Bezel-less camera and sensor hole

Abstract

The embodiments described herein relate to subpixel circuits, displays comprising subpixel circuits, and methods for forming subpixel circuits that can be used in displays such as organic light-emitting diode (OLED) displays. Some configurations of the displays described herein include subpixel circuits, an overhang structure, and at least one sensor opening adjacent to an adjacent subpixel circuit. The at least one sensor opening includes a sensor disposed thereunder. Other configurations of the displays described herein include subpixel circuits comprising OLED subpixels and a transparent subpixel with a sensor disposed thereunder. The configurations described herein utilize integrated sensors to increase the transmittance of the display while eliminating the need for bezels and reducing blind spots within the display.

Description

Technology Field

[0001] The embodiments described herein generally relate to displays. More specifically, the embodiments described herein relate to subpixel circuits, displays comprising subpixel circuits, and methods for forming subpixel circuits that can be used within a display, such as an organic light-emitting diode (OLED) display. Background Technology

[0002] Input devices, including display devices, can be used in various electronic systems. Organic light-emitting diodes (OLEDs) are light-emitting diodes (LEDs) that are films of organic compounds in which an emissive electroluminescent layer emits light in response to an electric current. OLED devices are classified as bottom-emitting devices if the emitted light passes through a transparent or translucent bottom electrode and a substrate on which a panel is manufactured. Top-emitting devices are classified based on whether the light emitted from the OLED device exits through a cover added after device manufacturing. OLEDs are currently used to create display devices in many electronic devices. Recent electronics manufacturers are striving to reduce the size of these display devices while simultaneously providing higher resolution than just a few years ago.

[0003] OLED pixel patterning is currently based on processes that limit panel size, pixel resolution, and substrate size. Instead of using fine metal masks, photolithography is used for patterning pixels. Currently, OLED pixel patterning requires the lift-off of organic materials after the patterning process. When lifted off, the organic materials leave behind particle problems that impede OLED performance. Therefore, there is a need in this technical field for subpixel circuits that can be used in displays such as OLED displays, displays including subpixel circuits, and methods for forming subpixel circuits.

[0004] In one embodiment, a display is provided. The display comprises a backplane; a plurality of subpixel circuits separated by an overhang grid disposed on the backplane—each subpixel circuit having subpixels surrounded by overhang structures of the overhang grid, each subpixel having an anode connected to a thin-film transistor (TFT) of the backplane and an organic light-emitting diode (OLED) material disposed on the anode—and a sensor aperture. The subpixel circuits surround the sensor aperture and are separated from the sensor aperture by the overhang grid. The sensor aperture is surrounded by its own overhang structure. The sensor is disposed within or below the backplane, or below the sensor aperture.

[0005] In another embodiment, a display is provided. The display comprises a backplane; a plurality of subpixel circuits separated by an overhang grid disposed over the backplane—each subpixel circuit having subpixels surrounded by overhang structures of the overhang grid, each subpixel having an anode connected to a TFT of the backplane and an organic light-emitting diode (OLED) material disposed over the anode—; and a plurality of sensor arrays, the external sensor arrays of the plurality of sensor arrays adjacent to the subpixel circuits and separated from the subpixel circuits by the overhang grid, and each sensor array having subpixel openings surrounded by overhang structures of the overhang grid. The sensor is disposed within or below the backplane, or below the plurality of sensor arrays.

[0006] In another embodiment, a subpixel circuit is provided. The subpixel circuit includes a backplane and an overhang grid disposed on the backplane, the overhang grid defines an OLED subpixel and a transparent subpixel, and each of the OLED subpixel and the transparent subpixel is surrounded by the overhang structures of the overhang grid. The OLED subpixel has an anode connected to a thin-film transistor (TFT) of the backplane and an OLED material disposed on the anode.

[0007] In another embodiment, a method is provided. The method comprises the steps of: depositing an organic light-emitting diode (OLED) material on a backplane—wherein an overhang grid defines subpixel regions and transparent regions—; placing a cathode on the OLED material over the subpixel regions and transparent regions; depositing an encapsulation layer on the backplane; forming a resist layer within the subpixel regions of the backplane; removing one or more exposed portions of the encapsulation layer; removing one or more exposed portions of the OLED material; and removing the resist layer.

