Blank mask and method of fabricating the same

Abstract

An embodiment provides a blank mask comprising a light-transmitting substrate; a light-shielding film disposed on the light-transmitting substrate; and a photoresist layer disposed on the light-shielding film, wherein the photoresist layer comprises 7 regions divided at equal intervals in the horizontal direction and 7 regions divided at equal intervals in the vertical direction, and the thickness variation in the 49 regions is less than 100 Å.

Description

Technology Field

[0001] The example relates to a blank mask and a method for manufacturing a blank mask. Background Technology

[0002] Due to the high integration of semiconductor devices, there is a demand for the miniaturization of circuit patterns in semiconductor devices. Consequently, the importance of lithography technology, a technique for developing circuit patterns on a wafer surface using a photomask, is becoming increasingly prominent.

[0003] In order to develop finer circuit patterns, the wavelength of the exposure light source used in the photolithography process must be shortened. Recently used exposure light sources include the ArF excimer laser (wavelength 193 nm).

[0004] Meanwhile, photomasks include binary masks and phase shift masks.

[0005] A binary mask has a configuration in which a light-blocking layer pattern is formed on a light-transmitting substrate. On the patterned surface, the binary mask transmits exposure light through the transparent portions that do not contain the light-blocking layer, and blocks the exposure light through the light-blocking portions that do contain the light-blocking layer, thereby exposing the pattern onto the resist film on the wafer surface. However, as the pattern of the binary mask becomes finer, problems may arise regarding the development of fine patterns due to light diffraction occurring at the edges of the transparent portions during the exposure process.

[0006] Phase inversion masks include Levenson type, Outrigger type, and Half-tone type. Among these, the Half-tone type phase inversion mask has a configuration in which a pattern formed by a semi-transparent film is formed on a light-transmitting substrate (20). In the Half-tone type phase inversion mask, on the surface where the pattern is formed, the transparent portion that does not include the semi-transparent layer transmits exposure light, and the semi-transparent portion that includes the semi-transparent layer transmits attenuated exposure light. The attenuated exposure light has a phase difference compared to the exposure light that passed through the transparent portion. As a result, diffracted light generated at the edge of the transparent portion is canceled out by the exposure light that passed through the semi-transparent portion, so the phase inversion mask can form a more precise fine pattern on the wafer surface.

[0007] The relevant prior literature is as follows.

[0008] (Patent Document 0001) Korean Published Patent No. 10-2012-0057488

[0009] (Patent Document 0002) Korean Published Patent No. 10-2014-0130420 The problem to be solved

[0010] The embodiment aims to provide a blank mask capable of providing a photomask with low optical distortion by being precisely patterned, and a method for manufacturing the same. means of solving the problem

[0011] A blank mask according to an embodiment comprises a light-transmitting substrate; a light-shielding film disposed on the light-transmitting substrate; and a photoresist layer disposed on the light-shielding film, wherein the photoresist layer comprises 7 regions divided at equal intervals in the horizontal direction and 7 regions divided at equal intervals in the vertical direction, and the thickness variation in the 49 regions is less than 100 Å.

[0012] In a blank mask according to one embodiment, the 49 regions include a first region corresponding to the center of the optical substrate; second regions arranged along the periphery of the first region; third regions arranged along the periphery of the second regions; and fourth regions corresponding to the outer edge of the optical substrate, wherein the average thickness in the fourth regions may be greater than the average thickness in the third regions.

[0013] In a blank mask according to one embodiment, the average thickness in the fourth regions may be about 3 Å to about 10 Å greater than the average thickness in the third regions.

[0014] In a blank mask according to one embodiment, the average thickness in the fourth regions may be greater than the average thickness in the second regions.

[0015] In a blank mask according to one embodiment, the average thickness in the first region may be greater than the average thickness in the second regions.

[0016] In a blank mask according to one embodiment, the average thickness in the first region may be greater than the average thickness in the third regions.

[0017] A method for manufacturing a blank mask according to an embodiment comprises the steps of: forming an optical substrate including a light-shielding film disposed on a transparent substrate; and forming a photoresist layer on the light-shielding film while rotating the optical substrate; wherein the step of forming the photoresist layer comprises the steps of: rotating the optical substrate a first time; rotating the optical substrate a second time at a speed faster than the first time; rotating the optical substrate a third time at a speed faster than the second time; rotating the optical substrate a fourth time at a speed faster than the third time; rotating the optical substrate a fifth time at a speed slower than the fourth time; and rotating the optical substrate a sixth time at a speed slower than the fifth time.

[0018] In a method for manufacturing a blank mask according to one embodiment, the first rotational speed may be 30 rpm to 70 rpm, the second rotational speed may be 50 rpm to 100 rpm, the third rotational speed may be 70 rpm to 140 rpm, the fourth rotational speed may be 800 rpm to 3000 rpm, the fifth rotational speed may be 500 rpm to 2500 rpm, and the sixth rotational speed may be 100 rpm to 500 rpm.

[0019] In a method for manufacturing a blank mask according to one embodiment, the first rotation step, the second rotation step, the third rotation step, the fourth rotation step, the fifth rotation step, and the sixth rotation step may be performed at a temperature of 20°C to 30°C.

[0020] In a method for manufacturing a blank mask according to one embodiment, the fourth rotation step may be performed for 0.5 seconds to 2 seconds.

[0021] A blank mask according to an embodiment comprises an optical substrate including a light-transmitting substrate and a light-blocking film disposed on the light-transmitting substrate; and a photoresist layer disposed on the optical substrate, wherein the photoresist layer comprises 49 regions that are divided into 7 equal intervals in the horizontal direction and 7 equal intervals in the vertical direction, and wherein the 49 regions comprise a first region corresponding to the center of the optical substrate; second regions disposed along the periphery of the first region; third regions disposed along the periphery of the second regions; and fourth regions corresponding to the outer edge of the optical substrate, and the density of optical irregularities in the fourth regions may be greater than the density of optical irregularities in the first region, the second regions, and the third regions.

[0022] In a blank mask according to one embodiment, the optical irregularities are detected by a 532 nm laser, and 30 / 36 inch on the light-shielding film 2 It can be deployed at a rate of less than [amount].

[0023] In a blank mask according to one embodiment, the density of optical irregularities in the fourth region is 15 / 36 inch 2 25 inner pages / 36 inches 2 It could be.

[0024] In a blank mask according to one embodiment, the density of optical irregularities in the first region, the second region, and the third region is 5 / 36 inch 2 20 inner pages / 36 inches 2 It could be.

[0025] In a blank mask according to one embodiment, the diameter of the optical irregularities may be 10 nm to 500 nm.

[0026] In a blank mask according to one embodiment, the difference between the density of optical irregularities in the fourth region and the density of optical irregularities in the first region, the second region, and the third region is 1 / 36 inch 2 15 inner pages / 36 inches 2 It could be.

[0027] In a blank mask according to one embodiment, the number of optical irregularities in each fourth region may be three or fewer.

[0028] In a blank mask according to one embodiment, the photoresist layer includes a flat portion disposed on the light-blocking portion, and the optical irregularities may have an optical thickness different from that of the light-blocking portion.

[0029] In a blank mask according to one embodiment, the optical irregularities may include an optical path changing portion.

[0030] A method for manufacturing a semiconductor device according to an embodiment comprises the steps of: preparing a blank mask including an optical substrate and a photoresist layer disposed on the optical substrate; forming a photomask using the blank mask; and patterning a semiconductor substrate using the photomask, wherein the optical substrate includes a light-transmitting substrate and a light-shielding film disposed on the light-transmitting substrate, and the photoresist layer comprises 49 regions that are divided into 7 equal intervals in the horizontal direction and 7 equal intervals in the vertical direction, wherein the 49 regions include a first region corresponding to the center of the optical substrate; second regions disposed along the periphery of the first region; third regions disposed along the periphery of the second regions; and fourth regions corresponding to the outer edge of the optical substrate, wherein the density of optical irregularities in the fourth regions is greater than the density of optical irregularities in the first region, the second regions, and the third regions. Effects of the invention

[0031] The blank mask according to the embodiment may include a photoresist layer with high overall thickness uniformity. Accordingly, the photoresist layer can be precisely patterned during the exposure and development processes. Accordingly, the blank mask according to the embodiment can precisely pattern a light-blocking film and provide a precise photomask.

[0032] In particular, in the blank mask according to the embodiment, the photoresist layer may have a relatively thicker outer region. That is, the process conditions are adjusted so that the outer region of the photoresist layer is formed to be relatively slightly thicker, so that the photoresist layer may have a uniform thickness overall.

[0033] In addition, the process for forming the photoresist layer may include first to sixth rotation steps. Accordingly, the photoresist layer may have a uniform thickness overall. Also, since the photoresist layer is formed by the above process, it may have a relatively slightly thicker outer region.

[0034] Additionally, the photoresist layer may include optical irregularities. In particular, the photoresist layer may be formed such that the optical density in the outer region is higher. Accordingly, the photoresist layer can reduce the overall number of optical irregularities.

[0035] In particular, the blank mask according to the embodiment is 30 pieces / 36 inches 2 The above optical irregularities may be included in less than

[0036] Accordingly, the method for manufacturing a blank mask according to the embodiment can realize a photoresist layer having overall optical flatness. Accordingly, the photoresist layer can precisely pattern the light-shielding film.

[0037] In particular, the photoresist layer has the same number of optical irregularities detected by a 532 nm laser as described above, so it can be precisely developed by ultraviolet light.

[0038] Accordingly, a photomask having a precise pattern of a blank mask according to an embodiment can be provided. Brief explanation of the drawing

[0039] FIG. 1 is a cross-sectional view illustrating one cross section of an optical substrate according to one embodiment. FIG. 2 is a cross-sectional view illustrating one cross section of an optical substrate according to another embodiment. FIG. 3 is a cross-sectional view illustrating one cross section of an optical substrate according to another embodiment. FIG. 4 is a schematic diagram illustrating a manufacturing apparatus for a blank mask according to an embodiment. FIG. 5 is a cross-sectional view illustrating one cross section of a blank mask according to an embodiment. FIG. 6 is a cross-sectional view showing an enlarged cross-section of a blank mask according to an embodiment. Figure 7 is a plan view illustrating a photoresist layer divided into 49 regions. FIG. 8 is a cross-sectional view illustrating one cross section of a photomask according to one embodiment. Specific details for implementing the invention

[0040] Hereinafter, embodiments are described in detail so that those skilled in the art can easily implement them. However, embodiments may be implemented in various different forms and are not limited to the embodiments described herein.

[0041] Terms of degree used in this specification, such as “approximately,” “substantially,” etc., are used to mean at or near the stated value when inherent manufacturing and material tolerances are presented in the stated meaning, and are used to prevent unscrupulous infringers from unfairly exploiting the disclosure in which precise or absolute values ​​are mentioned to aid in understanding the embodiments.

