Method of gap-fill for semiconductor device and method for manufacturing semiconductor device using the same

Abstract

A gap-filling method for a semiconductor device according to an embodiment comprises the steps of: preparing a substrate having a pattern formed thereon; supplying a process gas onto the substrate and applying a first VHF power source to form a pulse wave plasma to form a first silicon nitride film on the pattern; and supplying the process gas onto the substrate and applying a second VHF power source to form a continuous wave plasma to form a second silicon nitride film on the first silicon nitride film.

Description

Technology Field

[0001] The present invention relates to a gap-filling method for a semiconductor device and a method for manufacturing a semiconductor device using the same. Background Technology

[0002] As the integration density of semiconductor devices improves, the linewidths and spacing of their components are becoming increasingly finer. In particular, recently, semiconductor devices with a back-side power delivery network (BSPDN) structure are attracting attention to resolve issues such as bottlenecks associated with semiconductor devices featuring a front-side power delivery network (FSPDN) structure, where power lines, signal lines, and transistors are arranged in that order. It is expected that the aforementioned BSPDN structure will improve power efficiency and enhance chip performance in semiconductors undergoing increasingly finer manufacturing processes by placing power supply lines on the back of the wafer.

[0003] A semiconductor device with a BSPDN structure as described above requires a gap-filling process of silicon nitride film to align through silicon vias (TSVs). When using atomic layer deposition (ALD) to deposit the silicon nitride film and gap-fill a fine-sized pattern, the time required for gap-filling increases significantly, and there is a problem of seams being formed in the thin film. In addition, when using chemical vapor deposition (CVD) to deposit the silicon nitride film and gap-fill a fine-sized pattern, there is a problem of voids being easily formed in the thin film.

[0004] Conventionally, in order to perform a process for gap-filling silicon nitride on the above pattern, a silicon nitride film is deposited to a predetermined thickness on the surface of a step pattern, such as a trench formed on a substrate, using atomic layer deposition to gap-fill the pattern with silicon nitride. Subsequently, an overburden layer containing silicon nitride is formed on the surface of the silicon nitride film formed by atomic layer deposition using chemical vapor deposition. Then, the substrate on which the overburden layer (OL) is formed is planarized through a chemical mechanical polishing process. Afterward, a hard mask layer is formed on the upper surface of the substrate, an oxide is etched, and a semiconductor device is manufactured through a process of connecting via TSV.

[0005] However, the above-mentioned conventional method has the problem of low productivity because it requires two types of process equipment to form the gap-fill process and the overburden layer of silicon nitride, respectively, through a two-step process including an atomic layer deposition process and a chemical vapor deposition process, and the process time and complexity increase significantly. The problem to be solved

[0006] According to one embodiment, the present invention aims to provide technical content regarding a gap-filling method for a semiconductor device and a method for manufacturing a semiconductor device using the same, which enables the fabrication of a semiconductor device with excellent electrical characteristics by preventing the occurrence of defects such as seams and voids while allowing the gap-filling of a pattern in a short time through an in-situ process utilizing chemical vapor deposition. means of solving the problem

[0007] A gap-filling method for a semiconductor device according to an embodiment comprises: a process chamber having a processing space formed for thin film deposition; a substrate support member positioned inside the processing space and on which a patterned substrate is placed; a gas injection member positioned above the substrate support member for injecting gas onto the substrate; and a plasma power supply member for supplying power to at least one of the substrate support member and the gas injection member to generate plasma in the processing space. The method further comprises the steps of: preparing a patterned substrate; supplying a process gas onto the substrate and applying a first VHF power source to form a pulse wave plasma to form a first silicon nitride film on the pattern; and supplying the process gas onto the substrate and applying a second VHF power source to form a continuous wave plasma to form a second silicon nitride film on the first silicon nitride film.

[0008] According to one embodiment, the first silicon nitride film and the second silicon nitride film have different thicknesses, and the thickness of the first silicon nitride film may be thinner than the thickness of the second silicon nitride film.

[0009] According to one embodiment, the pulsed plasma may have a duty cycle of 20 to 80%.