[0008] In another embodiment, a device is provided. The device comprises a backplane and a plurality of overhang structures, wherein adjacent overhang structures among the plurality of overhang structures define at least one subpixel and at least one transparent region, and the device is made by a process comprising the steps of: depositing an OLED material on the backplane—the OLED material is placed on the anode of at least one subpixel—; and depositing a cathode—the cathode is placed on the OLED material of at least one subpixel, and a sensor or emitter of at least one transparent region is operable to receive or project light through the backplane and the transparent region. Brief explanation of the drawing

[0009] In a manner that the features of the above-mentioned disclosure can be understood in detail, a more specific description of the disclosure briefly summarized above may refer to embodiments, some of which are illustrated in the accompanying drawings. It should be noted that since the present disclosure may allow for other embodiments of equivalent effect, the accompanying drawings illustrate only exemplary embodiments of the present disclosure and should therefore not be construed as limiting the scope. FIG. 1a is a schematic top cross-sectional view of a display having an aperture configuration according to embodiments. FIG. 1b is a schematic top cross-sectional view of a display having an array configuration according to embodiments. FIG. 1c and FIG. 1d are schematic top cross-sectional views of a display having a transparent subpixel configuration according to embodiments. FIG. 2a is a schematic cross-sectional view of a subpixel circuit and a sensor aperture according to embodiments. FIG. 2b is a schematic cross-sectional view of a subpixel circuit and a portion of a sensor array according to embodiments. FIG. 2c and FIG. 2d are schematic cross-sectional views of a subpixel circuit according to embodiments. FIG. 3a-3c are schematic top cross-sectional views of a transparent subpixel configuration according to embodiments. FIG. 4 is a flowchart of a method for forming a display according to embodiments. FIG. 5a-5e are according to embodiments These are schematic cross-sectional views of a backplane (102) during a method (400) for forming a display having an aperture configuration. FIGS. 6a–6e are schematic cross-sectional views of a backplane during a method for forming a display having an array configuration or a transparent subpixel configuration according to embodiments. For ease of understanding, the same reference numbers have been used to designate the same elements common to the drawings where possible. It is thought that the elements and features of one embodiment may be beneficially incorporated into other embodiments without further mention. Specific details for implementing the invention

[0010] The embodiments described herein generally relate to displays. More specifically, the embodiments described herein relate to subpixel circuits, displays comprising subpixel circuits, and methods for forming subpixel circuits that can be used in displays such as organic light-emitting diode (OLED) displays. Some configurations of the displays described herein include subpixel circuits, an overhang structure, and at least one sensor opening adjacent to an adjacent subpixel circuit. The at least one sensor opening includes a sensor disposed thereunder. Other configurations of the displays described herein include subpixel circuits comprising OLED subpixels and a transparent subpixel with a sensor disposed thereunder. The configurations described herein utilize integrated sensors to increase the transmittance of the display while eliminating the need for bezels and reducing blind spots within the display.

[0011] FIG. 1a is a schematic top cross-sectional view of a display (100) having an aperture configuration (100A). FIG. 2a is a schematic cross-sectional view of a subpixel circuit (101) and a sensor aperture (103) of the aperture configuration (100A). The display (100) of the aperture configuration (100A) includes a plurality of subpixel circuits (101) and at least one sensor aperture (103). The display (100) includes a backplane (102). The backplane (102) includes a plurality of thin-film transistors (TFTs) (105). At least one sensor (107) is positioned below the backplane (102) as shown in FIG. 2a, or within the backplane (102) as shown in FIG. 2c. The sensor (107) is a complementary metal oxide semiconductor (CMOS), a charge coupled device (CCD), a metasurface, a photodiode, a solar cell, an emitter, or a combination thereof. The emitter may be an IR emitter, an LED, or another emitter.

