Apparatus and method for treating substrate

Abstract

The present invention provides a substrate processing apparatus and a substrate processing method for reducing electrostatic charge of a power electrode. In one embodiment, the invention provides a substrate processing apparatus comprising: a process chamber comprising an upper chamber and a lower chamber including a processing space for processing a substrate; a substrate support member provided inside the processing space and fixing the substrate; a gas supply member for supplying process gas to the interior of the upper chamber and the processing space; a plasma generation member including an upper electrode provided in the upper chamber and a high-frequency power source connected to the upper electrode and providing high-frequency power through an impedance matching device; and a filter member connected to the upper electrode and removing charge accumulated on one surface of the upper electrode.

Description

Technology Field

[0001] The present invention relates to a substrate processing apparatus and method for reducing electrostatic charge of a power electrode. Background Technology

[0002] Generally, to manufacture semiconductor devices, a desired pattern is formed on a substrate by performing various processes such as etching, ashing, ion implantation, thin film deposition, and cleaning. Here, the etching process is a process for removing selected heated regions among the films formed on the substrate, and wet etching and dry etching are used.

[0003] In dry processes, chemical treatment by radicals and physical treatment by ions can be performed. To perform chemical and physical treatments independently, a double chamber structure has been proposed that is divided into upper and lower sections by an ion blocker and a showerhead, which allow electrically neutral substances such as radicals and gases to pass through but do not allow ions to pass through.

[0004] Meanwhile, electrostatic charging may occur at the upper power electrode as charge accumulates due to coolant circulation. As a method to remove the accumulated charge, a technology has been disclosed that can remove the charge by directly generating ions. However, this raises concerns about arcing as the output of the ionizer is exposed in the propagation path, and the movement of the generated ions may affect the electric field distribution for plasma generation.

[0005] In addition, other disclosed conventional technologies can remove accumulated charge by indirectly changing the surrounding electric field, but this has the limitation that it requires a separate electrode and can be used only when the high-frequency electric field is turned off, as it may cause arc discharge or affect the electric field distribution.

[0007] (Patent Document) US 9704714 B2 The problem to be solved

[0009] The present invention aims to solve the above problems and provides a substrate processing apparatus and a substrate processing method for reducing electrostatic charge of a power electrode. means of solving the problem

[0010] To achieve the above objectives, the present invention provides the following substrate processing apparatus and substrate processing method.

[0011] In one embodiment, the present invention provides a substrate processing apparatus comprising: a process chamber comprising an upper chamber and a lower chamber comprising a processing space for processing a substrate; a substrate support member provided inside the processing space and fixing a substrate; a gas supply member for supplying process gas to the interior of the upper chamber and the processing space; a plasma generation member including an upper electrode provided in the upper chamber and a high-frequency power source connected to the upper electrode and providing high-frequency power through an impedance matching device; and a filter member connected to the upper electrode and removing a charge accumulated on one surface of the upper electrode.

[0012] In one embodiment, the filter unit includes a filter circuit connected between the upper electrode and ground, and the filter circuit may include a low pass filter.

[0013] In one embodiment, the apparatus further includes a gas feeding unit installed on one surface of the upper electrode, which receives the process gas from the gas supply unit and transmits it into the interior of the process chamber through the upper electrode, and the filter unit may be inserted inside the gas feeding unit.

[0014] In one embodiment, the gas feeding unit may include a feeding block installed on one surface of the upper electrode, a supply conduit provided inside the feeding block, with one end formed to communicate with the gas supply unit and the other end formed to communicate with the upper electrode, and a wire inserted inside the feeding block, with one end grounded and the other end electrically connected to the upper electrode.

[0015] In one embodiment, the filter unit is inserted inside the feeding block and includes a filter circuit connected between the wire and the ground, and the filter circuit may include a low pass filter.

[0016] In one embodiment, the feeding block may have a coupling groove formed on one surface into which a fastening member can be inserted so as to be coupled with the gas supply part.

[0017] In one embodiment, the wire may be provided to be connected to the coupling groove such that one end contacts the fastening member.

[0018] In one embodiment, the wire is provided at one end of the coupling groove side and may further include a contact assist member for contacting the fastening member.

[0019] In one embodiment, the gas feeding portion may further include a sealing member inserted to prevent leakage of the process gas on at least one of the surface where the gas supply portion and the supply pipe come into contact or the surface where the supply pipe and the upper electrode come into contact.

