Method for forming photoresist patterns and method for forming patterns

Abstract

A method for forming a photoresist pattern involves forming a silicon oxide film on a substrate. A first photoresist pattern is formed on the silicon oxide film in direct contact with the silicon oxide film. If a defect occurs in the first photoresist pattern, the substrate on which the photoresist pattern is formed is exposed to light from the front. The front-exposed first photoresist pattern is developed to completely remove the first photoresist pattern. Then, a second photoresist pattern is formed on the silicon oxide film.

Description

Technology Field

[0001] The present invention relates to a method for forming a photoresist pattern and a method for forming a pattern. More specifically, the present invention relates to a method for forming a photoresist pattern and a method for forming a pattern, comprising rework of the photoresist pattern. Background Technology

[0002] In the manufacture of semiconductor devices, a photoresist pattern may be formed for the patterning of a film. During the photolithography process for forming the photoresist pattern, defects may occur in the photoresist pattern due to process defects or process variations. If defects occur in the photoresist pattern, a rework process may be performed to completely remove the photoresist pattern. After the rework process, the photolithography process may be performed again to form the photoresist pattern. When performing the rework process of the photoresist pattern, a silicon oxide film formed beneath the photoresist pattern may also be removed by a portion of its thickness. In this case, the silicon oxide film may not have the target thickness and may have a thickness thinner than the target thickness. The problem to be solved

[0003] The objective of the present invention is to provide a method for forming a photoresist pattern including rework of the photoresist pattern.

[0004] The objective of the present invention is to provide a method for forming a pattern including rework of a photoresist pattern. means of solving the problem

[0005] A method for forming a photoresist pattern according to embodiments of the present invention for achieving the above-mentioned objectives comprises forming a silicon oxide film on a substrate. A first photoresist pattern in direct contact with the silicon oxide film is formed on the silicon oxide film. If a defect occurs in the first photoresist pattern, the substrate on which the photoresist pattern is formed is exposed to light from the front. The first photoresist pattern exposed to light from the front is developed to completely remove the first photoresist pattern. Then, a second photoresist pattern is formed on the silicon oxide film.

[0006] A method for forming a photoresist pattern according to embodiments of the present invention for achieving the above-mentioned objectives comprises forming a silicon oxide film having a first thickness on a substrate. Using a photoprocessing device, a first photoresist pattern is formed on the silicon oxide film in direct contact with the silicon oxide film. If a defect occurs in the first photoresist pattern, the substrate on which the first photoresist pattern is formed is exposed to the front in a front exposure unit within the photoprocessing device. Within the photoprocessing device, a baking process is performed to heat the substrate containing the front-exposed first photoresist pattern. Within the photoprocessing device, the front-exposed photoresist pattern is developed to completely remove the first photoresist pattern. Then, within the photoprocessing device, a second photoresist pattern is formed on the silicon oxide film having the first thickness.

[0007] A pattern forming method according to embodiments of the present invention for achieving the above-mentioned objectives comprises forming a first mandrel film and a first separator film on a substrate in which a first region and a second region are separated. The first mandrel film and the first separator film are patterned to form first structures that are extended and spaced apart from each other while having a line shape on the substrate of the first region, and forming a second structure on the substrate of the second region. A silicon oxide film having a first thickness is formed conformally on the surfaces of the substrate, the first structures, and the second structures. A first photoresist pattern is formed that covers the silicon oxide film formed on the substrate of the second region and is in direct contact with the silicon oxide film. If a defect occurs in the first photoresist pattern, the substrate on which the first photoresist pattern is formed is exposed to the entire surface. The first photoresist pattern exposed to the entire surface is developed to remove the first photoresist pattern completely. A second photoresist pattern is formed on the silicon oxide film to cover the silicon oxide film formed on the substrate of the second region. The silicon oxide film is anisotropically etched using the second photoresist pattern as an etching mask to form a spacer having a first width equal to the first thickness on the sidewalls of the first structures. Then, the first structures between the spacers are removed. Effects of the invention

