Transparent conductive film, method of manufacturing same, and thin film transistor and device including same

Abstract

A transparent conductive film comprising a halogen-doped metal chalcogenide compound having a sheet resistance of about 60 ohm / sq. or less at room temperature, a method for manufacturing the same, and a thin-film transistor and device comprising the same are provided.

Description

Technology Field

[0001] The present invention relates to a transparent conductive film, a method for manufacturing the same, and a thin-film transistor and device including the same. Background Technology

[0002] Electronic devices such as flat panel displays like LCDs or LEDs, touch panels, solar cells, and transparent transistors include transparent electrodes. Materials for transparent electrodes are required to have high light transmittance, for example, 70% or more, in the wavelength range of 380 nm to 780 nm, and to have low sheet resistance, for example, 100 ohm / sq. or less, even when manufactured as a thin film.

[0003] Currently used transparent electrode materials include indium tin oxide (ITO), tin oxide (SnO2), and zinc oxide (ZnO). ITO is a type of n-type semiconductor in which oxygen vacancies and electrons are generated by SnO2, and its electrical and optical properties are determined by defects within the crystalline In2O3 structure. Although ITO exhibits satisfactory transmittance properties across the entire visible light range, it displays a sheet resistance of over 100 ohm / sq. when deposited at room temperature. Furthermore, ITO has poor flexibility, and price increases are inevitable due to the limited reserves of indium, necessitating the development of alternative materials. Therefore, there is a need to develop transparent electrode materials capable of exhibiting low sheet resistance while maintaining high light transmittance. The problem to be solved

[0004] One embodiment provides a transparent conductive film having high conductivity, excellent transparency, light transmittance and mechanical properties, and low sheet resistance.

[0005] Another embodiment provides a method for manufacturing a transparent conductive film at low temperature using a low-cost, simple process.

[0006] Another embodiment provides a thin-film transistor comprising the above-described transparent conductive film.

[0007] Another embodiment provides a device comprising the above-mentioned transparent conductive film. means of solving the problem

[0008] According to one embodiment, a transparent conductive film is provided that comprises a halogen-doped metal chalcogenide compound and has a sheet resistance of about 60 ohm / sq. or less at room temperature.

[0009] The above metal chalcogenide compound can be represented by the following chemical formula 1.

[0010] [Chemical Formula 1]

[0011] M x X y

[0012] In the above chemical formula 1, M is selected from transition metals, alkali metals, alkaline earth metals and combinations thereof, X is selected from S, Se, Te and combinations thereof, and x and y are determined by the stoichiometric ratio of M and X.

[0013] In the above chemical formula 1, M can be selected from Cu, Fe, Zn, Co, Mo, W, Li, and combinations thereof.

[0014] The above halogen may be selected from fluorine, chlorine, bromine, iodine, and combinations thereof. The content of the above halogen may be in the range of about 0.30 atomic% to about 0.70 atomic% with respect to the total number of atoms of the transparent conductive film.

[0015] The above transparent conductive film may have a light transmittance of about 80% or more in a wavelength range of 550 nm or more. In addition, the above transparent conductive film may have a sheet resistance increase rate of about 20% or less after 10,000 bending cycles with a radius of curvature of 4 mm or less.

[0016] The carrier density of the above transparent conductive film is approximately 1.0 × 10⁻⁶ 21 cm -3 It could be more than that.

[0017] The work function of the halogen-doped metal chalcogenide compound of the above transparent conductive film may be about 5.2 eV or higher.

[0018] The above transparent conductive film may not contain organic material.

[0019] Another embodiment provides a method for manufacturing a transparent conductive film, comprising the steps of: exposing a metal film to a chalcogen element-containing material to produce a film containing a metal chalcogenide compound; and exposing the film containing the metal chalcogenide compound to a halogen element-containing material to produce a transparent conductive film containing a halogen-doped metal chalcogenide compound.

[0020] The metal film can be exposed to a chalcogen-containing material for about 10 seconds to about 50 seconds.

[0021] The film containing the metal chalcogenide compound can be exposed to a halogen element-containing material for about 10 seconds to about 50 seconds.

[0022] The above manufacturing method may further include a process of heat-treating a transparent conductive film comprising a halogen-doped metal chalcogenide compound.

[0023] The above heat treatment can be carried out at approximately 250°C or lower.

[0024] According to another embodiment, a thin-film transistor comprising the transparent conductive film is provided.

[0025] The thin film transistor comprises a semiconductor thin film, a gate electrode that partially overlaps with the semiconductor thin film, and a source electrode and a drain electrode that are electrically connected to the semiconductor thin film, and the source electrode and the drain electrode may include the transparent conductive film.

[0026] The source electrode and drain electrode comprise a first metal chalcogenide compound, and the semiconductor thin film comprises a second metal chalcogenide compound, and the first metal chalcogenide compound and the second metal chalcogenide compound are doped with a halogen.

[0027] Another embodiment provides a device comprising the aforementioned transparent conductive film or thin-film transistor. Effects of the invention

[0028] The aforementioned transparent conductive film possesses high conductivity, excellent transparency and mechanical properties, and low sheet resistance, so it can be used as a transparent electrode for devices. Furthermore, since it can be fabricated using a simple room-temperature process, it can be formed on a flexible substrate, making it useful for flexible devices. Brief explanation of the drawing

[0029] FIG. 1 is a cross-sectional view illustrating a thin-film transistor according to one embodiment, and FIG. 2 is a cross-sectional view showing an example of a sensor according to one embodiment, and FIG. 3 is a plan view showing an example of an image sensor according to one embodiment, and FIG. 4 is a cross-sectional view showing an example of the image sensor of FIG. 3, and FIG. 5 is a cross-sectional view showing another example of the image sensor of FIG. 3, and FIG. 6 is a cross-sectional view showing another example of the image sensor of FIG. 3, and FIG. 7 is a cross-sectional view showing another example of the image sensor of FIG. 3, and FIG. 8 is a plan view showing another example of an image sensor according to one embodiment, and FIG. 9 is a cross-sectional view showing an example of the image sensor of FIG. 8, and FIG. 10 is a plan view showing another example of an image sensor according to one embodiment, and FIG. 11 is a cross-sectional view showing an example of the image sensor of FIG. 10, and FIG. 12 is a plan view showing an example of a sensor-embedded display panel according to one embodiment, and FIG. 13 is a cross-sectional view showing an example of a sensor-embedded display panel according to one embodiment, and FIG. 14 is a cross-sectional view showing another example of a sensor-embedded display panel according to one embodiment, and FIG. 15 is a schematic diagram illustrating a smartphone as an electronic device according to one embodiment, and FIG. 16 is a schematic diagram illustrating the configuration of an electronic device according to one embodiment, and FIG. 17 is a graph showing the results of X-ray diffraction analysis of a transparent conductive film according to Examples 1-3 before and after iodine doping, and FIG. 18 is a graph showing the sheet resistance measurement results of transparent conductive films according to Examples 1-3 and 1-4, and FIG. 19 is a graph showing the sheet resistance of a film containing CuS nanostructures according to the doping treatment time, and FIG. 20 is a graph showing the change in sheet resistance according to the room temperature storage time of the transparent conductive film according to Examples 1-3, and FIG. 21 is a graph showing the change in sheet resistance according to the number of repeated bending cycles (radius of curvature (R): 4 mm) of a transparent conductive film and an ITO film according to Examples 1-3, and FIG. 22 is a graph showing the change in sheet resistance according to the number of repeated bending cycles (radius of curvature (R): 3 mm) of a transparent conductive film and an ITO film according to Examples 1-3, and Figure 23 is a diagram showing the results of iodine elemental analysis of a thin-film transistor according to Example 2-1 using SEM-EDS (Scanning Electron Microscopy / Energy Dispersive X-Ray Spectroscopy). Specific details for implementing the invention

[0030] The advantages and features of the present invention and the methods for achieving them will become clear by referring to the embodiments described below in detail together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below but may be implemented in various different forms. These embodiments are provided merely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims.

[0031] Accordingly, in some embodiments, well-known technologies are not specifically described to avoid the invention being interpreted ambiguously. Unless otherwise defined, all terms used herein (including technical and scientific terms) may be used in a meaning commonly understood by those skilled in the art to which the invention pertains.

[0032] Also, terms defined in commonly used dictionaries are not interpreted ideally or excessively unless explicitly and specifically defined otherwise.

[0033] When a part of a specification is described as "including" a certain component, unless specifically stated otherwise, this means that it does not exclude other components but may include additional components.

[0034] The thickness was enlarged in the drawing to clearly represent various layers and regions.

[0035] When a part such as a layer, membrane, region, or plate is said to be "on" another part, this includes not only the case where it is "directly on" the other part, but also the case where there is another part in between. Conversely, when a part is said to be "directly on" another part, it means that there is no other part in between.

[0036] In this specification, "room temperature" means a temperature of about 20°C to about 25°C, and "atmospheric pressure" means a pressure of about 1 atm.

[0037] In this specification, "combination" includes a mixture, an alloy, or two or more laminated structures.

[0038] In addition, the singular form includes the plural form unless specifically mentioned otherwise in the phrase.

[0039] A transparent conductive film according to one embodiment is described below.

[0040] A transparent conductive film according to one embodiment comprises a halogen-doped metal chalcogenide compound, and has a sheet resistance of about 60 ohm / sq. or less at room temperature (about 20°C to about 25°C).

[0041] The above metal chalcogenide compound can be represented by the following chemical formula 1.

[0042] [Chemical Formula 1]

[0043] M x X y

[0044] In the above chemical formula 1, M is selected from transition metals, alkali metals, alkaline earth metals, and combinations thereof, X can be selected from S, Se, Te, and combinations thereof, and x and y are determined by the stoichiometric ratio of M and X. For example, x may be in the range of 1 to 2 and y may be in the range of 1 to 3. Specifically, when M is Cu, x is in the range of 1 to 2 and y is 1; when M is Fe, Zn, or Co, x is in the range of 1 to 2 and y is in the range of 1 to 3; when M is Mo or W, x is 1 and y is 2; and when M is Li, x and y are 1.

[0045] The above transition metal refers to an element in which an electron exists in the d-orbital, and may refer to elements of groups 3 to 12 of the periodic table.

[0046] In the above chemical formula 1, M can be selected from Cu, Fe, Zn, Co, Mo, W, Li, and combinations thereof.

[0047] Specific examples of the above metal chalcogenide compounds include CuS, Cu2S, CuSe, Cu2Se, Cu2Se, and CuS1 - z Se z (0 <z<1), CuTe, Cu2Te, FeS, FeS2, Fe2S, FeSe, FeSe2, Fe2Se, FeS1 -z Se z (0 <z<1), FeTe, FeTe2, Fe2Te, ZnS, Zn2S, ZnSe, Zn2Se, ZnS1 - z Se z (0 <z<1), ZnTe, Zn2Te 등을 들 수 있다.

[0048] The above halogen may be selected from fluorine, chlorine, bromine, iodine, and combinations thereof. The content of the above halogen may be about 0.30 atomic% or more, e.g., about 0.35 atomic% or more, or about 0.40 atomic% and about 0.70 atomic% or less, e.g., 0.65 atomic% or less, or about 0.60 atomic% or less, with respect to the total number of atoms of the transparent conductive film.

[0049] In addition, the thickness of the transparent conductive film may be about 2 nm or more, for example, about 3 nm or more, about 4 nm or more, about 5 nm or more, about 6 nm or more, about 7 nm or more, about 8 nm or more, about 9 nm or more, or about 10 nm or more, and about 40 nm or less, for example, about 39 nm or less, about 38 nm or less, about 37 nm or less, about 36 nm or less, or about 35 nm or less.

[0050] The above transparent conductive film can be used as a transparent electrode of a flexible device because its sheet resistance measured at room temperature is low, approximately 60 ohm / sq. or less. In one embodiment, the sheet resistance of the transparent conductive film may be approximately 0.01 ohm / sq. or higher, and also approximately 55 ohm / sq. or lower, e.g., approximately 50 ohm / sq. or lower, approximately 45 ohm / sq. or lower, approximately 40 ohm / sq. or lower, approximately 35 ohm / sq. or lower, approximately 30 ohm / sq. or lower, approximately 25 ohm / sq. or lower, approximately 20 ohm / sq. or lower, approximately 15 ohm / sq. or lower, approximately 14 ohm / sq. or lower, approximately 13 ohm / sq. or lower, approximately 12 ohm / sq. or lower, approximately 11 ohm / sq. It may be less than or equal to about 10 ohm / sq.

[0051] The transparent conductive film may have a light transmittance of about 80% or more in a wavelength region of 550 nm or more, for example, about 82% or more, about 84% or more, about 85% or more, about 86% or more, about 88% or more, or about 90% or more. The transparent conductive film may have a light transmittance of about 99.9% or less in a wavelength region of 550 nm or more. Since it has such high light transmittance, it can be utilized as a transparent electrode of a device.

[0052] In addition, the transparent conductive film may have a sheet resistance increase rate of about 20% or less, e.g., about 19% or less, e.g., about 18% or less, e.g., about 17% or less, e.g., about 16% or less, or e.g., about 15% or less, after 10,000 bending repetitions with a radius of curvature of 4 mm or less, and may be about 0.01% or more. The sheet resistance increase rate is defined as the initial sheet resistance being R0 and the sheet resistance after 10,000 bending repetitions being R f When saying that, it can be calculated using the following mathematical formula 1.