[0020] In one embodiment, the present invention provides a substrate processing apparatus comprising a first space disposed between an upper electrode and an ion blocker, a second space disposed between the ion blocker and a shower head, and a processing space for processing a substrate below the shower head, wherein the apparatus comprises: a mounting step of mounting a substrate on a substrate support provided in the processing space; a gas supply step in which a first gas supply module supplies a first process gas to the first space through the upper electrode; a plasma generation step in which a plasma generator supplies power to the upper electrode through a high-frequency power source to excite the first process gas into plasma; a filter step in which a filter connected to the upper electrode blocks the high frequency provided from the high-frequency power source and passes a charge accumulated on one surface of the upper electrode; and a substrate processing step in which a plasma effluent is provided in the processing space and a second gas supply module supplies a second process gas to the processing space through the shower head to process the substrate. Effects of the invention

[0021] The present invention can provide a substrate processing apparatus and a substrate processing method for reducing electrostatic charge of a power electrode. Brief explanation of the drawing

[0022] FIG. 1 is a conceptual diagram of a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a conceptual diagram of a filter section according to an embodiment of the present invention. FIG. 3 is a conceptual diagram of a substrate processing apparatus according to another embodiment of the present invention. FIG. 4 is a schematic perspective view of a gas feeding section according to an embodiment of the present invention. Figure 5 is a cross-sectional view of AA' of Figure 4. Figure 6 is a cross-sectional view of BB' of Figure 4. Figure 7 is a cross-sectional view of CC' of Figure 4. FIG. 8 is a flowchart of a substrate processing method according to an embodiment of the present invention. Specific details for implementing the invention

[0023] Hereinafter, preferred embodiments are described in detail with reference to the attached drawings so that those skilled in the art can easily practice the present invention. However, in describing the preferred embodiments of the present invention in detail, if it is determined that a detailed description of related known functions or configurations may unnecessarily obscure the essence of the present invention, such detailed description is omitted. In addition, the same reference numerals are used throughout the drawings for parts having similar functions and operations. Furthermore, in this specification, terms such as 'top', 'upper part', 'upper surface', 'lower', 'lower part', 'lower surface', 'side surface', etc., are based on the drawings, and in reality, they may vary depending on the direction in which the elements or components are arranged.

[0024] Additionally, throughout the specification, when a part is described as being 'connected' to another part, this includes not only cases where they are 'directly connected,' but also cases where they are 'indirectly connected' with other elements in between. Furthermore, the description of a component as 'including' means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.

[0026] FIG. 1 is a conceptual diagram for explaining a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is a diagram showing the configuration of a filter unit according to an embodiment of the present invention.

[0027] Referring to FIG. 1, a substrate processing device (1) according to an embodiment of the present invention includes a process chamber (100), a substrate support (200), a gas supply unit (300), and a plasma generation unit (400). The process chamber (100) is composed of an upper chamber (110) equipped with an upper electrode (420) and a lower chamber (120) including a processing space (101) in which a substrate (W) is processed. At this time, the process chamber (100) may have a circular tube shape. The process chamber (100) is provided with a metal material, for example, aluminum. An opening (130) is formed in one side wall of the process chamber (100), and the opening (130) may be used as an entrance / exit port through which the substrate (W) can be taken in and out. An exhaust port (not shown) is installed on the bottom surface of the process chamber (100), and the exhaust port (not shown) functions as an outlet (150) through which by-products generated in the processing space (101) are discharged to the outside of the process chamber (100). At this time, the exhaust operation is performed by a pump.

[0028] A substrate support member (200) is installed within the processing space (101) and supports a substrate (W). The substrate support member (200) may be an electrostatic chuck that supports the substrate (W) using electrostatic force, and the electrostatic chuck may include a dielectric plate on which the substrate (W) is placed on an upper surface, an electrode installed within the dielectric plate that provides electrostatic force to adsorb the substrate (W), and a heater installed within the dielectric plate that heats the substrate (W).

