Electrostatic Chuck with Enhanced Surface Durability of an Emboss Layer and Method of Manufacturing the Same

Abstract

The present invention relates to an electrostatic chuck having a double-sealed coating structure capable of improving the problems of wear and plasma degradation in an embossing region formed on the surface of an upper dielectric layer of an electrostatic chuck, and a method for manufacturing the same. The method for manufacturing an electrostatic chuck according to the present invention is characterized by comprising the steps of: forming a dielectric layer on an electrode layer; forming a first coating layer on the surface of the dielectric layer; removing a portion of the surface of the dielectric layer to form an embossing layer having an uneven shape; and forming a second coating layer on the surface of the embossing layer through a deposition process.

Description

Technology Field

[0001] The present invention relates to an electrostatic chuck, and more specifically, to an electrostatic chuck that improves the surface durability of an embossed layer by preventing wear and deterioration of the embossed layer formed on the surface of the electrostatic chuck, and a method for manufacturing the same.

[0002] This invention is based on the support of the following national research and development project.

[0003] Project ID: 2410014276

[0004] Assignment No.: 20032589

[0005] Ministry Name: Ministry of Trade, Industry and Energy

[0006] Project Management Agency: Korea Institute of Industrial Technology Planning and Evaluation

[0007] Research Project Name: Materials and Components Technology Development Project

[0008] Project Title: Development of Temperature-Controlled Electrostatic Chuck Technology for 8th Generation Downward Deposition Sputter Equipment

[0009] Contribution rate: 1 / 1

[0010] Project Executing Organization Name: TTS Co., Ltd.

[0011] Research Period: January 1, 2026 – December 31, 2026 Background Technology

[0012] An electrostatic chuck (ESC) for semiconductor manufacturing is a component designed to stably adsorb and fix wafers in a vacuum or plasma environment. It is completed by sequentially forming an insulating layer, an electrode layer, and a dielectric layer on a metal body, performing a sealing process to seal the pores of the dielectric layer, and then undergoing polishing and embossing pattern formation processes.

[0013] In this case, because fine pores remain in the dielectric layer of the electrostatic chuck due to the characteristics of the ceramic material, problems such as cooling gas leakage, particle generation, and surface degradation caused by plasma may occur during the process. Accordingly, conventionally, the performance and durability of the electrostatic chuck have been improved by sealing the pores of the dielectric layer through a sealing treatment of the entire dielectric layer.

[0014] However, in the conventional electrostatic chuck manufacturing method, after the surface of the dielectric layer is pore-sealed, a polishing and emboss masking process is performed to finally form an embossed layer having an embossed pattern. In this process, the surface area of ​​the dielectric layer that was previously pore-sealed is removed, so the area where the embossed pattern is newly formed remains as an area where the pore-sealing treatment was not applied.

[0015] Accordingly, there was a problem in that the surface area of ​​the embossed layer containing micropores was exposed to the outside, causing rapid surface wear due to repeated friction with the wafer, and plasma penetrated through the exposed micropores of the embossed layer, thereby reducing corrosion resistance to plasma and lowering the durability of the electrostatic chuck. Prior art literature

[0016] Korean Patent Publication No. 10-1709969 (February 20, 2017) The problem to be solved

[0017] The technical problem to be solved by the present invention is to provide an electrostatic chuck and a method for manufacturing the same that can increase the durability and reliability of the electrostatic chuck by increasing the wear resistance of the embossing layer in contact with the substrate and preventing corrosion caused by plasma gas. means of solving the problem

[0018] The electrostatic chuck of the present invention for solving the above-mentioned technical problem comprises: a dielectric layer laminated on an electrode layer; a first coating layer formed on the dielectric layer; an embossed layer formed to have an uneven shape by removing a portion of the surface of the dielectric layer on which the first coating layer is formed; and a second coating layer formed on the surface of the embossed layer, wherein the second coating layer is formed through a deposition process.

[0019] The second coating layer can be formed along the uneven shape of the embossed layer.

[0020] The second coating layer may have a thickness of 10 nm to 150 nm.

[0021] The second coating layer can be formed through any one of the deposition processes of ALD, PE-ALD, CVD, and PE-CVD.

