Display device and method of manufacturing display device

Abstract

A display device according to the present invention comprises a circuit layer and a device layer disposed on the circuit layer, the device layer comprising a light-emitting element, a light-receiving element, and a device defining film separating the light-emitting element and the light-receiving element. The light-emitting element comprises a pixel anode electrode electrically connected to the circuit layer, a pixel hole injection layer disposed on the pixel anode electrode, a light-emitting layer disposed on the pixel hole injection layer, and a pixel cathode electrode disposed on the light-emitting layer. The light-receiving element comprises a sensing anode electrode electrically connected to the circuit layer, a sensing hole injection layer disposed on the sensing anode electrode, a photoelectric conversion layer disposed on the sensing hole injection layer, and a sensing cathode electrode disposed on the photoelectric conversion layer. The pixel hole injection layer and the sensing hole injection layer are electrically insulated from each other, and the pixel cathode electrode and the sensing cathode electrode are electrically connected to each other.

Description

Technology Field

[0001] The present invention relates to a display device and a method for manufacturing a display device, and more specifically, to a display device capable of improving the sensing accuracy of biometric information and improving display quality. Background Technology

[0002] Various display devices used in multimedia devices such as televisions, mobile phones, tablet computers, navigation systems, and game consoles are being developed, and as the fields of application for display devices become more diverse, the types of display panels for displaying images on display devices are also becoming more diverse. Display panels include light-emitting display panels, and light-emitting display panels may include organic light-emitting display panels, inorganic light-emitting display panels, or quantum dot light-emitting display panels.

[0003] Display devices provide various functions that enable organic communication with the user, such as displaying images to provide information or detecting user input. Recent display devices also include functions to detect the user's biometric information. The problem to be solved

[0004] The present invention aims to provide a display device capable of improving the sensing accuracy of biometric information by preventing the occurrence of noise during the process of sensing biometric information.

[0005] In addition, the present invention aims to provide a method for manufacturing the above-described display device. means of solving the problem

[0006] A display device according to one embodiment of the present invention comprises a circuit layer and a device layer disposed on the circuit layer, the device layer comprising a light-emitting element, a light-receiving element, and a device defining film separating the light-emitting element and the light-receiving element. The light-emitting element includes a pixel anode electrode electrically connected to the circuit layer, a pixel hole injection layer disposed on the pixel anode electrode, a light-emitting layer disposed on the pixel hole injection layer, and a pixel cathode electrode disposed on the light-emitting layer. The light-receiving element includes a sensing anode electrode electrically connected to the circuit layer, a sensing hole injection layer disposed on the sensing anode electrode, a photoelectric conversion layer disposed on the sensing hole injection layer, and a sensing cathode electrode disposed on the photoelectric conversion layer. The pixel hole injection layer and the sensing hole injection layer are electrically insulated from each other, and the pixel cathode electrode and the sensing cathode electrode are electrically connected to each other.

[0007] In one embodiment of the present invention, the circuit layer is electrically connected to the light-emitting element and includes a pixel driving circuit that controls the operation of the light-emitting element. The circuit layer is electrically connected to the light-receiving element and includes a sensing driving circuit that controls the operation of the light-receiving element.

[0008] In one embodiment of the present invention, the light-emitting element and the light-receiving element are disposed on the same layer.

[0009] In one embodiment of the present invention, the element defining film comprises a lower surface facing the circuit layer, an upper surface facing the lower surface, and a side surface connecting the lower surface and the upper surface.

[0010] In one embodiment of the present invention, a portion of the pixel cathode electrode and a portion of the sensing cathode electrode overlap with the upper surface and the side surface. Each of the pixel hole injection layer and the sensing hole injection layer does not overlap with the upper surface.

[0011] In one embodiment of the present invention, a portion of the pixel hole injection layer and a portion of the sensing hole injection layer are disposed on the side.

[0012] In one embodiment of the present invention, the pixel hole injection layer and the sensing hole injection layer each do not overlap with the lower surface of the definition film.

[0013] In one embodiment of the present invention, the pixel hole injection layer and the sensing hole injection layer each do not come into contact with the lower surface of the definition film.

[0014] In one embodiment of the present invention, the light-emitting element further includes a pixel hole transport layer disposed between the pixel hole injection layer and the light-emitting layer. The light-receiving element further includes a sensing hole transport layer disposed between the sensing hole injection layer and the photoelectric conversion layer.

[0015] In one embodiment of the present invention, the pixel hole transport layer and the sensing hole transport layer are electrically insulated from each other.

[0016] In one embodiment of the present invention, the pixel hole transport layer and the sensing hole transport layer are electrically connected to each other.

[0017] In one embodiment of the present invention, the light-emitting element further includes a pixel electron transport layer disposed between the light-emitting layer and the pixel cathode electrode. The light-receiving element further includes a sensing electron transport layer disposed between the photoelectric conversion layer and the sensing cathode electrode. The pixel electron transport layer and the sensing electron transport layer are electrically connected to each other.

[0018] In one embodiment of the present invention, the light-emitting element further includes a pixel electron injection layer disposed between the pixel electron transport layer and the pixel cathode electrode. The light-receiving element further includes a sensing electron injection layer disposed between the photoelectric conversion layer and the sensing cathode electrode. The pixel electron transport layer and the sensing electron transport layer are electrically connected to each other.

[0019] In one embodiment of the present invention, the absolute value of the work function of the pixel hole injection layer is greater than the absolute value of the work function of the pixel anode electrode. The absolute value of the work function of the sensing hole injection layer is greater than the absolute value of the work function of the sensing anode electrode. Each of the pixel hole injection layer and the sensing hole injection layer comprises a metal oxide.

[0020] In one embodiment of the present invention, the pixel hole injection layer and the sensing hole injection layer each comprise tungsten oxide.

[0021] In one embodiment of the present invention, the pixel hole injection layer and the sensing hole injection layer each comprise molybdenum oxide.

[0022] A method for manufacturing a display device according to an embodiment of the present invention comprises the steps of: placing a circuit layer on a base layer; and placing a device layer on the circuit layer, the device layer comprising a light-emitting element, a light-receiving element, and a device defining film separating the light-emitting element and the light-receiving element. The step of placing the device layer comprises the steps of placing a pixel anode electrode and a sensing anode electrode on the circuit layer; and placing the device defining film on the pixel anode electrode, the sensing anode electrode, and the circuit layer. The step of placing the device layer comprises the step of placing a common injection layer on the pixel anode electrode, the sensing anode electrode, and the device defining film. The step of placing the device layer comprises the step of etching the common injection layer to form a pixel hole injection layer placed on the pixel anode electrode and a sensing hole injection layer placed on the sensing anode electrode. The step of arranging the above-mentioned device layers includes the steps of arranging a light-emitting layer on the pixel hole injection layer and arranging a photoelectric conversion layer on the sensing hole injection layer, and arranging a pixel cathode electrode on the light-emitting layer and arranging a sensing cathode electrode on the photoelectric conversion layer.

[0023] In one embodiment of the present invention, the step of forming the pixel hole injection layer and the sensing hole injection layer includes the step of forming a photoresist on the common injection layer and the step of exposing the photoresist using a patterned mask. The step of forming the pixel hole injection layer and the sensing hole injection layer includes the step of developing the exposed photoresist to expose a portion of the common injection layer. The step of forming the pixel hole injection layer and the sensing hole injection layer includes the step of etching the exposed common injection layer among the common injection layers to form the pixel hole injection layer and the sensing hole injection layer.

[0024] In one embodiment of the present invention, the exposed common injection layer overlaps with the element definition film.

[0025] In one embodiment of the present invention, the pixel hole injection layer and the sensing hole injection layer are electrically insulated from each other. The pixel cathode electrode and the sensing cathode electrode are electrically connected to each other. Effects of the invention

[0026] The display device of the present invention includes a pixel hole injection layer and a sensing hole injection layer that are electrically insulated from each other. Through the present invention, when measuring biometric information through a light receiving element, leakage current from the pixel hole injection layer can be prevented. Accordingly, the sensing accuracy of biometric information of the display device can be improved.

[0027] In addition, the manufacturing method of the display device of the present invention forms a pixel hole injection layer and a sensing hole injection layer after forming a pixel anode electrode, a sensing anode electrode, and a device defining film. Through the present invention, damage to the formed pixel hole injection layer and the sensing hole injection layer by subsequent processes can be prevented. Accordingly, the sensing accuracy and display quality of biometric information of the display device can be improved. Brief explanation of the drawing

[0028] FIG. 1 is a perspective view of a display device according to one embodiment of the present invention. FIG. 2 is a cross-sectional view of a display device according to one embodiment of the present invention. FIG. 3 is a block diagram of a display device according to one embodiment of the present invention. FIG. 4 is a plan view showing an enlarged portion of a display panel according to one embodiment of the present invention. FIG. 5 is a circuit diagram showing a pixel and a light receiving sensor of a display panel according to one embodiment of the present invention. FIG. 6 is a cross-sectional view of a display device cut along the cutting line I-I' shown in FIG. 4. FIGS. 7a to 7c are enlarged cross-sectional views of the display panel in the AA` area shown in FIG. 6. FIG. 8a is a flowchart for explaining a method for manufacturing a display device according to one embodiment of the present invention. FIG. 8b is a flowchart illustrating the steps of forming a pixel hole injection layer and a sensing hole injection layer according to an embodiment of the present invention. FIGS. 9a to 9f are cross-sectional views illustrating the steps of forming a pixel hole injection layer and a sensing hole injection layer according to an embodiment of the present invention. Specific details for implementing the invention

[0029] In this specification, where a component (or region, layer, part, etc.) is described as being “on,” “connected,” or “joined” another component, it means that it may be directly placed / connected / joined on the other component, or that a third component may be placed between them.

[0030] Identical reference numerals denote identical components. Additionally, in the drawings, the thicknesses, proportions, and dimensions of components are exaggerated for the effective illustration of the technical content. “And / or” includes all one or more combinations that the associated components may define.

[0031] Terms such as "first," "second," etc., may be used to describe various components, but said components should not be limited by said terms. These terms are used solely for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be named the second component, and similarly, the second component may be named the first component. A singular expression includes a plural expression unless the context clearly indicates otherwise.

[0032] Additionally, terms such as “below,” “lower,” “on,” and “upper” are used to describe the relationships between the components depicted in the drawings. These terms are relative concepts and are described based on the directions indicated in the drawings.

[0033] Terms such as "include" or "have" are intended to specify the existence of the features, numbers, steps, actions, components, parts, or combinations thereof described in the specification, and should be understood as not precluding the existence or addition of one or more other features, numbers, steps, actions, components, parts, or combinations thereof.

[0034] Unless otherwise defined, all terms used herein (including technical and scientific terms) have the same meaning as generally understood by those skilled in the art to which the present invention pertains. Furthermore, terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and should not be interpreted in an overly ideal or overly formal sense unless explicitly defined herein.

[0035] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0036] FIG. 1 is a perspective view of a display device according to one embodiment of the present invention, and FIG. 2 is a cross-sectional view of a display device according to one embodiment of the present invention.

[0037] Referring to FIG. 1, the display device (DD) may be a device that is activated according to an electrical signal. FIG. 1 illustrates, by way of example, that the display device (DD) is a smartphone. However, the present invention is not limited thereto, and the display device (DD) may be a large display device such as a television or monitor, as well as a small or medium-sized display device such as a tablet, laptop, car navigation system, or game console. These are merely examples, and it is understood that the display device (DD) can be implemented as a different type of display device without departing from the concept of the present invention.

[0038] The display device (DD) has a long side in the first direction (DR1) and a short side in the second direction (DR2) intersecting the first direction (DR1), and has a square shape with rounded vertices. However, the shape of the display device (DD) is not limited thereto, and a display device (DD) of various shapes (e.g., a circular shape) may be provided. The display device (DD) may display an image (IM) toward the third direction (DR3) on a display surface (IS) parallel to each of the first direction (DR1) and the second direction (DR2). The display surface (IS) on which the image (IM) is displayed may correspond to the front surface of the display device (DD). In this specification, the meaning of "when viewed in a plane" may refer to the state viewed from the third direction (DR3).

[0039] In this embodiment, the front (or top) and back (or bottom) surfaces of each member are defined based on the direction in which the image (IM) is displayed. The front and back surfaces are opposed to each other in a third direction (DR3), and the normal direction of each of the front and back surfaces may be parallel to the third direction (DR3).

[0040] The distance between the front and back surfaces in the third direction (DR3) may correspond to the thickness of the display device (DD) in the third direction (DR3). Meanwhile, the directions indicated by the first to third directions (DR1, DR2, DR3) can be converted to other directions as relative concepts.

[0041] The display surface (IS) of the display device (DD) can be divided into a transparent area (TA) and a bezel area (BZA). The transparent area (TA) may be an area where an image (IM) is displayed. The user perceives the image (IM) through the transparent area (TA). In this embodiment, the transparent area (TA) is depicted as a square shape with rounded vertices. However, this is illustrated as an example, and the transparent area (TA) may have various shapes and is not limited to any one embodiment.

[0042] The bezel area (BZA) is adjacent to the transparent area (TA). The bezel area (BZA) may have a predetermined color. The bezel area (BZA) may surround the transparent area (TA). Accordingly, the shape of the transparent area (TA) may be substantially defined by the bezel area (BZA). However, this is illustrated as an example, and the bezel area (BZA) may be positioned adjacent to only one side of the transparent area (TA) or may be omitted. A display device (DD) according to one embodiment of the present invention may include various embodiments and is not limited to any one embodiment.

[0043] The display device (DD) can detect external input applied from the outside. The external input may include various forms of input provided from outside the display device (DD). For example, the external input may be any one of various forms of external input, such as a part of the user's body (US) such as the user's hand, light, heat, or pressure, or a combination thereof. In this embodiment, the part of the user's body is described as a touch input by the user's hand applied to the front, but this is exemplary, and as described above, the part of the user's body may be provided in various forms. Additionally, the display device (DD) may detect input from the user (US) applied to the side or back of the display device (DD) depending on the structure of the display device (DD), and is not limited to any one embodiment.

