Substrate processing apparatus

Abstract

The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus that performs heat treatment on a substrate. The present invention discloses a substrate processing device comprising: a process chamber (100) forming a processing space (S) in which a substrate (1) is processed; a substrate support member (200) installed in the processing space (S) to support the substrate (1); a gas injection member (300) communicating with the processing space (S) on one side of the process chamber (100) to inject process gas in a horizontal direction toward the upper side of the substrate (1); a gas exhaust member (400) communicating with the processing space (S) on the other side of the process chamber (100) to exhaust the process gas moving in a horizontal direction toward the upper side of the substrate (1); and a heater member (500) extending from one side of the process chamber (100) to the other side to heat the substrate (1), wherein the heater member (500) heats the substrate (1) to different heating temperatures along the longitudinal direction to compensate for the temperature deviation of the substrate (1) according to the process gas flow.

Description

Technology Field

[0001] The present invention relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus that performs heat treatment on a substrate. Background Technology

[0002] In order to discharge various by-products generated during the process to the outside of the substrate processing device equipped with a processing space where a substrate is processed, a large amount of process gas is injected into the processing space to discharge the by-products inside the processing space to the outside.

[0003] In particular, when performing substrate processing by supplying heat into a substrate processing device, a large amount of process gas is used to form an airflow inside the processing space to discharge various fumes to the outside in order to prevent the effects of various fumes generated during the process.

[0004] In addition, as a method of controlling the concentration of processing gas to form a substrate processing atmosphere within the substrate processing device, a large amount of process gas is supplied internally.

[0005] Meanwhile, due to the recent increase in substrate size and the resulting increase in the processing volume of substrate processing equipment, the amount of gas supplied to the processing space is on the rise for reasons of improved productivity and particle reduction.

[0006] In this case, due to the structure of the substrate processing device that supplies a large amount of process gas from one side and exhausts the supplied gas from the other side, there is a problem in that temperature variations occur at different substrate locations along the direction of the process gas airflow.

[0007] More specifically, there is a problem in that the temperature of the substrate side adjacent to the gas supply end is relatively lower than the temperature of the substrate side adjacent to the gas exhaust end because the temperature of the supplied process gas is relatively lower compared to the internal temperature of the substrate processing device.

[0008] Meanwhile, as the substrate processing device becomes larger and the amount of gas supplied increases, this problem intensifies, leading to a worsening of temperature imbalance within the substrate.

[0009] To improve these problems, multiple individually controllable heater units or heating wires were installed within the conventional substrate processing device, and an individual temperature control method was applied for each location and section.

[0010] However, in this case, the size of the heater section inevitably increases, and due to the structure of the substrate processing device that processes multiple substrates arranged vertically, the spacing between substrates increases and the number of substrates processed decreases, leading to a problem of reduced process efficiency.

[0011] In addition, as the size of the heater unit increases, the spacing between substrates increases in consideration of the vertical movement of the transfer robot transporting the substrates, leading to a problem where the device size increases rapidly.

[0012] Meanwhile, even if the size of the heater section increases, if the spacing between the substrates is maintained at the conventional spacing, there are problems such as reduced stability and a shortened maintenance cycle. The problem to be solved

[0013] The present invention was created to solve the above-mentioned problems and provides a substrate processing device capable of preventing temperature deviations from occurring at different substrate locations along the direction of the supplied gas flow. means of solving the problem

[0014] The present invention is created to achieve the above-described purpose of the present invention, and the present invention comprises: a process chamber (100) forming a processing space (S) in which a substrate (1) is processed; a substrate support member (200) installed in the processing space (S) to support the substrate (1); a gas injection member (300) communicating with the processing space (S) on one side of the process chamber (100) and spraying process gas in a horizontal direction on the upper side of the substrate (1); and a gas exhaust member (400) communicating with the processing space (S) on the other side of the process chamber (100) and exhausting the process gas moving horizontally on the upper side of the substrate (1). A substrate processing device is disclosed comprising a heater unit (500) that extends from one side of the process chamber (100) to the other side and heats the substrate (1), wherein the heater unit (500) heats the substrate (1) to different heating temperatures along the longitudinal direction to compensate for the temperature variation of the substrate (1) according to the process gas flow.

