Edge ring and substrate processing apparatus

Abstract

An edge ring and a substrate processing apparatus capable of reducing the frequency of replacement of the edge ring and suppressing leakage of heat transfer gas and the generation of particles. The edge ring is an edge ring disposed around a substrate to be processed, and comprises an annular first member formed of a first material and having a first inclined portion on the lower side of the inner circumference, and an annular second member formed of a second material different from the first material and having a second inclined portion opposite to the first inclined portion and provided at the lower side of the first member.

Description

Technology Field

[0001] The present disclosure relates to an edge ring and a substrate processing apparatus. Background Technology

[0002] In plasma treatment of a substrate, an edge ring may be placed along the outer periphery of the substrate positioned within a chamber with a predetermined vacuum level. By placing the edge ring, plasma treatment can be performed uniformly within the plane of the substrate.

[0003] In addition, plasma treatment of the substrate is performed while the substrate and edge ring, placed on the electrostatic chuck, are adsorbed to the electrostatic chuck by electrostatic adsorption force. Furthermore, to improve heat transfer between the substrate and the electrostatic chuck, and between the edge ring and the electrostatic chuck, a heat transfer gas such as He gas is supplied between the electrostatic chuck and the substrate, and between the electrostatic chuck and the edge ring. Prior art literature

[0004] Japanese Patent Publication No. 2010-251723 The problem to be solved

[0005] The present disclosure provides an edge ring and substrate processing apparatus capable of reducing the frequency of edge ring replacement and also suppressing leakage of heat transfer gas and the generation of particles. means of solving the problem

[0006] An edge ring according to one aspect of the present disclosure is an edge ring disposed around a substrate to be processed, comprising: an annular first member formed of a first material and having a first inclined portion on the lower side of the inner circumference; and an annular second member formed of a second material different from the first material and having a second inclined portion opposite to the first inclined portion and provided at the lower side of the first member. Effects of the invention

[0007] According to the present disclosure, the frequency of replacing the edge ring can be reduced, and the leakage of heat transfer gas and the generation of particles can also be suppressed. Brief explanation of the drawing

[0008] FIG. 1 is a figure showing an example of a substrate processing apparatus in one embodiment of the present disclosure. FIG. 2 is a figure showing an example of the configuration of the edge ring in the present embodiment. FIG. 3 is a figure showing an example of the gap on the inner side between the first member and the second member in the experimental example and the comparative example. Figure 4 is a figure showing an example of experimental results in an experimental example and a comparative example. Figure 5 is a figure showing an example of a comparative example regarding processing precision. Specific details for implementing the invention

[0009] Hereinafter, embodiments of the disclosed edge ring and substrate processing apparatus will be described in detail based on the drawings. Furthermore, the disclosed technology is not limited by the following embodiments.

[0010] Edge rings are worn out during plasma processing; however, edge rings formed from silicon carbide (SiC) (hereinafter also referred to as "SiC edge rings") can reduce the frequency of edge ring replacement due to their high plasma resistance. Nevertheless, because SiC edge rings have high rigidity, the adsorption force by the electrostatic chuck is reduced, leading to an increase in heat transfer gas leakage. In response to this, it is considered to improve adsorption force by enhancing the tracking ability of the electrostatic chuck by attaching a material with lower rigidity than SiC, such as silicon (Si), to the electrostatic chuck side of the edge ring. However, a gap is formed at the boundary where SiC and Si are attached, causing reaction products to adhere to this gap. As the plasma processing time elapses, these reaction products in the gap accumulate and peel off, resulting in the generation of particles. Therefore, it is expected that the frequency of edge ring replacement will be reduced, and heat transfer gas leakage and particle generation will be suppressed.

[0011] [Configuration of the substrate processing device (100)]

[0012] FIG. 1 is a diagram showing an example of a substrate processing apparatus according to one embodiment of the present disclosure. The substrate processing apparatus (100) shown in FIG. 1 is a capacitively coupled plasma processing apparatus. The substrate processing apparatus (100) has a chamber (10), which is a processing vessel made of metal, such as aluminum or stainless steel. The chamber (10) is securely grounded.

