Tool for substrate handling equipped with an overhead screen, related handling method, and epitaxial reactor

Abstract

A tool (4000) for handling a substrate (3000) according to the present invention comprises a fork (4100); the fork (4100) comprises two arms (4120, 4140) configured to directly or indirectly grip or support one or more substrates (3000) by applying contact lateral and / or vertical forces when in use; and a screen (4500) is provided that is fixed to or can be fixed to the fork (4100) to protrude at a distance above the substrate(s) (3000) when the substrate is gripped or supported by the fork (4100) when in use.

Description

Technology Field

[0001] The present invention relates to a tool for substrate handling equipped with an overhead screen, a related handling method, and an epitaxial reactor using the same.

[0002] Generally, it is assumed that the tool according to the present invention can make contact with a substrate, referred to as "direct handling," or with a substrate support element, referred to as "indirect handling." The most typical embodiment of the present invention is designed for "indirect handling." Background Technology

[0003] In a disclosed epitaxial reactor, a substrate to be processed is introduced into a reaction chamber, the substrate is processed at a high temperature (the processing includes the epitaxial deposition of a semiconductor material on the substrate), and finally, the processed substrate is extracted from the reaction chamber.

[0004] Depending on the case, that is, particularly depending on the substrate material and the semiconductor material to be deposited, the processing temperature may vary, for example, from 600°C (and below) to 1700°C (and above); also, the processing temperature generally depends on the pressure inside the chamber during processing. The temperature outside the chamber, in particular the "storage" temperature inside the epitaxial reactor, is the ambient temperature, for example, generally 20°C to 30°C.

[0005] To reduce process time, particularly reactor cycle time, it may be advantageous to introduce the substrate when the chamber is already significantly hot (i.e., much higher than the ambient temperature) and / or extract the substrate when the chamber is still significantly hot (i.e., much higher than the ambient temperature); in this way, the internal temperature of the chamber can always be maintained at a significantly high level (i.e., not much lower than the process temperature). For example, if epitaxial deposition of single-crystal silicon carbide on a silicon carbide substrate is considered at a pressure of 50 ÷ 200 mbar, the process temperature may be 1500 ÷ 1700°C, and it would be advantageous to introduce and / or extract the substrate when the chamber is at a temperature that falls within, for example, the range of 700 to 1100°C (or higher).

[0006] However, this can cause the substrate to undergo thermal shock. In fact, during the introduction phase, the temperature of the substrate changes from, for example, 25°C to 900°C within a very short period of time (e.g., a few seconds), and during the extraction phase, the temperature of the substrate changes from, for example, 900°C to 25°C within a very short period of time (e.g., a few seconds). Such thermal shock can cause problems, particularly damage, to the substrate. It should be noted that thermal shock essentially affects the upper surface of the substrate, that is, the exposed surface, and creates a temperature difference between the upper and lower surfaces of the substrate.

[0007] The general objective of the present invention is to overcome the above problems.

[0008] The above objective is achieved by a method, tool, and epitaxial reactor having the technical features expressed in the appended claims.

[0009] The idea behind the present invention is to provide a tool having a screen positioned to protrude over a substrate when the substrate is handled by the tool during use. Brief explanation of the drawing

[0010] The present invention will become more readily apparent from the following detailed description, which will be considered together with the accompanying drawings, and in the drawings: FIG. 1 is a schematic diagram (which can be regarded as a plan view) of an embodiment of an epitaxial reactor according to the present invention, FIG. 2a is a (schematic) plan view of an example of the "substrate support device" of the epitaxial reactor of FIG. 1, FIG. 2b is a (schematic) cross-sectional view of the "substrate support device" of FIG. 2a, FIG. 3 is a (schematic) drawing of an embodiment of the robot of the epitaxial reactor of FIG. 1, FIG. 4a is a three-dimensional drawing of an example of a tool according to the present invention usable in the epitaxial reactor of FIG. 1, FIG. 4b is a three-dimensional exploded view of the tool of FIG. 4a, FIG. 4c is a planar side view of the tool of FIG. 4a, FIG. 5 is a possible time diagram of the substrate temperature during the introduction process into the reaction chamber of the epitaxial reactor of FIG. 1, and Figure 6 illustrates a possible time diagram of the substrate temperature during the extraction process from the reaction chamber of the epitaxial reactor of Figure 1. As will be readily understood, there are various methods for substantially implementing the present invention, defined in the preferred principal embodiments of the appended claims and not limited to the detailed description below or the appended claims. Specific details for implementing the invention

[0011] Referring to FIG. 1, an example of an epitaxial reactor (1000) according to the present invention including a so-called "processing assembly" (900) is shown.

