Element package, packaging substrate comprising the same and manufacture method for the same
Patent Information
- Application Number
- KR1020250190731
- Authority / Receiving Office
- KR · KR
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2024-12-31
- Filing Date
- 2025-12-04
- Publication Date
- 2026-09-11
- Estimated Expiration
- 2045-12-04
Smart Images

Figure 112025137166005-PAT00001_ABST
Abstract
Description
Technology Field
[0001] An embodiment relates to a device package, a packaging substrate including the same, and a method for manufacturing the same. Background Technology
[0003] In the production of electronic components, implementing circuits on a semiconductor wafer is called the front-end process (FE), and assembling the wafer into a state usable in an actual product is called the back-end process (BE), and the packaging process is included in the back-end process.
[0004] The four core technologies of the semiconductor industry that have enabled the rapid development of electronic products in recent years are semiconductor technology, semiconductor packaging technology, manufacturing process technology, and software technology. While semiconductor technology is evolving into various forms, such as sub-micron and nano-scale linewidths, over ten million cells, high-speed operation, and significant heat dissipation, the technology to perfectly package these technologies has not yet been sufficiently supported. Consequently, the electrical performance of semiconductors is sometimes determined by packaging technology and the resulting electrical connections, rather than by the performance of the semiconductor technology itself.
[0005] As the electronics industry advances, there is a growing demand for high density, multifunctionality, and miniaturization in electronic products. Device-embedded substrates and packages embed passive or active components within the package substrate. This approach can shorten circuit lengths and improve electrical characteristics, while also enhancing the reliability of the package substrate and reducing manufacturing costs. Prior art literature
[0006] Korean Published Patent No. 10-2021-0068579 The problem to be solved
[0007] The purpose of the embodiment is to provide a device package, etc., which has excellent reliability and long-term durability and facilitates the formation of electrical connections when mounted on a packaging substrate. means of solving the problem
[0009] A device package according to one embodiment of the present specification includes one or more devices and an encapsulation layer surrounding the devices.
[0010] The above-mentioned encapsulation layer includes a first encapsulation layer surrounding the upper surface of the element and a second encapsulation layer disposed below the first encapsulation layer.
[0011] The above device package further includes an adhesive layer disposed between the first encapsulation layer and the second encapsulation layer.
[0012] At least a portion of the adhesive layer may be disposed in contact with the lower surface of the first encapsulation layer.
[0013] The ratio of the area of the adhesive layer to the area of the lower surface of the above-mentioned device package may be 15% or more.
[0014] The adhesive layer may include any one selected from the group consisting of silicone-based adhesives, epoxy-based adhesives, acrylic-based adhesives, and combinations thereof.
[0015] The above-described device package may include a first point located on the lower surface of the device and a second point located on the lower surface of the second encapsulation layer.
[0016] The minimum value of the distance between the first point and the second point may be 5㎛ to 100㎛.
[0017] The thickness of the second encapsulation layer located below the above element may be 5㎛ to 100㎛.
[0018] A packaging substrate according to another embodiment of the present specification includes a core layer and a cavity portion which is a space formed by recessing a portion of the upper surface of the core layer.
[0019] The above packaging substrate includes the device package disposed in the cavity portion.
[0020] A method for manufacturing a device package according to another embodiment of the present specification comprises: a preliminary device package preparation step of providing a preliminary device package comprising one or more devices and a first encapsulation layer surrounding the upper surface of said device; an adhesive layer forming step of forming an adhesive layer disposed on the lower surface of said preliminary device package; and a second encapsulation layer forming step of manufacturing a device package by forming a second encapsulation layer disposed below the lower surface of said preliminary device package on which the adhesive layer is formed.
[0021] The above adhesive layer formation step may include an adhesive layer placement process of placing an adhesive layer on the lower surface of the above-described pre-device package and a plasma treatment process of plasma treating the lower surface of the above-described pre-device package on which the adhesive layer is placed.
[0022] In the above adhesive layer formation step, at least a portion of the adhesive layer can be formed to be in contact with the lower surface of the element.
[0023] In the above adhesive layer formation step, the adhesive layer can be formed such that the ratio of the area of the adhesive layer to the area of the lower surface of the above pre-device package is 15% or more.
[0024] The adhesive layer may include any one selected from the group consisting of silicone-based adhesives, epoxy-based adhesives, acrylic-based adhesives, and combinations thereof. Effects of the invention
[0026] The device package of the embodiment has excellent reliability and long-term durability, and can facilitate the formation of electrical connections when mounted on a packaging substrate. Brief explanation of the drawing
[0028] FIG. 1 is a cross-sectional view illustrating a device package according to one embodiment of an embodiment. FIG. 2 is a cross-sectional view illustrating a packaging substrate according to another embodiment of the embodiment. Specific details for implementing the invention
[0029] Hereinafter, embodiments are described in detail with reference to the attached drawings so that those skilled in the art can easily implement the present invention. However, the present invention may be embodied in various different forms and is not limited to the embodiments described herein. Throughout the specification, similar parts are denoted by the same reference numerals.
[0030] Throughout this specification, the term “combination thereof” included in the Markush-type expression means one or more mixtures or combinations selected from the group consisting of the components described in the Markush-type expression, and means including one or more selected from the group consisting of said components.
[0031] Throughout this specification, terms such as “first,” “second,” or “A,” “B” are used to distinguish identical terms from one another. Additionally, singular expressions include plural expressions unless the context clearly indicates otherwise.
[0032] In this specification, the “~” system may mean that the compound contains a compound corresponding to “~” or a derivative of “~”.
