Display device

Abstract

A display device according to one embodiment includes a display panel and a color conversion panel that overlaps with the display panel, wherein the display panel includes a transistor located on a first substrate, a light-emitting element electrically connected to the transistor, and a protective layer located between the transistor and the light-emitting element and including a first concave portion, wherein the light-emitting element is located on the first concave portion, and the color conversion panel includes a first color conversion layer, a second color conversion layer, and a transparent layer located between a second substrate and the display panel, and at least one of the first color conversion layer, the second color conversion layer, and the transparent layer overlaps with the first concave portion.

Description

Technology Field

[0001] The present disclosure relates to a display device including a color conversion panel. Background Technology

[0002] A display device including a color conversion panel using semiconductor nanocrystals such as quantum dots is proposed to reduce light loss occurring in color filters and to realize a display device having a high color reproduction rate.

[0003] It is necessary to provide a color conversion panel that increases the light emission efficiency of color-converted light within the color conversion panel and simultaneously provides a structurally stable color conversion panel and a display device including the same. The problem to be solved

[0004] The embodiments are intended to provide a display device in which a color conversion panel and a display panel are stably bonded while increasing light emission efficiency. means of solving the problem

[0005] A display device according to one embodiment includes a display panel and a color conversion panel that overlaps with the display panel, wherein the display panel includes a transistor located on a first substrate, a light-emitting element electrically connected to the transistor, and a protective layer located between the transistor and the light-emitting element and including a first concave portion, wherein the light-emitting element is located on the first concave portion, and the color conversion panel includes a first color conversion layer, a second color conversion layer, and a transparent layer located between a second substrate and the display panel, and at least one of the first color conversion layer, the second color conversion layer, and the transparent layer overlaps with the first concave portion.

[0006] The above display panel includes an encapsulation layer located on the light-emitting element, and the encapsulation layer may have a flat upper surface.

[0007] The above-mentioned bag layer includes a first convex portion facing the first concave portion, and the bag layer may include at least two regions with different thicknesses.

[0008] The above display device may further include a filling layer located between the display panel and the color conversion panel.

[0009] At least one of the first color conversion layer, the second color conversion layer, and the transparent layer may include a second concave portion facing the second substrate.

[0010] The above filling layer fills the second concave portion, and the filling layer may include two or more regions with different thicknesses.

[0011] The first concave portion and the second concave portion may overlap.

[0012] The first concave portion includes a first-1 concave portion that overlaps with the first color conversion layer and a first-2 concave portion that overlaps with the transmission layer, and the curvature of the first-1 concave portion and the first-2 concave portion are the same, and the area of ​​the first-1 concave portion may be larger than the area of ​​the first-2 concave portion.

[0013] The first concave portion includes a first-1 concave portion that overlaps with the first color conversion layer and a first-2 concave portion that overlaps with the transmission layer, and the curvature of the first-1 concave portion may be greater than the curvature of the first-2 concave portion.

[0014] The planar area of ​​the first color conversion layer may be larger than the planar area of ​​the transmission layer.

[0015] A display device according to one embodiment includes a display panel and a color conversion panel superimposed on the display panel, wherein the display panel includes a transistor located on a first substrate and a light-emitting element electrically connected to the transistor, and the color conversion panel includes a first color conversion layer, a second color conversion layer, and a transparent layer located between a second substrate and the display panel, and each of the first color conversion layer, the second color conversion layer, and the transparent layer includes a recess facing the second substrate.

[0016] The light-emitting element may have a flat surface.

[0017] The above display panel includes a protective layer located between the transistor and the light-emitting element and including a first concave portion, and the concave portion including the first color conversion layer, the second color conversion layer, and the transparent layer may be a second concave portion.

[0018] The light-emitting element may be located on the first concave portion.

[0019] The above display panel includes an encapsulation layer located on the light-emitting element, and the encapsulation layer may have a flat upper surface.

[0020] The above-mentioned bag layer includes a first convex portion corresponding to the first concave portion, and the bag layer may include at least two regions with different thicknesses.

[0021] It may further include a filling layer located between the above-mentioned display panel and the above-mentioned color conversion panel.

[0022] The above-mentioned filling layer fills the above-mentioned concave portion, and the above-mentioned filling layer may include two or more regions of different thicknesses.

[0023] The first concave portion includes a first-1 concave portion that overlaps with the first color conversion layer and a first-2 concave portion that overlaps with the transmission layer, and the curvature of the first-1 concave portion and the first-2 concave portion are the same, and the area of ​​the first-1 concave portion may be larger than the area of ​​the first-2 concave portion.

[0024] The first concave portion includes a first-1 concave portion that overlaps with the first color conversion layer and a first-2 concave portion that overlaps with the transmission layer, and the curvature of the first-1 concave portion may be greater than the curvature of the first-2 concave portion. Effects of the invention

[0025] According to the embodiments, the light emission efficiency is increased, and the color conversion panel and the display panel are stably bonded, thereby providing a display device with improved reliability. Brief explanation of the drawing

[0026] FIG. 1 is a cross-sectional view of a display device according to one embodiment. FIG. 2 is a cross-sectional view of a display device according to one embodiment. FIG. 3 is a cross-sectional view of a display device according to one embodiment. FIG. 4 is a cross-sectional view of a display device according to one embodiment. FIG. 5 is a cross-sectional view of a display device according to one embodiment. FIG. 6 is a plan view of a display device according to one embodiment. FIG. 7 is a plan view of a display device according to one embodiment. FIGS. 8, FIGS. 9, FIGS. 10, FIGS. 11, FIGS. 12, and FIGS. 13 are each cross-sectional views of a display device according to one embodiment. FIG. 14 is a schematic flowchart of a method for manufacturing a display device according to one embodiment. FIGS. 15, FIGS. 16, FIGS. 17, FIGS. 18, and FIGS. 19 are each schematic cross-sectional views of a display device according to a manufacturing method. FIG. 20 is a cross-sectional view of a display device according to a comparative example. Figure 21 is an image of a display device according to a comparative example. Specific details for implementing the invention

[0027] Hereinafter, various embodiments of the present invention will be described in detail with reference to the attached drawings so that those skilled in the art can easily implement the present invention. The present invention may be embodied in various different forms and is not limited to the embodiments described herein.

[0028] To clearly explain the present invention, parts unrelated to the explanation have been omitted, and the same reference numerals are used for identical or similar components throughout the specification.

[0029] Furthermore, the size and thickness of each component shown in the drawings are depicted arbitrarily for convenience of explanation, and thus the present invention is not necessarily limited to what is illustrated. Thicknesses have been enlarged in the drawings to clearly represent various layers and regions. Additionally, for convenience of explanation, the thickness of some layers and regions has been exaggerated in the drawings.

[0030] Furthermore, when a part such as a layer, membrane, region, or plate is said to be "on" or "on" another part, this includes not only the case where it is "directly above" the other part, but also the case where there is another part in between. Conversely, when a part is said to be "directly above" another part, it means that there is no other part in between. Also, being "on" or "on" a reference part means being located above or below the reference part, and does not necessarily mean being located "on" or "on" in the direction opposite to gravity.

[0031] Furthermore, throughout the specification, when a part is described as "including" a certain component, this means that, unless specifically stated otherwise, it does not exclude other components but may include additional components.

[0032] Additionally, throughout the specification, "planar" means when the subject part is viewed from above, and "cross-sectional" means when the cross-section obtained by vertically cutting the subject part is viewed from the side.

[0033] Hereinafter, a display device according to one embodiment will be described with reference to FIG. 1. FIG. 1 is a cross-sectional view of a display device according to one embodiment.