[0015] The heater unit (500) may include a heater tube (510) installed across one side of the process chamber (100) and a heater wire (530) inserted inside the heater tube (510) and wound in a coil shape to generate heat.

[0016] The heater unit (500) may include a first heating area (S1) adjacent to the gas injection unit (300) and a second heating area (S2) adjacent to the gas exhaust unit (400) and having a lower heating temperature than the first heating area (S1).

[0017] The heater wire (530) is a single wire, and the first pitch (P1), which is the winding pitch in the first heating region (S1), may be smaller than the second pitch (P2), which is the winding pitch in the second heating region (S2).

[0018] The heater wire (530) is a single wire, and the first diameter (D1), which is the winding diameter in the first heating region (S1), may be larger than the second diameter (D2), which is the winding diameter in the second heating region (S2).

[0019] The above heater wire (530) may have a first thickness (W1), which is the line width in the first heating region (S1), smaller than the second thickness (W2), which is the line width in the second heating region (S2).

[0020] The heating temperature of the heater unit (500) can be lowered as it moves from the gas injection unit (300) side to the gas exhaust unit (400) side.

[0021] The heater wire (530) is a single wire, and the winding diameter can gradually decrease from the gas injection part (300) side to the gas exhaust part (400) side.

[0022] The heater wire (530) is a single wire, and the winding pitch can gradually increase from the gas injection part (300) side to the gas exhaust part (400) side.

[0023] The heater unit (500) may include a third heating area (S3) that is formed closer to the gas injection unit (300) side than the first heating area (S1) with respect to the drop point of the process gas injected from the gas injection unit (300) on the substrate (1) side, and has a lower heating temperature than the first heating area (S1).

[0024] The third heating region (S3) may have a heating temperature equal to or higher than the heating temperature of the second heating region (S2).

[0025] The heater unit (500) includes a single heater wire (530) that generates heat upon application of external power, and can control different heating temperatures in the longitudinal direction through power control applied based on at least one of the temperature deviation of the substrate (1) and the process gas supply flow rate.

[0026] In addition, the present invention is a substrate processing device for performing substrate processing by arranging a plurality of substrates (1) spaced apart from each other in a vertical direction, comprising: a process chamber (100) forming a processing space (S) in which the substrates (1) are processed; a plurality of substrate support members (200) installed in a vertical direction in the processing space (S) to support each of the substrates (1); a plurality of gas injection members (300) each corresponding to the substrates (1) on one side of the process chamber (100) and each injecting process gas in a horizontal direction on the upper side of the substrates (1); and a plurality of gas exhaust members (400) each corresponding to the substrates (1) on the other side of the process chamber (100) and exhausting the process gas moving in a horizontal direction on the upper side of the substrates (1). A substrate processing device is disclosed, comprising a plurality of heater units installed vertically in the processing space (S) and extending from one side of the process chamber (100) to the other side to heat the substrates (1), wherein a heater unit (500) positioned at the lower side among the heater units heats the substrates (1) to different heating temperatures in the longitudinal direction to compensate for the temperature variation of the substrates (1) due to the process gas. Effects of the invention

[0027] The substrate processing device according to the present invention has the advantage of being able to control the heating temperature by region through the physical difference of a single heater part.

[0028] In particular, the substrate processing device according to the present invention has the advantage of enabling uniform temperature processing of the substrate by compensating for temperature deviations within the substrate caused by the inflow of process gas at a temperature relatively lower than the internal temperature of the processing space through different heating temperatures for each region.

[0029] In addition, the substrate processing device according to the present invention can perform uniform substrate processing by compensating for temperature variations occurring in the substrate through a heater part of the same size as conventional ones, and thus has the advantage of effectively improving temperature variations within the substrate while maintaining the size of the substrate processing device.

