Nanorod light emitting device, method of manufacturing the same, and display apparatus including the same

Abstract

A nanorod light-emitting device with improved luminous efficiency by reducing surface defects is disclosed. The disclosed nanorod light-emitting device comprises: a semiconductor light-emitting structure having a nanorod shape; and a passivation film surrounding the sidewall of the semiconductor light-emitting structure and having insulating properties; wherein the passivation film may include an insulating crystal material having the same crystal structure as the crystal structure of the semiconductor light-emitting structure.

Description

Technology Field

[0001] The disclosed embodiments relate to a nanorod light-emitting device with improved luminous efficiency and a method for manufacturing the same. Additionally, the disclosed embodiments relate to a display device comprising a nanorod light-emitting device. Background Technology

[0002] Light-emitting diodes (LEDs) are known as next-generation light sources that offer advantages such as a long lifespan, low power consumption, fast response speed, and environmental friendliness compared to conventional light sources, and industrial demand is increasing due to these advantages. LEDs are commonly applied and used in various products, such as lighting devices and backlights for display devices.

[0003] Recently, micro- or nano-sized ultra-small LEDs using II-VI or III-V compound semiconductors are being developed. In addition, micro LED displays are being developed in which these ultra-small LEDs are directly applied as light-emitting elements of display pixels. However, when LEDs are miniaturized to the micro or nano scale in this way, the luminous efficiency of the LED may decrease due to surface defects. The problem to be solved

[0004] We provide a nanorod light-emitting device with improved luminous efficiency by reducing surface defects.

[0005] In addition, a method for manufacturing nanorod light-emitting devices to reduce surface defects is provided.

[0006] In addition, a display device including a nanorod light-emitting element is provided. means of solving the problem

[0007] A nanorod light-emitting device according to one embodiment comprises: a semiconductor light-emitting structure having a nanorod shape; and a passivation film surrounding the sidewall of the semiconductor light-emitting structure and having insulating properties; wherein the passivation film may include an insulating crystal material having the same crystal structure as the crystal structure of the semiconductor light-emitting structure.

[0008] The above passivation film may have a lattice-matched epitaxy relationship or a domain-matched epitaxy relationship with the semiconductor light-emitting structure.

[0009] In one example, the difference between the lattice constant of the passivation film and the lattice constant of the semiconductor light-emitting structure may be within ±30% of the lattice constant of the semiconductor light-emitting structure.

[0010] In another example, the difference in the lattice constant of the passivation film with respect to an integer multiple of the lattice constant of the semiconductor light-emitting structure may be within ±30% of an integer multiple of the lattice constant of the semiconductor light-emitting structure.

[0011] The energy bandgap of the above passivation film may be larger than the energy bandgap of the above semiconductor light-emitting structure.

[0012] The above passivation film is, for example, ZrO, SrO, MgO, BaO, CeO2, Gd2O3, CaO, HfO2, TiO2, AlO x , BaN, SiN, TiN, CeN, AlN, ZnSe, ZnS, AlGaN, and Al x Ga 1-x It may include at least one material among As (x ≥ 0.9).

[0013] For example, the thickness of the passivation film may be within the range of 5 nm to 20 nm.

[0014] The above nanorod light-emitting device further includes a protective film disposed between the semiconductor light-emitting structure and the passivation film and directly surrounding the sidewall of the semiconductor light-emitting structure, and the protective film may include an insulating crystalline material having the same crystalline structure as the crystalline structure of the semiconductor light-emitting structure.

[0015] The energy bandgap of the protective film is greater than the energy bandgap of the semiconductor light-emitting structure, and the energy bandgap of the passivation film may be equal to or greater than the energy bandgap of the protective film.

[0016] For example, the thickness of the protective film may be within the range of 0.5 nm to 5 nm.

[0017] The above nanorod light-emitting device further includes an insulating film surrounding the sidewall of the passivation film, and the insulating film may include an amorphous material having insulating properties.

[0018] For example, the thickness of the insulating film may be within the range of 40 nm to 70 nm.

[0019] The energy band gap of the insulating film may be larger than the energy band gap of the passivation film.

[0020] The above semiconductor light-emitting structure may include: a first semiconductor layer doped with a first conductivity type; a light-emitting layer disposed on the first semiconductor layer; and a second semiconductor layer disposed on the light-emitting layer and doped with a second conductivity type that is electrically opposite to the first conductivity type.

[0021] The above semiconductor light-emitting structure may further include a transparent electrode disposed on the second semiconductor layer.

[0022] The semiconductor light-emitting structure may, for example, have a height in the range of 1 μm to 20 μm and an outer diameter in the range of 0.05 μm to 2 μm.

[0023] A display device according to another embodiment may include: a plurality of pixel electrodes; a common electrode corresponding to the plurality of pixel electrodes; and a plurality of nanorod light-emitting elements having the structure described above, connected between each pixel electrode and the common electrode.

[0024] A method for manufacturing a nanorod light-emitting device according to another embodiment comprises: forming a first semiconductor layer doped with a first conductivity type on a substrate; forming a light-emitting layer on the first semiconductor layer; forming a second semiconductor layer doped with a second conductivity type electrically opposite to the first conductivity type on the light-emitting layer; patterning the first semiconductor layer, the light-emitting layer, and the second semiconductor layer into a plurality of nanorod shapes to form a plurality of semiconductor light-emitting structures; and forming a passivation film to surround the sidewalls of the plurality of semiconductor light-emitting structures; wherein the passivation film may include an insulating crystal material having a crystal structure identical to the crystal structure of the semiconductor light-emitting structure.

[0025] The step of forming the passivation film may include: a step of depositing the material of the passivation film by an atomic layer deposition method within 1 to 15 times; a step of heating and crystallizing the deposited material of the passivation film; and a step of repeating the step of depositing the material of the passivation film and the step of crystallizing the deposited material of the passivation film within 1 to 10 times.

[0026] For example, the step of crystallizing the material of the deposited passivation film can utilize an argon (Ar) plasma method. Effects of the invention

[0027] According to the disclosed embodiment, the passivation film of the nanorod light-emitting device has a crystal structure identical to the crystal structure of the semiconductor light-emitting structure. Therefore, due to this passivation film, unsaturated bonds on the outer surface of the semiconductor light-emitting structure are reduced, thereby reducing surface defects. As a result, the luminous efficiency of the nanorod light-emitting device can be increased. Brief explanation of the drawing