[0008] According to exemplary embodiments, the photoresist pattern can be completely removed without reducing the thickness of the silicon oxide film formed underneath. Accordingly, the silicon oxide film can have a target thickness, and accordingly, the semiconductor device including the silicon oxide film can have target electrical characteristics. Brief explanation of the drawing

[0009] FIG. 1 is a block diagram of a photoprocessing apparatus according to an exemplary embodiment. FIG. 2 is a flowchart illustrating a method for forming a photoresist pattern according to exemplary embodiments. FIGS. 3 to 7 are cross-sectional views illustrating a method for forming a photoresist pattern according to exemplary embodiments. FIGS. 8 to 16 are cross-sectional views illustrating a pattern forming method according to exemplary embodiments. Specific details for implementing the invention

[0010] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0011] FIG. 1 is a block diagram of a photoprocessing apparatus according to an exemplary embodiment.

[0012] Referring to FIG. 1, the photo process device (10) includes a photo processing unit (20) for performing a photo process, an inspection unit (30) for inspection, and a front exposure unit (40) for performing rework.

[0013] The above photo processing unit (20) may include a bake unit (28) configured to heat the substrate, a spin coating unit (24) configured to coat the substrate, a developing unit (26), and an exposure unit (22). Although not illustrated, the above photo processing unit (20) may further include a handler for moving the substrate, a chiller for cooling the substrate, etc. The developing unit (26) may rotate the substrate while introducing a developing solution. The exposure unit (22) may perform an exposure process to form a photoresist pattern. The exposure unit (22) may perform scanner-type exposure.

[0014] The inspection unit (30) inspects for errors or defects in the photoresist pattern formed in the photo processing unit (20). The inspection unit (30) can inspect, for example, the line width, thickness, sidewall profile, overlay placement, etc. of the photoresist. The inspection unit (30) may include, for example, a scanning electron microscope.

[0015] The front exposure unit (40) may be provided to remove all of the photoresist pattern when an error or defect occurs in the photoresist pattern. The front exposure unit (40) may include a UV lamp module. The light source used in the front exposure unit (40) may have a wavelength of 157 nm to 248 nm. For example, the light source may be an ArF light source (laser of ArF) having a wavelength of 193 nm, a KrF light source (laser of KrF) having a wavelength of 248 nm, an F2 light source (laser of F2) having a wavelength of 157 nm, etc. In an exemplary embodiment, the light source may be the same light source as the light source used in the exposure unit (22) within the photo processing unit (20). The front exposure unit (40) may perform scanner-type exposure.

[0016] The above photolithography process device may generally be referred to as a photolithography track system. The photolithography track system may include a front exposure unit (40) for a rework process. However, the photolithography track system may not include a plasma etcher or a wet station for a rework process.

[0017] FIG. 2 is a flowchart illustrating a method for forming a photoresist pattern according to exemplary embodiments. FIGS. 3 to 7 are cross-sectional views illustrating a method for forming a photoresist pattern according to exemplary embodiments.

[0018] The method for forming a photoresist pattern described below includes a rework process of the photoresist pattern.

[0019] Referring to FIGS. 2 and 3, a silicon oxide film (102) is formed on a substrate (100) on which a substructure (not shown) is formed (S50). The silicon oxide film (102) may be an uppermost etching target film that is etched using a photoresist pattern as a mask. The silicon oxide film (102) may be formed to have a first thickness, which is a target thickness.

[0020] The substrate (100) may include a single-crystal semiconductor material. The substrate (100) may include a semiconductor material such as silicon, germanium, silicon-germanium, etc. In an exemplary embodiment, the substrate (100) may be single-crystal silicon.

[0021] In an exemplary embodiment, the silicon oxide film (102) may be formed via atomic layer deposition. In an exemplary embodiment, the first thickness of the silicon oxide film (102) may be a thin thickness of 10 Å to 1000 Å. In an exemplary embodiment, the silicon oxide film (102) may be provided as a hard mask pattern or a gate insulating film pattern through a subsequent process.