[0013] A disc-shaped susceptor (11) is horizontally positioned within the chamber (10). The susceptor (11) is positioned on the lower surface of an electrostatic chuck (25) on which an edge ring (ER) is positioned and a semiconductor substrate (hereinafter referred to as a ‘wafer (W)’) as a substrate to be processed. Additionally, the susceptor (11) functions as a lower electrode to which a high-frequency voltage is applied. The susceptor (11) is supported by a tubular support member (13) that extends vertically upward from the bottom of the chamber (10) via an insulating tubular shape maintaining member (12), which is made of, for example, aluminum.

[0014] An exhaust passage (14) is formed between the side wall of the chamber (10) and the tubular support (13), and an annular baffle plate (15) is arranged at the inlet or in the middle of the exhaust passage (14). Additionally, an exhaust port (16) is provided at the bottom of the chamber (10), and an exhaust device (18) is connected to the exhaust port (16) via an exhaust pipe (17). The exhaust device (18) has a vacuum pump and reduces the pressure of the processing space provided by the chamber (10) to a predetermined vacuum level. Additionally, the exhaust pipe (17) has an APC (Automatic Pressure Control Valve), and the APC automatically controls the pressure inside the chamber (10). Furthermore, a gate valve (20) is mounted on the side wall of the chamber (10) to open and close the wafer (W) intake / exit port (19).

[0015] A high-frequency power supply (21-1, 21-2) is electrically connected to the susceptor (11) via a matching device (22-1, 22-2). The high-frequency power supply (21-1) applies a high-frequency voltage for plasma generation to the susceptor (11). The high-frequency power supply (21-1) applies a high-frequency voltage of 27 to 100 MHz to the susceptor (11), and it is preferable to apply a high-frequency voltage of, for example, 40 MHz to the susceptor (11). Additionally, the high-frequency power supply (21-2) applies a high-frequency voltage for introducing ions into the wafer (W) to the susceptor (11). The high-frequency power supply (21-2) applies a high-frequency voltage of 400 kHz to 40 MHz to the susceptor (11), and it is preferable to apply a high-frequency voltage of, for example, 3 MHz to the susceptor (11). The matching unit (22-1) matches the output impedance of the high-frequency power supply (21-1) with the input impedance of the susceptor (11). The matching unit (22-2) matches the output impedance of the high-frequency power supply (21-2) with the input impedance of the susceptor (11).

[0016] The electrostatic chuck (25) is placed on the upper surface of the susceptor (11) and adsorbs the wafer (W) and edge ring (ER) placed on the electrostatic chuck (25) by electrostatic adsorption force. The electrostatic chuck (25) has a disc-shaped center (25a), an annular outer periphery (25b), and a disc-shaped base (25f) with a diameter larger than that of the center (25a), and the center (25a) protrudes upward relative to the outer periphery (25b). The lower surface of the center (25a) and the outer periphery (25b) and the upper surface of the base (25f) are bonded to form the electrostatic chuck (25). The wafer (W) is placed on the upper surface of the center (25a). An edge ring (ER) that annularly surrounds the center (25a) is placed on the upper surface of the outer periphery (25b). Additionally, the central portion (25a) is formed by interposing an electrode plate (25c) made of a conductive film between a pair of dielectric films. Meanwhile, the outer portion (25b) is formed by interposing an electrode plate (25d, 25e) made of a conductive film between a pair of dielectric films. That is, the electrode plates (25c, 25d, 25e) are provided inside the electrostatic chuck (25). Additionally, the electrode plate (25c) is provided in an area corresponding to the wafer (W) inside the electrostatic chuck (25). The electrode plates (25d, 25e) are provided in an area corresponding to the edge ring (ER) inside the electrostatic chuck (25).