[0028] FIG. 1 is a cross-sectional view showing the schematic configuration of a nanorod light-emitting device according to one embodiment. Figure 2 is a top view of the nanorod light-emitting device shown in Figure 1. FIGS. 3a to 3e are cross-sectional views illustrating an exemplary method for manufacturing a nanorod light-emitting device as illustrated in FIG. 1. Figure 4 is a flowchart illustrating the process of forming a passivation film. FIG. 5 is a cross-sectional view showing the schematic configuration of a nanorod light-emitting device according to another embodiment. Figure 6 is a flowchart exemplifying the process of forming a protective film and a passivation film as illustrated in Figure 5. FIG. 7 is a cross-sectional view showing the schematic configuration of a nanorod light-emitting device according to another embodiment. Figure 8 exemplarily shows an energy band diagram for the passivation film and insulating film shown in Figure 7. FIG. 9 is a cross-sectional view showing the schematic configuration of a nanorod light-emitting device according to another embodiment. FIG. 10 is a cross-sectional view showing the schematic configuration of a nanorod light-emitting device according to another embodiment. FIG. 11 is a conceptual diagram schematically showing the configuration of a display device according to one embodiment using a nanorod light-emitting element. FIG. 12 is a schematic block diagram of an electronic device according to one embodiment. FIG. 13 illustrates an example in which a display device according to embodiments is applied to a mobile device. FIG. 14 illustrates an example in which a display device according to embodiments is applied to a vehicle display device. FIG. 15 illustrates an example in which a display device according to embodiments is applied to augmented reality glasses or virtual reality glasses. FIG. 16 illustrates an example in which a display device according to embodiments is applied to signage. FIG. 17 illustrates an example in which a display device according to embodiments is applied to a wearable display. Specific details for implementing the invention

[0029] Hereinafter, with reference to the attached drawings, a nanorod light-emitting element, a method for manufacturing the same, and a display device including a nanorod light-emitting element will be described in detail. In the drawings below, the same reference numerals refer to the same components, and the size of each component in the drawings may be exaggerated for clarity and convenience of explanation. Furthermore, the embodiments described below are merely illustrative, and various modifications are possible from these embodiments.

[0030] In the following, terms designated as "upper" or "upper" may include not only those directly above in contact but also those above non-contact. Singular expressions include multiple expressions unless the context clearly indicates otherwise. Furthermore, when a part is described as "comprising" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.

[0031] The use of the term "for example" and similar descriptive terms may apply to both the singular and the plural. Unless there is an explicit description of the order of the steps constituting the method, these steps may be performed in a suitable order and are not necessarily limited to the described order.

[0032] Additionally, terms such as "...part," "module," etc., as described in the specification refer to a unit that processes at least one function or operation, and this may be implemented in hardware or software, or as a combination of hardware and software.

[0033] The connections of lines or connecting members between the components shown in the drawings are exemplary representations of functional connections and / or physical or circuit connections, and may be replaced or additionally represented as various functional connections, physical connections, or circuit connections in the actual device.

[0034] All examples or the use of exemplary terms are merely for the purpose of describing technical ideas in detail, and unless limited by the claims, the scope is not limited by such examples or exemplary terms.

[0035] FIG. 1 is a cross-sectional view showing the schematic configuration of a nanorod light-emitting device according to one embodiment. Referring to FIG. 1, a nanorod light-emitting device (100) according to one embodiment may include a semiconductor light-emitting structure (110) having a nanorod shape and a passivation film (111) that surrounds the sidewall of the semiconductor light-emitting structure (110) and has insulating properties.

[0036] The semiconductor light-emitting structure (110) may include a first semiconductor layer (103), a light-emitting layer (104) disposed on the first semiconductor layer (103), and a second semiconductor layer (105) disposed on the light-emitting layer (104). The semiconductor light-emitting structure (110) may further include a transparent electrode (106) disposed on the second semiconductor layer (105). Additionally, although not illustrated, the semiconductor light-emitting structure (110) may further include a transparent contact layer disposed between the second semiconductor layer (105) and the transparent electrode (106).

[0037] The first semiconductor layer (103) and the second semiconductor layer (105) may be made of a group II-VI or group III-V compound semiconductor material. The first semiconductor layer (103) and the second semiconductor layer (105) serve to provide electrons and holes to the light-emitting layer (104). To this end, the first semiconductor layer (103) may be doped as n-type or p-type, and the second semiconductor layer (105) may be doped as a conductivity type electrically opposite to that of the first semiconductor layer (103). For example, the first semiconductor layer (103) may be doped as n-type and the second semiconductor layer (105) may be doped as p-type, or the first semiconductor layer (103) may be doped as p-type and the second semiconductor layer (105) may be doped as n-type. When the first semiconductor layer (103) or the second semiconductor layer (105) is doped with n-type, for example, silicon (Si) can be used as a dopant, and when it is doped with p-type, for example, zinc (Zn) can be used as a dopant. The first semiconductor layer (103) or the second semiconductor layer (105) doped with n-type can provide electrons to the light-emitting layer (104), and the second semiconductor layer (105) or the first semiconductor layer (103) doped with p-type can provide holes to the light-emitting layer (104).

[0038] The light-emitting layer (104) has a quantum well structure in which quantum wells are arranged between barriers. Light can be generated as electrons and holes provided from the first semiconductor layer (103) and the second semiconductor layer (105) recombine within the quantum wells in the light-emitting layer (104). The wavelength of light generated in the light-emitting layer (104) can be determined according to the energy bandgap of the material constituting the quantum wells in the light-emitting layer (104). The light-emitting layer (104) may have only a single quantum well, but it may have a multi-quantum well (MQW) structure in which multiple quantum wells and multiple barriers are arranged alternately. The thickness of the light-emitting layer (104) or the number of quantum wells in the light-emitting layer (104) can be appropriately selected by considering the driving voltage and luminous efficiency of the nanorod light-emitting device (100). For example, the thickness of the light-emitting layer (104) can be selected to be less than or equal to twice the diameter (D) of the semiconductor light-emitting structure (110).

[0039] The semiconductor light-emitting structure (110) may have the form of a nanorod having a very small size on a nanoscale or microscale. For example, the semiconductor light-emitting structure (110) may have a diameter (D) in the range of approximately 0.05 μm to 2 μm. The semiconductor light-emitting structure (110) having the form of a nanorod may have a generally uniform diameter along the height direction. For example, the diameters of the first semiconductor layer (103), the light-emitting layer (104), the second semiconductor layer (105), and the transparent electrode (106) may be generally the same. Additionally, when the length between the lower surface of the first semiconductor layer (103) and the upper surface of the second semiconductor layer (105), or the length between the lower surface of the first semiconductor layer (103) and the upper surface of the transparent electrode (106), is referred to as the height (H) of the semiconductor light-emitting structure (110), the height (H) of such semiconductor light-emitting structure (110) may have a range of approximately 1 μm to 20 μm. Additionally, the semiconductor light-emitting structure (110) may have a large aspect ratio of, for example, 5 or more. Generally, the diameter (D) of the semiconductor light-emitting structure (110) may be selected to be about 600 nm, and the height (H) to be about 5 μm. In this case, the aspect ratio of the semiconductor light-emitting structure (110) is slightly greater than 8.

[0040] However, when a semiconductor light-emitting structure (110) with a large aspect ratio is fabricated in such a small size, the surface-to-volume ratio increases, and the surface defects of the light-emitting layer (104) increase. In other words, surface defects caused by dangling bonds occur on the outer surface of the light-emitting layer (104), and as the surface-to-volume ratio increases, the dangling bonds also increase, and consequently, the surface defects also increase. These surface defects hinder the flow of current and become a factor that lowers the light-emitting efficiency of the light-emitting layer (104).

