TRIPLE BOND FUNCTIONAL GROUP-BASED DIELECTRIC THIN FILM structure AND ORGANIC THIN FILM TRANSISTOR INCLUDING THE SAME

Abstract

The present invention relates to a technology for controlling electrical properties by forming a dielectric thin film from a monomer containing a triple bond functional group through a chemical vapor deposition (CVD) process and functionalizing it through a click reaction. The dielectric thin film is used as a component of an oxide thin-film transistor and has advantages such as a high dielectric constant, low contact resistance, and applicability to flexible devices.

Description

Technology Field

[0001] The present invention relates to a dielectric thin film structure based on a triple bond functional group and an oxide transistor comprising the same. Background Technology

[0002] The development of high-dielectric constant (High-k, dielectric constant 4 or higher) dielectrics is essential for increasing the integration density of microelectronic devices such as transistors. Dielectrics can accumulate charge at the interface with semiconductors through dielectric polarization, and the capacitance of a dielectric is proportional to its area and dielectric constant, and inversely proportional to its thickness. However, as integration density increases and the dielectric area decreases, technical approaches such as reducing the dielectric thickness or increasing the dielectric constant are required to secure sufficient capacitance. Yet, if the dielectric thickness is reduced excessively, leakage current increases due to tunneling, leading to a problem where the dielectric's insulation properties deteriorate. To address this, various studies on increasing the dielectric constant are being reported.

[0003] Conventional dielectric materials are mostly composed of oxide-based inorganic materials. While they provide high dielectric constants, their rigid properties make them unsuitable for next-generation electronic devices that are flexible or stretchable. Next-generation electronic devices, which are expected to evolve into flexible and stretchable substrate forms, require flexible materials capable of maintaining stability even under such deformation. Polymer-based materials are promising candidates to meet these requirements, and the development of polymer materials with high dielectric constants is actively underway.

[0004] Conventional high-dielectric constant polymers are primarily designed by introducing polar functional groups into the polymer chains to induce high dielectric polarization. However, this method requires complex synthesis and purification processes, and since most polymer materials are manufactured using solution-based processes, it is difficult to form them uniformly in thin thicknesses, and there is a high probability of defects such as pinholes occurring at the interfaces. The problem to be solved

[0005] To overcome these limitations, the present invention proposes a vapor-phase process-based polymer dielectric technology. Specifically, the present invention aims to provide a technology that utilizes a monomer-based parylene thin film containing a triple bond functional group as a dielectric and controls dielectric properties by introducing a new functional group through a click reaction on the surface. means of solving the problem

[0006] The present invention provides a dielectric thin film structure comprising a substrate; a dielectric thin film including a triazole-based functional group deposited on the substrate; wherein the dielectric constant of the dielectric thin film is 4.0 or higher.

[0007] According to one aspect of the present invention, the dielectric thin film structure may be formed by a click reaction of a compound containing an azide group on a substrate on which a compound containing a triple bond functional group is deposited.

[0008] According to one aspect of the present invention, the monomer comprising the triple bond functional group may comprise a paracyclophane-based monomer comprising the triple bond functional group.

[0009] According to one aspect of the present invention, the monomer comprising the triple bond functional group may comprise 4-ethynyl[2,2]paracyclophane.

[0010] According to one aspect of the present invention, the compound containing the azide group is an organic compound containing the azide group, comprising an alkyl derivative, an aryl derivative, or an ether, ester, phosphate ester, or a biomolecule-derived compound, and the compound may be used alone or in combination of two or more.

[0011] According to one embodiment of the present invention, the thickness of the dielectric thin film may be 50 to 100 nm.

[0012] According to one embodiment of the present invention, the substrate may comprise one or more selected from metal, silicon wafer, polymer film and oxide semiconductor.

[0013] According to one aspect of the present invention, the deposition may be performed through a chemical vapor deposition (CVD) process.

[0014] According to one aspect of the present invention, an oxide thin film transistor may be provided comprising: the dielectric thin film structure; and a source electrode and a drain electrode located on the dielectric thin film and in contact with each of both sides of the dielectric thin film.

[0015] According to one aspect of the present invention, the organic semiconductor layer may be characterized by comprising an In-Ga-Zn-O (In2O3-Ga2O3-ZnO) oxide semiconductor layer.