[0034] Referring to FIG. 1, a display device according to an embodiment includes a display panel (1000) and a color conversion panel (3000). Although not illustrated, the display device may further include a touch portion, and the touch portion may be located between the display panel (1000) and the color conversion panel (3000) or on the color conversion panel (3000).

[0035] First, the display panel (1000) will be described.

[0036] The display panel (1000) includes a first substrate (110), and a buffer layer (111) is positioned on the first substrate (110). The first substrate (110) may include a plastic substrate that is flexible, bendable, foldable, or rollable, or a rigid substrate.

[0037] The buffer layer (111) is silicon nitride (SiN x It may include silicon oxide (SiO2), etc. The buffer layer (111) is located between the first substrate (110) and the semiconductor layer (131) to block impurities introduced from the first substrate (110) during the crystallization process for forming polycrystalline silicon, thereby improving the characteristics of polycrystalline silicon and flattening the first substrate (110) to relieve stress on the semiconductor layer (131) formed on the buffer layer (111).

[0038] A metal layer (112) and an insulating layer (113) are located on the buffer layer (111). The metal layer (112) can prevent external light from reaching the semiconductor layer (131), thereby preventing the degradation of the semiconductor layer (131)'s properties. The metal layer (112) may include, for example, a metal, a metal alloy, or a conductive material equivalent to a metal.

[0039] The metal layer (112) may receive voltage from a region (174) extending from the source electrode (173) described later. Accordingly, the rate of change of current in the saturation region of the voltage-current characteristic graph of the transistor (Tr) may be reduced, and the characteristics as a driving transistor may be improved. However, the metal layer (112) is not limited to this and may be connected to other signal lines or be in a floating state.

[0040] The insulating layer (113) is silicon nitride (SiN x It may be an inorganic insulating layer containing silicon oxide (SiO2), etc., or an organic insulating layer.

[0041] A semiconductor layer (131) is positioned on an insulating layer (113). The semiconductor layer (131) may include at least one of polycrystalline silicon and an oxide semiconductor. The semiconductor layer (131) includes a channel region (C), a source region (S), and a drain region (D). The source region (S) and the drain region (D) are each positioned on either side of the channel region (C). The channel region (C) may include an intrinsic semiconductor that is not doped with impurities, and the source region (S) and the drain region (D) may include an impurity semiconductor that is doped with conductive impurities. The semiconductor layer (131) may be made of an oxide semiconductor, in which case a separate protective layer (not shown) may be added to protect the oxide semiconductor material, which is vulnerable to external environments such as high temperatures.

[0042] A gate insulating layer (121) is located on the semiconductor layer (131) and overlaps with the channel region (C). The gate insulating layer (121) is silicon nitride (SiN x It may be a single layer or a multilayer containing at least one of ) and silicon oxide (SiO2).

[0043] A gate electrode (124) is positioned on the gate insulating layer (121). The gate electrode (124) may be a single layer or a multilayer film in which a metal film comprising any one of copper (Cu), copper alloy, aluminum (Al), aluminum alloy, molybdenum (Mo), and molybdenum alloy is stacked.

[0044] An interlayer insulating layer (160) is located on the gate electrode (124) and the gate insulating layer (121). The interlayer insulating layer (160) is silicon nitride (SiN x It may include inorganic materials such as silicon oxide (SiO2) or organic materials.

[0045] A source electrode (173) and a drain electrode (175) are positioned on an interlayer insulating layer (160). The source electrode (173) and the drain electrode (175) are respectively connected to the source region (S) and the drain region (D) of the semiconductor layer (131) through contact holes formed in the interlayer insulating layer (160) and the gate insulating layer (121).

[0046] A protective layer (181, 182) is positioned over the interlayer insulating layer (160), source electrode (173), and drain electrode (175). Although the present specification depicts the protective layer (181, 182) as being composed of a multilayer film, it is not limited thereto and can be composed of a single layer.

[0047] The protective layer (181, 182) can be made of organic materials such as polyacrylates resin or polyimides resin, or a laminate of organic and inorganic materials or an inorganic film.

[0048] A protective layer (182) according to one embodiment includes concave portions (182R, 182G, 182B) having a concave shape toward the first substrate (110). The concave portions (182R, 182G, 182B) may be formed using a halftone mask or a slit mask, etc.

[0049] The thickness of the protective layer (182) may become thinner towards the center of the concave portion (182R, 182G, 182B) and may become thicker towards the edge of the concave portion (182R, 182G, 182B). The concave portion (182R, 182G, 182B) may have a lens structure facing the first substrate in cross-section.

[0050] Each of the concave portions (182R, 182G, 182B) can overlap with a light-emitting element (LD) to be described later. It may be in the form where one light-emitting element (LD) and one concave portion (182R, 182G, 182B) overlap.

[0051] A pixel electrode (191) is located on the protective layer (181, 182). The pixel electrode (191) is connected to a drain electrode (175) through a contact hole in the protective layer (181, 182).

[0052] A transistor (Tr) consisting of a gate electrode (124), a semiconductor layer (131), a source electrode (173), and a drain electrode (175) is connected to a pixel electrode (191) to supply current to a light-emitting element (LD).

[0053] A partition (261) is positioned above the protective layer (182) and the pixel electrode (191), and the partition (261) has an opening that overlaps with the pixel electrode (191) and defines a light-emitting region. The opening may have a planar shape similar to the pixel electrode (191). The opening may have a planar rhombus or an octagonal shape similar to a rhombus, but is not limited thereto and may have any shape such as a square or a polygon.

[0054] The partition wall (261) may include organic materials such as polyacrylates resin or polyimide resin, or silica-based inorganic materials.

[0055] A light-emitting layer (260) is positioned on a pixel electrode (191) that overlaps with an opening. The light-emitting layer (260) may be composed of a low-molecular-weight organic material or a high-molecular-weight organic material such as PEDOT (Poly 3,4-ethylenedioxythiophene). Additionally, the light-emitting layer (260) may be a multilayer film further comprising one or more of a hole injection layer (HIL), a hole transporting layer (HTL), an electron transporting layer (ETL), and an electron injection layer (EIL).

[0056] The light-emitting layer (260) can be located mostly within the opening, and can also be located on the side or above the partition wall (261).

[0057] A common electrode (270) is located on the light-emitting layer (260). The common electrode (270) can be located across multiple pixels and can receive a common voltage through a common voltage transfer section (not shown) in a non-display area.

[0058] The pixel electrode (191), the light-emitting layer (260), and the common electrode (270) can form a light-emitting element (LD).

[0059] Here, the pixel electrode (191) may be an anode, which is a hole injection electrode, and the common electrode (270) may be a cathode, which is an electron injection electrode. However, the embodiment is not necessarily limited thereto, and depending on the driving method of the light-emitting display device, the pixel electrode (191) may be a cathode and the common electrode (270) may be an anode.

[0060] Holes and electrons are injected into the organic light-emitting layer (260) from the pixel electrode (191) and the common electrode (270), respectively, and light is emitted when the exciton formed by the combination of the injected holes and electrons falls from the excited state to the ground state.

[0061] The pixel electrode (191), light-emitting layer (260), and common electrode (270) located on the concave portion (182R, 182G, 182B) may have a concave shape toward the first substrate (110) according to the shape of the concave portion (182R, 182G, 182B). That is, each of the pixel electrode (191), light-emitting layer (260), and common electrode (270) overlapping with the concave portion (182R, 182G, 182B) has a concave shape substantially identical to one side of the concave portion (182R, 182G, 182B).