[0041] According to the present embodiment, the passivation film (111) surrounding the sidewall of the semiconductor light-emitting structure (110) may include an insulating crystal material having the same crystal structure as the crystal structure of the semiconductor light-emitting structure (100). In particular, the passivation film (111) may have a lattice matching epitaxy relationship or a domain matching epitaxy relationship with the semiconductor light-emitting structure (110). A lattice matching epitaxy relationship means a relationship in which the lattice constant of the passivation film (111) is nearly identical to the lattice constant of the semiconductor light-emitting structure (110). Additionally, a domain matching epitaxy relationship means a relationship in which the lattice constant of the passivation film (111) is nearly identical to an integer multiple of the lattice constant of the semiconductor light-emitting structure (110), or the lattice constant of the semiconductor light-emitting structure (110) is nearly identical to an integer multiple of the lattice constant of the passivation film (111). The lattice constant of the passivation film (111) does not need to perfectly match the lattice constant of the semiconductor light-emitting structure (110) or an integer multiple thereof, and may be within a somewhat similar range. For example, the difference in the lattice constant of the passivation film (111) to the lattice constant of the semiconductor light-emitting structure (110) may be within ±30% of the lattice constant of the semiconductor light-emitting structure (110). Alternatively, the difference in the lattice constant of the passivation film (111) to an integer multiple of the lattice constant of the semiconductor light-emitting structure (110) may be within ±30% of an integer multiple of the lattice constant of the semiconductor light-emitting structure (110).

[0042] In this case, since atoms located on the outer surface of the semiconductor light-emitting structure (110) can mostly bond with atoms of the passivation film (111), unsaturated bonds on the outer surface of the semiconductor light-emitting structure (110) are reduced, and consequently, surface defects are also reduced. Therefore, current can flow relatively uniformly over the entire area of ​​the light-emitting layer (104), and light emission can occur relatively uniformly over the entire area of ​​the light-emitting layer (104). Thus, the light-emitting efficiency of the nanorod light-emitting device (100) can be increased.

[0043] FIG. 2 is a top view of the nanorod light-emitting element (100) illustrated in FIG. 1. In addition to reducing surface defects on the outer surface of the semiconductor light-emitting structure (110), the passivation film (111) can also protect the semiconductor light-emitting structure (110) from external physical and chemical shocks and insulate the semiconductor light-emitting structure (110) to prevent current leakage. To this end, as shown in FIG. 2, the passivation film (111) can be positioned to completely surround the sidewall of the semiconductor light-emitting structure (110). Thus, the passivation film (111) can have a ring shape when viewed in a top view and can have an overall cylindrical shape. Although the semiconductor light-emitting structure (110) is illustrated in FIG. 2 as being circular as an example, it is not necessarily limited thereto. The thickness (t) of the passivation film (111) along the diameter direction of the nanorod light-emitting element (100), that is, the distance between the inner sidewall and the outer sidewall of the passivation film (111), may be within the range of about 5 nm to about 20 nm.

[0044] Additionally, in order to confine electrons and holes within the semiconductor light-emitting structure (110), particularly within the light-emitting layer (104), so that light can be easily generated in the light-emitting layer (104), the energy bandgap of the passivation film (111) may be larger than the energy bandgap of the semiconductor light-emitting structure (110), particularly the energy bandgap of the light-emitting layer (104). Materials for the passivation film (111) satisfying the above conditions include, for example, ZrO, SrO, MgO, BaO, CeO2, Gd2O3, CaO, HfO2, TiO2, and AlO. x , BaN, SiN, TiN, CeN, AlN, ZnSe, ZnS, AlGaN, and Al x Ga 1-x It may include at least one material among As (x ≥ 0.9).

[0045] FIGS. 3a to 3e are cross-sectional views illustrating an exemplary method for manufacturing a nanorod light-emitting device shown in FIG. 1. Hereinafter, a method for manufacturing a nanorod light-emitting device (100) according to an embodiment will be described with reference to FIGS. 3a to 3e.

[0046] First, referring to FIG. 3a, a buffer layer (102), a first semiconductor layer (103), a light-emitting layer (104), a second semiconductor layer (105), and a transparent electrode (106) are sequentially grown on a substrate (101). The buffer layer (102) is placed over a large area of ​​the upper surface of the substrate (101), the first semiconductor layer (103) is grown over the entire upper surface of the buffer layer (102), and the light-emitting layer (104) is grown over the entire upper surface of the first semiconductor layer (103). Additionally, the second semiconductor layer (105) and the transparent substrate (106) can be grown so as to be placed over the entire upper surface of the layer below them.

[0047] The substrate (101) and the buffer layer (102) may include, for example, sapphire or GaAs. The substrate (101) and the buffer layer (102) may be doped with the same conductivity type as the first semiconductor layer (103) placed thereon. For example, if the first semiconductor layer (103) is doped with n-type, the substrate (101) and the buffer layer (102) may also be doped with n-type. The substrate (101) may be doped at a lower concentration than the buffer layer (102), and the buffer layer (102) may be doped at a higher concentration than the substrate (101). Although not shown in FIG. 3a, a contact layer for ohmic contact may be further disposed between the buffer layer (102) and the first semiconductor layer (103). A contact layer disposed between the buffer layer (102) and the first semiconductor layer (103) may also be doped with the same conductivity type as the first semiconductor layer (103) and may be doped at a higher concentration than the doping concentration of the buffer layer (102) and the first semiconductor layer (103). Additionally, a contact layer may be further disposed between the second semiconductor layer (105) and the transparent electrode (106). For example, the contact layer may be made of GaInP or GaAs, or may include both GaInP and GaAs.

[0048] In the case where the nanorod light-emitting element (100) is a light-emitting element that generates red light, the first semiconductor layer (103) may be made of, for example, n-AlGaInP, and the second semiconductor layer (105) may be made of p-AlGaInP. Accordingly, the first semiconductor layer (103) is a single layer made of a semiconductor material of a single composition, and the second semiconductor layer (105) is also a single layer made of a semiconductor material of the same single composition as the material of the first semiconductor layer (103). However, the first semiconductor layer (103) and the second semiconductor layer (105) are doped with opposite types. For example, the first semiconductor layer (103) may be doped with Si and the second semiconductor layer (105) may be doped with Zn. Depending on the light emission color of the nanorod light-emitting element (100), the materials of the first semiconductor layer (103) and the second semiconductor layer (105) may include other semiconductor materials such as, for example, InGaN, AlGaInN, in addition to AlGaInP.