[0044] The display device (DD) can detect biometric information of a user authorized from the outside. A biometric information detection area capable of detecting the user's biometric information may be provided on the display surface (IS) of the display device (DD). The biometric information detection area may be provided in the entire area of ​​the transparent area (TA) or in a part of the transparent area (TA). FIG. 1 illustrates an example of the present invention in which the entire transparent area (TA) is utilized as a biometric information detection area.

[0045] Referring to FIGS. 1 and 2, the display device (DD) may include a window (WM), a display module (DM), and a housing (EDC). In this embodiment, the window (WM) and the housing (EDC) are combined to form the exterior of the display device (DD).

[0046] The front surface of the window (WM) defines the display surface (IS) of the display device (DD). The window (WM) may be made of a transparent material capable of emitting an image (IM). The window (WM) may include an optically transparent insulating material. For example, the window (WM) may include glass or plastic. The window (WM) may have a multilayer structure or a single layer structure. For example, the window (WM) may include a plurality of plastic films bonded by an adhesive, or a glass substrate and a plastic film bonded by an adhesive.

[0047] The display module (DM) may include a display panel (DP) and an input sensing layer (ISL). The display panel (DP) displays an image (IM) according to an electrical signal, and the input sensing layer (ISL) can detect an external input applied from the outside. The external input may be provided in various forms.

[0048] A display panel (DP) according to one embodiment of the present invention may be a light-emitting display panel and is not particularly limited. For example, the display panel (DP) may be an organic light-emitting display panel, an inorganic light-emitting display panel, or a quantum dot light-emitting display panel. The light-emitting layer of an organic light-emitting display panel may include an organic light-emitting material, and the light-emitting layer of an inorganic light-emitting display panel may include an inorganic light-emitting material. The light-emitting layer of a quantum dot light-emitting display panel may include quantum dots and quantum rods, etc. Hereinafter, the display panel (DP) is described as an organic light-emitting display panel.

[0049] The display panel (DP) includes a base layer (BL), a circuit layer (DP_CL), a device layer (DP_ED), and an encapsulation layer (TFE). The display panel (DP) according to the present invention may be a flexible display panel. However, the present invention is not limited thereto. For example, the display panel (DP) may be a foldable display panel or a rigid display panel that folds along a folding axis.

[0050] The base layer (BL) may include a synthetic resin layer. The synthetic resin layer may be a polyimide-based resin layer, and the material is not particularly limited. Additionally, the base layer (BL) may include a glass substrate, a metal substrate, or an organic / inorganic composite material substrate, etc.

[0051] A circuit layer (DP_CL) is disposed between a base layer (BL) and a device layer (DP_ED). The circuit layer (DP_CL) includes at least one insulating layer and a circuit element. Hereinafter, the insulating layer included in the circuit layer (DP_CL) is referred to as an intermediate insulating layer. The intermediate insulating layer includes at least one intermediate inorganic film and at least one intermediate organic film. The circuit element may include a pixel driving circuit (PDC, see FIG. 5) included in each of a plurality of pixels (PX, see FIG. 3) for displaying an image (IM), and a sensing driving circuit (SDC, see FIG. 5) included in each of a plurality of light receiving sensors (FX, see FIG. 3) for recognizing external information. The external information may be biometric information of a user (US). As an example of the present invention, the light receiving sensors (FX) may be a fingerprint recognition sensor, a proximity sensor, an iris recognition sensor, etc. Additionally, the light receiving sensor may be an optical sensor that recognizes biometric information in an optical manner. As an example of the present invention, the circuit layer (DP_CL) may further include signal lines connected to a pixel driving circuit and / or a sensing driving circuit.

[0052] The device layer (DP_ED) may include a light-emitting element (ED, see FIG. 5) included in each of the pixels (PX) and a light-receiving element (OPD, see FIG. 5) included in each of the light-receiving sensors (FX). In one example of the present invention, the light-receiving element may be a photodiode. The light-receiving element may be a sensor that responds to light reflected by the body of the user (US) or light transmitted through the body of the user (US). In one example of the present invention, the light-emitting element (ED) and the light-receiving element (OPD) are disposed on the same layer. Specifically, the light-emitting element (ED) and the light-receiving element (OPD) may each be disposed on the circuit layer (DP_CL). The circuit layer (DP_CL) and the device layer (DP_ED) will be described in detail later with reference to FIG. 5 and FIG. 6.

[0053] The encapsulation layer (TFE) seals the device layer (DP_ED). The encapsulation layer (TFE) may include at least one organic film and at least one inorganic film. The inorganic film may include an inorganic material and can protect the device layer (DP_ED) from moisture / oxygen. The inorganic film may include, but is not particularly limited to, a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer. The organic layer may include an organic material and can protect the device layer (DP_ED) from foreign substances such as dust particles.

[0054] An input sensing layer (ISL) may be formed on a display panel (DP). The input sensing layer (ISL) may be placed directly on an encapsulation layer (TFE). According to one embodiment of the present invention, the input sensing layer (ISL) may be formed on the display panel (DP) by a continuous process. That is, when the input sensing layer (ISL) is placed directly on the display panel (DP), an adhesive film is not placed between the input sensing layer (ISL) and the encapsulation layer (TFE). Alternatively, an adhesive film may be placed between the input sensing layer (ISL) and the display panel (DP). In this case, the input sensing layer (ISL) is not manufactured by a continuous process with the display panel (DP), but is manufactured through a separate process from the display panel (DP) and then fixed to the upper surface of the display panel (DP) by an adhesive film.

[0055] The input sensing layer (ISL) can detect an external input (e.g., a touch by a user (US)), convert it into a predetermined input signal, and provide the input signal to a display panel (DP). The input sensing layer (ISL) may include a plurality of sensing electrodes for detecting external input. The sensing electrodes can detect external input in a capacitive manner. The display panel (DP) receives the input signal from the input sensing layer (ISL) and can generate an image corresponding to the input signal.

[0056] The display module (DM) may further include a color filter layer (CFL). In one example of the present invention, the color filter layer (CFL) may be disposed on an input sensing layer (ISL). However, the present invention is not limited thereto. The color filter layer (CFL) may also be disposed between the display panel (DP) and the input sensing layer (ISL). The color filter layer (CFL) may include a plurality of color filters and a black matrix.

[0057] A display device (DD) according to one embodiment of the present invention may further include an adhesive layer (AL). A window (WM) may be attached to an input sensing layer (ISL) by the adhesive layer (AL). The adhesive layer (AL) may include an optically clear adhesive, an optically clear adhesive resin, or a pressure-sensitive adhesive (PSA).

[0058] The housing (EDC) can be combined with the window (WM) to define the appearance of the display device (DD). The housing (EDC) is combined with the window (WM) to provide a certain internal space. The display module (DM) can be accommodated in the internal space. The housing (EDC) may include a material having relatively high rigidity. For example, the housing (EDC) may include glass, plastic, or metal, or may include a plurality of frames and / or plates composed of a combination thereof. The housing (EDC) can reliably protect the components of the display device (DD) accommodated in the internal space from external impact. Although not illustrated, a battery module or the like that supplies power necessary for the overall operation of the display device (DD) may be placed between the display module (DM) and the housing (EDC).

[0059] FIG. 3 is a block diagram of a display device according to one embodiment of the present invention.

[0060] Referring to FIG. 3, the display device (DD) includes a display panel (DP) and a control module (MCP). In one example of the present invention, the control module (MCP) includes a display controller (DCP), a source drive block (SDB), a gate drive block (GDB), an emitting light drive block (EDB), a voltage generation block (VGB), and a read-out block (ROB).

[0061] The control module (MCP) controls the operation of the display panel (DP). Specifically, the display controller (DCP) included in the control module (MCP) receives an image signal (RGB) and an external control signal (CTRL). The display controller (DCP) generates an image data signal (IMD) by converting the data format of the image signal (RGB) to match the interface specifications with the source drive block (SDB). Based on the external control signal (CTRL), the display controller (DCP) generates a gate drive signal (SCS), a source drive signal (DCS), an emission control signal (ECS), and a lead control signal (RCS).

[0062] The source drive block (SDB) receives a source drive signal (DCS) and an image data signal (IMD) from the display controller (DCP). The source drive block (SDB) converts the image data signal (IMD) into data signals and outputs the data signals to a plurality of data lines (DL1~DLm) described below. The data signals are analog voltages corresponding to the grayscale values ​​of the image data signal (IMD).

[0063] The gate drive block (GDB) receives a gate drive signal (SCS) from the display controller (DCP). In response to the gate drive signal (SCS), the gate drive block (GDB) can output scan signals to a plurality of scan lines described below.

[0064] The voltage generation block (VGB) generates voltages required for the operation of the display panel (DP). In this embodiment, the voltage generation block (VGB) generates a first driving voltage (ELVDD), a second driving voltage (ELVSS), a first initialization voltage (VINT1), and a second initialization voltage (VINT2). In one example of the present invention, the voltage generation block (VGB) may operate under the control of a display controller (DCP). In one example of the present invention, the voltage level of the first driving voltage (ELVDD) is greater than the voltage level of the second driving voltage (ELVSS). The voltage levels of the first and second initialization voltages (VINT1, VINT2) are smaller than the voltage level of the second driving voltage (ELVSS). However, the present invention is not limited thereto, and depending on the shape of the display device (DD) and the display panel (DP), the relationship between the voltage levels and magnitudes of the first driving voltage (ELVDD), the second driving voltage (ELVSS), and the first and second initialization voltages (VINT1, VINT2) generated by the voltage generation block (VGB) may vary.

[0065] The display panel (DP) may include a display area (DA) corresponding to a transparent area (TA, see FIG. 1) and a non-display area (NDA) corresponding to a bezel area (BZA, see FIG. 1).

[0066] A display panel (DP) may include a plurality of pixels (PX) disposed in a display area (DA) and a plurality of light receiving sensors (FX) disposed in the display area (DA). In one example of the present invention, each of the plurality of light receiving sensors (FX) may be disposed between two adjacent pixels (PX). The plurality of pixels (PX) and the plurality of light receiving sensors (FX) may be disposed alternately in a first and second direction (DR1, DR2). However, the present invention is not limited thereto. That is, among the plurality of light receiving sensors (FX), two or more pixels (PX) may be disposed between two adjacent light receiving sensors (FX) in the first direction (DR1), or two or more pixels (PX) may be disposed between two adjacent light receiving sensors (FX) in the second direction (DR2).

[0067] The display panel (DP) further includes a plurality of initialization scan lines (SIL1~SILn), a plurality of compensation scan lines (SCL1~SCLn), a plurality of write scan lines (SWL1~SWLn), a plurality of black scan lines (BSL1~BSLn), a plurality of light emission control lines (EML1~EMLn), a plurality of data lines (DL1~DLm), and a plurality of detection lines (RL1~RLh). The initialization scan lines (SIL1~SILn), compensation scan lines (SCL1~SCLn), write scan lines (SWL1~SWLn), black scan lines (BSL1~BSLn), and light emission control lines (EML1~EMLn) extend in a second direction (DR2). The initialization scan lines (SIL1~SILn), compensation scan lines (SCL1~SCLn), write scan lines (SWL1~SWLn), black scan lines (BSL1~BSLn), and light emission control lines (EML1~EMLn) are arranged spaced apart from each other in a first direction (DR1). The data lines (DL1~DLm) and detection lines (RL1~RLh) extend in the first direction (DR1) and are arranged spaced apart from each other in a second direction (DR2).

[0068] Multiple pixels (PX) are each electrically connected to initialization scan lines (SIL1–SILn), compensation scan lines (SCL1–SCLn), write scan lines (SWL1–SWLn), black scan lines (BSL1–BSLn), light emission control lines (EML1–EMLn), and data lines (DL1–DLm). For example, each of the multiple pixels (PX) may be electrically connected to four scan lines. However, the number of scan lines connected to each pixel (PX) is not limited to this and may be changed.

[0069] A plurality of light receiving sensors (FX) are electrically connected to compensation scan lines (SCL1~SCLn), write scan lines (SWL1~SWLn), and sensing lines (RL1~RLh), respectively. However, the present invention is not limited thereto. The number of lines connected to each light receiving sensor (FX) may vary. In one example of the present invention, the number of sensing lines (RL1~RLh) may correspond to half the number of data lines (DL1~DLm). However, the present invention is not limited thereto. Alternatively, the number of sensing lines (RL1~RLh) may correspond to one-fourth or one-eighth, etc., of the number of data lines (DL1~DLm).

[0070] A gate drive block (GDB) may be placed in the non-display area (NDA) of a display panel (DP). The gate drive block (GDB) receives a gate drive signal (SCS) from a display controller (DCP). In response to the gate drive signal (SCS), the gate drive block (GDB) outputs initial scan signals to initial scan lines (SIL1~SILn) and outputs compensation scan signals to compensation scan lines (SCL1~SCLn). As an example of the present invention, the gate drive block (GDB) may sequentially supply initial scan signals to the initial scan lines (SIL1~SILn) and sequentially supply compensation scan signals to the compensation scan lines (SCL1~SCLn). Additionally, in response to the gate drive signal (SCS), the gate drive block (GDB) may output write scan signals to the write scan lines (SWL1~SWLn) and output black scan signals to the black scan lines (BSL1~BSLn). As an example of the present invention, a gate driving block (GDB) can sequentially supply write scan signals to write scan lines (SWL1~SWLn) and sequentially supply black scan signals to black scan lines (BSL1~BSLn).

[0071] Alternatively, the gate drive block (GDB) may include a first and a second gate drive block. The first gate drive block may output initialization scan signals and compensation scan signals, and the second gate drive block may output write scan signals and black scan signals.

