Sheath heater and stage

Abstract

A sheath heater comprises a metal sheath, a heater wire disposed within the metal sheath, an insulating material filled within the metal sheath to separate the metal sheath and the heater wire, a lead wire that supplies power to the heater wire, a crimping sleeve that connects the heater wire and the lead wire extending from the end of the metal sheath, a conventional member that covers the end of the metal sheath and on which the crimping sleeve is disposed, and a cover-like member that fits into the conventional member and includes an opening through which the lead wire is inserted and passed, and the end of the metal sheath comprises a first insulating tube including a first through hole through which the heater wire is inserted and passed, and a sealing material that fills the gap between the metal sheath and the first insulating tube, and the sealing material comprises a ceramic binder.

Description

Technology Field

[0001] One embodiment of the present invention relates to a sheath heater. In addition, one embodiment of the present invention relates to a stage equipped with a sheath heater. Background Technology

[0002] Semiconductor devices are installed in almost all electronic devices and play an important role in the functions of electronic devices. A semiconductor device is a device that utilizes the semiconductor properties of silicon, etc. A semiconductor device is constructed by stacking a semiconductor film, an insulating film, and a conductive film on a substrate and patterning these films. These films are stacked using deposition, sputtering, chemical vapor deposition (CVD), or chemical reactions of the substrate, and these films are patterned by a photolithography process. The photolithography process includes the formation of a resist film on the film provided for patterning, exposure of the resist film, formation of a resist mask by development, partial removal of the film by etching, and removal of the resist mask.

[0003] The characteristics of the film described above are largely influenced by the conditions for forming the film or the conditions for patterning. One of these conditions is the temperature of the substrate. In many cases, the temperature of the substrate is controlled by adjusting the temperature of the mounting platform (hereinafter referred to as the "stage") for mounting the substrate. In order to heat the substrate and suppress the temperature distribution within the substrate uniformly, one of the heaters that heats the stage is a sheath heater. For example, Patent Document 1 discloses a stage equipped with a plurality of sheath heaters in which heating wires (heater wires) are arranged within a metal sheath. Prior art literature

[0004] Japanese Published Patent Application No. 2009-91660 Japanese Published Patent Application No. 2021-26857 The problem to be solved

[0005] In a sheath heater, an insulating material is filled inside the metal sheath to prevent short circuits between the metal sheath and the heater wire (see, for example, Patent Document 2). In addition, to prevent moisture absorption and scattering of the insulating material filled inside the metal sheath, the ends of the metal sheath are sealed with an epoxy-based adhesive. When the sheath heater is used in a stage, it is preferable that the ends of the metal sheath be housed within the shaft of the stage. However, there are cases where the temperature inside the shaft becomes high (for example, exceeding 100 degrees). In such cases, the above configuration cannot be applied because the heat resistance temperature of the epoxy-based adhesive is low. Therefore, a sheath heater with improved heat resistance was desired to extend the operating temperature range of the stage.

[0006] One embodiment of the present invention aims to provide a sheath heater with improved heat resistance in consideration of the above problem. In addition, one embodiment of the present invention aims to provide a stage that can be used over a wide temperature range. means of solving the problem

[0007] A sheath heater according to one embodiment of the present invention comprises a metal sheath, a heater wire disposed within the metal sheath, an insulating material filled within the metal sheath to separate the metal sheath and the heater wire, a lead wire that supplies power to the heater wire, a compression sleeve that connects the heater wire and the lead wire extending from the end of the metal sheath, a conventional member that covers the end of the metal sheath and on which the compression sleeve is disposed, and a cover-like member that fits into the conventional member and includes an opening through which the lead wire is inserted and passes. The end of the metal sheath comprises a first insulating tube including a first through hole through which the heater wire is inserted and passes, and a sealing material that fills the gap between the metal sheath and the first insulating tube. The sealing material comprises a ceramic binder.

[0008] The first insulating tube may include two first through holes.

[0009] The sheath heater additionally comprises a second insulating tube having a second through hole, which is disposed within a normal member, and the compression sleeve may be disposed within the second through hole.

[0010] The second insulating tube may include two second through holes.

[0011] The sheath heater additionally includes a locking member that is fixed to the lead wire, and the locking member does not need to be joined to the cover member. The locking member may be fixed to the lead wire by clamping the lead wire.

[0012] The sheath heater may additionally include a third insulating tube disposed between the first insulating tube and the second insulating tube within the ordinary member and including a third through hole through which a heater wire is inserted. The outer diameter of the third insulating tube may be smaller than the diameter of the second through hole.

[0013] At least a portion of the third insulating tube may be embedded into the second through hole. Two third insulating tubes may be arranged within the member.

[0014] A stage according to one embodiment of the present invention includes a shaft and the sheath heater, and the end of the metal sheath is housed within the shaft. Effects of the invention

[0015] A sheath heater according to one embodiment of the present invention has a structure in which the terminal portion can withstand high temperatures. Therefore, the heat resistance of the sheath heater is improved. In addition, since a stage according to one embodiment of the present invention includes a sheath heater with improved heat resistance, the operating temperature range of the stage is widened. Brief explanation of the drawing