[0049] When the light-emitting layer (104) generates red light, it may be made of, for example, AlGaInP. The AlGaInP of the light-emitting layer (104) is not doped. The light-emitting layer (104) includes a barrier and a quantum well, and for this purpose, the Al content in AlGaInP may vary. For example, the barrier has a higher Al content in AlGaInP than the quantum well. Also, compared to the first and second semiconductor layers (103, 105), the Al content is highest in the first and second semiconductor layers (103, 105), followed by the Al content in the barrier within the light-emitting layer (104), and the Al content is lowest in the quantum well within the light-emitting layer (104). Then, the energy levels of the first and second semiconductor layers (103, 105) in the conduction band are the highest, the energy levels of the barriers in the light-emitting layer (104) are the next highest, and the energy levels of the quantum wells in the light-emitting layer (104) are the lowest. Even when using semiconductor materials other than AlGaInP, the light-emitting layer (104) can be formed to have barriers and quantum wells by controlling the composition of the materials.

[0050] After forming the transparent electrode (106), a hard mask (150) having a plurality of openings arranged at regular intervals is formed on the transparent electrode (106). For example, the hard mask (150) can be formed by forming the material of the hard mask (150) entirely on the upper surface of the transparent electrode (106) and then patterning the material of the hard mask (150) to have a plurality of openings arranged at regular intervals using a lithography method. The hard mask (150) can be formed, for example, as a single layer of SiO2 or a double layer of SiO2 / Al. Although not specified in the cross-sectional view of FIG. 3a, when viewed from above, the hard mask (150) may have a plurality of openings arranged in two dimensions.

[0051] Referring to FIG. 3b, areas not covered by the hard mask (150) can be removed by etching them using a dry etching method. For example, by sequentially etching and removing the transparent electrode (106), the second semiconductor layer (105), the light-emitting layer (104), and the first semiconductor layer (103) located below the opening of the hard mask (150), the transparent electrode (106), the second semiconductor layer (105), the light-emitting layer (104), and the first semiconductor layer (103) can be patterned into a plurality of nanorods. Then, as shown in FIG. 3b, a plurality of semiconductor light-emitting structures (110) having a nanorod shape, each including the transparent electrode (106), the second semiconductor layer (105), the light-emitting layer (104), and the first semiconductor layer (103), can be formed simultaneously on the substrate (101) and the buffer layer (102). Although FIG. 3b is illustrated with the lower region of the first semiconductor layer (103) partially remaining, it is not limited thereto and etching may be performed until the buffer layer (102) is exposed. Then, the lower region of the first semiconductor layer (103) may be completely etched and the buffer layer (102) may remain partially.

[0052] The semiconductor light-emitting structures (110) formed in FIG. 3b may have a shape in which the diameter gradually decreases along the height direction from the first semiconductor layer (103) to the transparent electrode (106). Referring to FIG. 3c, the diameter of the semiconductor light-emitting structures (110) along the height direction can be made uniform, for example, through a wet treatment using a KOH solution. In this process, the hard mask (150) can also be removed.

[0053] Referring to FIG. 3d, a passivation film (111) can be formed with a uniform thickness on the surface of a semiconductor light-emitting structure (110). To form the passivation film (111), for example, a passivation film material can be deposited several times using an atomic layer deposition (ALD) method, and then the process of heating and crystallizing the deposited passivation film material can be repeated.

[0054] FIG. 4 is a flowchart illustrating the process of forming a passivation film (111) as an example. Referring to FIG. 4, a passivation film material can be deposited repeatedly in 1 to 15 times using an ALD method (S11). Depending on the passivation film material, the thickness of the deposited passivation film material can increase by about 0.5 nm per deposition. Then, the deposited passivation film material can be heated to crystallize it (S12). For example, the deposited passivation film material can be crystallized using an argon (Ar) plasma method. Then, the process of depositing the passivation film material (S11) and the process of crystallizing the deposited passivation film material (S12) can be repeated in 1 to 10 times until the thickness of the crystallized passivation film (111) reaches a target thickness.

[0055] According to this method, it is possible to form a crystallized passivation film (111) surrounding the surface of the semiconductor light-emitting structure (110) while minimizing damage to the semiconductor light-emitting structure (110). In the process of depositing the passivation film material (S11), the number of depositions can be determined by considering the thickness of the passivation film material that can be crystallized by an argon (Ar) plasma method without damaging the semiconductor light-emitting structure (110). Additionally, the number of times the process of depositing the passivation film material (S11) and the process of crystallizing the deposited passivation film material (S12) are repeated can be determined according to the target thickness of the crystallized passivation film (111).

[0056] Finally, referring to FIG. 3e, the passivation film (111) existing between adjacent semiconductor light-emitting structures (110) and the passivation film (111) existing on the upper surface of the semiconductor light-emitting structure (110) can be removed. Then, only the passivation film (110) surrounding the sidewalls of each of the plurality of semiconductor light-emitting structures (110) may remain. In this way, a plurality of nanorod light-emitting elements (100) can be formed simultaneously on the substrate (101) and the buffer layer (102). Then, the plurality of nanorod light-emitting elements (100) can be separated individually by removing the buffer layer (102). Alternatively, the substrate (101) and the buffer layer (102) can be cut in the longitudinal direction so that each nanorod light-emitting element (100) is used with the substrate (101) and the buffer layer (102) attached together to each nanorod light-emitting element (100). Alternatively, the substrate (101) and the buffer layer (102) may be cut in the vertical direction so that two or more nanorod light-emitting elements (100) remain, and two or more nanorod light-emitting elements (100) may be used together.

[0057] FIG. 5 is a cross-sectional view showing the schematic configuration of a nanorod light-emitting device according to another embodiment. Referring to FIG. 5, the nanorod light-emitting device (200) may further include a protective film (112) disposed between a semiconductor light-emitting structure (110) and a passivation film (111). The remaining structure of the nanorod light-emitting device (200) may be the same as the structure of the nanorod light-emitting device (100) shown in FIG. 1.

[0058] The protective film (112) can serve to protect the semiconductor light-emitting structure (110) from being damaged by plasma during the process of forming the crystallized passivation film (111). To this end, the protective film (112) is formed to directly surround the sidewall of the semiconductor light-emitting structure (110), and the passivation film (111) can be formed to surround the sidewall of the protective film (112). Thus, the protective film (112) and the passivation film (111) are arranged in a concentric shape. Since the protective film (112) is intended to prevent damage to the semiconductor light-emitting structure (110), it does not need to be thick. The thickness of the protective film (112) may be smaller than the thickness of the passivation film (111). For example, the thickness (t1) of the protective film (112), that is, the distance between the inner sidewall and the outer sidewall of the protective film (112), may be within the range of about 0.5 nm to 5 nm.

[0059] The protective film (112), like the passivation film (111), may also include an insulating crystal material having the same crystal structure as the crystal structure of the semiconductor light-emitting structure (110). Additionally, the protective film (112) may have a lattice-matched epitaxy relationship or a domain-matched epitaxy relationship with the semiconductor light-emitting structure (110). To this end, the material of the protective film (112) may be selected from the materials of the passivation film (111) exemplified above. Accordingly, the energy bandgap of the protective film (112) may be larger than the energy bandgap of the semiconductor light-emitting structure (110). Furthermore, the protective film (112) and the passivation film (111) may be made of the same material or different materials. When the protective film (112) and the passivation film (111) are made of different materials, the energy bandgap of the passivation film (111) may be selected to be larger than the energy bandgap of the protective film (112). However, when the protective film (112) and the passivation film (111) are made of the same material, the energy bandgap of the passivation film (111) is the same as the energy bandgap of the protective film (112).