[0030] In addition, the substrate processing device according to the present invention has the advantage of effectively compensating for the difference in temperature variation within the substrate according to the process gas flow rate by adjusting the heating temperature of the heater part according to the process gas flow rate. Brief explanation of the drawing

[0031] FIG. 1 is a cross-sectional view showing the appearance of a substrate processing apparatus according to the present invention. FIG. 2 is a cross-sectional view showing the installation of a heater part of a substrate processing device according to FIG. 1 and a first embodiment. FIG. 3 is a cross-sectional view showing a second embodiment of the heater part of the substrate processing apparatus according to FIG. 1. FIG. 4 is a cross-sectional view showing a third embodiment of the heater part of the substrate processing apparatus according to FIG. 1. FIG. 5 is a cross-sectional view showing a fourth embodiment of the heater part of the substrate processing apparatus according to FIG. 1. FIG. 6 is a cross-sectional view showing the installation location of the heater part of the substrate processing device according to FIG. 1 and the fifth embodiment. Specific details for implementing the invention

[0032] The substrate processing apparatus according to the present invention will be described in detail below with reference to the attached drawings.

[0033] A substrate processing device according to the present invention comprises, as illustrated in FIG. 1, a process chamber (100) forming a processing space (S) in which a substrate (1) is processed; a substrate support member (200) installed in the processing space (S) to support the substrate (1); a gas injection member (300) communicating with the processing space (S) on one side of the process chamber (100) to spray process gas in a horizontal direction on the upper side of the substrate (1); a gas exhaust member (400) communicating with the processing space (S) on the other side of the process chamber (100) to exhaust the process gas moving in a horizontal direction on the upper side of the substrate (1); and a heater member (500) extending from one side of the process chamber (100) to the other side to heat the substrate (1).

[0034] Here, the process gas according to the present invention refers to a gas used in a process for substrate treatment, and more specifically, it may refer to a purge gas for discharging various fumes that may occur during the process and various by-products generated through the fumes.

[0035] The substrate (1) to be processed according to the present invention can be understood to include all substrates such as substrates used in display devices such as LEDs and LCDs, semiconductor substrates, and solar cell substrates, and in particular, may mean a flexible substrate used in a flexible display device.

[0036] Meanwhile, the substrate processing process of the substrate processing apparatus according to the present invention can be understood to include a deposition process, an etching process, a heat treatment process, etc., and in particular, it may include a series of processes such as forming a flexible substrate on a non-flexible substrate, forming a pattern on a flexible substrate, separating a flexible substrate, etc., and a process of heat-treating and drying the flexible substrate.

[0037] The above process chamber (100) is configured such that a gate (not shown) is formed at the front for introducing and discharging a substrate (1), and a processing space (S) is formed inside for processing the substrate (1), and various configurations are possible.

[0038] For example, the process chamber (100) may include a chamber body that forms the processing space (S) inside; and an insulating member provided at a certain distance from the inner surface of the chamber body.

[0039] In addition, the process chamber (100) may further include a reflector plate that is provided between the inner surface of the chamber body and the insulation part to increase the insulation effect.

[0040] In addition, the process chamber (100) may further include an opening / closing door for opening and closing a gate to introduce and discharge a substrate (1).

[0041] The above process chamber (100) is configured to form a processing space (S) inside and a gate formed at the front for introducing and discharging a substrate (1), and the substrate (1) can be brought in and out through the gate (not shown) by opening or closing.

[0042] Meanwhile, the process chamber (100) may be formed vertically for processing a plurality of substrates (1), and may have a rear side, one side and the other side, an upper side and a lower side based on the front side through which the substrate (1) is introduced and removed, having a cuboid.

[0043] A configuration for processing multiple substrates (1) arranged in a vertical direction will be described later.

[0044] The above substrate support member (200) is installed in a processing space (S) and is configured to support the substrate (1) such that a gap space (S2) is formed between the edge of the substrate (1) and the inner surface of the process chamber (100), and various configurations are possible.

[0045] At this time, the substrate support member (200) may include a support bar (210) installed to cross one side and the other side where the gas injection member (300) and the gas exhaust member (400), described later, are respectively installed, and a protruding support member (220) formed to protrude above the support bar (210) and contact support the bottom surface of the substrate (1).

[0046] That is, the substrate support member (200) is provided with a support bar (210) installed across one side and the other side of the chamber body (110), and a protruding support member (220) is provided on the upper surface of the support bar (210) at a position corresponding to the edge of the substrate (1) or at a position corresponding to a vertex so as to support the substrate (1).