[0010] According to one embodiment, the first VHF power source and the second VHF power source may each have a frequency of 27.12 MHz. In addition, the first VHF power source and the second VHF power source may each have different frequencies.

[0011] According to one embodiment, the pattern may have a critical dimension (CD) of 10 to 1,000 nm and an aspect ratio (AR) of 1 or less.

[0012] According to one embodiment, the process gas may include a silicon source gas comprising at least one of a SixHy silicon precursor, an organosilicon precursor compound, an alkyl silane, and an amino silane.

[0013] According to one embodiment, the process gas may include a nitrogen-containing gas comprising at least one of nitrogen (N2) gas, nitrogen dioxide (NO2) gas, nitrous oxide (N2O) gas, nitric oxide (NO) gas, ammonia (NH3) gas, and amine (R-NH2) gas.

[0014] Meanwhile, a method for manufacturing a semiconductor device according to an embodiment comprises: a step of preparing a substrate having a pattern formed thereon; a step of gap-filling the pattern by forming a first silicon nitride layer and a second silicon nitride layer on top of the pattern, respectively, using a gap-filling method for the semiconductor device described above; a step of polishing the substrate on which the first silicon nitride layer and the second silicon nitride layer are formed using a chemical mechanical polishing method; a step of forming a hard mask layer on top of the polished pattern; a step of etching the substrate on which the hard mask layer is formed; and a step of forming a silicon through-electrode on the etched substrate. Effects of the invention

[0015] The gap-filling method for a semiconductor device according to the embodiment utilizes an in-situ process in which a first silicon nitride film is deposited on the surface of a pattern by forming a pulsed plasma and a second silicon nitride film is deposited on top of the first silicon nitride film by forming a continuous plasma, thereby enabling gap-filling of a pattern having an aspect ratio in a short time using a single process equipment, which can improve productivity and prevent the occurrence of defects such as seams and voids, thereby enabling the manufacture of a semiconductor device with excellent electrical characteristics.

[0016] In particular, in the case of the conventional method of gap-filling a pattern with a silicon nitride film using atomic layer deposition and forming an overburden layer using chemical vapor deposition, the process time takes more than 30 minutes, but if the gap-filling method of the semiconductor device according to the embodiment is used, the process time can be shortened to within 10 minutes, so a significant improvement in productivity can be expected. Brief explanation of the drawing

[0017] FIG. 1 is a process diagram showing a gap-filling method for a semiconductor device according to an embodiment. FIGS. 2a to 2d are state diagrams showing the process of forming a first silicon nitride film and a second silicon nitride film, respectively, on a substrate on which a pattern is formed by a method according to an embodiment, and then polishing to form a TSV. FIG. 3 is a conceptual diagram showing a substrate processing apparatus for performing a gap-filling method of a semiconductor device according to an embodiment. FIG. 4 is a process diagram showing a method for manufacturing a semiconductor device according to an embodiment. FIG. 5 is an image of a cross-section of a gap-filled pattern according to (a) Example, (b) Comparative Example 1, and (c) Comparative Example 2. Specific details for implementing the invention

[0018] FIG. 1 is a process diagram showing a gap-filling method for a semiconductor device according to an embodiment. FIG. 2a to 2d are state diagrams showing the process of forming a first silicon nitride film (110) and a second silicon nitride film (130) respectively on a substrate (10) on which a pattern is formed according to an embodiment, and then polishing to form a TSV.

[0019] Referring to FIGS. 1 and 2, a gap-filling method for a semiconductor device according to an embodiment comprises the steps of: preparing a substrate (10) having a pattern formed thereon (S110); supplying a process gas and forming a pulsed plasma from a first VHF power source to form a first silicon nitride film (110) on the surface of the pattern (S130); and supplying the process gas and applying a second VHF power source to form a continuous plasma to form a second silicon nitride film (130) on the surface of the first silicon nitride film (110) (S150).

[0020] The gap-filling method of a semiconductor device according to the embodiment can be performed using a substrate processing device (200). The substrate processing device (200) will be described in more detail below.

