Heater assembly and substrate processing apparatus having the same

Abstract

The present invention relates to a heater assembly and a substrate processing device including the same, and more specifically, to a heater assembly that generates heat using an induction current and a substrate processing device including the same. The present invention discloses a heater assembly comprising: a body part (100) forming an internal space (S1); an induction coil (200) installed in the internal space (S1) and receiving power from the outside to form a magnetic field; a support shaft part (300) connected to the lower part of the body part (100) to support the body part (100); and a heating part (400) positioned on the upper side of the body part (100) such that a substrate (1) is placed on its upper surface, the planar outer diameter is smaller than or equal to the planar outer diameter of the body part (100), and the thickness is greater than or equal to the skin depth value, which is the depth of the surface layer where heat is generated in the induction heating target during induction heating and is determined by the magnetic field frequency formed by the induction coil (200).

Description

Technology Field

[0001] The present invention relates to a heater assembly and a substrate processing device including the same, and more specifically, to a heater assembly that generates heat using an induction current and a substrate processing device including the same. Background Technology

[0002] A substrate processing device is a device that performs specific substrate processing, such as deposition, etching, and heat treatment, on a substrate, and is configured in various ways depending on the type of substrate processing.

[0003] As an example, a substrate processing device may be configured to include a process chamber forming a sealed processing space and a heater assembly installed inside the processing space to support a substrate and apply heat to the supported substrate.

[0004] Conventional heater assemblies use a heating element that generates heat by applying power or a heat medium that generates heat by supplying a heat medium. However, in this case, since the heating element must be connected to an external power source or receive a heat medium from the outside, there is a problem in that there are limitations to installing it close to a substrate supported on the upper surface.

[0005] As a result, the gap between the heating element and the substrate widens, leading to a problem where the heat transfer efficiency to the substrate decreases and the time and energy consumed to reach the target temperature increase.

[0006] To improve upon these problems, an induction heating heater has been proposed in which a heating element supporting a substrate is brought closest to the substrate, and an induced current is directly applied to the heating element through electromagnetic induction from an induction coil spaced apart from the bottom.

[0007] However, this induction heating method entails the problem of heat generation in the induction coil to which power is applied. Since the induction coil is typically made of copper (Cu) material, if copper atoms leak out due to the heat generated by the coil itself, it can cause contamination inside the heater assembly or process chamber, which can have a fatal impact on the quality of the substrate.

[0008] To prevent such contamination problems, a structure may be applied in which an induction coil is sealed inside a housing and a susceptor heated by the electromagnetic induction of the induction coil is placed above it.

[0009] In this structure, the upper part of the housing covering the induction coil (top plate) and the susceptor placed on top of it must have opposite characteristics with respect to the magnetic field generated from the induction coil.

[0010] Specifically, the top plate of the housing must isolate the induction coil from contaminants while allowing the magnetic field to pass through smoothly.

[0011] To this end, the housing can be manufactured from a material that is not easily heated by a magnetic field, but even with such a material, if it exceeds a certain thickness, unwanted eddy currents may be induced by a strong magnetic field, causing parasitic heating.

[0012] Therefore, the housing, particularly the top plate of the housing, must be formed very thinly to suppress such parasitic heating and efficiently transmit the magnetic field to the susceptor.

[0013] On the other hand, the susceptor must effectively absorb this magnetic field energy to generate heat, but if the thickness of the susceptor in this structure is too thin, the magnetic field cannot sufficiently link with the susceptor and passes through it, resulting in a significant decrease in heat generation efficiency.

[0014] However, if the susceptor is manufactured to be unconditionally thick to increase heating efficiency, its self-weight increases excessively, placing a structural burden on the housing top plate, which is designed to be thin to avoid parasitic heating. Furthermore, as the thermal mass of the susceptor increases, heating performance issues arise again, such as a slower rate of temperature rise to the target temperature and difficulty in precise temperature control.

[0015] Therefore, under the premise that the induction coil must be isolated from the source of contamination and the thin thickness of the housing top plate must be maintained, there is a technical difficulty in determining the optimized thickness of the susceptor that can simultaneously satisfy the conflicting requirements of reduced magnetic field linkage, reduced self-weight, and reduced heating performance. The problem to be solved

[0016] The objective of the present invention is to provide a heater assembly having a structure capable of improving the heating efficiency of a susceptor and a substrate processing device including the same, in order to solve the above-mentioned problems. means of solving the problem

[0017] The present invention is created to achieve the above-mentioned purpose of the present invention, and the present invention provides a heater assembly comprising: a body part (100) forming an internal space (S1); an induction coil (200) installed in the internal space (S1) and receiving power from the outside to form a magnetic field; a support shaft part (300) connected to the lower part of the body part (100) to support the body part (100); and a heating part (400) positioned on the upper side of the body part (100) such that a substrate (1) is placed on its upper surface, the planar outer diameter is smaller than or equal to the planar outer diameter of the body part (100), and the thickness is greater than or equal to the penetration depth (Skin depth) value determined by the magnetic field frequency formed by the induction coil (200) as the depth of the surface layer where heat is generated in the induction heating target during induction heating.

[0018] When a magnetic field is formed at a frequency of 20 kHz to 200 kHz in the induction coil (200), the thickness of the heating part (400) can be formed to be 10 mm or less.

[0019] The above body part (100) may include a body main body (110) having an open upper side and receiving the induction coil (200); and a lead part (120) coupled to the upper side of the body main body (110) to form the internal space (S1).

[0020] The planar outer diameter of the heating part (400) is formed to be smaller than the planar outer diameter of the body part (100), and the lead part (120) may include a lead step portion (121) that extends upward along the edge and surrounds the heating part (400).

[0021] The thickness of the heating portion (400) may be formed to be greater than or equal to the thickness of the lead portion (120).

[0022] The heating element (400) may be positioned on the inner side of the plane than the coil positioned on the outermost plane among the induction coils (200).

[0023] The thickness of the heating portion (400) may be formed to be greater than or equal to the thickness of the lead portion (120).

[0024] The above body part (100) has an open upper side and accommodates the induction coil (200) inside, and the heating part (400) can be coupled to the upper side of the body part (100) to form an internal space (S1) together with the body part (100).

[0025] The heating element (400) may include at least one of graphite and silicon carbide (SiC).

[0026] The edge of the heating element (400) may have a substrate guide portion (410) formed therein that extends upward and surrounds a substrate mounting area (B) on which the substrate (1) is mounted in the central part of the plane.

[0027] The above substrate guide part (410) may be formed to be equal to or higher than the height of the substrate (1) mounted in the substrate mounting area (B).

[0028] The above substrate guide part (410) can be formed such that the angle formed by the inner surface of the substrate guide part (410) with the upper surface of the substrate mounting area (B) is 90 degrees or more.

[0029] The heating element (400) may have a plurality of substrate support protrusions (420) formed thereon that protrude from the upper surface of the substrate mounting area (B) where the substrate (1) is mounted and support the substrate (1).