[0047] Meanwhile, as another example, the substrate support member (200) may have two support bars (210) installed to cross one side and the other side respectively at positions adjacent to the front and rear of the chamber body (110), and a plurality of support members (not shown) installed between the two support bars (210), and a protruding support member (220) may be provided on the upper side of the support member (not shown).

[0048] The above gas injection unit (300) is connected to a processing space (S) on one side of the process chamber (100) and can inject process gas in a horizontal direction on the upper side of the substrate (1).

[0049] The above gas injection unit (300) is configured to be provided on one side of the process chamber (100) and to inject process gas toward the upper surface of the substrate (1), and various configurations are possible.

[0050] For example, the gas injection unit (300) can receive process gas from a gas supply pipe that is provided on the outer surface of the process chamber (100) and receives process gas from the outside, and can inject process gas in a horizontal direction toward the upper side of the substrate (1).

[0051] At this time, the gas injection unit (300) may spray process gas in a horizontal direction opposite to the gas exhaust unit (400) described later, and as another example, may spray process gas in an inclined direction toward the substrate (1).

[0052] The above gas injection unit (300) may be formed to protrude toward the inner surface of the process chamber (100) from a gas supply pipe that delivers process gas, and may penetrate the process chamber (100) and communicate with the processing space (S) to inject process gas.

[0053] The above gas exhaust unit (400) may be configured to be connected to the processing space (S) on the other side of the process chamber (100) and to exhaust the process gas moving horizontally on the upper side of the substrate (1).

[0054] That is, the gas exhaust unit (400) is installed to face the gas injection unit (300) and can induce a horizontal flow of the process gas injected from the gas injection unit (300) on the upper surface of the substrate (1) by sucking in the process gas.

[0055] For example, the above gas exhaust section (400) is provided on the outer surface of the process chamber (100) and is provided in a gas exhaust pipe that delivers the discharged process gas to the outside, and can inhale the process gas by penetrating the process chamber (100).

[0056] At this time, the gas exhaust section (400) may be formed to protrude toward the inner surface of the process chamber (100) from a gas exhaust pipe that delivers process gas exhausted from outside the process chamber (100) to the outside, and may be formed to penetrate the process chamber (100).

[0057] The heater unit (500) may be configured to extend from one side of the process chamber (100) to the other side to heat the substrate (1).

[0058] At this time, the heater unit (500) is installed extending from one side of the process chamber (100) to the other side, and more specifically, is provided below the substrate support unit (200) to heat the substrate (1) supported by the substrate support unit (200).

[0059] In addition, the heater unit (500) is provided in multiple units on the same horizontal plane to heat the entire surface area of ​​the substrate (1).

[0060] Meanwhile, the process gas sprayed horizontally from the gas injection unit (300) onto the upper side of the substrate (1) is sprayed at a relatively lower temperature compared to the temperature (or atmosphere temperature) of the processing space (S), so there is a problem that the temperature of the substrate (1) is relatively low due to the process gas moving along the upper surface of the substrate (1).

[0061] In addition, the substrate (1) on the gas exhaust side (400) is maintained at a relatively high temperature due to the process gas moving horizontally along the upper surface of the substrate (1), and accordingly, there is a problem in that a temperature difference occurs depending on the position of the substrate (1).

[0062] To improve these problems, the heater unit (500) heats the substrate (1) at different heating temperatures along the length direction to compensate for the temperature difference within the substrate (1) due to the process gas flow.

[0063] For example, the heater unit (500) may include a heater tube (510) installed across one side of the process chamber (100) from the other side, an inner tube (520) installed concentrically with the heater tube (510) inside the heater tube (510), and a heater wire (530) wound on the inner tube (520) to generate heat.

[0064] Meanwhile, the inner tube (520) in the heater unit (500) may be omitted, and in this case, a heater wire (530) that generates heat and is wound in a coil shape inside the heater tube (510) may be inserted.

[0065] Additionally, the heater unit (500) may further include a terminal unit (540) installed through the process chamber (100) to supply power to the heater heating wire (530) from the outside.

