Film formation method and film formation device

Abstract

[Project] Reduce the hydrogen content of a silicon-containing film formed using silicon hydride gas. [Solution] A substrate is mounted on a mounting platform inside a processing vessel, silicon hydride gas and other gases are supplied inside the processing vessel, the silicon hydride gas is dissociated inside the processing vessel to generate high-density plasma, and a silicon-containing film is formed on the substrate using the high-density plasma, the electron density of the high-density plasma is 1×10¹¹ / cm³ or higher, the temperature of the mounting platform when forming the silicon-containing film is controlled to be 150°C or higher and 400°C or lower, and the power density of the high-frequency power supplied to the plasma generation means of the processing vessel when generating the high-density plasma is 0.14W / cm² to 2.98W / cm².

Description

Technology Field

[0001] The present disclosure relates to a tabernacle method and a tabernacle apparatus. Background Technology

[0002] Organic EL devices that have been widely used in recent years are current-driven devices, and it is necessary to realize high-speed switching operation in the thin film transistor (TFT) used as a semiconductor device for organic EL devices. Therefore, an oxide semiconductor that obtains high electron mobility, such as IGZO composed of oxides of indium (In), gallium (Ga), and zinc (Zn), is used in the channel of the TFT. In addition, to reliably protect the channel made of oxide semiconductors from external moisture, a protective film that encapsulates the channel is composed of, for example, a silicon nitride (SiN) film or a silicon oxide (SiO) film.

[0003] In addition, it has been proposed to use silicon chloride (SiCl4) gas or silicon fluoride (SiF4) gas as a silicon-containing gas that does not contain hydrogen atoms for the formation of silicon nitride films or silicon oxide films (see, for example, Patent Document 1). Prior art literature

[0004] Japanese Patent Publication No. 2015-012131 The problem to be solved

[0005] The technology according to the present disclosure reduces the hydrogen content of a silicon-containing film formed using silicon hydride gas. means of solving the problem

[0006] One aspect of the technology according to the present disclosure is a film deposition method for performing a film deposition treatment on a substrate inside a processing vessel, comprising: a step of mounting a substrate on a mounting platform inside the processing vessel; a step of supplying silicon hydride gas and other gases inside the processing vessel; a step of dissociating the silicon hydride gas inside the processing vessel to generate a high-density plasma; and a step of forming a silicon-containing film on the substrate using the high-density plasma, wherein the electron density of the high-density plasma is 1×10 11 / cm 3 The above applies, wherein in the process of forming the silicon-containing film, the temperature of the mounting base is controlled to be 150°C or higher and 400°C or lower, and in the process of generating the high-density plasma, the power density of the high-frequency power supplied to the plasma generating means of the processing vessel is 0.14 W / cm² 2 ~2.98W / cm² 2 am. Effects of the invention

[0007] According to the technology of the present disclosure, the hydrogen content of a silicon-containing film formed using silicon hydride gas can be reduced. Brief explanation of the drawing

[0008] FIG. 1 is a cross-sectional view schematically showing the configuration of a film-forming device as an embodiment of the technology according to the present disclosure. Figure 2 is a drawing showing the case where the metal window equipped with the membrane device of Figure 1 is viewed from the processing space side. FIG. 3 is a cross-sectional view showing the configuration of a bottom-gate type TFT having a protective film formed by applying the film formation method as an embodiment. FIG. 4 is a flowchart illustrating a method for forming a protective film as a film formation method according to the present embodiment. FIG. 5 is a flowchart showing a modified example of a protective film formation method as a film formation method according to the present embodiment. Figure 6 is a flowchart showing a modified example of the protective film formation method of Figure 4. Figure 7 is a flowchart showing a modified example of the protective film formation method of Figure 5. FIG. 8 is a cross-sectional view schematically showing the configuration of a first variant of a film-forming device to which the technology according to the present disclosure is applied. FIG. 9 is a cross-sectional view schematically showing the configuration of a second modified example of a film-forming device to which the technology according to the present disclosure is applied. FIG. 10 is a cross-sectional view schematically showing the configuration of a third variant of a film-forming device to which the technology according to the present disclosure is applied. Specific details for implementing the invention

[0009] In the technology of the aforementioned Patent Document 1, silicon chloride gas or silicon fluoride gas is used to form a silicon nitride film or a silicon oxide film as a protective film. However, depending on the configuration or application of the device on which the protective film is formed, there are cases where the characteristics of a protective film formed using silane (SiH4) gas, which is a silicon hydride gas, are desired.

[0010] Meanwhile, when forming a protective film using silane gas, if the silane gas is dissociated to generate plasma, if the silane gas is not sufficiently dissociated, the plasma may contain a large amount of silicon hydride (SiH) ions in addition to silicon (Si) ions. If a large amount of silicon hydride ions other than silicon ions contribute to the formation of the protective film, the protective film will contain many hydrogen atoms, and there is a problem in that the hydrogen atoms in the protective film will detach oxygen atoms from the oxide semiconductor over time, thereby changing the properties of the protective film.

[0011] In response to this, the technology according to the present disclosure sufficiently dissociates the silane gas to reduce the amount of silicon hydride ions generated in the plasma, thereby suppressing the silicon hydride ions from contributing to the formation of a silicon-containing film as a protective film, and thus reducing the hydrogen content of the silicon-containing film.

[0012] Hereinafter, an embodiment of the technology according to the present disclosure will be described with reference to the drawings. FIG. 1 is a cross-sectional view schematically showing the configuration of a film-forming device as an embodiment, and FIG. 2 is a drawing showing the case where a metal window provided by the film-forming device (10) of FIG. 1 is viewed from the side of the processing space.

[0013] The film-forming device (10) of FIG. 1 is an inductively coupled plasma processing device. The film-forming device (10) uses high-density plasma generated from a processing gas to perform a film-forming process to form a protective film on a rectangular substrate, for example, a glass substrate (G) for an FPD (Flat Panel Display) (hereinafter referred to as "substrate (G)").

[0014] The film formation device (10) is provided with a rectangular processing vessel (11) made of a conductive material, for example, aluminum or an aluminum-containing alloy, and the processing vessel (11) accommodates a substrate (G) and is electrically grounded. The inner wall surface of the processing vessel (11) may be made of pure aluminum or an aluminum alloy, or may be coated with anodized aluminum after anodizing treatment. The upper part of the processing vessel (11) is hermetically sealed by a window member (12) (a part constituting a plasma generating means). Inside the processing vessel (11), a mounting platform (13) for mounting the substrate (G) is arranged at the bottom, and the mounting platform (13) faces the window member (12). In addition, a processing space (U) is formed between the mounting platform (13) and the window member (12) in the processing vessel (11). In the processing space (U), high-density plasma is generated from the processing gas as described later.

