Display apparatus

Abstract

A display device according to an embodiment of the present specification can implement a narrow bezel by forming a common electrode wiring for applying voltage to a light-emitting element as a shielding layer or an anode electrode.

Description

Technology Field

[0001] The present specification relates to a display device, and more specifically, to a display device that implements a narrow bezel by forming a common electrode wiring into a shielding layer or an anode electrode. Background Technology

[0002] Display devices that display images on TVs, monitors, smartphones, tablet PCs, laptops, etc., are used in various methods and forms.

[0003] Following the Liquid Crystal Display Device (LCD) currently in use among display devices, the scope of use and application of Organic Light Emitting Display Devices (OLEDs) is gradually expanding.

[0004] A display device comprises a plurality of light-emitting elements or liquid crystals to realize an image, and thin-film transistors for individually controlling the operation of each light-emitting element or liquid crystal, so as to display an image to be displayed on a substrate.

[0005] Among display devices, an organic light-emitting display device includes a thin-film transistor for driving pixels and a light-emitting element that receives a signal from the thin-film transistor and generates light.

[0006] A light-emitting device is configured to include an anode electrode that applies voltage to a light-emitting layer and a cathode electrode that applies a common electrode. The light-emitting layer is positioned between the anode electrode and the cathode electrode, so that holes injected from the anode electrode move to the light-emitting layer and electrons injected from the cathode electrode move to the light-emitting layer, and electrons and holes recombine in the light-emitting layer to generate excitons. As the excitons change from an excited state to a ground state, fluorescent molecules in the light-emitting layer emit light, thereby forming an image.

[0007] The anode electrode of the light-emitting device is connected to a thin-film transistor, and a voltage is applied to drive the light-emitting layer. Then, the cathode electrode of the light-emitting device is connected to a common electrode wiring, and a low-potential common voltage is applied. The problem to be solved

[0008] An organic light-emitting display device connects a data driver and a cathode electrode with a common electrode wiring to apply a low-potential common voltage to the cathode electrode of a light-emitting element.

[0009] Since common electrode wiring is formed with a thick width to reduce resistance and allow for constant current flow, there is a problem in that it is difficult to reduce the bezel size. means of solving the problem

[0010] A display device according to an embodiment of the present specification includes a substrate having a display area on which an image is displayed and a non-display area surrounding the display area, and may include a driving thin-film transistor disposed on the display area, a light-emitting element layer disposed above the driving thin-film transistor, a shielding layer disposed below the driving thin-film transistor, a first common electrode wiring disposed on the non-display area, a second common electrode wiring disposed below the first common electrode wiring, and a common electrode connection wiring disposed above the first common electrode wiring. Additionally, the shielding layer and the second common electrode wiring may be disposed on the same layer.

[0011] A display device according to another embodiment of the present specification may include a substrate having a display area on which an image is displayed and a non-display area surrounding the display area, a driving thin-film transistor disposed on the display area, a light-emitting element layer disposed on top of the driving thin-film transistor, a first common electrode wiring disposed on the non-display area, and a first layer disposed on the display area and connected to the first common electrode wiring. The first layer may have a mesh structure.

[0012] Specific details of other embodiments are included in the detailed description and drawings. Effects of the invention

[0013] According to an embodiment of the present specification, the common electrode wiring can be formed as a shielding layer or an anode electrode so that the common electrode wiring can be placed on an area where a gate driver is located or on a display area. Accordingly, the non-display area placed on both sides of the display device can be reduced to realize a narrow bezel.

[0014] The effects of this specification are not limited to those mentioned above, and other unmentioned effects will be clearly understood by those skilled in the art from the description below. Brief explanation of the drawing

[0015] FIG. 1 is a cross-sectional view according to an embodiment of the present specification. FIG. 2a is a plan view according to an embodiment of the present specification. Figure 2b is a cross-sectional view along line II' of Figure 2a. FIG. 3a is a plan view according to another embodiment of the present specification. Figure 3b is a cross-sectional view along the line II-II' of Figure 3a. FIG. 4a is a plan view according to another embodiment of the present specification. Figure 4b is a cross-sectional view along the line III-III' of Figure 4a. FIG. 5a is a plan view according to another embodiment of the present specification. Figure 5b is a cross-sectional view along the line IV-IV' of Figure 5a. Specific details for implementing the invention

[0016] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims.

[0017] The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining embodiments of the present invention are exemplary, and therefore the present invention is not limited to the depicted details. Throughout the specification, the same reference numerals refer to the same components. Furthermore, in describing the present invention, if it is determined that a detailed description of related prior art may unnecessarily obscure the essence of the present invention, such detailed description is omitted. Where terms such as "includes," "has," or "is made up" are used in the present invention, other parts may be added unless "only" is used. When a component is expressed in the singular, it includes cases where it is included in the plural unless specifically stated otherwise.

[0018] In interpreting the components, they are interpreted to include a margin of error even in the absence of a separate explicit statement.

[0019] In the case of describing a positional relationship, for example, when the positional relationship between two parts is described using expressions such as 'on,' 'upper,' 'lower,' or 'next to,' one or more other parts may be located between the two parts unless 'immediately' or 'directly' is used.

[0020] When an element or layer is referred to as "on" another element or layer, it includes cases where another layer or element is placed directly on top of or in between.

[0021] Additionally, terms such as "first," "second," etc. are used to describe various components, but these components are not limited by these terms. These terms are used merely to distinguish one component from another. Accordingly, the first component mentioned below may be the second component within the technical scope of the present invention.

[0022] Throughout the specification, the same reference numerals refer to the same components.

[0023] The size and thickness of each component shown in the drawings are illustrated for convenience of explanation, and the present invention is not necessarily limited to the size and thickness of the illustrated components.

[0024] The features of each of the various embodiments of the present invention may be combined or combined with one another, either partially or wholly, and may technically enable various interlocking and operation. Each embodiment may be implemented independently of one another or may be implemented together in an associated relationship.

[0025] The display device of this specification may be applied to an organic light-emitting display device, but is not limited thereto, and may be applied to various display devices such as LED displays or quantum dot displays.

[0026] The present invention will be described below with reference to the drawings.

