Substrate processing apparatus and method

Abstract

The present invention provides an apparatus for processing a substrate. The substrate processing apparatus comprises: a support unit for supporting and rotating a substrate; a nozzle for supplying a processing liquid to the substrate supported by the support unit; and a heating module for heating the substrate supported by the support unit and / or a liquid film formed by the processing liquid supplied to the substrate, wherein the heating module may include a heater array having an area smaller than that of the substrate and comprising a heater substrate and a plurality of heater cells provided to the heater substrate.

Description

Technology Field

[0001] The present invention relates to a substrate processing apparatus and method for processing a substrate using a processing solution. Background Technology

[0002] To manufacture semiconductor devices, various processes such as photolithography, etching, deposition, cleaning, and ion implantation are performed on a substrate, such as a wafer. As these processes are continuously and repeatedly executed on the substrate, a stacked structure composed of films of various materials is formed on the substrate.

[0003] Meanwhile, in order to form the above-mentioned stacked structure, a process of removing unnecessary films present on the substrate is required. This process can be achieved by supplying a processing solution, which can be called an etching solution or a stripping solution, to a rotating substrate. The problem to be solved

[0004] One objective of the present invention is to provide a substrate processing apparatus and method capable of efficiently processing a substrate.

[0005] In addition, the present invention has one objective of providing a substrate processing apparatus and method capable of improving the removal efficiency of a film on a substrate.

[0006] In addition, the present invention has one objective of providing a substrate processing apparatus and method capable of reducing the time required for film removal when removing a film using a processing solution.

[0007] The problems that the present invention aims to solve are not limited to those described above, and problems not mentioned will be clearly understood by those skilled in the art from this specification and the attached drawings. means of solving the problem

[0008] The present invention provides an apparatus for processing a substrate. The substrate processing apparatus comprises: a support unit for supporting and rotating a substrate; a nozzle for supplying a processing liquid to the substrate supported by the support unit; and a heating module for heating the substrate supported by the support unit and / or a liquid film formed by the processing liquid supplied to the substrate, wherein the heating module may include a heater array having an area smaller than that of the substrate and comprising a heater substrate and a plurality of heater cells provided to the heater substrate.

[0009] According to one embodiment, the heating module may further include a housing having an internal space in which the heater array is disposed; and a cover installed at the bottom of the housing.

[0010] According to one embodiment, the housing may be formed with a gas supply channel for supplying cooling gas to the internal space; and a gas discharge channel for discharging the cooling gas from the internal space.

[0011] According to one embodiment, the housing may be made of Teflon resin.

[0012] According to one embodiment, the cover may be manufactured from a silica material.

[0013] According to one embodiment, the heating module may further include a gas injection member installed at the bottom of the housing and forming positive pressure in the lower space of the housing.

[0014] According to one embodiment, the gas injection member has a discharge port formed in a direction inclined toward the cover, and the discharge port can supply gas to the lower space and / or the cover.

[0015] According to one embodiment, the nozzle and the heating module may be installed on separate arms.

[0016] According to one embodiment, the nozzle and the heating module may be installed on the same arm.

[0017] According to one embodiment, the nozzle and the heating module may be installed spaced apart in the horizontal direction.

[0018] According to one embodiment, the device may further include a heating plate installed below the heating module and heating the liquid film while at least a portion of the liquid film is immersed therein.

[0019] According to one embodiment, the heating plate may be installed spaced apart from the heating module in the up-down direction.

[0020] According to one embodiment, the heating plate may be provided with a ceramic material.

[0021] According to one embodiment, the heating plate may be provided with silicon carbide or aluminum nitride material.

[0022] In addition, the present invention provides a substrate processing method. The substrate processing method may include: a substrate heating step in which the heater array irradiates laser light to raise the temperature of the substrate to a set temperature; a liquid film forming step in which the nozzle supplies the processing liquid to the substrate, which has been heated to the set temperature, to form the liquid film; and a liquid film heating step in which the heater array irradiates the laser light to the liquid film to heat the liquid film.

[0023] According to one embodiment, in the substrate heating step, the substrate may be rotated at a first speed, and in the liquid film forming step and / or the liquid film heating step, the substrate may be rotated at a second speed different from the first speed.

