Plasma treatment device and plasma treatment method

Abstract

A plasma processing device comprises a plasma processing chamber, a substrate support member disposed within the plasma processing chamber, an annular baffle plate disposed to surround the substrate support member and having a plurality of openings, a first annular plate disposed below the annular baffle plate with its inner end fixed to the side wall of the substrate support member, a movable structure disposed below the first annular plate, a cylindrical wall member disposed vertically along the side wall of the plasma processing chamber and forming a gap between the side walls of the plasma processing chamber, a second annular plate disposed at the upper end of the inner wall of the cylindrical wall member and forming an annular overlapping portion by overlapping vertically with a part of the first annular plate, and an actuator for moving the movable structure in the vertical direction.

Description

Technology Field

[0001] The present disclosure relates to a plasma treatment apparatus and a plasma treatment method. Background Technology

[0002] Patent Document 1 discloses a substrate processing apparatus comprising a processing chamber for performing plasma treatment on a substrate, an exhaust chamber communicating with the processing chamber, an exhaust plate having a plurality of first ventilation holes and partitioning the processing chamber and the exhaust chamber, and an exhaust control plate disposed within the exhaust chamber. According to the substrate processing apparatus described in Patent Document 1, the exhaust control plate has a plurality of second ventilation holes and is configured to be in contact with the exhaust plate in parallel with each other and to be spaced apart from the exhaust plate. Prior art literature

[0003] Patent Document 1: Japanese Patent Publication No. 2012-15451 The problem to be solved

[0004] The technology according to the present disclosure provides a plasma processing device capable of controlling the internal pressure of a processing chamber in a short period of time. means of solving the problem

[0005] One aspect of the present disclosure comprises a plasma processing apparatus, the plasma processing chamber; a substrate support member disposed within the plasma processing chamber; an annular baffle plate disposed to surround the substrate support member and having a plurality of openings; a first annular plate disposed below the annular baffle plate, with its inner end fixed to the side wall of the substrate support member; a movable structure disposed below the first annular plate, comprising a cylindrical wall member disposed longitudinally along the side wall of the plasma processing chamber and forming a gap between the side walls of the plasma processing chamber; a second annular plate disposed at the upper end of the inner wall of the cylindrical wall member and forming an annular overlap portion by overlapping longitudinally with a part of the first annular plate; and an actuator for moving the movable structure in a longitudinal direction. Effects of the invention

[0006] According to the present disclosure, a plasma processing device capable of controlling the internal pressure of a processing chamber in a short time can be provided. Brief explanation of the drawing

[0007] Figure 1 is a schematic diagram showing the configuration of a plasma processing system. FIG. 2 is a cross-sectional view schematically showing an example of the configuration of a plasma processing device. Figure 3 is an enlarged view of the main parts showing an example of the configuration of the main parts of the exhaust system. FIG. 4 is a perspective cross-sectional view showing a schematic example of the configuration of the second pressure regulating mechanism. Figure 5 is a plan view showing an example of the arrangement of the second pressure regulating mechanism. FIG. 6 is an explanatory diagram showing an example of the relationship between the separation in the second pressure regulating mechanism and the internal pressure of the plasma processing chamber. Figure 7 is an enlarged view of the main part showing a modified example of the second pressure regulating mechanism. FIG. 8 is a perspective cross-sectional view showing a modified example of the second pressure regulating mechanism. FIG. 9 is an enlarged view of the main part showing a modified example of the second pressure regulating mechanism. FIG. 10 is an enlarged view of the main part showing a modified example of the second pressure regulating mechanism. FIG. 11 is an explanatory diagram showing the results of an embodiment of the technology according to the present disclosure. Specific details for implementing the invention

[0008] In the manufacturing process of a semiconductor device, a processing gas is supplied to a semiconductor substrate (hereinafter simply referred to as "substrate"), and various plasma treatments, such as etching, film deposition, and diffusion, are performed on the substrate. These plasma treatments are performed in a plasma processing apparatus having a processing chamber capable of controlling the interior to a reduced pressure atmosphere. In the plasma processing apparatus, it is important to precisely control the internal pressure of the processing chamber in order to properly perform plasma treatment on the substrate.

[0009] In the aforementioned Patent Document 1, a substrate processing device (plasma processing device) is disclosed, comprising an exhaust plate that partitions the processing chamber and the exhaust chamber in order to precisely control the internal pressure of the processing chamber (processing chamber), and an exhaust control plate configured to be in contact with the exhaust plate and also spaced apart from the exhaust plate. A plurality of ventilation holes formed through the thickness direction are each formed in the exhaust plate and the exhaust control plate. Furthermore, the substrate processing device described in Patent Document 1 is configured to enable fine pressure adjustment at relatively low pressure or relatively high pressure by adjusting the position of the exhaust control plate relative to the exhaust plate.

[0010] However, in recent semiconductor device manufacturing processes, the demand for miniaturization of patterns formed on substrate surfaces necessitates rapid adjustment of the internal pressure of the processing chamber. Conversely, processing chambers where plasma processing is performed require large capacities, such as plasma gas or high-capacity power sources, which can make rapid pressure adjustment difficult. In particular, when a plasma processing device is equipped with an inductively coupled plasma (ICP) plasma generation unit, the capacity of the processing chamber is generally large, and rapid adjustment of the internal pressure of the chamber has been a critical challenge.

[0011] The technology according to the present disclosure is made in consideration of the above circumstances and provides a plasma processing apparatus capable of controlling the internal pressure of a processing chamber in a short period of time. Hereinafter, a plasma processing system equipped with a plasma processing apparatus according to the present embodiment and a plasma processing method according to one embodiment will be described with reference to the drawings. Furthermore, in the present specification and drawings, elements having substantially the same functional configuration are given the same reference numerals to omit redundant descriptions.

[0012] Configuration of the Plasma Processing System

[0013] First, a plasma processing system according to one embodiment will be described. FIG. 1 is an explanatory diagram illustrating a schematic configuration of a plasma processing system.

[0014] In one embodiment, the plasma processing system includes a plasma processing device (1) and a control unit (2) as shown in FIG. 1. The plasma processing device (1) includes a plasma processing chamber (10), a substrate support (11), and a plasma generating unit (12).

[0015] The plasma processing chamber (10) has a plasma processing space. Additionally, the plasma processing chamber (10) has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas discharge port for discharging gas from the plasma processing space. The gas supply port is connected to a gas supply unit (20) described later, and the gas discharge port is connected to an exhaust system (40) described later. A substrate support unit (11) is disposed within the plasma processing space and has a substrate support surface for supporting a substrate.

[0016] The plasma generation unit (12) is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR), helicon wave excited plasma (HWP), or surface wave plasma (SWP). In addition, various types of plasma generation units, including an alternating current (AC) plasma generation unit and a direct current (DC) plasma generation unit, may be used. In one embodiment, the AC signal (AC power) used in the AC plasma generation unit has a frequency within the range of 100 kHz to 10 GHz. Accordingly, the AC signal includes an RF (Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency within the range of 100 kHz to 150 MHz.

