Photolithography projection objective lens and photolithography machine

Abstract

The photolithography projection objective lens (50) includes a first lens group (G1), a second lens group (G2), a third lens group (G3), a fourth lens group (G4), and a fifth lens group (G5) arranged sequentially along the optical axis. The focal power 1 of the first lens group (G1), the focal power 2 of the second lens group (G2), the focal power 3 of the third lens group (G3), the focal power 4 of the fourth lens group (G4), and the focal power 5 of the fifth lens group (G5) satisfy the following equations (I) and (II). Based on satisfying high exposure resolution, the number of lenses and the number of aspherical lenses can be reduced, the design cost and manufacturing cycle of the photolithography projection objective lens (50) can be reduced, and product market competitiveness can be improved. At the same time, through a combination of focusing power between positive and negative phases, the image quality correction capability of the photolithography projection objective lens (50) is improved, thereby improving exposure imaging quality and realizing a smaller exposure resolution and CDU. This photolithography projection objective lens (50) is applied to a photolithography machine. 1 / 350mm-1<1<1 / 150mm-1, -1 / 30mm-1<2<-1 / 150mm-1(I) 1 / 200mm-1<3<1 / 80mm-1, -1 / 500mm-1<4<-1 / 1500mm-1, 1 / 200mm-1<5<1 / 80mm-1(II)

Description

Technology Field

[0001] The present invention relates to the field of photolithography technology, and more specifically, to a photolithography projection objective lens and a photolithography machine. Background Technology

[0002] Photolithography is a technology that uses light to project and copy mask patterns, and integrated circuits are fabricated using projection exposure devices. Projection exposure devices image different mask patterns onto substrates, such as silicon wafers or LCD panels. This is used to manufacture a series of structures, including integrated circuits, thin-film magnetic heads, liquid crystal displays, or microelectromechanical systems (MEMS). Over the past few decades, the technological level of exposure devices has continuously advanced, meeting the demands for smaller line dimensions, larger exposure areas, higher reliability and productivity, and lower costs.

[0003] Current photolithography projection objective lenses have a large number of lenses (typically 29 to 31) and a complex structure, resulting in a relatively high overall manufacturing cost. In addition, the overall transmittance of the lenses is low, and monochromatic aberrations such as astigmatism and spherical aberration are not well corrected, leading to performance degradation and affecting actual exposure performance and resolution.

[0004] The objective of the present invention is to provide a photolithography projection objective lens and a photolithography machine. Through this, the invention aims to solve the problems of existing photolithography projection objective lenses, such as complex structure, high manufacturing costs, low exposure quality, and low resolution.

[0005] To achieve the above objective, the present invention provides a photolithography projection objective lens. It includes a first lens group, a second lens group, a third lens group, a fourth lens group, and a fifth lens group arranged sequentially along an optical axis. The focusing power of the first lens group 1, focusing power of the second lens group 2, the focusing power of the third lens group above 3, the focusing power of the fourth lens group 4 and the focusing power of the 5th lens group 5 satisfies the following relationship.

[0006] 1 / 350mm -1 < 1<1 / 150mm -1 ;

[0007] -1 / 30mm -1 < 2<-1 / 150mm -1 ;

[0008] 1 / 200mm -1 < 3<1 / 80mm -1 ;

[0009] -1 / 500mm -1 < 4<-1 / 1500mm -1 ;

[0010] 1 / 200mm -1 < 5<1 / 80mm -1 .

[0011] Optionally, the sum of the quantities of lenses in the first lens group, the second lens group, the third lens group, the fourth lens group, and the fifth lens group is 19 or more and 25 or less.

[0012] Optionally, the sum of the quantities of aspherical lenses in the first lens group, the second lens group, the third lens group, the fourth lens group, and the fifth lens group is 3 or more and 6 or less. Additionally, each of the aspherical lenses includes at least one aspherical surface.

[0013] Optionally, the aspherical lens is the lens with the smallest light-transmitting aperture in the lens group to which it is located.

[0014] Optionally, the first lens group comprises a first lens I and a second lens I arranged sequentially along the optical axis. The second lens group comprises a first lens II, a second lens II, and a third lens II arranged sequentially along the optical axis. The third lens group comprises a first lens III, a second lens III, and a third lens III arranged sequentially along the optical axis. The fourth lens group comprises a first lens IV, a second lens IV, a third lens IV, a fourth lens IV, and a fifth lens IV arranged sequentially along the optical axis. The fifth lens group comprises a first lens V, a second lens V, a third lens V, a fourth lens V, a fifth lens V, and a sixth lens V arranged sequentially along the optical axis.

[0015] The first lens I, the second lens I, and the fifth lens IV are plano-convex lenses. The first lens II, the third lens III, the fourth lens V, the fifth lens V, and the sixth lens V are convex-concave meniscus lenses. The first lens III, the third lens IV, and the fourth lens IV are concave-convex meniscus lenses. The second lens II, the third lens II, the first lens IV, the second lens IV, and the second lens V are biconcave lenses. The second lens III, the first lens V, and the third lens V are biconvex lenses.

[0016] Optionally, at least the first lens II, the second lens IV, and the sixth lens V are aspherical lenses.

[0017] Optionally, the first lens group includes a first lens I arranged sequentially along the optical axis. The second lens group includes a first lens II, a second lens II, and a third lens II arranged sequentially along the optical axis. The third lens group includes a first lens III, a second lens III, and a third lens III arranged sequentially along the optical axis. The fourth lens group includes a first lens IV, a second lens IV, a third lens IV, a fourth lens IV, and a fifth lens IV arranged sequentially along the optical axis. The fifth lens group includes a first lens V, a second lens V, a third lens V, a fourth lens V, a fifth lens V, a sixth lens V, and a seventh lens V arranged sequentially along the optical axis.

[0018] The third lens III is a plano-convex lens. The first lens II, the fifth lens V, the sixth lens V, and the seventh lens V are convex-concave meniscus lenses. The third lens II, the first lens III, and the third lens IV are concave-convex meniscus lenses. The second lens II, the first lens IV, the second lens IV, and the second lens V are biconcave lenses. The first lens I, the second lens III, the fourth lens IV, the fifth lens IV, the first lens V, the third lens V, and the fourth lens V are biconvex lenses.

[0019] Optionally, at least the first lens II, the second lens IV, and the second lens V are aspherical lenses.

[0020] Optionally, the first lens group comprises a first lens I, a second lens I, and a third lens I arranged sequentially along the optical axis. The second lens group comprises a first lens II, a second lens II, and a third lens II arranged sequentially along the optical axis. The third lens group comprises a first lens III, a second lens III, and a third lens III arranged sequentially along the optical axis. The fourth lens group comprises a first lens IV, a second lens IV, a third lens IV, a fourth lens IV, and a fifth lens IV arranged sequentially along the optical axis. The fifth lens group comprises a first lens V, a second lens V, a third lens V, a fourth lens V, a fifth lens V, a sixth lens V, and a seventh lens V arranged sequentially along the optical axis.

[0021] The third lens III and the fourth lens IV are plano-convex lenses. The first lens II, the fourth lens V, the fifth lens V, the sixth lens V, and the seventh lens V are convex-concave meniscus lenses. The first lens III and the third lens IV are concave-convex meniscus lenses. The second lens II, the third lens II, the first lens IV, the second lens IV, and the second lens V are biconcave lenses. The second lens I, the third lens I, the second lens III, the fifth lens IV, the first lens V, and the third lens V are biconvex lenses. The first lens I is a planar lens.

[0022] Optionally, at least the first lens II, the second lens IV, and the seventh lens V are aspherical lenses.

[0023] Optionally, the fifth lens group further includes an eighth lens V. The eighth lens V is the lens closest to the image plane of the fifth lens group, and the eighth lens V is a flat lens.

[0024] Optionally,

[0025] It further includes an aperture located between the fourth lens group and the fifth lens group.

[0026] Optionally, the fourth lens group comprises at least two lenses having an Abbe number of 70 or higher.

[0027] Optionally, the fifth lens group comprises at least two lenses with an Abbe number of 70 or higher and at least one lens with an Abbe number of less than 50.

[0028] Optionally, the exposure wavelength of the photolithography projection objective lens is 360 nm to 370 nm, and the image-side numerical aperture is 0.45 to 0.6.

[0029] Optionally, the image-side field of view of the photolithography projection objective lens is 32.4 mm or less.

[0030] The present invention provides a photolithography machine comprising the above-mentioned photolithography projection objective lens.

