Silicon precursor material, silicon-containing film, and related method

Abstract

Some embodiments relate to a method for depositing a silicon precursor on a substrate. The method comprises the steps of obtaining a silicon precursor material comprising at least one siloxane linkage, and obtaining at least one co-reactant precursor material. The silicon precursor material is volatilized to obtain a silicon precursor vapor. At least one co-reactant precursor material is volatilized to obtain at least one co-reactant precursor vapor. Under chemical vapor deposition conditions sufficient to form a silicon-containing film on the surface of the substrate, the silicon precursor vapor and at least one co-reactant precursor vapor are brought into contact with the substrate. Some embodiments relate to a silicon precursor material for chemical vapor deposition.

Description

Technology Field

[0001] The present disclosure generally relates to silicon precursor materials, silicon-containing films, and related methods. Background Technology

[0002] Tetraethyl orthosilicate (TEOS) is used as a precursor to form thin films of silicon dioxide (e.g., SiO2) in a low-temperature vapor deposition process. The low-temperature vapor deposition process is performed at temperatures below 200°C. TEOS is not a suitable precursor for the formation of silicon-containing thin films via a high-temperature vapor deposition process.

[0003] summation

[0004] Some embodiments relate to precursors for chemical vapor deposition. In some embodiments, the precursor for chemical vapor deposition may comprise, be made of, or essentially consist of a silicon precursor material. In some embodiments, the silicon precursor material may comprise, be made of, or essentially consist of a compound of the following formula: (A 1 A 2 A 3 )Si-O-Si(B 1 B 2 B 3 ), here, A 1 , A 2 , A 3 , B 1 , B 2 , and B 3 Each is independently hydrogen, halide, alkyl, cycloalkyl, alkoxy, amino, alkylamino, aminoalkyl, ethynyl, phenyl, allyl, vinyl, or acetoxy. In some embodiments, the silicon precursor material may have reactivity with at least one co-reactant precursor material sufficient to result in a silicon-containing film as a reaction product under chemical vapor deposition conditions.

[0005] Some embodiments relate to a method for depositing a silicon precursor on a substrate. In some embodiments, the method may comprise, be composed of, or essentially consist of one or more of the following steps: obtaining a silicon precursor material comprising at least one siloxane linkage; obtaining at least one co-reactant precursor material; volatilizing the silicon precursor material to obtain a silicon precursor vapor; volatilizing at least one co-reactant precursor material to obtain at least one co-reactant precursor vapor; and contacting the silicon precursor vapor and at least one co-reactant precursor vapor with the substrate under chemical vapor deposition conditions sufficient to form a silicon-containing film on the surface of the substrate. Brief explanation of the drawing

[0006] Refer to the drawings which form part of the present disclosure and illustrate embodiments in which the materials and methods described herein may be practiced. Fig. 1 This is a flowchart of a method for depositing a silicon precursor on a substrate according to some embodiments of the present disclosure. Fig. 2 is a schematic diagram of a silicon-containing article according to some embodiments of the present disclosure. Fig. 3 This is a diagram showing the deposition rate of bis(diethylamino)-1,1,3,3-tetramethyldisiloxane (BDEA-TMDSO) compared with tetraethyl orthosilicate (TEOS) at 560°C and 650°C according to some embodiments of the present disclosure. Specific details for implementing the invention

[0007] As used herein, the term "siloxane linkage" refers to a linkage of the following chemical formula: -(Si-O-Si) n -, here, nThe number is 1 to 6. In some embodiments, one or more siloxane links may be associated to form a siloxane compound. In some embodiments, the siloxane compound may comprise, consist of, or essentially consist of at least one of disiloxane, oligosiloxane, cyclosiloxane, polysiloxane, or any combination thereof, or may be selected from the group consisting thereof. In some embodiments where two or more siloxane links are present, the siloxane links may share one or more silicon atoms.

[0008] As used herein, the term "alkyl" refers to a hydrocarbon chain radical having 1 to 30 carbon atoms. Alkyl groups may be attached via single bonds. n An alkyl group having 1 carbon atom is "C n It can be designated as "alkyl". For example, "C3alkyl" includes n -Propyl and isopropyl may be included. Alkyls having a range of carbon atoms, e.g., 1 to 30 carbon atoms, are C1-C 30 It may be designated as alkyl. In some embodiments, the alkyl is saturated (e.g., single bond). In some embodiments, the alkyl is unsaturated (e.g., double bond and / or triple bond). In some embodiments, the alkyl is linear. In some embodiments, the alkyl is branched. In some embodiments, the alkyl is substituted. In some embodiments, the alkyl is unsubstituted. In some embodiments, the alkyl is C1-C 12 Alkyl, C1-C 11 Alkyl, C1-C 10The alkyl group may comprise, consist of, or essentially consist of at least one of alkyl, C1-C9 alkyl, C1-C8 alkyl, C1-C7 alkyl, C1-C6 alkyl, C1-C4 alkyl, C1-C3 alkyl, or any combination thereof, or may be selected from the group consisting thereof. In some embodiments, the alkyl group may comprise, consist of, or essentially consist of, or be selected from the group consisting of methyl, ethyl, n-propyl, 1-methylethyl (iso-propyl), n-butyl, iso-butyl, sec-butyl, n-pentyl, 1,1-dimethylethyl (t-butyl), n-pentyl, iso-pentyl, n-hexyl, isohexyl, 3-methylhexyl, 2-methylhexyl, octyl, decyl, dodecyl, octadecyl, or at least one of any combination thereof.