[0029] The gas supply unit (300) supplies process gas to the interior of the process chamber (100), and the gas supply unit (300) may include a first gas supply module (310) and a second gas supply module (320). The first gas supply module (310) provides a first process gas to the upper chamber (110), and the first process gas may be a fluorine-containing gas, for example, nitrogen trifluoride ( ) It may be a gas. The second gas supply module (320) provides a second process gas into the processing space (101), and the second process gas may be a nitrogen and hydrogen-containing gas, for example, ammonia ( ) It may be a gas. Accordingly, nitrogen trifluoride ( ) is excited in the form of plasma, and plasma effluent and ammonia( ) can react to form an etchant for etching the substrate (W). Meanwhile, the first gas supply module (310) may further provide a third process gas, and the third process gas may be an inert gas, such as Ar or Ne. The third process gas may be provided together with the first process gas and may help move the first process gas.

[0030] The plasma generation unit (400) includes a high-frequency power source (410), an upper electrode (420), an ion blocker (430), and a shower head (440), and serves as a capacitively coupled plasma source. The upper electrode (420) is provided in the upper chamber (11), and the high-frequency power source (410) is connected to the upper electrode (420) and provides high-frequency power through an impedance matching unit (411). The shower head (440) can partition the upper chamber (110) and the lower chamber (120), and the ion blocker (430) is provided in the upper chamber (110) but can be provided between the upper electrode (420) and the shower head (440). At this time, a first space (401) is disposed between the upper electrode (410) and the ion blocker (430), a second space (402) is disposed between the ion blocker (430) and the shower head (440), and a processing space (101) may be located below the shower head (440). That is, the upper chamber (110) may provide the first space (410) and the second space (402), and the lower chamber (120) may provide the processing space (101).

[0031] A substrate processing device (1) according to an embodiment of the present invention may have a first gas supply module (310) connected to an upper electrode (420) to supply a first process gas and / or a third process gas to a first space (401) through the upper electrode (420). More specifically, the first process gas supplied through the first gas supply module (310) is provided to the first space (401) through a first gas supply hole (421) formed in the upper electrode (420). Furthermore, a substrate processing device (1) according to an embodiment of the present invention supplies the high-frequency power supply (410) to the upper electrode (420) to excite the first process gas provided to the first space (401) in the form of plasma. The first process gas excited in a plasma state includes radicals, ions, and / or electrons.

[0032] The plasma formed in the first space (401) can be filtered by passing through the ion blocker (430). That is, the ion blocker (430) can be connected to a constant voltage, and radicals or uncharged neutral species among the plasma effluent can be supplied to the second space (402) through a first through-hole (431) formed vertically in the ion blocker (430), whereas charged species (i.e., ions) cannot pass through the first through-hole (431) and can be filtered. Accordingly, the filtered plasma effluent can be supplied to the second space (402) by passing through the ion blocker (430) through the first through-hole (431).

[0033] At this time, the shower head (440) may be provided to be connected to the second gas supply module (320), and the plasma effluent provided to the second space (402) may pass through the shower head (440) and be provided to the processing space (101). That is, the shower head (440) may further include a second gas supply hole (441) formed to receive the second process gas from the second gas supply module (320) and provide it to the processing space (101), and a second through hole (442) formed to communicate with the second space (402) to provide the plasma effluent provided to the second space (402) to the processing space (101). Accordingly, the plasma effluent provided to the second space (402) is provided to the processing space (101) through the second through hole (442), and the plasma effluent can be reacted and mixed with the second process gas supplied through the second gas supply hole (441) to process the substrate, and, for example, can form an etchant for etching silicon oxide.

[0034] At this time, the upper electrode (420) may be charged with static electricity by power supply from the high-frequency power source (410), and a phenomenon in which charge is accumulated may occur as a coolant (not shown) circulates inside the upper electrode (420). The charge accumulated in the upper electrode (420) may cause micro-arcing during the plasma generation process.

[0035] To solve the above problem, a substrate processing device (1) according to one embodiment of the present invention further includes a filter unit (500). The filter unit (500) is connected to the upper electrode (420) and can remove the charge accumulated on one surface of the upper electrode (420) according to the power supply of the high-frequency power source (410).

[0036] For example, a filter unit (500) according to one embodiment of the present invention may include a separate discharge control circuit (not shown), and a discharge control circuit (not shown) that is a passive or active circuit may move the charge to cause the charge to be consumed in a resistor (not shown). By doing so, the filter unit (500) can remove the charge accumulated on one side of the upper electrode (420). In another embodiment, the filter unit (500) may detect the type of charge accumulated on one side of the upper electrode (420) through a charge detector (not shown) and generate positive or negative ions through an ion generator (not shown) and send them to one side of the upper electrode (420) to remove the accumulated charge. The filter unit (500) may be applied without limitation as long as it can remove the charge accumulated on one side of the upper electrode (420).

