Process kits and related methods for processing chambers to enable deposition process control functions

Abstract

The present disclosure relates to flow guides, process kits, and related methods for processing chambers for enabling deposition process control functions. In one embodiment, the flow guide comprises an intermediate plate having a first side and a second side facing the first side along a first direction. The first side and the second side are arched. The flow guide comprises a first flange extending outwardly to a third side of the intermediate plate and outwardly to an outer face of the intermediate plate, and a second flange extending outwardly to a fourth side of the intermediate plate and outwardly to an outer face of the intermediate plate. The fourth side faces the third side along a second direction intersecting the first direction. The flow guide comprises a rectangular flow opening defined between the first flange and the second flange.

Description

Technology Field

[0001] The present disclosure relates to process kits for processing chambers and related methods for enabling adjustable deposition processes. Background Technology

[0002] Semiconductor substrates are processed for a wide variety of applications, including the manufacturing of integrated devices and microdevices. During processing, various parameters can affect the uniformity of the material deposited on the substrate. For example, the temperature of the substrate and / or the temperature(s) of the processing chamber components can affect deposition uniformity.

[0003] Adjusting parameters (such as gas flow rates and gas pressures) for deposition uniformity can be difficult. If substrate rotation is used, it can exacerbate these adjustment difficulties. Relatively low rotation speeds, high pressures, and low flow rates can also worsen these adjustment difficulties. Furthermore, cleaning the components of the processing chambers can be difficult.

[0004] Therefore, there is a need for improved process kits and related methods that enable adjusting process parameters, such as low rotational speeds, high pressures, and low flow rates, and cleaning processing chamber components.

[0005] The present disclosure relates to flow guides, process kits, and related methods for processing chambers to enable the adjustment of a deposition process. One or more process gases flow over a substrate to form one or more layers on the substrate and flow through a rectangular flow opening. In one or more embodiments, the rectangular flow opening is defined between a first planar inner face of a first flange and a second planar inner face of a second flange. In one or more embodiments, the flow guide includes one or more openings that can be closed and opened to allow one or more cleaning gases to flow into an internal volume at least partially defined by a window.

[0006] In one embodiment, a process kit for placement in a processing chamber applicable for use in semiconductor manufacturing includes a flow guide. The flow guide includes an intermediate plate having a first side and a second side facing the first side along a first direction. The first side and the second side are arched. The flow guide includes a first flange extending outwardly to a third side of the intermediate plate and outwardly to an outer face of the intermediate plate, and a second flange extending outwardly to a fourth side of the intermediate plate and outwardly to an outer face of the intermediate plate. The fourth side faces the third side along a second direction intersecting the first direction. The flow guide includes a rectangular flow opening defined between a first planar inner face of the first flange and a second planar inner face of the second flange.

[0007] In one embodiment, a processing chamber applicable for use in semiconductor manufacturing comprises a window that at least partially defines an internal volume, a plurality of ramps, and a substrate support disposed in the internal volume. The substrate support comprises a support surface. The processing chamber comprises a process kit disposed in the internal volume. The process kit comprises a flow guide. The flow guide comprises an intermediate plate disposed between the support surface and the plurality of ramps. The intermediate plate has a first side and a second side facing the first side along a first direction. The first side and the second side are arched. The process kit comprises a first flange extending outwardly to a third side of the intermediate plate and outwardly to an outer surface of the intermediate plate, and a second flange extending outwardly to a fourth side of the intermediate plate and outwardly to an outer surface of the intermediate plate. The fourth side faces the third side along a second direction intersecting the first direction. The flow guide comprises a rectangular flow opening defined between a first planar inner surface of the first flange and a second planar inner surface of the second flange.

[0008] In one embodiment, a method for processing substrates comprises the steps of heating a substrate positioned on a substrate support, and flowing one or more process gases over the substrate to form one or more layers on the substrate. The step of flowing one or more process gases over the substrate includes guiding one or more process gases through a rectangular flow opening of a process kit. The method includes the step of lifting at least a portion of the process kit to open one or more first openings and one or more second openings. The method includes the steps of flowing one or more cleaning gases through one or more first openings and into a zone between a flow guide and a window, and flowing one or more cleaning gases through the zone and into one or more second openings.

[0009] In one embodiment, a flow guide applicable for use in semiconductor manufacturing comprises a plate having a first surface and a second surface opposite to the first surface. The flow guide comprises a first set of fins extending from the second surface and a second set of fins extending from the second surface. The second set of fins is spaced apart from the first set of fins to define a flow path between the first set of fins and the second set of fins. The flow path has a serpentine pattern between the first set of fins and the second set of fins.

[0010] In one embodiment, a flow guide applicable for use in semiconductor manufacturing comprises a plate having a first surface and a second surface opposite to the first surface. The flow guide comprises a first set of pins extending from the second surface. The first set of pins has a plurality of first pins spaced apart from each other to define a first set of flow paths. The flow guide comprises a second set of pins extending from the second surface. The second set of pins has a plurality of second pins spaced apart from each other to define a second set of flow paths. The flow guide comprises a central flow path between a first inner pin of the first set of pins and a second inner pin of the second set of pins.

[0011] In one embodiment, a method for processing substrates comprises the steps of heating a substrate positioned on a substrate support, and flowing one or more process gases over the substrate to form one or more layers on the substrate. The step of flowing one or more process gases over the substrate comprises the step of guiding one or more process gases through one or more flow paths at least partially defined by a plurality of pins extending from a plate of a flow guide. The method comprises the step of moving the plate to adjust the distance between the plurality of pins and the substrate.

[0012] In one embodiment, a process kit for placement in a processing chamber applicable for use in semiconductor manufacturing comprises a plate having a first surface and a second surface opposite to the first surface. The process kit comprises a liner. The liner comprises an annular section and one or more ledges extending inwardly with respect to the annular section. The one or more ledges are configured to support one or more outer regions of the second surface of the plate. The liner comprises one or more inlet openings extending to an inner surface of the annular section on the first side of the liner, and one or more outlet openings extending to an inner surface of the annular section on the second side of the liner.

[0013] In one embodiment, a processing chamber applicable for use in semiconductor manufacturing comprises an internal volume, a plurality of ramps, and a substrate support disposed in the internal volume. The substrate support comprises a support surface. The processing chamber comprises a window that at least partially defines the internal volume. The window comprises a first surface that is concave or flat and a second surface that is convex, wherein the second surface faces the substrate support.

[0014] In one embodiment, a method for processing substrates comprises the steps of heating a substrate positioned on a substrate support within a chamber, and flowing one or more process gases over the substrate to form one or more layers on the substrate. The step of flowing one or more process gases over the substrate includes the step of guiding one or more process gases between a plate and the substrate. The plate is supported on a liner to divide the processing volume into a lower portion and an upper portion. The method comprises the steps of exhausting one or more process gases, and flowing one or more cleaning gases through the upper portion while the plate is supported on the liner. The upper portion is between the plate and the window. The method includes the step of exhausting one or more cleaning gases. Brief explanation of the drawing

[0015] In a manner that the features of the above-mentioned disclosure can be understood in detail, a more specific description of the disclosure briefly summarized above may be made with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings are only illustrative of exemplary embodiments and should not be construed as limiting the scope of the disclosure, and the disclosure may allow for other equally valid embodiments.

[0016] FIG. 1 is a schematic cross-sectional view of a processing chamber according to one implementation.

[0017] FIG. 2 is a schematic block diagram of a control system for use in a processing chamber illustrated in FIG. 1, according to one implementation.

[0018] FIG. 3 is a schematic partial side cross-sectional view of a processing chamber having a process kit of a processing position according to one implementation.

[0019] FIG. 4 is a schematic partial side view of a processing chamber having a process kit (shown in FIG. 3) in a cleaning position according to one implementation.

[0020] FIG. 5 is a schematic partial perspective view of the process kit illustrated in FIG. 3 and FIG. 4 according to one implementation.

[0021] Figure 6 is a schematic graphic of a graph plotting temperature versus x-position according to one implementation.

[0022] FIG. 7 is a schematic partial side cross-sectional view of a processing chamber having a process kit of a processing position according to one implementation.

[0023] FIG. 8 is a schematic partial side view of a processing chamber having a process kit (shown in FIG. 7) in a cleaning position according to one implementation.

[0024] FIG. 9 is a schematic partial side cross-sectional view of an upper liner according to one implementation.

[0025] FIG. 10 is a schematic plan view of a process kit according to one implementation.

[0026] FIG. 11 is a schematic side view of the lock extensions illustrated in FIG. 10 according to one implementation.

[0027] FIG. 12 is a schematic top plan view of the spatial configuration of a process kit placed in a processing chamber according to one implementation.

[0028] FIG. 13 is a schematic partial side cross-sectional view of a processing chamber having a process kit of a processing position according to one implementation.

[0029] FIG. 14 is an enlarged cross-sectional view of the processing chamber illustrated in FIG. 13 according to one implementation.

[0030] FIG. 15 is a schematic partial side view of a processing chamber having a process kit (shown in FIG. 13) in a cleaning position according to one implementation.

[0031] FIG. 16 is an enlarged cross-sectional view of the processing chamber illustrated in FIG. 15 according to one implementation.

[0032] FIG. 17 is a schematic plan view of the flow guide and cover illustrated in FIG. 13 according to one implementation.

[0033] FIG. 18 is a schematic bottom view of the flow guide and cover illustrated in FIG. 13 according to one implementation.

[0034] FIG. 19 is a schematic plan view of the flow guide illustrated in FIG. 13 according to one implementation.

[0035] FIG. 20 is a schematic perspective view of the lowermost part of the flow guide illustrated in FIG. 13 according to one implementation.

[0036] FIG. 21 is a schematic plan view of the cover illustrated in FIG. 13 according to one implementation.

[0037] FIG. 22 is a schematic perspective view of the lowest part of the cover shown in FIG. 13 according to one implementation.

[0038] FIG. 23 is a schematic partial side cross-sectional view of a processing chamber having a process kit of a processing position according to one implementation.

[0039] FIG. 24 is a schematic partial side view of a processing chamber having a process kit (shown in FIG. 23) in a cleaning position according to one implementation.

[0040] FIG. 25 is a schematic plan view of the process kit shown in FIG. 23 and FIG. 24 according to one implementation.

[0041] FIG. 26 is a schematic plan view of the process kit shown in FIG. 23 and FIG. 24 according to one implementation.

[0042] FIG. 27 is a schematic plan view of the process kit shown in FIG. 23 and FIG. 24 according to one implementation.

[0043] FIG. 28 is a schematic plan view of the process kit shown in FIG. 23 and FIG. 24 according to one implementation.

[0044] FIG. 29 is a schematic perspective view of the inner surface of the intermediate plate shown in FIG. 26 according to one implementation.

[0045] FIG. 30 is a schematic side cross-sectional view of the intermediate plate shown in FIG. 29 according to one implementation.

[0046] FIG. 31 is a schematic side cross-sectional view of the intermediate plate shown in FIG. 29 according to one implementation.

[0047] FIG. 32 is a schematic side cross-sectional view of the intermediate plate shown in FIG. 29 according to one implementation.

[0048] FIG. 33 is a schematic side view of the intermediate plate shown in FIG. 26 according to one implementation.

[0049] FIG. 34 is a schematic block diagram of a method for processing substrates according to one implementation.

[0050] FIG. 35 is a schematic partial side view of a processing chamber having a process kit according to one implementation.