[0009] As used herein, the term “cycloalkyl” refers to a non-aromatic carbocyclic ring radical attached by a single bond and having 3 to 8 carbon atoms in the ring. This term includes monocyclic non-aromatic carbocyclic rings and polycyclic non-aromatic carbocyclic rings. For example, two or more cycloalkyls may be fused, cross-linked, or fused and cross-linked to obtain a polycyclic non-aromatic carbocyclic ring. In some embodiments, the cycloalkyl may comprise, consist of, or essentially consist of at least one of cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, or any combination thereof, or may be selected from the group consisting thereof.

[0010] As used herein, the term “alkoxy” refers to a radical of the formula -OR, where R is an alkyl as defined herein. In some embodiments, the alkoxy may comprise, consist of, or essentially consist of at least one of methoxy, ethoxy, methoxy, ethoxy, n-propoxy, 1-methylethoxy (isopropoxy), n-butoxy, iso-butoxy, sec-butoxy, tert-butoxy, or any combination thereof, or may be selected from the group consisting thereof.

[0011] As used herein, terms such as "amine," "alkylamino," etc., refer to the chemical formula -N(R a R b R c Refers to the radical of ), where R a , R b , and R cEach is independently hydrogen or an alkyl as defined herein. In some embodiments, the term “amine” includes an amino as defined herein. In some embodiments, the amine may include, consist of, or essentially consist of a primary amine, a secondary amine, a tertiary amine, or a quaternary amine. In some embodiments, the amine may include, consist of, or essentially consist of an alkyl amine, a dialkylamine, or a trialkyl amine. In some embodiments, the amine may include, consist of, or essentially consist of at least one of methylamine, dimethylamine, ethylamine, diethylamine, isopropylamine, di-isopropylamine, butylamine, sec-butylamine, tert-butylamine, di-sec-butylamine, isobutylamine, di-isobutylamine, di-tert-pentylamine, ethylmethylamine, isopropyl-n-propylamine, or any combination thereof, or may be selected from the group consisting of, or consisting of, or essentially consisting of.Examples of alkylamines may include, without limitation, one or more of the following: primary alkylamines, e.g., and without limitation, methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, sec-butylamine, isobutylamine, t-butylamine, pentylamine, 2-aminopentane, 3-aminopentane, 1-amino-2-methylbutane, 2-amino-2-methylbutane, 3-amino-2-methylbutane, 4-amino-2-methylbutane, hexylamine, 5-amino-2-methylpentane, heptylamine, octylamine, nonylamine, decylamine, undecylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecylamine, and octadecylamine; Secondary alkylamines, e.g., e.g. and without limitation, dimethylamine, diethylamine, dipropylamine, diisopropylamine, dibutylamine, diisobutylamine, di-sec-butylamine, di-t-butylamine, dipentylamine, dihexylamine, diheptylamine, dioctylamine, dinonylamine, didecylamine, methylethylamine, methylpropylamine, methylisopropylamine, methylbutylamine, methylisobutylamine, methyl-sec-butylamine, methyl-t-butylamine, methylamylamine, methylisoamylamine, ethylpropylamine, ethylisopropylamine, ethylbutylamine, ethylisobutylamine, ethyl-sec-butylamine, ethylamine, ethylisoamylamine, propylbutylamine, and propylisobutylamine; and tertiary alkylamines, e.g., and without limitation, trimethylamine, triethylamine, tripropylamine, tributylamine, tripentylamine, dimethylethylamine, methyldiethylamine, and methyldipropylamine.Examples of polyamines may include, without limitation, one or more of the following: ethylenediamine, propylenediamine, trimethylenediamine, tetramethylenediamine, 1,3-diaminobutane, 2,3-diaminobutane, pentamethylenediamine, 2,4-diaminopentane, hexamethylenediamine, heptamethylenediamine, octamethylenediamine, nonamethylenediamine, N-methylethylenediamine, N,N-dimethylethylenediamine, trimethylethylenediamine, N-ethylethylenediamine, N,N-diethylethylenediamine, triethylethylenediamine, 1,2,3-triaminopropane, hydrazine, tris(2-aminoethyl)amine, tetra(aminomethyl)methane, diethylenetriamine, triethylenetetramine, tetraethylpentamine, heptaethyleneoctamine, nonaethylenedecamine, and diazabicycloundecene.

[0012] As used herein, the term "halide" refers to -Cl, -Br, -I, or -F.

[0013] The term "ethinyl" as used herein refers to -C≡CH.

[0014] The term "phenyl" as used herein refers to -C6H5.

[0015] The term "amino" as used herein refers to -NH2.

[0016] The term "allil" used in this institution refers to -CH2CH=CH2.

[0017] The term "vinyl" as used herein refers to -CH=CH2.

[0018] The term "acetoxy" as used herein refers to -OC(=O)CH3.

[0019] Some embodiments relate to silicon precursor materials. Silicon precursor materials may exhibit one or more of improved thermal stability at high temperatures (e.g., temperatures above 500°C) and improved thin film deposition rates (e.g., deposition rates two (2) times greater than the deposition rates of conventional precursor materials). Silicon precursor materials may exhibit improved performance in high-temperature chemical vapor deposition processes. Additional advantages of the silicon precursor materials of the present disclosure may include, without limitation, one or more of improved step coverage, particularly at low pressure, improved step coverage at high temperatures, and reduced amounts of impurities. Silicon precursor materials may be used in high-temperature chemical vapor deposition (CVD) processes to improve the quality of silicon-containing films produced therefrom.