[0017] The control unit (2) processes computer-executable commands to execute various processes described in the present disclosure on the plasma processing device (1). The control unit (2) may be configured to control each element of the plasma processing device (1) to execute the various processes described herein. In one embodiment, part or all of the control unit (2) may be included in the plasma processing device (1). The control unit (2) may include a processing unit (2a1), a memory unit (2a2), and a communication interface (2a3). The control unit (2) is realized, for example, by a computer (2a). The processing unit (2a1) may be configured to perform various control operations by reading a program from the memory unit (2a2) and executing the read program. This program may be stored in the memory unit (2a2) in advance, or may be acquired via a medium when necessary. The acquired program is stored in a memory unit (2a2) and is read from the memory unit (2a2) and executed by a processing unit (2a1). The medium may be various storage media readable by a computer (2a) or a communication line connected to a communication interface (2a3). The processing unit (2a1) may be a CPU (Central Processing Unit). The memory unit (2a2) may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof. The communication interface (2a3) may communicate with the plasma processing device (1) through a communication line such as a LAN (Local Area Network). The above storage medium may be temporary or non-temporary.

[0018] <Configuration of Plasma Processing Device>

[0019] Below, an example of the configuration of an inductively coupled plasma processing device (ICP) as an example of a plasma processing device (1) will be described. FIG. 2 is a cross-sectional view illustrating a schematic configuration of a plasma processing device (1).

[0020] An inductively coupled plasma processing device (1) comprises a plasma processing chamber (10), a gas supply unit (20), a power source (30), an exhaust system (40), and a pressure detector (50). The plasma processing chamber (10) comprises a dielectric window (101). Additionally, the plasma processing device (1) comprises a substrate support (11), a gas introduction unit, and an antenna (14). The substrate support (11) is positioned within the plasma processing chamber (10). The antenna (14) is positioned above the plasma processing chamber (10) or above it (i.e. above the dielectric window (101) or above it). The plasma processing chamber (10) has a plasma processing space (10s) defined by the dielectric window (101), the side wall (102) of the plasma processing chamber (10), and the substrate support (11). The plasma treatment chamber (10) has at least one gas supply port for supplying at least one treatment gas to the plasma treatment space (10s) and at least one gas discharge port for discharging gas from the plasma treatment space (10s). In addition, the volume of the plasma treatment chamber (10) is, in one example, 50 L or more.

[0021] The substrate support portion (11) includes a main body portion (111) and a ring assembly (112). The main body portion (111) has a central region (111a) for supporting a substrate (W) and an annular region (111b) for supporting a ring assembly (112). A wafer is an example of a substrate (W). The annular region (111b) of the main body portion (111) surrounds the central region (111a) of the main body portion (111) when viewed in a plane. A substrate (W) is placed on the central region (111a), and a ring assembly (112) is placed on the annular region (111b) to surround the substrate (W) on the central region (111a). Accordingly, the central region (111a) is also called a substrate support surface for supporting a substrate (W), and the annular region (111b) is also called a ring support surface for supporting a ring assembly (112).

[0022] In one embodiment, the main body (111) includes a base not illustrated and an electrostatic chuck not illustrated. The base includes a conductive member. The conductive member of the base can function as a bias electrode. The electrostatic chuck is disposed on the base. The electrostatic chuck includes an electrostatic electrode not illustrated. The electrostatic chuck has a central region (111a). In one embodiment, the electrostatic chuck also has an annular region (111b). Additionally, another member surrounding the electrostatic chuck, such as an annular electrostatic chuck or an annular insulating member, may have the annular region (111b). In this case, the ring assembly (112) may be disposed on the annular electrostatic chuck or annular insulating member, or may be disposed on both the electrostatic chuck (1111) and the annular insulating member. Additionally, at least one RF / DC electrode coupled to the RF power source (31) and / or DC power source (32) described later may be disposed within the electrostatic chuck. In this case, at least one RF / DC electrode functions as a bias electrode. Additionally, the conductive member of the base and at least one RF / DC electrode may function as a plurality of bias electrodes. Additionally, an electrostatic electrode may function as a bias electrode. Accordingly, the substrate support (11) includes at least one bias electrode.

[0023] The ring assembly (112) comprises one or more annular members. In one embodiment, the one or more annular members comprise one or more edge rings and at least one covering ring. The edge rings are formed of a conductive material or an insulating material, and the covering ring is formed of an insulating material.

[0024] Additionally, although omitted, the substrate support member (11) may include a temperature control module configured to control at least one of the electrostatic chuck, ring assembly (112), and substrate (W) to a target temperature. The temperature control module may include a heater, a heat transfer medium, a flow path, or a combination thereof. A heat transfer fluid, such as brine or gas, flows through the flow path. In one embodiment, the flow path is formed within the base, and one or more heaters are disposed within the electrostatic chuck. Additionally, the substrate support member (11) may include a heat transfer gas supply member configured to supply heat transfer gas to the gap between the back surface of the substrate (W) and the substrate support surface (111a).

[0025] A gas inlet is configured to introduce at least one processing gas from a gas supply unit (20) into a plasma processing space (10s). In one embodiment, the gas inlet includes a center gas injector (CGI) (13). The center gas injector (13) is positioned above a substrate support (11) and is attached to a central opening formed in a dielectric window (101). The center gas injector (13) has at least one gas supply port (13a), at least one gas flow path (13b), and at least one gas inlet port (13c). Processing gas supplied to the gas supply port (13a) passes through the gas flow path (13b) and is introduced into the plasma processing space (10s) from the gas inlet port (13c). Additionally, the gas inlet may include one or more side gas injectors (SGI: Side Gas Injector) attached to one or more openings formed in the side wall (102) in addition to or instead of the central gas injector (13).

[0026] The gas supply unit (20) may include at least one gas source (21) and at least one flow controller (22). In one embodiment, the gas supply unit (20) is configured to supply at least one processing gas from each corresponding gas source (21) through each corresponding flow controller (22) to the gas introduction unit. Each flow controller (22) may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit (20) may include at least one flow modulation device for modulating or pulsed the flow rate of at least one processing gas.

[0027] The power supply (30) includes an RF power supply (31) coupled to the plasma processing chamber (10) through at least one impedance matching circuit. The RF power supply (31) is configured to supply at least one RF signal (RF power) to at least one bias electrode and antenna (14). By this, plasma is formed from at least one processing gas supplied to the plasma processing space (10s). Thus, the RF power supply (31) can function as at least part of the plasma generation unit (12). Additionally, by supplying the bias RF signal to at least one bias electrode, a bias potential is generated in the substrate (W), allowing ions in the formed plasma to be introduced into the substrate (W).

[0028] In one embodiment, the RF power supply (31) includes a first RF generating unit (31a) and a second RF generating unit (31b). The first RF generating unit (31a) is coupled to the antenna (14) through at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency within the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit (31a) may be configured to generate a plurality of source RF signals having different frequencies. The generated one or more source RF signals are supplied to the antenna (14).

[0029] The second RF generation unit (31b) is coupled to at least one bias electrode through at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency within the range of 100 kHz to 60 MHz. In one embodiment, the second RF generation unit (31b) may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one bias electrode. In addition, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0030] Additionally, the power supply (30) may include a DC power supply (32) coupled to the plasma processing chamber (10). The DC power supply (32) includes a bias DC generating unit (32a). In one embodiment, the bias DC generating unit (32c) is connected to at least one bias electrode and configured to generate a bias DC signal. The generated bias DC signal is applied to at least one bias electrode.