[0027] FIG. 1 is a cross-sectional view of a display device according to an embodiment of the present specification.

[0028] FIG. 2a is a plan view of a display device according to an embodiment of the present specification.

[0029] Figure 2b is a cross-sectional view along line II' of Figure 2a.

[0030] Referring to FIGS. 1, FIGS. 2a and FIGS. 2b, the display device (10) may include a substrate (100), a thin-film transistor layer (110), a light-emitting element layer (120), an encapsulation portion (130), a touch wiring (140), an adhesive layer (150), and a front member (200).

[0031] The substrate (100) is a supporting member for supporting other components of the display device (10) and may be made of an insulating material. For example, the substrate (100) may be made of glass or resin, etc. Additionally, the substrate (100) may be made of a polymer or plastic such as polyimide (PI), etc., or may be made of a material having flexibility.

[0032] A substrate (100) may include a display area (AA) and a non-display area (NA). The display area (AA) is an area for displaying an image. A plurality of subpixels for displaying an image and a driving circuit for driving the plurality of subpixels may be disposed in the display area (AA). The non-display area (NA) may be an area surrounding the display area (AA). The non-display area (NA) may be an area where no image is displayed. For example, the non-display area (NA) is an area where various connecting wires and driving parts for driving the plurality of subpixels disposed in the display area (AA) are disposed.

[0033] The bezel may be a non-display area surrounding the display area (AA) in a set product to which the display device (10) is applied. The non-display area (NA) of the substrate (100) and the bezel may be the same area.

[0034] A thin film transistor layer (110) may be disposed on a substrate (100). The thin film transistor layer (110) may include a plurality of insulating layers, a planarization film, and a driving thin film transistor (TFT). The driving thin film transistor (TFT) may include a gate electrode (G), an active layer (ACT), a source electrode (S), and drain electrodes (D1, D2).

[0035] A light-emitting element layer (120) may be disposed on a thin-film transistor layer (120). The light-emitting element layer (120) includes a light-emitting element comprising a first electrode (121), a light-emitting layer (122), and a second electrode (123), and a bank layer (124). The light-emitting element may correspond to a display area (AA) of the substrate (110). The light-emitting element may emit light by a high-potential data voltage supplied to the second electrode (123) through a driving thin-film transistor (TFT) and a low-potential common voltage supplied to the first electrode (121). Light generated from the light-emitting element may be emitted toward the front member (200) or emitted in the opposite direction.

[0036] Each of the plurality of subpixels is an individual unit that emits light, and a light-emitting element may be disposed in each of the plurality of subpixels. The plurality of subpixels may include red subpixels, green subpixels, blue subpixels, and white subpixels, but are not limited thereto. To drive the plurality of subpixels, a driving circuit including various thin-film transistors and storage capacitors, and signal wiring, etc., may be included. For example, the driving circuit may be composed of various components such as driving thin-film transistors, switching thin-film transistors, and storage capacitors. Furthermore, the signal wiring may consist of gate wiring and data wiring, but is not limited thereto.

[0037] Multiple subpixels may be arranged in each region where multiple data lines and multiple gate lines intersect. Each of the multiple subpixels may include a light-emitting element and a driving circuit that drives the light-emitting element.

[0038] For example, the driving circuit may include a driving thin-film transistor (TFT) for controlling the amount of current flowing through the light-emitting element, a switching thin-film transistor for setting the voltage between the gate electrode and the source electrode of the driving thin-film transistor (TFT), and a storage capacitor. The switching thin-film transistor is turned on in response to a gate signal from the gate wiring, thereby allowing the data voltage from the data wiring to be applied to one electrode of the storage capacitor. The driving thin-film transistor (TFT) can control the amount of current supplied to the second electrode (123) of the light-emitting element according to the magnitude of the voltage charged in the storage capacitor, thereby controlling the amount of light emitted by the light-emitting element.

[0039] The amount of light emitted by the light-emitting element is proportional to the amount of current supplied from the driving thin-film transistor (TFT). A high-potential data voltage applied to the driving thin-film transistor (TFT) can be applied to the second electrode (123), and the amount of light emitted can be controlled by adjusting the magnitude of the high-potential data voltage applied to the second electrode (123) according to the voltage of the storage capacitor connected to the driving thin-film transistor (TFT).

[0040] A driving unit for applying a driving signal and a driving voltage to a driving circuit included in each of a plurality of subpixels may be placed in a non-display area (NA). For example, the driving unit may include a data driving unit (160) and a gate driving unit (119). The data driving unit (160) may generate a data signal by converting digital video data (RGB) input from a timing controller located outside the substrate (100) into an analog gamma compensation voltage.

[0041] The data driving unit (160) may include a power supply unit for supplying a low potential voltage to the first electrode (121) and a high potential voltage to the second electrode (123). The data driving unit (160) may be formed as a driving chip and mounted in the non-display area (NA) of the substrate (100) or formed outside the display device (10) and connected to the display device (10).

[0042] The gate driver (119) can be formed as a driver chip and mounted on the non-display area (NA) of the substrate (100), or can be formed directly on both non-display areas (NA) of the display device (10) using a GIP (gate driver in panel) method.

[0043] The data signal output from the data driver (160) can be supplied to the data wires. The gate driver (119) can sequentially supply a gate signal synchronized with the data signal to the gate wires to select the subpixels of the display device (100) on which the data signal is written.

[0044] The first electrode (121) of the light-emitting element included in each of the plurality of subpixels is connected to a low-potential power source through a common electrode wiring to receive a low-potential common voltage, and the second electrode (123) is connected to a high-potential power source through a driving thin-film transistor (TFT) to receive a high-potential data voltage. The low-potential common voltage may be a voltage that is commonly applied to the entire first electrode (123).

[0045] An encapsulation portion (130) may be disposed on the thin-film transistor layer (110) and the light-emitting element layer (120). The encapsulation portion (130) protects the thin-film transistor layer (110) and the light-emitting element layer (120) from external shocks and prevents oxygen or moisture from penetrating into the thin-film transistor layer (110) and the light-emitting element layer (120). The encapsulation portion (130) may include at least one inorganic film and an organic film, but is not limited thereto.