[0030] The heating element (400) can be fitted along the edge of the body part (100).

[0031] The heating element (400) includes at least one bottom protrusion (430a) protruding along the bottom edge, and the body part (100) may have an upper groove (121a) into which the bottom protrusion (430a) is inserted.

[0032] The above body part (100) includes at least one upper surface protrusion (121b) protruding along the upper edge surface, and the heating part (400) may have a lower surface groove (430b) into which the upper surface protrusion (121b) is inserted.

[0033] The planar outer diameter of the heating element (400) can be formed to be the same as the planar outer diameter of the body part (100).

[0034] The heating element (400) can be installed in close contact with the upper surface of the body part (100).

[0035] At least a portion of the heating element (400) may be installed spaced apart from the upper surface of the body part (100).

[0036] The upper surface of the body part (100) may have at least one protruding support part (122) formed thereon to support the heating part (400).

[0037] An insulating layer (150) may be installed between the heating element (400) and the body element (100).

[0038] The present invention provides a substrate processing device characterized by comprising: a process chamber (10) forming a processing space (S2) inside; a gas injection unit (20) provided above the processing space (S2) for injecting a process gas for substrate processing into the processing space (S2); and a heater assembly (30) installed opposite the gas injection unit (20) in the processing space (S2) to support a substrate (1) to be processed. Effects of the invention

[0039] The heater assembly according to the present invention and the substrate processing device including the same have the advantage of simultaneously improving substrate heating efficiency and structural stability by optimizing the thickness of the heating element disposed on the upper side of the body portion where the induction coil is installed, and improving the associated diameter and arrangement structure.

[0040] In addition, the heater assembly according to the present invention and the substrate processing device including the same have the advantage of significantly increasing heating efficiency by minimizing the self-weight and heat capacity of the heating part itself and maximizing magnetic field linkage by setting the thickness of the heating part to be greater than the effective heating thickness (Skin depth) value according to the magnetic field frequency of the induction coil and at the same time limiting the thickness of the heating part to a preset thickness.

[0041] In addition, the heater assembly according to the present invention and the substrate processing device including the same have the advantage of reducing the structural burden applied to the lead portion of the thin body, while simultaneously enabling a rapid speed of reaching the target temperature and precise temperature control.

[0042] In addition, the heater assembly according to the present invention and the substrate processing device including the same have the advantage of improving the overall energy efficiency of the system by maximizing the heating efficiency of the heating part while suppressing parasitic heating phenomena of the housing, by setting the thickness of the heating part to be equal to or greater than the thickness of the lead part of the body part formed thinly for magnetic field transmission.

[0043] In addition, the heater assembly according to the present invention and the substrate processing device including the same have the advantage of stably seating the substrate and improving the assembly precision and structural stability of the heater assembly by forming a substrate guide portion at the edge of the heating portion or installing the heating portion and the body portion with various coupling structures (e.g., snap-fit ​​coupling, protruding support portion, etc.). Brief explanation of the drawing

[0044] FIG. 1 is a cross-sectional view schematically showing a substrate processing apparatus according to the present invention. FIG. 2 is a cross-sectional view showing part A of the heater assembly illustrated in FIG. 1 in detail. FIG. 3 is a plan view showing the heating portion of the heater assembly illustrated in FIG. 2, and an enlarged cross-sectional view showing the substrate guide portion and the substrate support protrusion formed in the heating portion. FIG. 4 is a cross-sectional view showing another embodiment of the heater assembly illustrated in FIG. 2, and is an enlarged cross-sectional view showing various embodiments of a structure in which a heating element and a lead element are in contact and joined. FIG. 5 is a cross-sectional view showing another embodiment of the heater assembly illustrated in FIG. 2, and is a cross-sectional view for showing another embodiment of a structure in which a body and a heating element are combined to form an internal space. Specific details for implementing the invention

[0045] The substrate processing apparatus according to the present invention will be described below with reference to the attached drawings.

[0046] A substrate processing device according to the present invention comprises, as shown in FIG. 1, a process chamber (10) that forms a processing space (S2) inside; a gas injection unit (20) provided on the upper part of the process chamber (10) for injecting a process gas for substrate processing into the processing space (S2); and a heater assembly (30) installed opposite the gas injection unit (20) in the processing space (S2) to support a substrate (1) to be processed.

[0047] In addition, the substrate processing device according to the present invention may further include an exhaust unit (40) for exhausting the processing space (S2).

[0048] Here, the substrate (1) subject to substrate processing can be any configuration that requires substrate processing such as etching, deposition, or heat treatment, and for example, a wafer for semiconductor manufacturing can be applied.

[0049] The above process chamber (10) is configured to form a processing space (S2) inside, and various configurations are possible.

[0050] Here, the processing space (S2) can be configured in various ways as long as it is a space capable of performing substrate processing by heating the substrate (1) through an induction heating type heater assembly (30) to be described later.

[0051] Preferably, it may be a space for performing a thermal process that controls the process with thermal energy through an induction heating type heater assembly (30) to be described later.

[0052] For example, the processing space (S2) may perform processes such as a process applying remote plasma, or processes that do not use plasma at all, such as Thermal Atomic Layer Deposition (ALD), Atomic Layer Rejuvenation (ALR), and Thermal Atomic Layer Etching (ALE).

[0053] In addition, since the heater assembly (30) of the present invention can efficiently and stably heat the substrate (1) even in a high temperature range of 600°C or higher, it can be particularly usefully applied to processes where very high temperature heat treatment is essential, such as the epitaxy process.

[0054] Additionally, the process chamber (10) may include a chamber body (11) with an open upper side and an upper lead (12) detachably coupled to the opening of the chamber body (11).

[0055] Additionally, the process chamber (10) may further include a gate (14) formed on one side and opened and closed to introduce and remove a substrate (1) into and out of the processing space (S2).

[0056] At this time, the gate (14) is a structure formed on the side wall of the chamber body (11) for introducing and removing the substrate (1) into the processing space (S2), and various structures are possible.

[0057] The upper lead (12) above is configured to be installed on the upper surface of the chamber body (11), and may have an opening formed in the center so that the gas injection part (20) described later can be installed through it.

[0058] At this time, the upper lead (12) may have an insulating member (13) installed between it and the gas injection part (20) for electrical insulation with the gas injection part (20).

[0059] In addition, the process chamber (10) may have an exhaust port formed for pressure control and exhaust within the processing space (S2), together with a gas injection unit (20) for supplying process gas for substrate processing.

[0060] At this time, the exhaust unit (40) is connected to a pump installed in the exhaust port and provided externally, thereby enabling exhaust and pressure control for the processing space (S2).

[0061] The above gas injection unit (20) is configured to be provided above the processing space (S2) and to inject process gas for substrate processing into the processing space (S2), and various configurations are possible.

[0062] For example, the gas injection unit (20) may be seated and coupled to the upper lead (12) to form a sealed processing space (S2) together with the chamber body (11), and may inject process gas introduced from the outside into the processing space (S2).

