Display device and method for manufacturing the same

Abstract

The present disclosure relates to a display device and a method for manufacturing the same. A display device according to one embodiment comprises a first substrate, a first color filter, a second color filter, and a third color filter located on the first substrate, a plurality of roof layers covering a space that overlaps with each of the first color filter, the second color filter, and the third color filter, a first color conversion layer located within a space that overlaps with the first color filter, a second color conversion layer located within a space that overlaps with the second color filter, a transmission layer located within a space that overlaps with the third color filter, and a capping layer located on the roof layers.

Description

Technology Field

[0001] The present disclosure relates to a display device and a method for manufacturing the same. Background Technology

[0002] A display device is a device that displays an image, and includes Liquid Crystal Displays (LCDs) and Organic Light Emitting Diodes (OLEDs). These display devices are used in a wide variety of electronic devices, such as mobile phones, navigation systems, digital cameras, e-books, portable game consoles, and various terminals.

[0003] An organic light-emitting display comprises two electrodes and an organic light-emitting layer located between them. Electrons injected from one electrode and holes injected from the other electrode combine in the organic light-emitting layer to form excitons. As the excitons transition from the excited state to the ground state, they release energy and emit light.

[0004] Recently, display devices including a color conversion panel have been proposed to reduce light loss and realize a display device with a high color reproduction rate. The color conversion panel may include semiconductor nanocrystals such as quantum dots and can convert incident light into different colors.

[0005] The color conversion layer of such a color conversion panel can be formed via an inkjet process, and the thickness of the color conversion layer may vary depending on the location. For example, the color conversion layer can be formed by ejecting ink within an area separated by partitions, and the thickness may differ between the part near the partitions and the part located between the partitions. Consequently, stains may become visible, and problems such as altered optical properties may occur. The problem to be solved

[0006] The embodiments are intended to provide a display device comprising a color conversion layer having a uniform thickness and a method for manufacturing the same. means of solving the problem

[0007] A display device according to one embodiment comprises a first substrate, a first color filter, a second color filter, and a third color filter located on the first substrate, a plurality of roof layers covering a space that overlaps with each of the first color filter, the second color filter, and the third color filter, a first color conversion layer located within a space that overlaps with the first color filter, a second color conversion layer located within a space that overlaps with the second color filter, a transmission layer located within a space that overlaps with the third color filter, and a capping layer located on the roof layers.

[0008] The first color conversion layer comprises a plurality of first quantum dots and a plurality of scatterers, the second color conversion layer comprises a plurality of second quantum dots and a plurality of scatterers, and the third color conversion layer comprises a plurality of scatterers.

[0009] A display device according to one embodiment further includes a partition located between the plurality of roof layers, and the capping layer may be located on the partition.

[0010] The upper surface of the above bulkhead may be hydrophobic.

[0011] A display device according to one embodiment further includes a low refractive index layer positioned above the first color filter, the second color filter, and the third color filter, wherein the low refractive index layer may be positioned between the first color filter and the first color conversion layer, between the second color filter and the second color conversion layer, and between the third color filter and the transmission layer.

[0012] A display device according to one embodiment further comprises a low refractive index layer located above the first color conversion layer, the second color conversion layer, and the transmission layer, wherein the first color conversion layer is located between the first color filter and the low refractive index layer, the second color conversion layer is located between the second color filter and the low refractive index layer, and the transmission layer may be located between the third color filter and the low refractive index layer.

[0013] A display device according to one embodiment further comprises a second substrate including a first pixel, a second pixel, and a third pixel, and a plurality of light-emitting elements each positioned on the first pixel, the second pixel, and the third pixel of the second substrate, wherein the light-emitting element positioned on the first pixel overlaps with the first color filter and the first color conversion layer, the light-emitting element positioned on the second pixel overlaps with the second color filter and the second color conversion layer, and the light-emitting element positioned on the third pixel overlaps with the third color filter and the transmission layer.

[0014] The first substrate includes a first pixel, a second pixel, and a third pixel, and a display device according to one embodiment further includes a plurality of light-emitting elements each positioned on the first pixel, the second pixel, and the third pixel of the first substrate, wherein the light-emitting element positioned on the first pixel is positioned between the first substrate and the first color conversion layer and overlaps with the first color filter and the first color conversion layer, the light-emitting element positioned on the second pixel is positioned between the first substrate and the second color conversion layer and overlaps with the second color filter and the second color conversion layer, and the light-emitting element positioned on the third pixel is positioned between the first substrate and the transmission layer and overlaps with the third color filter and the transmission layer.

[0015] The above roof layer may include a first roof layer made of an inorganic material, a second roof layer located above the first roof layer and made of an organic material, and a third roof layer located above the second roof layer and made of an inorganic material.

[0016] A display device according to one embodiment may further include a filling layer located on the capping layer.

[0017] A method for manufacturing a display device according to one embodiment comprises the steps of: forming a first color filter, a second color filter, and a third color filter on a first substrate; forming a sacrificial layer on each of the first color filter, the second color filter, and the third color filter; forming a roof layer on the sacrificial layer; removing the sacrificial layer to form a space covered by the roof layer; injecting ink into the space to form a first color conversion layer, a second color conversion layer, and a transmission layer; and forming a capping layer on the roof layer.

[0018] A method for manufacturing a display device according to one embodiment may include, wherein the first color conversion layer comprises a plurality of first quantum dots and a plurality of scatterers, the second color conversion layer comprises a plurality of second quantum dots and a plurality of scatterers, and the third color conversion layer may comprise a plurality of scatterers.

[0019] A method for manufacturing a display device according to one embodiment further includes the step of forming a partition between the plurality of roof layers, and the sacrificial layer may be removed in the process of forming the partition.

[0020] The above sacrificial layer may be made of a positive photoresist, and the above partition may be made of a negative photoresist.

[0021] A method for manufacturing a display device according to one embodiment further comprises the step of forming a low-refractive-index layer on the first color filter, the second color filter, and the third color filter, wherein the low-refractive-index layer may be located between the first color filter and the first color conversion layer, between the second color filter and the second color conversion layer, and between the third color filter and the transmission layer.

[0022] A method for manufacturing a display device according to one embodiment further comprises the step of forming a low-refractive-index layer on the first color conversion layer, the second color conversion layer, and the transmission layer, wherein the first color conversion layer is located between the first color filter and the low-refractive-index layer, the second color conversion layer is located between the second color filter and the low-refractive-index layer, and the transmission layer may be located between the third color filter and the low-refractive-index layer.

[0023] A method for manufacturing a display device according to one embodiment may further include the step of forming a plurality of light-emitting elements on a second substrate, and the step of aligning the first substrate and the second substrate so as to face each other and then bonding them together.

[0024] A method for manufacturing a display device according to one embodiment further includes the step of forming a plurality of light-emitting elements on the first substrate, and after sequentially performing the steps of forming the sacrificial layer on the plurality of light-emitting elements, forming the roof layer, forming the space, forming the first color conversion layer, the second color conversion layer, and the transparent layer, and forming the capping layer, the method may proceed to the step of forming the first color filter, the second color filter, and the third color filter on the first color conversion layer, the second color conversion layer, and the transparent layer.

[0025] The step of forming the roof layer may include the step of forming a first roof layer made of an inorganic material, the step of forming a second roof layer made of an organic material on the first roof layer, and the step of forming a third roof layer made of an inorganic material on the second roof layer.

[0026] A method for manufacturing a display device according to one embodiment may further include the step of forming a filling layer located on the capping layer. Effects of the invention

[0027] According to the embodiments, the thickness of the color conversion layer can be uniformly formed in a display device including a color conversion layer. Brief explanation of the drawing

[0028] FIG. 1 is a schematic cross-sectional view of a display device according to one embodiment. FIG. 2 is a cross-sectional view showing a part of a display device according to one embodiment. FIG. 3 is a cross-sectional view showing a display device according to one embodiment. FIGS. 4 to 8, FIG. 10, and FIG. 12 are process cross-sectional views shown in the order of the manufacturing process of a display device according to one embodiment. FIG. 9 is a perspective view showing one step of the manufacturing process of a display device according to one embodiment. FIG. 11 is a plan view showing one step of the manufacturing process of a display device according to one embodiment. FIG. 13 is a cross-sectional view showing a part of a display device according to one embodiment. FIG. 14 is a cross-sectional view showing a display device according to one embodiment. FIG. 15 is a cross-sectional view showing a part of a display device according to one embodiment. FIG. 16 is a cross-sectional view showing a part of a display device according to one embodiment. FIG. 17 is a plan view showing a part of a display device according to one embodiment. Specific details for implementing the invention

[0029] Hereinafter, various embodiments of the present invention will be described in detail with reference to the attached drawings so that those skilled in the art can easily implement the present invention. The present invention may be embodied in various different forms and is not limited to the embodiments described herein.