[0060] FIG. 6 is a flowchart exemplifying the process of forming a protective film and a passivation film as illustrated in FIG. 5. Referring to FIG. 6, a protective film material can be deposited repeatedly within 1 to 5 times using an ALD method (S10). Then, a passivation film material can be deposited repeatedly within 1 to 15 times using an ALD method (S11). Then, the deposited protective film material and the passivation film material can be crystallized, for example, using an argon (Ar) plasma method (S12). At this time, the protective film material can be crystallized to form a protective film (112). Then, the process of depositing the passivation film material (S11) and the process of crystallizing the deposited passivation film material (S12) can be repeated within 1 to 10 times until the thickness of the crystallized passivation film (111) reaches a target thickness. Thus, the protective film (112) can be formed in the first crystallization process (S12). Depending on the needs, the number of depositions in the first passivation film material deposition process (S11) may be less than the number of depositions in subsequent passivation film material deposition processes (S11).

[0061] FIG. 7 is a cross-sectional view showing the schematic configuration of a nanorod light-emitting device according to another embodiment. Referring to FIG. 7, the nanorod light-emitting device (300) may further include an insulating film (113) surrounding the sidewall of the passivation film (111). The remaining structure of the nanorod light-emitting device (300) may be the same as the structure of the nanorod light-emitting device (200) shown in FIG. 5. Since the protective film (112), the passivation film (111), and the insulating film (113) are sequentially arranged from the sidewall of the semiconductor light-emitting structure (110), the protective film (112), the passivation film (111), and the insulating film (113) are arranged in a concentric circle shape. FIG. 7 shows the nanorod light-emitting device (300) including the protective film (112), but the protective film (112) may be omitted. In this case, the nanorod light-emitting element (300) may include a passivation film (111) and an insulating film (113) sequentially arranged from the sidewall of the semiconductor light-emitting structure (110).

[0062] The insulating film (113) can serve to insulate the nanorod light-emitting element (300) to more effectively prevent leakage current. The insulating film (113) does not need to be crystalline and can be made of an amorphous material having insulating properties. For example, the insulating film (113) may include at least one amorphous material selected from the materials of the passivation film (111) previously exemplified. The thickness (t2) of the insulating film (113), that is, the distance between the inner sidewall and the outer sidewall of the insulating film (113), may be thicker than the thickness of the protective film (112) and the passivation film (111). For example, the thickness (t2) of the insulating film (113) may be within the range of 40 nm to 70 nm.

[0063] In order to confine the current inside the insulating film (113), the energy band gap of the insulating film (113) may be larger than the energy band gap of the passivation film (111). FIG. 8 shows an exemplary energy band diagram for the passivation film (111) and the insulating film (113) illustrated in FIG. 7. Referring to FIG. 8, the energy band gap (Eg2) of the passivation film (111) is larger than the energy band gap (Eg1) of the semiconductor light-emitting structure (110), particularly the light-emitting layer (104), and the energy band gap (Eg3) of the semiconductor light-emitting structure (110) may be larger than the energy band gap of the passivation film (111).

[0064] FIG. 9 is a cross-sectional view showing the schematic configuration of a nanorod light-emitting device according to another embodiment. Up until now, the passivation film (111) has been depicted as surrounding all the sidewalls of the first semiconductor layer (103), the light-emitting layer (104), and the second semiconductor layer (105), but is not necessarily limited thereto. Referring to FIG. 9, the nanorod light-emitting device (400) may include a passivation film (111) that surrounds only some sidewalls of the semiconductor light-emitting structure (110). The passivation film (111) may be formed to surround only the light-emitting layer (104) or at least some sidewalls of the semiconductor light-emitting structure (110) including the light-emitting layer (104).

[0065] FIG. 10 is a cross-sectional view showing the schematic configuration of a nanorod light-emitting device according to another embodiment. Referring to FIG. 10, the nanorod light-emitting device (500) may include a semiconductor light-emitting structure (110') configured to concentrate current into the center of the light-emitting layer (104) and a passivation film (111) surrounding the sidewall of the semiconductor light-emitting structure (110').

[0066] The semiconductor light-emitting structure (110') may include a first semiconductor layer (103), a light-emitting layer (104) disposed on the first semiconductor layer (103), a second semiconductor layer (105) disposed on the light-emitting layer (104), a transparent electrode (106) disposed on the second semiconductor layer (105), a first current path layer (107) disposed between the first semiconductor layer (103) and the light-emitting layer (104), and a second current path layer (108) disposed between the light-emitting layer (104) and the second semiconductor layer (105). The first current path layer (107) and the second current path layer (108), disposed respectively on the lower surface and the upper surface of the light-emitting layer (104), may serve to concentrate current toward the center of the light-emitting layer (104) to further improve the light-emitting efficiency of the light-emitting layer (104).

[0067] To this end, the first current path layer (107) may include a first current blocking layer (107a) disposed between the edge of the lower surface of the light-emitting layer (104) and the edge of the upper surface of the first semiconductor layer (103), and a first conductive layer (107b) disposed between the center of the lower surface of the light-emitting layer (104) and the center of the upper surface of the first semiconductor layer (103). The first current blocking layer (107a) has a ring shape that surrounds the sidewall of the first conductive layer (107b) in the same layer as the first conductive layer (107b). Additionally, the second current path layer (108) may include a second current blocking layer (108a) disposed between the edge of the upper surface of the light-emitting layer (104) and the edge of the lower surface of the second semiconductor layer (105), and a second conductive layer (108b) disposed between the center of the upper surface of the light-emitting layer (104) and the center of the lower surface of the second semiconductor layer (105). The second current blocking layer (108a) has a ring shape that surrounds the sidewall of the second conductive layer (108b) in the same layer as the second conductive layer (108b).

[0068] The height of the first current blocking layer (107a) and the height of the first conductive layer (107b) may be the same, and the height of the second current blocking layer (108a) and the height of the second conductive layer (108b) may be the same. For example, the heights of the first current blocking layer (107a) and the second current blocking layer (108a) may have a range of about 5 nm to 200 nm. In addition, the outer diameter of the first current blocking layer (107a) and the second current blocking layer (108a) may have a range of about 0.05 μm to about 2 μm, which is the same as the outer diameter of the nanorod light-emitting element (500). The diameters of the first conductive layer (107b) and the second conductive layer (108b) may be about 0.01 μm or more and may be smaller than the outer diameters of the first current blocking layer (107a) and the second current blocking layer (108a).

