Substrate for transfer of semiconductor light emitting devices

Abstract

A transfer substrate for a semiconductor light-emitting element according to an embodiment comprises: a substrate; a plurality of assembly lines disposed on the substrate; a first assembly hole disposed on the plurality of assembly lines in which a first semiconductor light-emitting element is assembled and a second assembly hole in which a second semiconductor light-emitting element is assembled; and a first dielectric layer disposed within the first assembly hole and a second dielectric layer disposed within the second assembly hole; wherein the thickness of the first dielectric layer may be different from the thickness of the second dielectric layer.

Description

Technology Field

[0001] The embodiment relates to a transfer substrate for a semiconductor light-emitting device. Background Technology

[0002] Large-area displays include liquid crystal displays (LCD), OLED displays, and micro-LED displays.

[0003] A micro-LED display is a display that uses a micro-LED, which is a semiconductor light-emitting element having a diameter or cross-sectional area of ​​100 μm or less, as a display element.

[0004] Because micro-LED displays use micro-LEDs, which are semiconductor light-emitting devices, as display elements, they possess excellent performance in many characteristics such as contrast ratio, response speed, color reproduction rate, viewing angle, brightness, resolution, lifespan, luminous efficiency, and luminance.

[0005] In particular, micro-LED displays have the advantage of being able to freely adjust size or resolution by separating and combining screens in a modular manner, and also have the advantage of enabling the implementation of flexible displays.

[0007] However, since large micro-LED displays require millions of micro-LEDs, there is a technical challenge in rapidly and accurately transferring the micro-LEDs to the display panel.

[0008] Recently developed transfer technologies include the pick-and-place process, the laser lift-off method, and the self-assembly method.

[0009] Among these, the self-assembly method is a technique in which semiconductor light-emitting elements autonomously find their assembly positions within a fluid, making it advantageous for the implementation of large-screen display devices.

[0010] Recently, U.S. Patent No. 9,825,202 presented a micro-LED structure suitable for self-assembly, but research on the technology for manufacturing displays through the self-assembly of micro-LEDs is still insufficient.

[0011] In particular, in conventional technology, when rapidly transferring millions of semiconductor light-emitting elements onto a large display, while the transfer speed can be improved, there is a technical problem in that the transfer error rate may increase, resulting in a low transfer yield.

[0012] Meanwhile, in related technologies, a self-assembly transfer process using dielectrophoresis (DEP) is being attempted, but there is a problem with a low self-assembly rate due to factors such as the non-uniformity of the DEP force.

[0013] Meanwhile, when transferring R, G, and B color semiconductor light-emitting diodes onto a substrate, separate assembly wiring is required for each color; consequently, achieving high resolution becomes difficult due to the electrode area, and short circuits between electrodes occur due to the complex electrode arrangement. Additionally, there was a problem in that it was difficult to achieve high resolution due to the area of ​​the assembly wiring. The problem to be solved

[0014] One of the technical challenges of the embodiment is to implement high resolution in the display device.

[0015] In addition, one of the technical challenges of the embodiment is to implement simultaneous self-assembly regardless of the color and size of the semiconductor light-emitting device.

[0016] In addition, one of the technical challenges of the embodiment is to improve the degree of freedom of color arrangement of the semiconductor light-emitting element.

[0017] In addition, one of the technical challenges of the embodiment is to reduce the number of assembly wires to prevent short circuits and defects in the wiring.

[0018] In addition, one of the technical challenges of the embodiment is to simplify the assembly wiring process.

[0019] The technical problems of the embodiments are not limited to those described in this section and include those that can be identified through the description of the invention. means of solving the problem

[0020] A transfer substrate for a semiconductor light-emitting element according to an embodiment comprises: a substrate; a plurality of assembly lines disposed on the substrate; a first assembly hole disposed on the plurality of assembly lines in which a first semiconductor light-emitting element is assembled and a second assembly hole in which a second semiconductor light-emitting element is assembled; and a first dielectric layer disposed within the first assembly hole and a second dielectric layer disposed within the second assembly hole; wherein the thickness of the first dielectric layer may be different from the thickness of the second dielectric layer.

[0021] In addition, in the embodiment, the diameter of the first semiconductor light-emitting element is larger than the diameter of the second semiconductor light-emitting element, and the thickness of the first dielectric layer may be larger than the thickness of the second dielectric layer.

[0022] In addition, in the embodiment, the diameter of the first assembly hole may be larger than the diameter of the second assembly hole.

[0023] Additionally, in the embodiment, the first assembly wiring and the second-1 assembly wiring are disposed below the first assembly hole, and the second-2 assembly wiring and the third assembly wiring are disposed below the second assembly hole, and the second-1 assembly wiring and the second-2 assembly wiring may be formed integrally.

[0024] In addition, in the embodiment, the first assembly wiring and the third assembly wiring may be formed integrally.

[0025] Additionally, in the embodiment, the apparatus further includes a third assembly hole disposed on the plurality of assembly wires and in which a third semiconductor light-emitting element is assembled, and includes a third dielectric layer disposed within the third assembly hole, wherein the thickness of the second dielectric layer may be greater than the thickness of the third dielectric layer.