[0024] According to one embodiment, the first speed may be faster than the second speed.

[0025] According to one embodiment, in the liquid film heating step, a heating plate installed on the lower side of the heating module is immersed in at least a portion of the liquid film, and the heating module transfers thermal energy to the heating plate so that the heating plate heats the liquid film.

[0026] According to one embodiment, the heating plate may be installed at a certain distance from the heating module. Effects of the invention

[0027] According to one embodiment of the present invention, a substrate can be processed efficiently.

[0028] In addition, according to one embodiment of the present invention, the removal efficiency of a film on a substrate can be improved.

[0029] In addition, according to one embodiment of the present invention, when removing a film using a treatment solution, the time required for film removal can be shortened.

[0030] The effects of the present invention are not limited to the effects described above, and unmentioned effects will be clearly understood by those skilled in the art from this specification and the attached drawings. Brief explanation of the drawing

[0031] FIG. 1 is a drawing showing the appearance of a substrate processing apparatus according to one embodiment of the present invention. Figure 2 is a perspective view of the heating module of Figure 1. Figure 3 is a cross-sectional view of the heating module of Figure 1. Figure 4 is a bottom view of the heating module of Figure 1. Figure 5 is a drawing showing a heater array of the heating module of Figure 1. FIG. 6 is a flowchart illustrating a substrate processing method according to one embodiment of the present invention. Figure 7 is a drawing showing the appearance of a substrate processing device performing the substrate heating step of Figure 6. Figure 8 is a drawing showing the appearance of a substrate processing device performing the liquid film holding step of Figure 6. Figure 9 is a drawing showing the appearance of a substrate processing device performing the liquid film heating step of Figure 6. FIG. 10 is a drawing showing the appearance of a substrate processing apparatus according to another embodiment of the present invention. FIG. 11 is a drawing showing the appearance of a substrate processing apparatus according to another embodiment of the present invention. Figure 12 is a diagram showing the heating of a substrate using the heating module of Figure 11. FIG. 13 is a drawing showing the appearance of a substrate processing apparatus according to another embodiment of the present invention. The various features and benefits of the non-limiting embodiments of this specification may become more apparent from a review of the detailed description in conjunction with the accompanying drawings. The accompanying drawings are provided for illustrative purposes only and should not be construed as limiting the claims. Unless expressly stated otherwise, the accompanying drawings are not to be drawn to scale. For clarity, various dimensions in the drawings may be exaggerated. Specific details for implementing the invention

[0032] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. Exemplary embodiments are provided to ensure that the present disclosure is thorough and will fully convey its scope to those skilled in the art. To provide a complete understanding of the embodiments of the present disclosure, many specific details, such as examples of specific components, devices, and methods, are presented. It will be apparent to those skilled in the art that specific details are not necessary, that exemplary embodiments may be implemented in many different forms, and that neither should be interpreted as limiting the scope of the present disclosure. In some exemplary embodiments, known processes, known device structures, and known technologies are not described in detail.

[0033] The terms used herein are merely for describing specific exemplary embodiments and are not intended to limit exemplary embodiments. Singular expressions or expressions where singularity is not specified, as used herein, are intended to include plural expressions unless the context clearly indicates otherwise. The terms “comprising,” “comprising,” “having,” and “having” are open-ended and thus specify the presence of the mentioned features, components, steps, operations, elements, and / or components, and do not exclude the presence or addition of one or more other features, components, steps, operations, elements, components, and / or groups thereof. Method steps, processes, and operations in this specification are not to be interpreted as necessarily being performed in the specific order discussed or described unless the order of performance is specified. Additionally, additional or alternative steps may be selected.

[0034] When an element or layer is referred to as being "on," "connected," "combined," "attached," "adjacent," or "covering" another element or layer, it may be directly on, connected to, combined with, attached to, adjacent to, or covering said other element or layer, or intermediate elements or layers may exist. Conversely, when an element is referred to as being "directly on," "directly connected to," or "directly combined" with another element or layer, it should be understood that intermediate elements or layers do not exist. Throughout the specification, the same reference numerals refer to the same elements. The term "and / or" as used in the present invention includes all combinations and non-combinations of one or more of the listed items.