[0016] According to one embodiment of the present invention, the source electrode and the drain electrode may be characterized by being formed of aluminum, gold, or silver. Effects of the invention

[0017] By introducing a new functional group to the surface through the click reaction of the present invention to induce an interfacial polarization effect, the dielectric constant of the dielectric could be increased to a level of approximately 4.5 to 7.0. This is an improvement of approximately 30 to 100% compared to existing organic dielectrics (dielectric constant 3.0 to 3.5).

[0018] In addition, the dielectric thin film breakdown voltage of the present invention can be maintained at approximately 3.2 MV / cm or higher, and has the advantage of ensuring stability even under high voltage conditions.

[0019] In addition, the dielectric thin film of the present invention, formed through a vapor phase process, forms a smooth and uniform interface without pinholes, thereby having a significant effect of reducing interface defects by more than 90% compared to conventional solution process-based polymer dielectrics. Brief explanation of the drawing

[0020] Figure 1 is a schematic diagram showing the click reaction process of a parylene dielectric and a diagram schematically illustrating the structure of a thin-film transistor fabricated using it as a dielectric. Figure 2 is an FT-IR graph of a Pa-E parylene thin film after the CVD process. Figure 3 is an NMR graph of 1H and 13C for the Pa-E monomer. Figure 4 is a diagram showing surface roughness data of polymer Pa-E deposited on aluminum (Al), IGZO, and silicon wafers (Si wafer). Figure 5 is a graph measured according to the dielectric constant of the dielectric of Example 1. Figure 6 is an AFM data image of the contact angle and roughness of Examples 1 to 5. Figure 7 is an image showing SEM cross-sections of the dielectric thin films of Examples 2 to 5. Figure 8 is a graph showing the dielectric constant and dissipation factor of the dielectric thin films of Examples 2 to 5 as a bias voltage. Figure 9 is a graph showing the relationship between the capacitance density and the electric field of the dielectric thin films of Examples 2 to 5. Figure 10 is a graph showing the current characteristics according to the gate voltage of a thin-film transistor to which the dielectric thin films of Examples 2 to 5 are applied. Figure 11 is a graph showing the relationship between the drain current (IDSI_{DS}IDS) and the drain voltage (Drain Voltage, VDSV_{DS}VDS) of a thin-film transistor with the dielectric thin films of Examples 2 to 5 applied. Specific details for implementing the invention

[0021] The present invention will be described in more detail below through specific examples or embodiments, including the attached drawings. However, the following specific examples or embodiments are merely references for the detailed description of the present invention and the present invention is not limited thereto and may be implemented in various forms.

[0022] Furthermore, unless otherwise defined, all technical and scientific terms have the same meaning as generally understood by one of the art to which the present invention pertains. The terms used in the description of the present invention are merely for the purpose of effectively describing specific embodiments and are not intended to limit the present invention.

[0023] Additionally, the singular form used in the specification and the appended claims may be intended to include the plural form unless specifically indicated otherwise in the context.

[0024] Furthermore, when it is stated that a part "includes" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.

[0025] In the present invention, a paracyclophane-based monomer refers to a monomer having a structure in which benzene rings are connected by alkylene bridges in a specific pattern, and each number (e.g., [2.2], [2.2.2]) indicates the number of alkylene bridges between the rings.

[0026] The present invention provides a dielectric thin film structure comprising a substrate; a dielectric thin film including a triazole-based functional group deposited on the substrate; wherein the dielectric constant of the dielectric thin film is 4.0 or higher.

[0027] The present invention relates to a substrate and a dielectric thin film structure having a dielectric thin film containing triazole-based functional groups deposited on the substrate. The dielectric thin film has the characteristic of having a dielectric constant of 4.0 or higher, which can be advantageous for optimizing electromagnetic properties and improving the transmission characteristics of electromagnetic waves by providing a high dielectric constant. In addition, the triazole-based functional groups can help increase the stability of the dielectric thin film and maintain physical properties even in high temperature and high humidity environments.

[0028] Specifically, the above-mentioned dielectric thin film structure is described.

[0029] In the present invention, the dielectric thin film structure may be formed by a click reaction of a compound containing an azide group on a substrate on which a compound containing a triple bond functional group is deposited.

