Integrated shadow frame support having a flow controller

Abstract

Embodiments of the present disclosure relate to a shadow frame support having one or more flow controllers, and a method for controlling the flow rate of gases passing through the shadow frame support. The shadow frame support comprises a body coupled to the walls of a chamber such that the uppermost surface of the shadow frame support is positioned horizontally within the chamber. The body has a plurality of channels positioned through the body. Each channel includes a flow controller. The flow controller can be adjusted in real time to change the opening ratio of the flow controller.

Description

Technology Field

[0001] The embodiments of the present disclosure generally relate to process chambers and cleaning methods. More specifically, the embodiments described herein provide a shadow frame support having one or more flow controllers, and a method for controlling the flow rate of gases passing through the shadow frame support. Background Technology

[0002] Substrate processing chambers provide a wide variety of functions. Often, when depositing dielectric layers on a substrate, residues from the deposition process accumulate on the walls and other surfaces of the process chambers. These deposits can become brittle and contaminate the surface of the substrate.

[0003] Currently, mechanisms for removing silicon or carbon-containing deposits from chamber surfaces include remote plasma cleaning, in situ RF plasma cleaning, or RF-assisted remote plasma cleaning. To clean chamber surfaces, remote plasma using a cleaning gas may be used. For example, the cleaning gas may be remotely ignited into the plasma, and radicals from the plasma are introduced into the chamber to etch the film deposited on the chamber surfaces. The cleaning gas flows through a shadow frame support placed in the chamber, which can cause non-uniform cleaning in the chamber. Accordingly, an improved shadow frame support is required in the art.

[0004] In one embodiment, a shadow frame support is provided. The shadow frame support comprises a body having an internal opening. The shadow frame support further comprises a plurality of channels disposed through the body and a flow controller disposed in each of the plurality of channels. The flow controller comprises an adjustment actuator that communicates with an adjustment actuator. The adjustment actuator is operable to adjust each of the adjustment actuators in each of the plurality of channels to adjust the opening ratio of each of the flow controllers.

[0005] In another embodiment, a process chamber is provided. The process chamber comprises a chamber body having an interior defined by a plurality of walls. The process chamber further comprises a substrate support disposed in the chamber body, and a diffuser disposed on the substrate support within the chamber body. The process chamber further comprises a shadow frame support disposed inside the chamber body. The shadow frame support comprises a body. Each outer surface of the body is coupled to the inner surface of the plurality of walls. The shadow frame support further comprises a plurality of channels disposed through the body and a flow controller disposed in each of the plurality of channels.

[0006] In another embodiment, a cleaning method is provided. The cleaning method includes the step of raising a substrate support to a cleaning position within a process chamber so as to contact a shadow frame. The shadow frame is disposed on a shadow frame support within the process chamber and includes a plurality of channels disposed through the shadow frame. Each of the plurality of channels includes a flow controller. The method further includes the step of flowing a cleaning gas within the process chamber. The cleaning gas flows through the plurality of channels within the shadow frame support. The method further includes the step of adjusting the opening ratio of each flow controller within the plurality of channels. Brief explanation of the drawing

[0007] In a manner that the features listed above of the present disclosure can be understood in detail, a more specific description of the present disclosure, which has been briefly summarized above, may be made with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the accompanying drawings are merely illustrative of typical embodiments of the present disclosure and should not be construed as limiting the scope of the present disclosure, as the present disclosure may allow for other equally valid embodiments.

[0008] FIG. 1 is a cross-sectional view of a chamber according to embodiments described herein.

[0009] FIG. 2a is a schematic perspective view of a shadow frame support according to embodiments described in this specification.

[0010] FIG. 2b is a schematic plan view of a shadow frame support according to embodiments described in this specification.

[0011] FIG. 2c is a schematic cross-sectional view of a shadow frame support coupled to the wall of a chamber according to embodiments described herein.

[0012] FIGS. 3a and 3b are schematic cross-sectional views of a first configuration of a flow controller according to embodiments described herein.

[0013] FIGS. 4a and 4b are schematic cross-sectional views of a second configuration of a flow controller according to embodiments described herein.

[0014] FIG. 5a is a schematic cross-sectional view of a third configuration of a flow controller according to the embodiments described in this specification.

[0015] FIGS. 5b - 5d illustrate schematic plan views of a flow blocker according to embodiments described herein.

[0016] FIG. 6a is a schematic side view of a substrate support in a processing position according to embodiments described in this specification.

[0017] FIG. 6b is a schematic side view of a substrate support in a cleaning position according to embodiments described in this specification.

[0018] FIG. 7 is a flowchart of a method for cleaning a chamber according to embodiments described in this specification.

[0019] For ease of understanding, the same reference numerals have been used where possible to refer to the same elements common to the drawings. It is expected that the elements disclosed in one embodiment may be advantageously utilized in other embodiments without specific reference. Specific details for implementing the invention

[0020] The embodiments of the present disclosure generally relate to process chambers and cleaning methods. More specifically, the embodiments described herein provide a shadow frame support having one or more flow controllers, and a method for controlling the flow rate of gases passing through the shadow frame support.