[0015] The mounting base (13) is composed of a conductive material, for example, aluminum with anodized surface treatment, an aluminum-containing alloy, or stainless steel. Additionally, the mounting base (13) may be covered with a ceramic film by thermal spraying. An electrostatic chuck (not shown) is provided on the upper surface of the mounting base (13), and a substrate (G) mounted on the mounting base (13) is adsorbed and held to the mounting base (13) by the electrostatic chuck. Furthermore, a temperature control mechanism such as a chiller or a heat supply mechanism (not shown) is provided inside the mounting base (13) to control the temperature of the mounted substrate (G) by controlling the temperature of the mounting base (13). Meanwhile, the mounting base (13) is installed on the bottom surface of the processing vessel (11) via an insulating frame (14).

[0016] A metal frame (15) is provided at the top of the side wall of the processing container (11), and a side wall portion (16) is installed on the upper surface of the metal frame (15). The side wall portion (16) supports the ceiling plate (17) and is electrically grounded, and the ceiling plate (17) covers the window member (12) from above. Meanwhile, a sealing member (18), such as an O-ring, is provided between the side wall of the processing container (11) and the metal frame (15) to maintain a hermetic seal on the processing space (U). Additionally, an inlet / outlet port (19) for bringing a substrate (G) into and out of the processing space (U) and a gate valve (20) for opening and closing the inlet / outlet port (19) are provided on the side wall of the processing container (11).

[0017] As shown in FIG. 2, the window member (12) has a rectangular shape and is divided into a plurality of segments (21). In this embodiment, the window member (12) is divided into 24 segments (21), but the number of segments (21) is not limited to 24 and changes depending on the size of the window member (12) or the controllability of the plasma distribution. Each segment (21) is composed, for example, of a non-magnetic or conductive metal, aluminum, or an alloy containing aluminum. In the window member (12), a partition member (22) composed of an insulator is disposed between each of the adjacent segments (21). The partition member (22) divides the adjacent segments (21) and electrically insulates them from each other. Meanwhile, to prevent consumption of each partition member (22) by high-density plasma, the surface facing the processing space (U) of each partition member (22) may be covered by an insulating cover member.

[0018] Returning to FIG. 1, in the membrane device (10), the space enclosed by the window member (12), the side wall (16), and the ceiling plate (17) constitutes an antenna room (23). In the antenna room (23), an inductively coupled antenna (24) (part of the plasma generating means) is arranged so as to face the substrate (G) of the mounting base (13) through the window member (12). The inductively coupled antenna (24) is arranged apart from the window member (12) through a spacer made of an insulator, for example, not shown. Additionally, the inductively coupled antenna (24) is formed in a spiral shape so as to be arranged across the area facing each dividing piece (21) and to rotate along the circumferential direction of the window member (12). Meanwhile, the inductively coupled antenna (24) may be an annular antenna consisting of one or more antenna wires. Additionally, the inductively coupled antenna (24) may be arranged in multiple concentrically. Additionally, the inductive coupling antenna (24) may be configured to form an annular antenna as a whole by arranging a plurality of antenna units in the circumferential direction of the window member (12). At that time, each antenna unit may be positioned to span each dividing piece (21) or not spanned, depending on the processing content. Meanwhile, as an example, a plasma generation means is configured by the window member (12) and the inductive coupling antenna (24).

[0019] As shown in FIG. 1, a plurality of gas holes (25) are formed in each segment (21) that open toward a processing space (U). A gas supply pipe (26) is connected to each segment (21), and the gas supply pipe (26) is connected to a gas supply device (27) (gas supply means). Additionally, a gas diffusion chamber (28) is formed inside each segment (21), and the gas supply device (27) introduces processing gas into the gas diffusion chamber (28) through the gas supply pipe (26). The processing gas introduced into the gas diffusion chamber (28) is supplied to the processing space (U) from each gas hole (25). Thus, each segment (21) has a gas shower structure consisting of each gas hole (25) and a gas diffusion chamber (28).

[0020] A gas supply device (27) is connected to a silane gas source (29) that supplies silane (SiH4) gas as silicon hydride gas and a nitrogen gas source (30) that supplies nitrogen (N2) gas as a nitrogen-containing gas (an example of another gas). Additionally, an oxygen gas source (31) that supplies oxygen (O2) gas as an oxygen-containing gas (an example of another gas) and an argon gas source (32) that supplies argon (Ar) gas as a dilution gas are connected to the gas supply device (27). Based on instructions from a control unit (40) described later, the gas supply device (27) controls the flow rate of each gas flowing into the gas supply device (27) from each gas source (29 to 32) and mixes each gas in the gas supply device (27) to produce a treatment gas.

[0021] In addition, in the film formation device (10), a high-frequency power supply (34) is connected to the inductive coupling antenna (24) via a matching device (33). The high-frequency power supply (34) supplies, for example, high-frequency power for plasma generation of 13.56 MHz to the inductive coupling antenna (24). As a result, in each of the segmented pieces (21) constituting the window member (12), an eddy current is induced to circulate from the upper surface (inductive coupling antenna (24) side) to the lower surface (processing space (U) side), and an induced electric field is formed in the processing space (U) by this eddy current. Then, this induced electric field excites the processing gas supplied to the processing space (U) to generate a high-density plasma.

[0022] Additionally, a high-frequency power supply (36) is connected to the mounting platform (13) via a matching device (35). The high-frequency power supply (36) supplies, for example, 3.2 MHz of high-frequency power for bias to the mounting platform (13). By doing so, various ions in the high-density plasma of the processing space (U) can be introduced into the substrate (G), and a film deposition process can be performed to form a protective film on the substrate (G).

[0023] In the film deposition device (10), since each partition (21) is electrically insulated from other partitions (21) by a partition member (22), eddy currents are induced individually in each partition (21) of the window member (12), and an induced electric field is generated individually in the area facing each partition (21). Therefore, by changing the size or arrangement of each partition (21), the distribution of the induced electric field generated in the processing space (U) can be controlled, and thus, the degree of film deposition treatment performed on the substrate (G) (e.g., film deposition speed, film quality, etc.) can be controlled locally.

[0024] In addition, since the degree of film formation is also influenced by temperature, a temperature control channel (37) is formed inside each segment (21) in the film formation device (10). A cooling medium or a heating medium is introduced into the temperature control channel (37), and the degree of film formation is controlled by adjusting each segment (21) to a desired temperature.