[0042] Throughout this specification, the term “combination thereof” included in the Markush-type expression means one or more mixtures or combinations selected from the group consisting of the components described in the Markush-type expression, and means including one or more selected from the group consisting of said components.

[0043] Throughout this specification, the description "A and / or B" means "A, B, or A and B".

[0044] Throughout this specification, terms such as “first,” “second,” or “A,” “B” are used to distinguish identical terms from one another unless otherwise specifically noted.

[0045] In this specification, the meaning that B is located on A means that B may be located on A or that another layer may be located between them while B is located on A, and is not interpreted as being limited to B being located in contact with the surface of A.

[0046] In this specification, singular expressions are interpreted to include singular or plural forms as interpreted in context unless otherwise specified.

[0047] FIG. 1 is a cross-sectional view illustrating one cross-section of an optical substrate according to one embodiment. FIG. 2 is a cross-sectional view illustrating one cross-section of an optical substrate according to another embodiment. FIG. 3 is a cross-sectional view illustrating one cross-section of an optical substrate according to yet another embodiment. FIG. 4 is a schematic diagram illustrating a manufacturing apparatus for a blank mask according to an embodiment. FIG. 5 is a cross-sectional view illustrating one cross-section of a blank mask according to an embodiment. FIG. 6 is an enlarged cross-sectional view illustrating one cross-section of a blank mask according to an embodiment. FIG. 7 is a plan view illustrating a photoresist layer divided into 49 regions. FIG. 8 is a cross-sectional view illustrating one cross-section of a photomask according to one embodiment.

[0048] A blank mask according to an example can be manufactured by the following manufacturing process.

[0049] First, as illustrated in FIGS. 1 to 3, an optical substrate (10) may be provided. The optical substrate (10) includes a light-transmitting substrate (20) and a light-blocking film (30) positioned on the light-transmitting substrate (20).

[0050] The light-transmitting substrate (20) may have light transmittance to exposure light. The light-transmitting substrate (20) may have a transmittance of more than about 85% for exposure light with a wavelength of about 193 nm. The transmittance of the light-transmitting substrate (20) may be more than about 87%. The transmittance of the light-transmitting substrate (10) may be less than 99.99%. The light-transmitting substrate (20) may include a synthetic quartz substrate. In this case, the light-transmitting substrate (20) may suppress attenuation of the transmitted light.

[0051] The above light-transmitting substrate (20) has surface characteristics such as appropriate flatness and appropriate illumination, so it can suppress distortion of transmitted light.

[0052] The light-blocking film (30) can be placed on the top side of the light-transmitting substrate (20).

[0053] The light-blocking film (30) can at least selectively block exposure light incident on the bottom side of the light-transmitting substrate (20).

[0054] In addition, as shown in FIG. 3, when a phase inversion film (40), etc. is disposed between the light-transmitting substrate (20) and the light-blocking film (30), the light-blocking film (30) can be used as an etching mask in a process of etching the phase inversion film (40), etc. according to a pattern shape.

[0055] The above light-blocking film (30) may include at least one of a transition metal, oxygen, and nitrogen.

[0056] The above-mentioned light-blocking film (30) may contain chromium, oxygen, nitrogen, and carbon. The content of each element relative to the entire light-blocking film (30) may vary in the thickness direction. In the case of a multi-layered light-blocking film (30), the content of each element relative to the entire light-blocking film (30) may vary by layer.

[0057] The light-blocking film (30) may contain chromium in an amount of about 44 atom% to about 60 atom%. The light-blocking film (30) may contain chromium in an amount of about 47 atom% to about 57 atom%.

[0058] The light-blocking film (30) may contain carbon in an amount of about 5 atom% to 30 atom%. The light-blocking film (30) may contain carbon in an amount of about 7 atom% to about 25 atom%.

[0059] The light-blocking film (30) may contain nitrogen in an amount of about 3 atom% to about 20 atom%. The light-blocking film (30) may contain nitrogen in an amount of about 5 atom% to about 15 atom%.

[0060] The light-blocking film (30) may contain oxygen in an amount of about 20 atom% to about 45 atom%. The light-blocking film (30) may contain oxygen in an amount of about 25 atom% to about 40 atom%.

[0061] In this case, the light-blocking film (30) may have sufficient light-extinguishing properties.

[0062] As illustrated in FIG. 2, the light-blocking film (30) may include a first light-blocking layer (31) and a second light-blocking layer (32) disposed on the first light-blocking layer (31).

[0063] The second light-blocking layer (32) comprises a transition metal. Additionally, the second light-blocking layer (32) may comprise at least one of oxygen, nitrogen, and carbon. The second light-blocking layer (32) may comprise the transition metal in an amount of about 50 atom% to about 80 atom%. The second light-blocking layer (32) may comprise the transition metal in an amount of about 55 atom% to about 75 atom%. The second light-blocking layer (32) may comprise the transition metal in an amount of about 60 atom% to about 70 atom%.

[0064] The content of at least one element corresponding to oxygen, nitrogen, or carbon in the second light-blocking layer (32) may be about 10 atom% to about 35 atom%. The content of at least one element corresponding to oxygen, nitrogen, or carbon in the second light-blocking layer (32) may be about 15 atom% to about 25 atom%.

[0065] The second light-blocking layer (32) may contain nitrogen in an amount of about 5 atom% to about 20 atom%. The second light-blocking layer (32) may contain nitrogen in an amount of about 7 atom% to about 13 atom%.

[0066] The second light-blocking layer (32) may contain oxygen in an amount of about 5 atom% to about 20 atom%. The second light-blocking layer (32) may contain oxygen in an amount of about 7 atom% to about 13 atom%.

[0067] The second light-blocking layer (32) may contain carbon in an amount of about 2 atom% to about 10 atom%. The second light-blocking layer (32) may contain nitrogen in an amount of about 37 atom% to about 8 atom%.

[0068] The second light-blocking layer (32) above may contain nitrogen, oxygen, and carbon.

[0069] In this case, the light-blocking film (30) can help to substantially block exposure light by forming a laminate together with the phase inversion film (40).

[0070] The first light-blocking layer (31) may include a transition metal. The first light-blocking layer (31) may include oxygen and nitrogen. The first light-blocking layer (31) may include a transition metal in an amount of 30 atomic% or more and 60 atomic% or less. The light-blocking layer (21) may include a transition metal in an amount of 35 atomic% or more and 55 atomic% or less. The first light-blocking layer (31) may include a transition metal in an amount of 40 atomic% or more and 50 atomic% or less.

[0071] The combined value of the oxygen content and nitrogen content of the first light-blocking layer (31) may be 40 atomic% or more and 70 atomic% or less. The combined value of the oxygen content and nitrogen content of the first light-blocking layer (31) may be 45 atomic% or more and 65 atomic% or less. The combined value of the oxygen content and nitrogen content of the first light-blocking layer (31) may be 50 atomic% or more and 60 atomic% or less.

[0072] The first light-blocking layer (31) may contain oxygen in an amount of 20 atomic% or more and 40 atomic% or less. The first light-blocking layer (31) may contain oxygen in an amount of 23 atomic% or more and 33 atomic% or less. The first light-blocking layer (31) may contain oxygen in an amount of 25 atomic% or more and 30 atomic% or less.

[0073] The first light-blocking layer (31) may contain nitrogen in an amount of 5 atomic% or more and 20 atomic% or less. The first light-blocking layer (31) may contain nitrogen in an amount of 7 atomic% or more and 17 atomic% or less. The first light-blocking layer (31) may contain nitrogen in an amount of 10 atomic% or more and 15 atomic% or less.

[0074] In this case, the first light-blocking layer (31) can help the light-blocking film (30) have excellent light-extinguishing properties.

[0075] The above transition metal may include at least one of Cr, Ta, Ti, and Hf. The above transition metal may be Cr.

[0076] The thickness of the first light-blocking layer (31) may be approximately 250 Å to approximately 650 Å. The thickness of the first light-blocking layer (31) may be approximately 350 Å to approximately 600 Å. The thickness of the first light-blocking layer (31) may be approximately 400 Å to approximately 550 Å. In this case, the first light-blocking layer (31) can help the light-blocking film (30) effectively block exposure light.

[0077] The thickness of the second light-blocking layer (32) may be about 30 Å to about 200 Å. The thickness of the second light-blocking layer (32) may be about 30 Å or more and about 100 Å. The thickness of the second light-blocking layer (32) may be about 40 Å to about 80 Å. In this case, the second light-blocking layer (32) can help improve the light-extinguishing characteristics of the light-blocking film (30) and help to more precisely control the side surface profile of the light-blocking pattern film (35) formed during the patterning of the light-blocking film (30).

[0078] The ratio of the thickness of the second light-blocking layer (32) to the thickness of the first light-blocking layer (31) may be about 0.05 to about 0.3. The ratio of the thickness of the second light-blocking layer (32) to the first light-blocking layer (31) may be about 0.07 to about 0.25. The ratio of the thickness of the second light-blocking layer (32) to the first light-blocking layer (31) may be about 0.1 to about 0.2.

[0079] In this case, the light-blocking film (30) has sufficient light-extinguishing characteristics, and can more precisely control the side surface profile of the light-blocking pattern film (35) formed during the patterning of the light-blocking film (30).

[0080] The transition metal content of the second light-blocking layer (32) may have a greater value than the transition metal content of the first light-blocking layer (31).

[0081] In order to more precisely control the side surface profile of the light-blocking pattern film (35) formed by patterning the light-blocking film (30) and to ensure that the reflectance of the surface of the light-blocking film (30) to the inspection light in defect inspection has a value suitable for inspection, the second light-blocking layer (32) may be required to have a greater value of transition metal content compared to the first light-blocking layer (31).

[0082] However, in this case, during the heat treatment process of the formed light-shielding film (30), the transition metal contained in the second light-shielding layer (32) may undergo recovery, recrystallization, and grain growth. If grain growth occurs in the second light-shielding layer (32) containing a high content of transition metal, the roughness characteristics of the surface of the light-shielding film (30) may fluctuate excessively due to the excessively grown transition metal particles. This may cause an increase in the number of pseudo-defects detected when inspecting the surface of the light-shielding film (30) with high sensitivity.

[0083] The light-blocking film (30) may have a transmittance of about 1% to about 2% for light of a wavelength of 193 nm. The light-blocking film (30) may have a transmittance of about 1.3% to about 2% for light of a wavelength of 193 nm. The light-blocking film (30) may have a transmittance of about 1.4% to about 2% for light of a wavelength of 193 nm.