[0016] FIG. 1 is a schematic plan view showing the external configuration of a heater of a sheath heater according to one embodiment of the present invention. FIG. 2 is a schematic cross-sectional view showing the internal configuration of a sheath heater according to one embodiment of the present invention. FIG. 3A is a schematic cross-sectional view showing the configuration of a sheath heater according to one embodiment of the present invention. FIG. 3B is a schematic cross-sectional view showing the configuration of a sheath heater according to one embodiment of the present invention. FIG. 3C is a schematic cross-sectional view showing the configuration of a sheath heater according to one embodiment of the present invention. FIG. 4 is a schematic perspective view showing the external configuration of a stage according to one embodiment of the present invention. FIG. 5 is a schematic top view showing the arrangement configuration of a sheath heater included in a stage according to one embodiment of the present invention. FIG. 6 is a schematic cross-sectional view showing the internal configuration of a stage according to one embodiment of the present invention. FIG. 7 is a schematic cross-sectional view showing the internal configuration of a stage according to one embodiment of the present invention. FIG. 8 is a schematic cross-sectional view showing the internal configuration of a stage according to one embodiment of the present invention. FIG. 9 is a schematic top view showing the arrangement configuration of a sheath heater included in a stage according to one embodiment of the present invention. FIG. 10 is a schematic cross-sectional view showing the configuration of an etching device according to one embodiment of the present invention. FIG. 11 is a schematic cross-sectional view showing the configuration of a CVD device according to one embodiment of the present invention. FIG. 12 is a schematic cross-sectional view showing the configuration of a sputtering device according to one embodiment of the present invention. FIG. 13 is a schematic cross-sectional view showing the configuration of a deposition apparatus according to one embodiment of the present invention. Specific details for implementing the invention

[0017] Hereinafter, each embodiment of the invention disclosed in this application will be described with reference to the drawings. However, the present invention may be implemented in various forms without departing from the gist thereof, and is not to be interpreted as being limited to the description of the embodiments exemplified below.

[0018] In order to clarify the explanation, drawings may schematically represent the width, thickness, shape, etc. of each part in comparison with the actual embodiment; however, this is merely an example and does not limit the interpretation of the present invention. Furthermore, in this specification and each drawing, components having the same function as described in the previously published drawings are given the same reference numerals, and redundant descriptions may be omitted. Additionally, for convenience of explanation, the terms "upward" or "downward" are used in descriptions, where "upward" or "downward" respectively indicate the direction when using the stage (when placing the substrate).

[0019] In the present specification and drawings, when all of the same or similar configurations are indicated, the same reference numeral is used, and when each of these configurations is distinguished, an uppercase alphabet is added. When distinguishing multiple parts of a single configuration, the same reference numeral is used, and additionally, a hyphen and a natural number are used.

[0020] <First Embodiment>

[0021] Referring to FIGS. 1 to 3C, a sheath heater (10) according to one embodiment of the present invention will be described.

[0022] FIG. 1 is a schematic plan view showing the external configuration of a sheath heater (10) according to an embodiment of the present invention. FIG. 2 is a schematic cross-sectional view showing the internal configuration of a sheath heater (10) according to an embodiment of the present invention. Specifically, FIG. 2 is a cross-sectional view corresponding to the plan view of FIG. 1. FIG. 3A to FIG. 3C are schematic cross-sectional views showing the configuration of a sheath heater (10) according to an embodiment of the present invention. Specifically, FIG. 3A is a cross-sectional view of a sheath heater (10) cut along the line A1-A2 shown in FIG. 2, FIG. 3B is a cross-sectional view of a sheath heater (10) cut along the line B1-B2 shown in FIG. 2, and FIG. 3C is a cross-sectional view of a sheath heater (10) cut along the line C1-C2 shown in FIG. 2.

[0023] The sheath heater (10) includes a heater section (100) and a terminal section (200). The heater section (100) includes a metal sheath (110), a heater wire (120), an insulating material (130), a first insulating tube (140), and a sealing material (150). The terminal section (200) includes a normal member (210), a cover-shaped member (220), a locking member (230), a lead wire (240), a connection terminal (250), a crimping sleeve (260), a second insulating tube (270), and a third insulating tube (280). Meanwhile, some components of the heater section (100) are embedded within the terminal section (200), so they may be described as the terminal section (200) below.

[0024] In the heater section (100), the heater wire (120) is disposed within the metal sheath (110). The insulating material (130) is filled within the metal sheath (110) so that the metal sheath (110) and the heater wire (120) are separated. That is, the heater wire (120) is embedded within the insulating material (130) and is electrically insulated from the metal sheath (110).

[0025] The first end (111-1) of the metal sheath (110) is open, and the second end (111-2) of the metal sheath (110) is closed. A first insulating tube (140) is disposed in the first end (111-1) of the metal sheath (110). A sealing material (150) is filled in the gap between the metal sheath (110) and the first insulating tube (140), and the first insulating tube (140) is fixed to the first end (111-1) of the metal sheath (110).

[0026] The cross-sectional shape of the first insulating tube (140) is circular, but is not limited thereto. The outer diameter of the first insulating tube (140) is smaller than the inner diameter of the metal sheath (110), and it is preferable that a part of the first insulating tube (140) is inserted and installed within the metal sheath (110). The first insulating tube (140) includes two first through holes (141). Within the metal sheath (110), the heater wire (120) is folded, and both ends of the heater wire (120) extend outward from the first end (111-1) of the metal sheath (110). In other words, at the first end (111-1) of the metal sheath (110), each of the two heater wires (120) corresponding to both ends is inserted and passed through the first through holes (141).

[0027] The outer diameter of the metal sheath (110) is small and flexible. Because of this, the heater part (100) can be bent. Also, since the heater wire (120) is protected by the metal sheath (110) and the insulating material (130), the heater part (100) has excellent impact resistance and corrosion resistance.

[0028] The thermal conductivity of the metal sheath (110) is preferably 10 W / mK or higher and 430 W / mK or lower. As a material for the metal sheath (110), metals such as aluminum, titanium, nickel, iron, chromium, niobium, copper, or molybdenum, or alloys thereof, may be used.