[0051] FIG. 36 is a schematic perspective view of the process kit illustrated in FIG. 35 according to one implementation.

[0052] FIG. 37 is a schematic partial side view of the processing chamber shown in FIG. 35 according to one implementation.

[0053] FIG. 38 is a schematic partial plan view of the plate, flow module, and liner shown in FIG. 35 and FIG. 37 according to one implementation.

[0054] FIG. 39 is a schematic block diagram of a method for processing substrates according to one implementation.

[0055] FIG. 40 is a schematic partial cross-sectional view of a processing chamber according to one implementation.

[0056] FIG. 41 is a schematic enlarged view of the window shown in FIG. 40 according to one implementation.

[0057] FIG. 42 is a schematic plan view of a flow guide according to one implementation.

[0058] FIG. 43 is a schematic plan view of a flow guide according to one implementation.

[0059] FIG. 44 is a schematic bottom perspective view of the flow guide illustrated in FIG. 42 according to one implementation.

[0060] FIG. 45 is a schematic partial side view of the flow guide illustrated in FIG. 43 according to one implementation.

[0061] FIG. 46 is a schematic partial side view of the flow guide illustrated in FIG. 43 according to one implementation.

[0062] FIG. 47 is a schematic plan view of the flow guide illustrated in FIG. 42 according to one implementation.

[0063] FIG. 48 is a schematic plan view of a flow guide according to one implementation.

[0064] FIG. 49 is a schematic partial side view of the flow guide shown in FIG. 42 inside the processing chamber during the lowering state according to one implementation.

[0065] FIG. 50 is a schematic partial side view of the flow guide shown in FIG. 49 during the rising state according to one implementation.

[0066] FIG. 51 is a schematic partial side view of the flow guide shown in FIG. 49 in a tilted position according to one implementation.

[0067] FIG. 52 is a schematic partial side view of the flow guide shown in FIG. 49 in a tilted position according to one implementation.

[0068] FIG. 53 is a schematic block diagram of a method for processing substrates according to one implementation.

[0069] For ease of understanding, the same reference numbers have been used where possible to designate identical elements common to the drawings. It is considered that the elements and features of one embodiment may be beneficially incorporated into other embodiments without further mention. Specific details for implementing the invention

[0070] The present disclosure relates to process kits and related methods for processing chambers for enabling a deposition process control function. One or more process gases flow over a substrate to form one or more layers on the substrate and flow through a rectangular flow opening. In one or more embodiments, the rectangular flow opening is defined between a first planar inner face of a first flange and a second planar inner face of a second flange. In one or more embodiments, the flow guide includes one or more openings that can be closed and opened to allow one or more cleaning gases to flow into an internal volume at least partially defined by a window.

[0071] FIG. 1 is a schematic side cross-sectional view of a processing chamber (100) according to one embodiment. The processing chamber (100) is a deposition chamber. In one embodiment that may be combined with other embodiments, the processing chamber (100) is an epitaxial deposition chamber. The processing chamber (100) is used to grow an epitaxial film on a substrate (102). The processing chamber (100) generates a cross-flow of precursors across the top surface (150) of the substrate (102).

[0072] The processing chamber (100) comprises an upper body (156), a lower body (148) disposed below the upper body (156), and a flow module (112) disposed between the upper body (156) and the lower body (148). The upper body (156), the flow module (112), and the lower body (148) form a chamber body. A substrate support (106), an upper window (108) (e.g., an upper dome), a lower window (110) (e.g., a lower dome), a plurality of upper lamps (141), and a plurality of lower lamps (143) are disposed within the chamber body. As illustrated, a controller (120) communicates with the processing chamber (100) and is used to control the operations of processes and methods, such as the methods described herein.

[0073] A substrate support (106) is positioned between an upper window (108) and a lower window (110). The substrate support (106) includes a support surface (123) that supports the substrate (102). A plurality of upper lamps (141) are positioned between an upper window and a cover (154). The plurality of upper lamps (141) form part of an upper lamp module (155). The cover (154) may include a plurality of sensors (not shown) positioned within the cover (154) to measure the temperature within the processing chamber (100). A plurality of lower lamps (143) are positioned between a lower window (110) and a floor (152). The plurality of lower lamps (143) form part of a lower lamp module (145). The upper window (108) is an upper dome and is formed of an energy-transmitting material, such as quartz. The lower window (110) is a lower dome and is formed of an energy-transmitting material, such as quartz.

[0074] The process volume (136) and the fuzzy volume (138) are formed between the upper window (108) and the lower window (110). The process volume (136) and the fuzzy volume (138) are part of an internal volume defined at least partially by the upper window (108), the lower window (110), and one or more liners (163).

[0075] The internal volume has a substrate support (106) disposed therein. The substrate support (106) includes an upper surface on which a substrate (102) is disposed. The substrate support (106) is attached to a shaft (118). The shaft (118) is connected to a motion assembly (121). The motion assembly (121) includes one or more actuators and / or adjustment devices that provide movement and / or adjustment of the shaft (118) and / or the substrate support (106) within the processing volume (136).

[0076] The substrate support (106) may include lift pin holes (107) disposed therein. The lift pin holes (107) are sized to accommodate lift pins (132) for lifting the substrate (102) from the substrate support (106) before or after the deposition process is performed. The lift pins (132) may be placed on lift pin stops (134) when the substrate support (106) is lowered from the process position to the transfer position.

[0077] The flow module (112) includes a plurality of gas inlets (114), a plurality of purge gas inlets (164), and one or more gas exhaust outlets (116). The plurality of gas inlets (114) and the plurality of purge gas inlets (164) are positioned on the opposite side of the flow module (112) from the one or more gas exhaust outlets (116). One or more flow guides (117a, 117b) are positioned below the plurality of gas inlets (114) and one or more gas exhaust outlets (116). One or more flow guides (117a, 117b) are positioned above the purge gas inlets (164). One or more liners (163) are positioned on the inner surface of the flow module (112) and protect the flow module (112) from reactive gases used during deposition operations and / or cleaning operations. Gas inlet(s) (114) and purge gas inlet(s) (164) are each positioned to flow gas parallel to the top surface (150) of the substrate (102) placed within the process volume (136). The gas inlet(s) (114) are fluidly connected to one or more process gas sources (151) and one or more cleaning gas sources (153). The purge gas inlet(s) (164) are fluidly connected to one or more purge gas sources (162). One or more gas exhaust outlets (116) are fluidly connected to an exhaust pump (157). One or more process gases supplied using one or more process gas sources (151) may include one or more reactive gases (e.g., one or more of silicon (Si), phosphorus (P), and / or germanium (Ge)) and / or one or more carrier gases (e.g., one or more of nitrogen (N2) and / or hydrogen (H2). One or more purge gases supplied using one or more purge gas sources (162) may include one or more inert gases (e.g., one or more of argon (Ar), helium (He), and / or nitrogen (N2)).One or more cleaning gases supplied using one or more cleaning gas sources (153) may include one or more of hydrogen (H) and / or chlorine (Cl). In one embodiment that may be combined with other embodiments, one or more process gases include silicon phosphide (SiP) and / or phosphine (PH3), and one or more cleaning gases include hydrochloric acid (HCl).

[0078] One or more gas exhaust outlets (116) are additionally connected to or include an exhaust system (178). The exhaust system (178) fluidly connects one or more gas exhaust outlets (116) and an exhaust pump (157). The exhaust system (178) can assist in the controlled deposition of a layer on the substrate (102). The exhaust system (178) is positioned on the side of the processing chamber (100) opposite to the flow module (112).

[0079] FIG. 2 is a schematic block diagram of a control system (200) for use within a processing chamber (100) illustrated in FIG. 1 according to one implementation. The controller (120) is configured to receive data or input as sensor readings (202) from a plurality of sensors. The sensors may include, for example, sensors for monitoring the growth of layer(s) on a substrate (102) and / or sensors for monitoring the growth of residues on the inner surfaces of chamber components of the processing chamber (100) (e.g., the inner surfaces of the upper window (108) and one or more liners (163)). The controller (120) is equipped with or communicates with a system model (206) of the processing chamber (100). The system model (206) includes a heating model, a rotational position model, and a gas flow model. The system model (206) is a program configured to estimate parameters (e.g., gas flow rate, gas pressure, rotational position of component(s), and heating profile) within the processing chamber (100) throughout the deposition operation and / or cleaning operation. The controller (120) is further configured to store readings and calculations (204).

[0080] The readings and calculations (204) include previous sensor readings (202), such as any previous sensor readings within the processing chamber (100). The readings and calculations (204) further include stored calculated values ​​from the time the sensor readings (202) were measured by the controller (120) and executed through the system model (206). Accordingly, the controller (120) is configured not only to retrieve the stored readings and calculations (204) but also to store the readings and calculations (204) for future use. Retaining the previous readings and calculations allows the controller (120) to adjust the system model (206) over time to reflect a more accurate version of the processing chamber (100).

[0081] The controller (120) includes a central processing unit (CPU), memory containing instructions, and support circuitry for the CPU. The controller (120) controls various items directly or through other computers and / or controllers. In one or more embodiments, the controller (120) is communically coupled to dedicated controllers, and the controller (120) functions as a central controller.

[0082] The controller (120) is any type of general-purpose computer processor used in industrial settings to control various substrate processing chambers and equipment, and sub-processors on or within them. The memory or non-transient computer-readable medium is one or more of readily available memory, such as RAM (random access memory), DRAM (dynamic random access memory), SRAM (static RAM), and SDRAM (synchronous dynamic RAM (e.g., DDR1, DDR2, DDR3, DDR3L, LPDDR3, DDR4, LPDDR4, etc.)), ROM (read-only memory), floppy disk, hard disk, flash drive, or any other form of local or remote digital storage. Support circuits of the controller (120) are coupled to the CPU to support the CPU (processor). Support circuits include caches, power supplies, clock circuits, input / output circuits, and subsystems, etc. Operation parameters (pressure for the process gas, flow rate for the process gas, and / or rotational position of the process kit) and operations are stored in memory as software routines that are executed or called to switch the controller (120) to a specific purpose controller for controlling the operations of the various chambers / modules described herein. The controller (120) is configured to perform any of the operations described herein. The commands stored in memory, when executed, cause one or more of the operations of the method (3400) (described below) to be performed.

[0083] The various operations described in this specification (e.g., operations of method (3400)) may be performed automatically using a controller (120), or may be performed automatically or manually using specific operations performed by a user.

[0084] In one or more embodiments, the controller (120) includes a mass storage device, an input control unit, and a display unit (not shown). The controller (120) monitors the process gas and purge gas flow. In one or more embodiments, the controller (120) includes a plurality of controllers (120), and the stored readings and calculations (204) and the system model (206) are stored in a controller separate from the controller (120) that operates the processing chamber (100). In one or more embodiments, both the system model (206) and the stored readings and calculations (204) are stored in the controller (120).

[0085] The controller (120) is configured to control the rotational position, heating, and gas flow through the processing chamber (100) by providing outputs for the lamps, gas flow, and motion assembly (121) to the control units (208). The control units (208) include control units for the upper lamps (141), lower lamps (143), process gas source (151), purge gas source (162), motion assembly (121), and exhaust pump (157).