[0026] In addition, in the embodiment, the first semiconductor light-emitting element, the second semiconductor light-emitting element, and the third semiconductor light-emitting element emit different colors and can be assembled simultaneously.

[0027] In addition, in the embodiment, the area of ​​the first dielectric layer may be larger than the area of ​​the second dielectric layer.

[0028] In addition, in the embodiment, the thickness of the first dielectric layer is greater than the thickness of the second dielectric layer, and

[0029] The assembly voltage applied to the second assembly hole may be greater than the assembly voltage applied to the first assembly hole.

[0030] Additionally, in the embodiment, the dielectric layer may include an oxide film comprising at least one of Si, Al, Sn, Ti, Zn, Ba, Y, and Ta. Effects of the invention

[0031] The transfer substrate for a semiconductor light-emitting device according to the embodiment has the technical effect of enabling the simultaneous assembly of semiconductor light-emitting devices emitting R, G, and B colors.

[0032] For example, in the embodiment, the thickness of the dielectric layer is arranged differently for each assembly hole in the same assembly wiring, and by controlling the assembly voltage of each assembly hole, semiconductor light-emitting devices of different colors and sizes can be assembled simultaneously.

[0033] In addition, the embodiment has the technical effect of minimizing the area of ​​assembly wiring on a transfer substrate and improving the placement area of ​​semiconductor light-emitting devices, thereby enabling high resolution.

[0034] For example, since the embodiment controls the assembly voltage through the thickness of the dielectric layer, the same assembly wiring can be used in adjacent assembly sections, thereby reducing the number of assembly wirings and, accordingly, improving the placement area of ​​the semiconductor light-emitting device.

[0035] In addition, the embodiment has the technical effect of preventing signal interference and electrical short circuits between assembled wirings.

[0036] For example, the embodiment uses shared assembly wiring to reduce the number of assembly wirings and prevents signal interference and electrical short circuits because the assembly wirings are not adjacent.

[0037] In addition, the embodiment has the technical effect of improving the degree of freedom in the arrangement of semiconductor light-emitting devices that emit R, G, and B colors.

[0038] For example, the embodiment can improve the degree of freedom of color-by-color arrangement by forming assembly holes in the transfer substrate according to the color-by-color arrangement of the semiconductor light-emitting element.

[0039] In addition, the embodiment has the technical effect of preventing transfer defects in semiconductor light-emitting devices and improving the transfer rate.

[0040] For example, the embodiment can prevent assembly defects in which the chip is double-assembled or unassembled through a difference in the thickness of the dielectric layer along with a difference in the size of the assembly hole.

[0041] The technical effects of the embodiments are not limited to those described in this section and include those that can be understood through the description of the invention. Brief explanation of the drawing

[0042] FIG. 1 is an exemplary diagram of a living room of a house in which a display device according to an embodiment is placed. FIG. 2 is an enlarged view of the first panel area of ​​the display device of FIG. 1. FIG. 3 is a cross-sectional view along the line B1-B2 in area A2 of FIG. 2. FIG. 4 is an example diagram showing a light-emitting element according to an embodiment being assembled on a substrate by a self-assembly method. Fig. 5 is a transfer substrate for a semiconductor light-emitting device being studied internally. FIG. 6 is a cross-sectional view of a transfer substrate of a semiconductor light-emitting device according to a first embodiment. FIG. 7 is a side view of a transfer substrate of the semiconductor light-emitting device of FIG. 6. FIG. 8 is a plan view of a transfer substrate of the semiconductor light-emitting device of FIG. 6. FIG. 9 is a plan view of a transfer substrate of a semiconductor light-emitting device according to a second embodiment. FIG. 10 is a plan view of a transfer substrate of a semiconductor light-emitting device according to a third embodiment. FIG. 11 is a plan view of a transfer substrate of a semiconductor light-emitting device according to a fourth embodiment. Specific details for implementing the invention

[0043] Hereinafter, embodiments disclosed in this specification will be described in detail with reference to the attached drawings. The suffixes 'module' and 'part' for components used in the following description are assigned or used interchangeably for the sake of ease of drafting the specification and do not inherently possess distinct meanings or roles. Furthermore, the attached drawings are intended to facilitate an easy understanding of the embodiments disclosed in this specification, and the technical concepts disclosed in this specification are not limited by the attached drawings. Additionally, when an element such as a layer, region, or substrate is referred to as existing 'on' another component, this includes existing directly on the other element or having other intermediate elements existing between them.

[0044] The display devices described in this specification may include digital TVs, mobile phones, smartphones, laptop computers, digital broadcasting terminals, PDAs (personal digital assistants), PMPs (portable multimedia players), navigation systems, Slate PCs, Tablet PCs, Ultra-Books, desktop computers, etc. However, the configurations according to the embodiments described in this specification may be applied to devices capable of display, even if they are new product forms developed in the future.

[0046] A light-emitting element according to the following embodiments and a display device including the same will be described.

[0047] FIG. 1 illustrates a living room of a house in which a display device (100) according to an embodiment is placed.