[0031] In various embodiments, the bias DC signal may be pulsed. In this case, a sequence of voltage pulses is applied to at least one bias electrode. The voltage pulse may have a pulse waveform that is rectangular, trapezoidal, triangular, or a combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between a bias DC generator (32a) and at least one bias electrode. Thus, the bias DC generator (32a) and the waveform generator constitute a voltage pulse generator. The voltage pulse may have positive polarity or negative polarity. Additionally, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one cycle. Additionally, the bias DC generator (32a) may be installed in addition to the RF power source (31) or installed in place of the second RF generator (31b).

[0032] The antenna (14) includes one or more coils. In one embodiment, the antenna (14) may include an outer coil and an inner coil arranged coaxially. In this case, the RF power supply (31) may be connected to both the outer coil and the inner coil, or connected to either the outer coil or the inner coil. In the former case, the same RF generating unit may be connected to both the outer coil and the inner coil, or separate RF generating units may be connected to the outer coil and the inner coil separately.

[0033] The exhaust system (40) exhausts and depressurizes the interior of the plasma processing chamber (10) (plasma processing space (10s)) through an exhaust path (10e) formed around the substrate support (11) when viewed from a planar view and a gas outlet (10f) formed on the bottom surface of the plasma processing chamber (10). The exhaust system (40) is equipped with an annular baffle plate (41) that partitions the plasma processing space (10s) and the exhaust path (10e), a first pressure regulating mechanism (42) that opens and closes the gas outlet (10f) by the operation of a driving mechanism (42a), and an exhaust mechanism (43) that exhausts the interior of the plasma processing space (10s) through the first pressure regulating mechanism (42). In addition, in this embodiment, a second pressure regulating mechanism (60) is disposed on the downstream side of the annular baffle plate (41) in the exhaust path (10e) to adjust the internal pressure of the plasma processing space (10s) in a short time. The second pressure regulating mechanism (60) includes an upper plate (61), a movable structure (62), and an actuator (63). Additionally, the detailed configuration of the exhaust system (40) including the second pressure regulating mechanism (60) will be described later.

[0034] The pressure detector (50) measures the internal pressure of the plasma treatment chamber (10) (plasma treatment space (10s)) during plasma treatment. The type of pressure detector (50) is not particularly limited and can be arbitrarily determined as long as it can measure the internal pressure of the plasma treatment chamber (10).

[0035] <Composition of the Exhaust System>

[0036] Next, an example of the detailed configuration of the aforementioned exhaust system (40) will be described. FIG. 3 is an enlarged view of the main part of the exhaust system (40). FIG. 4 is a perspective cross-sectional view schematically showing the second pressure regulating mechanism (60) provided by the exhaust system (40).

[0037] As described above, the exhaust system (40) includes an annular baffle plate (41), a first pressure regulating mechanism (42), an exhaust mechanism (43), and a second pressure regulating mechanism (60).

[0038] The annular baffle plate (41) is positioned around the substrate support (11) when viewed in a planar view to partition between the plasma processing space (10s) and the exhaust path (10e). The annular baffle plate (41) is an annular plate-shaped member having a plurality of openings (41a), and in addition to communicating the plasma processing space (10s) and the exhaust path (10e) through the openings (41a), it captures or reflects plasma generated in the plasma processing space (10s) to suppress leakage into the exhaust path (10e). Furthermore, the annular baffle plate (41) is positioned parallel to the substrate (W) placed on the substrate support (11) and is positioned lower than the upper surface of the substrate (W), more specifically the substrate support surface, in the drawing. Accordingly, the annular baffle plate (41) is arranged along the horizontal direction to surround the side wall of the substrate support (11) and has a plurality of openings (41a) formed to penetrate the annular baffle plate (41) in the vertical direction.

[0039] The first pressure adjustment mechanism (42) adjusts the pressure reduction operation of the plasma processing space (10s) performed by the exhaust mechanism (43), that is, adjusts the internal pressure (degree of pressure reduction) of the plasma processing chamber (10). As the first pressure adjustment mechanism (42), a pressure control valve such as an Adaptive Pressure Control (APC) valve or a pocket valve can be selected. Accordingly, the pressure control valve is configured to control the pressure within the plasma processing chamber and is selected from at least one of an APC valve or a pocket valve.

[0040] The exhaust mechanism (43) reduces the pressure inside the plasma treatment space (10s). The exhaust mechanism (43) may include, for example, a vacuum pump such as a turbo molecular pump or a dry pump, or a combination thereof.

[0041] The second pressure adjusting mechanism (60) includes an upper plate (61), a movable structure (62), and an actuator (63) as described above.

[0042] The upper plate (first annular plate) (61) is fixedly positioned against the side wall (11a) of the substrate support (11), for example, downstream of the annular baffle plate (41) in the exhaust path (10e). Thus, the first annular plate (61) is positioned below the annular baffle plate (41). In one embodiment, the fixed upper annular plate (61) is fixed to the side wall (11a) of the substrate support (11) and extends horizontally outward from the side wall (11a) of the substrate support (11). A first gap (G1) is formed between the fixed upper annular plate (61) and the side wall (102) of the plasma processing chamber (10). In one embodiment, the distance (H1) between the annular baffle plate (41) and the fixed upper annular plate (61) is 40 mm or more. In one embodiment, the first annular plate (61) completely overlaps the annular baffle plate (41) in the longitudinal direction. The upper plate (61) is an annular, non-porous plate-shaped member having no openings, and the width (L1) of the annular portion (see FIG. 3) is formed to be smaller compared to the width (L3) of the annular baffle plate (41) (see FIG. 3). In other words, an exhaust passage (G1) with a width [L3-L1] is formed between the outer end of the upper plate (61) and the side wall (102) of the plasma processing chamber (10). The width (L1) of the upper plate (61) can be designed arbitrarily. At this time, the width [L3-L1] of the exhaust passage (G1) is at least smaller compared to the width (L1) of the upper plate (61) (L3-L1 <L1) 것이 바람직하다. 바꿔 말하면, 상측 플레이트(61)의 폭(L1)은, 환상 배플 플레이트(41)의 절반폭(L3 / 2)과 비교하여 크다. 또한, 배기 유로(G1)의 폭[L3-L1]은, 후술하는 간극(C)의 폭과 비교하여 크다.

[0043] In addition, the distance (H1) between the annular baffle plate (41) and the upper plate (61) (see FIG. 3) can be arbitrarily designed, but for example, from the perspective of properly adjusting the exhaust conductance, it is preferable that the distance (H1) be at least 40 mm or more.

[0044] The movable structure (62) is positioned on the side wall (102) of the plasma processing chamber (10), for example, downstream of the upper plate (61) in the exhaust path (10e). Accordingly, the movable structure (62) is positioned below the fixed upper annular plate (61). In one embodiment, the movable structure (62) includes a cylindrical wall (62a) and a lower plate (62b). The cylindrical wall (62a) and the lower plate (62b) may be separate members or may be integrated. The movable structure (62) has a roughly L-shaped cross-sectional shape formed by the cylindrical wall (62a) and the lower plate (62b). Therefore, in the following description, the movable structure (62) may be referred to as an L-shaped structure.