[0046] The touch wiring (140) is placed on the bag portion (130). The touch wiring (140) can detect touch input input to the display device (10). The touch input may be input by a user's finger or a touch pen. Since the touch wiring (140) is formed directly on the front surface of the bag portion (130), a separate adhesive member for attaching the touch wiring (140) may be omitted. The touch wiring (140) may include a first touch wiring and a second touch wiring. The first touch wiring and the second touch wiring may have a metal mesh structure.

[0047] An adhesive layer (150) is placed on the touch wiring (140). The adhesive layer (150) can adhere the front surface of the substrate (100), on which the thin film transistor layer (110), light-emitting element layer (120), encapsulation portion (130), and touch wiring (140) are placed, to the front member (200). The adhesive layer (150) may be an optically clear resin layer (OCR) or an optically clear adhesive film (OCA), but is not limited thereto.

[0048] The front member (200) is placed on the upper surface of the substrate (100) by means of an adhesive layer (150). The front member (200) may be a cover glass or a cover window that covers the substrate (100). Since the front member (200) overlaps with the area displaying the image, it may be a transparent plastic material, a transparent glass material, or a sealing film (protective film) that can transmit the image. A black matrix may be placed on the lower surface of the front member (200) to prevent visibility of the non-display area (NA).

[0049] Referring to FIG. 2a and FIG. 2b, a plurality of subpixels are arranged in a display area (AA), and a non-display area (NA) surrounding the display area (AA) may be arranged with a gate driver (119) that supplies a gate signal to a plurality of subpixels and a data driver (160) that supplies a data signal and a driving voltage.

[0050] A plurality of subpixels placed in the display area (AA) may include a driving thin-film transistor (TFT) and a light-emitting element. The driving thin-film transistor (TFT) may be placed on a substrate (100).

[0051] A buffer film may be disposed between the substrate (110) and the thin-film transistor (TFT). The buffer film can prevent moisture or impurities from penetrating through the substrate (110). The buffer film may include a multi-buffer film (111) and / or an active buffer film (112). The multi-buffer film (111) or the active buffer film (112) may be composed of a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0052] A shielding layer (SM) may be disposed between the multi-buffer layer (111) and the active buffer layer (112) or below the buffer layer. The shielding layer (SM) is composed of a conductive metal layer and can block light. The active layer (ACT) disposed on the shielding layer (SM) may include an oxide semiconductor. The oxide semiconductor may perform photocatalytic action when light is incident, so that a channel can be formed by activation even when the gate is off. Accordingly, the driving thin-film transistor (TFT) can operate even without a signal being applied to it, so the driving thin-film transistor (TFT) may malfunction.

[0053] Therefore, to prevent light from being incident on the active layer (ACT), a shielding layer (SM) can be placed below the active layer (ACT) in a first direction, which is the Z-axis direction.

[0054] The shielding layer (SM) may be in a floating state not connected to the source electrode (S) or gate electrode (G) of the driving thin-film transistor (TFT), and may be connected to the data driving unit (160) to apply a data voltage.

[0055] The shielding layer (SM) may be composed of a conductive material, for example, molybdenum (Mo), copper (Cu), aluminum (Al), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but is not limited thereto.

[0056] A driving thin-film transistor (TFT) disposed on an active buffer film (112) may include an active layer (ACT), a gate electrode (GE), a source electrode (S), a first drain electrode, and a second drain electrode (D2). The source electrode (S) and the drain electrode (D) may be interchanged depending on the driving method of the thin-film transistor. The first drain electrode (D1) and the second drain electrode (D2) of this specification may also be the first source electrode and the second source electrode.

[0057] The active layer (ACT) is disposed on the active buffer film (112). The active layer (ACT) is a region where a channel is formed when the driving thin-film transistor (TFT) is driven. The active layer (ACT) may include a channel region, a source region, and a drain region. The active layer (ACT) may be made of a semiconductor material such as an oxide semiconductor, amorphous silicon, or polysilicon, but is not limited thereto.

[0058] A gate insulating film (113) is disposed on the active layer (ACT). The gate insulating film (113) is an insulating layer for insulating the active layer (ACT) and the gate electrode (G), and may be composed of a single layer or multiple layers of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0059] The gate electrode (G) and gate wiring may be disposed on the gate insulating film (113). The gate electrode (G) may be disposed on the gate insulating film (113) so as to overlap with the channel region of the active layer (ACT). The gate electrode (G) and gate wiring may be composed of a conductive material, for example, copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy or stacked structure thereof, but are not limited thereto.

[0060] An interlayer insulating film (114) may be disposed on the gate electrode (G) and the gate wiring. Contact holes may be formed in the interlayer insulating film (114) and the gate insulating film (113) for the source electrode (S) and the first drain electrode (D1), respectively, to be connected to the active layer (ACT). The interlayer insulating film (114) may be composed of a single layer or multiple layers of inorganic materials such as silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0061] A source electrode (S), a first drain electrode (D1), and data wiring can be disposed on an interlayer insulating film (114). The source electrode (S) and the first drain electrode (D1) can be electrically connected to an active layer (ACT) through contact holes in the interlayer insulating film (114) and the gate insulating film (113).

[0062] The source electrode (S), the first drain electrode (D1), and the data wiring may be composed of a conductive material, for example, copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or an alloy thereof, but are not limited thereto. The source electrode (S) and the first drain electrode (D1) may be composed of a stacked structure of titanium (Ti) and aluminum (Al). For example, the source electrode (S) and the first drain electrode (D1) may be formed of a stacked structure of titanium (Ti) / aluminum (Al) / titanium (Ti).

[0063] A protective film (115) for insulating a driving thin-film transistor (TFT) may be disposed on the source electrode (S), the first drain electrode (D1), and the data wiring. The protective film (115) may be formed of an inorganic film, for example, a silicon oxide film (SiOx), a silicon nitride film (SiNx), or a combination thereof, but is not limited thereto.

[0064] A first flattening film (116) may be disposed on the protective film (114) to flatten the step caused by the driving thin-film transistor (TFT). The first flattening film (116) may be formed from an organic film such as an acrylic resin, a polyimide resin, an epoxy resin, a phenolic resin, and a polyamide resin.