[0029] The heater wire (120) includes a heating wire and a non-heating wire. The heating wire generates heat when power is supplied. Meanwhile, the non-heating wire has a higher thermal conductivity than the heating wire and the generation of heat is suppressed. Therefore, when power is supplied to the heater wire (120), heat is mainly generated in the heating wire. The junction of the heating wire and the non-heating wire is located within the metal sheath (110), and the non-heating wire of the heater wire (120) extends outward from the first end (111-1) of the metal sheath (110). As a material for the heating wire, for example, metals such as nickel, chromium, iron, molybdenum, tungsten, or aluminum, carbon, alloys thereof, or oxides thereof may be used. As a material for the non-heating wire, for example, metals such as aluminum, copper, nickel, or iron, or alloys thereof may be used.

[0030] The insulating material (130) is filled into the metal sheath (110) in the form of powder or fine particles. Alternatively, the insulating material (130) may be filled into the metal sheath (110) in the form of a sintered body, a pre-sintered body, or a compacted body of powder or fine particles. The thermal conductivity of the insulating material (130) is preferably 10 W / mK or more and 300 W / mK or less. As a material for the insulating material (130), for example, magnesium oxide, aluminum oxide, silicon oxide, zirconium oxide, tantalum oxide, boron nitride, aluminum nitride, silicon nitride, zirconium nitride, titanium nitride, tantalum nitride, molybdenum nitride, niobium nitride, boron carbide, aluminum carbide, silicon carbide, zirconium carbide, titanium carbide, tantalum carbide, molybdenum carbide, or niobium carbide can be used.

[0031] As a material for the first insulating tube (140), for example, magnesium oxide, aluminum oxide, aluminum nitride, silicon oxide, zirconium oxide, tantalum oxide, boron nitride, aluminum nitride, silicon nitride, zirconium nitride, titanium nitride, tantalum nitride, molybdenum nitride, niobium nitride, boron carbide, aluminum carbide, silicon carbide, zirconium carbide, titanium carbide, tantalum carbide, molybdenum carbide, or niobium carbide can be used.

[0032] As a sealing material (150), for example, a ceramic sealing material containing a ceramic binder is used. The ceramic sealing material has superior heat resistance compared to the epoxy sealing material. As a material for the ceramic binder, for example, magnesium oxide, aluminum oxide, aluminum nitride, silicon oxide, zirconium oxide, tantalum oxide, boron nitride, aluminum nitride, silicon nitride, zirconium nitride, titanium nitride, tantalum nitride, molybdenum nitride, niobium nitride, boron carbide, aluminum carbide, silicon carbide, zirconium carbide, titanium carbide, tantalum nitride, molybdenum carbide, or niobium carbide can be used.

[0033] In the terminal portion (200), the ordinary member (210) includes a first body (211-1) and a second body (211-2), and has a structure in which the first body (211-1) and the second body (211-2) are connected. The inner diameter (or outer diameter) of the first body (211-1) is larger than the inner diameter (or outer diameter) of the second body (211-2). That is, the ordinary member (210) has a configuration in which the first body (211-1) and the second body (211-2) are connected in a stepped manner. However, the configuration of the ordinary member (210) is not limited thereto. The ordinary member (210) may have a configuration in which the first body (211-1) and the second body (211-2) are connected in a tapered manner.

[0034] The inner diameter of the second body (211-2) is approximately the same as the outer diameter of the metal sheath (110), and the first end (111-1) of the metal sheath (110) is inserted through the second body (211-2) of the ordinary member (210). In other words, the second body (211-2) of the ordinary member (210) covers the first end (111-1) of the metal sheath (110). The opening of the ordinary member (210) (the opening on the side of the first body (211-1)) is covered by a cover member (220). A flange portion (212) is installed on the outer surface of the first body (211-1), and the cover member (220) is held by the end of the first body (211-1) and the flange portion (212).

[0035] The first end (111-1) of the metal sheath (110) inserted and passed through the second body (211-2) of the ordinary member (210) is joined to the second body (211-2) of the ordinary member (210) by welding or soldering, etc. Additionally, the cover member (220) is joined to the flange portion (212) by welding, screw fastening, or soldering, etc. As solder for soldering, for example, an alloy containing silver, copper, and zinc, an alloy containing copper and zinc, an alloy containing aluminum containing a trace amount of phosphorus, an alloy containing titanium, copper, and nickel, an alloy containing titanium, zirconium, and copper, or an alloy containing titanium, zirconium, copper, and nickel, etc. may be used.

[0036] The cover member (220) includes an opening (221). The diameter of the opening (221) of the cover member (220) is smaller than the diameter of the opening of the first body (211-1) of the normal member (210). Two lead wires (240) are inserted and passed through the opening (221) of the cover member (220). That is, one end of the lead wire (240) is located inside the normal member (210), and the other end of the lead wire (240) is located outside the normal member (210). A connection terminal (250) is connected to the other end of the lead wire (240). The connection terminal (250) is connected to a power source that supplies power to the sheath heater (10).

[0037] A catch member (230) is mounted on a lead wire (240) that extends to the outside of a normal member (210) through an opening of a cover member (220). The catch member (230) clamps the lead wire (240) and is fixed to the lead wire (240). The catch member (230) may be in contact with the cover member (220), but the catch member (230) and the cover member (220) are not joined. The catch member (230) is, for example, a set color, but is not limited thereto.

[0038] In the ordinary member (210), the heater wire (120) is connected to the lead wire (240). Specifically, one end of the lead wire (240) is connected to each of the two ends of the heater wire (120) through a crimping sleeve (260). Accordingly, in the ordinary member (210), there are two crimping sleeves (260) corresponding to two lead wires (240).