[0021] In one embodiment, a process chamber is provided. The process chamber comprises a chamber body having an interior defined by a plurality of walls. The process chamber further comprises a substrate support disposed in the chamber body, and a diffuser disposed on the substrate support within the chamber body. The process chamber further comprises a shadow frame support disposed inside the chamber body. The shadow frame support comprises a body. Each outer surface of the body is coupled to the inner surface of the plurality of walls. The shadow frame support further comprises a plurality of channels disposed through the body and a flow controller disposed in each of the plurality of channels. Each flow controller is coupled to a control actuator disposed through the plurality of walls and the shadow frame support. The process chamber may further comprise a controller that communicates with the control actuator of each flow controller.

[0022] In another embodiment, a cleaning method is provided. The cleaning method includes the step of raising a substrate support to a cleaning position within a process chamber so as to contact a shadow frame. The shadow frame is disposed on a shadow frame support within the process chamber and includes a plurality of channels disposed through the shadow frame. Each of the plurality of channels includes a flow controller. The method further includes the step of flowing a cleaning gas within the process chamber. The cleaning gas flows through the plurality of channels within the shadow frame support. The method further includes the step of adjusting the opening ratio of each flow controller within the plurality of channels.

[0023] FIG. 1 is a cross-sectional view of a chamber (100). It should be understood that the chamber (100) described below is an exemplary chamber, and that other process chambers may be used with or modified to include a shadow frame support according to embodiments of the present disclosure.

[0024] The chamber (100) generally comprises walls (102), a bottom (104), a diffuser (110), and a substrate support (130). The walls (102), the bottom (104), the diffuser (110), and the substrate support (130) define a process volume (106). The process volume (106) is accessed through an opening (108), such as a slit valve. The opening (108) is positioned through the walls (102) of the chamber (100) so that a substrate (140) can be transported in and out of the chamber (100). The chamber body (103) comprises the interior of the chamber (100), defined by the walls (102), the bottom (104), and a backing plate (112). The substrate support (130) includes a substrate receiving surface (132) for supporting the substrate (140). A stem (134) is coupled to a lift system (136) to raise and lower a substrate support (130). A vacuum pump (109) is coupled to a chamber (100) to control the process volume (106) to a desired pressure. For example, the process volume (106) is maintained at a vacuum pressure.

[0025] The chamber (100) includes a diffuser (110). In one example, the diffuser (110) is coupled to the backing plate (112) at the periphery of the backing plate (112) by a suspension (114). In other examples that may be combined with other embodiments described herein, the diffuser (110) may also be coupled to the backing plate (112) by one or more coupling supports. A gas manifold (116) is coupled to the backing plate (112). The gas manifold (116) is operable to enable the introduction of gases into the process volume (106). A gas source (120) is coupled to a gas manifold (116) to provide a gas, such as a processing gas, to a substrate receiving surface (132) through a gas outlet (142) of a backing plate (112) and through gas passages (126) of a diffuser (110). The gas source (120) may supply one or more of a processing gas or a cleaning gas. Examples of processing gases include (but are not limited to) silane (SiH4), ammonia (NH3), nitrous oxide (N2O), nitrogen gas (N3), hydrogen gas (H2), argon gas (Ar2), phosphine (PH3), diborane (B2H6), and combinations thereof. Examples of cleaning gases include (but are not limited to) nitrogen fluoride (NF3), fluorine (F2), sulfur fluoride (SF6), carbon fluoride (C2F6), hydrochloric acid (HCl), and combinations thereof.

[0026] An RF power source (122) is coupled to a diffuser (110) to provide RF power to the diffuser (110). The RF power generates an electric field between the diffuser (110) and the substrate support (130) so that plasma can be generated from gases between the diffuser (110) and the substrate support (130). Various frequencies, such as about 0.3 MHz to about 200 MHz, may be used. In one embodiment, the RF power source (122) is provided at a frequency of 13.56 MHz.

[0027] A remote plasma source (124), such as an inductively coupled remote plasma source, may also be coupled to the gas manifold (116). The remote plasma source (124) may be positioned between the gas source (120) and the gas manifold (116). While processing substrates with the processing gas, a cleaning gas from the gas source (120) may be supplied to the remote plasma source (124), thereby generating a remote plasma and supplying it to the chamber (100) to clean the chamber components. The cleaning gas may be further excited by an RF power source (122) coupled to the remote plasma source (124).