[0022] Referring to FIGS. 2 and FIGS. 4, a photoresist pattern (104) is formed on the silicon oxide film (102) (S52). The photoresist pattern (104) can be formed by performing a coating process, an exposure process, and a development process of the photoresist film. The process of forming the photoresist pattern (104) can be performed in the photo processing unit (20) of the photo process device of FIG. 1.

[0023] The above photoresist pattern (104) may come into direct contact with the upper surface of the silicon oxide film (102). Therefore, for example, an anti-reflective film may not be formed between the photoresist pattern (104) and the silicon oxide film (102). Additionally, the surface of the silicon oxide film (102) may be exposed between the photoresist patterns (104). The photoresist pattern (104) may be a positive type photoresist material that has high solubility in the developer at the exposed area.

[0024] To explain an example of a method for forming the above photoresist pattern (104), first, a photoresist film is formed by spin-coating a photoresist composition onto the silicon oxide film (102). A first baking process is performed by heating the substrate on which the photoresist film is formed. The spin-coating process may be performed in a spin-coating unit (24) within the photo processing unit (20), and the first baking process may be performed in a baking unit (28) within the photo processing unit (20).

[0025] Afterward, the photoresist film is selectively exposed through an exposure process. The exposure process can be performed in an exposure unit (22) within a photo processing unit (20). To perform the exposure process, a reticle having a circuit pattern formed thereon is first positioned on a mask stage, and then the reticle is aligned with the substrate (100). Afterward, light is irradiated onto the reticle to react the photoresist film with the light transmitted through the reticle.

[0026] After the above exposure process, a second baking process is performed on the substrate (100). Subsequently, the photoresist film on which the exposure process was performed is developed to remove the photoresist film in the exposed area. Thus, the photoresist pattern (104) can be formed. The developer that can be used during the development process may include, for example, tetramethylammonium hydroxide (TMAH). The second baking process may be performed in the baking section (28) within the photo processing unit (20), and the development process may be performed in the development section (26) within the photo processing unit (20).

[0027] Defects may occur in the photoresist pattern (104) during the execution of the above processes. Therefore, it is inspected whether the photoresist pattern (104) has been formed normally. (S54) For example, the line width, thickness, sidewall profile, overlay placement, etc. of the photoresist pattern (104) can be inspected. The inspection process can be performed in an inspection unit.

[0028] If the inspection of the above photoresist pattern (104) is within the allowable tolerance, the photo process can be completed (S56). Accordingly, subsequent processes for etching can be performed using the above photoresist pattern (104) as an etching mask.

[0029] On the other hand, if the inspection of the photoresist pattern (104) exceeds the allowable tolerance, it can be determined that the photoresist pattern (104) has a defect (S56). In this case, a rework process is performed to remove the entire photoresist pattern (104). For example, a rework process may be performed if the photoresist pattern (104) does not have a target line width or is not formed at a target location. The rework process of the photoresist pattern (104) is described below.

[0030] Referring to FIGS. 2 and FIGS. 5, a substrate (100) having the photoresist pattern (104) including defects formed thereon is exposed to the front surface (S60).

[0031] The above-mentioned front exposure is also referred to as blank exposure or flood exposure. This means exposing the entire front surface of a photoresist pattern (or photoresist film) formed on a substrate without a reticle. The light source used during the above-mentioned front exposure process may be ultraviolet light. The light source may have a wavelength of 157 nm to 248 nm. For example, the light source may be an ArF light source (laser of ArF) having a wavelength of 193 nm, a KrF light source (laser of KrF) having a wavelength of 248 nm, an F2 light source (laser of F2) having a wavelength of 157 nm, etc.

[0032] In an exemplary embodiment, the light source may be the same light source used in the exposure process for patterning the photoresist pattern (104). The front exposure process may be performed in a front exposure section. In an exemplary embodiment, the front exposure process may use a blank mask and be performed under the same process conditions as the exposure process for forming the first photoresist pattern.

[0033] When the above-described front exposure process is performed, acid (H+) can be generated from the photo-generating agent included in the photoresist pattern (104). Therefore, the solubility of the photoresist pattern (104) in the developer can be increased.