[0086] The controller (120) is configured to adjust the output to the control units (208) based on sensor readings (202), a system model (206), and stored readings and calculations (204). The controller (120) includes built-in software and a compensation algorithm for calibrating the measurements. The controller (120) may include one or more machine learning algorithms and / or artificial intelligence algorithms for estimating optimized parameters for deposition operations and / or cleaning operations. One or more machine learning algorithms and / or artificial intelligence algorithms may use, for example, a regression model (e.g., a linear regression model) or a clustering technique to estimate the optimized parameters. The algorithms may be unsupervised or supervised.

[0087] FIG. 3 is a schematic partial side view of a processing chamber (300) having a process kit (310) of a processing position according to one implementation. The processing chamber (300) is similar to the processing chamber (100) shown in FIG. 1 and includes one or more of its aspects, features, components, attributes, and / or operations.

[0088] A process kit (310) is placed in the process volume (136) of the internal volume of the processing chamber (300). The process kit (310) includes a flow guide (320). The flow guide (320) includes an intermediate plate (321) placed between the support surface (123) and the upper ramps (141). One flange (331) of the process kit (310) (described below) is shown in FIG. 3. The processing chamber (300) includes a lower liner (311) at least partially aligned below the substrate support (106) and an upper liner (312) at least partially aligned above the substrate support (106). A preheating ring (302) is placed on the outside of the substrate support (106). The preheating ring (302) is supported on the reticle of the lower liner (311). The stopper (304) includes a plurality of arms (305a, 305b), each including a lift pin stopper on which the lift pins (132) can be placed when lowered.

[0089] In the processing position illustrated in FIG. 3, the process kit (310) is in the lower position. In the processing position, the intermediate plate (321) is supported (e.g., placed) on the reg (313) of the upper liner (312). In the processing position, the intermediate plate (321) effectively seals the lower portion (136a) of the processing volume (136) from the upper portion (136b) of the processing volume (136). In one embodiment that can be combined with other embodiments, the flanges (331, 332) (described below) are partially supported on the substrate support (106) and partially supported on the preheating ring (302) in the processing position. In such an embodiment, the rise of the substrate support (106) can lift the process kit (310) away from the preheating ring (302).

[0090] While the lamps (141, 143) heat the preheating ring (302) and the substrate (102), one or more process gases (P1) flow from the process gas inlets into the lower portion (136a) and over the substrate (102) to form one or more layers on the substrate (102) (e.g., epitaxial growth). After flowing over the substrate (102), the one or more process gases (P1) flow out of the internal volume through one or more gas exhaust outlets (116).

[0091] FIG. 4 is a schematic partial side view of a processing chamber (300) having a process kit (310) of a cleaning position (shown in FIG. 3) according to one implementation. In FIG. 4, the cleaning position is an elevated position relative to the processing position shown in FIG. 3.

[0092] In the cleaning position of FIG. 4, the substrate (102) is removed from the internal volume of the processing chamber (300). By using the raising of the substrate support (106), the process kit (310) is raised so that the intermediate plate (321) is raised in a certain gap from the reg (313) of the upper liner (312) on both the first side (322) and the second side (323). Gaps in this specification may also be referred to as openings. One or more cleaning gases (C1) are supplied into the processing volume (136) through the gas inlets (114). At least a portion of the one or more cleaning gases (C1) flows through the gap between the intermediate plate (321) and the reg (313) and into the upper portion (136b). One or more cleaning gases (C1) flowing into the upper portion (136b) enable cleaning of the internal surfaces of the processing chamber (300), such as the internal surfaces of the upper liner (312) and the upper window (108), and the surface of the intermediate plate (321) facing the upper window (108). One or more cleaning gases (C1) clean the space between the intermediate plate (321) and the upper window (108) (e.g., the upper portion (136b)). One or more cleaning gases (C1) flow out of the internal volume through the upper portion (136b), through the gap on the opposite side of the processing chamber (300), and through one or more gas exhaust outlets (116).

[0093] FIG. 5 is a schematic partial perspective view of the process kit (310) shown in FIG. 3 and FIG. 4 according to one implementation.

[0094] The intermediate plate (321) has a first side (322) (adjacent to the gas inlets (114) of FIG. 3 and 4) and a second side (323) facing the first side (322) along the first direction (D1). Each of the first side (322) and the second side (323) is arched.

[0095] The process kit (310) includes a first flange (331) extending outwardly toward the third side (324) of the intermediate plate (321) and outwardly toward the outer surface (345) of the intermediate plate (321), and a second flange (332) extending outwardly toward the fourth side (325) of the intermediate plate (321) and outwardly toward the outer surface (345) of the intermediate plate (321). The fourth side (325) faces the third side (324) along a second direction (D2) that intersects the first direction (D1). In one or more embodiments, the second direction (D2) is perpendicular to the first direction (D1). The third surface (324) and the fourth surface (325) are linear. In FIGS. 3 and 4, the first and second flanges (331, 332) are at least partially supported on the substrate support (106) so that the raising and lowering of the substrate support (106) causes the process kit (310) to be raised and lowered. A rectangular flow opening (350) is defined between the first planar inner surface (333) of the first flange (331) and the second planar inner surface (334) of the second flange (332). Each of the first flange (331) and the second flange (332) has a semicircular shape. In one embodiment that can be combined with other embodiments, the intermediate plate (231) is formed of quartz, and the first and second flanges (331, 332) are each formed of silicon carbide (SiC). The rectangular flow opening (350) has a 3-D rectangular box shape such that the rectangular flow opening (350) has a rectangular shape in the XY plane, XZ plane, and YZ plane, respectively. When the process kit (310) is in the processing position, the rectangular flow opening (350) is defined by one or more of the first planar inner surface (333), the second planar inner surface (334), the upper surface of the substrate (102), the upper surface of the substrate support (106), and / or the upper surface of the preheating ring (302).

[0096] One or more process gases (P1) flow through the rectangular flow opening (350) when flowing through the lower portion (136a) and over the substrate (102). The rectangular flow opening (350) enables the regulation of process gases and cleaning gases (e.g., pressure and flow rate) to enable process uniformity and deposition uniformity while providing a path for cleaning gases to the upper portion (136b). As an example, the rectangular flow opening (350) enables the use of high pressures and low flow rates for process gases and cleaning gases. The rectangular flow opening (350) also enables the mitigation of the effects that rotation of the substrate (102) has on process uniformity and film thickness uniformity during the deposition operation. As an example, the rectangular flow opening mitigates or eliminates the effects of gas vortices.

[0097] FIG. 6 is a schematic graphic of a graph (600) plotting temperature versus x-position according to one implementation. The temperature represents the temperature of the substrate support (106) taken at various x-positions. The x-positions are taken along the diameter of the substrate support (106).

[0098] In the case of the first profile (601), the process kit (310) was not included in the processing chamber. In the case of the second profile (602), the process kit (310) was included in the processing chamber. As illustrated by the second profile (602), to enable the use of lower power levels for the thermal lamps, the mitigated effects of substrate rotation and process uniformity exhibit higher temperatures for the substrate support (106). Using lower power levels enables reduced costs and operational efficiencies.

[0099] FIG. 7 is a schematic partial side cross-sectional view of a processing chamber (700) having a process kit (310) of a processing position according to one implementation. The processing chamber (700) is similar to the processing chamber (300) shown in FIG. 3 and includes one or more of its aspects, features, components, attributes, and / or operations.

[0100] In FIG. 7, the processing position is an elevated position. The processing chamber (700) includes an upper liner (712). The upper liner (712) is similar to the upper liner (312) shown in FIG. 3 and includes one or more of its aspects, features, components, attributes, and / or operations.

[0101] The leg (313) is omitted from the upper liner (712) so that the intermediate plate (321) can descend downward past the upper liner (712). The intermediate plate (321) floats freely relative to the upper liner (712).

[0102] FIG. 8 is a schematic partial side view of a processing chamber (700) having a process kit (310) of a cleaning position (shown in FIG. 7) according to one implementation. In FIG. 8, the cleaning position is a lowered position relative to the processing position shown in FIG. 7.

[0103] In the cleaning position of FIG. 4, the substrate (102) is removed from the internal volume of the processing chamber (300). By lowering the substrate support (106), the process kit (310) is lowered so that the intermediate plate (321) is lowered in a certain gap from the upper liner (712). One or more cleaning gases (C1) are supplied into the processing volume (136) through the gas inlets (114). At least a portion of the one or more cleaning gases (C1) flows through the gap between the intermediate plate (321) and the upper liner (712) and into the upper portion (136b).

[0104] FIG. 9 is a schematic partial side view of the upper liner (312) according to one implementation.

[0105] FIG. 10 is a schematic plan view of a process kit (310) according to one embodiment. The process kit (310) includes a plurality of locking extensions (1001) extending outwardly with respect to an intermediate plate (321). The locking extensions (1001) are attached to the intermediate plate (321) or formed integrally with the intermediate plate (321). The locking extensions (1001) extend from first and second sides (322, 323). The present disclosure takes into account that the locking extensions (1001) may extend from the uppermost surface of the intermediate plate (321).

[0106] In the implementation illustrated in FIG. 9, the upper liner (312) includes two levels of inwardly facing locking stop structures (910a, 910b). A set of locking stop structures (910a, 910b) may be included for each locking extension (1001) (as illustrated in FIG. 10). In one embodiment that may be combined with other embodiments, the upper liner (312) includes four sets of locking stop structures (910a, 910b) (as illustrated in FIG. 10). The inward locking stop structures (910b) prevent the process kit (310) from rotating when the process kit (310) is in a lower position by providing stops for the flanges (331, 332).

[0107] Two of the outer lock stop structures (910a) define a first radial boundary and a second radial boundary, and between them, individual lock extensions (1001) can be moved along a rotation path by a rotation angle (A1). The process kit (310) can be rotated by an angle up to a rotation angle (A1) when the process kit is in the upper position so that the flanges (331, 332) (as shown as ghost in FIG. 9) clear the inner lock stop structures (910b). The process kit (310) can be rotated when it is in the raised position before lowering the process kit (310) so that, for example, the intermediate plate (321) is supported on the component (e.g., upper liner (312)). Rotation of the process kit (310) can be used to adjust the orientation of the rectangular flow opening (350) between deposition operations and / or cleaning operations, which enables the adjustment of gases and uniformity of deposition and / or cleaning.

[0108] The inner locking stop structures (910b) and outer locking stop structures (910a) can be placed in individual channels formed on the inner surface of the upper liner (312).

[0109] Each of the first flange (331) and the second flange (332) may include individual protruding sections (335, 336) that interfaceive with the substrate support (106). In one embodiment that may be combined with other embodiments, the substrate support (106) raises the protruding sections (335, 336) to lift the outer sections (337, 338) of the first and second flanges (331, 332) from the preheating ring (302) and interfaces with them.

[0110] FIG. 11 is a schematic side view of the locking extensions (1001) illustrated in FIG. 10 according to one implementation.

[0111] FIG. 12 is a schematic top plan view of the spatial configuration of a process kit (310) placed in a processing chamber (300) according to one implementation.

[0112] The outer diameter (OD1) of the intermediate plate (321) is less than or equal to the inner diameter (ID1) of the upper liner (312). The inner diameter (ID2) between the inner edges of the flanges (331, 332) is smaller than the outer diameter (OD2) of the substrate support (106). The outer diameter (OD3) between the outer edges of the flanges (331, 332) is larger than the inner diameter (ID3) of the preheating ring (302).

[0113] FIG. 13 is a schematic partial side view of a processing chamber (1300) having a process kit (1310) of a processing position according to one implementation.