[0028] During processing, a shadow frame (118) may be placed over the periphery of the substrate (140). The chamber (100) further includes a shadow frame support (128). The shadow frame support (128) is coupled to the walls (102) of the chamber (100) and placed in the chamber body (103). When the substrate (140) is initially inserted into the chamber, the shadow frame (118) may be placed on the upper surface (129) of the shadow frame support (128). When the shadow frame (118) is placed on the shadow frame support (128), the upper surface (119) of the shadow frame (118) is parallel to the upper surface (129) of the shadow frame support (128). As illustrated in FIG. 1, when the substrate support (130) rises to the processing position, the shadow frame (118) can be raised from the shadow frame support (128) by the substrate (140) and the substrate support (130). When the processing of the substrate (140) is completed, the substrate support (130) is lowered, and the substrate (140) is removed from the chamber (100). The shadow frame support (128) includes an internal opening (105). The substrate receiving surface (132) is operable to pass through the internal opening (105) to lift the shadow frame (118) to the processing position.

[0029] During the cleaning process, the shadow frame (118) may be placed on the shadow frame support (128), and the substrate receiving surface (132) is raised to a level where the substrate receiving surface (132) contacts the shadow frame (118) without lifting the shadow frame (118) from the shadow frame support (128), as shown in FIG. 6B.

[0030] In one embodiment that can be combined with other embodiments described herein, the shadow frame support (128) may comprise the same material as the chamber (100). In another embodiment that can be combined with other embodiments described herein, the shadow frame support (128) comprises dielectric material, stainless steel material, and aluminum material (but is not limited thereto). The shadow frame (118) can reduce deposition at the edges of the substrate (140) and on regions of the substrate support (130) that are not covered by the substrate (140). The shadow frame (118) can also operate to protect the substrate support (130) from arcing by preventing the substrate support (130) from being exposed to high-density plasma. The shadow frame (118) can also prevent exclusion zones along the edges of the substrate (140) from being contacted and damaged. The shadow frame (118) prevents deposition on the sidewalls of the substrate (140) to avoid strong plasma generation on the sidewalls. Additionally, since the shadow frame (118) reduces heat loss from the substrate support (130), temperature uniformity can be maintained.

[0031] As illustrated in FIG. 1, the shadow frame (118) comprises a plurality of segments (121) joined together. The segments (121) are individual faces of the shadow frame (118). For example, the segments (121) are individual faces of a quadrilateral. The shadow frame (118) may include a plurality of pins (146) disposed in the shadow frame (118) to join the segments (121) of the shadow frame (118) together. For example, as illustrated in FIG. 1, the plurality of pins (146) join adjacent segments (121) of the shadow frame (118) together. A pumping gap (138) is formed between the walls (102) of the chamber (100) and the shadow frame (118) to allow cleaning gases and / or other processing gases to pass through. When gas flows through the pumping gap (138), gas flow rate and pressure control can be achieved by adjusting the flow rate through the pumping gap (138).

[0032] During operation, a cleaning gas is remotely ignited into a plasma, and radicals from the plasma are introduced into the chamber through a diffuser (110) to etch a film deposited on the surfaces of the substrate support (130), shadow frame (118), and walls (102). A vacuum pump (109) draws the radicals toward the bottom of the chamber (100). The radicals reach the substrate support (130) and are directed toward the chamber walls, because the radicals cannot pass through the solid substrate support (130). The vacuum pump (109) is positioned in the lower section (144) of the chamber body (103). The lower section (144) is located below the substrate support (130). The vacuum pump (109) draws the radicals into the lower section (144) below the substrate support (130) through a pumping gap (138). The shadow frame support (128) is used to direct the cleaning gas toward the corners of the chamber (100) to improve the total cleaning time and cleaning uniformity. Thus, the amount of radicals flowing toward the corners is greater than the amount of radicals flowing toward the sides of the chamber. Since the corners take longer to clean, the increase in radicals flowing toward the corners reduces the total cleaning time.

[0033] The controller (150) communicates with the chamber (100). The controller (150) communicates with the shadow frame support (128), the gas manifold (116), and the flow controllers (212) of the lift system (136) (shown in FIG. 2a and FIG. 2b). The controller (150) is operable to enable the operations of the method (700) described herein. The controller (150) can enable the movement of the substrate support (130) as well as the flow of gases into the process volume (106) through the flow controllers (212).

[0034] FIG. 2a is a schematic perspective view of a shadow frame support (128). FIG. 2b is a schematic top view of a shadow frame support (128). As shown in FIG. 1 and FIG. 2b, the shadow frame support (128) is coupled to the walls (102) of the chamber (100). The shadow frame support (128) is coupled to the walls (102) such that when the substrate support (130) is lowered from the processing position (shown in FIG. 1), the shadow frame (118) is positioned on the shadow frame support (128). The shadow frame support (128) is operable to control the flow rates of gases, namely processing gases and cleaning gases. Control of the flow rates of the gases includes controlling the flow rate of the gas from the process volume (106) (shown in FIG. 1) to the lower zone (144) (shown in FIG. 1). The shadow frame support (128) is operable to control the flow rate of the processing gas or the cleaning gas, or both the processing gas and the cleaning gas. Although the shadow frame support (128) shown in FIG. 2a and FIG. 2b has a rectangular shape, other shapes of the shadow frame support (128) are considered. For example, a circular shadow frame support (128) may be placed in a circular chamber.