[0063] Meanwhile, the gas injection unit (20) may be electrically connected to ground or have an RF power source applied to it to form a potential difference with the heater assembly (30) described later, as needed.

[0064] The heater assembly (30) may be configured to be installed opposite the gas injection part (20) in the processing space (S2) and to support the substrate (1) being processed.

[0065] At this time, the heater assembly (30) can not only simply support the substrate (1) but also apply heat to the substrate (1) to form a process temperature, and can move the substrate (1) closer to or further away from the gas injection unit (20) through a lifting drive.

[0066] Meanwhile, since induction heating methods using induction coils can cause problems such as heat generation and copper (Cu) contamination of the induction coil itself, a structure in which the induction coil is sealed inside the housing may be applied to prevent these problems.

[0067] In this case, a trade-off may be formed between the thickness of the upper part of the housing that transmits the magnetic field and the thickness of the susceptor that generates heat on that upper part.

[0068] In other words, the housing, especially the upper part of the housing, must be formed thinly so that it does not react to the magnetic field of the induction coil and allows it to pass through smoothly upward, thereby suppressing unwanted eddy currents and parasitic heating phenomena caused by the magnetic field. In addition, the susceptor must effectively absorb (link) the magnetic field energy that passes through the housing and generate heat.

[0069] This heating efficiency is directly related to the 'skin depth,' which is determined by the magnetic field frequency of the induction coil and the permeability and resistivity of the susceptor material.

[0070] Here, skin depth refers to the effective depth of the surface layer where heat can mainly be generated in the conductor during induction heating.

[0071] Specifically, if the thickness (T1) of the susceptor is thinner than the penetration depth (Skin Depth), the magnetic field cannot sufficiently intersect the susceptor and passes through it, causing a problem in which the heating efficiency decreases rapidly.

[0072] Therefore, in order to effectively heat the substrate (1), the thickness (T1) of the susceptor must be designed to be greater than at least the penetration depth value.

[0073] However, if the thickness (T1) of the susceptor is designed to be thick based on the 'penetration depth' to ensure heat generation efficiency, the self-weight and thermal capacity of the susceptor may inevitably increase excessively.

[0074] This increased weight of the susceptor places a structural burden on the upper part of the housing, which must be formed thinly, potentially causing deformation or breakage during high-temperature processes.

[0075] Furthermore, the increased heat capacity slows down the heater's responsiveness, reducing the rate of heating to the target temperature and hindering precise temperature control during the process, which leads to problems with the heating performance itself.

[0076] To solve these problems, the heater assembly according to the present invention may include: a body part (100) that forms an internal space (S1) directly or indirectly; an induction coil (200) that is installed in the internal space (S1) and forms a magnetic field by receiving power from the outside; a support shaft part (300) that is connected to the lower part of the body part (100) and supports the body part (100); and a heating part (400) that is positioned on the upper side of the body part (100) and has a substrate (1) placed on its upper surface, wherein the planar outer diameter is smaller than or equal to the planar outer diameter of the body part (100), and the thickness is greater than or equal to the skin depth value, which is the depth of the surface layer where heat is generated in the induction heating target during induction heating and is determined by the magnetic field frequency formed by the induction coil (200).

[0077] The above body part (100) may be configured to serve as a type of housing that isolates the induction coil (200), which will be described later, from the processing space (S2) of the process chamber (10) to prevent contamination and forms an internal space (S1) in which the induction coil (200) is accommodated.

[0078] To explain further, the body part (100) can directly or indirectly form an internal space (S1) to accommodate the induction coil (200) in the internal space (S1), while also supporting the heating part (400) to be described later on the upper side of the body part (100).

[0079] According to one embodiment, the body portion (100) may directly form the internal space (S1) through the configuration of the body portion (100) itself, by including a body main body (110) having an open upper side and receiving the induction coil (200); and a lead portion (120) coupled to the upper side of the body main body (110) to form the internal space (S1).

[0080] According to another embodiment, the body portion (100) is composed only of a body body (110) in which the upper side is open and the induction coil (200) is received, and a heating portion (400) to be described later is coupled to the upper side of the body portion (100) so that the body portion (100) and the heating portion (400) together form an internal space (S1).

[0081] That is, the body part (100) can indirectly form the internal space (S1) together with the heating part (400).

[0082] The above internal space (S1) may be a space formed inside the body part (100) to seal the induction coil (200) to be described later.

[0083] At this time, if the configuration allows the induction coil (200) to be received and fixed in the internal space (S1), it is possible to form it in various forms, such as fixing the induction coil (200) through a separate fixing member or forming a seating groove on the inner side of the body part (100) where the induction coil (200) can be seated.

[0084] In particular, the body part (100) serving as a housing is preferably formed of a material that is not easily heated by the magnetic field frequency band generated by the induction coil (200), that is, has low magnetic / electrical loss.

[0085] For example, the body part (100) may be formed of a high-purity ceramic or insulating material such as AlN (aluminum nitride), Al2O3 (alumina), or quartz.

[0086] The body part (100) formed of such a material does not react to a magnetic field in the frequency band for induction heating, thereby preventing unwanted heat generation.

[0087] In addition, the material of the body part (100) can be selected in combination to have thermal properties required according to process conditions, namely thermal insulation that effectively blocks heat from the high-temperature heating part (400) or thermal conductivity that releases heat to the outside of the chamber.

[0088] In particular, in an embodiment in which the body part (100) is composed of a body body (110) and a lead part (120) to directly form the internal space (S1), the lead part (120) is positioned between the lower induction coil (200) and the upper heating part (400) and can perform the role of a transparent window that transmits the magnetic field generated from the induction coil (200) to the heating part (400).

[0089] If the lead portion (120) becomes thicker than a certain thickness, even if it is a material with low magnetic field loss such as Al2O3 or Quartz, eddy currents may be induced in it, causing unwanted heating, i.e., 'parasitic heating'.

[0090] Such parasitic heating can block or weaken the magnetic field energy that should be transferred to the heating unit (400), thereby wasting energy and potentially lowering the heating efficiency of the heating unit (400).

[0091] Therefore, it is preferable that the lead portion (120) be formed with a thickness as thin as possible to suppress such parasitic heating and improve magnetic field transmittance.

[0092] Meanwhile, in the case where the body part (100) indirectly forms an internal space (S1), the body part (100) is composed only of a body body (110) with an open upper side, and a heating part (400) is directly coupled to the upper side so that the body part (100) and the heating part (400) together form an internal space (S1).

[0093] In this case, an insulating layer (150) may be installed on the bottom surface of the heating element (400) to block heat transfer from the high-temperature heating element (400) to the lower induction coil (200).

[0094] At this time, the insulating layer (150) formed on the bottom surface of the heating part (400) is interposed between the induction coil (200) and the heating part (400), and can perform the role of a 'magnetic field transparent window' similar to the lead part (120) described above.