[0114] FIG. 14 is an enlarged cross-sectional view of the processing chamber (1300) shown in FIG. 13 according to one implementation. The cross-sectional view of FIG. 14 is taken along a different radial angle than the cross-sectional view shown in FIG. 13.

[0115] The processing chamber (1300) is similar to the processing chamber (300) illustrated in FIG. 3 and includes one or more of its aspects, features, components, attributes, and / or operations. The process kit (1310) is similar to the process kit (310) illustrated in FIG. 3 and includes one or more of its aspects, features, components, attributes, and / or operations.

[0116] The process kit (1310) includes a flow guide (1320) and a cover (1350). In FIGS. 13 and 14, the cover (1350) is in a lowered position to effectively seal the upper portion (136b) from the lower portion (136a) of the process volume (136). The reg (313) is omitted from the upper liner (712) so that the intermediate plate (321) can descend downward past the upper liner (712). The intermediate plate (321) floats freely relative to the upper liner (712). The flanges (1331, 1332) (described below) of the flow guide (1320) are supported on the preheating ring (302). The cover (1350) includes protrusions (1354, 1355) (discussed below) that extend into the openings (1325, 1326) (discussed below) of the flow guide (1320).

[0117] Lifting of the substrate support (106) causes the substrate support (106) to engage with the protrusions (1354, 1355) to raise the cover (1350) relative to the flow guide (1320).

[0118] FIG. 15 is a schematic partial side view of a processing chamber (1300) having a process kit (1310) of a cleaning position (shown in FIG. 13) according to one implementation.

[0119] In FIG. 15, the cleaning position is an upward position relative to the processing position shown in FIG. 13.

[0120] FIG. 16 is an enlarged cross-sectional view of the processing chamber (1300) shown in FIG. 15 according to one implementation. The cross-sectional view of FIG. 16 is taken along a different radial angle than the cross-sectional view shown in FIG. 15.

[0121] In FIGS. 15 and 16, the substrate (102) is removed from the processing chamber (1300), and the cover (1350) is lifted to an elevated position to open one or more gaps between the cover (1350) and the flow guide (1320). One or more cleaning gases (C1) flow through one or more gaps, through one or more first openings (1356) of the cover (1350), and into the upper portions (136b) of the process volume (136). The cleaning gases (C1) flow through one or more second openings (1357) of the cover (1350), through one or more gaps between the cover (1350) and the flow guide (1320), and are exhausted from the processing chamber (1300).

[0122] In the cleaning position of FIGS. 15 and 16, the substrate (102) is removed from the internal volume of the processing chamber (300). By lowering the substrate support (106), the process kit (310) is lowered so that the intermediate plate (321) is lowered in a certain gap from the upper liner (712). One or more cleaning gases (C1) are supplied into the processing volume (136) through the gas inlets (114). At least a portion of the one or more cleaning gases (C1) flows through the gap between the intermediate plate (321) and the upper liner (712) and into the upper portion (136b).

[0123] FIG. 17 is a schematic plan view of the flow guide (1320) and cover (1350) shown in FIG. 13 according to one implementation.

[0124] FIG. 18 is a schematic bottom view of the flow guide (1320) and cover (1350) shown in FIG. 13 according to one implementation.

[0125] FIG. 19 is a schematic plan view of the flow guide (1320) illustrated in FIG. 13 according to one implementation.

[0126] FIG. 20 is a schematic perspective view of the lower part of the flow guide (1320) shown in FIG. 13 according to one implementation.

[0127] The flow guide (1320) comprises an intermediate plate (1321) having a first side (1322) and a second side (1323) facing the first side (1322) along a first direction. The first side (1322) and the second side (1323) are arched. The flow guide (1320) comprises a first flange (1331) extending outwardly toward the third side (1327) of the intermediate plate (1321) and outwardly toward the outer surface (1345) of the intermediate plate (1321), and a second flange (1332) extending outwardly toward the fourth side (1328) of the intermediate plate (1321) and outwardly toward the outer surface (1345) of the intermediate plate (1321). The fourth side (1328) faces the third side (1327) along a second direction that intersects the first direction. In one or more embodiments, the second direction is perpendicular to the first direction. A rectangular flow opening (1381) is defined between the first planar inner surface (1333) of the first flange (1331) and the second planar inner surface (1334) of the second flange (1332).

[0128] The flow guide (1320) includes a first edge section (1335) extending between the third side (1327) of the intermediate plate (1321) and the first flange (1331), and a second edge section (1336) extending between the fourth side (1328) of the intermediate plate (1321) and the second flange (1332). Each of the first edge section (1335) and the second edge section (1336) has a rectangular shape. The flow guide (1320) includes a first opening (1325) formed between the first flange (1331) and the first edge section (1335), and a second opening (1326) formed between the second flange (1332) and the second edge section (1336).

[0129] FIG. 21 is a schematic plan view of the cover (1350) illustrated in FIG. 13 according to one implementation.

[0130] FIG. 22 is a schematic perspective view of the lower part of the cover (1350) shown in FIG. 13 according to one implementation.

[0131] The cover (1350) includes a ring (1351) and a first protrusion (1354) that extends from the ring (1351) and is configured to extend into a first opening (1325) of the flow guide (1320). The cover (1350) includes a second protrusion (1355) that extends from the ring (1351) and is configured to extend into a second opening (1326) of the flow guide (1320).

[0132] The first protrusion (1354) and the second protrusion (1355) are slidable in the first opening (1325) and the second opening (1326) of the flow guide (1320), respectively. Each of the first opening (1325), the second opening (1326), the first protrusion (1354), and the second protrusion (1355) has a semicircular shape.

[0133] FIG. 23 is a schematic partial side view of a processing chamber (2300) having a process kit (2310) of a processing position according to one implementation.

[0134] The processing chamber (2300) is similar to the processing chamber (300) illustrated in FIG. 3 and includes one or more of its aspects, features, components, attributes, and / or operations. The process kit (2310) is similar to the process kit (310) illustrated in FIG. 3 and includes one or more of its aspects, features, components, attributes, and / or operations.

[0135] In the embodiment illustrated in FIG. 23, the flanges (331, 332) are movable upward and downward relative to the intermediate plate (321), and the intermediate plate (321) is supported on the leg (313) of the upper liner (312). In the embodiment illustrated in FIG. 23, one or more first openings (2351) are formed in the intermediate plate (321) adjacent to the first side (322), and one or more second openings (2352) are formed in the intermediate plate (321) adjacent to the second side (323).

[0136] The process kit (2310) includes a cover (2320) configured to cover one or more first openings (2351) and one or more second openings (2352) when the cover (2320) is in the processing position shown in FIG. 23. The cover (2320) includes a ring having a width (W1) greater than the major diameter (MD1) of each of the one or more first openings (2351) and one or more second openings (2352).

[0137] The placement of the cover (2320) on the intermediate plate (321) in the processing position seals the openings (2351, 2352) to seal the upper part (136b) of the process volume (136) from the lower part (136a).

[0138] The cover (2320) is supported on the protruding section (335) of the first flange (331) and the protruding section (336) of the second flange (332). The raising and lowering of the substrate support (306) raises and lowers the flanges (331, 332), which ultimately raises and lowers the cover (2320) using the interface between the protruding sections (335, 336) and the cover (2320).

[0139] FIG. 24 is a schematic partial side view of a processing chamber (2300) having a process kit (2310) of a cleaning position (shown in FIG. 23) according to one implementation.

[0140] In FIG. 24, the cleaning position is an upward position relative to the processing position shown in FIG. 23.

[0141] In FIG. 24, the substrate is removed from the processing chamber (1300), and the cover (2320) is lifted to an elevated position to open the openings (2351, 2352) of the intermediate plate (321). One or more cleaning gases (C1) flow through one or more first openings (2351) and into the upper portion (136b) of the process volume (136). The cleaning gases (C1) flow through one or more second openings (2352) and the flow guide (1320) and are exhausted from the processing chamber (2300).

[0142] FIG. 25 is a schematic plan view of the process kit (2310) shown in FIG. 23 and FIG. 24 according to one implementation. As shown in FIG. 3, the inner surface (e.g., the lowest surface) of the intermediate plate (321) (facing the substrate support (106) and the substrate (102)) may be flat.

[0143] FIG. 26 is a schematic plan view of the process kit (2310) illustrated in FIG. 23 and FIG. 24 according to one embodiment. In the embodiment illustrated in FIG. 26, the inner surface of the intermediate plate (321) includes a plurality of pins (2610) extending along the length (L1) of the intermediate plate (321). The length (L1) extends between the first side (322) and the second side (323). In the embodiment illustrated in FIG. 25, the length (L1) corresponds to the diameter of the intermediate plate (321). In the embodiment illustrated in FIG. 26, the first side (322) and the second side (323) of the intermediate plate (321) are linear (rather than arched) so that the length (L1) is a rectangular length.

[0144] FIG. 27 is a schematic plan view of the process kit (2310) illustrated in FIG. 23 and FIG. 24 according to one embodiment. In the embodiment illustrated in FIG. 27, the inner surface of the intermediate plate (321) includes a plurality of pins (2710). Each of the pins (271) has a length (L2) that is smaller than the length (L1) of the intermediate plate (321). In the embodiment illustrated in FIG. 27, the length (L2) is about 50% of the length (L1).

[0145] FIG. 28 is a schematic plan view of the process kit (2310) illustrated in FIG. 23 and FIG. 24 according to one embodiment. In the embodiment illustrated in FIG. 28, the inner surface of the intermediate plate (321) includes a plurality of pins (2810). Each of the pins (271) has a length (L2) that is smaller than the length (L1) of the intermediate plate (321). In the embodiment illustrated in FIG. 28, the length (L2) is about 30% of the length (L1).

[0146] FIG. 29 is a schematic perspective view of the inner surface of the intermediate plate (321) shown in FIG. 26 according to one implementation. As shown in FIG. 29, one or more process gases (P1) flow through flow paths between the pins (2610).

[0147] FIG. 30 is a schematic side cross-sectional view of the intermediate plate (321) shown in FIG. 29 according to one implementation. As shown in FIG. 29 and FIG. 30, the pins (2610) have a flat edge (2611).

[0148] FIG. 31 is a schematic side cross-sectional view of the intermediate plate (321) shown in FIG. 29 according to one implementation. As shown in FIG. 31, the pins (3110) have an arched edge (3111).

[0149] FIG. 32 is a schematic side cross-sectional view of the intermediate plate (321) shown in FIG. 29 according to one implementation. As shown in FIG. 32, the pins (3210) have patterned edges (3211) such that a plurality of arcs are included along the length (L1) for each pin (3210).

[0150] FIG. 33 is a schematic side view of the intermediate plate (321) shown in FIG. 26 according to one embodiment. In the embodiment shown in FIG. 33, the pins (2610) are omitted, and the intermediate plate (321) includes a pair of support legs (3310, 3311). The support legs (3310, 3311) may be supported on one or more of flanges (331, 332), a substrate support (106), an upper liner (312), and / or a preheating ring (302).

[0151] FIG. 34 is a schematic block diagram of a method (3400) for processing substrates according to one implementation.

[0152] The operation (3402) includes heating a substrate positioned on a substrate support.