[0084] The light-blocking film (30) may have an optical density of about 1.8 to about 3. The light-blocking film (30) may have an optical density of about 1.9 to about 3.

[0085] In this case, the thin film including the light-blocking film (30) can effectively suppress the transmission of exposure light.

[0086] As shown in FIG. 3, the optical substrate (10) may further include a phase inversion film (40).

[0087] The phase inversion film (40) may be disposed between the light-transmitting substrate (20) and the light-blocking film (30). The phase inversion film (40) may be a thin film that attenuates the light intensity of the transmitted exposure light and substantially suppresses diffracted light occurring at the edge of the pattern by adjusting the phase difference.

[0088] The phase inversion film (40) may have a phase difference of about 170° to about 190° with respect to light of wavelength 193 nm. The phase inversion film (40) may have a phase difference of about 175° to about 185° with respect to light of wavelength 193 nm.

[0089] The phase inversion film (40) may have a transmittance of about 3% to about 10% for light of a wavelength of 193 nm. The phase inversion film (40) may have a transmittance of about 4% to about 8% for light of a wavelength of 193 nm. In this case, the resolution of the photomask (200) containing the phase inversion film (40) may be improved.

[0090] The phase inversion film (40) may include a transition metal and silicon. The phase inversion film (40) may include a transition metal, silicon, oxygen, and nitrogen. The transition metal may be molybdenum.

[0091] A hard mask (not shown) may be positioned on the light-shielding film (30). The hard mask may function as an etching mask film when etching the pattern of the light-shielding film (30). The hard mask may contain silicon, nitrogen, and oxygen.

[0092] The method for manufacturing the optical substrate (10) includes the step of forming the light-blocking film (30) on the light-transmitting substrate (20). The light-blocking film (30) may be formed by a sputtering process.

[0093] After the above sputtering process is performed, a heat treatment process may be performed.

[0094] The above heat treatment step can be carried out at a temperature of about 200°C to about 400°C.

[0095] The above heat treatment step may be carried out for about 5 minutes to about 30 minutes.

[0096] In addition, the method for manufacturing the optical substrate (10) may further include a step of cooling the light-blocking film (30) that has undergone the heat treatment process.

[0097] The sputtering target can be selected considering the composition of the light-shielding film (30) to be formed. The sputtering target may be a single target containing a transition metal. The sputtering target may include two or more targets, including one target containing a transition metal. The target containing the transition metal may contain 90 atomic percent or more of the transition metal. The target containing the transition metal may contain 95 atomic percent or more of the transition metal. The target containing the transition metal may contain 99 atomic percent of the transition metal.

[0098] The above transition metal may include at least one of Cr, Ta, Ti, and Hf. The transition metal may include Cr.

[0099] The above atmosphere gas may include an inert gas, a reactive gas, and a sputtering gas. The inert gas is a gas that does not contain elements constituting the deposited thin film. The reactive gas is a gas that contains elements constituting the deposited thin film.

[0100] The sputtering gas is a gas that ionizes in a plasma atmosphere and collides with a target. The inert gas may include helium.

[0101] The above-mentioned reactive gas may include a gas containing a nitrogen element. The gas containing a nitrogen element may be, for example, N2, NO, NO2, N2O, N2O3, N2O4, or N2O5. The reactive gas may include a gas containing an oxygen element.

[0102] The gas containing the oxygen element may be, for example, O2. The reactive gas may include a gas containing a nitrogen element and a gas containing an oxygen element. The reactive gas may include a gas containing both a nitrogen element and an oxygen element. The gas containing both a nitrogen element and an oxygen element may be, for example, NO, NO2, N2O, N2O3, N2O4, or N2O5.

[0103] In addition, the reactive gas containing carbon and oxygen may be CO2.

[0104] The sputtering gas mentioned above may be Ar gas.

[0105] The power supply applying power to the above sputtering target can be a DC power supply or an RF power supply.

[0106] Afterward, the cooled light-blocking film (30) can be cleaned. The cleaning process may include an ultraviolet irradiation process and / or a rinsing process.

[0107] The above ultraviolet irradiation process may include the step of irradiating ultraviolet rays onto the light-blocking film (30).

[0108] The above rinsing process includes the step of treating the light-blocking film (30) with a cleaning solution. The cleaning solution may include at least one of deionized water, hydrogen water, ozone water, or carbonated water. The cleaning solution may include carbonated water.

[0109] As illustrated in FIG. 4, a coating device for forming a photoresist layer (50) on the optical substrate (10) is prepared. The coating device includes a chamber (100), a chuck (200), an exhaust unit (400), a photoresist resin composition supply unit (500), and a spindle motor (700).

[0110] The chamber (100) accommodates the chuck (200). The chamber (100) may accommodate an optical substrate (10) for manufacturing a blank mask. The chamber (100) may isolate the interior from the exterior. The interior of the chamber (100) may be sealed. The pressure inside the chamber (100) may be vacuumed to a level lower than atmospheric pressure.

[0111] Additionally, the chamber (100) may include a door or cover that can be opened or closed. A heater or the like capable of controlling the temperature inside the chamber (100) may be provided in the chamber (100).

[0112] The above chuck (200) may include a support portion and a guide portion.

[0113] The support member can support the guide member. The support member (210) supports the optical substrate (10). The support member can be placed below the optical substrate (10).

[0114] The support member can temporarily fix the optical substrate (10). The support member can temporarily fix the optical substrate (10) by vacuum pressure or electrostatic force.

[0115] The guide portion may be connected to the support portion. The guide portion may be formed integrally with the support portion. The guide portion may be disposed on the side of the optical substrate (10). The guide portion may surround the side of the optical substrate (10).

[0116] A receiving portion for receiving the optical substrate (10) can be formed by the support portion and the guide portion. That is, the support portion may be disposed on the lower surface of the optical substrate (10), and the guide portion may be disposed on the side of the optical substrate (10) to form the receiving portion.

[0117] The above-mentioned receiving portion may correspond to the planar shape of the optical substrate (10). The planar shape of the receiving portion may be nearly similar to the planar shape of the optical substrate (10). The planar shape of the optical substrate (10) may be square, and the planar shape of the receiving portion may also be square.

[0118] The outer edge of the guide portion may have a circular shape. The guide portion and the support portion may have a circular shape.

[0119] The exhaust unit (400) can exhaust gas inside the chamber (100). Additionally, the exhaust unit (400) can discharge the photoresist composition remaining after coating on the optical substrate (10). The exhaust unit (400) can discharge the photoresist resin composition scattered to the side of the chuck (200).

[0120] The above photoresist resin composition supply unit (500) can supply the photoresist resin composition (510) to the upper surface of the optical substrate (10). The photoresist resin composition (510) may include a spray nozzle (520) disposed within the chamber (100). Through the spray nozzle (520), the photoresist resin composition (510) can be dropped onto the optical substrate (10). That is, the photoresist resin composition supply unit (500) can spray the photoresist resin composition (510) onto the upper surface of the optical substrate (10).

[0121] The above photoresist resin composition may be a negative-type photosensitive or radiation-sensitive resin composition. The above photoresist composition is a negative-type pattern-forming resist composition, and may be a negative-type resist composition for organic solvent development or a negative-type resist composition for alkali development. The above photoresist resin composition may typically be a chemically amplified resist composition.

[0122] The above photoresist resin composition may include a binder resin, a photosensitive agent, and an organic solvent.

[0123] Examples of the above binder resins include novolak resin, phenolic resin, epoxy resin, or polyimide resin. Examples of the above binder resins include polyvinylpyrrolidone or poly(acrylamide-co-diacetoneacrylamide).

[0124] Examples of the above-mentioned photosensitizers may be selected from at least one of the group consisting of 4,4'-diazido-2,2'-stilbendisulfonate sodium salt, 4,4'-diazo-2,2'-dibenzalacetone disulfonate disodium salt, 2,5-bis(4-azido-2-sulfobenzylidene)cyclopentanone disodium salt, or 4,4'-diazido-2,2'-stilbendisulfonate sodium salt (4,4'-diazido 2,2'-dicinnamylideneacetone sulfonate salt, DACA).

[0125] The above solvent is ethyl acetate, butyl acetate, diethylene glycol dimethyl ether, diethylene glycol dimethyl ethyl ether, dipropylene glycol dimethyl ether, methyl methoxypropionate, ethyl ethoxypropionate (EEP), ethyl lactate, propylene glycol methyl ether acetate (PGMEA), propylene glycol methyl ether, propylene glycol propyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol methyl acetate, diethylene glycol ethyl acetate, acetone, methyl isobutyl ketone, cyclohexanone, dimethylforumamide (DMF), N,N-dimethylacetamide (DMAc), N-methyl-2-pyrrolidone (NMP), γ-butyrolactone, diethyl ether, ethylene glycol dimethyl ether, diglyme, tetrahydrofuran (THF), methanol, ethanol, propanol, At least one may be selected from the group consisting of iso-propanol, methylcellosolve, ethylcellosolve, diethylene glycol methyl ether, diethylene glycol ethyl ether, dipropylene glycol methyl ether, toluene, xylene, hexane, heptane, and octane.

[0126] The content of the solids excluding the solvent of the above photoresist resin composition may be about 3 wt% to about 20 wt% based on the total weight. The content of the solids excluding the solvent of the above photoresist resin composition may be about 3 wt% to about 15 wt% based on the total weight. The content of the solids excluding the solvent of the above photoresist resin composition may be about 5 wt% to about 10 wt% based on the total weight.

[0127] The above photoresist resin composition may contain the binder resin in an amount of about 2 wt% to about 50 wt% based on the total weight. The above photoresist resin composition may contain the binder resin in an amount of about 3 wt% to about 15 wt%.

[0128] The above photoresist composition may contain the photosensitive agent in an amount of about 0.5 wt% to about 40 wt%. The above photoresist composition may contain the photosensitive agent in an amount of about 0.5 wt% to about 20 wt%. The above photoresist composition may contain the photosensitive agent in an amount of about 0.5 wt% to about 10 wt%. The above photoresist composition may contain the photosensitive agent in an amount of about 0.5 wt% to about 5 wt%.

[0129] The viscosity of the above photoresist composition may be about 0.5 cPs to about 10 cPs. The viscosity of the above photoresist composition may be about 1 cPs to about 5 cPs. The viscosity of the above photoresist composition may be about 0.5 cPs to about 5 cPs. The viscosity of the above photoresist composition may be about 1 cPs to about 4 cPs.

[0130] The above photoresist resin composition may further include additives such as leveling agents or adhesion aids.

[0131] The optical substrate (10) may be placed within the chamber (100). The optical substrate (10) may be temporarily fixed to the chuck (200). The optical substrate (10) may be placed within the receiving portion. The optical substrate (10) may be seated on the chuck (200).