[0031] The photolithography projection objective lens provided in the present invention includes a first lens group, a second lens group, a third lens group, a fourth lens group, and a fifth lens group arranged sequentially along an optical axis. The focusing power of the first lens group 1, Focusing power of the second lens group 2. Focusing power of the 3rd lens group 3, 4th lens group focusing power Focusing power of the 4th and 5th lens groups 5 is 1 / 350mm -1 < 1<1 / 150mm -1 , -1 / 30mm -1 < 2<-1 / 150mm -1 , 1 / 200mm -1 < 3<1 / 80mm -1 , -1 / 500mm -1 < 4<-1 / 1500mm -1 , 1 / 200mm -1 < 5<1 / 80mm -1 It satisfies [the requirements]. Based on the satisfaction of high exposure resolution, the number of lenses and aspherical lenses can be reduced, the design cost and manufacturing cycle of the photolithography projection objective lens can be reduced, and the product's market competitiveness can be improved. At the same time, through a combination of focusing power between positive and negative phases, the image quality correction capability of the photolithography projection objective lens is improved, thereby enhancing exposure imaging quality and realizing a smaller exposure resolution and CDU. Accordingly, the present invention further provides a photolithography machine. Brief explanation of the drawing

[0032] FIG. 1 is a structural diagram of a photolithography projection objective lens according to Example 1 of the present invention. Figure 2 is a telecentricity distribution of the photolithography projection objective lens in Figure 1. Figure 3a is a meridional aberration distribution diagram in the pupil when the height of the viewing point on the opposite object side is 1 under i-line illumination of the photolithography projection objective lens in Figure 1. FIG. 3b is a sagittal aberration distribution diagram in the pupil when the height of the viewing point on the opposite object side is 1 under i-line illumination of the photolithography projection objective lens in FIG. 1. Figure 4a is a meridional aberration distribution in the pupil when the height of the relative object-side viewing point is 0.74 under i-line illumination of the photolithography projection objective lens in Figure 1. FIG. 4b is a sagittal aberration distribution diagram in the pupil when the height of the relative object-side viewing point is 0.74 under i-line illumination of the photolithography projection objective lens in FIG. 1. Figure 5a is a meridional aberration distribution in the pupil when the height of the relative object-side viewing point is 0.49 under i-line illumination of the photolithography projection objective lens in Figure 1. FIG. 5b is a sagittal aberration distribution diagram in the pupil when the height of the relative object-side viewing point is 0.49 under i-line illumination of the photolithography projection objective lens in FIG. 1. Figure 6a is a meridional aberration distribution in the pupil when the height of the viewing point on the opposite object side is 0.25 under i-line illumination of the photolithography projection objective lens in Figure 1. FIG. 6b is a sagittal aberration distribution diagram in the pupil when the height of the relative object-side viewing point is 0.25 under i-line illumination of the photolithography projection objective lens in FIG. 1. Figure 7a is a curvature distribution of the image plane of the photolithography projection objective lens in Figure 1. Figure 7b is a distortion distribution diagram of the image plane of the photolithography projection objective lens in Figure 1. FIG. 8 is a structural diagram of a photolithography machine according to Example 1 of the present invention. FIG. 9 is a structural diagram of a photolithography projection objective lens according to Example 2 of the present invention. Figure 10 is a telecentricity distribution of the photolithography projection objective lens in Figure 9. FIG. 11a is a meridional aberration distribution diagram in the pupil when the height of the viewing point on the opposite object side is 1 under i-line illumination of the photolithography projection objective lens in FIG. 9. FIG. 11b is a sagittal aberration distribution diagram in the pupil when the height of the viewing point on the opposite object side is 1 under i-line illumination of the photolithography projection objective lens in FIG. 9. FIG. 12a is a meridional aberration distribution diagram in the pupil when the height of the relative object-side viewing point is 0.74 under i-line illumination of the photolithography projection objective lens in FIG. 9. FIG. 12b is a sagittal aberration distribution diagram in the pupil when the height of the relative object-side viewing point is 0.74 under i-line illumination of the photolithography projection objective lens in FIG. 9. FIG. 13a is a meridional aberration distribution in the pupil when the height of the relative object-side viewing point is 0.49 under i-line illumination of the photolithography projection objective lens in FIG. 9. FIG. 13b is a sagittal aberration distribution diagram in the pupil when the height of the relative object-side viewing point is 0.49 under i-line illumination of the photolithography projection objective lens in FIG. 9. FIG. 14a is a meridional aberration distribution diagram in the pupil when the height of the viewing point on the opposite object side is 0.25 under i-line illumination of the photolithography projection objective lens in FIG. 9. FIG. 14b is a sagittal aberration distribution in the pupil when the height of the relative object-side viewing point is 0.25 under i-line illumination of the photolithography projection objective lens in FIG. 9. Figure 15a is a curvature distribution of the image plane of the photolithography projection objective lens in Figure 9. Figure 15b is a distortion distribution of the photolithography projection objective lens in Figure 9. FIG. 16 is a structural diagram of a photolithography projection objective lens according to Example 3 of the present invention. Figure 17 is a telecentricity distribution of the photolithography projection objective lens in Figure 16. FIG. 18a is a meridional aberration distribution diagram in the pupil when the height of the relative object-side viewing point is 1 under i-line illumination of the photolithography projection objective lens in FIG. 16. FIG. 18b is a sagittal aberration distribution diagram in the pupil when the height of the viewing point on the opposite object side is 1 under i-line illumination of the photolithography projection objective lens in FIG. 16. FIG. 19a is a meridional aberration distribution diagram in the pupil when the height of the relative object-side viewing point is 0.74 under i-line illumination of the photolithography projection objective lens in FIG. 16. FIG. 19b is a sagittal aberration distribution in the pupil when the height of the relative object-side viewing point is 0.74 under i-line illumination of the photolithography projection objective lens in FIG. 16. FIG. 20a is a meridional aberration distribution diagram in the pupil when the height of the relative object-side viewing point is 0.49 under i-line illumination of the photolithography projection objective lens in FIG. 16. FIG. 20b is a sagittal aberration distribution diagram in the pupil when the height of the relative object-side viewing point is 0.49 under i-line illumination of the photolithography projection objective lens in FIG. 16. FIG. 21a is a meridional aberration distribution in the pupil when the height of the relative object-side viewing point is 0.25 under i-line illumination of the photolithography projection objective lens in FIG. 16. FIG. 21b is a sagittal aberration distribution in the pupil when the height of the relative object-side viewing point is 0.25 under i-line illumination of the photolithography projection objective lens in FIG. 16. Figure 22a is a curvature distribution of the image plane of the photolithography projection objective lens in Figure 16. FIG. 22b is a distortion distribution diagram of the image plane of the photolithography projection objective lens in FIG. 16. Specific details for implementing the invention

[0033] Hereinafter, specific embodiments of the present invention will be described in more detail with reference to the accompanying drawings. The advantages and features of the present invention will become clearer through the following description. All accompanying drawings are in a highly simplified form and all proportions are inaccurate. It should be noted that this is used only to assist in conveniently and clearly explaining the embodiments of the present invention.

[0034] Example 1

[0035] FIG. 1 is a structural diagram of a photolithography projection objective lens according to the present embodiment. As shown in FIG. 1, the photolithography projection objective lens includes a first lens group (G1), a second lens group (G2), a third lens group (G3), a fourth lens group (G4), and a fifth lens group (G5) arranged sequentially along the optical axis from the object plane (OBJ0) toward the image plane (IMA0). The focusing power of the first lens group (G1). 1, the focusing power of the second lens group (G2) 2, the focusing power of the third lens group (G3) 3, the focusing power of the fourth lens group (G4) 4 and the focusing power of the 5th lens group (G5) 5 satisfies the following relationship.

[0036] 1 / 350mm -1 < 1<1 / 150mm -1 ;

[0037] -1 / 30mm -1 < 2<-1 / 150mm -1 ;

[0038] 1 / 200mm -1 < 3<1 / 80mm -1 ;

[0039] -1 / 500mm -1 < 4<-1 / 1500mm -1 ;

[0040] 1 / 200mm -1 < 5<1 / 80mm -1 .

[0041] This embodiment designs a combination of focal powers for the first lens group (G1), the second lens group (G2), the third lens group (G3), the fourth lens group (G4), and the fifth lens group (G5). By doing so, the number of lenses and aspherical lenses can be reduced based on meeting high exposure resolution, the design cost and manufacturing cycle of the photolithography projection objective lens can be reduced, and product market competitiveness can be improved. Additionally, the first lens group (G1), the third lens group (G3), and the fifth lens group (G5) have positive focal powers, while the second lens group (G2) and the fourth lens group (G4) have negative focal powers. Through the combination of focal powers between positive and negative phases, the image quality correction capability of the photolithography projection objective lens is improved, thereby enhancing exposure imaging quality and realizing smaller exposure resolution and CDU (linewidth uniformity).

[0042] Referring further to FIG. 1, in this embodiment, the magnification of the photolithography projection objective lens is -0.2, and the exposure light is i-line light (wavelength 360 nm to 370 nm). The image-side numerical aperture is 0.45 to 0.6, and the image-side field of view diameter is 32.4 mm or less. This can achieve an exposure resolution of at least 320 nm, but is not limited thereto.