[0153] Operation (3404) includes flowing one or more process gases over a substrate to form one or more layers on the substrate. Flowing one or more process gases over the substrate includes guiding one or more process gases through a rectangular flow opening of a process kit. In one embodiment that may be combined with other embodiments, one or more process gases are supplied at a pressure greater than 300 Torr, for example, within the range of 300 Torr to 600 Torr. In one embodiment that may be combined with other embodiments, one or more process gases are supplied at a flow rate of less than 5,000 SCCM (standard cubic centimeters per minute). In one embodiment that may be combined with other embodiments, the substrate is rotated at a rotational speed of less than 8 RPM (rotations-per-minute) during the flow of one or more process gases over the substrate. In one example that may be combined with other examples, the rotational speed is 1 RPM.

[0154] Operation (3405) includes exhausting one or more process gases through an exhaust path formed at least partially in the side wall.

[0155] Operation (3406) comprises moving at least a portion of the process kit to open one or more first openings and one or more second openings after exhausting one or more process gases. At least a portion of the process kit is moved by a distance of less than 20 mm, e.g. 10 mm. In one or more embodiments, moving comprises lifting or lowering at least a portion of the process kit. In one embodiment that may be combined with other embodiments, moving at least a portion of the process kit comprises lifting the cover to slide one or more protrusions of the cover against the intermediate plate of the flow guide while the intermediate plate is supported on the preheating ring. In one embodiment that may be combined with other embodiments, moving at least a portion of the process kit comprises lifting the cover. The cover comprises a ring having a width greater than the main diameter of each of the one or more first openings and one or more second openings. In one embodiment that can be combined with other embodiments, movement of at least part of the process kit includes lifting or lowering the intermediate plate of the flow guide by moving two flanges coupled to the intermediate plate using a substrate support.

[0156] The operation (3408) includes flowing one or more cleaning gases through one or more first openings and into the area between the process kit and the window.

[0157] The operation (3410) includes flowing one or more cleaning gases through the zone and into one or more second openings.

[0158] The operation (3412) includes exhausting one or more cleaning gases through an exhaust path after the flow of one or more cleaning gases into one or more second openings.

[0159] Operation (3414) includes rotating the process kit by a rotation angle greater than 0 degrees and less than 90 degrees. The process kit may be rotated, for example, while the process kit is in the cleaning position used for operations (3408, 3410). In one embodiment that may be combined with other embodiments, the rotation angle is within the range of 15 to 30 degrees.

[0160] The method (3400) may also include the step of flowing one or more purge gases into a processing chamber. One or more purge gases may be flowed into the processing chamber before, during, and / or after one or more of operation (3404), operation (3405), operation (3408), operation (3410), and / or operation (3412). One or more purge gases may be flowed into a slit valve of the processing chamber, a lower portion (136a) of the processing volume, an upper portion (136b) of the processing volume (136), any other portion(s) of the processing volume (136), and / or a purge volume (138).

[0161] FIG. 35 is a schematic partial side cross-sectional view of a processing chamber (3500) having a process kit (3510) according to one implementation. The processing chamber (3500) is similar to the processing chamber (300) shown in FIG. 3 and includes one or more of its aspects, features, components, attributes, and / or operations. The processing chamber (3500) is shown in the processing state of FIG. 35.

[0162] The process kit (3510) comprises a plate (3511) having a first surface (3512) and a second surface (3513) facing the first surface (3512). The second surface (3513) faces the substrate support (106). The process kit (3510) comprises a liner (3520). The liner (3520) comprises an annular section (3521) and one or more regs (3522) extending inwardly with respect to the annular section (3521). The one or more regs (3522) are configured to support one or more outer regions of the second surface (3513) of the plate (3511). The liner (3520) includes one or more inlet openings (3523) extending to the inner surface (3524) of the annular section (3521) on the first side of the liner (3520), and one or more outlet openings (3525) extending to the inner surface (3524) of the annular section (3521) on the second side of the liner (3520).

[0163] One or more inlet openings (3523) extend from the outer surface (3526) of the annular section (3521) of the liner (3520) to the inner surface (3524). One or more outlet openings (3525) extend from the lower surface (3529) of the liner (3520) to the inner surface (3524). The liner (3520) includes a first extension (3527) and a second extension (3528) positioned on the outer side of the lower surface (3529) of the liner (3520). At least a portion of the annular section (3521) of the liner (3520) is aligned with the first extension (3527) and the second extension (3528). In the embodiment illustrated in FIG. 35, the lowermost end of the plate (3511) is aligned over the lowermost end of the liner (3520). In the embodiment illustrated in FIG. 35, the lowest end of the plate (3511) is part of the second surface (3513), and the lowest end of the liner (3520) is part of the first extension (3527) and / or the second extension (3528). The present disclosure takes into account that the lowest end of the liner (3520) may be part of the lower surface (3529).

[0164] The plate (3511) is in the shape of a disk, and the annular section (3521) is in the shape of a ring. The plate (3511) may be in the shape of a rectangle. In one or more embodiments, one or more regies (3522) comprise a single ring-shaped regie. In one or more embodiments, one or more regies (3522) comprise two regies facing each other and in the shape of arched segments.

[0165] A flow module (112) (which may be at least part of the side wall of the processing chamber (3500)) includes one or more first inlet openings (3514) that are in fluid communication with the lower portion (136a) of the processing volume (136). The flow module (112) includes one or more second inlet openings (3515) that are in fluid communication with the upper portion (136b) of the processing volume (136). One or more first inlet openings (3514) are in fluid communication with one or more flow gaps between the liner (3520) (upper liner in FIG. 35) and the lower liner (311). One or more second inlet openings (3515) are in fluid communication with one or more inlet openings (3523) of the liner (3520).

[0166] In the embodiments illustrated in FIGS. 35 and 37, one or more inlet openings (3523) are oriented horizontally, and one or more outlet openings (3525) are oriented obliquely. The present disclosure takes into account that one or more inlet and / or outlet openings (3523, 3525) may be oriented horizontally, oriented obliquely, and / or include one or more turns (e.g., turns illustrated for one or more first inlet openings (3514) and one or more gas exhaust outlets (116)).

[0167] During a deposition operation (e.g., an epitaxial growth operation), one or more process gases (P1) are flowed through one or more first inlet openings (3514), through one or more gaps, and into the lower portion (136a) of the processing volume (136) to flow over the substrate (102). During a deposition operation, one or more purge gases (P2) are flowed through one or more second inlet openings (3515), through one or more inlet openings (3523) of the liner (3520), and into the upper portion (136b) of the processing volume (136). One or more purge gases (P2) are flowed simultaneously with the flow of one or more process gases (P1). The flow of one or more purge gases (P2) through the upper portion (136b) makes it possible to reduce or prevent the flow of one or more process gases (P1) into the upper portion (136b) that would contaminate the upper portion (136b). One or more process gases (P1) are exhausted through the gaps between the liner (3520) and the lower liner (311) and through one or more gas exhaust outlets (116). One or more purge gases (P2) are exhausted through one or more exhaust openings (3525), through the same gaps between the liner (3520) and the lower liner (311), and through one or more gas exhaust outlets (116) identical to those of the one or more process gases (P1). The present disclosure takes into account that one or more purge gases (P2) may be exhausted separately through one or more second gas exhaust outlets distinct from the one or more gas exhaust outlets (116).

[0168] The present disclosure also takes into account that one or more purge gases may be supplied to a purge volume (138) (through a plurality of purge gas inlets (164)) during a deposition operation and may be exhausted from the purge volume (138).

[0169] FIG. 36 is a schematic perspective view of the process kit (3510) illustrated in FIG. 35 according to one implementation.

[0170] FIG. 37 is a schematic partial side view of the processing chamber (3500) illustrated in FIG. 35 according to one embodiment. The processing chamber (3500) is shown in FIG. 37 as being in a cleaned state.

[0171] During the cleaning operation, one or more cleaning gases (C1) flow through one or more first inlet openings (3514), through one or more gaps (between the liner (3520) and the lower liner (311), and into the lower portion (136a) of the processing volume (136). During the cleaning operation, one or more cleaning gases (C2) flow through one or more second inlet openings (3515), through one or more inlet openings (3523) of the liner (3520), and into the upper portion (136b) of the processing volume (136). One or more cleaning gases (C2) flow simultaneously with the flow of one or more cleaning gases (C1). The present disclosure takes into account that one or more cleaning gases (C2) used to clean surfaces adjacent to the upper portion (136b) may be the same or different from one or more cleaning gases (C1) used to clean surfaces adjacent to the lower portion (136a) of the processing volume (136).

[0172] The processing chamber (3500) enables the separation of gases supplied to the lower portion (136a) from gases supplied to the upper portion (136b), thereby enabling parameter adjustment. Additionally, one or more purge gases and one or more cleaning gases may be separately supplied to the upper portion (136b) to enable reduced contamination of the window (108) and / or plate (3511).

[0173] As illustrated in FIGS. 35 and 37, one or more second inlet openings (3515) may be aligned over one or more first inlet openings (3514), and one or more inlet openings (3523) of the liner (3520) may be aligned over one or more gaps between the liner (3520) and the lower liner (311). As illustrated in FIG. 38, one or more second inlet openings (3515) may be positioned at an angle difference from one or more first inlet openings (3514), and one or more inlet openings (3523) of the liner (3520) may be positioned at an angle difference from one or more gaps between the liner (3520) and the lower liner (311).

[0174] The flow of gases in the lower portion (136a) and the upper portion (136b) during both the deposition operation and the cleaning operation enables reduced or removed backflow of gases from one or more discharge openings (3525) (e.g., backflow from one or more discharge openings (3525) into the upper portion (136b)) and reduced or removed backflow from one or more gas exhaust outlets (116) (e.g., backflow from gaps into the lower portion (136a)).

[0175] FIG. 38 is a schematic partial plan view of the plate (3511), flow module (112), and liner (3520) shown in FIG. 35 and FIG. 37 according to one embodiment. In the embodiment shown in FIG. 38, one or more second inlet openings (3515) are positioned along the perimeter of the processing chamber (3500) (e.g., the perimeter (3801) of the flow module (112)) at an angle difference from one or more first inlet openings (3514).

[0176] One or more inlet openings (3523) of the liner (3520) may be positioned at an angle difference from one or more gaps between the liner (3520) and the lower liner (311) along the perimeter of the chamber (e.g., the perimeter (3802) of the liner (3520)).

[0177] FIG. 39 is a schematic block diagram of a method (3900) for processing substrates according to one implementation.

[0178] The operation (3901) of the method (3900) includes heating a substrate positioned on a substrate support within a chamber.

[0179] Operation (3903) includes flowing one or more process gases over a substrate to form one or more layers on the substrate. One or more process gases are flowed through one or more first inlet openings that are fluidly in communication with the lower portion of the processing volume. Flowing one or more process gases over the substrate includes guiding one or more process gases between the plate and the substrate. The plate is supported on a liner to divide the processing volume into a lower portion and an upper portion. Operation (3903) includes flowing one or more purge gases through the upper portion simultaneously with the flow of one or more process gases over the substrate. One or more purge gases are flowed through one or more second inlet openings that are fluidly in communication with the upper portion of the processing volume.

[0180] Operation (3905) includes exhausting one or more process gases.

[0181] Operation (3907) includes flowing one or more cleaning gases through an upper portion while the plate is supported on a liner, the upper portion being between the plate and the window. Operation (3907) includes flowing one or more cleaning gases through a lower portion of the processing volume simultaneously with flowing one or more cleaning gases through the upper portion.

[0182] Operation (3909) includes exhausting one or more cleaning gases from the upper and lower portions of the processing volume.