[0048] The display device (100) of the embodiment can display the status of various electronic products such as a washing machine (101), a robot vacuum cleaner (102), and an air purifier (103), communicate with each electronic product based on IoT, and control each electronic product based on user setting data.

[0049] The display device (100) according to the embodiment may include a flexible display fabricated on a thin and flexible substrate. The flexible display can be bent or rolled like paper while maintaining the characteristics of a conventional flat panel display.

[0050] In a flexible display, visual information can be realized by independently controlling the light emission of unit pixels arranged in a matrix form. A unit pixel refers to the smallest unit for realizing a single color. The unit pixels of a flexible display can be realized by a light-emitting element. In the embodiments, the light-emitting element may be a Micro-LED or a Nano-LED, but is not limited thereto.

[0052] Figure 2 is an enlarged view of the first panel area (A1) of the display device of Figure 1.

[0053] According to FIG. 2, the display device (100) of the embodiment can be manufactured by mechanically and electrically connecting a plurality of panel regions, such as a first panel region (A1), by tiling.

[0054] The first panel area (A1) may include a plurality of light-emitting elements (150) arranged for each unit pixel (PX in FIG. 2).

[0055] For example, a unit pixel (PX) may include a first sub-pixel (PX1), a second sub-pixel (PX2), and a third sub-pixel (PX3). For example, a plurality of red light-emitting elements (150R) may be placed in the first sub-pixel (PX1), a plurality of green light-emitting elements (150G) may be placed in the second sub-pixel (PX2), and a plurality of blue light-emitting elements (150B) may be placed in the third sub-pixel (PX3). The unit pixel (PX) may further include a fourth sub-pixel in which no light-emitting elements are placed, but is not limited thereto. Meanwhile, the light-emitting element (150) may be a semiconductor light-emitting element.

[0057] Next, Fig. 3 is a cross-sectional view along the line B1-B2 in area A2 of Fig. 2.

[0058] Referring to FIG. 3, the display device (100) of the embodiment may include a substrate (200), assembly wiring (201, 202), a first insulating layer (211a), a second insulating layer (211b), a third insulating layer (206), and a plurality of light-emitting elements (150).

[0059] The assembly wiring may include a first assembly wiring (201) and a second assembly wiring (202) spaced apart from each other. The first assembly wiring (201) and the second assembly wiring (202) may be provided to generate a dielectrophoretic force to assemble a light-emitting element (150). Additionally, the first assembly wiring (201) and the second assembly wiring (202) may be electrically connected to the electrodes of the light-emitting element and function as electrodes of a display panel.

[0060] The assembled wiring (201, 202) may be formed of a transparent electrode (ITO) or may include a metallic material with excellent electrical conductivity. For example, the assembled wiring (201, 202) may be formed of at least one of titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), molybdenum (Mo), or an alloy thereof.

[0061] A first insulating layer (211a) may be disposed between the first assembled wiring (201) and the second assembled wiring (202), and a second insulating layer (211b) may be disposed on the first assembled wiring (201) and the second assembled wiring (202). The first insulating layer (211a) and the second insulating layer (211b) may be oxide films, nitride films, etc., but are not limited thereto.

[0063] The light-emitting element (150) may include a red light-emitting element (150), a green light-emitting element (150G), and a blue light-emitting element (150B0) to form a unit pixel (sub-pixel), but is not limited thereto, and may also implement red and green by providing a red phosphor and a green phosphor, etc.

[0064] The substrate (200) may be formed of glass or polyimide. Additionally, the substrate (200) may include flexible materials such as PEN (Polyethylene Naphthalate) or PET (Polyethylene Terephthalate). Furthermore, the substrate (200) may be a transparent material, but is not limited thereto.

[0065] The third insulating layer (206) may include a material with insulating and flexible properties such as polyimide, PEN, PET, etc., and may be formed integrally with the substrate (200) to form a single substrate.

[0066] The third insulating layer (206) may be a conductive adhesive layer having adhesiveness and conductivity, and the conductive adhesive layer may be flexible to enable the flexible function of the display device. For example, the third insulating layer (206) may be an anisotropy conductive film (ACF), an anisotropy conductive medium, a solution containing conductive particles, etc. The conductive adhesive layer may be a layer that is electrically conductive in the direction perpendicular to the thickness, but electrically insulating in the direction horizontal to the thickness.

[0067] The third insulating layer (206) may include an assembly hole (203) into which a light-emitting element (150) is inserted (see FIG. 6). Accordingly, when self-assembling, the light-emitting element (150) can be easily inserted into the assembly hole (203) of the third insulating layer (206). The assembly hole (203) may be called an insertion hole, a fixing hole, an alignment hole, etc.

[0068] The gap between the assembly wiring (201, 202) is formed to be smaller than the width of the light-emitting element (150) and the width of the assembly hole (203), so that the assembly position of the light-emitting element (150) using an electric field can be fixed more precisely.

[0069] A third insulating layer (206) is formed on the assembled wiring (201, 202) to protect the assembled wiring (201, 202) from fluid (1200) and prevent leakage of current flowing through the assembled wiring (201, 202). The third insulating layer (206) may be formed as a single layer or multiple layers of an inorganic insulator such as silica or alumina, or an organic insulator.

