Capacitor structure
KR103019604B1Active Publication Date: 2026-09-16WINBOND ELECTRONICS CORP
Patent Information
- Application Number
- KR1020240120509
- Authority / Receiving Office
- KR · KR
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2024-02-02
- Filing Date
- 2024-09-05
- Publication Date
- 2026-09-16
- Estimated Expiration
- 2044-09-05
Smart Images
Figure R1020240120509_ABST
Abstract
The present invention provides a capacitor structure capable of effectively increasing the capacitance of the capacitor structure. A capacitor structure is provided comprising a first capacitor element structure, a first circuit layer, and at least one second capacitor element structure. The first capacitor element structure includes a first substrate and a plurality of first capacitors. The plurality of first capacitors are located within the first substrate. The first circuit layer is located on the first capacitor element structure. At least one second capacitor element structure is located on the first circuit layer. The second capacitor element structure includes a second substrate and a plurality of second capacitors. The plurality of second capacitors are located within the second substrate. The plurality of first capacitors and the plurality of second capacitors are connected in parallel through the first circuit layer.
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Citation Information
Patent Citations
Thin film condenser, thin film condenser built-in typehigh density mounting substrate, and method formanufacturing thin film condenser
KR1020050041993A
Capacitor and method for manufacturing same
KR1020140042482A