[0037] More specifically, a filter unit (500) according to an embodiment of the present invention includes a filter circuit (510) connected between the upper electrode (420) and ground, and the filter circuit (510) may include a low pass filter. Referring to FIG. 2, since one end of the filter circuit (510) is grounded and the other end is connected to one side of the upper electrode (420), the charge accumulated on one side of the upper electrode (420) can be moved to ground and removed, and at the same time, the high frequency generated from the high frequency power source (410) cannot pass through the filter circuit (510), thereby preventing the high frequency from being lost to ground. Accordingly, the substrate processing device (1) according to an embodiment of the present invention can prevent charge from being accumulated on the upper electrode (420) even during plasma generation, and at the same time prevent the high frequency from being short-circuited.

[0039] FIG. 3 illustrates a substrate processing device (1) according to another embodiment of the present invention, and FIGS. 4 to 7 illustrate a gas feeding section (600) included in the substrate processing device (1) according to another embodiment of the present invention. More specifically, FIG. 4 is a schematic perspective view of a gas feeding section (600) according to one embodiment of the present invention, FIG. 5 is a cross-sectional view AA' of FIG. 4, FIG. 6 is a cross-sectional view BB' of FIG. 4, and FIG. 7 is a cross-sectional view CC' of FIG. 4. Hereinafter, with reference to FIGS. 3 to 7, a substrate processing device (1) according to another embodiment of the present invention will be described. Descriptions of parts that overlap with the substrate processing device (1) according to one embodiment of the present invention described above will be omitted, and descriptions will be based on the differences.

[0040] A substrate processing device (1) according to another embodiment of the present invention may further include a gas feeding unit (600). The gas feeding unit (600) is connected to the upper electrode (420) and can receive process gas from the gas supply unit (300) and deliver it into the interior of the process chamber (100). At this time, the filter unit (500) may be inserted into the gas feeding unit (600). Meanwhile, the gas feeding unit (600) may be installed on one side of the upper electrode.

[0041] The gas feeding section (600) may include a feeding block (610), a supply conduit (620), and a wire (630). The feeding block (610) may be installed on one side of the upper electrode (420), may have a square column shape, and may be composed of a resin-based material. The supply conduit (620) is provided inside the feeding block, and one end may be formed to communicate with the gas supply section (300), and the other end may be formed to communicate with the upper electrode (420), thereby allowing the process gas supplied from the gas supply section (300) to be provided to the first space (401) through the upper electrode (420). The wire (630) may be composed of a conductive material, inserted inside the feeding block (610), with one end grounded and the other end electrically connected to the upper electrode (420). At this time, the filter unit (500) is inserted into the feeding block (610) and further includes a filter circuit (510) connected between the wire (630) and the ground, and the filter circuit (510) may include a low-pass filter. Accordingly, the charge accumulated on the upper electrode (420) can be removed by moving to the ground along the wire (630), while the high frequency is blocked by the filter circuit (510), so the substrate processing device (1) can remove the charge of the upper electrode and at the same time prevent loss due to the grounding of the high frequency.

[0042] Meanwhile, the gas feeding section (600) can be connected to the first gas supply module (310) and can receive a first process gas from the first gas supply module (310) and supply it to the first space (401) through the upper electrode (420). That is, one end of the supply conduit (620) can be connected to the first supply line (311) of the first gas supply module (310), and the other end can be connected to the upper electrode (420). At this time, the supply conduit (620) may have an L-shape. Accordingly, the first process gas can be supplied from the first gas supply module (310) through the gas feeding section (600) to the upper electrode (420). At this time, the first supply line (311) can be coupled with the feeding block (610) by a fastening member (not shown) penetrating through it, and the feeding block (610) may have a coupling groove (611) formed on one side into which the fastening member (not shown) can be inserted so that the first supply line (311) can be coupled. Accordingly, the first gas supply module (310) can be coupled with the feeding block (610) by inserting the fastening member (not shown) penetrating through the coupling groove (611).

[0043] Furthermore, the gas feeding section (600) may further include a sealing member (640) inserted to prevent leakage of process gas at least on the surface where the first supply line (311) and the supply conduit (620) meet, or on the surface where the supply conduit (620) and the upper electrode (420) meet. The sealing member (640) may be provided to surround the outer side of the supply conduit (620) and may be located on the inner side rather than the coupling groove (611). To this end, the feeding block (610) may have a groove formed around the end side of the supply conduit (620) so that the sealing member (640) is inserted, and the sealing member (640) is inserted into the groove to prevent leakage of the first process gas during transport.