[0034] After this, a third baking process is performed on the substrate (100) on which the front-exposed photoresist pattern (104) is formed. (S62)

[0035] In an exemplary embodiment, the third bake process may be performed under the same process conditions as the second bake process. The third bake process may be performed, for example, at a temperature of about 80°C to about 150°C. When the third bake process is performed, the acid generated inside the photoresist pattern (104) during the front exposure process diffuses, and the photoresist pattern (104) may become easily soluble in the developer. The third bake process may be performed in the bake section (28) within the photo processing unit (20).

[0036] Referring to FIGS. 2 and FIGS. 6, a developing process is performed to completely remove the photoresist pattern (104). (S64) For the developing process, an aqueous solution of tetramethylammonium hydroxide (TMAH) may be used as the developer. The developing process may be performed in a developing unit (26) within the photo processing unit (20).

[0037] In order to completely remove the photoresist pattern (104) by the above development process and to ensure that no particles remain on the edges of the substrate (100), the developer solution may be introduced while rotating the substrate at a high speed of 120 RPM or higher during the development process. For example, the substrate (100) may be rotated at a speed of 120 RPM to 3000 RPM. If the substrate (100) is rotated at a speed lower than 120 RPM, the photoresist pattern (104) may not be completely removed, and if the substrate (100) is rotated at a speed higher than 3000 RPM, it may be difficult to stably support the substrate.

[0038] In the above development process, the silicon oxide film (102) exposed between the photoresist patterns (104) by the developer may be almost etched and not damaged. In an exemplary embodiment, when performing the process, the silicon oxide film (102) may be etched to a thickness thinner than 1 Å. For example, the silicon oxide film (102) may have the first thickness without being etched.

[0039] Meanwhile, a conventional rework process can be performed through an oxygen plasma washing process or a removal process using a wet etching solution or a cleaning solution, in which case the silicon oxide film formed underneath may be removed by a certain thickness. For example, the silicon oxide film may be removed by a thickness of 4 Å to 10 Å. As the thickness of the silicon oxide film decreases, process defects in the semiconductor device may occur. In particular, if the thickness of the silicon oxide film is very thin, the ratio of the thickness of the silicon oxide film removed to the deposition thickness of the silicon oxide film increases, which may cause operational failures in the semiconductor device. Therefore, if the silicon oxide film is exposed between the photoresist patterns, it may not be desirable to perform the removal process using the oxygen plasma washing process or the wet etching solution or cleaning solution. However, films other than the silicon oxide film may not be removed by the oxygen plasma washing process or the removal process using the wet etching solution, or even if they are removed, no process problems may occur. Therefore, if the silicon oxide film is not exposed between the above photoresist patterns, the oxygen plasma etching process or the removal process through a wet etching solution or a cleaning solution can be performed.

[0040] Through the above process, a rework process can be performed to completely remove the photoresist pattern (104) without damaging or reducing the thickness of the underlying silicon oxide film (102). As described, the front exposure, baking, and developing processes included in the rework process can be performed within the photoprocessing device (10). That is, since the rework process is not performed in a separate rework device, a separate rework device may not be required. Therefore, the rework process can be performed more efficiently.

[0041] Referring to FIGS. 2 and FIGS. 7, a photoresist pattern (104) is formed again on the silicon oxide film (102) (S52). The photoresist pattern (104) can be formed by performing a coating process, an exposure process, and a development process of the photoresist film. The process of forming the photoresist pattern (104) can be performed in the photo processing unit (20) of the photo process device (10) of FIG. 1. Afterwards, inspection and rework processes can be performed.

[0042] In this way, after performing the above rework process, a photoresist pattern (104) can be formed within the same photoprocessing device. Accordingly, the process of forming the photoresist pattern (104) can be simplified.

[0043] FIGS. 8 to 16 are cross-sectional views illustrating a pattern forming method according to exemplary embodiments.

[0044] The above pattern formation method includes a rework process of the photoresist pattern. Below, a case is described in which a silicon oxide film is used as a spacer provided as an etching mask in a double patterning or quadruple patterning process.