[0020] In some embodiments, the silicon precursor material may comprise, consist of, or essentially consist of one or more siloxane links. For example, in some embodiments, the silicon precursor material may comprise, consist of, or essentially consist of one siloxane link, two siloxane links, three siloxane links, or four or more siloxane links.

[0021] In some embodiments, the silicon precursor material may comprise, be composed of, or essentially consist of a compound of the following formula:

[0022] (A 1 A 2 A 3 )Si-O-Si(B 1 B 2 B 3 ),

[0023] Here, A 1 , A 2 , A 3 , B 1 , B 2 , and B 3Each is independently hydrogen, halide, alkyl, cycloalkyl, alkoxy, amino, alkylamino, aminoalkyl, ethynyl, phenyl, allyl, vinyl, or acetoxy.

[0024] In some embodiments, the silicon precursor material may comprise, consist of, or essentially consist of at least one of the following, or may be selected from the group consisting of: bis(diethylamino)-1,1,3,3-tetramethyldisiloxane (BDEA-TMDSO), 1,3-bis(isopropylamino)tetramethyldisiloxane (BIPA-TMDSO), hexamethyldisiloxane (HMDSO), 1,3-diphenyl-1,3-dimethyldisiloxane, 1,1,3,3-tetramethyldisiloxane, 1,1,1-triethyl-3,3-dimethyldisiloxane, 1,1,3,3-tetra-n-octyldimethyldisiloxane, bis(nonafluorohexyl)tetramethyldisiloxane, 1,3-bis(trifluoropropyl)tetramethyldisiloxane, 1,3-di-n-butyltetramethyldisiloxane, 1,3-di-n-octyltetramethyldisiloxane, 1,3-diethyltetramethyldisiloxane, 1,3-diphenyltetramethyl-disiloxane, hexa-n-butyldisiloxane, hexaethyldisiloxane, hexavinyldisiloxane, 1,1,1,3,3-pentamethyl-3-acetoxydisiloxane, 1-allyl-1,1,3,3-tetramethyldisiloxane, 1,3-bis(3-aminopropyl)tetramethyldisiloxane, 1,3-bis(heptadecafluoro-1,1,2,2-tetrahydrodecyl)-tetramethyldisiloxane, 1,3-divinyltetraphenyldisiloxane, 1,3-divinyltetramethyl-disiloxane, 1,3-diallyltetakis(trimethylsiloxy)disiloxane, 1,3-Diallyltetramethyl-disiloxane, 1,3-Diphenyltetrakis(dimethylsiloxy)disiloxane, (3-chloropropyl)pentamethyl-disiloxane, 1,3-Divinyltetrakis(trimethylsiloxy)disiloxane, 1,1,3,3-tetraisopropyl-disiloxane, 1,1,3,3-tetravinyldimethyldisiloxane, 1,1,3,3-tetracyclopentyldichloro-disiloxane, vinylpentamethyldisiloxane, 1,3-Bis(3-chloroisobutyl)tetramethyldisiloxane, hexaphenyldisiloxane, 1,1,1-triethyl-3,3,3-trimethyldisiloxane, 1,3-Bis(chloromethyl)tetramethyldisiloxane, 1,1,3,3-tetramethyl-1,3-diethoxydisiloxane, 1,1,3,3-Tetraphenyldimethyldisiloxane, Methacryloxypentamethyl-disiloxane, Pentamethyldisiloxane, 1,3-Bis(3-chloropropyl)tetramethyldisiloxane, 1,3-Bis(4-hydroxybutyl)tetramethyldisiloxane, 1,3-Bis(triethoxysilylethyl)tetramethyl-disiloxane, 3-aminopropylpentamethyldisiloxane, 1,3-dichloro-1,3-diphenyl-1,3-dimethyldisiloxane, 1,3-diethynyltetramethyldisiloxane, n-butyl-1,1,3,3-tetramethyldisiloxane, 1,3-dichlorotetraphenyldisiloxane, 1,3-dichlorotetramethyl-disiloxane, 1,3-di-t-butyldisiloxane, 1,3-dimethyltetramethoxydisiloxane, 1,3-divinyltetraethoxydisiloxane, 1,1,3,3-tetraethoxy-1,3-dimethyldisiloxane, Vinyl-1,1,3,3-tetramethyldisiloxane, platinum-[1,3-bis(cyclohexyl)imidazole-2-ylidene divinyltetramethyldisiloxane, hexachlorodisiloxane (HCDSO), 1,1,3,3-tetraisopropyl-1-chlorodisiloxane, 1,1,1-trimethyl-3,3,3-triphenyldisiloxane, 1,3-bis(trimethylsiloxy)-1,3-dimethyldisiloxane, 3,3-diphenyl-tetramethyltrisiloxane, 3-phenylheptamethyltrisiloxane, hexamethylcyclotrisiloxane, n-propylheptamethyltrisiloxane, 1,5-diethoxyhexamethyltrisiloxane, 3-ethylheptamethyl-trisiloxane, 3-(tetrahydrofurfuryloxypropyl)heptamethyltrisiloxane, 3-(3,3,3-trifluoropropyl)heptamethyltrisiloxane, 1,1,3,5,5-pentaphenyl-1,3,5-trimethyltrisiloxane, octamethyltrisiloxane, 1,1,5,5-tetraphenyl-1,3,3,5-tetramethyltrisiloxane, hexaphenylcyclotrisiloxane, 1,1,1,5,5,5-hexamethyltrisiloxane, octachlorotrisiloxane, 3-phenyl-1,1,3,5,5-pentamethyltrisiloxane, (3,3,3-trifluoropropyl)methylcyclotrisiloxane, 1,3,5-trivinyl-1,1,3,5,5-pentamethyltrisiloxane, 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane, 3-(m-pentadecylphenoxypropyl)heptamethyltrisiloxane, Limoneneyltrisiloxane, 3-dodecylheptamethyltrisiloxane, 3-octylheptamethyltrisiloxane, 1,3,5-triphenyltrimethylcyclotrisiloxane, 1,1,1,3,3,5,5-heptamethyltrisiloxane, 1,1,3,3,5,5-Hexamethyltrisiloxane, 1,1,1,5,5,5-hexaethyl-3-methyltrisiloxane, 1,5-dichlorohexamethyltrisiloxane, 3-(3-hydroxypropyl)heptamethyltrisiloxane, hexamethylcyclomethylphosphonoxytrisiloxane, 3-octadecylheptamethyltrisiloxane, tetrakis(dimethylsiloxy)silane, 1,1,3,3,5,5,7,7-octamethyltetrasiloxane, diphenylsiloxane-dimethylsiloxane copolymer, 1,3-diphenyl-1,3-dimethyldisiloxane, octamethylcyclotetrasiloxane, 1,3-bis(trimethylsiloxy)-1,3-dimethyldisiloxane, dimethylsiloxane-[65-70%(60% propylene oxide / 40% ethylene oxide)] block Copolymer, bis(hydroxypropyl)tetramethyldisiloxane, tetra-n-propyltetramethylcyclotetrasiloxane, octaethylcyclotetrasiloxane, decamethyltetrasiloxane, dodecamethylcyclohexasiloxane, dodecamethylpentasiloxane, tetradecamethylhexasiloxane, hexaphenylcyclotrisiloxane, polydimethylsiloxane, polyoctadecylmethylsiloxane, hexacosyl-terminated polydimethylsiloxane, decamethylcyclopentasiloxane, poly(3,3,3-trifluoropropylmethylsiloxane), trimethylsiloxy-terminated polydimethylsiloxane, 1,1,3,3,5,5,7,7,9,9-decamethylpentasiloxane, triethylsiloxy-terminated polydiethylsiloxane, or any combination thereof.