[0035] The shadow frame support (128) includes a body (202). As shown in FIG. 2b, the outer surface (204) of the shadow frame support (128) is joined to the walls (102) of the chamber (100). The body (202) is joined to the walls (102) such that the top surface (129) of the shadow frame support (128) is parallel to the substrate receiving surface (132) of the chamber (100) (shown in FIG. 1). Thus, the top surface (119) of the shadow frame (118) (shown in FIG. 1) is parallel to the top surface (129) when placed on the shadow frame support (128). Providing a surface parallel to the substrate receiving surface (132) on which the shadow frame (118) is placed enables increased durability of the shadow frame (118). For example, a plurality of pins (146) disposed within the shadow frame (118) (shown in FIG. 1) will have an increased lifespan because there will be less stress on the pins (146) since the top surface (129) of the shadow frame support (128) is kept substantially parallel to the substrate receiving surface (132). The body (202) includes an internal opening (105) disposed through the body (202). The substrate receiving surface (132) shown in FIG. 1 can pass through the internal opening (105) to lift the shadow frame (118) to a processing position.

[0036] The body (202) has a plurality of channels (208) disposed through the body (202). Each of the plurality of channels (208) includes a channel length (210). In one embodiment that can be combined with other embodiments described herein, the channel length (210) is about 50 mm to about 100 mm. Each of the plurality of channels (208) includes a channel width (211). In one embodiment that can be combined with other embodiments described herein, the channel width (211) is about 50 mm to about 100 mm. The body (202) may have any number of channels (208) disposed through the body (202). For example, each face (205) of the shadow frame support (128) may have three to ten channels disposed through the body (202). In one embodiment that can be combined with other embodiments described herein, as shown in FIG. 2a and FIG. 2b, a plurality of channels (208) are arranged around the entire perimeter of the body (202). In one embodiment that can be combined with other embodiments described herein, the channel length (210) of each channel (208) is the same. In another embodiment, as shown in FIG. 2b, the channel length (210) of some channels (208) may be longer than that of other channels (208). In embodiments where the faces (205) of the shadow frame support (128) are longer than the other faces (205), as in FIG. 2b, the channel length (210) on the longer faces (205) may be increased, or the number of channels (208) on the longer faces (205) may be increased. A plurality of channels (208) are oriented through the body (202) so as to be parallel to the walls (102) of the chamber (100) and / or parallel to the side walls of the body (202).

[0037] The shadow frame support (128) includes flow controllers (212) disposed in a plurality of channels (208) of the shadow frame support (128). Each flow controller (212) is operable to control the amount of cleaning gas that can flow through each of the plurality of channels (208). Each flow controller is coupled to a body (202). In an embodiment that may be combined with other embodiments described herein, the flow controllers (212) are disposed in each channel (208) of the shadow frame support (128). Including a flow controller (212) in each channel (208) enables control of the flow rate of cleaning gas through each channel (208). Each flow controller (212) is operable to allow the channel (208) to have an opening ratio of 0% to 100%. The opening ratio defines the amount of gas that can pass through. For example, an open ratio of 100% corresponds to a completely open channel. An open ratio of 0% corresponds to a completely closed channel.

[0038] The ability to control the flow rate of cleaning gases and / or other processing gases through each channel (208) of the shadow frame support (128) enables the cleaning endpoint of the cleaning process to be achieved more quickly. The user can control the flow rate of gases during the cleaning process in real time before, during, or after the cleaning process. The flow controller (212) can be adjusted by turning the dialing tool (228) (shown in FIG. 2c). Alternatively, the controller (150) can be operated to provide commands to remotely adjust the flow controller (212) to change the opening ratio. The controller (150) communicates with the adjustment actuators (222) (shown in FIG. 2c) of each flow controller (212). Each flow controller (212) is adjusted in real time during the cleaning process. The controller (150) can be operated to adjust each flow controller (212) within each channel (208) independently and simultaneously. When final cleaning reactions occur in the corner sections (214) of the chamber (100), the flow controllers (212) can be adjusted to direct more cleaning gas to the corner sections (214). For example, in the channels (208) placed in the corner sections (214) of the shadow frame support (128), the flow controllers (212) will have a higher opening ratio than in the channels (208) placed in the intermediate section (216) between the corner sections (214).

[0039] Since each flow controller (212) is individually adjustable, each opening ratio in each channel (208) can be refined. For example, because the cleaning time in the intermediate zones (216) is shorter than in the corner zones (214), the flow controllers (212) in the intermediate zones (216) may have an opening ratio of about 5% to 30%. The flow controllers (212) in the corner zones (214) may have an opening ratio of about 30% to 60%. Thus, by adjusting the opening ratios of the flow controllers (212), cleaning uniformity is improved, and the amount of cleaning gas required to reach the cleaning end point is reduced.