[0021] Referring to FIG. 2(a), in the step (S100) of preparing the substrate (10), a substrate (10) with a pattern formed thereon is prepared.

[0022] The substrate (10) having the above pattern (P) formed thereon may be formed by etching a predetermined portion of a semiconductor substrate. The above pattern (P) is formed by being embedded to a certain depth from the surface of the substrate (10) and has a stepped structure, and may be any one of a plurality of hole patterns, via patterns, or trench patterns having an aspect ratio of a preset range. The substrate (10) having the above pattern (P) formed thereon may be manufactured using various conventional methods used to form patterns. The above pattern (P) may be formed by being directly embedded in the substrate (10), or it may be formed by being embedded on a thin film layer formed on the upper surface of the substrate (10). The above pattern may be formed using silicon oxide or silicon nitride.

[0023] In particular, the substrate (10) refers to any substrate (10) or a material surface formed on the substrate (10) on which each step of the process for forming a thin film is performed. For example, the substrate (10) may include materials such as silicon, silicon oxide, strained silicon, silicon-on-insulator (SOI), carbon-doped silicon oxide, amorphous silicon, doped silicon, germanium, gallium, arsenic, glass, sapphire, and any other materials, such as metals, metal nitrides, metal alloys, and other conductive materials.

[0024] Referring to FIG. 2(b), in the step (S130) of forming the first silicon nitride film (110), a process gas is supplied and a first VHF power source is applied to form a pulsed plasma, thereby forming the first silicon nitride film (110) on the surface of the pattern.

[0025] In this step, a process gas can be supplied to the processing space of the process chamber to form a first silicon nitride film (110) on the surface of the pattern.

[0026] The above process gas may include silicon source gas and nitrogen-containing gas.

[0027] The above silicon source gas may include a SixHy silicon precursor, an organosilicon precursor compound, an alkyl silane, an amino silane, or a mixture thereof.

[0028] The above Si X H Y Silicon precursors include monosilane (SiH4), disilane (Si2H6), trisilane (Si3H8), and tetrasilane (Si4H 10 ), isotetrasilane, neopentasilan (Si5H 12 ), cyclopentasilan (Si5H 10 ), hexasilane (Si6H 14 ), cyclohexasilane (Si6H 12 Representative examples include ) or mixtures thereof.

[0029] The above organosilicate precursor compounds are tetraethylorthosilicate (TEOS), dichlorosilane, dimethyldimethoxysilane, tetrachloride silicon, bis(tertiary-butylamino)silane, dichlorosilane, 1,3,5,7-tetramethylcyclotetrasiloxane, octamethyl cyclotetrasiloxanes, tris(tert-pentoxy)silanol, hexamethyldisilazane, tetrakis(dimethylamino) silicon, tetramethylsilane, Representative examples include tetramethyldisiloxane, diethylsilane, hexachlorodisilane, diethoxydimethylsilane, polydimethylsiloxane, or mixtures thereof.

[0030] Representative examples of the above alkyl silanes include methylsilane, dimethylsilane, trimethylsilane, tetramethylsilane, ethylsilane, diethylsilane, tetraethylsilane, propylsilane, dipropylsilane, isobutylsilane, tert-tertbutylsilane, dibutylsilane, methylethylsilane, dimethyldiethylsilane, methyltriethylsilane, ethyltrimethylsilane, isopropylsilane, diisopropylsilane, triisopropylsilane, or mixtures thereof.

[0031] Representative examples of the above amino silanes include diisopropylaminosilane (DIPAS), bisdiethylaminosilane (BDEAS), butylaminosilane (BAS), bistert-butylaminosilane (BTBAS), dimethylaminosilane (DMAS), bisdimethylaminosilane (BDMAS), trisdimethylaminosilane (TDMAS), diethylaminosilane (DEAS), dipropylaminosilane (DPAS), diisopropylaminosilane (DIPAS), or mixtures thereof.

[0032] The above nitrogen-containing gas may include at least one of nitrogen (N2) gas, nitrogen dioxide (NO2) gas, nitrous oxide (N2O) gas, nitric oxide (NO) gas, ammonia (NH3) gas, and amine (R-NH2) gas.

