspective view showing the stage on which a wafer is placed in the substrate processing apparatus according to FIG. 1.

[0066] Referring to FIG. 2, the substrate processing device (1) may include a stage (100) and a porous adsorption part (120).

[0067] First, the stage (100) can be positioned so as to be able to move back and forth along the direction of travel on the bed (110).

[0068] Although not shown in the drawing, the stage (100) may be positioned to pass under the sensor part (not shown) and the head part (see FIG. 3, 400) while moving along the direction of travel. At this time, the stage (100) is equipped with a porous adsorption part (120) on its upper surface and can move while adsorbing a wafer (W) onto the upper surface of the porous adsorption part (120). Therefore, since the stage (100) moves while fixing the entire area of ​​the wafer (W) using vacuum adsorption force on the porous adsorption part (120), it is possible to prevent the wafer (W) from being removed from the stage (100) during the movement.

[0069] Additionally, the stage (100) can move along a guide rail (111) provided on the bed (110) with a plurality of wafers (W) mounted side by side on the upper side.

[0070] The porous adsorption part (120) may be formed with the same size and shape as the wafer (W) placed on the upper surface, or the upper surface may be formed to be smaller than the wafer (W). Specifically, the diameter of the upper surface of the porous adsorption part (120) may be equal to the diameter of the wafer (W) or smaller than the wafer (W) within a range of 95% or more. For example, if the diameter of the porous adsorption part (120) is larger than the diameter of the wafer (W), the solution may penetrate outside the wafer (W) and be absorbed into the porous adsorption part (120), but there is a possibility of contaminating the bottom surface of the wafer (W) that is continuously moving. In addition, if the upper surface diameter of the porous adsorption part (120) is less than 95% of the diameter of the wafer (W), when the solution penetrates outside the wafer (W), the solution is not supplied to the porous adsorption part (120), and due to surface tension, the solution may penetrate to the bottom surface of the wafer (W), thereby contaminating the wafer (W). Specifically, to prevent contamination of the wafer (W), the diameter of the upper surface of the porous adsorption part (120) may be equal to the diameter of the wafer (W) or smaller than the wafer (W) within a range of 97% or more. More preferably, the diameter of the upper surface of the porous adsorption part (120) may be equal to the diameter of the wafer (W) or smaller than the wafer (W) within a range of 99% or more.

[0071] The porous adsorption part (120) may be made of a ceramic material and may have a pore size in the range of 1 to 3 μm. Additionally, the porous adsorption part (120) may be formed with a porosity in the range of about 30 to 50%. It is more preferable for the porous adsorption part (120) to have a pore size of about 2 μm and a porosity of about 40%, and may be further processed to prevent antistatic finishing and scratches.

[0072] FIG. 3 is a cross-sectional view illustrating a cross-section of a stage of a substrate processing device according to one embodiment of the present invention, and FIG. 4 is a reference view illustrating an enlarged view of one side portion of the stage of the substrate processing device shown in FIG. 3.

[0073] Referring to FIGS. 3 and 4, the porous adsorption part (120) of a substrate processing device according to one embodiment of the present invention may have an outer side (121) positioned perpendicular to the upper or lower surface. At this time, the porous adsorption part (120) may be formed in the shape of a roughly thin plate or disc, and the upper surface of the porous adsorption part (120) may be formed with the same size and shape as the wafer (W).

[0074] Additionally, the porous adsorption part (120) can be detachably mounted on the upper surface of the stage (100). The porous adsorption part (120) can be mounted at a height (h1) that is at least higher than the upper surface of the stage (100). The height (h1) at which the porous adsorption part (120) protrudes upward from the upper surface of the stage (100) can be formed in the range of about 0.3 to 1 mm.

[0075] As the porous adsorption part (120) is mounted at a set height (h1) above the upper surface of the stage (100), the outer region where the side of the porous adsorption part (120) is exposed on the upper surface of the stage (100) can absorb at least some of the perovskite material sprayed onto the upper surface of the wafer (W) during the coating process. That is, vacuum adsorption force can be transmitted to the outer region exposed on the side (121) of the porous adsorption part (120). Therefore, it is possible to prevent the perovskite solution from encroaching outward from the porous adsorption part (120).

[0076] And, the stage (100) may include a vacuum channel (101) and a step portion (102).