[0053] [Mathematical Formula 1]

[0054] [(R f - R0) / R0]*100

[0055] As described above, the low rate of increase in surface resistance after repeated bending indicates excellent mechanical stability and reliability.

[0056] The carrier density of the above transparent conductive film is 1.0 × 10⁻⁶ 21 cm -3 Above, for example, 1.5×10 21 cm -3 It may be more than that. In addition, the carrier density of the transparent conductive film is 5.0 × 10⁻⁶ 21 cm -3 Below, for example, 4.9×10 21 cm -3 It may be less than or equal to the above range. Excellent conductivity can be provided within the above range.

[0057] The work function of the halogen-doped metal chalcogenide compound of the transparent conductive film may be about 5.2 eV or more, for example about 5.3 eV or more or about 5.4 eV or more, and may also be about 5.6 eV or less. Since it has a work function within the above range, it can be used as an electrode to replace conventional ITO electrodes.

[0058] Since the above transparent conductive film is manufactured by a dry process, it may not contain organic materials derived from various organic solvents or ligands. Not containing organic materials may mean containing them in an amount of about 100 ppm or less (by weight). In one embodiment, organic materials are substantially absent, or if present, they are present in an amount below the detection limit of a given detection means or at the level of impurities. Examples of the detection means include a gas chromatography-mass spectrometer (GC-MS) and a thermal desorption spectrometer.

[0059] Transition metal oxides, which are conventionally used as transparent conductive films, have low mechanical strength and high processing temperatures; therefore, transition metal chalcogenide compounds have been proposed to replace them. While these transition metal chalcogenide compounds have the advantage of excellent mechanical properties and transparency, there are limitations to forming films directly on flexible substrates because the film fabrication process requires a deposition process with high vacuum and temperature. Accordingly, one embodiment provides a method for manufacturing a transparent conductive film capable of forming on a flexible substrate.

[0060] Hereinafter, a method for manufacturing the transparent conductive film according to one embodiment is described. The method for manufacturing the transparent conductive film comprises the steps of: exposing a metal film to a chalcogen element-containing material to produce a film containing a metal chalcogenide compound; and exposing the film containing the metal chalcogenide compound to a halogen element-containing material to produce a transparent conductive film containing a halogen-doped metal chalcogenide compound.

[0061] The above metal film is a film having a nano-sized thickness and can be manufactured by depositing a metal selected from transition metals, alkali metals, alkaline earth metals, and combinations thereof, and may also be a commercially available metal film. The deposition process of the metal is approximately 1.0 x 10⁻⁶ -6 Up to about 4.0 x 10 -6 It can be carried out at a pressure of torr and at room temperature. The deposition process of the metal may include physical vapor deposition such as sputtering, chemical vapor deposition, atomic layer deposition, or a combination thereof.

[0062] The above chalcogen element-containing material may contain a chalcogen element selected from S, Se, Te, and combinations thereof. The above chalcogen element-containing material may include H2S, H2Se, H2Te, or combinations thereof.

[0063] The metal film can be exposed to a chalcogen-containing material for a time of about 10 seconds or more, e.g., 20 seconds or more, and about 50 seconds or less, e.g., about 40 seconds or less. Within this range, the reaction between the metal and the chalcogen element can be sufficiently carried out.

[0064] The metal chalcogenide compound obtained by exposing the above metal film to a chalcogen element-containing material can be formed into a two-dimensional nanostructure, such as nanoparticles.

[0065] The above metal chalcogenide compound is exposed to a halogen-containing substance to dope the metal chalcogenide compound with a halogen.

[0066] The above halogen element-containing material may be a halogen molecule or a halogen-containing compound in a gaseous, liquid, or solid state. Examples of the above halogen molecules include F2, Cl2, Br2, or I2, and examples of halogen-containing compounds include HF, HCl, HI, etc.

[0067] The film containing the metal chalcogenide compound can be exposed to a halogen element-containing material for a time of about 10 seconds or more, e.g., 20 seconds or more, and about 50 seconds or less, e.g., about 40 seconds or less. Within this range, the metal chalcogenide compound can be doped with a desired amount of halogen element.

[0068] The above manufacturing method may further include a process of heat-treating a transparent conductive film comprising a halogen-doped metal chalcogenide compound.

[0069] The above heat treatment may be performed at approximately 250°C or lower, for example, approximately 200°C or lower, approximately 150°C or lower, or approximately 100°C or lower. The above heat treatment may be performed at approximately 80°C or higher, for example, approximately 85°C or higher, approximately 90°C or higher, approximately 95°C or higher, or approximately 100°C or higher. . In this way, by performing a heat treatment process at a low temperature, a transparent conductive film can be formed on a flexible substrate without damaging the flexible substrate.

[0070] The above transparent conductive film has high conductivity, excellent transparency, light transmittance, mechanical properties, and low sheet resistance, so it can be applied as an electrode (source electrode, drain electrode, or gate electrode) of a thin-film transistor and as a light-transmitting electrode of various devices.

[0071] A thin-film transistor including the transparent conductive film according to one embodiment is provided below with reference to FIG. 1.

[0072] FIG. 1 is a cross-sectional view illustrating a thin-film transistor according to one embodiment.

[0073] Referring to FIG. 1, the thin-film transistor (10) includes a gate electrode (13) located on a substrate (11), a gate insulating film (15) formed on the gate electrode (13); a semiconductor thin film (19) overlapping with the gate electrode (13), and a source electrode (17a) and a drain electrode (17b) electrically connected to the semiconductor thin film (19).

[0074] The substrate (11) may be made of transparent glass, silicon, plastic, etc. A gate electrode (13) formed on the substrate (11) is connected to a gate line (not shown) that transmits a gate signal. The gate electrode (13) may be made of gold (Au), copper (Cu), nickel (Ni), aluminum (Al), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), alloys thereof, or combinations thereof. The gate electrode (13) may include the aforementioned transparent conductive film.

[0075] A gate insulating film (15) is formed on the gate electrode (13). The gate insulating film (15) can be made of organic, inorganic, and / or organic-inorganic materials, such as oxides, nitrides, or oxides. Examples of the organic materials include polyvinyl alcohol-based compounds, polyimide-based compounds, polyacryl-based compounds, polystyrene-based compounds, and soluble polymer compounds such as benzocyclobutane (BCB). Examples of the inorganic materials include silicon nitride (SiN₂). x Examples include ) and silicon dioxide (SiO2).

[0076] A semiconductor thin film (19) is formed on the gate insulating film (15). The semiconductor thin film (19) may include an organic semiconductor, an inorganic semiconductor, or an organic-inorganic semiconductor.

[0077] A source electrode (17a) and a drain electrode (17b) are formed on the semiconductor thin film (19). The source electrode (17a) and the drain electrode (17b) face each other on the semiconductor thin film (19). The source electrode (17a) is connected to a data line (not shown) that transmits a data signal. The source electrode (17a) and the drain electrode (17b) may include the aforementioned transparent conductive film.

[0078] In one embodiment, the source electrode (17a) and the drain electrode (17b) may comprise a first metal chalcogenide compound, and the semiconductor thin film (19) may comprise a second metal chalcogenide compound, and the first metal chalcogenide compound and the second metal chalcogenide compound may be doped with a halogen. A thin film transistor of this structure can simplify the process and improve the contact resistance between the semiconductor thin film and the transparent conductive film by simultaneously performing the manufacturing process of a transparent conductive film and the manufacturing process of a thin film transistor by stacking the semiconductor thin film (19) containing the second metal chalcogenide compound and the source electrode (17a) and drain electrode (17b) containing the first metal chalcogenide compound and then simultaneously doping them with a halogen. The first metal chalcogenide compound may be a compound represented by Chemical Formula 1, as described in the transparent conductive film. As the second metal chalcogenide compound, any inorganic semiconductor capable of halogen doping may be used without limitation. The above second metal chalcogenide compound can be represented, for example, by the following chemical formula 2.

[0079] [Chemical Formula 2]

[0080] M'X'2

[0081] In the above chemical formula 2, M' is a transition metal, and X' is selected from S, Se, Te, and combinations thereof. The transition metal may be, for example, a group 4, group 5, or group 6 element. Specific examples of the second metal chalcogenide compound include MoS2, MoSe2, MoTe2, WS2, WSe2, WTe2, Cu2S, Cu2Se, Cu2Te, etc.

[0082] Here, a thin-film transistor with a bottom gate and top contact structure has been described as an example, but it is not limited thereto and can be equally applied to thin-film transistors of all structures, such as thin-film transistors with a top gate and / or bottom contact structure.

[0083] The above transparent conductive film or thin-film transistor may be applied to various electronic devices, and the electronic devices may include, for example, liquid crystal displays, light-emitting displays, electrophoretic displays, photoelectric devices, sensors, touch panels, solar cells, e-windows, or heat mirrors, but are not limited thereto.

[0084] A sensor with a double transparent conductive film is described. The sensor may be an absorption sensor capable of receiving light and converting it into an electrical signal.

[0085] FIG. 2 is a cross-sectional view showing an example of a sensor according to one embodiment.

[0086] Referring to FIG. 2, a sensor (100) according to one embodiment includes a first electrode (110), a second electrode (120), a photoelectric conversion layer (130), and auxiliary layers (140, 150).

[0087] A substrate (not shown) may be placed below the first electrode (110) or above the second electrode (120). The substrate may be an inorganic substrate, such as a glass plate or a silicon wafer, or an organic substrate made of an organic material, such as polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyamide, polyethersulfone, or a combination thereof. The substrate may be omitted.

[0088] The substrate may be, for example, a semiconductor substrate or a silicon substrate. The semiconductor substrate may include a circuit portion (not shown), and the circuit portion may include a transfer transistor (not shown) and / or a charge storage (not shown) integrated on the semiconductor substrate. The circuit portion may be electrically connected to a first electrode (110) or a second electrode (120). The transfer transistor may be the transistor shown in FIG. 1.

[0089] One of the first electrode (110) and the second electrode (120) may be an anode and the other may be a cathode. For example, the first electrode (110) may be an anode and the second electrode (120) may be a cathode. For example, the first electrode (110) may be a cathode and the second electrode (120) may be an anode.

[0090] At least one of the first electrode (110) and the second electrode (120) may be a light-transmitting electrode comprising the aforementioned transparent conductive film. The light-transmitting electrode may be a light-receiving electrode located on the side receiving light.

[0091] Either one of the first electrode (110) and the second electrode (120) may be a semitransparent electrode or a reflective electrode. The semitransparent electrode may have a light transmittance of about 30% or more and less than about 85%, about 40% to about 80%, or about 40% to 75%. The semitransparent electrode may include, for example, at least one of a carbon conductor and a metal thin film. The carbon conductor may be one or more selected from graphene and carbon nanomaterials, and the metal thin film may be a very thin film including aluminum (Al), magnesium (Mg), silver (Ag), gold (Au), magnesium-silver (Mg-Ag), magnesium-aluminum (Mg-Al), alloys thereof, or combinations thereof. The reflective electrode may include a reflective layer having a light transmittance of about 5% or less and / or a reflectance of about 80% or more, and the reflective layer may include an optically opaque material. Optically opaque materials may include metals, metal nitrides, or combinations thereof, such as silver (Ag), copper (Cu), aluminum (Al), gold (Au), titanium (Ti), chromium (Cr), nickel (Ni), alloys thereof, nitrides thereof (e.g., TiN), or combinations thereof, but are not limited thereto. The reflective electrode may be composed of a reflective layer or a stacked structure of a reflective layer / light-transmitting layer or a light-transmitting layer / reflective layer / light-transmitting layer, and the reflective layer may be one layer or two or more layers.

[0092] The photoelectric conversion layer (130) can absorb light in at least some wavelength ranges and convert it into an electrical signal, for example, it can convert at least some of the light in the blue wavelength range (hereinafter referred to as "blue light"), the light in the green wavelength range (hereinafter referred to as "green light"), the light in the red wavelength range (hereinafter referred to as "red light"), and the light in the infrared wavelength range (hereinafter referred to as "infrared light") into an electrical signal.

[0093] For example, the photoelectric conversion layer (130) can selectively absorb any one of blue light, green light, red light, and infrared light and convert it into an electrical signal. Here, selectively absorbing any one of blue light, green light, red light, and infrared light means the maximum absorption wavelength (λ) of the absorption spectrum. max ) exists in any one of the wavelength regions of approximately 380 nm or more and less than 500 nm, approximately 500 nm to 600 nm, approximately 600 nm or more and 700 nm or less, and approximately 700 nm or more and 3000 nm or less, and means that the absorption spectrum within the said wavelength region is significantly higher than the absorption spectrum in other wavelength regions, and where "significantly higher" means that, for example, about 70% to 100%, about 75% to 100%, about 80% to 100%, about 85% to 100%, about 90% to 100%, or about 95% to 100% of the total area of ​​the absorption spectrum belongs to the said wavelength region.

[0094] The photoelectric conversion layer (130) may include at least one p-type semiconductor and at least one n-type semiconductor for photoelectric conversion of absorbed light. The p-type semiconductor and the n-type semiconductor may form a pn junction and, after receiving light from the outside to generate an exciton, may separate the generated exciton into holes and electrons.

[0095] At least one of the p-type semiconductor and the n-type semiconductor may be a light-absorbing material, for example, each of the p-type semiconductor and the n-type semiconductor may be a light-absorbing material. For example, at least one of the p-type semiconductor and the n-type semiconductor may be an organic material. As an example, at least one of the p-type semiconductor and the n-type semiconductor may be a wavelength-selective light-absorbing material that selectively absorbs light in a predetermined wavelength region, for example, at least one of the p-type semiconductor and the n-type semiconductor may be a wavelength-selective organic light-absorbing material. The p-type semiconductor and the n-type semiconductor have a maximum absorption wavelength (λ) in the same or different wavelength regions.max Can have ).