[0066] The heater unit (500) is a rod-shaped heater, and can heat the substrate (1) by receiving external power through the terminal unit (540) while the heater heating wire (530) inserted inside is wound in a coil shape.

[0067] The heater tube (510) and the inner tube (520) are in the form of concentric cylinders and can be made of various configurations and materials.

[0068] The above heater wire (530) is a heating element that generates heat by receiving power from the outside, and can generate heat by being wound in various shapes and methods on an inner tube (520).

[0069] That is, the heater unit (500) can compensate for the temperature deviation of the substrate (1) due to the influence of the aforementioned process gas through various shapes and winding methods of the heater heating wire (530) and the inner tube (520), and to this end, different heating temperatures can be formed along the longitudinal direction.

[0070] Hereinafter, a first embodiment of the heater part (500) according to the present invention will be described.

[0071] As shown in FIG. 2, the heater unit (500) may include a first heating area (S1) adjacent to the gas injection unit (300) and a second heating area (S2) adjacent to the gas exhaust unit (400) and having a lower heating temperature than the first heating area (S1).

[0072] That is, the heater unit (500) can divide the area adjacent to the gas injection unit (300) side in the longitudinal direction into a first heating area (S1) and the area adjacent to the gas exhaust unit (400) side into a second heating area (S2).

[0073] At this time, the first heating area (S1) and the second heating area (S2) may be separated by a pre-set boundary line or area, and as an example, based on the center of the heater part (500), the side of the gas injection part (300) may be separated as the first heating area (S1) and the side of the gas exhaust part (400) may be separated as the second heating area (S2).

[0074] The substrate (1) in the first heating region (S1) has a relatively low temperature due to the influence of the sprayed process gas, so it can form a heating temperature relatively higher than that of the second heating region (S2), and the substrate (1) in the second heating region (S2) has a relatively high temperature due to the influence of the process gas that moved along the horizontal flow, so it can form a heating temperature relatively lower than that of the first heating region (S2).

[0075] In this case, the temperature difference between the first heating region (S1) and the second heating region (S2) may be in the range of approximately 1°C to 50°C, and even when separated based on a specific boundary, the temperature transferred to the actual substrate (1) by convection of process gas, etc., within the processing space (S) occurring at the separated boundary may change in a linear form.

[0076] Accordingly, as a result, the substrate (1) can be heated to a uniform temperature.

[0077] More specifically, the heater wire (530) is a single wire, and the first pitch (P1), which is the winding pitch in the first heating region (S1), may be smaller than the second pitch (P2), which is the winding pitch in the second heating region (S2).

[0078] At this time, the winding pitch is the winding spacing of the heater wire (530) wound on the inner tube (520), and when the winding pitch is large, the amount of heat generated per unit area is reduced, so the heating temperature can be lowered relatively.

[0079] Therefore, the first pitch (P1), which is the winding pitch in the first heating region (S1), can be wound smaller than the second pitch (P2), which is the winding pitch in the second heating region (S2).

[0080] Meanwhile, as a second embodiment, the heater part (500) may have a heater heating wire (530) as an insulating wire as shown in FIG. 3, and the first diameter (D1), which is the winding diameter in the first heating region (S1), may be larger than the second diameter (D2), which is the winding diameter in the second heating region (S2).

[0081] In this case, since the heating element of the heater wire (530) has a longer length within a unit area as the winding diameter increases, the first diameter (D1), which is the winding diameter in the first heating region (S1) along the longitudinal direction of the inner tube (520), may be larger than the second diameter (D2), which is the winding diameter in the second heating region (S2).

[0082] That is, by making the winding diameter of the heater wire (530) larger in the first heating region (S1) than in the second heating region (S2), the heating temperature in the first heating region (S1) can be increased.

[0083] In addition, as another example, the inner tube (520) may have a diameter in the first heating region (S1) that is larger than the diameter in the second heating region (S2) so that the winding diameter of the heater wire (530) wound on the inner tube (520) is larger in the first heating region (S1).

[0084] Meanwhile, the heater part (500) of the present invention, as a third embodiment, as shown in FIG. 5, may have a first thickness (W1), which is the line width in the first heating region (S1), smaller than the second thickness (W2), which is the line width in the second heating region (S2).