[0030] To clearly explain the present invention, parts unrelated to the explanation have been omitted, and the same reference numerals are used for identical or similar components throughout the specification.

[0031] Furthermore, the size and thickness of each component shown in the drawings are depicted arbitrarily for convenience of explanation, and thus the present invention is not necessarily limited to what is illustrated. Thicknesses have been enlarged in the drawings to clearly represent various layers and regions. Additionally, for convenience of explanation, the thickness of some layers and regions has been exaggerated in the drawings.

[0032] Furthermore, when it is said that a part, such as a layer, membrane, region, or plate, is "on" or "on" another part, this includes not only the case where it is "directly above" the other part, but also the case where there is another part in between. Conversely, when it is said that a part is "directly above" another part, it means that there is no other part in between. Also, saying that a part is "on" or "on" a reference part means that it is located above or below the reference part, and does not necessarily mean that it is located "on" or "on" in the direction opposite to gravity.

[0033] Furthermore, throughout the specification, when a part is described as "including" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.

[0034] Additionally, throughout the specification, "planar" means when the subject part is viewed from above, and "cross-sectional" means when the cross-section obtained by vertically cutting the subject part is viewed from the side.

[0035] A display device according to one embodiment will be described below with reference to FIGS. 1 to 3.

[0036] FIG. 1 is a schematic cross-sectional view of a display device according to one embodiment, FIG. 2 is a cross-sectional view showing a part of a display device according to one embodiment, and FIG. 3 is a cross-sectional view showing a display device according to one embodiment. FIG. 2 illustrates a color conversion panel of a display device according to one embodiment.

[0037] As illustrated in FIG. 1, a display device according to one embodiment includes a display panel (1000) and a color conversion panel (2000) that overlap each other.

[0038] The display panel (1000) may include a plurality of pixels (PX1, PX2, PX3), and a light-emitting element (ED) may be located at each pixel (PX1, PX2, PX3). That is, the display panel (1000) may include a plurality of light-emitting elements (ED). The plurality of pixels (PX1, PX2, PX3) may include a first pixel (PX1), a second pixel (PX2), and a third pixel (PX3). Each light-emitting element (ED) may emit light, and the display panel (1000) may display a screen by controlling the light emitted from the light-emitting elements (ED) of each pixel (PX1, PX2, PX3).

[0039] The light-emitting element (ED) may be an organic light-emitting element, and the display panel (1000) may be an organic light-emitting display panel. However, the type of display panel (1000) is not limited to this and may be composed of various types of panels. For example, the display panel (1000) may be a liquid crystal display panel, an electrophoretic display panel, an electrowetting display panel, etc. Additionally, the display panel (1000) may be a next-generation display panel such as a micro light-emitting diode (Micro LED) display panel.

[0040] The display panel (1000) may be made of a flat rigid display panel or a flexible display panel that can be flexibly bent.

[0041] The color conversion panel (2000) may be positioned to face the display panel (1000). The color conversion panel (2000) may include a first color conversion layer (520a), a second color conversion layer (520b), and a transparent layer (520c). The first color conversion layer (520a) may overlap with a light-emitting element (ED) located in the first pixel (PX1). Light emitted from the light-emitting element (ED) of the first pixel (PX1) may pass through the first color conversion layer (520a) and emit light of a first wavelength. The second color conversion layer (520b) may overlap with a light-emitting element (ED) located in the second pixel (PX2). Light emitted from the light-emitting element (ED) of the second pixel (PX2) may pass through the second color conversion layer (520b) and emit light of a second wavelength. The transparent layer (520c) may overlap with the light-emitting element (ED) located in the third pixel (PX3). Light emitted from the light-emitting element (ED) of the third pixel (PX3) may pass through the transparent layer (520c) and emit light of a third wavelength. For example, the light of the first wavelength may be red light, the light of the second wavelength may be green light, and the light of the third wavelength may be blue light. That is, the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3) may be a red pixel, a green pixel, and a blue pixel, respectively. However, this is not limited thereto, and the colors displayed by the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3) may be varied. In addition, in addition to the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3), additional pixels displaying other colors may be included.

[0042] A stacked structure of a color conversion panel of a display device according to one embodiment will be described below with reference to FIG. 2.

[0043] The color conversion panel (2000) may include a substrate (210) and a first color filter (230a), a second color filter (230b), and a third color filter (230c) located on the substrate (210).

[0044] The first color filter (230a) transmits light of the first wavelength and absorbs light of the remaining wavelengths, thereby increasing the purity of the first wavelength light emitted to the outside of the display device.

[0045] The second color filter (230b) transmits light of the second wavelength and absorbs light of the remaining wavelength, thereby increasing the purity of the light of the second wavelength emitted to the outside of the display device.

[0046] The third color filter (230c) transmits light of the third wavelength and absorbs light of the remaining wavelengths, thereby increasing the purity of the light of the third wavelength emitted to the outside of the display device.

[0047] The first color filter (230a), the second color filter (230b), and the third color filter (230c) can each be positioned to overlap with different pixels (PX1, PX2, PX3). At the boundaries of each pixel (PX1, PX2, PX3), the first color filter (230a), the second color filter (230b), and the third color filter (230c) can overlap each other to form a light-blocking area. Although it is illustrated that the first color filter (230a), the second color filter (230b), and the third color filter (230c) all overlap in the light-blocking area, this is not limited thereto. For example, two of the first color filter (230a), the second color filter (230b), and the third color filter (230c) may overlap to form a light-blocking area. For example, at the boundary between the first pixel (PX1) and the second pixel (PX2), the first color filter (230a) and the second color filter (230b) may overlap. At the boundary between the second pixel (PX2) and the third pixel (PX3), the second color filter (230b) and the third color filter (230c) may overlap. At the boundary between the third pixel (PX3) and the first pixel (PX1), the third color filter (230c) and the first color filter (230a) may overlap.

[0048] A low refractive index layer (240) may be positioned on the first color filter (230a), the second color filter (230b), and the third color filter (230c). The low refractive index layer (240) may overlap the entirety of the first color filter (230a), the second color filter (230b), and the third color filter (230c). That is, the low refractive index layer (240) may be positioned entirely on the substrate (210). The low refractive index layer (240) may include an organic or inorganic material with a low refractive index. For example, the refractive index of the low refractive index layer (240) may be about 1.1 or higher and about 1.3 or lower.

[0049] A first capping layer (250) may be positioned on the low refractive index layer (240). The first capping layer (250) is a layer for protecting the low refractive index layer (240) and may include an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), or silicon nitrate (SiOxNy). The first capping layer (250) may have a single layer or a multilayer structure of the above material.

[0050] A roof layer (260) is positioned on the first capping layer (250) to cover the space (510) that overlaps with each pixel (PX1, PX2, PX3). The roof layer (260) may be formed to cover the upper surface and side of each space (510). A plurality of roof layers (260) covering each space (510) may be formed in a separated manner. However, this is not limited thereto, and at least some of the plurality of roof layers (260) covering each space (510) may be connected to each other. For example, a plurality of roof layers (260) adjacent to each other along one direction may be connected to each other. The roof layer (260) may include an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), or silicon nitrate (SiOxNy). The roof layer (260) may be a single layer or a multilayer structure of the said material.

[0051] A first color conversion layer (520a), a second color conversion layer (520b), and a transmission layer (520c) may be located within each of the multiple spaces (510) covered by the roof layer (260). Each of the multiple spaces (510) is filled with the first color conversion layer (520a), the second color conversion layer (520b), and the transmission layer (520c). The thickness of the first color conversion layer (520a) within the space (510) may be constant. The thickness of the second color conversion layer (520b) within the space (510) may be constant. The thickness of the transmission layer (520c) within the space (510) may be constant. Accordingly, the optical characteristics of each pixel (PX1, PX2, PX3) can be maintained consistently overall.

[0052] The first color conversion layer (520a) may overlap with the first color filter (230a). The first color conversion layer (520a) may not overlap with the second color filter (230b) and the third color filter (230c). The first color conversion layer (520a) may convert light incident from the light-emitting element (ED) of the first pixel (PX1) into light of a first wavelength. At this time, the light of the first wavelength may be red light with a maximum emission peak wavelength of about 600 nm to about 650 nm, for example, about 620 nm to about 650 nm. The first color conversion layer (520a) may include a plurality of first quantum dots (521a) and a plurality of scatterers (530).

[0053] The second color conversion layer (520b) may overlap with the second color filter (230b). The second color conversion layer (520b) may not overlap with the first color filter (230a) and the third color filter (230c). The second color conversion layer (520b) may convert light incident from the light-emitting element (ED) of the second pixel (PX2) into light of a second wavelength. At this time, the light of the second wavelength may be green light with a maximum emission peak wavelength of about 500 nm to about 550 nm, for example, about 510 nm to about 550 nm. The second color conversion layer (520b) may include a plurality of second quantum dots (521b) and a plurality of scatterers (530).