[0077] The vacuum channel (101) may be a region formed concavely from the upper surface and in which vacuum adsorption force is formed inside.

[0078] The vacuum channel (101) can be formed to have a pattern set to transmit vacuum adsorption force to the entire bottom surface area of ​​the porous adsorption part (120) by forming a gap (h2) set between the stage (100) and the porous adsorption part (120). At this time, the size of the set gap (h2) of the vacuum channel (101) can be formed in the range of about 0.3 to 1.2 mm. More preferably, a more uniform vacuum adsorption force can be formed when the set gap (h2) is formed to about 0.5 to 1 mm. The vacuum channel (101) can be formed to have a set gap (h2) of a constant size between the porous adsorption part (120) and the stage (100).

[0079] Additionally, although not shown in the drawing, the set gap (h2) of the vacuum channel (101) may be formed in an inclined surface, a stepped surface, a wave shape, etc., so as to slope downward from the outer region of the vacuum channel (101) toward the main channel (101a) formed to penetrate the stage (100). This structure can provide a uniform vacuum suction force from the main channel (101a) to the outer edge of the vacuum channel (101).

[0080] Additionally, the step portion (102) can provide the function of supporting the bottom surface of the porous adsorption portion (120) so that the porous adsorption portion (120) maintains a set gap (h2) inside the vacuum channel (101). Although not shown in the drawing, the step portion (102) may also be provided at a position corresponding to the center area of ​​the bottom surface of the porous adsorption portion (120).

[0081] FIG. 5 is a cross-sectional view illustrating a cross-section of a stage of a substrate processing apparatus according to another embodiment of the present invention, and FIG. 6 is a reference view illustrating an enlarged view of one side portion of the stage of the substrate processing apparatus shown in FIG. 5.

[0082] Referring to FIGS. 5 and 6, the stage (100) of the substrate processing device according to another embodiment of the present invention is identical to the stage (100) of the above-described embodiment of the present invention, so a redundant description is omitted.

[0083] In another embodiment of the present invention, the porous adsorption part (220) of the substrate processing device may have an inclined surface (221) and a connecting surface (223) formed on the outer side.

[0084] The inclined surface (221) may be located between the upper surface and the lower surface of the porous adsorption part (220). The inclined surface (221) may be located between the upper surface and the connecting surface (223) of the porous adsorption part (220). The inclined surface (221) may be formed with a downward slope such that the cross-sectional area widens from the top to the bottom in the outer region of the porous adsorption part (220).

[0085] The angle of inclination (θ) of the inclined surface (221) can be formed in the range of 45 to 90° with respect to the bottom surface of the porous adsorption part (220) or the bottom surface of the stage (100). When this angle of inclination (θ) is expressed as a ratio of the vertical height to the angle of inclination (221) of the porous adsorption part (220), it can be expressed as approximately 0.707 to 1.0.

[0086] Therefore, the inclined surface (221) increases the surface area of ​​the porous adsorption part (220) from the outer edge of the wafer (W), thereby increasing the area capable of absorbing droplets of perovskite sprayed from the head part toward the wafer (W). Of course, since the inclined surface (221) increases the area capable of absorption, the contamination of the outer region of the porous adsorption part (220) by droplets of perovskite can be minimized.

[0087] In this embodiment, the angle of the inclined surface is formed at 45° with respect to the bottom surface of the stage (100) as an example.

[0088] The connecting surface (223) may be located between the inclined surface (221) and the bottom surface of the porous adsorption part (220). The connecting surface (223) may be positioned in an area corresponding to the stepped portion (102). The connecting surface (223) may have a uniform cross-sectional area from top to bottom in the outer area of ​​the porous adsorption part (220). The connecting surface (223) may be perpendicular to the bottom surface of the porous adsorption part (220).

[0089] The inclined surface (221) may slope downward from a starting point to an end point. Here, the starting point of the inclined surface (221) may be positioned at the boundary between the upper surface and the side of the porous adsorption part (220). Additionally, the end point of the inclined surface (221) may be a region of the side located below the starting point of the inclined surface (221). The end point of the inclined surface (221) may be positioned at the boundary between the inclined surface (221) and the connecting surface (223). The end point of the inclined surface (221) may be adjacent to the upper surface of the stage (100) than the starting point.