[0072] The light driving block (EDB) may be placed in the non-display area (NDA) of the display panel (DP). The light driving block (EDB) receives a light control signal (ECS) from the display controller (DCP). In response to the light control signal (ECS), the light driving block (EDB) may output light control signals to the light control lines (EML1–EMLn). Alternatively, a gate driving block (GDB) may be connected to the light control lines (EML1–EMLn). In this case, the light driving block (EDB) is omitted, and the gate driving block (GDB) may output light control signals to the light control lines (EML1–EMLn).

[0073] The Read Out Block (ROB) receives a Read Control Signal (RCS) from the Display Controller (DCP). In response to the Read Control Signal (RCS), the Read Out Block (ROB) can receive a detection signal from the detection lines (RL1 to RLh). The Read Out Block (ROB) provides the received detection signal to the Display Controller (DCP). The Display Controller (DCP) calculates the biometric information of the user (US) based on the detection signal. Specifically, the Display Controller (DCP) identifies the type of biometric information of the user (US) to be measured based on the Set Signal (STS), and calculates the identified biometric information of the user (US) based on the received detection signal.

[0074] FIG. 4 is a plan view showing an enlarged portion of a display panel according to one embodiment of the present invention.

[0075] Referring to FIGS. 3 and 4, the display panel (DP) includes a plurality of pixels (PX) and a plurality of light receiving sensors (FX).

[0076] A plurality of pixels (PX) may be grouped into a plurality of repeating reference pixel units (RPUs). In one example of the present invention, each reference pixel unit (RPU) may include four pixels, namely a first pixel (hereinafter, red pixel), two second pixels (hereinafter, first and second green pixels), and a third pixel (hereinafter, blue pixel). However, the number of pixels included in each reference pixel unit (RPU) is not limited thereto. Alternatively, each reference pixel unit (RPU) may include three pixels, namely a red pixel, a first green pixel (or a second green pixel), and a blue pixel.

[0077] A red pixel includes a first light-emitting element (ED_R) (hereinafter, red light-emitting element), and the first and second green pixels each include a second light-emitting element (ED_G1, ED_G2) (hereinafter, first and second green light-emitting elements), and a blue pixel includes a third light-emitting element (ED_B) (hereinafter, blue light-emitting element). In one example of the present invention, the red light-emitting element (ED_R) outputs a first color light (e.g., red light), the first and second green light-emitting elements (ED_G1, ED_G2) output a second color light (e.g., green light), and the blue light-emitting element (ED_B) outputs a third color light (e.g., blue light).

[0078] In the first and second directions (DR1, DR2), red light-emitting elements (ED_R) and blue light-emitting elements (ED_B) may be arranged alternately. The first and second green light-emitting elements (ED_G1, ED_G2) may be arranged in the same row. Each of the first and second green light-emitting elements (ED_G1, ED_G2) may be arranged along the first direction (DR1). The first and second green light-emitting elements (ED_G1, ED_G2) may be arranged in different columns. Each of the first and second green light-emitting elements (ED_G1, ED_G2) may be arranged alternately along the second direction (DR2). The first and second green light-emitting elements (ED_G1, ED_G2) may be placed in different rows and different columns from the red light-emitting elements (ED_R) and blue light-emitting elements (ED_B) on the first and second directions (DR1, DR2).

[0079] In one example of the present invention, the red light-emitting element (ED_R) may have a larger size than the first and second green light-emitting elements (ED_G1, ED_G2). Additionally, the blue light-emitting element (ED_B) may have a size larger than or equal to that of the red light-emitting element (ED_R). The size of each of the light-emitting elements (ED_R, ED_G1, ED_G2, ED_B) is not limited thereto and can be applied with various modifications. For example, in another embodiment of the present invention, the light-emitting elements (ED_R, ED_G1, ED_G2, ED_B) may have the same size as each other.

[0080] The first and second green light-emitting elements (ED_G1, ED_G2) may have the same shape as the red and blue light-emitting elements (ED_R, ED_B). As an example of the present invention, each of the red and blue light-emitting elements (ED_R, ED_B) may have an octagonal shape with the same length in the first direction (DR1) and the second direction (DR2). That is, the red and blue light-emitting elements (ED_R, ED_B) may have the same or different sizes, but have the same shape.

[0081] Each of the first and second green light-emitting elements (ED_G1, ED_G2) may have an octagonal shape with equal lengths in the first direction (DR1) and the second direction (DR2). In one example of the present invention, the first and second green light-emitting elements (ED_G1, ED_G2) have the same size and the same shape. However, the shapes of the light-emitting elements (ED_R, ED_G1, ED_G2, ED_B) are not limited thereto. The shapes of each of the light-emitting elements (ED_R, ED_G1, ED_G2, ED_B) may be varied in many ways. In one example of the present invention, each of the light-emitting elements (ED_R, ED_G1, ED_G2, ED_B) may have a circular shape, a rectangular shape, a diamond shape, etc.

[0082] A plurality of light receiving sensors (FX) may be grouped into a plurality of repeating reference pixel units (RPUs). In one example of the present invention, each reference pixel unit (RPU) may include two light receiving sensors, namely a first light receiving sensor and a second light receiving sensor. However, the number of light receiving sensors included in each reference pixel unit (RPU) is not limited thereto. Alternatively, each reference pixel unit (RPU) may include one light receiving sensor or three or more light receiving sensors.

[0083] The first light receiving sensor includes a first light receiving element (OPD1), and the second light receiving sensor includes a second light receiving element (OPD2). Each of the first and second light receiving elements (OPD1, OPD2) is positioned between a red light emitting element (ED_R) and a blue light emitting element (ED_B) in the second direction (DR2). Each of the first and second light receiving elements (OPD1, OPD2) may be positioned adjacent to a first green light emitting element (ED_G1) or a second green light emitting element (ED_G2) in the first direction (DR1). In one example of the present invention, the first light receiving element (OPD1) is positioned between two adjacent first green light emitting elements (ED_G1) in the first direction (DR1). The second light receiving element (OPD2) is positioned between two adjacent second green light emitting elements (ED_G2) in the first direction (DR1).

[0084] Each of the first and second light-receiving elements (OPD1, OPD2) may have the same size and the same shape. Each of the first and second light-receiving elements (OPD1, OPD2) may have a smaller size than the red and blue light-emitting elements (ED_R, ED_B). As an example of the present invention, each of the first and second light-receiving elements (OPD1, OPD2) may have a size equal to or similar to the first and second green light-emitting elements (ED_G1, ED_G2). However, the size of each of the first and second light-receiving elements (OPD1, OPD2) is not particularly limited and can be applied with various modifications. Each of the first and second light-receiving elements (OPD1, OPD2) may have a different shape from the red and blue light-emitting elements (ED_R, ED_B). As an example of the present invention, each of the first and second light-receiving elements (OPD1, OPD2) may have a rectangular shape. Each of the first and second light-receiving elements (OPD1, OPD2) may have a rectangular shape that is longer in the first direction (DR1) than in the second direction (DR2). Alternatively, each of the first and second light-receiving elements (OPD1, OPD2) may have a square shape that is equal in length in the first direction (DR1) and the second direction (DR2).

[0085] FIG. 5 is a circuit diagram showing a pixel and a light receiving sensor of a display panel according to one embodiment of the present invention.

[0086] FIG. 5 illustrates, by way of example, an equivalent circuit diagram of one (PX) of the plurality of pixels (PX) shown in FIG. 3. Since each of the plurality of pixels (PX) has the same circuit structure, a detailed description of the remaining pixels is omitted in the description of the circuit structure for the pixel (PX).

[0087] Additionally, FIG. 5 illustrates an exemplary equivalent circuit diagram of one of the plurality of light receiving sensors (FX) shown in FIG. 3. Since each of the plurality of light receiving sensors (FX) has the same circuit structure, a detailed description of the remaining pixels is omitted in the description of the circuit structure for the light receiving sensor (FX).

[0088] Referring to FIG. 5, a pixel (PX) is connected to the i-th data line (DLi) among the data lines (DL1~DLm), the j-th initial scan line (SILj) among the initial scan lines (SIL1~SILn), the j-th compensation scan line (SCLj) among the compensation scan lines (SCL1~SCLn), the j-th write scan line (SWLj) among the write scan lines (SWL1~SWLn), the j-th black scan line (BSLj) among the black scan lines (BSL1~BSLn), and the j-th light emission control line (EMLj) among the light emission control lines (EML1~EMLn).

[0089] A pixel (PX) includes a light-emitting element (ED) and a pixel driving circuit (PDC). The light-emitting element (ED) may be a light-emitting diode. In one example of the present invention, the light-emitting element (ED) may be an organic light-emitting diode comprising an organic light-emitting layer. The pixel driving circuit (PDC) is electrically connected to the light-emitting element (ED) and controls the operation of the light-emitting element (ED).

[0090] The pixel driving circuit (PDC) includes first to seventh transistors (T1, T2, T3, T4, T5, T6, T7) and one capacitor (Cst). At least one of the first to seventh transistors (T1, T2, T3, T4, T5, T6, T7) may be a transistor having a low-temperature polycrystalline silicon (LTPS) semiconductor layer. At least one of the first to seventh transistors (T1, T2, T3, T4, T5, T6, T7) may be a transistor having an oxide semiconductor layer. Some of the first to seventh transistors (T1, T2, T3, T4, T5, T6, T7) may be P-type transistors, and some of the remaining parts may be N-type transistors. For example, the first, second, fifth, sixth, and seventh transistors (T1, T2, T5, T6, T7) may be PMOS transistors, and the third and fourth transistors (T3, T4) may be NMOS transistors. For example, the third and fourth transistors (T3, T4) may be oxide semiconductor transistors, and the first, second, fifth, sixth, and seventh transistors (T1, T2, T5, T6, T7) may be low-temperature polysilicon semiconductor transistors.

[0091] The configuration of the pixel driving circuit (PDC) according to the present invention is not limited to the embodiment shown in FIG. 5. The pixel driving circuit (PDC) shown in FIG. 5 is merely one example, and the configuration of the pixel driving circuit (PDC) can be modified. For example, all of the first to seventh transistors (T1, T2, T3, T4, T5, T6, T7) may be P-type transistors or N-type transistors.

[0092] The j-th initialization scan line (SILj), the j-th compensation scan line (SCLj), the j-th write scan line (SWLj), the j-th black scan line (BSLj), and the j-th light emission control line (EMLj) can each transmit the j-th initialization scan signal (SIj), the j-th compensation scan signal (SCj), the j-th write scan signal (SWj), the j-th black scan signal (BSj), and the j-th light emission control signal (EMj) to the pixel (PX). The i-th data line (DLi) transmits the i-th data signal (DSi) to the pixel (PX). The i-th data signal (DSi) may have a voltage level corresponding to an image signal (RGB, see FIG. 3) input to a display device (DD, see FIG. 3).

[0093] Each of the first and second driving voltage lines (VL1, VL2) can transmit the first driving voltage (ELVDD) and the second driving voltage (ELVSS) to the pixel (PX). Additionally, the first and second initialization voltage lines (VL3, VL4) can transmit the first initialization voltage (VINT1) and the second initialization voltage (VINT2) to the pixel (PX), respectively.

[0094] The first transistor (T1) is connected between a first driving voltage line (VL1) that receives a first driving voltage (ELVDD) and a light-emitting element (ED). The first transistor (T1) includes a first electrode connected to the first driving voltage line (VL1) via the sixth transistor (T6), a second electrode connected to the pixel anode electrode (P_AN) of the light-emitting element (ED) via the seventh transistor (T7), and a third electrode connected to one end of a capacitor (Cst) (e.g., one end connected to the first node (ND1). The first transistor (T1) can receive the i-th data signal (DSi) transmitted by the i-th data line (DLi) according to the switching operation of the second transistor (T2) and supply a driving current (Id) to the light-emitting element (ED).

[0095] The second transistor (T2) is connected between the data line (DLi) and the first electrode of the first transistor (T1). The second transistor (T2) includes a first electrode connected to the data line (DLi), a second electrode connected to the first electrode of the first transistor (T1), and a third electrode connected to the j-th write scan line (SWLj). The second transistor (T2) is turned on according to the write scan signal (SWj) received through the j-th write scan line (SWLj) and can transmit the i-th data signal (DSi) transmitted from the i-th data line (DLi) to the first electrode of the first transistor (T1).

[0096] The third transistor (T3) is connected between the second electrode of the first transistor (T1) and the first node (ND1). The third transistor (T3) includes a first electrode connected to the third electrode of the first transistor (T1), a second electrode connected to the second electrode of the first transistor (T1), and a third electrode connected to the j-th compensation scan line (SCLj). The third transistor (T3) is turned on according to the j-th compensation scan signal (SCj) received through the j-th compensation scan line (SCLj) to connect the third electrode and the second electrode of the first transistor (T1) to each other, thereby allowing the first transistor (T1) to be diode-connected.

[0097] The fourth transistor (T4) is connected between the first initialization voltage line (VL3), to which the first initialization voltage (VINT1) is applied, and the first node (ND1). The fourth transistor (T4) includes a first electrode connected to the first initialization voltage line (VL3), a second electrode connected to the first node (ND1), and a third electrode connected to the j-th initialization scan line (SILj). The fourth transistor (T4) is turned on according to the j-th initialization scan signal (SIj) received through the j-th initialization scan line (SILj). The turned-on fourth transistor (T4) transmits the first initialization voltage (VINT1) to the first node (ND1) to initialize the potential of the third electrode of the first transistor (T1) (i.e., the potential of the first node (ND1)).

[0098] The sixth transistor (T6) includes a first electrode connected to the first driving voltage line (VL1), a second electrode connected to the first electrode of the first transistor (T1), and a third electrode connected to the j-th light emission control line (EMLj).

[0099] The seventh transistor (T7) includes a first electrode connected to the second electrode of the first transistor (T1), a second electrode connected to the anode electrode (P_AN) of the light-emitting element (ED), and a third electrode connected to the j-th light-emitting control line (EMLj).