[0025] Furthermore, in the film formation device (10), an exhaust port (38) is formed on the bottom surface of the processing vessel (11). An exhaust device (39), such as a turbo molecular pump or a dry pump, is connected to this exhaust port (38). When performing the film formation process, the exhaust device (39) maintains the processing space (U) at a predetermined pressure lower than atmospheric pressure. Additionally, a control unit (40) is provided in the film formation device (10). The control unit (40) is composed of a computer having at least a CPU and memory, and a recipe (program) for performing a predetermined film formation process is recorded in the memory.

[0026] FIG. 3 is a cross-sectional view showing the configuration of a bottom-gate type TFT having a protective film formed by applying the film formation method of the present embodiment.

[0027] In FIG. 3, the TFT (41) has an undercoat layer (42) formed on a substrate (G) and a gate electrode (43) partially formed on the undercoat layer (42). Additionally, the TFT (41) has a gate insulating film (44) made of a multilayer insulating film formed to cover the undercoat layer (42) and the gate electrode (43), and a channel (45) formed to be placed directly above the gate electrode (43) on the gate insulating film (44). Furthermore, the TFT (41) has a source electrode (46) and a drain electrode (47) formed on each side of the channel (45) on the gate insulating film (44). Additionally, the TFT (41) has a passivation layer (48) made of a multilayer insulating film formed to cover the channel (45), the source electrode (46), and the drain electrode (47). The passivation layer (48) is an example of a protective film that suppresses moisture entering the channel (45) from above, and the gate insulating film (44) is an example of a protective film that suppresses moisture entering the channel (45) from below. Meanwhile, the gate insulating film (44) also serves as a protective film, but primarily has the function of controlling the electric field applied to the channel (45) to control electrical conduction between the source electrode (46) and the drain electrode (47).

[0028] In the TFT (41), the channel (45) is composed of an oxide semiconductor, such as IGZO, for example, and the gate insulating film (44) has a silicon nitride film (44a) (an example of a silicon-containing film) and a silicon oxide film (44b) (an example of a silicon-containing film) stacked from the bottom in the drawing. Additionally, the passivation layer (48) has a silicon oxide film (48a) (an example of a silicon-containing film) and a silicon nitride film (48b) (an example of a silicon-containing film) stacked from the bottom in the drawing. Accordingly, the silicon oxide film (44b) in the gate insulating film (44) contacts the channel (45), and the silicon oxide film (48a) in the passivation layer (48) contacts the channel (45). Here, the silicon oxide film (44b), the silicon oxide film (48a), and the channel (45) are all made of oxide and act as oxygen sources for each other. Therefore, in the TFT (41), by bringing the silicon oxide film (44b) or the silicon oxide film (48a) into contact with the channel (45), oxygen extraction from the channel (45) can be prevented, thereby suppressing the degradation of the channel (45)'s characteristics.

[0029] Meanwhile, in the gate insulating film (44), the boundary between the silicon nitride film (44a) and the silicon oxide film (44b) is somewhat ambiguous, so there is a portion where the silicon nitride film (44a) and the silicon oxide film (44b) are mixed. Also, in the passivation layer (48), the boundary between the silicon oxide film (48a) and the silicon nitride film (48b) is somewhat ambiguous, so there is a portion where the silicon oxide film (48a) and the silicon nitride film (48b) are mixed.

[0030] FIG. 4 is a flowchart illustrating a method for forming a protective film as a film formation method according to the present embodiment, and is applied, for example, to the formation of the gate insulating film (44) of FIG. 3. The method for forming a protective film of FIG. 4 is executed by a control unit (40) controlling the operation of each component of the film formation device (10) according to a predetermined recipe.

[0031] First, a substrate (G) having an undercoat layer (42) and a gate electrode (43) formed thereon is brought in from an adjacent transport room (not shown) into the interior of a processing vessel (11) of a film deposition device (10) that has been depressurized in advance by an exhaust device (39), and is mounted on a mounting platform (13) (Step S41). The transport room is connected to the processing vessel (11) and is depressurized to the same degree as the processing vessel (11). Meanwhile, in subsequent processing, the temperature of the mounting platform (13) is continuously controlled by a temperature control mechanism, for example, from 150°C to 400°C, preferably from 150°C to 250°C, and the heat of the mounting platform (13) is transferred to the substrate (G) through a heat transfer gas supplied between the back surface of the substrate (G) and the mounting platform (13) by a heat transfer gas supply mechanism, for example. As a result, the temperature of the substrate (G) is also continuously controlled, for example, to 150°C to 400°C, preferably to 150°C to 250°C.

[0032] Next, the introduction of treatment gas from the gas supply device (27) into the interior of the treatment vessel (11) is initiated (step S42). At this time, the pressure inside the treatment vessel (11) exhausted by the exhaust device (39) is adjusted by the control unit (40) to, for example, 1.3 Pa to 20 Pa (10 mTorr to 150 mTorr). The introduced treatment gas is a mixed gas of silane gas, nitrogen gas, and argon gas, and is generated by the gas supply device (27) mixing the silane gas, nitrogen gas, and argon gas that flow into the gas supply device (27) from each gas supply source (29, 30, 32). Accordingly, in step S42, the introduction of silane gas and nitrogen gas into the interior of the treatment vessel (11) is initiated.

[0033] Next, the high-frequency power supply (34) begins supplying high-frequency power for plasma generation to the inductive coupling antenna (24), and the high-frequency power supply (36) begins supplying high-frequency power for bias to the mounting base (13) (step S43).

[0034] At this time, an induced electric field is formed in the processing space (U), and this induced electric field excites the processing gas supplied to the processing space (U) to generate a high-density plasma. In addition, the power density of the high-frequency power supplied by the high-frequency power source (34) to the inductively coupled antenna (24) is, for example, 0.14 W / cm² 2 ~2.98W / cm² 2 , preferably, 0.45W / cm² 2 ~2.61W / cm² 2 This is a very high value. As a result, a strong induced electric field is generated, causing the dissociation of the treatment gas to proceed sufficiently, so that the electron density is, for example, 1×10⁻⁶ 11 / cm 3 ~1×10 12 / cm 3 A high-density plasma (first high-density plasma) is generated. Then, the dissociation of the silane gas in the processing gas proceeds sufficiently, and most of the silane gas dissociates into silicon ions and hydrogen ions without generating almost any silicon hydride ions.

[0035] At this time, silicon ions or nitrogen ions in the high-density plasma generated from the processing gas are introduced into the substrate (G) by the bias potential of the mounting plate (13), and a silicon nitride film (44a) covering the gate electrode (43) is formed on the surface of the substrate (G).