[0043] Specifically, the first lens group (G1) includes a first lens I (L101) and a second lens I (L102) arranged sequentially along the optical axis. The second lens group (G2) includes a first lens II (L201), a second lens II (L202), and a third lens II (L203) arranged sequentially along the optical axis. The third lens group (G3) includes a first lens III (L301), a second lens III (L302), and a third lens III (L303) arranged sequentially along the optical axis. The fourth lens group (G4) includes a first lens IV (L401), a second lens IV (L402), a third lens IV (L403), a fourth lens IV (L404), and a fifth lens IV (L405) arranged sequentially along the optical axis. The fifth lens group (G5) comprises a first lens V (L501), a second lens V (L502), a third lens V (L503), a fourth lens V (L504), a fifth lens V (L505), a sixth lens V (L506), and an eighth lens V (L508) arranged sequentially along the optical axis. Here, the first lens I (L101), the second lens I (L102), and the fifth lens IV (L405) are plano-convex lenses. The first lens II (L201), the third lens III (L303), the fourth lens V (L504), the fifth lens V (L505), and the sixth lens V (L506) are convex-concave meniscus lenses. The first lens III (L301), the third lens IV (L403), and the fourth lens IV (L404) are concave-convex meniscus lenses. The second lens II (L202), the third lens II (L203), the first lens IV (L401), the second lens IV (L402), and the second lens V (L502) are biconcave lenses. The second lens III (L302), the first lens V (L501), and the third lens V (L503) are biconvex lenses.Additionally, the first lens II (L201), the second lens IV (L402), and the sixth lens V (L506) are aspherical lenses, and each of the aspherical lenses includes at least one aspherical surface.

[0044] As can be seen here, the sum of the number of lenses in the first lens group (G1), second lens group (G2), third lens group (G3), fourth lens group (G4), and fifth lens group (G5) of the photolithography projection objective lens of the present embodiment is 20, and there are only 3 aspherical lenses. Since both the number of lenses and the number of aspherical lenses are relatively small, the design cost of the photolithography projection objective lens is relatively low. In addition, the eighth lens V (L508) is used to prevent contamination of the objective lens due to photoresist volatilization. In some embodiments, the eighth lens V (L508) may be omitted, so the sum of the number of lenses in the first lens group (G1), second lens group (G2), third lens group (G3), fourth lens group (G4), and fifth lens group (G5) of the photolithography projection objective lens is 19. Accordingly, the number of lenses of the photolithography projection objective lens is further reduced. It should be noted that in order to reduce the number of lenses of the photolithography projection objective lens, the sum of the number of lenses in the first lens group (G1), second lens group (G2), third lens group (G3), fourth lens group (G4) and fifth lens group (G5) is preferably 25 or less.

[0045] The number of the above-mentioned aspherical lenses is not limited to three, but may be four, five, or six, etc. The number of the above-mentioned aspherical lenses is preferably six or fewer, but is not limited thereto. However, it should be noted that if the number of the above-mentioned aspherical lenses increases, the cost and manufacturing difficulty of the above-mentioned photolithography projection objective lens increase accordingly. The above-mentioned aspherical lenses may be installed in other locations, and this embodiment does not limit this. Preferably, the above-mentioned aspherical lens may be the lens with the smallest light-through aperture among the lens group in which it is located. For example, the above-mentioned first lens II (L201) may be the lens with the smallest light-through aperture among the above-mentioned second lens group (G2). The above-mentioned second lens IV (L402) may be the lens with the smallest light-through aperture among the above-mentioned fourth lens group (G4). The above-mentioned sixth lens V (L506) may be the lens with the smallest light-through aperture among the above-mentioned fifth lens group (G5). In this way, the manufacturing difficulty of the above-mentioned aspherical lens is reduced. Of course, the larger the light-through aperture, the higher the manufacturing difficulty of the above-mentioned aspherical lens. Therefore, the above-mentioned aspherical lens does not necessarily have to be the lens with the smallest light-through aperture among the lens group to which it is located. It is sufficient for the above-mentioned aspherical lens to be the lens with a relatively small light-through aperture among the lens group to which it is located.

[0046] Note that the quantity and type of lenses of the first lens group (G1), second lens group (G2), third lens group (G3), fourth lens group (G4), and fifth lens group (G5) are not limited. They only need to be able to satisfy the respective focal power range.

[0047] Optionally, the photolithography projection objective lens further includes an aperture (STOP0). The aperture (STOP0) is located between the fourth lens group (G4) and the fifth lens group (G5), that is, between the fifth lens IV (L405) and the first lens V (L501). By adjusting the dimensions of the aperture (STOP0), the effective light-through aperture of the photolithography projection objective lens is adjusted. That is, by adjusting the aperture (STOP0), the numerical aperture of the photolithography projection objective lens can be adjusted to suit different application scenarios. The photolithography projection objective lens further includes the aperture (STOP0). Thus, by adjusting the aperture (STOP0), the numerical aperture of the photolithography projection objective lens can be implemented to be continuously adjusted in the range of 0.45 to 0.6.

[0048] Table 1 shows the specific design values ​​of the photolithography projection objective lens of FIG. 1. The specific numerical values ​​can be adjusted according to product demand and do not limit this embodiment. In Table 1, a single lens generally includes two surfaces, each surface being a single refractive surface. The serial numbers in Table 1 are numbered according to the surface of each lens. Here, "OBJ0" in the serial number column represents the object surface, and "STOP0" in the serial number column represents the aperture. "IMA0" in the serial number column represents the image surface. A positive radius value indicates the side where the center of curvature is close to the image surface (IMA0) from the surface. A negative radius value indicates the side where the center of curvature is close to the object surface (OBJ0) from the surface. "1E+18" in the "Radius" column is a relatively large value and indicates that the corresponding surface is flat. The value in the "Thickness" column indicates the axial distance from the current surface to the next surface. A blank space in the "Material" column represents air. In the "Material" column, any material other than a blank space indicates the type of material used for the lens. For example, "SILICA" in the "Material" column indicates fused quartz. The "Full Aperture" column refers to the maximum through-hole of the lens surface.

[0049] (All units of measurement are millimeters) lens Serial number category Radius R Thickness d ingredient Complete viewing OBJ0 55 175.9 L101 1 spherical surface 222.71 31.15 N5859_NIKON 188.7 2 spherical surface 1.00E+18 1.50 186.5 L102 3 spherical surface 306.00 24.67 N5859_NIKON 182.2 4 spherical surface 1.00E+18 6.00 177.3 L201 5 spherical surface 186.00 37.00 SFSL5Y_OHARA 161.8 6 Aspherical 110.77 32.53 132.8 L202 7 spherical surface -319.79 8.00 N5742_NIKON 127.7 8 spherical surface 118.17 39.67 122.3 L203 9 spherical surface -113.39 8.00 PBL6Y_OHARA 125.6 10 spherical surface 862.34 45.85 143.7 L301 11 spherical surface -582.46 33.57 N5859_NIKON 190.4 12 spherical surface -176.17 1.50 200.9 L302 13 spherical surface 908.37 46.08 SFSL5Y_OHARA 224.2 14 spherical surface -232.80 1.50 228.0 L303 15 spherical surface 188.31 42.37 N5742_NIKON 22.2 16 spherical surface 1359.70 118.66 218.8 L401 17 spherical surface -324.19 8.00 N5742_NIKON 133.1 18 spherical surface 156.03 36.69 125.5 L402 19 spherical surface -109.10 8.00 N5742_NIKON 125.6 20 Aspherical 338.31 31.01 141.2 L403 21 spherical surface -744.90 30.20 SFSL5Y_OHARA 166.9 22 spherical surface -193.83 1.50 179.9 L404 23 spherical surface 935.62 25.33 SFSL5Y_OHARA 194.5 24 spherical surface -270.52 1.50 202.0 L405 25 spherical surface 1.00E+18 45.11 SFSL5Y_OHARA 212.8 26 spherical surface -192.47 5.88 217.8 iris STOP0 spherical surface 1.00E+18 1.50 207.8 L501 28 spherical surface 328.89 53.21 N4786_NIKON 218.4 29 spherical surface -272.28 6.24 217.3 L502 30 spherical surface -261.09 15.00 N5742_NIKON 213.9 31 spherical surface 260.21 9.45 214.5 L503 32 spherical surface 317.20 55.00 N4786_NIKON 218.1 33 spherical surface -265.95 6.62 220.3 L504 34 spherical surface 183.62 40.53 SFSL5Y_OHARA 207.8 35 spherical surface 351.24 54.95 194.7 L505 36 spherical surface 129.78 45.00 N5859_NIKON 158.0 37 spherical surface 120.78 1.50 26.5 L506 38 spherical surface 86.76 42.52 SILICA 121.5 39 Aspherical 800.00 15.70 98.4 L507 40 spherical surface 1.00E+18 5.00 SILICA 77.4 41 spherical surface 1.00E+18 21.50 64.9 IMA0 spherical surface 1.00E+18 0.00 32.4

[0050] Based on this, in this embodiment, the focusing power of the first lens group (G1) 1 is 1 / 215.0mm -1 and, the focusing power of the second lens group (G2) 2 is -1 / 61.9mm -1 It is. The focusing power of the third lens group (G3). 3 is 1 / 129.2mm -1 and, the focusing power of the 4th lens group (G4) 4 is -1 / 970.5mm -1 It is. The focusing power of the 5th lens group (G5). 5 is 1 / 162.4mm -1...and satisfies the above requirements. Additionally, the first lens group (G1) can satisfy the requirements matching an image-side field of view diameter of up to 32.4 mm and an image-side numerical aperture of up to 0.6. The second lens group (G2) forms the "waist" of the photolithography projection objective lens and is used to correct curvature and distortion of the image plane. The third lens group (G3) exhibits relatively excellent compensation for secondary image plane curvature and astigmatism. The fourth lens group (G4) includes at least two lenses with an Abbe number of 70 or higher. By coupling the light paths of each field of view and each wavelength to the aperture (STOP0) through the high Abbe number lenses, relatively small vignetting is achieved. This is used to correct chromatic aberration and numerical aperture uniformity. The fifth lens group (G5) includes at least two lenses with an Abbe number of 70 or higher and at least one lens with an Abbe number of less than 50. By matching a high Abbe number lens with a low Abbe number lens, relatively excellent chromatic aberration correction is achieved.