[0012] Anodes (104) may be patterned on a backplane (102) and are defined by adjacent pixel-defining layer (PDL) structures (109) placed on the backplane (102). Some embodiments of the displays (100) of the present disclosure have other structures defining the anodes (104) and the PDL structures (109) are not used. In some embodiments that may be combined with other disclosures described herein, as shown in FIG. 2b, the PDL structures (109) are placed on the backplane (102). The anodes (104) are placed on the backplane (102) between the PDL structures (109). The anodes (104) and the PDL structures (109) have the same height as shown in FIG. 2b. The configuration of the anodes (104) and PDL structures (109) of FIG. 2b is applicable to other embodiments described herein.

[0013] In one embodiment, metal-containing layers are pre-patterned on a backplane (102). For example, the backplane (102) is a pre-patterned indium tin oxide (ITO) glass substrate. The metal-containing layers are configured to operate the anodes (104) of their respective subpixels. The anodes (104) include, but are not limited to, chrome, titanium, gold, silver, copper, aluminum, ITO, combinations thereof, or other suitable conductive materials. The anodes (104) are connected to the TFTs (105) of the backplane (102). In some embodiments that may be combined with other embodiments described herein, the anodes (104) of the OLED subpixel (111) are placed on the TFT (105), for example, on the TFT (105). In other embodiments, as shown in FIG. 2d, the anodes (104) are connected to the TFTs (105) of the backplane (102) via wiring.

[0014] A display (100) having an aperture configuration (100A) includes subpixel circuits (101) separated by an overhang grid (110). Each subpixel circuit (101) has a plurality of OLED subpixels (111). The OLED subpixels (111) are at least a first OLED subpixel (111a), a second OLED subpixel (111b), and a third OLED subpixel (111c). Although the drawings depict the first OLED subpixel (111a), the second OLED subpixel (111b), and the third OLED subpixel (111c), the subpixel circuits (111) of the embodiments described herein may include three or more OLED subpixels (111), such as a fourth and a fifth subpixel. Each OLED subpixel (111) has an OLED material (112) configured to emit light of white, red, green, blue, or other colors when power is supplied. For example, the OLED material (112) of the first OLED subpixel (111a) emits green light when power is supplied, the OLED material of the second OLED subpixel (111b) emits blue light when power is supplied, the OLED material of the third OLED subpixel (111c) emits red light when power is supplied, and the OLED materials of the fourth and fifth subpixels emit light of other colors when power is supplied.

[0015] Each OLED subpixel (111) is surrounded by overhang structures (113) of an overhang grid (110). In embodiments comprising PDL structures (109), the overhang structures (113) are disposed on the upper surface of each of the PDL structures (109). The overhang structures (113) include at least a second structure (113B) disposed over a first structure (113A). Each overhang structure (113) includes an overhang (115). The overhangs (115) are defined by an extension (117) of the second structure (113B) that extends laterally past the side wall of the first structure (113A). The second structure (113B) comprises one of a non-conductive material, an inorganic material, or a metal-containing material. The first structure (113A) comprises one of a non-conductive material, an inorganic material, or a metal-containing material. Non-conductive materials include, but are not limited to, inorganic silicon-containing materials. For example, silicon-containing materials include oxides or nitrides of silicon, or combinations thereof. Metal-containing materials include at least one of a metal or metal alloy such as titanium (Ti), aluminum (Al), aluminum neodymium (AlNd), molybdenum (Mo), molybdenum tungsten (MoW), copper (Cu), or a combination thereof.

[0016] The inorganic materials of the first structure (113A) and the second structure (113B) include silicon nitride (Si3N4), silicon oxide (SiO2), silicon oxynitride (Si2N2O), or a combination thereof. The overhang structures (110) may remain in place, that is, permanently. In one embodiment that may be combined with other embodiments described herein, the first structure (113A) includes an inorganic material such as silicon, e.g., amorphous silicon, and the second structure (113B) includes germanium, copper, chromium, gallium arsenide (GaAs), a group III element, a group IV element, a group III-V compound semiconductor, or a combination thereof. In other embodiments that may be combined with other embodiments described herein, the first structure (113A) comprises germanium, copper, chromium, gallium arsenide (GaAs), a group III element, a group IV element, a group III-V compound semiconductor, or a combination thereof, and the second structure (113B) comprises an inorganic material such as silicon, for example, amorphous silicon. Thus, organic material of the lift-off overhang structure that interferes with OLED performance will not be left behind. Eliminating the need for a lift-off procedure also increases throughput.