[0100] The 6th and 7th transistors (T6, T7) are turned on simultaneously according to the j-th light emission control signal (EMj) received through the j-th light emission control line (EMLj). The first driving voltage (ELVDD) applied through the turned-on 6th transistor (T6) can be delivered to the light-emitting element (ED) after being compensated through the diode-connected 1st transistor (T1).

[0101] The fifth transistor (T5) includes a first electrode connected to a second initialization voltage line (VL4) to which a second initialization voltage (VINT2) is transmitted, a second electrode connected to the second electrode of the seventh transistor (T7), and a third electrode connected to a black scan line (BSLj). The second initialization voltage (VINT2) may have a voltage level lower than or equal to the first initialization voltage (VINT1).

[0102] One end of the capacitor (Cst) is connected to the third electrode of the first transistor (T1) as described above, and the other end is connected to the first driving voltage line (VL1).

[0103] The pixel cathode electrode (P_CA) of the light-emitting element (ED) can be connected to a second driving voltage line (VL2) that transmits a second driving voltage (ELVSS). The second driving voltage (ELVSS) may have a lower voltage level than the first driving voltage (ELVDD). In one example of the present invention, the second driving voltage (ELVSS) may have a lower voltage level than the first and second initialization voltages (VINT1, VINT2).

[0104] In one example of the present invention, within a driving frame of a display panel (DP, see FIG. 3), the j-th light emission control signal (EMj) includes a light emission period and a non-light emission period. The j-th light emission control signal (EMj) has a high level during the non-light emission period. During the non-light emission period, the j-th initialization scan signal (SIj) is activated. During the activation period of the j-th initialization scan signal (SIj) (hereinafter, the first activation period), if a high-level j-th initialization scan signal (SIj) is provided through the j-th initialization scan line (SILj), the fourth transistor (T4) is turned on in response to the high-level j-th initialization scan signal (SIj). The first initialization voltage (VINT1) is transmitted to the third electrode of the first transistor (T1) through the turned-on fourth transistor (T4), and the first node (ND1) is initialized with the first initialization voltage (VINT1). Accordingly, the first activation period can be defined as the initialization period of the pixel (PX).

[0105] Next, the j-th compensation scan signal (SCj) is activated, and during the activation period of the j-th compensation scan signal (SCj) (hereinafter referred to as the second activation period), when a high-level j-th compensation scan signal (SCj) is supplied through the j-th compensation scan line (SCLj), the third transistor (T3) is turned on. The first transistor (T1) is diode-connected by the turned-on third transistor (T3) and is forward-biased. The first activation period may not overlap with the second activation period.

[0106] During the second activation period, the j-th write scan signal (SWj) is activated. The j-th write scan signal (SWj) has a low level during the activation period (hereinafter referred to as the fourth activation period). During the fourth activation period, the second transistor (T2) is turned on by the low-level j-th write scan signal (SWj). Then, a compensation voltage ("DSi-Vth"), which is reduced by the threshold voltage (Vth) of the first transistor (T1) from the i-th data signal (DSi) supplied from the i-th data line (DLi), is applied to the third electrode of the first transistor (T1). That is, the potential of the third electrode of the first transistor (T1) can be the compensation voltage ("DSi-Vth"). The fourth activation period may overlap with the second activation period. The duration of the second activation period may be longer than the duration of the fourth activation period.

[0107] A first driving voltage (ELVDD) and a compensation voltage ("DSi-Vth") are applied to both ends of the capacitor (Cst), and a charge corresponding to the voltage difference between the ends can be stored in the capacitor (Cst). Here, the high-level interval of the j-th compensation scan signal (SCj) can be referred to as the compensation interval of the pixel (PX).

[0108] Meanwhile, the j-th black scan signal (BSj) is activated within the second activation period of the j-th compensation scan signal (SCj). The j-th black scan signal (BSj) has a low level during the activation period (hereinafter referred to as the third activation period). During the third activation period, the fifth transistor (T5) is turned on by receiving the low-level j-th black scan signal (BSj) through the j-th black scan line (BSLj). A portion of the driving current (Id) can be discharged through the fifth transistor (T5) as a bypass current (Ibp) by the fifth transistor (T5). The third activation period may overlap with the second activation period. The duration of the second activation period may be longer than the duration of the third activation period. The third activation period may precede the fourth activation period and may not overlap with the fourth activation period.

[0109] When a pixel (PX) displays a black image, if the light-emitting element (ED) emits light even though the minimum driving current of the first transistor (T1) flows as the driving current (Id), the pixel (PX) cannot display a black image normally. Therefore, the fifth transistor (T5) according to one embodiment of the present invention can distribute a portion of the minimum driving current of the first transistor (T1) as a bypass current (Ibp) to a current path other than the current path to the light-emitting element (ED). Here, the minimum driving current of the first transistor (T1) refers to the leakage current flowing to the first transistor (T1) under the condition that the gate-source voltage (Vgs) of the first transistor (T1) is smaller than the threshold voltage (Vth) and the first transistor (T1) is turned off. Under this condition of turning off the first transistor (T1), the minimum driving current flowing to the first transistor (T1) (e.g., a current of 10 pA or less) is delivered to the light-emitting element (ED), thereby displaying a black gradation image. When the pixel (PX) displays a black image, the influence of the bypass current (Ibp) on the minimum driving current is relatively large, whereas when displaying an image such as a normal image or a white image, the influence of the bypass current (Ibp) on the driving current (Id) is almost negligible. Therefore, when displaying a black image, a current (i.e., light-emitting current (Ied)) reduced by the amount of the bypass current (Ibp) that exits from the driving current (Id) through the fifth transistor (T5) is supplied to the light-emitting element (ED), thereby clearly expressing the black image. Accordingly, the pixel (PX) can implement an accurate black gradation image using the fifth transistor (T5), and as a result, the contrast ratio can be improved.

[0110] Next, the j-th light emission control signal (EMj) supplied from the j-th light emission control line (EMLj) is changed from a high level to a low level. The 6th and 7th transistors (T6, T7) are each turned on by the low-level light emission control signal (EMj). Then, a driving current (Id) is generated according to the voltage difference between the voltage of the 3rd electrode of the 1st transistor (T1) and the 1st driving voltage (ELVDD), and the driving current (Id) is supplied to the light-emitting element (ED) through the 7th transistor (T7), causing current (Ied) to flow in the light-emitting element (ED).

[0111] Referring again to FIG. 5, the light receiving sensor (FX) is connected to the d-th detection line (RLd), the j-th writing scan line (SWLj), and the sensing control line (CL) among the detection lines (RL1~RLh).

[0112] The light receiving sensor (FX) includes a light receiving element (OPD) and a sensing driving circuit (SDC). The light receiving element (OPD) may be a photodiode. In one example of the present invention, the light receiving element (OPD) may be an organic photodiode comprising an organic material as a photoelectric conversion layer. The anode electrode (O_AN, hereinafter the sensing anode electrode) of the light receiving element (OPD) is connected to a first sensing node (SN1), and the cathode electrode (O_CA, hereinafter the sensing cathode electrode) of the light receiving element (OPD) may be connected to a second driving voltage line (VL2) that transmits a second driving voltage (ELVSS). The sensing driving circuit (SDC) is electrically connected to the light receiving element (OPD) and controls the operation of the light receiving element (OPD).

[0113] The sensing driving circuit (SDC) includes three transistors (ST1 to ST3). The three transistors (ST1 to ST3) may each be a reset transistor (ST1), an amplifier transistor (ST2), and an output transistor (ST3). At least one of the reset transistor (ST1), the amplifier transistor (ST2), and the output transistor (ST3) may be an oxide semiconductor transistor. In one example of the present invention, the reset transistor (ST1) may be an oxide semiconductor transistor, and the amplifier transistor (ST2) and the output transistor (ST3) may be LTPS transistors. However, this is not limited thereto, and at least the reset transistor (ST1) and the output transistor (ST3) may be oxide semiconductor transistors, and the amplifier transistor (ST2) may be an LTPS transistor.

[0114] Additionally, some of the reset transistor (ST1), amplifier transistor (ST2), and output transistor (ST3) may be P-type transistors, and some may be N-type transistors. In one example of the present invention, the amplifier transistor (ST2) and the output transistor (ST3) may be P-type transistors, and the reset transistor (ST1) may be an N-type transistor. However, it is not limited thereto, and the reset transistor (ST1), amplifier transistor (ST2), and output transistor (ST3) may all be N-type transistors or all be P-type transistors.

[0115] Some of the reset transistor (ST1), amplifier transistor (ST2), and output transistor (ST3) (for example, the reset transistor (ST1) may be a transistor of the same type as the third and fourth transistors (T3, T4) of the pixel (PX). The amplifier transistor (ST2) and output transistor (ST3) may be transistors of the same type as the first, second, fifth, sixth, and seventh transistors (T1, T2, T5, T6, T7) of the pixel (PX).

[0116] The circuit configuration of the sensing driving circuit (SDC) according to the present invention is not limited to FIG. 5. The sensing driving circuit (SDC) shown in FIG. 5 is merely an example, and the configuration of the sensing driving circuit (SDC) can be modified and implemented.

[0117] A reset transistor (ST1) includes a first electrode connected to a reset receiving line (VL5) that receives a reset voltage (RST), a second electrode connected to a first sensing node (SN1), and a third electrode connected to a sensing control line (CL) that receives a sensing control signal (CS). The reset transistor (ST1) can reset the potential of the first sensing node (SN1) to the reset voltage (RST) in response to the sensing control signal (CS). In one example of the present invention, the sensing control signal (CS) may be a j-th compensation scan signal (SCj) supplied from a j-th compensation scan line (SCLj). In this case, the sensing control line (CL) may be electrically connected to the j-th compensation scan line (SCLj). That is, the reset transistor (ST1) may receive the j-th compensation scan signal (SCj) supplied from the j-th compensation scan line (SCLj) as the sensing control signal (CS). However, the present invention is not limited thereto. The sensing control line (CL) may be a line electrically isolated from the scan lines (SWLj, SCLj, SILj, SBLj). Alternatively, the sensing control signal (CS) may be a signal distinct from the j-th compensation scan signal (SCj). The timing at which the sensing control signal (CS) is activated and the time at which the j-th compensation scan signal (SCj) is activated may differ.

[0118] In one example of the present invention, the reset voltage (RST) may be a DC voltage maintained at a voltage level lower than the second driving voltage (ELVSS). However, the present invention is not limited thereto. The reset voltage (RST) may have a voltage level lower than the second driving voltage (ELVSS) at least during the activation period of the sensing control signal (CS). In one example of the present invention, the voltage generation block (VGB, see FIG. 3) may generate the reset voltage (RST) as a voltage equal to either one of the first and second initialization voltages (VINT1, VINT2).

[0119] The reset transistor (ST1) may include a plurality of sub-reset transistors connected in series. For example, the reset transistor (ST1) may include two sub-reset transistors (hereinafter referred to as the first and second sub-reset transistors). In this case, the third electrode of the first sub-reset transistor and the third electrode of the second sub-reset transistor are connected to a sensing control line (CL). Additionally, the second electrode of the first sub-reset transistor and the first electrode of the second sub-reset transistor may be electrically connected to each other. Furthermore, a reset voltage (RST) is applied to the first electrode of the first sub-reset transistor, and the second electrode of the second sub-reset transistor may be electrically connected to the first sensing node (SN1). However, the number of sub-reset transistors is not limited thereto and can be varied in many ways.

[0120] The amplifying transistor (ST2) includes a first electrode connected to a sensing driving line (SVL) that receives a sensing driving voltage (SVD), a second electrode connected to a second sensing node (SN2), and a third electrode connected to a first sensing node (SN1). The amplifying transistor (ST2) can be turned on according to the potential of the first sensing node (SN1) to apply the sensing driving voltage (SVD) to the second sensing node (SN2). In one example of the present invention, the sensing driving voltage (SVD) may be one of a first driving voltage (ELVDD) and first and second initialization voltages (VINT1, VINT2). When the sensing driving voltage (SVD) is the first driving voltage (ELVDD), the sensing driving line (SVL) may be electrically connected to the first driving voltage line (VL1). When the sensing driving voltage (SVD) is the first initialization voltage (VINT1), the sensing driving line (SVL) can be electrically connected to the first initialization voltage line (VL3), and when the sensing driving voltage (SVD) is the second initialization voltage (VINT2), the sensing driving line (SVL) can be electrically connected to the second initialization voltage line (VL4).

[0121] The output transistor (ST3) includes a first electrode connected to the second sensing node (SN2), a second electrode connected to the d-th sensing line (RLd), and a third electrode connected to an output control line that receives an output control signal. The output transistor (ST3) can transmit the d-th sensing signal (FSd) to the d-th sensing line (RLd) in response to the output control signal. The output control signal may be the j-th write scan signal (SWj) supplied through the j-th write scan line (SWLj). That is, the output transistor (ST3) can receive the j-th write scan signal (SWj) supplied from the j-th write scan line (SWLj) as an output control signal.

[0122] The light receiving element (OPD) of the light receiving sensor (FX) may be exposed to light emitted from the light emitting element (ED). In one example of the present invention, the light receiving element (OPD) generates photocharges corresponding to the light received, and the generated photocharges may be accumulated in the first sensing node (SN1). Specifically, when the hand of a user (US, see FIG. 1) touches the display surface (IS, see FIG. 1) of a display device (DD, see FIG. 1), and the light emitting element (ED) emits light, the light receiving element (OPD) receives the light reflected by the user's (US) hand among the light emitted by the light emitting element (ED), and generates photocharges corresponding to the received reflected light.

[0123] When the output transistor (ST3) is turned on, the d-th detection signal (FSd), which flows from the sensing driving line (SVL) through the amplification transistor (ST2) and the output transistor (ST3) to the d-th detection line (RLd), is determined by the charge amount of the first sensing node (SN1). In one example of the present invention, if the output transistor (ST3) is a P-type transistor, the magnitude of the d-th detection signal (FSd) can be reduced as the amount of photocharge generated by the photodetector (OPD) and accumulated in the first sensing node (SN1) increases.