[0035] Although terms such as first, second, third, etc., may be used to describe various elements, regions, layers, and / or sections in the present invention, it should be understood that these elements, regions, layers, and / or sections are not limited by these terms. These terms are used merely to distinguish one element, region, layer, or section from another element, region, layer, or section. Accordingly, the first element, first region, first layer, or first section discussed below may be referred to as the second element, second region, second layer, or second section without departing from the teachings of the exemplary embodiments.

[0036] Spatially relative terms (e.g., "below," "under," "lower," "above," "top," etc.) may be used for convenience of explanation to describe the relationship between one element or feature and another element(s) or feature(s) as illustrated in the drawings. It should be understood that spatially relative terms are intended to include not only the orientations illustrated in the drawings but also other orientations of the device in use or operation. For example, if the device in the drawings is inverted, elements described as "below" or "under" other elements or features will be oriented "above" other elements or features. Thus, the term "below" may include both upper and lower orientations. The device may be oriented differently (rotated 90 degrees or in a different orientation), and the spatially relative descriptive terms used in the present invention may be interpreted accordingly.

[0037] It should be understood that there may be some inaccuracy when the terms "identical" or "same" are used in the description of the embodiments. Therefore, if one element or value is referred to as identical to another element or value, it should be understood that said element or value is identical to another element or value within a manufacturing or operating tolerance (e.g., ±10%).

[0038] Where the words “approximately” or “substantially” are used in this specification with respect to figures, it should be understood that such figures include a manufacturing or operational tolerance (e.g., ±10%) of the figures mentioned. Additionally, where the words “generally” and “substantially” are used with respect to geometric forms, it should be understood that while geometric accuracy is not required, freedom of form (latitude) is within the scope of disclosure.

[0039] Unless otherwise defined, all terms used in the present invention (including technical and scientific terms) have the same meaning as generally understood by those skilled in the art to which the exemplary embodiments belong. Furthermore, terms, including those defined in commonly used dictionaries, should be interpreted as having a meaning consistent with that meaning in the context of the relevant technology, and should not be interpreted in an ideal or overly formal sense unless explicitly defined in the present invention.

[0040] FIG. 1 is a drawing showing the appearance of a substrate processing apparatus according to one embodiment of the present invention.

[0041] Referring to FIG. 1, a substrate processing device (10) according to one embodiment of the present invention may include a support unit (100), a bowl (200), a liquid supply unit (300), a heating unit (400), and a controller (not shown).

[0042] The support unit (100) can support and rotate the substrate (W). The support unit (100) can rotate the substrate (W) in a first direction (e.g., clockwise) or a second direction (e.g., counterclockwise) while the substrate (W) is being processed. The support unit (100) may include a chuck (110), a rotation axis (120), and a chuck actuator (130).

[0043] The chuck (110) can support and rotate the substrate (W). Support pins (111) and chuck pins (112) may be installed on the chuck (110). The support pins (111) can support the lower surface of the substrate (W). Multiple support pins (111) may be installed on the chuck (110). The support pins (111) may be configured to support the lower surface of the substrate (W) at regular intervals.

[0044] The chuck pin (112) may be configured to support the lower surface and side of the substrate (W). The chuck pin (112) may have a generally stepped shape on its upper surface so as to support the lower surface and side of the substrate (W). The chuck pin (112) may be configured to be movable in a horizontal direction. For example, the chuck pin (112) may be installed on the chuck (110) so as to be movable in a direction closer to or further away from the center of rotation of the chuck (110). A mechanical mechanism capable of moving the chuck pin (112) in a horizontal direction may be provided inside the chuck (110).

[0045] Multiple chuck pins (112) may be installed on the chuck (110). The chuck pins (112) may be installed on the chuck (110) at regular intervals in the circumferential direction.

[0046] The support pin (111) can fix the vertical position of the substrate (W) by supporting the lower surface of the substrate (W), and the chuck pin (112) can fix the horizontal position of the substrate (W) by supporting the side of the substrate (W).

[0047] The rotation axis (120) can be connected to the lower part of the chuck (110). The rotation axis (120) can rotate the chuck (110) by being connected to the lower part of the chuck (110). The rotation axis (120) is inserted into an opening formed in the central axis of the bowl (200) described later, and can be configured to be spaced apart from the opening at a certain distance.