[0033] In this specification, the meaning of B being located on A means that B is located in direct contact with A or that B is located on A with another layer located between them, and is not interpreted as being limited to B being located in contact with the surface of A.
[0034] In this specification, the meaning of being connected to B on A means that A and B are directly connected or connected through other components between A and B, and unless otherwise specifically stated, it is not interpreted as being limited to a direct connection between A and B.
[0035] In this specification, singular expressions are interpreted to include singular or plural forms as interpreted in context unless otherwise specified.
[0036] In this specification, the shapes, relative sizes, angles, etc., of each component in the drawings are exemplary and may be exaggerated for illustrative purposes, and the rights are not interpreted as being limited to the drawings.
[0037] In this specification, "A and B are adjacent" means that A and B are located in contact with each other, or that A and B are located close to each other even if they are not in contact. Unless otherwise specified, the expression "A and B are adjacent" in this specification is not interpreted as being limited to A and B being in contact with each other.
[0038] Unless otherwise specified in this specification, the physical property values of each component within the packaging substrate are interpreted as being measured at room temperature. Room temperature is 20°C to 25°C.
[0040] In the case of a device package mounted on a packaging substrate, an encapsulation layer can surround the device with a uniform thickness on the upper and lower surfaces of the device. Through this, a wiring layer can be easily formed in a vertical direction on the encapsulation layer surrounding the device.
[0041] A device package having the above-described characteristics can be prepared by first forming an encapsulation layer surrounding the upper side of the device and then forming an encapsulation layer surrounding the lower side of the device. Specifically, when a composition for manufacturing an encapsulation layer is injected into the lower side of the device, the composition may come into contact with the encapsulation layer on the upper side of the device, which has already been cured, and curing may proceed. In this case, sufficient adhesion may not be formed between the encapsulation layer formed on the upper side of the device and the encapsulation layer formed on the lower side of the device. As a result, problems with the reliability of the device package may occur, and delamination between the encapsulation layers may occur.
[0042] The inventors of the embodiment completed the embodiment by experimentally confirming that, by introducing the technical features described below into the device package, it offers excellent electrical reliability and long-term durability, and facilitates the formation of electrical connections when mounted on a packaging substrate.
[0044] The following describes specific examples of implementation.
[0046] FIG. 1 is a cross-sectional view illustrating a device package according to one embodiment of an embodiment. Hereinafter, an embodiment will be described with reference to FIG. 1.
[0048] Device package
[0049] A device package (100) according to one embodiment of the embodiment includes one or more devices (10) and a sealing layer (20) surrounding the devices (10). The sealing layer (20) includes a first sealing layer (21) surrounding the upper surface of the device (10) and a second sealing layer (22) disposed below the first sealing layer (21). The device package (100) further includes an adhesive layer (30) disposed between the first sealing layer (21) and the second sealing layer (22).
[0050] The device (10) can be a semiconductor device such as a CPU, GPU, or memory chip, as well as a capacitor device, transistor device, impedance device, or other module. In other words, any semiconductor device mounted on a semiconductor device can be applied as the device (10) without limitation.
[0051] The device package (100) may include one device (10) or two or more devices. When the device package (100) includes two or more devices (10), each device (10) may be spaced apart from each other or each device (10) may be placed in contact with each other.
[0052] The encapsulation layer (20) supports and protects the device (10) and electrical connection contained within the device package (100), and can provide insulation to the target area within the device package (100).
[0053] The encapsulation layer (20) may include a material that can properly fix the element (10), etc., and prevent electrical short circuits.
[0054] The encapsulation layer (20) may include an epoxy resin. The epoxy resin may be any one selected from the group consisting of bisphenol A type epoxy resin, brominated bisphenol A type epoxy resin, bisphenol F type epoxy resin, biphenyl type epoxy resin, novolak type epoxy resin, alicyclic epoxy resin, naphthalene type epoxy resin, silicone epoxy copolymer resin, and combinations thereof.
[0055] The encapsulation layer (20) may further include additives other than the resin described above. The additives may be applied without limitation as long as they are commonly applied in the field of molding compounds. Examples of additives may include curing agents, curing catalysts, coupling agents, defoaming agents, flame retardants, surfactants, inorganic fillers, etc.
[0056] The encapsulation layer (20) may include a first encapsulation layer (21) surrounding the upper surface of the element (10) and a second encapsulation layer (22) disposed below the first encapsulation layer (21).
[0057] The first encapsulation layer (21) may surround the upper surface of the element (10) in contact with the upper surface of the element (10). Other components may be disposed between the first encapsulation layer (21) and the upper surface of the element (10). The first encapsulation layer (21) may surround at least a portion of the side surface of the element (10). The first encapsulation layer (21) may surround the side surface of the element (10) in contact with the side surface of the element (10). Other components may be disposed between the first encapsulation layer (21) and the side surface of the element (10). The first encapsulation layer (21) may surround the lower surface of the element (10). The first encapsulation layer (21) may surround the lower surface of the element (10) in contact with the lower surface of the element (10). Other components may be disposed between the first encapsulation layer (21) and the lower surface of the element (10).
[0058] The second encapsulation layer (22) is placed below the first encapsulation layer (21). The second encapsulation layer (22) may surround the bottom surface of the element (10) in contact with it. Other components may be placed between the second encapsulation layer (22) and the bottom surface of the element (10). The second encapsulation layer (22) may surround at least a portion of the side surface of the element (10). The second encapsulation layer (22) may surround the side surface of the element (10) in contact with it. Other components may be placed between the second encapsulation layer (22) and the side surface of the element (10).