[0025] The silicon precursor material may have reactivity with at least one co-reactant precursor material sufficient to result in a silicon-containing film as a reaction product under chemical vapor deposition conditions.

[0026] Fig. 1 This is a flowchart of a method for depositing a silicon precursor on a substrate according to some embodiments of the present disclosure. Fig. 1As illustrated in the figure, the method (100) may comprise, be composed of, or essentially consist of one or more of the following steps: a step of obtaining a silicon precursor material (102); a step of obtaining at least one co-reactant precursor material (104); a step of volatilizing the silicon precursor material to obtain a silicon precursor vapor (106); a step of volatilizing at least one co-reactant precursor material to obtain at least one co-reactant precursor vapor (108); and a step of contacting the silicon precursor vapor and at least one co-reactant precursor vapor with the substrate under chemical vapor deposition conditions sufficient to form a silicon-containing film on the surface of the substrate (110).

[0027] Step (102) may include, consist of, or essentially consist of obtaining a silicon precursor material. The silicon precursor material may include, consist of, or essentially consist of any one or more of the silicon precursor materials disclosed herein. Obtaining may include obtaining a container or other vessel containing the silicon precursor material. In some embodiments, the silicon precursor material may be obtained in a container or other vessel in which the silicon precursor material can be vaporized.

[0028] Step (104) may include, consist of, or essentially consist of obtaining at least one co-reactant precursor material. At least one co-reactant precursor material may be selected to obtain the desired silicon-containing film. In some embodiments, the desired silicon-containing film may include, consist of, or essentially consist of at least one of silicon nitride, silicon oxide, or any combination thereof. In some embodiments, at least one co-reactant precursor material may include, consist of, or essentially consist of N2, H2, NH3, N2H4, CH3HNNH2, CH3HNNHCH3, NCH3H2, NCH3CH2H2, N(CH3)2H, N(CH3CH2)2H, N(CH3)3, N(CH3CH2)3, Si(CH3)2NH, pyrazolin, pyridine, ethylenediamine, radicals thereof, or any combination thereof. In some embodiments, at least one co-reactant precursor material may comprise, consist of, or essentially consist of at least one of H2, O2, O3, H2O, H2O2, NO, N2O, NO2, CO, CO2, carboxylic acid, alcohol, diol, radicals thereof, or any combination thereof. Obtaining may involve obtaining a vessel or other container comprising at least one co-reactant precursor material. In some embodiments, at least one co-reactant precursor material may be obtained in a vessel or other container in which at least one co-reactant precursor material can be vaporized.