[0065] A second drain electrode (D2) or a second electrode (123) of a light-emitting element may be disposed on the first flattening film (116). If the second electrode (123) of a light-emitting element is disposed on the first flattening film (116), the second drain electrode (D2) may not be formed. In a structure where the second drain electrode (D2) is not formed, the second flattening film (117) may also not be formed.

[0066] The second drain electrode (D2) can be electrically connected to the first drain electrode (D1) through the contact hole of the first flattening film (116).

[0067] A second planarization film (117) may be disposed on the second drain electrode (D2). The second planarization film (117) may be disposed to increase the distance between the driving thin-film transistor (TFT), various signal wirings, and the light-emitting element layer (120) in order to reduce signal interference.

[0068] A contact hole may be formed in the second planarization film (117) to expose the second drain electrode (D2). The first planarization film (116) and the second planarization film (117) may be made of organic material. For example, the first planarization film (116) and the second planarization film (117) may be composed of a single layer or multiple layers of polyimide or photoacryl, but are not limited thereto.

[0069] A thin film transistor layer (110) can be configured by including a driving thin film transistor (TFT), a buffer film (111, 112), a shielding layer (SM), a gate insulating film (113), an interlayer insulating film (114), a protective film (115), a first planarization film (116), and a second planarization film (117).

[0070] The light-emitting element layer (120) may be disposed on the second planarization film (117). The light-emitting element layer (120) may include a light-emitting element and a bank (124).

[0071] The light-emitting element can control the amount of light emitted from the light-emitting layer (122) by a data signal supplied from a driving thin-film transistor (TFT). The light-emitting element includes a first electrode (121), a light-emitting layer (122), and a second electrode (123). The second electrode (123) is disposed below the first electrode (121), and the light-emitting layer (122) can be disposed between the first electrode (121) and the second electrode (123).

[0072] Here, the first electrode (121) may be a cathode electrode and the second electrode (123) may be an anode electrode, but is not limited thereto. The first electrode (121) may be an anode electrode and the second electrode (123) may be a cathode electrode.

[0073] The display device (10) can be implemented in a top emission or bottom emission manner. In the case of a top emission method, a reflective layer may be disposed below the second electrode (123) to reflect light emitted from the light-emitting layer (122) toward the first electrode (121). For example, the reflective layer may include a material with excellent reflectivity such as aluminum (Al) or silver (Ag), but is not limited thereto. Conversely, in the case of a bottom emission method, the second electrode (123) may be made only of a transparent conductive material. Hereinafter, the display device (10) according to the embodiment of the present specification will be described assuming that it is a top emission method.

[0074] The second electrode (123) may be placed on the second planarization film (117). The second electrode (123) may correspond to each of a plurality of subpixels. The second electrode (123) may be electrically connected to the second drain electrode (D2) of the thin-film transistor (TFT) through a contact hole formed in the second planarization film (117). In the case where the structure is not formed with the second drain electrode (D2), the second electrode (123) may be electrically connected to the first drain electrode (D1) on the first planarization film (126).

[0075] The second electrode (123) may be made of a conductive material with a high work function or a highly reflective material to supply holes to the light-emitting layer (122). For example, the second electrode (123) may be formed by stacking at least one material among indium tin oxide (ITO), indium zinc oxide (IZO), aluminum (Al), silver (Ag), platinum (Pt), gold (Au), tungsten (W), tantalum (Ta), copper (Gu), tin (Sn), and lead (Pb), but is not limited thereto.

[0076] A bank (124) is disposed on the second electrode (123) and the second planarization film (117). The bank (124) may be formed on the second planarization film (117) so as to expose the center portion of the second electrode (123) and cover the edges. The bank (124) may be an insulating layer disposed between a plurality of subpixels to distinguish a plurality of subpixels. The bank (124) may be an organic insulating material. For example, the bank (124) may be made of polyimide, acryl, or benzocyclobutene (BCB)-based resin, but is not limited thereto.

[0077] The light-emitting layer (122) may be disposed on the second electrode (123) and the bank (124). The light-emitting layer (122) may be formed across the entire surface of the substrate (110) or may be formed separately on each of the second electrodes (123). The light-emitting layer (122) may be a common layer formed in common across a plurality of subpixels. The light-emitting layer (122) may be an organic layer for emitting light of a specific color. The light-emitting layer (122) may further include various layers such as a hole transport layer, a hole injection layer, a hole blocking layer, an electron injection layer, an electron blocking layer, and an electron transport layer.

[0078] The first electrode (121) may be disposed on the light-emitting layer (122). The first electrode (121) may be formed as a single layer over the entire surface of the substrate (110). For example, the first electrode (121) may be a common layer formed in common across a plurality of subpixels. Since the first electrode (121) supplies electrons to the light-emitting layer (122), it may be made of a conductive material with a low work function. The first electrode (121) may be formed of a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), for example, a metal alloy such as MgAg, or a ytterbium (Yb) alloy, and may further include a metal doping layer, but is not limited thereto.

[0079] In the non-display area (NA), a gate driver (119) may be formed in the same layer as the thin-film transistor layer (11) in a GIP (gate driver in panel) manner. The gate driver (119) is connected to a gate wiring and is a component for applying a gate signal to a plurality of subpixels within a display area (AA), and may be placed in the non-display area (NA) adjacent to the display area (AA).

[0080] The gate driver (119) can be formed directly on both non-display areas (NA) of the substrate (100). The gate driver (119) can be configured in the form of a thin-film transistor, such as an active layer material of a driving circuit, a source electrode material, a gate electrode material, and a storage capacitor material.

[0081] The data driving unit (160) can be mounted in the form of a driving chip or a COF (chip on film) on the lower side of the substrate (100).

[0082] The data driving unit (160) may use the first common electrode wiring (171) and the common electrode connecting wiring (173) to apply a low-potential common voltage to the first electrode (121) of the light-emitting element layer (120).

[0083] The first common electrode wiring (171) is arranged to surround the display area (AA) on the upper, left, and right sides of the substrate (100) and can be connected to the first electrode (121) so that a uniform voltage is applied to the first electrode (121) which is arranged over the entire display area (AA).

[0084] The first common electrode wiring (171) can be connected to the data driving unit (160) by extending the left and right ends to the data driving unit (160).