[0017] As illustrated in FIGS. 2a-2d, each OLED subpixel (111) includes a cathode (114) disposed over an OLED material (112). The cathode (114) includes a conductive material such as metal. The cathode (114) may be formed of chrome, titanium, aluminum, indium tin oxide (ITO), APT, a compound, or other suitable conductive material. A local passivation layer (116) is disposed over at least a portion of the OLED material (112), the cathode (114), and the overhang structures (113).

[0018] The aperture configuration (100A) includes subpixel circuits (101) surrounding the sensor aperture (103). The subpixel circuits (101) surrounding the sensor aperture (103) are separated from the sensor aperture (103) by an overhang grid (110). As shown in FIG. 2a, an overhang structure (113C) separates one of the OLED subpixels (111), for example, a third OLED subpixel (111c), from the sensor aperture (103). The sensor aperture (103) is surrounded by an overhang structure (113A). The sensor aperture (103) has a sensor (107) placed within or below the backplane (102). A global passivation layer (120) is placed over the subpixel circuits (101) and the sensor aperture (103). An intermediate layer (118) is disposed between the overhang grid (110), the local passivation layer (116), and the partial backplane (102) of the sensor opening (103). In some embodiments that may be combined with other embodiments described herein, for example in FIG. 2a, an auxiliary layer (119) is disposed between the local passivation layer (116) and the intermediate layer (118) within the OLED subpixels (111). In embodiments, the auxiliary layer (119) is disposed between the backplane (102) and the intermediate layer (118) (as shown in FIG. 2a), or between the PDL material (109A) and the intermediate layer (118) (in the embodiments of FIG. 2d). In other embodiments that may be combined with other embodiments described herein, for example in FIG. 2d, the PDL material (109A) is disposed between the intermediate layer (118) and the backplane (102) within the sensor opening (103). The PDL material (109A) is transparent or translucent. The passivation layer (120) and the intermediate layer (118) are transparent or translucent. Thus, light is emitted (if the sensor (107) is an emitter) or received by the sensor (107).

[0019] FIG. 1b is a schematic top cross-sectional view of a display (100) having an array configuration (100B). FIG. 2b is a schematic cross-sectional view of a portion of a subpixel circuit (101) and a sensor array (121) of the array configuration (100B). The display (100) of the array configuration (100B) includes a plurality of subpixel circuits (101) and a plurality of sensor arrays (121). The sensor opening includes a plurality of sensor arrays (121). The external sensor arrays among the plurality of sensor arrays (121) are adjacent to the subpixel circuits (101). At least one sensor (107) is disposed below the plurality of sensor arrays (121). The sensor (107) is disposed inside or below the backplane (102).

[0020] A display (100) having an array configuration (100B) includes subpixel circuits (101) separated by an overhang grid (110). External sensor arrays adjacent to the subpixel circuits (101) are separated from the subpixel circuits (101) by the overhang grid (110). Each subpixel circuit (101) has a plurality of OLED subpixels (111). Each OLED subpixel (111) is surrounded by overhang structures (113) of the overhang grid (110). Each OLED subpixel (111) has an OLED material (112) configured to emit light of white, red, green, blue, or other colors when power is supplied. Each sensor array (121) has a plurality of subpixel openings (123). Each subpixel opening (123) is surrounded by overhang structures (113) of the overhang grid (110). As illustrated in FIG. 2b, an overhang structure (113C) separates one of the OLED subpixels (111), for example, a third OLED subpixel (111c), from an external sensor array. Each subpixel opening (123) has a portion of a sensor (107) placed underneath, either within or below the backplane (102). A global passivation layer (120) is placed over the subpixel circuits (101) and the plurality of sensor arrays (121). An intermediate layer (118) is placed between the overhang grid (110), the local passivation layer (116), and the portion of the backplane (102) of the subpixel openings (123). In some embodiments that may be combined with other embodiments described herein, for example in FIG. 2d, a PDL material (109A) is placed between the intermediate layer (118) and the backplane (102) at the subpixel opening (123). The PDL material (109A) is transparent or translucent. The passivation layer (120) and the intermediate layer (118) are transparent or translucent. Thus, light is emitted (if the sensor (107) is an emitter) or received by the sensor (107).