[0030] The above click chemical reaction is a bonding method with high selectivity and efficiency, and a dielectric thin film can be formed through the reaction between an azide group and a compound containing a triple bond. The above click chemical reaction is usually Cu(I) - The process is carried out using a catalyst, which can minimize unnecessary by-products under reaction conditions and enable highly controlled thin film formation, but the catalyst is not limited to those that can be used in conventional click chemical reactions.

[0031] According to one aspect of the present invention, the monomer comprising the triple bond functional group may comprise a paracyclophane-based monomer comprising the triple bond functional group.

[0032] According to one embodiment of the present invention, the monomer comprising the triple bond functional group may include a paracyclophane-based monomer. The paracyclophane-based monomer has a characteristic triple bond structure, and this structure may have the characteristic of providing a very strong bonding force.

[0033] In particular, since paracyclophane-based monomers provide stability and high reactivity, they can react with azide groups after being deposited on a substrate to promote the formation of dielectric thin films.

[0034] The thin film layer derived from the above paracyclophane-based monomer can form a polymer network that possesses both structural flexibility and durability, thereby improving the electrical and mechanical properties of the finally formed dielectric thin film.

[0035] In addition, paracyclophane-based monomers can provide high dielectric constant properties, which enables dielectric thin films to exhibit excellent performance in high-frequency applications.

[0036] According to one embodiment of the present invention, the monomer comprising the triple bond functional group may include 4-ethynyl[2,2]paracyclophane, but is not limited thereto.

[0037] According to one aspect of the present invention, the compound containing the azide group may be an organic compound containing the azide group, and may include one or more selected from alkyl derivatives, aryl derivatives, ether derivatives, ester derivatives, phosphate ester derivatives, and derivatives of biomolecule-derived compounds.

[0038] Specifically, the alkyl derivative comprises an azide group at one end and an alkyl group at the other end, and the alkyl group may have 1 to 20 carbon atoms, preferably 3 to 15, preferably 5 to 10, but is not limited thereto.

[0039] For example, the above alkyl derivative may include one or more selected from 1-Azidohexane, 2-Azido-2-methylpropane (tert-Butyl azide), 1-Azido-2-phenylethane (Phenylethyl azide), and 1-Azidooctane, but is not limited thereto.

[0040] In addition, the allyl derivative has an azide group at one end and an aryl group at the other end, and the aryl group may have 6 or more carbon atoms, specifically 6 to 20, specifically 6 to 12, but is not limited thereto.

[0041] For example, the allyl derivative may include one or more selected from phenyl azide, benzyl azide, naphthyl azide, 1-(Azidomethyl)-4-methoxybenzene, and p-tolyl azide, but is not limited thereto.

[0042] In addition, the above ether derivative may refer to a functionalized polyether, and may refer to a polyether compound substituted with a special functional group (e.g., an azide group).

[0043] For example, the ether derivative may be any one of 25-Azido-2,5,8,11,14,17,20,23-octaoxapentacosane, 3-Azido-1,2-propane-diol-based polyether, 11-Azido-3,6,9-trioxaundecanoic acid and Polyethylene glycol azide (PEG-Azide), preferably 25-Azido-2,5,8,11,14,17,20,23-octaoxapentacosane, but is not limited thereto.

[0044] Derivatives of the above-mentioned biomolecule-derived compounds may refer to compounds in which the chemical structure or function is modified through chemical modification or the introduction of specific functional groups, based on a biomolecule as the basic framework.

[0045] Examples of derivatives of the above-mentioned biomolecule-derived compounds may include one or more selected from Biotin-PEG-azide, Alkyne-biotin azide, Biotinylated glycoside azide, Biotin-lipid azide, and Biotin-protein azide, but are not limited thereto.

[0046] According to one aspect of the present invention, the deposition may be performed through a chemical vapor deposition (CVD) process. The chemical vapor deposition (CVD) is a process in which a gaseous precursor reacts on a substrate to form a solid thin film, and it has the advantage of being able to precisely control the thickness, uniformity, and properties of the thin film. Since the reaction in the CVD process occurs in a high-temperature environment, the thin film adheres to the substrate and forms a strong bond. In the present invention, the dielectric thin film is formed using a CVD process, and the physical and chemical properties of the thin film can be optimized through appropriate process conditions.