[0029] Step (106) may include, consist of, or essentially consist of volatilizing a silicon precursor material to obtain silicon precursor vapor. Volatilization may include, consist of, or essentially consist of heating the silicon precursor material sufficiently to obtain silicon precursor vapor. In some embodiments, volatilization may include, consist of, or essentially consist of heating a container containing the silicon precursor material. In some embodiments, volatilization may include, consist of, or essentially consist of heating the silicon precursor material in a deposition chamber where a chemical vapor deposition process is performed. In some embodiments, volatilization may include, consist of, or essentially consist of heating a conduit for delivering the silicon precursor material, silicon precursor vapor, or any combination thereof, for example, to the deposition chamber. In some embodiments, volatilization may include, consist of, or essentially consist of operating a vapor delivery system containing the silicon precursor material. In some embodiments, volatilization may include, consist of, or essentially consist of heating the silicon precursor material to a temperature sufficient to vaporize it to obtain silicon precursor vapor. In some embodiments, volatilization may include, consist of, or essentially consist of heating to a temperature below the decomposition temperature of at least one of the silicon precursor material, silicon precursor vapor, or any combination thereof. In some embodiments, the silicon precursor material may exist in a gaseous state, in which case step (106) is optional and not mandatory. For example, the silicon precursor material may include, consist of, or essentially consist of silicon precursor vapor.

[0030] Step (108) may include, consist of, or essentially consist of volatilizing at least one co-reactant precursor material to obtain at least one co-reactant precursor vapor. In some embodiments, volatilization may include, consist of, or essentially consist of heating at least one co-reactant precursor material sufficiently to obtain at least one co-reactant precursor vapor. In some embodiments, volatilization may include, consist of, or essentially consist of heating a vessel containing at least one co-reactant precursor material. In some embodiments, volatilization may include, consist of, or essentially consist of heating at least one co-reactant precursor material in a deposition chamber where a chemical vapor deposition process is performed. In some embodiments, volatilization may include, consist of, or essentially consist of heating a conduit for delivering at least one co-reactant precursor material, at least one co-reactant precursor vapor, or any combination thereof, for example, to a deposition chamber. In some embodiments, volatilization may comprise, be accomplished by, or essentially consist of operating a vapor transfer system comprising at least one co-reactant precursor material. In some embodiments, volatilization may comprise, be accomplished by, or essentially consist of heating at least one co-reactant precursor material to a temperature sufficient to vaporize at least one co-reactant precursor vapor. In some embodiments, volatilization may comprise, be accomplished by, or essentially consist of heating at least one of at least one co-reactant precursor material, at least one co-reactant precursor vapor, or any combination thereof to a temperature below the decomposition temperature.In some embodiments, at least one co-reactant precursor material may exist in a gaseous state, in which case step (108) is optional and not mandatory. For example, at least one co-reactant precursor material may include, consist of, or essentially consist of at least one co-reactant precursor vapor.

[0031] Step (110) may include, be composed of, or essentially composed of contacting a silicon precursor vapor and at least one co-reactant precursor vapor with a substrate under chemical vapor deposition conditions sufficient to form a silicon-containing film on the surface of the substrate. Contact may be performed, for example and without limitation, in any system, apparatus, device, assembly, chamber thereof, or component thereof suitable for a chemical vapor deposition process, particularly including a deposition chamber. The silicon precursor vapor and at least one co-reactant precursor may be in contact with the substrate simultaneously. For example, the silicon precursor vapor, at least one co-reactant precursor vapor, and the substrate may each be present simultaneously in the deposition chamber. Thus, contact may include contemporaneous or simultaneous contact between the silicon precursor vapor and at least one co-reactant precursor vapor and the substrate.

[0032] At least silicon precursor vapor, at least one type of co-reactant precursor vapor, and the simultaneous contact or simultaneous contact of the substrate can distinguish the chemical vapor deposition (CVD) process disclosed herein from the atomic layer deposition (ALD) process. In atomic layer deposition, the substrate is contacted alternately and sequentially with each vapor phase precursor (e.g., in one or more cycles). For example, a first vapor phase precursor may be contacted with the substrate in a chamber during a first period without the presence of any other vapor phase precursor. When the excess first vapor phase precursor is removed from the chamber, a second vapor phase precursor may be contacted with the substrate in a chamber during a second period without the presence of any other vapor phase precursor. Additional vapor phase precursors may be used, and this process may be repeated in one or more cycles or pulses. In the chemical vapor deposition process disclosed herein, since both vapor phase precursors may be contacted with the substrate simultaneously, they are not contacted alternately and sequentially with the substrate, unlike in the atomic layer deposition process. Accordingly, the contact may not involve the silicon precursor vapor and at least one co-reactant precursor vapor each contacting the substrate alternately. For example, in some embodiments, the contact does not involve the silicon precursor vapor and at least one co-reactant precursor vapor each contacting the substrate sequentially. In some embodiments, the silicon precursor vapor and at least one co-reactant precursor vapor each contacting the substrate alternately and sequentially does not involve the silicon precursor vapor and at least one co-reactant precursor vapor each contacting the substrate alternately and sequentially.

[0033] Chemical vapor deposition conditions may include, consist of, or essentially consist of a deposition temperature. The deposition temperature may be a temperature below the thermal decomposition temperature of at least one of the silicon precursor vapor, at least one co-reactant precursor vapor, or any combination thereof. The deposition temperature may be sufficiently high to reduce or prevent condensation of at least one of the silicon precursor vapor, at least one co-reactant precursor vapor, or any combination thereof. In some embodiments, the substrate may be heated to the deposition temperature. In some embodiments, a chamber or other vessel in which the substrate comes into contact with the silicon precursor vapor and at least one co-reactant precursor vapor is heated to the deposition temperature. In some embodiments, at least one of the silicon precursor vapor, at least one co-reactant precursor vapor, or any combination thereof may be heated to the deposition temperature.