[0021] FIGS. 1c and FIGS. 1d are schematic top cross-sectional views of a display (100) having a transparent subpixel configuration (124). FIGS. 2c and FIGS. 2d are schematic cross-sectional views of a subpixel circuit (101).

[0022] A display (100) of a transparent subpixel configuration (124) comprises a plurality of subpixel circuits (101) separated by an overhang grid (110). Each subpixel circuit (101) has a plurality of OLED subpixels (111). In some embodiments of the display (100) that may be combined with other embodiments described herein, as illustrated in FIG. 1c, the transparent subpixel configuration (124) comprises a portion (123A) of the subpixel circuits (101) comprising OLED subpixels (111) and a transparent subpixel (125). The portion (123) of the subpixel circuits (101) comprises at least one sensor (107) disposed thereunder. The sensor (107) is disposed inside or below the backplane (102). The transparent subpixels (125) of the subpixels (101) of part (123A) are transparent, and thereby light is emitted (if the sensor (107) is an emitter) or received by the sensor (107) through the transparent subpixels (125). In the embodiments of FIG. 1d which may be combined with other embodiments described herein, one or more sensors (107) are placed inside or below the backplane (102) of the display area (123B) of the display (100). The display area (123B) may be the entire visible area of ​​the display (100). In other embodiments of the display (100) having the transparent subpixel configuration (124) of FIG. 1d, one or more sensors (107) are not placed inside or below the backplane (102). In embodiments without one or more sensors, the transparent subpixels (125) have increased transmittance. The transparent subpixels (125) of the subpixels (101) are transparent, and thereby light is emitted (if the sensor (107) is an emitter) or received by one or more sensors (107) through the display area (123B) of the display (100).

[0023] Subpixel circuits (101) are separated by an overhang grid (110). Each OLED subpixel (111) and transparent subpixel (125) is surrounded by overhang structures (113) of the overhang grid (110). Each OLED subpixel (111) and transparent subpixel (125) is surrounded by overhang structures (113) of the overhang grid (110). In embodiments comprising PDL structures (109), the overhang structures (113) are placed on the upper surface of each of the PDL structures (109). The overhang structures (113) include at least a second structure (113B) placed over a first structure (113A). Each overhang structure (113) includes an overhang (115). The overhang (115) is defined by an extension (117) of the second structure (113B) that extends laterally past the side wall of the first structure (113A). Each OLED subpixel (111) includes a cathode (114) placed over the OLED material (112). A local passivation layer (116) is placed over at least a portion of the OLED material (112), cathode (114), and overhang structures (113) of each OLED subpixel (111). A transparent subpixel (125) has a portion of each sensor (107) or a plurality of sensors (107) placed underneath, either inside (Fig. 2c) or below (Fig. 2d) the backplane (102). A global passivation layer (120) is placed over the subpixel circuits (101) and the sensor opening (103). An intermediate layer (118) is positioned between the overhang grid (110), the local passivation layer (116), and the partial backplane (102) of the sensor opening (103). In some embodiments that may be combined with other embodiments described herein, for example in FIG. 2d, a PDL material (109A) is positioned between the intermediate layer (118) and the backplane (102) within a transparent subpixel (125). The PDL material (109A) is transparent or translucent. The passivation layer (120) and the intermediate layer (118) are transparent or translucent.