[0070] Additionally, the third insulating layer (206) may include a material with insulating and flexible properties such as polyimide, PEN, PET, etc., and may be formed integrally with the substrate (200) to form a single substrate.

[0071] The third insulating layer (206) may be an insulating layer that is adhesive or a conductive adhesive layer that is conductive. The third insulating layer (206) may be flexible so that it can enable the flexible function of the display device.

[0072] The third insulating layer (206) has a partition, and an assembly hole (203) can be formed by this partition. For example, when forming the substrate (200), a portion of the third insulating layer (206) is removed so that each of the light-emitting elements (150) can be assembled in the assembly hole (203) of the third insulating layer (206).

[0073] An assembly hole (203) is formed in the substrate (200) to which light-emitting elements (150) are joined, and the surface on which the assembly hole (203) is formed can come into contact with a fluid (1200). The assembly hole (203) can guide the precise assembly position of the light-emitting elements (150).

[0074] Meanwhile, the assembly hole (203) may have a shape and size corresponding to the shape of the light-emitting element (150) to be assembled at the corresponding location. Accordingly, it is possible to prevent other light-emitting elements from being assembled in the assembly hole (203) or multiple light-emitting elements from being assembled.

[0076] FIG. 4 is a drawing showing an example in which a light-emitting element according to an embodiment is assembled on a substrate by a self-assembly method, and the self-assembly method of the light-emitting element is explained with reference to the drawings.

[0077] The substrate (200) may be a panel substrate of a display device. In the following description, the substrate (200) is described as being a panel substrate of a display device, but the embodiment is not limited thereto.

[0078] Referring to FIG. 4, a plurality of light-emitting elements (150) can be introduced into a chamber (1300) filled with a fluid (1200). The fluid (1200) may be water, such as ultrapure water, but is not limited thereto. The chamber may be called a water tank, a container, a vessel, etc.

[0079] After this, the substrate (200) can be placed on the chamber (1300). According to an embodiment, the substrate (200) may be introduced into the chamber (1300).

[0080] As illustrated in FIG. 3, a pair of assembly wires (201, 202) corresponding to each of the light-emitting elements (150) to be assembled may be disposed on the substrate (200).

[0081] Referring to FIG. 4, after the substrate (200) is placed, an assembly device (1100) including a magnetic material can move along the substrate (200). For example, a magnet or an electromagnet may be used as the magnetic material. The assembly device (1100) can move while in contact with the substrate (200) to maximize the area where the magnetic field is applied within the fluid (1200). According to an embodiment, the assembly device (1100) may include a plurality of magnetic materials or a magnetic material of a size corresponding to that of the substrate (200). In this case, the movement distance of the assembly device (1100) may be limited to within a predetermined range.

[0082] Due to the magnetic field generated by the assembly device (1100), the light-emitting element (150) inside the chamber (1300) can move toward the assembly device (1100).

[0083] While moving toward the assembly device (1100), the light-emitting element (150) can enter the assembly hole (203) by means of a dielectrophoretic force (DEP force) and come into contact with the substrate (200).

[0084] Specifically, the assembly wiring (201, 202) forms an electric field by an externally supplied power source, and a dielectrophoretic force can be formed between the assembly wiring (201, 202) by this electric field. By this dielectrophoretic force, a light-emitting element (150) can be fixed to an assembly hole (203) on a substrate (200).

[0085] By means of an electric field applied by assembly wiring (201, 202) formed on the substrate (200), the light-emitting element (150) in contact with the substrate (200) can be prevented from being detached by the movement of the assembly device (1100). According to the embodiment, by the self-assembly method using the electromagnetic field described above, the time required for each light-emitting element (150) to be assembled on the substrate (200) can be drastically shortened, so a large-area high-pixel display can be implemented more quickly and economically.

[0086] At this time, a predetermined solder layer (not shown) is formed between the light-emitting element (150) assembled on the assembly hole (203) of the substrate (200) and the assembly electrode, thereby improving the bonding strength of the light-emitting element (150).

[0087] Next, a molding layer (not shown) may be formed in the assembly hole (203) of the substrate (200). The molding layer may be a transparent resin or a resin containing a reflective material or a scattering material.

[0089] Figure 5 is a conceptual diagram of a transfer substrate for a semiconductor light-emitting device being studied internally. In a single-color transfer substrate, since all chips are identical, a single common electrode is used, and the process of forming assembly wiring is relatively simple. However, in an RGB chip transfer substrate that is not single-color, the assembly voltage of each chip is different for the R, G, and B chips, and an assembly wiring electrode corresponding to the size of the chip is required.

[0090] Referring to FIG. 5, the internally studied display panel may include a first assembly part (22) in which a first semiconductor light-emitting element (52) is assembled, a second assembly part (24) in which a second semiconductor light-emitting element (54) is assembled, and a third assembly part (26) in which a third semiconductor light-emitting element (56) is assembled.