[0096] For example, at least one of the p-type semiconductor and the n-type semiconductor has a maximum absorption wavelength (λ) in a wavelength region of about 380 nm or more and less than 500 nm. max It may be a light-absorbing material having ), for example, a maximum absorption wavelength (λ) in the wavelength range of about 410 nm to 480 nm. max It can be an organic light-absorbing material having ).

[0097] For example, at least one of the p-type semiconductor and the n-type semiconductor has a maximum absorption wavelength (λ) in the wavelength region of about 500 nm to 600 nm. max It may be a light-absorbing material having ), for example, a maximum absorption wavelength (λ) in the wavelength range of about 520 nm to 580 nm. max It can be an organic light-absorbing material having ).

[0098] For example, at least one of the p-type semiconductor and the n-type semiconductor has a maximum absorption wavelength (λ) in the wavelength region greater than about 600 nm and less than 700 nm. max It may be a light-absorbing material having ), for example, a maximum absorption wavelength (λ) in the wavelength range of about 620 nm to 680 nm. max It can be an organic light-absorbing material having ).

[0099] For example, the HOMO energy level of the p-type semiconductor may be about 5.0 to 6.0 eV, and within the above range may be about 5.1 to 5.9 eV, about 5.2 to 5.8 eV, or about 5.3 to 5.8 eV. For example, the LUMO energy level of the p-type semiconductor may be about 2.7 to 4.3 eV, and within the above range may be about 2.8 to 4.1 eV or about 3.0 to 4.0 eV. For example, the energy bandgap of the p-type semiconductor may be about 1.7 to 2.3 eV, and within the above range may be about 1.8 to 2.2 eV or about 1.9 to 2.1 eV.

[0100] For example, a p-type semiconductor may be an organic material having a core structure including an electron donating moiety (EDM), a pi-conjugated linking moiety (LM), and an electron accepting moiety (EAM), and may be represented, for example, by the following chemical formula 3.

[0101] [Chemical Formula 3]

[0102] EDM - LM - EAM

[0103] In Chemical Formula 3,

[0104] EDM can be an electron-donating moiety, and

[0105] EAM can be an electron-accepting moiety, and

[0106] LM can be a pi-conjugated connected moiety connecting an electron donor moiety and an electron acceptor moiety.

[0107] For example, an n-type semiconductor may be a fullerene or a fullerene derivative, a thiophene or a thiophene derivative, or a combination thereof, but is not limited thereto.

[0108] The photoelectric conversion layer (130) may be an intrinsic layer (Layer I) in which a p-type semiconductor and an n-type semiconductor are mixed in the form of a bulk heterojunction. In this case, the p-type semiconductor and the n-type semiconductor may be mixed in a volume ratio (thickness ratio) of about 1:9 to 9:1, for example, in a volume ratio (thickness ratio) of about 2:8 to 8:2 within the above range, for example, in a volume ratio (thickness ratio) of about 3:7 to 7:3 within the above range, for example, in a volume ratio (thickness ratio) of about 4:6 to 6:4 within the above range, and for example, in a volume ratio (thickness ratio) of about 5:5 within the above range.

[0109] The photoelectric conversion layer (130) may include a double layer comprising a p-type layer including a p-type semiconductor and an n-type layer including an n-type semiconductor. In this case, the thickness ratio of the p-type layer and the n-type layer may be about 1:9 to 9:1, and within the above range, for example, about 2:8 to 8:2, about 3:7 to 7:3, about 4:6 to 6:4, or about 5:5.

[0110] The photoelectric conversion layer (130) may further include a p-type layer and / or an n-type layer in addition to the intrinsic layer. The p-type layer may include the aforementioned p-type semiconductor, and the n-type layer may include the aforementioned n-type semiconductor. For example, it may be included in various combinations such as a p-type layer / I-layer, an I-layer / n-type layer, a p-type layer / I-layer / n-type layer, etc.

[0111] The photoelectric conversion layer (130) may have a thickness of about 1 nm to about 500 nm, and may have a thickness of about 5 nm to about 300 nm within the above range. By having a thickness within the above range, the photoelectric conversion efficiency can be effectively improved by effectively absorbing light and effectively separating and transmitting holes and electrons.

[0112] The auxiliary layers (140, 150) include a first auxiliary layer (140) located between the first electrode (110) and the photoelectric conversion layer (130), and a second auxiliary layer (150) located between the second electrode (120) and the photoelectric conversion layer (130). The first and second auxiliary layers (140, 150) may each be a charge auxiliary layer that controls the mobility of holes and / or electrons separated from the photoelectric conversion layer (130), or an absorption auxiliary layer that improves absorption characteristics.

[0113] The first and second auxiliary layers (140, 150) may each include independent organic, inorganic, and / or organic-inorganic materials. The first and second auxiliary layers (140, 150) may be one or more selected from, for example, a hole injecting layer (HIL), a hole transporting layer (HTL), an electron blocking layer (EBL), an electron injecting layer (EIL), an electron transporting layer (ETL), a hole blocking layer (HBL), and an absorption auxiliary layer, but are not limited thereto.

[0114] The hole injection layer, hole transport layer and / or electron blocking layer is a phthalocyanine compound, such as copper phthalocyanine; DNTPD(N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4,4'-diamine), m-MTDATA(4,4',4"-[tris(3-methylphenyl)phenylamino] triphenylamine), TDATA(4,4'4"-Tris(N,Ndiphenylamino)triphenylamine), 2-TNATA(4,4',4"-tris{N,-(2-naphthyl)-N-phenylamino}-triphenylamine), PEDOT / PSS(Poly(3,4-ethylenedioxythiophene) / Poly(4-styrenesulfonate)), PANI / DBSA (Polyaniline / Dodecylbenzenesulfonic acid), PANI / CSA (Polyaniline / Camphor sulfonicacid), PANI / PSS (Polyaniline / Poly(4-styrenesulfonate)), NPB (N,N'-di(naphthalene-l-yl)-N,N'-diphenylbenzidine), polyetherketone containing triphenylamine (TPAPEK), 4-Isopropyl-4'-methyldiphenyliodonium[Tetrakis(pentafluorophenyl)borate], HAT-CN (dipyrazino[2,3-f: 2',3'-h] quinoxaline-2,3,6,7,10,11-hexacarbonitrile), carbazole derivatives such as N-phenylcarbazole and polyvinylcarbazole, fluorine derivatives, TPD (N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine), TCTA (4,4',It may be a triphenylamine derivative such as 4"-tris(N-carbazolyl)triphenylamine), NPB (N,N'-di(naphthalene-l-yl)-N,N'-diphenyl-benzidine), TAPC (4,4'-Cyclohexylidene bis[N,N-bis(4-methylphenyl)benzenamine]), HMTPD (4,4'-Bis[N,N'-(3-tolyl)amino]-3,3'-dimethylbiphenyl), mCP (1,3-Bis(N-carbazolyl)benzene), or a combination thereof, but is not limited thereto.

[0115] The electron injection layer, electron transport layer, and / or hole blocking layer may be, for example, metal halides such as LiF, NaCl, CsF, RbCl, and RbI; lanthanide metals such as Yb; metals such as calcium (Ca), potassium (K), aluminum (Al), or alloys thereof; metal oxides such as Li2O and BaO; Liq(Lithium quinolate), Alq3(Tris(8-hydroxyquinolinato)aluminum), 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene, 2,4,6-tris(3'-(pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine, 2-(4-(N-phenylbenzoimidazolyl-1-ylphenyl)-9,10-dinaphthylanthracene, TPBi(1,3,5-Tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl), BCP(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen (4,7-Diphenyl-1,10-phenanthroline), TAZ(3-(4-Biphenylyl)-4-phenyl-5-tertbutylphenyl-1,2,4-triazole), NTAZ(4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole), tBu-PBD(2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), BAlq(Bis(2-methyl-8-quinolinolato-N1,O8)-(1,1'-Biphenyl-4-olato)aluminum), Bebq2(berylliumbis(benzoquinolin-10-olate), ADN(9,10-di(naphthalene-2-yl)anthracene), BmPyPhB(1,3-Bis[3,5-di(pyridin-3-yl)phenyl]benzene) or a combination thereof, but is not limited thereto.

[0116] The light-absorbing auxiliary layer may include, for example, fullerene or a fullerene derivative.

[0117] At least one of the first and second auxiliary layers (140, 150) (either one of the first and second auxiliary layers (140, 150) or both) may be omitted.

[0118] The sensor (100) may further include one or more additional auxiliary layers (not shown) between the first electrode (110) and the photoelectric conversion layer (130) and / or between the second electrode (120) and the photoelectric conversion layer (130), in addition to the first and second auxiliary layers (140, 150) described above. The additional auxiliary layers may be located between the first electrode (110) and the first auxiliary layer (140), between the first auxiliary layer (140) and the photoelectric conversion layer (130), between the second electrode (120) and the second auxiliary layer (150), and / or between the photoelectric conversion layer (130) and the second auxiliary layer (150). The additional auxiliary layers may include organic materials, inorganic materials, and / or organic-inorganic materials.

[0119] The sensor (100) may further include an anti-reflection layer (not shown) located below the first electrode (110) or above the second electrode (120). For example, when the first electrode (110) is a light-receiving electrode, the anti-reflection layer may be located below the first electrode (110). For example, when the second electrode (120) is a light-receiving electrode, the anti-reflection layer may be located above the second electrode (120). The anti-reflection layer may be positioned on the side where light is incident to further improve light absorption by lowering the reflectivity of the incident light. The anti-reflection layer may include a material having, for example, a refractive index of about 1.6 to 2.5, and may include at least one of a metal oxide, a metal sulfide, and an organic material having a refractive index in the above range. The anti-reflective layer may include, for example, metal oxides such as aluminum-containing oxide, molybdenum-containing oxide, tungsten-containing oxide, vanadium-containing oxide, rhenium-containing oxide, niobium-containing oxide, tantalum-containing oxide, titanium-containing oxide, nickel-containing oxide, copper-containing oxide, cobalt-containing oxide, manganese-containing oxide, chromium-containing oxide, tellurium-containing oxide, or combinations thereof; metal sulfides such as zinc sulfide; or organic materials such as amine derivatives, but is not limited thereto.

[0120] The sensor (100) may further include a focusing lens (not shown). The focusing lens can control the direction of the incident light at the location where the light is incident to gather the light into a single point. The focusing lens may be, for example, cylindrical or hemispherical, but is not limited thereto.

[0121] When light is incident from the first electrode (110) or the second electrode (120) side of the sensor (100) and the photoelectric conversion layer (130) absorbs light in a predetermined wavelength range, excitons can be generated internally. The excitons are separated into holes and electrons in the photoelectric conversion layer (130), and the separated holes move to the anode side, which is one of the first electrode (110) and the second electrode (120), and the separated electrons move to the cathode side, which is the other of the first electrode (110) and the second electrode (120), so that current can flow.

[0122] The sensor (100) may be included, for example, in an image sensor or a biometric sensor.

[0123] For example, the aforementioned sensor (100) may be included in an image sensor and may be applied as an image sensor suitable for high-speed shooting by reducing image afterimages caused by residual charge with improved optical and electrical characteristics as described above.

[0124] An image sensor according to one embodiment is described below.

[0125] FIG. 3 is a plan view showing an example of an image sensor according to one embodiment, and FIG. 4 is a cross-sectional view showing an example of the image sensor of FIG. 3.

[0126] Referring to FIG. 3, the image sensor (300) according to the present embodiment may be a stacked sensor in which a semiconductor substrate (200) and the aforementioned sensor (100) are stacked, and the semiconductor substrate (200) includes a first photodiode (220) and a second photodiode (230) that overlap with the sensor (100). FIG. 3 illustrates an example of a repeating unit pixel group in the image sensor (300), and such a unit pixel group is repeatedly arranged along a row and / or column. FIG. 3 illustrates, as an example, a 2x2 array of unit pixel groups in which two red pixels (R) and two blue pixels (B) are arranged on the semiconductor substrate (200), but is not limited thereto.

[0127] The first photodiode (220) and the second photodiode (230) are each integrated on a semiconductor substrate (200) and can convert light of different wavelength spectra into photoelectric light by absorbing light of different wavelength spectra filtered by a color filter layer (70) described later. The wavelength spectrum converted by the sensor (100) may be different from the wavelength spectrum converted by the first photodiode (220) and the second photodiode (230), for example, the wavelength spectrum converted by the first photodiode (220), the wavelength spectrum converted by the second photodiode (230), and the wavelength spectrum converted by the sensor (100) may be different from each other and may be selected from light of the red wavelength spectrum, green wavelength spectrum, and blue wavelength spectrum, respectively. For example, the first photodiode (220) can convert light of the red wavelength spectrum (R) into photoelectric power, the second photodiode (230) can convert light of the blue wavelength spectrum (B) into photoelectric power, and the sensor (100) can convert light of the green wavelength spectrum (G) into photoelectric power.

[0128] Referring to FIG. 4, an image sensor (300a) according to one embodiment includes a semiconductor substrate (200), a lower insulating layer (60), a color filter layer (70), an upper insulating layer (80), a sensor (100), and an encapsulation layer (380).