[0062] When the light-emitting element (LD), particularly the light-emitting layer (260), has a concave shape, the area of ​​the light-emitting layer (260) can be increased. Specifically, the light-emitting layer (260) on a plane can have a width (or area) such as A2, but when the light-emitting layer (260) has a concave shape, the area occupied on the plane is the same, but substantially, it has an area of ​​A1 that is larger than A2. According to this, the light-emitting area increases, and thus the amount of light provided to the color conversion layer (330R, 330G) and the transmission layer (330B) increases, thereby increasing the light emission efficiency.

[0063] Meanwhile, light emitted from the light-emitting layer (260) having a concave shape can be emitted along a light path as shown in FIG. 1. Specifically, light output from the light-emitting layer (260) can be collected in the encapsulation layer (400) and then emitted again to the color conversion layer (330R). According to this, the light-emitting layer (260) can provide light up to the edge of the color conversion layer (330R, 330G) or the transmission layer (330B), so the light emission efficiency can be increased as the amount of light supplied to the color conversion layer (330R, 330G) or the transmission layer (330B) increases.

[0064] An encapsulation layer (400) is positioned on the common electrode (270). The encapsulation layer (400) can cover and seal not only the upper surface but also the side surface of the light-emitting element (LD). Since the light-emitting element is very vulnerable to moisture and oxygen, the encapsulation layer (400) seals the light-emitting element (LD) to block the inflow of external moisture and oxygen.

[0065] The packaging layer (400) may include a plurality of layers, and may be formed as a composite film including both an inorganic film (401, 403) and an organic film (402), and may be formed as a triple layer in which the first inorganic film (401), the organic film (402), and the second inorganic film (403) are formed sequentially.

[0066] The encapsulation layer (400) may include a first convex portion (400a) that fills the first concave portion (182R, 182G, 182B). In particular, the first inorganic film (401) and the organic film (402) may have a shape that fills the concave portion (182R, 182G, 182B) and protrudes toward the first substrate (110). The organic film (402) may provide a flat upper surface, and accordingly, the second inorganic film (403) may be formed flat. The upper surface of the encapsulation layer (400) may be flat.

[0067] According to one embodiment, the encapsulation layer (400) may include at least two regions with different thicknesses. Specifically, the encapsulation layer (400) overlapping with the light-emitting element (LD) may be thicker than the encapsulation layer (400) overlapping with the partition wall (261). Thus, the light-emitting element (LD) can be protected even if foreign substances are introduced into the encapsulation layer (400) during the process of manufacturing the display panel (1000) or bonding the display panel (1000) and the color conversion panel (3000).

[0068] A color-changing panel (3000) is positioned on the bag layer (400).

[0069] The color conversion panel (3000) includes a second substrate (310) facing the first substrate (110) of the display panel (1000). The second substrate (310) may include a plastic substrate that is flexible, bendable, foldable, or rollable, or a rigid substrate.

[0070] The light-blocking member (320) is positioned on the second substrate (310) and prevents light passing through the first color conversion layer (330R), the second color conversion layer (330G), and the transmission layer (330B) from being mixed and visible, thereby increasing the contrast ratio of the display device.

[0071] A first color filter (321R), a second color filter (321G), and a third color filter (321B) are positioned on the second substrate (310) and the light-blocking member (320). The first color filter (321R) transmits red light that has passed through the first color conversion layer (330R) and can absorb light of the remaining wavelengths, thereby increasing the purity of red light emitted toward the second substrate (310). The second color filter (321G) transmits green light and can absorb light of the remaining wavelengths, thereby increasing the purity of green light emitted toward the second substrate (310). Similarly, the third color filter (321B) transmits blue light and can absorb light of the remaining wavelengths, thereby increasing the purity of blue light emitted toward the second substrate (310).

[0072] A first insulating layer (325) is positioned over the first color filter (321R), the second color filter (321G), and the third color filter (321B). The first insulating layer (325) prevents the components of the first color filter (321R), the second color filter (321G), and the third color filter (321B) from diffusing outward.

[0073] A partition wall (340) is located on the boundary between the first color filter (321R), the second color filter (321G), and the third color filter (321B). The partition wall (340) can define the area where the first color conversion layer (330R), the second color conversion layer (330G), and the transmission layer (330B) are located.

[0074] A first color conversion layer (330R), a second color conversion layer (330G), and a transmission layer (330B) are located within the area defined by the partition wall (340).

[0075] Each of the color conversion layer (330R, 330G) and the transmission layer (330B) may include a second concave portion (331R, 331G, 331B). One surface of the color conversion layer (330R, 330G) and the transmission layer (330B) may have a concave shape toward the second substrate (310). Each of the color conversion layer (330R, 330G) and the transmission layer (330B) may have a shape that is thicker closer to the partition wall (340) and thinner further away from the partition wall (340). Each of the color conversion layer (330R, 330G) and the transmission layer (330B) has a shape that is thicker further away from the center and thinner closer to the center. Each of the color conversion layer (330R, 330G) and the transmission layer (330B) may have a cross-sectional lens structure.

[0076] According to one embodiment, the area occupied by the light-emitting layer (260) and the area occupied by the color-converting layer (330R) may be different. Specifically, the width (W2) of each of the color-converting layer (330R, 330G) and the transparent layer (330B) may be larger than the width (W1) of the light-emitting layer (260).

[0077] At this time, when the light-emitting layer (260) has a flat surface and emits light in a direction perpendicular to the first substrate (110), light may not reach the edges of the color conversion layer (330R, 330G) and the transmission layer (330B). However, according to one embodiment, when the light-emitting layer (260) has a concave shape, the light emitted from the light-emitting layer (260) may be gathered toward the encapsulation layer (400) and then spread out toward the color conversion layer (330R, 330G) and the transmission layer (330B). According to this light path, the light emitted from the light-emitting layer (260) can be provided to the edges of the color conversion layer (330R, 330G) and the transmission layer (330B). The color conversion layer (330R, 330G) and the transmission layer (330B) can receive more light, thereby increasing the amount of light emitted from the color conversion layer (330R, 330G) and the transmission layer (330B).

[0078] A display panel (1000) that provides light to a color conversion panel (3000) can emit light of a first wavelength, and a transparent layer (330B) transmits light of the first wavelength and includes a plurality of scatterers (301a).

[0079] The light of the first wavelength may be blue light having a maximum emission peak wavelength of about 380 nm to about 480 nm, for example, about 420 nm or more, about 430 nm or more, about 440 nm or more, or about 445 nm or more, and about 470 nm or less, about 460 nm or less, or about 455 nm or less.

[0080] The first color conversion layer (330R) converts light of a first wavelength incident from a display panel (1000) into red light and includes a plurality of scatterers (301a) and a plurality of first semiconductor nanocrystals (301R). The red light may have a maximum emission peak wavelength of about 600 nm to about 650 nm, for example, about 620 nm to about 650 nm.

[0081] The second color conversion layer (330G) converts light of a first wavelength incident from a display panel (1000) into green light and includes a plurality of scatterers (301a) and a plurality of second semiconductor nanocrystals (301G). The green light may have a maximum emission peak wavelength of about 500 nm to about 550 nm, for example, about 510 nm to about 550 nm.

[0082] Multiple scatterers (301a) can scatter light incident on the first color conversion layer (330R), the second color conversion layer (330G), and the transmission layer (330B) to increase light efficiency.

[0083] Each of the first semiconductor nanocrystal (301R) and the second semiconductor nanocrystal (301G) may independently comprise a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, a Group IV element or compound, a Group I-III-VI compound, a Group II-III-VI compound, a Group I-II-IV-VI compound, or a combination thereof. The quantum dots may not contain cadmium.