[0051] Figure 2 is a distribution of the telecentricity of the photolithography projection objective lens in Figure 1. The horizontal coordinate in Figure 2 is the height of the object-side field of view, and the vertical coordinate is the size of the telecentricity of each field of view. In the figure, the two curves represent the image-side telecentricity and the object-side telecentricity of the photolithography projection objective lens, respectively. Referring to Figure 2, the maximum value of the object-side telecentricity within the entire field of view does not exceed 6 mrad, and the maximum value of the image-side telecentricity does not exceed 3 mrad. Therefore, it can be seen that the telecentricity of the photolithography projection objective lens has already been well corrected.

[0052] FIG. 3a is a meridional aberration distribution in the pupil when the height of the viewing point on the opposite object side is 1 under i-line illumination of the photolithography projection objective lens in FIG. 1. FIG. 3b is a sagittal aberration distribution in the pupil when the height of the viewing point on the opposite object side is 1 under i-line illumination of the photolithography projection objective lens in FIG. 1. FIG. 4a is a meridional aberration distribution in the pupil when the height of the viewing point on the opposite object side is 0.74 under i-line illumination of the photolithography projection objective lens in FIG. 1. FIG. 4b is a sagittal aberration distribution in the pupil when the height of the viewing point on the opposite object side is 0.74 under i-line illumination of the photolithography projection objective lens in FIG. 1. FIG. 5a is a meridional aberration distribution in the pupil when the height of the viewing point on the opposite object side is 0.49 under i-line illumination of the photolithography projection objective lens in FIG. 1. FIG. 5b is a sagittal aberration distribution in the pupil when the height of the viewing point on the opposite object side is 0.49 under i-line illumination of the photolithography projection objective lens in FIG. 1. FIG. 6a is a meridional aberration distribution in the pupil when the height of the viewing point on the opposite object side is 0.25 under i-line illumination of the photolithography projection objective lens in FIG. 1. FIG. 6b is a sagittal aberration distribution in the pupil when the height of the viewing point on the opposite object side is 0.25 under i-line illumination of the photolithography projection objective lens in FIG. 1. Referring to FIG. 3a through 6b, the horizontal coordinate represents the height on the pupil, and the center point represents the center of the pupil. The vertical coordinate represents the magnitude of the aberration, and the different curves of each image represent the aberration curves at each wavelength. Referring to Figures 3a through 6b, the maximum aberration at each viewing point is less than 0.000286 mm. This means that the wavefront aberrations of the photolithography projection objective lens are all very well corrected, and the chromatic aberrations between each wavelength are all very well corrected.

[0053] Figure 7a is a curvature distribution diagram of the image plane of the photolithography projection objective lens in Figure 1. In Figure 7a, the vertical coordinate represents the image-side field of view, and the horizontal coordinate represents the defocusing distance of each point. Referring to Figure 7a, the curvature of the image plane is very well corrected.

[0054] Figure 7b is a distortion distribution diagram of the image plane of the photolithography projection objective lens in Figure 1. In Figure 7b, the vertical coordinate represents the image-side field of view, and the horizontal coordinate represents the distortion value of each point. Referring to Figure 7b, the distortion is very well corrected.

[0055] Based on this, the present embodiment further provides a photolithography machine. FIG. 8 is a structural diagram of a photolithography machine according to the present embodiment. As shown in FIG. 8, the photolithography machine includes a light source module (10), a light homogenization module (20), a relay module (30), a mask module (40), and a photolithography projection objective lens (50) installed along an optical axis. The light source module (10) may be a high-pressure mercury lamp and is used to emit an illumination beam (i-line light). The illumination beam passes through the light homogenization module (20) and the relay module (30) in sequence to project an illumination beam with a uniform field of view onto the mask module (40). Additionally, it passes through the photolithography projection objective lens (50) again to image onto a substrate (60) to implement exposure imaging.

[0056] Example 2

[0057] FIG. 9 is a structural diagram of a photolithography projection objective lens according to the present embodiment. As shown in FIG. 9, the first lens group (G1) includes a first lens I (L111) arranged sequentially along the optical axis. The second lens group (G2) includes a first lens II (L211), a second lens II (L212), and a third lens II (L213) arranged sequentially along the optical axis. The third lens group (G3) includes a first lens III (L311), a second lens III (L312), and a third lens III (L313) arranged sequentially along the optical axis. The fourth lens group (G4) includes a first lens IV (L411), a second lens IV (L412), a third lens IV (L413), a fourth lens IV (L414), and a fifth lens IV (L415) arranged sequentially along the optical axis. The fifth lens group (G5) comprises a first lens V (L511), a second lens V (L512), a third lens V (L513), a fourth lens V (L514), a fifth lens V (L515), a sixth lens V (L516), a seventh lens V (L517), and an eighth lens V (L518) arranged sequentially along the optical axis. Here, the third lens III (L313) is a plano-convex lens, and the first lens II (L211), the fifth lens V (L515), the sixth lens V (L516), and the seventh lens V (L517) are convex-concave meniscus lenses. The third lens II (L213), the first lens III (L311), and the third lens IV (L413) are concave-convex meniscus lenses. The second lens II (L212), the first lens IV (L411), the second lens IV (L412), and the second lens V (L512) are double-sided concave lenses.The first lens I (L111), the second lens III (L312), the fourth lens IV (L414), the fifth lens IV (L415), the first lens V (L511), the third lens V (L513), and the fourth lens V (L514) are biconvex lenses. Additionally, the first lens II (L211), the second lens IV (L412), and the second lens V (L512) are aspherical lenses, and each of the aspherical lenses includes at least one aspherical surface.

[0058] As can be seen here, the sum of the number of lenses in the first lens group (G1), second lens group (G2), third lens group (G3), fourth lens group (G4), and fifth lens group (G5) of the photolithography projection objective lens of the present embodiment is 20, and there are only 3 aspherical lenses. Since both the number of lenses and the number of aspherical lenses are relatively small, the design cost of the photolithography projection objective lens is relatively low. In addition, the eighth lens V (L518) is used to prevent contamination of the objective lens due to photoresist volatilization. In some embodiments, the eighth lens V (L518) may be omitted, so the sum of the number of lenses in the first lens group (G1), second lens group (G2), third lens group (G3), fourth lens group (G4), and fifth lens group (G5) of the photolithography projection objective lens is 19. Accordingly, the number of lenses of the photolithography projection objective lens is further reduced. It should be noted that in order to reduce the number of lenses of the photolithography projection objective lens, the sum of the number of lenses in the first lens group (G1), the second lens group (G2), the third lens group (G3), the fourth lens group (G4), and the fifth lens group (G5) is preferably 25 or less. The number of aspherical lenses is not limited to 3 and may be 4, 5, or 6, etc. The number of aspherical lenses is preferably 6 or less, but is not limited thereto. However, it should be noted that if the number of aspherical lenses increases, the cost and manufacturing difficulty of the photolithography projection objective lens increase accordingly. The aspherical lenses may be installed in other locations, and this embodiment does not limit this. Preferably, the aspherical lens may be the lens with the smallest light-transmitting aperture among the lens groups in which it is located. For example, the first lens II (L211) may be the lens with the smallest light-transmitting aperture among the second lens group (G2).The second lens IV (L412) may be the lens with the smallest light-through aperture among the fourth lens group (G4). The second lens V (L512) may be the lens with the smallest light-through aperture among the fifth lens group (G5). In this way, the manufacturing difficulty of the aspherical lens is reduced. Of course, the larger the light-through aperture, the higher the manufacturing difficulty of the aspherical lens. Therefore, the aspherical lens does not necessarily have to be the lens with the smallest light-through aperture among the lens group to which it is located. It is sufficient for the aspherical lens to be a lens with a relatively small light-through aperture among the lens group to which it is located.

[0059] Note that the quantity and type of lenses of the first lens group (G1), second lens group (G2), third lens group (G3), fourth lens group (G4), and fifth lens group (G5) are not limited. They only need to be able to satisfy the respective focal power range.