[0183] FIG. 40 is a schematic partial side cross-sectional view of a processing chamber (4000) according to one embodiment. The processing chamber (4000) is similar to the processing chamber (3500) shown in FIG. 35 and FIG. 37 and includes one or more of its aspects, features, components, attributes, and / or operations. The processing chamber (4000) is shown in the processing state of FIG. 40.

[0184] The processing chamber (4000) includes a window (4008) that defines at least partially the processing volume (136). The window (4008) includes a first surface (4011) that is concave or flat (in the embodiment shown in FIG. 40, the first surface (4011) is flat). The window (4008) includes a second surface (4012) that is convex. The second surface (4012) faces the substrate support (106).

[0185] The process kit within the processing chamber (4000) includes a liner (4020). The liner (4020) is similar to the liner (3520) shown in FIGS. 35 and 37 and includes one or more of its aspects, features, components, attributes, and / or operations.

[0186] The window (4008) includes an inner section (4013) and an outer section (4014). A first surface (4011) and a second surface (4012) are at least a part of the inner section (4013). The inner section (4013) is transparent, and the outer section (4014) is opaque. The outer section (4014) is at least partially accommodated in one or more side walls of the processing chamber (4000) (e.g., in the flow module (112)).

[0187] FIG. 41 is a schematic enlarged view of the window (4008) illustrated in FIG. 40 according to one embodiment. The second surface (4012) of the window (4008) comprises one or more portions, each of which has a radius of curvature (R1) that is at least 1.5 times greater than the width (W1) of the inner section (4013). In one or more embodiments, the radius of curvature (R1) is at least 2.0 times greater than the width (W1). The second surface (4012) has an arc angle (A1) less than 40 degrees, preferably less than 25 degrees. In one or more embodiments, the arc angle (A1) is 20 degrees or less, e.g., 15 degrees or 20 degrees. In one or more embodiments, the arc angle (A1) is 6.0 degrees or less. In one or more examples of such embodiments, the arc angle (A1) is within the range of 3.7 to 4.3 degrees, e.g., 4.0 degrees.

[0188] As discussed herein, the present disclosure enables reduced or eliminated effects that the shape of the window (e.g., concave, convex, or substantially flat) may have on processing operations (e.g., epitaxial deposition), processing parameters, and film thickness growth. A substantially flat window (e.g., the window (4008) shown in FIGS. 40 and 41) may be used in various processing chamber configurations, various process kit configurations, and / or various process configurations.

[0189] FIG. 42 is a schematic plan view of a flow guide (4200) according to one embodiment. The flow guide (4200) is disposed on a substrate (102). The flow guide (4200) includes a plate (4201) having a first surface and a second surface opposite to the first surface. The flow guide (4200) includes a first set of pins (4210a) extending from the second surface of the plate (4201), and a second set of pins (4210b) extending from the second surface of the plate (4201). The second set of pins (4210b) is spaced apart from the first set of pins (4210a) to define a flow path (4230) between the first set of pins (4210a) and the second set of pins (4210b). The flow path (4230) has a slanted pattern between the first set of pins (4210a) and the second set of pins (4210b). The flow path (4230) is a single flow path between the first pin set (4210a) and the second pin set (4210b). The slant flow path (4230) includes a plurality of linear paths (e.g., straightaways) and a plurality of arched paths (e.g., arched turns) interleaved with the plurality of linear paths. In one or more embodiments, the slant flow path (4230) includes a plurality of linear (e.g., rectangular) sections that are at least partially bounded by the linear sections of the two pin sets (4210a, 4210b). In one or more embodiments, the slant flow path (4230) includes a plurality of arched (e.g., semicircular) sections that are at least partially bounded by the arched sections of the two pin sets (4210a, 4210b). For each pin set (4210a, 4210b), the individual pins can be coupled together. For example, the individual pins can be formed integrally, fastened together, fused together, welded together, and / or otherwise attached to each other to form the individual pin set (4210a, 4210b).

[0190] Each of the first pin set (4210a) and the second pin set (4210b) includes a plurality of linear sections (4211a, 4211b) that intersect with a plurality of arched sections (4212a, 4212b). The first pin set (4210a) is intersected with the second pin set (4210b) such that the plurality of linear sections (4211a) of the first pin set (4210a) are arranged in an alternating arrangement with the plurality of linear sections (4211b) of the second pin set (4210b). For each of the first pin set (4210a) and the second pin set (4210b), a plurality of linear sections (4211a, 4211b) include a first outer linear section (4213a, 4213b), a second outer linear section (4214a, 4214b), and a plurality of intermediate linear sections (4215a, 4215b) disposed between the first outer linear section (4213a, 4213b) and the second outer linear section (4214a, 4214b).

[0191] For each of the first pin set (4210a) and the second pin set (4210b), a plurality of arched sections (4212a, 4212b) include a first outer arched section (4216a, 4216b), a second outer arched section (4217a, 4217b), and a plurality of intermediate arched sections (4218a, 4218b) disposed between the first outer arched section (4216a, 4216b) and the second outer arched section (4217a, 4217b). For each of the first pin set (4210a) and the second pin set (4210b), the first outer linear section (4213a, 4213b) intersects the end of the first outer arched section (4216a, 4216b), and the second outer linear section (4214a, 4214b) intersects the end of the second outer arched section (4217a, 4217b). For each of the first pin set (4210a) and the second pin set (4210b), each of the plurality of intermediate linear sections (4215a, 4215b) intersects the two individual ends of two of the plurality of arched sections (4212a, 4212b).

[0192] The first outer linear section (4213a) of the first pin set (4210a) and the second outer linear section (4214b) of the second pin set (4210b) have a first length (L1). Each of the first outer linear section (4213b) of the second pin set (4210b) and the second outer linear section (4214a) of the first pin set (4210a) has a length (L2, L3) longer than the first length (L1).

[0193] During deposition and / or cleaning operations, gases (e.g., one or more process gases (P1)) flow through a sand flow path (4230) between a first set of pins (4210a) and a second set of pins (4210b). The pins and the sand flow path (4230) enable adjustment of process parameters and enable reduced or eliminated interference with performance (e.g., reduced or eliminated vortex effects when the substrate (102) is rotated during processing). The pins and the sand flow path (4230) also enable efficient use of gases (e.g., one or more process gases (P1)). One or more process gases (P1) flow into a flow path (4230) between a first outer linear section (4213a) and a first outer linear section (4213b). One or more process gases (P1) flow out of the flow path (4230) between the second outer linear section (4214a) and the second outer linear section (4214b).

[0194] The flow path (4230) enables a longer flow path and a relatively smaller flow path cross-sectional area, which can increase gas flow velocities for modularity, parameter adjustment capabilities, and improved uniformity at substantially similar gas partial pressures. The pins of the flow guide (4200) enable reduced or eliminated shadowing effects. The flow guides described herein are modular and interchangeable.

[0195] FIG. 43 is a schematic plan view of a flow guide (4300) according to one embodiment. The flow guide (4300) is similar to the flow guide (4200) illustrated in FIG. 42 and includes one or more of its aspects, features, components, attributes, and / or operations. For each of the first pin set (4310a) and the second pin set (4310b), a plurality of arched sections (4312a, 4312b) have a radius gradient that decreases in a direction (D1) extending from the first side of the plate (4201) to the second side of the plate (4201). For example, the Nth radius (RA) of the second outer arched section (4317a) of the first pin set (4310a). N ) is smaller than the first radius (RA1) of the first outer arched section (4316a) of the first pin set (4310a) and the Nth radius (RD) of the second outer arched section (4317b) of the second pin set (4310b). N ) is smaller than the first radius (RD1) of the first outer arched section (4316b). The flow path (4330) has a width gradient that decreases in the direction (D1). For example, the Nth width (WD N ) is smaller than the first width (WD1) of the flow path (4330). Decreasing gradients enable an increase in gas velocities and uniformity in the adjustment of process parameters. Width gradients enable uniformity in the adjustment of gas flow velocities.

[0196] The plate (4201) includes a first end (4251) and a second end (4252) opposite to the first end (4251). A first outer linear section (4313a) of the first pin set (4310a) is positioned at a first distance (DS1) with respect to the first end (4251) of the plate (4201). A second outer linear section (4314a) of the first pin set (4310a) is positioned at a second distance (DS2) with respect to the second end (4252) of the plate (4201). The second distance (DS2) is different from the first distance (DS1). In the implementation illustrated in FIG. 43, the second distance (DS2) is greater than the first distance (DS1).

[0197] FIG. 44 is a schematic bottom perspective view of the flow guide (4200) shown in FIG. 42 according to one implementation.

[0198] FIG. 45 is a schematic partial side view of the flow guide (4300) illustrated in FIG. 43 according to one embodiment. A first set of pins (4310a) includes a first outer linear section (4313a), a second outer linear section (4314a), and a plurality of intermediate linear sections (4315a). A second set of pins (4310b) includes a first outer linear section (4313b), a second outer linear section (4314b), and a plurality of intermediate linear sections (4315b). In the embodiment illustrated in FIG. 45, the sections of the flow path (4330) between the individual pins are rectangular in shape.

[0199] FIG. 46 is a schematic partial side view of the flow guide (4300) illustrated in FIG. 43 according to one embodiment. In the embodiment illustrated in FIG. 46, the sections of the flow path (4330) between individual pins include sections that are semicircular in shape and sections that are rectangular in shape.

[0200] In the embodiment illustrated in FIG. 46, the flow guide (4300) includes a plurality of flow openings (4651) extending through the plate (4201) and into the flow path (4330). The flow openings (4651) enable the injection of gases from the upper portion (136b) of the processing volume (136) into the lower portion (136a) of the processing volume (136). In the embodiment illustrated in FIG. 46, a plurality of second arched sections (4655) are disposed between individual pins. The second arched sections (4655) are interfacing with the plate (4201). The flow openings (4651) extend through the plate (4201) and the second arched sections (4655).

[0201] FIG. 47 is a schematic plan view of the flow guide (4200) illustrated in FIG. 42 according to one embodiment. In the embodiment illustrated in FIG. 47, the flow guide (4200) is laterally shifted (relative to the position illustrated in FIG. 42) so as to be offset more laterally with respect to the substrate (102) and the substrate support (106). For example, the second outer linear section (4214b) is moved so as to be at least partially aligned with the substrate support (106), and the first outer linear section (4213a) is moved so as to be at a greater distance from the substrate (102) and the substrate support (106). The movement of the flow guide (4200) can enable adjustment of deposition thickness and process parameters. The offset position of the flow guide (4200) enables, for example, operation uniformity (e.g., deposition uniformity) when the substrate (102) is rotated during processing.

[0202] FIG. 48 is a schematic plan view of a flow guide (4800) according to one implementation. The flow guide (4800) is similar to the flow guide (4200) illustrated in FIG. 42 and includes one or more of its aspects, features, components, attributes, and / or operations.

[0203] The flow guide (4800) includes an extended first pin set (4810a) comprising a plurality of first pins (4811a) spaced apart from each other to define a first set (4812a) of flow paths. The flow guide (4800) includes a second pin set (4810b) having a plurality of second pins (4811b) spaced apart from each other to define a second set (4812b) of flow paths. The flow guide (4800) includes a central flow path (4830) between a first inner pin (4821a) of the first pin set (4810a) and a second inner pin (4821b) of the second pin set (4810b).