[0084] The above Group II-VI compounds are diatomic compounds selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof; ternary compounds selected from the group consisting of AgInS, CuInS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, and mixtures thereof; and may be selected from the group consisting of four-element compounds selected from the group consisting of HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, and mixtures thereof. The group II-VI compounds may further include a group III metal.

[0085] The above III-V group compounds may be selected from the group consisting of: diatomic compounds selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; ternary compounds selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb, InPAs, InZnP, InPSb, and mixtures thereof; and quaternary compounds selected from the group consisting of GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, InZnP, and mixtures thereof. The above III-V group compounds may further include a group II metal (e.g., InZnP).

[0086] The above IV-VI group compounds may be selected from the group consisting of diatomic compounds selected from SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof; ternary compounds selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof; and quaternary compounds selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof.

[0087] The above Group IV elements or compounds may be selected from the group consisting of monatomic compounds selected from the group consisting of Si, Ge, and combinations thereof; and diatomic compounds selected from the group consisting of SiC, SiGe, and combinations thereof, but are not limited thereto.

[0088] Examples of the above Group I-III-VI compounds include, but are not limited to, CuInSe2, CuInS2, CuInGaSe, and CuInGaS. Examples of the above Group I-II-IV-VI compounds include, but are not limited to, CuZnSnSe and CuZnSnS. The above Group IV element or compound may be selected from the group consisting of a monatomic element selected from the group consisting of Si, Ge, and mixtures thereof; and a diatomic compound selected from the group consisting of SiC, SiGe, and mixtures thereof.

[0089] The above Group II-III-VI compounds may be selected from the group consisting of ZnGaS, ZnAlS, ZnInS, ZnGaSe, ZnAlSe, ZnInSe, ZnGaTe, ZnAlTe, ZnInTe, ZnGaO, ZnAlO, ZnInO, HgGaS, HgAlS, HgInS, HgGaSe, HgAlSe, HgInSe, HgGaTe, HgAlTe, HgInTe, MgGaS, MgAlS, MgInS, MgGaSe, MgAlSe, MgInSe, and combinations thereof, but are not limited thereto.

[0090] The above Group I-II-IV-VI compounds may be selected from CuZnSnSe and CuZnSnS, but are not limited thereto.

[0091] In one embodiment, the quantum dot may not contain cadmium. The quantum dot may include semiconductor nanocrystals based on a Group III-V compound containing indium and phosphorus. The Group III-V compound may further include zinc. The quantum dot may include semiconductor nanocrystals based on a Group II-VI compound containing a chalcogen element (e.g., sulfur, selenium, tellurium, or a combination thereof) and zinc.

[0092] In quantum dots, the aforementioned binary compounds, ternary compounds, and / or quaternary compounds may exist within the particle at a uniform concentration, or may exist within the same particle with concentration distributions divided into partially different states. Additionally, one quantum dot may have a core / shell structure surrounding another quantum dot. The interface between the core and the shell may have a concentration gradient in which the concentration of the element present in the shell decreases toward the center.

[0093] In some embodiments, the quantum dot may have a core-shell structure comprising a core containing the aforementioned nanocrystal and a shell surrounding the core. The shell of the quantum dot may serve as a protective layer to maintain semiconductor properties by preventing chemical degradation of the core and / or as a charging layer to impart electrophoretic properties to the quantum dot. The shell may be a single layer or a multilayer. The interface between the core and the shell may have a concentration gradient in which the concentration of elements present in the shell decreases toward the center. Examples of the shell of the quantum dot include metal or non-metal oxides, semiconductor compounds, or combinations thereof.

[0094] For example, the oxide of the metal or nonmetal mentioned above may be exemplified as a binary compound such as SiO2, Al2O3, TiO2, ZnO, MnO, Mn2O3, Mn3O4, CuO, FeO, Fe2O3, Fe3O4, CoO, Co3O4, NiO, or a ternary compound such as MgAl2O4, CoFe2O4, NiFe2O4, CoMn2O4, but the present invention is not limited thereto.

[0095] In addition, the above semiconductor compounds may be examples of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, InSb, AlAs, AlP, AlSb, etc., but the present invention is not limited thereto.

[0096] The interface between the core and the shell may have a concentration gradient in which the concentration of elements present in the shell decreases toward the center. Additionally, the semiconductor nanocrystal may have a structure comprising a single semiconductor nanocrystal core and a multilayer shell surrounding it. In one embodiment, the multilayer shell may have two or more layers, e.g., two, three, four, five, or more layers. Two adjacent layers of the shell may have a single composition or different compositions. Each layer in the multilayer shell may have a composition that varies along the radius.

[0097] Quantum dots can have a full width of half maximum (FWHM) of the emission wavelength spectrum of about 45 nm or less, preferably about 40 nm or less, and more preferably about 30 nm or less, and color purity or color reproducibility can be improved in this range. In addition, since the light emitted through these quantum dots is emitted in all directions, the viewing angle can be improved.

[0098] The above quantum dot may have a shell material and a core material having different energy band gaps. For example, the energy band gap of the shell material may be larger than that of the core material. In another embodiment, the energy band gap of the shell material may be smaller than that of the core material. The above quantum dot may have a multilayer shell. In a multilayer shell, the energy band gap of the outer layer may be larger than that of the inner layer (i.e., the layer closest to the core). In a multilayer shell, the energy band gap of the outer layer may be smaller than that of the inner layer.

[0099] Quantum dots can control their absorption / emission wavelengths by adjusting their composition and size. The maximum emission peak wavelength of the quantum dots can have a wavelength range of ultraviolet to infrared or longer.

[0100] The quantum dot may include an organic ligand (e.g., having a hydrophobic residue and / or a hydrophilic residue). The organic ligand residue may be bonded to the surface of the quantum dot. The organic ligand may include RCOOH, RNH2, R2NH, R3N, RSH, R3PO, R3P, ROH, RCOOR, RPO(OH)2, RHPOOH, R2POOH, or a combination thereof, wherein R is independently a C3 to C40 (e.g., C5 or more and C24 or less) substituted or unsubstituted alkyl, a C3 to C40 (e.g., C5 or more and C24 or less) substituted or unsubstituted aliphatic hydrocarbon group such as a C3 to C40 (e.g., substituted or unsubstituted alkenyl), an C6 to C40 (e.g., C6 or more and C20 or less) substituted or unsubstituted aromatic hydrocarbon group such as a C6 to C40 (e.g., C6 or more and C20 or less) substituted or unsubstituted aryl group, or a combination thereof.

[0101] Examples of the above organic ligands include thiol compounds such as methanethiol, ethanethiol, propanethiol, butanethiol, pentanthiol, hexanethiol, octanethiol, dodecanethiol, hexadecanethiol, octadecanethiol, and benzylthiol; amines such as methaneamine, ethaneamine, propaneamine, butanamine, pentylamine, hexylamine, octylamine, nonylamine, decylamine, dodecylamine, hexadecylamine, octadecylamine, dimethylamine, diethylamine, dipropylamine, tributylamine, and trioctylamine; and carboxylic acid compounds such as methanoic acid, ethanoic acid, propanoic acid, butanoic acid, pentanic acid, hexanoic acid, heptanoic acid, octanoic acid, dodecanoic acid, hexadecanoic acid, octadecanic acid, oleic acid, and benzoic acid. Phosphine compounds such as methylphosphine, ethylphosphine, propylphosphine, butylphosphine, pentylphosphine, octylphosphine, dioctylphosphine, tributylphosphine, trioctylphosphine, etc.; phosphine compounds or their oxide compounds such as methylphosphine oxide, ethylphosphine oxide, propylphosphine oxide, butylphosphine oxide, pentylphosphine oxide, tributylphosphine oxide, octylphosphine oxide, dioctylphosphine oxide, trioctylphosphine oxide, etc.; diphenylphosphine, triphenylphosphine compounds or their oxide compounds; C5 to C20 alkyl phosphine acids such as hexylphosphine, octylphosphine, dodecanephosphine, tetradecanephosphine, hexadecanephosphine, octadecanphosphine, etc., and C5 to C20 alkyl phosphonic acids; etc., but are not limited thereto. Quantum dots may include a hydrophobic organic ligand alone or as a mixture of one or more. The hydrophobic organic ligand may not include photopolymerizable residues (e.g., acrylate groups, methacrylate groups, etc.).