[0132] A photoresist layer (50) is formed on the optical substrate (10) using the coating device.

[0133] In order for the above photoresist layer (50) to be formed, the interior of the chamber (100) is isolated from the outside by the cover of the chamber (100). Subsequently, while the chuck (200) is rotating at high speed, the photoresist resin composition is dropped and coated onto the upper surface of the optical substrate (10) by the photoresist resin composition supply unit (500). Accordingly, a photoresist resin composition layer can be formed on the optical substrate (10).

[0134] At this time, the chuck (200) can rotate the optical substrate (10) by the following method.

[0135] First, the optical substrate (10) may undergo a first rotation step. The first rotation step may be performed at a temperature of about 20°C to about 30°C. The first rotation step may have a first rotation speed. The first rotation speed may be about 30 rpm to about 70 rpm. The first rotation step may be performed for about 1 second to about 5 seconds.

[0136] Additionally, in the first rotation step, the photoresist resin composition may be dropped onto the optical substrate (10). The drop rate of the photoresist composition may be about 0.5 ml / second to about 5 ml / second.

[0137] The optical substrate (10) may undergo a second rotation step after the first rotation step. The second rotation step may be performed at a temperature of about 20°C to about 30°C. The second rotation step may have a second rotation speed. The second rotation speed may be about 50 rpm to about 100 rpm. The second rotation speed may be greater than the speed of the first rotation step. The second rotation speed may be about 5 rpm to about 70 rpm greater than the first rotation speed. The second rotation step may be performed for about 3 seconds to about 10 seconds.

[0138] The optical substrate (10) may undergo a third rotation step after the second rotation step. The third rotation step may be performed at a temperature of about 20°C to about 30°C. The third rotation step may have a third rotation speed. The third rotation speed may be about 70 rpm to about 140 rpm. The third rotation speed may be greater than the speed of the second rotation step. The third rotation speed may be about 5 rpm to about 70 rpm greater than the second rotation speed. The third rotation step may be performed for about 5 seconds to about 13 seconds.

[0139] The optical substrate (10) may undergo a fourth rotation step after the third rotation step. The fourth rotation step may be performed at a temperature of about 20°C to about 30°C. The fourth rotation step may have a fourth rotation speed. The fourth rotation speed may be about 800 rpm to about 3000 rpm. The fourth rotation speed may be about 800 rpm to about 1500 rpm. The fourth rotation speed may be about 1500 rpm to about 2500 rpm. The fourth rotation speed may be about 2000 rpm to about 3000 rpm. The fourth rotation speed may be higher than the third rotation speed. The fourth rotation speed may be about 700 rpm to about 2800 rpm higher than the third rotation speed. The speed of the fourth rotation step may be about 500 rpm to about 2500 rpm higher than the speed of the third rotation step. The fourth rotation step may proceed for about 0.5 seconds to about 2 seconds.

[0140] The optical substrate (10) may be rotated a fifth time after the fourth rotation step. The fifth rotation step may be performed at a temperature of about 20°C to about 30°C. The fifth rotation speed may be about 500 rpm to about 2500 rpm. The fifth rotation speed may be about 500 rpm to about 1200 rpm. The fifth rotation speed may be about 1000 rpm to about 2000 rpm. The fifth rotation speed may be about 1500 rpm to about 2500 rpm. The fifth rotation speed may be lower than the fourth rotation speed. The fifth rotation speed may be about 300 rpm to about 1500 rpm lower than the fourth rotation speed. The fifth rotation step may be performed for about 1 second to about 5 seconds.

[0141] The optical substrate (10) may undergo a sixth rotation step after the fifth rotation step. The sixth rotation step may be performed at a temperature of about 20°C to about 30°C. The sixth rotation step may have a sixth rotation speed. The sixth rotation speed may be about 100 rpm to about 500 rpm. The sixth rotation speed may be about 100 rpm to about 400 rpm. The sixth rotation speed may be about 100 rpm to about 300 rpm. The sixth rotation speed may be about 200 rpm to about 400 rpm. The sixth rotation speed may be lower than the fifth rotation speed. The sixth rotation speed may be about 200 rpm to about 2300 rpm lower than the fifth rotation speed. The sixth rotation time may be about 30 seconds to about 60 seconds.

[0142] In the above 6th rotation step, the photoresist resin composition layer formed on the optical substrate (10) can be dried and the solvent can be removed.

[0143] Additionally, in the rotation step of the optical substrate (10), the maximum rotation speed per viscosity may be about 300 rpm / cPs to about 1000 rpm / cPs. In the rotation step of the optical substrate (10), the maximum rotation speed per viscosity may be about 500 rpm / cPs to about 900 rpm / cPs. In the rotation step of the optical substrate (10), the maximum rotation speed per viscosity may be about 600 rpm / cPs to about 900 rpm / cPs. The maximum rotation speed per viscosity is the value obtained by dividing the maximum rotation speed during the rotation step of the optical substrate (10) by the viscosity of the photoresist resin composition.

[0144] Accordingly, as illustrated in FIG. 5, the photoresist layer (50) can be formed on the optical substrate (10). Accordingly, a blank mask comprising the optical substrate (10) and the photoresist layer (50) can be manufactured.

[0145] As shown in FIG. 6, the photoresist layer (50) may include a flat portion (51) and optical irregularities (52, 53).

[0146] The flat portion (51) may have a uniform thickness overall. Additionally, the flat portion (51) may have a thickness variation of less than approximately 100 Å overall. The flat portion (51) may have a thickness variation of less than approximately 90 Å overall. The flat portion (51) may have a thickness variation of less than approximately 80 Å overall. The flat portion (51) may have a thickness variation of less than approximately 50 Å overall. The thickness variation may be the difference between the maximum thickness and the minimum thickness in the flat portion (51).

[0147] The thickness of the flat portion (51) can be measured by a spectroscopic ellipsometer. The thickness of the flat portion (51) can be measured by Nano-View’s SE MG series, SE MF series, SE MH series, or SE MI series, etc.

[0148] The thickness of the flat portion (51) may be approximately 1000 Å to approximately 10000 Å. The thickness of the flat portion (51) may be approximately 1000 Å to approximately 5000 Å. The thickness of the flat portion (51) may be approximately 1000 Å to approximately 4000 Å.

[0149] The optical irregularities (52, 53) may have an optical thickness different from that of the flat portion (51). The optical thickness of the flat portion (51) may be derived by multiplying the refractive index of the flat portion (51) and the thickness of the flat portion (51). Additionally, the optical thickness of the optical irregularities (52, 53) may be derived by multiplying the refractive index of the optical irregularities (52, 53) and the thickness of the optical irregularities (52, 53).

[0150] The difference between the optical thickness of the flat portion (51) and the optical thickness of the optical irregularities (52, 53) may exceed about 5 nm. The difference between the optical thickness of the flat portion (51) and the optical thickness of the optical irregularities (52, 53) may exceed about 10 nm. The difference between the optical thickness of the flat portion (51) and the optical thickness of the optical irregularities (52, 53) may exceed about 15 nm. The difference between the optical thickness of the flat portion (51) and the optical thickness of the optical irregularities (52, 53) may exceed about 20 nm. The difference between the optical thickness of the flat portion (51) and the optical thickness of the optical irregularities (52, 53) may exceed about 30 nm. The difference between the optical thickness of the flat portion (51) and the optical thickness of the optical irregularities (52, 53) may exceed about 40 nm. The difference between the optical thickness of the flat portion (51) and the optical thickness of the optical irregularities (52, 53) may exceed about 50 nm.

[0151] The maximum value of the difference between the optical thickness of the flat portion (51) and the optical thickness of the optical irregularities (52, 53) may be about 500 nm.

[0152] The diameter of the optical irregularities (52, 53) may exceed about 10 nm. The diameter of the optical irregularities (52, 53) may exceed about 20 nm. The diameter of the optical irregularities (52, 53) may exceed about 30 nm. The diameter of the optical irregularities (52, 53) may exceed about 40 nm. The diameter of the optical irregularities (52, 53) may exceed about 50 nm. The diameter of the optical irregularities (52, 53) may exceed about 70 nm. The diameter of the optical irregularities (52, 53) may exceed about 100 nm.

[0153] The maximum value of the diameter of the above optical irregularities (52, 53) may be about 500 nm.

[0154] Additionally, the optical irregularities (52, 53) may include an optical path changing member. The optical path changing member may change the path of the incident light. By the optical path changing member, the path of the light incident on the optical irregularities (52, 53) may be distorted, so that the angle of incidence of the light and the angle of reflection at the optical irregularities (52, 53) may differ from each other.

[0155] That is, for light incident at the same angle, the reflection angle of the flat portion (51) and the reflection angle of the optical irregularities (52, 53) may be different from each other.

[0156] The optical irregularities (52, 53) may include a curved surface. The optical path changing part may include the curved surface of the optical irregularities (52, 53).

[0157] As illustrated in FIG. 8, the optical irregularity may include a first optical irregularity (52). The first optical irregularity (52) may be disposed within the photoresist layer (50). The first optical irregularity (52) may be disposed in a submerged form within the photoresist layer (50).

[0158] The first optical irregularity (52) may have a different refractive index from the flat portion (51). The difference between the refractive index of the first optical irregularity (52, 53) and the refractive index of the flat portion (51) may be about 0.05 to about 0.7. Accordingly, the light path may be changed at the boundary surface between the first optical irregularity (52) and the flat portion (51). That is, the reflection angle may be changed at the boundary surface between the first optical irregularity (52) and the flat portion (51).

[0159] That is, the optical path changing portion may include a boundary surface between the first optical irregularity (52) and the flat portion (51). That is, the optical path changing portion may include a curved surface of the first optical irregularity (52).

[0160] Additionally, the optical irregularity may include a second optical irregularity (53). The second optical irregularity (53) may protrude from the upper surface of the photoresist layer (50). That is, irregularities may be generated in the photoresist layer (50) by the second optical irregularity (53). That is, the height of the upper surface of the second optical irregularity (53) may be higher than the height of the upper surface of the flat portion (51). The difference between the height of the upper surface of the second optical irregularity (53) and the height of the upper surface of the flat portion (51) may be about 1 nm to about 100 nm.

[0161] In addition, among the second optical irregularities (53), the portion protruding from the upper surface of the photoresist layer (50) may have a curved surface. That is, the upper surface of the second optical irregularities (53) protrudes from the photoresist layer (50) and may be a curved surface.

[0162] The optical path changing part may include the curved surface of the second optical irregularity (53). The optical path changing part may include an upper surface exposed at the second optical irregularity (53).