[0129] A semiconductor substrate (200) has first and second photodiodes (220, 230), a transfer transistor (not shown), and a charge storage (255) integrated therein. The first or second photodiode (220, 230), the transfer transistor, and / or the charge storage (255) may be integrated for each pixel, and as seen in the drawing, the first photodiode (220) may be included in the red pixel (R) and the second photodiode (230) may be included in the blue pixel (B). The charge storage (255) is electrically connected to the sensor (100). The transfer transistor may be the transistor shown in FIG. 1.

[0130] Metal wiring (not shown) and pads (not shown) are formed on the lower or upper part of the semiconductor substrate (200). The metal wiring and pads may be made of metals having low resistivity, such as aluminum (Al), copper (Cu), silver (Ag), and alloys thereof, to reduce signal delay, but are not limited thereto.

[0131] A lower insulating layer (60) is formed over the metal wiring and pads. The lower insulating layer (60) may be made of an inorganic insulating material such as silicon oxide and / or silicon nitride, or a low dielectric constant (low K) material such as SiC, SiCOH, SiCO, and SiOF. The lower insulating layer (60) has a trench (85) that exposes a charge storage (255). The trench (85) may be filled with a filler.

[0132] A color filter layer (70) is formed on the lower insulating film (60). The color filter layer (70) includes a red filter (70a) formed on a red pixel (R) and a blue filter (70b) formed on a blue pixel (B). However, it is not limited thereto, and a cyan filter, a magenta filter, and / or a yellow filter may be included in place of the red filter (70a) and / or the blue filter (70b), or additionally included in addition to the red filter (70a) and the blue filter (70b). In this embodiment, an example without a green filter is described, but a green filter may be provided depending on the case.

[0133] An upper insulating layer (80) is formed on the color filter layer (70). The upper insulating layer (80) eliminates the step difference caused by the color filter layer (70) and flattens it. The upper insulating layer (80) and the lower insulating layer (60) have a contact opening (not shown) that exposes a pad and a trench (85) that exposes a charge storage (255).

[0134] The aforementioned sensor (100) is formed on the upper insulating layer (80). A detailed description of the sensor (100) is as described above. One of the first electrode (110) and the second electrode (120) of the sensor (100) may be electrically connected to a charge storage (255), and the other of the first electrode (110) and the second electrode (120) of the sensor (100) may be a light receiving electrode. For example, the first electrode (110) of the sensor (100) may be electrically connected to a charge storage (255), and the second electrode (120) of the sensor (100) may be a light receiving electrode.

[0135] The encapsulation layer (380) can protect the image sensor (300a) and may include one or more thin films comprising organic, inorganic, organic-inorganic, or a combination thereof. The encapsulation layer (380) may include, for example, a glass plate, a metal thin film, an organic film, an inorganic film, an organic-inorganic film, or a combination thereof. The organic film may include, for example, an acrylic resin, (meth)acrylic resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, perylene resin, or a combination thereof, but is not limited thereto. The inorganic film may include, for example, oxides, nitrides and / or oxynitrides, and may be, for example, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, zirconium oxide, zirconium nitride, zirconium oxynitride, titanium oxide, titanium nitride, titanium oxynitride, hafnium oxide, hafnium nitride, hafnium oxynitride, tantalum oxide, tantalum nitride, tantalum oxynitride, lithium fluoride, or a combination thereof, but is not limited thereto. The organic-inorganic film may include, for example, polyorganosiloxane, but is not limited thereto. The encapsulation layer (380) may be one layer or two or more layers. The encapsulation layer (380) may be omitted.

[0136] A condensing lens (not shown) may be further formed on the sensor (100) (or encapsulation layer (380)). The condensing lens can control the direction of incident light to gather the light to a single point. The condensing lens may be, for example, cylindrical or hemispherical, but is not limited thereto.

[0137] Figure 5 is a cross-sectional view showing another example of the image sensor of Figure 3.

[0138] Referring to FIG. 5, an image sensor (300b) according to one example comprises, as in the above-described embodiment, a semiconductor substrate (200) in which first and second photodiodes (220, 230), a transfer transistor (not shown), and a charge storage (255) are integrated, a lower insulating layer (60), a color filter layer (70), an upper insulating layer (80), and a sensor (100). The transfer transistor may be the transistor shown in FIG. 1.

[0139] However, unlike the previously described embodiment, the image sensor (300b) according to the present example further includes a transistor (10a) located above the red filter (70a) of the color filter layer (70) and a transistor (10b) located above the blue filter (70b). The transistors (10a, 10b) may be the transistors shown in FIG. 1. Since the transistors (10a, 10b) have excellent transparency and light transmittance, they may be located above the color filters. Although the transistors (10a, 10b) are shown in FIG. 5 as being located overlapping the ends of the color filters, they are not limited thereto.

[0140] The transistor may be located at the bottom of each color filter of the color filter layer. This structure is illustrated in FIG. 6. FIG. 6 is a cross-sectional view showing another example of the image sensor of FIG. 3.

[0141] Referring to FIG. 6, similar to the previously described embodiment, the semiconductor substrate (200) in which first and second photodiodes (220, 230), a transfer transistor (not shown), and a charge storage (255) are integrated, a lower insulating layer (60), a color filter layer (70), an upper insulating layer (80), and a sensor (100) are included. The transfer transistor may be the transistor shown in FIG. 1.

[0142] However, unlike the previously described embodiment, the image sensor (300c) according to the present example further includes a transistor (10'a) located below the red filter (70a) of the color filter layer (70) and a transistor (10'b) located below the blue filter (70b). The transistors (10'a, 10'b) are connected to the first and second photodiodes (220, 230), respectively, through trenches (85a, 85b).

[0143] Figure 7 is a cross-sectional view showing another example of the image sensor of Figure 3.

[0144] Referring to FIG. 7, an image sensor (300d) according to one example comprises, as in the above-described embodiment, a semiconductor substrate (200) in which first and second photodiodes (220, 230), a transfer transistor (not shown), and a charge storage (255) are integrated, a lower insulating layer (60), an upper insulating layer (80), and a sensor (100). The transfer transistor may be the transistor shown in FIG. 1.

[0145] The image sensor (300d) according to the present example includes a transistor (10a) located above the red filter (70a) of the color filter layer (70) and a transistor (10b) located above the blue filter (70b), as in the image sensor (300b) shown in FIG. 5. The transistors (10a, 10b) may be the transistors shown in FIG. 1. Since the transistors (10a, 10b) have excellent transparency and light transmittance, they may be located above the color filter. The transistors may also be located below the color filter.

[0146] However, unlike the previously described embodiment, the image sensor (300d) according to the present example has first and second photodiodes (220, 230) stacked perpendicularly to the plane direction of the semiconductor substrate (200). The first and second photodiodes (220, 230) are electrically connected to a charge storage (not shown) and can be transmitted by a transfer transistor. The first and second photodiodes (220, 230) can selectively absorb light in each wavelength region depending on the stacking depth.

[0147] The sensor (100) is as described above. One of the first electrode (110) and the second electrode (120) of the sensor (100) may be a light receiving electrode, and the other of the first electrode (110) and the second electrode (120) of the sensor (100) may be electrically connected to a charge storage (255).

[0148] FIG. 8 is a plan view showing another example of an image sensor according to one embodiment, and FIG. 9 is a cross-sectional view showing one example of the image sensor of FIG. 8.

[0149] The image sensor (400) according to the present example has a structure in which a green sensor that selectively absorbs light in a green wavelength region, a blue sensor that selectively absorbs light in a blue wavelength region, and a red sensor that selectively absorbs light in a red wavelength region are stacked.

[0150] An image sensor (400a) according to the present example includes a semiconductor substrate (200), a lower insulating layer (60), an intermediate insulating layer (65), an upper insulating layer (80), a first sensor (100a), a second sensor (100b), and a third sensor (100c).

[0151] The semiconductor substrate (200) may be a semiconductor substrate such as a silicon substrate, and has a transfer transistor (not shown) and a charge storage (255a, 255b, 255c) integrated therein.

[0152] Metal wiring (not shown) and pads (not shown) are formed on the semiconductor substrate (200), and a lower insulating layer (60) is formed on the metal wiring and pads.

[0153] A first sensor (100a), a second sensor (100b), and a third sensor (100c) are formed in sequence on the lower insulating layer (60).

[0154] The first, second, and third sensors (100a, 100b, 100c) may each be the aforementioned sensor (100). One of the first electrode (110) and the second electrode (120) of the first, second, and third sensors (100a, 100b, 100c) may be a light receiving electrode, and the other of the first electrode (110) and the second electrode (120) of the first, second, and third sensors (100a, 100b, 100c) may be connected to a charge storage unit (255a, 255b, 255c).

[0155] The first sensor (100a) can selectively absorb light in any one of the wavelength regions of red, blue, and green and convert it into photoelectric. For example, the first sensor (100a) may be a red sensor. An intermediate insulating layer (65) is formed on the first sensor (100a).

[0156] A second sensor (100b) is formed on the intermediate insulating layer (65). The second sensor (100b) can selectively absorb light in any one of the wavelength regions of red, blue, and green and convert it into photoelectric. For example, the second sensor (100b) may be a blue sensor.

[0157] An upper insulating layer (80) is formed on the second sensor (100b). The lower insulating layer (60), the middle insulating layer (65), and the upper insulating layer (80) have a plurality of trenches (85a, 85b, 85c) that expose charge storage tanks (255a, 255b, 255c).

[0158] A third sensor (100c) is formed on the upper insulating layer (80). The third sensor (100c) can selectively absorb light in any one of the wavelength regions of red, blue, and green and convert it into photoelectric. For example, the third sensor (100c) may be a green sensor.

[0159] A condensing lens (not shown) may be further formed on the third sensor (100c). The condensing lens can control the direction of incident light to gather the light to a single point. The condensing lens may be, for example, cylindrical or hemispherical, but is not limited thereto.

[0160] In the drawing, a structure in which the first sensor (100a), the second sensor (100b), and the third sensor (100c) are stacked in order is illustrated, but it is not limited thereto and the stacking order can be varied.

[0161] As described above, by having a stacked structure of a first sensor (100a), a second sensor (100b), and a third sensor (100c) that absorb light in different wavelength regions, the size of the image sensor can be further reduced to realize a miniaturized image sensor.

[0162] FIG. 10 is a plan view showing another example of an image sensor according to one embodiment, and FIG. 11 is a cross-sectional view showing one example of the image sensor of FIG. 10.

[0163] Referring to FIGS. 10 and 11, the image sensor (500) includes a sensor (100) positioned on a semiconductor substrate (200), and the sensor (100) includes first, second, and third sensors (100a, 100b, 100c). The first, second, and third sensors (100a, 100b, 100c) can convert light in different wavelength regions (e.g., blue light, green light, or red light) into electrical signals.

[0164] Referring to FIG. 11, the first, second, and third sensors (100a, 100b, 100c) are arranged in a direction parallel to the surface of the substrate (200), unlike the example described above. Each of the first, second, and third sensors (100a, 100b, 100c) is electrically connected to a charge storage (255) integrated within the substrate (200) through a trench (85).

[0165] For example, the aforementioned sensor (100) may be included in a display panel, and may be applied to a sensor-embedded display panel in which the sensor (100) is embedded within the display panel.

[0166] A sensor-embedded display panel including the aforementioned sensor is described below.

[0167] A sensor-embedded display panel according to one embodiment may be a display panel capable of performing a display function and a recognition function (e.g., a biometric recognition function), and may be an in-cell type display panel in which a sensor that performs a recognition function (e.g., a biometric recognition function) is embedded within the display panel.

[0168] FIG. 12 is a plan view showing an example of a sensor-embedded display panel according to one embodiment, and FIG. 13 is a cross-sectional view showing an example of a sensor-embedded display panel according to one embodiment.

[0169] Referring to FIGS. 12 and 13, a sensor-embedded display panel (1000) according to one embodiment includes a plurality of subpixels (PX) that display different colors. The plurality of subpixels (PX) may display at least three primary colors and include a first subpixel (PX1), a second subpixel (PX2), and a third subpixel (PX3) that display different first, second, and third colors selected from red, green, and blue, for example. For example, the first color, the second color, and the third color may be red, green, and blue, respectively, and the first subpixel (PX1) may be a red subpixel that displays red, the second subpixel (PX2) may be a green subpixel that displays green, and the third subpixel (PX3) may be a blue subpixel that displays blue. However, it is not limited thereto and may further include auxiliary subpixels (not shown), such as a white subpixel.

[0170] A plurality of subpixels (PX), including a first subpixel (PX1), a second subpixel (PX2), and a third subpixel (PX3), may form a single unit pixel (UP) and be arranged repeatedly along a row and / or column. In FIG. 12, a structure consisting of one first subpixel (PX1), two second subpixels (PX2), and one third subpixel (PX3) in a unit pixel (UP) is illustrated as an example, but is not limited thereto and may include at least one first subpixel (PX1), at least one second subpixel (PX2), and at least one third subpixel (PX3). In the drawing, a Pentile type arrangement is illustrated as an example, but is not limited thereto and the arrangement of subpixels (PX) can be varied. The area occupied by the plurality of subpixels (PX) and the area displaying color by the plurality of subpixels (PX) may be a display area (DA) for displaying an image.