[0102] A second insulating layer (350) is located between the first color conversion layer (330R), the second color conversion layer (330G), and the transparent layer (330B) and the display panel (1000). The second insulating layer (350) covers and protects the first color conversion layer (330R), the second color conversion layer (330G), and the transparent layer (330B), thereby preventing the components of the filling layer (4000) injected when the color conversion panel (3000) is attached to the display panel (1000) from flowing into the first color conversion layer (330R), the second color conversion layer (330G), and the transparent layer (330B).

[0103] The second insulating layer (350) is formed along the first color conversion layer (330R), the second color conversion layer (330G), and the transparent layer (330B) and may have a concave shape. The second insulating layer (350) may overlap with the second concave portions (331R, 331G, 331B). The second insulating layer (350) may have substantially the same thickness as the second substrate (310).

[0104] A filling layer (4000) is positioned between the display panel (1000) and the color conversion panel (3000). After manufacturing each of the display panel (1000) and the color conversion panel (3000), they are arranged to face each other, and a filling layer (4000) is filled between the display panel (1000) and the color conversion panel (3000) to assemble them and form a display device.

[0105] The filling layer (4000) may have a convex shape toward the second substrate (310). In particular, the filling layer (4000) may have a convex shape while filling the second concave portions (331R, 331G, 331B) of the color conversion layer (330R, 330G) and the transparent layer (330B). The filling layer (4000) may include at least two regions with different thicknesses relative to the second substrate (310). For example, the thickness of the filling layer (4000) overlapping the color conversion layer (330R, 330G) and the transparent layer (330B) may be greater than the thickness of the filling layer (4000) overlapping the partition wall (340).

[0106] In a state where the display panel (1000) and the color conversion panel (3000) are bonded together, a filling layer (4000) and an encapsulation layer (400) may be located between the light-emitting element (LD) and the color conversion layer (330R, 330G) or between the light-emitting element (LD) and the transmission layer (330B).

[0107] The filling layer (4000) and the encapsulation layer (400) may have a first thickness (T1) in the area where the light-emitting element (LD) and the color conversion layer (330R, 330G) overlap, and a second thickness (T2) in the area where the partition (261) of the display panel (1000) and the partition (340) of the color conversion panel (3000) overlap. The first thickness (T1) may be larger than the second thickness (T2).

[0108] In the process of bonding the display panel (1000) and the color conversion panel (3000), foreign substances may be introduced into the filling layer (4000) or the encapsulation layer (400). If the foreign substances are introduced into the color conversion layer (330R, 330G), the transmission layer (330B), or the light-emitting element (LD), the reliability of the display device may be reduced. However, the larger the first thickness (T1), the more effectively the color conversion layer (330R, 330G), the transmission layer (330B), and the light-emitting element (LD) are prevented from being damaged even if foreign substances are introduced. Additionally, by reducing the second thickness (T2), the overall thickness of the device can be prevented from becoming too thick.

[0109] Meanwhile, the present specification describes an embodiment in which the display panel (1000) is an organic light-emitting display panel. However, the type of display panel (1000) is not limited thereto and may be composed of various types of panels. For example, the display panel (1000) may be composed of a liquid crystal display panel, an electrophoretic display panel, an electrowetting display panel, etc. Additionally, the display panel (1000) may be composed of a next-generation display panel such as a micro light-emitting diode (Micro LED) display panel, a quantum dot light-emitting diode (QLED) display panel, or a quantum dot organic light-emitting diode (QD-OLED) display panel.

[0110] A Micro LED display panel is constructed such that each pixel is composed of light-emitting diodes with a size of 10 to 100 micrometers. Such Micro LED display panels have advantages such as using inorganic materials, the ability to omit color filters and backlights, fast response speed, the ability to achieve high brightness with low power, and not breaking when bent. A Quantum Dot Light-Emitting Diode (QLED) display panel is constructed by attaching a film containing quantum dots or by depositing a material containing quantum dots. Quantum dots refer to particles composed of inorganic materials such as indium and cadmium that emit light on their own and have a diameter of several nanometers or less. By controlling the particle size of the quantum dots, light of a desired color can be displayed. A Quantum Dot Organic Light-Emitting Diode (QD-OLED) display panel is constructed by using a blue organic light-emitting diode as a light source and attaching a film containing red and green quantum dots on it, or by depositing a material containing red and green quantum dots to create color. The display panel (1000) according to one embodiment may also be composed of various other display panels.

[0111] Hereinafter, a display device according to FIGS. 2 to 13 will be described. At this time, the description of components identical or similar to the components described in FIG. 1 will be omitted. FIG. 2 is a cross-sectional view of a display device according to one embodiment, FIG. 3 is a cross-sectional view of a display device according to one embodiment, FIG. 4 is a cross-sectional view of a display device according to one embodiment, FIG. 5 is a cross-sectional view of a display device according to one embodiment, FIG. 6 is a plan view of a display device according to one embodiment, FIG. 7 is a plan view of a display device according to one embodiment, FIG. 8 is a cross-sectional view of a display device according to one embodiment, and FIG. 9, FIG. 10, FIG. 11, FIG. 12, and FIG. 13 are each cross-sectional views of a display device according to one embodiment.

[0112] First, referring to FIG. 2, a display device according to one embodiment may include a display panel (1000) according to the embodiment of FIG. 1.

[0113] A color conversion panel (3000) according to the embodiment of FIG. 2 includes a light-blocking member (320) located on a second substrate (310), a first color filter (321R), a second color filter (321G), and a third color filter (321B). A first insulating layer (325) is located between the first color filter (321R), the second color filter (321G), and the third color filter (321B) and the display panel (1000).

[0114] A partition wall (340) is positioned on the first insulating layer (325) that overlaps with the partition wall (261) of the display panel (1000).

[0115] A first color-changing layer (330R), a second color-changing layer (330G), and a transparent layer (330B) may be located between adjacent partitions (340). According to one embodiment, the first color-changing layer (330R), the second color-changing layer (330G), and the transparent layer (330B) may be formed to have substantially the same height as the partition (340). According to an embodiment, each of the first color-changing layer (330R), the second color-changing layer (330G), and the transparent layer (330B) may have a shape that is slightly convex compared to the partition (340), but is not limited thereto and may have a shape that is slightly concave compared to the partition (340).

[0116] The upper surface of the partition wall (340) facing the display panel (1000), the upper surface of the first color conversion layer (330R), the upper surface of the second color conversion layer (330G), and the upper surface of the transparent layer (330B) may be the same or form a surface of the same level.

[0117] A second insulating layer (350) is positioned on the upper surface of the partition wall (340) facing the display panel (1000), the upper surface of the first color conversion layer (330R), the upper surface of the second color conversion layer (330G), and the upper surface of the transparent layer (330B).