[0163] The optical irregularities (52, 53) can be detected by light of approximately 532 nm. The optical irregularities (52, 53) can be detected by a laser of approximately 532 nm. The laser is irradiated onto the photoresist layer (50), and the optical irregularities (52, 53) can be detected by analyzing the light reflected from the photoresist layer (50).

[0164] After the laser is irradiated onto the photoresist layer (50), the reflected light can be sensed through an image sensor. The light reflected from the photoresist layer (50) can be sensed by the image sensor through a confocal and a special filter. Subsequently, the signal sensed through the image sensor can be processed into an 8-bit grayscale image with 256 gradations. The image can be processed into 640 × 480 pixels.

[0165] Additionally, when a difference exceeding about 3 grayscales occurs in the pixels of the image, it can be detected as the optical irregularity (52, 53). When a difference exceeding about 5 grayscales occurs in the pixels of the image, it can be detected as the optical irregularity (52, 53). When a difference exceeding about 7 grayscales occurs in the pixels of the image, it can be detected as the optical irregularity (52, 53). When a difference exceeding about 10 grayscales occurs in the pixels of the image, it can be detected as the optical irregularity (52, 53).

[0166] In addition, the planar area of ​​the optical irregularities (52, 53) can be calculated based on the number of pixels detected as the optical irregularities (52, 53) in the image above.

[0167] The optical irregularities (52, 53) can be detected by an optical surface inspection device. The optical irregularities (52, 53) can be detected by LASERTEC’s M6640S or M6641S.

[0168] In the photoresist layer (50), the number of optical irregularities (52, 53) is approximately 50 / 36 inch 2 It may be less than. In the photoresist layer (50), the number of optical irregularities (52, 53) is approximately 40 / 36 inch 2 It may be less than. In the photoresist layer (50), the number of optical irregularities (52, 53) is approximately 30 / 36 inch 2 It may be less than. In the photoresist layer (50), the number of optical irregularities (52, 53) is approximately 20 / 36 inch 2 It may be less than. In the photoresist layer (50), the number of optical irregularities (52, 53) is about 10 / 36 inch 2 It may be less than

[0169] In the photoresist layer (50), the number of optical irregularities (52, 53) is approximately 1 / 36 inch 2 Approx. 50 pages / 36 inches 2 It may be less than. In the photoresist layer (50), the number of optical irregularities (52, 53) is approximately 1 / 36 inch. 2 About 40 pieces / 36 inches 2 It may be less than. In the photoresist layer (50), the number of optical irregularities (52, 53) is approximately 1 / 36 inch. 2 About 30 pieces / 36 inches 2 It may be less than. In the photoresist layer (50), the number of optical irregularities (52, 53) is approximately 1 / 36 inch. 2 Approx. 20 pages / 36 inches 2 It may be less than. In the photoresist layer (50), the number of optical irregularities (52, 53) is approximately 1 / 36 inch. 2 About 10 pages / 36 inches 2 It may be less than

[0170] Since the photoresist layer (50) includes the optical irregularities (52, 53) in the same number as above, the photoresist layer (50) can be developed precisely. That is, since the photoresist layer (50) includes the optical irregularities (52, 53) in the same number as above, the precision in the exposure process of the photoresist layer (50) can be improved. Accordingly, the method for manufacturing a blank mask according to the embodiment can provide a precise photomask.

[0171] As shown in FIG. 7, the photoresist layer (50) may include 49 regions (1-1, 2-1, ... 4-24).

[0172] The above 49 regions can be established by seven virtual straight lines arranged horizontally at regular intervals and seven virtual straight lines arranged vertically at regular intervals. That is, the above 49 regions can be formed by dividing the photoresist layer (50) into seven horizontally at regular intervals and seven vertically at regular intervals when viewed from a plane. That is, the above 49 regions can divide the photoresist into square shapes and equal sizes. For example, the above 49 regions can be squares with a width and height of 6 / 7 inch.

[0173] Additionally, the above 49 regions may include a first region (1-1), second regions (2-1, 2-2 ... 2-8), third regions (3-1, 3-2 ... 3-16) and fourth regions (4-1, 4-2 ... 4-24).

[0174] The first region (1-1) may be located in the central part of the photoresist layer (50). More specifically, the first region (1-1) may be located in the exact center of the photoresist layer (50).

[0175] The second regions (2-1, 2-2 ... 2-8) may be arranged around the first region (1-1). The second regions (2-1, 2-2 ... 2-8) may surround the first region (1-1). The second regions (2-1, 2-2 ... 2-8) may be directly adjacent to the first region (1-1).

[0176] The third regions (3-1, 3-2 ... 3-16) may be placed around the second regions (2-1, 2-2 ... 2-8). The third regions (3-1, 3-2 ... 3-16) may surround the second regions (2-1, 2-2 ... 2-8). The third regions (3-1, 3-2 ... 3-16) may be directly adjacent to the second regions (2-1, 2-2 ... 2-8).

[0177] The fourth regions (4-1, 4-2 ... 4-24) may be arranged around the third regions (3-1, 3-2 ... 3-16). The fourth regions (4-1, 4-2 ... 4-24) may surround the third regions (3-1, 3-2 ... 3-16). The fourth regions (4-1, 4-2 ... 4-24) may be directly adjacent to the third regions (3-1, 3-2 ... 3-16). The fourth regions (4-1, 4-2 ... 4-24) may be located at the outermost edge of the photoresist layer (50).

[0178] In the above 49 regions, the thickness variation of the photoresist layer (50) may be less than about 100 Å. The thickness variation may be the difference between the largest thickness and the smallest thickness among the above 49 regions. In the above 49 regions, the thickness variation of the photoresist layer (50) may be less than about 90 Å. In the above 49 regions, the thickness variation of the photoresist layer (50) may be less than about 80 Å. In the above 49 regions, the thickness variation of the photoresist layer (50) may be less than about 70 Å. In the above 49 regions, the thickness variation of the photoresist layer (50) may be less than about 60 Å. In the above 49 regions, the thickness variation of the photoresist layer (50) may be less than about 50 Å.

[0179] In the above 49 regions, the minimum value of the thickness variation of the photoresist layer (50) may be about 3 Å.

[0180] In the photoresist layer (50), the average thickness of the fourth regions (4-1, 4-2 ... 4-24) may be greater than the average thickness of the third regions (3-1, 3-2 ... 3-16). In the photoresist layer (50), the average thickness of the fourth regions (4-1, 4-2 ... 4-24) may be greater than the average thickness of the third regions (3-1, 3-2 ... 3-16) by about 3 Å to about 10 Å. In the photoresist layer (50), the average thickness of the fourth regions (4-1, 4-2 ... 4-24) may be greater than the average thickness of the third regions (3-1, 3-2 ... 3-16) by about 4 Å to about 10 Å. In the photoresist layer (50), the average thickness of the fourth regions (4-1, 4-2 ... 4-24) may be about 5 Å to about 10 Å greater than the average thickness of the third regions (3-1, 3-2 ... 3-16).

[0181] In the photoresist layer (50), the average thickness of the fourth regions (4-1, 4-2 ... 4-24) may be greater than the average thickness of the second regions (2-1, 2-2 ... 2-8). In the photoresist layer (50), the average thickness of the fourth regions (4-1, 4-2 ... 4-24) may be greater than the average thickness of the second regions (2-1, 2-2 ... 2-8) by about 3 Å to about 10 Å. In the photoresist layer (50), the average thickness of the fourth regions (4-1, 4-2 ... 4-24) may be greater than the average thickness of the second regions (2-1, 2-2 ... 2-8) by about 4 Å to about 10 Å. In the photoresist layer (50), the average thickness of the fourth regions (4-1, 4-2 ... 4-24) may be about 5 Å to about 10 Å greater than the average thickness of the second regions (2-1, 2-2 ... 2-8).

[0182] In the photoresist layer (50), the average thickness of the fourth regions (4-1, 4-2 ... 4-24) may be greater than the average thickness of the first region (1-1). In the photoresist layer (50), the average thickness of the fourth regions (4-1, 4-2 ... 4-24) may be greater than the average thickness of the first region (1-1) by about 3 Å to about 10 Å. In the photoresist layer (50), the average thickness of the fourth regions (4-1, 4-2 ... 4-24) may be greater than the average thickness of the first region (1-1) by about 4 Å to about 10 Å. In the photoresist layer (50), the average thickness of the fourth regions (4-1, 4-2 ... 4-24) may be about 5 Å to about 10 Å greater than the average thickness of the first region (1-1).

[0183] In the photoresist layer (50), the average thickness of the first region (1-1) may be greater than the average thickness of the second regions (2-1, 2-2 ... 2-8). In the photoresist layer (50), the average thickness of the first region (1-1) may be greater than the average thickness of the second regions (2-1, 2-2 ... 2-8) by about 3 Å to about 10 Å. In the photoresist layer (50), the average thickness of the first region (1-1) may be greater than the average thickness of the second regions (2-1, 2-2 ... 2-8) by about 4 Å to about 10 Å. In the photoresist layer (50), the average thickness of the first region (1-1) may be about 5 Å to about 10 Å greater than the average thickness of the second regions (2-1, 2-2 ... 2-8).

[0184] In the photoresist layer (50), the average thickness of the first region (1-1) may be greater than the average thickness of the third regions (3-1, 3-2 ... 3-16). In the photoresist layer (50), the average thickness of the first region (1-1) may be greater than the average thickness of the third regions (3-1, 3-2 ... 3-16) by about 3 Å to about 10 Å. In the photoresist layer (50), the average thickness of the first region (1-1) may be greater than the average thickness of the third regions (3-1, 3-2 ... 3-16) by about 4 Å to about 10 Å. In the photoresist layer (50), the average thickness of the first region (1-1) may be about 5 Å to about 10 Å greater than the average thickness of the third regions (3-1, 3-2 ... 3-16).

[0185] The density of optical irregularities in the above-mentioned fourth regions (4-1, 4-2 ... 4-24) may be greater than the density of optical irregularities in the above-mentioned first region (1-1), the above-mentioned second regions (2-1, 2-2 ... 2-8), and the above-mentioned third regions (3-1, 3-2 ... 3-16). The density of optical irregularities is the value obtained by dividing the number of optical irregularities by the area of ​​the region where the optical irregularities are placed.

[0186] That is, the density of optical irregularities in the fourth regions (4-1, 4-2 ... 4-24) may be the value obtained by dividing the total number of optical irregularities placed in the fourth regions (4-1, 4-2 ... 4-24) by the total area of ​​the fourth regions (4-1, 4-2 ... 4-24).

[0187] Additionally, the density of optical irregularities in the first region (1-1), the second regions (2-1, 2-2 ... 2-8), and the third regions (3-1, 3-2 ... 3-16) is the value obtained by dividing the total number of optical irregularities arranged in the first region (1-1), the second regions (2-1, 2-2 ... 2-8), and the third regions (3-1, 3-2 ... 3-16) by the total area of ​​the first region (1-1), the second regions (2-1, 2-2 ... 2-8), and the third regions (3-1, 3-2 ... 3-16).