[0040] FIG. 2c is a schematic cross-sectional view of a shadow frame support (128) coupled to the wall (102) of a chamber (100). A flow controller (212) is positioned in the channel (208). The outer surface (204) of the body (202) is coupled to the walls (102) of the chamber (100) through a coupler (218). In some embodiments, the coupler (218) may be a threaded bolt.

[0041] In one embodiment that can be combined with other embodiments described herein, a plurality of adjustment openings (220) are disposed through the walls (102) of the chamber (100). Each channel (208) of the shadow frame support (128) may include an adjustment opening (220). An adjustment actuator (222) may be disposed through each adjustment opening (220). The adjustment actuator (222) is coupled to each flow controller (212). The adjustment actuator (222) may be disposed via a coupler (218) so that the flow controller (212) is coupled to the adjustment actuator (222). In some embodiments that may be combined with other embodiments described herein, as illustrated in FIG. 2c, the adjustment actuator (222) may be activated by a dialing tool (228), such as a keyed member or a threaded shaft, to manually rotate the flow blockers (224). The dialing tool (228) enables the adjustment actuator (222) to be controlled so that the flow blockers (224) are adjusted. The dialing tool (228) may be positioned to contact the adjustment actuator (222) so that the adjustment actuator (222) is activated upon rotation of the dialing tool (228).

[0042] In one embodiment that may be combined with other embodiments described herein, as illustrated in FIG. 2c, the flow controller (212) includes flow blockers (224), such as flappers or butterfly valves among other examples. The flow blockers (224) can be operated to be adjusted to change the opening ratio within the channel (208). In some embodiments, the flow blockers (224) are coupled to sliders (226). The sliders (226) are positioned on a control actuator (222). When operated, when the control actuator (222) is activated (e.g., rotated or shifted), the sliders (226) positioned on the control actuator (222) will move along the control actuator (222). When the flow blockers (224) are coupled to the sliders (226), the flow blockers (224) are moved to change the opening ratio within the channel (208). For example, as shown in FIG. 2c, as the sliders (226) move outward, the opening ratio decreases. As the sliders (226) move inward within each channel (208), the opening ratio increases. The flow blockers (224) are coupled to the sliders (226) so that the sliders (226) move along the adjustment actuator (222) to rotate the flow blockers (224) to adjust the opening ratio within the channel (208).

[0043] Since each channel (208) includes a flow controller (212), the opening ratio of each channel (208) of the shadow frame support (128) can be controlled independently. The adjustment opening (220) enables real-time control of the opening ratio without destroying the vacuum pressure within the chamber (100). In some embodiments, the controller (150) communicates with the adjustment actuator (222) of each flow controller (212) and can operate to command the adjustment actuator (222) to adjust the opening ratio of each flow controller (212) by rotating each flow blocker (224) in each of the plurality of channels. The controller (150) can operate to provide commands for remotely adjusting the flow controller (212) to change the opening ratio. The controller (150) can operate to adjust each flow controller (212) in real time. The controller (150) can be operated to adjust each flow controller (212) within each channel (208) independently and simultaneously. In other embodiments, each flow controller (212) may be manually controlled to adjust the opening ratio. For example, the flow controller (212) may be adjusted with a dialing tool (228).

[0044] Real-time adjustment of the opening ratio using the adjustment actuator (222) enables adjustment of the opening ratio in each channel (208) so that the necessary cleaning rates are obtained through each channel (208) without opening the chamber (100). Thus, real-time adjustment improves the uniformity of the cleaning gas within the chamber (100). Additionally, film thickness uniformity is achieved during processing operations due to the ability to control the processing gas flow rate through the shadow frame support (128). For example, the deposition rate of different films is affected by the process gas flow rate. Therefore, if the deposition rate needs to be adjusted, the flow rate can be adjusted by activating the adjustment actuator (222) with the controller (150) or dialing tool (228).

[0045] FIGS. 3A and 3B are schematic cross-sectional views of a first configuration (300) of a flow controller (212). The flow controller (212) is positioned in a channel (208) of a shadow frame support (128). The flow controller (212) includes a flow blocker (224) (e.g., a rotatable plate) operable to block gas flow through the channel (208). An adjustment actuator (222) is coupled to the flow blocker (224). The operation of the adjustment actuator (222) will rotate the flow blocker to adjust the opening ratio. The flow blocker (224) can rotate around a pivot (302). The pivot (302) is a mechanism operable to rotate around a central axis. FIG. 3A illustrates a flow blocker (224) having an opening ratio of 100%. FIG. 3b illustrates a flow blocker (224) having an opening ratio of 0%. The flow controller (212) may have an opening ratio of 0% to 100%.