[0022] The second coating layer can be formed through a deposition process using any one of the precursors TMA, TEMAZr, ZTB, TTIP, and Y(EtCp)₃.

[0023] The second coating layer above can be formed from any one of the insulating oxide films of Y2O3, Al2O3, TiO2, ZrO2, and Y2O3-Al2O3.

[0024] Meanwhile, a method for manufacturing an electrostatic chuck according to an embodiment of the present invention comprises the steps of: forming a dielectric layer on an electrode layer; forming a first coating layer on the surface of the dielectric layer; removing a portion of the surface of the dielectric layer on which the first coating layer is formed to form an embossed layer having an uneven shape; and forming a second coating layer on the surface of the embossed layer, wherein the second coating layer is formed through a deposition process.

[0025] The second coating layer can be formed through any one of the deposition processes of ALD, PE-ALD, CVD, and PE-CVD.

[0026] The second coating layer can be formed through a deposition process using any one of the precursors TMA, TEMAZr, ZTB, TTIP, and Y(EtCp)₃.

[0027] The second coating layer above can be formed from any one of the insulating oxide films of Y2O3, Al2O3, TiO2, ZrO2, and Y2O3-Al2O3.

[0028] The second coating layer may have a thickness of 10 nm to 150 nm.

[0029] The temperature of the deposition process for forming the second coating layer may be 60°C to 350°C. Effects of the invention

[0030] According to the present invention, after forming an embossed layer that is in direct contact with a substrate on the surface of an electrostatic chuck, a secondary sealing treatment is performed on the embossed layer region through a deposition process. Consequently, the pores on the surface of the embossed layer, which were not sealed in the prior art, are densely sealed, thereby significantly reducing surface wear and effectively suppressing deterioration caused by plasma. As a result, the wear resistance and corrosion resistance of the embossed layer can be improved, and even when used for a long time in plasma process equipment, surface peeling and deterioration of the embossed layer are suppressed, thereby greatly improving the durability and reliability of the electrostatic chuck.

[0031] In addition, when performing a secondary sealing treatment on the embossed layer, a second coating layer having a nano-scale thickness can be formed by using deposition processes such as ALD, PE-ALD, and CVD to precisely follow the complex uneven shape of the embossed layer, thereby enabling the formation of a protective film with a uniform and dense structure over the entire embossed layer area having an uneven shape. Brief explanation of the drawing

[0032] FIG. 1 is a cross-sectional view illustrating an electrostatic chuck according to an embodiment of the present invention. FIG. 2 is a process diagram sequentially illustrating the manufacturing process of an electrostatic chuck according to an embodiment of the present invention. FIG. 3 is a flowchart sequentially illustrating a method for manufacturing an electrostatic chuck according to the present invention. Specific details for implementing the invention

[0033] The present invention provides a surface structure and sealing technology for an electrostatic chuck that fixes a substrate, such as a semiconductor wafer, display panel, or glass substrate, by electrostatic force in a semiconductor manufacturing process.

[0034] Conventional electrostatic chucks have a structure in which an insulating layer, an electrode layer, and a dielectric layer are sequentially formed on a metal body, and after performing a sealing treatment on the upper dielectric layer, the structure is completed through polishing and the formation of an embossed pattern.

[0035] However, conventionally, since the embossed pattern formed on the upper dielectric layer is formed after the sealing treatment of the upper dielectric layer surface is completed during the manufacturing process, the surface of the embossed pattern that comes into direct contact with the substrate remains as a porous structure to which the sealing treatment has not been applied. This unsealed embossed pattern area causes surface wear during the repeated loading and unloading of the substrate, and plasma particles easily penetrate into the pores, causing a decrease in plasma corrosion resistance, which has caused serious problems in terms of equipment reliability and process life.

[0036] The present invention is characterized by providing an electrostatic chuck structure and a manufacturing method that can significantly improve the performance stability and durability of equipment by suppressing deterioration of the surface of the embossed layer and increasing wear resistance, in order to solve the problems of the prior art. This is achieved by forming an embossed layer on the surface of an upper dielectric layer that has undergone a primary sealing process, and then performing a secondary sealing process on the embossed layer area through a deposition process to densely seal and coat the pores on the surface of the embossed layer.