[0045] Referring to FIG. 8, a first mandrel layer (202) and a first separator layer (204) are formed on a substrate (200). The substrate (200) may include a cell pattern region (A) and a peripheral region (B). Although not illustrated, an etching target film may be further formed on the substrate (200).

[0046] A second mandrel membrane and a second separator membrane are formed on the first separator membrane (204). The first mandrel membrane (202) may include, for example, amorphous carbon. The second mandrel membrane may include, for example, a spin-on hard mask. The first separator membrane (204) and the second separator membrane may include silicon oxynitride. The first and second separator membranes may be provided as anti-reflective films.

[0047] By patterning the second separator and the second mandrel, a first mandrel pattern (206a) and a first separator pattern (208a) are formed on the cell pattern region (A) of the substrate (200), and a second mandrel pattern (206b) and a second separator pattern (208b) are formed on the peripheral region (B) of the substrate (200).

[0048] In an exemplary embodiment, the first structure (210a) in which the first mandrel pattern (206a) and the first separator pattern (208a) are stacked may have a line shape extending in one direction. The first structure (210a) may have a line width three times the first line width, which is the target line width of the pattern to be formed in a subsequent process. Additionally, the spacing between the first structures (210a) may be five times the first line width. The second structure (210b) in which the second mandrel pattern (206b) and the second separator pattern (208b) are stacked may cover the first separator (204) on the surrounding area (B).

[0049] A first silicon oxide film (220) is formed conformally on the surface of the first structure (210a), the second structure (210b), and the first separator (204).

[0050] The first silicon oxide film (220) can be provided as a hard mask for etching the first mandrel film (202) and the first separator film (204) formed on the bottom through a subsequent process.

[0051] The first silicon oxide film (220) may be deposited with a first thickness substantially equal to the first line width. To form the first silicon oxide film (220) with a thin thickness, the first silicon oxide film (220) may be formed via atomic layer deposition (ALD). In an exemplary embodiment, the first silicon oxide film (220) may have a thickness of 10 Å to 1000 Å.

[0052] Referring to FIG. 9, a second photoresist pattern (230) is formed on the first silicon oxide film (220). The second photoresist pattern (230) can cover the first silicon oxide film (220) formed on the surrounding region (B). The second photoresist pattern (230) can selectively expose the first silicon oxide film (220) on the cell pattern region (A). That is, the film to be etched by the second photoresist pattern (230) may be the first silicon oxide film (220). Additionally, the first silicon oxide film (220) may come into direct contact with the second photoresist pattern (230).

[0053] The process of forming the second photoresist pattern (230) may be the same as described with reference to FIGS. 2 and FIGS. 4. That is, the second photoresist pattern (230) may be formed by performing a coating process of a positive photoresist material, a first baking process, an exposure process, a second baking process, and a development process.

[0054] Referring to FIG. 10, an inspection process is performed on the second photoresist pattern (230), and if the inspection is outside the allowable tolerance, a rework process is performed to remove all of the second photoresist pattern (230). After the rework process is performed, the first silicon oxide film (220) may be exposed.

[0055] The above rework process may be substantially the same as described with reference to FIGS. 2, 5, and 6. That is, to perform the above rework process, the front surface of the second photoresist pattern (230) is exposed. A baking process is performed to heat-treat the front-exposed second photoresist pattern (230). The second photoresist pattern (230) is developed using a developer. In the above development process, the developer may be introduced while rotating the substrate at a speed of 120 RPM or more. Thus, the second photoresist pattern (230) can be completely removed.

[0056] In the process of performing the above rework process, the first silicon oxide film (220) may not be etched or damaged. For example, even after performing the above rework process, the first silicon oxide film (220) may have a first thickness equal to the first line width.

[0057] Referring to FIG. 11, a second photoresist pattern (230) is formed again on the first silicon oxide film.

[0058] In addition, an inspection process is performed on the second photoresist pattern (230), and if the inspection is within the allowable tolerance, a subsequent etching process is performed. If the inspection is outside the allowable tolerance, the rework process may be performed again.