[0017] A DC power source (26) is electrically connected to the electrode plate (25c). A DC power source (28) is electrically connected to the electrode plate (25d). A DC power source (29) is electrically connected to the electrode plate (25e). The electrostatic chuck (25) holds the wafer (W) by the Coulomb force or Johnson-Rabek force generated by the DC voltage applied to the electrode plate (25c) from the DC power source (26). Additionally, the electrostatic chuck (25) holds the edge ring (ER) by the Coulomb force or Johnson-Rabek force generated by the DC voltage applied to the electrode plates (25d, 25e) from the DC power sources (28, 29). That is, when Figure 1 is viewed from a planar perspective, an electrode for electrostatically adsorbing the wafer (W) is provided in the interior of the electrostatic chuck (25) in an area that overlaps at least partially with the wafer (W), and an electrode for electrostatically adsorbing the edge ring (ER) is provided in an area that overlaps at least partially with the edge ring (ER).

[0018] As described above, a wafer (W) is placed on the upper surface of the center (25a) of the electrostatic chuck (25). Additionally, an edge ring (ER) that encircles the center (25a) is placed on the upper surface of the outer periphery (25b) of the electrostatic chuck (25). That is, the edge ring (ER) is placed on the electrostatic chuck (25) to surround the wafer (W). Furthermore, the lower surface of the electrostatic chuck (25) and the upper surface of the susceptor (11) are in contact with each other. Accordingly, the susceptor (11) and the electrostatic chuck (25) are formed as a placement base where the wafer (W) and the edge ring (ER) are placed.

[0019] Inside the susceptor (11), an annular refrigerant chamber (31) extending in the circumferential direction is provided. Refrigerant (e.g., cooling water) at a predetermined temperature is circulated and supplied to the refrigerant chamber (31) from the chiller unit (32) through pipes (33, 34), and the processing temperature of the wafer (W) on the electrostatic chuck (25) is controlled by the temperature of the refrigerant.

[0020] Additionally, a heating gas (e.g., He gas) from a heating gas supply unit (35) is supplied between the upper surface of the electrostatic chuck (25) and the lower surface of the wafer (W), and between the upper surface of the electrostatic chuck (25) and the lower surface of the edge ring (ER), via a gas supply pipe (36) and gas introduction holes (101, 102, 103). The gas supply pipe (36) is positioned to penetrate the susceptor (11) and the base (25f) of the electrostatic chuck (25). Additionally, a gas introduction hole (101, 102) leading to the gas supply pipe (36) is provided in the center (25a) of the electrostatic chuck (25). A gas introduction hole (103) leading to the gas supply pipe (36) is provided in the outer periphery (25b) of the electrostatic chuck (25). In the outer periphery (25b) of the electrostatic chuck (25), two electrode plates, electrode plate (25d) and electrode plate (25e), are arranged with a gas introduction hole (103) interposed between electrode plate (25d) and electrode plate (25e). By the heat transfer between the wafer (W) and the electrostatic chuck (25), and between the edge ring (ER) and the electrostatic chuck (25), the heat transfer between the wafer (W) and the electrostatic chuck (25) is improved by the heat transfer gas supplied from the heat transfer gas supply unit (35) through the gas supply pipe (36) and the gas introduction holes (101, 102, 103).

[0021] A shower head (24) serving as an upper electrode of ground potential is disposed on the ceiling portion of the chamber (10). The shower head (24) has an electrode plate (37) having a plurality of gas vent holes (37a) and an electrode support (38) that supports the electrode plate (37). Additionally, a buffer chamber (39) is provided inside the electrode support (38), and a gas supply pipe (41) from a processing gas supply unit (40) is connected to the gas inlet (38a) of the buffer chamber (39).

[0022] In the substrate processing device (100), for example, when dry etching is performed, the gate valve (20) is first opened, and the wafer (W) is introduced into the chamber (10) and placed on the electrostatic chuck (25). Then, from the processing gas supply unit (40), a mixed gas consisting of, for example, C4F8 gas, O2 gas, and Ar gas at a predetermined flow rate ratio is introduced into the chamber (10) at a predetermined flow rate and flow rate ratio as the processing gas. The pressure inside the chamber (10) is set to a value determined by the exhaust device (18). In addition, a DC voltage is applied to the electrode plate (25c) from the DC power source (26), and a DC voltage is applied to the electrode plates (25d, 25e) from the DC power sources (28, 29), thereby electrostatically adsorbing the wafer (W) and the edge ring (ER) onto the electrostatic chuck (25). Then, a high-frequency voltage is applied to the susceptor (11) from the high-frequency power supply (21-1, 21-2). As a result, the processing gas discharged from the shower head (24) is plasmafied, and the surface of the wafer (W) is etched by radicals and ions generated by this plasma.