[0091] At this time, the diameter of the first semiconductor light-emitting element (52) may be larger than the diameter of the second semiconductor light-emitting element (54). Also, the diameter of the second semiconductor light-emitting element (54) may be larger than the diameter of the third semiconductor light-emitting element (56). The spacing between the first assembly wiring (42), the second assembly wiring (44), and the third assembly wiring (46) may differ according to the size of each chip, and different electrode structures corresponding to the color are required.

[0092] Accordingly, electrode structures corresponding to each RGB color are required in the display panel. Since semiconductor light-emitting elements of different colors cannot be simultaneously assembled on the same line, there are problems such as increased assembly process time and reduced design freedom. Furthermore, because paired assembly wiring is required for each color line, the area occupied by assembly wiring in the display panel increases, making it difficult to achieve high resolution.

[0094] Below, an example for solving the above problem will be described.

[0095] FIG. 6 is a cross-sectional view of a transfer substrate of a semiconductor light-emitting device according to a first embodiment.

[0096] Referring to FIG. 6, a partition (170) is disposed on a panel substrate (110), and the partition (170) may have a plurality of assembly holes (162H, 164H, 166H) in which semiconductor light-emitting elements are assembled. The size of each of the plurality of assembly holes (162H, 164H, 166H) may be different. The height of the plurality of assembly holes (162H, 164H, 166H) may be the same.

[0097] In the embodiment, the first semiconductor light-emitting element (152) can be assembled in the first assembly hole (162H). The second semiconductor light-emitting element (154) can be assembled in the second assembly hole (164H). The third semiconductor light-emitting element (156) can be assembled in the third assembly hole (166H).

[0098] The diameter of the first assembly hole (162H) may be larger than that of the second assembly hole (164H). Additionally, the diameter of the second assembly hole (164H) may be larger than that of the third assembly hole (166H).

[0099] Additionally, the size of the first semiconductor light-emitting element (152) may be larger than the size of the second semiconductor light-emitting element (154). Additionally, the size of the second semiconductor light-emitting element (154) may be larger than the size of the third semiconductor light-emitting element (156). Furthermore, the first semiconductor light-emitting element (152) may emit a red color, the second semiconductor light-emitting element (154) may emit a green color, and the third semiconductor light-emitting element (156) may emit a blue color, but is not limited thereto.

[0100] Additionally, a plurality of assembly wires may be disposed on the substrate (110). The plurality of assembly wires may include a first assembly wire (131), a second assembly wire (133), and a third assembly wire (135). Additionally, a first clad electrode (132) may be disposed on the first assembly wire (131), a second clad electrode (134) may be disposed on the second assembly wire (133), and a third clad electrode (136) may be disposed on the third assembly wire (135). Additionally, the first, second, and third assembly wires (131, 133, 135) may be formed as a single unit. (See FIG. 8) A voltage of the same magnitude may be applied to the first, second, and third assembly wires (131, 133, 135).

[0101] In addition, a dielectric layer may be disposed on multiple assembled wirings.

[0102] Although the drawing shows the dielectric layer and the partition wall (170) overlapping, the dielectric layer may be formed after the assembly hole is formed. Additionally, the assembly hole may be formed after the dielectric layer is formed.

[0103] The dielectric layer may include a first dielectric layer (142) disposed on a first assembled wiring (131), a second dielectric layer (144) disposed on a second assembled wiring (133), and a third dielectric layer (146) disposed on a third assembled wiring (135). The thickness of the first dielectric layer (142) may be greater than the thickness of the second dielectric layer (144). Additionally, the thickness of the second dielectric layer (144) may be greater than the thickness of the third dielectric layer (146). The thickness of the dielectric layer may be smaller than the thickness of the partition wall (170).

[0104] Specifically, the thickness of the first dielectric layer (142) placed in the first assembly hole (162H) where the largest first semiconductor light-emitting element (152) among the first, second, and third semiconductor light-emitting elements (152, 154, 156) is assembled may be the largest.

[0105] The dielectric layer may be an oxide film comprising one or more of Si, Al, Sn, Ti, Zn, Ba, Y, and Ta, but is not limited thereto. Additionally, the thickness of the dielectric layer may be 20 to 200 nm, but is not limited thereto.

[0107] Meanwhile, the assembly voltage for assembling the first semiconductor light-emitting element (152) onto the substrate (110) may be smaller than the assembly voltage of the second semiconductor light-emitting element (154). Additionally, the assembly voltage of the second semiconductor light-emitting element (154) may be smaller than the assembly voltage of the third semiconductor light-emitting element (156). The larger the size of the semiconductor light-emitting element, the smaller the assembly voltage required for assembly may be.

[0108] Meanwhile, in the embodiment, the same voltage may be applied to the first assembly wiring (131), the second assembly wiring (133), and the third assembly wiring (135). On the other hand, even if the same voltage is applied to the assembly wiring, the assembly voltage applied to the semiconductor light-emitting element may differ depending on the thickness of the dielectric layer.

[0110] Accordingly, in the embodiment, since the thickness of the dielectric layer placed on the assembly wiring is different, even if the same voltage is applied to a plurality of assembly wirings, the assembly voltage applied to the first semiconductor light-emitting element (152), the second semiconductor light-emitting element (154), and the third semiconductor light-emitting element (156) may be different.