[0048] The rotation axis (120) can be rotated by a chuck drive (130) which may be a servo motor. As the rotation axis (120) is rotated, the chuck (110) can be rotated, and the substrate (W) supported on the chuck (110) can be rotated in a first direction or a second direction.

[0049] The bowl (200) can provide a processing space where a substrate (W) is processed. The bowl (200) can be provided in the shape of a tub with an open top. The bowl (200) can be configured to be movable in the up-and-down direction by means of a lifting mechanism (not shown), such as a cylinder or a motor.

[0050] A drain line (DR) may be connected to the lower part of the bowl (200). The bowl (200) may include a bottom part to which the drain line (DR) is connected, a side part formed by extending upward from the bottom part, and an upper part formed by sloping upward from the side part toward the center of rotation of the chuck (100).

[0051] In the processing space provided by the bowl (200), while the substrate (W) is being processed, the processing liquid (L) supplied to the substrate (W) may be scattered from the substrate (W). The processing liquid (L) scattered from the substrate (W) can be collected by the bowl (200). The processing liquid (L) collected by the bowl (200) can be discharged to the outside of the substrate processing device (10) through the drain line (DR).

[0052] The liquid supply unit (300) may be configured to supply a processing liquid (L) to a substrate (W). The liquid supply unit (300) may be configured to supply a processing liquid (L) to a substrate (W) that is supported by a support unit (100) and rotates.

[0053] The treatment solution (L) supplied by the liquid supply unit (300) may be an etching solution or a stripping solution for removing a film on the substrate (W). For example, the treatment solution (L) may be an oxide etching solution, a resist stripping solution, or a nitride stripping solution. The treatment solution (L) may be provided as a chemical of a strong acid. In some cases, the treatment solution (L) may be a cleaning solution for cleaning foreign matter attached to the substrate (W). For example, the treatment solution (L) may be a cleaning solution such as deionized water or isopropyl alcohol. The type of treatment solution (L) is not limited to these and may be modified into various types of liquids used to treat the substrate (W).

[0054] The liquid supply unit (300) may include a nozzle (310), a nozzle arm (320), a nozzle shaft (330), and a nozzle mover (340).

[0055] The nozzle (310) may be configured to supply a processing liquid (L) to a substrate (W). The nozzle arm (320) is provided in a rod shape, with the nozzle (310) installed at one end and the other end connected to a nozzle shaft (330). The nozzle shaft (330) may extend in an upward and downward direction. The nozzle shaft (330) may be connected to a nozzle mover (340) so as to be rotated around a vertical axis and / or moved in a vertical direction.

[0056] By rotating and moving the nozzle axis (330) in the vertical direction, the nozzle arm (320) can be rotated or moved in the vertical direction. By this, the position of the nozzle (310) installed on the nozzle arm (320) can be freely changed from the center of the substrate (W) to the edge end of the substrate (W).

[0057] The heating unit (400) may be configured to heat the substrate (W) and the processing liquid (L). The heating unit (400) can improve the processing efficiency of the substrate (W) by heating the substrate (W) and / or the processing liquid (L). For example, the time required to remove a film (e.g., an oxide film, a resist film, or a nitride film, etc.) using the processing liquid (L) can be reduced.

[0058] The heating unit (400) may include a heating module arm (420), a heating module shaft (430), a heating module mover (440), and a heating module (500).

[0059] A heating module (500) may be configured to supply thermal energy (H) to a substrate (W). A heating module arm (420) may be provided in a rod shape, with the heating module (500) installed at one end and the other end connected to a heating module shaft (430). The heating module shaft (430) may extend in an upward and downward direction. The heating module shaft (430) may be connected to a heating module mover (440) so that it may rotate around a vertical axis and / or move in a vertical direction.

[0060] By rotating and moving the heating module axis (330) in the vertical direction, the heating module arm (420) can be rotated or moved in the vertical direction. By doing so, the position of the heating module (500) installed on the heating module arm (420) can be freely changed from the center of the substrate (W) to the edge end of the substrate (W).

[0061] The specific structure of the heating module (500) will be described later.