[0118] A filling layer (4000) may be positioned between the color conversion panel (3000) and the display panel (1000). The filling layer (4000) may be positioned between the display panel (1000) and the color conversion panel (3000), which have a substantially flat surface. More specifically, the filling layer (4000) may be positioned between one surface of the encapsulation layer (400) and one surface of the second insulating layer (350). The filling layer (4000) may have a substantially uniform thickness over the entire surface of the first substrate (110).

[0119] A display panel (1000) according to one embodiment may include a first concave portion (182R, 182G, 182B) and a convex portion (400a) that fills the first concave portion (182R, 182G, 182B). Accordingly, the thickness from the upper surface of the encapsulation layer (400) to the upper surface of the light-emitting element (LD) may be increased. This prevents damage to the light-emitting element (LD) caused by foreign substances introduced during the process of bonding the display panel (1000) and the color conversion panel (3000).

[0120] In addition, the light-emitting element (LD) has a concave shape, thereby providing more light to the color conversion layer (330R, 330G) and the transmission layer (330B), so that the amount of light emitted from the color conversion panel (3000) and the light conversion efficiency can be increased.

[0121] Referring to FIG. 3, a color conversion panel (3000) according to one embodiment may be the same as the color conversion panel (3000) of FIG. 1.

[0122] A display panel (1000) according to one embodiment includes a transistor (Tr) located on a first substrate (110) and a light-emitting element (LD) electrically connected to the transistor (Tr). A protective layer (181, 182) is located between the light-emitting element (LD) and the transistor (Tr). The protective layer (181, 182) according to one embodiment may provide a flat upper surface.

[0123] The pixel electrode (191) located on the protective layer (181, 182) may have a flat surface. Additionally, the light-emitting layer (260) and the common electrode (270) disposed on the pixel electrode (191) may also have a flat surface. A light-emitting element (LD) according to one embodiment may emit light on a generally flat surface.

[0124] A color conversion panel (3000) according to one embodiment includes a first color conversion layer (330R), a second color conversion layer (330G), and a transmission layer (330B) located on a second substrate (310). At this time, each of the first color conversion layer (330R), the second color conversion layer (330G), and the transmission layer (330B) may include a concave portion (331R, 331G, 331B) facing the second substrate (310).

[0125] A second insulating layer (350) may be located between the first color conversion layer (330R), the second color conversion layer (330G), the transparent layer (330B), the partition (340), and the display panel (1000). A filling layer (4000) may be located between the second insulating layer (350) and the display panel (1000).

[0126] The filling layer (4000) may have a shape that fills the concave portions (331R, 331G, 331B) of the first color conversion layer (330R), the second color conversion layer (330G), and the transparent layer (330B). The filling layer (4000) may include a convex portion (4000a) protruding toward the second substrate (310). The convex portion (4000a) of the filling layer (4000) may overlap with the light-emitting area of ​​the display panel (1000).

[0127] Foreign substances may be introduced during the process of bonding the color conversion panel (3000) and the display panel (1000). In the area where the light-emitting element (LD) of the display panel (1000) and the color conversion layer (330R, 330G) overlap, or where the light-emitting element (LD) and the transparent layer (330B) overlap, the thickness of the filling layer (4000) may be thick due to the concave portion (331R, 331G, 331B). Additionally, the thickness of the filling layer (4000) overlapping with the partition wall (340) may be thinner than the thickness of the filling layer (4000) overlapping with the color conversion layer (330R, 330G) and the transparent layer (330B). The filling layer (4000) according to one embodiment may include at least two regions with different thicknesses.

[0128] Even if foreign substances are introduced, the relatively thick filling layer (4000) can prevent damage to the light-emitting element (LD) or damage to the color conversion layer (330R, 330G) and the transmission layer (330B). In addition, by keeping the thickness of the filling layer (4000) overlapping with the partition wall (340) thin, the thickness of the device can be prevented from becoming thick.

[0129] A display device according to one embodiment will be described with reference to FIG. 4.

[0130] As illustrated in FIG. 4, the first-1 concave portion (182R) of the protective layer (182) located in the red light emission region (R) and the first-2 concave portion (182B) of the protective layer (182) located in the blue light emission region (B) may have substantially the same curvature.

[0131] However, according to one embodiment, the area (S1) of the first-1 concave portion (182R) of the protective layer (182) located in the red light emission region (R) may be larger than the area (S2) of the first-2 concave portion (182B) of the protective layer (182) located in the blue light emission region (B). Accordingly, the area of ​​the light-emitting layer (260) located on the first-1 concave portion (182R) overlapping with the red light emission region (R) may be larger than the area of ​​the light-emitting layer (260) located on the first-2 concave portion (182B) overlapping with the blue light emission region (B).

[0132] According to one embodiment, the blue light emission region (B) transmits the light emitted from the light-emitting element (LD) as is, and the red light emission region (R) converts the light emitted from the light-emitting element (LD) into red light and emits it. At this time, the light conversion efficiency for converting the incident light into red light may be less than 100%.

[0133] Accordingly, by providing a larger area for the light-emitting layer located in the concave portion (182R) overlapping with the red light emission region (R) than for the light-emitting layer located in the concave portion (182B) overlapping with the blue light emission region (B), a larger amount of light can be provided to the first color conversion layer (330R). Since the first color conversion layer (330R) receives a relatively larger amount of light compared to the transmission layer (330B), the amount of light emitted from the first color conversion layer (330R) can be increased.

[0134] Figure 4 illustrates a comparison between a red light emission region (R) and a blue light emission region (B), but it is not limited thereto and can be applied to a green light emission region (G) and a blue light emission region (B).

[0135] Next, a display panel (1000) according to one embodiment will be described with reference to FIG. 5. The first-1 concave portion (182R) of the protective layer (182) located in the red light emission region (R) and the first-2 concave portion (182B) of the protective layer (182) located in the blue light emission region (B) may have different curvatures. According to one embodiment, the first-1 concave portion (182R) of the protective layer (182) located in the red light emission region (R) may have a larger curvature than the first-2 concave portion (182B) of the protective layer (182) located in the blue light emission region (B). Accordingly, the area of ​​the light-emitting layer (260) located in the red light emission region (R) may be larger than the area of ​​the light-emitting layer (260) located in the blue light emission region (B).

[0136] A light-emitting element (LD) located in the red light emission region (R) can provide a larger amount of light to the first color conversion layer (330R). Since the first color conversion layer (330R) receives a relatively larger amount of light compared to the transmission layer (330B), the amount of light emitted from the first color conversion layer (330R) can be increased.

[0137] Figure 5 illustrates a comparison between a red light emission region (R) and a blue light emission region (B), but it is not limited thereto and can be applied to a green light emission region (G) and a blue light emission region (B).

[0138] Next, a schematic plan of a color conversion panel (3000) according to one embodiment will be described with reference to FIGS. 6 and 7.

[0139] As illustrated in FIGS. 6 and FIGS. 7, respectively, a display device according to one embodiment may include a plurality of pixels (PX1, PX2, PX3). In this case, the first pixel (PX1) may be a pixel that displays red, the second pixel (PX2) may be a pixel that displays green, and the third pixel (PX3) may be a pixel that displays blue.

[0140] In addition, as shown in FIG. 6, a plurality of pixels (PX1, PX2, PX3) may have the same area, or as shown in FIG. 7, a plurality of pixels (PX1, PX2, PX3) may have different areas. For example, the area of ​​the third pixel (PX3) representing blue may be smaller than that of the first pixel (PX1) representing red and the second pixel (PX2) representing green.

[0141] As shown in FIGS. 6 and 7, a plurality of pixels (PX1, PX2, PX3) may have various planar shapes and planar arrangements, but are not limited thereto.