[0037] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0038] FIG. 1 is a cross-sectional view showing the structure of an electrostatic chuck according to an embodiment of the present invention.

[0039] Referring to FIG. 1, an electrostatic chuck (100) according to an embodiment of the present invention includes a body (110) and an insulating layer (120), an electrode layer (130), a lower dielectric layer (140), and an upper dielectric layer (150) that are sequentially stacked on the body (110).

[0040] The body (110) may be made of a metal material such as aluminum alloy or stainless steel. The body (110) may include cooling channels, gas passages, structural support means, etc., which are not illustrated.

[0041] An insulating layer (120) is formed on the body (110). At this time, the surface of the body (110) may be treated by sandblasting or chemical etching to improve the adhesion of the insulating layer (120), and, if necessary, a primer or plasma pretreatment may be performed.

[0042] The insulating layer (120) serves as an electrical insulating layer between the body (110) and the electrode layer (130) and may be composed of alumina (Al2O3), a glass insulating film, or other ceramic insulating layer. The thickness of the insulating layer (120) may be formed to be tens to hundreds of micrometers.

[0043] An electrode layer (130) is formed on the upper part of the insulating layer (120). The electrode layer (130) is a major component that generates electrostatic force of the electrostatic chuck (100) and may be composed of copper (Cu), molybdenum (Mo), tungsten (W), titanium (Ti), aluminum (Al), or a conductive ceramic material.

[0044] The electrode layer (130) can be formed by forming a pattern of the electrode layer through a photolithography process after sputtering or by sintering after screen printing. The electrode pattern can be implemented as a monopolar or bipolar structure and can be designed in various shapes depending on the size and electrical characteristics of the substrate.

[0045] A lower dielectric layer (140) and an upper dielectric layer (150) are sequentially stacked on top of the electrode layer (130).

[0046] The lower dielectric layer (140) and the upper dielectric layer (150) use ceramic materials such as alumina, aluminum nitride (AlN), yttria (Y2O3), and zirconia (ZrO2), and can be laminated by plasma spraying, sintering, or deposition.

[0047] The lower dielectric layer (140) surrounds and protects the electrode layer (130). Since the electrode layer (130) is formed in the form of a very thin and flat metal layer, if a thick dielectric layer is formed directly on the electrode layer (130) by spraying or sintering, the electrode may be deformed or the electrode pattern may be disrupted. Therefore, the lower dielectric layer (140) is formed with a thickness of several hundred micrometers to several millimeters based on coarse particles to stably surround and protect the electrode layer (130).

[0048] An upper dielectric layer (150) is formed on the upper portion of the lower dielectric layer (140). The upper dielectric layer (150) is a portion that comes into direct contact with a substrate (not shown), and is formed based on fine particles to facilitate securing flatness for contact with the substrate.

[0049] The upper dielectric layer (150) requires a high density and microporous structure to prevent leakage of cooling gas, particle generation, and damage caused by plasma, but micropores are inevitably formed in spray methods or other ceramic coating methods. Therefore, after the upper dielectric layer (150) is formed, a first sealing treatment is performed to seal the micropores of the upper dielectric layer (150). Through this first sealing treatment, a first coating layer (160) is formed on the surface of the upper dielectric layer (150). At this time, resin penetration, sol-gel-based ceramic sealing layer formation, or ALD-based sealing layer formation methods may be used in the first sealing treatment.

[0050] The upper dielectric layer (150), on which the first coating layer (160) is formed through the first sealing process, undergoes a polishing process to ensure surface flatness. The polishing can be performed using methods such as CMP, fixed particle polishing, or diamond wheel polishing, and during this polishing process, the surface roughness (Ra) and flatness of the upper dielectric layer (150) can be adjusted to be suitable for substrate contact characteristics.

[0051] Next, an embossing masking process is performed based on the polished surface. In the embossing masking process, a surface area of ​​the upper dielectric layer (150) on which an embossing pattern of an uneven structure is to be formed is selectively exposed using a photoresist or a metal mask.

[0052] After the embossing masking process is completed, an embossed layer (170) having an uneven shape is formed on the surface area of ​​the upper dielectric layer (150) through plasma spraying, laser processing, or etching processes. This embossed layer (170) performs functions such as increasing the mechanical contact stability of the substrate and securing a passage for the discharge of cooling gas (helium gas).