[0090] The inclined surface (221) may be positioned in alignment with the stage (100). For example, the end point of the inclined surface (221) may be positioned in alignment with the upper surface of the stage (100), as shown in FIGS. 5 and 6. In this case, the connecting surface (223) may be located in an area corresponding to the stepped portion (102). Accordingly, perovskite droplets can be guided to the outer area of ​​the porous adsorption portion (220), and contamination of the outer area of ​​the porous adsorption portion (220) can be minimized.

[0091] Additionally, although not shown in the drawing, the inclined surface (221) may be positioned above the stage (100). For example, the end point of the inclined surface (221) may be located above the upper surface of the stage (100), and the upper surface of the stage (100) may correspond horizontally to the connecting surface (223). Accordingly, perovskite droplets can be guided to the outer region of the porous adsorption part (220), and contamination of the outer region of the porous adsorption part (220) and the upper surface of the stage (100) can be minimized.

[0092] Accordingly, according to the substrate processing apparatus of the embodiment of the present invention, by mounting a porous adsorption unit on a stage, vacuum adsorption force can be applied to the entire bottom surface area of ​​the wafer, and as the vacuum adsorption force is transmitted to the entire bottom surface area of ​​the wafer, the wafer can be fixed more firmly to prevent it from being removed from the stage. Additionally, by mounting the porous adsorption unit so as to protrude above the stage, perovskite droplets can be absorbed from being exposed to the outside of the wafer, and the bottom surface of the next wafer to be supplied continuously can be prevented from being contaminated.

[0093] Although specific embodiments have been illustrated and described above to exemplify the technical concept of the present invention, the present invention is not limited to the configuration and operation identical to the specific embodiments described above, and various modifications may be implemented within the scope of the present invention. Accordingly, such modifications should also be considered to fall within the scope of the present invention, and the scope of the present invention should be determined by the claims set forth below. Explanation of the symbols

[0094] 1: Substrate processing device 100: Stage 110: Bed 120: Porous adsorption part 400: Head section

Claims

Claim 1 A substrate processing apparatus comprising: a stage positioned to be movable on a bed; and a porous adsorption member mounted on the upper part of the stage to correspond to an area on which a wafer is placed; wherein, when a vacuum adsorption force is applied to the stage, the bottom surface of the wafer is vacuum adsorbed by the vacuum adsorption force transmitted to the upper surface of the porous adsorption member, and the porous adsorption member is formed at a set height at least higher than the upper surface of the stage and includes an inclined surface inclined downwardly toward the stage from an outer lower region of the wafer, and the inclined surface is located between the upper surface and the bottom surface of the porous adsorption member. Claim 2 A substrate processing apparatus according to claim 1, wherein the stage comprises a vacuum channel formed concavely from the upper surface to form a vacuum adsorption force inside, and a step portion that supports the porous adsorption portion to maintain a set gap inside the vacuum channel. Claim 3 A substrate processing apparatus according to claim 2, wherein the set gap between the stage and the porous adsorption part is formed in the range of 0.3 to 1.2 mm. Claim 4 A substrate processing apparatus according to claim 1, wherein the height of the porous adsorption portion protruding upward from the upper surface of the stage is formed to be in the range of 0.3 to 1 mm. Claim 5 A substrate processing device according to claim 1, wherein the porous adsorption portion absorbs at least a portion of the perovskite material sprayed onto the upper surface of a wafer during a coating process through an outer region exposed on the side due to the set height. Claim 6 A substrate processing device according to claim 1, wherein the porous adsorption portion is formed to be at least the same size as the wafer or smaller. Claim 7 A substrate processing device according to claim 1, wherein the inclined surface is located between the upper surface and the connecting surface of the porous adsorption part, and the connecting surface is located between the inclined surface and the lower surface of the porous adsorption part. Claim 8 A substrate processing apparatus according to claim 1, wherein the inclined surface is formed at an angle range of 45 to 90° with respect to the bottom surface of the stage. Claim 9 A substrate processing device according to claim 1, wherein the porous adsorption part is made of a ceramic material and has a pore size in the range of 1 to 3 μm. Claim 10 A substrate processing device according to claim 1, wherein the porous adsorption portion is formed with a porosity in the range of 30 to 50%.

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