[0171] The first subpixel (PX1), the second subpixel (PX2), and the third subpixel (PX3) may each include a light-emitting element. For example, the first subpixel (PX1) may include a first light-emitting element (410) capable of emitting light of a wavelength spectrum of a first color, the second subpixel (PX2) may include a second light-emitting element (420) capable of emitting light of a wavelength spectrum of a second color, and the third subpixel (PX3) may include a third light-emitting element (430) capable of emitting light of a wavelength spectrum of a third color. However, not limited thereto, at least one of the first subpixel (PX1), the second subpixel (PX2), and the third subpixel (PX3) may include a light-emitting element that emits light of a white wavelength spectrum, i.e., a combination of the first color, the second color, and the third color, and may display the first color, the second color, or the third color through a color filter (not shown).

[0172] A sensor-embedded display panel (1000) according to one embodiment includes the aforementioned sensor (100). The sensor (100) may be placed in a non-display area (NDA). The non-display area (NDA) is an area other than the display area (DA) and may be an area where the first subpixel (PX1), the second subpixel (PX2), the third subpixel (PX3), and the auxiliary subpixel are not placed. The sensor (100) may be placed between at least two selected from the first subpixel (PX1), the second subpixel (PX2), and the third subpixel (PX3), and may be placed side-by-side with the first, second, and third light-emitting elements (410, 420, 430) placed in the display area (DA).

[0173] The sensor (100) may be an optical type recognition sensor (e.g., a biometric recognition sensor), and may absorb light emitted from at least one of the first, second, and third light-emitting elements (410, 420, 430) placed in the display area (DA) and reflected by a recognition target (40), such as a biological object, tool, or object, and convert it into an electrical signal. Here, the biological object may be a finger, fingerprint, palm, iris, face, and / or wrist, but is not limited thereto. The sensor (100) may be, for example, a fingerprint sensor, an illuminance sensor, an iris sensor, a distance sensor, a blood vessel distribution sensor, and / or a heart rate sensor, but is not limited thereto.

[0174] The sensor (100) may be placed on the substrate (200) on the same plane as the first, second, and third light-emitting elements (410, 420, 430) and may be embedded within the display panel (1000).

[0175] Referring to FIG. 13, a sensor-embedded display panel (1000a) comprises a substrate (200); a thin-film transistor (280) formed on the substrate (200); an insulating layer (290) formed on the thin-film transistor (280); a pixel defining layer (180) formed on the insulating layer (290); and a sensor (100) and a first, second, or third light-emitting element (410, 420, 430) located in a space partitioned by the pixel defining layer (180). The thin-film transistor (280) may be the transistor shown in FIG. 1.

[0176] The above substrate (200) may be a light-transmitting substrate, for example, a glass substrate or a polymer substrate. The polymer substrate may include, for example, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate, polyimide, polyamide, polyamideimide, polyethersulfone, polyorganosiloxane, styrene-ethylene-butylene-styrene, polyurethane, polyacrylic, polyolefin, or a combination thereof, but is not limited thereto.

[0177] A plurality of thin-film transistors (280) are formed on a substrate (200). One or more thin-film transistors (280) may be included for each subpixel (PX), and may include, for example, at least one switching thin-film transistor and / or at least one driving thin-film transistor. The substrate (200) on which the thin-film transistors (280) are formed may be called a thin-film transistor substrate (TFT substrate) or a thin-film transistor backplane (TFT backplane).

[0178] The insulating layer (290) may cover the substrate (200) and the thin-film transistor (280) and may be formed on the front surface of the substrate (200). The insulating layer (290) may be a planarization film or a passivation film and may include an organic insulating material, an inorganic insulating material, an organic-inorganic insulating material, or a combination thereof. The insulating layer (290) may have a plurality of contact holes (241) for connecting the first, second, and third light-emitting elements (410, 420, 430) and the thin-film transistor (280), and a plurality of contact holes (242) for electrically connecting the sensor (100) and the thin-film transistor (280).

[0179] A pixel definition layer (180) may also be formed on the front surface of the substrate (200) and may be positioned between adjacent subpixels (PX) to partition each subpixel (PX). The pixel definition layer (180) may have a plurality of openings (181) located at each subpixel (PX), and any one of the first, second, and third light-emitting elements (410, 420, 430) and the sensor (100) may be located at each opening (181).

[0180] The first, second, and third light-emitting elements (410, 420, 430) are formed on a substrate (200) (or a thin-film transistor substrate) and are repeatedly arranged along the plane direction (e.g., xy direction) of the substrate (200). As described above, the first, second, and third light-emitting elements (410, 420, 430) may each be included in a first subpixel (PX1), a second subpixel (PX2), and a third subpixel (PX3), and the first, second, and third light-emitting elements (410, 420, 430) may be electrically connected to separate thin-film transistors (280) and driven independently.

[0181] The first, second, and third light-emitting elements (410, 420, 430) can each independently emit light selected from a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, and a combination thereof. For example, the first light-emitting element (410) can emit light of the red wavelength spectrum, the second light-emitting element (420) can emit light of the green wavelength spectrum, and the third light-emitting element (430) can emit light of the blue wavelength spectrum. Here, the red wavelength spectrum, the green wavelength spectrum, and the blue wavelength spectrum each have a maximum emission wavelength (λ) in the wavelength regions of approximately 600 nm to less than 750 nm, approximately 500 nm to 600 nm, and approximately 400 nm to less than 500 nm. max Can have ).

[0182] The first, second, and third light-emitting elements (410, 420, 430) may be, for example, light-emitting diodes, and may be, for example, organic light-emitting diodes containing organic materials, inorganic light-emitting diodes containing inorganic materials, quantum dot light-emitting diodes containing quantum dots, or perovskite light-emitting diodes containing perovskite.

[0183] The sensor (100) is formed on a substrate (200) (or a thin-film transistor substrate) and may be arranged randomly or regularly along the plane direction (e.g., xy direction) of the substrate (200). As described above, the sensor (100) may be located in a non-display area (NDA) and may be connected to a separate thin-film transistor (280) and driven independently. The sensor (100) may absorb light of the same wavelength spectrum as the light emitted from at least one of the first, second, and third light-emitting elements (410, 420, 430) and convert it into an electrical signal, and may, for example, absorb light of a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, or a combination thereof and convert it into an electrical signal. The sensor (100) may be, for example, a photoelectric conversion diode.

[0184] Each of the first, second, and third light-emitting elements (410, 420, 430) and the sensor (100) includes a pixel electrode (411, 421, 431, 110); a common electrode (120) facing the pixel electrode (411, 421, 431, 110) and to which a common voltage is applied; and a light-emitting layer (412, 422, 432) or photoelectric conversion layer (130) located between the pixel electrode (411, 421, 431, 110) and the common electrode (120), a first common auxiliary layer (140), and a second common auxiliary layer (150). The pixel electrode (110) of the sensor (100) may correspond to the first electrode (110) of the sensor (100) described above, the common electrode (120) of the sensor (100) may correspond to the second electrode (120) of the sensor (100) described above, and the first and second common auxiliary layers (140, 150) may correspond to the first and second auxiliary layers (140, 150) of the sensor (100) described above.

[0185] The first, second, and third light-emitting elements (410, 420, 430) and the sensor (100) are arranged side by side along the plane direction (e.g., xy direction) of the substrate (200) and may share a common electrode (120), a first common auxiliary layer (140), and a second common auxiliary layer (150) formed on the front surface.

[0186] The common electrode (120) is formed continuously on the upper surface of the light-emitting layer (412, 422, 432) and the photoelectric conversion layer (130), and is substantially formed on the front surface of the substrate (200). The common electrode (120) can apply a common voltage to the first, second, and third light-emitting elements (410, 420, 430) and the sensor (100).

[0187] The first common auxiliary layer (140) is located between the pixel electrodes (411, 421, 431, 110), the light-emitting layer (412, 422, 432), and the photoelectric conversion layer (130), and may be continuously formed on the upper side of the pixel electrodes (411, 421, 431, 110) and on the lower side of the light-emitting layer (412, 422, 432) and the photoelectric conversion layer (130).

[0188] The first common auxiliary layer (140) may be a charge auxiliary layer (e.g., a hole auxiliary layer) that facilitates the injection and / or movement of charge (e.g., a hole) from the pixel electrodes (411, 421, 431) to the light-emitting layer (412, 422, 432). For example, the HOMO energy level of the first common auxiliary layer (140) may be located between the HOMO energy level of the light-emitting layer (412, 422, 432) and the work function of the pixel electrodes (411, 421, 431), and the work function of the pixel electrodes (411, 421, 431), the HOMO energy level of the first common auxiliary layer (140), and the HOMO energy level of the light-emitting layer (412, 422, 432) may be progressively deeper. On the other hand, the LUMO energy level of the first common auxiliary layer (140) may be shallower than the LUMO energy level of the photoelectric conversion layer (130) and the work function of the pixel electrode (110), respectively.

[0189] The first common auxiliary layer (140) may include an organic material, an inorganic material, an organic-inorganic material, or a combination thereof that satisfies the HOMO energy level, such as a phthalocyanine compound such as copper phthalocyanine; DNTPD(N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolyl-amino)-phenyl]-biphenyl-4,4'-diamine), m-MTDATA(4,4',4"-[tris(3-methylphenyl)phenylamino] triphenylamine), TDATA(4,4'4"-Tris(N,Ndiphenylamino)triphenylamine), 2-TNATA(4,4',4"-tris{N,N-(2-naphthyl)-N-phenylamino}-triphenylamine), PEDOT / PSS(Poly(3,4-ethylenedioxythiophene) / Poly(4-styrenesulfonate)), PANI / DBSA (Polyaniline / Dodecylbenzenesulfonic acid), PANI / CSA (Polyaniline / Camphor sulfonicacid), PANI / PSS (Polyaniline / Poly(4-styrenesulfonate)), NPB (N,N'-di(naphthalene-l-yl)-N,N'-diphenylbenzidine), polyetherketone containing triphenylamine (TPAPEK), 4-Isopropyl-4'-methyldiphenyliodonium[Tetrakis(pentafluorophenyl)borate], HAT-CN (dipyrazino[2,3-f: 2',3'-h] quinoxaline-2,3,6,7,10,11-hexacarbonitrile), carbazole derivatives such as N-phenylcarbazole and polyvinylcarbazole, fluorene derivatives, TPD (N,N'-bis(3-methylphenyl)-N,N'-diphenyl-[1,1-biphenyl]-4,4'-diamine), TCTA (4,4',It may be a triphenylamine derivative such as 4"-tris(N-carbazolyl)triphenylamine), NPB (N,N'-di(naphthalene-l-yl)-N,N'-diphenyl-benzidine), TAPC (4,4'-Cyclohexylidene bis[N,N-bis(4-methylphenyl)benzenamine]), HMTPD (4,4'-Bis[N,N'-(3-tolyl)amino]-3,3'-dimethylbiphenyl), mCP (1,3-Bis(N-carbazolyl)benzene), or a combination thereof, but is not limited thereto. The first common auxiliary layer (140) may be one layer or two or more layers.

[0190] The second common auxiliary layer (150) may be located between the light-emitting layer (412, 422, 432), the photoelectric conversion layer (130), and the common electrode (120). The second common auxiliary layer (150) may be continuously formed above the light-emitting layer (412, 422, 432) and the photoelectric conversion layer (130) and below the common electrode (120).

[0191] The second common auxiliary layer (150) may be a charge auxiliary layer (e.g., an electron auxiliary layer) that facilitates the injection and / or movement of charge (e.g., electrons) from the common electrode (120) to the light-emitting layer (412, 422, 432). For example, the LUMO energy level of the second common auxiliary layer (150) may be located between the LUMO energy level of the light-emitting layer (412, 422, 432) and the work function of the common electrode (120), and the work function of the common electrode (120), the LUMO energy level of the second common auxiliary layer (150), and the LUMO energy level of the light-emitting layer (412, 422, 432) may be shallow in turn.

[0192] The second common auxiliary layer (150) may include organic, inorganic, organic-inorganic, or a combination thereof that satisfies the LUMO energy level, such as, for example, metal halides such as LiF, NaCl, CsF, RbCl, and RbI; lanthanide metals such as Yb; metal oxides such as Li2O and BaO; Liq(Lithium quinolate), Alq3(Tris(8-hydroxyquinolinato)aluminum), 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene, 2,4,6-tris(3'-(pyridin-3-yl)biphenyl-3-yl)-1,3,5-triazine, 2-(4-(N-phenylbenzoimidazolyl-1-ylphenyl)-9,10-dinaphthylanthracene, TPBi(1,3,5-Tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl), BCP(2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline), Bphen (4,7-Diphenyl-1,10-phenanthroline), TAZ(3-(4-Biphenylyl)-4-phenyl-5-tertbutylphenyl-1,2,4-triazole), NTAZ(4-(Naphthalen-1-yl)-3,5-diphenyl-4H-1,2,4-triazole), tBu-PBD(2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole), BAlq(Bis(2-methyl-8-quinolinolato-N1,O8)-(1,1'-Biphenyl-4-olato)aluminum), Bebq2(berylliumbis(benzoquinolin-10-olate), ADN(9,10-di(naphthalene-2-yl)anthracene), BmPyPhB(1,3-Bis[3,5-di(pyridin-3-yl)phenyl]benzene) or a combination thereof, but is not limited thereto.The first common auxiliary layer (140) may be one or more floors.

[0193] Each of the first, second, and third light-emitting elements (410, 420, 430) and the sensor (100) includes a pixel electrode (411, 421, 431, 110) facing a common electrode (120). One of the pixel electrode (411, 421, 431, 110) and the common electrode (120) is an anode and the other is a cathode. For example, the pixel electrode (411, 421, 431, 110) may be an anode and the common electrode (120) may be a cathode. The pixel electrode (411, 421, 431, 110) is separated for each subpixel (PX) and is electrically connected to a separate thin-film transistor (280) so that it can be driven independently.