[0085] In order to connect a data driving unit (160) in the form of a driving chip to a substrate (100), a power pad may be formed on the substrate (100). The upper surface of the power pad is connected to the data driving unit (160), and one side is connected to the first common electrode wiring (171), so that a driving voltage generated from the data driving unit (160) can be applied to the first common electrode wiring (171).

[0086] The power pad can be formed on the same layer as the source electrode (S) located on the upper part of the driving thin-film transistor (TFT) with the same material to facilitate connection with the data driving unit (160) and to have low resistance. Alternatively, the power pad may be formed as a single layer or a stacked structure of two or more of the source electrode (S) material, the first electrode material (121), the second electrode (123) material, and the gate electrode (G) material.

[0087] If the first common electrode wiring (171) connected to the power pad is also formed on the same layer as the power pad, there is no need to form a contact hole to connect the power pad and the first common electrode wiring (171), so the manufacturing process can be simplified.

[0088] In addition, if the power pad and the first common electrode wiring (171) are integrally formed on the same layer, the overall resistance is lowered, and a structure robust against electrostatic discharge (ESD) can be provided. Therefore, the first common electrode wiring (171) can also be formed on the same layer using the same material as the source electrode (S).

[0089] The first common electrode wiring (171) may be formed as a single layer or a stacked structure of two or more materials, including a source electrode (S) material, a first electrode material (121), a second electrode (123) material, and a gate electrode (G) material. When the power pad and the first common electrode wiring (171) are formed in different layers with different materials, they can be connected using a contact hole.

[0090] The first common electrode wiring (171) must be able to apply voltage uniformly to the first electrode (121), which is formed wide enough to cover the entire display area (AA). Accordingly, the first common electrode wiring (171) can have low resistance so that there is no current loss, and the wiring width can be formed thick so that there is no voltage drop that is inconsistent or suddenly drops. The wiring width of the first common electrode wiring (171) can be formed to be 150 μm or more.

[0091] Since the first common electrode wiring (171) is formed on the same layer as the gate driving unit (119), it can be placed in an outer region of the gate driving unit (119).

[0092] Accordingly, a common electrode connection wire (173) may be disposed on the upper part of the gate driving unit (119) for connecting the first common electrode wiring (171) and the first electrode (121). Alternatively, for connecting the first common electrode wiring (171) and the first electrode (121), the first electrode (121) may be formed by extending it to the area where the first common electrode wiring (171) is disposed.

[0093] When connecting the first common electrode wiring (171) and the first electrode (121) with a common electrode connecting wiring (173), the common electrode connecting wiring (173) can be placed between the first common electrode wiring (171) and the first electrode (121).

[0094] One side of the common electrode connection wiring (173) is connected to the first common electrode wiring (171) through the first contact hole (CH1), and the other side can be connected to the first electrode (121) through the second contact hole (CH2).

[0095] The common electrode connection wiring (173) may be formed of a material different from the material constituting the gate driver (119) to avoid contact with the gate driver (119). For example, it may be formed of the material of the second electrode (123) or the material of the second drain electrode (D2).

[0096] When the common electrode connecting wire (173) is formed on the same layer with the same material as the second electrode (123), a common electrode connecting electrode (172) is disposed between the first common electrode wiring (171) and the common electrode connecting wire (173) to connect the first common electrode wiring (171) and the common electrode connecting wire (173). The common electrode connecting electrode (172) can be formed on the same layer with the same material as the second drain electrode (D2).

[0097] In order to connect the common electrode connection wiring (173) and the first common electrode wiring (171), a first contact hole (CH1) can be formed by removing a portion of the protective film (115) placed on the non-display area (NA) and the first flattening film (116) or the second flattening film (117).

[0098] In addition, to connect the common electrode connection wiring (173) and the first electrode (121), a portion of the bank layer (124) placed on the non-display area (NA) can be removed to form a second contact hole (CH2).

[0099] FIG. 3a is a plan view of another embodiment of the present specification. FIG. 3b is a cross-sectional view along the line II-II' of FIG. 3a.

[0100] Referring to FIG. 3a and FIG. 3b, an embodiment of the present specification can reduce the width of the first common electrode wiring (171) to reduce the non-display area (NA). In addition, to compensate for the reduced wiring width of the first common electrode wiring (171), a second common electrode wiring (174) having a wide width can be added and connected to the first common electrode wiring (171).

[0101] When a second common electrode wiring (174) having a wide width is connected to a first common electrode wiring (171) with a reduced wiring width, it can have a resistance level equal to that of the first common electrode wiring (171) of FIG. 2 and a characteristic that allows a constant voltage to be applied without voltage drop.

[0102] The second common electrode wiring (174) may be formed in a layer different from the layer constituting the gate driving unit (119) so as not to come into contact with the gate driving unit (119), just like the common electrode connection wiring (173). For example, the second common electrode wiring (174) may be formed in the same layer as the shielding layer (SM) or in the same layer as the second drain electrode (D2).

[0103] When the second common electrode wiring (174) is formed on the same layer as the shielding layer (SM), the second common electrode wiring (174) can be placed below the gate driving unit (119) and can be placed overlapping with the gate driving unit (119) in the first direction, which is the Z-axis direction. Therefore, since there is no non-display area (NA) increased by the second common electrode wiring (174), the non-display area (NA) can be reduced.

[0104] In addition, since the second common electrode wiring (174) is positioned at the bottom of the gate driving unit (119), internal and external elements that could affect the gate driving unit (119) can be blocked, thereby protecting the gate driving unit (119).

[0105] When the second common electrode wiring (174) is configured in the same layer as the shielding layer (SM), the second common electrode wiring (174) can be freely placed within the non-display area (AA) below the first common electrode wiring (171).

[0106] The second common electrode wiring (174) can be formed as a single layer of one of molybdenum (Mo), copper (Cu), aluminum (Al), nickel (Ni), titanium (Ti), or chromium (Cr), which is the same material as the shielding layer (SM). In this case, the resistance of the second common electrode wiring (174) may be higher than that of the first common electrode wiring (171), but the resistance can be lowered by forming the width of the second common electrode wiring (174) wide within the non-display area (NA).