[0142] According to one embodiment, the first color conversion layer (330R) may have a planar shape similar to the first pixel (PX1), the second color conversion layer (330G) may have a planar shape similar to the second pixel (PX2), and the transmission layer (330B) may have a planar shape similar to the third pixel (PX3). At this time, the first concave portion (182R, 182G, 182B) and the second concave portion (331R, 331G, 331B) may be circular in shape on a planar surface or may have a shape similar to the first pixel (PX1) to the third pixel (PX3) on a planar surface, but are not limited thereto.

[0143] Referring to FIG. 8, a color conversion panel (3000) according to one embodiment includes a first color filter (321R) located between a second substrate (310) and a first color conversion layer (330R). The first color filter (321R) can increase the color purity of the light emitted from the first color conversion layer (330R) by blocking light that is transmitted to the second substrate (310) without being color converted in the first color conversion layer (330R).

[0144] Additionally, a color conversion panel (3000) according to one embodiment includes a second color filter (321G) located between a second substrate (310) and a second color conversion layer (330G). The second color filter (321G) can increase the color purity of the light emitted from the second color conversion layer (330G) by blocking light that is transmitted to the second substrate (310) without being color converted in the second color conversion layer (330G).

[0145] Additionally, a color conversion panel (3000) according to one embodiment includes a third color filter (321B) located between a second substrate (310) and a transmission layer (330B). The third color filter (321B) transmits blue light emitted from the display panel (1000) and passing through the transmission layer (330B), and can absorb light of the remaining wavelengths. The color purity of the light emitted in the area overlapping with the transmission layer (330B) can be increased.

[0146] According to one embodiment, the first color filter (321R) may be a red color filter, the second color filter (321G) may be a green color filter, and the third color filter (321B) may be a blue color filter.

[0147] A blocking region (BA) is located between the red light emission region (R), the green light emission region (G), and the blue light emission region (B). At least two of the aforementioned first color filter (321R), second color filter (321G), and third color filter (321B) may overlap in the blocking region (BA).

[0148] The first color filter (321R) located in the blocking area (BA) may be connected to the first color filter (321R) located in the red light emission area (R), or it may be separated from the first color filter (321R) located in the red light emission area (R) but in the form of an island formed in the same process. Similarly, the second color filter (321G) located in the blocking area (BA) may be connected to the second color filter (321G) located in the green light emission area (G), or it may be separated from the second color filter (321G) located in the green light emission area (G) but in the form of an island formed in the same process. Similarly, the third color filter (321B) located in the blocking area (BA) may be connected to the third color filter (321B) located in the blue light emission area (B), or it may be separated from the third color filter (321B) located in the blue light emission area (B) but formed in the same process. A color conversion panel (3000) according to one embodiment can provide a light-blocking area by overlapping a plurality of color filters without a separate light-blocking member.

[0149] Referring to FIG. 9, a display panel (1000) according to one embodiment may include a buffer layer (111) located directly above a first substrate (110) and a semiconductor layer (131) located directly above the buffer layer (111), unlike the embodiment of FIG. 1. The components other than these are the same as those in FIG. 1.

[0150] Referring to FIG. 10, a display panel (1000) according to one embodiment may include a buffer layer (111) located directly above a first substrate (110) and a semiconductor layer (131) located directly above the buffer layer (111). The components other than these are the same as those in FIG. 2.

[0151] Referring to FIG. 11, a display panel (1000) according to one embodiment may include a buffer layer (111) located directly above a first substrate (110) and a semiconductor layer (131) located directly above the buffer layer (111). The components other than these are the same as those in FIG. 3.

[0152] Referring to FIG. 12, a display panel (1000) according to one embodiment may include a buffer layer (111) located directly above a first substrate (110) and a semiconductor layer (131) located directly above the buffer layer (111). The components other than these are the same as those in FIG. 4.

[0153] Referring to FIG. 13, a display panel (1000) according to one embodiment may include a buffer layer (111) located directly above a first substrate (110) and a semiconductor layer (131) located directly above the buffer layer (111). The components other than these are the same as those in FIG. 5.

[0154] Hereinafter, a method for manufacturing a display device according to one embodiment will be described with reference to FIGS. 14 to 19. FIG. 14 is a schematic flowchart of a method for manufacturing a display device according to one embodiment, and FIGS. 15, 16, 17, 18, and 19 are each schematic cross-sectional views of a display device according to the method of manufacturing.

[0155] First, referring to FIG. 14 and FIG. 15, a transistor (Tr) is formed on a first substrate (110), and a protective layer (181, 182) is formed on the transistor (Tr). Although the present specification illustrates a protective layer (181, 182) formed in a double-layer structure, it is not limited thereto and may be provided in a single-layer structure. At this time, the protective layer (182) may include a concave portion (182R, 182G, 182B) that overlaps with each light-emitting element.

[0156] The protective layer (182) can be manufactured in any way to have concave portions (182R, 182G, 182B), but, for example, it can be manufactured using a halftone mask, a slit mask, etc.

[0157] Referring to FIGS. 14 and 16, a pixel electrode (191) is formed on the second protective layer (182). The pixel electrode (191) may be formed in a concave shape along the concave portions (182R, 182G, 182B).

[0158] Then, as shown in FIGS. 14 and 17, a partition (261) including an opening is formed. The partition (261) can define a light-emitting region while overlapping with the pixel electrode (191). The partition (261) may include an organic material such as polyacrylates resin or polyimides resin, or a silica-based inorganic material.

[0159] Subsequently, a light-emitting layer (260) is formed on the opening, and a common electrode (270) is formed on the front surface of the first substrate (110) to provide a light-emitting element (LD) as shown in FIG. 1. At this time, both the light-emitting layer (260) and the common electrode (270) may have a concave shape like the pixel electrode (191).

[0160] Then, an encapsulation layer (400) can be formed on the light-emitting element (LD) to provide a display panel (1000) as shown in FIG. 1.

[0161] Referring to FIGS. 14 and 18, a first color filter (321R), a second color filter (321G), and a third color filter (321B) are patterned on a second substrate (310), and a first insulating layer (325) is formed overlapping the front surface of the second substrate (310). Subsequently, a partition (340) is formed to define the area where the color conversion layer and the transparent layer are formed. The partition (340) according to one embodiment may have liquid-repellent properties.

[0162] Referring to FIGS. 14 and 19, a first color-changing layer (330R), a second color-changing layer (330G), and a transparent layer (330B) can be formed in an area partitioned by a partition wall (340) using an inkjet method. When forming the first color-changing layer (330R), the second color-changing layer (330G), and the transparent layer (330B) using an inkjet method, the discharge liquid for forming the first color-changing layer (330R), the second color-changing layer (330G), and the transparent layer (330B) can be introduced into the interior of the partition wall (340) rather than the upper surface of the partition wall (340) by means of the liquid-repellent partition wall (340). The first color-changing layer (330R), the second color-changing layer (330G), and the transparent layer (330B) can be formed in a concave shape due to this liquid-repellent property.

[0163] Subsequently, a second insulating layer (350) can be formed on the first color conversion layer (330R), the second color conversion layer (330G), and the transparent layer (330B) to provide a color conversion panel (3000) as illustrated in FIG. 1. The second insulating layer (350) covers and protects the first color conversion layer (330R), the second color conversion layer (330G), and the transparent layer (330B), thereby preventing the components of the filling layer injected when the color conversion panel (3000) is attached to the display panel (1000) from flowing into the first color conversion layer (330R), the second color conversion layer (330G), and the transparent layer (330B). The second insulating layer (350) can also be formed in a concave shape along the first color conversion layer (330R), the second color conversion layer (330G), and the transparent layer (330B).