[0095] Accordingly, the above-mentioned insulation layer (150) is also preferably formed with a thickness as thin as possible within the limits of securing the required insulation performance, in order to transmit magnetic field energy to the heating element (400) without loss and prevent parasitic heating phenomena itself.

[0096] Meanwhile, the induction coil (200) may be installed in the internal space (S1) of the body part (100) and may be configured to form a magnetic field through electromagnetic induction by receiving high-frequency power from the outside.

[0097] For example, the induction coil (200) may be composed of a Litz wire made of copper (Cu) material with low resistance, and its shape may be of various types, such as a solid type or a tube type with a hollow interior through which refrigerant can flow.

[0098] In addition, the induction coil (200) can be arranged in various patterns according to the desired heating distribution of the substrate (1) within the internal space (S1).

[0099] At this time, the relationship between the arrangement pattern of the induction coil (200) and the size of the heating element (400) can have an important effect on the heating efficiency.

[0100] For example, the heating element (400) may be positioned on the inner side of the plane than the coil positioned on the outermost plane among the induction coils (200).

[0101] That is, if the induction coil (200) is composed of a single spiral coil, the coil positioned at the outermost edge of the plane may refer to the coil located at the outermost edge of the spiral coil.

[0102] At this time, by placing the heating element (400) inside the final coil, the magnetic field generated by the coil is prevented from leaking or radiating outward, and all energy can be concentrated toward the heating element (400).

[0103] Additionally, if the induction coil (200) is composed of a multi-zone coil or a multi-layer coil separated into a plurality of zones to control the radial temperature uniformity of the substrate (1), the coil positioned at the outermost edge on the plane may refer to the coil located at the outermost edge of the coil responsible for heating the outermost region among them.

[0104] Likewise, by placing the heating element (400) inside the final coil, the magnetic field generated by the coil is prevented from leaking or radiating outward, and all energy can be concentrated toward the heating element (400).

[0105] If the heating element (400) extends outward in a plane beyond the outermost induction coil (200), it attempts to heat unnecessarily to an area where magnetic field linkage is difficult, which may delay the heating time and waste energy.

[0106] Accordingly, by placing the heating element (400) inside the outermost induction coil, magnetic field energy can be concentrated on the heating element (400), achieving rapid and uniform heating and improving energy efficiency.

[0107] This can be usefully applied whether the induction coil (200) is single-zone or multi-zone.

[0108] For example, the induction coil (200) may be configured as a single coil to heat the entire area of ​​the heating part (400) collectively, or configured as a plurality of coils to perform independent temperature control for a plurality of zones separated based on the substrate (1) placed on the heating part (400).

[0109] In addition, it can also be applied to a multi-process that processes two or more substrates (1), i.e., multiple wafers, simultaneously within a single processing space (S2) of the process chamber (10).

[0110] In this case, the heater assembly (30) may be configured to include a plurality of heating elements (400) equal to the number of substrates (1) to be processed.

[0111] In this multi-process structure, each heating element (400) can be individually heated by an independent induction coil (200).

[0112] At this time, heating may be controlled collectively by applying the same magnetic field frequency to the induction coil (200) corresponding to all heating parts (400), and preferably, a magnetic field of a different frequency or power may be applied to each heating part (400).

[0113] This is advantageous for improving process uniformity by individually correcting minute temperature deviations that may occur depending on the process conditions or position within the chamber of each substrate (1) and enabling the implementation of an independent and precise temperature profile for each substrate (1).

[0114] In addition, the induction coil (200) can be designed with various turn counts depending on the characteristics of the required magnetic field.

[0115] In addition, the induction coil (200) can form an alternating magnetic field of tens of kHz to hundreds of kHz depending on the applied power.

[0116] For example, when the induction coil (200) heats the heating part (400), it generates a magnetic field of 10 kHz to 200 kHz, and power of 1 to 10 kW can be applied to the induction coil (200).

[0117] At this time, the characteristics of the magnetic field formed by the induction coil (200), particularly the frequency, may have a close interdependent relationship with the thickness by being linked to the penetration depth (Skin Depth) of the heating part (400) that absorbs the magnetic field energy.

[0118] Accordingly, an optimal combination of the magnetic field frequency formed by the induction coil (200) and the thickness of the heating part (400) can be formed.

[0119] For example, when a magnetic field in the range of 20 kHz to 200 kHz is formed in the induction coil (200), the thickness (T1) of the heating part (400) can be formed with a thickness of 10 mm or less in consideration of heating efficiency and weight reduction.

[0120] Conversely, if the thickness of the heating element (400) is formed to be 10 mm or less, the induction coil (200) may be configured to form a magnetic field in the range of 20 kHz to 200 kHz in response.

[0121] Meanwhile, the support shaft portion (300) is connected to the lower part of the body portion (100) and can support the body portion (100) by penetrating the lower part of the process chamber (10) and positioning the body portion (100) at a predetermined location within the processing space (S2).

[0122] In addition, the support shaft portion (300), in addition to a simple support function, can serve as a key passage for connecting various components of the induction coil (200) and heater assembly (30) installed in the internal space (S1) of the body portion (100) to components installed outside the process chamber (10).

[0123] Accordingly, the support shaft portion (300) can be formed in the shape of a hollow shaft.

[0124] For example, the power transmission line (51) of the power application unit (50), the temperature measurement line (61) of the temperature measurement unit (60), and the refrigerant transmission path (71) of the refrigerant unit (70) may be arranged together inside the support shaft unit (300).

[0125] The above power application unit (50) may be configured to apply high-frequency power to the induction coil (200) to form a magnetic field.

[0126] For example, the power supply unit (50) may include a power converter (52) disposed outside the process chamber (10) and converting commercial power (AC) into high-frequency AC power required for the present invention; and a power transmission line (51) that transmits the high-frequency power converted by the power converter (52) to the induction coil (200).

[0127] At this time, the power transmission line (51) can electrically connect the power conversion device (52) outside the chamber and the induction coil (200) inside the chamber space (S1) through the interior of the support shaft part (300).

[0128] The above temperature measuring unit (60) may be configured to measure the temperature of the heating unit (400) or the substrate (1) placed on the heating unit (400), and to control the amount of heat generated by the heater assembly (30) based on the measured temperature.

[0129] The above temperature measuring unit (60) may include, for example, a temperature sensor (not shown) installed inside or on the upper surface of the heating unit (400) to directly detect the temperature, a temperature measuring line (61) through which the signal of the temperature sensor (not shown) is transmitted to the outside of the process chamber (10) or power is transmitted, and a temperature control unit (62) that receives the signal, monitors the temperature, and feedback controls the output of the power supply unit (50).

[0130] At this time, the temperature measuring wire (61) can also connect the temperature sensor (not shown) inside the chamber and the external temperature control unit (62) through the inside of the support shaft part (300).

[0131] The above refrigerant unit (70) can be installed to remove resistance heat generated by the resistance of the induction coil (200) itself, thereby suppressing the temperature rise of the induction coil (200) and ensuring stable operation.