[0107] When the first common electrode wiring (171) is formed on the same layer with the same material as the source electrode (S), it can be connected to the second common electrode wiring (174) placed below through a contact hole in which a part of the active buffer film (112), gate insulating film (113), and interlayer insulating film (114) is removed.

[0108] Since a gate driver (119) is disposed between the first common electrode wiring (171) and the first electrode (121), a common electrode connecting wiring (173) may be disposed on the upper part of the gate driver (119) to connect the first common electrode wiring (171) and the first electrode (121). The common electrode connecting wiring (173) may be disposed in a state insulated from the gate driver (119).

[0109] The common electrode connection wiring (173) can be formed on the same layer as the second electrode (123) or the second drain electrode (D2).

[0110] The common electrode connection wiring (173) and the gate driving unit (119) are placed on the non-display area (NA), and the common electrode connection wiring (173) and the gate driving unit (119) can overlap each other in the first direction, which is the Z-axis direction.

[0111] Accordingly, the gate driver (119) can be positioned between the common electrode connection wiring (173) and the second common electrode wiring (174) in the first direction, which is the Z-axis direction. Also, in the second direction, which is the X-axis direction, the gate driver (119) can be positioned between the first common electrode wiring (171) and the driving thin-film transistor (TFT) connected to the first electrode (121).

[0112] The common electrode connection wiring (173) can also block internal and external elements that may affect the gate driver (119) from the upper part of the gate driver (119), thereby protecting the gate driver (119).

[0113] When connecting the first common electrode wiring (171) and the first electrode (121) with the common electrode connecting wiring (173), one side of the common electrode connecting wiring (173) may be connected to the first common electrode wiring (171) through the third contact hole (CH3), and the other side may be connected to the first electrode (121) through the fourth contact hole (CH4). The third contact hole (CH3) may be formed by removing a portion of the protective film (115) and the first flattening film (116) or the second flattening film (117), and the fourth contact hole (CH4) may be formed by removing a portion of the bank layer (124).

[0114] When the second common electrode wiring (174) is connected to the first common electrode wiring (171), the wiring width of the first common electrode wiring (171) can be reduced from 150㎛ to 10㎛. As a result, the width of the non-display area (NA) can be reduced to within 280㎛ when combining the left and right sides. Accordingly, a narrow bezel can be implemented, and there can be advantages in terms of design.

[0115] According to an embodiment of the present specification, the second common electrode wiring (174) is placed in a non-display area (NA), but the second common electrode wiring (174) may also be placed in a display area (AA) with a shielding layer (SM).

[0116] FIG. 4a is a plan view of another embodiment of the present specification. FIG. 4b is a cross-sectional view along the line III-III' of FIG. 4a.

[0117] Referring to FIG. 4a and FIG. 4b, the present embodiment, like the embodiment of FIG. 3, can have the first common electrode wiring (171) formed on the same layer with the same material as the source electrode (S), and the second common electrode wiring (174) formed on the same layer with the same material as the shielding layer (SM).

[0118] According to an embodiment of the present specification, the first common electrode wiring (171) may be placed within a non-display area (NA) between the data driving unit (160) and the display area (AA), and the second common electrode wiring (174) may be placed within the display area (AA).

[0119] One side of the first common electrode wiring (171) is connected to the data driving unit (160), and the other side can be connected to the second common electrode wiring (174) through the fifth contact hole (CH5).

[0120] The first common electrode wiring (171) can be formed along the second direction, which is the X-axis direction, with a thick wiring width greater than a certain thickness so as to have low resistance and no voltage drop. Since the resistance of the first common electrode wiring (171) decreases as the area increases, the length of the first common electrode wiring (171) along the second direction can be formed to be equal to or longer than the width of the display area (AA). Additionally, the width of the first common electrode wiring (171) can be formed to be as large as possible in the area between the display area (AA) and the data driving unit (160) to reduce resistance.

[0121] The first common electrode wiring (171) can be connected to the data driving unit (160) by protruding a portion of the wiring in the third direction, which is the Y-axis direction, toward the data driving unit (160).

[0122] One side of the second common electrode wiring (174) can be connected to the first common electrode wiring (171) through the fifth contact hole (CH5), and the other side can be connected to the first electrode (121) through the sixth contact hole (CH6).

[0123] The second common electrode wiring (174) can be extended from the first common electrode wiring (171) toward a third direction in the Y-axis direction for connection with the first electrode (121) and placed on the display area (AA). According to the embodiment of the present specification, since the second common electrode wiring (174) can be placed on the display area (AA), the non-display area (NA) can be reduced further than the embodiment of FIG. 3.

[0124] The second common electrode wiring (174) can be configured in multiple numbers to lower resistance and apply a uniform low-potential common voltage to the first electrode (121) overall. When the second common electrode wiring (174) is placed in the same layer as the shielding layer (SM) in the display area (AA), the second common electrode wiring (174) can be placed in multiple numbers, avoiding the area where the shielding layer (SM) is placed. Since a high-potential data voltage can be applied to the shielding layer (SM) on the display area (AA), the second common electrode wiring (174) can be placed at a certain distance from the shielding layer (SM).

[0125] A plurality of second common electrode wirings (174) can have one side connected to the first common voltage wiring (171) and the other side extended in the third direction on the upper side. A plurality of second common electrode wirings (174) can be connected to the first electrode (121) at uniform intervals spaced apart from each other by a certain distance.

[0126] The second common electrode wiring (174) placed on the display area (AA) can be placed below the first electrode (121).

[0127] In order to connect the second common electrode wiring (174) and the first electrode (121), a sixth contact hole (CH6) can be formed between the second common electrode wiring (174) and the first electrode (121) to make the connection.

[0128] The sixth contact hole (CH6) can connect the first electrode (121) and the second common electrode wiring (174) by removing one or more of the bank layer (124), the second flattening film (117), the first flattening film (116), the protective film (115), the interlayer insulating film (114), the gate insulating film (113), and the active buffer film (112).