[0012] In FIG. 1, an electronic control unit (800) is shown, which, depending on its function, can be considered as part of an epitaxial reactor (1000), i.e., the entire system, or as part of a processing assembly (900), i.e., a subsystem. Generally, it is possible for the epitaxial reactor to include multiple electronic control units, each dedicated to controlling one or more subsystems. In the example of FIG. 1, the electronic control unit (800) is configured to control at least the processing assembly (900), and to this end, receives electrical signals from components of the processing assembly (900) and transmits electrical signals to components of the processing assembly (900) (this is schematically indicated by two large black arrows).

[0013] Generally, an epitaxial reactor comprising an epitaxial reactor according to the present invention includes a control console that can also be considered as part of the control unit of the epitaxial reactor.

[0014] The processing assembly (900) consists of the following four basic components:

[0015] - Reaction chamber (100) for substrate processing,

[0016] - Transfer chamber (200) adjacent to reaction chamber (100),

[0017] - A "load-lock" chamber (300) adjacent to the transfer chamber (200), and

[0018] - Loading / unloading chamber (400) adjacent to the "load lock" chamber (300).

[0019] Alternatively, it should be noted that the chambers (200, 300) can be integrated to form a single chamber.

[0020] In the example of Fig. 1, the chamber (300) is located inside the chamber (400).

[0021] Generally, an epitaxial reactor includes a so-called "gate valve" configured to selectively separate the reactor chambers. In the case of the reactor of FIG. 1, a first "gate valve" (120) is provided between chamber (100) and chamber (200) and a second "gate valve" (not shown in the drawing) is provided between chamber (200) and chamber (300); additionally, a door that is preferably completely sealed is provided to allow an operator to access the interior of chamber (400) to place / remove a substrate and a substrate support (not shown in the drawing).

[0022] The processing assembly (900) further comprises an "external robot" (600) and an "internal robot" (500) illustrated by the symbol in FIG. 1; the robot (600) is used to transport a processed substrate, an unprocessed substrate, and a substrate-free substrate support device between the loading / unloading chamber (400) and the load lock chamber (300); and the robot (500) is used to transport a substrate support device having one or more substrates between the load lock chamber (300) and the reaction chamber (100) through the transport chamber (200).

[0023] In the reactor of FIG. 1, the substrate is placed on the “substrate support device” before the processing process and removed from the “substrate support device” after the processing process; these two operations are performed by a robot (600).

[0024] In the reactor of FIG. 1, a support device with an untreated substrate is transferred from the load lock chamber (300) to the reaction chamber (100) before the processing process, and the same but processed support device with a treated substrate is transferred from the reaction chamber (100) to the load lock chamber (300) after the processing process; these two transfer operations are performed by a robot (500).

[0025] The processing assembly (900) may include a cooling station (210) (optional) adjacent to the transfer chamber (200); the cooling station (210) is configured to accommodate a substrate support device having one or more substrates after the processing process.

[0026] The processing assembly (900) may also include a pre-heating station (220) (optional) adjacent to the transfer chamber (200); the heating station (220) is configured to accommodate a substrate support device having one or more substrates before the processing process.

[0027] The load lock chamber (300) includes a base (310) for supporting a “substrate support device” (with or without a substrate).

[0028] The loading / unloading chamber (400) has at least a first storage area (410) for processed substrates and unprocessed substrates and at least a second storage area (420) for a substrate support device without substrates.

[0029] As mentioned above, in the reactor of FIG. 1, the use of a “substrate support device” is advantageously provided; this is a type of flat (particularly circular) tray having one or more recesses for receiving one or more substrates to be processed, provided with radially protruding edges configured to be gripped or supported.