[0059] The first encapsulation layer (21) and the second encapsulation layer (22) may be arranged in contact with each other in a portion of the device package (100). In this case, the interface between the first encapsulation layer (21) and the second encapsulation layer (22) may not be observed.
[0060] The first bag layer (21) and the second bag layer (22) may have the same composition or different compositions.
[0061] The device package (100) can control the thickness of the encapsulation layer (20), etc. surrounding the device (10), to within a range pre-set in the embodiment. In this case, the device (10) is stably protected, and electrically conductive layer wiring for embedding can be easily formed on the upper and lower sides of the device (10) within the device package (100).
[0062] The device package (100) may include a first point located on the lower surface of the device (10) and a second point located on the lower surface of the second encapsulation layer (22). The minimum value of the distance between the first point and the second point may be 5㎛ to 100㎛. The minimum value may be 10㎛ or more. The minimum value may be 15㎛ or more. The minimum value may be 90㎛ or less. The minimum value may be 80㎛ or less. The minimum value may be 70㎛ or less.
[0063] The device package (100) may include a third point located on the upper surface of the device (10) and a fourth point located on the upper surface of the first encapsulation layer (21). The minimum value of the distance between the third point and the fourth point may be 5㎛ to 100㎛. The minimum value may be 10㎛ or more. The minimum value may be 15㎛ or more. The minimum value may be 90㎛ or less. The minimum value may be 80㎛ or less. The minimum value may be 70㎛ or less.
[0064] In this case, it can help to accurately and densely form fine patterns on the upper and lower sides of the device (10) within the device package (100).
[0065] The device package (100) may further include an adhesive layer (30) disposed between the first encapsulation layer (21) and the second encapsulation layer (22). The adhesive layer (30) may have excellent adhesive properties for the first encapsulation layer (21) and the second encapsulation layer (22). The adhesive layer (30) allows the first encapsulation layer (21) and the second encapsulation layer (22) to be stably bonded to each other, thereby improving the durability of the device package (100) and maintaining stable electrical connections within the device package (100).
[0066] The adhesive layer (30) may be placed below the first encapsulation layer (21). At least a portion of the adhesive layer (30) may be placed in contact with the lower surface of the first encapsulation layer (21). At least a portion of the adhesive layer (30) may be placed below the device (10). At least a portion of the adhesive layer (30) may be placed in contact with the lower surface of the device (10). At least a portion of the adhesive layer (30) may be placed on the second encapsulation layer (22). At least a portion of the adhesive layer (30) may be placed in contact with the upper surface of the second encapsulation layer (22). When the adhesive layer (30) is placed as described above, cracking, peeling, etc., of the encapsulation layer (20) within the device package (100) can be effectively suppressed.
[0067] The ratio of the area of the adhesive layer (30) to the area of the lower surface of the device package (100) may be 15% or more. The ratio may be 20% or more. The ratio may be 25% or more. The ratio may be 30% or more. The ratio may be 35% or more. The ratio may be 40% or more. The ratio may be 45% or more. The ratio may be 50% or more. The ratio may be 80% or less. The ratio may be 70% or less.
[0068] The ratio of the area of the adhesive layer (30) to the area of the upper surface of the device package (100) may be 15% or more. The ratio may be 20% or more. The ratio may be 25% or more. The ratio may be 30% or more. The ratio may be 35% or more. The ratio may be 40% or more. The ratio may be 45% or more. The ratio may be 50% or more. The ratio may be 80% or less. The ratio may be 70% or less.
[0069] In this case, the adhesive layer (30) can provide sufficient bonding strength between the first encapsulation layer (21) and the second encapsulation layer (22), and the convenience of the process of forming the adhesive layer (30) can be improved.
[0070] The adhesive layer (30) may include any one selected from the group consisting of silicone-based adhesives, epoxy-based adhesives, acrylic-based adhesives, and combinations thereof. Such adhesives can provide improved adhesion through plasma treatment described below, and can stably suppress the modification and deterioration of the adhesive layer (30) caused by the plasma treatment.
[0071] Silicone-based adhesives, epoxy-based adhesives, and acrylic-based adhesives may be applied without limitation as long as they are commonly used in the bonding field.
[0073] Packaging substrate
[0074] FIG. 2 is a cross-sectional view illustrating a packaging substrate according to another embodiment of the embodiment. Hereinafter, an embodiment will be described with reference to FIG. 2.
[0075] The description in FIG. 1 above applies to the device package (100) as is. The following description focuses on the parts that differ.
[0077] A packaging substrate (200) according to another embodiment of the embodiment includes a core layer (50) and a cavity portion (51), which is a space formed by recessing the upper surface side of the core layer (50). The packaging substrate (200) includes a device package (100) disposed in the cavity portion (51).
[0078] The core layer (50) can function as a support layer in the packaging substrate (200). The core layer (50) can be applied without limitation as long as it can be utilized as a support layer in the field of the packaging substrate (200). For example, the core layer (50) can be a glass substrate, a ceramic substrate, an organic substrate, etc.
[0079] In particular, the core layer (50) may be a glass substrate. When a glass substrate is used as the core layer (50), it is advantageous for implementing fine patterns and can stably suppress the occurrence of parasitic elements.
[0080] Glass substrates may include, for example, alkali borosilicate plate glass, alkali-free borosilicate plate glass, alkali-free alkaline earth borosilicate plate glass, etc., and any plate glass used for electronic components may be used. Glass substrates for electronic devices may be used as the glass substrate, and for example, those manufactured by Schott, AGC, Corning, etc. may be used, but are not limited thereto.
[0081] The core layer (50) may include a through-via penetrating in the thickness direction of the core layer (50).