[0046] FIGS. 4a and 4b are schematic cross-sectional views of a second configuration (400) of a flow controller (212). The second configuration (400) is also illustrated in FIG. 2c. The flow controller (212) is positioned in a channel (208) of a shadow frame support (128). The flow controller (212) includes a flow blocker (224) operable to block gas flow through the channel (208). An adjustment actuator (222) is coupled to the flow blocker (224). The flow blockers (224) are coupled to sliders (226). The sliders (226) are positioned on the adjustment actuator (222). When the adjustment actuator (222) is actuated, the sliders (226) positioned on the adjustment actuator (222) will move along the adjustment actuator (222). When the flow blockers (224) are coupled to the sliders (226), the flow blockers (224) are moved to change the opening ratio within the channel (208). The flow blocker (224) can rotate around a pivot (402). The pivot (402) is a mechanism operable to rotate around a central axis. FIG. 4a illustrates a flow blocker (224) having an opening ratio of about 10%. FIG. 4b illustrates a flow blocker (224) having an opening ratio of 70%. The flow controller (212) can have an opening ratio of 0% to 100%.

[0047] FIG. 5a is a schematic cross-sectional view of a third configuration (500) of a flow controller (212). The flow controller (212) is positioned in a channel (208) of a shadow frame support (128). The flow controller (212) includes a flow blocker (224) operable to block gas flow through the channel (208). The flow blocker (224) is configured to be placed on a ledge (502) in each of the plurality of channels (208). The ledge (502) is coupled to the shadow frame support (128) within the plurality of channels (208).

[0048] FIGS. 5b–5d illustrate schematic plan views of flow blockers (224). Each flow blocker (224) includes one or more apertures (504) positioned through each flow blocker (224). The apertures (504) are configured to allow gas to flow through the apertures (504). The position and size of the apertures (504) can be adjusted to increase or decrease the opening ratio of the flow controller (212). Although one or more apertures (504) are depicted as polygonal shapes, the shape of the apertures is not limited. For example, the apertures (504) may have circular, triangular, or polygonal shapes. FIG. 5b illustrates a flow blocker (224) having an opening ratio of 20%. FIG. 5c illustrates a flow blocker (224) having an opening ratio of 40%. FIG. 5d illustrates a flow blocker (224) having an opening ratio of 60%. The flow controller (212) illustrated in FIG. 5a–5d may have an opening ratio of 0% to 100%. The flow blocker (224) may also include bolt holes (506). The flow blocker (224) may be bolted to a resistor (502) (illustrated in FIG. 5a) by bolts positioned through the bolt holes (506). The flow blocker (224) used in the third configuration (500) of the flow controller (212) includes ceramic materials, aluminum alloys, and anodized aluminum alloys (but is not limited thereto). For example, the flow blocker (224) may include an aluminum alloy such as AL6061.

[0049] Each of the apertures (504) includes an aperture width (508) and an aperture length (510). The aperture width (508) and the aperture length (510) can be adjusted to change the opening ratio of each flow blocker (224). In some embodiments that may be combined with other embodiments described herein, the apertures (504) may be 10 mm × 20 mm, 10 mm × 30 mm, and 10 mm × 50 mm.

[0050] FIG. 6a is a schematic side view of a substrate support (130) in a processing position. During substrate processing, the substrate support (130), with a substrate (not shown in the drawing) placed on top, is raised to a position where the shadow frame (118) is separated from the shadow frame support (128). The shadow frame (118) is lifted by the substrate support (130), and accordingly, the processing gas can flow through the gap (602) formed between the substrate support (130) and the shadow frame support (128) through the pumping gap (138) between the shadow frame (118) and the walls (102). Thus, the processing gas is not forced into the channels (208) of the shadow frame support (128).

[0051] FIG. 6b is a schematic side view of a substrate support (130) in a cleaning position. A shadow frame (118) blocks the gap (602) between the substrate support (130) and the shadow frame support (128). During cleaning, the shadow frame (118) is placed on the top of the shadow frame support (128). The substrate support (130) is shown in a cleaning position such that the shadow frame (118) contacts both the substrate support (130) and the shadow frame support (128). The shadow frame (118) blocks the gap (602) between the substrate support (130) and the shadow frame support (128), allowing cleaning gas to flow into a plurality of channels (208) of the shadow frame support (128). In one embodiment, the shadow frame support (128) blocks the cleaning gas from flowing along the length of the walls (102) and directs the cleaning gas flow to the corner sections (214) (shown in FIG. 2b).

[0052] FIG. 7 is a flowchart of a method (700) for cleaning a chamber (100). For the sake of clarity, this method (700) will be described with reference to the chamber (100) of FIG. 1. However, it should be noted that chambers other than the chamber (100) may be used with this method (700). Each of the first configuration (300), second configuration (400), or third configuration (500) of the flow controller (212) may be used with this method (700). A controller (150) is coupled to the chamber (100). The controller (150) is configured to enable the operations of this method (700).