[0204] Each of the plurality of first pins (4811a), the plurality of second pins (4811b), the first set of flow paths (4812a), and the second set of flow paths (4812b) is arch-shaped. The central flow path (4830) has a convex shape. The first set of pins (4810a) includes a first outer pin (4814a) disposed outside of the plurality of first pins (4811a), and the second set of pins (4810b) includes a second outer pin (4814b) disposed outside of the plurality of second pins (4811b). Each of the first outer pin (4814a) and the second outer pin (4814b) has a length (LE2) longer than the lengths (LE1) of the plurality of first pins (4811a) and the plurality of second pins (4811b).

[0205] The flow guide (4800) enables the same flow flux across multiple zones of the exposed surface of the substrate (102). As an example, the gas velocities of one or more process gases (P1) across a first zone (aligned below the first set of flow paths (4812a)), a second zone (aligned below the central flow path (4830)), and a third zone (aligned below the second set of flow paths (4812b)) of the substrate (102) are substantially the same as each other. One or more process gases (P1) may be supplied from the same gas source to each of the central flow path (4830), the first set of flow paths (4812a), and the second set of flow paths (4812b). The present disclosure takes into account that one or more process gases (P1) may be supplied independently to each of the central flow path (4830), the first set of flow paths (4812a), and the second set of flow paths (4812b).

[0206] FIG. 49 is a schematic partial side view of the flow guide (4200) shown in FIG. 42 in the processing chamber during the lowering state according to one implementation.

[0207] FIG. 50 is a schematic partial side view of the flow guide (4200) shown in FIG. 49 during the rising state according to one implementation.

[0208] As illustrated in the lowered state of FIG. 49, the distance (DA1) between the first set of pins (4210a) and the second set of pins (4210b) (on one side) and the substrate (102) (on the other side) is smaller than the distance (DA1) illustrated in FIG. 50. One or more of the substrate support (106) and / or plate (4201) of the flow guide (4200) may be moved to adjust the distance (DA1). The distance (DA1) may be adjusted during processing operations and / or between repetitions of processing operations. In one or more embodiments, the plate (4201) may be maintained supported on one or more regs (3522) of the upper liner (3520) during the adjustment of the distance (DA1). In one or more embodiments, the plate (4201) may be lifted off so as to be in a certain gap from one or more regs (3522) during the adjustment of the distance (DA1). In one or more embodiments, the distance (DA1) shown in FIG. 49 is within the range of 0.2 mm to 2.0 mm (e.g., 1.0 mm) to enable the sealing between the pins of the pin sets (4210a, 4210b) and the substrate (102) and the guiding of gases through the sand pattern of the flow path (4230). During process (e.g., deposition) operations, the distance (DA1) may vary within the range of 0.2 mm to 5.0 mm (e.g., within the range of 1.0 mm to 5.0 mm).

[0209] FIG. 51 is a schematic partial side view of the flow guide (4200) illustrated in FIG. 49 in a tilted position according to one embodiment. The flow guide (4200) is oriented in a tilted position such that the plate (4201) is oriented at an oblique angle with respect to the substrate (102). In the tilted position, the first pin (5101) is positioned in a first vertical position different from the second vertical position of the second pin (5102). In the embodiment illustrated in FIG. 51, the second reg (5122) has a height greater than the height of the first reg (3522). The second leg (5122) may be positioned at an angle difference from one or more other legs (e.g., the first leg (3522)) so that the plate (4201) of the flow guide (4200) can be raised, rotated, and lowered to the tilted position shown in FIG. 51. For example, the flow guide (4200) may be moved from a horizontal position (e.g., shown in FIG. 49) to a tilted position. The upper surface of the first leg (3522) and / or the second leg (5122) may be tapered (as shown for the second leg (5122)) to interface with the tilted plate (4201) in contact with the legs (3522, 5122). In one or more embodiments, the flow guide (4200) can be moved to a tilted position by raising the substrate support (106) so that it engages with the first part of the flow guide (4200) before engaging with the second part so that the flow guide (4200) is tilted by the additional raising of the substrate support (106).

[0210] FIG. 52 is a schematic partial side view of the flow guide (4200) illustrated in FIG. 49 in a tilted position according to one embodiment. In one or more embodiments, the plate (4201) of the flow guide (4200) is coupled to a first flange (331) and a second flange (332). Each of the first flange (331) and the second flange (332) includes a tapered lower surface (5210) such that the rise of the substrate support (106) contacts the higher portion (having a first height) of each flange (331, 332) before the shorter portion (having a second height) of each flange (331, 332), thereby causing the additional rise of the substrate support (106) to tilt the flow guide (4200). FIG. 53 is a schematic block diagram of a method (5300) for processing substrates according to one embodiment.

[0211] The operation (5301) of the method (5300) includes heating a substrate positioned on a substrate support.

[0212] The operation (5303) includes flowing one or more process gases over a substrate to form one or more layers on the substrate. Flowing one or more process gases over the substrate includes guiding one or more process gases through one or more flow paths that are at least partially defined by a plurality of pins extending from a plate of a flow guide.

[0213] Operation (5305) includes moving one or more of a substrate support or a plate to adjust the distance between a plurality of pins and a substrate. In one or more embodiments, the movement of the plate includes raising the plate to lift the plate relative to a liner, and lowering the plate to engage with the liner and support the plate on the liner in a tilted position. In one or more embodiments, the movement of the plate includes raising the substrate support to engage with one or more flanges of a flow guide and tilting the plate to a tilted position. One or more flanges include a first portion having a first height and a second portion having a second height lower than the first height.

[0214] The advantages of the present disclosure include sealing the lower portions of process volumes from the upper portions of process volumes during processing operations; modularity in process applications; adjusting deposition process parameters at low rotational speeds, high pressures, and low flow rates; having the ability to clean processing chambers (e.g., liners and windows), e.g., the upper portions of processing volumes; reduction or elimination of the influence of window shapes (e.g., profiles) on processing operations; reduced or eliminated formation of materials on the windows; use of curved (e.g., convex and / or concave) windows; temperature control and temperature uniformity; deposition uniformity; high throughput and production yield; adjustment of gas flow paths; mitigated rotational effects; separate supply of gases to the upper portions of processing volumes; and reduced or eliminated interference with heating (e.g., light from heat lamps).

[0215] As one example, a rectangular flow opening for one or more process gases enables a smaller cross-section, which allows for the adjustment of process parameters (e.g., gas pressure, processing temperature, gas composition, and / or gas flow rate) for one or more process gases. The flow guide also enables the ability to have a cleaning gas path (which at least partially bypasses the rectangular flow opening) that enables cleaning of components within the internal volume (e.g., one or more surfaces of the window and / or one or more surfaces of the upper liner). Sealing and adjustment enable low rotational speeds of the substrate support (e.g., less than 8 RPM), high pressures of one or more process gases, and low flow rates of one or more process gases. As another example, the seal and the rectangular flow opening enable the mitigation of the effects of rotation of the substrate support (e.g., gas vortex) on one or more process gases. As an additional example, the flow guide enables adjustment while reducing or eliminating interference with the adjustment of heating of components (e.g., substrate and / or preheating ring). The rectangular flow opening, seal, and adjustment function also enable reducing or eliminating the influence that the shape of the window (e.g., concave, convex, or substantially flat) may have on processing operations (e.g., epitaxial deposition), processing parameters, and film thickness growth. The reduction or elimination of influence isolates the window shape from processing efficiency at least partially. Additionally, as an example, the adjustment function enables the use of concave or convex windows in addition to substantially flat windows. The present disclosure takes into account that substantially flat windows may be used in the implementations described herein.

[0216] Furthermore, implementations of the present disclosure (e.g., implementations of intermediate plates) are modular and can be used across various processing (e.g., deposition) operations and / or cleaning operations, including across various operating parameters. Additionally, one or more aspects, features, components, operations and / or attributes of the various process kits (e.g., intermediate plates) described herein may be selected, combined, and / or modified depending on the processing parameters (e.g., flow rate, temperature, pressure, gas composition, etc.) used in the processing operations and / or cleaning operations.

[0217] The seal also enables reduced or removed formation of materials on the windows (e.g., upper window) (e.g., deposition of deposition materials during processing operations).

[0218] It is considered that one or more aspects disclosed in this specification may be combined. As an example, one or more aspects and features of a processing chamber (100), a controller (120), a processing chamber (300), a processing chamber (700), lock stop structures (910a, 910b), lock extensions (1001), a processing chamber (1300), a processing chamber (2300), a process kit (310), a process kit (1310), a process kit (2310), pins (2610, 2710, 2810, 3110 and / or 3210), support legs (3310, 3311), a method (3400), a processing chamber (3500), a process kit (3510), a method (3900), a processing chamber (4000), a window (4008), a flow guide (4200), a flow guide (4300), flow openings (4651), a flow guide (4800), and / or a method (5300), Components, operations, and / or attributes may be combined. Furthermore, it is considered that one or more aspects disclosed herein may include some or all of the aforementioned advantages.

[0219] Although the foregoing relates to embodiments of the present disclosure, other and additional embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the subsequent claims.