[0082] A through-via consists of an internal space and a via inner diameter surface surrounding the internal space. The internal space refers to an empty space, and the via inner diameter surface refers to the surface of a core layer (50) formed inside the through-via.
[0083] The through via may have a diameter that varies in the thickness direction of the core layer (50). The through via may have a diameter that is virtually uniform in the thickness direction of the core layer (50).
[0084] The surface of the core layer (50) may include an upper surface and a side surface formed in the thickness direction of the core layer (50) connected to the upper surface. The surface of the core layer (50) may include a lower surface facing the upper surface.
[0085] The statement that the above side is formed in the thickness direction of the core layer (50) is interpreted to mean that the above side is not only perpendicular to the upper surface of the core layer (50), but also includes at least a portion of the above side forming an angle other than 90 degrees (angle of inclination) with respect to the upper surface.
[0086] The above side may be flat or curved.
[0087] The thickness of the core layer (50) may be 100 μm or more. The thickness may be 200 μm or more. The thickness may be 300 μm or more. The thickness may be 3000 μm or less. The thickness may be 2000 μm or less. The thickness may be 1000 μm or less. In this case, the core layer (50) may have mechanical properties suitable for application to a packaging substrate (200).
[0088] The cavity portion (51) may be formed by indenting the upper surface side of the core layer (50). The cavity portion (51) may be formed by indenting a part of the upper surface side of the core layer (50) in the thickness direction of the core layer (50). The cavity portion (51) may be formed by penetrating through the core layer (50) in the thickness direction.
[0089] The cavity portion (51) may include a device package mounting space (511) and a cavity inner surface (512) surrounding the device package mounting space (511). The cavity portion (51) includes a cavity opening (not shown) disposed on the upper surface side of the core layer (50), a cavity inner surface (512) connected to the cavity opening and extending in the thickness direction of the core layer (50), and an internal space surrounded by the cavity inner surface (512).
[0090] The cavity opening may be positioned in contact with the upper surface of the core layer (50). The cavity opening may form the inner edge of the upper surface of the core layer (50).
[0091] The statement that the inner surface of the cavity (512) is formed by extending in the thickness direction of the core layer (50) is interpreted to mean that the inner surface of the cavity (512) is formed perpendicular to the upper surface of the core layer (50), and that at least a portion of the inner surface of the cavity (512) is formed at an angle other than 90 degrees with the upper surface (angle of inclination).
[0092] The inner surface (512) of the cavity may be flat or curved.
[0093] The device package mounting space (511) is a space in which the device package (100) is mounted. The device package mounting space (511) may be an internal space formed by indenting the upper surface side of the core layer (50).
[0094] The device package (100) described above may be applied. The description of the device package (100) is omitted as it overlaps with the previous content.
[0095] After placing the device package (100) in the cavity, the remaining device package mounting space (511) within the cavity can be filled with an encapsulation layer. The encapsulation layer can be applied without limitation as long as it is one that is commonly used in the field of packaging substrates.
[0096] A redistribution layer may be formed on and / or below the core layer. The redistribution layer may include an electrically conductive layer which is a conductive layer for transmitting electrical signals, and an insulating layer surrounding at least a portion of the electrically conductive layer.
[0097] The redistribution layer can be applied without limitation as long as it is commonly used in the packaging substrate field.
[0099] Method for manufacturing a device package
[0100] A method for manufacturing a device package according to another embodiment of the embodiment includes a preliminary device package preparation step of providing a preliminary device package comprising one or more devices and a first encapsulation layer surrounding the upper surface of the devices, an adhesive layer formation step of forming an adhesive layer disposed on the lower surface of the preliminary device package, and a second encapsulation layer formation step of manufacturing a device package by forming a second encapsulation layer disposed below the lower surface of the preliminary device package on which the adhesive layer is formed.
[0102] Preliminary component package preparation stage
[0103] In the preliminary device package preparation stage, a preliminary device package may be provided comprising one or more devices and a first encapsulation layer surrounding the upper surface of the devices. The devices and the first encapsulation layer may be the devices and first encapsulation layers described above. The description of the devices and the first encapsulation layer is omitted as it overlaps with the preceding content.
[0104] The lower surface of the device may be exposed to the lower surface of the preliminary device package. The lower surface of the device may be surrounded by a first encapsulation layer.
[0105] In the preliminary device package preparation step, a preliminary device package in which the device is already surrounded by a first encapsulation layer may be introduced, and a preliminary device package may be prepared by forming a first encapsulation layer to surround the upper surface of the device.
[0106] The first encapsulation layer can be formed from a composition for manufacturing the first encapsulation layer. Specifically, the device can be placed in an internal space formed in a mold. If there are two or more devices, each device can be placed within the mold according to a pre-designed spacing. The mold can be applied without limitation as long as it is one that can be conventionally used in the field of device packaging.
[0107] Subsequently, a composition for manufacturing a first encapsulation layer can be injected into the internal space of the mold to fill the remaining portion of the internal space of the mold, excluding the portion occupied by the element, with the composition for manufacturing a first encapsulation layer. The composition for manufacturing a first encapsulation layer can be cured to form a first encapsulation layer.
[0108] The composition for manufacturing the first encapsulation layer may include an epoxy resin and a curing agent. The epoxy resin may include two or more epoxy groups. The epoxy resin may be any one selected from the group consisting of bisphenol A type epoxy resin, brominated bisphenol A type epoxy resin, bisphenol F type epoxy resin, biphenyl type epoxy resin, novolak type epoxy resin, alicyclic epoxy resin, naphthalene type epoxy resin, silicone epoxy copolymer resin, and combinations thereof.