[0039] The heater wire (120) may expand or contract due to heat generation, etc. In this case, if the lead wire (240) connected to the heater wire (120) is fixed, the elasticity of the heater wire (120) is lost, and there is a risk that the heater wire (120) will be disconnected. Therefore, in the sheath heater (10), as described above, the locking member (230) fixed to the lead wire (240) is not joined to the cover member (220) and has a configuration that moves in accordance with the expansion or contraction of the heater wire (120).

[0040] In the ordinary member (210), a second insulating tube (270) and two third insulating tubes (280) are disposed. As shown in FIGS. 3B and 3C, the cross-sectional shape of the second insulating tube (270) is approximately elliptical with a straight section, but is not limited thereto. The maximum outer diameter of the second insulating tube (270) is approximately equal to the inner diameter of the first body (211-1) of the ordinary member (210). The second insulating tube (270) includes two second through holes (271). Each of the two compression sleeves (260) is disposed within the second through holes (271). Accordingly, the two compression sleeves (260) are electrically insulated by a partition between the two second through holes (271) of the second insulating tube (270). The third insulating tube (280) is positioned between the first insulating tube (140) and the second insulating tube (270). The cross-sectional shape of the third insulating tube (280) is circular, but is not limited thereto. The third insulating tube (280) includes at least one third through hole (281). A heater wire (120) extending from the first through hole (141) of the first insulating tube (140) is inserted and passed through the third through hole (281). Two heater wires (120) extend within the normal member (210). In order to prevent short circuits between the two heater wires (120) extending between the first insulating tube (140) and the second insulating tube (270), each of the two heater wires (120) within the normal member (210) is covered by the third insulating tube (280).

[0041] The outer diameter of the third insulating tube (280) is smaller than the diameter of the second through hole (271) of the second insulating tube (270). At least a portion of the third insulating tube (280) may be dug into the second through hole (271) of the second insulating tube (270).

[0042] As the respective materials for the ordinary member (210) and the cover member (220), the same material as the metal sheath (110) may be used. Additionally, as the respective materials for the ordinary member (210) and the cover member (220), stainless steel, etc. may be used.

[0043] As the material for each of the second insulating tube (270) and the third insulating tube (280), the same material as the first insulating tube (140) can be used.

[0044] As explained above, the sheath heater (10) does not contain components with a low heat resistance temperature, such as epoxy adhesive. Therefore, the heat resistance of the sheath heater (10) is improved.

[0045] The sheath heater (10) is a so-called single-terminal sheath heater. However, the configuration of the sheath heater (10) can be applied to a double-terminal sheath heater and produce the same effect.

[0046] <Second Embodiment>

[0047] Referring to FIGS. 4 to 6, a stage (20) according to an embodiment of the present invention will be described. The stage (20) includes a sheath heater (10). Therefore, in the following description, the description of a configuration identical or similar to the configuration described in the first embodiment may be omitted.

[0048] FIG. 4 is a schematic perspective view showing the external configuration of a stage (20) according to one embodiment of the present invention.

[0049] As shown in FIG. 4, the stage (20) includes a first support plate (310), a second support plate (320), and a shaft (330). The first support plate (310) and the second support plate (320) overlap, and the second support plate (320) is installed below the first support plate (310). The second support plate (320) is joined to the first support plate (310) by welding, screw fastening, or soldering, etc. The shaft (330) is installed below the second support plate (320) to support the first support plate (310) and the second support plate (320). The shaft (330) is joined to the second support plate (320) by welding, screw fastening, or soldering, etc.

[0050] A semiconductor substrate including silicon or a compound semiconductor, or an insulating substrate including quartz or glass, is placed on the first support plate (310). Accordingly, the upper surface of the first support plate (310) has a flat surface. As a material for the first support plate (310), for example, a metal having a thermal conductivity of 200 W / mK or more and 430 W / mK or less may be used. By including a metal with high thermal conductivity in the first support plate (310), the thermal energy emitted by the sheath heater (10) can be efficiently conducted to the first support plate (310). In addition, the metal included in the first support plate (310) is 5 × 10 -6 / K or more 25 × 10 -6 It is desirable to have a thermal expansion coefficient of / K or less. Specifically, titanium, aluminum, or stainless steel can be used as the metal of the first support plate (310).

[0051] Although not shown, the first support plate (310) may have an electrostatic chuck for fixing the substrate, a through hole for supplying a gas with high thermal conductivity such as helium between the substrate and the stage (20), or a recirculation channel for recirculating a liquid medium.

[0052] As the material for the second support plate (320), the same metal as the first support plate (310) may be used. The metal included in the second support plate (320) may be the same as or different from the metal included in the first support plate (310). If the metal included in the first support plate (310) and the metal included in the second support plate (320) are different, the difference in thermal expansion coefficients is 10 × 10 -6 It is desirable that each metal be selected such that it is less than or equal to / K. By doing so, the deformation of the stage (20) due to the difference in thermal expansion is suppressed, thereby improving the reliability of the stage (20).

[0053] Although not illustrated, a third support plate may be installed below the second support plate (320) on the stage (20). The third support plate has the same configuration as the first support plate (310) or the second support plate (320). The third support plate may also be joined to the second support plate (320) using welding, screw fastening, or soldering.

[0054] The shaft (330) has a hollow structure to house the lead wire (240) of the sheath heater (10). In addition, when an electrostatic chuck is installed, the wiring connected to the electrostatic chuck is also housed within the shaft (330).

[0055] Although not illustrated, the shaft (330) may be connected to a rotating mechanism. By connecting the shaft (330) to the rotating mechanism, the stage (20) can be rotated around the major axis of the shaft (330).