[0030] The “substrate support device” (2000) of FIG. 2 has a so-called “pocket” recess (2100) that is (nearly) circular to accommodate a substrate (not shown in FIG. 2a but indicated by reference numeral (3000) in FIG. 2b) that is substantially the same shape and size as the recess, and a thin edge (2200) that protrudes radially along its entire circumference to facilitate handling of the “substrate support device.” Specifically, FIG. 2 refers to the case where the substrate has a so-called “flat section,” and an element (2300) may be positioned within this “flat section” within the recess (2100); in fact, the element (2300) is generally integrated within the device (2000).

[0031] The "substrate support device" (2000) of FIG. 2 may also be described by a set of parts as follows (see FIG. 2b in particular). This includes a circular plate-like part, simply called a "plate" (2500), having a seating surface configured to support a substrate (3000); in particular, the seating surface forms the bottom of the recess (2100) having substantially the same shape and size as the substrate; and (if present) a plug (2300) conceptually overlaps the plate (2500). The device (2000) further includes a first edge part (2600) extending axially to completely surround the plate (2500) and form the side wall of the recess (2100) (a small part of this wall is formed by the plug (2300)). The device (2000) includes a second edge portion (2700) that completely surrounds the first edge portion (2600) and extends radially; the second edge portion (2700) can be described as a rim located around the first edge portion (2600). Generally, the plate (2500) is at a lower level than the second edge portion (2700). The edge (2200) substantially corresponds to the second edge portion (2700). The portions described above may be combined to form one or more single parts; for example, the parts (2500, 2600, 2700) may form a single part, or the part (2500) may form a first single part and the parts (2600, 2700) may form a second single part. Additionally, each of the parts described above may be formed by two or more single parts mechanically joined together; an example relating to the plate (2500) is described below.

[0032] The internal robot (500) may include an articulated arm (510) adopted to handle a substrate support device. The external robot (600) may be similar to the internal robot (500).

[0033] The articulated arm (510) includes a first arm member (512) and a second arm member (516), the first arm member (512) is hinge-connected to the second arm member (516), and the first arm member (512) has a first end portion (513) configured to handle a "substrate support device" and a second end portion (514) hinge-connected to the second arm member (516).

[0034] The articulated arm (510) may also include a support plate (520).

[0035] The articulated arm (510) may also include a lifting column (511) mounted on a base plate (520).

[0036] The articulated arm (510) may also include a third arm member (517) hinged to a second arm member (516) at a first end and hinged to a lifting column (511) at a second end.

[0037] The first arm member (512) may generally include or be associated with a so-called "end-effector" (515) configured to grip a "substrate support device" at the first end portion (513); according to the (typical and advantageous) embodiment of FIG. 3, the "end-effector" (515) is composed of a "2-tip fork".

[0038] An embodiment of the tool (4000) according to the present invention (usable in the epitaxial reactor of FIG. 1) is illustrated in detail in FIG. 4. It should be noted that this embodiment of the tool corresponds to a combination of parts of the arm member (512) coupled to the "end effector" (515) in FIG. 3.

[0039] Essentially, the tool (4000) of FIG. 4 includes a screen (4500) positioned to overhang one or more substrates (3000) placed on the support element (2000) at a distance (particularly at a uniform distance that will be evident from below) when the tool (4000) handles the support element (2000) (having one or more substrates).

[0040] As illustrated in FIG. 4, the tool (4000) includes a fork (4100) fixed to the end of a rod-shaped member (4200). The fork (4100) is equipped with two arms (4120, 4140) for directly gripping or supporting a substrate support element (2000) (visible only in FIGs. 4b and 4c); in particular, the arms (4120, 4140) have an "L" shaped cross-section, and accordingly, each shank of the "L" can be positioned below the edge (2200) or edge (2700) (one on one side and one on the other).

[0041] Generally, the tool according to the present invention is configured in such a way that the effect of gripping or supporting (a substrate or support element) is obtained by applying a contact lateral force and / or a vertical force (particularly a vertical force directed from below upward) during use. According to a preferred embodiment, contact occurs only between the arm of the fork and the substrate (particularly the edge of the substrate and / or the lower surface of the substrate) or the substrate support element (particularly the edge of the substrate and / or the lower surface of the substrate).