[0062] A controller (not shown) may be provided with a process controller comprising a microprocessor (computer) that executes control of the components of the substrate processing device (10), a user interface comprising a keyboard for which an operator performs command input operations to manage the substrate processing device, a display for visualizing and displaying the operating status of the substrate processing device, a control program for executing processing in the substrate processing device (10) under the control of the process controller, and a memory unit storing a program for executing processing in each component according to various data and processing conditions, i.e., a process recipe. Additionally, the user interface and the memory unit may be connected to the process controller. The processing recipe may be stored in a storage medium within the memory unit, and the storage medium may be a hard disk, a portable disk such as a CD-ROM or DVD, or a semiconductor memory such as flash memory.

[0063] FIG. 2 is a perspective view of the heating module of FIG. 1, FIG. 3 is a cross-sectional view of the heating module of FIG. 1, FIG. 4 is a bottom view of the heating module of FIG. 1, and FIG. 5 is a drawing showing a heater array of the heating module of FIG. 1.

[0064] Referring to FIGS. 2 through 5, the heating module (500) can generate thermal energy (H) to heat a substrate (W) and / or a processing liquid (L). The heating module (500) may include a housing (510), a cover (520), a heater array (530), and a gas injection member (540).

[0065] The housing (510) may provide an internal space (511). The housing (510) may be manufactured from a material having excellent corrosion resistance to the processing liquid (L). For example, the housing (510) may be manufactured from a material containing resin. For example, the housing (510) may be manufactured from a material containing Teflon resin. A heater array (530), described later, may be disposed in the internal space (511).

[0066] A gas supply channel (512) and a gas discharge channel (513) may be formed in the housing (510). The gas supply channel (512) may supply a cooling gas, such as an inert gas (e.g., nitrogen gas) or CDA (Clean Dry Air), to the internal space (511) from a first supply line (GL1), which is one of the lines branched from a main line (ML) connected to a gas supply source (GS). The supply flow rate of the cooling gas per unit time may be controlled by a first flow rate controller (FC1), which may be a regulator. Additionally, the gas discharge channel (513) may discharge the cooling gas supplied to the internal space (511) through a discharge line (FL) connected to a discharge device (P), such as a pump.

[0067] In short, the gas supply path (512) and the gas discharge path (513) can circulate cooling gas into the internal space (511) to prevent overheating of the heater array (530).

[0068] An opening may be formed in the lower part of the housing (510). A cover (520) may be installed in the opening. The cover (520) may be formed of a material having excellent transmittance to laser light irradiated by the heater array (530). For example, the cover (520) may be formed of a transparent or translucent material made of silica.

[0069] The cover (520) can seal the internal space (511) from the outside. During the process of processing the substrate (W), fumes may be generated by the reaction between the processing liquid (L) and the film on the substrate (W). The cover (520) can function as a barrier to prevent fumes from entering the internal space (511). This prevents the heater array (530) from being contaminated by fumes.

[0070] The heater array (530) can supply thermal energy (H) to heat the substrate (W) and / or the processing liquid (L). For example, the heater array (530) may include a heater substrate (531) and a plurality of heater cells (532). Each heater cell (532) may be configured to irradiate laser light. The laser light irradiated by the heater cells (532) may be light having a wavelength in the range of 960 to 1000 nm. Each heater cell (532) may be provided in a square or circular shape. That is, the heater array (530) may be a planar laser device having a planar laser array. Additionally, the heater array (530) may have an area smaller than that of the substrate (W).

[0071] A gas injection member (540) may be installed at the bottom of a housing (510). The gas injection member (540) may create positive pressure in the lower space (LS) of the housing (510). The gas injection member (540) may be provided in a rim shape. The gas injection member (540) may be provided in a pair. A gas discharge port (542) and a gas discharge path (543) may be formed in each of the pair of gas injection members (540). Each gas discharge path (543) may supply a cooling gas, such as an inert gas (e.g., nitrogen gas) or CDA (Clean Dry Air), from a second supply line (GL2) and a third supply line (GL3), which are either of the lines branched from the main line (ML), to the discharge port (542). The supply flow rate per unit time of the cooling gas discharged by the discharge port (542) can be controlled by a second flow rate controller (FC2) and a third flow rate controller (FC3), which may be regulators installed in the second supply line (GL) and the third supply line (GL3).