[0045] The cylindrical wall (62a) is arranged vertically along the side wall (102) of the plasma processing chamber (10) and is positioned slightly spaced apart from the side wall (102) to form a gap (C) as a bypass channel between it and the side wall (102). That is, the cylindrical wall (62a) and the side wall (102) of the plasma processing chamber (10) are arranged concentrically, and the cylindrical wall (62a) has an outer diameter slightly smaller than the inner diameter of the side wall (102). By this, an annular gap (C) is formed between the side wall (102) constituting the inner wall surface of the plasma processing chamber (10) and the cylindrical wall (62a) of the movable structure (62). In one embodiment, the cylindrical wall (62a) is formed as a porous member without openings and extends vertically along the side wall (102) of the plasma processing chamber (10). And, a second gap (G2) is formed between the cylindrical wall (62a) and the side wall (102) of the plasma treatment chamber (10). In one embodiment, the cylindrical wall has a longitudinal dimension H2 of 10 mm to 60 mm.

[0046] The width (L4) of the gap (C) (second gap (G2)) (see FIG. 3) is determined to be such that it can continuously generate a flow of exhaust by the exhaust mechanism (43) from the plasma treatment space (10s) and also does not affect the internal pressure of the plasma treatment space (10s) during plasma treatment, and is preferably 2.0 mm or less. In one embodiment, the annular gap (C) has the same width (L4) over its entire circumference.

[0047] In addition, the length of the gap (C), in other words, the longitudinal length H2 of the cylindrical wall (62a) (see FIG. 3), is determined in balance with the width (L4) of the gap (C), and is preferably 10 mm to 60 mm. Specifically, the longitudinal length (H2) of the cylindrical wall (62a) is determined so that the conductance of exhaust (hereinafter simply referred to as "exhaust conductance") carried out through the gap C by the exhaust mechanism (43) becomes a predetermined desired value. More specifically, so that the exhaust conductance becomes a desired value, the length (H2) of the gap (C) is determined to be long when the width (L4) of the gap (C) is large, and the length (H2) of the gap (C) is determined to be short when the width (L4) of the gap (C) is small.

[0048] The lower plate (second annular plate) (62b) is connected to the cylindrical wall (62a) so as to protrude from the upper end of the inner wall side (inner side in the radial direction) of the cylindrical wall (62a) toward the inner side (i.e., inner side in the radial direction) of the plasma processing chamber (10). The lower plate (62b) is positioned approximately parallel to the upper plate (61), for example, on the downstream side of the upper plate (61) in the exhaust path (10e). Thus, the second annular plate (62b) is positioned below the first annular plate (61). In one embodiment, the lower annular plate (62b) extends horizontally inward from the upper end of the cylindrical wall (62a). The lower annular plate (62b) has an annular overlap portion (62c) that overlaps vertically with the fixed upper annular plate (61). And, a third gap (G3) is formed between the lower annular plate (62b) and the side wall (11a) of the substrate support (11). In one embodiment, the first gap (G1) is smaller than the width (L1) of the fixed upper annular plate (61) and larger than the second gap (G2). In one embodiment, the second annular plate (62b) completely overlaps with the annular baffle plate (41) in the longitudinal direction. The lower plate (62b) is an annular, non-porous plate-shaped member that does not have an opening, and the width (L2) of the movable structure (62) (see FIG. 3: the sum of the width of the annular portion of the lower plate (62b) and the thickness of the cylindrical wall (62a)) is formed to be smaller compared to the width (L3) of the annular baffle plate (41). In other words, an exhaust passage (G3) with a width [L3-L2] is formed between the outer end of the lower plate (62b) and the side wall (102) of the plasma processing chamber (10). The width (L2) of the lower plate (62b) can be arbitrarily designed.

[0049] Additionally, the first annular plate (61) and the second annular plate (62b) do not have multiple openings penetrating in the longitudinal direction, such as the annular baffle plate (41). Accordingly, each of the multiple openings (41a) of the annular baffle plate (41) is shielded by at least one of the first annular plate (61) and the second annular plate (62b) (more specifically, the movable structure (62) including the cylindrical wall (62a)) when viewed in a planar view. That is, each opening (41a) of the annular baffle plate (41) may be selectively shielded by the first annular plate (61) or the second annular plate (62b) when viewed in a planar view, or may be shielded by both the first annular plate (61) and the second annular plate (62b) when viewed in a planar view. Therefore, when looking downward in a vertical direction from the top of the multiple openings (41a), the space below the second annular plate (62b) is not visible.

[0050] In addition, in this embodiment, the movable structure (62) is configured to be movable in a far-field direction (vertical direction in the illustrated example) relative to the upper plate (61) by, for example, the operation of an actuator (63). In other words, the movable structure (62) is configured to arbitrarily adjust the distance (H3) (see FIG. 3) between the lower plate (62b) and the upper plate (61) by the operation of an actuator (63). The operation of the actuator (63) is controlled, for example, by a control unit (2). The adjustment range of the distance (H3) can be arbitrarily designed, but from the perspective of properly controlling the pressure of the plasma processing space (10s), it is preferable that the distance (H3) be adjustable between at least 5 and 50 mm. Accordingly, at least one actuator (63) is configured to move only the movable structure (62) in the vertical direction based on the pressure detected by the pressure detector (50). That is, at least one actuator (63) is configured to move the movable structure (62) in the vertical direction without moving the first annular plate (61). That is, the first annular plate (61) functions as a fixed annular plate, and the second annular plate (62b) of the movable structure (62) functions as a movable annular plate. By this, the distance (H3) between the first annular plate (61) and the second annular plate (62b) is changed.

[0051] Here, the upper plate (61) and the lower plate (62b) according to the present embodiment are arranged to form an annular overlap portion (OV) in which at least a portion of the diameter direction overlaps with respect to the exhaust direction (vertical direction in the illustrated example) in the exhaust path (10e), as shown in FIGS. 3 and 5. In other words, the upper plate (61) and the lower plate (62b) are arranged to form the annular overlap portion (OV) shown in FIGS. 3 and 5 (L3 <L1+L2가 된다), 각각의 폭(L1) 및 폭(L2)을 결정한다. 환상 중복 부분(OV)의 폭은 임의로 설계할 수 있지만, 예컨대 5∼10 mm로 설계해도 좋다. 일 실시형태에 있어서, 제2 환상 플레이트(62b)는, 제1 환상 플레이트(61)의 아래쪽에 배치되고, 제2 환상 중복 부분(62c)을 갖는다. 제2 환상 중복 부분(62c)은, 제1 환상 플레이트(61)의 일부(즉 제1 환상 중복 부분(61c)과 세로 방향으로 중복되어 있다. 따라서, 상측 플레이트(61)와 하측 플레이트(62b)의 환상 중복 부분(OV)은, 제2 환상 플레이트(62b)의 일부(즉 제2 환상 중복 부분(62c)와, 제1 환상 플레이트(61)의 일부(즉 제1 환상 중복 부분(61c)가, 세로 방향으로 중복된 부분이다.

[0052] In addition, at this time, the relationship between the width (L1) of the upper plate (61) and the width (L2) of the lower plate (62b) is not particularly limited; for example, either the width (L1) or the width (L2) may be larger, or the width (L1) and the width (L2) may be the same. However, from the perspective of properly adjusting the exhaust conductance, it is preferable that the width (L1) be larger than the width (L2) (L1 > L2).

[0053] The exhaust system (40) provided by the plasma treatment device (1) according to the present embodiment is configured as described above.

[0054] Here, in plasma processing performed using a conventional plasma processing device, it is necessary to supply processing gas or exhaust by an exhaust system over the entire interior of a plasma processing chamber including a plasma processing space and an exhaust path, and accordingly, a significant amount of time was required for pressure control of the plasma processing chamber (plasma processing space).