[0033] In this step, the process gas can be supplied and a first VHF (very high frequency) power source can be applied in the form of a pulse wave to form a pulse wave plasma.

[0034] The first VHF power source may have a frequency range of 20 to 70 MHz. In particular, the first VHF power source may have a frequency of 27.12 MHz.

[0035] The above pulsed plasma may be a pulsed plasma formed by applying a pulsed first VHF power source having a preset duty ratio in which an on / off cycle is repeated at regular time intervals.

[0036] In this step, the first plasma can be formed by applying a first VHF power supply with a duty cycle of 20 to 80%. In particular, the first plasma can be formed by applying a first VHF power supply with a duty cycle of 40 to 60%, preferably 50%.

[0037] The first plasma above activates the process gas to form multiple radicals. As the pulsed plasma is supplied with VHF power in a pulsed form, it exhibits a characteristic in which the separation distance between the radicals increases compared to the case where it is activated with a continuous wave plasma. Accordingly, the diffusion length of the radicals increases, thereby exhibiting excellent gap-fill performance within a pattern having an aspect ratio.

[0038] In addition, the first VHF power source can further increase the deposition rate on the lower surface of the pattern compared to the LF power source (low frequency) and HF (high frequency) power source, thereby further reducing the occurrence of defects such as seams and voids.

[0039] Referring to FIG. 2(c), in the step (S150) of forming the second silicon nitride film (130), the process gas is supplied and a second VHF power source is applied to form a continuous wave plasma, thereby forming the second silicon nitride film (130) on the surface of the first silicon nitride film (110).

[0040] In this step, a continuous wave plasma is formed to enable the formation of a second silicon nitride film (130) in a short time.

[0041] The second VHF power source may have a frequency range of 20 to 70 MHz. If necessary, the second VHF power source may have the same frequency range as the first VHF power source, or may have a different frequency. In particular, the second VHF power source may have a frequency of 27.12 MHz.

[0042] In this step, the second silicon nitride film (130) can be formed by supplying the same process gas as that supplied for forming the first silicon nitride film (110). In this step, if necessary, the second silicon nitride film (130) can be formed by supplying a process gas different from that supplied for forming the first silicon nitride film (110).

[0043] The first silicon nitride film (110) and the second silicon nitride film (130) may have different thicknesses. In particular, the thickness of the second silicon nitride film (130) may be thicker than the thickness of the first silicon nitride film (110).

[0044] The gap-fill method of a semiconductor device according to the embodiment described above can be utilized for gap-filling a pattern having a preset aspect ratio (AR).

[0045] Specifically, the pattern may have an aspect ratio of 1 or less. In particular, the pattern may have an aspect ratio of 0.1 to 1.

[0046] In addition, the pattern may have a diameter or critical dimension (CD) of the upper open surface of 10 to 1,000 nm. In particular, the pattern may have a critical dimension of 40 to 500 nm.

[0047] Referring to FIG. 2(d), the first silicon nitride film (110) and the second silicon nitride film (130) are formed on the substrate (10), and then the substrate (10) can be polished by a chemical mechanical polishing method. Accordingly, the pattern (P) may have a gap-filled structure in which a gap-fill film (110a) formed by the remaining first silicon nitride film (110) is formed, and the substrate (10) and the gap-fill film (110a) may have a flattened structure.

[0048] Meanwhile, the gap-filling method of the semiconductor device according to the embodiment can be performed using various types of conventional substrate processing devices used to deposit a thin film on a substrate (10) by performing plasma-enhanced chemical vapor deposition.

[0049] FIG. 3 is a schematic conceptual diagram showing a substrate processing apparatus (200) for performing a gap-filling method of a semiconductor device according to an embodiment.

[0050] The gap-filling method of a semiconductor device according to the embodiment can be performed using a substrate processing device (200) comprising a process chamber (210), a gas injection unit (220), a substrate support unit (230), and a plasma power supply unit (240).