[0042] Preferably, the fork (4100) is made of quartz to withstand high temperatures.

[0043] Generally, the screen can be fixed to the fork, particularly the arms of the fork; also, the fork, particularly the two arms of the fork, can be configured to allow fixation.

[0044] When the substrate is in a horizontal position during use and is gripped or supported by a tool (4000), particularly by a fork (4100), the screen (4500) of FIG. 4 preferably comprises a slab (4510), particularly a flat plate, configured to be in a horizontal position; in this case, the distance between the upper surface of the substrate(s) and the lower surface of the flat plate (protruding therefrom) is preferably uniform. Note that the plate of the screen may also be pitted in at least the substrate.

[0045] According to the embodiment of FIG. 4, the substrate is indirectly gripped or supported by a tool (4000) when placed on the element (2000); according to an alternative (but less common) embodiment, it may be directly gripped or supported.

[0046] In particular, the plate (4510) is fixed to the arm (4120, 4140) by an element of the screen (4500) not shown in the drawing, for example (a separate element may be provided to prevent the plate (4510) from moving back and forth (i.e., longitudinally) relative to the fork (4100) and to prevent the plate (4510) from moving left and right (i.e., transversely) relative to the fork (4100); preferably, the plate (4510) and the element (2000) (as well as the substrate(s) supported by the support element, if present) are substantially parallel to each other and are placed within a small distance, for example, from 3 mm to 10 mm.

[0047] A screen (not in contact with the substrate(s)) may be configured to store heat in a way that reduces thermal shock by preventing heat transfer by radiation (when in use) or delays the heating of the substrate(s) underneath.

[0048] A screen (not in contact with the substrate(s)) can be configured to shield the substrate underneath from infrared radiation (during use) by preventing heat transfer by conduction and / or convection. For the most common applications of the invention (epitaxial reactors for the deposition of semiconductor materials, particularly silicon and silicon carbide, on substrates between 600°C and 1700°C), it is worth noting that heat transfer by irradiation mainly involves the infrared range, but also occurs to some extent in the visible light range.

[0049] Graphite is a particularly ideal material for screens, especially for flat plates. Sizes particularly suitable for plate thickness fall within the range of 1.5 mm to 3.5 mm.

[0050] According to the embodiment of FIG. 4, the fork and the screen are two separate elements and are manufactured from different materials. However, other embodiments cannot be excluded. For example, the fork and the screen may be integrated into a single machine part or integrated into two parts joined together; these parts may be manufactured from graphite; alternatively, these parts may be manufactured from quartz, for example, the fork may be manufactured from transparent quartz and the screen from opaque quartz and welded together.

[0051] In the description below, for the sake of simplification, it is assumed that the tool (4000) is mechanically coupled to and uncoupled from the support element (2000) within a very short and negligible amount of time.

[0052] However, this operation takes time (e.g., several seconds) and can be described as follows with reference to the tool in Fig. 4.

[0053] To achieve a connection, the fork approaches the support element, and then the arms of the fork slide (forward) under the edge of the support element until they reach the desired end position; as the arms slide, the screen gradually covers any substrate(s) placed on the support element. Then, the fork is raised slightly and the arms are placed under the edge of the support element (at this position, the fork can be considered to have gripped the support element); again, the arms press down on the edge and lift the support element.

[0054] To achieve disengagement, the arm of the fork (the arm of the fork at the desired end position mentioned above, i.e., gripping the support element) is lowered slightly so that it does not lie under the edge of the support element, then slides under the edge (rearwardly) until it is disengaged from the support element; finally, the fork moves away from the support element; and as the arm slides, the screen gradually reveals any substrate(s) placed on the support element.

[0055] The process described below can generally and advantageously be carried out using the tools described in this specification.