[0111] Accordingly, the embodiment has a special technical effect of enabling the simultaneous assembly of semiconductor light-emitting devices emitting different colors in the same assembly wiring by arranging dielectric layers having different thicknesses in a plurality of assembly hole regions.

[0113] FIG. 7a is a cross-sectional view of a transfer substrate for a semiconductor light-emitting device according to a second embodiment. The second embodiment may adopt the technical features of the first embodiment.

[0114] Referring to FIG. 7a, a first clad electrode (132) may be positioned to cover a first assembly wiring (131). Additionally, a second clad electrode (134) may be positioned to cover a second assembly wiring (133). Additionally, a third clad electrode (136) may be positioned to cover a third assembly wiring (135).

[0115] The first, second, and third assembly wires (131, 133, 135) are positioned on the outer edge of the assembly hole (162H, 164H, 166H), and the first, second, and third clad electrodes (132, 134, 136) may be positioned inside the assembly hole. Additionally, the first, second, and third clad electrodes (132, 134, 136) may be thinner than the thickness of the first, second, and third assembly wires (131, 133, 135). Furthermore, the first, second, and third clad electrodes (132, 134, 136) may be formed from a corrosion-resistant material. For example, they may include, but are not limited to, molybdenum (Mo), molybdenum titanium (MoTi), etc.

[0116] Accordingly, the embodiment has the technical effect of being able to reduce the thickness of the assembly hole and prevent corrosion when assembled in a fluid by positioning a clad electrode thinner than the assembly wiring within the assembly hole.

[0118] FIG. 7b is a cross-sectional view of a transfer substrate of a semiconductor light-emitting device according to a third embodiment. The third embodiment may adopt the technical features of the first embodiment.

[0119] In the third embodiment, the first semiconductor light-emitting element (152) can be assembled by the fourth assembly wiring (130a) and the fifth assembly wiring (130b). Additionally, the second semiconductor light-emitting element (152) can be assembled by the fifth assembly wiring (130b) and the fourth assembly wiring (130a). The third semiconductor light-emitting element (152) can be assembled by the fourth assembly wiring (130a) and the fifth assembly wiring (130b). The fourth assembly wiring (130a) and the fifth assembly wiring (130b) may be subjected to alternating current voltages having opposite magnitudes.

[0120] The first semiconductor light-emitting element (152) and the second semiconductor light-emitting element (154) may use the fifth assembly wiring (130b) as a common assembly wiring. Even if the same voltage is applied to the first semiconductor light-emitting element (152) and the second semiconductor light-emitting element (154) in the common assembly wiring, the thickness of the first dielectric layer (142) and the second dielectric layer (144) may be different, so the assembly voltage acting on the first semiconductor light-emitting element (152) and the second semiconductor light-emitting element (154) may be different.

[0121] Accordingly, the third embodiment has the technical effect of enabling the simultaneous assembly of semiconductor light-emitting devices that emit different colors or have different sizes by forming the dielectric layers placed in the assembly holes differently, even when using common assembly wiring in adjacent assembly holes.

[0122] Furthermore, since common assembly wiring is utilized, the number of assembly wires is significantly reduced, resulting in the technical benefit of enabling high resolution by reducing the area of ​​assembly wiring on the transfer substrate. Additionally, there is a technical benefit of reduced difficulty in the assembly wiring formation process and reduced signal interference between adjacent assembly wires.

[0124] FIG. 8 is a plan view of a substrate for assembling a semiconductor light-emitting device according to the first embodiment of FIG. 6. Referring to FIG. 8, a plurality of assembly lines (131a, 131b) are arranged on the substrate, and assembly holes having different sizes may be formed. The diameter of the first assembly hole (162H) may be larger than the diameter of the second assembly hole (164H). Additionally, the diameter of the second assembly hole (164H) may be larger than the diameter of the third assembly hole (166H). A first semiconductor light-emitting device (152), a second semiconductor light-emitting device (154), and a third semiconductor light-emitting device (156), each having different sizes, may be assembled in the assembly holes (162H, 164H, 166H). Additionally, a first dielectric layer (142) may be arranged on the first assembly hole (162H). Additionally, a second dielectric layer (144) may be disposed in the second assembly hole (164H). Additionally, a third dielectric layer (146) may be disposed in the third assembly hole (166H). The thicknesses of the first, second, and third dielectric layers may differ. Additionally, the areas of the first, second, and third dielectric layers may differ depending on the area of ​​the assembly hole. The area of ​​the first dielectric layer (142) may be larger than the area of ​​the second dielectric layer (144). Additionally, the area of ​​the second dielectric layer (144) may be larger than the area of ​​the third dielectric layer (146).

[0125] The embodiment has a special technical effect of being able to simultaneously assemble semiconductor light-emitting devices of different colors through a common assembly wiring by varying the thickness of the dielectric layer placed in each of the plurality of assembly holes.