[0055] In this aspect, in the present embodiment, as described above, an upper plate (61) and a movable structure (62) (second pressure regulating mechanism (60)) that form an annular overlapping portion (OV) in at least a part of the diameter direction are placed in the exhaust path (10e), and the lower plate (62b) of the movable structure (62) is configured to be movable in a far-field direction relative to the upper plate (61). In addition, no openings are formed in these upper plate (61) and lower plate (62b). Because of this, the upper plate (61) and the lower plate (62b) act as a second pressure regulating valve by reducing the distance (H3) shown in FIG. 3.

[0056] In other words, by making the distance (H3) between the upper plate (61) and the lower plate (62b) smaller, the exhaust path (10e) downstream from the lower plate (62b) is separated from the plasma treatment space (10s), and the volume of the plasma treatment chamber (10) can be made similarly small. And, since the volume of the plasma treatment chamber (10) is reduced in this way, the time required for pressure control of the plasma treatment space (10s) can be shortened.

[0057] In addition, in the second pressure adjustment mechanism (60) according to the present embodiment, as described above, the lower plate (62b) is configured to be movable in a far-field direction relative to the upper plate (61), so that the amount of exhaust from the plasma processing space (10s) by the exhaust mechanism (43) can be arbitrarily adjusted, thereby making it possible to precisely control the internal pressure of the plasma processing space (10s). That is, since the amount of exhaust from the plasma processing space (10s) changes according to the size of the distance (H3) between the upper plate (61) and the lower plate (62b), the internal pressure of the plasma processing space (10s) can be appropriately controlled by adjusting the distance (H3) based on, for example, the measurement result by the pressure detector (50).

[0058] Specifically, for example, when the internal pressure of the plasma treatment space (10s) is lower than the set pressure, the lower plate (62b) is raised to reduce the distance (H3), thereby reducing the exhaust volume and thus increasing the internal pressure of the plasma treatment space (10s). Also, for example, when the internal pressure of the plasma treatment space (10s) is higher than the set pressure, the lower plate (62b) is lowered to increase the distance (H3), thereby increasing the exhaust volume and thus lowering the internal pressure of the plasma treatment space (10s).

[0059] In addition, at this time, by using the first pressure adjusting mechanism (42) placed at the bottom of the plasma processing chamber (10) in addition to the second pressure adjusting mechanism (60), the exhaust from the plasma processing space (10s) can be adjusted in two stages, thereby allowing for more precise control of the internal pressure of the plasma processing space (10s).

[0060] In addition, according to the plasma treatment device (1) of the present embodiment, in addition to exhaust from the distance (H3) between the upper plate (61) and the lower plate (62b), a small amount of continuous exhaust of the plasma treatment space (10s) is performed from the gap (C) formed between the cylindrical wall (62a) of the movable structure (62) and the side wall (102) of the plasma treatment chamber (10).

[0061] The inventors have conducted a thorough examination and found that if the plasma treatment space (10s) is exhausted only at the distance (H3) between the upper plate (61) and the lower plate (62b) without forming a gap (C) between the cylindrical wall (62a) of the movable structure (62) and the side wall (102) of the plasma treatment chamber (10), there is a concern that plasma treatment on the substrate (W) cannot be properly performed. Specifically, as shown in FIG. 6, it was found that when the distance (H3) between the upper plate (61) and the lower plate (62b) is small, the change in the internal pressure of the plasma treatment space (10s) (the value of the exhaust conductance in the example of FIG. 6) becomes large (rapid), and due to this pressure change, plasma treatment on the substrate (W) cannot be properly performed.

[0062] In this regard, in the exhaust system (40) of the plasma treatment device (1) according to the present embodiment, by performing continuous exhaust of a small amount of plasma treatment space (10s) from the gap (C), even if the distance (H3) between the upper plate (61) and the lower plate (62b) is reduced as shown in FIG. 6, the change in internal pressure becomes large (rapid), and plasma treatment on the substrate (W) can be properly performed.

[0063] In particular, according to the present embodiment, the width (L4) and length (H2) of the gap (C) are each defined so as not to affect the internal pressure of the plasma treatment space (10s) during plasma treatment. Specifically, the preferred width (L4) of the gap (C) is 2.0 mm or less as described above, and the preferred length (H2) is 10 mm to 60 mm as described above. By doing so, the internal pressure of the plasma treatment space (10s) is suppressed from changing rapidly due to constant exhaust from the gap (C), thereby allowing for appropriate plasma treatment results to be obtained for the substrate (W).

[0064] <Variation Example>

[0065] In addition, in the second pressure adjustment mechanism (60) of the above embodiment, the upper plate (61) is positioned on the side wall (11a) of the substrate support (11) and the movable structure (62) is positioned on the side wall (102) of the plasma processing chamber (10), but these arrangements are not limited to the above embodiment. That is, for example, as in the second pressure adjustment mechanism (200) shown in FIGS. 7 and 8, the upper plate (201) may be fixedly positioned on the side wall (102) of the plasma processing chamber (10) and the movable structure (202) may be positioned on the side wall (11a) of the substrate support (11). In this case, a gap (C) for constant ventilation of the plasma processing space (10s) is formed between the cylindrical wall (202a) of the movable structure (202) and the side wall (11a) of the substrate support (11). In other words, the lower plate (202b) of the movable structure (202) is installed integrally with the cylindrical wall (202a) so as to protrude from the upper end of the outer wall side (outer side in the radial direction) of the cylindrical wall (202a) toward the outer side (i.e., outer side in the radial direction) of the plasma processing chamber (10). That is, in the example illustrated in FIGS. 7 and 8, the fixed upper annular plate (201) is fixed to the side wall (102) of the plasma processing chamber (10) and extends horizontally inward from the side wall (102) of the plasma processing chamber (10). And, a first gap (G1') is formed between the fixed upper annular plate (201) and the side wall (11a) of the substrate support (11). Also, the movable structure (202) is positioned below the fixed upper annular plate (201). The movable structure (202) has a cylindrical wall (202a) and a lower annular plate (202b), which may be separate members or integrated. The cylindrical wall (202a) extends vertically along the side wall (11a) of the substrate support (11). A second gap (G2') is formed between the cylindrical wall (202a) and the side wall (11a) of the substrate support (11).The lower annular plate (202b) extends horizontally outward from the top of the cylindrical wall (202a). The lower annular plate (202b) has an annular overlap portion (62c) that overlaps vertically with the fixed upper annular plate (201). A third gap (G3') is formed between the lower annular plate (202b) and the side wall (102) of the plasma processing chamber (10). The actuator is configured to move the movable structure (202) in the vertical direction. The fixed upper annular plate (201) and the lower annular plate (202b) are annular, non-porous plate-type members that do not have openings.

[0066] Even in such cases, by adjusting the distance (H3) between the upper plate (201) and the lower plate (202b) based on the measurement result by the pressure detector (50), the internal pressure of the plasma processing space (10s) can be precisely controlled, and the time for the pressure control can be appropriately shortened. Accordingly, the first annular plate (201) may be fixed to the side wall (102) of the plasma processing chamber (10), and in this case, the movable structure (202) is positioned on the side wall (11a) of the substrate support (11) or near it.