[0188] The density of optical irregularities in the above-mentioned fourth regions (4-1, 4-2 ... 4-24) is approximately 15 / 36 inch 2 25 inner pages / 36 inches 2 It may be. The density of optical irregularities in the above-mentioned fourth regions (4-1, 4-2 ... 4-24) is approximately 10 / 36 inch. 2 30 pieces / 36 inches 2 It may be. The density of optical irregularities in the above-mentioned fourth regions (4-1, 4-2 ... 4-24) is approximately 17 / 36 inch. 2 22 inner pages / 36 inches2 It could be.

[0189] The density of optical irregularities in the first region (1-1), the second regions (2-1, 2-2 ... 2-8), and the third regions (3-1, 3-2 ... 3-16) is approximately 5 / 36 inch 2 20 inner pages / 36 inches 2 It may be. The density of optical irregularities in the first region (1-1), the second regions (2-1, 2-2 ... 2-8) and the third regions (3-1, 3-2 ... 3-16) is about 3 / 36 inch. 2 25 inner pages / 36 inches 2 It may be. The density of optical irregularities in the first region (1-1), the second regions (2-1, 2-2 ... 2-8) and the third regions (3-1, 3-2 ... 3-16) is about 7 / 36 inch. 2 15 inner pages / 36 inches 2 It could be.

[0190] The difference between the density of optical irregularities in the fourth regions (4-1, 4-2 ... 4-24) and the density of optical irregularities in the first region (1-1), the second regions (2-1, 2-2 ... 2-8), and the third regions (3-1, 3-2 ... 3-16) is approximately 1 / 36 inch 2 20 inner pages / 36 inches 2 It may be. The difference between the density of optical irregularities in the fourth regions (4-1, 4-2 ... 4-24) and the density of optical irregularities in the first region (1-1), the second regions (2-1, 2-2 ... 2-8), and the third regions (3-1, 3-2 ... 3-16) is approximately 1 / 36 inch. 2 15 inner pages / 36 inches 2It may be. The difference between the density of optical irregularities in the fourth regions (4-1, 4-2 ... 4-24) and the density of optical irregularities in the first region (1-1), the second regions (2-1, 2-2 ... 2-8), and the third regions (3-1, 3-2 ... 3-16) is approximately 3 / 36 inch. 2 15 inner pages / 36 inches 2 It may be. The difference between the density of optical irregularities in the fourth regions (4-1, 4-2 ... 4-24) and the density of optical irregularities in the first region (1-1), the second regions (2-1, 2-2 ... 2-8), and the third regions (3-1, 3-2 ... 3-16) is approximately 5 / 36 inch 2 10 inner pages / 36 inch 2 It could be.

[0191] In addition, the number of optical irregularities in each of the fourth regions may be three or fewer. The number of optical irregularities in each of the fourth regions may be two or fewer.

[0192] In addition, the number of optical irregularities in each third region may be three or fewer. The number of optical irregularities in each third region may be two or fewer.

[0193] In addition, the number of optical irregularities in each second region may be three or fewer. The number of optical irregularities in each second region may be two or fewer.

[0194] Additionally, the number of optical irregularities in the first region (1-1) may be three or fewer. The number of optical irregularities in the first region (1-1) may be two or fewer.

[0195] Additionally, the total number of optical irregularities in the fourth regions (4-1, 4-2 ... 4-24) may be about 1 to about 20. The total number of optical irregularities in the fourth regions (4-1, 4-2 ... 4-24) may be about 3 to about 15.

[0196] Additionally, in the first region (1-1), the second regions (2-1, 2-2 ... 2-8) and the third regions (3-1, 3-2 ... 3-16), the total number of optical irregularities may be 0 to about 15. In the first region (1-1), the second regions (2-1, 2-2 ... 2-8) and the third regions (3-1, 3-2 ... 3-16), the total number of optical irregularities may be 1 to about 10. In the first region (1-1), the second regions (2-1, 2-2 ... 2-8) and the third regions (3-1, 3-2 ... 3-16), the total number of optical irregularities may be 2 to about 7.

[0197] In the above photoresist layer (50), since the thickness distribution is appropriately adjusted by region as described above, the photoresist layer (50) can have a uniform thickness distribution overall.

[0198] In addition, since the density of optical irregularities is appropriately controlled by region in the photoresist layer (50) as described above, the photoresist layer (50) can have a low density of optical irregularities overall.

[0199] Light is selectively irradiated onto the photoresist layer (50), and the light-blocking film is selectively etched to form a light-blocking pattern film (35). Accordingly, as shown in FIG. 9, a photomask (2) comprising the light-transmitting substrate (20) and the light-blocking pattern film (35) disposed on the light-transmitting substrate (20) can be formed.

[0200] The light-blocking pattern film (35) comprises at least one of a transition metal, oxygen, and nitrogen.

[0201] The light-blocking pattern film (35) above can be formed by patterning the light-blocking film (30) of the blank mask (100) described above.

[0202] The description of the physical properties, composition, and structure of the above-mentioned light-blocking pattern film (35) is omitted as it overlaps with the description of the light-blocking film (30) of the blank mask (1).

[0203] A semiconductor device manufacturing method according to an embodiment comprises: a preparation step of arranging a semiconductor wafer coated with a light source, a photomask (2), and a resist film; an exposure step of selectively transmitting light incident from the light source through the photomask (2) onto the semiconductor wafer and emitting it; and a development step of developing a pattern on the semiconductor wafer.

[0204] The above photomask (2) includes a light-transmitting substrate (20) and a light-blocking pattern film (35) disposed on the light-transmitting substrate (20).

[0205] The light-blocking pattern film (35) comprises a transition metal and at least one of oxygen, nitrogen, and carbon.

[0206] In the above preparation step, the light source is a device capable of generating short-wavelength exposure light. The exposure light may be light with a wavelength of 200 nm or less. The exposure light may be ArF light with a wavelength of 193 nm.

[0207] A lens may be additionally disposed between the photomask (2) and the semiconductor wafer. The lens has the function of reducing the circuit pattern shape on the photomask (2) and transferring it onto the semiconductor wafer. The lens is not limited to any type that can be generally applied to the ArF semiconductor wafer exposure process. For example, the lens may be a lens composed of calcium fluoride (CaF2).

[0208] In the above exposure step, exposure light can be selectively transmitted onto the semiconductor wafer through the photomask (2). In this case, chemical degradation may occur in the part of the resist film where the exposure light is incident.

[0209] In the above development step, a semiconductor wafer that has completed the photolithography step can be treated with a developing solution to develop a pattern on the semiconductor wafer. If the applied resist film is a positive resist, the portion of the resist film where exposure light is incident can be dissolved by the developing solution. If the applied resist film is a negative resist, the portion of the resist film where exposure light is not incident can be dissolved by the developing solution. Through the treatment with the developing solution, the resist film is formed into a resist pattern. A pattern can be formed on the semiconductor wafer using the above resist pattern as a mask.

[0210] The description of the above photomask (2) is omitted as it overlaps with the previous content.

[0211] A method for manufacturing a blank mask according to an embodiment includes the step of maintaining a state in which a photoresist composition is filled inside a nozzle (520) that sprays the photoresist composition. Additionally, a method for manufacturing a blank mask according to an embodiment includes the step of removing the photoresist composition inside the nozzle (520). Accordingly, residue attached inside the nozzle (520) can be easily removed.

[0212] Accordingly, the blank mask manufacturing method according to the embodiment can prevent the residue (513) from entering the photoresist layer (50).

[0213] Accordingly, the blank mask according to the embodiment can reduce the number of optical irregularities (52, 53) that may be caused by the residue, etc. The blank mask according to the embodiment is 30 pieces / 36 inches 2The above optical irregularities (52, 53) may be included in less than

[0214] Accordingly, the method for manufacturing a blank mask according to the embodiment can realize a photoresist layer (50) having overall optical flatness. Accordingly, the photoresist layer (50) can precisely pattern the light-blocking film.

[0215] The blank mask according to the embodiment may include a photoresist layer (50) with high overall thickness uniformity. Accordingly, the photoresist layer (50) can be precisely patterned during the exposure and development process. Accordingly, the blank mask according to the embodiment can precisely pattern a light-blocking film and provide a precise photomask.

[0216] In particular, in the blank mask according to the embodiment, the photoresist layer (50) may have a relatively thicker outer region. That is, the process conditions are adjusted so that the outer region of the photoresist layer (50) is formed to be relatively slightly thicker, so that the photoresist layer (50) may have a uniform thickness overall.

[0217] Additionally, the process for forming the photoresist layer (50) may include first to sixth rotation steps. Accordingly, the photoresist layer (50) may have a uniform thickness overall. Also, since the photoresist layer (50) is formed by the above process, it may have a relatively slightly thicker outer region.

[0218] Additionally, the photoresist layer (50) may include optical irregularities. In particular, the photoresist layer (50) may be formed so that the optical density in the outer region is higher. Accordingly, the photoresist layer (50) can reduce the number of optical irregularities overall.

[0219] In particular, the blank mask according to the embodiment is 30 pieces / 36 inches2 The above optical irregularities may be included in less than

[0220] Accordingly, the method for manufacturing a blank mask according to the embodiment can realize a photoresist layer (50) having overall optical flatness. Accordingly, the photoresist layer (50) can precisely pattern the light-blocking film.

[0221] In particular, the photoresist layer (50) has the same number of optical irregularities detected by a 532 nm laser as described above, so it can be precisely developed by ultraviolet light.

[0222] Accordingly, a photomask having a precise pattern of a blank mask according to an embodiment can be provided.

[0223] Accordingly, the blank mask according to the embodiment can reduce the number of optical irregularities (52, 53) that may be caused by the residue (513), etc. The blank mask according to the embodiment is 30 pieces / 36 inches 2 The above optical irregularities (52, 53) may be included in less than

[0224] Accordingly, the method for manufacturing a blank mask according to the embodiment can realize a photoresist layer (50) having overall optical flatness. Accordingly, the photoresist layer (50) can precisely pattern the light-blocking film.

[0225] Accordingly, a photomask having a precise pattern of a blank mask according to an embodiment can be provided.

[0226] The blank mask manufacturing apparatus and manufacturing method according to the embodiment can provide a blank mask having improved performance.

[0227] Although preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements by those skilled in the art using the basic concept of the present invention as defined in the following claims also fall within the scope of the present invention.