[0072] The discharge surface (541) of the gas injection member (540) can be formed at an angle toward the cover (520). By this, the discharge port (542) can be formed at an angle toward the cover (520). Positive pressure can be formed in the lower space (LS) by the cooling gas supplied from both sides by the discharge port (542). This prevents fumes generated by the processing liquid (L) from contaminating the cover (520). In addition, as described above, since the discharge port (542) is formed in a direction toward the cover (520), foreign substances such as some fumes that may be attached to the cover (520) can be removed from the cover (520) by the cooling gas.

[0073] In addition, as cooling gas is supplied in a direction toward the cover (520), the temperature of the internal space (511) can be prevented from overheating more effectively.

[0074] The discharge port (542) may be provided in multiple numbers and each may have a hole shape. However, alternatively, the discharge port (542) may be provided as a single long slit shape for each gas supply member (540).

[0075] FIG. 6 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention. The substrate processing method described below can be implemented by a controller controlling the components of a substrate processing device (10).

[0076] Referring to FIG. 6, a substrate processing method according to one embodiment of the present invention may include a substrate heating step (S10), a liquid film forming step (S20), and a liquid film heating step (S30). The substrate heating step (S10), the liquid film forming step (S20), and the liquid film heating step (S30) may be performed sequentially.

[0077] The substrate heating step (S10) may be a step of raising the temperature of the substrate (W) itself to increase the reactivity of the processing solution (L) to the substrate (W) (see FIG. 7). The substrate heating step (S10) may be performed before the supply of the processing solution (L) begins. In the substrate heating step (S10), thermal energy (H) may be transferred to the substrate (W) (i.e., laser light may be irradiated) as the position of the heating module (500) is moved from the center of the substrate (W) to the edge end of the substrate (W).

[0078] The substrate heating step (S10) can be performed until the substrate (W) reaches a set temperature. Whether the substrate (W) has reached the set temperature can be verified by equipping the substrate processing device (10) with a temperature sensor (not shown) capable of measuring the temperature of the substrate (W). Alternatively, temperature data of the substrate (W) that changes according to the heating time and operation of the substrate (W) can be obtained in advance through previously executed experimental data, and the heating time and operation of the heating module (500) to reach the set temperature can be pre-set as a process recipe. In the substrate heating step (S10), the substrate (W) can be rotated at a first speed. For example, the first speed may be faster than the second speed described later. In the substrate heating step (S10), the substrate (W) can be rotated rapidly to heat the substrate (W) uniformly.

[0079] In the liquid film formation step (S20), the liquid supply unit (300) may supply a processing liquid (L) to a rotating substrate (W) to form a liquid film (see FIG. 8). In the liquid film formation step (S20), the support unit (100) may rotate the substrate (W) and the nozzle (310) may be positioned above the center of the substrate (W) to supply the processing liquid (L) to the substrate (W). To maintain the formed liquid film, the nozzle (310) may continue to supply the processing liquid (L) until the liquid film heating step (S30) described later.

[0080] In the liquid film heating step (S30), the nozzle (310) supplies the processing liquid (L), and the heating module (500) supplies thermal energy (H) to the substrate (W) and / or the processing liquid (L) to heat the processing liquid (L) and / or the substrate (W). The supply of thermal energy (H) can be continuous until the supply of the processing liquid (L) is stopped. In the liquid film heating step (S30), the temperature of the processing liquid (L) can be raised to a target temperature and maintained. As the substrate (W) and / or the processing liquid (L) are heated, the reactivity between the processing liquid (L) and the film to be removed on the substrate (W) (e.g., resist film, oxide film, nitride film, etc.) can be increased. This can shorten the time required to remove the film from the substrate (W) and improve the processing efficiency for the substrate (W).

[0081] In the liquid film formation step (S20) and the liquid film heating step (S30), the substrate (W) can be rotated at a second speed different from the first speed, for example, slower than the first speed. By rotating the substrate (W) at a slow speed, the residence time of the processing liquid (L) on the substrate (W) is increased, and the residence time of the heated processing liquid (L) on the substrate (W) can be increased. That is, since the residence time of the heated processing liquid (L) on the substrate (W) is increased, the efficiency of processing the substrate (W) can be further increased. In addition, if a heater array of the same size or larger than the substrate (W) is used, heat loss may occur as not only the substrate (W) but also other device components around the substrate (W) are heated. However, by using a heater array (530) smaller than the substrate (W) to heat the substrate (W), heating of the substrate (W) can be performed locally and intensively.