[0054] The transmission layer (520c) may overlap with the third color filter (230c). The transmission layer (520c) may not overlap with the first color filter (230a) and the second color filter (230b). The transmission layer (520c) may transmit light incident from the light-emitting element (ED) of the third pixel (PX3). The light passing through the transmission layer (520c) may be light of a third wavelength. The light of the third wavelength may be blue light with a maximum emission peak wavelength of about 380 nm to about 480 nm, for example, about 420 nm or more, about 430 nm or more, about 440 nm or more, or about 445 nm or more, and about 470 nm or less, about 460 nm or less, or about 455 nm or less. The transmission layer (520c) may include a plurality of scatterers (530).

[0055] Multiple scatterers (530) can scatter light incident on the first color conversion layer (520a), the second color conversion layer (520b), and the transmission layer (520c) to improve light efficiency.

[0056] Each of the first quantum dot (521a) and the second quantum dot (521b) (hereinafter also referred to as semiconductor nanocrystals) may independently comprise a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, a Group IV element or compound, a Group I-III-VI compound, a Group II-III-VI compound, a Group I-II-IV-VI compound, or a combination thereof. The quantum dots may not contain cadmium.

[0057] The above Group II-VI compounds are diatomic compounds selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof; ternary compounds selected from the group consisting of AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and mixtures thereof; and may be selected from the group consisting of four-element compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof. The group II-VI compounds may further include a group III metal.

[0058] The above III-V group compounds may be selected from the group consisting of: diatomic compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb, InPAs, InZnP, InPSb, and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, InZnP, and mixtures thereof. The above III-V group compounds may further include a group II metal (e.g., InZnP).

[0059] The above IV-VI group compounds may be selected from the group consisting of diatomic compounds selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof.

[0060] The above Group IV elements or compounds may be selected from the group consisting of monatomic compounds selected from the group consisting of Si, Ge, and combinations thereof; and diatomic compounds selected from the group consisting of SiC, SiGe, and combinations thereof, but are not limited thereto.

[0061] Examples of the above Group I-III-VI compounds include, but are not limited to, CuInSe2, CuInS2, CuInGaSe, and CuInGaS. Examples of the above Group I-II-IV-VI compounds include, but are not limited to, CuZnSnSe and CuZnSnS. The above Group IV element or compound may be selected from the group consisting of a monatomic element selected from the group consisting of Si, Ge, and mixtures thereof; and a diatomic compound selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0062] The above Group II-III-VI compounds may be selected from the group consisting of ZnGaS, ZnAlS, ZnInS, ZnGaSe, ZnAlSe, ZnInSe, ZnGaTe, ZnAlTe, ZnInTe, ZnGaO, ZnAlO, ZnInO, HgGaS, HgAlS, HgInS, HgGaSe, HgAlSe, HgInSe, HgGaTe, HgAlTe, HgInTe, MgGaS, MgAlS, MgInS, MgGaSe, MgAlSe, MgInSe, and combinations thereof, but are not limited thereto.

[0063] The above Group I-II-IV-VI compounds may be selected from CuZnSnSe and CuZnSnS, but are not limited thereto.

[0064] In one embodiment, the quantum dot may not contain cadmium. The quantum dot may include semiconductor nanocrystals based on a Group III-V compound containing indium and phosphorus. The Group III-V compound may further include zinc. The quantum dot may include semiconductor nanocrystals based on a Group II-VI compound containing a chalcogen element (e.g., sulfur, selenium, tellurium, or a combination thereof) and zinc.

[0065] In quantum dots, the aforementioned binary compounds, ternary compounds, and / or quaternary compounds may exist within the particle at a uniform concentration, or may exist within the same particle with concentration distributions divided into partially different states. Additionally, one quantum dot may have a core / shell structure surrounding another quantum dot. The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases toward the center.

[0066] In some embodiments, the quantum dot may have a core-shell structure comprising a core containing the aforementioned nanocrystal and a shell surrounding the core. The shell of the quantum dot may serve as a protective layer to maintain semiconductor properties by preventing chemical degradation of the core and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell may be a single layer or a multilayer. The interface between the core and the shell may have a concentration gradient in which the concentration of elements present in the shell decreases toward the center. Examples of the shell of the quantum dot include metal or non-metal oxides, semiconductor compounds, or combinations thereof.

[0067] For example, the oxide of the metal or nonmetal mentioned above may be exemplified as a binary compound such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, or a ternary compound such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, but the present invention is not limited thereto.

[0068] In addition, the above semiconductor compounds may be examples of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc., but the present invention is not limited thereto.

[0069] The interface between the core and the shell may have a concentration gradient in which the concentration of elements present in the shell decreases toward the center. Additionally, the semiconductor nanocrystal may have a structure comprising a single semiconductor nanocrystal core and a multilayer shell surrounding it. In one embodiment, the multilayer shell may have two or more layers, e.g., two, three, four, five, or more layers. Two adjacent layers of the shell may have a single composition or different compositions. Each layer in the multilayer shell may have a composition that varies along the radius.

[0070] Quantum dots can have a full width of half maximum (FWHM) of the emission wavelength spectrum of about 45 nm or less, preferably about 40 nm or less, and more preferably about 30 nm or less, and color purity or color reproducibility can be improved in this range. In addition, since the light emitted through these quantum dots is emitted in all directions, the viewing angle can be improved.

[0071] The above quantum dot may have a shell material and a core material having different energy band gaps. For example, the energy band gap of the shell material may be larger than that of the core material. In another embodiment, the energy band gap of the shell material may be smaller than that of the core material. The above quantum dot may have a multilayer shell. In a multilayer shell, the energy band gap of the outer layer may be larger than that of the inner layer (i.e., the layer closest to the core). In a multilayer shell, the energy band gap of the outer layer may be smaller than that of the inner layer.

[0072] Quantum dots can control their absorption / emission wavelengths by adjusting their composition and size. The maximum emission peak wavelength of the quantum dots can have a wavelength range of ultraviolet to infrared or longer.

[0073] The quantum dot may include an organic ligand (e.g., having a hydrophobic residue and / or a hydrophilic residue). The organic ligand residue may be bonded to the surface of the quantum dot. The organic ligand may include RCOOH, RNH2, R2NH, R3N, RSH, R3PO, R3P, ROH, RCOOR, RPO(OH)2, RHPOOH, R2POOH, or a combination thereof, wherein R is independently a C3 to C40 (e.g., C5 or more and C24 or less) substituted or unsubstituted alkyl, a C3 to C40 (e.g., C5 or more and C24 or less) substituted or unsubstituted aliphatic hydrocarbon group such as a C3 to C40 (e.g., substituted or unsubstituted alkenyl), an C6 to C40 (e.g., C6 or more and C20 or less) substituted or unsubstituted aromatic hydrocarbon group such as a C6 to C40 (e.g., C6 or more and C20 or less) substituted or unsubstituted aryl group, or a combination thereof.

[0074] Examples of the above organic ligands include thiol compounds such as methanethiol, ethanethiol, propanethiol, butanethiol, pentanthiol, hexanethiol, octanethiol, dodecanethiol, hexadecanethiol, octadecanethiol, and benzylthiol; amines such as methaneamine, ethaneamine, propaneamine, butanamine, pentylamine, hexylamine, octylamine, nonylamine, decylamine, dodecylamine, hexadecylamine, octadecylamine, dimethylamine, diethylamine, dipropylamine, tributylamine, and trioctylamine; and carboxylic acid compounds such as methanoic acid, ethanoic acid, propanoic acid, butanoic acid, pentanic acid, hexanoic acid, heptanoic acid, octanoic acid, dodecanoic acid, hexadecanoic acid, octadecanic acid, oleic acid, and benzoic acid. Phosphine compounds such as methylphosphine, ethylphosphine, propylphosphine, butylphosphine, pentylphosphine, octylphosphine, dioctylphosphine, tributylphosphine, trioctylphosphine, etc.; phosphine compounds or their oxide compounds such as methylphosphine oxide, ethylphosphine oxide, propylphosphine oxide, butylphosphine oxide, pentylphosphine oxide, tributylphosphine oxide, octylphosphine oxide, dioctylphosphine oxide, trioctylphosphine oxide, etc.; diphenylphosphine, triphenylphosphine compounds or their oxide compounds; C5 to C20 alkyl phosphine acids such as hexylphosphine, octylphosphine, dodecanephosphine, tetradecanephosphine, hexadecanephosphine, octadecanphosphine, etc., and C5 to C20 alkyl phosphonic acids; etc., but are not limited thereto. Quantum dots may include a hydrophobic organic ligand alone or as a mixture of one or more. The hydrophobic organic ligand may not include photopolymerizable residues (e.g., acrylate groups, methacrylate groups, etc.).