[0056] FIG. 5 is a schematic top view showing the arrangement configuration of a sheath heater (10) included in a stage (20) according to an embodiment of the present invention. In FIG. 5, for convenience of explanation, the first support plate (310) is omitted from the illustration. Also, the shaft (330) is shown as a dotted line. FIG. 6 is a schematic cross-sectional view showing the internal configuration of a stage (20) according to an embodiment of the present invention. Specifically, FIG. 6 is a cross-sectional view of the stage (20) cut along the line D1-D2 shown in FIG. 5.

[0057] As shown in FIG. 5, the stage (20) includes a first sheath heater (10-1) and a second sheath heater (10-2). The first sheath heater (10-1) and the second sheath heater (10-2) are disposed on a second support plate (320). Meanwhile, in the following description, if the first sheath heater (10-1) and the second sheath heater (10-2) are not specifically distinguished, they will be described as a sheath heater (10).

[0058] As shown in FIG. 6, a groove (321) is formed on the upper surface of the second support plate (320). The depth of the groove (321) is approximately equal to the outer diameter of the sheath heater (10). Specifically, the depth of the groove (321) is greater than 100% and less than or equal to 150% of the outer diameter of the sheath heater (10), preferably greater than 100% and less than or equal to 120%, and particularly preferably greater than 100% and less than or equal to 110%. The first sheath heater (10-1) and the second sheath heater (10-2) are arranged to be embedded in the groove (321).

[0059] In the second support plate (320), two through holes (322) are formed in an area overlapping with the shaft (330). In each of the first sheath heater (10-1) and the second sheath heater (10-2) disposed on the second support plate (320), the heater portion (100) is bent and inserted through the through hole (322), and the terminal portion (200) is housed within the shaft (330).

[0060] The connection terminal (250) of the terminal section (200) is connected to a heater power source (not shown). When power is supplied to the heater section (100) from the heater power source through the lead wire (240), the heater section (100) generates heat, and the first support plate (310) and the second support plate (320) are heated.

[0061] As described above, the stage (20) includes a sheath heater (10) with improved heat resistance. Therefore, even when the stage (20) has a configuration in which the first end (111-1) of the sealed metal sheath (110) is housed within the shaft (330), the stage (20) can be used at high temperatures. That is, by including the sheath heater (10) in the stage (20), the operating temperature range of the stage (20) can be expanded. In addition, since the first sheath heater (10-1) and the second sheath heater (10-2) can be controlled independently, the temperature of the substrate placed on the stage (20) can be controlled uniformly and precisely.

[0062] <Variation Example 1>

[0063] Referring to FIG. 7, a stage (20A), which is a modified example of stage (20), will be described. Below, when the configuration of stage (20A) is identical to the configuration of stage (20), the description of the configuration of stage (20A) may be omitted.

[0064] FIG. 7 is a schematic cross-sectional view showing the internal configuration of a stage (20A) according to one embodiment of the present invention. Specifically, FIG. 7 is a cross-sectional view of the stage (20A) cut along the line D1-D2 shown in FIG. 5.

[0065] As shown in FIG. 7, a groove (311) is formed on the lower surface of the first support plate (310). The depth of the groove (311) is approximately equal to the outer diameter of the sheath heater (10). Specifically, the depth of the groove (311) is greater than 100% and less than or equal to 150% of the outer diameter of the sheath heater (10), preferably greater than 100% and less than or equal to 120%, and particularly preferably greater than 100% and less than or equal to 110%. The first sheath heater (10-1) and the second sheath heater (10-2) are arranged to be embedded in the groove (311).

[0066] The end of the groove (311) is installed within an area that overlaps with the shaft (330) of the first support plate (310). The end of the groove (311) is in communication with the through hole (322) of the second support plate (320). Accordingly, in each of the first sheath heater (10-1) and the second sheath heater (10-2) disposed on the first support plate (310), the heater portion (100) is bent and inserted through the through hole (322), and the terminal portion (200) is housed within the shaft (330).

[0067] As described above, the stage (20A) also includes a sheath heater (10) with improved heat resistance. Therefore, the operating temperature range of the stage (20A) can be expanded. In addition, since the first sheath heater (10-1) and the second sheath heater (10-2) can be controlled independently, the temperature of the substrate placed on the stage (20A) can be controlled uniformly and precisely.

[0068] <Variation Example 2>

[0069] Referring to FIG. 8, a different variant of stage (20), stage (20B), will be described. Below, when the configuration of stage (20B) is identical to the configuration of stage (20), the description of the configuration of stage (20B) may be omitted.

[0070] FIG. 8 is a schematic cross-sectional view showing the internal configuration of a stage (20B) according to one embodiment of the present invention. Specifically, FIG. 8 is a cross-sectional view of the stage (20B) cut along the line D1-D2 shown in FIG. 5.

[0071] As shown in FIG. 8, a groove (311B) is formed on the lower surface of the first support plate (310). Additionally, a groove (321B) is formed on the upper surface of the second support plate (320). The position of the groove (311B) corresponds to the position of the groove (321B). The depth of the groove (311B) may be the same as or different from the depth of the groove (321B). However, the sum of the depth of the groove (311B) and the depth of the groove (321B) is approximately the same as the outer diameter of the sheath heater (10). Specifically, the sum of the depth of the groove (311B) and the depth of the groove (321B) is greater than 100% and less than or equal to 150% of the outer diameter of the sheath heater (10), preferably greater than 100% and less than or equal to 120%, and particularly preferably greater than 100% and less than or equal to 110%. The first sheath heater (10-1) and the second sheath heater (10-2) are positioned to be embedded in the groove (311B) and the groove (321B).