[0069] The above-described nanorod light-emitting elements (100, 200, 300, 400, 500) can be used for various applications. In particular, the nanorod light-emitting elements (100, 200, 300, 400, 500) can be used as light-emitting elements for pixels of a next-generation display device. For example, FIG. 11 is a conceptual diagram schematically showing the configuration of a display device according to an embodiment using nanorod light-emitting elements. Referring to FIG. 11, the display device (600) may include a plurality of first pixel electrodes (602B), a first common electrode (603B) corresponding to a plurality of first pixel electrodes (602B), a plurality of second pixel electrodes (602G), a second common electrode (603G) corresponding to a plurality of second pixel electrodes (602G), a plurality of third pixel electrodes (602R), a third common electrode (603R) corresponding to a plurality of third pixel electrodes (602B), a plurality of first nanorod light-emitting elements (100B) connected between each first pixel electrode (602B) and a first common electrode (603B), a plurality of second nanorod light-emitting elements (100G) connected between each second pixel electrode (602G) and a second common electrode (603G), and a plurality of third nanorod light-emitting elements (100R) connected between each third pixel electrode (602R) and a third common electrode (603R).

[0070] For example, the first nanorod light-emitting element (100B) may be configured to emit blue light, the second nanorod light-emitting element (100G) may be configured to emit green light, and the third nanorod light-emitting element (100R) may be configured to emit red light. Additionally, one first pixel electrode (602B) may form one blue subpixel together with the first common electrode (603B), one second pixel electrode (602G) may form one green subpixel together with the second common electrode (603G), and one third pixel electrode (602R) may form one red subpixel together with the third common electrode (603R).

[0071] The nanorod light-emitting elements (100, 200, 300, 400, 500) according to the embodiments described above can be applied without limitation to display devices of various sizes and uses. For example, FIGS. 12 to 17 exemplarily show various devices including display devices to which nanorod light-emitting elements according to the embodiments are applied.

[0072] First, FIG. 12 is a schematic block diagram of an electronic device according to one embodiment. Referring to FIG. 12, an electronic device (8201) may be provided within a network environment (8200). In the network environment (8200), the electronic device (8201) may communicate with another electronic device (8202) through a first network (8298) (short-range wireless communication network, etc.) or may communicate with another electronic device (8204) and / or a server (8208) through a second network (8299) (long-range wireless communication network, etc.). The electronic device (8201) may communicate with the electronic device (8204) through the server (8208). The electronic device (8201) may include a processor (8220), memory (8230), input device (8250), sound output device (8255), display device (8260), audio module (8270), sensor module (8276), interface (8277), haptic module (8279), camera module (8280), power management module (8288), battery (8289), communication module (8290), subscriber identification module (8296), and / or antenna module (8297). Some of these components may be omitted from the electronic device (8201), or other components may be added. Some of these components may be implemented as a single integrated circuit. For example, the sensor module (8276) (fingerprint sensor, iris sensor, ambient light sensor, etc.) may be implemented by being embedded in the display device (8260) (display, etc.).

[0073] The processor (8220) can execute software (program (8240), etc.) to control one or more other components (hardware, software components, etc.) of the electronic device (8201) connected to the processor (8220) and perform various data processing or operations. As part of the data processing or operations, the processor (8220) can load commands and / or data received from other components (sensor module (8276), communication module (8290), etc.) into volatile memory (8232), process the commands and / or data stored in volatile memory (8232), and store the resulting data in non-volatile memory (8234). Non-volatile memory (8234) may include an internal memory (8236) mounted within the electronic device (8201) and a removable external memory (8238). The processor (8220) may include a main processor (8221) (central processing unit, application processor, etc.) and an auxiliary processor (8223) (graphics processing unit, image signal processor, sensor hub processor, communication processor, etc.) that can operate independently or together with it. The auxiliary processor (8223) may use less power than the main processor (8221) and may perform specialized functions.

[0074] The auxiliary processor (8223) can control the functions and / or states associated with some of the components of the electronic device (8201), such as the display device (8260), sensor module (8276), communication module (8290), etc., on behalf of the main processor (8221) while the main processor (8221) is in an inactive state (sleep state), or together with the main processor (8221) while the main processor (8221) is in an active state (application execution state). The auxiliary processor (8223) (image signal processor, communication processor, etc.) may also be implemented as part of other functionally related components (camera module (8280), communication module (8290), etc.).

[0075] The memory (2230) can store various data required by components of the electronic device (8201), such as a processor (8220), a sensor module (8276), etc. The data may include, for example, input data and / or output data for software (program (8240), etc.) and related commands. The memory (8230) may include volatile memory (8232) and / or non-volatile memory (8234).

[0076] The program (8240) may be stored as software in memory (8230) and may include an operating system (8242), middleware (8244) and / or an application (8246).

[0077] The input device (8250) can receive commands and / or data to be used for a component (processor (8220), etc.) of the electronic device (8201) from outside the electronic device (8201) (user, etc.). The input device (8250) may include a remote controller, a microphone, a mouse, a keyboard, and / or a digital pen (stylus pen, etc.).

[0078] The sound output device (8255) can output a sound signal to the outside of the electronic device (8201). The sound output device (8255) may include a speaker and / or a receiver. The speaker may be used for general purposes, such as multimedia playback or recording playback, and the receiver may be used to receive incoming calls. The receiver may be combined as part of the speaker or implemented as a separate, independent device.

[0079] The display device (8260) can visually provide information to the outside of the electronic device (8201). The display device (8260) may include a display, a holographic device, or a projector and a control circuit for controlling said device. The display device (8260) may include the aforementioned driving circuit, a micro semiconductor light-emitting element, a side reflection structure, a bottom reflection structure, etc. The display device (8260) may further include a touch circuitry configured to detect a touch, and / or a sensor circuitry configured to measure the intensity of the force generated by the touch (such as a pressure sensor).

[0080] The audio module (8270) can convert sound into an electrical signal or, conversely, convert an electrical signal into sound. The audio module (8270) can acquire sound through an input device (8250) or output sound through a sound output device (8255) and / or a speaker and / or headphones of another electronic device (electronic device (8102), etc.) that is directly or wirelessly connected to the electronic device (8201).

[0081] The sensor module (8276) can detect the operating state (power, temperature, etc.) of the electronic device (8201) or the external environmental state (user state, etc.) and generate an electrical signal and / or data value corresponding to the detected state. The sensor module (8276) may include a gesture sensor, a gyroscope sensor, a barometric pressure sensor, a magnetic sensor, an accelerometer sensor, a grip sensor, a proximity sensor, a color sensor, an IR (infrared) sensor, a biosensor, a temperature sensor, a humidity sensor, and / or an illuminance sensor.

[0082] The interface (8277) may support one or more specified protocols that can be used for the electronic device (8201) to be connected directly or wirelessly to another electronic device (electronic device (8102), etc.). The interface (8277) may include an HDMI (High Definition Multimedia Interface), a USB (Universal Serial Bus) interface, an SD card interface, and / or an audio interface.

[0083] The connection terminal (8278) may include a connector that allows the electronic device (8201) to be physically connected to another electronic device (electronic device (8102), etc.). The connection terminal (8278) may include an HDMI connector, a USB connector, an SD card connector, and / or an audio connector (headphone connector, etc.).