[0047] The internal pressure of the deposition chamber in the above CVD process may be in the range of 50 mTorr or more and 100 mTorr or more as a lower limit, and 300 mTorr or less, 250 mTorr or less, and 200 mTorr or less as an upper limit, preferably 50 to 300 mTorr and preferably 100 to 200 mTorr, but is not limited thereto.

[0048] Through the above conditions, the thin film is deposited uniformly, and an optimal reaction can be achieved.

[0049] The above CVD apparatus may include a device for flowing a carrier gas to transfer the vaporized monomer to a pyrolysis device and a deposition chamber. At this time, the carrier gas may be an inert gas, for example, argon gas, but is not limited thereto.

[0050] The flow rate of the carrier gas above may be 10 sccm or more, 15 sccm or more, and 30 sccm or less, 25 sccm or less as a lower limit, preferably 10 to 30 sccm, preferably 15 to 25 sccm, but is not limited thereto.

[0051] The temperature of the pyrolysis zone in the above CVD process may be 450°C to 700°C, preferably 550°C to 600°C, but is not limited thereto.

[0052] The temperature of the deposition chamber in the above CVD process may be 50 to 100 ℃, preferably 60 to 90 ℃, and preferably 70 to 90 ℃, but is not limited thereto.

[0053] The substrate temperature in the above CVD process may be -10 to 20 ℃, preferably -5 to 15 ℃, preferably 0 to 10 ℃, but is not limited thereto.

[0054] The monomer sublimation temperature in the above CVD process may be 50°C or higher, 80°C or higher, 100°C or higher as a lower limit, 200°C or lower, 150°C or lower, 120°C or lower as an upper limit, preferably 50 to 120°C, preferably 100 to 150°C, and preferably 100 to 120°C, but is not limited thereto.

[0055] According to one embodiment of the present invention, the thickness of the dielectric thin film may be 20 nm or more, 30 nm or more, 40 nm or more, 50 nm or more, 500 nm or less, 400 nm or less, 300 nm or less, 200 nm or less, 100 nm or less, preferably 20 to 500 nm, preferably 50 to 100 nm, but is not limited thereto.

[0056] According to one embodiment of the present invention, the substrate may comprise one or more selected from metal, silicon wafer, polymer film and oxide semiconductor.

[0057] The present invention can provide an oxide thin film transistor comprising the above dielectric thin film structure.

[0058] Specifically, the present invention may provide an oxide thin film transistor comprising: the dielectric thin film structure; and a source electrode and a drain electrode located on the dielectric thin film and in contact with each of the two sides of the dielectric thin film.

[0059] The above dielectric thin film structure has been explained in detail previously, so it will be omitted here.

[0060] The source electrode and drain electrode may be located on opposite sides of the dielectric thin film, respectively, and can control the flow of current by forming an electrical contact with the organic semiconductor layer. The electrodes provide a path for current to flow through the organic semiconductor layer and can play an important role in determining the switching performance and current flow of the transistor. The material of the electrodes may be a highly conductive metal such as aluminum (Al), gold (Au), or silver (Ag), but is not limited thereto.

[0061] According to one aspect of the present invention, the organic semiconductor layer may include oxide semiconductors, and specifically, the oxide semiconductor material may be an indium oxide-based oxide, a gallium oxide-based compound, a zinc oxide-based compound, and a mixture thereof, preferably may include In-Ga-Zn-O (In2O3-Ga2O3-ZnO), but is not limited thereto.

[0062] The above dielectric thin film structure can exhibit excellent performance in various application fields, such as high-frequency electronic devices, high-speed communication devices, and high-performance semiconductor devices.

[0063] Additionally, the dielectric thin film structure of the present invention provides superior dielectric constant and stability compared to conventional dielectric thin films, and can play an important role in future next-generation electronic devices and high-speed communication systems.

[0065] The present invention will be explained in more detail below based on the following examples and comparative examples. However, the following examples and comparative examples are merely illustrative of the present invention and are not intended to limit the present invention.