[0044] The wire (630) may be provided to be connected to the coupling groove (611) such that one end contacts the fastening member (not shown). Accordingly, one end of the wire (630) can be grounded by contacting the fastening member (not shown), and the other end is electrically connected to the upper electrode (420), thereby removing the charge accumulated on one side of the upper electrode (420). Furthermore, the wire (630) may be provided at one end on the side of the coupling groove (611) and may further include a contact assist part (not shown) for contact with the fastening member (not shown). For example, although not shown in the drawing, the contact assist part (not shown) may refer to a part of the wire (630) that has a spring shape, or may refer to a cushion (not shown) for contact between the fastening member (not shown) and the one end of the wire (630). However, any configuration that facilitates contact between the wire (630) and the fastening member (not shown) may be applied without limitation. Accordingly, the substrate processing device (1) according to another embodiment of the present invention can facilitate the wire (630) being grounded.

[0045] According to the structure described above, a substrate processing device (1) according to another embodiment of the present invention inserts a low-pass filter (LPF) into a gas feeding section (600) so that the charge accumulated on the upper electrode (420) moves to ground along the wire (630), and the low-pass filter (LPF) can act as an RF choke to prevent the high frequency supplied from the high frequency power source (410) from being lost to ground. In addition, the substrate processing device (1) continuously prevents the accumulation of charge and does not require the separate installation or replacement of the filter circuit (510) by inserting the filter circuit (510) as an integral part inside the gas feeding section (600) without the need for separate installation or replacement of the filter section (500).

[0046] Meanwhile, although the substrate processing device (1) according to one embodiment of the present invention has been described as having a structure using a capacitively coupled plasma (CCP) source configured with a double chamber, it is not limited thereto, and if the filter unit (500) can remove the charge accumulated on one surface of the electrode that supplies power, it can also be applied to a structure using an inductively coupled plasma (ICP) source.

[0048] FIG. 8 is a flowchart of a substrate processing method according to an embodiment of the present invention.

[0049] A substrate processing method according to an embodiment of the present invention comprises a mounting step (S100), a gas supply step (S200), a plasma generation step (S300), a filter step (S400), and a substrate processing step (S500). The configuration of the substrate processing device (1) described in FIG. 1 and FIG. 3 may be applied. For example, as shown in FIG. 3, the method may be described by a substrate processing device comprising a first space (401) disposed between an upper electrode (420) and an ion blocker (430), a second space (402) disposed between the ion blocker (430) and a shower head (440), and a processing space (101) for processing a substrate (W) below the shower head (440). Hereinafter, a substrate processing method according to an embodiment of the present invention will be described in detail with reference to FIG. 1, FIG. 3 and FIG. 8.

[0050] First, the above-mentioned mounting step (S100) may mount a substrate (W) on a substrate support (200) provided in the processing space (101). The above-mentioned gas supply step (S200) may allow a first gas supply module (310) to supply a first process gas to the first space (401) through an upper electrode (420). Here, the first process gas may be a fluorine-containing gas, for example, nitrogen trifluoride ( ) It may be a gas. More specifically, the gas supply step (S200) includes the step of the first gas supply module (310) delivering the first process gas to a gas feeding part (600) provided on one side of the upper electrode (420), and the step of the gas feeding part (600) providing the first process gas to the first space (401) through a first gas supply hole (421) formed in the upper electrode (420). That is, the first gas supply module (310) can supply the first process gas to the first space (401) through the gas feeding part (600).

[0051] The above plasma generation step (S300) can excite the first process gas into plasma by the plasma generation unit (400) supplying power to the upper electrode (420) through a high-frequency power source (410). For example, nitrogen trifluoride, which is the first process gas, within the first space (401). ) can be excited in the form of plasma. Meanwhile, in the plasma generation step (S300), the upper electrode (420) may have charge accumulated on one surface, and an arcing phenomenon may occur during plasma generation due to the accumulated charge.