[0059] The process described with reference to FIGS. 9 to 11 above can be performed within the same photoprocessing device.

[0060] Referring to FIG. 12, the first silicon oxide film (220) is anisotropically etched to form a first spacer (220a) on the sidewall of the first structure (210a). The first spacer (220a) may be provided as a hard mask for etching the lower first mandrel film (202) and the first separator film (204).

[0061] At this time, since the first silicon oxide film (220) on the surrounding area (B) is masked by the second photoresist pattern (230), the first silicon oxide film (220) may be covered on the surface of the second structure (210b) on the surrounding area (B).

[0062] Referring to FIG. 13, the first structure (210a) is selectively removed. Thus, the first spacers (220a) on the first separator (204) of the cell pattern region (A) can be spaced apart from each other. Thus, a first gap (222) can be formed between the first spacers (220a).

[0063] Meanwhile, since the second structure (210b) on the surrounding area (B) is covered with the first silicon oxide film (220), the second structure (210b) may remain unremoved during the removal process. A sidewall spacer (220b) may be formed on the sidewall of the second structure (210b).

[0064] As explained, since the first silicon oxide film (220) has a first thickness equal to the first line width even after performing the rework process, the first spacer (220a) can have the first line width, which is the target line width. In addition, the width of the first gap (222) between the first spacers (220a) can be maintained uniformly.

[0065] Alternatively, if the first silicon oxide film is removed by a portion of its thickness after the rework process, resulting in a thickness thinner than the first line width, the first spacer will have a line width smaller than the target first line width. In this case, the spacing between the first spacers may become relatively wider. Additionally, the width of the first gap portion formed by removal in the first structure and the width of the first gap portion corresponding to the spaced-out portion between the first spacers may differ. Consequently, the width of the first gap between the first spacers may not be uniform, and a first gap with a relatively large width and a first gap with a relatively small width may be alternately arranged.

[0066] Referring to FIG. 14, the first spacers (220a) are used as an etching mask to anisotropically etch the first separator (204) and the first mandrel (202) exposed between the first spacers (220a). Thus, a third structure (240a) is formed on the substrate (200) of the cell pattern region (A) in which the third mandrel pattern (202a) and the third separator pattern (204a) are stacked. When the etching process is performed, a fourth structure (240b) in which the fourth mandrel pattern (202b) and the fourth separator pattern (204b) are stacked can be formed on the substrate (200) of the peripheral region (B).

[0067] Afterward, a second silicon oxide film (250) is formed conformally on the surface of the third structure (240a), the fourth structure (240b), and the substrate (200). The second silicon oxide film (250) may be deposited with a first thickness substantially equal to the first line width. In an exemplary embodiment, the second silicon oxide film (250) may be formed via atomic layer deposition (ALD). In an exemplary embodiment, the first thickness of the second silicon oxide film (250) may have a thin thickness of 10 Å to 1000 Å.

[0068] Referring to FIG. 15, the second silicon oxide film (250) is anisotropically etched to form a second spacer (250a) on the sidewall of the third structure (240a). Additionally, a sidewall spacer (250b) may also be formed on the sidewall of the fourth structure (240b) during the anisotropic etching process.

[0069] In the above etching process, the third separator pattern (204a) may also be partially or entirely removed. However, due to the etching loading, the fourth separator pattern (204b) may be removed more slowly or hardly removed compared to the third separator pattern (204a). Therefore, the fourth separator pattern (204b) may remain thicker than the third separator pattern (204a).

[0070] Referring to FIG. 16, the third separator pattern (204a) is removed while leaving the fourth separator pattern (204b). Afterward, the third mandrel pattern (202a) is removed. The process of removing the third mandrel pattern (202a) may include an etching or etching process.

[0071] Accordingly, a second gap may be formed between the second spacers (250a) by removing the third structure (240a) on the cell pattern area (A). The second spacers (250a) on the cell pattern area (A) may have the first line width and be spaced apart from each other by the first line width. Meanwhile, the fourth structure (240b) on the surrounding area (B) may remain without being removed.