[0164] Subsequently, a filling layer (4000) is filled between the display panel (1000) and the color conversion panel (3000) to form a display device. During the process of bonding the display panel (1000) and the color conversion panel (3000), foreign substances may be introduced into the filling layer (4000) or the encapsulation layer (400). If the foreign substances are introduced into the color conversion layer (330R, 330G), the transmission layer (330B), or the light-emitting element (LD), the reliability of the display device may be reduced. However, as the color conversion layer (330R, 330G), the transmission layer (330B), and the light-emitting element (LD) each have a concave shape toward the substrate, the filling layer and the encapsulation layer filling them may have a convex shape. In other words, even if foreign substances are introduced, the light-emitting region is located within a relatively thick packing layer and encapsulation layer, so damage to the light-emitting element or color conversion layer (and transmission layer) can be prevented.

[0165] Hereinafter, a display device according to a comparative example will be described with reference to FIGS. 20 and FIGS. 21. FIG. 20 is a cross-sectional view of a display device according to a comparative example, and FIG. 21 is an image of a display device according to a comparative example.

[0166] First, referring to FIG. 20, a display panel (1000) according to a comparative example has a pixel electrode (191) having a flat surface, a light-emitting layer (260), and a common electrode (270). Accordingly, it includes a light-emitting element (LD) that emits light from a flat surface.

[0167] Additionally, the color conversion panel (3000) according to the comparative example includes a first color conversion layer (330R) having a substantially flat surface. Although the present specification illustrates an embodiment in which the first color conversion layer (330R) has a flat surface, it is obvious that the second color conversion layer (330G) and the transmission layer (330B) may also have flat surfaces.

[0168] At this time, during the process of bonding the display panel (1000) and the color conversion panel (3000), foreign substances are likely to enter between the display panel (1000) and the color conversion panel (3000). At this time, if the foreign substances that have entered the filling layer (4000) or the encapsulation layer (400) overlap with the light-emitting element (LD) or the color conversion layer (330R), a defect occurs.

[0169] As shown in FIG. 21, foreign substance (A) may be introduced between the encapsulation layer (400) and the color conversion layer (330), causing defects in the color conversion layer, or foreign substance (A) may be introduced into the encapsulation layer (400) itself, causing defects in the light-emitting element.

[0170] However, according to one embodiment of the present invention, by providing a thick encapsulation layer overlapping the light-emitting element or a thick filling layer overlapping the color conversion layer and the transparent layer, defects in the light-emitting element, the color conversion layer, and the transparent layer can be prevented even if foreign substances are introduced.

[0171] Although embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements by those skilled in the art using the basic concept of the present invention as defined in the following claims also fall within the scope of the present invention. Explanation of the symbols

[0172] 1000: Display panel 3000: Color conversion panel 110: First substrate 310: Second substrate Tr: Transistor LD: Light-emitting diode 181, 182: Protective layer 182R, 182G, 182B: First depression 330R, 330G: Color conversion layer 330B: Transmissive layer 400: Bag layer 4000: Filling layer

Claims

Claim 1 A display device comprising a display panel and a color conversion panel overlapping with the display panel, wherein the display panel comprises a transistor located on a first substrate and a light-emitting element electrically connected to the transistor, and the color conversion panel comprises a first color conversion layer, a second color conversion layer, and a transmission layer located between a second substrate and the display panel, a first color filter located between the second substrate and the first color conversion layer, a second color filter located between the second substrate and the second color conversion layer, and a third color filter located between the second substrate and the transmission layer, wherein at least one of the first color conversion layer, the second color conversion layer, and the transmission layer comprises a concave portion facing the second substrate, and the first color filter, the second color filter, and the third color filter have a flat upper surface, and the thickness of at least one of the first color conversion layer, the second color conversion layer, and the transmission layer decreases from the side to the center. Claim 2 In claim 1, the display panel comprises an encapsulation layer located on the light-emitting element, and the encapsulation layer has a flat upper surface. Claim 3 A display device according to claim 2, comprising a protective layer located between the transistor and the light-emitting element and including a first concave portion, wherein the encapsulation layer includes a convex portion facing the first concave portion, and the encapsulation layer includes at least two regions having different thicknesses. Claim 4 A display device according to claim 3, further comprising a filling layer located between the display panel and the color conversion panel. Claim 5 delete Claim 6 A display device according to claim 4, wherein the concave portion is a second concave portion, the filling layer fills the second concave portion, and the filling layer includes two or more regions having different thicknesses. Claim 7 In paragraph 6, a display device in which the first concave portion and the second concave portion overlap. Claim 8 A display device according to claim 3, wherein the first concave portion comprises a first-1 concave portion overlapping with the first color conversion layer and a first-2 concave portion overlapping with the transmission layer, wherein the curvature of the first-1 concave portion and the first-2 concave portion are the same, and the area of ​​the first-1 concave portion is larger than the area of ​​the first-2 concave portion. Claim 9 In paragraph 3, the first concave portion comprises a first-1 concave portion overlapping with the first color conversion layer and a first-2 concave portion overlapping with the transmission layer, and the curvature of the first-1 concave portion is greater than the curvature of the first-2 concave portion. Claim 10 A display device according to claim 1, wherein the planar area of ​​the first color conversion layer is larger than the planar area of ​​the transparent layer. Claim 11 A display device comprising a display panel and a color conversion panel overlapping with the display panel, wherein the display panel comprises a transistor located on a first substrate and a light-emitting element electrically connected to the transistor, and the color conversion panel comprises a first color conversion layer, a second color conversion layer, and a transmission layer located between a second substrate and the display panel, a first color filter located between the second substrate and the first color conversion layer, a second color filter located between the second substrate and the second color conversion layer, and a third color filter located between the second substrate and the transmission layer, wherein each of the first color conversion layer, the second color conversion layer, and the transmission layer comprises a concave portion facing the second substrate, and the first color filter, the second color filter, and the third color filter have a flat upper surface. Claim 12 In paragraph 11, the light-emitting element is a display device having a flat surface. Claim 13 In claim 11, the display panel is positioned between the transistor and the light-emitting element and includes a protective layer comprising a first concave portion, and the concave portion comprising the first color conversion layer, the second color conversion layer, and the transparent layer is a second concave portion, in a display device. Claim 14 In paragraph 13, the light-emitting element is located on the first concave portion and is a display device having a concave shape. Claim 15 In claim 14, the display panel comprises an encapsulation layer positioned on the light-emitting element, and the encapsulation layer has a flat upper surface. Claim 16 A display device according to claim 15, wherein the sealing layer comprises a convex portion corresponding to the first concave portion, and the sealing layer comprises at least two regions having different thicknesses. Claim 17 A display device according to claim 11, further comprising a filling layer located between the display panel and the color conversion panel. Claim 18 In claim 17, the filling layer fills the concave portion, and the filling layer comprises two or more regions having different thicknesses, forming a display device. Claim 19 A display device according to claim 13, wherein the first concave portion comprises a first-1 concave portion overlapping with the first color conversion layer and a first-2 concave portion overlapping with the transmission layer, wherein the curvature of the first-1 concave portion and the first-2 concave portion are the same, and the area of ​​the first-1 concave portion is larger than the area of ​​the first-2 concave portion. Claim 20 In claim 13, the first concave portion comprises a first-1 concave portion overlapping with the first color conversion layer and a first-2 concave portion overlapping with the transmission layer, and the curvature of the first-1 concave portion is greater than the curvature of the first-2 concave portion.

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