Claims

Claim 1 A process kit for placement in a processing chamber applicable for use in semiconductor manufacturing, comprising a flow guide, wherein the flow guide comprises: an intermediate plate having a first side and a second side facing the first side along a first direction — the first side and the second side are arched — a first flange extending outwardly to a third side of the intermediate plate and outwardly to an outer surface of the intermediate plate; a second flange extending outwardly to a fourth side of the intermediate plate and outwardly to an outer surface of the intermediate plate — the fourth side facing the third side along a second direction intersecting the first direction — and a rectangular flow opening defined between a first planar inner surface of the first flange and a second planar inner surface of the second flange. Claim 2 A process kit according to claim 1, wherein each of the first flange and the second flange has a semicircular shape. Claim 3 A process kit according to claim 1, wherein the inner surface of the intermediate plate comprises one or more fins having a flat edge, an arched edge, or a patterned edge, each of which has a length smaller than the diameter extending between the first side and the second side. Claim 4 A process kit according to claim 1, wherein the flow guide further comprises: a first edge section extending between the third side of the intermediate plate and the first flange; and a second edge section extending between the fourth side of the intermediate plate and the second flange. Claim 5 In paragraph 4, the process kit wherein each of the first edge section and the second edge section has a rectangular shape. Claim 6 In claim 5, the flow guide further comprises a first opening formed between the first flange and the first edge section, and a second opening formed between the second flange and the second edge section, in a process kit. Claim 7 A process kit according to claim 6, further comprising a cover, wherein the cover comprises: a ring; a first protrusion extending from the ring and configured to extend into the first opening; and a second protrusion extending from the ring and configured to extend into the second opening. Claim 8 A process kit according to claim 7, wherein the first protrusion and the second protrusion are each slidable in the first opening and the second opening, and the first opening, the second opening, the first protrusion, and the second protrusion each have a semicircular shape. Claim 9 A process kit according to claim 1, wherein the flow guide further comprises: one or more first openings formed in the intermediate plate adjacent to the first side; and one or more second openings formed in the intermediate plate adjacent to the second side. Claim 10 A process kit according to claim 9, further comprising a cover configured to cover the one or more first openings and the one or more second openings, wherein the cover comprises a ring having a width greater than the major diameter of each of the one or more first openings and the one or more second openings. Claim 11 A processing chamber applicable for use in semiconductor manufacturing, comprising: a window defining at least partially of an internal volume; a plurality of ramps; a substrate support disposed in the internal volume—the substrate support comprising a support surface—; and a process kit disposed in the internal volume, wherein the process kit comprises a flow guide, the flow guide comprising: an intermediate plate disposed between the support surface and the plurality of ramps—the intermediate plate having a first side and a second side, the first side and the second side being arched—a first flange extending outwardly to a third side of the intermediate plate and outwardly to an outer surface of the intermediate plate, a second flange extending outwardly to a fourth side of the intermediate plate and outwardly to an outer surface of the intermediate plate, and a rectangular flow opening defined between a first planar inner surface of the first flange and a second planar inner surface of the second flange. Claim 12 In claim 11, the processing chamber, wherein the first flange and the second flange are supported on a preheating ring disposed on the outer side of the substrate support. Claim 13 In Clause 11, the above intermediate plate is a processing chamber supported on a liner. Claim 14 A method for processing substrates, comprising: heating a substrate positioned on a substrate support; flowing one or more process gases over the substrate to form one or more layers on the substrate — the step of flowing the one or more process gases over the substrate includes guiding the one or more process gases through a rectangular flow opening of a process kit —; moving at least a portion of the process kit to open one or more first openings and one or more second openings; flowing one or more cleaning gases through the one or more first openings and into a zone between the process kit and a window; and flowing the one or more cleaning gases through the zone and into the one or more second openings. Claim 15 A method for processing substrates according to claim 14, wherein the step of moving at least a portion of the process kit comprises the step of lifting the cover to slide one or more protrusions of the cover relative to the intermediate plate while the intermediate plate of the flow guide is supported on the preheating ring. Claim 16 A method for processing substrates according to claim 14, wherein the step of moving at least a portion of the process kit includes the step of lifting a cover, said cover comprising a ring having a width greater than the main diameter of each of the one or more first openings and the one or more second openings. Claim 17 A method for processing substrates according to claim 14, wherein the step of moving at least a portion of the process kit comprises the step of lifting or lowering the intermediate plate by moving two flanges coupled to the intermediate plate of the flow guide using the substrate support. Claim 18 A method for processing substrates according to claim 14, further comprising the step of rotating the substrate at a rotational speed of less than 8 RPM (rotations-per-minute) during the flow of one or more process gases over the substrate. Claim 19 A method for processing substrates according to claim 14, further comprising: a step of exhausting the one or more process gases through an exhaust path at least partially formed in a sidewall before moving at least a part of the process kit; and a step of exhausting the one or more cleaning gases through the exhaust path after the flow of the one or more cleaning gases into the one or more second openings. Claim 20 A method for processing substrates according to claim 14, further comprising the step of rotating the process kit by a rotation angle greater than 0 degrees and less than 90 degrees. Claim 21 A flow guide applicable for use in semiconductor manufacturing, comprising: a plate having a first surface and a second surface opposite to the first surface; a first set of fins extending from the second surface; and a second set of fins extending from the second surface, wherein the second set of fins is spaced apart from the first set of fins to define a flow path between the first set of fins and the second set of fins, and the flow path has a serpentine pattern between the first set of fins and the second set of fins. Claim 22 In claim 21, the flow guide, wherein each of the first pin set and the second pin set comprises a plurality of linear sections intersecting a plurality of arched sections. Claim 23 In paragraph 22, the first pin set is interleaved with the second pin set so that the plurality of linear sections of the first pin set are arranged in an alternating arrangement with the plurality of linear sections of the second pin set, forming a flow guide. Claim 24 A flow guide according to claim 22, further comprising a plurality of flow openings extending through the plate and into the flow path. Claim 25 In claim 22, for each of the first pin set and the second pin set, the plurality of arched sections have a decreasing radius gradient in a direction extending from the first side of the plate to the second side of the plate, a flow guide. Claim 26 A flow guide according to claim 22, wherein for each of the first pin set and the second pin set, the plurality of linear sections comprises a first outer linear section, a second outer linear section, and a plurality of intermediate linear sections disposed between the first outer linear section and the second outer linear section; and the plurality of arched sections comprises a first outer arched section, a second outer arched section, and a plurality of intermediate arched sections disposed between the first outer arched section and the second outer arched section. Claim 27 In claim 26, the plate comprises a first end and a second end opposite to the first end; the first outer linear section of the first pin set is positioned at a first distance from the first end of the plate; and the second outer linear section of the first pin set is positioned at a second distance from the second end of the plate, wherein the second distance is greater than the first distance, a flow guide. Claim 28 In paragraph 26, for each of the first pin set and the second pin set, the first outer linear section intersects the end of the first outer arched section; and the second outer linear section intersects the end of the second outer arched section, a flow guide. Claim 29 In claim 28, for each of the first pin set and the second pin set, each of the plurality of intermediate linear sections is a flow guide that intersects with two individual ends of two of the plurality of arched sections. Claim 30 A flow guide according to claim 26, wherein the first outer linear section of the first pin set and the second outer linear section of the second pin set have a first length, and each of the first outer linear section of the second pin set and the second outer linear section of the first pin set has a length longer than the first length. Claim 31 A flow guide applicable for use in semiconductor manufacturing, comprising: a plate having a first surface and a second surface opposite to the first surface; a first set of pins extending from the second surface — the first set of pins having a plurality of first pins spaced apart from each other to define a first set of flow paths —; a second set of pins extending from the second surface — the second set of pins having a plurality of second pins spaced apart from each other to define a second set of flow paths —; and a central flow path between a first inner pin of the first set of pins and a second inner pin of the second set of pins. Claim 32 In paragraph 31, the first plurality of pins and the second plurality of pins each have an arched shape, forming a flow guide. Claim 33 In paragraph 32, the first pin set comprises a first outer pin disposed outside of the plurality of first pins; and the second pin set comprises a second outer pin disposed outside of the plurality of second pins, wherein each of the first outer pin and the second outer pin has a length longer than the lengths of the plurality of first pins and the plurality of second pins, a flow guide. Claim 34 A method for processing substrates, comprising: heating a substrate positioned on a substrate support; flowing one or more process gases over the substrate to form one or more layers on the substrate — the step of flowing the one or more process gases over the substrate includes guiding the one or more process gases through one or more flow paths at least partially defined by a plurality of pins extending from a plate of a flow guide —; and moving one or more of the substrate support or the plate to adjust the distance between the plurality of pins and the substrate. Claim 35 A method for processing substrates according to claim 34, wherein the plate is moved to orient the plate to a tilted position in which the first pin is positioned at a first vertical position different from the second vertical position of the second pin. Claim 36 A method for processing substrates according to claim 35, wherein moving the plate comprises raising the plate to lift the plate relative to a liner; and lowering the plate to engage with the liner and supporting the plate on the liner in the tilted position. Claim 37 A method for processing substrates according to claim 35, wherein moving the plate comprises raising the substrate support to engage with one or more flanges of the flow guide and tilting the plate to the tilted position. Claim 38 A method for processing substrates according to claim 37, wherein the one or more flanges comprise: a first portion having a first height; and a second portion having a second height smaller than the first height. Claim 39 A method for processing substrates according to claim 34, wherein the plate is moved to adjust the distance to be less than 0.2 mm. Claim 40 A method for processing substrates according to claim 39, wherein the plurality of pins comprises a first pin set and a second pin set, the second pin set is spaced apart from the first pin set to define a single flow path between the first pin set and the second pin set, and the single flow path has a sand pattern between the first pin set and the second pin set. Claim 41 A process kit for placement in a processing chamber applicable for use in semiconductor manufacturing, comprising: a plate having a first surface and a second surface opposite to the first surface; a liner, wherein the liner comprises an annular section, one or more ledges extending inwardly with respect to the annular section—the one or more ledges configured to support one or more outer regions of the second surface of the plate—one or more inlet openings extending to an inner surface of the annular section on a first side of the liner, and one or more outlet openings extending to an inner surface of the annular section on a second side of the liner. Claim 42 A process kit according to claim 41, wherein one or more inlet openings extend from the outer surface of the annular section of the liner to the inner surface, and one or more outlet openings extend from the lower surface of the liner to the inner surface. Claim 43 In paragraph 41, a process kit in which the lowermost end of the plate is aligned over the lowermost end of the liner. Claim 44 In paragraph 42, the process kit further comprises a first extension and a second extension disposed on the lower surface outside of the liner. Claim 45 In paragraph 44, a process kit in which at least a portion of the annular section of the liner is aligned with the first extension and the second extension. Claim 46 A processing chamber applicable for use in semiconductor manufacturing, comprising: an internal volume; a substrate support disposed in the internal volume and including a support surface; a window defining at least partially the internal volume; a plate disposed in the internal volume; and a liner disposed in the internal volume, wherein the window comprises a first surface that is concave or flat and a second surface that is convex and faces the substrate support; the plate has a first surface and a second surface opposite to the first surface, wherein the first surface of the plate faces the second surface of the window; and the liner comprises an annular section and one or more regies extending inwardly with respect to the annular section, wherein the one or more regies support one or more outer regions of the second surface of the plate. Claim 47 In paragraph 46, the processing chamber, wherein the window comprises an inner section and an outer section, and the first and second surfaces of the window are at least a part of the inner section. Claim 48 In paragraph 47, the processing chamber, wherein the inner section is transparent and the outer section is opaque. Claim 49 In claim 47, the second surface of the window comprises one or more portions, and each of the one or more portions has a radius of curvature that is at least 1.5 times greater than the width of the inner section, a processing chamber. Claim 50 In paragraph 49, the processing chamber, wherein the radius of curvature is at least 2.0 times larger than the width. Claim 51 In paragraph 47, a processing chamber having a second surface of the window having an arc angle smaller than 40 degrees. Claim 52 In claim 46, the liner further comprises one or more inlet openings extending to the inner surface of the annular section on a first side of the liner, and one or more outlet openings extending to the inner surface of the annular section on a second side of the liner, forming a processing chamber. Claim 53 A processing chamber according to claim 52, wherein one or more inlet openings extend from the outer surface of the annular section of the liner to the inner surface, and one or more outlet openings extend from the lower surface of the liner to the inner surface. Claim 54 A processing chamber according to any one of claims 46 to 53, wherein the liner is an upper liner, the second surface of the plate faces the substrate support, and the plate spans a gap extending inwardly into the one or more resistors to divide the internal volume into an upper portion and a lower portion. Claim 55 A method for processing substrates, comprising: heating a substrate positioned on a substrate support within a processing volume of a chamber; flowing one or more process gases over the substrate to form one or more layers on the substrate — the step of flowing the one or more process gases over the substrate includes guiding the one or more process gases between a plate and the substrate, wherein the plate is supported on a liner to divide the processing volume into a lower portion and an upper portion —; exhausting the one or more process gases; flowing one or more cleaning gases through the upper portion while the plate is supported on the liner — the upper portion is between the plate and a window —; and exhausting the one or more cleaning gases. Claim 56 A method for processing substrates according to claim 55, further comprising the step of flowing one or more purge gases through the upper portion simultaneously with flowing one or more process gases on the substrate. Claim 57 A method for processing substrates according to claim 56, further comprising the step of flowing one or more cleaning gases through the lower portion of the processing volume. Claim 58 A method for processing substrates according to claim 57, wherein the one or more process gases flow through one or more first inlet openings that are fluidly connected to the lower portion of the processing volume. Claim 59 A method for processing substrates according to claim 58, wherein the one or more purge gases flow through one or more second inlet openings that are fluidly connected to the upper portion of the processing volume. Claim 60 A method for processing substrates according to claim 59, wherein the one or more second inlet openings are arranged along the perimeter of the chamber at an angle difference from the one or more first inlet openings.

Images