[0075] A partition wall (265) may be located between adjacent multiple roof layers (260). The partition wall (265) may overlap with the light-blocking area where the first color filter (230a), the second color filter (230b), and the third color filter (230c) overlap. Accordingly, the partition wall (265) may be located at the boundary between each pixel (PX1, PX2, PX3). The partition wall (265) may overlap with the edge of the roof layer (260). However, it is not limited thereto, and the partition wall (265) may be spaced apart from the roof layer (260) without overlapping.

[0076] A second capping layer (280) may be located on the roof layer (260) and the partition (265). The second capping layer (280) may be located entirely on the substrate (210). The second capping layer (280) is a layer covering the first color conversion layer (520a), the second color conversion layer (520b), and the transparent layer (520c), and may be made of an inorganic material. For example, the second capping layer (280) may include an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), or silicon nitrate (SiOxNy). The second capping layer (280) may be a single layer or a multilayer structure of the said material.

[0077] A filling layer (290) may be positioned on the second capping layer (280). The filling layer (290) may be positioned entirely on the substrate (210). The filling layer (290) is positioned between the display panel (1000) and the color conversion panel (2000) when the display panel (1000) and the color conversion panel (2000) are bonded together.

[0078] Hereinafter, with reference to FIG. 3, the state in which the display panel (1000) and the color conversion panel (2000) are bonded together will be described. In FIG. 3, the color conversion panel (2000) shown in FIG. 2 can be combined to face the display panel (1000) with its top and bottom flipped.

[0079] A display panel (1000) may include a substrate (110), a semiconductor (131) located on the substrate (110), a transistor (TFT) including a gate electrode (124), a source electrode (173) and a drain electrode (175), a gate insulating film (120), a first interlayer insulating film (160), a second interlayer insulating film (180), a pixel electrode (191), a light-emitting layer (370), a bank layer (350), a common electrode (270), and an encapsulation layer (400).

[0080] The substrate (110) may include a material having rigid properties such as glass, or a flexible material that can be bent such as plastic or polyimide. A buffer layer (111) may be further positioned on the substrate (110) to flatten the surface of the substrate (110) and to block impurities from penetrating into the semiconductor (131). The buffer layer (111) may include an inorganic material, for example, an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), or silicon nitrate (SiOxNy). The buffer layer (111) may be a single layer or a multilayer structure of the above material. A barrier layer (not shown) may be further positioned on the substrate (110). At this time, the barrier layer may be located between the substrate (110) and the buffer layer (111). The barrier layer may include inorganic insulating materials such as silicon nitride (SiNx), silicon oxide (SiOx), and silicon nitrate (SiOxNy). The barrier layer (BA) may be a single layer or a multilayer structure of the above materials.

[0081] The semiconductor (131) may be positioned on the substrate (110). The semiconductor (131) may include any one of amorphous silicon, polycrystalline silicon, and oxide semiconductor. For example, the semiconductor (131) may include low-temperature polysilicon (LTPS) or an oxide semiconductor material including at least one of zinc (Zn), indium (In), gallium (Ga), tin (Sn), and mixtures thereof. For example, the semiconductor (131) may include IGZO (Indium-Gallium-Zinc Oxide). The semiconductor (131) may include a channel region, a source region, and a drain region, which are distinguished depending on whether or not there is impurity doping. The source region and the drain region may have conductivity characteristics corresponding to a conductor.

[0082] The gate insulating film (120) can cover the semiconductor (131) and the substrate (110). The gate insulating film (120) may include an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), or silicon nitrate (SiOxNy). The gate insulating film (120) may be a single layer or a multilayer structure of the above material.

[0083] The gate electrode (124) may be positioned on the gate insulating film (120). The gate electrode (124) may include a metal or metal alloy such as copper (Cu), molybdenum (Mo), aluminum (Al), silver (Ag), chromium (Cr), tantalum (Ta), or titanium (Ti). The gate electrode (124) may be composed of a single layer or multiple layers. The region of the semiconductor (131) that overlaps with the planar gate electrode (124) may be a channel region.

[0084] The first interlayer insulating film (160) can cover the gate electrode (124) and the gate insulating film (120). The first interlayer insulating film (160) may include an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), or silicon nitrate (SiOxNy). The first interlayer insulating film (160) may have a single layer or a multilayer structure of the above material.

[0085] The source electrode (173) and the drain electrode (175) may be located on the first interlayer insulating film (160). The source electrode (173) and the drain electrode (175) are respectively connected to the source region and the drain region of the semiconductor (131) by an opening formed in the first interlayer insulating film (160) and the gate insulating film (120). The aforementioned semiconductor (131), gate electrode (124), source electrode (173), and drain electrode (175) constitute a single transistor (TFT). According to an embodiment, the transistor (TFT) may include only the source region and the drain region of the semiconductor (131) instead of the source electrode (173) and the drain electrode (175). Although one transistor (TFT) is shown for each pixel (PX1, PX2, PX3), it is not limited thereto, and multiple transistors (TFTs) may be located in each pixel (PX1, PX2, PX3).

[0086] The source electrode (173) and drain electrode (175) may include metals or metal alloys such as aluminum (Al), copper (Cu), silver (Ag), gold (Au), platinum (Pt), palladium (Pd), nickel (Ni), molybdenum (Mo), tungsten (W), titanium (Ti), chromium (Cr), and tantalum (Ta). The source electrode (173) and drain electrode (175) may be composed of a single layer or multiple layers. According to one embodiment, the source electrode (173) and drain electrode (175) may be composed of a triple layer including an upper layer, a middle layer, and a lower layer, wherein the upper layer and the lower layer may include titanium (Ti), and the middle layer may include aluminum (Al).

[0087] The second interlayer insulating film (180) may be positioned over the source electrode (173) and the drain electrode (175). The second interlayer insulating film (180) covers the source electrode (173), the drain electrode (175), and the first interlayer insulating film (160). The second interlayer insulating film (180) is intended to flatten the surface of the substrate (110) equipped with the transistor (TFT), and may be an organic insulating film and may include one or more materials selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenolic resin.

[0088] The pixel electrode (191) may be positioned on the second interlayer insulating film (180). The pixel electrode (191) is also called an anode electrode and may be composed of a single layer or multiple layers including a transparent conductive oxide film or a metal material. The transparent conductive oxide film may include ITO (Indium Tin Oxide), poly-ITO, IZO (Indium Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), and ITZO (Indium Tin Zinc Oxide), etc. The metal material may include silver (Ag), molybdenum (Mo), copper (Cu), gold (Au), and aluminum (Al), etc.

[0089] The second interlayer insulating film (180) may include a via hole (81) that exposes the drain electrode (175). The drain electrode (175) and the pixel electrode (191) can be physically and electrically connected through the via hole (81) of the second interlayer insulating film (180). Accordingly, the pixel electrode (191) can receive an output current to be transmitted from the drain electrode (175) to the light-emitting layer (370).

[0090] A bank layer (350) may be positioned on the pixel electrode (191) and the second interlayer insulating film (180). The bank layer (350) is also called a Pixel Defining Layer (PDL) and includes a pixel opening (351) that overlaps with at least a portion of the pixel electrode (191). At this time, the pixel opening (351) may overlap with the center of the pixel electrode (191) and may not overlap with the edge portion of the pixel electrode (191). Accordingly, the size of the pixel opening (351) may be smaller than the size of the pixel electrode (191). The bank layer (350) may delineate the formation location of the light-emitting layer (370) so that the light-emitting layer (370) may be positioned on the portion where the upper surface of the pixel electrode (191) is exposed. The bank layer (350) may be an organic insulating film comprising one or more materials selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenolic resin. According to an embodiment, the bank layer (350) may be formed as a Black Pixel Define Layer (BPDL) comprising a black pigment.

[0091] The bank layer (350) may be located at the boundary between multiple pixels (PX1, PX2, PX3). The bank layer (350) may overlap with the partition wall (265). Additionally, the bank layer (350) may overlap with the light-blocking area where the first color filter (230a), the second color filter (230b), and the third color filter (230c) overlap.

[0092] Each of the multiple pixel openings (351) may have a shape similar to the pixel electrode (191) on a plane. For example, the pixel openings (351) and the pixel electrode (191) may be polygonal on a plane. In this case, the corner portions of the pixel openings (351) and the pixel electrode (191) may be chamfered. However, the shape of the pixel openings (351) and the shape of the pixel electrode (191) are not limited thereto and may be changed in various ways.