[0067] [Pa-E Synthesis]

[0068] PPH₃ (19 mmol) and Dibromomethane (38 mmol) were dissolved in 30 mL of toluene and stirred at 95°C for 72 hours. After the reaction was complete, the mixture was cooled to room temperature, the resulting solid was filtered, washed with diethyl ether, and dried in an oven to obtain [Ph3PCH3Br] + Br - [Ph3PCH2Br] obtained above. + Br - (6.52 mmol) was dissolved in THF (35 mL), cooled to -78°C under a nitrogen atmosphere, and then KOtBu (17.3 mmol) was added and stirred for 1 hour. Afterward, 4-Formyl[2.2]paracyclophane (6.52 mmol) dissolved in THF (30 mL) was slowly added, and the mixture was raised to room temperature and stirred for an additional 3 hours. Subsequently, KOtBu (17.3 mmol) was added, and the mixture was stirred at 60°C for 3 hours. After cooling the reaction mixture to room temperature, it was extracted using diethyl ether, and 4-ethynyl[2.2]paracyclophane was synthesized through purification and separation processes.

[0070] [Example 1]

[0071] [Parylene deposition step]

[0072] Parylene deposition was performed using an ITS CVD machine, and a glass substrate was used. The coating conditions were 75 mg of the prepared Pa-E monomer, an internal pressure of 150 mTorr, an argon gas flow rate of 20 sccm, a solid sublimation temperature of 110°C, a pyrolysis zone temperature of 560°C, a chamber temperature of 80°C, and a deposition substrate temperature of 5°C. Under these conditions, thin film coating was performed for 3 hours, and the thin film thickness was measured to be approximately 100 nm.

[0074] [Thin-film transistor manufacturing]

[0075] Electrode deposition was performed using a thermal evaporator, and aluminum was used as the electrode material. The deposition process was carried out under high-temperature vacuum conditions, and the electrode thickness was uniformly formed to approximately 100 nm. For semiconductor deposition, an oxide semiconductor composed of an In-Ga-Zn-O (In2O3-Ga2O3-ZnO) mixture was used, and this mixture was deposited using a 2-source sputter system. The deposition was carried out in a reactive atmosphere, and the semiconductor thin film was deposited to a thickness of approximately 50 nm.

[0077] [Example 2]

[0078] [Parylene deposition step]

[0079] Parylene deposition was performed using an ITS CVD machine, and a glass substrate was used. The coating conditions were 75 mg of the prepared Pa-E monomer, an internal pressure of 150 mTorr, an argon gas flow rate of 20 sccm, a solid sublimation temperature of 110°C, a pyrolysis zone temperature of 560°C, a chamber temperature of 80°C, and a deposition substrate temperature of 5°C. Under these conditions, thin film coating was performed for 3 hours, and the thin film thickness was measured to be approximately 100 nm.

[0081] [Click Response Step]

[0082] The click reaction was prepared by adding Benzyl azide (Ba) and sodium ascrobate at concentrations of 1 mmol / L and 5 mmol / L, respectively, to 100 mL of a solution of distilled water and butanol mixed in a 2:1 volume ratio. Separately, a solution of Copper(II) sulfate hydrate dissolved in methanol at a concentration of 0.5 mmol / L was prepared, and the two solutions were mixed in a 1:1 volume ratio. A substrate with deposited parylene was immersed in the prepared mixed solution for 3 hours, and after the reaction, it was washed with distilled water to remove unreacted material and dried in a vacuum desiccator for 1 hour to remove residual moisture.

[0084] [Thin-film transistor manufacturing]

[0085] Electrode deposition was performed using a thermal evaporator, and aluminum was used as the electrode material. The deposition process was carried out under high-temperature vacuum conditions, and the electrode thickness was uniformly formed to approximately 100 nm. For semiconductor deposition, an oxide semiconductor composed of an In-Ga-Zn-O (In2O3-Ga2O3-ZnO) mixture was used, and this mixture was deposited using a 2-source sputter system. The deposition was carried out in a reactive atmosphere, and the semiconductor thin film was deposited to a thickness of approximately 50 nm.

[0087] [Example 3]

[0088] The procedure was carried out in the same manner as in Example 2, except that Aminopropyl azide (Aa) was used instead of Benzyl azide (Ba). The Aminopropyl azide (Aa) content was 1 mmol / L, the same as in Example 2.