[0060] Optionally, the photolithography projection objective lens further includes an aperture (STOP1). The aperture (STOP1) is located between the fourth lens group (G4) and the fifth lens group (G5), that is, between the fifth lens IV (L415) and the first lens V (L511). By adjusting the dimensions of the aperture (STOP1), the effective light-through aperture of the photolithography projection objective lens is adjusted. That is, by adjusting the aperture (STOP1), the numerical aperture of the photolithography projection objective lens can be adjusted to suit different application scenarios. The photolithography projection objective lens further includes the aperture (STOP1). Thus, by adjusting the aperture (STOP1), the numerical aperture of the photolithography projection objective lens can be implemented to be continuously adjustable in the range of 0.45 to 0.6.

[0061] Table 2 shows the specific design values ​​of the photolithography projection objective lens of FIG. 9. The specific numerical values ​​can be adjusted according to product demand and do not limit this embodiment. In Table 2, one lens generally includes two surfaces, each surface being a refractive surface. The serial numbers in Table 2 are numbered according to the surface of each lens. Here, "OBJ1" in the serial number column represents the object surface, and "STOP1" in the serial number column represents the aperture. "IMA1" in the serial number column represents the image surface. A positive radius value indicates the side where the center of curvature is close to the image surface (IMA1) from the surface. A negative radius value indicates the side where the center of curvature is close to the object surface (OBJ1) from the surface. "1E+18" in the "Radius" column is a relatively large value and indicates that the corresponding surface is flat. The value in the "Thickness" column indicates the axial distance from the current surface to the next surface. A blank space in the "Material" column represents air. In the "Material" column, any material other than a blank space indicates the type of material used for the lens. For example, "SILICA" in the "Material" column indicates fused quartz. The "Full Aperture" column refers to the maximum through-hole of the lens surface.

[0062] (All units of measurement are millimeters) Serial number category Radius R Thickness d ingredient Complete sightseeing OBJ1 spherical surface 1.00E+18 55.57 175.9 L111 1 spherical surface 233.78 37.78 N5859_NIKON 188.6 2 spherical surface -525.65 1.50 186.6 L211 3 spherical surface 145.64 4.91 SFSL5Y_OHARA 169.7 4 Aspherical 106.31 34.96 135.3 L212 5 spherical surface -245.96 8.00 N5742_NIKON 131.6 6 spherical surface 129.72 32.59 128.4 L213 7 spherical surface -184.47 8.01 SFSL5Y_OHARA 132.1 8 spherical surface -1500.00 26.91 142.2 L311 9 spherical surface -169.49 49.97 N5742_NIKON 152.8 10 spherical surface -167.18 4.94 188.5 L312 11 spherical surface 49.47 41.36 PBL6Y_OHARA 215.8 12 spherical surface -276.47 1.51 219.4 L313 13 spherical surface 197.82 42.70 N5859_NIKON 219.7 14 spherical surface 1.00E+18 110.41 214.2 L411 15 spherical surface -486.06 8.00 PBL6Y_OHARA 132.0 16 spherical surface 207.11 28.59 124.5 L412 17 spherical surface -131.07 8.03 N5742_NIKON 122.8 18 Aspherical 222.40 28.07 129.5 L413 19 spherical surface -207.04 18.95 N5742_NIKON 137.0 20 spherical surface -803.91 8.21 158.2 L414 21 spherical surface 907.03 42.19 SFSL5Y_OHARA 179.1 22 spherical surface -188.63 1.51 189.5 L415 23 spherical surface 323.34 47.06 N4786_NIKON 210.7 24 spherical surface -286.77 35.87 212.0 STOP1 spherical surface 1.00E+18 1.50 193.0 L511 26 spherical surface 327.05 37.06 N4786_NIKON 200.3 27 spherical surface -439.63 15.73 198.3 L512 28 spherical surface -239.09 14.00 N5742_NIKON 195.5 29 Aspherical 241.97 22.37 200.5 L513 30 spherical surface 379.35 42.98 N4786_NIKON 214.3 31 spherical surface -340.85 4.04 218.5 L514 32 spherical surface 278.58 49.57 SFSL5Y_OHARA 227.3 33 spherical surface -426.41 1.56 225.3 L515 34 spherical surface 173.48 36.94 SFSL5Y_OHARA 201.5 35 spherical surface 321.37 9.00 185.9 L516 36 spherical surface 125.63 39.66 SFSL5Y_OHARA 164.6 37 spherical surface 126.57 34.30 132.9 L517 38 spherical surface 116.04 24.40 SFSL5Y_OHARA 102.5 39 spherical surface 258.44 8.88 84.8 L518 40 spherical surface 1.00E+18 5.00 SILICA 75.8 41 spherical surface 1.00E+18 20.43 70.9 IMA1 spherical surface 1.00E+18 0 32.4

[0063] Based on this, in this embodiment, the focusing power of the first lens group (G1) 1 is 1 / 268.4mm -1 and, the focusing power of the second lens group (G2) 2 is -1 / 98.5mm -1 It is. The focusing power of the third lens group (G3). 3 is 1 / 144.9mm -1 and, the focusing power of the 4th lens group (G4) 4 is -1 / 1021.4mm -1 It is. The focusing power of the 5th lens group (G5). 5 is 1 / 149.739mm-1 ...and satisfies the above requirements. Additionally, the first lens group (G1) can satisfy the requirements matching an image-side field of view diameter of up to 32.4 mm and an image-side numerical aperture of up to 0.6. The second lens group (G2) forms the "waist" of the photolithography projection objective lens and is used to correct curvature and distortion of the image plane. The third lens group (G3) exhibits relatively excellent compensation for secondary image plane curvature and astigmatism. The fourth lens group (G4) includes at least two lenses with an Abbe number of 70 or higher. By coupling the light paths of each field of view and each wavelength to the aperture (STOP1) through the high Abbe number lenses, relatively small vignetting is achieved. This is used to correct chromatic aberration and numerical aperture uniformity. The fifth lens group (G5) includes at least two lenses with an Abbe number of 70 or higher and at least one lens with an Abbe number of less than 50. By matching a high Abbe number lens with a low Abbe number lens, relatively excellent chromatic aberration correction is achieved.

[0064] FIG. 10 is a distribution of the telecentricity of the photolithography projection objective lens in FIG. 9. The horizontal coordinate in FIG. 10 is the height of the object-side field of view, and the vertical coordinate is the size of the telecentricity of each field of view. In the figure, the two curves represent the image-side telecentricity and the object-side telecentricity of the photolithography projection objective lens, respectively. Referring to FIG. 10, the maximum value of the object-side telecentricity within the entire field of view does not exceed 7 mrad, and the maximum value of the image-side telecentricity does not exceed 3 mrad. Therefore, it can be seen that the telecentricity of the photolithography projection objective lens has already been well corrected.

[0065] FIG. 11a is a meridional aberration distribution in the pupil when the height of the viewing point on the opposite object side is 1 under i-line illumination of the photolithography projection objective lens in FIG. 9. FIG. 11b is a sagittal aberration distribution in the pupil when the height of the viewing point on the opposite object side is 1 under i-line illumination of the photolithography projection objective lens in FIG. 9. FIG. 12a is a meridional aberration distribution in the pupil when the height of the viewing point on the opposite object side is 0.74 under i-line illumination of the photolithography projection objective lens in FIG. 9. FIG. 12b is a sagittal aberration distribution in the pupil when the height of the viewing point on the opposite object side is 0.74 under i-line illumination of the photolithography projection objective lens in FIG. 9. FIG. 13a is a meridional aberration distribution in the pupil when the height of the viewing point on the opposite object side is 0.49 under i-line illumination of the photolithography projection objective lens in FIG. 9. FIG. 13b is a sagittal aberration distribution in the pupil when the height of the viewing point on the opposite object side is 0.49 under i-line illumination of the photolithography projection objective lens in FIG. 9. FIG. 14a is a meridional aberration distribution in the pupil when the height of the viewing point on the opposite object side is 0.25 under i-line illumination of the photolithography projection objective lens in FIG. 9. FIG. 14b is a sagittal aberration distribution in the pupil when the height of the viewing point on the opposite object side is 0.25 under i-line illumination of the photolithography projection objective lens in FIG. 9. Referring to FIG. 11a through FIG. 14b, the horizontal coordinate represents the height on the pupil, and the center point represents the center of the pupil. The vertical coordinate represents the magnitude of the aberration, and the different curves of each image represent the aberration curves at each wavelength. Referring to Figures 11a through 14b, the maximum aberration at each viewing point is less than 0.000618 mm. This means that the wavefront aberrations of the photolithography projection objective lens are all very well corrected, and the chromatic aberrations between each wavelength are all very well corrected.

[0066] Figure 15a is a curvature distribution diagram of the image plane of the photolithography projection objective lens in Figure 9. In Figure 15a, the vertical coordinate represents the image-side field of view, and the horizontal coordinate represents the defocusing distance of each point. Referring to Figure 15a, the curvature of the image plane is very well corrected.

[0067] Figure 15b is a distortion distribution of the photolithography projection objective lens in Figure 9. In Figure 15b, the vertical coordinate represents the image-side viewpoint, and the horizontal coordinate represents the distortion value of each point. Referring to Figure 15b, the distortion is very well corrected.