[0036] After the silicon nitride film (44a) is formed, the gas supply device (27) changes the treatment gas introduced into the interior of the treatment vessel (11). The treatment gas after the change is a mixture of silane gas, oxygen gas, and argon gas. After the nitrogen gas supply source (30) stops supplying nitrogen gas, the oxygen gas supply source (31) starts supplying oxygen gas, and the gas supply device (27) mixes the silane gas, oxygen gas, and argon gas flowing into the gas supply device (27) from each gas supply source (29, 31, 32). As a result, the introduction of nitrogen gas into the interior of the treatment vessel (11) is stopped, and the introduction of oxygen gas is started (step S44). Meanwhile, during the period from when the introduction of nitrogen gas into the treatment vessel (11) is stopped until the introduction of oxygen gas is started, the exhaust of the treatment vessel (11) and the supply of high-frequency power from the high-frequency power source (34, 36) continue without interruption.

[0037] The treatment gas after the introduced change is also sufficiently dissociated by a strong induced electric field caused by the supply of high-power density high-frequency power from the inductively coupled antenna (24). Even at this time, the electron density is, for example, 1×10 11 / cm 3 ~1×10 12 / cm 3 A high-density plasma (second high-density plasma) is generated. Then, the dissociation of silane gas in the treatment gas after the change proceeds sufficiently, and most of the silane gas dissociates into silicon ions and hydrogen ions without generating almost any silicon hydride ions.

[0038] In addition, silicon ions or oxygen ions in the high-density plasma generated from the processing gas after modification are introduced into the substrate (G) by the bias potential of the mounting base (13), and a silicon oxide film (44b) covering the silicon nitride film (44a) is formed on the surface of the substrate (G). By doing so, a two-layer gate insulating film (44) is formed.

[0039] After that, the gas supply device (27) stops introducing the processing gas into the interior of the processing vessel (11). As a result, the introduction of silane gas or oxygen gas into the interior of the processing vessel (11) is stopped (step S45). Subsequently, the high-frequency power supply (34) or the high-frequency power supply (36) stops supplying high-frequency power for plasma generation or high-frequency power for bias (step S46). After that, the substrate (G) on which the gate insulating film (44) is formed is transferred from the interior of the processing vessel (11) to the return chamber (step S47), and the processing is completed.

[0040] In the treatment of FIG. 4 described above, a silicon oxide film was formed after the silicon nitride film was formed, but the order of forming the protective film is not limited to this, and as explained in FIG. 5 below, a silicon nitride film may be formed after the silicon oxide film was formed.

[0041] FIG. 5 is a flowchart showing a modified example of a protective film formation method as a film formation method according to the present embodiment, and is applied, for example, to the formation of the passivation layer (48) of FIG. 3. The protective film formation method of FIG. 5 is also executed by the control unit (40) controlling the operation of each component of the film formation device (10) according to a predetermined recipe. Meanwhile, in FIG. 5, steps that perform the same processing as each step of the processing of FIG. 4 are given the same reference numeral and their descriptions are omitted.

[0042] First, a substrate (G) having a channel (45), a source electrode (46), or a drain electrode (47) formed on a gate insulating film (44) is brought in from an adjacent transport room (not shown) into the interior of a processing vessel (11) of a film deposition device (10) that has been depressurized in advance by an exhaust device (39), and is mounted on a mounting platform (13) (step S41). Meanwhile, in the processing of FIG. 5, the transport room is depressurized to the same extent as the processing vessel (11), and the temperature of the mounting platform (13) is continuously controlled by a temperature control mechanism to, for example, 150°C to 400°C, preferably 150°C to 250°C, and the temperature of the substrate (G) is also continuously controlled to the same temperature.

[0043] Next, the introduction of treatment gas from the gas supply device (27) into the interior of the treatment vessel (11) is initiated (step S51). At this time, the pressure inside the treatment vessel (11) exhausted by the exhaust device (39) is adjusted by the control unit (40) to, for example, 1.3 Pa to 20 Pa (10 mTorr to 150 mTorr). The introduced treatment gas is a mixed gas of silane gas, oxygen gas, and argon gas, and is generated by the gas supply device (27) mixing the silane gas, oxygen gas, and argon gas that flow into the gas supply device (27) from each gas supply source (29, 31, 32). Accordingly, in step S51, the introduction of silane gas and oxygen gas into the interior of the treatment vessel (11) is initiated.

[0044] Next, step S43 is executed. At this time as well, the power density of the high-frequency power supplied by the high-frequency power source (34) to the inductively coupled antenna (24) is, for example, 0.14 W / cm² 2 ~2.98W / cm² 2 , preferably, 0.45W / cm² 2 ~2.61W / cm² 2 This is a very high value. As a result, the electron density is, for example, 1×10⁻⁶ 11 / cm 3 ~1×10 12 / cm 3 A high-density plasma is generated, and the dissociation of the silane gas in the processing gas proceeds sufficiently, so that most of the silane gas is dissociated into silicon ions and hydrogen ions without generating almost any silicon hydride ions. Then, silicon ions or oxygen ions in the high-density plasma generated from the processing gas are introduced into the substrate (G) by the bias potential of the mounting plate (13), and a silicon oxide film (48a) covering the channel (45), source electrode (46), and drain electrode (47) is formed on the surface of the substrate (G).

[0045] After the silicon oxide film (48a) is formed, the gas supply device (27) changes the treatment gas introduced into the interior of the treatment vessel (11). The treatment gas after the change is a mixture of silane gas, nitrogen gas, and argon gas. After the oxygen gas supply source (31) stops supplying oxygen gas, the nitrogen gas supply source (30) starts supplying nitrogen gas, and the gas supply device (27) mixes the silane gas, nitrogen gas, and argon gas introduced into the gas supply device (27) from each gas supply source (29, 30, 32). As a result, the introduction of oxygen gas into the interior of the treatment vessel (11) is stopped, and the introduction of nitrogen gas is started (step S52). Meanwhile, during the period from when the introduction of oxygen gas into the treatment vessel (11) is stopped until the introduction of nitrogen gas is started, the exhaust of the treatment vessel (11) and the supply of high-frequency power from the high-frequency power source (34, 36) continue without interruption.

[0046] The treatment gas after the introduced modification is also sufficiently dissociated by a strong induced electric field, so that the electron density is, for example, 1×10⁻⁶ 11 / cm 3 ~1×10 12 / cm 3A high-density plasma is generated. Also, the dissociation of silane gas in the treatment gas after modification proceeds sufficiently, and most of the silane gas dissociates into silicon ions and hydrogen ions without generating almost any silicon hydride ions.