[0228] Preparation Example

[0229] Photoresist composition #1

[0230] FEP171 solution (FUJIFILM Arch Co, Ltd) was used, and PGMEA (propylene glycol monomethyl ether acetate) and PGME (propylene glycol monomethyl ether) were used as solvents in an 8:2 ratio. Additionally, the solid content of the FEP171 solution was approximately 8.5 wt%. The viscosity of the FEP171 solution was approximately 3 cP.

[0232] Photoresist composition #2

[0233] XFP255 solution (FUJIFILM Arch Co, Ltd) was used, and PGMEA (propylene glycol monomethyl ether acetate) and PGME (propylene glycol monomethyl ether) were used as solvents in an 8:2 ratio. Additionally, the solid content of the XFP255 solution was approximately 6.5 wt%. The viscosity of the XFP255 solution was approximately 1.5 cP.

[0235] Example 1

[0236] A quartz substrate having a size of approximately 6 inches × approximately 6 inches is used, and the quartz substrate has a thickness of 0.25 inches. On the quartz substrate, a MoSi film with a thickness of approximately 800 Å and a Cr film with a thickness of approximately 700 Å are formed by a sputtering process. Subsequently, the quartz substrate with the formed MoSi and Cr films is placed on a chuck.

[0237] After the FEP171 solution was dropped onto the quartz substrate from a nozzle at a height of about 0.5 cm, the quartz substrate was rotated for about 3 seconds at a temperature of about 23°C at a speed of about 50 rpm (Step 1). Subsequently, the quartz substrate was rotated for 5 seconds at a temperature of about 23°C at a speed of about 80 rpm (Step 2), for 8 seconds at a temperature of about 23°C at a speed of about 100 rpm (Step 3), for 1 second at a temperature of about 23°C at a speed of about 2200 rpm (Step 4), and for 3 seconds at a temperature of about 23°C at a speed of about 1750 rpm (Step 5).

[0238] Afterwards, the quartz substrate was rotated at a speed of about 300 rpm at a temperature of about 23°C for about 40 seconds (step 6).

[0239] Accordingly, an optical substrate with a photoresist layer formed thereon was manufactured.

[0240] Examples 2 to 5 and Comparative Examples

[0241] As shown in Tables 1 and 2 below, the nozzle height, resist composition, and coating conditions were adjusted. For the remaining process, reference was made to Example 1.

[0242] division Resist composition Nozzle height (cm) Step 1 (seconds, rpm, ℃) Step 2 (seconds, rpm, ℃) Example 1 #1 point is also 3cP 0.5 3 sec 50 rpm 23℃ 5 seconds 80 rpm 23℃ Example 2 #1 point is also 3cP 1.0 3 sec 50 rpm 23℃ 5 seconds 80 rpm 23℃ Example 3 #1 point is also 3cP 0.5 3 sec 50 rpm 23℃ 5 seconds 80 rpm 23℃ Example 4 #2 viscosity is 1.5cP 0.5 3 sec 50 rpm 23℃ 5 seconds 80 rpm 23℃ Example 5 #2 viscosity is 1.5cP 1.0 3 sec 50 rpm 23℃ 5 seconds 80 rpm 23℃ Example 6 #1 point is also 3cP 0.5 3 sec 50 rpm 23℃ 5 seconds 80 rpm 23℃ Example 7 #1 point is also 3cP 0.5 3 sec 50 rpm 23℃ 5 seconds 80 rpm 23℃ Example 8 #2 viscosity is 1.5cP 0.5 3 sec 50 rpm 23℃ 5 seconds 80 rpm 23℃ Example 9 #2 viscosity is 1.5cP 0.5 3 sec 50 rpm 23℃ 5 seconds 80 rpm 23℃

[0243] division 3 steps (seconds, rpm, ℃) Step 4 (seconds, rpm, ℃) 5 steps (sec, rpm, ℃) 6 steps (sec, rpm, ℃) Example 1 8 seconds 100 rpm 23℃ 1 second 2200 rpm 23℃ 3 seconds 1750 rpm 23℃ 40 seconds 300 rpm 23℃ Example 2 8 seconds 100 rpm 23℃ 1 second 2000 rpm 23℃ 3 seconds 1750 rpm 23℃ 40 seconds 300 rpm 23℃ Example 3 8 seconds 100 rpm 23℃ 1 second 2400 rpm 23℃ 3 seconds 1850 rpm 23℃ 40 seconds 200 rpm 23℃ Example 4 8 seconds 100 rpm 23℃ 1 second 1000 rpm 23℃ 3 seconds 900 rpm 23℃ 40 seconds 300 rpm 23℃ Example 5 8 seconds 100 rpm 23℃ 1 second 950 rpm 23℃ 3 sec 850 rpm 23℃ 40 seconds 200 rpm 23℃ Example 6 4 seconds 100 rpm 23.5℃ 1 second 2200 rpm 23.5℃ 3 seconds 1750 rpm 23℃ 40 seconds 200 rpm 23℃ Example 7 8 seconds 100 rpm 23℃ 1.5 seconds 1800 rpm 23℃ 3 seconds 1550 rpm 23℃ 40 seconds 200 rpm 23℃ Siritye 8 4 seconds 100 rpm 23.5℃ 1 second 1000 rpm 23.5℃ 3 seconds 900 rpm 23℃ 40 seconds 200 rpm 23℃ Example 9 8 seconds 100 rpm 23℃ 1.5 seconds 900 rpm 23℃ 3 seconds 650 rpm 23℃ 40 seconds 200 rpm 23℃

[0244] Evaluation example

[0245] 1. Resist layer thickness

[0246] The above resist layer was divided into 7 equal intervals in the horizontal and vertical directions, respectively, resulting in a total of 49 regions. The thickness of each region in the above resist layer was measured. To measure the thickness, a spectroscopic ellipsometer (Manufacturer: Nano-View (Nano-View CO., LTD, Trademark: MG-PRO) was used.

[0247] 2. Number of optical irregularities

[0248] In the optical substrates prepared in the examples and comparative examples, the number of optical irregularities in each region of the resist layer was measured by an optical surface inspection device (LASERTEC M6641S). The optical irregularities have a diameter of 0.01 μm to 10 μm.

[0249] As shown in Table 3 below, the thickness of the resist layer prepared in Example 1 was measured in 49 regions. In Table 3, with reference to Figure 8, each region was divided into columns and rows, and the unit was Å.

[0250] division 1A 2A 3A 4A 5A 6A 7A 1B 3017.4 3017.1 3015.4 3017.5 3022.4 3013.3 3020.9 2B 3019.4 3021.2 3017.0 3013.2 3009.4 3013.6 3022.3 3B 3016.2 3013.5 3012.6 3014.7 3013.3 3006.6 3014.6 4B 3015.5 3014.5 3007.6 3005.4 3008.6 3010.6 3016.9 5B 3019.3 3013.6 3007.9 30 15.4 3010.6 3015.7 3015.4 6B 3020.2 3013.6 3016.5 3014.9 3007.4 3013.3 3015.1 7B 3011.0 3016.5 3020.1 3015.0 3014.8 3011.7 3010.1

[0251] As shown in Table 4 below, the thickness of the resist layer prepared in Example 2 was measured in 49 regions. In Table 4, with reference to Figure 8, each region was divided into columns and rows, and the unit was Å.

[0252] division 1A 2A 3A 4A 5A 6A 7A 1B 3125.5 3125.2 3133.0 3124.7 3136.7 3125.9 3123.0 2B 3133.2 3126.4 3121.8 3130.0 3126.8 3129.2 3121.5 3B 3129.2 3125.4 3120.5 3129.2 3122.3 3123.9 3127.6 4B 3127.1 3124.0 3120.1 3130.2 3129.7 3125.1 3128.1 5B 3127.1 3123.6 3123.6 3118.0 3127.4 3119.2 3120.1 6B 3126.8 3127.1 3127.3 3124.5 3117.5 3125.0 3124.9 7B 3130.3 3125.7 3128.4 3124.2 3124.1 3126.6 3120.4

[0253] As shown in Table 5 below, the thickness of the resist layer prepared in Example 3 was measured in 49 regions. In Table 5, with reference to Figure 8, each region was divided into columns and rows, and the unit was Å.

[0254] division 1A 2A 3A 4A 5A 6A 7A 1B 2867.0 2875.7 2869.2 2870.6 2870.2 2871.6 2871.7 2B 2873.5 2875.4 2867.2 2869.0 2873.5 2869.8 2876.0 3B 2869.8 2872.3 2868.3 2871.5 2867.8 2869.5 2870.8 4B 2872.9 2871.6 2870.8 2877.4 2871.4 2870.1 2871.4 5B 2873.3 2871.0 2868.9 2870.4 2868.4 2870.2 2877.3 6B 2871.1 2871.9 2868.0 2870.3 2872.7 2871.9 2878.3 7B 2872.0 2869.1 2877.2 2869.6 2871.4 2869.6 2871.2

[0255] As shown in Table 6 below, the thickness of the resist layer prepared in Example 4 was measured in 49 regions. In Table 6, with reference to Figure 8, each region was divided into columns and rows, and the unit was Å.

[0256] division 1A 2A 3A 4A 5A 6A 7A 1B 1352.0 1348.2 1343.8 1345.0 1342.2 1341.2 1352.7 2B 1349.3 1347.5 1343.9 1344.6 1341.6 1346.4 1343.9 3B 1346.9 1339.2 1341.4 1345.5 1345.3 1341.8 1340.2 4B 1344.8 1343.3 1345.4 1350.2 1343.3 1343.5 1338.9 5B 1343.3 1345.5 1341.9 1344.4 1340.1 1342.9 1340.9 6B 1350.1 1347.8 1346.3 1345.3 1343.8 1343.9 1344.6 7B 1353.4 1346.5 1344.9 1343.4 1342.0 1345.0 1349.5

[0257] As shown in Table 7 below, the thickness of the resist layer prepared in Example 5 was measured in 49 regions. In Table 7, with reference to Figure 8, each region was divided into columns and rows, and the unit was Å.

[0258] division 1A 2A 3A 4A 5A 6A 7A 1B 1376.1 1367.3 1362.9 1361.5 1361.5 1366.4 1370.1 2B 1367.3 1365.4 1366.5 1359.8 1360.8 1362.9 1366.2 3B 1366.2 1364.1 1362.4 1367.0 1363.1 1364.6 1362.4 4B 1366.0 1364.8 1367.6 1375.9 1367.3 1360.5 1360.9 5B 1363.4 1359.4 1364.3 1358.2 1362.6 1363.4 1360.5 6B 1372.4 1363.5 1365.3 1371.7 1372.5 1364.0 1367.8 7B 1372.8 1367.1 1371.6 1365.2 1364.2 1366.6 1371.0

[0259] As shown in Table 8 below, the thickness of the resist layer prepared in Example 6 was measured in 49 regions. In Table 8, with reference to Figure 8, each region was divided into columns and rows, and the unit was Å.