[0068] Example 3

[0069] FIG. 16 is a structural diagram of a photolithography projection objective lens according to the present embodiment. As shown in FIG. 16, the first lens group (G1) includes a first lens I (L121), a second lens I (L122), and a third lens I (L123) arranged sequentially along the optical axis. The second lens group (G2) includes a first lens II (L221), a second lens II (L222), and a third lens II (L223) arranged sequentially along the optical axis. The third lens group (G3) includes a first lens III (L321), a second lens III (L322), and a third lens III (L323) arranged sequentially along the optical axis. The fourth lens group (G4) comprises a first lens IV (L421), a second lens IV (L422), a third lens IV (L423), a fourth lens IV (L424), and a fifth lens IV (L425) arranged sequentially along the optical axis. The fifth lens group (G5) comprises a first lens V (L521), a second lens V (L522), a third lens V (L523), a fourth lens V (L524), a fifth lens V (L525), a sixth lens V (L526), ​​a seventh lens V (L527), and an eighth lens V (L528) arranged sequentially along the optical axis. Here, the third lens III (L323) and the fourth lens IV (L424) are plano-convex lenses. The first lens II (L221), the fourth lens V (L524), the fifth lens V (L525), the sixth lens V (L526), ​​and the seventh lens V (L527) are convex-concave meniscus lenses. The first lens III (L321) and the third lens IV (L423) are concave-convex meniscus lenses. The second lens II (L222), the third lens II (L223), the first lens IV (L421), the second lens IV (L422), and the second lens V (L522) are biconcave lenses.The second lens I (L122), the third lens I (L123), the second lens III (L322), the fifth lens IV (L425), the first lens V (L521), and the third lens V (L523) are biconvex lenses. The first lens I (L121) is a flat lens. Additionally, the first lens II (L221), the second lens IV (L422), and the seventh lens V (L527) are aspherical lenses, and each of the aspherical lenses includes at least one aspherical surface.

[0070] As can be seen here, the sum of the number of lenses in the first lens group (G1), second lens group (G2), third lens group (G3), fourth lens group (G4), and fifth lens group (G5) of the photolithography projection objective lens of the present embodiment is 22, and there are only 3 aspherical lenses. Since both the number of lenses and the number of aspherical lenses are relatively small, the design cost of the photolithography projection objective lens is relatively low. In addition, the eighth lens V (L528) is used to prevent contamination of the objective lens due to photoresist volatilization. Therefore, the first lens I (L121) can prevent contamination of the objective lens due to impurities on the object side, and has stronger anti-contamination properties. In some embodiments, the eighth lens V (L528) and the first lens I (L121) may be omitted. Accordingly, the sum of the number of lenses in the first lens group (G1), second lens group (G2), third lens group (G3), fourth lens group (G4), and fifth lens group (G5) of the above photolithography projection objective lens is 20. This further reduces the number of lenses of the above photolithography projection objective lens. It should be noted that in order to reduce the number of lenses of the above photolithography projection objective lens, the sum of the number of lenses in the first lens group (G1), second lens group (G2), third lens group (G3), fourth lens group (G4), and fifth lens group (G5) is preferably 25 or less.

[0071] The number of the above-mentioned aspherical lenses is not limited to three, but may be four, five, or six, etc. The number of the above-mentioned aspherical lenses is preferably six or fewer, but is not limited thereto. However, it should be noted that if the number of the above-mentioned aspherical lenses increases, the cost and manufacturing difficulty of the above-mentioned photolithography projection objective lens increase accordingly. The above-mentioned aspherical lenses may be installed in other locations, and this embodiment does not limit this. Preferably, the above-mentioned aspherical lens may be the lens with the smallest light-through aperture among the lens group in which it is located. For example, the first lens II (L221) may be the lens with the smallest light-through aperture among the second lens group (G2). The second lens IV (L422) may be the lens with the smallest light-through aperture among the fourth lens group (G4). The seventh lens V (L527) may be the lens with the smallest light-through aperture among the fifth lens group (G5). In this way, the manufacturing difficulty of the above-mentioned aspherical lens is reduced. Of course, the larger the light-through aperture, the higher the manufacturing difficulty of the above-mentioned aspherical lens. Therefore, the above-mentioned aspherical lens does not necessarily have to be the lens with the smallest light-through aperture among the lens group to which it is located. It is sufficient for the above-mentioned aspherical lens to be the lens with a relatively small light-through aperture among the lens group to which it is located.

[0072] Note that the quantity and type of lenses of the first lens group (G1), second lens group (G2), third lens group (G3), fourth lens group (G4), and fifth lens group (G5) are not limited. They only need to be able to satisfy the respective focal power range.

[0073] Optionally, the photolithography projection objective lens further includes an aperture (STOP2). The aperture (STOP2) is located between the fourth lens group (G4) and the fifth lens group (G5), that is, between the fifth lens IV (L425) and the first lens V (L521). By adjusting the dimensions of the aperture (STOP2), the effective light-through aperture of the photolithography projection objective lens is adjusted. That is, by adjusting the aperture (STOP2), the numerical aperture of the photolithography projection objective lens can be adjusted to suit different application scenarios. The photolithography projection objective lens further includes the aperture (STOP2). Thus, by adjusting the aperture (STOP2), the numerical aperture of the photolithography projection objective lens can be implemented to be continuously adjusted in the range of 0.45 to 0.6.

[0074] Table 3 shows the specific design values ​​of the photolithography projection objective lens of FIG. 16. The specific numerical values ​​can be adjusted according to product demand and do not limit this embodiment. In Table 3, one lens generally includes two surfaces, each surface being a refractive surface. The serial numbers in Table 3 are numbered according to the surface of each lens. Here, "OBJ2" in the serial number column represents the object surface, and "STOP2" in the serial number column represents the aperture. "IMA2" in the serial number column represents the image surface. A positive radius value indicates the side where the center of curvature is close to the image surface (IMA2) from the surface. A negative radius value indicates the side where the center of curvature is close to the object surface (OBJ2) from the surface. "1E+18" in the "Radius" column is a relatively large value and indicates that the corresponding surface is flat. The value in the "Thickness" column indicates the axial distance from the current surface to the next surface. A blank space in the "Material" column represents air. In the "Material" column, any material other than a blank space indicates the type of material used for the lens. For example, "SILICA" in the "Material" column indicates fused quartz. The "Full Aperture" column refers to the maximum through-hole of the lens surface.

[0075] (All units of measurement are millimeters) Serial number category Radius R Thickness d ingredient Complete sightseeing OBJ2 spherical surface 1.00E+18 55.39 175.9 L121 1 spherical surface 1.00E+18 8.00 SILICA 186.4 2 spherical surface 1.00E+18 6.39 187.8 L122 3 spherical surface 328.35 27.54 N5742_NIKON 192.6 4 spherical surface -1569.07 1.50 191.8 L123 5 spherical surface 251.31 32.93 N5165_NIKON 187.9 6 spherical surface -809.16 5.83 183.4 L221 7 spherical surface 233.52 40.88 NIFSS_NIKON 165.3 8 Aspherical 117.69 29.12 133.2 L222 9 spherical surface -285.32 8.00 N5742_NIKON 129.2 10 spherical surface 112.19 40.80 123.1 L223 11 spherical surface -100.59 8.06 PBL6Y_OHARA 125.7 12 spherical surface 1837.85 23.18 147.7 L321 13 spherical surface -330.78 31.80 N5165_NIKON 165.5 14 spherical surface -139.17 1.68 178.5 L322 15 spherical surface 1167.99 48.93 SFSL5Y_OHARA 207.9 16 spherical surface -180.87 1.50 213.7 L323 17 spherical surface 210.42 40.48 N5742_NIKON 215.9 18 spherical surface 1.00E+18 120.67 210.8 L421 19 spherical surface -992.83 8.00 N5742_NIKON 132.6 20 spherical surface 182.24 30.33 125.8 L422 21 spherical surface -126.08 8.34 N5742_NIKON 124.9 22 Aspherical 265.97 33.58 134.5 L423 23 spherical surface -183.53 34.03 N5742_NIKON 146.2 24 spherical surface -196.11 1.50 174.0 L424 25 spherical surface 1.00E+18 37.65 SFSL5Y_OHARA 193.3 26 spherical surface -260.23 1.50 204.5 L425 27 spherical surface 2230.30 40.89 N4786_NIKON 216.2 28 spherical surface -224.40 1.50 219.8 STOP2 spherical surface 1.00E+18 9.18 210.7 L521 30 spherical surface 333.55 48.20 N4786_NIKON 223.9 31 spherical surface -321.40 6.10 223.2 L522 32 spherical surface -320.79 15.00 N5742_NIKON 220.1 33 spherical surface 241.86 11.74 219.9 L523 34 spherical surface 284.76 50.66 N4786_NIKON 225.9 35 spherical surface -353.17 1.50 227.4 L524 36 spherical surface 183.82 35.61 SFSL5Y_OHARA 221.0 37 spherical surface 540.11 1.52 214.8 L525 38 spherical surface 157.38 33.25 PBL6Y_OHARA 200.2 39 spherical surface 111.69 12.25 168.8 L526 40 spherical surface 126.93 33.84 SFSL5Y_OHARA 166.5 41 spherical surface 164.06 18.72 149.8 L527 42 spherical surface 92.13 39.36 SFSL5Y_OHARA 132.3 43 Aspherical 666.48 16.02 114.2 L528 44 spherical surface 1.00E+18 5.00 SILICA 94.5 45 spherical surface 1.00E+18 32.04 90.0 IMA2 spherical surface 1.00E+18 0.00 32.5