[0132] The above refrigerant section (70) may include, for example, a refrigerant supply section (72) disposed outside the process chamber (10) to maintain and circulate a cooling fluid at a constant temperature, and a refrigerant transfer path (71) that circulates the refrigerant between the refrigerant supply section (72) outside the chamber and the induction coil (200) in the internal space (S1).

[0133] At this time, the refrigerant transfer path (71) can be installed via the interior of the support shaft portion (300).

[0134] Additionally, the support shaft portion (300) may be configured to drive the body portion (100) up and down.

[0135] For example, the heater assembly (30) can be moved by the support shaft portion (300) between a substrate transfer position where the substrate (1) is transferred through the gate (14) of the process chamber (10) and a process position where actual substrate processing is performed near the gas injection portion (20).

[0136] To implement this, the lower end of the support shaft (300) may be mechanically connected to a lifting / lowering drive unit (not shown) installed outside the process chamber (10), and the drive unit may be configured in various ways, such as a linear motor, or a combination of a servo motor and a ball screw, to provide precise vertical driving force to the support shaft (300).

[0137] Additionally, at the point where the support shaft (300) penetrates the lower part of the process chamber (10), a bellows (not shown) may be installed to allow the support shaft (300) to move up and down while isolating the vacuum or process atmosphere of the processing space (S2) from the outside and sealing it.

[0138] Meanwhile, the heating element (400) may be configured to substantially heat the substrate (1) by being positioned on the upper side of the body part (100) and having the substrate (1) placed on its upper surface.

[0139] That is, the heating element (400) can heat the substrate (1) on the upper surface by absorbing magnetic field energy that has passed through the lead portion (120) of the body portion (100) or the insulating layer (150) formed on the bottom surface of the heating element (400) in the form of an induced current.

[0140] Accordingly, the heating element (400) can be formed of a material suitable for induction heating and highly resistant to high-temperature process environments and process gases.

[0141] For example, the heating element (400) may include at least one of graphite and silicon carbide (SiC).

[0142] Specifically, the heating element (400) may be formed of graphite, silicon carbide (SiC) coated with graphite, SiC bulk, or a composite material including these materials.

[0143] Meanwhile, a highly corrosive cleaning gas such as NF3 may be used to remove deposition byproducts remaining inside the process chamber (10) after the substrate processing is completed or during periodic maintenance.

[0144] In addition, some processes can be performed under a plasma environment.

[0145] The cleaning gas or plasma generated during the process may directly react with the bulk material of the heating element (400), such as graphite or SiC, and etch or damage the surface of the heating element (400).

[0146] This reaction not only reduces the durability of the heating element (400), but also causes particles due to reaction byproducts, which contaminate the processing space (S2) and can cause fatal defects in the yield of the substrate (1).

[0147] To prevent such problems, a protective coating layer may be additionally formed on the surface of the heating element (400), particularly on the upper surface where the substrate (1) is placed and directly exposed to the process gas.

[0148] The above coating layer is preferably formed of a ceramic material having high resistance to cleaning gas and plasma, that is, plasma resistance and chemical resistance.

[0149] For example, such a ceramic coating layer may include YOF (Yttrium Oxyfluoride), Al2O3 (alumina), or PBN (Pyrolytic Boron Nitride), etc., to prevent reaction with the base material of the heating element (400) and extend the lifespan of the part.

[0150] In addition, the heating element (400) may be formed of a material capable of effectively absorbing the magnetic field generated by the induction coil (200) as described above, and may also be formed to effectively absorb the magnetic field energy of the induction coil (200) to generate heat.

[0151] In particular, the absorption efficiency of the magnetic field energy can be determined according to the thickness (T1) of the heating element (400).

[0152] Accordingly, the heating element (400) can be formed with a preset thickness.

[0153] Here, the preset thickness can be set to satisfy two conflicting requirements simultaneously.

[0154] First, in order to secure heating efficiency, the heating element (400) may be formed to be greater than or equal to the penetration depth (Skin depth) value determined by the magnetic field frequency formed by the induction coil (200).

[0155] In other words, skin depth refers to the depth of the surface layer where actual heat is generated in a conductor by an alternating magnetic field during induction heating.

[0156] This penetration depth (Skin depth, δ) is determined by the intrinsic resistance (ρ), permeability (μ) of the heating element (400) material and the magnetic field frequency (f) of the induction coil (200), and the relationship is as follows:

[0157]

[0158] As can be seen from the above formula, there is an inverse relationship in which the penetration depth (δ) decreases as the magnetic field frequency (f) increases, and conversely, the penetration depth (Skin depth, δ) increases as the frequency (f) decreases.

[0159] If the thickness of the heating element (400) is thinner than this penetration depth (Skin depth, δ), the magnetic field linkage decreases, and the heating efficiency drops sharply.

[0160] Therefore, the thickness of the heating element (400) must be greater than or equal to the penetration depth (δ) value.

[0161] Secondly, in order to ensure structural stability and heating performance, the heating element (400) must be prevented from becoming excessively thick.

[0162] If the heating element (400) is made unnecessarily thick to increase heating efficiency based on penetration depth, the self-weight increases, which can place a serious structural burden on the lower lead part (120) or insulation layer (150) that must be formed thinly to avoid parasitic heating.

[0163] In addition, since an increase in thickness inevitably entails an increase in heat capacity, this slows down the responsiveness of the heating element (400), thereby reducing the rate of heating to the target temperature and potentially causing problems that impair performance in processes requiring rapid and precise temperature control.

[0164] Ultimately, the thickness of the heating element (400) can be set to a value between an optimal upper limit (e.g., 10 mm or less) that is greater than the minimum thickness (penetration depth) required to secure heating efficiency, while not causing problems with self-weight and heat capacity.

[0165] Here, as an embodiment satisfying both conflicting conditions, the induction coil (200) may be configured to form a magnetic field in a frequency range of 20 kHz to 200 kHz.

[0166] This frequency band may be an optimal range that prevents surface heating concentration phenomena occurring at high frequencies of 200 kHz or higher, and at the same time suppresses parasitic heating problems of the lead portion (120) caused by excessive penetration depth at low frequencies of less than 20 kHz.

[0167] At this time, corresponding to the frequency band of 20 kHz to 200 kHz, the thickness (T1) of the heating element (400) may be formed to be greater than or equal to the penetration depth (Skin depth) for the corresponding frequency and smaller than 10 mm.

[0168] Preferably, a frequency band of 30 kHz to 60 kHz can be used to secure the fastest heating speed, and in this case, the thickness of the heating element (400) can be formed to be greater than or equal to the penetration depth (Skin depth) for the corresponding frequency and less than 10 mm.

[0169] In particular, as described above, when a configuration is adopted in which the heating element (400) is transported outside the chamber together with the substrate (1), the weight of the heating element (400) can be a condition that directly affects the design of the transport system.

[0170] That is, an excessively heavy heating element (400) can place a heavy mechanical burden on the transfer mechanism or make high-speed or precise transfer difficult.