[0067] In addition, in the second pressure adjusting mechanism (60) of the above embodiment, the upper plate (61) is positioned below the annular baffle plate (41) and the movable structure (62) is positioned below the upper plate (61), but these arrangements are not limited to the above embodiment. That is, for example, as in the second pressure adjusting mechanism (300) shown in FIG. 9, an L-shaped structure (302) that is approximately L-shaped may be fixedly positioned below the annular baffle plate (41), and a movable lower plate (301) may be positioned below the upper plate (302b) of the L-shaped structure (302). In this case, the L-shaped structure (302) includes a cylindrical wall (302a) arranged along the side wall (102) of the plasma processing chamber (10), and an upper plate (302b) installed integrally with the cylindrical wall (302a) so as to protrude toward the inner circumference of the plasma processing chamber (10) from the upper end of the inner wall side of the cylindrical wall (302a). In this case, a gap (C) for constant ventilation of the plasma processing space (10s) is formed between the cylindrical wall (302a) of the L-shaped structure (302) and the side wall (102) of the plasma processing chamber (10). In addition, in this case, the L-shaped structure (302) is fixedly positioned near the side wall (102) of the plasma processing chamber (10), and the movable lower plate (301) is fixedly positioned on the side wall (11a) of the substrate support (11). Furthermore, the movable lower plate (301) is configured to be movable in a far-field direction relative to the upper plate (302b) by means of an actuator (303).

[0068] Even in such cases, by adjusting the distance (H3) between the upper plate (201) and the lower plate (202b) based on the measurement result by the pressure detector (50), the internal pressure of the plasma processing space (10s) can be precisely controlled, and the time for the pressure control can be appropriately shortened. Accordingly, the L-shaped structure (302) may be fixed near the side wall (102) of the plasma processing chamber (10), and in this case, the first annular plate (301) is positioned to be movable in the vertical direction below the L-shaped structure (302), and also near the side wall (11a) of the substrate support (11).

[0069] Additionally, in the second pressure adjustment mechanism (300) illustrated in FIG. 9, an L-shaped structure (302) is positioned on the side wall (102) of the plasma processing chamber (10) and a movable lower plate (301) is positioned on the side wall (11a) of the substrate support (11), but these arrangements are not limited to the above embodiment. That is, for example, as in the second pressure adjustment mechanism (400) illustrated in FIG. 10, an L-shaped structure (402) having an approximately L-shape may be positioned on the side wall (11a) of the substrate support (11) and a movable lower plate (401) may be positioned on the side wall (102) of the plasma processing chamber (10). In this case, a gap (C) for constant ventilation of the plasma processing space (10s) is formed between the cylindrical wall (402a) of the L-shaped structure (402) and the side wall (11a) of the substrate support (11).

[0070] Even in such cases, by adjusting the distance (H3) between the upper plate (201) and the lower plate (202b) based on the measurement result by the pressure detector (50), the internal pressure of the plasma processing space (10s) can be precisely controlled, and the time for the pressure control can be appropriately shortened. Accordingly, the L-shaped structure (402) may be fixed near the side wall (11a) of the substrate support (11), and in this case, the first annular plate (401) is positioned to be movable in the vertical direction near the side wall (102) of the plasma processing chamber (10).

[0071] In addition, in the above embodiment, the position of the upper plate (61) is fixed relative to the position of the annular baffle plate (41), and the lower plate (62b) is configured to be movable in the far direction (vertical direction) relative to the position of the upper plate (61), but the configuration of the exhaust system is not limited to this. That is, although not illustrated, the lower plate (62b) may be fixed relative to the position of the annular baffle plate (41), and the upper plate (61) (movable structure (62)) may be configured to be movable between the annular baffle plate (41) and the lower plate (62b). In other words, the upper plate (61) (movable structure (62)) may be configured to be movable in the far direction relative to the lower plate (62b). Accordingly, at least one actuator (63) is configured to move only the first annular plate (61) in the vertical direction based on the pressure detected by the pressure detector (50). That is, at least one actuator (63) is configured to move the first annular plate (61) in the vertical direction without moving the L-shaped structure. By doing so, the distance (H3) between the first annular plate (61) and the second annular plate (62b) is changed. Even in this case, by adjusting the distance (H3) between the upper plate (61) and the lower plate (62b) based on the measurement result by the pressure detector (50), the internal pressure of the plasma processing space (10s) can be precisely controlled, and the time for the pressure control can be appropriately shortened.

[0072] Additionally, both the upper plate (61) and the lower plate (62b) (movable structure (62)) may be configured to be movable relative to each other in the direction of the vertical (vertical direction). Accordingly, at least one actuator (63) is configured to move the first annular plate (61) and the second annular plate in the vertical direction based on the pressure detected by the pressure detector (50). By doing so, the distance (H3) between the first annular plate (61) and the second annular plate (62b) is changed. Even in this case, by adjusting the distance (H3) between the upper plate (61) and the lower plate (62b) based on the measurement result by the pressure detector (50), the internal pressure of the plasma processing space (10s) can be precisely controlled, and the time for the pressure control can be appropriately shortened.

[0073] In addition, the structure of moving the upper plate (61) in the vertical direction instead of the approximately L-shaped movable structure (62) as described above is not limited to the second pressure adjusting mechanism (60) described above, but can be similarly applied to the second pressure adjusting mechanisms (200, 300, 400) shown in FIGS. 7 to 10. Accordingly, in any of the second pressure adjusting mechanisms (60, 200, 300, 400), the distance (H3) between the first annular plate and the second annular plate is configured to be freely adjustable by the operation of at least one actuator. Accordingly, a plasma processing apparatus according to an embodiment comprises a first annular plate disposed below an annular baffle plate, a second annular plate disposed in a longitudinally overlapping manner with a part of the first annular plate, a cylindrical wall disposed in a longitudinally overlapping manner along the side wall of a plasma processing chamber or a substrate support from a diameter-direction end of either the first annular plate or the second annular plate, and forming a gap between the side wall of the plasma processing chamber or the side wall of the substrate support, and at least one actuator that moves at least one of the first annular plate and the second annular plate in a relative longitudinal direction.

[0074] Plasma Treatment Method

[0075] Next, a plasma treatment method using a plasma treatment system configured as described above will be explained. In addition, the following description will be explained as an example in which the plasma treatment device (1) is equipped with a second pressure adjustment mechanism (60) shown in FIGS. 3 and FIGS. 4. In the plasma treatment device (1), any plasma treatment such as etching treatment, film formation treatment, or diffusion treatment is performed on a substrate (W).

[0076] In plasma treatment, first, a substrate (W) is transported into the plasma treatment chamber (10) and placed on a substrate support (11). Then, by supplying a DC voltage to an electrode in the electrostatic chuck, the substrate (W) is adsorbed and held in the electrostatic chuck by Coulomb force. In addition, after transporting the substrate (W) to the plasma treatment chamber (10), the inside of the plasma treatment chamber (10) is depressurized to a desired vacuum level by an exhaust system (40).

[0077] Next, a processing gas is supplied from the gas supply unit (20) to the plasma processing space (10s) through the central gas injection unit (13). Additionally, high-frequency power (HF) for plasma generation is supplied to the antenna (14) by the first RF generation unit (31a) to generate plasma from the processing gas within the plasma processing space (10s). Then, the desired plasma treatment is performed on the substrate (W) on the substrate support unit (11) by the action of the generated plasma. That is, plasma treatment is performed on the substrate (W) by exposing the generated plasma to the substrate (W). The internal pressure of the plasma processing chamber (10) during the plasma treatment is measured (detected) over time by the pressure detector (50).