[0124] FIG. 6 is a cross-sectional view of a display device cut along the cutting line I-I' shown in FIG. 4.

[0125] Referring to FIG. 6, the display panel (DP) may include a base layer (BL), a circuit layer (DP_CL) disposed on the base layer (BL), a device layer (DP_ED), and an encapsulation layer (TFE).

[0126] The base layer (BL) may include a synthetic resin layer. The synthetic resin layer may include a thermosetting resin. In particular, the synthetic resin layer may be a polyimide-based resin layer, and the material thereof is not particularly limited. The synthetic resin layer may include at least one of an acrylic resin, a methacrylate resin, a polyisoprene, a vinyl resin, an epoxy resin, a urethane resin, a cellulose resin, a siloxane resin, a polyamide resin, and a perylene resin. In addition, the base layer may include a glass substrate, a metal substrate, or an organic / inorganic composite material substrate, etc.

[0127] A circuit layer (DP_CL) is disposed on a buffer layer (BFL). In one example of the present invention, the circuit layer (DP_CL) includes a pixel driving circuit (PDC) and a sensing driving circuit (SDC) as illustrated in FIG. 5. In one example of the present invention, FIG. 6 illustrates some components of the pixel driving circuit (PDC) included in the circuit layer (DP_CL), namely a green pixel transistor (G_TR) and a red pixel transistor (R_TR). In one example of the present invention, the green pixel transistor (G_TR) is electrically connected to a green light-emitting element (ED_G) included in the device layer (DP_ED). The red pixel transistor (R_TR) is electrically connected to a red light-emitting element (ED_R) included in the device layer (DP_ED). In one example of the present invention, the green pixel transistor (G_TR) may be a transistor corresponding to the seventh transistor (T7, see FIG. 5) of the pixel driving circuit (PDC) included in the green pixel. The red pixel transistor (R_TR) may be a transistor corresponding to the seventh transistor (T7) of the pixel driving circuit (PDC) included in the red pixel. However, the present invention is not limited thereto, and the transistors corresponding to the green pixel transistor (G_TR) and the red pixel transistor (R_TR) in the pixel driving circuit (PDC) may vary depending on the circuit configuration of the green pixel and the red pixel, respectively.

[0128] In addition, as an example of the present invention, FIG. 6 illustrates a part of the sensing driving circuit (SDC) included in the circuit layer (DP_CL), namely, a sensor transistor (O_TR). As an example of the present invention, the sensor transistor (O_TR) may be a transistor corresponding to the reset transistor (ST1) of the sensing driving circuit (SDC). However, the present invention is not limited thereto, and depending on the circuit configuration of the light receiving sensor, the transistor corresponding to the sensor transistor (O_TR) in the sensing driving circuit (SDC) may vary.

[0129] A device layer (DP_ED) is disposed on a circuit layer (DP_CL). In one example of the present invention, the device layer (DP_ED) includes a light-emitting element (ED, see FIG. 5), a light-receiving element (OPD), and a device defining film (PDL). In one example of the present invention, FIG. 6 shows a green light-emitting element (ED_G) and a red light-emitting element (ED_R), which are some of the light-emitting elements. Since the green light-emitting element (ED_G), the red light-emitting element (ED_R), and the blue light-emitting element (not shown) included in the light-emitting elements each have the same pixel structure, the description of the blue light-emitting element is omitted in the description of the green light-emitting element (ED_G) and the red light-emitting element (ED_R).

[0130] In one example of the present invention, a light-emitting element (ED) comprises a pixel anode electrode (P_AN, see FIG. 5), a pixel hole assist layer, a light-emitting layer, a pixel electron assist layer, and a pixel cathode electrode (P_CA). The light-emitting element (ED) comprises a green light-emitting element (ED_G) and a red light-emitting element (ED_R).

[0131] The green light-emitting device (ED_G) comprises a green anode electrode (G_AN), a green hole assist layer (G_HCl), a green light-emitting layer (G_EL), a green electron assist layer (G_ECL), and a green cathode electrode (G_CA). The red light-emitting device (ED_R) comprises a red anode electrode (R_AN), a red hole assist layer (R_HCl), a red light-emitting layer (R_EL), a red electron assist layer (R_ECL), and a red cathode electrode (R_CA).

[0132] In one example of the present invention, a photodetector (OPD) comprises a sensing anode electrode (O_AN), a sensing hole auxiliary layer (O_HCl), a photoelectric conversion layer (PCL), a sensing electron auxiliary layer (O_ECL), and a sensing cathode electrode (O_CA).

[0133] The green anode electrode (G_AN), red anode electrode (R_AN), and sensing anode electrode (O_AN) are disposed on the circuit layer (DP_CL). The green anode electrode (G_AN) may be connected to the green pixel transistor (G_TR) through a contact hole penetrating the insulating layer included in the circuit layer (DP_CL). However, the present invention is not limited thereto, and the green anode electrode (G_AN) may also be connected to a connecting electrode electrically connected to the green pixel transistor (G_TR) through a contact hole penetrating the insulating layer included in the circuit layer (DP_CL). The red anode electrode (R_AN) may be connected to the red pixel transistor (R_TR) through a contact hole penetrating the insulating layer included in the circuit layer (DP_CL). However, the present invention is not limited thereto, and the red anode electrode (R_AN) may also be connected to a connecting electrode electrically connected to the red pixel transistor (R_TR) through a contact hole penetrating the insulating layer included in the circuit layer (DP_CL). The sensing anode electrode (O_AN) may be connected to the sensor transistor (O_TR) through a contact hole penetrating the insulating layer included in the circuit layer (DP_CL). However, the present invention is not limited thereto, and the sensing anode electrode (O_AN) may also be connected to a connecting electrode electrically connected to the sensor transistor (O_TR) through a contact hole penetrating the insulating layer included in the circuit layer (DP_CL).

[0134] A device defining film (PDL) is disposed on a circuit layer (DP_CL), a green anode electrode (G_AN), a red anode electrode (R_AN), and a sensing anode electrode (O_AN). A first opening (OP1) of the device defining film (PDL) exposes at least a portion of the green anode electrode (G_AN). A second opening (OP2) of the device defining film (PDL) exposes at least a portion of the red anode electrode (R_AN). A third opening (OP3) of the device defining film (PDL) exposes at least a portion of the sensing anode electrode (O_AN).

[0135] As an example of the present invention, a plurality of pixels (PX, see FIG. 3) may be arranged on a plane of a display panel (DP, see FIG. 3) according to a certain rule. An area where a plurality of pixels (PX) are arranged may be defined as a pixel area, and a pixel area may include a light-emitting area (PXA) and a non-light-emitting area (NPXA) adjacent to the light-emitting area (PXA). The non-light-emitting area (NPXA) may surround the light-emitting area (PXA).

[0136] In one example of the present invention, the light-emitting region (PXA) may include a green light-emitting region (PXA_G) in which a green pixel is arranged, a red light-emitting region (PXA_R) in which a red pixel is arranged, and a blue light-emitting region (not shown) in which a blue pixel is arranged. In one example of the present invention, FIG. 6 illustrates the green light-emitting region (PXA_G) and the red light-emitting region (PXA_R) among the light-emitting regions (PXA). The first opening (OP1) of the device defining film (PDL) may define the green light-emitting region (PXA_G). In one example of the present invention, the second opening (OP2) of the device defining film (PDL) may define the red light-emitting region (PXA_R).

[0137] In one example of the present invention, a non-emissive region (NPXA) includes a green non-emissive region (NPXA_G) adjacent to a green emitting region (PXA_G), a red non-emissive region (NPXA_R) adjacent to a red emitting region (PXA_R), and a blue non-emissive region (not shown) adjacent to a blue emitting region. The green non-emissive region (NPXA_G) may surround the green emitting region (PXA_G). The red non-emissive region (NPXA_R) may surround the red emitting region (PXA_R). A non-pixel region (NPA) may be defined between the green, red, and blue non-emissive regions (NPXA_G, NPXA_R).

[0138] In one example of the present invention, a plurality of light receiving sensors (FX, see FIG. 3) may be arranged in a certain order on a plane of a display panel (DP, see FIG. 3). The area where the plurality of light receiving sensors (FX) are arranged may be defined as a light receiving sensing area, and a light receiving sensing area may include a sensing area (SA) and a non-sensing area (NSA) adjacent to the sensing area (SA). In one example of the present invention, a third opening (OP3) of a device defining film (PDL) may define the sensing area (SA). The non-sensing area (NSA) may surround the sensing area (SA). In one example of the present invention, a non-pixel area (NPA) may be defined between the non-sensing area (NSA) and green, red, and blue non-emissive areas (NPXA_G, NPXA_R).

[0139] In one embodiment of the present invention, the device defining film (PDL) may further include a black material. The device defining film (PDL) may further include a black organic dye / pigment such as carbon black or aniline black. The device defining film (PDL) may be formed by mixing a blue organic material and a black organic material. The device defining film (PDL) may further include a liquid-repellent organic material.

[0140] A pixel hole auxiliary layer is disposed on the pixel anode electrode (P_AN). A sensing hole auxiliary layer (O_HCl) is disposed on the sensing anode electrode (O_AN). The pixel hole auxiliary layer includes a green hole auxiliary layer (G_HCl) and a red hole auxiliary layer (R_HCl).

[0141] In one example of the present invention, a green hole assist layer (G_HCL) is disposed on a green anode electrode (G_AN). The green hole assist layer (G_HCL) may be disposed only in the region corresponding to the first opening (OP1). The green hole assist layer (G_HCL) is not disposed in the green non-emissive region (NPXA_G) and the non-pixel region (NPA).

[0142] A red hole auxiliary layer (R_HCL) is disposed on the red anode electrode (R_AN). The red hole auxiliary layer (R_HCL) may be disposed only in the region corresponding to the second aperture (OP2). The red hole auxiliary layer (R_HCL) is not disposed in the red non-emissive region (NPXA_R) and the non-pixel region (NPA).

[0143] A sensing hole auxiliary layer (O_HCL) is disposed on the sensing anode electrode (O_AN). The sensing hole auxiliary layer (O_HCL) may be disposed only in the region corresponding to the third aperture (OP3). The sensing hole auxiliary layer (O_HCL) is not disposed in the non-sensing region (NSA) and the non-pixel region (NPA).

[0144] In one example of the present invention, the green hole assist layer (G_HCl), the red hole assist layer (R_HCl), and the sensing hole assist layer (O_HCl) can be electrically insulated from each other.

[0145] A light-emitting layer is disposed on a pixel hole-assist layer. The light-emitting layer may be formed separately on each of a plurality of pixels (PX). The light-emitting layer includes a green light-emitting layer (G_EL) and a red light-emitting layer (R_EL). In one example of the present invention, a green light-emitting layer (G_EL) is disposed on a green hole-assist layer (G_HCL). The green light-emitting layer (G_EL) may be disposed only in the area corresponding to the first opening (OP1). A red light-emitting layer (R_EL) is disposed on a red hole-assist layer (R_HCL). The red light-emitting layer (R_EL) may be disposed only in the area corresponding to the second opening (OP2). Although the patterned green light-emitting layer (G_EL) and red light-emitting layer (R_EL) are illustrated as examples in this embodiment, the present invention is not limited thereto. A common light-emitting layer may be disposed commonly on a plurality of pixels (PX). In this case, the common light-emitting layer may generate white light or blue light.

[0146] A pixel electronic auxiliary layer is disposed on the light-emitting layer. The pixel electronic auxiliary layer includes a green electronic auxiliary layer (G_ECL) and a red electronic auxiliary layer (R_ECL). The green electronic auxiliary layer (G_ECL) and the red electronic auxiliary layer (R_ECL) may be disposed in common across a plurality of pixels (PX). In one example of the present invention, the green electronic auxiliary layer (G_ECL) may be disposed in a green light-emitting region (PXA_G), a green non-light-emitting region (NPXA_G), and a non-pixel region (NPA). The red electronic auxiliary layer (R_ECL) may be disposed in a red light-emitting region (PXA_R), a red non-light-emitting region (NPXA_R), and a non-pixel region (NPA). In one example of the present invention, the green electronic auxiliary layer (G_ECL) and the red electronic auxiliary layer (R_ECL) may be electrically connected to each other.

[0147] A sensing electronic auxiliary layer (O_ECL) is disposed on a photoelectric conversion layer (PCL). The sensing electronic auxiliary layer (O_ECL) may be disposed in common on a plurality of light receiving sensors (FX). In one example of the present invention, the sensing electronic auxiliary layer (O_ECL) may be disposed in a sensing region (SA) and a non-sensing region (NSA). In one example of the present invention, the green electronic auxiliary layer (G_ECL), the red electronic auxiliary layer (R_ECL), and the sensing electronic auxiliary layer (O_ECL) may be electrically connected to each other. In one example of the present invention, the green electronic auxiliary layer (G_ECL), the red electronic auxiliary layer (R_ECL), and the sensing electronic auxiliary layer (O_ECL) may be formed in common.

[0148] A pixel cathode electrode (P_CA, see FIG. 5) is disposed on a pixel electronic auxiliary layer. The pixel cathode electrode (P_CA) includes a green cathode electrode (G_CA) and a red cathode electrode (R_CA). The green cathode electrode (G_CA) and the red cathode electrode (R_CA) may be disposed in common across a plurality of pixels (PX). In one example of the present invention, the green cathode electrode (G_CA) may be disposed in a green light-emitting region (PXA_G), a green non-light-emitting region (NPXA_G), and a non-pixel region (NPA). The red cathode electrode (R_CA) may be disposed in a red light-emitting region (PXA_R), a red non-light-emitting region (NPXA_R), and a non-pixel region (NPA). In one example of the present invention, the green cathode electrode (G_CA) and the red cathode electrode (R_CA) may be electrically connected to each other.