[0084] The haptic module (8279) can convert an electrical signal into a mechanical stimulus (vibration, movement, etc.) or an electrical stimulus that the user can perceive through tactile or kinesthetic senses. The haptic module (8279) may include a motor, a piezoelectric element, and / or an electric stimulation device.

[0085] The camera module (8280) can capture still images and video. The camera module (8280) may include a lens assembly including one or more lenses, image sensors, image signal processors, and / or flashes. The lens assembly included in the camera module (8280) can collect light emitted from a subject that is the subject of the image capture.

[0086] The power management module (8288) can manage the power supplied to the electronic device (8201). The power management module (8388) can be implemented as part of a Power Management Integrated Circuit (PMIC).

[0087] The battery (8289) can supply power to the components of the electronic device (8201). The battery (8289) may include a non-rechargeable primary battery, a rechargeable secondary battery and / or a fuel cell.

[0088] The communication module (8290) can support the establishment of a direct (wired) communication channel and / or a wireless communication channel between an electronic device (8201) and another electronic device (electronic device (8102), electronic device (8104), server (8108), etc.), and the performance of communication through the established communication channel. The communication module (8290) may include one or more communication processors that operate independently of the processor (8220) (application processor, etc.) and support direct communication and / or wireless communication. The communication module (8290) may include a wireless communication module (8292) (cellular communication module, short-range wireless communication module, GNSS (Global Navigation Satellite System, etc.) communication module) and / or a wired communication module (8294) (LAN (Local Area Network) communication module, power line communication module, etc.). Among these communication modules, the corresponding communication module can communicate with other electronic devices through a first network (8298) (a short-range communication network such as Bluetooth, WiFi Direct, or IrDA (Infrared Data Association)) or a second network (8299) (a long-range communication network such as a cellular network, the Internet, or a computer network (LAN, WAN, etc.). These various types of communication modules may be integrated into a single component (single chip, etc.) or implemented as multiple separate components (multiple chips). The wireless communication module (8292) can identify and authenticate an electronic device (8201) within a communication network such as the first network (8298) and / or the second network (8299) using subscriber information (such as the International Mobile Subscriber Identifier (IMSI)) stored in the subscriber identification module (8296).

[0089] The antenna module (8297) can transmit signals and / or power to or from the outside (other electronic devices, etc.). The antenna may include a radiator made of a conductive pattern formed on a substrate (PCB, etc.). The antenna module (8297) may include one or multiple antennas. If multiple antennas are included, the communication module (8290) may select an antenna suitable for a communication method used in a communication network, such as a first network (8298) and / or a second network (8299), from among the multiple antennas. Through the selected antenna, signals and / or power may be transmitted or received between the communication module (8290) and other electronic devices. In addition to the antenna, other components (RFIC, etc.) may be included as part of the antenna module (8297).

[0090] Some of the components can be connected to each other and exchange signals (commands, data, etc.) through communication methods between peripheral devices (bus, GPIO (General Purpose Input and Output), SPI (Serial Peripheral Interface), MIPI (Mobile Industry Processor Interface), etc.).

[0091] Commands or data may be transmitted or received between the electronic device (8201) and an external electronic device (8204) through a server (8108) connected to a second network (8299). The other electronic devices (8202, 8204) may be of the same or different type as the electronic device (8201). All or part of the operations performed on the electronic device (8201) may be performed on one or more of the other electronic devices (8202, 8204, 8208). For example, when the electronic device (8201) needs to perform a function or service, instead of performing the function or service itself, it may request one or more other electronic devices to perform part or all of that function or service. Upon receiving the request, one or more other electronic devices may perform additional functions or services related to the request and transmit the results of the execution to the electronic device (8201). To this end, cloud computing, distributed computing, and / or client-server computing technologies may be used.

[0092] FIG. 13 illustrates an example in which a display device according to embodiments is applied to a mobile device. The mobile device (9100) may include a display device (9110), and the display device (9110) may include the aforementioned driving circuit, a micro semiconductor light-emitting element, a side reflection structure, a bottom reflection structure, etc. The display device (9110) may have a foldable structure, for example, a multi-foldable structure.

[0093] FIG. 14 illustrates an example in which a display device according to embodiments is applied to a vehicle display device. The display device may be a head-up display device (9200) for a vehicle and may include a display (9210) provided in one area of ​​the vehicle and a light path changing member (9220) that changes the light path so that an image generated from the display (9210) can be viewed by the driver.

[0094] FIG. 15 illustrates an example in which a display device according to embodiments is applied to augmented reality glasses or virtual reality glasses. Augmented reality glasses (9300) may include a projection system (9310) that forms an image and an element (9320) that guides the image from the projection system (9310) into the user's eye. The projection system (9310) may include the aforementioned driving circuit, a micro semiconductor light-emitting element, a side reflection structure, a bottom reflection structure, etc.

[0095] FIG. 16 illustrates an example in which a display device according to embodiments is applied to signage. The signage (9400) can be used for outdoor advertising using a digital information display and can control advertising content, etc. through a communication network. The signage (9400) can be implemented, for example, through an electronic device described with reference to FIG. 12.

[0096] FIG. 17 illustrates an example in which a display device according to embodiments is applied to a wearable display. The wearable display (9500) may include the aforementioned driving circuit, micro semiconductor light-emitting element, side reflection structure, bottom reflection structure, etc., and may be implemented through an electronic device described with reference to FIG. 12.

[0097] The display device according to the exemplary embodiment can also be applied to various other products, such as rollable TVs and stretchable displays.

[0098] The above-described nanorod light-emitting element, the method for manufacturing the same, and the display device including the nanorod light-emitting element have been described with reference to the embodiments illustrated in the drawings, but this is merely illustrative and those skilled in the art will understand that various modifications and equivalent alternative embodiments are possible therefrom. Therefore, the disclosed embodiments should be considered in an illustrative rather than a restrictive sense. The scope of the rights is defined in the claims, not in the foregoing description, and all variations within the scope of equivalence should be interpreted as being included in the scope of the rights. Explanation of the symbols

[0099] 100, 200, 300, 400, 500.....Nano rod light-emitting diode 101.....Substrate 102.....Sacrificial layer 103, 105.....semiconductor layer 104.....light-emitting layer 106.....Transparent electrode 107, 108.....Current path layer 107a, 108a.....current blocking layer 107b, 108b.....conductive layer 110.....Semiconductor light-emitting structure 111.....Passivation film 112.....Protective film 113.....Insulating film 150.....Mask 600.....Display device