[0090] [Example 4]

[0091] The procedure was carried out in the same manner as in Example 2, except that Trimethylsilyl azide (Ta) was used instead of Benzyl azide (Ba). The Trimethylsilyl azide (Ta) content was 1 mmol / L, the same as in Example 2.

[0093] [Example 5]

[0094] The procedure was carried out in the same manner as in Example 2, except that Biotin azide (Bioa) was used instead of Benzyl azide (Ba). The Biotin azide (Bioa) content was 1 mmol / L, the same as in Example 2.

[0096] In Figure 2, it was confirmed through NMR analysis that Pa-E containing a triple bond functional group was successfully synthesized from parylene (Parylene-N). In addition, in Figure 3, it was confirmed through FT-IR peaks that the triple bond functional group present in the monomer stage was maintained in the polymer state, which indicates that there was no loss of the functional group during the deposition process.

[0098] Figure 4 shows surface roughness data of the polymer Pa-E deposited on aluminum (Al), IGZO, and silicon wafers (Si wafer). Through this, it can be confirmed that the Pa-E polymer deposited via the CVD process maintains excellent surface flatness and uniformity on various substrates.

[0100] Figure 5 is a graph showing the dielectric constant and dissipation coefficient according to the bias voltage for the dielectric of Example 1. The dielectric constant of the examples remains constant even with voltage changes, demonstrating the stability and reliability of the dielectric, and the dissipation coefficient maintains a very low value, confirming that there is little electrical loss and the quality is high.

[0101] Figure 6 is an AFM image showing the contact angle and surface roughness data of the dielectrics used in Examples 1 to 5. As a result of the contact angle analysis, the contact angle of Pa-E with water before the click reaction was measured to be approximately 76.09 degrees, indicating moderate hydrophilicity. However, after the click reaction, the dielectrics into which each azide material (Ba, Aa, Ta, Bioa) was introduced showed different contact angle values ​​as their surface hydrophilicity was controlled. After the click reaction, the contact angles were measured as Ba: 73.49 degrees, Aa: 64.69 degrees, Ta: 75.09 degrees, and Bioa: 67.11 degrees, which demonstrates that the surface hydrophilicity was controlled through the click reaction.

[0102] In addition, surface roughness data confirmed by AFM analysis remained constant without significant change before and after the click reaction (in order of materials: (Example 2) 1.180 nm, (Example 3) 1.282 nm, (Example 4) 1.154 nm, (Example 5) 1.288 nm), which means that the click reaction proceeded only on the surface of the polymer film and did not impair the quality of the interface with the substrate. These results demonstrate that the click reaction effectively controls the properties of the dielectric surface while maintaining the structural and physical stability of the existing film.

[0104] Figure 7 shows SEM images of cross-sections of the dielectric thin films of Examples 2 to 5. The dielectric thin films were uniformly deposited through a CVD process, and a uniform thickness can be confirmed in the cross-sectional images. This indicates that high-quality dielectric films were formed.

[0106] Figure 8 shows a graph of the dielectric constant and dissipation coefficient of the dielectric thin films of Examples 2 to 5 measured according to the bias voltage. It can be seen that the dielectric constant of all examples is 4 or higher while the bias voltage varies up to 100 V; specifically, Examples 4 and 5 have a dielectric constant of 5 or higher, and Example 3 maintains a constant dielectric constant of 6 or higher, indicating high stability of the dielectric thin film. The dissipation coefficient maintains very low values ​​within the bias voltage range, such as 0.0077 for Example 2 (Ba), 0.008 for Example 3 (Aa), 0.0134 for Example 4 (Ta), and 0.0099 for Example 5 (Bioa), confirming that the dielectric thin film has low electrical loss and excellent electrical characteristics. In addition, the capacitance density is 40 nF / cm² for all examples. 2 It can be seen that the above is satisfied, and specifically, Example 2 is 42.45 nF / cm 2 , Example 3 is 59.37 nF / cm 2 , Example 4 is 50.647 nF / cm 2 and 50.291 nF / cm 2 It can be seen that it satisfies [the condition]. This result shows that the dielectric thin films of Examples 2 to 5 have stable and high-quality electrical properties.