[0149] A sensing cathode electrode (O_CA) is disposed on a sensing electronic auxiliary layer (O_ECL). The sensing cathode electrode (O_CA) may be disposed in common on a plurality of light receiving sensors (FX). In one example of the present invention, the sensing cathode electrode (O_CA) may be disposed in a sensing region (SA) and a non-sensing region (NSA). In one example of the present invention, the green cathode electrode (G_CA), the red cathode electrode (R_CA), and the sensing cathode electrode (O_CA) may be electrically connected to each other. In one example of the present invention, the green cathode electrode (G_CA), the red cathode electrode (R_CA), and the sensing cathode electrode (O_CA) may be formed in common.

[0150] An encapsulation layer (TFE) is disposed on a green cathode electrode (G_CA), a red cathode electrode (R_CA), and a sensing cathode electrode (O_CA). The encapsulation layer (TFE) can cover a plurality of pixels (PX) and a plurality of light receiving sensors (FX). In this embodiment, the encapsulation layer (TFE) directly covers the green cathode electrode (G_CA), the red cathode electrode (R_CA), and the sensing cathode electrode (O_CA). The encapsulation layer (TFE) includes at least one inorganic layer or one organic layer. In one embodiment of the present invention, the encapsulation layer (TFE) may include two inorganic layers and an organic layer disposed between them. In one embodiment of the present invention, the thin film encapsulation layer may include a plurality of alternately stacked inorganic layers (hereinafter referred to as encapsulation inorganic layers) and a plurality of organic layers (hereinafter referred to as encapsulation organic layers). The encapsulating inorganic layer protects the green and red light-emitting elements (ED_G, ED_R) and the light-receiving element (OPD) from moisture / oxygen, and the encapsulating organic layer protects the green and red light-emitting elements (ED_G, ED_R) and the light-receiving element (OPD) from foreign substances such as dust particles. The encapsulating inorganic layer may include a silicon nitride layer, a silicon oxynitride layer, a silicon oxide layer, a titanium oxide layer, or an aluminum oxide layer, but is not particularly limited thereto. The encapsulating organic layer may include an acrylic-based organic layer, but is not particularly limited thereto. In one embodiment of the present invention, the stacked structure of the green light-emitting element (ED_G), the red light-emitting element (ED_R), and the light-receiving element (OPD) may have a structure that is vertically inverted from the structure shown in FIG. 6.

[0151] The input sensing layer (ISL) may be placed directly on the encapsulation layer (TFE). The input sensing layer (ISL) includes a first conductive layer (ICL1), a first insulating layer (IIL1), a second conductive layer (ICL2), and a second insulating layer (IIL2). The first conductive layer (ICL1) may be placed on the encapsulation layer (TFE). Although FIG. 6 illustrates a structure in which the first conductive layer (ICL1) is placed directly on the encapsulation layer (TFE), the present invention is not limited thereto. The input sensing layer (ISL) may further include a base insulating layer placed between the first conductive layer (ICL1) and the encapsulation layer (TFE). In this case, the encapsulation layer (TFE) is covered by the base insulating layer, and the first conductive layer (ICL1) may be placed on the base insulating layer. As an example of the present invention, the base insulating layer may include an inorganic insulating material.

[0152] The first insulating layer (IIL1) can cover the first conductive layer (ICL1). The second conductive layer (ICL2) is disposed on the first insulating layer (IIL1). Although a structure in which the input sensing layer (ISL) includes the first and second conductive layers (ICL1, ICL2) has been illustrated, the present invention is not limited thereto. For example, the input sensing layer (ISL) may include only one of the first and second conductive layers (ICL1, ICL2).

[0153] A second insulating layer (IIL2) may be disposed on the second conductive layer (ICL2). The second insulating layer (IIL2) may include an organic insulating material. The second insulating layer (IIL2) may serve to protect the first and second conductive layers (ICL1, ICL2) from moisture / oxygen and to protect the first and second conductive layers (ICL1, ICL2) from foreign substances.

[0154] A color filter layer (CFL) may be disposed on the input sensing layer (ISL). The color filter layer (CFL) may be disposed directly on the second insulating layer (IIL2). The color filter layer (CFL) may include a first color filter (CF_R), a second color filter (CF_G), and a third color filter. The first color filter (CF_R) has a first color, the second color filter (CF_G) has a second color, and the third color filter has a third color. In one example of the present invention, the first color may be red, the second color may be green, and the third color may be blue. FIG. 6 illustrates the first color filter (CF_R) and the second color filter (CF_G), which are some of the color filters.

[0155] The color filter layer (CFL) may further include a dummy color filter (DCF). In one example of the present invention, the dummy color filter (DCF) may be positioned to correspond to a sensing area (SA). The dummy color filter (DCF) may overlap with the sensing area (SA) and the non-sensing area (NSA). In one example of the present invention, the dummy color filter (DCF) may have the same color as one of the first to third color filters (CF_R, CF_G, CF_B). In one example of the present invention, the dummy color filter (DCF) may have the same green color as the second color filter (CF_G). However, the present invention is not limited thereto. The color filter layer (CFL) may not include a dummy color filter (DCF).

[0156] The color filter layer (CFL) may further include a black matrix (BM). The black matrix (BM) may be positioned corresponding to a non-pixel area (NPA). The black matrix (BM) may be positioned to overlap with the first and second conductive layers (ICL1, ICL2) in the non-pixel area (NPA). In one example of the present invention, the black matrix (BM) may overlap with the non-pixel area (NPA) and the first to third non-emissive areas (NPXA-G, NPXA-B, NPXA-R). The black matrix (BM) may overlap with the non-sensing area (NSA) and the non-pixel area (NPA). The black matrix (BM) may not overlap with the sensing area (SA). In one example of the present invention, a portion of the first color filter (CF_R) and a portion of the second color filter (CF_G) may overlap with the black matrix (BM). Additionally, a portion of the first color filter (CF_R) and a portion of the dummy color filter (DCF) may overlap with the black matrix (BM).

[0157] The color filter layer (CFL) may further include an overcoating layer (OCL). The overcoating layer (OCL) may include an organic insulating material. The overcoating layer (OCL) may be provided with a thickness sufficient to eliminate the step difference between the first color filter (CF_R), the second color filter (CF_G), and the dummy color filter (DCF). The overcoating layer (OCL) may include any material capable of flattening the upper surface of the color filter layer (CFL) with a predetermined thickness, without being particularly limited, and may include, for example, an acrylate-based organic material.

[0158] The window (WM) can be placed on the color filter layer (CFL).

[0159] FIGS. 7a to 7c are enlarged cross-sectional views of the display panel in the AA` area shown in FIG. 6.

[0160] Referring to FIGS. 6 to 7c, FIG. 7a illustrates a circuit layer (DP_CL), a red light-emitting element (ED_R), a light-receiving element (OPD), a device defining film (PDL), and an encapsulation layer (TFE) included in a display panel (DP). Hereinafter, the same reference numerals are assigned to configurations identical to those described in FIG. 6, and descriptions are omitted.

[0161] In one example of the present invention, a device defining film (PDL) separates a red light-emitting element (ED_R) and a light-receiving element (OPD). Specifically, the red light-emitting element (ED_R) and the light-receiving element (OPD) may be spaced apart from each other in a second direction (DR2) with respect to the device defining film (PDL) and arranged on a circuit layer (DP_CL). The red light-emitting element (ED_R) and the light-receiving element (OPD) may be spaced apart in a first direction (DR1, see FIG. 1) and a second direction (DR2) on a plane parallel to the device defining film (PDL) with respect to the first direction (DR1, see FIG. 1) and the second direction (DR2) and arranged on a circuit layer (DP_CL) with respect to the device defining film (PDL).

[0162] The device defining layer (PDL) includes a bottom surface (BPS) facing the circuit layer (DP_CL), an upper surface (UPS) facing the bottom surface (BPS), and a side surface (SDS) connecting the bottom surface (BPS) and the upper surface (UPS). Specifically, the bottom surface (BPS) may be a surface in contact with the circuit layer (DP_CL). The upper surface (UPS) may be a surface in contact with the pixel electronic auxiliary layer (R_ECL) and the sensing electronic auxiliary layer (O_ECL). In one example of the present invention, the bottom surface (BPS) includes a first bottom surface (BPS_a) in contact with the red anode electrode (R_AN), a second bottom surface (BPS_b) in contact with the circuit layer (DP_CL), and a third bottom surface (BPS_c) in contact with the sensing anode electrode (O_AN). The side surface (SDS) includes a first side surface (SDS_a) connecting the first lower surface (BPS_a) and the upper surface (UPS), and a second side surface (SDS_b) connecting the third lower surface (BPS_c) and the upper surface (UPS).

[0163] Referring to FIG. 7a, the red light-emitting element (ED_R) comprises a red anode electrode (R_AN), a red hole assist layer (R_HCL), a red light-emitting layer (R_EL), a red electron assist layer (R_ECL), and a red cathode electrode (R_CA). In one example of the present invention, the red hole assist layer (R_HCL) comprises a red hole injection layer (R_HIL) and a red hole transport layer (R_HTL). In one example of the present invention, the red electron assist layer (R_ECL) comprises a red electron transport layer (R_ETL) and a red electron injection layer (R_EIL). In one example of the present invention, the absolute value of the work function of the red hole injection layer (R_HIL) is greater than the absolute value of the work function of the red anode electrode (R_AN). The absolute value of the work function of the red hole transport layer (R_HTL) is greater than the absolute value of the work function of the red hole injection layer (R_HIL). Through the red hole injection layer (R_HIL) and the red hole transport layer (R_HTL), the efficiency of hole movement from the red anode electrode (R_AN) to the red light-emitting layer (R_EL) can be increased. The absolute value of the work function of the red electron injection layer (R_EIL) is smaller than the absolute value of the work function of the red cathode electrode (R_CA). The absolute value of the work function of the red electron transport layer (R_ETL) is smaller than the absolute value of the work function of the red electron injection layer (R_EIL). The efficiency of electron movement from the red cathode electrode (R_CA) to the red light-emitting layer (R_EL) can be increased through the red electron injection layer (R_EIL) and the red electron transport layer (R_ETL).

[0164] In one example of the present invention, a red hole injection layer (R_HIL) is disposed on a red anode electrode (R_AN). A red hole transport layer (R_HTL) is disposed on the red hole injection layer (R_HIL). A red light-emitting layer (R_EL) is disposed on the red hole transport layer (R_HTL). A red electron transport layer (R_ETL) is disposed on the red light-emitting layer (R_EL). A red electron injection layer (R_EIL) is disposed on the red electron transport layer (R_ETL). A red cathode electrode (R_CA) is disposed on the red electron injection layer (R_EIL).

[0165] In one example of the present invention, a red hole injection layer (R_HIL) and a red hole transport layer (R_HTL) are disposed within a red light-emitting region (PXA_R). A portion of the red hole injection layer (R_HIL) is disposed on the red anode electrode (R_AN), and the remainder of the red hole injection layer (R_HIL) is disposed on the first side (SDS_a) of the device defining film (PDL). A portion of the red hole transport layer (R_HTL) is disposed on the red hole injection layer (R_HIL), and the remainder of the red hole transport layer (R_HTL) is disposed on the first side (SDS_a) of the device defining film (PDL). Neither the red hole injection layer (R_HIL) nor the red hole transport layer (R_HTL) is disposed on the top surface (UPS) of the device defining film (PDL). The red hole injection layer (R_HIL) and the red hole transport layer (R_HTL) each do not overlap with the first bottom surface (BPS_a) of the device defining film (PDL). In one example of the present invention, the red hole injection layer (R_HIL) and the red hole transport layer (R_HTL) do not come into contact with the first bottom surface (BPS_a) of the device defining film (PDL).

[0166] The photodetector (OPD) comprises a sensing anode electrode (O_AN), a sensing hole auxiliary layer (O_HCl), a photoelectric conversion layer (PCL), a sensing electron auxiliary layer (O_ECL), and a sensing cathode electrode (O_CA). In one example of the present invention, the sensing hole auxiliary layer (O_HCl) comprises a sensing hole injection layer (O_HIL) and a sensing hole transport layer (O_HTL). In one example of the present invention, the sensing electron auxiliary layer (O_ECL) comprises a sensing electron transport layer (O_ETL) and a sensing electron injection layer (O_EIL). In one example of the present invention, the absolute value of the work function of the sensing hole injection layer (O_HIL) is greater than the absolute value of the work function of the sensing anode electrode (O_AN). The absolute value of the work function of the sensing hole transport layer (O_HTL) is greater than the absolute value of the work function of the sensing hole injection layer (O_HIL). Through the sensing hole injection layer (O_HIL) and the sensing hole transport layer (O_HTL), the efficiency of hole movement from the sensing anode electrode (O_AN) to the photoelectric conversion layer (PCL) can be increased. The absolute value of the work function of the sensing electron injection layer (O_EIL) is smaller than the absolute value of the work function of the sensing cathode electrode (O_CA). The absolute value of the work function of the sensing electron transport layer (O_ETL) is smaller than the absolute value of the work function of the sensing electron injection layer (O_EIL). The efficiency of electron movement from the sensing cathode electrode (O_CA) to the photoelectric conversion layer (PCL) can be increased through the sensing electron injection layer (O_EIL) and the sensing electron transport layer (O_ETL).

[0167] In one example of the present invention, a sensing hole injection layer (O_HIL) and a sensing hole transport layer (O_HTL) are disposed within a sensing region (SA). A portion of the sensing hole injection layer (O_HIL) is disposed on a sensing anode electrode (O_AN), and the remainder of the sensing hole injection layer (O_HIL) is disposed on a second side (SDS_b) of a device defining film (PDL). A portion of the sensing hole transport layer (O_HTL) is disposed on the sensing hole injection layer (O_HIL), and the remainder of the sensing hole transport layer (O_HTL) is disposed on a second side (SDS_b) of a device defining film (PDL). Neither the sensing hole injection layer (O_HIL) nor the sensing hole transport layer (O_HTL) is disposed on the top surface (UPS) of the device defining film (PDL). The sensing hole injection layer (O_HIL) and the sensing hole transport layer (O_HTL) each do not overlap with the third lower surface (BPS_c) of the device defining film (PDL). In one example of the present invention, the sensing hole injection layer (O_HIL) and the sensing hole transport layer (O_HTL) do not come into contact with the third lower surface (BPS_c) of the device defining film (PDL).