[0109] The weight average molecular weight of the above epoxy resin may be 1,000 g / mol or less. The weight average molecular weight may be 800 g / mol or less. The weight average molecular weight may be 600 g / mol or less. The weight average molecular weight may be 100 g / mol or more.
[0110] The curing agent of the embodiment is not limited to any compound capable of functioning as a curing agent for epoxy resins. For example, the curing agent may be an acid anhydride-based curing agent, an aromatic amine, a phenolic resin, an imidazole-based compound, etc.
[0111] The composition for manufacturing the first encapsulation layer may apply a curing agent of 0.3 equivalents or more per 1 equivalent of an epoxy group in the epoxy resin. The composition for manufacturing the first encapsulation layer may apply a curing agent of 0.5 equivalents or more per 1 equivalent of an epoxy group in the epoxy resin. The composition for manufacturing the first encapsulation layer may apply a curing agent of 0.7 equivalents or more per 1 equivalent of an epoxy group in the epoxy resin. The composition for manufacturing the first encapsulation layer may apply a curing agent of 2 equivalents or less per 1 equivalent of an epoxy group in the epoxy resin. The composition for manufacturing the first encapsulation layer may apply a curing agent of 1.5 equivalents or less per 1 equivalent of an epoxy group in the epoxy resin.
[0112] The composition for manufacturing the first encapsulation layer may further include a filler. The filler may contribute to the composition for manufacturing the encapsulation layer having a viscosity within a preset range in the embodiment and may help the encapsulation layer to have physical properties suitable for a device package.
[0113] The filler may contain inorganic particles. The filler may be inorganic particles. For example, silica, titania, alumina, etc., may be used as the filler.
[0114] The average particle size of the filler may be 150 nm or less. The average particle size may be 120 nm or less. The average particle size may be 100 nm or less. The average particle size may be 80 nm or less. The average particle size may be 10 nm or more. The average particle size may be 30 nm or more. In this case, the composition for manufacturing the first encapsulation layer may have viscosity characteristics suitable for filling the internal space within the mold and may help the first encapsulation layer to have the desired mechanical properties. In addition, it may be easy to implement an electrically conductive layer having a fine pitch within the first encapsulation layer.
[0115] In the embodiment, the filler content in the composition for manufacturing the first encapsulation layer can be adjusted to within a range preset in the embodiment. Through this, the composition for manufacturing the first encapsulation layer can have flow characteristics suitable for smooth filling into the internal space of the mold, and the formed first encapsulation layer can stably protect the device from external shock and thermal shock.
[0116] The composition for manufacturing the first encapsulation layer may contain 45% by weight or more of a filler. The composition for manufacturing the first encapsulation layer may contain 50% by weight or more of a filler. The composition for manufacturing the first encapsulation layer may contain 75% by weight or more of a filler. The composition for manufacturing the first encapsulation layer may contain 95% by weight or less of a filler. In this case, the composition may have flow characteristics suitable for a molding process. In addition, it is possible to form an encapsulation layer that stably fixes the device and does not apply excessive stress to the core layer in a high-temperature atmosphere when mounting the device package on a packaging substrate.
[0117] The composition for manufacturing the first encapsulation layer may include a solvent. The solvent is not limited to those that are conventionally applicable in the art. For example, the solvent may include aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, ethers, esters, etc.
[0118] The composition for manufacturing the first encapsulation layer may further include additives. The additives are not limited to those that are ordinarily applicable in the art. For example, the additives may include defoaming agents, coupling agents, flame retardants, surfactants, etc.
[0119] When injecting the composition for manufacturing the first sealing layer into the mold, the temperature of the composition may be 120°C to 250°C. The temperature may be 130°C or higher. The temperature may be 200°C or lower. The temperature may be 180°C or lower. In this case, the empty space within the mold can be sufficiently filled.
[0120] When injecting the composition for manufacturing the first encapsulation layer into the mold, the molding pressure may be 3 MPa or higher. The molding pressure may be 4 MPa or higher. The molding pressure may be 5 MPa or higher. The molding pressure may be 20 MPa or lower. Through this, the formation of voids in the first encapsulation layer can be stably suppressed.
[0121] After the composition for manufacturing the first encapsulation layer in the mold is injected, the composition can be pressurized for a certain period of time. Through this, the formation of empty spaces within the first encapsulation layer can be reliably suppressed.
[0122] After the injection of the composition for manufacturing the first encapsulation layer into the mold is completed, the pressurization time may be 30 seconds or more. The pressurization time may be 40 seconds or more. The pressurization time may be 5 minutes or less.
[0123] By lowering the temperature of the composition for manufacturing the first sealing layer placed in the internal space of the mold, the composition can be cured to form the first sealing layer. The temperature reduction time of the composition for manufacturing the first sealing layer may be 50 seconds to 500 seconds.
[0124] A preliminary device package can be prepared by forming a first encapsulation layer.
[0126] Adhesive layer formation step
[0127] The adhesive layer formation step of the embodiment can form an adhesive layer disposed on the lower surface of a preliminary device package.
[0128] The adhesive layer formation step may include an adhesive layer placement process for placing an adhesive layer on the lower surface of the preliminary device package and a plasma treatment process for plasma treating the lower surface of the preliminary device package on which the adhesive layer is placed.
[0129] The adhesive layer applied in the adhesive layer formation step may be the adhesive layer described above. The description of the adhesive layer is omitted as it overlaps with the previous content.