[0056] The substrate introduction process according to the present invention may include the following steps as an example (e.g., considering FIGS. 1 and 5):

[0057] I1) A step of adjusting the internal temperature of the reaction chamber (100) to a predetermined temperature lower than the process temperature (typically prior to the start of the processing process),

[0058] I2) A step of positioning a tool (4000) equipped with a screen (4500) on a support element (2000) equipped with a substrate to be processed such that the screen (4500) protrudes over the substrate to be processed (this may occur, for example, in a load lock chamber (300)),

[0059] I3) A step of gripping the support element (2000) by the tool (4000),

[0060] I4) Step of opening the access hatch (120) of the reaction chamber (100),

[0061] I5) A step of moving the tool (4000) together with the support element (2000) until the support element (2000) is inside the reaction chamber (100) (see reference number (110)),

[0062] I6) Step of depositing a support element (2000) inside a reaction chamber (100),

[0063] I7) A step of moving the tool (4000) without a support element (2000) until the tool (4000) is outside the reaction chamber (100) (see reference number (200)),

[0064] I8) A step of closing the access hatch (120) to the reaction chamber (100), and

[0065] I9) A step of adjusting the internal temperature of the reaction chamber (100) to the process temperature.

[0066] At this point, the actual processing can begin.

[0067] In the diagram of FIG. 5, time ti1 corresponds to when the tool (4000) with the substrate is about to enter the reaction chamber (100) (just outside) during step I5); the tool (4000), the element (2000), and the substrate are at ambient temperature, i.e., temperature Ti1, which corresponds to typically 20°C to 30°C, e.g. 25°C.

[0068] In the diagram of FIG. 5, there is a temperature Ti3 corresponding to the aforementioned predetermined temperature. For example, if the process temperature is 1600°C to 1700°C, the temperature Ti3 can typically be 700°C to 1100°C, e.g. 900°C.

[0069] Time ti2 corresponds to when the substrate-free tool (4000) has just exited the reaction chamber (100) during step I7) and the screen (4500) no longer protrudes over the substrate; and at approximately time ti2, the hatch (120) is closed.

[0070] During the time interval between time ti1 and time ti2, the substrate undergoes heating; this heating is slowed by the presence of a screen (4500) on the substrate; thus, thermal shock is reduced. At time ti2, the substrate reaches a temperature Ti2 which is generally lower than the temperature Ti3, for example, a temperature Ti2 which is equal to 60÷80% of the temperature Ti3 expressed in degrees, i.e., Ti2 = [0.6÷0.8]*Te3.

[0071] During the time interval between time ti2 and time ti3, the substrate undergoes additional heating, and this additional heating cannot cause thermal shock because the temperature difference between the chamber and the substrate is relatively small.

[0072] According to the usual case, the time interval between time ti1 and time ti2 can be 20 to 60 seconds.

[0073] According to the usual case, the time interval between time ti2 and time ti3 can be 10-20 seconds.

[0074] It should be noted that heating of the reaction chamber (100) for carrying out the processing process can already begin at time ti2, for example, by reactivating the heating system of the reactor. However, since the interval ti2-ti3 is approximately 10 seconds, while the response time of the heating system of the reactor is approximately 1 minute, such reactivation has little effect on the diagram of FIG. 5 (especially at time ti3) (in other words, a few minutes are required to increase the temperature of the chamber and its contents, for example, from 900°C to 1650°C).

[0075] The substrate extraction process according to the present invention may include the following steps as an example (e.g., considering FIGS. 1 and 6):

[0076] E1) A step of adjusting the internal temperature of the reaction chamber (100) to a predetermined temperature lower than the process temperature (typically after the end of the processing process),

[0077] E2) Step of opening an access hatch (120) to the reaction chamber (100),

[0078] E3) A step of positioning a tool (4000) equipped with a screen (4500) until it is in a reaction chamber (100) (see reference number (110)) and a support element (2000) equipped with a processed substrate, such that the screen (4500) protrudes over the substrate to be processed.

[0079] E4) A step of gripping the support element (2000) by the tool (4000),

[0080] E5) A step of moving the tool (4000) together with a support element (2000) until the tool (4000) is outside the reaction chamber (100) (see reference number (200)), and

[0081] E6) A step of closing the access hatch (120) to the reaction chamber (100).