[0034] The deposition temperature may be a temperature of 200°C to 2500°C. In some embodiments, the deposition temperature may be a temperature of 500°C to 700°C. For example, in some embodiments, the deposition temperature may be a temperature of 500°C to 680°C, 500°C to 660°C, 500°C to 640°C, 500°C to 620°C, 500°C to 600°C, 500°C to 580°C, 500°C to 560°C, 500°C to 540°C, 500°C to 520°C, 520°C to 700°C, 540°C to 700°C, 560°C to 700°C, 580°C to 700°C, 600°C to 700°C, 620°C to 700°C, 640°C to 700°C, 660°C to 700°C, or 680°C to 700°C.In another embodiment, the deposition temperature is a temperature greater than 200°C to 2500°C, e.g., e.g., 400°C to 2000°C, 500°C to 2000°C, 550°C to 2400°C, 600°C to 2400°C, 625°C to 2400°C, 650°C to 2400°C, 675°C to 2400°C, 700°C to 2400°C, 725°C to 2400°C, 750°C to 2400°C, 775°C to 2400°C, 800°C to 2400°C, 825°C to 2400°C, 850°C to 2400°C, 875°C to 2400°C, 900°C to 2400°C, 925°C to 2400℃, 950℃ to 2400℃, 975℃ to 2400℃, 1000℃ to 2400℃, 1025℃ to 2400℃, 1050℃ to 2400℃, 1075℃ to 2400℃, 1100℃ to 2400℃, 1200℃ to 2400℃, 1300℃ to 2400℃, 1400℃ to 2400℃, 1500℃ to 2400℃, 1600℃ to 2400℃, 1700℃ to 2400℃, 1800℃ to 2400℃, 1900℃ to 2400℃, 2000℃ to 2400℃, 2100℃ to 2400℃, The temperature may be 2200°C to 2400°C, 2300°C to 2400°C, 500°C to 2000°C, 500°C to 1900°C, 500°C to 1800°C, 500°C to 1700°C, 500°C to 1600°C, 500°C to 1500°C, 500°C to 1400°C, 500°C to 1300°C, 500°C to 1200°C, 500°C to 1100°C, 500°C to 1000°C, 500°C to 1000°C, 500°C to 900°C, or 500°C to 800°C.

[0035] Chemical vapor deposition conditions may include, consist of, or essentially consist of a deposition pressure. In some embodiments, the deposition pressure may include, consist of, or essentially consist of a vapor pressure of at least one of silicon precursor vapor, at least one co-reactant precursor vapor, or any combination thereof. In some embodiments, the deposition pressure may include, consist of, or essentially consist of a chamber pressure.

[0036] The deposition pressure may be a pressure of 0.001 Torr to 100 Torr. For example, in some embodiments, the deposition pressure may be a pressure of 1 Torr to 30 Torr, 1 Torr to 25 Torr, 1 Torr to 20 Torr, 1 Torr to 15 Torr, 1 Torr to 10 Torr, 5 Torr to 50 Torr, 5 Torr to 40 Torr, 5 Torr to 30 Torr, 5 Torr to 20 Torr, or 5 Torr to 15 Torr. In another embodiment, the deposition pressure is 1 Torr to 100 Torr, 5 Torr to 100 Torr, 10 Torr to 100 Torr, 15 Torr to 100 Torr, 20 Torr to 100 Torr, 25 Torr to 100 Torr, 30 Torr to 100 Torr, 35 Torr to 100 Torr, 40 Torr to 100 Torr, 45 Torr to 100 Torr, 50 Torr to 100 Torr, 55 Torr to 100 Torr, 60 Torr to 100 Torr, 65 Torr to 100 Torr, 70 Torr to 100 Torr, 75 Torr to 100 Torr, 80 Torr to 100 Torr, 85 Torr to 100 Torr, 90 Torr to The pressure may be 100 Torr, 95 Torr to 100 Torr, 1 Torr to 95 Torr, 1 Torr to 90 Torr, 1 Torr to 85 Torr, 1 Torr to 80 Torr, 1 Torr to 75 Torr, or 1 Torr to 70 Torr.In other additional embodiments, the deposition pressure may be a pressure of 1 mTorr to 100 mTorr, 1 mTorr to 90 mTorr, 1 mTorr to 80 mTorr, 1 mTorr to 70 mTorr, 1 mTorr to 60 mTorr, 1 mTorr to 50 mTorr, 1 mTorr to 40 mTorr, 1 mTorr to 30 mTorr, 1 mTorr to 20 mTorr, 1 mTorr to 10 mTorr, 100 mTorr to 300 mTorr, 150 mTorr to 300 mTorr, 200 mTorr to 300 mTorr, or 150 mTorr to 250 mTorr, or 150 mTorr to 225 mTorr.

[0037] Contact may be sufficient to result in a deposition rate of 1 to 50 nm / min. For example, in some embodiments, the contact is 10 to 35 nm / min, 11 to 35 nm / min, 12 to 35 nm / min, 13 to 35 nm / min, 10 to 32 nm / min, 11 to 32 nm / min, 12 to 32 nm / min, 13 to 32 nm / min, 15 to 32 nm / min, 16 to 32 nm / min, 17 to 32 nm / min, 18 to 32 nm / min, 19 to 32 nm / min, 20 to 32 nm / min, 21 to 32 nm / min, 22 to 32 nm / min, 23 to 32 nm / min, 24 to 32 nm / min, 25 to 32 nm / min, 26 to 32 nm / min, 27 to 32 nm / min, 28 to 32 It may be sufficient to result in a deposition rate of nm / min, 29 to 32 nm / min, or 30 to 32 nm / min. In some embodiments, the deposition rate may refer to one or more of the deposition temperature and deposition pressure among other chemical vapor deposition conditions. In some embodiments, contact may be sufficient to result in a deposition rate of 1 to 1500 nm / min, 1 to 1400 nm / min, 1 to 1300 nm / min, 1 to 1200 nm / min, 1 to 1100 nm / min, 1 to 1000 nm / min, 1 to 900 nm / min, 1 to 800 nm / min, 1 to 700 nm / min, 1 to 600 nm / min, 1 to 500 nm / min, 1 to 400 nm / min, 1 to 300 nm / min, 1 to 200 nm / min, or 1 to 100 nm / min.