[0023] [Composition of Edge Ring (ER)]

[0024] Next, the configuration of the edge ring (ER) will be explained using FIG. 2. FIG. 2 is a diagram showing an example of the configuration of the edge ring in the present embodiment. The edge ring (ER1) shown in FIG. 2 corresponds to the edge ring (ER) of FIG. 1.

[0025] As shown in FIG. 2, the edge ring (ER1) is formed by joining an annular first member (M1) and an annular second member (M2) with an adhesive layer (B2) interposed therebetween. The first member (M1) is formed from a first material having plasma resistance. The second member (M2) is formed from a second material different from the first material, for example, a second material having lower plasma resistance than the first material. Additionally, the second member (M2) may be formed from a second material having lower rigidity than the first material. In this case, the second material forming the second member (M2) may be said to have higher flexibility than the first material forming the first member (M1). Examples of the first material forming the first member (M1) include silicon carbide (SiC), tungsten carbide (WC), magnesium oxide (MgO), or yttria (Y2O3). Additionally, examples of the second material forming the second member (M2) include silicon (Si). Furthermore, the first material and the second material are not limited to these materials.

[0026] The first member (M1) is formed to cover the second member (M2) on the outer side and to face the protrusion (P21) of the second member (M2) described later on the inner side. The first member (M1) has an inclined portion (S13) on the lower side of the inner side. The inclined portion (S13) is an example of the first inclined portion. The inclined portion (S13) is a part in which a C-chamfer is performed on the lower corner of the inner side of the first member (M1). Furthermore, the C-chamfer is a chamfer in which the corner is cut at a 45-degree angle, but in this embodiment, it may be any other angle as long as it is an angle that is approximately parallel to the inclined portion (S23) of the second member (M2) described later that faces the inclined portion (S13). In addition, the first member (M1) has a beveled upper portion of the inner side of the side that is larger than the inclined portion (S13), and is shaped to be inclined.

[0027] The second member (M2) is provided at the lower part of the first member (M1), and a protrusion (P21) is provided on the upper part of the inner side. The protrusion (P21) is provided on the wafer (W) side rather than the inner diameter of the first member (M1). The inclined portion (S23) on the outer side of the protrusion (P21) faces the inclined portion (S13) of the first member (M1). The inclined portion (S23) is an example of a second inclined portion. Furthermore, it is preferable that the angle of the inclined portion (S23) be an angle that is approximately parallel to the inclined portion (S13). That is, between the inclined portion (S13) of the first member (M1) and the inclined portion (S23) of the second member (M2), there exists a gap (hereinafter referred to as the inclined gap) in which the upper side of the inclination is open toward the center side of the wafer (W) in the vertical cross-section. The lower surface (S21) of the second member (M2) is in contact with the upper surface of the outer periphery (25b) of the electrostatic chuck (25).

[0028] On the upper surface (S22) of the second member (M2), a concave portion with a depth of, for example, about 40 μm is formed, and the space between it and the lower surface (U1) of the first member (M1) is formed by an adhesive layer (B2). The adhesive layer (B2) includes, for example, a silicone-based adhesive. Additionally, the adhesive layer (B2) may further include a conductive filler. By including a conductive filler in the adhesive layer (B2), the thermal conductivity between the first member (M1) and the second member (M2) is improved. An example of a conductive filler is alumina.

[0029] The outer side of the second member (M2) has its upper side covered by the first member (M1), and its lower side is not covered by the first member (M1) because the lower surface (S11) of the first member (M1) is located above the lower surface (S21) of the second member (M2). Because of this, among the first member (M1) and the second member (M2), only the second member (M2) comes into contact with the upper surface of the outer periphery (25b) of the electrostatic chuck (25). Therefore, when a second material having lower rigidity than the first material is used as the second member (M2), the adhesion of the edge ring (ER1) to the electrostatic chuck (25) can be further improved when the edge ring (ER1) is electrostatically adsorbed to the electrostatic chuck (25).