[0072] A through hole (322) is formed in the area overlapping with the shaft (330) of the second support plate (320). In each of the first sheath heater (10-1) and the second sheath heater (10-2) disposed between the first support plate (310) and the second support plate (320), the heater portion (100) is bent and inserted through the through hole (322), and the terminal portion (200) is housed within the shaft (330).

[0073] As described above, the stage (20B) also includes a sheath heater (10) with improved heat resistance. Therefore, the operating temperature range of the stage (20B) can be expanded. In addition, since the first sheath heater (10-1) and the second sheath heater (10-2) can be controlled independently, the temperature of the substrate placed on the stage (20B) can be controlled uniformly and precisely.

[0074] <Variation Example 3>

[0075] Referring to FIG. 9, another variation of stage (20), stage (20C), will be described. Below, when the configuration of stage (20C) is identical to the configuration of stage (20), the description of the configuration of stage (20C) may be omitted.

[0076] FIG. 9 is a schematic top view showing the arrangement configuration of a sheath heater included in a stage (20C) according to one embodiment of the present invention. In FIG. 9, for convenience of explanation, the first support plate (310) is omitted from the illustration.

[0077] As shown in FIG. 9, the stage (20C) includes a first sheath heater (10-1), a second sheath heater (10-2), a third sheath heater (10-3), and a fourth sheath heater (10-4). The first sheath heater (10-1) to the fourth sheath heater (10-4) are disposed on a second support plate (320).

[0078] In the stage (20C), the second support plate (320) is divided into four sections, and four independent sheath heaters (10) are arranged in each of the four sections. In each of the four sections, the sheath heaters (10) are arranged in a zigzag pattern to form an arc. The first sheath heater (10-1) to the fourth sheath heater (10-4) have the same arrangement shape. Additionally, if one of the first sheath heater (10-1) to the fourth sheath heater (10-4) is rotated 90 degrees along an axis passing through the center of the second support plate (320), it is arranged to overlap with the other one.

[0079] As described above, the stage (20C) also includes a sheath heater (10) with improved heat resistance. Therefore, the operating temperature range of the stage (20C) can be expanded. In addition, since the first sheath heater (10-1) to the fourth sheath heater (10-4) can be controlled independently, the temperature of the substrate placed on the stage (20B) can be controlled uniformly and precisely in each section.

[0080] <Third Embodiment>

[0081] Referring to FIG. 10, an etching apparatus (50) according to one embodiment of the present invention will be described. The etching apparatus (50) includes a stage (20). Therefore, below, descriptions of configurations identical or similar to those described in the second embodiment may be omitted.

[0082] FIG. 10 is a schematic cross-sectional view showing the configuration of an etching device (50) according to one embodiment of the present invention.

[0083] The etching device (50) can perform dry etching on various films. The etching device (50) has a chamber (502). The chamber (502) provides a space for performing etching on a film such as a conductor, an insulator, or a semiconductor formed on a substrate.

[0084] An exhaust device (504) is connected to the chamber (502), thereby allowing the inside of the chamber (502) to be set to a reduced pressure atmosphere. An inlet pipe (506) for introducing additional reaction gas is installed in the chamber (502), and a reaction gas for etching is introduced into the chamber (502) through a valve (508). Examples of reaction gases include tetrafluorocarbon (CF4), octafluorocyclobutane (c-C4F8), and decafluorocyclopentane (c-C5F8). 10 Fluorine-containing organic compounds such as ), or hexafluorobutadiene (C4F6) can be used.

[0085] A microwave source (512) can be installed in the upper part of the chamber (502) through a waveguide (510). The microwave source (512) has an antenna or the like for supplying microwaves and outputs high-frequency microwaves, such as microwaves of 2.45 GHz or radio waves (RF) of 13.56 MHz. Microwaves generated from the microwave source (512) are propagated to the upper part of the chamber (502) by the waveguide (510) and introduced into the chamber (502) through a window (514) containing quartz or ceramic, etc. The reaction gas is plasmafied by the microwaves, and etching of the film proceeds by electrons, ions, or radicals contained in the plasma.

[0086] A stage (20) for placing a substrate is installed at the bottom of the chamber (502). A power supply (524) is connected to the stage (20) to apply high-frequency power to the stage (20), and an electric field formed by microwaves is formed in a direction perpendicular to the surface of the stage (20) and the surface of the substrate. Magnets (516), magnets (518), and magnets (520) may additionally be installed on the top and sides of the chamber (502). The magnets (516), magnets (518), and magnets (520) may be permanent magnets or electromagnets having an electromagnetic coil. A magnetic field parallel to the surface of the stage (20) and the substrate is generated by the magnets (516), magnets (518), and magnets (520). Due to the coupling of the magnetic field and the electric field produced by microwaves, electrons in the plasma receive a Lorentz force, resonate, and are bound to the surface of the stage (20) and the substrate. As a result, a high-density plasma can be generated on the surface of the substrate.

[0087] Additionally, a heater power supply (530) for controlling a sheath heater (10) installed on the stage (20) is connected to the stage (20). Additionally, as an optional configuration, a power supply (526) for an electrostatic chuck for fixing a substrate to the stage (20), a temperature controller (528) for controlling the temperature of a medium circulating inside the stage (20), and a rotation control device (not shown) for rotating the stage (20) may be connected to the stage (20).

[0088] <Fourth Embodiment>

[0089] Referring to FIG. 11, a CVD apparatus (60) according to one embodiment of the present invention will be described. The CVD apparatus (60) includes a stage (20). Therefore, in the following description, the description of a configuration identical or similar to the configuration described in the second embodiment may be omitted.

[0090] FIG. 11 is a schematic cross-sectional view showing the configuration of a CVD device (60) according to one embodiment of the present invention.