[0082] In the example described above, the heating module (500) and the nozzle (310) are installed on separate arms, but this is not limited thereto. For example, as shown in FIG. 10, the heating module (500) and the nozzle (310) may be installed on a single nozzle arm (320). The heating module (500) may be installed on a second fixed arm (360) installed at the end of the nozzle arm (320), and the nozzle (310) may be installed on a first fixed arm (350) installed at the end of the nozzle arm (320).

[0083] At this time, the nozzle (310) and the heating module (500) may be installed spaced apart in the horizontal direction so that the laser light emitted by the heating module (500) is not emitted onto the nozzle (310).

[0084] In the example described above, the laser light irradiated by the heating module (500) is described as being irradiated directly onto the substrate (W) and / or the processing liquid (L), but is not limited thereto. For example, as shown in FIG. 11, the substrate processing device (10) may further include a fixing member (551) and a heating plate (550).

[0085] In order to effectively transfer the thermal energy (H) supplied by the heater array (530) to the substrate (W), if the heating module (500) is positioned adjacent to the substrate (W), the heating module (500) may be contaminated by fumes. Accordingly, in another embodiment of the present invention, a heating plate (550) is provided, and when performing a processing process on the substrate (W), as shown in FIG. 12, at least a portion of the heating plate (550) may be immersed in the processing liquid (L), and the heating module (500) may be sufficiently separated from the processing liquid (L). For example, the upper part of the heating plate (550) may not be immersed in the processing liquid (L), and only the lower part may be immersed in the processing liquid (L). The thermal energy (H) of the heating module (500) raises the temperature of the heating plate (550), and the heating plate (550) may heat the substrate (W) and / or the processing liquid (L). Since the heating module (500) is located far from the substrate (W), contamination of the heating module (500) can be minimized.

[0086] Additionally, when the heating module (500) transfers thermal energy (H) to the treatment liquid (L), the treatment liquid (L) that has received the thermal energy (H) is immediately ejected from the substrate (W). The heating plate (550) can maintain a state of retaining the thermal energy (H) (i.e., a heated state), thereby further improving the heating efficiency for the substrate (W) and / or the treatment liquid (L). The heating plate (550) may be provided with a ceramic material having chemical resistance to strong acids. For example, the heating plate (550) may be provided with silicon carbide (SiC) or aluminum nitride (AlN) material.

[0087] In the example described above, the heating plate (550) is installed on an arm separate from the nozzle (310), but this is not limited thereto. For example, as shown in FIG. 13, the heating plate (550) may be installed on the same arm as the nozzle (310).

[0088] It should be understood that exemplary embodiments are disclosed herein and that other variations may be possible. Individual elements or features of a particular embodiment are generally not limited to that particular embodiment, but may be interchangeable and used in selected embodiments where applicable, even if not specifically illustrated or described. Such variations should not be construed as departing from the spirit and scope of the present disclosure, and all such variations that are obvious to a person skilled in the art are intended to be included within the scope of the following claims. Explanation of the symbols

[0089] Substrate processing device: 10 Support Units: 100 Chuck: 110 Support pin: 111 Chuck pin: 112 Rotation axis: 120 Chuck Actuator: 130 Paul: 200 Processing space: 201 Drain Line: DR Liquid supply unit: 300 Nozzle: 310 Nozzle Arm: 320 Nozzle axis: 330 Nozzle mover: 340 1st fixed arm: 350 Second fixed arm: 360 Heating unit: 400 Heating module arm: 420 Heating module axis: 430 Heating module mover: 440 Heating module: 500 Housing: 510 Interior space: 511 Gas supply Euro: 512 Gas emission Euro: 513 Cover: 520 Heater Array: 530 Heater board: 531 Heater Cell: 532 Gas injection component: 540 Discharge surface: 541 Discharge port: 542 Gas discharge path: 543 Heating plate: 550 Fixing member: 551 Gas Source: GS Main Line: ML Supply Line 1: GL1 Second supply line: GL2 Third supply line: GL3 First flow controller: FC1 Second flow controller: FC2 Third flow controller: FC3 Lower space: LS Gas: G Discharge device: P Discharge Line: EL