[0131] Adhesive layer placement process
[0132] In the process of placing the adhesive layer, the adhesive layer may be placed on the lower surface of the preliminary device package. The adhesive layer may be placed below the first encapsulation layer. At least a portion of the adhesive layer may be placed in contact with the lower surface of the first encapsulation layer. At least a portion of the adhesive layer may be placed below the device. In the preliminary device package, if at least a portion of the lower surface of the device is exposed to the outside, at least a portion of the adhesive layer may be placed in contact with the lower surface of the device.
[0133] The adhesive layer can be formed such that the ratio of the area of the adhesive layer to the area of the lower surface of the pre-device package is 15% or more. The ratio may be 20% or more. The ratio may be 25% or more. The ratio may be 30% or more. The ratio may be 35% or more. The ratio may be 40% or more. The ratio may be 45% or more. The ratio may be 50% or more. The ratio may be 80% or less. The ratio may be 70% or less.
[0134] In this case, the adhesive layer can contribute to stably fixing and attaching the first and second encapsulation layers.
[0135] The adhesive layer may include any one selected from the group consisting of silicone-based adhesives, epoxy-based adhesives, acrylic-based adhesives, and combinations thereof. Such adhesives may have enhanced adhesion depending on the plasma treatment process, and the degradation of the adhesive material caused by the plasma treatment process may be stably suppressed.
[0136] Silicone-based adhesives, epoxy-based adhesives, and acrylic-based adhesives may be applied without limitation as long as they are commonly used in the bonding field.
[0137] The adhesive layer can be formed by attaching an adhesive tape to the lower surface of a pre-device package and then removing the substrate layer of the adhesive tape. For example, an adhesive tape from Tapex can be used.
[0139] Plasma treatment process
[0140] During the plasma treatment process, the lower surface of the pre-device package on which the adhesive layer is disposed can be plasma treated. Through plasma treatment, the surface energy of the adhesive layer can be increased, and the bonding strength between the adhesive layer and the second encapsulation layer can be improved during the second encapsulation layer formation process. In addition, by simultaneously increasing the surface energy of the first encapsulation layer on the lower surface of the pre-device package, a chemical reaction can be induced between the composition for manufacturing the second encapsulation layer and the surface of the first encapsulation layer, thereby contributing to providing an encapsulation layer with improved durability.
[0141] In the plasma treatment process, any one selected from the group consisting of oxygen gas, argon, nitrogen gas, and combinations thereof can be introduced as an atmosphere gas.
[0142] In the plasma treatment process, the atmosphere gas can be introduced at a flow rate of 3 sccm or more. The atmosphere gas can be introduced at a flow rate of 5 sccm or more. The atmosphere gas can be introduced at a flow rate of 30 sccm or less. The atmosphere gas can be introduced at a flow rate of 20 sccm or less.
[0143] In the plasma treatment process, the plasma power may be 1W or more. The plasma power may be 3W or more. The plasma power may be 5W or more. The plasma power may be 30W or less. The plasma power may be 25W or less. The plasma power may be 20W or less.
[0144] The plasma treatment process can be performed for 5 seconds or more. The plasma treatment process can be performed for 7 seconds or more. The plasma treatment process can be performed for 10 seconds or more. The plasma treatment process can be performed for 60 seconds or less. The plasma treatment process can be performed for 40 seconds or less.
[0145] In this case, the durability of the encapsulation layer can be effectively improved while suppressing excessive damage to the surfaces of the adhesive layer and the first encapsulation layer caused by plasma treatment.
[0147] Second bag layer formation stage
[0148] In the second encapsulation layer formation step, a second encapsulation layer can be formed that is disposed below the lower surface of the pre-device package on which the adhesive layer is formed.
[0149] The second encapsulation layer can be formed from a composition for manufacturing the second encapsulation layer. Specifically, a pre-device package having an adhesive layer formed thereon can be placed in the internal space of a mold. The same mold used when forming the first encapsulation layer may be used.
[0150] Subsequently, a composition for manufacturing a second encapsulation layer can be injected into the internal space of the mold to fill the remaining portion of the internal space of the mold with the composition for manufacturing a second encapsulation layer, excluding the portion occupied by the preliminary device package. The composition for manufacturing a second encapsulation layer can be cured to form a second encapsulation layer.
[0151] The composition for manufacturing the second encapsulation layer may include an epoxy resin and a curing agent. The epoxy resin and curing agent described above may be used. The description of the epoxy resin and curing agent is omitted as it overlaps with the preceding content.
[0152] The composition for manufacturing the second encapsulation layer may apply a curing agent of 0.3 equivalents or more per 1 equivalent of an epoxy group in the epoxy resin. The composition for manufacturing the second encapsulation layer may apply a curing agent of 0.5 equivalents or more per 1 equivalent of an epoxy group in the epoxy resin. The composition for manufacturing the second encapsulation layer may apply a curing agent of 0.7 equivalents or more per 1 equivalent of an epoxy group in the epoxy resin. The composition for manufacturing the second encapsulation layer may apply a curing agent of 2 equivalents or less per 1 equivalent of an epoxy group in the epoxy resin. The composition for manufacturing the second encapsulation layer may apply a curing agent of 1.5 equivalents or less per 1 equivalent of an epoxy group in the epoxy resin.
[0153] The composition for manufacturing the second encapsulation layer may further include a filler. The filler described above may be used. The description of the composition and content of the filler is omitted as it overlaps with the preceding content.
[0154] The composition for manufacturing the second encapsulation layer may include a solvent. The solvent is not limited to those that are conventionally applicable in the art. For example, the solvent may include aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, ethers, esters, etc.
[0155] The composition for manufacturing the second encapsulation layer may further include additives. The additives are not limited to those that are ordinarily applicable in the art. For example, the additives may include defoaming agents, coupling agents, flame retardants, surfactants, etc.