[0171] Accordingly, in the embodiment of the heating element being transported, the thickness (T1) of the heating element (400) can be formed to be thinner, for example, 3 mm or less, to facilitate mechanical transport.

[0172] This can be an optimized design value to satisfy the minimum penetration depth required for induction heating while simultaneously meeting the constraint of lightweighting required for transport.

[0173] Meanwhile, in addition to the core role of supplying heat to the substrate (1) through induction heating, the heating element (400) can simultaneously perform the role of a support so that the substrate (1) can be directly placed on its upper surface and substrate processing can be performed.

[0174] To this end, a substrate mounting area (B) on which a substrate (1) to be processed is placed may be provided on the upper surface of the heating element (400), particularly in the central part of the planar surface.

[0175] The above substrate mounting area (B) may be formed as a circular flat area having an outer diameter larger than or at least equal to the outer diameter of the substrate (1), so as to correspond to the shape and size of the substrate (1), which is typically circular.

[0176] Additionally, a substrate guide portion (410) extending upward and dividing the perimeter of the substrate mounting area (B) may be formed at the edge of the heating portion (400).

[0177] That is, the substrate guide portion (410) can be formed in a ring shape protruding along the upper edge of the heating portion (400), and can be formed in a structure that surrounds the entire perimeter of the substrate mounting area (B) with its inner surface.

[0178] The above substrate guide part (410) can guide the substrate (1) to the substrate mounting area (B) and at the same time perform the role of a guide to prevent the substrate (1) from moving away from the substrate mounting area (B) during the process.

[0179] Furthermore, depending on the operation method, there may be cases where the heating element (400) is transported together with the substrate (1) to the outside of the process chamber (10) while the substrate (1) is seated.

[0180] In such cases, there is a risk that the substrate (1) on the flat heating element (400) may slide or detach from the substrate mounting area (B) due to vibration or sudden movement during the transfer process.

[0181] Accordingly, the substrate guide part (410) can perform the role of a pocket structure that not only prevents detachment during the process but also physically restrains and supports the side of the substrate (1) during the transfer process of the heating part (400).

[0182] That is, the substrate guide part (410) can provide the advantage of effectively preventing the substrate (1) from slipping and significantly improving the reliability of the transfer process by stably fixing the substrate (1) on the heating part (400) through a wall extended upward.

[0183] Accordingly, it is preferable that the extended height of the substrate guide part (410) be formed to be higher than or at least equal to the thickness of the substrate (1) that is seated in the substrate seating area (B) inside, i.e., the height of the substrate (1).

[0184] Accordingly, the substrate guide portion (410) can be formed to surround not only the substrate mounting area (B) but also the side edge of the substrate (1) mounted in the substrate mounting area (B).

[0185] Additionally, during the process of placing the substrate (1) into the substrate mounting area (B) via a transfer robot (not shown), if the edge of the substrate (1) strikes the inner surface of the substrate guide part (410) protruding upward, there is a risk of causing damage or breakage to the substrate (1).

[0186] Accordingly, in order to prevent such problems and induce smooth seating of the substrate (1), the substrate guide part (410) may be formed in an inclined shape along its inner circumferential surface, that is, the surface facing the substrate (1).

[0187] For example, the inner surface of the substrate guide part (410) may be formed to be inclined such that the angle formed with the upper surface of the substrate mounting area (B) is 90 degrees or more, that is, an obtuse angle.

[0188] Furthermore, the inner surface of the substrate guide part (410) has a shape that slopes toward the upper side in a direction away from the center of the substrate mounting area (B), so that when the substrate (1) is mounted, even if the edge of the substrate (1) hits the inner surface, it can be guided to slide naturally and be guided to the bottom of the substrate mounting area (B).

[0189] Meanwhile, if the bottom surface of a general substrate (1) is processed into a very flat surface and the top surface of the substrate mounting area (B) is also formed into a flat surface with high flatness for uniform heating of the substrate (1), a phenomenon of adhesion may occur during mounting and detachment of the substrate (1), particularly during the unloading process after a high-temperature process.

[0190] Accordingly, the heating element (400) may additionally have a plurality of substrate support protrusions (420) that protrude at a predetermined height from the upper surface of the substrate mounting area (B) on which the substrate (1) is mounted and support the substrate (1).

[0191] That is, the substrate support protrusion (420) can be formed in a shape such as finely embossed on the flat surface of the substrate mounting area (B).

[0192] The plurality of substrate support protrusions (420) can be configured to prevent the substrate (1) from making direct surface contact with the entire upper surface of the substrate mounting area (B) and to support it by point contact only at the upper end of the protrusions.

[0193] Consequently, the plurality of substrate support protrusions (420) form a fine gap between the upper surface of the substrate mounting area (B) and the lower surface of the substrate (1), thereby minimizing the actual contact area between the lower surface of the substrate (1) and the upper surface of the heating element (400), which effectively prevents the aforementioned sticking phenomenon.

[0194] Additionally, the substrate support protrusion (420) can be formed as a protrusion structure of various angles and shapes capable of supporting the substrate (1), such as a round hemispherical shape, a square column, a cone, or a radial rib structure, provided that it is a protrusion structure capable of stably supporting the substrate (1).

[0195] Furthermore, the fine gap between the bottom surface of the substrate (1) and the top surface of the substrate mounting area (B) formed by the substrate support protrusion (420) can perform an additional function as a flow path for smoothly supplying or discharging purge gas, etc. to the bottom surface of the substrate (1).

[0196] To this end, the plurality of substrate support protrusions (420) can be arranged in a shape and pattern that does not obstruct the gas flow between the upper surface of the substrate mounting area (B) and the substrate (1).

[0197] In addition, to further facilitate this gas flow, a plurality of grooves for gas flow may be additionally formed on the upper surface of the substrate mounting area (B), separate from the substrate support protrusion (420).

[0198] Meanwhile, since a substrate (1) is placed on the upper surface of the heating unit (400) and a process is performed, a means may be required to smoothly load and unload the substrate (1) onto the heating unit (400) before and after the process.

[0199] To this end, a plurality of lift pins (not shown) that are typically driven to move up and down through the heating element (400) from the bottom of the process chamber (10) may be installed.

[0200] In order for the above lift pin (not shown) to freely pass through the heating part (400) to support or lower the upper substrate (1), a plurality of lift pin holes (440) that penetrate in the vertical direction corresponding to the above lift pin (not shown) may be formed in the heating part (400).

[0201] The above lift pin (not shown) can rise through the lift pin hole (440) to a substrate transfer position located above the substrate mounting area (B) of the heating unit (400), and receive the substrate (1) from the transfer robot (not shown) or lift the substrate (1) and transfer it to the transfer robot.

[0202] In addition, the lift pin (not shown) can perform a drive to safely lower and settle the supported substrate (1) onto the substrate mounting area (B) of the heating unit (400) when lowered.