[0168] In one example of the present invention, the pixel hole injection layer (R_HIL) and the sensing hole injection layer (O_HIL) are electrically insulated. The pixel hole injection layer (R_HIL) and the sensing hole injection layer (O_HIL) are spaced apart in a second direction (DR2) with respect to the device defining film (PDL). The pixel hole injection layer (R_HIL) and the sensing hole injection layer (O_HIL) are spaced apart in a first direction (DR1, see FIG. 1) and a second direction (DR2) on a plane parallel to the first direction (DR1, see FIG. 1) and the second direction (DR2) with respect to the device defining film (PDL). Accordingly, with reference to FIG. 5, it is possible to prevent unintended leakage current from flowing between the pixel anode electrode (P_AN) of the light-emitting element (ED) and the sensing anode electrode (O_AN) of the light-receiving element (OPD) through the pixel hole injection layer (R_HIL) and the sensing hole injection layer (O_HIL). Through this, the sensing accuracy of the display device (DD, see FIG. 1) that measures the biometric information of the user (US, see FIG. 1) through the light-receiving element (OPD) can be improved.

[0169] In one example of the present invention, a red electron transport layer (R_ETL) is disposed on a red emitting layer (R_EL). A sensing electron transport layer (O_ETL) is disposed on a photoelectric conversion layer (PCL). The red electron transport layer (R_ETL) and the sensing electron transport layer (O_ETL) may be electrically connected to each other. The red electron transport layer (R_ETL) and the sensing electron transport layer (O_ETL) may have an integral shape with each other. In this case, the red electron transport layer (R_ETL) and the sensing electron transport layer (O_ETL) may be disposed in a red emitting region (PXA_R), a red non-emitting region (NPXA_R), a sensing region (SA), a non-sensing region (NSA), and a non-pixel region (NPA). In one example of the present invention, a portion of the red electron transport layer (R_ETL) and a portion of the sensing electron transport layer (O_ETL) overlap with the upper surface (UPS), the first side (SDS_a), and the second side (SDS_b) of the device defining film (PDL). A portion of the red electron transport layer (R_ETL) and a portion of the sensing electron transport layer (O_ETL) are in contact with the upper surface (UPS), the first side (SDS_a), and the second side (SDS_b) of the device defining film (PDL).

[0170] In one example of the present invention, a red electron injection layer (R_EIL) is disposed on a red electron transport layer (R_ETL). A sensing electron injection layer (O_EIL) is disposed on the sensing electron transport layer (O_ETL). The red electron injection layer (R_EIL) and the sensing electron injection layer (O_EIL) may be electrically connected to each other. The red electron injection layer (R_EIL) and the sensing electron injection layer (O_EIL) may have an integral shape with each other. In this case, the red electron injection layer (R_EIL) and the sensing electron injection layer (O_EIL) may be disposed in a red emitting region (PXA_R), a red non-emitting region (NPXA_R), a sensing region (SA), a non-sensing region (NSA), and a non-pixel region (NPA). In one example of the present invention, a portion of the red electron transport layer (R_ETL) and a portion of the sensing electron transport layer (O_ETL) overlap with the upper surface (UPS), the first side (SDS_a), and the second side (SDS_b) of the device defining film (PDL).

[0171] In one example of the present invention, a red cathode electrode (R_CA) is disposed on a red electron injection layer (R_EIL). A sensing cathode electrode (O_CA) is disposed on the sensing electron injection layer (O_EIL). The red cathode electrode (R_CA) and the sensing cathode electrode (O_CA) may be electrically connected to each other. The red cathode electrode (R_CA) and the sensing cathode electrode (O_CA) may have an integral shape with each other. A portion of the red cathode electrode (R_CA) and a portion of the sensing cathode electrode (O_CA) overlap with the upper surface (UPS), the first side surface (SDS_a), and the second side surface (SDS_b) of the device defining film (PDL).

[0172] Referring to FIGS. 6 and FIGS. 7b, the red light-emitting element (ED_R) of FIGS. 7b includes a red anode electrode (R_AN), a red hole assist layer (R_HCLb), a red light-emitting layer (R_EL), a red electron transport layer (R_ETL), a red electron injection layer (R_EIL), and a red cathode electrode (R_CA). The red hole assist layer (R_HCLb) includes a red hole injection layer (R_HIL) and a red hole transport layer (R_HTLa). The photodetector (OPD) of FIGS. 7b includes a sensing anode electrode (O_AN), a sensing hole assist layer (O_HCL), a photoelectric conversion layer (PCL), a sensing electron transport layer (O_ETL), a sensing electron injection layer (O_EIL), and a sensing cathode electrode (O_CA). The sensing hole assist layer (O_HCLa) includes a sensing hole injection layer (O_HIL) and a sensing hole transport layer (O_HTLa). Hereinafter, the same reference numerals will be assigned to configurations identical to those described in FIGS. 6 and 7a, and descriptions will be omitted.

[0173] In one example of the present invention, a red hole injection layer (R_HIL) is disposed on a red anode electrode (R_AN). The red hole injection layer (R_HIL) is disposed within a red light-emitting region (PXA_Ra). A sensing hole injection layer (O_HIL) is disposed on a sensing anode electrode (O_AN). The sensing hole injection layer (O_HIL) is disposed within a sensing region (SA_a). In one example of the present invention, the red hole injection layer (R_HIL) and the sensing hole injection layer (O_HIL) are electrically insulated. Thus, with reference to FIG. 5, it is possible to prevent unintended leakage current from flowing between the pixel anode electrode (P_AN) of the light-emitting element (ED) and the sensing anode electrode (O_AN) of the light-receiving element (OPD) through the pixel hole injection layer (R_HIL) and the sensing hole injection layer (O_HIL).

[0174] In one example of the present invention, a red hole transport layer (R_HTLa) is disposed on a red hole injection layer (R_HIL). A sensing hole transport layer (O_HTLa) is disposed on the sensing hole injection layer (O_HIL). The red hole transport layer (R_HTLa) and the sensing hole transport layer (O_HTLa) may be electrically connected to each other. The red hole transport layer (R_HTLa) and the sensing hole transport layer (O_HTLa) may have an integral shape with each other. In this case, the red hole transport layer (R_HTLa) and the sensing hole transport layer (O_HTLa) may be disposed in a red emitting region (PXA_Ra), a red non-emitting region (NPXA_Ra), a sensing region (SA_a), a non-sensing region (NSA_a), and a non-pixel region (NPA_a). In one example of the present invention, a portion of the red hole transport layer (R_HTLa) and a portion of the sensing hole transport layer (O_HTLa) overlap with the upper surface (UPS), the first side (SDS_a), and the second side (SDS_b) of the device defining film (PDL). A portion of the red hole transport layer (R_HTLa) and a portion of the sensing hole transport layer (O_HTLa) are in contact with the upper surface (UPS), the first side (SDS_a), and the second side (SDS_b) of the device defining film (PDL).

[0175] The red emitting layer (R_EL) is placed on the red hole transport layer (R_HTLa). The photoelectric conversion layer (PCL) is placed on the sensing hole transport layer (O_HTLa).

[0176] The red electron transport layer (R_ETL) is placed on the red emitting layer (R_EL) and the red hole transport layer (R_HTLa). The sensing electron transport layer (O_ETL) is placed on the photoelectric conversion layer (PCL) and the sensing hole transport layer (O_HTLa). The red electron transport layer (R_ETL) and the sensing electron transport layer (O_ETL) are electrically connected.

[0177] Referring to FIGS. 6 and FIGS. 7c, the red light-emitting element (ED_R) of FIG. 7c includes a red anode electrode (R_AN), a red hole assist layer (R_HCLb), a red light-emitting layer (R_EL), a red electron transport layer (R_ETL), a red electron injection layer (R_EIL), and a red cathode electrode (R_CA). The red hole assist layer (R_HCLb) includes a red hole injection layer (R_HILa) and a red hole transport layer (R_HTLb). The photodetector (OPD) of FIG. 7b includes a sensing anode electrode (O_AN), a sensing hole assist layer (O_HCLb), a photoelectric conversion layer (PCL), a sensing electron transport layer (O_ETL), a sensing electron injection layer (O_EIL), and a sensing cathode electrode (O_CA). The sensing hole assist layer (O_HCLb) includes a sensing hole injection layer (O_HILa) and a sensing hole transport layer (O_HTLb). Hereinafter, the same reference numerals will be assigned to configurations identical to those described in FIGS. 6 and 7a, and descriptions will be omitted.

[0178] In one example of the present invention, a red hole injection layer (R_HILa) is disposed on a red anode electrode (R_AN). The red hole injection layer (R_HILa) is disposed within a red emitting region (PXA_Ra) and a red non-emitting region (NPXA_Rb). In one example of the present invention, a portion of the red hole injection layer (R_HILa) is disposed on the red anode electrode (R_AN), and a portion of the red hole injection layer (R_HILa) is disposed on a first side (SDS_a) of a device defining film (PDL). In one example of the present invention, the thickness of the red hole injection layer (R_HILa) disposed on the first side (SDS_a) becomes thinner as it is adjacent to the upper surface (UPS) of the device defining film (PDL).

[0179] A sensing hole injection layer (O_HILa) is disposed on a sensing anode electrode (O_AN). The sensing hole injection layer (O_HILa) is disposed within a sensing region (SA_a) and a non-sensing region (NSA_b). In one example of the present invention, a portion of the sensing hole injection layer (O_HILa) is disposed on the sensing anode electrode (O_AN), and a portion of the sensing hole injection layer (O_HILa) is disposed on a second side (SDS_b) of a device defining film (PDL). In one example of the present invention, the thickness of the sensing hole injection layer (O_HILa) disposed on the second side (SDS_b) becomes thinner as it approaches the upper surface (UPS) of the device defining film (PDL).

[0180] In one example of the present invention, the red hole injection layer (R_HILa) and the sensing hole injection layer (O_HILa) are electrically insulated. The red hole injection layer (R_HILa) and the sensing hole injection layer (O_HILa) do not overlap with the upper surface (UPS) of the device defining film (PDL). The red hole injection layer (R_HILa) and the sensing hole injection layer (O_HILa) are not placed on the upper surface (UPS). Therefore, with reference to FIG. 5, it is possible to prevent unintended leakage current from flowing between the pixel anode electrode (P_AN) of the light-emitting element (ED) and the sensing anode electrode (O_AN) of the light-receiving element (OPD) through the pixel hole injection layer (R_HIL) and the sensing hole injection layer (O_HIL).

[0181] FIG. 8a is a flowchart illustrating a method for manufacturing a display device according to an embodiment of the present invention. FIG. 8b is a flowchart illustrating a step of forming a pixel hole injection layer and a sensing hole injection layer according to an embodiment of the present invention. FIGS. 9a to 9f are cross-sectional views illustrating a step of forming a pixel hole injection layer and a sensing hole injection layer according to an embodiment of the present invention. Hereinafter, the same reference numerals are assigned to configurations identical to those described in FIGS. 6 and FIG. 7a, and descriptions are omitted.

[0182] FIGS. 8A and 8B illustrate, for convenience of explanation, a method for manufacturing a display device (DD, see FIG. 1) including a display panel (DP, see FIG. 7c) having a structure shown in FIG. 7c among embodiments of the present invention. However, the present invention is not limited thereto. A person skilled in the art can manufacture various display panels having structures including FIG. 7a and 7b, as well as the technical concept of the present invention, from the method shown in FIG. 8A and 8B.

[0183] Referring to FIGS. 6, 7c and FIG. 8a, a method for manufacturing a display device (DD, see FIG. 1) of the present invention comprises the step (S100) of placing a circuit layer (DP_CL) on a base layer (BL) and the step (S200) of placing a device layer (DP_ED) on the circuit layer (DP_CL), the device layer (DP_ED) comprising a light-emitting element (ED, see FIG. 5), a light-receiving element (OPD), and a device defining film (PDL) that distinguishes between a red light-emitting element (ED_R) and a light-receiving element (OPD). Hereinafter, for convenience of explanation, the light-emitting element (ED) refers to the red light-emitting element (ED_R).

[0184] In one example of the present invention, the step of placing a device layer (DP_ED) includes the step (S201) of placing a pixel anode electrode (P_AN) and a sensing anode electrode (O_AN) on a circuit layer (DP_CL). Hereinafter, for convenience of explanation, the pixel anode electrode (P_AN) refers to the red anode electrode (R_AN). The step of placing a device layer (DP_ED) includes the step (S202) of placing a device defining film (PDL) on the red anode electrode (R_AN), the sensing anode electrode (O_AN), and the circuit layer (DP_CL). The step of placing a device layer (DP_ED) includes the step (S203) of placing a common injection layer (P_HIL, see FIG. 9a) on the red anode electrode (R_AN), the sensing anode electrode (O_AN), and the device defining film (PDL).

[0185] The step of placing the device layer (DP_ED) includes the step (S204) of etching the common injection layer (P_HIL) to form a pixel hole injection layer placed on the red anode electrode (R_AN) and a sensing hole injection layer (O_HILa) placed on the sensing anode electrode (O_AN). Hereinafter, for convenience of explanation, the pixel hole injection layer will be referred to as the red hole injection layer (R_HILa). The step (S204) of forming the red hole injection layer (R_HILa) and the sensing hole injection layer (O_HILa) will be described later in the description of FIG. 8b and FIG. 9a to 9f.

[0186] The step of placing the device layer (DP_ED) includes the step (S205) of placing a light-emitting layer on the red hole injection layer (R_HILa) and placing a photoelectric conversion layer (PCL) on the sensing hole injection layer (O_HILa). Hereinafter, for convenience of explanation, the light-emitting layer will be referred to as the red light-emitting layer (R_EL). The step of placing the device layer (DP_ED) includes the step (S206) of placing a red cathode electrode (R_CA) on the red light-emitting layer (R_EL) and placing a sensing cathode electrode (O_CA) on the photoelectric conversion layer (PCL).