[0051] First, the process chamber (210) may include a chamber body (211) with an open top and a top lid (213) installed on the upper outer periphery of the chamber body (211). The internal space of the top lid (213) may be closed by a gas injection unit (220) to form a processing space. The processing space provides a space for processing the substrate (10), such as a deposition process.

[0052] The above chamber body (211) may be provided with a gate (215) for the introduction and removal of a substrate (10) at a designated location on the side. Additionally, to vacuum the inside of the process chamber (210), a pump (219) may be connected to an exhaust port (217) located at the bottom of the process chamber (210).

[0053] The gas injection unit (220) may be installed inside the top lead (213) so as to face the substrate support (230). The gas injection unit (220) may receive various process gases supplied from the outside through a gas supply line and inject them into the chamber (200). The gas injection unit (220) may be implemented using a shower head, and the gas injection unit (220) equipped with such a shower head may act as a first electrode for generating plasma.

[0054] The above gas injection unit (220) can receive source gas, purge gas, reaction gas, carrier gas, etc., and inject them into the interior of the process chamber (210).

[0055] The substrate support member (230) serves to support a substrate within a processing space to perform substrate processing. To this end, the substrate support member (230) may include a mounting plate (231) and a support member (233). The mounting plate (231) may have an overall flat shape so that at least one substrate (10) is mounted on its upper surface. The support member (233) is vertically connected to the rear of the mounting plate (231) and connected to an external driving unit through a through hole at the bottom of the process chamber (210), so as to be configured to raise and lower the mounting plate (231) and rotate it in both directions.

[0056] Additionally, the mounting plate (231) can act as a second electrode for generating plasma, and accordingly, can form a structure that forms plasma at the bottom of the substrate so that ions move in a straight line on the pattern of the substrate. Additionally, the mounting plate (231) may be equipped with a lower electrode that is electrically connected to an RF power source or an external ground.

[0057] In addition, a heater (235) connected to a power supply unit that supplies power separately is provided inside the mounting plate (231) to control the temperature of the substrate (10) mounted on the upper part.

[0058] The plasma power supply unit (240) may be connected to a gas injection unit (220) or a substrate support unit (230) and may be configured to provide a very high frequency (VHF) power source with a center frequency band of 20 to 70 MHz as a plasma power source. The plasma power supply unit (240) may supply the VHF power in the form of a continuous wave and a pulse wave, respectively.

[0059] A substrate processing device according to an embodiment may include a gas supply unit (250). The gas supply unit (250) serves to supply process gas, inert gas, purge gas, etc., to the gas injection unit (220) to perform a substrate processing process. The gas supply unit (250) has a structure connected to the gas injection unit (220) via piping, and may have a structure in which a supply pump or a flow control valve, etc., is installed on the piping.

[0060] Meanwhile, FIG. 4 is a process diagram showing a method for manufacturing a semiconductor device according to an embodiment.

[0061] Referring to FIG. 4, a method for manufacturing a semiconductor device according to an embodiment may include the steps of: preparing a substrate (10) having a pattern formed thereon (S210); gap-filling the pattern (S220); polishing (S230); forming a hard mask layer (S240); etching (S250); and forming a silicon through-electrode (S260).

[0062] In the step (S210) of preparing the substrate (10) having the above pattern formed thereon, the substrate (10) having the above pattern formed thereon is placed in the processing space of the process chamber, and this can be performed in the same way as in the above step (S110).

[0063] In the step (S220) of gap-filling the pattern, a first silicon nitride film (110) and a second silicon nitride film (130) are each formed on the upper surface of the pattern in the manner described above to gap-fill the pattern. The first silicon nitride film (110) can gap-fill the pattern (P), and the second silicon nitride film (130) forms an overburden layer on the upper surface of the first silicon nitride film (110).

[0064] In the polishing step (S230), the substrate (10) on which the first silicon nitride film and the second silicon nitride film are formed is polished by a chemical mechanical polishing method to expose the upper surface of the gap-filled pattern (P) with the silicon nitride film.

[0065] In addition, this step may further include a step (S240) of forming a hard mask layer on top of a gap-filled pattern (P) with a silicon nitride film after performing the polishing step (S230).