[0053] However, since the embossed layer (170) region is in a state where a portion of the upper dielectric layer (150) that formed the first coating layer (160) has been removed through the first sealing treatment, the sealing treatment is not applied, and the pores remain exposed. These pores in the embossed layer (170) have a problem in that plasma particles can easily penetrate during the plasma process, and wear is accelerated due to repeated contact with the substrate.

[0054] Therefore, in order to solve this problem, in the present invention, after forming an embossed layer (170) on the upper dielectric layer (150), a separate re-coating layer (180) is formed by a secondary sealing process using a deposition method.

[0055] The second coating layer (180) may have an uneven shape, and this uneven shape may correspond to the uneven shape of the embossed layer (170). That is, the second coating layer (180) may be formed in a shape that follows the surface of the uneven shape of the embossed layer (170).

[0056] The second coating layer (180) can be formed using an ALD or PE-ALD process. By using such a deposition process, a shape that precisely follows the uneven shape of the complex embossed layer (170) is formed through atomic layer-level deposition, thereby forming a protective film with a dense structure over the entire area of ​​the embossed layer.

[0057] Additionally, the second coating layer (180) may be formed using CVD and PE-CVD processes. By using such deposition processes, it is possible to form a high-density protective film even at low temperatures through reaction activation via plasma.

[0058] At this time, TMA (Trimethylaluminum), TEMAZr (Tetrakis(dimethylamido)zirconium), ZTB (Zirconium tert-butoxide), TTIP (Titanium isopropoxide), Y(EtCp)3 (Yttrium tris(ethylcyclopentadienyl)), etc. may be used as metal precursors to form the second coating layer (180).

[0059] Additionally, the material for forming the second coating layer (180) may be formed from an insulating oxide film of any one of Al2O3, Y2O3, ZrO2, TiO2, or Y2O3-Al2O3. These materials have excellent plasma corrosion resistance and high surface hardness, making them very suitable for use as a sealing layer to protect the surface of the embossed layer (170).

[0060] The secondary sealing process for forming the second coating layer (180) can be performed at a temperature between 60°C and 350°C, taking into account the difference in the coefficient of thermal expansion between the metal body (110) and the upper dielectric layer (150), and preferably at a temperature between 60°C and 150°C. This temperature range is intended to minimize the possibility of cracking or peeling of the second coating layer (180) and provides high stability even in an actual equipment operating environment.

[0061] The thickness of the second coating layer (180) can be set within a range of approximately 10 nm to 150 nm. By forming the second coating layer (180) within this thickness range, it is possible to effectively perform the function of completely sealing the pores while simultaneously maintaining the pattern shape of the embossing layer (170). Since a coating that is excessively thick outside this thickness range may distort the embossing shape, and a coating that is excessively thin may lack a sealing effect, the above range is the most suitable.

[0062] The second coating layer (180) formed through such a deposition process follows the complex uneven shape of the embossed layer (170) exactly, so the shape of the protrusions, grooves, curves, etc., of the embossed surface is not deformed at all. This is very important for maintaining the functional shape of the embossed layer (170), and especially since the uniformity of cooling gas discharge and friction characteristics with the substrate are important factors that determine the performance of the electrostatic chuck in semiconductor process equipment, there is an advantage in being able to provide a sealing effect in the embossed pattern area while maintaining the original shape of the embossed pattern.

[0063] In addition, in the present invention, since the first sealing treatment for the upper dielectric layer (150) and the second sealing treatment for the embossed layer (170) are performed independently, optimal sealing characteristics can be imparted to each dielectric layer region. That is, since the upper dielectric layer (150) has many pores and is prone to deterioration by plasma, the pores are stabilized by the preceding first sealing treatment, and since the embossed layer (170) is formed at the final stage of the manufacturing process, the wear resistance of the embossed layer (170) region can be increased by forming a second coating layer (180) in the embossed layer (170) region through a separate second sealing treatment. The double sealing structure of the present invention has the advantage that the first coating layer (160) protects the surface of the upper dielectric layer (150) from plasma and the second coating layer (180) protects the embossed layer (170) region, thereby ensuring balanced durability of both the upper dielectric layer (150) and the embossed layer (170) with two protective films.