[0030] In the center (25a) of the electrostatic chuck (25), a seal band (SB11, SB12) having an annular convex shape is provided, and a wafer (W) is supported on the center (25a) by the seal band (SB11, SB12). Accordingly, a space (SP1, SP2) corresponding to the height of the seal band (SB11, SB12) is formed between the upper surface of the center (25a) and the lower surface of the wafer (W). Since the space (SP1, SP2) is connected to a gas introduction hole (102), the heat transfer gas supplied from the heat transfer gas supply unit (35) passes through the gas introduction hole (102) and is introduced into the space (SP1, SP2).

[0031] Additionally, on the outer periphery (25b) of the electrostatic chuck (25), a seal band (SB21, SB22) having an annular convex shape is provided, and an edge ring (ER1) is supported on the outer periphery (25b) by the seal band (SB21, SB22). Accordingly, a space (SP3) corresponding to the height of the seal band (SB21, SB22) is formed between the upper surface of the outer periphery (25b) and the lower surface (S21) of the second member (M2). Since the space (SP3) is connected to the gas introduction hole (103), the heat transfer gas supplied from the heat transfer gas supply unit (35) passes through the gas introduction hole (103) and is introduced into the space (SP3).

[0032] In addition, in the above embodiment, the case where the first member (M1) and the second member (M2) are joined via an adhesive layer (B2) was given as an example, but the first member (M1) and the second member (M2) may be joined by diffusion bonding. In addition, the first member (M1) and the second member (M2) may be formed using a 3D printer.

[0033] [Reaction product in the gap between the first member and the second member]

[0034] Next, the attachment of reaction products in the gap on the inner side between the first member and the second member is explained using FIG. 3. FIG. 3 is a figure showing an example of the gap on the inner side between the first member and the second member in an experimental example and a comparative example. In FIG. 3, the inclined gap in the edge ring (ER1) according to the present embodiment is explained as an experimental example. In addition, Comparative Example 1, in which the gap between the first member and the second member is a gap in the vertical direction, i.e., the longitudinal direction (hereinafter referred to as the longitudinal gap), and Comparative Example 2, in which there is no gap between the first member and the second member (hereinafter referred to as no gap), are explained together.

[0035] First, in the edge ring (ER1) of the experimental example, at the boundary portion on the inner side between the first member (M1) and the second member (M2), there is a gap (D1) between the inner side of the first member (M1) and the uppermost part of the inclined portion (S23) of the second member (M2). Also, the lower surface (U1) in contact with the inclined portion (S13) of the first member (M1) and the upper surface (S22) in contact with the lowermost part of the inclined portion (S23) of the second member (M2) are in contact. Also, the gap (D1) is said to be, for example, 0.4 mm. Also, the end of the wafer (W) is not caught on the inclined portion (S23). At this time, the reaction product is attached to the inclined portion (S13) and the inclined portion (S23), but the reaction product attached to the inclined portion (S23) is sputtered by ions (I) coming from the top. Additionally, when the ion (I) collides with the inclined section (S23), it bounces up and hits the inclined section (S13), causing the reaction product attached to the inclined section (S13) to also be sputtered. That is, the attachment of the reaction product is reduced on the inclined section (S13) and the inclined section (S23).

[0036] Next, in the edge ring (ER2) of Comparative Example 1, the reaction product (DP1) attached to the opposing surfaces (S31, S32) of the longitudinal gap between the first member (M11) and the second member (M12) is difficult to sputter by ions because the surfaces (S31, S32) are approximately parallel to the trajectory of ions coming from above. For this reason, the reaction product (DP1) attached to the surfaces (S31, S32) is deposited and peeled off as the plasma treatment time elapses, thereby generating particles.