[0047] At this time, silicon ions or nitrogen ions in the high-density plasma generated from the processing gas after modification are introduced into the substrate (G) by the bias potential of the mounting base (13), and a silicon nitride film (48b) covering the silicon oxide film (48a) is formed on the surface of the substrate (G). By this, a two-layer passivation layer (48) is formed.

[0048] After that, the gas supply device (27) stops introducing the treatment gas into the interior of the treatment vessel (11). As a result, the introduction of silane gas or nitrogen gas into the interior of the treatment vessel (11) is stopped (step S53). Subsequently, steps S46 to S47 are executed, and the treatment is completed.

[0049] According to the treatment of FIG. 4 or FIG. 5, the treatment gas is sufficiently dissociated due to the high-frequency power of the power density supplied by the high-frequency power source (34) to the inductively coupled antenna (24), so that the electron density is, for example, 1×10⁻⁶ 11 / cm 3 ~1×10 12 / cm 3 A high-density plasma is generated. As a result, most of the silane gas is dissociated into silicon ions and hydrogen ions without generating silicon hydride ions from the silane gas in the processing gas, so silicon hydride ions contribute little to the formation of silicon nitride films (44a, 48b) or silicon oxide films (44b, 48a). Consequently, the hydrogen content of the silicon nitride films (44a, 48b) or silicon oxide films (44b, 48a) formed using silane gas can be reduced.

[0050] In addition, in the processing of FIG. 4 or FIG. 5, silicon nitride film (44a) and silicon oxide film (44b), or silicon oxide film (48a) and silicon nitride film (48b) are continuously formed in the same processing vessel (11) without changing the temperature of the mounting platform (13). Also, when changing the processing gas, the supply of high-frequency power from the high-frequency power source (34, 36) or the exhaust of the inside of the processing vessel (11) may be temporarily stopped. Furthermore, since the silicon nitride film (44a, 48b) or silicon oxide film (44b, 48a) formed by the processing of FIG. 4 or FIG. 5 has a low hydrogen content, heat treatment to remove hydrogen atoms from the film is unnecessary. Therefore, the throughput of forming the gate insulating film (44) or passivation layer (48) can be improved.

[0051] Furthermore, in the process of FIG. 4, the substrate (G) does not move from the film deposition device (10) to another film deposition device between the formation of the silicon nitride film (44a) and the formation of the silicon oxide film (44b). Also, in the process of FIG. 5, the substrate (G) does not move from the film deposition device (10) to another film deposition device between the formation of the silicon oxide film (48a) and the silicon nitride film (48b). Therefore, the attachment of particles, etc. to the substrate (G) accompanying the movement of the substrate (G) can be suppressed, and the quality of the electronic device formed on the substrate (G), for example, TFT, can be improved.

[0052] In addition, in the processing of FIG. 4 or FIG. 5, since the temperature of the mounting base (13), that is, the temperature of the substrate (G), does not exceed 400°C, the structure of the channel (45) composed of IGZO can be prevented from being destroyed by heat.

[0053] Meanwhile, the processing conditions of FIG. 4 and FIG. 5 are collectively shown in Table 1 below. The numbers in parentheses indicate more desirable conditions.

[0054]

[0055] In addition, the specifications of the silicon nitride film or silicon oxide film formed by the treatment of FIG. 4 or FIG. 5 are shown in Table 2 below.

[0056]

[0057] The hydrogen concentration (hydrogen content) values ​​of the silicon nitride film or silicon oxide film shown in Table 2 are lower than the typical hydrogen concentration values ​​in silicon nitride film or silicon oxide film formed under conditions requiring heat treatment to remove hydrogen atoms as a post-treatment.

[0058] Meanwhile, in the treatment of FIG. 4 or FIG. 5, nitrogen gas was used to form the silicon nitride film (44a, 48b), but ammonia (NH3) gas may be used instead of nitrogen gas. Also, oxygen gas was used to form the silicon oxide film (44b, 48a), but nitrous oxide (N2O) gas may be used instead of oxygen gas. Additionally, argon (Ar) gas was used as the diluent gas, but the diluent gas is not limited to this and other inert gases may be used.

[0059] Furthermore, in the membrane device (10), the gas supply device (27) mixes each gas to generate a treatment gas, and then supplies the treatment gas into the interior of the treatment container (11). However, instead of mixing each gas in the gas supply device (27), control valves may be provided at each gas supply source (29-32) so that various gases may be supplied directly from each gas supply source (29-32) into the interior of the treatment container (11). In this case, the operation of the control valves of each gas supply source (29-32) is controlled by the control unit (40).

[0060] In addition, the vertical relationship between the silicon nitride film and the silicon oxide film in the gate insulating film (44) or passivation layer (48) shown in FIG. 3 may be reversed. In this case, the treatment of FIG. 4 is used to form the passivation layer (48), and the treatment of FIG. 5 is used to form the gate insulating film (44).

[0061] Although preferred embodiments of the present disclosure have been described above, the present disclosure is not limited to the aforementioned embodiments, and various modifications and changes are possible within the scope of the gist thereof.

[0062] For example, in the processing of FIG. 4 or FIG. 5, as described above, there is no need to temporarily stop the supply of high-frequency power from the high-frequency power source (34, 36) when changing the processing gas. However, when changing the processing gas, the supply of high-frequency power from the high-frequency power source (34, 36) may be temporarily stopped.

[0063] FIG. 6 is a flowchart showing a modified example of the protective film formation method of FIG. 4. In the process of FIG. 6, unlike the process of FIG. 4, the supply of high-frequency power from the high-frequency power source (34, 36) is temporarily stopped when the processing gas is changed. Meanwhile, in FIG. 6, steps that perform the same processing as each step of FIG. 4 are given the same reference numeral and their descriptions are omitted.

[0064] First, steps S41 to S43 are executed and a silicon nitride film (44a) covering the gate electrode (43) on the substrate (G) is formed, after which the gas supply device (27) stops supplying the processing gas into the interior of the processing vessel (11). That is, it stops supplying the processing gas, such as silane gas or nitrogen gas, into the interior of the processing vessel (11) (step S61).

[0065] Next, the high-frequency power supply (34, 36) stops supplying high-frequency power (step S62). At this time, the high-density plasma in the processing space (U) is extinguished. After that, a scavenging gas is introduced into the interior of the processing vessel (11), and the exhaust device (39) exhausts the processing gas remaining in the processing space (U) from the interior of the processing vessel (11) together with the scavenging gas (step S63).