[0078] Here, the internal pressure of the plasma processing chamber (10) is adjusted to a desired set pressure by supplying processing gas to the plasma processing space (10s). At this time, as described above, by making the distance (H3) between the upper plate (61) and the lower plate (62b) small, the upper plate (61) and the lower plate (62b) act as a second pressure regulating valve, so the volume of the plasma processing chamber (10) can be made similarly small, and accordingly, the internal pressure of the plasma processing chamber (10) can be controlled in a short time.

[0079] In addition, at this time, as described above, the plasma processing space (10s) is continuously exhausted by the gap (C) formed between the cylindrical wall (62a) of the movable structure (62) and the side wall (102) of the plasma processing chamber (10). By doing so, even if the distance (H3) between the upper plate (61) and the lower plate (62b) is reduced, the change in the internal pressure of the plasma processing chamber (10) can be suppressed.

[0080] In addition, as described above, in a plasma processing apparatus, it is important to precisely control the internal pressure of the plasma processing chamber (10) in order to properly perform plasma processing on the substrate (W). Therefore, in this embodiment, the distance (H3) between the upper plate (61) and the lower plate (62b) in the exhaust system (40) is controlled based on the internal pressure of the plasma processing chamber (10) measured by the pressure detector (50). Specifically, if the measurement result by the pressure detector (50) is lower than the set pressure for plasma processing, the lower plate (62b) is raised to reduce the distance (H3), thereby increasing the internal pressure of the plasma processing chamber (10). Furthermore, if the measurement result by the pressure detector (50) is higher than the set pressure for plasma processing, the lower plate (62b) is lowered to increase the distance (H3), thereby decreasing the internal pressure of the plasma processing chamber (10). Accordingly, the control unit (2) compares the pressure detected by the pressure detector (50) with a predetermined set pressure to determine whether the detected pressure is higher than the set pressure and / or lower. Then, the control unit (2) controls at least one actuator (63) so that the distance (H3) becomes longer when the detected pressure is higher than the set pressure, and the distance (H3) becomes shorter when the detected pressure is lower than the set pressure. For example, in the example of FIG. 3, the control unit (2) lowers the movable structure (62) when the detected pressure is higher than the set pressure, and raises the movable structure (62) when the detected pressure is lower than the set pressure.

[0081] When plasma treatment of the substrate (W) is completed, the supply of high-frequency power (HF) and high-frequency power (LF) from the RF power source (31) and the supply of treatment gas by the gas supply unit (20) are stopped. In addition, if high-frequency power (LF) was supplied during plasma treatment, the supply of said high-frequency power (LF) is also stopped. Subsequently, the treatment gas is exhausted from inside the plasma treatment chamber (10) by the exhaust system (40). Subsequently, the supply of heat transfer gas to the back side of the substrate (W) is stopped, and the adsorption holding of the substrate (W) by the electrostatic chuck is stopped.

[0082] The substrate (W) on which plasma treatment has been performed is then transported from the plasma treatment chamber (10) to an external device, such as a transport chamber, by a substrate transport mechanism not shown, and a series of plasma treatments on the substrate (W) is completed.

[0083] In addition, in the plasma treatment according to the above embodiment, the lower plate (62b) is appropriately moved based on the internal pressure of the plasma treatment chamber (10) measured by the pressure detector (50) during the plasma treatment, but the method of controlling the lower plate (62b) is not limited to this. For example, instead of feedback controlling the operation of the lower plate (62b) based on the internal pressure measured by the pressure detector (50) during the plasma treatment, the distance (H3) may be changed for each process based on the set pressure of various processes that are predetermined before the start of the plasma treatment.

[0084] The embodiments disclosed herein are illustrative in all respects and should not be considered restrictive. The embodiments described above may be omitted, substituted, or modified in various forms without departing from the scope and common sense of the appended claims.

[0085] For example, in the above embodiments, the plasma processing device (1) is described as including an inductively coupled plasma generating unit, but the configuration of the plasma generating unit is not limited to this. That is, by applying the technology of the present disclosure to various plasma processing devices that require a reduction in time due to pressure control, the time due to pressure control can be appropriately reduced.

[0086] Examples

[0087] Hereinafter, embodiments of the technology according to the present disclosure will be described, but the technology is not limited to the following embodiments.

[0088] The inventors measured the time required to control the internal pressure of the plasma processing chamber in each case: when the volume of the plasma processing chamber is similarly reduced by reducing the distance (H3) by the aforementioned second pressure adjustment mechanism (60) (Example), and when the volume of the exhaust path (10e) is included in the volume of the plasma processing chamber without including the second pressure adjustment mechanism (60) (Comparative Example).

[0089] Specifically, in each case of the example and the comparative example, a processing gas was supplied to the plasma processing space, and the time until the internal pressure of the plasma processing chamber was raised to a desired set pressure was measured.

[0090] FIG. 11 is an explanatory diagram schematically illustrating the results of the present embodiment, and is a graph showing the relationship between the flow rate of the processing gas supplied to the plasma processing chamber (horizontal axis) and the time required to reach the set pressure (vertical axis). In the present embodiment, the set pressure was set to 100 mT, and the supply flow rates of the processing gas were set to 100 sccm, 500 sccm, and 1000 sccm. In addition, in the figure, solid lines represent the embodiment, and dashed lines represent the comparative example.

[0091] As shown in FIG. 11, by controlling the internal pressure of the plasma processing chamber (10) while reducing the distance (H3) between the upper plate (61) and the lower plate (62b), it can be seen that the time required to reach the set pressure is shortened. Specifically, the inventors have examined the case and found that the time required to reach the set pressure in the embodiment can be shortened by approximately 30 to 40 percent compared to the case where the second pressure adjustment mechanism (60) is not included.

[0092] In addition, it was confirmed that the change in internal pressure of the plasma treatment chamber could be smoothed out by continuously exhausting from the gap (C) formed between the cylindrical wall (62a) and the side wall (102) of the plasma treatment chamber (10).

[0093] As can be seen from the above results, by arranging an upper plate (61) and a movable structure (62) that function as a second pressure regulating valve in the plasma processing device (1), the time required for pressure control of the plasma processing chamber (10) can be appropriately shortened. In addition, together with this, the change in internal pressure of the plasma processing chamber (10) is made gradual (suppressing the rapid change in internal pressure), thereby obtaining appropriate plasma processing results for the substrate (W). Explanation of the symbols

[0094] 1: Plasma processing device 10: Plasma treatment chamber 11: Substrate support 11a: Sidewall (of the substrate support) 41: Fantasy Baffle Plate 41a: opening 61: Upper plate 62: Movable structure 62a: Cylindrical wall 62b: Lower plate 63: Actuator 102: Sidewall (of the plasma treatment chamber) C: Gap OV: Fantasy overlapping part W: Substrate