[0037] In the edge ring (ER3) of Comparative Example 2, a reaction product (DP2) is attached to the inclined portion (S33) where C chamfering is performed on the lower side of the inner circumference of the first member (M21). Ions coming from the top bounce off the upper surface (S34) of the second member (M22) located between the first member (M21) and the wafer (W), but since the upper surface (S34) is approximately horizontal, fewer ions strike the inclined portion (S33), making it difficult for sputtering by ions to occur. Consequently, the reaction product (DP2) attached to the inclined portion (S33) is deposited and peeled off as the plasma treatment time elapses, thereby generating particles.

[0038] [Experimental Results]

[0039] Next, the results of acceleration experiments performed on the experimental example, comparative example 1, and comparative example 2 shown in FIG. 3 will be explained using FIG. 4. FIG. 4 is a figure showing an example of the experimental results in the experimental example and comparative example. In FIG. 4, conditions 1 to 3 were set as acceleration conditions. Condition 1 was set so that the output of the high-frequency power supply (21-1) for plasma generation was 10,000 W with a duty cycle of 30%, and the output of the high-frequency power supply (21-2) for ion introduction was 3,500 W with a duty cycle of 30%. That is, Condition 1 was set so that the RMS value of the high-frequency power was 4,050 W. Condition 2 was set so that the output of the high-frequency power supply (21-1) for plasma generation was 10,000 W with a duty cycle of 60%, and the output of the high-frequency power supply (21-2) for ion introduction was 3,500 W with a duty cycle of 60%. That is, Condition 2 set the effective value of the high-frequency power to 8100 W.

[0040] Condition 3 is the same as Condition 1 in that the outputs of the high-frequency power supply (21-1) and the high-frequency power supply (21-2) are made the same, and the wafer position is moved 0.5 mm to the upper side (+ side) in FIG. 4 so that the gap on the notch side (lower side in FIG. 4) of the wafer (W) becomes larger. In addition, for Conditions 1 to 3, the plasma treatment time (etching treatment time) is set to 50 hours.

[0041] In the edge ring (ER1) of the experimental example, the number of particles was '22' for condition 1, '33' for condition 2, and '21' for condition 3. In contrast, in the edge ring (ER2) of comparative example 1, the number of particles was '532' for condition 1, '506' for condition 2, and '1853' for condition 3. Also, in the edge ring (ER3) of comparative example 2, the number of particles was '170' for condition 1, '273' for condition 2, and '333' for condition 3. As such, in the edge rings (ER2, ER3) of comparative examples (1, 2), the number of particles increased compared to the edge ring (ER1) of the experimental example under all conditions 1 to 3. Meanwhile, in the edge ring (ER1) of the experimental example, the number of particles hardly changed under conditions 1 to 3, and the number of particles could be suppressed to 40 or fewer. That is, the edge ring (ER1) of the experimental example can suppress the generation of particles even when the output of high-frequency power is changed or when the position of the wafer (W) is off-center.

[0042] [Influence of Slant Gap on Machining Precision]

[0043] Next, the influence of machining precision on the inclined gap is explained using FIG. 5. FIG. 5 is a figure illustrating an example of a comparative example regarding machining precision. In FIG. 5, the case where the inclined gap between the first member (M31) and the second member (M32) is widened is described as Comparative Example 3, and the case where the inclined portion (S37) of the first member (M41) protrudes beyond the uppermost surface of the protrusion of the second member (M42) is described as Comparative Example 4.

[0044] The edge ring (ER4) of Comparative Example 3 is a case where the protrusion (P31) of the second member (M32) is far from the inclined portion (S35) of the first member (M31), that is, a case where the gap (D11) corresponding to the gap (D1) of the edge ring (ER1) is larger than the gap (D1), thereby widening the inclined gap. In addition, in the edge ring (ER4), the gap (D11) is set to 1 mm. In this case, it is assumed that the reaction product attached to the inclined portion (S35) increases because the ions bouncing up from the inclined portion (S36) of the second member (M32) are less likely to strike the inclined portion (S35) of the first member (M31). Therefore, it is preferable that the gap (D1) of the edge ring (ER1) be less than 1 mm.