[0076] Based on this, in this embodiment, the focusing power of the first lens group (G1) 1 is 1 / 206.1mm -1 and, the focusing power of the second lens group (G2) 2 is -1 / 56.5mm -1 It is. The focusing power of the third lens group (G3). 3 is 1 / 122.7mm -1 and, the focusing power of the 4th lens group (G4) 4 is -1 / 870mm -1 It is. The focusing power of the 5th lens group (G5). 5 is 1 / 163.2mm -1...and satisfies the above requirements. Additionally, the first lens group (G1) can satisfy the requirements matching an image-side field of view diameter of up to 32.4 mm and an image-side numerical aperture of up to 0.6. The second lens group (G2) forms the "waist" of the photolithography projection objective lens and is used to correct curvature and distortion of the image plane. The third lens group (G3) exhibits relatively excellent compensation for secondary image plane curvature and astigmatism. The fourth lens group (G4) includes at least two lenses with an Abbe number of 70 or higher. By coupling the light paths of each field of view and each wavelength to the aperture (STOP2) through the high Abbe number lenses, relatively small vignetting is achieved. This is used to correct chromatic aberration and numerical aperture uniformity. The fifth lens group (G5) includes at least two lenses with an Abbe number of 70 or higher and at least one lens with an Abbe number of less than 50. By matching a high Abbe number lens with a low Abbe number lens, relatively excellent chromatic aberration correction is achieved.

[0077] FIG. 17 is a distribution of the telecentricity of the photolithography projection objective lens in FIG. 16. The horizontal coordinate in FIG. 17 is the height of the object-side field of view, and the vertical coordinate is the size of the telecentricity of each field of view. In the figure, the two curves represent the image-side telecentricity and the object-side telecentricity of the photolithography projection objective lens, respectively. Referring to FIG. 17, the maximum value of the object-side telecentricity within the entire field of view does not exceed 8 mrad, and the maximum value of the image-side telecentricity does not exceed 4 mrad. Therefore, it can be seen that the telecentricity of the photolithography projection objective lens has already been well corrected.

[0078] FIG. 18a is a meridional aberration distribution in the pupil when the height of the viewing point on the opposite object side is 1 under i-line illumination of the photolithography projection objective lens in FIG. 16. FIG. 18b is a sagittal aberration distribution in the pupil when the height of the viewing point on the opposite object side is 1 under i-line illumination of the photolithography projection objective lens in FIG. 16. FIG. 19a is a meridional aberration distribution in the pupil when the height of the viewing point on the opposite object side is 0.74 under i-line illumination of the photolithography projection objective lens in FIG. 16. FIG. 19b is a sagittal aberration distribution in the pupil when the height of the viewing point on the opposite object side is 0.74 under i-line illumination of the photolithography projection objective lens in FIG. 16. FIG. 20a is a meridional aberration distribution in the pupil when the height of the viewing point on the opposite object side is 0.49 under i-line illumination of the photolithography projection objective lens in FIG. 16. FIG. 20b is a sagittal aberration distribution in the pupil when the height of the viewing point on the opposite object side is 0.49 under i-line illumination of the photolithography projection objective lens in FIG. 16. FIG. 21a is a meridional aberration distribution in the pupil when the height of the viewing point on the opposite object side is 0.25 under i-line illumination of the photolithography projection objective lens in FIG. 16. FIG. 21b is a sagittal aberration distribution in the pupil when the height of the viewing point on the opposite object side is 0.25 under i-line illumination of the photolithography projection objective lens in FIG. 16. Referring to FIG. 18a through FIG. 21b, the horizontal coordinate represents the height on the pupil, and the center point represents the center of the pupil. The vertical coordinate represents the magnitude of the aberration, and the different curves of each image represent the aberration curves at each wavelength. Referring to Figures 18a through 21b, the maximum aberration at each viewing point is less than 0.0005 mm. This means that the wavefront aberrations of the photolithography projection objective lens are all very well corrected, and the chromatic aberrations between each wavelength are all very well corrected.

[0079] FIG. 22a is a curvature distribution diagram of the image plane of the photolithography projection objective lens in FIG. 16. In FIG. 22a, the vertical coordinate represents the image-side field of view, and the horizontal coordinate represents the defocusing distance of each point. Referring to FIG. 22a, the curvature of the image plane is very well corrected.

[0080] FIG. 22b is a distortion distribution diagram of the image plane of the photolithography projection objective lens in FIG. 16. In FIG. 22b, the vertical coordinate is the image-side field of view, and the horizontal coordinate represents the distortion value of each point. Referring to FIG. 22b, the distortion is very well corrected.

[0081] In the above embodiment, the focusing power of the first lens group 1, Focusing power of the second lens group 2. Focusing power of the 3rd lens group 3, 4th lens group focusing power Focusing power of the 4th and 5th lens groups Note that the range of 5 is for illustrative purposes only. In another embodiment, the focusing power of the first lens group 1 is 1 / 350mm -1 < 1<1 / 150mm -1 (e.g., 1 / 320mm -1 , 1 / 300mm -1 , 1 / 280mm -1 , 1 / 250mm -1 , 1 / 220mm -1 , 1 / 190mm -1 , 1 / 160mm -1 Satisfies (etc.). Focusing power of the second lens group. 2 is -1 / 30mm -1 < 2<-1 / 150mm -1 (e.g. -1 / 50mm) -1 , -1 / 70mm -1 , -1 / 90mm -1 , -1 / 110mm -1 , -1 / 130mm -1 Satisfies (etc.). Focusing power of the third lens group above. 3 is 1 / 200mm -1 < 3<1 / 80mm -1 (e.g., 1 / 180mm -1 , 1 / 150mm -1 , 1 / 120mm -1 , 1 / 100mm -1 , 1 / 90 mm -1 Satisfies (etc.). Focusing power of the fourth lens group. 4 is -1 / 500mm -1 < 4<-1 / 1500mm -1 (e.g. -1 / 600mm) -1 , -1 / 700mm -1 , -1 / 900mm -1 , -1 / 1200mm -1 , -1 / 1400mm -1 Satisfies (etc.). Focusing power of the above-mentioned fifth lens group 5 is 1 / 200mm -1 < 5<1 / 80mm -1 (e.g., 1 / 180mm -1 , 1 / 150mm -1 , 1 / 120mm -1 , 1 / 100mm -1 , 1 / 90mm -1 It satisfies the conditions (etc.). Through this, the technical effect of reducing the number of lenses and aspherical lenses can be realized. This will not be explained by listing them one by one.

[0082] In summary, the photolithography projection objective lens provided in an embodiment of the present invention includes a first lens group, a second lens group, a third lens group, a fourth lens group, and a fifth lens group arranged sequentially along an optical axis. The focusing power of the first lens group 1, Focusing power of the second lens group 2. Focusing power of the 3rd lens group 3, 4th lens group focusing power Focusing power of the 4th and 5th lens groups 5 is 1 / 350mm -1< 1<1 / 150mm -1 , -1 / 30mm -1 < 2<-1 / 150mm -1 , 1 / 200mm -1 < 3<1 / 80mm -1 , -1 / 500mm -1 < 4<-1 / 1500mm -1 , 1 / 200mm -1 < 5<1 / 80mm -1 It satisfies [the requirements]. Based on the satisfaction of high exposure resolution, the number of lenses and aspherical lenses can be reduced, the design cost and manufacturing cycle of the photolithography projection objective lens can be reduced, and the product's market competitiveness can be improved. At the same time, through a combination of focusing power between positive and negative phases, the image quality correction capability of the photolithography projection objective lens is improved, thereby enhancing exposure imaging quality and realizing a smaller exposure resolution and CDU. Accordingly, the present invention further provides a photolithography machine.

[0083] It should be noted that each embodiment of this specification has been described in a progressive manner. Each embodiment has been described with an emphasis on its differences from other embodiments, and identical and similar parts between embodiments may be referenced to one another. In the case of the system disclosed in the embodiment, the description is relatively simple as it corresponds to the method disclosed in the embodiment. For relevant details, refer to the description in the method section.

[0084] Furthermore, it should be noted that although the present invention has been disclosed above using preferred embodiments, such embodiments are not intended to limit the present invention. A person skilled in the art can, without departing from the scope of the technical solution of the present invention, make various changes and modifications to the technical solution of the present invention using the technical content disclosed above, or modify it into equivalent embodiments that are equivalently varied. Therefore, all simple modifications, equivalent changes, and variations made to the above embodiments based on the technical essence of the present invention, without departing from the content of the technical solution of the present invention, fall within the scope of protection of the technical solution of the present invention.