[0194] The pixel electrodes (411, 421, 431, 110) and the common electrode (120) may each be a light-transmitting electrode or a reflective electrode, for example, at least one of the pixel electrodes (411, 421, 431, 110) and the common electrode (120) may be a light-transmitting electrode. The light-transmitting electrode may include the aforementioned transparent conductive film.

[0195] For example, when the pixel electrodes (411, 421, 431, 110) are light-transmitting electrodes and the common electrode (120) is a light-transmitting electrode, the sensor-embedded display panel (1000a) may be a bottom-emission type display panel that emits light toward the substrate (200). For example, when the pixel electrodes (411, 421, 431, 110) are light-transmitting electrodes and the common electrode (120) is a light-transmitting electrode, the sensor-embedded display panel (1000a) may be a top-emission type display panel that emits light toward the opposite side of the substrate (200). For example, when the pixel electrodes (411, 421, 431, 110) and the common electrode (120) are each light-transmitting electrodes, the sensor-embedded display panel (1000a) may be a both-side-emission type display panel.

[0196] For example, the pixel electrodes (411, 421, 431, 110) may be reflective electrodes and the common electrode (120) may be a light-transmitting electrode.

[0197] Each of the first, second, and third light-emitting elements (410, 420, 430) includes a light-emitting layer (412, 422, 432) located between the pixel electrode (411, 421, 431) and the common electrode (120). The light-emitting layer (412) included in the first light-emitting element (410), the light-emitting layer (422) included in the second light-emitting element (420), and the light-emitting layer (432) included in the third light-emitting element (430) may emit light of the same or different wavelength spectrums, for example, a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, or a combination thereof.

[0198] For example, when the first light-emitting element (410), the second light-emitting element (420), and the third light-emitting element (430) are a red light-emitting element, a green light-emitting element, and a blue light-emitting element, respectively, the light-emitting layer (412) included in the first light-emitting element (410) may be a red light-emitting layer that emits light of a red wavelength spectrum, the light-emitting layer (422) included in the second light-emitting element (420) may be a green light-emitting layer that emits light of a green wavelength spectrum, and the light-emitting layer (432) included in the third light-emitting element (430) may be a blue light-emitting layer that emits light of a blue wavelength spectrum. Here, the red wavelength spectrum, the green wavelength spectrum, and the blue wavelength spectrum may each have a maximum light-emitting wavelength in the wavelength regions of approximately 600 nm to less than 750 nm, approximately 500 nm to 600 nm, and approximately 400 nm to less than 500 nm.

[0199] For example, when at least one of the first light-emitting element (410), the second light-emitting element (420), and the third light-emitting element (430) is a white light-emitting element, the light-emitting layer of the white light-emitting element can emit light of the entire visible light spectrum, for example, of a wavelength spectrum of about 380 nm or more and less than 750 nm, about 400 nm to 700 nm, or about 420 nm to 700 nm.

[0200] The light-emitting layer (412, 422, 432) may include an organic light-emitting material, a quantum dot, a perovskite, or a combination thereof as a light-emitting material. For example, the light-emitting layer (412, 422, 432) may include an organic light-emitting material and may include at least one host material and a fluorescent or phosphorescent dopant.

[0201] Organic luminescent materials include perylene; rubrene; 4-(dicyanomethylene)-2-methyl-6-[p-(dimethylamino)styryl]-4H-pyran; coumarin or its derivative; carbazole or its derivative; TPBi(2,2',2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole); TBADN(2-t-butyl-9,10-di(naphth-2-yl)anthracene); AND(9,10-di(naphthalene-2-yl)anthracene); CBP(4,4'-bis(N-carbazolyl)-1,1'-biphenyl); TCTA(4,4',4"-tris(carbazol-9-yl)-triphenylamine); TPBi(1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene); TBADN (3-tert-butyl-9,10-di(naphth-2-yl)anthracene); CDBP (4,4'-dimethyl-biphenyl); MADN(2-Methyl-9,10-bis(naphthalen-2-yl)anthracene); TCP(1,3,5-Tris(carbazol-9-yl)benzene); Alq3(tris(8-hydroxyquinolino)lithium); organometallic compounds including Pt, Os, Ti, Zr, Hf, Eu, Tb, Tm, Rh, Ru, Re, Be, Mg, Al, Ca, Mn, Co, Cu, Zn, Ga, Ge, Pd, Ag and / or Au, derivatives thereof or combinations thereof may be, but are not limited thereto.

[0202] Quantum dots may include, for example, group II-VI semiconductor compounds, group III-V semiconductor compounds, group IV-VI semiconductor compounds, group IV semiconductor compounds, group I-III-VI semiconductor compounds, group I-II-IV-VI semiconductor compounds, group II-III-V semiconductor compounds, or combinations thereof. Group II-VI semiconductor compounds are binary semiconductor compounds such as, for example, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, or mixtures thereof; A ternary semiconductor compound such as CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, or a mixture thereof; and a quaternary semiconductor compound such as HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe, or a mixture thereof may be selected, but is not limited thereto.III-V semiconductor compounds may be selected from, but are not limited to, binary semiconductor compounds such as, for example, GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, or mixtures thereof; ternary semiconductor compounds such as GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, or mixtures thereof; and quaternary semiconductor compounds such as GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, or mixtures thereof. Group IV-VI semiconductor compounds may be selected from, but are not limited to, binary semiconductor compounds such as, for example, SnS, SnSe, SnTe, PbS, PbSe, PbTe, or mixtures thereof; ternary semiconductor compounds such as SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, or mixtures thereof; and quaternary semiconductor compounds such as SnPbSSe, SnPbSeTe, SnPbSTe, or mixtures thereof. Group IV semiconductor compounds may be selected from, for example, monatomic semiconductor compounds such as Si, Ge, or mixtures thereof; and binary semiconductor compounds such as SiC, SiGe, or mixtures thereof, but are not limited thereto. Group I-III-VI semiconductor compounds may be, for example, CuInSe2, CuInS2, CuInGaSe, CuInGaS, or mixtures thereof, but are not limited thereto. Group I-II-IV-VI semiconductor compounds may be selected from, for example, CuZnSnSe, CuZnSnS, or mixtures thereof, but are not limited thereto.Group II-III-V semiconductor compounds include, for example, InZnP, but are not limited thereto.

[0203] Perovskites are CH3NH3PbBr3, CH3NH3PbI3, CH3NH3SnBr3, CH3NH3SnI3, CH3NH3Sn 1x Pb x Br3, CH3NH3Sn 1x Pb x I3, HC(NH2)2PbI3, HC(NH2)2SnI3, (C4H9NH3)2PbBr4, (C6H5CH2NH3)2PbBr4, (C6H5CH2NH3)2PbI4, (C6H5C2H4NH3)2PbBr4, (C6H 13 NH3)2(CH3NH3) n1 Pb n I 3n +1 or a combination thereof, but not limited thereto.

[0204] The sensor (100) includes a photoelectric conversion layer (130) located between a pixel electrode (110) and a common electrode (120). The photoelectric conversion layer (130) may be arranged alongside the light-emitting layers (412, 422, 432) of the first, second, and third light-emitting elements (410, 420, 430) along the plane direction (e.g., xy direction) of the substrate (200), and the photoelectric conversion layer (130) and the light-emitting layers (412, 422, 432) may be located on the same plane.

[0205] The photoelectric conversion layer (130) can absorb light of a predetermined wavelength spectrum and convert it into an electrical signal, and can absorb light reflected by the recognition target (40) from at least one of the aforementioned first, second, and third light-emitting elements (410, 420, 430) and convert it into an electrical signal. The photoelectric conversion layer (130) can absorb light of, for example, a red wavelength spectrum, a green wavelength spectrum, a blue wavelength spectrum, an infrared wavelength spectrum, or a combination thereof.

[0206] For example, the photoelectric conversion layer (130) can selectively absorb light of a red wavelength spectrum having a maximum absorption wavelength of about 600 nm or more and less than 750 nm, and can absorb light emitted from the red light-emitting element among the first, second, and third light-emitting elements (410, 420, 430) that is reflected by the recognition target (40).

[0207] For example, the photoelectric conversion layer (130) can selectively absorb light of a green wavelength spectrum having a maximum absorption wavelength of about 500 nm to 600 nm, and can absorb light emitted from the green light-emitting element among the first, second, and third light-emitting elements (410, 420, 430) that is reflected by the recognition target (40).

[0208] For example, the photoelectric conversion layer (130) can selectively absorb light of a blue wavelength spectrum having a maximum absorption wavelength of about 380 nm or more and less than 500 nm, and can absorb light emitted from the blue light-emitting element among the first, second, and third light-emitting elements (410, 420, 430) that is reflected by the recognition target (40).

[0209] For example, the photoelectric conversion layer (130) can absorb light of the red wavelength spectrum, green wavelength spectrum and blue wavelength spectrum, that is, light of the visible light spectrum of about 380 nm or more and less than 750 nm, and can absorb light reflected by the recognition target (40) from a combination of light emitted from the first, second and third light-emitting elements (410, 420, 430).

[0210] The specific description of the photoelectric conversion layer (130) is as described above.

[0211] The thickness of the light-emitting layer (412, 422, 432) and the photoelectric conversion layer (130) may each be independently about 5 nm to 300 nm, and within the above range may be about 10 nm to 250 nm, about 20 nm to 200 nm, or about 30 nm to 180 nm. The difference in thickness between the light-emitting layer (412, 422, 432) and the photoelectric conversion layer (130) may be about 20 nm or less, and within the above range may be about 15 nm or less, about 10 nm or less, or about 5 nm or less, and the thickness of the light-emitting layer (412, 422, 432) and the photoelectric conversion layer (130) may be substantially the same.

[0212] An encapsulation layer (380) is formed on the first, second, and third light-emitting elements (410, 420, 430) and the sensor (100). The encapsulation layer (380) may include, for example, a glass plate, a metal thin film, an organic film, an inorganic film, an organic-inorganic film, or a combination thereof. The organic film may include, for example, an acrylic resin, (meth)acrylic resin, polyisoprene, vinyl resin, epoxy resin, urethane resin, cellulose resin, perylene resin, or a combination thereof, but is not limited thereto. The inorganic film may include, for example, oxides, nitrides and / or oxynitrides, and may be, for example, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, zirconium oxide, zirconium nitride, zirconium oxynitride, titanium oxide, titanium nitride, titanium oxynitride, hafnium oxide, hafnium nitride, hafnium oxynitride, tantalum oxide, tantalum nitride, tantalum oxynitride, lithium fluoride, or a combination thereof, but is not limited thereto. The organic-inorganic film may include, for example, polyorganosiloxane, but is not limited thereto. The encapsulation layer (380) may be one layer or two or more layers.

[0213] As such, the sensor-embedded display panel (1000a) according to the present embodiment can perform both a display function and a recognition function (e.g., a biometric recognition function) by including first, second, and third light-emitting elements (410, 420, 430) that emit light of a predetermined wavelength spectrum to display color, and a sensor (100) that absorbs light reflected by a recognition target (40) and converts it into an electrical signal, within the same plane on the substrate (200). Accordingly, unlike conventional display panels in which the sensor is manufactured as a separate module and attached to the outside of the display panel or formed on the bottom of the display panel, it can have improved performance without increasing the thickness, thereby enabling the realization of a slim, high-performance sensor-embedded display panel (1000a).

[0214] In addition, the sensor (100) uses light emitted from the first, second, and third light-emitting elements (410, 420, 430), so it can perform a recognition function (e.g., a biometric recognition function) without a separate light source. Therefore, since there is no need to provide a separate light source outside the display panel, the decrease in the aperture ratio of the display panel due to the area occupied by the light source can be prevented, and at the same time, the power consumption of the sensor-embedded display panel (1000a) can be improved by saving power consumed by a separate light source.

[0215] In addition, as described above, the first, second, and third light-emitting elements (410, 420, 430) and the sensor (100) share a common electrode (120), a first common auxiliary layer (140), and a second common auxiliary layer (150), thereby simplifying the structure and process compared to the case where the first, second, and third light-emitting elements (410, 420, 430) and the sensor (100) are formed in separate processes.

[0216] In FIG. 13, the sensor (100) is shown as being located between the second light-emitting element (420) and the third light-emitting element (430), but it may be located between two light-emitting elements selected from the first light-emitting element (410), the second light-emitting element (420), and the third light-emitting element (430).

[0217] In addition, as described above, since the sensor (100) can be placed anywhere in the non-display area (NDA), it can be placed in any number at any desired location on the sensor-embedded display panel (1000a). Thus, for example, by placing the sensor (100) randomly or regularly across the entire sensor-embedded display panel (1000a), the biometric recognition function can be performed at any part of the screen of an electronic device such as a mobile device, or the biometric recognition function can be selectively performed only at specific locations where the biometric recognition function is required, depending on the user's choice.

[0218] Hereinafter, another example of a sensor-embedded display panel according to one embodiment is described.

[0219] FIG. 14 is a cross-sectional view showing another example of a sensor-embedded display panel according to one embodiment.

[0220] Referring to FIG. 14, a sensor-embedded display panel (1000b) according to one embodiment includes a plurality of subpixels (PX) that display different colors, namely a first subpixel (PX1), a second subpixel (PX2), and a third subpixel (PX3) that display different colors selected from red, green, and blue, and the first subpixel (PX1), the second subpixel (PX2), and the third subpixel (PX3) each include a first light-emitting element (410), a second light-emitting element (420), and a third light-emitting element (430).