[0127] FIG. 9 is a plan view of a transfer substrate for a semiconductor light-emitting element according to a fourth embodiment. Referring to FIG. 9, the transfer substrate (105a) for a semiconductor light-emitting element of the fourth embodiment may include a first assembly part (122), a second assembly part (124), and a third assembly part (126). Semiconductor light-emitting elements having different sizes may be assembled in each of the first, second, and third assembly parts (122, 124, 126).

[0128] At this time, the first assembly part (122) may include a fourth assembly wiring (130a) and a fifth assembly wiring (130b). Additionally, the second assembly part (124) may include a fifth assembly wiring (130b) and a fourth assembly wiring (130a). Additionally, the third assembly part (126) may include a fourth assembly wiring (130a) and a fifth assembly wiring (130b).

[0129] An AC power source having opposite sizes is applied to the above-mentioned fourth assembly wiring (130a) and fifth assembly wiring (130b) so that semiconductor light-emitting elements can be assembled within the assembly hole. Additionally, even if the sizes of the semiconductor light-emitting elements are different, they can be assembled with the same assembly wiring by forming the thickness of the dielectric layer differently.

[0130] Accordingly, the first assembly (122) and the second assembly (124) can use the fifth assembly wiring (130b) as a common wiring. Additionally, the second assembly (124) and the third assembly (126) can use the fourth assembly wiring (130a) as a common wiring.

[0131] Accordingly, the fourth embodiment has a special technical effect of reducing the number of assembly lines and significantly reducing the area occupied by assembly lines on the transfer substrate, as adjacent assembly parts use common wiring.

[0132] Furthermore, the fourth embodiment has the technical effect of enabling high resolution by increasing the assembly area of ​​the semiconductor light-emitting device. In addition, since it is not necessary to prevent signal interference between adjacent electrodes, the semiconductor light-emitting devices can be positioned close together without securing a separation distance, thereby providing a special technical effect of enabling high resolution.

[0133] Additionally, in the fourth embodiment, the colors R, G, and B can be arranged in sequence in each assembly. The color sequence of the semiconductor light-emitting element in the first assembly (122) and the color sequence of the semiconductor light-emitting element in the second assembly (124) can be arranged identically. Additionally, the color sequence of the semiconductor light-emitting element in the second assembly (124) and the color sequence of the semiconductor light-emitting element in the third assembly (126) can be arranged identically.

[0135] FIG. 10 is a plan view of a transfer substrate (105b) of a semiconductor light-emitting element according to the fifth embodiment. The fifth embodiment may adopt the technical features of the fourth embodiment. For example, adjacent assembly sections may assemble semiconductor light-emitting elements using common wiring. Subsequently, referring to FIG. 10, the color arrangement of the semiconductor light-emitting element in the first assembly section (122) may be different from the color arrangement of the semiconductor light-emitting element in the second assembly section (124). In addition, the color arrangement of the semiconductor light-emitting element in the third assembly section (126) may be the same as the color arrangement of the semiconductor light-emitting element in the first assembly section (122).

[0137] FIG. 11 is a plan view of a transfer substrate (150c) of a semiconductor light-emitting element according to the sixth embodiment. The sixth embodiment may adopt the technical features of the fourth embodiment. For example, adjacent assembly sections may assemble semiconductor light-emitting elements using common wiring. Subsequently, referring to FIG. 11, the color arrangement of the semiconductor light-emitting element in the first assembly section (122) may be different from the color arrangement of the semiconductor light-emitting element in the second assembly section (124). Additionally, the color arrangement of the semiconductor light-emitting element in the third assembly section (126) may be different from the color arrangement of the semiconductor light-emitting element in the first assembly section (122).

[0138] Accordingly, in the sixth embodiment, the colors of the semiconductor light-emitting elements can be arranged sequentially in a matrix form.

[0139] Accordingly, the 4th to 6th embodiments have a special technical effect that can improve the degree of freedom of color arrangement of semiconductor light-emitting devices.

[0141] The transfer substrate for a semiconductor light-emitting device according to the embodiment has the technical effect of enabling the simultaneous assembly of semiconductor light-emitting devices emitting R, G, and B colors.

[0142] For example, in the embodiment, the thickness of the dielectric layer is arranged differently for each assembly hole in the same assembly wiring, and by controlling the assembly voltage of each assembly hole, semiconductor light-emitting devices of different colors and sizes can be assembled simultaneously.

[0143] In addition, the embodiment has the technical effect of minimizing the area of ​​assembly wiring on a transfer substrate and improving the placement area of ​​semiconductor light-emitting devices, thereby enabling high resolution.

[0144] For example, since the embodiment controls the assembly voltage through the thickness of the dielectric layer, the same assembly wiring can be used in adjacent assembly sections, thereby reducing the number of assembly wirings and, accordingly, improving the placement area of ​​the semiconductor light-emitting device.

[0145] In addition, the embodiment has the technical effect of preventing signal interference and electrical short circuits between assembled wirings.

[0146] For example, the embodiment uses shared assembly wiring to reduce the number of assembly wirings and prevents signal interference and electrical short circuits because the assembly wirings are not adjacent.