[0024] FIGS. 3a–3c are schematic top cross-sectional views of a transparent subpixel configuration (124) of a display (100). As shown in FIG. 3a, each subpixel circuit (101) has a transparent subpixel (125) located above or below OLED subpixels (111). The transparent subpixel (125) has a width (301) equal to the width (302) of all adjacent OLED subpixels (111). As shown in FIGS. 3b and 3c, a first subpixel circuit (303) has a first transparent subpixel (125A) located below the OLED subpixels (111). A second subpixel circuit (305) located below the first subpixel circuit (303) has a second transparent subpixel (125B) located above the OLED subpixels (111). The first transparent subpixel (125A) and the second transparent subpixel (125B) are directly adjacent without an overhang structure (113) between them to increase transmittance. In some embodiments, at least one sensor (107) is placed below the transparent subpixels (125). In other embodiments, the sensor (107) is not placed below the transparent subpixels (125). As shown in FIG. 3b, the third transparent subpixel (125C) of the third subpixel circuit (307) is adjacent to the first transparent subpixel (125A) of the first subpixel circuit (303) with an overhang structure (113) between them, and the fourth transparent subpixel (125D) of the fourth subpixel circuit (309) is adjacent to the second transparent subpixel (125B) of the second subpixel circuit (305) with an overhang structure (113) between them. As illustrated in FIG. 3c, the third transparent subpixel (125C) of the third subpixel circuit (307) is directly adjacent to the first transparent subpixel (125A) of the first subpixel circuit (303) without an overhang structure (113) between them, and the fourth transparent subpixel (125D) of the fourth subpixel circuit (309) is adjacent to the second transparent subpixel (125B) of the second subpixel circuit (305) without an overhang structure (113) between them, thereby increasing the transmittance.

[0025] FIG. 4 is a flowchart of a method (400) for forming a display (100). FIG. 5a-5e are schematic cross-sectional views of a backplane (102) during a method (400) for forming a display (100) having an aperture configuration (100A). FIG. 6a-6e are schematic cross-sectional views of a backplane (102) during a method (400) for forming a display (100) having an array configuration (100B) or a transparent subpixel configuration (124).

[0026] As illustrated in FIGS. 5A and 6A, in operation (401), an overhang grid (110) is formed. An overhang grid (110) of embodiments of the display (100) is described herein. As illustrated in FIGS. 5B and 6B, in operation (402), an OLED material (112), a cathode (114), and a local passivation layer (116) are deposited. As illustrated in FIGS. 5C and 6C, in operation (403), a resist (502) is formed within the subpixel (111). As illustrated in FIGS. 5D and 6D, in operation (404), the local passivation layer (116) is removed. As illustrated in FIGS. 5E and 6E, in operation (405), the cathode (114) and the OLED material (112) exposed by the resist (502) are removed. As illustrated in FIGS. 2a-2d, in operation (406), the resist (502) is removed.

[0027] In summary, the displays described herein include subpixel circuits, an overhang structure, and at least one sensor opening adjacent to an adjacent subpixel circuit. The at least one sensor opening includes a sensor disposed thereunder. Other configurations of the displays described herein include subpixel circuits comprising OLED subpixels and a transparent subpixel with a sensor disposed thereunder. The configurations described herein utilize integrated sensors to increase the transmittance of the display while eliminating the need for bezels and reducing blind spots within the display.

[0028] Although the foregoing description relates to embodiments of the present disclosure, other and additional embodiments of the present disclosure may be made without departing from the basic scope thereof, the scope thereof is determined by the following claims.