[0066] Next, the gas supply device (27) introduces the treatment gas after modification into the interior of the treatment vessel (11), and the pressure inside the treatment vessel (11) exhausted by the exhaust device (39) is adjusted by the control unit (40) to, for example, 1.3 Pa to 20 Pa (10 mTorr to 150 mTorr). The treatment gas after modification is a mixed gas of silane gas, oxygen gas, and argon gas. Consequently, the introduction of silane gas or oxygen gas into the interior of the treatment vessel (11) is initiated (step S64).

[0067] Next, the high-frequency power supply (34) begins supplying high-frequency power for plasma generation to the inductively coupled antenna (24), and the high-frequency power supply (36) begins supplying high-frequency power for bias to the mounting base (13) (step S65). The power density of the supplied high-frequency power for plasma generation is, for example, 0.14 W / cm² 2 ~2.98W / cm² 2 , preferably, 0.45W / cm² 2 ~2.61W / cm² 2 At this time, a silicon oxide film (44b) is formed by silicon ions or oxygen ions generated by the dissociation of the treatment gas after the change. Then, steps S45 to S47 are executed, and the treatment is completed.

[0068] FIG. 7 is a flowchart showing a modified example of the protective film formation method of FIG. 5. In the process of FIG. 7, unlike the process of FIG. 5, the supply of high-frequency power from the high-frequency power source (34, 36) is temporarily stopped when the processing gas is changed. Meanwhile, in FIG. 7, steps that perform the same processing as each step of FIG. 5 are given the same reference numeral and their descriptions are omitted.

[0069] First, steps S41, S51, and S43 are executed in sequence to form a silicon oxide film (48a) covering the channel (45), source electrode (46), or drain electrode (47) on the substrate (G). After that, the gas supply device (27) stops supplying the processing gas into the interior of the processing vessel (11). That is, it stops supplying the processing gas, such as silane gas or oxygen gas, into the interior of the processing vessel (11) (step S71).

[0070] Next, the high-frequency power supply (34, 36) stops supplying high-frequency power (step S72). At this time, the high-density plasma in the processing space (U) is extinguished. After that, a scavenging gas is introduced into the interior of the processing vessel (11), and the exhaust device (39) exhausts the processing gas remaining in the processing space (U) from the interior of the processing vessel (11) together with the scavenging gas (step S73).

[0071] Next, the gas supply device (27) introduces the treatment gas after modification into the interior of the treatment vessel (11), and the pressure inside the treatment vessel (11) exhausted by the exhaust device (39) is adjusted by the control unit (40) to, for example, 1.3 Pa to 20 Pa (10 mTorr to 150 mTorr). The treatment gas after modification is a mixed gas of silane gas, nitrogen gas, and argon gas. Consequently, the introduction of silane gas or nitrogen gas into the interior of the treatment vessel (11) is initiated (step S74).

[0072] Next, the high-frequency power supply (34) begins supplying high-frequency power for plasma generation to the inductively coupled antenna (24), and the high-frequency power supply (36) begins supplying high-frequency power for bias to the mounting base (13) (step S75). The power density of the supplied high-frequency power for plasma generation is, for example, 0.14 W / cm² 2 ~2.98W / cm² 2 , preferably, 0.45W / cm² 2 ~2.61W / cm² 2 At this time, a silicon nitride film (48b) is formed by silicon ions or nitrogen ions generated by the dissociation of the treatment gas after the change. Then, steps S53, S46, and S47 are executed in order, and the process is completed.

[0073] In the processing of FIG. 6 or FIG. 7, when the processing gas is changed, the supply of high-frequency power from the high-frequency power source (34, 36) is stopped, so the high-density plasma is extinguished. Furthermore, the processing gas remaining in the processing space (U) is exhausted from the inside of the processing vessel (11). Therefore, there is no case where nitrogen ions and oxygen ions are mixed in the high-density plasma in the processing space (U). As a result, in the gate insulating film (44), the boundary between the silicon nitride film (44a) and the silicon oxide film (44b) becomes clear, and no part where the silicon nitride film (44a) and the silicon oxide film (44b) are mixed occurs. In addition, in the passivation layer (48), the boundary between the silicon oxide film (48a) and the silicon nitride film (48b) is clear, so that no part where the silicon oxide film (48a) and the silicon nitride film (48b) are mixed occurs.

[0074] Meanwhile, the gate insulating film (44) or passivation layer (48) formed by the film formation method of the present embodiment has a two-layer structure in which a silicon nitride film and a silicon oxide film are stacked. However, the gate insulating film or passivation layer may have a multilayer structure in which a silicon nitride film and a silicon oxide film are stacked two or more times. In this case, the treatment of FIG. 4 or the treatment of FIG. 5 is repeated to form the gate insulating film or passivation layer.

[0075] Additionally, the gate insulating film or passivation layer may have a single-layer structure consisting only of a silicon nitride film or a single-layer structure consisting only of a silicon oxide film. In this case, in the process of FIG. 4, after the silicon nitride film (44a) is formed, steps S44 and S45 are skipped, the gas supply device (27) stops introducing the processing gas into the processing vessel (11), and then the process after step S46 is executed. In the process of FIG. 5, after the silicon oxide film (48a) is formed, steps S52 and S53 are skipped, the gas supply device (27) stops introducing the processing gas into the processing vessel (11), and then the process after step S46 is executed.

[0076] In the above-described embodiment, an example was described in which an inductively coupled film forming device (10) having a metal window member (12) divided into a plurality of segments (21) together with an inductively coupled antenna (24) is used as a plasma processing device to which the technology according to the present disclosure is applied.

[0077] However, the plasma processing apparatus to which the technology according to the present disclosure is applied is not limited to the film deposition apparatus (10) of FIG. 1. For example, the technology according to the present disclosure may be applied to an inductively coupled film deposition apparatus (50) having a dielectric wall (49) instead of a metal window member divided into a plurality of segments, which has an inductively coupled antenna (24) as shown in FIG. 8. Since the configuration of the film deposition apparatus (50) is basically the same as the configuration of the film deposition apparatus (10) and only the configuration related to the dielectric wall (49) is different, in FIG. 8, the same reference numerals are used for components identical to those in FIG. 1, and their descriptions are omitted below.