[0093] At this time, a plurality of pixel electrodes (191) corresponding to each of the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3) may have different sizes on a plane. Likewise, a plurality of pixel openings (351) corresponding to each of the first pixel (PX1), the second pixel (PX2), and the third pixel (PX3) may have different sizes on a plane. For example, the pixel opening (351) and pixel electrode (191) corresponding to the first pixel (PX1) may each have a larger size on a plane than the pixel opening (351) and pixel electrode (191) corresponding to the second pixel (PX2). Additionally, the pixel opening (351) and pixel electrode (191) corresponding to the first pixel (PX1) may each have a smaller or similar size on a plane than the pixel opening (351) and pixel electrode (191) corresponding to the third pixel (PX3). However, it is not limited to this, and each pixel opening (351) and pixel electrode (191) can be set to have various sizes.

[0094] The light-emitting layer (370) may be located within a pixel opening (351) partitioned by a bank layer (350). The light-emitting layer (370) may include a low-molecular or high-molecular organic material. Although the light-emitting layer (370) is depicted as a single layer, in reality, auxiliary layers such as an electron injection layer, an electron transport layer, a hole transport layer, and a hole injection layer may also be included above and below the light-emitting layer (370). A hole injection layer and a hole transport layer may be located below the light-emitting layer (370), and an electron transport layer and an electron injection layer may be located above the light-emitting layer (370). Additionally, another light-emitting layer may be located above the light-emitting layer (370). That is, two or more light-emitting layers (370) may be stacked.

[0095] Although the city has been omitted, a spacer may be positioned on the bank layer (350). The spacer may contain the same material as the bank layer (350). However, it is not limited thereto, and the spacer may be made of a material different from that of the bank layer (350). The spacer may be an organic insulating film comprising one or more materials selected from the group consisting of polyimide, polyamide, acrylic resin, benzocyclobutene, and phenolic resin.

[0096] The common electrode (270) may be located on the bank layer (350) and the light-emitting layer (370). The common electrodes (270) of each pixel (PX1, PX2, PX3) may be connected to each other. The common electrode (270) may be formed to be connected overall on the substrate (110). The common electrode (270) is also called a cathode electrode and may be formed as a transparent conductive layer including ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IGZO (Indium Gallium Zinc Oxide), and ITZO (Indium Tin Zinc Oxide). The common electrode (270) may be made of a metallic material such as silver (Ag), magnesium (Mg), etc., or may be made in a mixed form. At this time, the thickness of the common electrode (270) may be adjusted to form a transparent conductive layer. Additionally, the common electrode (270) may have a translucent characteristic, and in this case, it may form a micro cavity together with the pixel electrode (191).

[0097] The pixel electrode (191), the light-emitting layer (370), and the common electrode (270) can form a light-emitting element (ED). The portion where the pixel electrode (191), the light-emitting layer (370), and the common electrode (270) overlap in each pixel (PX1, PX2, PX3) can become the light-emitting region of each light-emitting element (ED).

[0098] The light-emitting element (ED) located in the first pixel (PX1) may overlap with the first color conversion layer (520a) and the first color filter (230a). The light-emitting element (ED) located in the first pixel (PX1) may not overlap with the second color conversion layer (520b), the transmission layer (520c), the second color filter (230b), and the third color filter (230c). Light emitted from the light-emitting element (ED) of the first pixel (PX1) is converted into light of a first wavelength as it passes through the first color conversion layer (520a) and may be emitted to the outside as it passes through the first color filter (230a).

[0099] The light-emitting element (ED) located in the second pixel (PX2) may overlap with the second color conversion layer (520b) and the second color filter (230b). The light-emitting element (ED) located in the second pixel (PX2) may not overlap with the first color conversion layer (520a), the transmission layer (520c), the first color filter (230a), and the third color filter (230c). Light emitted from the light-emitting element (ED) of the second pixel (PX2) is converted into light of a second wavelength as it passes through the second color conversion layer (520b) and may be emitted to the outside as it passes through the second color filter (230b).

[0100] The light-emitting element (ED) located in the third pixel (PX3) may overlap with the transmission layer (520c) and the third color filter (230c). The light-emitting element (ED) located in the third pixel (PX3) may not overlap with the first color conversion layer (520a), the second color conversion layer (520b), the first color filter (230a), and the second color filter (230b). Light of the third wavelength emitted from the light-emitting element (ED) of the third pixel (PX3) may pass through the transmission layer (520c) and the first color filter (230a) in sequence and be emitted to the outside.

[0101] The encapsulation layer (400) may be positioned on the common electrode (270). The encapsulation layer (400) may include at least one inorganic film and at least one organic film. In this embodiment, the encapsulation layer (400) may include a first inorganic encapsulation layer (410), an organic encapsulation layer (420), and a second inorganic encapsulation layer (430). However, this is merely an example, and the number of inorganic films and organic films constituting the encapsulation layer (400) may be varied. For example, the encapsulation layer (400) may be stacked in the order of a first inorganic encapsulation layer, a second inorganic encapsulation layer, a first organic encapsulation layer, and a third inorganic encapsulation layer. Alternatively, the encapsulation layer (400) may be stacked in the order of a first inorganic encapsulation layer, a first organic encapsulation layer, a second inorganic encapsulation layer, and a third inorganic encapsulation layer. The display panel (1000) may include a display area for displaying a screen and a surrounding area surrounding the display area. The first inorganic encapsulation layer (410), the organic encapsulation layer (420), and the second inorganic encapsulation layer (430) may be located in a part of the display area and the surrounding area. According to an embodiment, the organic encapsulation layer (420) may be formed centered on the display area, and the first inorganic encapsulation layer (410) and the second inorganic encapsulation layer (430) may be formed up to the surrounding area. The encapsulation layer (400) is intended to protect the light-emitting element (ED) from moisture or oxygen that may enter from the outside, and one end of the first inorganic encapsulation layer (410) and the second inorganic encapsulation layer (430) may be formed to make direct contact.

[0102] The encapsulation layer (430) may come into contact with the color conversion panel (2000). The encapsulation layer (430) may come into contact with the filling layer (290). The second inorganic encapsulation layer (430) may come into contact with the filling layer (290). However, this is merely an example, and other layers may be located between the encapsulation layer (430) and the filling layer (290).

[0103] Although the city has been omitted, the display device according to one embodiment may further include a sensing unit that detects touch. The sensing unit may include a plurality of sensing electrodes, etc., and the sensing unit may be located between the display panel (1000) and the color conversion panel (2000).

[0104] Next, a method for manufacturing a display device according to one embodiment will be described with further reference to FIGS. 4 to 12.

[0105] FIGS. 4 to 8, FIG. 10, and FIG. 12 are process cross-sectional views shown in the order of the manufacturing process of a display device according to one embodiment. FIG. 9 is a perspective view showing one step of the manufacturing process of a display device according to one embodiment, and FIG. 11 is a plan view showing one step of the manufacturing process of a display device according to one embodiment.

[0106] First, as shown in FIG. 4, a first color filter (230a), a second color filter (230b), and a third color filter (230c) are sequentially formed on a substrate (210).

[0107] A material capable of transmitting light of a first wavelength is applied on a substrate (210) and patterned to form a first color filter (230a). Next, a material capable of transmitting light of a second wavelength is applied and patterned to form a second color filter (230b). Next, a material capable of transmitting light of a third wavelength is applied and patterned to form a third color filter (230c).

[0108] In some areas, at least two of the first color filter (230a), the second color filter (230b), and the third color filter (230c) may be formed to overlap each other. The first color filter (230a), the second color filter (230b), and the third color filter (230c) may overlap each other to form a light-blocking area.

[0109] Next, a low refractive index layer (240) can be formed on the first color filter (230a), the second color filter (230b), and the third color filter (230c) using a material with a low refractive index. The low refractive index layer (240) can be formed entirely on the substrate (210), and a separate patterning process may not be performed. The low refractive index layer (240) may include an organic material or an inorganic material having a low refractive index of about 1.1 or more and about 1.3 or less.

[0110] Next, a first capping layer (250) can be formed on the low refractive index layer (240) using an inorganic material. The first capping layer (250) can be formed entirely on the substrate (210) without performing a separate patterning process. The first capping layer (250) may include an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), or silicon nitrate (SiOxNy). The first capping layer (250) may have a single layer or a multilayer structure of the above material.

[0111] As illustrated in FIG. 5, a sacrificial layer (500) can be formed by coating a photosensitive material on the first capping layer (250) and patterning it through a photo process. The sacrificial layer (500) may be made of a positive photoresist. The sacrificial layer (500) may overlap with the first color filter (230a), the second color filter (230b), and the third color filter (230c). The sacrificial layer (500) may not overlap with the light-blocking area where at least two of the first color filter (230a), the second color filter (230b), and the third color filter (230c) overlap.

[0112] As illustrated in FIG. 6, a roof layer (260) may be formed on the sacrificial layer (500). The roof layer (260) is formed to cover the upper surface and sides of the sacrificial layer (500). The roof layer (260) may include an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), or silicon nitrate (SiOxNy). The roof layer (260) may be a single layer or a multilayer structure of said material.