Claims

Claim 1 A display comprising: a backplane; a plurality of subpixel circuits separated by an overhang grid disposed on the backplane, wherein each subpixel circuit has subpixels surrounded by overhang structures of the overhang grid, and each subpixel has: an anode connected to a thin-film transistor (TFT) of the backplane, and an organic light-emitting diode (OLED) material disposed on the anode; and a sensor opening, wherein the subpixel circuits surround the sensor opening and are separated from the sensor opening by the overhang grid; wherein the sensor opening is surrounded by its respective overhang structure; and wherein the sensor is disposed within or below the backplane, or below the sensor opening. Claim 2 A display according to claim 1, wherein an intermediate layer is disposed on the backplane within the sensor opening. Claim 3 In claim 1, the overhang grid comprises a plurality of overhang structures, a display. Claim 4 In paragraph 3, each overhang structure is defined by an extension of a second structure extending laterally past a first structure, a display. Claim 5 In claim 1, the sensor is a display, which is a complementary metal oxide semiconductor (CMOS), a charge coupled device (CCD), a metasurface, a photodiode, or a solar cell. Claim 6 In paragraph 1, the sensor is a display that is an emitter. Claim 7 In paragraph 6, the display, wherein the emitter is an IR emitter or a light-emitting diode (LED). Claim 8 A display according to claim 1, wherein a layer of pixel defining layer material is disposed on the backplane within the sensor opening. Claim 9 In claim 1, the anode is a display disposed on the TFT. Claim 10 A display according to claim 1, wherein the anode is connected to the TFT through wiring. Claim 11 A display comprising: a backplane; a plurality of subpixel circuits separated by an overhang grid disposed over the backplane, wherein each subpixel circuit has subpixels surrounded by overhang structures of the overhang grid, and each subpixel has: an anode connected to a thin-film transistor (TFT) of the backplane, and an organic light-emitting diode (OLED) material disposed over the anode; a plurality of sensor arrays, wherein external sensor arrays of the plurality of sensor arrays are adjacent to the subpixel circuits and separated from the subpixel circuits by the overhang grid, and each sensor array has subpixel openings surrounded by overhang structures of the overhang grid; and a sensor disposed below the plurality of sensor arrays, either within or below the backplane. Claim 12 In claim 11, the overhang grid comprises a plurality of overhang structures, a display. Claim 13 In paragraph 12, each overhang structure is defined by an extension of a second structure extending laterally past a first structure, a display. Claim 14 In paragraph 11, the sensor is a display, which is a complementary metal oxide semiconductor (CMOS), a charge coupled device (CCD), a metasurface, a photodiode, or a solar cell. Claim 15 In Clause 11, the sensor is a display that is an emitter. Claim 16 In paragraph 15, the above-mentioned emitter is an IR emitter or a light-emitting diode (LED), a display. Claim 17 In Clause 11, the anode is a display disposed on the TFT. Claim 18 In paragraph 11, the display, wherein the anode is connected to the TFT through wiring. Claim 19 A subpixel circuit comprising: a backplane; and an overhang grid disposed on the backplane, wherein the overhang grid defines an organic light-emitting diode (OLED) subpixel and a transparent subpixel, each of which is surrounded by overhang structures of the overhang grid, wherein the OLED subpixel has: an anode connected to a thin-film transistor (TFT) of the backplane, and an OLED material disposed on the anode, and the transparent subpixel has: a sensor disposed within or below the backplane. Claim 20 In claim 19, the overhang grid is a subpixel circuit comprising a plurality of overhang structures. Claim 21 In paragraph 20, each overhang structure is a subpixel circuit defined by an extension of a second structure extending laterally past a first structure. Claim 22 In paragraph 21, the sensor is a subpixel circuit that is a complementary metal oxide semiconductor (CMOS), a charge coupling device (CCD), a metasurface, a photodiode, or a solar cell. Claim 23 In paragraph 19, the sensor is a subpixel circuit that is an emitter. Claim 24 In paragraph 23, the above emitter is an IR emitter or a light-emitting diode (LED), a subpixel circuit. Claim 25 In claim 19, the anode is disposed on the TFT, or the anode is connected to the TFT through wiring, a subpixel circuit. Claim 26 delete Claim 27 A method comprising the steps of: depositing an organic light-emitting diode (OLED) material on a backplane—wherein an overhang grid defines a subpixel region and a transparent region—; placing a cathode on the OLED material over the subpixel region and the transparent region; depositing an encapsulation layer on the backplane; forming a resist layer within the subpixel region of the backplane; removing one or more exposed portions of the encapsulation layer; removing one or more exposed portions of the OLED material; and removing the resist layer. Claim 28 In paragraph 27, a method in which the anode is connected to a thin-film transistor (TFT) of the backplane. Claim 29 In claim 27, the transparent area has a sensor positioned below it within or below the backplane. Claim 30 A device comprising a backplane and a plurality of overhang structures, wherein adjacent overhang structures among the plurality of overhang structures define at least one subpixel and at least one transparent region, and the device is manufactured by a process comprising a method according to any one of claims 27 to 29.

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