[0091] The CVD device (60) has a chamber (602). The CVD device (60) provides a device for chemically reacting a reaction gas to chemically form various films on a substrate.

[0092] An exhaust device (604) is connected to the chamber (602) to reduce the pressure inside the chamber (602). An inlet pipe (606) for introducing additional reaction gas is installed in the chamber (602), and a reaction gas for forming a film is introduced into the chamber (602) through a valve (608). Various gases may be used as reaction gases depending on the film being produced. The gas may be liquid at room temperature. For example, a thin film of silicon, silicon oxide, or silicon nitride can be formed by using silane, dichlorosilane, or tetraethoxysilane. In addition, a thin film of metal such as tungsten or aluminum can be formed by using tungsten fluoride or trimethylaluminum.

[0093] Similar to the etching device (50), a microwave source (612) may be installed in the upper part of the chamber (602) through a waveguide (610). Microwaves generated from the microwave source (612) are introduced into the chamber (602) by the waveguide (610). The reaction gas is plasmafied by the microwaves, and the chemical reaction of the gas is promoted by various active species contained in the plasma, and the product obtained by the chemical reaction is deposited on the substrate to form a thin film. As an optional configuration, a magnet (644) to increase the density of the plasma may be installed in the chamber (602). A stage (20) is installed in the lower part of the chamber (602), and the deposition of the thin film can be performed with the substrate placed on the stage (20). Similar to the etching device (50), additional magnets (616) and magnets (618) may be installed on the side of the chamber (602).

[0094] Additionally, a heater power supply (630) for controlling a sheath heater (10) installed on the stage (20) is connected to the stage (20). Additionally, as an optional configuration, a power supply (624) for supplying high-frequency power to the stage (20), a power supply (626) for an electrostatic chuck, a temperature controller (628) for controlling the temperature of a medium circulating inside the stage (20), and a rotation control device (not shown) for rotating the stage (20) may be connected to the stage (20).

[0095] <Fifth Embodiment>

[0096] Referring to FIG. 12, a sputtering apparatus (70) according to one embodiment of the present invention will be described. The sputtering apparatus (70) includes a stage (20). Therefore, in the following description, the description of a configuration identical or similar to the configuration described in the second embodiment may be omitted.

[0097] FIG. 12 is a schematic cross-sectional view showing the configuration of a sputtering device (70) according to one embodiment of the present invention.

[0098] The sputtering device (70) has a chamber (702). The sputtering device (70) provides a field for colliding high-speed ions with a target and depositing the target atoms generated at that time onto a substrate.

[0099] An exhaust device (704) for reducing pressure inside the chamber (702) is connected to the chamber (702). An inlet pipe (706) and a valve (708) are installed in the chamber (702) to introduce a sputtering gas, such as argon, into the chamber (702).

[0100] At the bottom of the chamber (702), a target stage (710) is installed to hold a target containing a film-forming material and also to function as a cathode, and a target (712) is installed thereon. A high-frequency power supply (714) is connected to the target stage (710), and plasma can be generated within the chamber (702) by the high-frequency power supply (714).

[0101] A stage (20) may be installed on the upper part of the chamber (702). In this case, the formation of a thin film proceeds with the substrate installed below the stage (20). Similar to the etching device (50) or the CVD device (60), a heater power supply (730) is connected to the stage (20). Additionally, a power supply (724) for supplying high-frequency power to the stage (20), a power supply (726) for an electrostatic chuck, a temperature controller (728), and a rotation control device (not shown) for rotating the stage (20) may be connected to the stage (20).

[0102] Argon ions accelerated by plasma generated in the chamber (702) collide with the target (712), and atoms of the target (712) are ejected. The ejected atoms fly onto a substrate installed below the stage (20) while the shutter (716) is open and are deposited.

[0103] In this embodiment, a configuration in which the stage (20) is installed on the upper part of the chamber (702) and the target stage (710) is installed on the lower part of the chamber (702) is exemplified, but this embodiment is not limited to this configuration, and the sputtering device (70) may be configured such that the target (712) is positioned on the stage (20). Alternatively, the stage (20) may be installed so that the main surface of the substrate is positioned perpendicular to the horizontal plane, and the target stage (710) may be installed opposite to it.

[0104] <6th Embodiment>

[0105] Referring to FIG. 13, a deposition apparatus (80) according to one embodiment of the present invention will be described. The deposition apparatus (80) includes a stage (20). Therefore, in the following description, the description of a configuration identical or similar to the configuration described in the second embodiment may be omitted.

[0106] FIG. 13 is a schematic cross-sectional view showing the configuration of a deposition apparatus (80) according to one embodiment of the present invention.

[0107] The deposition apparatus (80) has a chamber (802). The deposition apparatus (80) is provided with a space for evaporating a material in a deposition source (810) and depositing the evaporated material onto a substrate.

[0108] An exhaust device (504) for creating a high vacuum inside the chamber (802) is connected to the chamber (802). An inlet pipe (806) for returning the chamber (802) to atmospheric pressure is installed in the chamber (802), and an inert gas such as nitrogen or argon is introduced into the chamber (802) through a valve (808).

[0109] A stage (20) may be installed on the upper part of the chamber (802). With the substrate installed below the stage (20), the deposition of material proceeds. Similar to the etching device (50), CVD device (60), and sputtering device (70), a heater power supply (828) is additionally connected to the stage (20). Additionally, as an optional configuration, a power supply (824) for an electrostatic chuck, a temperature controller (826), and a rotation control device (830) for rotating the stage (20) may be connected to the stage (20). The stage (20) may additionally have a mask holder (816) for fixing a metal mask between the substrate and the deposition source (810). By doing so, a metal mask can be placed near the substrate so that the opening of the metal mask overlaps the area where the material is deposited.