Claims

Claim 1 A nanorod light-emitting device comprising: a semiconductor light-emitting structure having a nanorod shape; a passivation film having insulating properties surrounding the sidewall of the semiconductor light-emitting structure; a protective film disposed between the semiconductor light-emitting structure and the passivation film and directly surrounding the sidewall of the semiconductor light-emitting structure; and an insulating film surrounding the sidewall of the passivation film; wherein the insulating film comprises an insulating amorphous material, and the passivation film and the protective film comprise insulating crystalline materials having the same crystalline structure as the crystalline structure of the semiconductor light-emitting structure, wherein the energy bandgap of the protective film is greater than the energy bandgap of the semiconductor light-emitting structure, the energy bandgap of the passivation film is equal to or greater than the energy bandgap of the protective film, and the energy bandgap of the insulating film is greater than the energy bandgap of the passivation film. Claim 2 A nanorod light-emitting device according to claim 1, wherein the passivation film has a lattice-matched epitaxy relationship or a domain-matched epitaxy relationship with the semiconductor light-emitting structure. Claim 3 A nanorod light-emitting device according to claim 2, wherein the difference between the lattice constant of the passivation film and the lattice constant of the semiconductor light-emitting structure is within ±30% of the lattice constant of the semiconductor light-emitting structure. Claim 4 A nanorod light-emitting device according to claim 2, wherein the difference in the lattice constant of the passivation film to an integer multiple of the lattice constant of the semiconductor light-emitting structure is within ±30% of the integer multiple of the lattice constant of the semiconductor light-emitting structure. Claim 5 delete Claim 6 In claim 1, the passivation film is ZrO, SrO, MgO, BaO, CeO2, Gd2O3, CaO, HfO2, TiO2, AlO x , BaN, SiN, TiN, CeN, AlN, ZnSe, ZnS, AlGaN, and Al x Ga 1-x A nanorod light-emitting device comprising at least one material among As (x≥0.9). Claim 7 A nanorod light-emitting device according to claim 1, wherein the thickness of the passivation film is within the range of 5 nm to 20 nm. Claim 8 delete Claim 9 delete Claim 10 A nanorod light-emitting device according to claim 1, wherein the thickness of the protective film is within the range of 0.5 nm to 5 nm. Claim 11 delete Claim 12 A nanorod light-emitting device according to claim 1, wherein the thickness of the insulating film is within the range of 40 nm to 70 nm. Claim 13 delete Claim 14 A nanorod light-emitting device according to claim 1, wherein the semiconductor light-emitting structure comprises: a first semiconductor layer doped with a first conductivity type; a light-emitting layer disposed on the first semiconductor layer; and a second semiconductor layer disposed on the light-emitting layer and doped with a second conductivity type electrically opposite to the first conductivity type. Claim 15 In claim 14, the nanorod light-emitting device, wherein the semiconductor light-emitting structure further comprises a transparent electrode disposed on the second semiconductor layer. Claim 16 A nanorod light-emitting device according to claim 1, wherein the semiconductor light-emitting structure has a height in the range of 1 μm to 20 μm and an outer diameter in the range of 0.05 μm to 2 μm. Claim 17 A display device comprising: a plurality of pixel electrodes; a common electrode corresponding to the plurality of pixel electrodes; and a plurality of nanorod light-emitting elements connected between each pixel electrode and the common electrode, wherein each nanorod light-emitting element is a nanorod light-emitting element according to any one of claims 1 to 4, 6, 7, 10, 12, and 14 to 16. Claim 18 A method for manufacturing a nanorod light-emitting device, comprising: a step of forming a first semiconductor layer doped with a first conductivity type on a substrate; a step of forming a light-emitting layer on the first semiconductor layer; a step of forming a second semiconductor layer doped with a second conductivity type electrically opposite to the first conductivity type on the light-emitting layer; a step of patterning the first semiconductor layer, the light-emitting layer, and the second semiconductor layer into a plurality of nanorod shapes to form a plurality of semiconductor light-emitting structures; and a step of forming a passivation film to surround the sidewalls of the plurality of semiconductor light-emitting structures; wherein the step of forming the passivation film comprises: a step of depositing the material of the passivation film by an atomic layer deposition method within 1 to 15 times; a step of heating the deposited material of the passivation film to crystallize it; and a step of repeating the step of depositing the material of the passivation film and the step of crystallizing the deposited material of the passivation film within 1 to 10 times; and wherein the passivation film comprises an insulating crystal material having the same crystal structure as the crystal structure of the semiconductor light-emitting structure. Claim 19 delete Claim 20 In claim 18, the step of crystallizing the material of the deposited passivation film utilizes an argon (Ar) plasma method, a method for manufacturing a nanorod light-emitting device. Claim 21 A method for manufacturing a nanorod light-emitting device according to claim 18, wherein the passivation film has a lattice-matched epitaxy relationship or a domain-matched epitaxy relationship with the semiconductor light-emitting structure. Claim 22 A method for manufacturing a nanorod light-emitting device according to claim 21, wherein the difference between the lattice constant of the passivation film and the lattice constant of the semiconductor light-emitting structure is within ±30% of the lattice constant of the semiconductor light-emitting structure. Claim 23 A method for manufacturing a nanorod light-emitting device according to claim 21, wherein the difference in the lattice constant of the passivation film to an integer multiple of the lattice constant of the semiconductor light-emitting structure is within ±30% of the integer multiple of the lattice constant of the semiconductor light-emitting structure. Claim 24 A method for manufacturing a nanorod light-emitting device according to claim 18, wherein the energy bandgap of the passivation film is larger than the energy bandgap of the semiconductor light-emitting structure. Claim 25 In claim 18, the passivation film is ZrO, SrO, MgO, BaO, CeO2, Gd2O3, CaO, HfO2, TiO2, AlO x , BaN, SiN, TiN, CeN, AlN, ZnSe, ZnS, AlGaN, and Al x Ga 1-x A method for manufacturing a nanorod light-emitting device comprising at least one material among As (x ≥ 0.9). Claim 26 A method for manufacturing a nanorod light-emitting device according to claim 18, wherein the thickness of the passivation film is within the range of 5 nm to 20 nm. Claim 27 A method for manufacturing a nanorod light-emitting device according to claim 18, further comprising the step of first forming a protective film to directly surround the sidewalls of the plurality of semiconductor light-emitting structures before forming the passivation film, wherein the passivation film is formed to surround the semiconductor light-emitting structure and the protective film, and the protective film comprises an insulating crystalline material having the same crystalline structure as the crystalline structure of the semiconductor light-emitting structure. Claim 28 A method for manufacturing a nanorod light-emitting device according to claim 27, wherein the energy bandgap of the protective film is greater than the energy bandgap of the semiconductor light-emitting structure, and the energy bandgap of the passivation film is equal to or greater than the energy bandgap of the protective film. Claim 29 A method for manufacturing a nanorod light-emitting device according to claim 27, wherein the thickness of the protective film is within the range of 0.5 nm to 5 nm. Claim 30 A method for manufacturing a nanorod light-emitting device according to claim 18, further comprising the step of forming an insulating film surrounding the sidewalls of the passivation film, wherein the insulating film comprises an amorphous material having insulating properties. Claim 31 A method for manufacturing a nanorod light-emitting device according to claim 30, wherein the thickness of the insulating film is within the range of 40 nm to 70 nm. Claim 32 A method for manufacturing a nanorod light-emitting device according to claim 30, wherein the energy bandgap of the insulating film is larger than the energy bandgap of the passivation film.

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