[0045] The edge ring (ER5) of Comparative Example 4 is a case where the uppermost surface of the inclined portion (S37) of the first member (M41) protrudes upward by a distance (D21) above the uppermost surface of the protrusion of the second member (M42) because the area of ​​the inclined portion (S37) of the first member (M41) is larger than that of the inclined portion (S38) of the second member (M42). In this case, it is assumed that the reaction product attached to the distance (D21) increases because the ions that bounce off the inclined portion (S38) of the second member (M42) are less likely to hit the range of distance (D21) within the inclined portion (S37). As shown in Comparative Examples 3 and 4, when the machining precision of the edge ring (ER) is poor, reaction products adhere to the inclined gaps. Therefore, in the case of an edge ring (ER) with the desired machining precision, the adhesion of reaction products is suppressed, and the effect of suppressing particle generation is demonstrated.

[0046] According to the above embodiment, the edge ring (ER) is an edge ring disposed around a substrate to be processed (wafer (W)), and comprises an annular first member (M1) formed of a first material and having a first inclined portion (inclined portion (S13)) on the lower side of the inner circumference, and an annular second member (M2) formed of a second material different from the first material and having a second inclined portion (inclined portion (S23)) opposite to the first inclined portion and provided at the lower side of the first member (M1). As a result, the frequency of replacement of the edge ring (ER) can be reduced, and leakage of heat transfer gas and generation of particles can be suppressed.

[0047] In addition, according to the present embodiment, the second member (M2) has a protrusion (P21) on the upper part of the inner side, and the second inclined part is provided on the protrusion (P21). As a result, an inclined gap can be provided between the first member (M1) and the second member (M2).

[0048] In addition, according to the present embodiment, the protrusion (P21) is provided on the substrate side of the first member (M1) rather than the inner diameter. As a result, an inclined gap can be provided between the first member (M1) and the second member (M2).

[0049] In addition, according to the present embodiment, the distance between the first inclined section and the second inclined section is less than 1 mm in horizontal distance. As a result, the attachment of reaction products to the first inclined section can be suppressed.

[0050] In addition, according to the present embodiment, the second material has lower rigidity than the first material. As a result, leakage of the heat transfer gas can be suppressed.

[0051] In addition, according to the present embodiment, the first material is silicon carbide, tungsten carbide, magnesium oxide, or yttria, and the second material is silicon. As a result, the frequency of replacing the edge ring (ER) can be reduced, and leakage of the heat transfer gas can also be suppressed.

[0052] In addition, according to the present embodiment, the first member (M1) and the second member (M2) are joined by interposing an adhesive layer (B2). As a result, the frequency of replacing the edge ring (ER) can be reduced, and leakage of the heat transfer gas can also be suppressed.

[0053] In addition, according to the present embodiment, the adhesive layer (B2) includes a silicone-based adhesive. As a result, a first member (M1) and a second member (M2) with different rigidities can be bonded.

[0054] In addition, according to the present embodiment, the adhesive layer (B2) further includes a conductive filler. As a result, the thermal conductivity between the first member (M1) and the second member (M2) can be improved.

[0055] In addition, according to the present embodiment, the adhesive layer (B2) is provided in a recess formed on the upper surface of the second member (M2). As a result, the adhesive layer (B2) can be prevented from being exposed to plasma.

[0056] The embodiments disclosed herein are illustrative in all respects and should not be considered restrictive. The above embodiments may be omitted, substituted, or modified in various forms without departing from the scope and common knowledge of the appended claims.

[0057] For example, the edge ring according to the present disclosure can be applied not only to capacitively coupled plasma (CCP) devices but also to other substrate processing devices. Other substrate processing devices may include inductively coupled plasma (ICP) processing devices, plasma processing devices using a radial line slot antenna, helicon wave excited plasma (HWP) devices, electron cyclotron resonance plasma (ECR) devices, etc.

[0058] In addition, in the substrate processing device (100) of the present embodiment, two electrode plates for electrostatic adsorption are provided on the outer periphery (25b) of the electrostatic chuck (25), but the number of electrode plates provided on the outer periphery (25b) for electrostatic adsorption may be, for example, one or three or more.

[0059] In this specification, semiconductor substrates have been described as the target of plasma treatment, but the target of plasma treatment is not limited to semiconductor substrates. The target of plasma treatment may be various substrates used in LCDs (Liquid Crystal Displays) or FPDs (Flat Panel Displays), or photomasks, CD substrates, printed circuit boards, etc.