[0085] Since the above heater wire (530) has a structure in which the resistance increases and the amount of heat generated increases as the wire width decreases, the first thickness (W1), which is the wire width of the heater wire (530) wound in the first heating region (S1), can be formed to be smaller than the second thickness (W2), which is the wire width in the second heating region (S2).

[0086] In this case, heater wires (530) having different line widths can be connected at the boundary line of the separated area.

[0087] Meanwhile, as a fourth embodiment, the heating temperature of the heater unit (500) can be lowered as it moves from the gas injection unit (300) side to the gas exhaust unit (400) side.

[0088] That is, unlike the previously described embodiment, the heater unit (500) can induce a linear change in heating temperature along the longitudinal direction, and thus the heating temperature can gradually decrease from the gas injection unit (300) side to the gas exhaust unit (400) side.

[0089] To this end, as shown in FIG. 5, the inner tube (520) of the heater part (500) may gradually decrease in diameter as it moves from the gas injection part (300) side to the gas exhaust part (400) side.

[0090] That is, the inner tube (520) may have a tapered shape such that the vertical cross-sectional diameter decreases as it goes from the gas injection part (300) side to the gas exhaust part (400) side, and by winding the heater wire (530) on the outer diameter, the diameter of the heater wire (530) can be naturally reduced gradually, thereby gradually lowering the heating temperature.

[0091] Meanwhile, as another example, the heater wire (530) is a single wire and can be wound such that the winding pitch gradually increases from the gas injection part (300) side to the gas exhaust part (400) side.

[0092] In addition, the heater unit (500), as illustrated in FIG. 6 as an embodiment of FIG. 5, may additionally include a third heating area (S3) that is formed adjacent to the gas injection unit (300) side than the first heating area (S1) and has a lower heating temperature than the first heating area (S1), with the boundary of the drop point of the process gas injected from the gas injection unit (300) on the substrate (1) side.

[0093] That is, the heater unit (500) causes the process gas sprayed from the gas injection unit (300) to fall at a certain distance inward from the edge of the substrate (1) rather than falling at the edge of the substrate (1), so that a temperature drop may not occur in the area between the edge and the point of fall.

[0094] In order to prevent an excessive temperature rise at the edge of the gas injection section (3000) of the substrate (1) due to this phenomenon, a third heating area (S3) may be additionally included, which is formed closer to the gas injection section (300) side than the first heating area (S1) and is separated from the first heating area (S1) by the process gas drop point.

[0095] At this time, the third heating region (S3) may have a lower heating temperature than the first heating region (S1), thereby improving the temperature variation of the substrate (1) according to the drop point of the process gas sprayed from the gas injection unit (300).

[0096] At this time, the third heating region (S3) may have a heating temperature equal to or higher than that of the second heating region (S2).

[0097] That is, the third heating region (S3) is less affected by the process gas than the portion of the substrate (1) within the second heating region (S2) that is affected by the heated process gas, so it can have a heating temperature equal to or higher than that of the second heating region (S2).

[0098] In addition, the substrate processing device according to the present invention, as illustrated in FIGS. 1 and 6, is a substrate processing device that performs substrate processing by arranging a plurality of substrates (1) spaced apart from each other in a vertical direction, comprising: a process chamber (100) that forms a processing space (S) in which the substrates (1) are processed; a plurality of substrate support members (200) that are installed vertically in the processing space (S) and support each of the substrates (1); a plurality of gas injection members (300) that correspond to each of the substrates (1) on one side of the process chamber (100) and spray process gas in a horizontal direction on the upper side of the substrates (1); and a plurality of gas exhaust members (400) that correspond to each of the substrates (1) on the other side of the process chamber (100) and exhaust the process gas moving horizontally on the upper side of the substrates (1). A plurality of heater units are installed vertically in the processing space (S) and extend from one side of the process chamber (100) to the other side to heat the substrates (1), and the heater unit (500) positioned at the lowest side among the heater units heats the substrate (1) at different heating temperatures along the length direction to compensate for the temperature variation of the substrate (1) due to the process gas.