[0221] However, unlike the previously described embodiment, the sensor-embedded display panel (1000b) according to the present embodiment may further include a fourth light-emitting element (440) that emits light of an infrared wavelength spectrum. For example, the fourth light-emitting element (440) may be included in a fourth subpixel (PX4) adjacent to a first subpixel (PX1), a second subpixel (PX2), and / or a third subpixel (PX3), or it may be included in a non-display area (NDA). The fourth subpixel (PX4) may form a unit pixel (UP) together with the first subpixel (PX1), the second subpixel (PX2), and the third subpixel (PX3), and the unit pixels (UP) may be repeatedly arranged along rows and / or columns.

[0222] The description of the first subpixel (PX1), the second subpixel (PX2), the third subpixel (PX3), the first light-emitting element (410), the second light-emitting element (420), the third light-emitting element (430), and the sensor (100) is as described above.

[0223] The fourth light-emitting element (440) is placed on the substrate (200) and may be placed on the same plane as the first, second, and third light-emitting elements (410, 420, 430) and the sensor (100). The fourth light-emitting element (440) may be electrically connected to a separate thin-film transistor (280) and driven independently. The fourth light-emitting element (440) may have a structure in which a pixel electrode (441), a first common auxiliary layer (140), a light-emitting layer (442), a second common auxiliary layer (150), and a common electrode (120) are stacked in sequence, and among these, the common electrode (120), the first common auxiliary layer (140), and the second common auxiliary layer (150) may be shared with the first, second, and third light-emitting elements (410, 420, 430) and the sensor (100). The light-emitting layer (442) can emit light of an infrared wavelength spectrum, for example, about 750 nm or more, about 750 nm to 20 µm, about 780 nm to 20 µm, about 800 nm to 20 µm, about 750 nm to 15 µm, about 780 nm to 15 µm, about 800 nm to 15 µm, about 750 nm to 10 µm, about 780 nm to 10 µm, about 800 nm to 10 µm, about 750 nm to 5 µm, about 780 nm to 5 µm, about 800 nm to 5 µm, about 750 nm to 3 µm, about 780 nm to 3 µm, about 800 nm to 3 µm, about 750 nm to 2 µm, about 780 nm to 2 µm, about 800 nm to 2 µm, about 750 nm to It can have a maximum emission wavelength of 1.5㎛, approximately 780 nm to 1.5㎛, or approximately 800 nm to 1.5㎛.

[0224] The sensor (100) can convert light emitted from at least one of the first, second, third, and fourth light-emitting elements (410, 420, 430, 440) into an electrical signal by absorbing light reflected by a recognition target (40), such as a biological object or a tool. For example, the sensor (100) can convert light emitted from a fourth light-emitting element (440) that emits light in an infrared wavelength spectrum into an electrical signal by absorbing light reflected by a recognition target (40). In this case, the photoelectric conversion layer (130) of the sensor (100) may include an organic material, an inorganic material, an organic-inorganic material, or a combination thereof that selectively absorbs light of an infrared wavelength spectrum, such as a quantum dot, a quinoid metal complex, a polymethine compound, a cyanine compound, a phthalocyanine compound, a merocyanine compound, a naphthalocyanine compound, an immonium compound, a diimmonium compound, a triarylmethane compound, a dipyromethen compound, anthraquinone compound, naphthoquinone, a diquinone compound, a naphthoquinone compound, anthraquinone compound, a squarylium compound, a lylene compound, a perylene compound, a squarein compound, a pyrillium compound, a squarein compound, a thiopyrrolopyrrole compound, a boron dipyromethen compound, a nickel-dithiol complex, a croconium compound, a derivative thereof, or a combination thereof, but is not limited thereto.

[0225] The sensor-embedded display panel (1000b) according to the present example includes a fourth light-emitting element (440) that emits light of an infrared wavelength spectrum and a sensor (100) that absorbs light of an infrared wavelength spectrum. In addition to the recognition function (biometric recognition function) according to the above-described embodiment, the sensitivity of the sensor (100) can be improved even in a low-light environment, and the ability to detect three-dimensional images can be further enhanced by widening the dynamic range for detailed distinction between black and white brightness. Therefore, the sensing ability of the sensor-embedded display panel (1000b) can be further improved. In particular, since light of the infrared wavelength spectrum has long wavelength characteristics, it can penetrate deeper into the body and effectively obtain information located at different distances. Thus, in addition to fingerprints, images or changes of blood vessels such as veins, irises and / or faces can be effectively detected, thereby further expanding the scope of application.

[0226] In FIG. 14, the sensor (100) is shown as being located between the fourth light-emitting element (440) and the third light-emitting element (430), but it may be located between two light-emitting elements selected from the first light-emitting element (410), the second light-emitting element (420), the third light-emitting element (430), and the fourth light-emitting elements (440).

[0227] The sensor-embedded display panel (1000a, 1000b) described above can be applied to various electronic devices such as display devices. Electronic devices such as display devices can be applied to, for example, mobile phones, video phones, smartphones, mobile phones, smart pads, smart watches, digital cameras, tablet PCs, laptop PCs, notebooks, computer monitors, wearable computers, televisions, digital broadcasting terminals, e-books, PDAs (Personal Digital Assistants), PMPs (Portable Multimedia Players), EDAs (enterprise digital assistants), head-mounted display devices (HMDs), vehicle navigation systems, Internet of Things (IoT) devices, Internet of Everything (IoE) devices, drones, door locks, safes, ATMs, security devices, medical devices, or automotive electronic components, but are not limited thereto.

[0228] FIG. 15 is a schematic diagram illustrating an example of a smartphone as an electronic device according to one example.

[0229] Referring to FIG. 15, the electronic device (2000) includes the aforementioned sensor-embedded display panel (1000), and by placing the sensor (100) on the front or part of the sensor-embedded display panel (1000), the biometric recognition function may be performed at any part of the screen, or the biometric recognition function may be selectively performed only at specific locations where the biometric recognition function is required, depending on the user's choice.

[0230] An example of a method for recognizing a recognition target (40) in an electronic device (2000), such as a display device, is, for instance, driving a sensor (100) and first, second, and third light-emitting elements (410, 420, 430) (or first, second, third, and fourth light-emitting elements (410, 420, 430, 440)) of a sensor-embedded display panel (1000) to detect light reflected from the recognition target (40) among the light emitted from the first, second, and third light-emitting elements (410, 420, 430) (or first, second, third, and fourth light-emitting elements (410, 420, 430, 440)) at the sensor (100); comparing a pre-stored image of the recognition target (40) with an image of the recognition target (40) detected by the sensor (100); and determining the consistency of the compared images and, if consistent, recognizing The method may include the step of turning off the sensor (100) and driving the sensor-embedded display panel (1000) to display an image, depending on the determination that the recognition of the target (40) is complete and allowing user access to the display device.

[0231] FIG. 16 is a schematic diagram illustrating an example of a configuration diagram of an electronic device according to one embodiment.

[0232] Referring to FIG. 16, the electronic device (2000) may further include a bus (1310), a processor (1320), a memory (1330), and at least one additional device (1340) in addition to the aforementioned components. Information from the aforementioned sensor-embedded display panel (1000), processor (1320), memory (1330), and at least one additional device (1340) may be transmitted to each other through the bus (1310).

[0233] The processor (1320) may include one or more processing circuitries, such as hardware including logic circuits; a combination of hardware / software such as processor execution software; or a combination thereof. For example, the processing circuitry may be a central processing unit (CPU), an arithmetic logic unit (ALU), a digital signal processor, a microcomputer, a field programmable gate array (FPGA), a System-on-Chip (SoC), a programmable logic unit, a microprocessor, an application-specific integrated circuit (ASIC), etc. As an example, the processing circuitry may include a non-transitory computer readable storage device. The processor (1320) may, for example, control the display operation of a sensor-embedded display panel (1000) or control the sensor operation of a sensor (100).

[0234] The memory (1330) can store an instruction program, and the processor (1320) can execute the stored instruction program to perform functions related to the sensor-embedded display panel (1000).

[0235] One or more additional devices (1340) may be one or more communication interfaces (e.g., wireless communication interface, wired interface), user interfaces (e.g., keyboard, mouse, button, etc.), power supply and / or power supply interface, or a combination thereof.

[0236] The units and / or modules described herein may be implemented using hardware components and software components. For example, hardware components may include a microphone, an amplifier, a bandpass filter, an audio-to-digital converter, and a processing unit. A processing unit may be implemented using one or more hardware devices configured to perform and / or execute program code by performing arithmetic, logic, and input / output operations. A processing unit may include a processor, a controller and an arithmetic logic unit, a digital signal processor, a microcomputer, a field programmable array, a programmable logic unit, a microprocessor, or any other device capable of responding to instructions and executing instructions. A processing unit may access, store, operate, process, and generate data in response to the execution of an operating system (OS) and one or more software running on the operating system.

[0237] Software may include computer programs, code, instructions, or combinations thereof, and may transform a processing unit for a special purpose by independently or collectively directing and / or configuring the processing unit to operate as desired. Software and data may be permanently or temporarily implemented as a machine, component, physical or virtual equipment, computer storage media or device, or signal waves capable of providing or interpreting instructions or data to a processing unit. Software may also be distributed through networked computer systems, so that software may be stored and executed in a distributed manner. Software and data may be stored by one or more non-transient computer decoding storage devices.

[0238] The method according to the exemplary embodiment described above may be recorded in a non-transient computer decoding storage device comprising program instructions for implementing various operations of the exemplary embodiment described above. The storage device may also include program instructions, data files, data structures, etc., either alone or in combination. The program instructions recorded in the storage device may be those specifically designed for the present embodiment or may be those known and available to those skilled in the art of computer software. Examples of non-transient computer decoding storage devices may include magnetic media such as hard disks, floppy disks, and magnetic tapes; optical media such as CD-ROM disks, DVDs, and / or Blu-ray disks; optical-magnetic media such as optical discs; and hardware devices configured to store and execute program instructions, such as ROM, RAM, and flash memory. The device described above may be configured to operate as one or more software modules to perform the operations of the embodiment described above.

[0239] The above-described embodiment will be explained in more detail through the following examples. However, the following examples are for illustrative purposes only and do not limit the scope of the claims.

[0240] [ Examples ]

[0241] Examples 1-1 : Manufacturing of transparent conductive films

[0242] Copper with 99.999% purity at 25°C and 2.5 x 10 -6 SiO2 in torr A copper film with a thickness of 2 nm is formed by depositing it on a substrate (300 nm). The copper film is exposed to hydrogen sulfide (H2S) gas for 20 seconds at room temperature and atmospheric pressure to produce a film containing CuS nanostructures. The CuS film is then subjected to 150 ℃ / 8.0 x 10⁻⁶-4 Annealing is performed at torr for 1 hour. The film is then placed for 30 seconds in a gas atmosphere generated by vaporizing iodine solid on a hot plate at 30 ℃ to produce a transparent conductive film containing iodine-doped CuS nanostructures.

[0243] Examples 1-2 : Manufacturing of transparent conductive films

[0244] A transparent conductive film is prepared in the same manner as in Example 1-1, except that the thickness of the copper film is 5 nm.

[0245] Examples 1-3 : Manufacturing of transparent conductive films

[0246] A transparent conductive film is prepared in the same manner as in Example 1-1, except that the thickness of the copper film is 10 nm.

[0247] Examples 1-4 : Manufacturing of transparent conductive films

[0248] A transparent conductive film is prepared in the same manner as in Example 1-1, except that the thickness of the copper film is 20 nm.

[0249] Examples 1-5 : Manufacturing of transparent conductive films

[0250] The transparent conductive film prepared according to Example 1-1 is heat-treated at 150°C for 1 hour.

[0251] Examples 2-1 : Manufacturing of thin-film transistors

[0252] Example 2-1a

[0253] A substrate is prepared in which a MoS2 monolayer (0.7 nm) is formed using Chemical Vapor Deposition (CVD) on a silicon wafer substrate covered with SiO2 (3000 Å).

[0254] Example 2-1b

[0255] Separately, a silicon wafer substrate covered with another SiO2 (3000 Å) is 1.5 x 1.5 cm 2 Prepared as follows, source and drain electrode patterns (hereinafter referred to as electrode patterns) are formed using photolithography. On the formed electrode patterns, at 25 ℃ and 7.0 x 10 -7 A copper film with a thickness of 5 nm is formed by thermally evaporating 99.999% pure copper in a torr atmosphere. The electrode pattern on which the copper film is formed is lifted off to form a source electrode and a drain electrode formed of copper.

[0256] Prepare 1 ml of ammonium sulfide ((NH4)2S) solution and place the prepared copper electrode on top of the prepared ammonium sulfide solution. Expose the electrode to hydrogen sulfide (H2S) gas generated from the solution for about 20 seconds to form a source electrode and a drain electrode containing CuS.

[0257] The source electrode and drain electrode (hereinafter referred to as the CuS electrode) containing the above CuS are at 150 ℃ and 8.0 x 10 -4 Heat treatment is performed at torr for 1 hour. While vaporizing the iodine solid on a hot plate (30 ℃), a CuS electrode is placed on top and exposed for 30 seconds to form an iodine-doped CuS electrode.

[0258] An iodine-doped CuS electrode is transferred onto cleaned HfO, and a MoS2 monolayer prepared in Example 2-1a is transferred to form a transistor.