[0038] Contact may be sufficient to result in a step coverage of 10% to 80%. For example, in some embodiments, contact may be sufficient to result in a step coverage of 30% to 45%, 31% to 45%, 32% to 45%, 33% to 45%, 34% to 45%, 35% to 45%, 36% to 45%, 37% to 45%, 38% to 45%, 39% to 45%, or 40% to 45%. In some embodiments, the step coverage may refer to one or more of the deposition temperature and deposition pressure among other chemical vapor deposition conditions.

[0039] Contact may be sufficient to result in a deposition rate 1.2 to 5 times greater than that of a silicon precursor material control, where the silicon precursor material control includes tetraethoxysilane (TEOS). For example, in some embodiments, contact results in a deposition rate 1.4 to 3 times greater than the silicon precursor material control, a deposition rate 1.5 to 3 times greater than the silicon precursor material control, a deposition rate 1.6 to 3 times greater than the silicon precursor material control, a deposition rate 1.7 to 3 times greater than the silicon precursor material control, a deposition rate 1.8 to 3 times greater than the silicon precursor material control, a deposition rate 1.9 to 3 times greater than the silicon precursor material control, a deposition rate 2 to 3 times greater than the silicon precursor material control, a deposition rate 2.1 to 3 times greater than the silicon precursor material control, a deposition rate 2.2 to 3 times greater than the silicon precursor material control, a deposition rate 2.3 to 3 times greater than the silicon precursor material control, and a deposition rate 2.4 to 3 times greater than the silicon precursor material control. The rate may be sufficient to result in a deposition rate 2.5 to 3 times greater than that of the silicon precursor material control group, or a deposition rate 2.6 to 3 times greater than that of the silicon precursor material control group. In some embodiments, the deposition rate may refer to one or more of the deposition temperature and deposition pressure among other chemical vapor deposition conditions.

[0040] The contact may be sufficient to result in a wet etching rate of 1 to 20 nm / min. For example, in some embodiments, the contact is 1 to 19 nm / min, 1 to 18 nm / min, 1 to 17 nm / min, 1 to 16 nm / min, 1 to 15 nm / min, 1 to 14 nm / min, 1 to 13 nm / min, 1 to 12 nm / min, 1 to 11 nm / min, 1 to 10 nm / min, 1 to 9 nm / min, 1 to 8 nm / min, 1 to 7 nm / min, 1 to 6 nm / min, 1 to 5 nm / min, 1 to 4 nm / min, 2 to 20 nm / min, 3 to 20 nm / min, 4 to 20 nm / min, 5 to 20 nm / min, 6 to 20 nm / min, 7 to 20 nm / min, 8 to 20 nm / min, 9 to 20 nm / min, 10 to It may be sufficient to result in a wet etching rate of 20 nm / min, 11 to 20 nm / min, 12 to 20 nm / min, 13 to 20 nm / min, 14 to 20 nm / min, 15 to 20 nm / min, 16 to 20 nm / min, 17 to 20 nm / min, or 18 to 20 nm / min. In some embodiments, the wet etching rate is based on thermal oxidation in 100:1 HF.

[0041] Contact may be sufficient to cause less than 10% thermal shrinkage. For example, in some embodiments, the contact is 0.1% to 10%, 0.1% to 5%, 0.1% to 5%, 0.1% to 4.8%, 0.1% to 4.6%, 0.1% to 4.4%, 0.1% to 4.2%, 0.1% to 4%, 0.1% to 3.8%, 0.1% to 3.6%, 0.1% to 3.4%, 0.1% to 3.2%, 0.1% to 3%, 0.1% to 2.8%, 0.1% to 2.6%, 0.1% to 2.4%, 0.1% to 2.2%, 0.1% to 2%, 0.1% to 1.8%, 0.1% to 1.6%, 0.1% to It may be sufficient to cause thermal shrinkage of 1.4%, 0.1% to 1.2%, 0.1% to 1%, 0.1% to 0.8%, 0.1% to 0.6%, 0.1% to 0.5%, or 0.1% to 0.4%.

[0042] The substrate may comprise, be composed of, or essentially consist of at least one of Si, Co, Cu, Al, W, WN, WC, TiN, Mo, MoC, SiO2, W, SiN, WCN, Al2O3, AlN, ZrO2, La2O3, TaN, RuO2, IrO2, Nb2O3, Y2O3, hafnium oxide, or any combination thereof. In some embodiments, the substrate may comprise one or more of other silicon-based substrates, such as, for example, a polysilicon substrate, a metallic substrate, and a dielectric substrate.

[0043] Some embodiments are silicon-containing films, for example Fig. 1 This relates to a silicon-containing film manufactured according to the method.