[0078] In the film formation device (50) of FIG. 8, a shower housing (51) for supplying processing gas is fitted onto the side of the dielectric wall (49) facing the processing space (U). The shower housing (51) is elongated and serves as a supporting member for supporting the dielectric wall (49), and is composed of, for example, a conductive metal, aluminum, or an alloy containing aluminum. Inside the shower housing (51), a gas diffusion chamber (52) extending horizontally is formed, and the gas diffusion chamber (52) communicates with the processing space (U) through a plurality of gas holes (53). A gas supply pipe (26) is connected to the shower housing (51), and a gas supply device (27) introduces processing gas into the gas diffusion chamber (52) through the gas supply pipe (26). The processing gas introduced into the gas diffusion chamber (52) is supplied to the processing space (U) from each gas hole (53).

[0079] Additionally, the plasma processing device to which the technology according to the present disclosure is applied may be a film-forming device (54) utilizing a helicon wave as shown in FIG. 9. The film-forming device (54) of FIG. 9 is equipped with a plasma generating unit (55) and a processing unit (56). The plasma generating unit (55) has a bell (57) constituting a plasma generating chamber, an antenna (58) on an inductive coupling coil disposed on the outer circumference of the bell (57), an inner coil (59) disposed on the outside of the antenna (58), and an outer coil (60). Additionally, a gas inlet (61) is provided in the bell (57). The processing unit (56) has a stage (62) inside, and a substrate (G) is mounted on the stage (62). In this film-forming device (54), a DC magnetic field generated by an antenna (58), an inner coil (59), and an outer coil (60) generates a helicon wave, and the processing gas introduced from the gas inlet (61) is dissociated inside the bell (57) by the helicon wave, thereby generating a high-density plasma. This high-density plasma performs film-forming treatment on a substrate (G) mounted on a stage (62).

[0080] Furthermore, the plasma processing device to which the technology according to the present disclosure is applied may be a film forming device (63) that utilizes the electron cyclotron resonance phenomenon as shown in FIG. 10.

[0081] The film-forming device (63) of FIG. 10 has a buffer room (79), a lower container (80), a magnetron (64), a waveguide (65), a cylindrical cavity (67), a ceiling plate (68), a solenoid coil (69), a microwave transmission window (70), a vacuum container (71), and a sample plate (72). Additionally, the film-forming device (63) has a high-frequency power supply (74), a variable valve (76), and an exhaust pump (77).

[0082] A lower container (80) is mounted at the bottom of the buffer chamber (79), and a sample stand (72) is provided in the lower container (80) in correspondence with the opening of the buffer chamber (79). The lower container (80) has a variable valve (76) in the middle, and an exhaust pump (77) is provided at the end of the lower container (80). A high-frequency power supply (74) is connected to the sample stand (72), and a high-frequency bias voltage is applied to the sample stand (72).

[0083] A cylindrical vacuum vessel (71) is mounted on the upper part of the buffer chamber (79), and a flat microwave-transmitting window (70) is hermetically mounted on the upper opening of the vacuum vessel (71), and a plasma generation chamber is formed by the vacuum vessel (71) and the microwave-transmitting window (70). On the upper part of the microwave-transmitting window (70), a ceiling plate (68) having a circular opening in the center is provided, and a cylindrical cavity (67) surrounded by the microwave-transmitting window (70) and the ceiling plate (68) is provided. A waveguide (65) and a magnetron (64) are sequentially electrically connected to the circular opening of the ceiling plate (68). A solenoid coil (69) is provided on the outer periphery of the cylindrical cavity (67) and the vacuum vessel (71).

[0084] In the film formation device (63), a magnetron (64) oscillates, for example, microwaves with a frequency of 2.45 GHz, and these microwaves are introduced into the interior of a cylindrical cavity (67) via a rectangular waveguide (65). At this time, the microwaves introduced into the interior of the cylindrical cavity (67) are introduced into a vacuum vessel (71) via a microwave transmission window (70). Meanwhile, a magnetic field is formed inside the vacuum vessel (71) by a solenoid coil (69). Then, due to the action of the microwaves introduced into the vacuum vessel (71) and the magnetic field produced by the solenoid coil (69), electrons receive a Lorentz force from the magnetic field and perform a rotational motion. When the period of rotational motion and the frequency of the microwaves almost coincide, the electrons efficiently receive energy from the microwaves, and a high-density plasma (81) is generated from the processing gas introduced into the vacuum vessel (71) by the electron cyclotron resonance phenomenon. This high-density plasma (81) performs film formation treatment on a substrate (G) mounted on a sample stand (72).

[0085] Meanwhile, the substrate (G) on which the film deposition process is performed in the film deposition apparatus (10, 50, 54, 63) is a liquid crystal display, an electroluminescence display, or a plasma display panel. However, the substrate on which the film deposition process is performed in these film deposition apparatuses is not limited to a glass substrate for an FPD. For example, the substrate may be a substrate for a solar cell panel or a silicon wafer for a semiconductor device.

[0086] In addition, in each of the aforementioned embodiments, a case was described in which high-frequency power for biasing is supplied to the mounting platform (13) or the sample platform (72) to actively introduce ions into the substrate (G), but it is not necessary to supply high-frequency power for biasing to the mounting platform (13), etc. In this case, film formation is mainly performed by electrically neutral radical species, but since a sheath is formed on the substrate (G) even without supplying high-frequency power, a small amount of ions are also introduced onto the substrate (G) and contribute to film formation. Explanation of the symbols

[0087] G substrate U processing space 10, 50, 54, 63 Tabernacle equipment 11 processing containers 12 Window Missing 13 Mounted 21 divided parts 22 Section Member 24 Inductively Coupled Antenna 27 Gas supply unit 34 High-frequency power supply 44 Gate insulation film 44a, 48b Silicon nitride film 44b, 48a silicon oxide film 48 Passivation layer