[0053] In operation (701), the shadow frame (118) is placed on the upper surface (129) of the shadow frame support (128) within the chamber (100). The shadow frame support (128) includes a plurality of channels (208) that are positioned through the shadow frame support (128). Each channel (208) includes a flow controller (212) configured to enable the flow of cleaning gas through each channel (208). In operation (702), the substrate support (130) is raised to a cleaning position (illustrated in FIG. 6b). The cleaning position is such that the shadow frame (118) comes into contact with both the substrate support (130) and the shadow frame support (128).

[0054] In operation (703), cleaning gas radicals are introduced into the process volume (106) of the chamber (100). The cleaning gas may include NF3, F2, SF6, C2F6, HCl, or combinations thereof (but is not limited thereto). In one embodiment, the cleaning gas is remotely ignited into a plasma, and radicals from the plasma are introduced into the chamber to etch a film deposited on the surfaces of the substrate support (130), shadow frame (118), and walls (102) within the process volume (106) of the chamber (100). A vacuum pump (109) draws the radicals toward the bottom of the chamber (100) (e.g., the bottom zone (144)).

[0055] As the cleaning gas moves from the process volume (106) to the lower section (144), the cleaning gas passes through the channels (208) of the shadow frame support (128). A flow controller (212) for each of the multiple channels (208) can be activated to adjust the opening ratio of each channel (208). For example, the flow controllers (212) in the channels (208) of the corner sections (214) (shown in FIG. 2b) may have a higher opening ratio than the flow controllers (212) in the intermediate sections (216) (shown in FIG. 2b). Since the cleaning time required in the corner sections (214) is longer than in the intermediate sections (216), increasing the opening ratio in the corner sections (214) improves cleaning uniformity and reduces the total cleaning time. When the total cleaning time is reduced, the amount of cleaning gas required is also reduced. As a result, production costs are also minimized, which leads to lower substrate processing costs.

[0056] Additionally, each flow controller (212) may be manually controlled to adjust the opening ratio of each channel (208). For example, the flow controller (212) may be controlled by a dialing tool (228) coupled to the flow controller (212) to activate the flow controller (212). In other embodiments, the flow controller (212) may be controlled by a controller (150) coupled to the chamber (100). The controller provides commands to change the opening ratio by remotely controlling the flow controller (212) within each channel (208). The controller may control each flow controller (212) in real time.

[0057] In embodiments utilizing the third configuration (500) of the flow controllers (212), the opening ratio in each channel (208) can be adjusted by switching flow blockers (224) placed on the resistor (502) within the channels (208). For example, a flow blocker (224) having a higher opening ratio can be replaced with a flow blocker (224) having a lower opening ratio, or vice versa.

[0058] In summary, the present specification provides a shadow frame support having one or more flow controllers, and a method for controlling the flow of gases passing through the shadow frame support. The shadow frame support comprises a body coupled to the walls of a chamber such that the top surface of the shadow frame support is positioned horizontally within the chamber. The body has a plurality of channels positioned through the body. Each channel includes a flow controller. The flow controller can be adjusted in real time to change the opening ratio of the flow controller. The opening ratio of each channel can be adjusted without destroying the vacuum pressure within the chamber. Accordingly, new designs of the shadow frame supports are not required, which leads to greater throughput. During chamber cleaning processes, the cleaning gas can be directed as desired through the plurality of channels. Chamber cleaning time can be minimized by directing the cleaning gas toward the corners of the process chamber. Additionally, the shadow frame support improves the durability of the shadow frame when the top surface of the shadow frame and the top surface of the shadow frame support are parallel to each other.

[0059] The embodiments and all functional operations described herein may be implemented in hardware, computer software or firmware, or in digital electronic circuits, or in combinations thereof, comprising the structural means and structural equivalents thereof disclosed herein. The embodiments described herein may be implemented as one or more non-transient computer program products, namely, one or more computer programs tangibly embodied in a machine-readable storage device for execution by a data processing device, such as a programmable processor, a computer, or a plurality of processors or computers, or for controlling the operation thereof.

[0060] The processes and logic flows described in this specification may be performed by one or more programmable processors that execute one or more computer programs to perform functions by operating on input data to generate outputs. The processes and logic flows may also be performed by special-purpose logic circuits, such as field programmable gate arrays (FPGAs) or application-specific integrated circuits (ASICs), and the device may also be implemented thereby.

[0061] The term “data processing device” encompasses all devices, devices, and machines for processing data, including, by example, programmable processors, computers, or multiple processors or computers. A device may include not only hardware but also code that creates an execution environment for the computer program, such as processor firmware, a protocol stack, a database management system, an operating system, or a combination of one or more of these. Processors suitable for executing a computer program include, by example, both general-purpose and special-purpose microprocessors, and any one or more processors of any type of digital computer.