[0113] As illustrated in FIG. 7, the roof layer (260) can be patterned to remove the portion of the roof layer (260) located between adjacent sacrificial layers (500). The roof layer (260) may not overlap with the light-blocking area where at least two of the first color filter (230a), the second color filter (230b), and the third color filter (230c) overlap. Thus, a plurality of roof layers (260) separated from each other may be formed.

[0114] As illustrated in FIGS. 8 and 9, a photosensitive material can be coated on a roof layer (260) and patterned through a photo process to form a partition (265). The partition (265) may be made of negative photoresist. The partition (265) may be patterned so that it is positioned between a plurality of roof layers (260). The partition (265) may overlap with the light-blocking area where the first color filter (230a), the second color filter (230b), and the third color filter (230c) overlap. At this time, the partition (265) may partially overlap with the roof layer (260). The partition (265) may overlap with the edge of the roof layer (260). However, it is not limited thereto, and the partition (265) may be patterned so that it is spaced apart from the roof layer (260) without overlapping.

[0115] A partition wall (265) may be formed between adjacent roof layers (260) in a first direction (D1). The partition wall (265) may be extended along a second direction (D2) perpendicular to the first direction (D1). The upper surface of the partition wall (265) may be hydrophobic.

[0116] In the process of patterning the roof layer (260) as described above, adjacent roof layers (260) in the second direction (D2) can be formed so that they are not connected to each other and are separated. Accordingly, the sacrificial layer (500) located below the roof layer (260) can be exposed to the outside. The sacrificial layer (500) can be removed together during the process of patterning the bulkhead (265). When the sacrificial layer (500) is removed, a space (510) can be formed in the place where the sacrificial layer (500) was located. That is, a space (510) covered by the roof layer (260) is formed, and the roof layer (260) takes the form of covering the upper surface and side of the space (510). At this time, a part of the side of the space (510) may not be covered by the roof layer (260) and may be exposed. In this way, the part where the space (510) located below the roof layer (260) is exposed can become the injection port (261). The injection port (261) is located between adjacent roof layers (260) in the second direction (D2).

[0117] As illustrated in FIGS. 10 and 11, an inkjet process can be performed to form a first color conversion layer (520a), a second color conversion layer (520b), and a transmission layer (520c) within a space (510) covered by a roof layer (260). When ink (540a, 540b, 540c) is dropped between adjacent roof layers (260) in the second direction (D2), the ink (540a, 540b, 540c) can be injected into the space (510) through an injection port (261) by capillary force.

[0118] First, when a first ink (540a) containing a first quantum dot (521a) and a scatterer (530) is dropped around an injection port (261) that exposes a space (510) overlapping with a first color filter (230a), the first ink (540a) can be injected into the space (510) to form a first color conversion layer (520a). The first color conversion layer (520a) can overlap with the first color filter (230a). The first color conversion layer (520a) may not overlap with the second color filter (230b) and the third color filter (230c).

[0119] Next, when a second ink (540b) containing a second quantum dot (521b) and a scatterer (530) is dropped around an injection port (261) that exposes a space (510) overlapping with the second color filter (230b), the second ink (540b) can be injected into the space (510) to form a second color conversion layer (520b). The second color conversion layer (520b) may overlap with the second color filter (230b). The second color conversion layer (520b) may not overlap with the first color filter (230a) and the third color filter (230c).

[0120] Next, when a third ink (540c) containing a scatterer (530) is dropped around an injection port (261) that exposes a space (510) overlapping with a third color filter (230c), the third ink (540c) can be injected into the space (510) to form a transparent layer (520c). The transparent layer (520c) may overlap with the third color filter (230c). The transparent layer (520c) may not overlap with the first color filter (230a) and the second color filter (230b).

[0121] A partition (265) is positioned between adjacent roof layers (260) in the first direction (D1), and since the upper surface of the partition (265) is made of hydrophobic material, it is possible to prevent ink (540a, 540b, 540c) from being injected into other spaces (510). For example, during the process of injecting the first ink (540a) into the space (510) that overlaps with the first color filter (230a), it is possible to prevent it from being injected into the space (510) that overlaps with the second color filter (230b) or the third color filter (230c).

[0122] As illustrated in FIG. 12, a second capping layer (280) can be formed using an inorganic material on the roof layer (260) and the partition (265). The second capping layer (280) can be formed entirely on the substrate (210) without performing a separate patterning process. The second capping layer (280) may include an inorganic insulating material such as silicon nitride (SiNx), silicon oxide (SiOx), or silicon nitrate (SiOxNy). The second capping layer (280) may be a single layer or a multilayer structure of the said material. The injection port (261) can be sealed by the second capping layer (280). The second capping layer (280) may be formed to cover the upper surface and the side surface of the roof layer (260).

[0123] Next, a filling layer (290) can be formed on the second capping layer (280). The filling layer (290) can be formed entirely on the second capping layer (280), and a separate patterning process may not be performed.

[0124] As described above, a color conversion panel (2000) can be formed, and a display panel (1000) can be formed separately. Then, the display panel (1000) and the color conversion panel (2000) can be aligned so that they face each other and then bonded together.

[0125] In a display device according to one embodiment, a space (510) covered by a roof layer (260) is formed, and ink (540a, 540b, 540c) is injected into the space (510) to form a first color conversion layer (520a), a second color conversion layer (520b), and a transparent layer (520c). Accordingly, the space (510) may have a constant height, and the first color conversion layer (520a), the second color conversion layer (520b), and the transparent layer (520c) formed within the space (510) may have a constant thickness. Accordingly, the optical characteristics of each pixel (PX1, PX2, PX3) can be maintained consistently overall.

[0126] Next, referring to FIG. 13, a display device according to one embodiment is described as follows.

[0127] Since the display device according to the embodiment illustrated in FIG. 13 has a significant number of parts identical to the display device according to the embodiments illustrated in FIG. 1 to 3, the description of the identical parts is omitted. In this embodiment, the positions of the low refractive index layer and the first capping layer differ from those in the preceding embodiment and will be explained further below.

[0128] FIG. 13 is a cross-sectional view showing a part of a display device according to one embodiment. FIG. 13 illustrates a color conversion panel of a display device according to one embodiment.

[0129] A display device according to one embodiment may include a display panel and a color conversion panel, similar to the preceding embodiment.

[0130] As illustrated in FIG. 13, a color conversion panel of a display device according to one embodiment may include a substrate (210), a first color filter (230a), a second color filter (230b), and a third color filter (230c) located on the substrate (210).

[0131] In the preceding embodiment, a low-refractive-index layer (240) and a first capping layer (250) are positioned on the first color filter (230a), the second color filter (230b), and the third color filter (230c), and a first color conversion layer (520a), the second color conversion layer (520b), and a transmission layer (520c) may be positioned on the first capping layer (250). In the present embodiment, a first color conversion layer (520a), the second color conversion layer (520b), and a transmission layer (520c) are positioned on the first color filter (230a), the second color filter (230b), and the third color filter (230c), and a low-refractive-index layer and a first capping layer (250) may be positioned on the first color conversion layer (520a), the second color conversion layer (520b), and the transmission layer (520c).

[0132] The first color conversion layer (520a) may overlap with the first color filter (230a), the second color conversion layer (520b) may overlap with the second color filter (230b), and the transmission layer (520c) may overlap with the third color filter (230c). Although it is illustrated that the first color conversion layer (520a) is located directly above the first color filter (230a), the second color conversion layer (520b) is located directly above the second color filter (230b), and the transmission layer (520c) is located directly above the third color filter (230c), it is not limited thereto. An insulating layer may be located on the first color filter (230a), the second color filter (230b), and the third color filter (230c), and the first color conversion layer (520a), the second color conversion layer (520b), and the transmission layer (520c) may be located on the insulating layer. That is, an insulating layer may be located between the first color filter (230a) and the first color conversion layer (520a), an insulating layer may be located between the second color filter (230b) and the second color conversion layer (520b), and an insulating layer may be located between the third color filter (230c) and the transmission layer (520c).

[0133] The first color conversion layer (520a), the second color conversion layer (520b), and the transmission layer (520c) may each be located within a plurality of spaces (510) covered by a roof layer (260). A partition wall (265) may be located between adjacent roof layers (260). A second capping layer (280) may be located on the roof layer (260) and the partition wall (265).

[0134] A low-refractive-index layer (240) may be positioned on the second capping layer (280). A first capping layer (250) may be positioned on the low-refractive-index layer (240). A filling layer (290) may be positioned on the first capping layer (250). The filling layer (290) is positioned between the display panel and the color conversion panel when the display panel and the color conversion panel are bonded together.

[0135] Next, referring to FIG. 14, a display device according to one embodiment is described as follows.