[0187] As an example of the present invention, although not illustrated in FIG. 8a, a method for manufacturing a display device (DD) may further include the steps of: placing an encapsulation layer (TFE) on a red cathode electrode (R_CA) and a sensing cathode electrode (O_CA); placing an input sensing layer (ISL) on the encapsulation layer (TFE); placing a color filter layer (CFL) on the input sensing layer (ISL); and placing a window (WM) on the color filter layer (CFL).

[0188] Referring to FIGS. 7c, 8a, 8b and FIG. 9a, the common injection layer (P_HIL) may comprise a material in which the absolute value of the work function is greater than the absolute value of the work function of the red anode electrode (R_AN) and the sensing anode electrode (O_AN). In one example of the present invention, the common injection layer (P_HIL) may comprise a metal oxide. In one example of the present invention, the red anode electrode (R_AN) and the sensing anode electrode (O_AN) may be formed of a metal alloy or a conductive compound. The red anode electrode (R_AN) and the sensing anode electrode (O_AN) may comprise Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF / Ca, LiF / Al, Mo, Ti, or compounds or mixtures thereof (e.g., a mixture of Ag and Mg). Alternatively, it may be a plurality of layer structures including a reflective film or a semipermeable film formed of the above material and a transparent conductive film formed of ITO (indium tin oxide), IZO (indium zinc oxide), ZnO (zinc oxide), ITZO (indium tin zinc oxide), etc. For example, the red anode electrode (R_AN) and the sensing anode electrode (O_AN) may have a three-layer structure of ITO / Ag / ITO, but are not limited thereto. The common injection layer (P_HIL) may include WOx (tungsten oxide) or MoOx (molybdenum oxide).

[0189] In one example of the present invention, a common injection layer (P_HIL) may be disposed on a red anode electrode (R_AN), a sensing anode electrode (O_AN), and a device defining film (PDL) via physical vapor deposition. In one example of the present invention, the common injection layer (P_HIL) may be formed in common.

[0190] Referring to FIGS. 7c, 8a, 8b and 9b, the step (S204) of forming a red hole injection layer (R_HIL) and a sensing hole injection layer (O_HIL) includes the step (S204a) of forming a photoresist (PR) on a common injection layer (P_HIL). The photoresist (PR) comprises a photosensitive material whose properties change in response to light.

[0191] Referring to FIGS. 7c, 8a, 8b and 9c, the step (S204) of forming a red hole injection layer (R_HIL) and a sensing hole injection layer (O_HIL) includes the step (S204b) of exposing a photoresist (PR) using a patterned mask (MSK). The photoresist (PR) has different characteristics in the parts that receive light and the parts that do not receive light. Therefore, if a patterned mask (MSK) that includes a partially open light-blocking film is placed on the photoresist (PR) and an exposure process is performed to irradiate light onto the photoresist (PR), a portion of the exposed photoresist (PR) can be exposed. In one example of the present invention, an area where light is blocked by the mask (MSK) and light is not irradiated onto the photoresist (PR) is called a masking area (MSA). The region where light is irradiated onto the photoresist (PR) through the open portion of the mask (MSK) is called the non-masking region (NMSA). In one example of the present invention, the non-masking region (NMSA) may overlap with the device defining film (PDL). The non-masking region (NMSA) may overlap with the upper surface (UPS) of the device defining film (PDL), a part of the first side (SDS_a), and a part of the second side (SDS_b). The non-masking region (NMSA) does not overlap with the red light-emitting layer (R_EL) and the photoelectric conversion layer (PCL).

[0192] As an example of the present invention, the non-masking area (the photoresist (PR) used in the present invention may be a positive photoresist (PR) in which the bonding strength of the part irradiated with light is weakened. However, the present invention is not limited thereto. If the photoresist (PR) used in the present invention is a negative photoresist (PR) in which the bonding strength of the part irradiated with light is strengthened, the pattern of the mask (MSK) may be changed accordingly.

[0193] Referring to FIGS. 7c, 8a, 8b, 9d and 9e, the step (S204) of forming a red hole injection layer (R_HIL) and a sensing hole injection layer (O_HIL) includes the step (S204c) of developing the exposed photoresist to expose a portion (E_HIL) of the common injection layer (P_HIL) and the step (S204d) of etching the exposed common injection layer (E_HIL) to form a red hole injection layer (R_HILa) and a sensing hole injection layer (O_HILa).

[0194] In one example of the present invention, an exposed photoresist that overlaps with a non-masking region (NMSA) among the photoresists (PR) can be developed and removed. In this case, the common injection layer (P_HIL) includes a first common injection layer (E_HIL) exposed from the photoresist (PR) and a second common injection layer (N_HIL) covered by the photoresist (PR). In one example of the present invention, the first common injection layer (E_HIL) can overlap with the device defining film (PDL). Specifically, the first common injection layer (E_HIL) can overlap with the upper surface (UPS), a part of the first side surface (SDS_a), and a part of the second side surface (SDS_b) of the device defining film (PDL).

[0195] In one example of the present invention, the first common injection layer (E_HIL) can be etched by applying an etching solution (ECL) to the first common injection layer (E_HIL). In one example of the present invention, the first common injection layer (E_HIL) can be etched by a wet etching method. In one example of the present invention, the etching solution (ECL) may include tetramethylammonium hydroxide (TMAH). However, the present invention is not limited thereto, and the etching solution (ECL) may be a liquid capable of selectively etching the first common injection layer (E_HIL).

[0196] In one example of the present invention, a non-masking region (NMSA) includes a first non-masking region (PMSA) adjacent to a masking region (MSA) and a second non-masking region (EMSA) adjacent to the first non-masking region (PMSA). In one example of the present invention, in the etching step (S204d) of the first common injection layer (E_HIL), the first common injection layer (E_HIL) corresponding to the first non-masking region (PMSA) may not be completely etched. However, the first common injection layer (E_HIL) corresponding to the second non-masking region (EMSA) may be completely etched so that the red hole injection layer (R_HILa) and the sensing hole injection layer (O_HILa) can be electrically insulated from each other.

[0197] Referring to FIGS. 7c, 8a, 8b, 9d and 9e, the step (S204) of forming a red hole injection layer (R_HIL) and a sensing hole injection layer (O_HIL) may further include the step of removing photoresist (PR, unexposed photoresist (PR)) remaining after etching of the first common injection layer (E_HIL).

[0198] Through the present invention, a red hole injection layer (R_HILa) and a sensing hole injection layer (O_HILa) can be formed after the red anode electrode (R_AN), the sensing anode electrode (O_AN), and the device defining layer (PDL) are formed. Accordingly, compared to the conventional method of forming the red anode electrode (R_AN), the sensing anode electrode (O_AN), and the device defining layer (PDL) after forming the red hole injection layer (R_HILa) and the sensing hole injection layer (O_HILa), damage to the formed red hole injection layer (R_HILa) and the sensing hole injection layer (O_HILa) by the etching solution (ECL) used in subsequent processes can be minimized. Accordingly, the display quality of the pixels (PX, see FIG. 3) can be improved, and the accuracy of the bio-information sensed by the light receiving sensors (FX, see FIG. 3) can be improved.

[0199] Although the present invention has been described above with reference to preferred embodiments, those skilled in the art or those with ordinary knowledge in the relevant technical field will understand that various modifications and changes can be made to the invention without departing from the spirit and technical scope of the invention as set forth in the claims below. Accordingly, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification, but should be determined by the claims. Explanation of the symbols

[0200] DD: Display device DP_CL: Circuit layer DP_ED: Device layer ED: Light-emitting element OPD: Photodetector PDL: Element defining film P_AN: Pixel anode electrode P_CA: Pixel cathode electrode PCL: Photoelectric conversion layer O_AN: Sensing anode electrode O_CA: Sensing cathode electrode PDC: Pixel driving circuit SDC: Sensing Drive Circuit UPS: Top Surface BPS: Bottom surface SDS: Side surface R, G_HIL: Pixel hole injection layer R, G_HTL: Pixel hole transport layer O_HIL: Sensing hole injection layer O_HTL: Sensing hole transport layer R, G_ETL: Pixel electron transport layer R, G_EIL: Pixel electron injection layer O_ETL: Sensing electron transport layer O_EIL: Sensing electron injection layer PR: Photoresist MSK: Mask P_HIL: Common injection layer

Claims

Claim 1 Circuit layer; The device layer comprises a light-emitting element, a light-receiving element, and a device defining film that separates the light-emitting element and the light-receiving element, wherein the light-emitting element comprises a pixel anode electrode electrically connected to the circuit layer, a pixel hole injection layer disposed on the pixel anode electrode, a light-emitting layer disposed on the pixel hole injection layer, and a pixel cathode electrode disposed on the light-emitting layer; wherein the light-receiving element comprises a sensing anode electrode electrically connected to the circuit layer, a sensing hole injection layer disposed on the sensing anode electrode, a photoelectric conversion layer disposed on the sensing hole injection layer, and a sensing cathode electrode disposed on the photoelectric conversion layer; wherein the pixel hole injection layer and the sensing hole injection layer are electrically insulated from each other, and the pixel cathode electrode and the sensing cathode electrode are electrically connected to each other; and wherein each of the pixel hole injection layer and the sensing hole injection layer is disposed on the upper side of the device defining film and does not overlap with the upper surface of the device defining film. Device. Claim 2 A display device according to claim 1, wherein the circuit layer comprises a pixel driving circuit electrically connected to the light-emitting element and controlling the operation of the light-emitting element, and a sensing driving circuit electrically connected to the light-receiving element and controlling the operation of the light-receiving element. Claim 3 A display device according to claim 1, wherein the light-emitting element and the light-receiving element are disposed on the same layer. Claim 4 In claim 1, the element defining film comprises: a lower surface facing the circuit layer; an upper surface facing the lower surface; and a side surface connecting the lower surface and the upper surface, forming a display device. Claim 5 In claim 4, a display device in which a portion of the pixel cathode electrode and a portion of the sensing cathode electrode overlap with the upper surface and the side surface. Claim 6 delete Claim 7 In claim 4, the pixel hole injection layer and the sensing hole injection layer, respectively, are each not overlapped with the lower surface of the element defining film. Claim 8 In claim 7, the pixel hole injection layer and the sensing hole injection layer each do not come into contact with the lower surface of the element defining film. Claim 9 A display device according to claim 1, wherein the light-emitting element further comprises a pixel hole transport layer disposed between the pixel hole injection layer and the light-emitting layer, and the light-receiving element further comprises a sensing hole transport layer disposed between the sensing hole injection layer and the photoelectric conversion layer. Claim 10 In claim 9, the pixel hole transport layer and the sensing hole transport layer are electrically insulated from each other in a display device. Claim 11 In claim 9, the pixel hole transport layer and the sensing hole transport layer are electrically connected to each other in a display device. Claim 12 In claim 1, the light-emitting element further comprises a pixel electron transport layer disposed between the light-emitting layer and the pixel cathode electrode, and the light-receiving element further comprises a sensing electron transport layer disposed between the photoelectric conversion layer and the sensing cathode electrode, wherein the pixel electron transport layer and the sensing electron transport layer are electrically connected to each other. Claim 13 In claim 12, the light-emitting element further comprises a pixel electron injection layer disposed between the pixel electron transport layer and the pixel cathode electrode, and the light-receiving element further comprises a sensing electron injection layer disposed between the photoelectric conversion layer and the sensing cathode electrode, wherein the pixel electron injection layer and the sensing electron injection layer are electrically connected to each other. Claim 14 A display device according to claim 1, wherein the absolute value of the work function of the pixel hole injection layer is greater than the absolute value of the work function of the pixel anode electrode, and the absolute value of the work function of the sensing hole injection layer is greater than the absolute value of the work function of the sensing anode electrode, and each of the pixel hole injection layer and the sensing hole injection layer comprises a metal oxide. Claim 15 In claim 14, the pixel hole injection layer and the sensing hole injection layer each comprise a display device including tungsten oxide. Claim 16 In claim 14, the pixel hole injection layer and the sensing hole injection layer each comprise a display device including molybdenum oxide. Claim 17 The method comprises the steps of: placing a circuit layer on a base layer; and placing a device layer on the circuit layer, the device layer including a light-emitting element, a light-receiving element, and a device defining film separating the light-emitting element and the light-receiving element, wherein the step of placing the device layer comprises: placing a pixel anode electrode and a sensing anode electrode on the circuit layer; placing the device defining film on the pixel anode electrode, the sensing anode electrode, and the circuit layer; placing a common injection layer on the pixel anode electrode, the sensing anode electrode, and the device defining film; etching the common injection layer to form a pixel hole injection layer placed on the pixel anode electrode and a sensing hole injection layer placed on the sensing anode electrode; and, after the step of forming the pixel hole injection layer and the sensing hole injection layer, placing a light-emitting layer on the pixel hole injection layer and placing a photoelectric conversion layer on the sensing hole injection layer. A method for manufacturing a display device comprising the steps of: placing a pixel cathode electrode on the light-emitting layer and placing a sensing cathode electrode on the photoelectric conversion layer. Claim 18 A method for manufacturing a display device according to claim 17, wherein the step of forming the pixel hole injection layer and the sensing hole injection layer comprises: forming a photoresist on the common injection layer; exposing the photoresist using a patterned mask; developing the exposed photoresist to expose a portion of the common injection layer; and etching the exposed common injection layer among the common injection layers to form the pixel hole injection layer and the sensing hole injection layer. Claim 19 In claim 18, the exposed common injection layer is a method for manufacturing a display device that overlaps with the element definition film. Claim 20 A method for manufacturing a display device according to claim 19, wherein the pixel hole injection layer and the sensing hole injection layer are electrically insulated from each other, and the pixel cathode electrode and the sensing cathode electrode are electrically connected to each other.

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