[0044] Fig. 2 is a schematic diagram of a silicon-containing article according to some embodiments of the present disclosure. Fig. 2As shown in the figure, the silicon-containing article (200) may comprise, be made of, or essentially made of a substrate (202) and a silicon-containing film (204). In an exemplary embodiment, the silicon-containing article (200) comprises the silicon-containing film (204) on at least a portion of the substrate (202).

[0045] Example 1

[0046] silicon precursor material

[0047] Non-limiting examples of silicon precursor materials include bis(diethylamino)-1,1,3,3-tetramethyldisiloxane (BDEA-TMDSO). The chemical structure of BDEA-TMDSO is shown below:

[0048]

[0049] Example 2

[0050] silicon precursor material

[0051] Non-limiting examples of silicon precursor materials include 1,3-bis(isopropylamino)tetramethyldisiloxane (BIPA-TMDSO). The chemical structure of BIPA-TMDSO is shown below:

[0052]

[0053] Example 3

[0054] silicon precursor material

[0055] Non-limiting examples of silicon precursor materials include hexachlorodisiloxane (HCDSO). The chemical structure of HCDSO is shown below:

[0056]

[0057] Example 4

[0058] silicon precursor material

[0059] Non-limiting examples of silicon precursor materials include hexamethyldisiloxane (HMDSO). The chemical structure of HMDSO is shown below:

[0060]

[0061] Example 5

[0062] Calmness speed

[0063] Several chemical vapor deposition processes were carried out using a control precursor of tetraethoxysilane (TEOS) and a silicon precursor including BDEA-TMDSO. The deposition rates of BDEA-TMDSO and TEOS, respectively, were measured at 560°C and 650°C. Fig. 3 As shown in the figure, the deposition rate of BDEA-TMDSO was observed to be 2.5 times faster than the deposition rate of TEOS at 650°C and 2.8 times faster than the deposition rate of TEOS at 560°C.

[0064] Example 6

[0065] silicon precursor material

[0066] Chemical vapor deposition processes were performed using the silicon precursor materials of Examples 1 to 4. For comparison, tetraethoxysilane (TEOS) was used as a control precursor material. All precursor materials were deposited at deposition temperatures of 550°C to 650°C and a pressure of 3.5 Torr. Deposition rates and step coverages are summarized in Table 1 below.

[0067] Table 1: Summary of Calmness Rate and Step Coverage

[0068]

[0069] Based on the data in Table 1, the deposition rate of the silicon precursor material was up to 4.2 times greater than that of the control precursor material. In addition, the step coverage of the silicon precursor material was up to 1.4 times greater than that of the control precursor material.

Claims

Claim 1 A method for depositing a silicon precursor on a substrate, comprising the steps of: obtaining a silicon precursor material comprising at least one siloxane linkage; obtaining at least one co-reactant precursor material; volatilizing the silicon precursor material to obtain silicon precursor vapor; volatilizing at least one co-reactant precursor material to obtain at least one co-reactant precursor vapor; and contacting the silicon precursor vapor and at least one co-reactant precursor vapor with the substrate under chemical vapor deposition conditions sufficient to form a silicon-containing film on the surface of the substrate, wherein the contact is sufficient to result in a deposition rate of the silicon precursor on the substrate that is 1.5 to 3 times greater than the deposition rate of the silicon precursor on the substrate of a silicon precursor material control group comprising tetraethoxysilane (TEOS). Claim 2 The method of claim 1, wherein the silicon precursor material comprises a compound of the following chemical formula: (A 1 A 2 A 3 )Si-O-Si(B 1 B 2 B 3 )(Here, A 1 , A 2 , A 3 , B 1 , B 2 , and B 3 Each is independently hydrogen, halide, alkyl, cycloalkyl, alkoxy, amino, alkylamino, aminoalkyl, ethinyl, phenyl, allyl, vinyl, or acetoxy). Claim 3 The method of claim 1, wherein the silicon precursor material comprises at least one of bis(diethylamino)-1,1,3,3-tetramethyldisiloxane (BDEA-TMDSO), 1,3-bis(isopropylamino)tetramethyldisiloxane (BIPA-TMDSO), or any combination thereof. Claim 4 delete Claim 5 A precursor for chemical vapor deposition comprising a silicon precursor material, wherein the silicon precursor material is a compound of the following chemical formula (A 1 A 2 A 3 )Si-O-Si(B 1 B 2 B 3 )(Here, A 1 , A 2 , A 3 , B 1 , B 2 , and B 3 Each is independently hydrogen, halide, alkyl, cycloalkyl, alkoxy, amino, alkylamino, aminoalkyl, ethynyl, phenyl, allyl, vinyl, or acetoxy); wherein the silicon precursor material has reactivity with at least one co-reactant precursor material sufficient to result in a silicon-containing film as a reaction product under chemical vapor deposition conditions, wherein the silicon precursor material and at least one co-reactant precursor material are volatilized to obtain silicon precursor vapor and at least one co-reactant precursor vapor, and when the silicon precursor vapor and at least one co-reactant precursor vapor come into contact with a substrate, the contact is sufficient to result in a deposition rate of the silicon precursor on the substrate that is 1.5 to 3 times greater than the deposition rate of the silicon precursor on the substrate of a silicon precursor material control group comprising tetraethoxysilane (TEOS). Claim 6 delete Claim 7 delete Claim 8 delete Claim 9 delete Claim 10 delete Claim 11 delete Claim 12 delete Claim 13 delete Claim 14 delete Claim 15 delete Claim 16 delete Claim 17 delete Claim 18 delete Claim 19 delete Claim 20 delete

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