[0064] Due to the double sealing structure of the first coating layer (160) and the second coating layer (180) formed by such a method, the electrostatic chuck (100) of the present invention suppresses the deterioration of the surface of the embossed layer (170) even during a long-term plasma process, and significantly reduces wear caused by repeated contact with the substrate.

[0065] In addition, the second coating layer (180) effectively blocks the plasma reaction paper from penetrating into the embossed layer (170) during the process, thereby providing the effect of maintaining the performance stability of the equipment for a long time.

[0066] Hereinafter, the method for manufacturing an electrostatic chuck of the present invention having the above-described configuration will be explained in detail.

[0067] FIGS. 2 and FIGS. 3 are a process diagram and a flowchart sequentially showing the manufacturing process of an electrostatic chuck according to the present invention.

[0068] Referring to FIGS. 2 and 3, a method for manufacturing an electrostatic chuck according to an embodiment of the present invention comprises the steps of: forming an insulating layer (120) on the body (110) of the electrostatic chuck (S210); forming an electrode layer (130) on the insulating layer (120) (S220); forming a lower dielectric layer (140) on the electrode layer (130) (S230); forming an upper dielectric layer (150) on the lower dielectric layer (140) (S240); forming a first coating layer (160) on the surface of the upper dielectric layer (150) (S250); removing a portion of the surface of the upper dielectric layer (150) to form an embossed layer (170) having an uneven shape (S280); and forming a second coating layer (180) on the embossed layer (170) through a deposition process (S290).

[0069] In the step (S210) of forming the insulating layer (120), the insulating layer (120) is formed on the surface of the body (110) with a thickness of tens to hundreds of micrometers. At this time, the surface of the body (110) may be given a certain level of surface roughness through sandblasting or chemical etching to improve the adhesion of the insulating layer (120), and a primer or plasma pretreatment may be performed as needed.

[0070] Next, in the step (S220) of forming the electrode layer (130), an electrode layer (130) in the shape of a thin film pattern is formed on top of the insulating layer (120) through sputtering and photolithography processes. This electrode layer (130) may also be formed by sintering the electrode material after screen printing.

[0071] When the electrode layer (130) is formed, the lower dielectric layer (140) and the upper dielectric layer (150) are then sequentially stacked and formed on the electrode layer (130) (S230, S240).

[0072] The lower dielectric layer (140) and the upper dielectric layer (150) utilize ceramic materials such as alumina, aluminum nitride (AlN), yttria (Y2O3), and zirconia (ZrO2), and can be formed by stacking using plasma spraying, a sintering process, or a deposition process. These dielectric layers (140, 150) are formed with a thickness of several hundred micrometers to several millimeters.

[0073] Here, the upper dielectric layer (150) is formed based on fine particles to ensure flatness, as it is a part that comes into direct contact with the substrate. Since the upper dielectric layer (150) is a part exposed to the outside, micropores inevitably occur.

[0074] Accordingly, after forming the upper dielectric layer (150), a first sealing treatment is performed to seal the micropores of the upper dielectric layer (150). That is, the surface of the upper dielectric layer (150) exposed to the outside is subjected to a first sealing treatment to form a first coating layer (160) on the surface of the upper dielectric layer (S250).

[0075] In the primary sealing process for the surface of the upper dielectric layer (150), resin penetration, sol-gel-based ceramic sealing layer formation, or ALD-based dense film formation methods may be used.

[0076] When the first coating layer (160) is formed on the surface of the upper dielectric layer (150) through the first sealing process, the surface of the first coating layer (160) is polished to ensure the surface flatness of the upper dielectric layer (150) (S260).

[0077] Polishing of the first coating layer (160) may be performed using a CMP method, fixed particle polishing, or diamond wheel polishing, and during this process, the surface roughness (Ra) and flatness of the upper dielectric layer (150) can be appropriately adjusted to suit the substrate contact characteristics.

[0078] Next, based on the polished surface An embossing masking process is performed (S270). In the embossing masking process (S270), a surface area of ​​the upper dielectric layer (150) on which an embossing pattern is to be formed is selectively exposed using a photoresist or a metal mask.