[0066] And, the method may further include a step (S250) of etching a substrate containing silicon oxide, etc., after forming the hard mask layer.

[0067] Afterwards, in the step (S260) of forming a silicon through-electrode, a silicon through-electrode (through silicon via, TSV) is formed on the etched substrate (10).

[0068] The gap-filling method for a semiconductor device according to the embodiment described above utilizes an in-situ process in which a first silicon nitride film (110) is deposited on the surface of a pattern by forming a pulsed plasma and a second silicon nitride film (130) is deposited on the upper surface of the first silicon nitride film (110) by forming a continuous plasma, thereby allowing the gap-filling of a stepped pattern using a single piece of equipment, which can improve productivity and prevent the occurrence of defects such as seams and voids, thereby enabling the manufacture of a semiconductor device with excellent electrical characteristics.

[0069] In particular, in the case of the conventional method of gap-filling a pattern with a silicon nitride film using atomic layer deposition and forming an overburden layer using chemical vapor deposition, the process time takes more than 30 minutes, but if the gap-filling method of the semiconductor device according to the embodiment is used, the process time can be shortened to within 10 minutes, so a significant improvement in productivity can be expected.

[0070] The present invention will be explained in more detail below with reference to examples.

[0071] The presented embodiments are merely specific examples of the invention and are not intended to limit the technical scope of the invention.

[0072] <실시예>

[0073] A substrate having multiple patterns formed thereon with a height of 61.9 nm and a width of 82.5 nm was prepared, and the substrate was placed in a process chamber.

[0074] Silane (SiH4) gas and nitrogen (N2) gas were supplied as process gases, respectively, and a VHF power supply of 27.12 MHz frequency was applied at a duty cycle of 50% to form a pulse wave plasma, and a first silicon nitride film was deposited on the surface of the pattern using the PECVD method to gap-fill a portion of the pattern.

[0075] Next, silane (SiH4) gas and nitrogen (N2) gas were supplied as process gases, respectively, and a VHF power source with a frequency of 27.12 MHz was applied to form a continuous wave plasma, and a second silicon nitride film in the form of an overburden was deposited on the surface of the first silicon nitride film by the PECVD method.

[0076] <비교예 1>

[0077] A substrate having multiple patterns formed thereon with a height of 48.8 nm and a width of 53.7 nm was prepared, and the substrate was placed in a process chamber.

[0078] Silane (SiH4) gas and nitrogen (N2) gas were supplied as process gases, respectively, and a pulse wave plasma was formed by applying an HF power source of 13.56 MHz frequency with a duty cycle of 50% to deposit a first silicon nitride film on the surface of the pattern using the PECVD method to gap-fill a portion of the pattern.

[0079] Next, silane (SiH4) gas and nitrogen (N2) gas were supplied as process gases, respectively, and a 13.56 MHz HF power source was applied to form a continuous wave plasma, and a second silicon nitride film in the form of an overburden was deposited on the surface of the first silicon nitride film by the PECVD method.

[0080] <비교예 2>

[0081] A substrate having multiple patterns formed thereon with a height of 33.8 nm and a width of 45.0 nm was prepared, and the substrate was placed in a process chamber.

[0082] Silane (SiH4) gas and nitrogen (N2) gas were supplied as process gases, respectively, and a continuous wave plasma was formed by applying an HF power source with a frequency of 13.56 MHz to gap-fill the pattern using the PECVD method and form an overburdened silicon nitride film.

[0083] <실험예>

[0084] The occurrence of defects in the gap-filled pattern was evaluated according to the methods of the Example, Comparative Example 1 and Comparative Example 2, and the results are shown in FIG. 5.

[0085] As shown in FIG. 5(a), in the gap-fill sample in which a first silicon nitride film was formed with pulsed plasma and a second silicon nitride film was formed with continuous plasma according to the embodiment, no defects such as voids or seams were found in the silicon nitride film gap-filled inside the pattern.