[0099] Below, a detailed description of a configuration identical to the one described above is omitted, and a configuration for performing substrate processing by arranging a plurality of substrates (1) in a vertical direction and a heater unit (500) are described.

[0100] In addition, the process chamber (100) may have a plurality of substrates (1) arranged in the vertical direction on the front side as shown in FIG. 1, and as another example, it may be configured such that a plurality of slots (not shown) or gates are formed in the vertical direction in correspondence with the introduction and removal of a plurality of substrates (1) spaced apart from each other in the vertical direction.

[0101] That is, the process chamber (100) may be in a form that includes not only an embodiment in which a single gate is formed on the front side, but also a form in which a plurality of slots in the vertical direction corresponding to each substrate (1) are formed.

[0102] The above substrate support member (200) may be provided in multiple units in the vertical direction so that the multiple substrates (1) are spaced apart from each other in the vertical direction, so that substrate processing can be performed on the multiple substrates (1) within the processing space (S).

[0103] That is, the substrate support members (200) may be provided in multiple numbers spaced apart from each other in the vertical direction within the processing space (S), and one substrate (1) is seated and supported on one substrate support member (200), and a gas injection member (300) and a gas exhaust member (400) are provided in correspondence with each other, thereby forming a unit area for substrate processing.

[0104] As a result, a plurality of substrates (1), a substrate support (200), a gas injection unit (300), and a gas exhaust unit (400) are formed in the vertical direction within the process chamber (100) as a single unit area, so that a plurality of substrates (1) can be processed simultaneously.

[0105] The above gas injection unit (300) can inject process gas into each unit area for processing a plurality of substrates (1) within the processing space (S).

[0106] In this case, the plurality of gas injection units (300) may be provided in multiple numbers corresponding to the number of each substrate (1), and may also be provided at a position higher than the upper surface of the corresponding substrate (1) so that process gas is injected onto the upper surface of the substrate (1).

[0107] Meanwhile, the plurality of gas injection units (300) may be formed at regular intervals in the vertical direction, and process gas may be supplied at regular intervals in the left and right directions overall.

[0108] The above plurality of gas exhaust units (400) are spaced apart in the vertical direction within the processing space (S) to exhaust process gas to each unit area for processing a plurality of substrates (1).

[0109] In this case, the plurality of gas exhaust units (400) may be provided in multiple numbers corresponding to the number of each substrate (1), and may also be provided at a height higher than the upper surface of the corresponding substrate (1) so that process gas moving along the upper surface of the substrate (1) is sucked in.

[0110] Meanwhile, even when multiple unit regions for substrate processing are formed in the vertical direction, the processing regions (S) are connected to each other, so that some of the process gas injected from the gas injection unit (300) can move downward due to its own weight.

[0111] The vertical movement of such process gas is a factor in heat transfer, and there is a problem in that the temperature difference of the substrate (1) is exacerbated, particularly for the unit areas placed on the lower side.

[0112] To improve these problems, the heater unit (500) positioned at the lowest side among the heater units can heat the substrate (1) to different heating temperatures along the length direction to compensate for the temperature variation of the substrate (1) due to the process gas.

[0113] That is, the heater unit (500) according to the aforementioned embodiments may be provided in the lowest unit area among a substrate processing device in which a plurality of unit areas are arranged to process a plurality of substrates (1) in a vertical direction.

[0114] In addition, as another example, it may be optionally applied at a preset height or lower.

[0115] For example, the heater unit (500) according to the aforementioned embodiments may be applied only to the unit areas located at the bottom among the plurality of unit areas.

[0116] Specifically, it can be applied only to unit areas ranging from 10% to 30% located at the bottom of the plurality of unit areas, and in the remaining unit areas, a heater unit having the same heating temperature in the longitudinal direction can be disposed.