Claims

Claim 1 An edge ring disposed around a substrate to be processed, comprising: an annular first member formed of a first material and having a first inclined portion on the lower side of the inner circumference; and an annular second member formed of a second material different from the first material, having a second inclined portion facing each other such that a gap exists between them, and provided at the lower side of the first member. Claim 2 In claim 1, the second member has a protrusion on the upper part of the inner side, and the second inclined portion is an edge ring provided on the protrusion. Claim 3 In claim 2, the protrusion is an edge ring provided on the substrate side of the first member's inner diameter. Claim 4 An edge ring according to any one of claims 1 to 3, wherein the distance between the side of the inner circumference connected to the first inclined portion and the uppermost portion of the second inclined portion is less than 1 mm in horizontal distance. Claim 5 An edge ring according to any one of claims 1 to 3, wherein the second material has lower rigidity than the first material. Claim 6 An edge ring according to any one of claims 1 to 3, wherein the first material is silicon carbide, tungsten carbide, magnesium oxide, or yttria, and the second material is silicon. Claim 7 An edge ring according to any one of claims 1 to 3, wherein the first member and the second member are joined via an adhesive layer. Claim 8 In claim 7, the edge ring, wherein the adhesive layer comprises a silicone-based adhesive. Claim 9 In claim 7, the edge ring, wherein the adhesive layer comprises a conductive filler. Claim 10 In claim 7, the adhesive layer is provided in a concave portion formed on the upper surface of the second member, an edge ring. Claim 11 In any one of claims 1 to 3, the second inclined portion is an edge ring exposed to the plasma processing the substrate to be processed. Claim 12 An edge ring according to any one of claims 1 to 3, wherein the first inclined portion and the second inclined portion are each straight in shape in a vertical cross-section of the edge ring, and the first inclined portion and the second inclined portion are parallel. Claim 13 A substrate processing apparatus comprising: a processing vessel providing a processing space; a placement table provided within the processing vessel and on which a substrate to be processed is placed; and an edge ring arranged to surround the substrate to be processed, wherein the edge ring comprises: an annular first member formed of a first material and having a first inclined portion on the lower side of the inner circumference; and an annular second member formed of a second material different from the first material and having a second inclined portion facing such that a gap exists between it and the first inclined portion, and provided at the lower side of the first member. Claim 14 In claim 13, the second member has a protrusion on the upper part of the inner side, and the second inclined part is provided on the protrusion, forming a substrate processing device. Claim 15 A substrate processing device according to claim 14, wherein the protrusion is provided on the substrate to be processed side rather than the inner diameter of the first member. Claim 16 A substrate processing apparatus according to any one of claims 13 to 15, wherein the distance between the side of the inner circumference connected to the first inclined portion and the uppermost portion of the second inclined portion is less than 1 mm in horizontal distance. Claim 17 A substrate processing apparatus according to any one of claims 13 to 15, wherein the second material has lower rigidity than the first material. Claim 18 A substrate processing apparatus according to any one of claims 13 to 15, wherein the first material is silicon carbide, tungsten carbide, magnesium oxide, or yttria, and the second material is silicon. Claim 19 A substrate processing apparatus according to any one of claims 13 to 15, wherein the first member and the second member are joined via an adhesive layer. Claim 20 In claim 19, the substrate processing apparatus wherein the adhesive layer comprises a silicone-based adhesive. Claim 21 In claim 19, the substrate processing apparatus, wherein the adhesive layer comprises a conductive filler. Claim 22 A substrate processing device according to claim 19, wherein the adhesive layer is provided in a recess formed on the upper surface of the second member. Claim 23 A substrate processing device according to any one of claims 13 to 15, wherein the second inclined portion is exposed to the plasma processing the substrate to be processed. Claim 24 A substrate processing apparatus according to any one of claims 13 to 15, wherein the first inclined portion and the second inclined portion are each straight in shape in a cross-section in the vertical direction of the edge ring, and the first inclined portion and the second inclined portion are parallel.

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