[0079] After the embossing masking process (S270) is completed, an embossed layer (170) having an uneven shape is formed on the surface area of ​​the upper dielectric layer (150) through any one of the plasma spraying, laser processing, and etching processes (S280).

[0080] Since the embossed layer (170) region is in a state where a portion of the upper dielectric layer (150), which formed the first coating layer (160) through the preceding first sealing treatment, has been removed, the embossed layer formation region is not subjected to sealing treatment and remains in a state where the pores are exposed. Because of this, plasma particles can easily penetrate into the pores of the embossed layer (170) during the plasma process, and there is a problem that the upper surface of the embossed layer is accelerated to wear due to repeated contact with the substrate.

[0081] Accordingly, after forming an embossed layer (170) on the upper dielectric layer (150), a second coating layer (180) is formed to protect the embossed layer area by sealing the embossed layer (170) area through a deposition process (S290).

[0082] The second coating layer (180) can be formed using an Atomic Layer Deposition (ALD) or Plasma-Enhanced ALD (PE-ALD) process. By using such a process, the layer is formed by precisely following the uneven shape of the complex embossed layer (170) through precise deposition of a metal precursor at the atomic layer level, thereby enabling the formation of a protective film with a uniform and dense structure over the entire embossed layer region with the uneven shape.

[0083] Additionally, the second coating layer (180) may be formed using a Chemical Vapor Deposition (CVD) and Plasma-Enhanced CVD (PE-CVD) process. By using such a process, the metal precursor can be rapidly coated on the entire top surface, sidewalls, and bottom of the embossed surface by gas diffusion, and the plasma can increase the gas reactivity, making it possible to form a high-density protective film even at low temperatures.

[0084] At this time, TMA (Trimethylaluminum), TEMAZr (Tetrakis(dimethylamido)zirconium), ZTB (Zirconium tert-butoxide), TTIP (Titanium isopropoxide), Y(EtCp)3 (Yttrium tris(ethylcyclopentadienyl)), etc., may be used as metal precursors for forming the second coating layer (180). In addition, any one of Al2O3, Y2O3, ZrO2, TiO2, and Y2O3-Al2O3 may be used as a material for forming the second coating layer (180). These materials have excellent plasma corrosion resistance and high surface hardness, making them very suitable as sealing layers for protecting the surface of the embossed layer.

[0085] And the second sealing process (S290) for forming the second coating layer (180) can be performed at a temperature of 60°C to 350°C, taking into account the difference in the coefficient of thermal expansion between the metal body (110) and the upper dielectric layer (150) within the electrostatic chuck (100), and preferably at a temperature range of 60°C to 150°C. If the coating layer formation process is performed within this temperature range, the possibility of cracking or peeling of the second coating layer (180) can be minimized.

[0086] Additionally, the thickness of the second coating layer (180) is set within the range of approximately 10 nm to 150 nm. By forming the second coating layer (180) within this thickness range, the pores in the embossing layer (170) region can be completely sealed, and the pattern shape of the embossing layer (170) can be precisely maintained. That is, if the embossing layer (170) is coated too thickly outside the above thickness range, there is a risk of distorting the embossing shape, and if it is coated too thinly, the sealing effect of the embossing layer may be reduced; therefore, the above range is the most suitable.

[0087] Through the deposition process described above, the second coating layer (180) is formed by following the complex uneven shape of the embossing layer (170) exactly, so that the protrusions, grooves, curves, etc., of the embossing surface are not distorted at all. This is very important for maintaining the functional shape of the embossing layer (170). In particular, since the uniformity of cooling gas discharge and the friction characteristics with the substrate act as important factors determining the performance of the electrostatic chuck in semiconductor process equipment, forming the second coating layer (180) using the deposition process described above has the advantage of maintaining the embossing pattern in its original shape while achieving a dense sealing effect on the embossing pattern area.

[0088] In addition, in the present invention, optimal sealing characteristics can be provided to the entire area of ​​the dielectric layer by independently performing a primary sealing treatment on the upper dielectric layer (150) and a secondary sealing treatment on the embossed layer (170). That is, since the upper dielectric layer (150) has many pores and is exposed to the outside and is prone to deterioration by plasma, the pores of the dielectric layer can be sealed and stabilized through the primary sealing treatment, and a second coating layer (180) can be formed through the secondary sealing treatment on the embossed layer (170) area formed at the last stage of the manufacturing process to improve the sealing effect on the entire area of ​​the embossed layer (170) and increase wear resistance.