[0086] On the other hand, as shown in FIG. 5(b) and FIG. 5(c), it was confirmed that voids were formed in the gap-filled silicon nitride film within the pattern in both gap-filled samples formed by the methods according to Comparative Example 1 and Comparative Example 2. In particular, compared to the case where a continuous wave plasma is formed by applying an HF power source as in Comparative Example 2, it was confirmed that the size of the defects was significantly reduced when a first silicon nitride film was deposited by applying an HF power source to form a pulsed plasma as in Comparative Example 1, followed by the deposition of a second silicon nitride film by forming a continuous wave plasma. This confirmed that gap-fill characteristics can be improved when using pulsed plasma. Explanation of the symbols

[0087] 10: Substrate 110: First silicon nitride film 130: Second silicon nitride film 200: Substrate processing device 210: Process chamber 211: Chamber body 213: Top Lead 215: Gate 217: Exhaust port 219: Pump 220: Gas injection unit 230: Substrate support unit 231: Seating plate 233: Support 235: Heater 240: Plasma power supply 250: Gas supply unit P: Pattern

Claims

Claim 1 A gap-filling method for a semiconductor device using a substrate processing apparatus comprising: a process chamber having a processing space formed for thin film deposition; a substrate support member located inside the processing space and on which a substrate is placed; a gas injection member located above the substrate support member and for injecting gas onto the substrate; and a plasma power supply member for supplying power to at least one of the substrate support member and the gas injection member to generate plasma in the processing space, the method comprising: a step of preparing a substrate having a pattern formed thereon; a step of supplying a process gas onto the substrate and applying a first VHF power source to form a pulse wave plasma to form a first silicon nitride film on the pattern; and a step of supplying the process gas onto the substrate and applying a second VHF power source to form a continuous wave plasma to form a second silicon nitride film on the first silicon nitride film. Claim 2 A gap-filling method for a semiconductor device according to claim 1, characterized in that the first silicon nitride film and the second silicon nitride film have different thicknesses from each other, and the thickness of the first silicon nitride film is thinner than the thickness of the second silicon nitride film. Claim 3 A gap-filling method for a semiconductor device according to claim 1, characterized in that the pulsed plasma has a duty ratio of 20 to 80%. Claim 4 A gap-filling method for a semiconductor device according to claim 1, characterized in that the first VHF power source and the second VHF power source each have a frequency of 27.12 MHz. Claim 5 A gap-filling method for a semiconductor device according to claim 1, characterized in that the first VHF power source and the second VHF power source each have different frequencies. Claim 6 A gap-filling method for a semiconductor device according to claim 1, characterized in that the pattern has a critical dimension (CD) of 10 to 1,000 nm. Claim 7 A gap-filling method for a semiconductor device according to claim 1, characterized in that the pattern has an aspect ratio (AR) of 1 or less. Claim 8 In claim 1, the process gas is monosilane (SiH4), disilane (Si2H6), trisilane (Si3H8), tetrasilane (Si4H 10 ), isotetrasilane, neopentasilan (Si5H 12 ), cyclopentasilan (Si5H 10 ), hexasilane (Si6H 14 ), cyclohexasilane (Si6H 12 A gap-filling method for a semiconductor device characterized by comprising a silicon source gas comprising at least one of a silicon precursor, an organosilicon precursor compound, an alkyl silane, and an amino silane. Claim 9 A gap-filling method for a semiconductor device according to claim 1, wherein the process gas comprises a nitrogen-containing gas including at least one of nitrogen (N2) gas, nitrogen dioxide (NO2) gas, nitrous oxide (N2O) gas, nitric oxide (NO) gas, and ammonia (NH3) gas. Claim 10 A method for manufacturing a semiconductor device comprising: a step of preparing a substrate having a pattern formed thereon; a step of gap-filling the pattern by forming a first silicon nitride layer and a second silicon nitride layer, respectively, on top of the pattern using a gap-filling method of any one of claims 1 to 9 of a semiconductor device; a step of polishing the substrate on which the first silicon nitride layer and the second silicon nitride layer are formed using a chemical mechanical polishing method; a step of forming a hard mask layer on top of the polished pattern; a step of etching the substrate on which the hard mask layer is formed; and a step of forming a silicon through-electrode on the etched substrate.

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