[0110] A deposition source (810) is installed at the lower side of the chamber, and the deposition source (810) is filled with the deposition source (810). A heater for heating the material is installed in the deposition source (810), and the heater is controlled by a control device (812). Deposition is initiated by creating a high vacuum inside the chamber (802) using an exhaust device (804) and heating the deposition source (810) to vaporize the material. When the deposition rate becomes constant, the shutter (814) is opened, thereby initiating the deposition of the material on the substrate.

[0111] In the etching apparatus (50), CVD apparatus (60), sputtering apparatus (70), and deposition apparatus (80) described in the above third to sixth embodiments, a stage (20) is used. By using the stage (20), the substrate can be heated uniformly and the heating temperature can be precisely controlled. Therefore, by using the etching apparatus (50), CVD apparatus (60), sputtering apparatus (70), or deposition apparatus (80), it becomes possible to uniformly form various films with controlled characteristics on the substrate. In addition, in the stage (20), since the first end (111-1) of the metal sheath (110) is housed within the shaft (330), the degree of freedom of the position in which the stage (20) is placed is improved.

[0112] Each of the embodiments described above as embodiments of the present invention may be implemented by appropriately combining them, provided that they are not contradictory to one another. Furthermore, additions, deletions, or design changes made by a person skilled in the art based on each embodiment are also included within the scope of the present invention, provided that they possess the essence of the present invention.

[0113] Furthermore, even if there are other effects different from those caused by each of the embodiments described above, those that are obvious from the description in this specification or can be easily predicted by those skilled in the art are naturally understood to be caused by the present invention. Explanation of the symbols

[0114] 10: Sheath heater, 20, 20A, 20B, 20C: Stage, 50: Etching device, 60: CVD device, 70: Sputtering device, 80: Deposition device, 100: Heater section, 110: Metal sheath, 111: End section, 120: Heater wire, 130: Insulating material, 140: First insulating tube, 141: First through hole, 150: Encapsulating material, 200: Terminal section, 210: Conventional member, 211: Tube, 212: Flange section, 220: Cover-like member, 221: Opening, 230: Locking member, 240: Lead wire, 250: Connection terminal, 260: Crimping sleeve, 270: Second insulating tube, 271: Second through hole, 280: Third Insulating tube, 281: 3rd through hole, 310: 1st support plate, 311, 311B: groove, 320: 2nd support plate, 321, 321B: groove, 322: through hole, 330: shaft, 502: chamber, 504: exhaust device, 506: inlet tube, 508: valve, 510: waveguide, 512: microwave source, 514: window, 516: magnet, 518: magnet, 520: magnet, 524: power supply, 526: power supply, 528: temperature controller, 530: heater power supply, 602: chamber, 604: exhaust device, 606: inlet tube, 608: valve, 610: waveguide, 612: microwave source, 616: magnet, 618: magnet, 624: Power supply, 626: Power supply, 628: Temperature controller, 630: Heater power supply, 644: Magnet, 702: Chamber, 704: Exhaust device, 706: Inlet tube, 708: Valve, 710: Target stage, 712: Target, 714: High-frequency power supply, 716: Shutter, 724: Power supply, 726: Power supply, 728: Temperature controller, 730: Heater power supply, 802: Chamber, 804: Exhaust device, 806: Inlet tube, 808: Valve, 810: Deposition source, 812: Control device, 814: Shutter, 816: Mask holder, 824: Power supply, 826: Temperature controller, 828: Heater power supply, 830: Rotation control device

Claims

Claim 1 A sheath heater comprising: a metal sheath; a heater wire disposed within the metal sheath; an insulating material filled within the metal sheath to separate the metal sheath from the heater wire; a lead wire supplying power to the heater wire; a crimp sleeve connecting the heater wire and the lead wire extending from the end of the metal sheath; a conventional member covering the end of the metal sheath and on which the crimp sleeve is disposed; and a cover-like member that is fitted and joined to the conventional member without contacting an adhesive and includes an opening through which the lead wire is inserted and passed, wherein the end of the metal sheath comprises a first insulating tube including a first through hole through which the heater wire is inserted and passed, and a sealing material filling the gap between the metal sheath and the first insulating tube, wherein the sealing material comprises a ceramic binder. Claim 2 In claim 1, the sheath heater, wherein the first insulating tube comprises two first through holes. Claim 3 In claim 1, additionally, a second insulating tube disposed within the conventional member and including a second through hole, and the compression sleeve is disposed within the second through hole, a sheath heater. Claim 4 In paragraph 3, the second insulating tube is a sheath heater comprising two second through holes. Claim 5 In paragraph 3, additionally, a sheath heater comprising a locking member fixed to the lead wire, wherein the locking member is not joined to the cover member. Claim 6 In claim 5, the above-mentioned catch member is a sheath heater that is fixed to the lead wire by clamping the lead wire. Claim 7 In paragraph 3, additionally, a sheath heater comprising a third insulating tube disposed between the first insulating tube and the second insulating tube within the ordinary member and comprising a third through hole through which the heater wire is inserted. Claim 8 In claim 7, the outer diameter of the third insulating tube is smaller than the diameter of the second through hole, a sheath heater. Claim 9 In claim 7, at least a portion of the third insulating tube is embedded into the second through hole, a sheath heater. Claim 10 A sheath heater according to claim 7, wherein two of the third insulating tubes are disposed within the above-mentioned ordinary member. Claim 11 A stage comprising a shaft and a sheath heater described in any one of claims 1 to 10, wherein the end of the metal sheath is housed within the shaft.

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