[0203] Hereinafter, various structural embodiments in which the heating element (400) of the heater assembly (30) of the present invention is coupled to the body part (100) will be described in detail.

[0204] According to one embodiment, as shown in FIG. 2, the planar outer diameter (r1) of the heating element (400) may be formed to be smaller than the planar outer diameter (r2) of the body part (100).

[0205] Here, 'planar outer diameter' refers to the diameter of the shape forming the outermost boundary when viewing the member from the top to the bottom.

[0206] This structure can be applied when the body part (100) directly forms an internal space (S1) by including the body main body (110) and the lead part (120) as described above.

[0207] In this case, the lead portion (120) may include a lead step portion (121) that extends upward along its edge and surrounds the outer edge of the heating portion (400).

[0208] That is, the upper surface of the lead portion (120) may be configured to form a seating surface in the center thereof where the bottom surface of the heating portion (400) is seated, and the lead step portion (121) protrudes upward along the edge of the seating surface, thereby forming a pocket structure in which the heating portion (400) can be inserted and seated therein.

[0209] Accordingly, the heating element (400) is seated on the upper surface of the lead portion (120), and at the same time, its side can be surrounded by the inner surface of the lead step portion (121).

[0210] This pocket structure can serve to restrict the heating element (400) from moving horizontally on the lead element (120).

[0211] This allows for improved assembly precision and prevents displacement caused by vibrations or different thermal expansions between parts during the process, thereby allowing the heating element (400) to be mechanically and stably fixed.

[0212] At this time, the height at which the lead step portion (121) extends upward can be set in various ways.

[0213] For example, the height of the lead step portion (121) may be formed to be equal to or greater than the thickness including the substrate guide portion (410) of the heating portion (400).

[0214] Specifically, the upper height of the lead step portion (121) may be formed to be equal to or higher than the upper height of the substrate guide portion (410) formed in the heating portion (400).

[0215] This allows the lead step portion (121) to perform not only a mechanical fixing function that limits the horizontal movement of the heating portion (400), but also an additional function as a shield or guide that protects the side of the heating portion (400) from a thermal or chemical environment during the process, or controls the gas flow or heat transfer path between the heating portion (400) and the processing space (S2).

[0216] In addition, as described above, it is preferable that the thickness (T1) of the heating element (400) be determined in close correlation with the thickness (T2) of the lead element (120) and the characteristics of the magnetic field formed in the induction coil (200).

[0217] At this time, the lead portion (120) acts as a transparent window that transmits the magnetic field formed in the lower induction coil (200) to the upper heating portion (400). In order to improve the magnetic field transmittance and to suppress the parasitic heating phenomenon in which unwanted eddy currents are induced in the lead portion (120) due to magnetic field loss, it is preferable for the lead portion (120) to be formed with a thickness as thin as possible within the limits allowed by the material.

[0218] On the other hand, since the heating element (400) must effectively absorb magnetic field energy that has passed through the lead element (120) to generate heat, it must secure a minimum thickness greater than or equal to the penetration depth (Skin depth) value determined by the magnetic field frequency of the induction coil (200) as described above.

[0219] Under these conditions, one embodiment of the present invention may form the thickness (T1) of the heating portion (400) to be greater than or equal to the thickness (T2) of the lead portion (120), which is formed relatively thin to suppress parasitic heating.

[0220] This allows for increased heating efficiency by improving magnetic field linkage in the heating part (400), which acts as a heating element, while minimizing energy loss in the lead part (120).

[0221] Meanwhile, as shown in FIG. 4 as another embodiment, the planar outer diameter (r1) of the heating element (400) can be formed to be the same as the planar outer diameter (r2) of the body part (100).

[0222] That is, when the outer edges of the heating element (400) and the body element (100) overlap vertically so that they exactly match on a plane, it is difficult to form a pocket structure, such as the lead step portion (121) described above, that is, a side wall structure that prevents horizontal movement of the heating element (400), on the body element (100).

[0223] Accordingly, in order to fix the heating element (400) on the body part (100) and ensure assembly precision even in this structure, a fitting joint structure can be applied in which the edge of the heating element (400) and the edge of the body part (100) interlock and are joined together.

[0224] For example, as illustrated in FIG. 4 (a), the heating element (400) includes at least one bottom protrusion (430a) protruding downward along its bottom edge, and correspondingly, the body part (100) may have an upper groove (121a) formed on its upper edge where the bottom protrusion (430a) is inserted and coupled.

[0225] The above-mentioned bottom protrusion (430a) and top groove (121a) may be formed in a continuous ring shape along the entire circumference of the heating element (400), or they may be formed at multiple locations along the circumference for stable fixation and ease of assembly.

[0226] Conversely, as illustrated in FIG. 4 (b), the body portion (100) may include at least one upper surface protrusion (121b) protruding upward along its upper edge surface, and correspondingly, the heating portion (400) may have a lower surface groove (430b) formed on its lower edge surface into which the upper surface protrusion (121b) is inserted and coupled.

[0227] This interlocking structure can precisely fix the horizontal position of the heating element (400) and the body part (100), and at the same time, serve as a guide to determine the relative rotational position of the two parts during assembly.

[0228] This can be particularly useful when the lift pin hole (440) formed in the heating element (400) must be accurately aligned with the path of a lift pin (not shown) that moves up and down through a lower structure.

[0229] At this time, the body part (100) is typically formed of a ceramic material such as AlN or Al2O3, and the heating part (400) is formed of a material such as graphite or SiC, so they may have different mechanical properties.

[0230] Accordingly, considering ease of processing and mechanical strength, a structure in which a bottom protrusion (430a) is formed on the heating part (400) side, which has relatively superior strength and is easy to process, and an upper groove (121a) is formed on the body part (100) side may be more desirable for reducing the risk of part damage.

[0231] Additionally, the heating element (400) is a component that is heated to a high temperature of several hundred °C or higher during the process, whereas the body (100) can maintain a relatively low temperature for cooling the induction coil (200), etc.

[0232] As such, differences in material and temperature conditions result in differences in the coefficient of thermal expansion and the actual rate of thermal expansion between the two components.

[0233] Accordingly, the above protrusions (430a, 121b) and grooves (121a, 430b) are preferably designed to reflect appropriate tolerances that take into account the difference in thermal expansion rates in order to prevent damage caused by excessive thermal stress in a high-temperature process environment or by mutual constraint between parts.

[0234] Meanwhile, as shown in FIG. 4, the entire bottom surface of the heating element (400) can be closely attached and coupled so as to make surface contact with the upper surface of the lead portion (120) of the body portion (100).

[0235] In this case, it is preferable to place the protrusions (430a, 121b) and grooves (121a, 430b) for the aforementioned fitting connection at the outermost edge to minimize the effect on the magnetic field distribution and ensure structural stability.

[0236] That is, the protrusions and grooves (430a, 121b) and grooves (121a, 430b) can be formed in an up-and-down direction in a lower region corresponding to the substrate guide portion (410) formed on the upper surface of the heating portion (400).