[0156] When injecting the composition for manufacturing the second encapsulation layer into the mold, the temperature of the composition may be 120°C to 250°C. The temperature may be 130°C or higher. The temperature may be 140°C or higher. The temperature may be 230°C or lower. The temperature may be 200°C or lower.
[0157] A composition for manufacturing a second encapsulation layer in a mold can be injected at a pressure of 3 MPa or more. A composition for manufacturing a second encapsulation layer in a mold can be injected at a pressure of 4 MPa or more. A composition for manufacturing a second encapsulation layer in a mold can be injected at a pressure of 5 MPa or more. A composition for manufacturing a second encapsulation layer in a mold can be injected at a pressure of 20 MPa or less.
[0158] Through this, the formation of empty spaces within the second bag layer can be effectively suppressed.
[0159] By lowering the temperature of the composition for manufacturing the second sealing layer placed in the internal space of the mold, the composition can be cured to form the second sealing layer. The temperature of the composition for manufacturing the second sealing layer can be lowered over a period of 50 seconds to 500 seconds.
[0160] A device package can be prepared by forming a second encapsulation layer.
[0162] electrical conductive layer formation stage
[0163] The method for manufacturing a device package of an embodiment may further include a step of forming an electrically conductive layer in which an electrically conductive layer is formed on the first encapsulation layer and / or the second encapsulation layer after the step of forming an encapsulation layer.
[0164] The electrical conductive layer formation step may include a through-hole formation process for forming a through-hole formed in the thickness direction of the device package in the first encapsulation layer and / or the second encapsulation layer, and a process for forming an electrical conductive layer within the through-hole.
[0165] In the process of forming through holes, a resist film can be laminated on the surface of an encapsulation layer to which a hole pattern is to be transferred. A patterned resist film can be formed by irradiating the resist film with an exposure light in the shape of a pattern to be transferred and then developing it. The hole pattern can be transferred to the encapsulation layer by using the patterned resist film as an etching mask to etch the encapsulation layer and removing the patterned resist film.
[0166] The stacking, exposure, development, peeling, and etching of the resist film and the encapsulation layer can be applied without limitation as long as they are commonly used in the packaging field.
[0167] The electrically conductive layer within the through hole can be formed in a dry or wet manner.
[0168] The dry method is a method in which a seed layer is formed by sputtering in an area where an electrically conductive layer is to be placed, and an electrically conductive layer is formed by plating in an area where the seed layer is formed. When forming the seed layer, metals such as titanium, chromium, and nickel can be sputtered, and copper can be applied together with the above metals. Through sputtering, an anchor effect occurs in which the deposited metal particles interact with the surface where the electrically conductive layer is placed, thereby improving the adhesion of the electrically conductive layer.
[0169] The wet method is a method of forming a seed layer after applying a primer to a part where an electrically conductive layer is required. The primer may include a compound having functional groups such as amines. Depending on the degree of intended adhesion, the primer may include a compound having functional groups such as amines and a silane coupling agent together. When applying a silane coupling agent, a primer layer can be formed by pre-treating the surface to be treated with the silane coupling agent and then applying a compound having amine groups to the pre-treated area.
[0170] After forming a seed layer, an electrically conductive layer can be formed by plating a metal. Copper plating may be applied when forming the electrically conductive layer, but is not limited thereto. Before metal plating, parts within the seed layer or primer layer where the formation of a conductive layer is not required may be deactivated, or parts where the formation of a conductive layer is required may be activated before plating. Methods for activation or deactivation may include light irradiation treatment using a laser of a specific wavelength, chemical treatment, etc. However, metal plating may be performed without applying activation or deactivation treatment, and then the electrically conductive layer may be patterned by etching according to a pre-designed shape.
[0172] The embodiments are described in more detail below through specific examples. The following examples are merely illustrative to aid in understanding the embodiments, and the scope of the embodiments is not limited thereto.
[0174] Manufacturing Example: Device Package Formation
[0175] Example 1: After placing three devices in a mold, a pre-device package was prepared by injecting and curing an epoxy molding compound composition, CEL-400ZHF of Resonac, into the mold to form a first encapsulation layer surrounding the top and side surfaces of the devices. When injecting the composition for manufacturing the first encapsulation layer, the temperature of the composition was set to 175°C, the molding pressure to 7.5 MPa, and the pressurization time to 60 seconds, and the composition was cooled and cured for 180 seconds. The thickness of the first encapsulation layer formed on the device was set to 30 μm.
[0176] After removing the pre-device package from the mold, a silicone-based adhesive tape from TAPEX was attached to the lower surface of the pre-device package, and then the substrate layer of the adhesive tape was removed to form an adhesive layer. The adhesive layer was formed to cover 50% of the total surface area of the lower surface of the pre-device package.
[0177] After forming the adhesive layer, the lower surface of the pre-device package was plasma treated. During the plasma treatment, argon gas with a flow rate of 10 sccm was introduced as the atmosphere gas, the plasma power was set to 10 W, and the treatment was carried out for 20 seconds.
[0178] After plasma treatment, a preliminary device package was placed inside a mold. The preliminary device package was positioned with its bottom surface facing upward. A composition for manufacturing an encapsulation layer was injected onto the bottom surface of the preliminary device package and cured to form a second encapsulation layer, thereby providing a device package. The manufacturing conditions for forming the second encapsulation layer were applied identically to those for forming the first encapsulation layer. The thickness of the second encapsulation layer formed below the device was set to 30 μm.
[0179] Example 2: A device package was prepared under the same conditions as Example 1, except that Tapex's epoxy adhesive tape was applied as the adhesive layer.