[0082] At this point, for example, a support element (2000) equipped with a substrate can be placed in the load lock chamber (300), and then a new substrate to be processed in the reaction chamber (100) can be loaded.

[0083] In the diagram of FIG. 6, time te1 corresponds to when, during step E3, the tool (4000) without a substrate is about to enter toward the entrance (which is immediately outside) of the reaction chamber (100); the tool (4000) with the screen (4500) is at ambient temperature, i.e., typically 20°C to 30°C, e.g. 25°C, and the element (2000) and the substrate (as well as the entire reaction chamber (100)) are at temperature Te1, which corresponds to the aforementioned predetermined temperature, typically 700°C to 1100°C, e.g. 900°C in the above case.

[0084] Time te2 corresponds to when the tool (4000) with the substrate has just exited the reaction chamber (100) during step E5; and at approximately time te2, the hatch (120) is closed.

[0085] During the time interval between time te1 and time te2, the screen (4500) protrudes over the substrate. The screen (4500) is manufactured in such a way that it heats up quickly when entering the reaction chamber (100) and thus the initial cooling of the substrate during the time interval between time te1 and time te2 is very small; the temperature Te2 at time te2 may be equal to 85÷95% of the temperature Te1, expressed as a temperature in degrees Celsius, for example, i.e., Te2 = [0.85÷0.95]*Te1.

[0086] Time te3 corresponds, for example, when the tool (4000) leaves the substrate (placed on the support element (2000)) in the loadlock chamber (300). The diagram in FIG. 6 is independent of the time required for the tool to enter the loadlock chamber (300), leave the element (2000), and exit the loadlock chamber (300); such time may be a few seconds (e.g., 4÷5 seconds) and is much lower than the permanent time of the element (2000) in the loadlock chamber (e.g., 50÷300 seconds).

[0087] During the time interval between time te2 and time te3, the screen (4500) protrudes over the substrate and initial cooling of the substrate occurs; the cooling rate is slow because the screen (4500) keeps the substrate warm due to thermal inertia; therefore, the thermal shock is small. At time te3, the temperature Te3 will be a temperature that may be equal to, for example, 30÷50% of the temperature Te1 expressed in degrees Celsius, i.e., Te3 = [0.3÷0.5]*Te1.

[0088] Time te4 corresponds to the time when the element (2000) having a substrate in the loadlock chamber (300) is completely cooled to a temperature Te4 corresponding to an ambient temperature, typically 20°C to 30°C, e.g. 25°C. During the time interval between time te3 and time te34, a second and final cooling of the substrate occurs; and because the temperature difference between the loadlock and the substrate is relatively small, this second and final cooling cannot cause thermal shock.

[0089] According to the general case, the time interval between time te1 and time te2 can be 20-60 seconds.

[0090] According to the general case, the time interval between time ti2 and time ti3 can be 20-60 seconds.

[0091] According to the general case, the time interval between time ti3 and time ti4 can be 50 to 300 seconds.

[0092] The diagrams in FIGS. 5 and 6 show the average temperature of the upper surface of the substrate; the lower surface of the substrate is substantially at the temperature of the support element; and in a steady state, the upper and lower surfaces of each substrate are at the same temperature. The support element has high thermal inertia and therefore its temperature changes slowly, but it still changes both when the element is introduced into the reaction chamber and when the element is extracted from the reaction chamber. Thus, the use of the screen according to the present invention reduces the temperature difference between the surfaces of the substrate.

[0093] The reactor (1000) includes a tool (4000) for handling a substrate, which is an embodiment of the present invention.

[0094] The tool (4000) is used to introduce a substrate into the reaction chamber (100) and to extract the substrate from the reaction chamber (100).

[0095] Generally, it can be said that a substrate (advantageously a substrate placed on a support element) is transferred between a reaction chamber and one or more "positioning stations." In the example of FIG. 1, the most typical "positioning station" is a load lock chamber (300), but any chamber (210) and / or any chamber (220) may also be so.

[0096] As can be understood from the foregoing, the present invention enables a substrate to be loaded into and unloaded from a reaction chamber with limited thermal shock to the substrate without reducing the temperature of the reaction chamber too much. Accordingly, the productivity of the reactor is increased.