[0062] Computer-readable media suitable for storing computer program instructions and data include, for example, semiconductor memory devices, e.g., EPROM, EEPROM, and flash memory devices; magnetic disks, e.g., internal hard disks or removable disks; magneto-optical disks; and all forms of non-volatile memory, media, and memory devices, including CD-ROM and DVD-ROM disks. The processor and memory may be complemented by or included in special-purpose logic circuits.

[0063] The terms "constituting," "including," and "having" are intended to be comprehensive and imply that additional elements other than those listed may exist.

[0064] Although the foregoing describes embodiments of the present disclosure, other embodiments and additional embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure is determined by the following claims.

Claims

Claim 1 A shadow frame support comprising: a body having corners and an internal opening; a plurality of first channels disposed through the corners of the body in corner sections of the body; a plurality of second channels disposed through the body in intermediate sections of the body between the corner sections; and a flow controller disposed in each of the plurality of first channels and the plurality of second channels, wherein the flow controller comprises a flow blocker communicating with an adjustment actuator, and the adjustment actuator is operable to adjust each flow blocker in each of the plurality of first channels and the plurality of second channels to adjust the opening ratio of each flow controller. Claim 2 In claim 1, a shadow frame support in which the controller communicates with the adjustment actuator of each flow controller. Claim 3 In claim 2, the controller is operable to command the adjusting actuator to adjust the opening ratio of each flow controller by rotating each flow blocker within each of the plurality of first channels and each of the plurality of second channels. Claim 4 In claim 1, the dialing tool coupled to the adjustment actuator of each flow controller is a shadow frame support capable of rotating each flow blocker within each of the plurality of first channels and the plurality of second channels to adjust the opening ratio of each flow controller. Claim 5 In claim 1, the plurality of first channels and the plurality of second channels are arranged around the perimeter of the body of the shadow frame support. Claim 6 A process chamber comprising: a chamber body having an interior defined by a plurality of walls; a substrate support disposed in the chamber body; a diffuser disposed on the substrate support within the chamber body; and a shadow frame support disposed within the chamber body, wherein the shadow frame support comprises: a body having corners ― each outer surface of the body is coupled to the inner surface of the plurality of walls ―; a plurality of first channels disposed through the corners of the body in corner sections of the body; a plurality of second channels disposed through the body in intermediate sections of the body between the corner sections; and a flow controller disposed in each of the plurality of first channels and the plurality of second channels. Claim 7 In claim 6, the flow controller comprises a flow blocker, the flow blocker is a plate, and the plate comprises a plurality of apertures penetrating the plate, the process chamber. Claim 8 In claim 7, the plate is disposed on a ledge, and the ledge is coupled to the shadow frame support at each of the plurality of first channels and the plurality of second channels, a process chamber. Claim 9 In claim 6, the flow controller includes a flow blocker, and the controller communicating with the adjustment actuator of each flow controller is operable to command the adjustment actuator to adjust the opening ratio of each flow controller by rotating each flow blocker within each of the plurality of first channels and each of the plurality of second channels, the process chamber. Claim 10 In claim 6, the uppermost surface of the shadow frame support is parallel to the substrate receiving surface of the substrate support, in a process chamber. Claim 11 In claim 6, each intermediate section of the shadow frame support comprises three to ten channels among the plurality of second channels, forming a process chamber. Claim 12 In claim 6, the dialing tool coupled to the adjusting actuator of each flow controller is operable to rotate each flow blocker within each of the plurality of first channels and the plurality of second channels to adjust the opening ratio of each flow controller, the process chamber. Claim 13 A cleaning method comprising the steps of: raising a substrate support to a cleaning position within a process chamber to contact a shadow frame—the shadow frame being disposed on the shadow frame support according to claim 1 within the process chamber—; flowing a cleaning gas within the process chamber—the cleaning gas flowing through a plurality of first channels and a plurality of second channels within the shadow frame support—; and adjusting the opening ratio of each flow controller within the plurality of first channels and a plurality of second channels of the shadow frame support. Claim 14 In claim 13, a cleaning method in which the opening ratio of each channel of the shadow frame support is independently controlled. Claim 15 A cleaning method according to claim 13, wherein the step of adjusting the opening ratio of each flow controller is performed with a dialing tool coupled to an adjustment actuator of each of the plurality of first channels and the plurality of second channels. Claim 16 In claim 13, the step of adjusting the opening ratio of each flow controller is performed remotely by a controller communicating with each flow controller, in a cleaning method. Claim 17 A cleaning method according to claim 13, wherein the step of adjusting the opening ratio of each flow controller is performed in real time. Claim 18 A cleaning method according to claim 13, wherein the cleaning gas is nitrogen fluoride (NF3), fluorine (F2), sulfur fluoride (SF6), carbon fluoride (C2F6), hydrochloric acid (HCl), or a combination thereof. Claim 19 In claim 13, the opening ratio of the flow controller in the corner section of the shadow frame support is higher than in the middle section of the shadow frame support, a cleaning method. Claim 20 In claim 13, the cleaning method wherein the process chamber is maintained under vacuum pressure.

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