Claims

Claim 1 In a plasma processing apparatus, the apparatus comprises: a plasma processing chamber; a substrate support member disposed within the plasma processing chamber; an annular baffle plate disposed to surround the substrate support member and having a plurality of openings; a fixed upper annular plate disposed below the annular baffle plate and extending outwardly from the side wall of the substrate support member toward the side wall of the plasma processing chamber, wherein a first gap is formed between the fixed upper annular plate and the side wall of the plasma processing chamber; a movable structure disposed below the fixed upper annular plate, wherein the cylindrical wall extending in a longitudinal direction along the side wall of the plasma processing chamber, wherein a second gap is formed between the cylindrical wall and the side wall of the plasma processing chamber; and a lower annular plate extending inwardly from the upper end of the cylindrical wall toward the side wall of the substrate support member, wherein the lower annular plate has an annular overlapping portion that overlaps in a longitudinal direction with the fixed upper annular plate, and a third annular plate between the lower annular plate and the side wall of the substrate support member A plasma processing apparatus comprising a movable structure having a lower annular plate having a gap formed therein, and an actuator configured to move the movable structure in a vertical direction. Claim 2 A plasma processing apparatus according to claim 1, further comprising a pressure detector for detecting pressure within the plasma processing chamber and a control unit configured to control the actuator to change the relative distance between the fixed upper annular plate and the movable structure based on the detected pressure. Claim 3 A plasma processing apparatus according to paragraph 2, wherein the control unit is configured to control the actuator to increase the distance when the detected pressure is higher than the set pressure, and to control the actuator to decrease the distance when the detected pressure is lower than the set pressure. Claim 4 A plasma treatment apparatus according to any one of claims 1 to 3, wherein the second gap is greater than 0 mm and less than or equal to 2.0 mm. Claim 5 A plasma processing device according to claim 4, wherein the annular overlapping portion has a width of 5 mm to 10 mm. Claim 6 A plasma processing apparatus according to claim 5, wherein the first gap is smaller than the width of the fixed upper annular plate and also larger than the second gap. Claim 7 A plasma processing apparatus according to claim 6, wherein the distance between the annular baffle plate and the fixed upper annular plate is 40 mm or more. Claim 8 A plasma processing apparatus according to claim 4, wherein the cylindrical wall has longitudinal dimensions of 10 mm to 60 mm. Claim 9 A plasma processing apparatus according to claim 4, wherein the width of the fixed upper annular plate is greater than the width of the lower annular plate. Claim 10 A plasma treatment apparatus according to claim 4, wherein the plasma treatment chamber has a volume of 50 L or more. Claim 11 A plasma processing apparatus according to claim 10, further comprising a pressure control valve configured to control the pressure within the plasma processing chamber, wherein the pressure control valve is selected from at least one of an Adaptive Pressure Control (APC) valve or a pocket valve. Claim 12 In a plasma processing apparatus, the apparatus comprises: a plasma processing chamber; a substrate support member disposed within the plasma processing chamber; an annular baffle plate disposed to surround the substrate support member and having a plurality of openings; a fixed upper annular plate disposed below the annular baffle plate and extending inwardly from the side wall of the plasma processing chamber toward the side wall of the substrate support member, wherein a first gap is formed between the fixed upper annular plate and the side wall of the substrate support member; a movable structure disposed below the fixed upper annular plate, wherein the cylindrical wall extending in a longitudinal direction along the side wall of the substrate support member, wherein a second gap is formed between the cylindrical wall and the side wall of the substrate support member; and a lower annular plate extending outwardly from the upper end of the cylindrical wall toward the side wall of the plasma processing chamber, wherein the lower annular plate has an annular overlapping portion that overlaps in a longitudinal direction with the fixed upper annular plate, and a third gap is formed between the lower annular plate and the side wall of the plasma processing chamber. A plasma processing apparatus comprising a movable structure having a lower annular plate formed thereon, and an actuator configured to move the movable structure in a vertical direction. Claim 13 A plasma processing apparatus according to claim 12, further comprising a pressure detector for detecting pressure within the plasma processing chamber and a control unit configured to control the actuator to change the relative distance between the fixed upper annular plate and the movable structure based on the detected pressure. Claim 14 A plasma processing apparatus according to claim 13, wherein the control unit is configured to control the actuator to increase the distance when the detected pressure is higher than the set pressure, and to control the actuator to decrease the distance when the detected pressure is lower than the set pressure. Claim 15 A plasma treatment apparatus according to any one of claims 12 to 14, wherein the second gap is greater than 0 mm and less than or equal to 2.0 mm. Claim 16 A plasma processing apparatus according to claim 15, wherein the above-mentioned annular overlapping portion has a width of 5 mm to 10 mm. Claim 17 A plasma processing apparatus according to claim 15, wherein the cylindrical wall has longitudinal dimensions of 10 mm to 60 mm. Claim 18 A plasma processing apparatus comprises: a plasma processing chamber; a substrate support member disposed within the plasma processing chamber; an annular baffle plate disposed to surround the substrate support member and having a plurality of openings; a first annular plate disposed below the annular baffle plate and extending outwardly from the side wall of the substrate support member toward the side wall of the plasma processing chamber, wherein a first gap is formed between the first annular plate and the side wall of the plasma processing chamber; a structure disposed below the first annular plate, wherein a cylindrical wall extending in a longitudinal direction along the side wall of the plasma processing chamber, wherein a second gap is formed between the cylindrical wall and the side wall of the plasma processing chamber; and a second annular plate extending inwardly from the upper end of the cylindrical wall toward the side wall of the substrate support member, wherein the second annular plate has an annular overlapping portion that overlaps in a longitudinal direction with the first annular plate, and a third gap is formed between the second annular plate and the side wall of the substrate support member. A plasma processing apparatus having a structure having a second annular plate, and at least one actuator configured to move at least one of the first annular plate and the structure in a longitudinal direction. Claim 19 A plasma processing apparatus comprising: a plasma processing chamber; a substrate support member disposed within the plasma processing chamber; an annular baffle plate disposed to surround the substrate support member and having a plurality of openings; a first annular plate disposed below the annular baffle plate; a second annular plate disposed in a longitudinal direction overlapping a part of the first annular plate; a cylindrical wall disposed longitudinally along the side wall of the plasma processing chamber or the side wall of the substrate support member from a diametric end of either the first annular plate or the second annular plate, and forming a gap of greater than 0 mm and less than or equal to 2.0 mm between the side wall of the plasma processing chamber or the side wall of the substrate support member; and at least one actuator for moving at least one of the first annular plate and the second annular plate in a relative longitudinal direction. Claim 20 A plasma processing method using a plasma processing apparatus comprising: a plasma processing chamber; a substrate support member disposed within the plasma processing chamber; an annular baffle plate disposed to surround the substrate support member and having a plurality of openings; a first annular plate disposed below the annular baffle plate, wherein the inner end of the first annular plate is fixed to the side wall of the substrate support member; a movable structure disposed below the first annular plate, wherein the movable structure comprises a cylindrical wall member disposed vertically along the side wall of the plasma processing chamber and forming a gap between the side walls of the plasma processing chamber; and a second annular plate disposed at the upper end of the inner wall of the cylindrical wall member and forming an annular overlapping portion by overlapping vertically with a part of the first annular plate; an actuator for moving the movable structure in a vertical direction; and a pressure detector for detecting pressure within the plasma processing chamber, the method comprising: (a) a process of performing plasma processing on a substrate supported by the substrate support member; (b) a process of detecting pressure within the plasma processing chamber; and (c) based on the detected pressure, moving the movable structure to the first annular plate A plasma treatment method comprising a process of moving in the vertical direction.

Images