[0052] In the filter step (S400), the filter unit (500) connected to the upper electrode (420) can block the high frequency provided from the high frequency power source (410) and allow the charge accumulated on one surface of the upper electrode (420) to pass through. At this time, the filter step (S400) can be performed simultaneously with the plasma generation step (S300), and if the filter circuit (510) described later is connected, it can be performed continuously from before the start of the plasma generation step (S300). Accordingly, the substrate processing method according to an embodiment of the present invention can prevent micro-arcing by preventing charge from accumulating on the surface of the upper electrode (420), and the plasma generation step (S300) can be performed continuously without a high frequency short circuit.

[0053] At this time, the filter unit (500) is provided inside the gas feeding unit (600) and may include a filter circuit (510) connected between the upper electrode (420) and ground, and the filter circuit (510) may include a low pass filter. Accordingly, the substrate processing method according to one embodiment of the present invention can remove the charge accumulated on one surface of the upper electrode (420) by the filter circuit (510) and at the same time block high frequency to prevent loss due to grounding of high frequency.

[0054] In the above substrate processing step (S500), the effluent of plasma generated in the first space (401) is provided to the processing space (101), and the second gas supply module (320) supplies a second process gas to the processing space (101) through the shower head (440) to process the substrate (W). Here, the second process gas may be a nitrogen and hydrogen-containing gas, for example, ammonia ( It can be ) gas. Plasma effluent and ammonia( ) can react to form an etchant for etching the substrate (W).

[0055] Accordingly, the substrate processing method according to one embodiment of the present invention can prevent arcing by removing the charge accumulated on one surface of the upper electrode as the filter step (S400) is performed, and the plasma generation step (S300) can be performed without a high-frequency short circuit as the high frequency is blocked by the filter circuit.

[0057] Although the present invention has been described above with reference to embodiments, the present invention is not limited to the embodiments described above, and it is understood that it can be modified and implemented by those skilled in the art without changing the technical concept of the present invention as claimed in the claims. Explanation of the symbols

[0059] 1: Substrate processing device 100: Process chamber 101: Processing space 110: Upper chamber 120: Lower chamber 130: Opening 200: Substrate support 300: Gas supply 310: 1st gas supply module 311: 1st supply line 320: Second gas supply module 400: Plasma generator 401: First Space 402: Second Space 410: High-frequency power supply 411: Matching unit 420: Upper electrode 421: First gas supply hole 430: Ion blocker 431: First through hole 440: Shower head 441: Second gas supply hole 442: Second through hole 500: Filter section 510: Filter circuit 600: Gas feeding section 610: Feeding block 611: Connecting groove 620: Supply pipeline 630: Wire 640: Sealing member