[0136] Since the display device according to the embodiment illustrated in FIG. 14 has a substantial number of parts identical to the display device according to the embodiments illustrated in FIG. 1 to 3, the description of the identical parts is omitted. This embodiment differs from the previous embodiments in that the display device includes a single substrate and the display panel and the color conversion panel are formed as a single unit, which will be explained further below.

[0137] FIG. 14 is a cross-sectional view showing a display device according to one embodiment.

[0138] As illustrated in FIG. 14, a display device according to one embodiment includes one substrate (110).

[0139] In the preceding embodiment, a thin-film transistor and a light-emitting element are formed on one substrate, and a color filter and a color conversion layer are formed on another substrate, and then the two substrates are bonded together to form a display device. In the present embodiment, a thin-film transistor (TFT) and a light-emitting element (ED) are formed on one substrate (110), and a first color conversion layer (520a), a second color conversion layer (520b), and a transmission layer (520c) are formed on the light-emitting element (ED), and then a first color filter (230a), a second color filter (230b), and a third color filter (230c) are formed. That is, in the preceding embodiment, a display panel and a color conversion panel are formed separately and combined to manufacture a display device, whereas in the present embodiment, the display panel and the color conversion panel are integrated to manufacture a display device. Therefore, costs can be reduced and the process can be simplified.

[0140] A thin-film transistor (TFT) and a light-emitting element (ED) connected thereto may be located on the substrate (110). A filling layer (290) may be located on the light-emitting element (ED).

[0141] A first color conversion layer (520a), a second color conversion layer (520b), and a transparent layer (520c) may be located on the filling layer (290). The first color conversion layer (520a) may overlap with the light-emitting element (ED) of the first pixel (PX1), the second color conversion layer (520b) may overlap with the light-emitting element (ED) of the second pixel (PX2), and the transparent layer (520c) may overlap with the light-emitting element (ED) of the third pixel (PX3).

[0142] The first color conversion layer (520a), the second color conversion layer (520b), and the transmission layer (520c) may be located within a plurality of spaces (510) covered by a roof layer (260). A partition wall (265) may be located between adjacent roof layers (260). A second capping layer (280) may be located on the roof layer (260) and the partition wall (265).

[0143] A low-refractive-index layer (240) may be located on the second capping layer (280). A first capping layer (250) may be located on the low-refractive-index layer (240).

[0144] A first color filter (230a), a second color filter (230b), and a third color filter (230c) may be positioned on the first capping layer (250). The first color filter (230a) may overlap with the first color conversion layer (520a) and the light-emitting element (ED) of the first pixel (PX1). The second color filter (230b) may overlap with the second color conversion layer (520b) and the light-emitting element (ED) of the second pixel (PX2). The third color filter (230c) may overlap with the transmission layer (520c) and the light-emitting element (ED) of the third pixel (PX3).

[0145] A sealing layer (400) may be positioned over the first color filter (230a), the second color filter (230b), and the third color filter (230c). The sealing layer (400) may include a first inorganic sealing layer (410), an organic sealing layer (420), and a second inorganic sealing layer (430).

[0146] In the preceding embodiment, the widths of the first color conversion layer (520a), the second color conversion layer (520b), and the transmission layer (520c) may gradually decrease as they move away from the first color filter (230a), the second color filter (230b), and the third color filter (230c). The widths of the first color conversion layer (520a), the second color conversion layer (520b), and the transmission layer (520c) may gradually increase as they move away from the light-emitting element (ED). Conversely, in the present embodiment, the widths of the first color conversion layer (520a), the second color conversion layer (520b), and the transmission layer (520c) may gradually increase as they move away from the first color filter (230a), the second color filter (230b), and the third color filter (230c). The widths of the first color conversion layer (520a), the second color conversion layer (520b), and the transmission layer (520c) can gradually decrease as they move further away from the light-emitting element (ED).

[0147] Next, referring to FIG. 15, a display device according to one embodiment is described as follows.

[0148] Since the display device according to the embodiment illustrated in FIG. 15 has a substantial number of identical parts to the display device according to the embodiments illustrated in FIG. 1 to 3, the description of the identical parts is omitted. This embodiment differs from the preceding embodiment in that the roof layer includes a plurality of layers, which will be explained further below.

[0149] FIG. 15 is a cross-sectional view showing a part of a display device according to one embodiment. FIG. 15 illustrates a color conversion panel of a display device according to one embodiment.

[0150] A display device according to one embodiment may include a display panel and a color conversion panel, similar to the preceding embodiment.

[0151] As illustrated in FIG. 15, a color conversion panel of a display device according to one embodiment may include a substrate (210), a first color filter (230a), a second color filter (230b), and a third color filter (230c) located on the substrate (210). A first color conversion layer (520a), a second color conversion layer (520b), and a transmission layer (520c) may be located on the first color filter (230a), the second color filter (230b), and the third color filter (230c).

[0152] The first color conversion layer (520a) may overlap with the first color filter (230a), the second color conversion layer (520b) may overlap with the second color filter (230b), and the transmission layer (520c) may overlap with the third color filter (230c). Although it is illustrated that the first color conversion layer (520a) is located directly above the first color filter (230a), the second color conversion layer (520b) is located directly above the second color filter (230b), and the transmission layer (520c) is located directly above the third color filter (230c), it is not limited thereto. An insulating layer may be located on the first color filter (230a), the second color filter (230b), and the third color filter (230c), and the first color conversion layer (520a), the second color conversion layer (520b), and the transmission layer (520c) may be located on the insulating layer. That is, an insulating layer may be located between the first color filter (230a) and the first color conversion layer (520a), an insulating layer may be located between the second color filter (230b) and the second color conversion layer (520b), and an insulating layer may be located between the third color filter (230c) and the transmission layer (520c).

[0153] The first color conversion layer (520a), the second color conversion layer (520b), and the transmission layer (520c) can each be located within a plurality of spaces (510) covered by the roof layer (260).

[0154] In this embodiment, the roof layer (260) may include a first roof layer (262), a second roof layer (264), and a third roof layer (266). The first roof layer (262) may be made of an inorganic material, the second roof layer (264) may be made of an organic material, and the third roof layer (266) may be made of an inorganic material. The second roof layer (264) may be located between the first roof layer (262) and the third roof layer (266). However, this is merely an example, and the number of inorganic and organic films constituting the roof layer (260) may vary. Additionally, the second roof layer (264) may include an organic material with a low refractive index. For example, the refractive index of the second roof layer (264) may be about 1.1 or higher and about 1.3 or lower. Therefore, the second roof layer (264) may take the place of the low refractive index layer in the preceding embodiment.

[0155] A partition wall (265) may be located between adjacent multiple roof layers (260). A second capping layer (280) may be located on the roof layers (260) and the partition wall (265).

[0156] A filling layer (290) may be positioned on the second capping layer (280). The filling layer (290) is positioned between the display panel and the color conversion panel when the display panel and the color conversion panel are bonded together.

[0157] Next, a display device according to one embodiment will be described with reference to FIGS. 16 and FIGS. 17 as follows.

[0158] Since the display device according to the embodiment illustrated in FIGS. 16 and 17 has a substantial number of parts identical to the display device according to the embodiment illustrated in FIGS. 1 to 3, the description of the identical parts is omitted. This embodiment differs from the preceding embodiment in that the partition wall is omitted, which will be explained further below.

[0159] FIG. 16 is a cross-sectional view showing a part of a display device according to one embodiment. FIG. 16 illustrates a color conversion panel of a display device according to one embodiment. FIG. 17 is a plan view showing a part of a display device according to one embodiment. FIG. 17 shows a low refractive index layer of a display device according to one embodiment.

[0160] A display device according to one embodiment may include a display panel and a color conversion panel, similar to the preceding embodiment.

[0161] As illustrated in FIG. 16, a color conversion panel of a display device according to one embodiment may include a substrate (210), a first color filter (230a), a second color filter (230b), and a third color filter (230c) located on the substrate (210). A first color conversion layer (520a), a second color conversion layer (520b), and a transmission layer (520c) may be located on the first color filter (230a), the second color filter (230b), and the third color filter (230c).

[0162] The first color conversion layer (520a) may overlap with the first color filter (230a), the second color conversion layer (520b) may overlap with the second color filter (230b), and the transmission layer (520c) may overlap with the third color filter (230c). Although it is illustrated that the first color conversion layer (520a) is located directly above the first color filter (230a), the second color conversion layer (520b) is located directly above the second color filter (230b), and the transmission layer (520c) is located directly above the third color filter (230c), it is not limited thereto. An insulating layer may be located on the first color filter (230a), the second color filter (230b), and the third color filter (230c), and the first color conversion layer (520a), the second color conversion layer (520b), and the transmission layer (520c) may be located on the insulating layer. That is, an insulating layer may be located between the first color filter (230a) and the first color conversion layer (520a), an insulating layer may be located between the second color filter (230b) and the second color conversion layer (520b), and an insulating layer may be located between the third color filter (230c) and the transmission layer (520c).