[0072] Since the second spacers (250a) are each formed on the side wall of the first spacer (220a, see FIG. 13), the width of the second gap (260) between the second spacers (250a) may vary depending on the line width and the first gap of the first spacers (220a). For example, if the line width of the first spacer (220a) is formed to be smaller than the first line width, the width of the second gap (260) between the second spacers (250a) is not uniform, and a second gap with a large width and a second gap with a small width may be alternately arranged.

[0073] However, as described, when the second photoresist pattern (230) is reworked through a front exposure process, the thickness of the first silicon oxide film (220) is hardly reduced during the rework process. Therefore, the first spacer (220a) may have the first line width, and accordingly, the second spacer (250a) may have the first line width and a uniform second gap. The second spacer (250a) may be provided as a hard mask for etching.

[0074] The rework method described above can be applied in various ways in a process where a silicon oxide film in direct contact with the photoresist pattern is formed beneath the photoresist pattern. Explanation of the symbols

[0075] 100, 200: Substrate 102: Silicon oxide film 104: Photoresist pattern 220: First silicon oxide film 210a: First structure 210b: Second structure 230 : Photoresist pattern

Claims

Claim 1 A method for forming a photoresist pattern comprising: i) forming a silicon oxide film on a substrate; ii) forming a first photoresist pattern on the silicon oxide film that is in direct contact with the silicon oxide film; iii) full-face exposure of the substrate on which the first photoresist pattern is formed when a defect occurs in the first photoresist pattern; and iv) developing the full-face exposed first photoresist pattern to completely remove the first photoresist pattern without damaging the silicon oxide film located below the first photoresist pattern; and v) forming a second photoresist pattern on the silicon oxide film. Claim 2 In claim 1, the silicon oxide film is a method for forming a photoresist pattern formed by atomic layer deposition. Claim 3 A method for forming a photoresist pattern according to claim 1, wherein the silicon oxide film is formed with a thickness of 10 Å to 1000 Å. Claim 4 A method for forming a photoresist pattern having a wavelength of 157 nm to 248 nm used in the front exposure process according to claim 1. Claim 5 A method for forming a photoresist pattern according to claim 1, wherein the front exposure process uses a blank mask and is performed under the same process conditions as the exposure process for forming the first photoresist pattern. Claim 6 A method for forming a photoresist pattern according to claim 1, wherein, in the above development process, the substrate is rotated at a speed of 120 RPM or higher while the developer is introduced. Claim 7 A method for forming a photoresist pattern according to claim 1, further comprising performing a bake process of heating a substrate including the first photoresist pattern at a temperature of 80°C to 150°C after full-face exposure of the first photoresist pattern. Claim 8 In claim 1, the above steps i) to v) are a method for forming a photoresist pattern performed in a single photoprocessing device. Claim 9 A first mandrel film and a first separator film are formed on a substrate in which a first region and a second region are separated; the first mandrel film and the first separator film are patterned to form first structures that are extended and spaced apart from each other while having a line shape on the substrate of the first region, and a second structure is formed on the substrate of the second region; a silicon oxide film having a first thickness is formed conformally on the surfaces of the substrate, the first structures, and the second structure; a first photoresist pattern is formed that covers the silicon oxide film formed on the substrate of the second region and is in direct contact with the silicon oxide film; if a defect occurs in the first photoresist pattern, the substrate on which the first photoresist pattern is formed is fully exposed to light; and the fully exposed first photoresist pattern is developed to completely remove the first photoresist pattern; and a second photoresist pattern is formed on the silicon oxide film to cover the silicon oxide film formed on the substrate of the second region. A pattern forming method comprising: etching the silicon oxide film using the second photoresist pattern as an etching mask to form a spacer having a first width equal to the first thickness on the sidewalls of the first structures; and removing the first structures between the spacers. Claim 10 A pattern forming method according to claim 9, wherein the front exposure process uses a blank mask and is performed under the same process conditions as the exposure process for forming the first photoresist pattern.

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