Claims

Claim 1 A substrate processing apparatus comprising: a process chamber comprising an upper chamber and a lower chamber including a processing space for processing a substrate; a substrate support member provided inside the processing space and fixing the substrate; a gas supply member supplying process gas to the interior of the upper chamber and the processing space; a plasma generation member including an upper electrode provided in the upper chamber and a high-frequency power source connected to the upper electrode and providing high-frequency power through an impedance matching device; and a filter member connected to the upper electrode and removing a charge accumulated on one surface of the upper electrode. Claim 2 In claim 1, the filter unit includes a filter circuit connected between the upper electrode and ground, and the filter circuit includes a low pass filter. Claim 3 In claim 1, the gas feeding unit is further included, which is installed on one surface of the upper electrode and receives the process gas from the gas supply unit and transmits it into the interior of the process chamber through the upper electrode; and the filter unit is a substrate processing device inserted inside the gas feeding unit. Claim 4 In claim 3, the gas feeding unit comprises: a feeding block installed on one surface of the upper electrode; a supply conduit provided inside the feeding block, with one end formed to communicate with the gas supply unit and the other end formed to communicate with the upper electrode; and a wire inserted inside the feeding block, with one end grounded and the other end electrically connected to the upper electrode. Claim 5 In claim 4, the filter unit comprises a filter circuit inserted inside the feeding block and connected between the wire and the ground; and the filter circuit comprises a low pass filter. Claim 6 In claim 5, the feeding block is a substrate processing device having a coupling groove formed on one surface into which a fastening member can be inserted so as to be coupled with the gas supply part. Claim 7 In claim 6, the above wire is a substrate processing device configured to be connected to the coupling groove so that one end contacts the fastening member. Claim 8 A substrate processing apparatus according to claim 7, further comprising: a contact assist portion for contacting the fastening member, wherein the wire is provided at one end of the coupling groove side. Claim 9 A substrate processing apparatus according to claim 8, wherein the gas feeding part further comprises a sealing member inserted to prevent leakage of the process gas on at least one of the surface where the gas supply part and the supply pipe come into contact or the surface where the supply pipe and the upper electrode come into contact. Claim 10 In claim 9, the plasma generating unit further comprises: a shower head partitioning the upper chamber and the lower chamber; and an ion blocker provided in the upper chamber, positioned between the upper electrode and the shower head; wherein a first space is disposed between the upper electrode and the ion blocker, a second space is disposed between the ion blocker and the shower head, and a processing space is located below the shower head. Claim 11 A substrate processing apparatus according to claim 10, wherein the gas supply unit comprises: a first gas supply module connected to the gas feeding unit and providing a first process gas to the first space; and a second gas supply module connected to the shower head and providing a second process gas to the processing space. Claim 12 In claim 11, the upper electrode has a first gas supply hole formed to communicate with the supply conduit of the feeding block, and the first process gas is supplied to the first space through the supply conduit and the first gas supply hole, forming a substrate processing device. Claim 13 A substrate processing apparatus according to claim 12, wherein the shower head further comprises: a second gas supply hole formed to receive the second process gas from the second gas supply module and provide it to the processing space; and a second through hole formed to communicate with the second space to provide the plasma effluent provided to the second space to the processing space. Claim 14 In claim 13, the ion blocker is connected to a static voltage and is a substrate processing device having a first through hole formed to filter plasma formed in the first space and provide plasma effluent to the second space. Claim 15 A substrate processing apparatus according to claim 14, wherein the first process gas is a fluorine-containing gas and the second process gas is a nitrogen and hydrogen-containing gas. Claim 16 In claim 15, the first gas supply module can further provide a third process gas through the gas feeding section and the upper electrode, and the third process gas is an inert gas, in a substrate processing device. Claim 17 A substrate processing apparatus comprising a first space disposed between an upper electrode and an ion blocker, a second space disposed between the ion blocker and a shower head, and a processing space for processing a substrate below the shower head, the method comprising: a mounting step of mounting a substrate on a substrate support provided in the processing space; a gas supply step in which a first gas supply module supplies a first process gas to the first space through the upper electrode; a plasma generation step in which a plasma generator supplies power to the upper electrode through a high-frequency power source to excite the first process gas into plasma; a filter step in which a filter connected to the upper electrode blocks the high frequency provided from the high-frequency power source and passes a charge accumulated on one surface of the upper electrode; and a substrate processing step in which a plasma effluent is provided to the processing space, and a second gas supply module supplies a second process gas to the processing space through the shower head to process the substrate. Claim 18 In claim 17, the gas supply step comprises: a step in which the first gas supply module delivers a first process gas to a gas feeding portion provided on one surface of the upper electrode; and a step in which the gas feeding portion provides the first process gas to the first space through a first gas supply hole formed in the upper electrode; a substrate processing method. Claim 19 In claim 18, the filter section is provided inside the gas feeding section and is a filter circuit connected between the upper electrode and ground, and the filter circuit includes a low pass filter. Claim 20 A process chamber comprising a first space disposed between an upper electrode and an ion blocker, a second space disposed between the ion blocker and a shower head, and a processing space for processing a substrate below the shower head; a substrate support member provided inside the processing space and equipped with an electrostatic chuck for fixing the substrate; a gas supply unit comprising a first gas supply module for supplying a first process gas to the first space and a second gas supply module for supplying a second process gas to the processing space; a plasma generator connected to the upper electrode and equipped with a high-frequency power source that provides high-frequency power through an impedance matching device; and a gas feeding unit installed on one surface of the upper electrode, connected to the first gas supply module, and receiving the first process gas from the first gas supply module and delivering it into the interior of the first space. A substrate processing apparatus comprising: a filter unit provided inside the gas feeding unit, which blocks high frequency provided from the plasma generating unit and passes charge accumulated on one surface of the upper electrode; wherein the gas feeding unit comprises: a feeding block provided to be in contact with the upper surface of the upper electrode; a supply conduit provided inside the feeding block, having one end formed to be in communication with the gas supply unit and the other end formed to be in communication with the upper electrode; and a wire inserted inside the feeding block, having one end grounded and the other end electrically connected to the upper electrode; wherein the filter unit comprises a filter circuit electrically connected to the wire, and the filter circuit comprises a low-pass filter.

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