Claims

Claim 1 A tool (4000) for handling a substrate (3000), comprising a fork (4100), wherein the fork (4100) comprises two arms (4120, 4140) configured to directly or indirectly grip or support one or more substrates (3000) by applying a contact lateral and / or vertical force when in use; comprising a screen (4500) fixed to or fixable to the fork (4100) to protrude at a distance above the one or more substrates (3000) when the one or more substrates are gripped or supported by the fork (4100) when in use, the fork (4100) is configured to directly grip or support the substrate support element (2000) by applying a contact lateral and / or vertical force to the substrate support element (2000) when in use, and the two arms (4120, 4140) of the substrate support element (2000). A tool for handling a substrate, characterized in that it has an L-shaped cross-section so as to be positioned below the edge, and the screen (4500) comprises: a slab (4510), is made of graphite, is configured to store heat, and is configured to shield from infrared radiation. Claim 2 delete Claim 3 A tool for handling substrates according to claim 1, configured such that when in use, the plate (4510) is in a horizontal position when one or more substrates (3000) are gripped or supported by the fork (4100) and are in a horizontal position. Claim 4 delete Claim 5 delete Claim 6 delete Claim 7 delete Claim 8 In claim 1, the screen (4500) is a tool for handling substrates, which is fixed or fixable to the fork (4100), particularly to the two arms (4120, 4140) of the fork (4100). Claim 9 In claim 1, the fork (4100) is a tool for handling substrates, made of quartz. Claim 10 An epitaxial reactor comprising a tool (4000) for handling a substrate (3000) according to claim 1. Claim 11 An epitaxial reactor according to claim 10, comprising a reaction chamber (100), wherein the tool (4000) is configured to be used to introduce a substrate (3000) into the reaction chamber (100) and / or extract the substrate (3000) from the reaction chamber (100). Claim 12 In claim 10, an epitaxial reactor comprising a substrate positioning station (210, 220, 300), wherein the tool (4000) is configured to be used to bring a substrate (3000) to and / or from the substrate positioning station, and wherein the positioning station (300) is a load-lock chamber (300) or a cooling station (210) or a heating station (220). Claim 13 In claim 10, an epitaxial reactor configured to handle a substrate (3000) disposed on a substrate support element (2000). Claim 14 A method for introducing a substrate (3000) into a reaction chamber (100) of an epitaxial reactor (1000), comprising: I1) adjusting the internal temperature of the reaction chamber (100) to a predetermined temperature lower than a process temperature; I2) positioning a tool (4000) according to claim 1, which is equipped with a screen (4500), on a support element (2000) having one or more substrates (3000) to be processed such that the screen (4500) protrudes over one or more substrates (3000) to be processed; I3) gripping the support element (2000) by the tool (4000); I4) opening an access hatch (120) for the reaction chamber (100); and I5) holding the tool (4000) together with the support element (2000) until the support element (2000) is inside (110) of the reaction chamber (100). A method comprising: a step of moving; I6) a step of placing the support element (2000) inside the reaction chamber (100); I7) a step of moving the tool (4000) without the support element (2000) until the tool (4000) is outside (200) the reaction chamber (100); I8) a step of closing the access hatch (120) to the reaction chamber (100); and I9) a step of adjusting the internal temperature of the reaction chamber (100) to a process temperature. Claim 15 A method for extracting a substrate (3000) from a reaction chamber (100) of an epitaxial reactor (1000), comprising: E1) adjusting the internal temperature of the reaction chamber (100) to a predetermined temperature lower than the process temperature; E2) opening an access hatch (120) to the reaction chamber (100); E3) positioning a tool (4000) according to claim 1 equipped with the screen (4500) until the screen (4500) protrudes over one or more processed substrates (3000) and is located inside (110) the reaction chamber (100) and is located on a support element (2000) equipped with one or more processed substrates (3000); E4) gripping the support element (2000) by the tool (4000); E5) the support until the tool (4000) is outside (200) the reaction chamber (100). A method comprising the steps of moving the tool (4000) together with the element (2000), and E6) closing the access hatch (120) to the reaction chamber (100).

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