[0260] division 1A 2A 3A 4A 5A 6A 7A 1B 3022.2 3024.7 3016.3 3009.8 3015.2 3020.6 3026.4 2B 3013.3 3012.4 3007.1 3012.0 3007.3 3012.1 3015.1 3B 3011.2 3017.5 3002.9 3005.2 2998.9 3014.5 3010.3 4B 3008.4 3016.3 3009.1 3018.5 3007.4 3011.0 3009.9 5B 3014.9 3014.9 3013.1 3009.9 2998.9 3010.1 3015.2 6B 3017.3 3010.6 3012.5 3007.5 3009.4 3012.1 3013.6 7B 3013.4 3023.7 3012.6 3013.1 3016.4 3014.8 3010.6

[0261] As shown in Table 9 below, the thickness of the resist layer prepared in Example 7 was measured in 49 regions. In Table 9, with reference to Figure 8, each region was divided into columns and rows, and the unit was Å.

[0262] division 1A 2A 3A 4A 5A 6A 7A 1B 3142.2 3141.2 3156.2 3146.4 3140.4 3142.9 3139.4 2B 3135.6 3140.1 3143.6 3155.7 3149.3 3146.5 3143.7 3B 3136.3 3135.7 3137.7 3165.9 3152.8 3152.8 3140.8 4B 3162.5 3169.2 3151.7 3131.5 3164.7 3156.1 3149.6 5B 3146.9 3150.2 3159.7 3134.8 3128.5 3145.0 3140.8 6B 3141.3 3144.6 3149.8 3150.0 3143.1 3138.7 3136.2 7B 3140.7 3145.3 3148.3 3147.3 3139.4 3137.8 3134.5

[0263] As shown in Table 10 below, the thickness of the resist layer prepared in Example 8 was measured in 49 regions. In Table 10, with reference to Figure 8, each region was divided into columns and rows, and the unit was Å.

[0264] division 1A 2A 3A 4A 5A 6A 7A 1B 1344.6 1338.1 1334.6 1338.3 1326.6 1335.3 1337.9 2B 1338.9 1342.4 1334.6 1340.5 1336.7 1338.1 1339.0 3B 1336.7 1339.2 1337.5 1320.3 1320.0 1336.1 1329.7 4B 1329.6 1333.5 1329.0 1337.4 1337.5 1337.8 1329.8 5B 1335.1 1335.2 1323.0 1340.8 1337.7 1339.2 1331.8 6B 1338.3 1343.3 1334.3 1337.9 1337.2 1336.8 1338.4 7B 1341.9 1334.4 1334.5 1335.9 1337.2 1336.2 1339.5

[0265] As shown in Table 11 below, the thickness of the resist layer prepared in Example 9 was measured in 49 regions. In Table 11, with reference to Figure 8, each region was divided into columns and rows, and the unit was Å.

[0266] division 1A 2A 3A 4A 5A 6A 7A 1B 1517.9 1510.3 1507.2 1507.1 1507.2 1508.8 1513.4 2B 1512.6 1515.3 1514.4 1521.3 1516.0 1510.6 1509.2 3B 1505.8 1514.0 1517.3 1521.8 1524.5 1516.9 1506.9 4B 1509.9 1519.7 1519.1 1531.0 1520.6 1512.1 1497.4 5B 1510.3 1515.2 1515.4 1524.3 1523.1 1511.9 1502.3 6B 1510.5 1517.9 1517.1 1517.2 1515.6 1514.4 1507.2 7B 1511.9 1513.0 1510.6 1509.4 1507.4 1507.0 1513.4

[0267] As shown in Table 12 below, the number of optical irregularities in the resist layer prepared in Example 1 was measured in 49 regions. In Table 12, with reference to Figure 8, each region was divided into columns and rows.

[0268] division 1A 2A 3A 4A 5A 6A 7A 1B 1 1 1 2B 1 2 3B 1 1 1 4B 2 5B 6B 2 1 2 7B 2 1

[0269] As shown in Table 13 below, the number of optical irregularities in the resist layer prepared in Example 2 was measured in 49 regions. In Table 13, with reference to Figure 8, each region was divided into columns and rows.

[0270] division 1A 2A 3A 4A 5A 6A 7A 1B 1 1 2B 1 1 3B 1 1 1 4B 2 1 5B 1 6B 2 1 2 7B 3 1 1

[0271] As shown in Table 14 below, the number of optical irregularities in the resist layer prepared in Example 3 was measured in 49 regions. In Table 14, with reference to Figure 8, each region was divided into columns and rows.

[0272] division 1A 2A 3A 4A 5A 6A 7A 1B 2 1 2B 1 3B 1 1 4B 1 1 5B 1 6B 2 7B 1 2 1

[0273] As shown in Table 15 below, the number of optical irregularities in the resist layer prepared in Example 4 was measured in 49 regions. In Table 15, with reference to Figure 8, each region was divided into columns and rows.

[0274] division 1A 2A 3A 4A 5A 6A 7A 1B 1 2 2B 1 3B 1 1 4B 1 5B 1 6B 1 1 7B 1

[0275] As shown in Table 16 below, the number of optical irregularities in the resist layer prepared in Example 5 was measured in 49 regions. In Table 16, with reference to Figure 8, each region was divided into columns and rows.

[0276] division 1A 2A 3A 4A 5A 6A 7A 1B 2 1 2B 1 3B 2 1 4B 1 5B 1 1 1 6B 2 1 7B 2 1

[0277] As shown in Table 17 below, the number of optical irregularities in the resist layer prepared in Example 6 was measured in 49 regions. In Table 17, with reference to Figure 8, each region was divided into columns and rows.

[0278] division 1A 2A 3A 4A 5A 6A 7A 1B 2 1 1 2 2B 3 1 2 2 3B 1 2 4B 2 5B 1 1 1 6B 3 1 1 7B 3 1 1

[0279] As shown in Table 18 below, the number of optical irregularities in the resist layer prepared in Example 7 was measured in 49 regions. In Table 18, with reference to Figure 8, each region was divided into columns and rows.

[0280] division 1A 2A 3A 4A 5A 6A 7A 1B 1 2 2 2B 1 1 1 1 1 1 3B 1 1 4B 1 1 2 5B 1 1 1 1 1 6B 1 2 7B 1 1 1 2

[0281] As shown in Table 19 below, the number of optical irregularities in the resist layer prepared in Example 8 was measured in 49 regions. In Table 19, Figure 8 is referenced, and each region is divided into columns and rows.

[0282] division 1A 2A 3A 4A 5A 6A 7A 1B 2 3 1 1 2B 2 1 1 1 1 3B 1 4B 5B 1 1 1 1 1 6B 2 1 7B 1 2 4 2 1

[0283] As shown in Table 20 below, the number of optical irregularities in the resist layer prepared in Example 9 was measured in 49 regions. In Table 20, with reference to Figure 8, each region was divided into columns and rows.

[0284] division 1A 2A 3A 4A 5A 6A 7A 1B 1 1 2B 1 1 1 1 1 3B 1 1 2 4B 5B 1 1 1 1 6B 1 1 7B 2 2 1 3 3

[0285] As shown in Tables 12 to 20, the photoresist layer according to the examples included a small number of optical irregularities. Explanation of the symbols

[0286] Optical substrate (10) shading screen (30) photoresist layer (50) Flat section (51) Optical surface (52, 53)

Claims

Claim 1 A light-transmitting substrate; a light-shielding film disposed on the light-transmitting substrate; and a photoresist layer disposed on the light-shielding film, wherein the photoresist layer comprises 49 regions that are divided into 7 equal intervals in the horizontal direction and divided into 7 equal intervals in the vertical direction, wherein the thickness variation in the 49 regions is less than 100 Å, and the 49 regions comprise a first region corresponding to the center of the light-transmitting substrate; second regions disposed along the periphery of the first region; and third regions disposed along the periphery of the second regions. A blank mask comprising fourth regions corresponding to the outer edge of the light-transmitting substrate, wherein the average thickness in the fourth regions is 3 Å to 10 Å greater than the average thickness in the third regions, the average thickness in the fourth regions is 3 Å to 10 Å greater than the average thickness in the second regions, the average thickness in the first region is 3 Å to 10 Å greater than the average thickness in the second regions, and the average thickness in the first region is 3 Å to 10 Å greater than the average thickness in the third regions. Claim 2 delete Claim 3 delete Claim 4 delete Claim 5 delete Claim 6 delete Claim 7 The method comprises the steps of: forming an optical substrate including a light-shielding film disposed on a transparent substrate; and forming a photoresist layer on the light-shielding film while rotating the optical substrate; wherein the step of forming the photoresist layer comprises: a first rotation of the optical substrate; a second rotation of the optical substrate at a speed faster than the first rotation; a third rotation of the optical substrate at a speed faster than the second rotation; a fourth rotation of the optical substrate at a speed faster than the third rotation; and a fifth rotation of the optical substrate at a speed slower than the fourth rotation. and includes the step of rotating the optical substrate a sixth time at a speed slower than the fifth time, wherein the photoresist layer comprises 49 regions that are divided into 7 equal intervals in the horizontal direction and divided into 7 equal intervals in the vertical direction, the thickness variation in the 49 regions is less than 100 Å, and the 49 regions comprise a first region corresponding to the center of the optical substrate; second regions arranged along the periphery of the first region; and third regions arranged along the periphery of the second regions. A method for manufacturing a blank mask comprising: fourth regions corresponding to the outer edge of the optical substrate, wherein the average thickness in the fourth regions is 3 Å to 10 Å greater than the average thickness in the third regions, the average thickness in the fourth regions is 3 Å to 10 Å greater than the average thickness in the second regions, the average thickness in the first region is 3 Å to 10 Å greater than the average thickness in the second regions, and the average thickness in the first region is 3 Å to 10 Å greater than the average thickness in the third regions. Claim 8 A method for manufacturing a blank mask according to claim 7, wherein the first rotational speed is 30 rpm to 70 rpm, the second rotational speed is 50 rpm to 100 rpm, the third rotational speed is 70 rpm to 140 rpm, the fourth rotational speed is 800 rpm to 3000 rpm, the fifth rotational speed is 500 rpm to 2500 rpm, and the sixth rotational speed is 100 rpm to 500 rpm. Claim 9 A method for manufacturing a blank mask according to claim 7, wherein the first rotation step, the second rotation step, the third rotation step, the fourth rotation step, the fifth rotation step, and the sixth rotation step are carried out at a temperature of 20°C to 30°C. Claim 10 A method for manufacturing a blank mask according to claim 7, wherein the fourth rotation step is performed for 0.5 to 2 seconds.

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