[0108] Figure 9 is a graph showing the relationship between capacitance density and electric field in the dielectric thin films of Examples 2 to 5. All examples have a dielectric breakdown strength of 2.5 MV / cm or higher, and Aa (Example 3) and Bioa (Example 5) exhibit dielectric breakdown at 4.0 MV / cm and 4.35 MV / cm, respectively, and these two materials have relatively high dielectric breakdown strengths.

[0110] FIG. 10 is a graph showing the current characteristics according to the gate voltage of thin-film transistors to which the dielectric thin films of Examples 2 to 5 are applied. In all examples, the off-current at a gate voltage of 0 V is approximately 10 -11 It was maintained at a very low level A, and the On-current showed an increasing trend at a gate voltage of 10 V. In Example 2, the On-current was approximately 10 -5 It was measured as A, and Example 3 is approximately 1.5×10 -5 A showed the highest value. Examples 4 and 5 were approximately 1.2 × 10⁻⁶, respectively. -5 A and 1.1×10 -5 It was measured as A. In all embodiments, the On / Off ratio is 10 6 It demonstrated high performance by recording the above. This indicates that the dielectric thin film improved overall transistor performance by effectively increasing the transistor's on-current and maintaining a low off-current.

[0112] Figure 11 is a graph showing the relationship between drain current (IDS) and drain voltage (VDS) of thin-film transistors using dielectric thin films applied with Ba (Example 2), Aa (Example 3), Ta (Example 4), and Bioa (Example 5), showing the results of comparing current characteristics according to each click reaction material. It shows the output curve according to VGS (change in ID according to VD). At VGS = 10 V and VD = 20 V, each example showed a significant increase from 125 μA before the reaction to 143 (@Ba), 307 (@Aa), 200 (@Ta), and 194 (@Bioa) μA, respectively. Considering that the permittivity of Pa-E before the click response is 3.5 and the permittivity of each example is 4.8 (@Ba), 6.71 (@Aa), 5.73 (@Ta), and 5.68 (@Bioa), respectively, this result shows that a change in the dielectric constant of the dielectric has a significant effect on the transistor and can control its performance.

[0114] As described above, the present invention has been explained by specific details, limited embodiments, and drawings; however, this is provided merely to aid in a more comprehensive understanding of the invention, and the invention is not limited to the above embodiments. Those skilled in the art can make various modifications and variations from this description.

[0115] Accordingly, the scope of the present invention is not limited to the described embodiments, and all things equivalent to or having equivalent variations to the claims set forth below, as well as the claims set forth below, shall be considered to fall within the scope of the concept of the present invention.

Claims

Claim 1 A dielectric thin film structure comprising a substrate; and a dielectric thin film comprising a triazole-based functional group formed on the substrate, wherein the triazole-based functional group is formed by a click reaction of a compound comprising an azide group on the surface of a thin film formed by depositing a compound comprising a triple bond functional group on the substrate, and wherein the dielectric constant of the dielectric thin film is 4.0 or higher. Claim 2 delete Claim 3 delete Claim 4 A dielectric thin film structure according to claim 1, wherein the compound containing the triple bond functional group comprises 4-ethynyl[2,2]paracyclophane. Claim 5 A dielectric thin film structure according to claim 1, wherein the compound containing the azide group is an organic compound containing the azide group, comprising an alkyl derivative, an aryl derivative, or an ether, ester, phosphate ester, or a biomolecule-derived compound, and wherein the compound is used alone or in combination of two or more. Claim 6 A dielectric thin film structure according to claim 1, wherein the thickness of the dielectric thin film is 50 to 100 nm. Claim 7 A dielectric thin film structure according to claim 1, wherein the substrate comprises one or more selected from metal, silicon wafer, polymer film and oxide semiconductor. Claim 8 A dielectric thin film structure according to claim 1, wherein the deposition is deposited through a chemical vapor deposition (CVD) process. Claim 9 An oxide thin film transistor comprising: a dielectric thin film structure according to any one of claims 1, 4 to 8; a source electrode and a drain electrode located on the dielectric thin film and respectively contacting both sides of the dielectric thin film. Claim 10 In claim 9, the oxide thin film transistor is characterized by including an In-Ga-Zn-O (In2O3-Ga2O3-ZnO) oxide semiconductor layer. Claim 11 An oxide thin-film transistor according to claim 9, characterized in that the source electrode and the drain electrode are formed of aluminum, gold, or silver.

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