Claims

Claim 1 A film deposition method for performing a film deposition treatment on a substrate inside a processing vessel, comprising: a process of mounting a substrate on a mounting platform inside the processing vessel; a process of supplying silicon hydride gas and other gases inside the processing vessel; a process of dissociating the silicon hydride gas inside the processing vessel to generate a high-density plasma; and a process of forming a silicon-containing film on the substrate using the high-density plasma, wherein the electron density of the high-density plasma is 1×10 11 / cm 3 The above applies, wherein in the process of forming the silicon-containing film, the temperature of the mounting base is controlled to be 150°C or higher and 400°C or lower, and in the process of generating the high-density plasma, the power density of the high-frequency power supplied to the plasma generating means of the processing vessel is 0.14 W / cm² 2 ~2.98W / cm² 2 The method of the human tabernacle. Claim 2 A film formation method according to claim 1, wherein the temperature of the mounting base in the process of forming the silicon-containing film is controlled to be 150°C or higher and 250°C or lower. Claim 3 In claim 1, the power density of the high-frequency power supplied to the plasma generating means in the process of generating the high-density plasma is 0.45 W / cm² 2 ~2.61W / cm² 2 Person, Tabernacle method. Claim 4 A film formation method according to claim 1, wherein the other gas does not contain hydrogen atoms. Claim 5 In claim 1, the hydrogen concentration of the formed silicon-containing film is 2.0 × 10⁻⁶ 22 atoms / cm 3 Lee Ha-in, Tabernacle method. Claim 6 A film deposition method for performing a film deposition treatment on a substrate inside a processing vessel, comprising: a process of mounting a substrate on a mounting platform inside the processing vessel; a process of supplying silicon hydride gas and a nitrogen-containing gas inside the processing vessel; a process of generating a first high-density plasma by dissociating the silicon hydride gas and the nitrogen-containing gas inside the processing vessel; a process of forming a silicon nitride film on the substrate using the first high-density plasma; a process of supplying silicon hydride gas and an oxygen-containing gas inside the processing vessel; a process of generating a second high-density plasma by dissociating the silicon hydride gas and the oxygen-containing gas inside the processing vessel; and a process of forming a silicon oxide film on the substrate using the second high-density plasma, wherein the electron density of the first high-density plasma and the second high-density plasma is 1×10⁻⁶ 11 / cm 3 The above is as follows, and the hydrogen concentration of the silicon nitride film formed above is 2.0 × 10⁻⁶ 22 atoms / cm 3 The hydrogen concentration of the silicon oxide film formed above is 3.9 × 10⁻⁶. 21 atoms / cm 3 The method of the Tabernacle for the following people. Claim 7 A film formation method according to claim 6, wherein the temperature of the mounting plate in the process of forming the silicon nitride film and the process of forming the silicon oxide film is the same. Claim 8 A film formation method according to claim 7, wherein the temperature of the mounting plate in the process of forming the silicon nitride film and the process of forming the silicon oxide film is controlled to be 150°C or higher and 400°C or lower. Claim 9 A film formation method according to claim 8, wherein the temperature of the mounting plate in the process of forming the silicon nitride film and the process of forming the silicon oxide film is controlled to be 150°C or higher and 250°C or lower. Claim 10 In claim 6, the power density of the high-frequency power supplied to the plasma generating means having the processing vessel in the process of generating the first high-density plasma and the process of generating the second high-density plasma is 0.14 W / cm² 2 ~2.98W / cm² 2 Person, Tabernacle method. Claim 11 In claim 10, the power density of the high-frequency power supplied to the plasma generating means in the process of generating the first high-density plasma and the process of generating the second high-density plasma is 0.45 W / cm² 2 ~2.61W / cm² 2 Person, Tabernacle method. Claim 12 In claim 6, the film formation method wherein the process of forming the silicon oxide film is performed after the process of forming the silicon nitride film. Claim 13 A film formation method according to claim 12, wherein, between the process of forming the silicon nitride film and the process of forming the silicon oxide film, the supply of high-frequency power to the plasma generating means having the processing vessel is not interrupted, the supply of the silicon hydride gas into the processing vessel is not interrupted, and the first high-density plasma is transitioned to the second high-density plasma by changing the nitrogen-containing gas to the oxygen-containing gas. Claim 14 In claim 6, the film formation method wherein the process of forming the silicon nitride film is performed after the process of forming the silicon oxide film. Claim 15 A film formation method according to claim 14, wherein, between the process of forming the silicon oxide film and the process of forming the silicon nitride film, the supply of high-frequency power to the plasma generating means having the processing vessel is not interrupted, the supply of the silicon hydride gas into the processing vessel is not interrupted, and the second high-density plasma is transitioned to the first high-density plasma by changing the oxygen-containing gas to the nitrogen-containing gas. Claim 16 A film formation method according to claim 6, wherein the silicon hydride gas and the nitrogen-containing gas are mixed and then supplied into the interior of the treatment vessel, and the silicon hydride gas and the oxygen-containing gas are also mixed and then supplied into the interior of the treatment vessel. Claim 17 A processing vessel for receiving a substrate, a mounting platform disposed inside the processing vessel for mounting the substrate, a gas supply means for supplying silicon hydride gas and other gases inside the processing vessel, and a plasma generation means for dissociating the silicon hydride gas inside the processing vessel to generate a high-density plasma and forming a silicon-containing film on the substrate using the generated high-density plasma, wherein the electron density of the high-density plasma is 1×10 11 / cm 3 That is all; wherein, when the silicon-containing film is formed on the substrate, the mounting base maintains the temperature of the mounting base at 150°C or higher and 400°C or lower, and when generating the high-density plasma, the plasma generating means having the processing vessel has a power density of 0.14 W / cm² 2 ~2.98W / cm² 2 A membrane device supplied with high-frequency power. Claim 18 The apparatus comprises a processing vessel for receiving a substrate, a mounting platform disposed inside the processing vessel for mounting the substrate, a gas supply means for supplying silicon hydride gas and other gases inside the processing vessel, and a plasma generating means for dissociating the silicon hydride gas inside the processing vessel to generate a high-density plasma and forming a silicon-containing film on the substrate using the generated high-density plasma; wherein, when the gas supply means supplies the silicon hydride gas and a nitrogen-containing gas, the plasma generating means dissociates the silicon hydride gas and the nitrogen-containing gas inside the processing vessel to generate a first high-density plasma and forms a silicon nitride film on the substrate using the generated first high-density plasma; additionally, when the gas supply means supplies the silicon hydride gas and an oxygen-containing gas, the plasma generating means dissociates the silicon hydride gas and the oxygen-containing gas inside the processing vessel to generate a second high-density plasma and forms the generated silicon nitride film on the substrate 2. A silicon oxide film is formed using a high-density plasma, and the electron densities of the first high-density plasma and the second high-density plasma are 1×10⁻⁶ 11 / cm 3 The above is as follows, and the hydrogen concentration of the silicon nitride film formed above is 2.0 × 10⁻⁶ 22 atoms / cm 3 The hydrogen concentration of the silicon oxide film formed above is 3.9 × 10⁻⁶. 21 atoms / cm 3 Tabernacle apparatus for the following individuals. Claim 19 In claim 18, the plasma generating means comprises an inductively coupled antenna and a window member interposed between the inductively coupled antenna and the substrate, wherein the window member comprises a plurality of segmented pieces made of metal and a partitioning member made of an insulator partitioning each of the segmented pieces, and wherein the inductively coupled antenna has a power density of 0.14 W / cm² 2 ~2.98W / cm² 2 A film formation device that generates the first high-density plasma and the second high-density plasma by supplying high-frequency power.

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