[0180] Example 3: A device package was prepared under the same conditions as Example 1, except that Tapex’s acrylic adhesive tape was applied as the adhesive layer.
[0181] Comparative Example 1: A device package was prepared under the same conditions as Example 1, except that the adhesive layer and plasma treatment were not applied.
[0182] Comparative Example 2: A device package was prepared under the same conditions as Example 1, except that a polyurethane-based adhesive tape from Tapex was applied as the adhesive layer.
[0183] Comparative Example 3: A device package was prepared under the same conditions as Example 1, except that plasma treatment was not applied.
[0184] Comparative Example 4: A device package was prepared under the same conditions as Example 2, except that plasma treatment was not applied.
[0186] The process conditions for each example and comparative example are listed in Table 1 below.
[0188] Evaluation Example: Reliability Evaluation
[0189] JEDEC MSL-3 testing was performed on the device packages for each example and comparative example under uHAST conditions. Specifically, the device packages were left for 96 hours in an atmosphere of 130°C and 85 RH%.
[0190] Subsequently, the cross-section of the packaging substrate was observed using an optical microscope to evaluate whether delamination had occurred between the first and second encapsulation layers, whether cracks had occurred in the encapsulation layer, or whether chemical degradation had occurred in the adhesive layer.
[0191] When evaluating the occurrence of delamination, it was rated as P if no delamination was detected and F if delamination occurred.
[0192] When evaluating the occurrence of cracks in the bag layer, it was rated as P if no cracks were found and F if cracks were found.
[0193] When evaluating the chemical degradation of the adhesive layer, it was rated as P if no discoloration was found and F if discoloration was found.
[0195] The evaluation results for each example and comparative example are listed in Table 2 below.
[0197] Types of adhesive layers Plasma treatment status Example 1 silicone resin O Example 2 Epoxy resin O Example 3 acrylic resin O Comparative Example 1 - X Comparative Example 2 Polyurethane resin O Comparative Example 3 silicone resin X Comparative Example 4 Epoxy resin X
[0198] Evaluation of peeling status Evaluation of crack occurrence Evaluation of whether the adhesive layer has been modified Example 1 P P P Example 2 P P P Example 3 P P P Comparative Example 1 F P P Comparative Example 2 P P F Comparative Example 3 P F P Comparative Example 4 P F P
[0199] In the evaluation of peeling status in Table 2 above, Examples 1 to 3 were evaluated as P, while Comparative Example 1 was evaluated as F.
[0200] In the evaluation of whether cracks occurred, Examples 1 to 3 were evaluated as P, while Comparative Examples 3 and 4 were evaluated as F.
[0201] In the evaluation of whether the adhesive layer was modified, Examples 1 to 3 were evaluated as P, while Comparative Example 2 was evaluated as F.
[0203] Although preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements by those skilled in the art using the basic concept of the present invention as defined in the following claims also fall within the scope of the present invention. Explanation of the symbols
[0205] 100: Device package 10: Element 20: Bag layer 21: First bag layer 22: Second bag layer 30: Adhesive layer 200: Packaging substrate 50: Core layer 51: Cavity 511: Device package mounting space 512: Inner side of the cavity
Claims
Claim 1 A device package comprising one or more devices and a sealing layer surrounding the devices, wherein the sealing layer comprises a first sealing layer surrounding the upper surface of the device and a second sealing layer disposed below the first sealing layer, and further comprising an adhesive layer disposed between the first sealing layer and the second sealing layer, wherein the adhesive layer comprises any one selected from the group consisting of a silicone-based adhesive, an epoxy-based adhesive, an acrylic-based adhesive, and combinations thereof. Claim 2 A device package according to claim 1, wherein at least a portion of the adhesive layer is disposed in contact with the lower surface of the first encapsulation layer. Claim 3 A device package according to claim 1, wherein the ratio of the area of the adhesive layer to the area of the lower surface of the device package is 15% or more. Claim 4 delete Claim 5 A device package according to claim 1, comprising a first point located on the lower surface of the device and a second point located on the lower surface of the second encapsulation layer, wherein the minimum value of the distance between the first point and the second point is 5㎛ to 100㎛. Claim 6 A packaging substrate comprising a core layer and a cavity portion which is a space formed by recessing a portion of the upper surface of the core layer, and a device package of claim 1 disposed in the cavity portion. Claim 7 A method for manufacturing a device package, comprising: a preliminary device package preparation step of providing a preliminary device package including one or more devices and a first encapsulation layer surrounding the upper surface of said device; an adhesive layer formation step of forming an adhesive layer disposed on the lower surface of said preliminary device package; and a second encapsulation layer formation step of manufacturing a device package by forming a second encapsulation layer disposed below the lower surface of said preliminary device package on which the adhesive layer is formed; wherein the adhesive layer comprises any one selected from the group consisting of a silicone-based adhesive, an epoxy-based adhesive, an acrylic-based adhesive, and combinations thereof. Claim 8 A method for manufacturing a device package according to claim 7, wherein the adhesive layer forming step comprises an adhesive layer placement process of placing an adhesive layer on the lower surface of the preliminary device package and a plasma treatment process of plasma treating the lower surface of the preliminary device package on which the adhesive layer is placed. Claim 9 A method for manufacturing a device package according to claim 7, wherein in the step of forming the adhesive layer, at least a portion of the adhesive layer is formed to be in contact with the lower surface of the device. Claim 10 A method for manufacturing a device package according to claim 7, wherein in the adhesive layer formation step, the ratio of the area of the adhesive layer to the area of the lower surface of the preliminary device package is 15% or more. Claim 11 delete
Citation Information
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