[0089] The electrostatic chuck (100) manufactured using the electrostatic chuck manufacturing method of the present invention described above forms a first coating layer (160) and a second coating layer (180) independently by sealing the surface of the upper dielectric layer (150) and the embossing layer (170) region exposed to the outside, respectively. As a result, the upper dielectric layer (150) has a double sealing structure formed by the first and second coating layers (160, 180), which suppresses the deterioration of the surface of the embossing layer (170) even during a long-term plasma process and significantly reduces wear of the embossing layer due to repeated contact with the substrate. Additionally, the second coating layer (180) effectively blocks plasma particles from penetrating into the embossing layer (170) during the process, thereby improving the performance stability and durability of the equipment.

[0090] In addition, in the present invention, the second coating layer (180) formed in the embossing layer (170) region is formed using a deposition process such as ALD, PE-ALD, CVD, or PE-CVD, thereby having the advantage of being able to precisely follow the complex uneven shape of the embossing pattern, which was difficult to implement with conventional spray coating methods, and to uniformly coat even the inside of the pores.

[0091] The above description is merely an illustrative explanation of the technical concept of the present invention, and those skilled in the art to which the present invention pertains will be able to make various modifications and variations within the scope of the essential characteristics of the present invention. Explanation of the symbols

[0092] 100: Electrostatic chuck 110: Body 120: Insulating layer 130: Electrode layer 140: Lower dielectric layer 150: Upper dielectric layer 160: First coating layer 170: Embossed layer 180: Second coating layer

Claims

Claim 1 An electrostatic chuck comprising: a dielectric layer laminated on an electrode layer; a first coating layer formed on the dielectric layer; an embossed layer formed to have an uneven shape by removing a portion of the surface of the dielectric layer on which the first coating layer is formed; and a second coating layer formed on the surface of the embossed layer, wherein the second coating layer is formed through a deposition process. Claim 2 In claim 1, the electrostatic chuck, wherein the second coating layer is formed along the uneven shape of the embossed layer. Claim 3 An electrostatic chuck according to claim 1, wherein the second coating layer has a thickness of 10 nm to 150 nm. Claim 4 In claim 1, the electrostatic chuck, wherein the second coating layer is formed through any one of the deposition processes of ALD, PE-ALD, CVD, and PE-CVD. Claim 5 An electrostatic chuck according to claim 1, wherein the second coating layer is formed through a deposition process using any one of the precursors TMA, TEMAZr, ZTB, TTIP, and Y(EtCp)3. Claim 6 In claim 1, the electrostatic chuck is formed of an insulating oxide film of any one of Y2O3, Al2O3, TiO2, ZrO2, or Y2O3-Al2O3. Claim 7 A method for manufacturing an electrostatic chuck, comprising: a step of forming a dielectric layer on an electrode layer; a step of forming a first coating layer on the surface of the dielectric layer; a step of removing a portion of the surface of the dielectric layer on which the first coating layer is formed to form an embossed layer having an uneven shape; and a step of forming a second coating layer on the surface of the embossed layer, wherein the second coating layer is formed through a deposition process. Claim 8 A method for manufacturing an electrostatic chuck according to claim 7, wherein the second coating layer is formed through a deposition process of any one of ALD, PE-ALD, CVD, and PE-CVD. Claim 9 A method for manufacturing an electrostatic chuck according to claim 7, wherein the second coating layer is formed through a deposition process using any one of the precursors TMA, TEMAZr, ZTB, TTIP, and Y(EtCp)3. Claim 10 A method for manufacturing an electrostatic chuck according to claim 7, wherein the second coating layer is formed of an insulating oxide film of any one of Y2O3, Al2O3, TiO2, ZrO2, or Y2O3-Al2O3. Claim 11 A method for manufacturing an electrostatic chuck according to claim 7, wherein the second coating layer has a thickness of 10 nm to 150 nm. Claim 12 A method for manufacturing an electrostatic chuck according to claim 7, wherein the temperature of the deposition process for forming the second coating layer is 60℃ to 350℃.

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