[0129] Although it is possible to directly connect the second common electrode wiring (174) to the first electrode (121) by removing all layers disposed between the second common electrode wiring (174) and the first electrode (121), the depth of the sixth contact hole (CH6) is increased, which may cause the first electrode (121) to become disconnected within the sixth contact hole (CH6). Therefore, one or more of the first layer (181), the connecting electrode (182), the common electrode wiring electrode (183), and the second layer (184) are disposed between the second common electrode wiring (174) and the first electrode (121) to connect the second common electrode wiring (174) and the first electrode (121). By doing so, the problem of the first electrode (121) becoming disconnected within the sixth contact hole (CH6) can be resolved.

[0130] The first layer (181) is disposed between the first electrode (121) and the connecting electrode (182) and can be formed on the same layer with the same material as the second electrode (123).

[0131] A connecting electrode (182) may be disposed on the lower part of the first layer (181), and the connecting electrode (182) may be formed on the same layer with the same material as the second drain electrode (D2).

[0132] A common electrode wiring electrode (183) may be disposed below the connecting electrode (182). The common electrode wiring electrode (183) may be formed on the same layer with the same material as the first common electrode wiring (171).

[0133] A second layer (184) may be disposed between the common electrode wiring electrode (183) and the second common electrode wiring (174). The second layer (184) may be formed on the same layer with the same material as the gate electrode (G).

[0134] According to an embodiment of the present specification, since the first common electrode wiring (171) and the second common electrode wiring (174) for applying a low potential voltage to the first electrode (121) are not placed on the side of the display area (AA), the size of the non-display area (AA) can be reduced. For example, the size can be reduced by 300 μm or more, including the left and right sides of the non-display area (AA).

[0135] FIG. 5a is a plan view of another embodiment of the present specification. FIG. 5b is a cross-sectional view along the line IV-IV' of FIG. 5a.

[0136] The embodiment of FIG. 5 may have a structure similar to the embodiment of FIG. 4. For example, the second common electrode wiring in the same layer as the shielding layer (SM) placed in the display area (AA) may be formed by changing it to the first layer (181) in the same layer as the second electrode (123). For example, a low-potential common voltage generated in the data driving unit (160) may be applied to the first electrode (121) through the common electrode wiring (171) placed in the non-display area (NA) and the first layer (181) placed in the display area (AA).

[0137] Referring to FIG. 5a and FIG. 5b, the common electrode wiring (171) of the embodiment of the present specification is formed on the same layer as the source electrode (S) in the same way as the first common electrode wiring (171) of FIG. 4a, and can be placed in the non-display area (NA) between the data driving unit (160) and the display area (AA).

[0138] The common electrode wiring (171) can be formed along the second direction, which is the X-axis direction, with a thick wiring width greater than a certain thickness so as to have low resistance and no voltage drop.

[0139] And, one side of the first layer (181) can be connected to the common electrode wiring (171) through the seventh contact hole (CH7), and the other side can be connected to the first electrode (121) through the eighth contact hole (CH8).

[0140] The seventh contact hole (CH7) can be connected to the first layer (181) and the common electrode wiring (171) by removing one or more of the second flattening film (117), the first flattening film (116), and the protective film (115). For example, the common electrode wiring (171) can be connected directly from the first layer (181) by removing a plurality of layers disposed between the first layer (181) and the common electrode wiring (171), or the first layer (181) and the common electrode wiring (171) can be connected by placing a connecting electrode between the first layer (181) and the common electrode wiring (171).

[0141] The eighth contact hole (CH8) connecting the other side of the first layer (181) and the first electrode (121) can be formed by removing the bank layer (124) within the display area (AA).

[0142] The first layer (181) may have a mesh structure formed to cover a display area (AA) to lower resistance and apply a uniform low-potential common voltage to the first electrode (121) overall, and may have holes formed in the area overlapping with the light-emitting layer (122) and the second electrode (123) in the first direction.

[0143] For example, the light-emitting element layer (120) may include a first electrode (121), a second electrode (123) disposed below the first electrode (121), and a light-emitting layer (122) disposed between the first electrode (121) and the second electrode (123).

[0144] Since the first layer (181) is placed on the same layer as the second electrode (123) of the light-emitting element layer (120), when the first layer (181) is formed on the display area (AA) or the entire display area (AA), it comes into contact with the second electrode (123) and the light-emitting layer (122) placed on the second electrode (123), so that light emission cannot be controlled, a hole can be formed so that the first layer (181), the second electrode (123), and the light-emitting layer (122) do not overlap in the first direction.

[0145] A display device according to an embodiment of the present specification may be described as follows.

[0146] A display device according to an embodiment of the present specification includes a substrate having a display area on which an image is displayed and a non-display area surrounding the display area, and may include a driving thin-film transistor disposed on the display area, a light-emitting element layer disposed above the driving thin-film transistor, a shielding layer disposed below the driving thin-film transistor, a first common electrode wiring disposed on the non-display area, a second common electrode wiring disposed below the first common electrode wiring, and a common electrode connection wiring disposed above the first common electrode wiring. Additionally, the shielding layer and the second common electrode wiring may be disposed on the same layer.

[0147] According to some embodiments of the present specification, a plurality of sensing electrodes includes a first sensing electrode and a second sensing electrode disposed above the first sensing electrode, and a plurality of gate wirings include a first gate wiring and a second gate wiring disposed above the first gate wiring, and the first gate wiring and the second gate wiring may extend within a second non-display area and be connected to the first sensing electrode and the second sensing electrode, respectively.

[0148] According to some embodiments of the present specification, the light-emitting element layer comprises a first electrode, a second electrode disposed below the first electrode, and a light-emitting layer disposed between the first electrode and the second electrode, and one side of a common electrode connecting wire may be connected to the first common electrode wiring, and the other side may be connected to the first electrode.

[0149] According to some embodiments of the present specification, the common electrode connecting wiring and the second common electrode wiring are arranged on a non-display area and may overlap each other in a first direction.

[0150] According to some embodiments of the present specification, a gate driver disposed on a non-display area is further included, wherein the gate driver is disposed between a common electrode connection wire and a second common electrode wire in a first direction and between a first common electrode wire and a driving thin-film transistor in a second direction different from the first direction.

[0151] According to some embodiments of the present specification, the second common electrode wiring may be placed on the display area.

[0152] According to some embodiments of the present specification, the second common electrode wiring extends in a first direction and a second direction different from the first direction and a third direction different from the first direction on a display area, and may be composed of a plurality of them.