Claims

Claim 1 A substrate processing apparatus comprising: a support unit for supporting and rotating a substrate; a nozzle for supplying a processing liquid to the substrate supported by the support unit; and a heating module for heating a liquid film formed by the substrate supported by the support unit and / or the processing liquid supplied to the substrate, wherein the heating module comprises a heater array having an area smaller than that of the substrate and comprising a heater substrate and a plurality of heater cells provided to the heater substrate, and the heating module further comprises a housing having an internal space in which the heater array is disposed; and a cover installed at the bottom of the housing, wherein the housing comprises a gas supply channel for supplying a cooling gas to the internal space; and a gas discharge channel for discharging the cooling gas from the internal space. Claim 2 delete Claim 3 delete Claim 4 In claim 1, the housing is a substrate processing device made of Teflon resin. Claim 5 In claim 1, the above cover is a substrate processing device made of silica material. Claim 6 A substrate processing device according to claim 1, wherein the heating module is installed at the bottom of the housing and further comprises a gas injection member that forms positive pressure in the lower space of the housing. Claim 7 In claim 6, the gas injection member has a discharge port formed in a direction inclined toward the cover, and the discharge port supplies gas to the lower space and / or the cover, a substrate processing device. Claim 8 A substrate processing device according to any one of claims 1 and 4 through 7, wherein the nozzle and the heating module are installed on separate arms. Claim 9 A substrate processing device according to any one of claims 1 and 4 to 7, wherein the nozzle and the heating module are installed in the same arm. Claim 10 A substrate processing device according to any one of claims 1 and 4 to 7, wherein the nozzle and the heating module are installed spaced apart in the horizontal direction. Claim 11 A substrate processing apparatus comprising: a support unit for supporting and rotating a substrate; a nozzle for supplying a processing liquid to the substrate supported by the support unit; a heating module for heating a liquid film formed by the substrate supported by the support unit and / or the processing liquid supplied to the substrate; and a heating plate installed below the heating module and heating the liquid film with at least a portion immersed in the liquid film, wherein the heating module comprises a heater array which is a planar laser device having an area smaller than that of the substrate and including a heater substrate and a plurality of heater cells provided to the heater substrate. Claim 12 In claim 11, the substrate processing device wherein the heating plate is installed spaced apart from the heating module in the up-down direction. Claim 13 In claim 11, the above heating plate is provided with a ceramic material, a substrate processing device. Claim 14 In claim 11, the heating plate is provided with silicon carbide or aluminum nitride material, in a substrate processing device. Claim 15 A method for processing a substrate using a substrate processing device, wherein the substrate processing device comprises: a support unit for supporting and rotating a substrate; a nozzle for supplying a processing liquid to the substrate supported by the support unit; and a heating module for heating a liquid film formed by the substrate supported by the support unit and / or the processing liquid supplied to the substrate, wherein the heating module comprises a heater array which is a planar laser device having an area smaller than that of the substrate and comprising a heater substrate and a plurality of heater cells provided to the heater substrate, and the method comprises: a substrate heating step in which the heater array irradiates laser light to raise the temperature of the substrate to a set temperature; a liquid film forming step in which the nozzle supplies the processing liquid to the substrate whose temperature has been raised to the set temperature to form the liquid film; and a liquid film heating step in which the heater array irradiates the laser light to the liquid film to heat the liquid film, wherein the liquid film heating step comprises immersing at least a portion of a heating plate installed on the lower side of the heating module into the liquid film, and the heating module transfers thermal energy to the heating plate so that the heating plate heats the liquid film. Claim 16 A substrate processing method according to claim 15, wherein the substrate is rotated at a first speed in the substrate heating step, and the substrate is rotated at a second speed different from the first speed in the liquid film forming step and / or the liquid film heating step. Claim 17 A substrate processing method according to claim 16, wherein the first speed is faster than the second speed. Claim 18 delete Claim 19 A substrate processing method according to claim 15, wherein the heating plate is installed at a certain distance from the heating module.

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