[0147] In addition, the embodiment has the technical effect of improving the degree of freedom in the arrangement of semiconductor light-emitting devices that emit R, G, and B colors.

[0148] For example, the embodiment can improve the degree of freedom of color-by-color arrangement by forming assembly holes in the transfer substrate according to the color-by-color arrangement of the semiconductor light-emitting element.

[0149] In addition, the embodiment has the technical effect of preventing transfer defects in semiconductor light-emitting devices and improving the transfer rate.

[0150] For example, the embodiment can prevent assembly defects in which the chip is double-assembled or unassembled through a difference in the thickness of the dielectric layer along with a difference in the size of the assembly hole.

[0152] Although the present invention has been described above with reference to embodiments thereof, those skilled in the art will readily understand that various modifications and changes can be made to the present invention without departing from the spirit and scope of the invention as described in the following claims. Explanation of the symbols

[0154] 122: 1st Assembly Part 124: Second Assembly Part 126: Third Assembly Part 130a: 4th Assembly Wiring 130b: 5th Assembly Wiring 131: First Assembly Wiring 132: First clad electrode 133: Second Assembly Wiring 134: Second clad electrode 135: Third Assembly Wiring 136: Third clad electrode 142: First dielectric layer 144: Second dielectric layer 146: Third dielectric layer 152: First semiconductor light-emitting device 154: Second semiconductor light-emitting device 156: Third semiconductor light-emitting device 162H: 1st Assembly Hole 164H: 2nd Assembly Hall 166H: 3rd Assembly Hole

Claims

Claim 1 A substrate; a plurality of assembly lines disposed on the substrate; a first assembly hole disposed on the plurality of assembly lines in which a first semiconductor light-emitting element is assembled, a second assembly hole in which a second semiconductor light-emitting element is assembled, and a third assembly hole in which a third semiconductor light-emitting element is assembled; A semiconductor comprising: a first dielectric layer disposed within the first assembly hole and a second dielectric layer disposed within the second assembly hole; wherein the plurality of assembly wires are configured to have an assembly voltage applied simultaneously; and an assembly portion comprising a first assembly portion, a second assembly portion, and a third assembly portion disposed in the longitudinal direction of the assembly wires; wherein the first semiconductor light-emitting element, the second semiconductor light-emitting element, and the third semiconductor light-emitting element are arranged in the longitudinal direction of the assembly portion such that their sizes are different from each other; and wherein when the same voltage is applied to the plurality of assembly wires, the assembly voltage acting on the first semiconductor light-emitting element, the second semiconductor light-emitting element, and the third semiconductor light-emitting element is different from each other; and wherein the thickness of the first dielectric layer and the diameter of the first assembly hole, the thickness of the second dielectric layer and the diameter of the second assembly hole are set differently from each other so that when the same assembly voltage is applied, a dielectrophoretic force acts on a semiconductor light-emitting element of a corresponding size among the first to third semiconductor light-emitting elements to assemble them, and thus semiconductor light-emitting elements of different sizes and colors are separated and assembled in their respective corresponding assembly holes. Transfer substrate for light-emitting devices. Claim 2 A transfer substrate for a semiconductor light-emitting device according to claim 1, wherein the thickness of the first dielectric layer is greater than the thickness of the second dielectric layer. Claim 3 A transfer substrate for a semiconductor light-emitting device according to paragraph 2, wherein the diameter of the first assembly hole is larger than the diameter of the second assembly hole. Claim 4 A transfer substrate for a semiconductor light-emitting device according to claim 1, comprising a first assembly wiring and a second-1 assembly wiring disposed below the first assembly hole, a second-2 assembly wiring and a third assembly wiring disposed below the second assembly hole, wherein the second-1 assembly wiring and the second-2 assembly wiring are formed integrally. Claim 5 A transfer substrate for a semiconductor light-emitting device, wherein, in paragraph 4, the first assembly wiring and the third assembly wiring are formed integrally. Claim 6 A transfer substrate for semiconductor light-emitting elements according to claim 1, wherein the color arrangement of the first to third semiconductor light-emitting elements along the longitudinal direction of the first assembly part is different from the color arrangement of the first to third semiconductor light-emitting elements along the longitudinal direction of the second assembly part. Claim 7 A transfer substrate for semiconductor light-emitting devices according to claim 1, wherein the first semiconductor light-emitting device, the second semiconductor light-emitting device, and the third semiconductor light-emitting device emit different colors and are assembled simultaneously. Claim 8 A transfer substrate for a semiconductor light-emitting device, wherein, in paragraph 2, the area of ​​the first dielectric layer is larger than the area of ​​the second dielectric layer. Claim 9 A transfer substrate for a semiconductor light-emitting device according to claim 5, wherein the thickness of the first dielectric layer is greater than the thickness of the second dielectric layer, and the assembly voltage applied to the second assembly hole is greater than the assembly voltage applied to the first assembly hole. Claim 10 A transfer substrate for a semiconductor light-emitting device according to claim 1, wherein the dielectric layer comprises an oxide film comprising at least one of Si, Al, Sn, Ti, Zn, Ba, Y, and Ta.

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