[0259] Examples 2-2 : Manufacturing of thin-film transistors

[0260] A thin-film transistor is fabricated in the same manner as in Example 2-1, except that the exposure time of the CuS electrode for iodine doping is 6 minutes.

[0261] Examples 2-3 : Manufacturing of thin-film transistors

[0262] A thin-film transistor is fabricated in the same manner as in Example 2-1, except that the thickness of the copper film is 10 nm.

[0263] Examples 2-4 : Manufacturing of thin-film transistors

[0264] A thin-film transistor is fabricated in the same manner as in Example 2-1, except that the thickness of the copper film is 20 nm.

[0265] Examples 2-5 : Manufacturing of thin-film transistors

[0266] The thin-film transistor prepared according to Example 2-1 is heat-treated at 150°C for 1 hour.

[0267] Comparative example 2-1 : Manufacturing of thin-film transistors

[0268] A silicon wafer substrate covered with SiO2 (3000 Å) is 1.5 x 1.5 cm 2 Prepared as follows, source and drain electrode patterns (hereinafter referred to as electrode patterns) are formed using photolithography. On the formed electrode patterns, at 25 ℃ and 7.0 x 10 -7 A copper film with a thickness of 5 nm is formed by thermally evaporating 99.999% pure copper in a torr atmosphere. The electrode pattern on which the copper film is formed is lifted off to form a source electrode and a drain electrode formed of copper.

[0269] Prepare 1 ml of ammonium sulfide ((NH4)2S) solution and place the prepared copper electrode on top of the prepared ammonium sulfide solution. Expose the electrode to hydrogen sulfide (H2S) gas generated from the solution for about 20 seconds to form a source electrode and a drain electrode containing CuS.

[0270] A CuS electrode is transferred onto a cleaned HfO and a MoS2 monolayer prepared in Example 2-1a is transferred to form a transistor.

[0271] Evaluation 1: Confirmation of doping in transparent conductive film

[0272] X-ray diffraction analysis was performed on the transparent conductive film according to Examples 1-3 before and after iodine doping, and the results are shown in FIG. 17. FIG. 17 is a graph showing the results of X-ray diffraction analysis of the transparent conductive film according to Examples 1-3 before and after iodine doping. Referring to FIG. 17, a peak corresponding to CuI appeared in the X-ray diffraction analysis graph after iodine doping compared to the X-ray diffraction analysis graph before iodine doping.

[0273] Rating 2: Light transmittance

[0274] The light transmittance according to wavelength for the transparent conductive films prepared according to Examples 1-1 to 1-3 and a comparative example ITO film with a thickness of 130 nm was measured using a haze meter (Manufacturer: Agilent, Model: Carry 5000) and is listed in Table 1 below.

[0275] Wavelength (nm) Light transmittance (%) Example 1-1 Examples 1-2 Examples 1-3 ITO (Comparative Example) 550 94 88 82 75 1000 89　 84　 79 83 1500 88　 81　 72 60 2000 88　 80　 69 39 2500 86　 78　 63 20

[0276] Referring to Table 1, it can be seen that the light transmittance of the transparent conductive films according to Examples 1-1 to 1-3 is higher than that of the ITO film.

[0277] Evaluation 3: Transparent conductive film surface resistance

[0278] For the transparent conductive films according to Examples 1-3 and 1-4, Keithley 4200A-SCS (Keithley Instruments ) The sheet resistance is measured using [the method] and is shown in Fig. 18.

[0279] FIG. 18 is a graph showing the sheet resistance measurement results of transparent conductive films according to Examples 1-3 and 1-4. Referring to FIG. 18, the sheet resistance of the transparent conductive films according to Examples 1-3 and 1-4 was found to be significantly low.

[0280] Evaluation 4: Transparent conductive film according to doping time surface resistance

[0281] Transparent conductive films containing iodine-doped CuS nanostructures were fabricated by varying the exposure time of films containing 10 nm thick CuS nanostructures to a gas atmosphere generated by vaporizing iodine solids, in the same manner as in Examples 1-3, and then the sheet resistance was measured using a Keithley 4200A-SCS (Keithley Instruments) and is shown in FIG. 19. FIG. 19 is a graph showing the sheet resistance of films containing CuS nanostructures according to the doping treatment time. Referring to FIG. 19, it can be seen that the sheet resistance is significantly reduced after doping compared to before doping.

[0282] Evaluation 4: Reliability of Transparent Conductive Film

[0283] After storing the transparent conductive film according to Examples 1-3 at room temperature for 16 days, Keithley 4200A-SCS (Keithley Instruments ) Sheet resistance is measured using [the method] and is shown in FIG. 20. FIG. 20 is a graph showing the change in sheet resistance of the transparent conductive film according to Example 1-3 according to the storage time at room temperature. Referring to FIG. 20, it can be seen that the sheet resistance of the transparent conductive film according to Example 1-3 does not change significantly over time.

[0284] Evaluation 5: Reliability of transparent conductive film

[0285] The transparent conductive film and ITO film according to Examples 1-3 were each mounted on a bending machine (Sciencetown Film Bending System (ST-0810-3S)) and subjected to 100,000 repeated bending cycles (radius of curvature (R): 4 mm), after which the sheet resistance was measured using a Keithley 4200A-SCS (Keithley Instruments) and is shown in FIG. 21. FIG. 21 is a graph showing the change in sheet resistance according to the number of repeated bending cycles (radius of curvature (R): 4 mm) of the transparent conductive film and ITO film according to Examples 1-3.

[0286] The transparent conductive film and ITO film according to Examples 1-3 (verification required) were each mounted on a bending machine (Sciencetown Film Bending System (ST-0810-3S)) and subjected to 50,000 repetitive bending cycles (radius of curvature (R): 3 mm), after which Keithley 4200A-SCS Sheet resistance was measured using Keithley Instruments and is shown in FIG. 22. FIG. 22 is a graph showing the change in sheet resistance according to the number of repeated bending (radius of curvature (R): 3 mm) of the transparent conductive film and ITO film according to Examples 1-3.

[0287] Referring to FIGS. 21 and FIGS. 22, it can be seen that the sheet resistance of the transparent conductive film according to Example 1-3 shows little change even after repeated bending, whereas the sheet resistance of the ITO film increases significantly with repeated bending.

[0288] Evaluation 7: Electrical properties of transparent conductive films

[0289] The conductivity and carrier density of the transparent conductive film, CuS film (5 nm), and CuS film (10 nm) according to Examples 1-2 and 1-3 were measured using a Hall measurement analysis instrument (ECOPIA HMS-5300) and are listed in Table 2 below.

[0290] Examples 1-2 CuS film (5 nm) Examples 1-3 CuS film (10 nm) Conductivity (S / cm) 4.75×10 3 8.19×10 2 3.29×10 3 2.80×10 2 Carrier density (cm²) -3 ) 2.49×10 23 1.25×10 22 1.45×10 21 7.91×10 20

[0291] Referring to Table 2, it can be seen that the transparent conductive films according to Examples 1-2 and 1-3 have superior conductivity and carrier density compared to the CuS film. evaluation 6: Confirmation of doping in thin-film transistors

[0292] SEM-EDS of a thin-film transistor according to Example 2-1 ( Scanning Electron Microscopy The iodine element was analyzed using Energy Dispersive X-Ray Spectroscopy (SEM) and is shown in Fig. 23. Fig. 23 is SEM-EDS ( Scanning Electron Microscopy This figure shows the results of iodine element analysis of the thin-film transistor according to Example 2-1 using Energy Dispersive X-Ray Spectroscopy. Referring to Figure 23, it was found that iodine elements were doped into the source electrode, the drain electrode, and the channel between them. This indicates that CuS and MoS2 are simultaneously doped with iodine.

[0293] Evaluation 7: Electrical Characteristics of Thin-Film Transistors

[0294] The electrical characteristics (threshold voltage, on / off current, and subthreshold swing) of the thin-film transistors of Example 2-1, Example 2-2, and Comparative Example 2-1 are evaluated using an IV curve measurement device (FET characteristic measurement device (Keithley 4200A-SCS). The results are listed in Table 3 below.

[0295] Comparative Example 2-1 Example 2-1 Example 2-2 Threshold voltage (V th ) (V) -3.8 -2.8 -2 On / off current (A) 3×10 -5 / 6.4×10 -12 5×10 -6 / 6.9×10 -14 1.4×10 -6 / 2.5×10 -14 Subthreshold swing (mV) 160 100 80

[0296] Referring to Table 3, it can be seen that the thin-film transistors according to Examples 2-1 and 2-2 have increased threshold voltage and on / off current and decreased subthreshold swing compared to the thin-film transistor according to Comparative Example 2-1. A decrease in subthreshold swing implies a decrease in defect and trap density. From this, it can be confirmed that the electrical characteristics of the thin-film transistors according to Examples 2-1 and 2-2 are improved compared to the thin-film transistor according to Comparative Example 2-1. Although preferred embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements by those skilled in the art using the basic concept of the present invention as defined in the following claims also fall within the scope of the present invention. Explanation of the symbols

[0297] 10: Transistor 13: Gate electrode 15: Gate insulating film 17a: Source electrode 17b: Drain electrode 19: Semiconductor Thin Film 100, 100a, 100b, 100c: Sensor 110: First electrode 120: Second electrode 130: Photoelectric conversion layer 140, 150: Auxiliary layer 11, 200: Substrate 220: First photodiode 230: Second photodiode 300: Image sensor 410, 420, 430: Light-emitting elements 1000: Sensor-embedded display panel 2000: Electronic Devices

Claims

Claim 1 A transparent conductive film comprising a halogen-doped metal chalcogenide compound and having a sheet resistance of 60 ohm / sq. or less at room temperature. Claim 2 In claim 1, the metal chalcogenide compound is a transparent conductive film represented by the following chemical formula 1: [Chemical Formula 1]M x X y In the above chemical formula 1, M is selected from transition metals, alkali metals, alkaline earth metals and combinations thereof, X is selected from S, Se, Te and combinations thereof, and x and y are determined by the stoichiometric ratio of M and X. Claim 3 In paragraph 2, M in the above chemical formula 1 is a transparent conductive film selected from Cu, Fe, Zn, Co, Mo, W, Li, and combinations thereof. Claim 4 In claim 1, the halogen is a transparent conductive film selected from fluorine, chlorine, bromine, iodine, and combinations thereof. Claim 5 In claim 1, the transparent conductive film wherein the content of the halogen is in the range of 0.30 atomic% to 0.70 atomic% with respect to the total number of atoms of the transparent conductive film. Claim 6 In claim 1, the transparent conductive film is a transparent conductive film having a light transmittance of 80% or more in a wavelength region of 550 nm or more. Claim 7 In claim 1, the transparent conductive film is a transparent conductive film having a sheet resistance increase rate of 20% or less after 10,000 repetitions of bending with a radius of curvature of 4 mm or less. Claim 8 In claim 1, the carrier density of the transparent conductive film is 1.0 × 10⁻⁶ 21 cm -3 Transparent conductive film of the above. Claim 9 A transparent conductive film according to claim 1, wherein the work function of the halogen-doped metal chalcogenide compound of the transparent conductive film is 5.2 eV or higher. Claim 10 In claim 1, the transparent conductive film is a transparent conductive film that does not contain organic material. Claim 11 A method for manufacturing a transparent conductive film, comprising the steps of: exposing a metal film to a chalcogen element-containing material to produce a film containing a metal chalcogenide compound; and exposing the film containing the metal chalcogenide compound to a halogen element-containing material that does not contain metal to produce a transparent conductive film containing a halogen-doped metal chalcogenide compound. Claim 12 In claim 11, a method for manufacturing a transparent conductive film wherein the metal film is exposed to a chalcogen element-containing material for 10 to 50 seconds. Claim 13 A method for manufacturing a transparent conductive film according to claim 11, wherein the film comprising the metal chalcogenide compound is exposed to a halogen element-containing material for 10 to 50 seconds. Claim 14 A method for manufacturing a transparent conductive film according to claim 11, wherein the manufacturing method further comprises a process of heat-treating a transparent conductive film comprising a metal chalcogenide compound doped with a halogen. Claim 15 A method for manufacturing a transparent conductive film according to claim 14, wherein the heat treatment is performed at 250°C or lower. Claim 16 A thin-film transistor comprising a transparent conductive film according to any one of claims 1 to 10. Claim 17 In claim 16, the thin film transistor comprises a semiconductor thin film, a gate electrode that partially overlaps with the semiconductor thin film, and a source electrode and a drain electrode that are electrically connected to the semiconductor thin film, wherein the source electrode and the drain electrode comprise the transparent conductive film. Claim 18 A thin-film transistor comprising a semiconductor thin film, a gate electrode that partially overlaps with the semiconductor thin film, and a source electrode and a drain electrode electrically connected to the semiconductor thin film, wherein the source electrode and the drain electrode comprise a first metal chalcogenide compound, the semiconductor thin film comprises a second metal chalcogenide compound, and the first metal chalcogenide compound and the second metal chalcogenide compound are doped with a halogen. Claim 19 A device comprising a transparent conductive film according to any one of claims 1 to 10. Claim 20 A method for manufacturing a transparent conductive film according to claim 11, wherein the halogen element-containing material is a halogen molecule or a halogen-containing compound in a gaseous, liquid, or solid state, and the halogen molecule is F2, Cl2, Br2, or I2 and the halogen-containing compound is HF, HCl, or HI.

Images