[0153] According to some embodiments of the present specification, the light-emitting element layer comprises a first electrode, a second electrode disposed below the first electrode, and a light-emitting layer disposed between the first electrode and the second electrode, and one side of the first common electrode wiring may be connected to the second common electrode wiring and the other side may be connected to the first electrode.

[0154] According to some embodiments of the present specification, one or more of a first layer and a second layer may be disposed between the first electrode and the second common electrode wiring.

[0155] A display device according to another embodiment of the present specification may include a substrate having a display area on which an image is displayed and a non-display area surrounding the display area, a driving thin-film transistor disposed on the display area, a light-emitting element layer disposed on top of the driving thin-film transistor, a common electrode wiring disposed on the non-display area, and a first layer disposed on the display area and connected to the common electrode wiring. The first layer may have a mesh structure.

[0156] According to some embodiments of the present specification, the light-emitting element layer comprises a first electrode, a second electrode disposed below the first electrode, and a light-emitting layer disposed between the first electrode and the second electrode, and the first layer may be disposed on the same layer as the second electrode.

[0157] According to some embodiments of the present specification, one side of the first layer may be connected to the first electrode, and the other side may be connected to the first common electrode wiring.

[0158] According to some embodiments of the present specification, the mesh structure of the first layer includes holes, and the holes may overlap with the light-emitting layer in a first direction.

[0159] Although embodiments of the present invention have been described in more detail with reference to the attached drawings, the present invention is not necessarily limited to these embodiments and may be modified in various ways within the scope of the technical spirit of the present invention. Accordingly, the embodiments disclosed in the present invention are intended to explain, not to limit, the technical spirit of the present invention, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. The scope of protection of the present invention shall be interpreted by the claims below, and all technical spirits within an equivalent scope shall be interpreted as being included within the scope of rights of the present invention. Explanation of the symbols

[0160] 10: Display device 100: Substrate 110: Thin film transistor layer TFT: Driving thin film transistor 119: Gate driver 160: Data driver 120: Light-emitting element layer 130: Encapsulation layer 140: Touch electrode layer 150: Adhesive layer 200: Front component AA: Display area NA: Undisplayed area 171: First common electrode wiring 172: Common electrode connection electrode 173: Common electrode connection wiring 174: Second common electrode wiring CH1: First contact hole CH2: 2nd contact hole CH3: 3rd contact hole SM: Shielding layer G: Gate electrode ACT: Semiconductor layer S: Source electrode D1: First drain electrode D2: Second drain electrode 111: Multi-buffer membrane 112: Active buffer membrane 113: Gate insulating film 114: Interlayer insulating film 115: Protective barrier 116: First leveling barrier 117: Second planarization film 121: First electrode 122: Emitting layer 123: Second electrode 124: Bank Floor 181: 1st Floor 182: Connecting electrode 183: Common electrode Wiring electrode 184: 2nd floor

Claims

Claim 1 A display device comprising: a substrate including a display area on which an image is displayed and a non-display area surrounding the display area; a driving thin-film transistor disposed on the display area and including a first drain electrode and a second drain electrode disposed on the first drain electrode and connected to the first drain electrode; a light-emitting element disposed on the upper portion of the driving thin-film transistor; a shielding layer disposed on the lower portion of the driving thin-film transistor; a first common electrode wiring disposed on the non-display area; a second common electrode wiring disposed on the lower portion of the first common electrode wiring; a common electrode connecting wiring disposed on the upper portion of the first common electrode wiring; and a common electrode connecting electrode disposed between the first common electrode wiring and the common electrode connecting wiring and connecting the first common electrode wiring and the common electrode connecting wiring, wherein the shielding layer and the second common electrode wiring are disposed on the same layer and the common electrode connecting electrode is made of the same material as the second drain electrode. Claim 2 A display device according to claim 1, wherein the light-emitting element comprises a first electrode, a second electrode disposed below the first electrode, and a light-emitting layer disposed between the first electrode and the second electrode, wherein one side of the common electrode connecting wiring is connected to the first common electrode wiring and the other side is connected to the first electrode. Claim 3 A display device according to claim 1, wherein the common electrode connecting wiring and the second common electrode wiring are arranged on the non-display area and overlap each other in a first direction. Claim 4 A display device according to claim 3, further comprising a gate driver disposed on the non-display area, wherein the gate driver is disposed between the common electrode connection wiring and the second common electrode wiring in the first direction and between the first common electrode wiring and the driving thin film transistor in the second direction different from the first direction. Claim 5 In claim 1, the second common electrode wiring is disposed on the display area, the display device. Claim 6 A display device according to claim 5, wherein the second common electrode wiring extends in a first direction and a second direction different from the first direction and a third direction different from the first direction and the second direction on the display area, and is composed of a plurality of such wires. Claim 7 In claim 5, the light-emitting element comprises a first electrode, a second electrode disposed below the first electrode, and a light-emitting layer disposed between the first electrode and the second electrode, wherein one side of the first common electrode wiring is connected to the second common electrode wiring and the other side is connected to the first electrode, a display device. Claim 8 A display device according to claim 7, further comprising a first layer and a second layer disposed between the first electrode and the second common electrode wiring. Claim 9 In claim 8, the display device wherein the first layer is disposed on the same layer as the first electrode. Claim 10 A display device comprising: a substrate including a display area on which an image is displayed and a non-display area surrounding the display area; a driving thin-film transistor disposed on the display area; a light-emitting element disposed on top of the driving thin-film transistor; a common electrode wiring disposed on the non-display area; and a first layer disposed on the display area and connected to the common electrode wiring, wherein the first layer has a mesh structure and the first layer is composed of a single wiring. Claim 11 In claim 10, the light-emitting element comprises a first electrode, a second electrode disposed below the first electrode, and a light-emitting layer disposed between the first electrode and the second electrode, wherein the first layer is disposed on the same layer as the second electrode, a display device. Claim 12 A display device according to claim 11, wherein one side of the first layer is connected to the first electrode and the other side is connected to the common electrode wiring. Claim 13 In claim 11, the mesh structure of the first layer includes a hole, and the hole overlaps with the light-emitting layer in a first direction, a display device.

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