[0085] Furthermore, unless otherwise explained or stated, terms such as "first," "second," "third," etc., as used in the specification should be understood as being used solely for the purpose of distinguishing each component, element, step, etc. within the specification. It should be noted that these terms are not used to indicate logical or sequential relationships between each component, element, or step.

[0086] Furthermore, it should be understood that the terms described herein are used merely to describe specific embodiments and are not intended to limit the scope of the invention. It should be noted that the singular forms “one” and “one type” used in this application and the appended claims include the plural form unless the context clearly indicates otherwise. For example, references to “one step” or “one device” mean references to one or more steps or devices. Additionally, secondary steps and secondary devices may be included. All conjunctions used should be understood in their broadest sense. Also, it should be noted that the word “or” has the definition of a logical “or” and not the definition of a logical “exclusive disjunction” unless the context clearly indicates otherwise. Furthermore, in embodiments of the invention, the implementation of the method and / or device may include performing selected operations manually, automatically, or in combination. Explanation of the symbols

[0087] G1-1st lens group; G2-2nd lens group; G3-3rd lens group; G4-4th lens group; G5-5th lens group; OBJ0, OBJ1, OBJ2-Object plane; IMA0, IMA1, IMA2-Image plane; STOP0, STOP1, STOP2-Aperture; 10-Light source module; 20-Optical homogenization module; 30-Relay module; 40-Mask module; 50-Photolithography projection objective lens; 60-Substrate; L101, L111, L121 - First Lens I; L102, L122 - Second Lens I; L123 - Third Lens I; L201, L211, L221 - First Lens II; L202, L212, L222 - Second Lens II; L203, L213, L223 - Third Lens II; L301, L311, L321 - First Lens III; L302, L312, L322 - Second Lens III; L303, L313, L323 - Third Lens III; L401, L411, L421 - First Lens IV; L402, L412, L422 - Second Lens IV; L403, L413, L423 - Third Lens IV; L404, L414, L424 - Fourth Lens IV; L405, L415, L425 - 5th Lens IV; L501, L511, L521 - 1st Lens V; L502, L512, L522 - 2nd Lens V; L503, L513, L523 - 3rd Lens V; L504, L514, L524 - 4th Lens V; L505, L515, L525 - 5th Lens V; L506, L516, L526 - 6th Lens V; L517, L527 - 7th Lens V; L508, L518, L528 - 8th Lens V.

Claims

Claim 1 A photolithography projection objective lens comprises a first lens group, a second lens group, a third lens group, a fourth lens group, and a fifth lens group arranged sequentially along an optical axis, and the focusing power of the first lens group 1, focusing power of the second lens group 2, the focusing power of the third lens group above 3, the focusing power of the fourth lens group 4 and the focusing power of the 5th lens group 5 is 1 / 350mm -1 < 1<1 / 150mm -1 -1 / 30mm -1 < 2<-1 / 150mm -1 ;1 / 200mm -1 < 3<1 / 80mm -1 -1 / 500mm -1 < 4<-1 / 1500mm -1 ; and 1 / 200mm -1 < 5<1 / 80mm -1 A photolithography projection objective lens characterized by satisfying the relationship. Claim 2 A photolithography projection objective lens according to claim 1, characterized in that the sum of the number of lenses in the entire lens group, including the first lens group, the second lens group, the third lens group, the fourth lens group, and the fifth lens group, is 19 or more and 25 or less. Claim 3 A photolithography projection objective lens according to claim 1, characterized in that the sum of the number of aspherical lenses in the entire lens group including the first lens group, the second lens group, the third lens group, the fourth lens group, and the fifth lens group is 3 or more and 6 or less, and each of the aspherical lenses includes at least one aspherical surface. Claim 4 A photolithography projection objective lens according to paragraph 3, characterized in that the aspherical lens is the lens with the smallest light-through aperture in the group of lenses to which it is located. Claim 5 In claim 1, the first lens group comprises a first lens I and a second lens I arranged sequentially along an optical axis, the second lens group comprises a first lens II, a second lens II, and a third lens II arranged sequentially along an optical axis, the third lens group comprises a first lens III, a second lens III, and a third lens III arranged sequentially along an optical axis, the fourth lens group comprises a first lens IV, a second lens IV, a third lens IV, a fourth lens IV, and a fifth lens IV arranged sequentially along an optical axis, and the fifth lens group comprises a first lens V, a second lens V, a third lens V, a fourth lens V, a fifth lens V, and a sixth lens V arranged sequentially along an optical axis, wherein the first lens I, the second lens I, and the fifth lens IV are plano-convex lenses, and the first lens II, the third lens III, the fourth lens V, the fifth lens V, and the sixth lens V are convex-concave meniscus lenses, and A photolithography projection objective lens characterized in that the first lens III, the third lens IV, and the fourth lens IV are concave-convex meniscus lenses, the second lens II, the third lens II, the first lens IV, the second lens IV, and the second lens V are double-sided concave lenses, and the second lens III, the first lens V, and the third lens V are double-sided convex lenses. Claim 6 A photolithography projection objective lens according to claim 5, characterized in that at least the first lens II, the second lens IV, and the sixth lens V are aspherical lenses. Claim 7 In claim 1, the first lens group comprises a first lens I arranged sequentially along an optical axis, the second lens group comprises a first lens II, a second lens II, and a third lens II arranged sequentially along an optical axis, the third lens group comprises a first lens III, a second lens III, and a third lens III arranged sequentially along an optical axis, the fourth lens group comprises a first lens IV, a second lens IV, a third lens IV, a fourth lens IV, and a fifth lens IV arranged sequentially along an optical axis, the fifth lens group comprises a first lens V, a second lens V, a third lens V, a fourth lens V, a fifth lens V, a sixth lens V, and a seventh lens V arranged sequentially along an optical axis, wherein the third lens III is a plano-convex lens, the first lens II, the fifth lens V, the sixth lens V, and the seventh lens V are convex-concave meniscus lenses, and the third lens II, the first lens III, and the third lens IV A photolithography projection objective lens characterized by being a concave-convex meniscus lens, wherein the second lens II, the first lens IV, the second lens IV, and the second lens V are double-sided concave lenses, and the first lens I, the second lens III, the fourth lens IV, the fifth lens IV, the first lens V, the third lens V, and the fourth lens V are double-sided convex lenses. Claim 8 A photolithography projection objective lens according to claim 7, characterized in that at least the first lens II, the second lens IV, and the second lens V are aspherical lenses. Claim 9 In claim 1, the first lens group comprises a first lens I, a second lens I, and a third lens I arranged sequentially along an optical axis; the second lens group comprises a first lens II, a second lens II, and a third lens II arranged sequentially along an optical axis; the third lens group comprises a first lens III, a second lens III, and a third lens III arranged sequentially along an optical axis; the fourth lens group comprises a first lens IV, a second lens IV, a third lens IV, a fourth lens IV, and a fifth lens IV arranged sequentially along an optical axis; the fifth lens group comprises a first lens V, a second lens V, a third lens V, a fourth lens V, a fifth lens V, a sixth lens V, and a seventh lens V arranged sequentially along an optical axis; the third lens III and the fourth lens IV are plano-convex lenses; and the first lens II, the fourth lens V, the fifth lens V, the sixth lens V, and the seventh lens V are convex-concave meniscuses. A photolithography projection objective lens characterized by being a lens, wherein the first lens III and the third lens IV are concave-convex meniscus lenses, the second lens II, the third lens II, the first lens IV, the second lens IV, and the second lens V are double concave lenses, the second lens I, the third lens I, the second lens III, the fifth lens IV, the first lens V, and the third lens V are double convex lenses, and the first lens I is a flat lens. Claim 10 A photolithography projection objective lens according to claim 9, characterized in that at least the first lens II, the second lens IV, and the seventh lens V are aspherical lenses. Claim 11 A photolithography projection objective lens according to claim 5, wherein the fifth lens group further comprises an eighth lens V, the eighth lens V is the lens closest to the image plane of the fifth lens group, and the eighth lens V is a flat lens. Claim 12 A photolithography projection objective lens according to claim 1, further comprising an aperture located between the fourth lens group and the fifth lens group. Claim 13 A photolithography projection objective lens according to claim 1, characterized in that the fourth lens group comprises at least two lenses having an Abbe number of 70 or more. Claim 14 A photolithography projection objective lens according to claim 1, characterized in that the fifth lens group comprises at least two lenses having an Abbe number of 70 or more and at least one lens having an Abbe number of less than 50. Claim 15 A photolithography projection objective lens according to claim 1, characterized in that the exposure wavelength of the photolithography projection objective lens is 360 nm to 370 nm and the image-side numerical aperture is 0.45 to 0.

6. Claim 16 A photolithography projection objective lens according to claim 1, characterized in that the image-side field of view of the photolithography projection objective lens is 32.4 mm or less. Claim 17 A photolithography machine characterized by including a photolithography projection objective lens according to any one of claims 1 to 16.

Images