[0237] Meanwhile, as previously explained, when the body part (100) indirectly forms the internal space (S1), the body main body (110) and the heating part (400) are combined to form and seal the internal space (S1) in which an induction coil (200) is accommodated.

[0238] In this structure, the heating element (400) can be firmly coupled to the top of the body (110).

[0239] This connection can be formed as a fitting connection structure in which the lower edge of the heating element (400) and the upper edge of the body body (110) interlock with each other, as described in FIG. 4 above. In order to further strengthen the sealing of the internal space (S1) and isolate the internal induction coil (200) from the process space (S2), the heating element (400) and the body body (110) may also be connected through various other connection methods such as ceramic bonding, brazing, or welding.

[0240] However, in this structure, the separate lead portion (120) described in the preceding embodiments (e.g., FIG. 2, FIG. 5) does not exist.

[0241] As a result, the bottom surface of the heating element (400) that generates heat at a high temperature can come into direct contact with the lower induction coil (200) in a state where they are thermally very close.

[0242] Accordingly, in order to protect the induction coil (200) from the high temperature of the heating element (400), an insulating layer (150) may be installed on the bottom surface of the heating element (400).

[0243] The above insulation layer (150) may be formed by directly coating an insulating material onto the bottom surface of the heating element (400), or it may be manufactured as a separate component and then installed on the bottom surface of the heating element (400) by fastening or attaching.

[0244] At this time, the insulation layer (150) is interposed between the heating element (400) and the induction coil (200) and can simultaneously perform the function of an insulating layer that blocks high-temperature heat, as well as a transparent window that transmits the magnetic field of the lower induction coil (200) to the upper heating element (400) without loss.

[0245] Accordingly, the above-mentioned insulation layer (150) is also preferably formed with a material that has low magnetic field loss and suppresses parasitic heating phenomena in the induction heating frequency band, just like the requirements of the aforementioned lead portion (120), and with a thickness as thin as possible within the limits of securing the required insulation performance.

[0247] The foregoing merely describes some preferred embodiments that can be implemented by the present invention. As is well known, the scope of the present invention should not be interpreted as being limited to the above embodiments, and all technical concepts that share the fundamental principles with the technical concept of the present invention described above shall be considered to be included within the scope of the present invention. Explanation of the symbols

[0248] 10: Process Chamber 20: Gas Injection Unit 30: Heater assembly 100: Body part 200: Induction coil 300: Support shaft section 400: Heating element

Claims

Claim 1 A body part (100) forming an internal space (S1); an induction coil (200) installed in the internal space (S1) and receiving power from the outside to form a magnetic field; a support shaft part (300) connected to the lower part of the body part (100) to support the body part (100); and a heating part (400) disposed on the upper side of the body part (100) such that a substrate (1) is placed on its upper surface, and when a magnetic field is formed at a frequency of 20 kHz to 200 kHz in the induction coil (200), the thickness is greater than or equal to a skin depth value determined according to the magnetic field frequency formed in the induction coil (200) as the depth of the surface layer where heat is generated in the induction heating target during induction heating, and the thickness of the heating part (400) is set to be greater than or equal to a skin depth value according to the magnetic field frequency of the induction coil (200), and at the same time, the A heater assembly characterized by being limited to a preset thickness to limit the structural burden applied to the body part (100) due to the self-weight of the heating part (400), wherein the preset thickness is limited to 10 mm or less. Claim 2 delete Claim 3 A heater assembly according to claim 1, wherein the body portion (100) comprises a body main body (110) having an upper side open and receiving the induction coil (200); and a lead portion (120) coupled to the upper side of the body main body (110) to form the internal space (S1). Claim 4 A heater assembly according to claim 3, wherein the planar outer diameter of the heating element (400) is formed to be smaller than the planar outer diameter of the body element (100), and the lead element (120) includes a lead step portion (121) that extends upward along the edge and surrounds the heating element (400). Claim 5 A heater assembly according to claim 4, characterized in that the thickness of the heating portion (400) is formed to be greater than or equal to the thickness of the lead portion (120). Claim 6 A heater assembly according to claim 3, wherein the heating element (400) is positioned inwardly in the plane compared to the coil positioned at the outermost plane among the induction coils (200). Claim 7 A heater assembly according to claim 6, characterized in that the thickness of the heating portion (400) is formed to be greater than or equal to the thickness of the lead portion (120). Claim 8 A heater assembly according to claim 1, wherein the body portion (100) has an open upper side and accommodates the induction coil (200) inside, and the heating portion (400) is coupled to the upper side of the body portion (100) to form an internal space (S1) together with the body portion (100). Claim 9 A heater assembly according to claim 1, wherein the heating element (400) comprises at least one of graphite and silicon carbide (SiC). Claim 10 A heater assembly according to claim 1, characterized in that the edge of the heating element (400) has a substrate guide portion (410) formed therein that extends upward and surrounds a substrate mounting area (B) on which the substrate (1) is mounted in the central part of the plane. Claim 11 A heater assembly according to claim 10, wherein the substrate guide portion (410) is formed to be higher than or equal to the height of the substrate (1) placed in the substrate mounting area (B). Claim 12 A heater assembly according to claim 10, wherein the substrate guide portion (410) is formed such that the angle formed by the inner circumferential surface with the upper surface of the substrate mounting area (B) is 90 degrees or more. Claim 13 A heater assembly according to claim 1, wherein the heating element (400) is formed with a plurality of substrate support protrusions (420) that protrude to the upper surface of a substrate mounting area (B) on which the substrate (1) is mounted and support the substrate (1). Claim 14 A heater assembly according to claim 1, wherein the heating element (400) is fitted and coupled to the edge of the body element (100) along the edge. Claim 15 A heater assembly according to claim 14, wherein the heating element (400) comprises at least one bottom protrusion (430a) protruding along the bottom edge, and the body part (100) is formed with an upper groove (121a) into which the bottom protrusion (430a) is inserted. Claim 16 A heater assembly according to claim 14, wherein the body portion (100) includes at least one upper surface protrusion (121b) protruding along the upper edge surface, and the heating portion (400) is characterized by having a lower surface groove (430b) into which the upper surface protrusion (121b) is inserted. Claim 17 A heater assembly according to claim 14, characterized in that the planar outer diameter of the heating element (400) is formed to be the same as the planar outer diameter of the body element (100). Claim 18 A heater assembly according to claim 1, wherein the heating element (400) is installed in close contact with the upper surface of the body part (100). Claim 19 A heater assembly according to claim 8, characterized in that an insulating layer (150) is installed between the heating element (400) and the body element (100). Claim 20 A substrate processing apparatus characterized by comprising: a process chamber (10) forming a processing space (S2) inside; a gas injection unit (20) provided above the processing space (S2) for injecting process gas for substrate processing into the processing space (S2); and a heater assembly (30) according to any one of claims 1, 3 to 19, installed opposite the gas injection unit (20) in the processing space (S2) to support a substrate (1) to be processed.

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