[0118] The foregoing merely describes some preferred embodiments that can be implemented by the present invention. As is well known, the scope of the present invention should not be interpreted as being limited to the above embodiments, and all technical concepts that share the fundamental principles with the technical concept of the present invention described above shall be considered to be included within the scope of the present invention. Explanation of the symbols

[0119] 1: Substrate 100: Process Chamber 200: Substrate support 300: Gas supply unit 400: Gas exhaust unit 500: Heater unit

Claims

Claim 1 A substrate processing device for performing substrate processing by arranging a plurality of substrates (1) in a vertical direction and spaced apart from each other, comprising: a process chamber (100) forming a processing space (S) in which the substrates (1) are processed; a plurality of substrate support members (200) installed in a vertical direction in the processing space (S) to support each of the substrates (1); a plurality of gas injection members (300) each corresponding to the substrates (1) on one side of the process chamber (100) and each injecting process gas in a horizontal direction on the upper side of the substrates (1); and a plurality of gas exhaust members (400) each corresponding to the substrates (1) on the other side of the process chamber (100) and exhausting the process gas moving in a horizontal direction on the upper side of the substrates (1). A substrate processing device comprising a plurality of heater units installed in a vertical direction in the processing space (S) and extending from one side of the process chamber (100) to the other side to heat the substrates (1), wherein the heater unit (500) positioned at the lower side among the plurality of heater units installed in a vertical direction heats the substrate (1) at different heating temperatures in the longitudinal direction to compensate for the temperature difference of the substrate (1) caused by the process gas flow of a relatively low temperature injected through the gas injection unit (300), and the remaining heater units, excluding the heater unit (500) positioned at the lower side among the plurality of heater units installed in a vertical direction, heat the substrate (1) at the same heating temperature in the longitudinal direction. Claim 2 A substrate processing apparatus according to claim 1, wherein the heater unit (500) disposed on the lower side comprises a heater tube (510) installed across one side of the process chamber (100) to the other side, and a heater wire (530) inserted inside the heater tube (510) and wound in a coil shape to generate heat. Claim 3 A substrate processing apparatus according to claim 2, wherein the heater unit (500) disposed on the lower side comprises a first heating area (S1) adjacent to the gas injection unit (300) side and a second heating area (S2) adjacent to the gas exhaust unit (400) side and having a heating temperature lower than that of the first heating area (S1). Claim 4 A substrate processing apparatus according to claim 3, wherein the heater heating wire (530) is a single wire, and the first pitch (P1), which is the winding pitch in the first heating region (S1), is smaller than the second pitch (P2), which is the winding pitch in the second heating region (S2). Claim 5 A substrate processing apparatus according to claim 3, wherein the heater heating wire (530) is a single wire, and the first diameter (D1), which is the winding diameter in the first heating region (S1), is larger than the second diameter (D2), which is the winding diameter in the second heating region (S2). Claim 6 A substrate processing apparatus according to claim 3, wherein the heater heating wire (530) is characterized in that the first thickness (W1), which is the line width in the first heating region (S1), is smaller than the second thickness (W2), which is the line width in the second heating region (S2). Claim 7 A substrate processing device according to claim 2, wherein the heater part (500) disposed on the lower side is characterized in that the heating temperature decreases as it goes from the gas injection part (300) side to the gas exhaust part (400) side. Claim 8 A substrate processing apparatus according to claim 7, wherein the heater heating wire (530) is a single wire and the winding diameter gradually decreases from the gas injection part (300) side to the gas exhaust part (400) side. Claim 9 A substrate processing apparatus according to claim 7, wherein the heater heating wire (530) is a single wire, and the winding pitch gradually increases from the gas injection part (300) side to the gas exhaust part (400) side. Claim 10 A substrate processing apparatus according to claim 3, wherein the heater unit (500) disposed on the lower side is formed closer to the gas injection unit (300) side than the first heating area (S1) with respect to the drop point of the process gas injected from the gas injection unit (300) on the substrate (1) side, and includes a third heating area (S3) having a lower heating temperature than the first heating area (S1). Claim 11 A substrate processing apparatus according to claim 10, wherein the third heating region (S3) has a heating temperature equal to or higher than the heating temperature of the second heating region (S2). Claim 12 A substrate processing apparatus according to claim 1 or claim 2, wherein the heater unit (500) disposed on the lower side comprises a single heater heating wire (530) that generates heat upon application of external power, and controls different heating temperatures in the longitudinal direction through power control applied based on at least one of the temperature deviation of the substrate (1) and the process gas supply flow rate. Claim 13 delete

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