[0163] The first color conversion layer (520a), the second color conversion layer (520b), and the transmission layer (520c) can each be located within a plurality of spaces (510) covered by the roof layer (260).

[0164] In the preceding embodiment, a partition wall may be located between adjacent multiple roof layers (260), and in this embodiment, such a partition wall may be omitted.

[0165] A low refractive index layer (240) may be positioned on the roof layer (260). The low refractive index layer (240) may overlap with the first color conversion layer (520a), the second color conversion layer (520b), and the transmission layer (520c). Additionally, the low refractive index layer (240) may be positioned between a plurality of adjacent roof layers (260) and may serve as a substitute for the partition wall in the preceding embodiment. As illustrated in FIG. 17, the low refractive index layer (240) may be formed between adjacent roof layers (260) in a first direction (D1). The low refractive index layer (240) may be extended along a second direction (D2) perpendicular to the first direction (D1). The upper surface of the low refractive index layer (240) may be made hydrophobic. The low refractive index layer (240) can be patterned so as not to be formed between adjacent roof layers (260) in the second direction (D2). That is, the low refractive index layer (240) can be patterned so as not to cover the portion where the injection port (261) is formed.

[0166] A first capping layer (250) may be positioned on the low refractive index layer (240). The first capping layer (250) may be patterned to have the same planar shape as the low refractive index layer (240).

[0167] After forming the low refractive index layer (240) and the first capping layer (250), ink (540a, 540b, 540c) can be dropped. The ink (540a, 540b, 540c) can be injected into the space (510) through the injection port (261).

[0168] A second capping layer (280) may be positioned on top of the first capping layer (250). The second capping layer (280) may be formed to cover the injection port (261).

[0169] A filling layer (290) may be positioned on the second capping layer (280). The filling layer (290) is positioned between the display panel and the color conversion panel when the display panel and the color conversion panel are bonded together.

[0170] Although embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements by those skilled in the art using the basic concept of the present invention as defined in the following claims also fall within the scope of the present invention. Explanation of the symbols

[0171] 110, 210: Substrate 230a: 1st color filter 230b: Second color filter 230c: Third color filter 240: Low refractive index layer 260: Roof level 265: Bulkhead 280: Second capping layer 290: Packing layer 400: Bag layer 500: Sacrifice layer 510: Space 520a: First color conversion layer 520b: Second color conversion layer 520c: Transmissive layer 521a: First quantum dot 521b: Second quantum dot 530: Spawner ED: Light-emitting element

Claims

Claim 1 A display device comprising: a first substrate; a first color filter, a second color filter, and a third color filter located on the first substrate; a first color conversion layer, a second color conversion layer, and a transmission layer located on the first color filter, the second color filter, and the third color filter; a plurality of roof layers located on the first color conversion layer, the second color conversion layer, and the transmission layer; and a capping layer located on the roof layers, wherein a plurality of spaces are partitioned below the plurality of roof layers by the plurality of roof layers, the first color conversion layer is located within the space and overlaps with the first color filter, the second color conversion layer is located within the space and overlaps with the second color filter, the transmission layer is located within the space and overlaps with the third color filter, and the capping layer is located spaced apart from the first color conversion layer, the second color conversion layer, and the transmission layer. Claim 2 A display device according to claim 1, wherein the first color conversion layer comprises a plurality of first quantum dots and a plurality of scatterers, the second color conversion layer comprises a plurality of second quantum dots and a plurality of scatterers, and the transmission layer comprises a plurality of scatterers. Claim 3 In claim 1, the device further comprises a partition wall located between the plurality of roof layers, and the capping layer is a display device located on the partition wall. Claim 4 In paragraph 3, the upper surface of the above partition is a hydrophobic display device. Claim 5 A display device according to claim 1, further comprising a low-refractive-index layer positioned above the first color filter, the second color filter, and the third color filter, wherein the low-refractive-index layer is positioned between the first color filter and the first color conversion layer, between the second color filter and the second color conversion layer, and between the third color filter and the transmission layer. Claim 6 A display device according to claim 1, further comprising a first color conversion layer, a second color conversion layer, and a low refractive index layer located above the transmission layer, wherein the first color conversion layer is located between the first color filter and the low refractive index layer, the second color conversion layer is located between the second color filter and the low refractive index layer, and the transmission layer is located between the third color filter and the low refractive index layer. Claim 7 A display device according to claim 1, further comprising a second substrate including a first pixel, a second pixel, and a third pixel, and a plurality of light-emitting elements each positioned on the first pixel, the second pixel, and the third pixel of the second substrate, wherein the light-emitting element positioned on the first pixel overlaps with the first color filter and the first color conversion layer, the light-emitting element positioned on the second pixel overlaps with the second color filter and the second color conversion layer, and the light-emitting element positioned on the third pixel overlaps with the third color filter and the transmission layer. Claim 8 A display device according to claim 1, wherein the first substrate comprises a first pixel, a second pixel, and a third pixel, and further comprises a plurality of light-emitting elements each positioned on the first pixel, the second pixel, and the third pixel of the first substrate, wherein the light-emitting element positioned on the first pixel is positioned between the first substrate and the first color conversion layer and overlaps with the first color filter and the first color conversion layer, the light-emitting element positioned on the second pixel is positioned between the first substrate and the second color conversion layer and overlaps with the second color filter and the second color conversion layer, and the light-emitting element positioned on the third pixel is positioned between the first substrate and the transmission layer and overlaps with the third color filter and the transmission layer. Claim 9 A display device according to claim 1, wherein the roof layer comprises a first roof layer made of an inorganic material, a second roof layer located above the first roof layer and made of an organic material, and a third roof layer located above the second roof layer and made of an inorganic material. Claim 10 A display device according to claim 1, further comprising a filling layer located above the capping layer. Claim 11 A method for manufacturing a display device comprising the steps of: forming a first color filter, a second color filter, and a third color filter on a first substrate; forming a sacrificial layer on each of the first color filter, the second color filter, and the third color filter; forming a roof layer on the sacrificial layer; removing the sacrificial layer to form a space covered by the roof layer; injecting ink into the space to form a first color conversion layer, a second color conversion layer, and a transmission layer; and forming a capping layer on the roof layer. Claim 12 A method for manufacturing a display device according to claim 11, wherein the first color conversion layer comprises a plurality of first quantum dots and a plurality of scatterers, the second color conversion layer comprises a plurality of second quantum dots and a plurality of scatterers, and the transmission layer comprises a plurality of scatterers. Claim 13 A method for manufacturing a display device according to claim 12, further comprising the step of forming a partition between the plurality of roof layers, and removing the sacrificial layer in the process of forming the partition. Claim 14 A method for manufacturing a display device according to claim 13, wherein the sacrificial layer is made of a positive photoresist and the partition is made of a negative photoresist. Claim 15 A method for manufacturing a display device according to claim 11, further comprising the step of forming a low-refractive-index layer on the first color filter, the second color filter, and the third color filter, wherein the low-refractive-index layer is located between the first color filter and the first color conversion layer, between the second color filter and the second color conversion layer, and between the third color filter and the transmission layer. Claim 16 A method for manufacturing a display device according to claim 11, further comprising the step of forming a low-refractive-index layer on the first color conversion layer, the second color conversion layer, and the transmission layer, wherein the first color conversion layer is located between the first color filter and the low-refractive-index layer, the second color conversion layer is located between the second color filter and the low-refractive-index layer, and the transmission layer is located between the third color filter and the low-refractive-index layer. Claim 17 A method for manufacturing a display device according to claim 11, further comprising the steps of forming a plurality of light-emitting elements on a second substrate, and aligning the first substrate and the second substrate so as to face each other and then bonding them together. Claim 18 A method for manufacturing a display device according to claim 11, further comprising the step of forming a plurality of light-emitting elements on the first substrate, and sequentially proceeding with the steps of forming the sacrificial layer on the plurality of light-emitting elements, forming the roof layer, forming the space, forming the first color conversion layer, the second color conversion layer, and the transparent layer, and forming the capping layer, and then proceeding with the step of forming the first color filter, the second color filter, and the third color filter on the first color conversion layer, the second color conversion layer, and the transparent layer. Claim 19 A method for manufacturing a display device according to claim 11, wherein the step of forming the roof layer comprises the step of forming a first roof layer made of an inorganic material, the step of forming a second roof layer made of an organic material on the first roof layer, and the step of forming a third roof layer made of an inorganic material on the second roof layer. Claim 20 A method for manufacturing a display device according to claim 11, further comprising the step of forming a filling layer located on the capping layer.

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